Processing device and processing method

Abstract

A treatment device capable of smoothly removing or detoxifying effluents resulting from semiconductor manufacturing is provided. The PFAS detoxification system (10) is a treatment device that performs treatment on waste liquid discharged from a semiconductor manufacturing device, and comprises a polymer filter (301) that classifies the waste liquid into a polymer concentrate having a polymer concentration greater than or equal to a predetermined concentration and a monomer concentrate having a monomer concentration greater than or equal to a predetermined concentration and a monomer that does not have a polymer concentration greater than or equal to a predetermined concentration, and a low molecular weight component treatment unit composed of a monomer concentrator (11b), a circulation path (16), filters (39, 40a, 40b), a first filtrate path (17a), a first storage unit (20xa), a second filtrate path (17b), a second storage unit (20xb), a third filtrate path (18), etc. The low molecular weight component treatment unit performs treatment to increase the concentration of PFAS, which is a low molecular weight component, on the monomer concentrate classified by the polymer filter (301).

Description

Technology Field

[0001] The present disclosure relates to a processing apparatus and a processing method. Background Technology

[0002] Patent document 1 describes a wastewater treatment device comprising a treatment device for reducing the content ratio of organic fluorine compounds, an anion exchange unit filled with an anion exchange unit containing an anion exchanger, and a decomposition device for decomposing and treating the regeneration liquid distributed in the anion exchange unit. Prior art literature

[0003] Japanese Patent Publication No. 2010-125352 The problem to be solved

[0004] The present disclosure provides a processing apparatus and a processing method capable of smoothly removing or neutralizing emissions resulting from semiconductor manufacturing. means of solving the problem

[0005] A treatment apparatus according to one aspect of the present disclosure is a treatment apparatus for treating waste liquid discharged from a semiconductor manufacturing apparatus, and comprises a first filter and a low molecular weight component treatment unit. The first filter classifies the waste liquid into a first solution having a high molecular weight component at a concentration greater than a predetermined concentration and a second solution having a low molecular weight component at a concentration greater than a predetermined concentration and not having a high molecular weight component at a predetermined concentration. The low molecular weight component treatment unit performs a treatment to increase the concentration of the low molecular weight component on the second solution classified by the first filter. Effects of the invention

[0006] According to the present disclosure, the removal or neutralization of emissions resulting from semiconductor manufacturing can be smoothly carried out. Brief explanation of the drawing

[0007] FIG. 1 is a schematic diagram of a processing system according to a first embodiment. Figure 2 is a configuration diagram of the PFAS detoxification system shown in Figure 1. Figure 3 is a diagram illustrating the treatment in a monomer concentrator. Figure 4 is a diagram illustrating a detoxification device. Figure 5 is a diagram illustrating the misting treatment in a detoxification device. Figure 6 is a diagram illustrating a circulation filtration mechanism according to a modified example. Figure 7 is a diagram illustrating a circulation filtration mechanism according to a modified example. Figure 8 is a diagram illustrating a circulation filtration mechanism according to a modified example. FIG. 9 is a schematic diagram of a processing system according to a second embodiment. Figure 10 is a configuration diagram of the semiconductor manufacturing apparatus shown in Figure 9. Figure 11 is a diagram illustrating an interface block. Fig. 12 is a diagram illustrating the mounting base. Figure 13 is a diagram illustrating the vacuum system module and the atmospheric system module. Figure 14 is a diagram illustrating each return path. Figure 15 is a diagram illustrating the switching of the exhaust line. Figure 16 is a diagram illustrating an exhaust line according to a modified example. Specific details for implementing the invention

[0008] Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same reference numerals are assigned to elements of the same type or elements having the same function, and redundant descriptions are omitted.

[0009] [First Embodiment]

[0010] FIG. 1 is a schematic diagram of a processing system (1) according to a first embodiment. As shown in FIG. 1, the processing system (1) is equipped with a PFAS detoxification system (10) (processing device) and a semiconductor manufacturing device (100) (substrate processing device). In the processing system (1), the PFAS detoxification system (10) detoxifies the PFAS discharged from the semiconductor manufacturing device (100). In FIG. 1, a schematic diagram of the configuration of the PFAS detoxification system (10) is shown, and the illustration of some configurations (for example, configurations according to the TMAH (tetramethylammonium hydroxide) waste liquid described later) is omitted. PFAS is an organic fluorine compound, a perfluoroalkyl substance and a polyfluoroalkyl compound (PFAS: Per- and PolyFluoroAlkyl Substances).

[0011] PFAS refers to compounds containing at least one -CF2- or -CF3 aliphatic molecule, and also includes organic polymer compounds (polymers) such as Teflon. PFAS are contained in, for example, foam fire extinguishers, plating solutions, aircraft hydraulic fluids, water repellents, floor waxes, etc. Additionally, PFAS are contained in, for example, textiles, medical devices, electronic substrates, automobiles, food packaging materials, stone, flooring, leather, etc. In semiconductor manufacturing processes, for example, non-polymer PFAS are used in photoresists. Furthermore, polymer PFAS are used in fluid-contacting components such as piping, valves, and pumps in semiconductor manufacturing equipment, as well as in anti-reflective films.

[0012] PFAS is stable in nature and is difficult to decompose. For this reason, PFAS is said to be highly harmful because it has a high persistence and tends to accumulate in the body. The PFAS detoxification system (10) according to the present embodiment is a system that prevents PFAS from being discharged to the outside by detoxifying PFAS discharged from a semiconductor manufacturing device (100). The PFAS detoxification system (10) functions as a treatment device that performs treatment on waste liquid discharged from a semiconductor manufacturing device (100).

[0013] As shown in FIG. 1, the PFAS detoxification system (10) is configured to include a concentrator (11), a sulfuric acid treatment tank (12), a cooler (13), and a detoxification device (14). In addition, in this embodiment, the PFAS detoxification system (10) is described as a group of devices including a plurality of devices, but the PFAS detoxification system (10) may be configured as a single device. In addition, the semiconductor manufacturing device (100) is configured to include a lithography device (111), a cleaning device (112), an etching device (113), and a film deposition device (114). Each component of the semiconductor manufacturing device (100) discharges a material containing PFAS in conjunction with the processing performed. In addition, each processing unit constituting the PFAS detoxification system (10) may be installed in the same space (location) or may not be installed in the same space. For example, each processing unit may be installed within a building where a lithography device (111), a cleaning device (112), or an etching device (113) is installed, or it may be installed outside the building or in an adjacent space. Each processing unit may be installed separately within the building and outside the building. Additionally, any unused parts of the concentrator (11), sulfuric acid treatment tank (12), cooler (13), and detoxification device (14) do not need to be installed at all times.

[0014] The lithography apparatus (111) is configured to include a coating and developing apparatus and an exposure apparatus. The exposure apparatus performs an exposure treatment of the resist film. Specifically, energy rays are irradiated onto the portion of the resist film (photosensitive film) to be exposed by a method such as immersion exposure. The coating and developing apparatus performs a treatment to form a resist film on the surface of a substrate before the exposure treatment by the exposure apparatus, and performs a development treatment of the resist film after the exposure treatment. The liquid or gas discharged from such a lithography apparatus (111) contains PFAS. For example, PFAS is contained in resist waste liquid, alkaline waste liquid (positive type developer) resulting from the development treatment, acid waste liquid resulting from resist stripping, organic exhaust, thermal exhaust, solidified sublimation, etc. Additionally, the organic solvent waste liquid resulting from the negative type development process can also be described as a very low concentration resist waste liquid, which contains PFAS, and may be treated in the same way as the resist waste liquid described above in this embodiment. In this embodiment, the PFAS contained in the resist waste liquid and the PFAS contained in the positive type developer are mainly described. Examples of PFAS contained in the resist waste liquid include, for instance, photoacid generators (PAGs), surfactants, or polymers modified with F. The resist waste liquid discharged from the lithography device (111) is introduced into the PFAS detoxification system (10).

[0015] The cleaning device (112) performs a cleaning treatment on the substrate. For example, the cleaning device (112) uses SPM: Sulfuric Acid Hydrogen Peroxide Mixture, which is a mixture of H2O2 and sulfuric acid, for removing organic materials such as resist. The cleaning device (112) uses a mixed aqueous solution (SC2: Standard Clean 2), which is a mixture of H2O2 and hydrochloric acid, for removing metals, and a mixed aqueous solution (SC1), which is a mixture of H2O2 and ammonia, for removing particles. In addition, only hot concentrated sulfuric acid is produced during waste liquid treatment. The cleaning device (112) discharges SPM waste liquid containing PFAS. The SPM waste liquid and hot concentrated sulfuric acid discharged from the cleaning device (112) are introduced into the sulfuric acid treatment tank (12). In addition, the cleaning device (112) discharges acid waste containing PFAS. The acid waste discharged from the cleaning device (112) is introduced into the detoxification device (14).

[0016] The etching device (113) performs an etching process to etch away an oxide film or a thin film along the pattern of the formed resist film. The etching device (113) discharges exhaust gas containing PFAS. The exhaust gas discharged from the etching device (113) is introduced into a detoxification device (14).

[0017] The film deposition device (114) forms a wiring film and an insulating film on a substrate. The film deposition device (114) uses various process gases (gases containing or not containing PFAS) and discharges the exhaust gas. The exhaust gas discharged from the film deposition device (114) is introduced into a detoxification device (14).

[0018] The concentrator (11) concentrates the resist waste liquid containing PFAS discharged from the lithography device (111) of the semiconductor manufacturing device (100). That is, the concentrator (11) concentrates the substrate processing waste liquid in the lithography device (111) as a waste liquid containing PFAS. In addition, as described below, the concentrator (11) has a polymer concentrator (11a) and a monomer concentrator (11b) (see FIG. 2), but here they are not distinguished and are described as the concentrator (11). The concentrator (11) concentrates the resist waste liquid using, for example, an ultrafiltration membrane or a reverse osmosis membrane, and also separates the solvent contained in the resist waste liquid (details will be described later). Since the concentrate of the resist waste liquid is a concentrate containing a polymer, it has a high viscosity. The concentrate of the resist waste liquid is introduced into a sulfuric acid treatment tank (12). Additionally, if the alkaline waste liquid discharged from the lithography device (111) is concentrated by the concentrator (11), the alkaline waste liquid may be introduced into the reverse osmosis membrane after being neutralized.

[0019] The solvent separated from the resist waste liquid may be used as a recycled solvent for cleaning cups in a semiconductor manufacturing apparatus (100), or it may be recovered by a solvent recovery company. In the conventional case, when a solvent recovery company attempts to purify the regenerated solvent from the resist waste liquid, there is a possibility that the waste liquid containing the resist manufacturer's confidential material may also be recovered if a component analysis is performed. In this regard, the resist waste liquid passed through the concentrator (11) as in this embodiment can prevent leakage of confidential material to the solvent recovery company because the solid component is included in the concentrate.

[0020] The sulfuric acid treatment tank (12) decomposes and volatilizes the concentrated liquid concentrated by the concentrator (11) into SPM waste liquid. That is, the sulfuric acid treatment tank (12) utilizes the SPM waste liquid from the cleaning device (112). In the SPM waste liquid, the solvent and polymer undergo decomposition reactions such as oxidation or dehydration reactions, resulting in lower molecular weight (lower viscosity). At this time, the temperature of the SPM waste liquid rises due to the exothermic reaction (the temperature of the hot concentrated sulfuric acid in the SPM waste liquid rises). PFAS is not decomposed, but components such as PAG volatilize due to the high temperature of the SPM waste liquid because they have a low boiling point (particularly volatilized due to the effect of the hot concentrated sulfuric acid contained in the SPM waste liquid). Conventionally, SPM waste liquid is treated by adding catalase to suppress foaming, but if the H2O2 component is completely used up and degassed by reacting with organic matter in the sulfuric acid treatment tank (12), foaming does not occur in the downstream sulfuric acid waste liquid, making treatment easier. Additionally, the amount of catalase can be reduced. Since heat of, for example, about 300°C is generated by this reaction, heat difference power generation using heat or steam power generation using steam generated from the circulating water to cool the sulfuric acid treatment tank (12) may be performed. Furthermore, the sulfuric acid waste liquid discharged from the sulfuric acid treatment tank (12) is recovered, for example, by a recycling company. The sulfuric acid waste liquid can have a higher purity of sulfuric acid than conventional waste liquid. Additionally, it is preferable that the sulfuric acid treatment tank (12) be operated in a nitrogen atmosphere, which is an inert gas, to suppress unintended ignition. In addition, the above SPM waste liquid may be a hot concentrated sulfuric acid waste liquid. In the case of hot concentrated sulfuric acid, a decomposition reaction of dehydration occurs in the solvent and polymer, resulting in decomposition (low viscosity). At this time, the temperature of the hot concentrated sulfuric acid rises due to the exothermic reaction, causing PFAS, PAG, etc. to volatilize.

[0021] When the concentrated resist waste liquid is added to the SPM waste liquid stored in the sulfuric acid treatment tank (12) and processed, H2O2 is gradually consumed, and the processing capacity decreases. After supplying an appropriate amount of the concentrated resist waste liquid, the sulfuric acid treatment tank (12) is kept on standby until the reaction subsides and the generation of gas is stopped. Since there is a large amount of SPM waste liquid from the cleaning device (112), it is necessary to process the SPM waste liquid from the cleaning device (112) without delay. For this reason, the sulfuric acid treatment tank (12) may be composed of multiple treatment tanks. In this case, while one treatment tank is processing, preparations such as injecting liquid may be made in another treatment tank. Also, the liquid may be flowed downstream while observing the progress of the reaction, such as the first treatment tank, then the second treatment tank, then the third treatment tank. In addition, if the resist waste liquid is a metal-containing resist, in the same process as described above, only the metal component is precipitated without volatilizing and is treated together with the sulfuric acid waste liquid.

[0022] Since the SPM waste liquid contains hydrogen peroxide, if it is treated as waste liquid, it may cause foaming that puts a strain on the device or worsen the environment with foaming gas. In this regard, in the configuration according to the present embodiment, the residual hydrogen peroxide is effectively utilized, and the foamed gas is also burned as fuel in the detoxification device (14), thereby reducing the strain on the device and the environment.

[0023] The cooler (13) liquefies and collects the gas containing PFAS volatilized by the sulfuric acid treatment tank (12). The cooler (13) separates and collects the gas into a gaseous component, which is a low-molecular-weight gas, and a liquid component, which is a hydrocarbon (HC) extract. As shown in FIG. 2, as the gas from the sulfuric acid treatment tank (12) is cooled in the cooler (13), the liquefied gas is collected as an HC (Hydro Carbon) extract, and the low-molecular-weight gas that has not condensed is also collected. Since the gas generated from the sulfuric acid treatment tank (12) is treated in a nitrogen atmosphere, it becomes a mixed gas with nitrogen. For the mixed gas containing a large amount of nitrogen, the processing volume in the subsequent detoxification device (14) increases; therefore, for example, the low-molecular-weight gas that has not condensed in the cooler (13) may be separated into nitrogen and other components and concentrated using a nano subceramic filter.

[0024] Various types of organic gases and other gases are discharged from the sulfuric acid treatment tank (12) described above. PFAS such as PAG is also discharged as gas. While it is considered to directly introduce these gases into the detoxification device (14), for gases that become liquid at room temperature, transportability can be improved by first liquefying them in the cooler (13). In addition, if transported without liquefying, liquid accumulation may occur in the middle of the piping, making control difficult. Both the liquefied HC extract and the low molecular weight gas that did not condense contain PFAS. The HC extract and the low molecular weight gas are introduced into the detoxification device (14). In addition, to further improve the transportability of the gas, the low molecular weight gas may also be liquefied and then introduced into the detoxification device.

[0025] The detoxification device (14) detoxifies the material after treatment by the cooler (13). The detoxification device (14) may be a combustion detoxification device that burns the material after treatment by the cooler (13). The detoxification device (14) incinerates the HC extract and low molecular weight gas introduced from the cooler (13). Since most of the HC extract is hydrocarbon, it can be burned as fuel. Also, since most of the low molecular weight gas is hydrocarbon with 10 or fewer carbon atoms, it can likewise be burned as fuel. Conventionally, propane gas or city gas is used as fuel in combustion detoxification devices, but since the HC extract, etc. is used as fuel as described above, the amount of propane gas, etc. can be reduced.

[0026] Additionally, the detoxification device (14) may simultaneously combust and detoxify exhaust gas introduced from the etching device (113), exhaust gas introduced from the film deposition device (114), and acid waste introduced from the cleaning device (112). These gases are exhaust gases containing PFAS used in each device. By combusting and detoxifying these gases simultaneously, propane gas, etc., can be further reduced. Additionally, during combustion and detoxification, power generation may be performed by combusting using an internal combustion engine such as a gas turbine. The detoxified gas, such as carbon dioxide, may be recovered and used for the synthesis of organic materials such as formic acid or methanol. Additionally, the detoxification device (14) may be a subcritical treatment device that performs subcritical treatment of the material after treatment by the cooler (13) or a supercritical treatment device that performs supercritical treatment. In addition, the detoxified waste gas may be treated through a scrubber device (a device that washes, neutralizes, or adsorbs exhaust gas and releases it into the atmosphere) to produce F-ion-containing scrubber water and waste gas. The said scrubber water can be converted into calcium fluoride or fluorite by reacting it with calcium. Fluorite is a starting material for fluorine compounds and enables resource recycling.

[0027] Next, details of the PFAS detoxification system (10) shown in FIG. 1 will be explained with reference to FIG. 2 to FIG. 5. FIG. 2 is a configuration diagram of the PFAS detoxification system (10) shown in FIG. 1. FIG. 2 also shows configurations that were omitted from FIG. 1 (such as configurations based on TMAH waste liquid). The PFAS detoxification system (10) further comprises a waste liquid supply path (15), a polymer filter (301) (first filter), a polymer concentrator (11a), and a monomer concentrator (11b). The PFAS detoxification system (10) comprises a circulation path (16). The PFAS detoxification system (10) further comprises a first filtrate flow path (17a), a second filtrate flow path (17b), a third filtrate flow path (18), a fourth filtrate flow path (19), a first reservoir (20xa), a second reservoir (20xb), and a third reservoir (20y). The PFAS detoxification system (10) further comprises a bypass flow path (302). The PFAS detoxification system (10) further comprises a first gas filter (22), a vacuum pump (23), and a distiller (24). The PFAS detoxification system (10) further comprises a second gas filter (25). The PFAS detoxification system (10) further comprises a waste liquid supply path (26), a concentrator (27), a circulation path (28), a developer path (29), a regenerated developer storage section (30), a developer treatment tank (31), a third gas filter (32), and a generator (33). The PFAS detoxification system (10) further comprises a backflow liquid storage section (35). The PFAS detoxification system (10) further comprises a discharge path (37). The PFAS detoxification system (10) further comprises an SPM supply path (38).

[0028] The resist waste liquid containing PFAS discharged from the lithography device (111) flows through the waste liquid supply path (15) and is introduced into a polymer filter (301) provided in the waste liquid supply path (15). The polymer filter (301) classifies the resist waste liquid into a polymer concentrate (first solution) having a polymer (high molecular weight component) at a concentration greater than a predetermined level, and a monomer concentrate (second solution) having a monomer (low molecular weight component) at a concentration greater than a predetermined level, without having a polymer at a predetermined level. For example, the polymer concentrate may contain 20 to 60 weight% of polymer. For example, the monomer concentrate may contain 2 to 30 weight% of monomer. The polymer filter (301) is a filter with coarser mesh than the hollow fiber filter (filter (39), etc.) for extracting the filtrate (solvent) described later. The polymer concentrate classified by the polymer filter (301) passes through the polymer concentrator (11a) and is stored in the sulfuric acid treatment tank (12). Additionally, the monomer concentrate classified by the polymer filter (301) is stored in the monomer concentrator (11b). Thus, the monomer concentrator (11b) is a storage unit for storing the monomer concentrate.

[0029] The circulation path (16) is a circulation path connected to a monomer concentrator (11b), and a filter (39) that excludes polymers is provided in the middle of the path. The filter (39) is, for example, a hollow fiber filter. By providing the filter (39), the monomer concentrate is concentrated. The filtrate (solvent) that passes through the filter (39) flows through the first filtrate path (17a) and is stored in the first storage section (20xa). Such filtrate is a low-concentration PFAS solution. The first storage section (20xa) is a storage section connected to the first filtrate path (17a) and stores the filtrate. The second filtrate path (17b) is a path connecting the first storage section (20xa) and the second storage section (20xb). A filter (40a) is provided in the second filtrate path (17b). The filter (40a) is, for example, an ion exchange resin filter. By providing the filter (40a), the filtrate passing through the filter (40a) can be made into a solution with a low PFAS content. The filtrate (solvent) passing through the filter (40a) flows through the second filtrate flow path (17b) and is stored in the second storage section (20xb). The second storage section (20xb) is connected to the third filtrate flow path (18) and is a storage section for storing the filtrate. The third filtrate flow path (18) is a flow path connecting the second storage section (20xb) and the third storage section (20y). A filter (40b) is provided in the third filtrate flow path (18). The filter (40b) is, for example, an ion exchange resin filter. By providing a filter (40b), the filtered liquid passing through the filter (40b) can be made into a solution that contains almost no PFAS. The filtered liquid passing through the filter (40b) flows through the third filtered liquid flow path (18) and is stored in the third storage section (20y). This filtered liquid can be used as a regeneration solvent and flows outward from the fourth filtered liquid flow path (19) downstream from the third storage section (20y).

[0030] For the filtered liquid, for example, it may be introduced (reverse flow) from the outlet side of the polymer filter (301) through the third filtered liquid path (18) and the bypass path (302). By doing so, the clogging of polymer components, etc. in the polymer filter (301) can be cleared. This reverse flow of the filtered liquid may be carried out, for example, by a gas pressurizing or a pumping unit. Since the polymer solution has a high concentration and high viscosity, a large amount of solvent is required to wash it, for example, with a solvent, and other means require treatment such as UV irradiation, oxidation by ozone, or plasma irradiation. In this regard, by using the method of reverse flow of the filtered liquid, there is no need to prepare a separate solvent or perform UV irradiation, and the polymer filter (301) can be cleaned simply and appropriately.

[0031] The composition of the monomer concentrator (11b), circulation path (16), filter (39, 40a, 40b), first filtrate path (17a), first storage section (20xa), second filtrate path (17b), second storage section (20xb), third filtrate path (18), etc. constitutes a low molecular weight component processing section. The low molecular weight component processing section performs a treatment to increase the concentration of low molecular weight components, such as PFAS, on the monomer concentrate classified by the polymer filter (301). In particular, among the low molecular weight component processing section, the circulation path (16) and the filter (39) function as a circulation filtration mechanism that circulates the monomer concentrate to filter out low molecular weight components. In addition, the configuration of the filter (40a, 40b), the first filtrate flow path (17a), the first storage section (20xa), the second filtrate flow path (17b), the second storage section (20xb), the third filtrate flow path (18), etc. functions as a purification mechanism for removing PFAS from the filtrate that has passed through the circulation filtration mechanism.

[0032] Additionally, regarding the components downstream of the waste liquid supply path (15), for example, the polymer filter (301) and the low molecular weight component treatment section, they may be provided separately for each type of solvent included in the waste liquid.

[0033] FIG. 3 is a diagram illustrating the treatment in the monomer concentrator (11b). As shown in FIG. 3, the PFAS detoxification system (10) further comprises a PFAS foam collection chamber (311) (PFAS collection unit). The PFAS foam collection chamber (311) is configured to collect the PFAS foam collected within the monomer concentrator (11b). The inlet of the PFAS foam collection chamber (311) is located downstream of the flow of the monomer concentrate along the liquid surface of the monomer concentrator (11b).

[0034] In the monomer concentrator (11b), microbubbles are generated by air or nitrogen in the monomer concentrate from which the polymer has been removed. Since PFAS accumulates at the interface due to the microbubbles, it becomes possible to recover a high concentration of PFAS foam liquid, such as by scooping out the supernatant. As shown in FIG. 3, a joining point (15x) for adding air or nitrogen is provided in the middle of the waste liquid supply path (15), and air or nitrogen is introduced into the monomer concentrator (11b) along with the monomer concentrate. Among the circulation paths (16), the inlet path (16a) for introducing the monomer concentrate into the filter (39) recovers the monomer concentrate from near the bottom of the monomer concentrator (11b) (a deep point away from the liquid surface). Additionally, among the circulation paths (16), the discharge path (16b) that returns the monomer concentrator (11b) from the filter (39) returns the monomer concentrate to the vicinity of the liquid level of the monomer concentrator (11b). A joining point (16x) for adding air or nitrogen is provided in the middle of the discharge path (16b). In this way, by sending air or nitrogen to the vicinity of the liquid level in both the waste liquid supply path (15) and the discharge path (16b), microbubbles can be generated near the liquid level and the concentrated PFAS can be collected at the interface. The waste liquid supply path (15) and the discharge path (16b) function as microbubble generating parts that generate microbubbles in the monomer concentrate of the monomer concentrator (11b). And, by having the inlet of the PFAS foam liquid collection chamber (311) located downstream of the flow of monomer concentrate along the liquid surface of the monomer concentrator (11b), high concentration of PFAS foam liquid can be recovered in the PFAS foam liquid collection chamber (311), such as by scooping up the supernatant liquid of the interface.

[0035] Since the PFAS concentration is lowered near the bottom of the monomer concentrator (11b), the PFAS concentration in the monomer concentrate that is recovered by the inflow path (16a) and introduced into the filter (39) is lowered. This allows the solvent recycling rate to be increased.

[0036] The PFAS foam may be discharged through the flow path (312) to a sulfuric acid treatment tank (12) that stores SPM and burned in the sulfuric acid treatment tank (12), or the gas may be incinerated by evaporation through heating before being discharged to the sulfuric acid treatment tank (12). Additionally, the PFAS foam may be treated together with the PFAS component that coagulates. Furthermore, if PFAS remains in the sulfuric acid treatment tank (12) without vaporizing, there is a risk that it will be mixed into the residual sulfuric acid waste liquid and become a source of contamination. For this reason, the PFAS foam may be discharged directly to a detoxification device (14) (details will be described later). Additionally, the flow path of the PFAS foam may be switched periodically, and depending on the amount of SPM or polymer concentrate in the sulfuric acid treatment tank (12), the PFA foam may be discharged to the sulfuric acid treatment tank (12).

[0037] Returning to FIG. 2, the polymer concentrate passes through a polymer concentrator (11a) and flows into a sulfuric acid treatment tank (12). In the sulfuric acid treatment tank (12), the polymer concentrate is decomposed and volatilized into SPM waste liquid. As a result, a decomposition reaction of oxidation or dehydration occurs, and it is decomposed into carbon monoxide, carbon dioxide, nitrogen, water vapor, hydrocarbon gases, and gases containing PFAS. In this case, the gas released is at a temperature of 100°C or higher. Then, the gas volatilized in the sulfuric acid treatment tank (12) is separated by a first gas filter (22). The first gas filter (22) is a filter that separates the gas volatilized by the sulfuric acid treatment tank (12) into PFAS-rich gas and gas from which PFAS removal has been completed. The first gas filter (22) is, for example, an osmosis vaporization filter, and may be a ceramic filter. The first gas filter (22) receives heat generated in the sulfuric acid treatment tank (12) and is heated to a higher temperature than the concentrate before decomposition. The first gas filter (22) may receive heat generated in the sulfuric acid treatment tank (12) by being placed in the same space as the sulfuric acid treatment tank (12) or by being connected to the sulfuric acid treatment tank (12) by a conductive member such as metal. Furthermore, the PFAS-rich gas referred to in this embodiment is a gas in a state where the concentration of PFAS is higher than that of the gas before it is affected by a predetermined action. Here, separation by the first gas filter (22) corresponds to the predetermined action. Furthermore, in this embodiment, the predetermined action is not limited to separation by the first gas filter (22), and if PFAS-rich gas is generated, the action that causes such generation can be considered the predetermined action.

[0038] The first gas filter (22), which is a permeation vaporization filter, is a filter that separates gases by utilizing the difference in momentum according to the difference in molecular weight. That is, the first gas filter (22) allows gases with relatively small molecular weights (nitrogen, carbon monoxide, carbon dioxide, water vapor, etc.) to pass through (flow downstream) by, for example, reducing the pressure on the downstream side, and also prevents gases with relatively large molecular weights (PFAS, hydrocarbons) from passing through. By doing so, the PFAS-rich gas and the gas from which PFAS removal has been completed can be roughly separated.

[0039] The vacuum pump (23) is a pump that reduces the pressure on the downstream side of the first gas filter (22) to realize the separation of gas by the first gas filter (22) described above. The cooler (13) liquefies and collects the gas containing PFAS. The collected liquid and gas are stored in the distiller (24). The liquid PFAS and hydrocarbons, and the gaseous PFAS and hydrocarbons (and ozone described later) are introduced from the distiller (24) to the detoxification device (14).

[0040] In the PFAS detoxification system (10), outside air (air) is introduced, and the outside air is separated into nitrogen and oxygen by a second gas filter (25). That is, the second gas filter (25) separates the outside air into a gas with a nitrogen concentration higher than that of air (here simply referred to as nitrogen) and a gas with an oxygen concentration higher than that of air (here simply referred to as oxygen). Then, the second gas filter (25) supplies nitrogen to the sulfuric acid treatment tank (12). This suppresses ignition in the sulfuric acid treatment tank (12). In addition, the second gas filter (25) supplies oxygen to the detoxification device (14). This promotes combustion in the detoxification device (14). In addition, ozone generated from the aforementioned oxygen may be supplied to the detoxification device (14). This ozone may be supplied to a distiller (24) and introduced into a detoxification device (14), or it may be introduced directly into a detoxification device (14). The method of generating ozone from oxygen may be, for example, UV irradiation or discharge.

[0041] In the PFAS detoxification system (10), TMAH waste liquid, which is a positive type developer, is introduced from, for example, a lithography device (111). Then, in the PFAS detoxification system (10), the TMAH waste liquid discharged from the lithography device (111) of the semiconductor manufacturing device (100) is concentrated in a concentrator (27). In addition, the first concentrate, which is a concentrate of the positive type developer concentrated by the concentrator (27), is decomposed and volatilized in a developer treatment tank (31).

[0042] The waste liquid supply path (26) is a supply path that supplies TMAH waste liquid introduced from the lithography device (111) to the concentrator (27). The waste liquid supply path (26) and the waste liquid supply path (15) that supplies resist waste liquid to the concentrator (11) are provided separately from each other. A filter (41) that excludes polymers is provided in the waste liquid supply path (26). Thus, the filter (41) is a filter for developing waste liquid that removes polymers from the TMAH waste liquid. The circulation path (28) is a circulation path connected to the concentrator (27), and a filter (42) for high concentration of PFAS is provided in the middle of the path. The developing liquid (PFAS-free developing liquid) that has passed through the filter (42) passes through the developing liquid path (29) and is stored in the regenerating developing liquid storage section (30). This developing liquid can be used as a regenerating developing liquid. In this way, the filter (42) is a positive development waste liquid treatment unit that separates the TMAH waste liquid into a PFAS concentrated developer and a PFAS de-developer. The PFAS de-developer may be flowed back from the secondary side to the filter (41). The backflow liquid storage unit (35) is a developer filter cleaning liquid room that stores the liquid that has flowed back and passed through the filter (41) in this manner.

[0043] The concentrate concentrated in the concentrator (27) is supplied to the developer treatment tank (31) via the concentrate flow path (45). The developer treatment tank (31) is provided adjacent to the sulfuric acid treatment tank (12) described above. Specifically, the developer treatment tank (31) is provided to surround the sulfuric acid treatment tank (12) from the lower side. By doing so, the developer treatment tank (31) receives heat from the sulfuric acid treatment tank (12) and can decompose and volatilize the first concentrate by the heat. Furthermore, the method of decomposing the first concentrate is not limited to heat; for example, the first concentrate may be decomposed by exposure to microorganisms. Additionally, the first concentrate may be used as a cooling solvent for the SPM inside the sulfuric acid treatment tank (12).

[0044] In the developer treatment tank (31), TMAH decomposed by heat (e.g., heat of about 140°C) is decomposed into trimethylamine and dimethyl ether. These gases can be used as fuel in the detoxification device (14). PFAS is not decomposed by heat and is released as a gas, which is then burned in the detoxification device (14). The gas released from the developer treatment tank (31) contains nitrogen, water vapor, hydrocarbons, trimethylamine, dimethyl ether, PFAS, etc. The third gas filter (32) allows gases with relatively small molecular weights (nitrogen, water vapor, etc.) to pass through (flow downstream) by, for example, reducing the pressure on the downstream side, and also prevents gases with relatively large molecular weights (trimethylamine, dimethyl ether, PFAS, hydrocarbons) from passing through. By doing so, the PFAS-rich gas and the gas from which PFAS removal has been completed can be roughly separated. Nitrogen and water vapor, etc. are discharged outside the system. Additionally, power generation can be achieved by utilizing the pressure difference as the discharged water vapor is returned to water in the generator (33). Gases containing PFAS, etc., sent to the detoxification device (14) may be sent to the detoxification device (14) after being compressed.

[0045] The detoxification device (14) may have a combustion chamber that mixes and burns the gas volatilized by the developer treatment tank (31) and the gas volatilized by the sulfuric acid treatment tank (12). As described above, the PFAS foam liquid may be introduced into the detoxification device (14) in a mist form (see FIGS. 4 and 5). In this case, as shown in FIGS. 4 and 5, the PFAS foam liquid is introduced into the detoxification device (14) together with a gas that does not contain oxygen. The gas that does not contain oxygen here may include various gases generated in the PFAS detoxification system (10).

[0046] As shown in FIG. 5, specifically, the PFAS foam liquid and the oxygen-free gas are misted and introduced into the combustion chamber (14a) of the detoxification device (14). By misting the PFAS foam liquid, the PFAS foam liquid can be burned all at once. The organic gas is burned down to CO2 or H2O. The bond between C and F of the PFAS gas is broken, and C is exhausted as CO2 and F as F ions (fluoride ions). Then, in the scrubber chamber (14b) of the detoxification device (14), the F ions are dissolved in water and recovered as HF (hydrofluoric acid). Afterwards, they are neutralized, for example, by sodium hydroxide and become waste liquid.

[0047] When the reaction between the resist concentrate and the SPM waste liquid proceeds in the sulfuric acid treatment tank (12), the hydrogen peroxide in the SPM is deactivated, and the reaction capacity is significantly reduced. At this time, the SPM becomes concentrated sulfuric acid and can cause a dehydration reaction, but the carbonization of organic matter proceeds and the liquid turns yellow or brown. For this reason, for example, when the liquid turns yellow, the SPM waste liquid is discharged from the discharge channel (37). At this time, the carbonized material is filtered by the filter (43) provided in the discharge channel (37). The discharged SPM waste liquid has lost hydrogen peroxide and the purity of the sulfuric acid has increased due to filtering by the filter (43), so it can be used as regenerated sulfuric acid.

[0048] When supplying new SPM waste liquid to the sulfuric acid treatment tank (12), the filter (43) trapping carbons can be cleaned by introducing a portion of the SPM waste liquid from the outlet side of the filter (43). That is, in the SPM supply path (38) for supplying new SPM waste liquid to the sulfuric acid treatment tank (12), the SPM waste liquid may be flowed through the path connected to the outlet of the filter (43) to react with the carbons trapped in the filter (43). As a result, the carbons trapped in the filter (43) become carbon dioxide and are exhausted, and the filter (43) is cleaned.

[0049] Next, the effects of the PFAS detoxification system (10) according to the present embodiment will be explained.

[0050] The PFAS detoxification system (10) according to the present embodiment is a treatment device that performs treatment on waste liquid discharged from a semiconductor manufacturing device (100), and comprises a polymer filter (301) and a low molecular weight component treatment unit. The polymer filter (301) is a filter that classifies resist waste liquid into a polymer concentrate having a polymer concentration greater than or equal to a predetermined concentration and a monomer concentrate having a monomer concentration greater than or equal to a predetermined concentration without having a polymer concentration greater than or equal to a predetermined concentration. The low molecular weight component treatment unit is composed of a monomer concentrator (11b), a circulation path (16), filters (39, 40a, 40b), a first filtrate path (17a), a first storage unit (20xa), a second filtrate path (17b), a second storage unit (20xb), a third filtrate path (18), etc. The low molecular weight component processing unit performs a treatment to increase the concentration of PFAS, which is a low molecular weight component, on the monomer concentrate classified by the polymer filter (301).

[0051] In this way, after the polymer and monomer are separated in the polymer filter (301), a treatment to increase the concentration of PFAS (i.e., a treatment to exclude PFAS) is performed on the monomer concentrate, etc. By doing so, the treatment of the component to be removed and detoxified can be carried out more smoothly. As described above, according to the PFAS detoxification system (10) according to the present embodiment, the removal or detoxification of emissions resulting from semiconductor manufacturing can be carried out smoothly.

[0052] The low molecular weight component processing unit may include a circulating filtration mechanism that filters low molecular weight components by circulating a monomer concentrate, and a purification mechanism that removes PFAS from the filtrate that has passed through the circulating filtration mechanism. With this configuration, PFAS can be efficiently removed, thereby facilitating the removal or detoxification of emissions resulting from semiconductor manufacturing.

[0053] The polymer filter (301) and low molecular weight component treatment unit described above may be provided separately for each type of solvent included in the waste liquid. By doing so, the removal of PFAS, etc., can be appropriately performed for each of the various solvents.

[0054] The PFAS detoxification system (10) may further include a filter (42) that separates the TMAH waste liquid into a PFAS concentrated developer and a dePFAS developer, and a filter (41) that removes polymers from the TMAH waste liquid. Additionally, the PFAS detoxification system (10) may include a reverse liquid storage unit (35) that stores the liquid passed by the dePFAS developer by flowing it back from the secondary side to the filter (41). With this configuration, PFAS can be properly removed from the TMAH waste liquid, and the filter (41) can be properly cleaned by the reversed liquid.

[0055] The molecular component processing unit may further include a monomer concentrator (11b) for storing monomer concentrate and a PFAS foam collection chamber (311) having an inlet located downstream of the flow of monomer concentrate along the liquid surface of the monomer concentrator (11b). With this configuration, PFAS collected along the flow of monomer concentrate can be properly recovered.

[0056] The low molecular weight component processing unit may further have a microbubble generating unit that generates microbubbles in the monomer concentrate of the monomer concentrator (11b). With this configuration, microbubbles are generated to collect the concentrated PFAS at the interface, and the PFAS can be appropriately recovered by the PFAS foam liquid collection chamber (311) described above.

[0057] Although the above embodiments have been described, the present disclosure is not limited thereto. For example, as a circulating filtration mechanism, one filter (39) provided in the circulation path (16) has been described, but is not limited thereto. The circulating filtration mechanism may have a plurality of (for example, four) filters (39a, 39b, 39c, 39d) (secondary filters) and a passage order switching mechanism that switches the serial passage order of the monomer concentrate in the plurality of filters (39a, 39b, 39c, 39d).

[0058] FIGS. 6 to 8 illustrate a circulating filtration mechanism according to a modified example. As shown in FIG. 6, a plurality of filters (39a, 39b, 39c, 39d) provided in a circulating channel (16), which is a channel connected to a monomer concentrator (11b), are connected in series with each other. Here, for example, if the monomer concentrate always flows in the order of filter (39a), filter (39b), filter (39c), and filter (39d), filter (39a) becomes the most contaminated. As a means to equalize the contamination of such filters, the above-described passing order switching mechanism is employed.

[0059] In FIG. 7, filter (39a) is labeled 'A', filter (39b) is labeled 'B', filter (39c) is labeled 'C', and filter (39d) is labeled 'D'. Additionally, the flow paths and valves between each filter are schematically shown. Here, an example is described in which the serial passing order of the monomer concentrate in each filter is switched by controlling the opening and closing of the valve. For this reason, each valve corresponds to the passing order switching mechanism described above. Additionally, although four filters are in series in the drawing, this is not limited thereto, and two or more filters may be in series.

[0060] In the example shown in FIG. 7 (a), the valves are controlled so that the monomer concentrate passes in the order of 'A → B → C → D'. That is, the valve (601) of the flow path facing 'A' is open so that the monomer concentrate flowing through the circulation path (16) flows in the direction of 'A'. In addition, the valve (602) of the flow path facing 'B', the valve (603) of the flow path facing 'C', and the valve (604) of the flow path facing 'D' are all closed so that the monomer concentrate flowing through the circulation path (16) does not flow in the directions of 'B', 'C', and 'D' first. Subsequently, the valve (605) of the flow path between 'A' and 'B' is open so that the monomer concentrate flows from 'A' to the direction of 'B'. In addition, the valves (606) of the flow paths between 'A' and 'C' and between 'A' and 'D' are closed. Subsequently, the valve (607) of the flow path between 'B' and 'C' is opened so that the monomer concentrate flows from 'B' toward 'C'. Additionally, the valve (608) of the flow path between 'B' and 'D' is closed. Subsequently, the valve (609) of the flow path between 'C' and 'D' and the valve (610) of the flow path between 'D' and the filtrate reservoir are opened so that the monomer concentrate flows from 'C' toward 'D' and then flows from 'D' toward the filtrate reservoir.

[0061] In addition, in the example shown in FIG. 7 (b), the valves are controlled so that the monomer concentrate passes in the order of 'B → C → D → A'. That is, the valve (602) is open so that the monomer concentrate flowing through the circulation path (16) flows in the direction of 'B'. Also, so that the monomer concentrate flowing through the circulation path (16) does not flow first in the directions of 'A', 'C', and 'D', the valve (601) of the path in the direction of 'A', the valve (603) of the path in the direction of 'C', and the valve (604) of the path in the direction of 'D' are all closed. Subsequently, the valve (607) of the path between 'B' and 'C' is open so that the monomer concentrate flows from 'B' to the direction of 'C'. Also, the valve (605) of the path between 'B' and 'A' and the valve (608) of the path between 'B' and 'D' are closed. Subsequently, the valve (609) of the flow path between 'C' and 'D' is opened so that the monomer concentrate flows from 'C' toward 'D'. Subsequently, the valve (611) of the flow path between 'D' and 'A' and the valve (606) of the flow path between 'A' and the filtrate reservoir are opened so that the monomer concentrate flows from 'D' toward 'A' and then flows from 'A' toward the filtrate reservoir.

[0062] Additionally, prior to the option of replacing the filter, for example, the filter fluid (thinner) may be flowed back to remove clogging (impurities) in the filter. In this case, the cleaning of one of the multiple filters may be strengthened. Such filter cleaning may be performed sequentially after a certain amount of processing. In the example shown in FIG. 7 (c), for the purpose of cleaning 'A' (filter (39a)), only the valve (606) of the flow path between the filter fluid reservoir and 'A' is open so that the filter fluid flows in the direction of 'A'. Additionally, the valve (601) is closed so that the filter fluid flows from 'A' to the drainage path (650).

[0063] Instead of the valve described above, the passing order may be switched by a three-way valve. In FIG. 8, filter (39a) is labeled 'A', filter (39b) is labeled 'B', filter (39c) is labeled 'C', and filter (39d) is labeled 'D'. Additionally, the flow paths between each filter and the three-way valve are schematically shown. Here, an example is described in which the serial passing order of the monomer concentrate in each filter is switched by controlling the three-way valve. For this reason, each three-way valve corresponds to the passing order switching mechanism described above.

[0064] In the example shown in FIG. 8 (a), the three-way valve is controlled so that the monomer concentrate passes in the order of 'A → B → C → D'. That is, the three-way valve (701) of the flow path facing 'A' is controlled so that the monomer concentrate flowing through the circulation path (16) flows in the direction of 'A'. In addition, the three-way valve (702) of the flow path facing 'B', the three-way valve (703) of the flow path facing 'C', and the three-way valve (704) of the flow path facing 'D' are controlled so that the monomer concentrate flowing through the circulation path (16) does not flow first in the directions of 'B', 'C', and 'D'. Subsequently, the three-way valve (702) of the flow path between 'A' and 'B' is controlled so that the monomer concentrate flows from 'A' to the direction of 'B'. Additionally, the valve (706) of the flow path between 'A' and 'C' and between 'A' and 'D' is closed so that it does not flow in the direction of 'C' and 'D'. Subsequently, the three-way valve (703) of the flow path between 'B' and 'C' is controlled so that the monomer concentrate flows from 'B' toward 'C'. Additionally, the valve (708) of the flow path between 'B' and 'D' is closed. Subsequently, the three-way valve (704) of the flow path between 'C' and 'D' is controlled so that the monomer concentrate flows from 'C' toward 'D' and then flows from 'D' toward the filtrate reservoir, and the valve (710) of the flow path between 'D' and the filtrate reservoir is open.

[0065] In addition, in the example shown in FIG. 8 (b), the valves are controlled so that the monomer concentrate passes in the order of 'B → C → D → A'. That is, the three-way valve (702) of the flow path facing 'B' is controlled so that the monomer concentrate flowing through the circulation path (16) flows in the direction of 'B'. In addition, the three-way valve (701) of the flow path facing 'A', the three-way valve (703) of the flow path facing 'C', and the three-way valve (704) of the flow path facing 'D' are controlled so that the monomer concentrate flowing through the circulation path (16) does not flow in the directions of 'A', 'C', and 'D' first. Subsequently, the three-way valve (703) of the flow path between 'B' and 'C' is controlled so that the monomer concentrate flows from 'B' to the direction of 'C'. In addition, the valve (708) of the flow path between 'B' and 'D' is closed. Subsequently, the three-way valve (704) of the flow path between 'C' and 'D' is controlled so that the monomer concentrate flows from 'C' to 'D'. Subsequently, the three-way valve (701) of the flow path between 'D' and 'A' is controlled so that the monomer concentrate flows from 'D' to 'A' and then flows from 'A' to the filtrate reservoir, and the valve (706) of the flow path between 'A' and the filtrate reservoir is open.

[0066] Additionally, prior to the option of replacing the filter, for example, the filter fluid (thinner) may be reversed to remove clogging (impurities) in the filter. In this case, the cleaning of one of the multiple filters may be intensified. Such filter cleaning may be performed sequentially after a certain amount of processing. In the example shown in FIG. 8 (c), for the purpose of cleaning 'A' (filter (39a)), only the valve (706) of the flow path between the filter fluid reservoir and 'A' is open so that the filter fluid flows in the direction of 'A'. Additionally, the three-way valve (701) is controlled so that the filter fluid flows from 'A' to the drainage path (750).

[0067] As described above, the circulating filtration mechanism has multiple filters, and by switching the order in which the monomer concentrate passes through each filter, it is possible to avoid contamination of only some of the filters.

[0068] [Second Embodiment]

[0069] Next, a second embodiment of the present disclosure will be described. In describing the second embodiment, descriptions that overlap with the first embodiment will be omitted, and the differences from the first embodiment will be mainly described.

[0070] In the first embodiment described above, the PFAS detoxification system (10) among the processing system (1) was mainly described. In this embodiment, an example of the configuration of the semiconductor manufacturing device (100) (substrate processing device) included in the processing system (1) is described in detail. Furthermore, the semiconductor manufacturing device (100) described below does not necessarily have to be configured to be used as a set with the PFAS detoxification system (10).

[0071] FIG. 9 is a schematic diagram of a processing system (1) according to a second embodiment. The processing system (1) includes a semiconductor manufacturing device (100). Waste liquid and exhaust discharged from the semiconductor manufacturing device (100) are processed in a PFAS detoxification system (10) as described above. Additionally, the semiconductor manufacturing device (100) operates by receiving power, etc. from a power generation / energy storage device (3) and a power supply device (2) for each module.

[0072] A semiconductor manufacturing apparatus (100) is a system that performs the formation of a photosensitive film, exposure of the photosensitive film, and development of the photosensitive film on a substrate. The substrate to be processed is a semiconductor wafer. The semiconductor manufacturing apparatus (100) is sized to fit into, for example, a cleanroom, and if the cleanroom is sufficiently high, it may be made as a high-rise structure, for example, a two-story building, by making full use of the height of the cleanroom.

[0073] As shown in FIGS. 9 and 10, the semiconductor manufacturing apparatus (100) comprises a processing block (800), an exposure device (801), an interface block (802) (relay block), and a carrier block (803) (input / output block). In the semiconductor manufacturing apparatus (100), for example, an exposure device (801) is provided at the end, and an interface block (802), a processing block (800), and a carrier block (803) are provided sequentially from the side closest to the exposure device (801).

[0074] The exposure device (801) performs an exposure treatment of a resist film (photosensitive film) applied on a wafer. Specifically, the exposure device (801) irradiates an energy line to the portion of the resist film to be exposed by a method such as EUV or immersion exposure. In addition, other semiconductor manufacturing devices other than the exposure device may be connected instead of the exposure device (801). Other semiconductor manufacturing devices may be, for example, devices that perform processes such as film deposition or cleaning, and the processing method may be a processing method per single substrate or a batch processing method that processes multiple substrates.

[0075] The carrier block (803) performs the introduction of wafers into the processing block (800) and the removal of wafers from the processing block (800). The carrier block (803) is capable of supporting a carrier that accommodates multiple wafers, and performs the introduction and removal of the wafers described above by introducing and removing the said carrier. The carrier block (803) is provided with a plurality of carrier placement tables (not shown) and a wafer transport device (not shown).

[0076] The interface block (802) is connected to the processing block (800) and also performs wafer transfer between the processing block (800) and the exposure device (801). FIG. 11 is a diagram illustrating the interface block (802). FIG. 11 (a) shows a plan view of the interface block (802), FIG. 11 (b) shows a front view of the interface block (802), and FIG. 11 (c) shows a side view of the interface block (802). As shown in FIG. 11 (c), the interface block (802) incorporates a transport device (802x, 802y) including a transfer arm and is connected to the exposure device (801). Additionally, the interface block (802) has a load lock (802a, 802b) that functions as a vacuum environment switching chamber. The load lock (802a, 802b) is configured to be retractable so that the wafer can be transferred in a vacuum environment. Additionally, the interface block (802) is connected to the air-machine processing transport path (821), vacuum-system processing transport path (822), and bypass transport path (823) described later.

[0077] Returning to FIG. 10, the processing block (800) is equipped with an air system module (850) (air system processing group), a vacuum system module (860) (vacuum system processing group), and a conveying path (804). Below, details of the processing block (800) will be described with reference to FIG. 12 through FIG. 15 in addition to FIG. 10.

[0078] The air machine module (850) is an air machine processing group comprising a plurality of air machine processing devices. The vacuum system module (860) is a vacuum system processing group comprising a plurality of vacuum system processing devices and located directly above the air machine module (850). The vacuum system module (860) is located directly above the air machine module (850) via mounting bases (811, 812).

[0079] The mounting bases (811, 812) are positioned to cover the air machine module (850) and support the vacuum system module (860). As shown in FIG. 12, the mounting base (811) has a pair of legs (811a, 811a) and a support member (811b) installed between the pair of legs (811a, 811a). The mounting base (812) has a pair of legs (812a, 812a) and a support member (812b) installed between the pair of legs (812a, 812a). The mounting bases (811, 812) may have the same configuration as each other, for example. The mounting base (811) may cover, for example, half of the air machine processing device on the side closer to the carrier block (803) in the air machine module (850). Additionally, the mounting base (812) may cover half of the air processing device on the side closest to the interface block (802) in the air processing module (850), for example. Additionally, the mounting base (811, 812) may be capable of supporting the vacuum system module (860) and does not necessarily have to cover the entire upper surface area of ​​the air processing module (850).

[0080] FIG. 13(a) is a schematic diagram of a vacuum system module (860) viewed from a plan view, and FIG. 13(b) is a schematic diagram of an atmospheric system module (850) viewed from a plan view. In the example shown in FIG. 13(a), a plurality of etching devices (113) and a plurality of film deposition devices (114) are provided as components of the vacuum system module (860). By lowering the height of these etching devices (113) and film deposition devices (114), it is possible to place each component of the atmospheric system module (850), which will be described later, in the gap below. Additionally, the vacuum system module (860) may include a gas-based resist film deposition device or a developing device.

[0081] In addition, in the example shown in FIG. 13 (b), the configuration of the atmosphere module (850) includes a plurality of coating devices (851), a plurality of developing devices (852), a plurality of heat treatment devices (853), and a plurality of cleaning devices (112). Furthermore, the types and number of devices included in any module are not limited thereto.

[0082] Each component of the aforementioned module is designed to be pulled out and inserted like a wardrobe drawer for maintenance and replacement. The force required for each component of each module may be supplied, for example, via an auto coupler. This allows each component of each module to be safely attached and detached.

[0083] FIG. 14 is a diagram illustrating each transport path (804). A semiconductor manufacturing apparatus (100) is equipped with a transport path (804) including a transport path (821) for atmospheric processing, a transport path (822) for vacuum processing, and a bypass transport path (823).

[0084] The conveyor path (821) for machine processing is a conveyor path that conveys wafers to each of the above-described components of the machine module (850). The conveyor path (821) for machine processing is extended between the carrier block (803) and the interface block (802) so as to be connected to both the carrier block (803) and the interface block (802).

[0085] The vacuum system processing transport path (822) is a transport path that transports wafers to each of the above-described components of the vacuum system module (860). The vacuum system processing transport path (822) is extended between the carrier block (803) and the interface block (802) so as to be connected to both the carrier block (803) and the interface block (802). The vacuum system processing transport path (822) is extended to a height corresponding to the vacuum system module (860) above the air system module (850), and is extended above the air system processing transport path (821).

[0086] The bypass transport path (823) is a transport path that transfers wafers between the carrier block (803) and the interface block (802) above the vacuum system processing transport path (822). By using the bypass transport path (823), wafers can be transported more quickly (at once).

[0087] Next, an example of maintenance of an exhaust line utilizing the characteristics of the above-described air system module (850) and vacuum system module (860) being unitized is described. Figures 15 (a) and (b) illustrate the switching of an exhaust line.

[0088] As shown in FIG. 15 (a), for example, in a film formation device (114) of a vacuum system module (860), a chamber (114a) is connected to a pressure reduction exhaust line (842) via a turbo molecular pump (114b). The pressure reduction exhaust line (842) is a pressure reduction exhaust line of the film formation device (114), which is a vacuum system processing device. Additionally, for example, an atmosphere exhaust line (841) is extended from a plurality of heat treatment devices (853) of an atmosphere system module (850). Currently, the pressure reduction exhaust line (842) and the atmosphere exhaust line (841) are extended in close proximity to each other and in parallel.

[0089] In this case, for example, as shown in FIG. 15(b), a portion of the exhaust line (841a) extending from the heat treatment device (853) is configured to be switchably connected to join the pressure reduction exhaust line (842). In this case, the sublimation accumulated in the piping of the heat treatment device (853) can be exhausted by the vacuum flowing through the pressure reduction exhaust line (842), thereby allowing the sublimation to be properly discharged. This switching of exhaust may be performed at a time when no semiconductor is being manufactured or at a time for maintenance. In this configuration, the exhaust line (841a) is a pressure reduction exhaust switching unit that enables the interior of the atmospheric processing device to be reduced in pressure.

[0090] In addition, generally, the pressure reduction exhaust line and the atmospheric exhaust line may be heated to avoid blockage by sediment. In this case, the total amount of energy can be reduced by heating them simultaneously rather than heating them individually. That is, the total amount of energy can be reduced by heating the pressure reduction exhaust line (842) and the atmospheric exhaust line (841) described above simultaneously. In addition, the method of supplying heat in this case may be, for example, heat energy from the detoxification device (14), heat generation energy from the cleaning device (112), or power generation energy (electricity) within the device.

[0091] Next, the effects of operation on the semiconductor manufacturing device (100) according to the present embodiment will be explained.

[0092] A semiconductor manufacturing device (100) comprises a carrier block (803) for receiving and discharging carriers, a machine module (850) including a plurality of machine processing devices, and a vacuum module (860) located directly above the machine module (850) and including a plurality of vacuum processing devices. The semiconductor manufacturing device (100) also comprises a machine processing transport path (821) for transferring wafers to machine processing devices and a vacuum processing transport path (822) for transferring wafers to vacuum processing devices. Furthermore, the machine processing transport path (821) and the vacuum processing transport path (822) are connected to the carrier block (803).

[0093] In the semiconductor manufacturing apparatus (100) according to the present embodiment, since the air system module (850) and the vacuum system module (860) are positioned vertically, the wiring arrangement, such as the discharge line and the power supply line, can be consolidated. In addition, since a dedicated transport path is provided for each of the two modules in a configuration where they are positioned vertically, the reduction in transport efficiency is suppressed. With the semiconductor manufacturing apparatus (100) as described above, the efficiency of substrate processing can be improved. Furthermore, since the vacuum system module (860) is positioned vertically, maintenance can be performed on the vacuum system processing apparatus from various angles.

[0094] The semiconductor manufacturing device (100) may further be provided with mounting bases (811, 812) that are positioned to cover the air system module (850) and support the vacuum system module (860). With this configuration, a configuration in which two modules are positioned vertically can be easily and appropriately realized. In addition, the presence of the mounting bases (811, 812) suppresses the load on the air system module (850).

[0095] The semiconductor manufacturing apparatus (100) may further be provided with an interface block (802) and a bypass transport path (823) for transporting a wafer between a carrier block (803) and an interface block (802) above a vacuum system module (860). With this configuration, the wafer can be transported more quickly using the bypass transport path (823), thereby further improving the efficiency of substrate processing.

[0096] The semiconductor manufacturing device (100) may further be provided with a pressure reduction exhaust switching unit that enables pressure reduction inside the atmospheric processing device through the atmospheric exhaust line (841), wherein the pressure reduction exhaust line (842) of the vacuum processing device and the atmospheric exhaust line (841) of the atmospheric processing device are connected. With this configuration, the sublime accumulated in the atmospheric exhaust line (841) can be exhausted by the vacuum flowing through the pressure reduction exhaust line (842), thereby allowing the sublime to be properly discharged.

[0097] Although the present embodiment has been described above, the present disclosure is not limited to the above. For example, the configuration of the atmospheric machine module (850) may be configured to control the temperature using exhaust or warm water in the vacuum machine module (860). FIG. 16 is a diagram illustrating an exhaust line according to the present modified example. Currently, in the vacuum machine module, the pressure reduction exhaust line (842) of the film formation device (114), which is a vacuum machine processing device, functions as an array line. Additionally, a heat-conducting heat-conducting member (901) connected to the heat treatment device (853), which is an atmospheric machine processing device, is provided. In this case, by connecting the pressure reduction exhaust line (842), which is an array line, and the heat-conducting member (901) to each other, a heat conduction mechanism (902) that transfers heat to the heat treatment device (853) is provided, thereby allowing the temperature control in the atmospheric machine module to be appropriately performed using the array in the vacuum machine module. The heat conduction mechanism (902) may be connected at all times, or the connection state may be switched based on a signal from a control unit (not shown). Additionally, the pressure reduction exhaust line (842) may be replaced with a pipe that carries hot water. In this case, for example, the heat treatment device (853) may perform preliminary temperature control, use hot water up to about 60°C, and then heat up to the target temperature using electric power.

[0098] In addition, in a configuration where the vacuum system module is placed at the top and the atmospheric system module at the bottom, compared to a configuration that is not unitized in this way, there are advantages such as the following, for example.

[0099] · Footprint reduction

[0100] Footprint reduction is achieved by stacking the vacuum system and the atmosphere system, which were conventionally installed as separate devices, vertically.

[0101] · Q-time control (inter-layer process optimization)

[0102] When multiple devices are provided independently, substrate transport between them is performed by OHT. In contrast, by integrating the vacuum system and the atmospheric system into a single inline device that shares L / P as in the configuration of the present embodiment, it is possible to transition to the next process faster than OHT transport, that is, while stabilizing the time required between processes. It also has merit as a total solution for pattern control. Normally, optimization is performed for each individual device, but as a device connected to each other as in the configuration of the present embodiment, it is easy to comprehensively manage these processing conditions, etc., making it easier to provide optimal processing conditions or results as a series of total processes.

[0103] · Energy saving, waste control

[0104] Since the modules in the vacuum and atmospheric systems are stacked vertically, energy savings can be achieved by utilizing the configuration of one device to control and adjust the environment of another among the multiple vertically positioned devices described above. Regarding waste control, because the vacuum and atmospheric modules are stacked vertically, the space required is concentrated, making it easy to concentrate the waste exhaust section as well. Since the processing units are concentrated, it is easy to implement a compact size. Furthermore, the management of the volume of waste and discharge status of the large processing steps for substrates in the vacuum and atmospheric systems can be accomplished using a single waste treatment system.

[0105] · Flexible return control (makes it easier to return multiple times to the same module; allows free return between upper and lower layers), flexible module placement (COT only, cleaning only, etching only, etc. are also possible)

[0106] Substrates can be distributed and transported to the vacuum and atmospheric systems respectively, and processing within the same module multiple times is also possible by moving them back and forth between the upper and lower layers. When the upper and lower layers are connected on both the CSB side and the opposite side, it is possible to perform processing smoothly by suppressing substrate stagnation through a transport path that circulates between the upper and lower layers. Furthermore, the vacuum layer and atmospheric layer do not necessarily require multiple types of processing devices; a single type of device may be installed, offering a high degree of freedom in device layout.

[0107] · Other merits

[0108] Regarding semiconductor production, there are cases of mass production of identical products and cases of small-batch production of multiple product types. In the case of a configuration like the present embodiment, since it includes various processing modules, the combination of modules used can be selected and executed according to the product type, thereby providing an advantage for small-batch, multi-product production. Even in the case of mass production, there are cases where multiple types of devices are used, or even if the same device is used, multiple units are running parallel processes; therefore, stable product production cannot be achieved without considering the differences between devices. However, in the configuration of the present embodiment, efficient production is possible because the process is stabilized within a small, closed combination.

[0109] Finally, various exemplary embodiments included in the present disclosure are described in [E1] to [E14] below.

[0110] [E1]

[0111] A treatment device for treating waste liquid discharged from a semiconductor manufacturing device,

[0112] With respect to the above waste liquid, a first filter that classifies it into a first solution having a high molecular weight component at a concentration greater than or equal to a predetermined concentration, and a second solution having a low molecular weight component at a concentration greater than or equal to a predetermined concentration and not having a high molecular weight component at a predetermined concentration;

[0113] A processing device comprising a low molecular weight component processing unit that performs a treatment to increase the concentration of the low molecular weight component on the second solution classified by the first filter.

[0114] [E2]

[0115] The above low molecular weight component treatment unit has a circulating filtration mechanism that filters the low molecular weight component by circulating the second solution, and a purification mechanism that removes PFAS from the filtrate that has passed through the circulating filtration mechanism, the treatment device described in [E1].

[0116] [E3]

[0117] The above-described circulating filtration mechanism is a processing apparatus described in [E2] having a plurality of second filters and a pass order switching mechanism for switching the serial pass order of the second solution in the plurality of second filters.

[0118] [E4]

[0119] The first filter and the low molecular weight component treatment unit described above are provided separately for each type of solvent included in the waste liquid, and the treatment device described in any one of [E1] to [E3].

[0120] [E5]

[0121] A positive developer waste liquid treatment unit that separates TMAH waste liquid into PFAS concentrated developer and dePFAS developer, and

[0122] A filter for developing waste liquid that removes polymers from TMAH waste liquid, and

[0123] A processing apparatus described in any one of [E1] to [E4], further comprising a developer filter cleaning liquid chamber that stores the liquid passed by backflowing the PFAS-decomposed developer from the secondary side to the developer waste liquid filter.

[0124] [E6]

[0125] The above low molecular weight component processing unit further comprises a storage unit for storing the second solution and a PFAS collection unit having an inlet located downstream of the flow of the second solution along the liquid surface of the storage unit, a processing device described in any one of [E1] to [E5].

[0126] [E7]

[0127] The above low molecular weight component processing unit further comprises a microbubble generating unit that generates microbubbles in the second solution of the above reservoir, the processing device described in [E6].

[0128] [E8]

[0129] A treatment method for treating waste liquid discharged from a semiconductor manufacturing device,

[0130] With respect to the above waste liquid, a step of classifying it into a first solution having a high molecular weight component at a concentration greater than a predetermined level and a second solution having a low molecular weight component at a concentration greater than a predetermined level and not having a high molecular weight component at a concentration greater than a predetermined level, and

[0131] A treatment method comprising the step of increasing the concentration of the low molecular weight component with respect to the second solution classified in the above classification step.

[0132] [E9]

[0133] An inbound / outbound block for receiving and receiving carriers that accommodate multiple substrates, and

[0134] A machine processing group including a plurality of machine processing devices, and

[0135] A vacuum system processing group comprising a plurality of vacuum system processing devices and a vacuum system processing group located directly above the atmospheric processing group, and

[0136] A conveyor path for processing a substrate to the above-mentioned machine processing device, and

[0137] A vacuum processing conveyor path for transferring a substrate to the above-mentioned vacuum processing device is provided, and

[0138] The above conveyor path for atmospheric processing and the above conveyor path for vacuum processing are connected to the above input / output block, forming a substrate processing device.

[0139] [E10]

[0140] A substrate processing apparatus described in [E9], further comprising a mounting base arranged to cover the above-mentioned atmospheric processing group and supporting the above-mentioned vacuum processing group.

[0141] [E11]

[0142] A relay block connected to the above-mentioned conveyor path for atmospheric processing and the above-mentioned conveyor path for vacuum processing, and

[0143] A substrate processing apparatus described in [E9] or [E10], further comprising a bypass transport path for transferring a substrate between the incoming / outgoing block and the relay block above the vacuum system processing group.

[0144] [E12]

[0145] A substrate processing device described in any one of [E9] to [E11], wherein the vacuum exhaust line of the above vacuum processing device and the atmospheric exhaust line of the above atmospheric processing device are connected, and further comprising a vacuum exhaust switching unit that enables the interior of the above atmospheric processing device to be depressurized through the atmospheric exhaust line.

[0146] [E13]

[0147] The array line of the above vacuum system processing device and,

[0148] A heat-conducting member connected to the above-mentioned atmospheric processing device to enable heat conduction, and

[0149] A substrate processing device described in any one of [E9] to [E12], further comprising a heat conduction mechanism that transfers heat to the above-mentioned machine processing device by connecting the above-mentioned array line and the above-mentioned heat conduction member to each other.

[0150] [E14]

[0151] A substrate processing device described in any one of [E9] ~ [E13], and

[0152] A treatment system comprising a waste treatment device that processes effluent from the above-mentioned atmospheric treatment device and effluent from the above-mentioned vacuum treatment device. Explanation of the symbols

[0153] 10: PFAS Detoxification System 11 : Concentrator 12: Sulfuric acid treatment tank 13 : Cooler 14: Detoxification device 100: Semiconductor manufacturing equipment 111 : Lithography device 112 : Cleaning device 113 : Etching device 114: Tabernacle Equipment

Claims

Claim 1 A treatment device for treating waste liquid discharged from a semiconductor manufacturing device, comprising: a first filter for classifying the waste liquid into a first solution having a high molecular weight component at a concentration greater than a predetermined concentration and a second solution having a low molecular weight component at a concentration greater than a predetermined concentration and a low molecular weight component, and a low molecular weight component treatment unit for treating the second solution classified by the first filter to increase the concentration of the low molecular weight component. Claim 2 In claim 1, the low molecular weight component treatment unit comprises a circulating filtration mechanism for filtering the low molecular weight component by circulating the second solution, and a purification mechanism for removing PFAS from the filtrate that has passed through the circulating filtration mechanism. Claim 3 In claim 2, the circulating filtration mechanism comprises a plurality of second filters and a pass order switching mechanism for switching the serial pass order of the second solution in the plurality of second filters. Claim 4 A treatment device according to claim 1, wherein the first filter and the low molecular weight component treatment unit are provided separately for each type of solvent included in the waste liquid. Claim 5 A processing apparatus according to claim 1, further comprising a positive developing waste liquid treatment unit that divides the TMAH waste liquid into a PFAS concentrated developing liquid and a dePFAS developing liquid, a developing waste liquid filter that removes a polymer from the TMAH waste liquid, and a developing liquid filter cleaning liquid chamber that stores the liquid passed by backflowing the dePFAS developing liquid from the secondary side to the developing waste liquid filter. Claim 6 A treatment device according to claim 1, wherein the low molecular weight component treatment unit further comprises a storage unit for storing the second solution and a PFAS collection unit having an inlet located downstream of the flow of the second solution along the liquid surface of the storage unit. Claim 7 In claim 6, the low molecular weight component processing unit further comprises a microbubble generating unit that generates microbubbles in the second solution of the storage unit. Claim 8 A treatment method for treating waste liquid discharged from a semiconductor manufacturing apparatus, comprising: a step of classifying the waste liquid into a first solution having a high molecular weight component at a concentration greater than a predetermined concentration and a second solution having a low molecular weight component at a concentration greater than a predetermined concentration and not having a high molecular weight component at a predetermined concentration; and a step of performing a treatment to increase the concentration of the low molecular weight component on the second solution classified in the classification step.

Images