Display Device

Abstract

The display device of the present invention comprises: a substrate having a light-emitting region and a non-light-emitting region; a light-emitting diode provided in the light-emitting region on the upper part of the substrate and comprising a first electrode, a light-emitting layer, and a second electrode; a pixel defining film provided in the non-light-emitting region on the upper part of the substrate; a first light-blocking part on the upper part of the pixel defining film; and a second light-blocking part on the upper part of the first light-blocking part, wherein the pixel defining film has light-absorbing characteristics, and the first light-blocking part and the second light-blocking part transmit linearly polarized light in the direction of the transmission axis and reflect or absorb linearly polarized light in a direction perpendicular to the transmission axis. Therefore, external light reflection and stains caused by external light reflection can be minimized.

Description

Technology Field

[0001] The present invention relates to a display device, and in particular, to a display device capable of preventing deterioration of display quality and differences in visual perception caused by external light reflection. Background Technology

[0003] Display devices that display images on TVs, monitors, smartphones, tablet PCs, laptops, etc., are used in various methods and forms.

[0004] Display devices include a display panel having a plurality of light-emitting elements or liquid crystals for implementing an image and a transistor for controlling the operation of each light-emitting element or liquid crystal, so as to display an image to be displayed through the plurality of light-emitting elements or liquid crystals.

[0005] As a type of display device, the technology of light-emitting display devices, including light-emitting diodes, is developing rapidly. Light-emitting display devices can be classified into organic light-emitting display devices that use organic light-emitting materials and inorganic light-emitting display devices that use inorganic light-emitting materials.

[0006] To minimize external light reflection, light-emitting display devices include a polarizer on the display surface. Recently, various research and development efforts have been made to improve the reliability and quality of display devices. The problem to be solved

[0008] The embodiments of the present specification have the technical objective of providing a display device capable of realizing a sense of unity by having the reflectivity and reflective visual sensation of the display area and the non-display area identical.

[0009] The embodiments of the present specification have the technical objective of providing a display device capable of achieving structural simplification.

[0010] The embodiments of the present specification have the technical objective of providing a display device capable of minimizing stains caused by external light reflection while maintaining / improving brightness (preventing brightness from decreasing).

[0011] The embodiments of the present specification have the technical objective of providing a display device applicable to a foldable product in which flexibility can be improved and the display area is foldable.

[0012] The embodiments of the present specification have the technical objective of providing a display device in which a polarizing plate can be omitted.

[0013] The embodiments of the present specification have the technical objective of providing a low-reflection and low-power display device.

[0014] The problems of this specification are not limited to those mentioned above, and other technical problems may be inferred from the following embodiments. means of solving the problem

[0016] To achieve the above objective, the display device of the present invention comprises: a substrate having a light-emitting region and a non-light-emitting region; a light-emitting diode provided in the light-emitting region on the upper part of the substrate and comprising a first electrode, a light-emitting layer, and a second electrode; a pixel defining film provided in the non-light-emitting region on the upper part of the substrate; a first light-blocking part on the upper part of the pixel defining film; and a second light-blocking part on the upper part of the first light-blocking part, wherein the pixel defining film has light-absorbing characteristics, and the first light-blocking part and the second light-blocking part transmit linearly polarized light in the direction of the transmission axis and reflect or absorb linearly polarized light in a direction perpendicular to the transmission axis.

[0017] A display area including the light-emitting region and the non-light-emitting region is provided on the substrate, and a non-display area is provided on at least one side of the display area, and the pixel defining film, the first light blocking part, and the second light blocking part may be located in the non-light-emitting region and the non-display area.

[0018] The first light blocking member transmits linearly polarized light in the direction of the transmission axis and reflects linearly polarized light in a direction perpendicular to the transmission axis, and the second light blocking member transmits linearly polarized light in the direction perpendicular to the transmission axis and can absorb linearly polarized light in a direction perpendicular to the transmission axis.

[0019] The transmission axis direction of the first light blocking part and the transmission axis direction of the second light blocking part may coincide.

[0020] The display device of the present invention further includes a phase delay layer between the first light blocking part and the second light blocking part, and the transmission axis direction of the first light blocking part and the transmission axis direction of the second light blocking part may be arranged perpendicularly.

[0021] The display device of the present invention further includes a sensor electrode between the first light blocking part and the second light blocking part, and the phase delay layer may be located between the sensor electrode and the second light blocking part.

[0022] The above phase delay layer has a phase delay of λ / 2, and the optical axis of the above phase delay layer may be 45 degrees to the transmission axis of the first light blocking part and the second light blocking part.

[0023] The first light blocking part above may be a wire grid polarizer.

[0024] The first light-blocking member may be formed on the same layer with the same material as the second electrode of the light-emitting diode.

[0025] The second light-blocking part may include a reactive mesogen and a dichroic dye.

[0026] The display device of the present invention further includes a thin-film transistor electrically connected to the light-emitting diode between the substrate and the light-emitting diode, and the thin-film transistor may include a semiconductor layer made of an oxide semiconductor material.

[0027] The display device of the present invention further comprises, between the substrate and the light-emitting diode, a first transistor including a first semiconductor layer and a second transistor including a second semiconductor layer, which are electrically connected to the light-emitting diode, and the first semiconductor layer and the second semiconductor layer may be made of different materials.

[0028] One of the first semiconductor layer and the second semiconductor layer may be made of an oxide semiconductor material, and the other of the first semiconductor layer and the second semiconductor layer may be made of polycrystalline silicon.

[0029] The first semiconductor layer is made of an oxide semiconductor material, and the first transistor may be a driving transistor connected to the light-emitting diode.

[0030] The pixel definition film above may be a black bank.

[0031] The display device of the present invention may further include an encapsulation layer above the light-emitting diode and the pixel defining film; and a color filter layer located above the encapsulation layer and corresponding to the light-emitting diode.

[0032] The display device of the present invention further includes a cover window above the second light-blocking part, and the second light-blocking part may be located between the cover window and the color filter layer.

[0033] The display device of the present invention may further include the light-emitting diode and the encapsulation layer above the pixel definition film; and the sensor portion above the encapsulation layer. Effects of the invention

[0035] The embodiments of the present specification can provide a display device applicable to a foldable product in which the display area is folded, and flexibility can be improved by omitting a polarizer.

[0036] The embodiments of the present specification can provide a display device capable of realizing a sense of unity by having the same external light blocking configuration in the display area and the non-display area, so that the reflectivity and reflective visual perception of the display area and the non-display area are the same.

[0037] The embodiments of the present specification can provide a display device capable of structural simplification by providing the same external light blocking configuration in the display area and the non-display area.

[0038] The embodiments of the present specification can improve the reliability of the black bank by providing first and second light-blocking members with different light-blocking characteristics on top of the pixel defining film, thereby reducing the amount of black pigment in the pixel defining film.

[0039] In the embodiments of this specification, the manufacturing process can be simplified by forming the first light-blocking portion through the same process as the cathode electrode.

[0040] In the embodiments of this specification, a pixel defining film comprising a black material is disposed in the non-luminous area and non-display area of ​​the display area, thereby absorbing and blocking external light, so that external light reflection and stains caused by external light reflection can be minimized.

[0041] The embodiments of the present specification can provide a low-reflection display device by including a pixel defining film comprising a black-based material, and thereby have the advantage of low power consumption.

[0042] However, the effects obtainable in this specification are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art to which this specification belongs from the description below. Brief explanation of the drawing

[0044] FIG. 1 is a schematic cross-sectional view of a display device according to a first embodiment of the present invention. FIG. 2 is a schematic plan view of a display device according to a first embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of one subpixel of a display device according to the first embodiment of the present invention. FIG. 4 is a schematic perspective view of a first light-blocking member according to an embodiment of the present invention. FIG. 5 is a schematic diagram illustrating the configuration of a second light-blocking member according to an embodiment of the present invention. FIG. 6 is a schematic diagram illustrating the external light path of a display device according to a first embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. FIG. 8 is a schematic diagram illustrating the external light path of a display device according to a second embodiment of the present invention. FIG. 9 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention. FIG. 10 is a schematic exploded perspective view of a display module according to an embodiment of the present invention. FIG. 11 is a schematic cross-sectional view of a display module according to an embodiment of the present invention. FIG. 12 is a schematic plan view of a display module according to an embodiment of the present invention. Specific details for implementing the invention

[0045] The terms used in the embodiments of this specification have been selected to be as widely used and general as possible, taking into account their functions; however, these may vary depending on the intent of those skilled in the art, case law, the emergence of new technologies, etc. In specific cases, terms have been arbitrarily selected by the applicant, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Therefore, terms used in this specification should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0046] When a part of a specification is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0047] The expression "at least one of a, b, and c" as used throughout the specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'. The advantages and features of the present invention, and the methods for achieving them, will become clear from the embodiments described below in detail together with the accompanying drawings.

[0048] Shapes, areas, ratios, angles, numbers, etc. disclosed in the drawings for describing embodiments in this specification are exemplary, and therefore the embodiments of this specification are not limited to those depicted. In describing embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiment, such detailed description is omitted.

[0049] In cases where terms such as 'includes,' 'have,' or 'consists of' are used in this specification, other parts may be added. When a component is expressed in the singular, it includes cases where it includes the plural unless specifically stated otherwise. Furthermore, in interpreting the component, it is interpreted to include an error range even without separate explicit description.

[0050] In the case of a description of a positional relationship, for example, when the positional relationship between two parts is described using expressions such as "on," "on the upper side," "on the lower side," or "next to," one or more other parts may be located between the two parts. When an element or layer is referred to as being "on" another element or layer, it includes cases where another layer or element is placed directly on top of another element or in between.

[0051] Additionally, terms such as "first," "second," etc., are used to describe various components, but these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of the present invention.

[0052] The area, length, or thickness of each component described in the specification is illustrated for convenience of explanation and the present invention is not necessarily limited to the area and thickness of the illustrated components.

[0053] The features of each of the various embodiments of this specification may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or together in an associated relationship.

[0054] Furthermore, the terms described below are defined considering their functions in the implementation of this specification, and these may vary depending on the intentions or practices of the user or operator. Therefore, their definitions should be based on the content throughout this specification.

[0055] Unless otherwise stated, the transistor constituting the pixel circuit of the present specification may include at least one of an oxide thin film transistor (Oxide TFT), an amorphous silicon transistor (a-Si TFT), and a low temperature poly silicon (LTPS) transistor.

[0056] The following embodiments are described with reference to organic light-emitting display devices. However, the embodiments of the present invention are not limited to light-emitting display devices and may be applied to inorganic light-emitting display devices including inorganic light-emitting materials and micro-LED display devices. For example, the embodiments of the present invention may also be applied to quantum dot display devices. That is, the display device of the present invention may be a light-emitting display device including an organic light-emitting diode, a quantum dot light-emitting display device including a quantum dot light-emitting diode, or a micro-LED display device including a micro-LED.

[0057] Expressions such as "first," "second," and "third" are terms used to distinguish configurations by embodiment, and the embodiments are not limited to these terms. Therefore, it should be noted that even the same term may refer to different configurations depending on the embodiment.

[0059] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0060] FIG. 1 is a schematic cross-sectional view of a display device according to a first embodiment of the present invention.

[0061] As illustrated in FIG. 1, a display device (100A) according to the first embodiment of the present invention includes a substrate (102) having a display area (DA) for displaying an image and a non-display area (NDA) on at least one side of the display area (DA). A light-emitting diode (De) is provided in the display area (DA) on the upper part of the substrate (102), and an encapsulation layer (180), a sensor part (190), a color part (200), and a cover window (104) are provided on the upper part of the light-emitting diode (De).

[0062] Specifically, a plurality of subpixels (SP) are provided in the display area (DA). For example, the plurality of subpixels (SP) may include three subpixels that form a single pixel, namely, first, second, and third subpixels (SP1, SP2, SP3), and the first, second, and third subpixels (SP1, SP2, SP3) may be red, green, and blue subpixels, respectively. However, embodiments of the present invention are not limited thereto. In other embodiments, the number of subpixels (SP) that form a single pixel may vary.

[0063] Each subpixel (SP) includes a light-emitting region (EA) and a non-light-emitting region (NEA). A light-emitting diode (De) is provided corresponding to the light-emitting region (EA) on the upper part of the substrate (102). The light-emitting diode (De) includes a first electrode (162), a light-emitting layer (164), and a second electrode (166).

[0064] A pixel defining film (120) is provided in correspondence with a non-emissive region (NEA) on the upper part of the substrate (102). The pixel defining film (120) is located between the emissive regions (EA) of adjacent subpixels (SP). Additionally, the pixel defining film (120) is also provided in a non-display region (NDA). The pixel defining film (120) has the characteristic of absorbing light. Such a pixel defining film (120) may be a black bank.

[0065] A first light-blocking portion (170) is provided on the upper portion of the pixel defining film (120). The first light-blocking portion (170) is located in the non-emissive area (NEA) and non-display area (NDA). This first light-blocking portion (170) overlaps with the pixel defining film (120).

[0066] The first light blocking unit (170) selectively transmits light. That is, the first light blocking unit (170) transmits light parallel to the transmission axis and reflects light perpendicular to the transmission axis.

[0067] The first light blocking member (170) may be made of a metallic material. For example, the first light blocking member (170) may be made of aluminum (Al), but is not limited thereto.

[0068] This first light-blocking member (170) may be provided in the same layer as the second electrode (166) using the same material. At this time, the first light-blocking member (170) may be connected to the second electrode (166), and this will be explained in detail later.

[0069] Next, an encapsulation layer (180) is provided on the upper portion of the light-emitting diode (De) and the first light-blocking portion (170). The encapsulation layer (180) is located in the display area (DA) and the non-display area (NDA). The encapsulation layer (180) may have a multilayer structure including at least one inorganic layer and at least one organic layer.

[0070] For example, the encapsulation layer (180) may include first, second, and third encapsulation layers (182, 184, 186). In this case, the second encapsulation layer (184) is located between the first and third encapsulation layers (182, 186), and the first and third encapsulation layers (182, 186) are inorganic layers, and the second encapsulation layer (184) may be an organic layer.

[0071] A sensor unit (190) for detecting external input, such as touch, may be provided on the upper part of the encapsulation layer (180). The sensor unit (190) may include a sensor buffer layer (192), a sensor electrode (196), and a sensor passivation layer (198).

[0072] A sensor buffer layer (192) is provided on top of an encapsulation layer (180), a sensor electrode (196) is provided on top of the sensor buffer layer (192), and a sensor passivation layer (198) is provided on top of the sensor electrode (196). The sensor buffer layer (192) and the sensor passivation layer (198) are located in a display area (DA) and a non-display area (NDA), and the sensor electrode (196) is located in the display area (DA).

[0073] A color section (200) is provided on the upper part of the sensor section (190). The color section (200) includes a color buffer layer (210), a color filter layer (240), and a color protection layer (250). Additionally, the color section (200) may further include a second light blocking section (230).

[0074] A color buffer layer (210) is provided on the upper part of the sensor part (190), a color filter layer (240) and a second light blocking part (230) are provided on the upper part of the color buffer layer (210), and a color protection layer (250) is provided on the upper part of the color filter layer (240) and the second light blocking part (230). The color buffer layer (210) and the color protection layer (250) are located in the display area (DA) and the non-display area (NDA).

[0075] A color filter layer (240) is provided corresponding to the light-emitting region (EA) of each subpixel (SP). The color filter layer (240) may include first, second, and third color filters corresponding to the first, second, and third subpixels (SP1, SP2, SP3), respectively. For example, the first, second, and third color filters may be red, green, and blue color filters, respectively.

[0076] The second light blocking section (230) is provided corresponding to the non-luminous area (NEA) of the display area (DA). The second light blocking section (230) may overlap with the color filter layer (240). Additionally, the second light blocking section (230) is also provided in the non-display area (NDA). This second light blocking section (230) overlaps with the pixel defining film (120) and the first light blocking section (170).

[0077] The second light blocking unit (230) selectively transmits light. That is, the second light blocking unit (230) transmits light parallel to the transmission axis and absorbs light perpendicular to the transmission axis.

[0078] Here, the transmission axis of the second light blocking part (230) may coincide with the transmission axis of the first light blocking part (170). That is, the transmission axis of the second light blocking part (230) may have the same direction as the transmission axis of the first light blocking part (170) and may be parallel.

[0079] The second light blocking unit (230) may include a reactive mesogen (RM) as a host and a dichroic dye as a guest. The dichroic dye is aligned in a specific direction by the reactive mesogen, so that light parallel to the alignment direction is absorbed and light perpendicular to the alignment direction is transmitted.

[0080] A cover window (104) is provided on the upper part of the color section (200). The cover window (104) protects the members placed below from external impact, moisture, oxygen, or foreign matter. This cover window (104) may be made of glass or a transparent film.

[0081] In this way, in the display device (100A) according to the first embodiment of the present invention, by providing a color filter layer (240) on top of a light-emitting diode (De) provided in a light-emitting region (EA) of a display area (DA), the reflective light and / or viewing angle can be improved.

[0082] In addition, in the display device (100A) according to the first embodiment of the present invention, by providing a pixel defining film (120) with light absorption characteristics, a first light blocking part (170), and a second light blocking part (230) in the non-luminous area (NEA) and non-display area (NDA) of the display area (DA), external light can be prevented from being reflected and output. Accordingly, the image quality can be improved by minimizing stains caused by external light reflection.

[0083] In addition, since the display area (DA) and the non-display area (NDA) are identically equipped with a configuration for blocking external light reflection, the reflectivity characteristics and reflective visual characteristics are identical in the display area (DA) and the non-display area (NDA), and a sense of unity can be achieved.

[0085] As previously mentioned, the first light blocking part (170) of the display device (100A) according to the first embodiment of the present invention may be provided in the same layer with the same material as the second electrode (166) of the light-emitting diode (De), and this will be explained with reference to FIG. 2.

[0086] FIG. 2 is a schematic plan view of a display device according to a first embodiment of the present invention. FIG. 2 illustrates various shapes and arrangements of a light-emitting area (EA) of a plurality of subpixels corresponding to one pixel and a first light-blocking part (170).

[0087] Here, FIG. 2(a) illustrates the light-emitting region (EA) of four subpixels, FIG. 2(b) to FIG. 2(d) illustrate the light-emitting region (EA) of three subpixels, and the shape and / or area of ​​the light-emitting region (EA) of multiple subpixels may differ from each other. However, embodiments of the present invention are not limited thereto, and in other embodiments, the shape and / or area of ​​the light-emitting region (EA) of multiple subpixels may be the same.

[0088] As shown in FIG. 2(a), the light-emitting regions (EA) of the four subpixels may substantially have a square or elliptical shape and may be spaced apart in the first direction (X) and the second direction (Y) to form a cross shape.

[0089] As illustrated in FIG. 2(b) and FIG. 2(c), the light-emitting regions (EA) of the three subpixels may all have a square shape or all have a circular shape, and the light-emitting regions (EA) of two subpixels may be spaced apart in the second direction (Y), and the light-emitting region (EA) of the remaining one subpixel may be spaced apart from the light-emitting regions (EA) of the two subpixels in the first direction (X).

[0090] As shown in FIG. 2(d), the light-emitting regions (EA) of the three subpixels can all have a rectangular shape and can be spaced apart in the first direction (X).

[0091] As illustrated in FIGS. 2(a) to 2(d), a second electrode (166) is provided in each light-emitting region (EA), and a first light-blocking part (170) is provided between adjacent light-emitting regions (EA), that is, in the non-light-emitting region (NEA).

[0092] The first light blocking member (170) may include a plurality of patterns spaced apart in the first direction (X) and extended in the second direction (Y). The first light blocking member (170) selectively transmits light, and the transmission axis of the first light blocking member (170) is perpendicular to the extension direction of the pattern, i.e., the second direction (Y). Accordingly, the transmission axis of the first light blocking member (170) may be parallel to the first direction (X). However, embodiments of the present invention are not limited thereto. In another embodiment, the first light blocking member (170) may include a plurality of patterns extended in the first direction (X) and spaced apart in the second direction (Y).

[0093] This first light-blocking portion (170) can be formed on the same layer with the same material as the second electrode (166). At this time, a part of the first light-blocking portion (170) can be formed integrally by connecting it to the second electrode (166) of the light-emitting region (EA).

[0094] Meanwhile, the second light blocking part (230) of FIG. 1 can be placed in a non-light-emitting area (NEA) between adjacent light-emitting areas (EA), substantially the same as the first light blocking part (170).

[0096] The subpixel configuration of the display device (100A) according to the first embodiment of the present invention will be explained in more detail with reference to FIG. 3.

[0097] FIG. 3 is a schematic cross-sectional view of one subpixel of a display device according to the first embodiment of the present invention.

[0098] As illustrated in FIG. 3, the subpixel (SP) of the display device (100A) according to the first embodiment of the present invention may include a first transistor (T1), a second transistor (T2), a storage capacitor (Cst), a light-emitting diode (De), an encapsulation layer (180), a sensor part (190), and a color part (200) on a substrate (102) in which a light-emitting region (EA) and a non-light-emitting region (NEA) are defined. Additionally, a first light-blocking layer (131) may be provided below the first transistor (T1), and a second light-blocking layer (141) may be provided below the second transistor (T2).

[0099] The first transistor (T1) may include a first active layer (132), a first gate electrode (133), a first source electrode (134), and a first drain electrode (135), and the second transistor (T2) may include a second active layer (142), a second gate electrode (143), a second source electrode (144), and a second drain electrode (145), and the first active layer (132) and the second active layer (142) may be made of different materials.

[0100] The first transistor (T1) is an oxide semiconductor thin film transistor, and the second transistor (T2) may be a low temperature polycrystalline silicon thin film transistor.

[0101] Specifically, the substrate (102) may be a flexible substrate. The substrate (102) may have a multilayer structure and, for example, may include first, second, and third substrate layers.

[0102] The first and third substrate layers may be made of plastics with relatively high thermal stability. For example, the first and third substrate layers may be made of polyimide, polyethersulfone, polyetherketone, polyamide, or polybenzimidazole, but are not limited thereto.

[0103] A second substrate layer can be inserted between the first and third substrate layers to increase the stiffness of the substrate (102) and increase moisture barrier properties. This second substrate layer may be an inorganic layer. For example, the second substrate layer may be made of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx). Alternatively, the second substrate layer may be made of a metallic material such as copper (Cu), aluminum (Al), or stainless steel (SUS).

[0104] However, embodiments of the present invention are not limited thereto. In other embodiments, the substrate (102) may be a glass substrate and may have a single-layer structure.

[0105] A second light-blocking layer (141) is provided on the upper surface of the substrate (102). The second light-blocking layer (141) is made of a conductive material such as metal and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The second light-blocking layer (141) may have a single layer or a multilayer structure.

[0106] Although not shown, a buffer layer may be provided between the substrate (102) and the second light-blocking layer (141). The buffer layer may be composed of a single layer or multiple layers of an inorganic insulating material.

[0107] A first buffer layer (112) made of an inorganic insulating material is provided on the upper portion of the second light-blocking layer (141). For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0108] A second active layer (142) is provided on the upper portion of the first buffer layer (112). The second active layer (142) overlaps with the second light-blocking layer (141), and the second light-blocking layer (141) blocks light incident on the second active layer (142) to prevent the second active layer (142) from deteriorating due to light.

[0109] The second active layer (142) may include a central channel region (142a) and source regions (142s) and drain regions (142d) on both sides of the channel region (142a). This second active layer (142) may be made of a polycrystalline semiconductor material, namely polycrystalline silicon, and the source and drain regions (142s, 142d) of the second active layer (142) may be doped with impurities.

[0110] A first gate insulating layer (113) is provided on the upper portion of the second active layer (142). The first gate insulating layer (113) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0111] A second gate electrode (143) is provided on the upper portion of the first gate insulating layer (113). The second gate electrode (143) is made of a conductive material such as metal and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The second gate electrode (143) may have a single-layer or multi-layer structure.

[0112] The second gate electrode (143) is positioned corresponding to the center of the second active layer (142) and overlaps with the channel region (142a) of the second active layer (142).

[0113] Additionally, a first capacitor electrode (151) is provided on the upper part of the first gate insulating layer (113). This first capacitor electrode (151) is formed on the same layer with the same material as the second gate electrode (143).

[0114] A first interlayer insulating layer (114) is provided on the upper portion of the second gate electrode (143) and the first capacitor electrode (151). The first interlayer insulating layer (114) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0115] A second buffer layer (115) is provided on top of the first interlayer insulating layer (114). The second buffer layer (115) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0116] A first light-blocking layer (131) is provided on the upper portion of the second buffer layer (115). The first light-blocking layer (131) is positioned spaced apart from the second light-blocking layer (141), the first capacitor electrode (151), and the second transistor (T2). The first light-blocking layer (131) is made of a conductive material such as metal and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The first light-blocking layer (131) may have a single layer or a multilayer structure.

[0117] Additionally, a second capacitor electrode (152) is provided on the upper part of the second buffer layer (115). This second capacitor electrode (152) is formed in the same layer with the same material as the first light-blocking layer (131). The second capacitor electrode (152) overlaps with the first capacitor electrode (151) to form a storage capacitor (Cst).

[0118] A third buffer layer (116) is provided on the upper portion of the first light-blocking layer (131) and the second capacitor electrode (152). The third buffer layer (116) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0119] A first active layer (132) is provided on the upper portion of the third buffer layer (116). The first active layer (132) overlaps with the first light-blocking layer (131), and the first light-blocking layer (131) blocks light incident on the first active layer (132) to prevent the first active layer (132) from deteriorating due to light.

[0120] The first active layer (132) may include a central channel region (132a) and source regions (132s) and drain regions (132d) on both sides of the channel region (132a). For example, the first active layer (132) may be made of an oxide semiconductor material such as indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium-tin-zinc oxide (ITZO), and indium-aluminum-zinc oxide (IAZO).

[0121] The source region (132s) and drain region (132d) may be doped with impurities. However, embodiments of the present invention are not limited thereto. Alternatively, the source region (132s) and drain region (132d) may not be doped with impurities.

[0122] A second gate insulating layer (117) made of an inorganic insulating material is provided on the upper portion of the first active layer (132). The second gate insulating layer (117) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0123] A first gate electrode (133) is provided on the upper portion of the second gate insulating layer (117). The first gate electrode (133) is made of a conductive material such as metal and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The first gate electrode (133) may have a single-layer or multi-layer structure.

[0124] The first gate electrode (133) is positioned corresponding to the center of the first active layer (132) and overlaps with the channel region (132a) of the first active layer (132).

[0125] A second interlayer insulating layer (118) made of an inorganic insulating material is provided on the upper portion of the first gate electrode (133). The second interlayer insulating layer (118) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0126] On the upper part of the second interlayer insulating layer (118), a first source and first drain electrode (134, 135) and a second source and second drain electrode (144, 145) are provided. The first source and first drain electrode (134, 135) and the second source and second drain electrode (144, 145) are made of a conductive material such as metal, and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The first source and first drain electrode (134, 135) and the second source and second drain electrode (144, 145) may have a single-layer or multi-layer structure.

[0127] The first source and first drain electrodes (134, 135) are spaced apart from the first gate electrode (133) and contact the source and drain regions (132s, 132d) of the first active layer (132) respectively through contact holes provided in the second gate insulating layer (117) and the second interlayer insulating layer (118).

[0128] Additionally, the first drain electrode (135) is extended to overlap with the first and second capacitor electrodes (151, 152) and can be electrically connected to the second capacitor electrode (152) by contacting it through a contact hole provided in the third buffer layer (116), the second gate insulating layer (117), and the second interlayer insulating layer (118).

[0129] Meanwhile, the second source and second drain electrodes (144, 145) are spaced apart from the second gate electrode (143) and are respectively in contact with the source and drain regions (142s, 142d) of the second active layer (142) through contact holes provided in the first gate insulating layer (113), the first interlayer insulating layer (114), the second buffer layer (115), the third buffer layer (116), the second gate insulating layer (117), and the second interlayer insulating layer (118).

[0130] The first source and first drain electrodes (134, 135) together with the first active layer (132) and the first gate electrode (133) form a first transistor (T1), and the second source and second drain electrodes (144, 145) together with the second active layer (142) and the second gate electrode (143) form a second transistor (T2). Here, the first transistor (T1) may be a driving transistor and / or a light-emitting transistor, and the second transistor (T2) may be a switching transistor and / or a sensing transistor and may be electrically connected to the first transistor (T1).

[0131] The second drain electrode (145) of the second transistor (T2) can be connected to the first gate electrode (133) of the first transistor (T1). Here, the second transistor (T2) is switched according to a scan signal transmitted through the gate wiring, so that a data signal input to the second source electrode (144) through the data wiring can be transmitted to the first gate electrode (133) through the second drain electrode (145). Additionally, the first transistor (T1) is switched according to the data signal so that a power supply voltage input to the first source electrode (134) can be transmitted to the light-emitting diode (De) through the first drain electrode (135).

[0132] Thus, the display device (100A) according to the first embodiment of the present invention includes a first transistor (T1) and a second transistor (T2) having different configurations. Here, the first transistor (T1) may be an oxide semiconductor thin-film transistor using an oxide semiconductor material as the first active layer (132), and the oxide semiconductor thin-film transistor has an excellent leakage current blocking effect and is relatively inexpensive to manufacture. On the other hand, the second transistor (T2) may be a low-temperature polycrystalline silicon thin-film transistor using a polycrystalline semiconductor material as the second active layer (142), and the low-temperature polycrystalline silicon thin-film transistor has a fast operating speed and excellent reliability.

[0133] Accordingly, the display device (100A) according to the first embodiment of the present invention is equipped with both an oxide semiconductor thin-film transistor and a low-temperature polycrystalline silicon thin-film transistor, and by selectively applying them according to operating characteristics, the driving characteristics of the display device can be improved.

[0134] One or more switching transistors having the same configuration as the first transistor (T1) and / or the second transistor (T2) may be further provided on the substrate (102). However, embodiments of the present invention are not limited thereto. In other embodiments, the driving and / or light-emitting transistor may have the same configuration as the second transistor (T2), and the switching and / or sensing transistor may have the same configuration as the first transistor (T1).

[0135] In contrast, the second transistor (T2) may be a transistor of a gate driving unit provided on the substrate (102), and the gate driving unit may further include a transistor having the same configuration as the first transistor (T1).

[0136] Next, a flattening layer (119) is provided on the upper portion of the first source and first drain electrodes (134, 135) and the second source and second drain electrodes (144, 145). Although not illustrated, an inorganic layer made of an inorganic insulating material may be further provided on the lower portion of the flattening layer (119).

[0137] The flattening layer (119) eliminates the step difference caused by the lower film and has a substantially flat upper surface. The flattening layer (119) may be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacryl) or benzocyclobutene (BCB).

[0138] The flattening layer (119) may have a multilayer structure. For example, the flattening layer (119) may include first, second, and third flattening layers (119a, 119b, 119c).

[0139] Specifically, a first flattening layer (119a) is provided on top of the first source and first drain electrodes (134, 135) and the second source and second drain electrodes (144, 145).

[0140] A connecting electrode (154) is provided on the upper part of the first flattening layer (119a). The connecting electrode (154) overlaps with the first drain electrode (135) and contacts the first drain electrode (135) through a contact hole provided in the first flattening layer (119a).

[0141] The connecting electrode (154) is made of a conductive material such as metal and may be made of at least one of aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), chromium (Cr), nickel (Ni), tungsten (W), or an alloy thereof. The connecting electrode (154) may have a single layer or a multilayer structure.

[0142] A second flattening layer (119b) is provided on the upper part of the connecting electrode (154), and a third flattening layer (119c) is provided on the upper part of the second flattening layer (119b).

[0143] In a display device including a light-emitting diode (De), the flatness of the first electrode (162) of the light-emitting diode (De) may be reduced due to a step difference caused by an electrode or wiring provided at the bottom of the light-emitting diode (De), which may cause problems such as a reduction in the lifespan of the light-emitting diode (De). However, in the display device (100A) according to the first embodiment of the present invention, a flattening layer (119) with a multilayer structure is provided at the bottom of the light-emitting diode (De), so problems caused by the step difference are prevented.

[0144] Here, the flattening layer (119) has been described as having a triple-layer structure including first, second, and third flattening layers (119a, 119b, 119c), but embodiments of the present invention are not limited thereto. In other embodiments, the connecting electrode (154) and the first flattening layer (119a) are omitted, so the flattening layer (119) may have a double-layer structure. Also, in other embodiments, additional flattening layers are provided, so the flattening layer (119) may have a multi-layer structure of four or more layers.

[0145] Next, a first electrode (162) comprising a conductive material with a relatively high work function is provided on the upper portion of the third flattening layer (119c). The first electrode (162) contacts a connecting electrode (154) through a contact hole provided in the second and third flattening layers (119b, 119c). Accordingly, the first electrode (162) is electrically connected to the first drain electrode (135) of the first transistor (T1) through the connecting electrode (154). Additionally, the first electrode (162) is electrically connected to the second capacitor electrode (152) of the storage capacitor (Cst) through the connecting electrode (154).

[0146] Alternatively, if the connecting electrode (154) and the first flattening layer (119a) are omitted, the first electrode (162) may come into direct contact with the first drain electrode (135) through contact holes provided in the second and third flattening layers (119b, 119c).

[0147] For example, the first electrode (162) may include a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or titanium (Ti), but is not limited thereto.

[0148] Meanwhile, the first electrode (162) may have a multilayer structure including a material having a relatively high reflectivity. For example, the first electrode (162) may be formed with a structure having a relatively high reflectivity, such as a triple layer structure of titanium, aluminum, and titanium (Ti / Al / Ti), a triple layer structure of indium-tin-oxide, aluminum, and indium-tin-oxide (ITO / Al / ITO), a triple layer structure of indium-tin-oxide, silver, and indium-tin-oxide (ITO / Ag / ITO), or a triple layer structure of indium-tin-oxide, silver alloy, and indium-tin-oxide (ITO / Ag Alloy / ITO). Here, the silver alloy may be a silver-palladium-copper alloy (Ag-Pd-Cu: APC).

[0149] A pixel defining film (120) made of an organic insulating material is provided on the upper part of the first electrode (162). The pixel defining film (120) overlaps with the edge of the first electrode (162), covers the edge of the first electrode (162), and exposes the center of the first electrode (162). This pixel defining film (120) covers the contact holes provided in the second and third flattening layers (119b, 119c).

[0150] The pixel defining film (120) may have an opening that exposes the center of the first electrode (162). The pixel defining film (120) is positioned corresponding to a non-luminous region (NEA), and the opening of the pixel defining film (120) corresponds to a luminous region (EA).

[0151] The pixel defining film (120) has light absorption properties. The pixel defining film (120) may be a black bank. The pixel defining film (120) may include black particles (light-absorbing particles) dispersed in an organic material (binder). For example, the organic material may be one of a photosensitive acrylic polymer (photoacrylic), benzocyclobutene, or polyimide, and the light-absorbing particles may be one of carbon black, carbon nanotubes (CNT), or graphene.

[0152] On the upper part of the pixel definition film (120), a first spacer (123) having a substantially positive taper shape and a second spacer (124) having a reverse taper shape are provided.

[0153] The first spacer (123) supports a metal mask used when forming the light-emitting layer (164) later, and the second spacer (124) separates the light-emitting layer (164) formed later and the second electrode (166) to block lateral leakage current between adjacent subpixels (SP).

[0154] The first and second spacers (123, 124) may be made of a single layer or multiple layers of an organic insulating material such as a photosensitive acrylic polymer (photoacryl) or benzocyclobutene (BCB). At least one of the first and second spacers (123, 124) may be omitted.

[0155] Meanwhile, an auxiliary defining film (122) may be provided between the pixel defining film (120) and the first and second spacers (123, 124). The auxiliary defining film (122) may have substantially the same shape as the pixel defining film (120). That is, the auxiliary defining film (122) may have an opening that exposes the center of the first electrode (162) and may be positioned corresponding to the non-luminous region (NEA).

[0156] The auxiliary definition membrane (122) may be made of the same material as the first and second spacers (123, 124). In this case, the auxiliary definition membrane (122) may be connected to the first spacer (123) and formed integrally.

[0157] Here, the auxiliary definition film (122) may have characteristics different from the pixel definition film (120), namely, light transmission characteristics. This auxiliary definition film (122) may be made of the same organic material as the binder of the pixel definition film (120) and may not contain light-absorbing particles.

[0158] The auxiliary definition film (122) is intended to facilitate the patterning of the pixel definition film (120) having light absorption characteristics and may be omitted. Accordingly, the first and second spacers (123, 124) may be formed directly on the upper surface of the pixel definition film (120).

[0159] A light-emitting layer (164) is provided on the upper portion of the first electrode (162) exposed through the openings of the pixel defining film (120) and the auxiliary defining film (122). The light-emitting layer (164) is also provided on the upper portion of the auxiliary defining film (122) and the first and second spacers (123, 124).

[0160] The light-emitting layer (164) may include at least one hole auxiliary layer, at least one light-emitting material layer, and at least one electron auxiliary layer.

[0161] The light-emitting material layer may include at least one of red, green, or blue light-emitting materials. Such light-emitting materials may be organic light-emitting materials, such as phosphorescent compounds or fluorescent compounds, or inorganic light-emitting materials, such as quantum dots.

[0162] The hole assist layer may include at least one of a hole injection layer (HIL) and a hole transporting layer (HTL), and the electron assist layer may include at least one of an electron injection layer (EIL) and an electron transporting layer (ETL).

[0163] The light-emitting layer (164) emits white light and can be located substantially over the entire display area (DA). In this case, the light-emitting layer (164) may have a stacked structure in which a plurality of light-emitting units emitting light of different colors are stacked. Each light-emitting unit may include at least one hole-assisted layer, at least one light-emitting material layer, and at least one electron-assisted layer.

[0164] For example, the light-emitting layer (164) may have a stacked structure in which two or more light-emitting units emitting light of different colors are stacked, and a charge generation layer (CGL) may be provided between the two light-emitting units.

[0165] However, embodiments of the present invention are not limited thereto. In other embodiments, the light-emitting layer (164) is provided separately for each subpixel (SP) and may emit one of red, green, or blue light.

[0166] The light-emitting layer (164) can be separated by the second spacer (124). That is, the light-emitting layer (164) above the auxiliary definition film (122) and the light-emitting layer (164) above the second spacer (124) are separated and not connected.

[0167] A second electrode (166) made of a conductive material with a relatively low work function is provided on the upper part of the light-emitting layer (164). The second electrode (166) is located in the light-emitting region (EA).

[0168] The second electrode (166) may be formed of aluminum (Al), magnesium (Mg), silver (Ag), or an alloy thereof. In this case, the second electrode (166) may have a relatively thin thickness so that light from the light-emitting layer (164) can be transmitted. For example, the second electrode (166) may have a thickness of about 5 nm to 10 nm, but is not limited thereto.

[0169] In contrast, the second electrode (166) may be formed of a transparent conductive material such as indium-gallium-oxide (IGO) or IZO.

[0170] The first electrode (162), the light-emitting layer (164), and the second electrode (166) form a light-emitting diode (De). Here, the first electrode (162) may function as an anode electrode, and the second electrode (166) may function as a cathode electrode. However, embodiments of the present invention are not limited thereto. In other embodiments, the first electrode (162) may function as a cathode electrode, and the second electrode (166) may function as an anode electrode.

[0171] The light emitted from the light-emitting layer (164) of the light-emitting diode (De) is output to the outside through the second electrode (166). The display device (100A) according to the first embodiment of the present invention is a top-emitting type display device.

[0172] Meanwhile, a first light blocking part (170) is provided on the upper part of the light-emitting layer (164) of the non-light-emitting region (NEA). The first light blocking part (170) overlaps with the pixel defining film (120), the auxiliary defining film (122), and the first and second spacers (123, 124).

[0173] The configuration of the first light blocking member (170) is described in more detail with reference to FIG. 4. FIG. 4 is a schematic perspective view of the first light blocking member according to an embodiment of the present invention, and for convenience, only the substrate and the configuration of the first light blocking member are shown.

[0174] As illustrated in FIG. 4, the first light blocking unit (170) may be a wire grid polarizer that selectively reflects or transmits light to produce single polarization by exciting metal electrons on the grid in one direction.

[0175] Specifically, the first light blocking unit (170) may be composed of a plurality of wire grids arranged on the substrate (102) spaced apart in a first direction (X) and extended in a second direction (Y). This first light blocking unit (170) transmits linearly polarized light (L1) in the first direction (X) that vibrates perpendicularly to the wire grid, and reflects linearly polarized light (L2) in the second direction (Y) that vibrates parallel to the wire grid.

[0176] However, the direction of the wire grid is not limited thereto. In another embodiment, the wire grid may be extended in a first direction (X) and spaced apart in a second direction (Y). In this case, the first light blocking member (170) reflects linear polarization (L1) in the first direction (X) and transmits linear polarization (L2) in the second direction (Y) that vibrates parallel to the wire grid. Alternatively, in another embodiment, the wire grid may be extended in a direction intersecting the first and second directions (X, Y) and spaced apart in a direction perpendicular thereto.

[0177] To ensure a degree of polarization equivalent to that of a conventional polarizer, the pitch (P) of the wire grid is preferably less than or equal to λ / 2, and considering the wavelength range of visible light from 380 nm to 780 nm, the pitch (P) of the wire grid may be 200 nm or less, preferably 150 nm to 170 nm.

[0178] At this time, the pattern width (W) of the wire grid is preferably equal to or smaller than half of the pitch (P), for example, it may be 0.45 to 0.5 of the pitch (P). In addition, the thickness (T) of the wire grid is preferably 50 nm or less.

[0179] As previously mentioned, the first light-blocking portion (170) may be formed on the same layer with the same material as the second electrode (166). At this time, the thickness (T) of the wire grid is the same as the thickness of the second electrode (166), and may be, for example, 5 nm to 10 nm.

[0180] These first light-blocking portions (170) and second electrodes (166) can be formed by depositing a metal material on the upper surface of a substrate (102) to form a metal layer, and selectively removing the metal layer of a non-emissive region (NEA) through a photolithography process. At this time, a portion of the first light-blocking portion (170) may be connected to the second electrode (166) to form an integral unit.

[0181] Referring again to FIG. 3, an encapsulation layer (180) is provided on the upper portion of the second electrode (166) and the first light blocking portion (170). The encapsulation layer (180) protects the light-emitting diode (De) from external moisture or oxygen.

[0182] These encapsulation layers (180) have a stacked structure of first, second, and third encapsulation layers (182, 184, 186), and the second encapsulation layer (184) may be located between the first encapsulation layer (182) and the third encapsulation layer (186). The first and third encapsulation layers (182, 186) may be made of an inorganic insulating material, and the second encapsulation layer (184) may be made of an organic insulating material. Here, the second encapsulation layer (184) may be a film that covers foreign substances generated during the manufacturing process.

[0183] For example, the first and third encapsulation layers (182, 186) may be made of inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON), and the second encapsulation layer (184) may be made of organic insulating materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0184] Meanwhile, although not illustrated, a capping layer may be further provided between the second electrode (166) and the encapsulation layer (180). This capping layer may be formed of an insulating material having a relatively high refractive index, and the wavelength of light traveling along the capping layer is amplified by surface plasma resonance, thereby increasing the intensity of the peak and improving light efficiency. For example, the capping layer may be formed in the form of a single film of an organic or inorganic layer, or a stacked film of an organic layer and an inorganic layer.

[0185] Next, a sensor unit (190) for detecting external input, such as touch, may be provided on the upper part of the encapsulation layer (180). The sensor unit (190) may include a first sensor insulating layer (192), a bridge electrode (193), a second sensor insulating layer (194), a third sensor insulating layer (195), a sensor electrode (196), and a fourth sensor insulating layer (198).

[0186] Specifically, a first sensor insulating layer (192), which is a sensor buffer layer, is provided on top of the encapsulation layer (180). The first sensor insulating layer (192) may be composed of a single layer or multiple layers of an inorganic insulating material, and the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0187] A bridge electrode (193) made of a conductive material is provided on the upper part of the first sensor insulating layer (192). The bridge electrode (193) is located in a non-emissive region (NEA), overlaps with the pixel defining film (120), and can be spaced apart from the light-emitting diode (De).

[0188] On the upper part of the bridge electrode (193), a second interlayer insulating layer (194), which is an auxiliary sensor buffer layer, and a third sensor insulating layer (195), which is an interlayer insulating layer, are provided. The second sensor insulating layer (195) is formed from an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON), and the third sensor insulating layer (195) can be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic).

[0189] A sensor electrode (196) made of a conductive material is provided on the upper part of the third sensor insulating layer (195). The sensor electrode (196) may be provided in multiple numbers and may selectively contact the bridge electrode (193) through contact holes provided in the second and third sensor insulating layers (194, 195).

[0190] Accordingly, the sensor electrode (196) can be selectively connected to the first direction (X) and / or the second direction (Y) through the bridge electrode (193) to form a first sensing wire that substantially extends to the first direction (X) and a second sensing wire that substantially extends to the second direction (Y).

[0191] A fourth sensor insulating layer (198), which is a sensor passivation layer, is provided on the upper portion of the sensor electrode (196). The fourth sensor insulating layer (198) may be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic).

[0192] In this way, the display device (100A) according to the first embodiment of the present invention is provided with a sensor unit (200) on top of a light-emitting diode (De) to detect a user's touch input and perform a corresponding operation.

[0193] A color section (200) is provided on the upper part of the sensor section (190). The color section (200) includes a color buffer layer (210), a color filter layer (240), and a color protection layer (250). Additionally, the color section (200) may further include an alignment layer (220) and a second light blocking section (230).

[0194] Specifically, a color buffer layer (210) is provided on the upper portion of the fourth sensor insulating layer (198) of the sensor portion (190). The color buffer layer (210) may be composed of a single layer or multiple layers of an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON).

[0195] A second light blocking member (230) is provided in the non-emissive region (NEA) above the color buffer layer (210). The second light blocking member (230) implements polarization by arranging a dichroic dye having an absorption spectrum in the visible light region using a reactive mesogen aligned in a specific direction.

[0196] The second light-blocking section (230) has an opening corresponding to the light-emitting region (EA). The opening of the second light-blocking section (230) may have substantially the same size as the opening of the pixel defining film (120). That is, the area of ​​the first light-blocking section (230) and the pixel defining film (120) may be substantially the same. However, embodiments of the present invention are not limited thereto, and the opening of the second light-blocking section (230) may have a different size from the opening of the pixel defining film (120). For example, to increase the viewing angle, the opening of the second light-blocking section (230) may be larger than the opening of the pixel defining film (120).

[0197] At this time, the higher the degree of alignment, the higher the degree of polarization, and to increase the degree of alignment, an alignment film (220) may be further provided at the bottom of the second light blocking part (230). The alignment film (220) has substantially the same shape and area as the second light blocking part (230).

[0198] This alignment layer (220) can be formed by applying an organic insulating material, such as polyimide, on top of a color buffer layer (210) and aligning the surface in a certain direction through a photo-alignment method using ultraviolet (UV) light. Here, the ultraviolet light can be irradiated only on the non-emissive region (NEA).

[0199] Next, a mixture of reactive mesogen and dichroic dye is formed on the upper part of the alignment layer (220), and ultraviolet light is irradiated onto the non-luminous region (NEA) to strip and remove the alignment layer (220) and the mixture from the luminous region (EA) that is not exposed to ultraviolet light, thereby forming the alignment layer (220) and the second light-blocking part (230) in the non-luminous region (NBEA).

[0200] The configuration of the second light-blocking member (230) is described in more detail with reference to FIG. 5. FIG. 5 is a schematic diagram illustrating the configuration of the second light-blocking member according to an embodiment of the present invention, showing the arrangement structure of the reactive mesogen and dichroic dye before and after polymerization.

[0201] As illustrated in FIG. 5, the second light-blocking part (230) according to an embodiment of the present invention includes a reactive mesogen (232) and a dichroic dye (234).

[0202] The reactive mesogen (232) is a monomer molecule that has a liquid crystal phase and includes a mesogen capable of expressing liquid crystal properties and a polymerizable terminal functional group, and is used as an alignment host.

[0203] The reactive mesogen (232) may have a smectic phase with a relatively high degree of alignment. However, embodiments of the present invention are not limited thereto, and in other embodiments, the reactive mesogen (232) may have a nematic phase.

[0204] A dichroic dye (234) having liquid crystallization is synthesized and mixed with the reactive mesogen (232). The dichroic dye (234) may include a plurality of dichroic dyes that absorb light of different wavelengths. For example, the dichroic dye (234) may include two or more of yellow, cyan, and magenta dichroic dyes. However, embodiments of the present invention are not limited thereto.

[0205] Next, when the reactive mesogen (232) is polymerized and cured by irradiating ultraviolet (UV) light, the dichroic dye (234) is aligned in the same direction as the reactive mesogen (232) due to its own liquid crystal properties.

[0206] Accordingly, the dichroic dye (234) absorbs light parallel to the arrangement direction and transmits light perpendicular to the arrangement direction, and the absorption axis of the second light blocking part (230) is parallel to the arrangement direction of the dichroic dye (232), and the transmission axis is perpendicular to the arrangement direction of the dichroic dye (232).

[0207] Referring again to FIG. 3, a color filter layer (240) is provided in the light-emitting region (EA) above the color buffer layer (210). The color filter layer (240) may also be partially located in the non-light-emitting region (NEA) and may overlap and cover a part of the second light-blocking portion (230).

[0208] A color protective layer (250) is provided on the upper portion of the second light-blocking portion (230) and the color filter layer (240). The color protective layer (250) covers and protects the color filter layer (240) and the second light-blocking portion (230). The color protective layer (250) may be formed from an organic insulating material such as a photosensitive acrylic polymer (photoacrylic).

[0210] A configuration in which external light reflection is prevented in the non-luminous area (NEA) and non-display area (NDA) of a display device (100A) according to the first embodiment of the present invention will be described in detail with reference to FIG. 6.

[0211] FIG. 6 is a schematic diagram illustrating the external light path of a display device according to the first embodiment of the present invention, showing only the components that affect the light path.

[0212] As shown in FIG. 6, a first light blocking part (170) is provided on the upper part of the pixel definition film (120), and a second light blocking part (230) is provided on the upper part of the first light blocking part (170).

[0213] The pixel definition film (120) has light absorption characteristics, the first light blocking part (170) selectively reflects or transmits light, and the second light blocking part (230) selectively absorbs or transmits light. Here, the transmission axes of the first light blocking part (170) and the second light blocking part (230) coincide and may be parallel to the first direction (X).

[0214] However, embodiments of the present invention are not limited thereto. In other embodiments, the transmission axes of the first light blocking unit (170) and the second light blocking unit (230) may be parallel to the second direction (Y). For example, if the first direction (X) is defined as 0 degrees and the second direction (Y) as 90 degrees, the transmission axis directions of the first light blocking unit (170) and the second light blocking unit (230) may both be 0 degrees, or the transmission axis directions of the first light blocking unit (170) and the second light blocking unit (230) may both be 90 degrees. These transmission axes of the first light blocking unit (170) and the second light blocking unit (230) may be parallel to the gate wiring or data wiring.

[0215] In contrast, in another embodiment, the transmission axis direction of the first light blocking part (170) and the second light blocking part (230) may be 45 degrees or 135 degrees. In this case, the transmission axis of the first light blocking part (170) and the second light blocking part (230) may form a 45-degree angle with the gate wiring or data wiring.

[0216] Among the unpolarized external light, the linearly polarized light (L1) of the first direction (X) passes through the second light blocking section (230) because it aligns with the transmission axis direction of the second light blocking section (230), and then passes through the first light blocking section (170) because it aligns with the transmission axis direction of the first light blocking section (170), and is absorbed by the pixel defining film (120).

[0217] On the other hand, among the unpolarized external light, the linearly polarized light (L2) in the second direction (Y) aligns with the absorption axis direction of the second light blocking unit (230) and is therefore absorbed by the second light blocking unit (230). At this time, some of the linearly polarized light (L2) in the second direction (Y) is not completely absorbed by the second light blocking unit (230) and reaches the first light blocking unit (170). Since it aligns with the reflection axis direction of the first light blocking unit (170), it is reflected by the first light blocking unit (170) and reaches the second light blocking unit (230) again. Since it aligns with the absorption axis direction of the second light blocking unit (230), it is absorbed by the second light blocking unit (230).

[0218] Accordingly, the display device (100A) according to the first embodiment of the present invention is provided with first and second light blocking parts (170, 230) on top of a pixel defining film (120) having light absorption characteristics to prevent external light from being reflected and output, thereby preventing or minimizing the problem of deterioration of display quality due to external light reflection and / or current leakage of the thin-film transistor.

[0219] In the display device (100A) according to the first embodiment of the present invention, if the positions of the first light blocking part (170) and the second light blocking part (230) are changed, that is, if the second light blocking part (230) is placed between the pixel defining film (120) and the first light blocking part (170), the second light blocking part (230) may be damaged by a subsequent process. Additionally, among the unpolarized external light, the linearly polarized light (L2) in the second direction (Y) is reflected by the first light blocking part (170), so the reflection of external light cannot be blocked.

[0220] Alternatively, if the first light blocking unit (170) is configured to be identical to the second light blocking unit (230), that is, if the first light blocking unit (170) is configured to include a reactive mesogen (232) and a dichroic dye (234), the first light blocking unit (170) may be damaged by a subsequent process, the external light reflection blocking properties may be degraded, and additional processes and costs may be incurred.

[0221] Alternatively, if the first light blocking section (170) is omitted, some of the light transmitted through the second light blocking section (230) is reflected by the second electrode (166) on the upper part of the pixel defining film (120) and output, while some of it passes through the second electrode (166) and is absorbed by the pixel defining film (120), thereby causing a problem of external light reflection.

[0223] Meanwhile, the transmission axes of the first light blocking part (170) and the second light blocking part (230) may not coincide. A display device according to the second embodiment of the present invention will be described with reference to FIG. 7.

[0224] FIG. 7 is a schematic cross-sectional view of a display device according to a second embodiment of the present invention. The display device according to the second embodiment of the present invention has substantially the same configuration as the first embodiment except for the configuration of the first light blocking part and the phase delay layer, and the same or similar reference numerals are assigned to the same parts, and the description thereof is omitted or brief.

[0225] As illustrated in FIG. 7, a display device (100B) according to the second embodiment of the present invention is provided with a light-emitting diode (De) on a substrate (102), and on the upper part of the light-emitting diode (De), an encapsulation layer (180), a sensor part (190), a color part (200), and a cover window (104) are provided.

[0226] A light-emitting diode (De) is located in a light-emitting area (EA) corresponding to each subpixel (SP) of a display area (DA), and a pixel defining film (120), a first light-blocking part (170B), and a second light-blocking part (230) are provided in a non-light-emitting area (NEA) and a non-display area (NDA) of the display area (DA).

[0227] Here, the transmission axes of the first light blocking section (170B) and the second light blocking section (230) do not coincide. Specifically, the direction of the transmission axis of the first light blocking section (170B) may be perpendicular to the direction of the transmission axis of the second light blocking section (230).

[0228] A phase delay layer (398) is provided between the first light blocking section (170B) and the second light blocking section (230). At this time, the phase delay layer (398) may be a sensor passivation layer that protects the sensor electrode (196) by being provided above the sensor buffer layer (192) and the sensor electrode (196). However, embodiments of the present invention are not limited thereto. In other embodiments, the phase delay layer (398) may be added as a separate layer above or below the sensor section (190).

[0229] For example, the phase delay layer (398) may have a phase delay of λ / 2. That is, the phase delay layer (398) may be a half wave plate (HWP) that has a phase delay of λ / 2 and changes the polarization direction of the incident light. Thus, the linear polarization passing through the phase delay layer (398) is changed into linear polarization rotated 90 degrees.

[0230] The optical axis of the phase delay layer (398) does not coincide with the transmission axis of the first and second light blocking sections (170B, 230). More specifically, the optical axis of the phase delay layer (398) may form a 45-degree angle with the transmission axis of the first and second light blocking sections (170B, 230).

[0231] This phase delay layer (398) may include a reactive mesogen (RM) arranged within an organic material. For example, the organic material may be a photosensitive acrylic polymer (photoacryl).

[0232] Reactive mesogens have a major axis and a minor axis, and the refractive index in the major axis direction (n e ) and refractive index in the short-axis direction (n o A refractive index anisotropic material in which a difference exists, wherein the refractive index in the long axis direction (n e ) is the refractive index in the short-axis direction (n o It is greater than ). For example, reactive mesogens are about 10 to 60 The major axis of and 5 to 10 It has a shortening factor, and the refractive index in the major axis direction (n e ) is 1.6~1.8, and the refractive index in the short axis direction (n o ) can be 1.4~1.5.

[0233] This phase delay layer (398) can be formed by applying an organic material containing reactive mesogen molecules and irradiating polarized ultraviolet light to align the reactive mesogen molecules in one direction and cure them.

[0234] Meanwhile, the phase delay layer (398) is formed not only in the non-emissive region (NEA) and non-display region (NDA), but also in the emissive region (EA). Since unpolarized light passes through the emissive region (EA), the phase delay layer (398) does not affect the polarization direction of the light in the emissive region (EA).

[0236] A configuration in which external light reflection is prevented in the non-emissive area (NEA) and non-display area (NDA) of a display device (100B) according to the second embodiment of the present invention will be described in detail with reference to FIG. 8.

[0237] FIG. 8 is a schematic diagram illustrating the external light path of a display device according to a second embodiment of the present invention, showing only the components that affect the light path.

[0238] As shown in FIG. 8, a first light blocking part (170B) is provided on the upper part of the pixel definition film (120), a phase delay layer (398) is provided on the upper part of the first light blocking part (170B), and a second light blocking part (230) is provided on the upper part of the phase delay layer (398).

[0239] The pixel definition film (120) has light absorption characteristics, the first light blocking part (170B) selectively reflects or transmits light, the phase delay layer (398) changes the polarization direction of the light, and the second light blocking part (230) selectively absorbs or transmits light.

[0240] Here, the transmission axes of the first light blocking section (170B) and the second light blocking section (230) are arranged vertically, and the optical axis of the phase delay layer (398) is arranged to form a 45-degree angle with the transmission axes of the first and second light blocking sections (170B, 230). At this time, the transmission axis of the first light blocking section (170B) may be parallel to the second direction (Y), and the transmission axis of the second light blocking section (230) may be parallel to the first direction (X).

[0241] For example, if the first direction (X) is defined as 0 degrees and the second direction (Y) as 90 degrees, the transmission axis direction of the first light blocking part (170B) is 90 degrees, the transmission axis direction of the second light blocking part (230) is 0 degrees, and the optical axis direction of the phase delay layer (398) may be 135 degrees. However, embodiments of the present invention are not limited thereto, and in other embodiments, the optical axis direction of the phase delay layer (398) may be 45 degrees.

[0242] Additionally, in another embodiment, the transmission axis direction of the first light blocking part (170B) is 0 degrees, the transmission axis direction of the second light blocking part (230) is 90 degrees, and the optical axis direction of the phase delay layer (398) may be 45 degrees or 135 degrees.

[0243] Among the unpolarized external light, the linearly polarized light (L1) of the first direction (X) passes through the second light blocking section (230) because it aligns with the transmission axis direction of the second light blocking section (230), passes through the phase delay layer (398) and changes its polarization direction to the second direction (Y), and then passes through the first light blocking section (170B) because it aligns with the transmission axis direction of the first light blocking section (170B) and is absorbed by the pixel defining film (120).

[0244] On the other hand, among the unpolarized external light, the linearly polarized light (L2) in the second direction (Y) aligns with the absorption axis direction of the second light blocking unit (230) and is therefore absorbed by the second light blocking unit (230). At this time, some of the linearly polarized light (L2) in the second direction (Y) is not completely absorbed by the second light blocking unit (230) but passes through the phase delay layer (398) and changes its polarization direction to the first direction (X) to reach the first light blocking unit (170B). Since it aligns with the reflection axis direction of the first light blocking unit (170B), it is reflected by the first light blocking unit (170B). Then, it passes through the phase delay layer (398) and changes its polarization direction to the second direction (Y) to reach the second light blocking unit (230). Since it aligns with the absorption axis direction of the second light blocking unit (230), it is absorbed by the second light blocking unit (230).

[0245] Accordingly, the display device according to the second embodiment of the present invention is provided with first and second light blocking sections (170B, 230) having different transmission axis directions on top of a pixel defining film (120) having light absorption characteristics, and a phase delay layer (398) is provided between the first and second light blocking sections (170B, 230) to prevent external light from being reflected and output, thereby preventing or minimizing the problem of deterioration of display quality and / or current leakage of the thin-film transistor due to external light reflection.

[0247] Meanwhile, the second light-blocking part (230) may be provided in the cover window (104). A display device according to the third embodiment of the present invention will be described with reference to FIG. 9.

[0248] FIG. 9 is a schematic cross-sectional view of a display device according to a third embodiment of the present invention. The display device according to the third embodiment of the present invention has substantially the same configuration as the preceding first and second embodiments, except for the configuration of the second light-blocking part, and the same or similar reference numerals are assigned to the same parts, and the description thereof is omitted or brief.

[0249] As illustrated in FIG. 9, a display device (100C) according to the third embodiment of the present invention is provided with a light-emitting diode (De) on a substrate (102), and on the upper part of the light-emitting diode (De), an encapsulation layer (180), a sensor part (190), a color part (200), and a cover window (104) are provided.

[0250] A light-emitting diode (De) is located in a light-emitting area (EA) corresponding to each subpixel (SP) of a display area (DA), and a pixel defining film (120), a first light-blocking part (170), and a second light-blocking part (430) are provided in a non-light-emitting area (NEA) and a non-display area (NDA) of the display area (DA).

[0251] At this time, the second light blocking part (430) is provided in the cover window (104). Specifically, the second light blocking part (430) is located on the inner surface of the cover window (104). An alignment film may be further provided between the cover window (104) and the second light blocking part (430). This second light blocking part (430) may be spaced apart from the color filter layer (240).

[0252] Here, the transmission axes of the first light blocking part (170) and the second light blocking part (430) coincide, and the external light reflection characteristics of the display device (100C) according to the third embodiment of the present invention are substantially the same as those of FIG. 6.

[0253] In another embodiment, the transmission axis of the first light blocking part (170) and the second light blocking part (430) may not coincide. Specifically, the transmission axis of the first light blocking part (170) may be perpendicular to the transmission axis of the second light blocking part (430), and a phase delay layer having a phase delay of λ / 2 may be provided between the first light blocking part (170) and the second light blocking part (230).

[0255] A display device according to such an embodiment of the present invention can be applied to a foldable display device. This will be explained with reference to FIGS. 10 to 12.

[0256] FIG. 10 is a schematic exploded perspective view of a display module according to an embodiment of the present invention, FIG. 11 is a schematic cross-sectional view of a display module according to an embodiment of the present invention, and FIG. 12 is a schematic plan view of a display module according to an embodiment of the present invention. FIG. 11 shows a cross-section along the cutting line E-E' of FIG. 10.

[0257] Referring to FIGS. 10 to 12, the display module (500) according to an embodiment of the present invention is a foldable display device module, and the folding axis (A1-A1') of the display module (500) may be the same as the second direction (DR2).

[0258] A top frame (TF) is positioned at the uppermost part of the display module (500). The top frame (TF) includes a first top frame (TF1) positioned on one side with respect to the folding axis (A1) and a second top frame (TF2) positioned on the other side. The top frame (TF) is positioned to cover the edges of the display device (510). The top frame (TF) can protect the display device (510) from external impact. The top frame (TF) can form the bezel of the display device (510).

[0259] A cover layer (CG) may be disposed on the lower part of the top frame (TF). The cover layer (CG) may be disposed on the upper part of the display device (510).

[0260] The cover layer (CG) is positioned on the upper part of the display device (510) and can serve to protect the members positioned on the lower part of the cover layer (CG) from the outside. The cover layer (CG) may be the cover window (104) of the preceding embodiment.

[0261] An assembly is disposed on the lower portion of the cover layer (CG). The assembly includes a display device (510) and a plate (PLT). The display device (510) may have a structure substantially identical to one of the display devices (100A, 100B, 100C) described through FIGS. 1, 7, and 9.

[0262] The plate (PLT) may include various plates for supporting the display device (510) by being placed at the bottom of the display device (510). For example, one or more plates may include a back plate for supporting the display device (510), a top plate placed at the bottom of the back plate and formed of SUS material, a bottom plate placed at the bottom of the top plate and formed of SUS material with a pattern formed on the folding part, a heat dissipation sheet having a heat dissipation function, and a middle plate for covering a non-flat plane due to various configurations of the hinge assembly.

[0263] A slit pattern (PTN) may be formed on the plate (PLT). The slit pattern (PTN) may be formed at a location corresponding to the folding area (FA) of the display device (510). The slit pattern (PTN) may be an etched portion of a slit shape formed on the plate (PLT). The plate (PLT) may be formed of a metal, such as stainless steel, for example, but the strong properties of the metal may cause an impediment to the plate (PLT) folding or unfolding. The slit pattern (PTN) may compensate for the flexibility of the plate (PLT).

[0264] A middle plate (MST) is positioned at the bottom of the assembly. The middle plate (MST) supports components positioned further upward therefrom. Additionally, a hinge assembly (520) and a cover frame (CF1, CF2) are positioned at the bottom of the middle plate (MST), and their upper surfaces may be uneven. The middle plate (MST) can flatten the non-flattened lower surface. The middle plate (MST) may be formed from a material such as plastic, polyimide, or metal to increase the rigidity of the display module (500). For example, the middle plate (MST) may include aluminum or stainless steel (SUS), but the embodiments of this specification are not limited thereto.

[0265] The middle plate (MST) may include a first middle plate portion (MSTH1) disposed in a first unfolding area (NFA1) and a second middle plate portion (MSTH2) disposed in a second unfolding area (NFA2).

[0266] A hinge assembly (520) is positioned at the bottom of the assembly. The hinge assembly (520) is positioned at the bottom of the folding area (FA). The hinge assembly (520) may have an elongated shape along the folding axis (A1-A1'). The hinge assembly (520) can perform a folding movement in which one side and the other side rotate with respect to the folding axis (A1-A1').

[0267] A cover frame (CF1, CF2) is disposed on the lower part of the hinge assembly (520). A receiving groove may be formed on the upper surface of the cover frame (CF1, CF2) to accommodate a part of the hinge assembly (520). The cover frame (CF1, CF2) includes a first cover frame (CF1) disposed on one side with respect to the folding axis (A1-A1') and a second cover frame (CF2) disposed on the other side. The cover frame (CF1, CF2) may be a housing that defines the side and back surfaces of the display module (500). The cover frame (CF1, CF2) can protect the display module (500) from external impact. The cover frame (CF1, CF2) may be coupled to the hinge assembly (520). Folding and unfolding of the display module (500) can be implemented depending on the rotation of the cover frame (CF1, CF2).

[0268] Between adjacent members (MST, PLT, 510, CG), additional connecting members (BM1, BM2, BM3) that connect them may be disposed. The first connecting member (BM1) can connect the middle plate portion (MSTH1, MSTH2) and the upper plate (PLT) in each unfolding area (NFA1, NFA2), the second connecting member (BM2) can connect the plate (PLT) and the upper display device (510), and the third connecting member (BM3) can connect the display device (510) and the cover layer (CG).

[0269] The combined plates (PLT), middle plates (MST), and display device (510) can be seated on the cover frames (CF1, CF2). The display module (500) can perform folding and unfolding operations by means of a hinge assembly (520) placed on the cover frames (CF1, CF2).

[0271] Although the present invention has been described above with reference to exemplary embodiments and examples, the present invention is not limited to the technical concept described in the above embodiments and examples, and a person skilled in the art will understand that the present invention can be modified and changed in various ways without departing from the technical concept and scope of the present invention as described in the following claims. Explanation of the symbols

[0273] 100A, 100B, 100C: Display device De : Light Emitting Diode 120 : Pixel definition layer 170, 170B: First light blocking section 180: Encapsulation layer 190 : Sensor section 230, 430: 2nd light blocking section 398 : Phase delay layer

Claims

Claim 1 A display device comprising: a substrate having a light-emitting region and a non-light-emitting region; a light-emitting diode provided in the light-emitting region on the upper part of the substrate and including a first electrode, a light-emitting layer, and a second electrode; a pixel defining film provided in the non-light-emitting region on the upper part of the substrate; a first light blocking part on the upper part of the pixel defining film; and a second light blocking part on the upper part of the first light blocking part, wherein the pixel defining film has light-absorbing characteristics, and the first light blocking part and the second light blocking part transmit linearly polarized light in the direction of the transmission axis and reflect or absorb linearly polarized light in a direction perpendicular to the transmission axis. Claim 2 A display device according to claim 1, wherein a display area including the light-emitting region and the non-light-emitting region is provided on the substrate, and a non-display area is provided on at least one side of the display area, and the pixel defining film, the first light blocking part, and the second light blocking part are located in the non-light-emitting region and the non-display area. Claim 3 A display device according to claim 1, wherein the first light blocking part transmits linearly polarized light in the direction of the transmission axis and reflects linearly polarized light in the direction perpendicular to the transmission axis, and the second light blocking part transmits linearly polarized light in the direction perpendicular to the transmission axis and absorbs linearly polarized light in the direction perpendicular to the transmission axis. Claim 4 A display device in which the transmission axis direction of the first light-blocking part and the transmission axis direction of the second light-blocking part coincide in paragraph 3. Claim 5 A display device according to paragraph 3, further comprising a phase delay layer between the first light blocking part and the second light blocking part, wherein the transmission axis direction of the first light blocking part and the transmission axis direction of the second light blocking part are arranged perpendicularly. Claim 6 In claim 5, the display device further comprises a sensor electrode between the first light blocking part and the second light blocking part, and the phase delay layer is located between the sensor electrode and the second light blocking part. Claim 7 A display device according to claim 5, wherein the phase delay layer has a phase delay of λ / 2, and the optical axis of the phase delay layer forms a 45-degree angle with the transmission axis of the first light blocking part and the second light blocking part. Claim 8 In any one of claims 1 to 7, the first light-blocking part is a wire grid polarizer, a display device. Claim 9 In claim 8, the first light-blocking part is a display device formed in the same layer with the same material as the second electrode of the light-emitting diode. Claim 10 A display device according to any one of claims 1 to 7, wherein the second light-blocking part comprises a reactive mesogen and a dichroic dye. Claim 11 A display device according to any one of claims 1 to 7, further comprising a thin-film transistor electrically connected to the light-emitting diode between the substrate and the light-emitting diode, wherein the thin-film transistor comprises a semiconductor layer made of an oxide semiconductor material. Claim 12 A display device according to any one of claims 1 to 7, further comprising, between the substrate and the light-emitting diode, a first transistor having a first semiconductor layer and a second transistor having a second semiconductor layer, which are electrically connected to the light-emitting diode, wherein the first semiconductor layer and the second semiconductor layer are made of different materials. Claim 13 A display device according to claim 12, wherein one of the first semiconductor layer and the second semiconductor layer is made of an oxide semiconductor material, and the other of the first semiconductor layer and the second semiconductor layer is made of polycrystalline silicon. Claim 14 In claim 12, the first semiconductor layer is made of an oxide semiconductor material, and the first transistor is a driving transistor connected to the light-emitting diode, in a display device. Claim 15 A display device according to any one of claims 1 to 7, wherein the pixel defining film is a black bank. Claim 16 A display device according to any one of claims 1 to 7, further comprising: an encapsulation layer above the light-emitting diode and the pixel definition film; and a color filter layer located above the encapsulation layer and corresponding to the light-emitting diode. Claim 17 In claim 16, the display device further comprises a cover window above the second light-blocking part, wherein the second light-blocking part is located between the cover window and the color filter layer. Claim 18 A display device according to any one of claims 1 to 7, further comprising: an encapsulation layer above the light-emitting diode and the pixel definition film; and a sensor portion above the encapsulation layer.

Images