Roll-to-roll atomic layer deposition apparatus

Abstract

The present invention relates to a roll-to-roll atomic layer deposition apparatus, and more specifically, to a roll-to-roll atomic layer deposition apparatus that deposits an atomic layer under a plasma atmosphere while transporting a substrate roll-to-roll. To this end, a roll-to-roll atomic layer deposition apparatus is disclosed, comprising: a substrate chamber disposed in a first section area of ​​the atomic layer deposition chamber, wherein a first roller for supplying a substrate and a second roller for winding a substrate are disposed therein; an ultraviolet irradiation chamber disposed in a second section area of ​​the atomic layer deposition chamber, wherein surface treatment of the substrate is performed by irradiating ultraviolet rays onto a substrate on which a precursor gas is deposited; an inert gas supply chamber disposed in a third section area of ​​the atomic layer deposition chamber, wherein an inert gas is injected onto a substrate on which a precursor gas is deposited; and a precursor supply chamber disposed in a fourth section area of ​​the atomic layer deposition chamber, wherein a precursor is deposited as an atomic layer on the substrate surface by supplying the precursor gas to the substrate surface.

Description

Technology Field

[0001] The present invention relates to a roll-to-roll atomic layer deposition apparatus, and more specifically, to a roll-to-roll atomic layer deposition apparatus that deposits an atomic layer under a plasma atmosphere while transferring a substrate roll-to-roll. Background Technology

[0002] In the prior art document, Korean Published Patent Application KR 10-2012-7009485, the chamber is divided into three sections, and a precursor (A), an inert gas, and a precursor (B) are supplied to each divided chamber area for atomic layer deposition. According to this prior art document, there is a problem in that a very long time is required to sequentially deposit atomic layers on a substrate within the limited space of the atomic layer deposition chamber. Prior art literature

[0003] KR 10-2012-7009485KR 10-2008-7029709KR 10-2008-7023321KR 10-2013-7001703JP 2016-111875 The problem to be solved

[0004] Accordingly, the present invention was created to solve the aforementioned problems, and its purpose is to provide an invention that enables the deposition of atomic layer deposition on a substrate in a much faster time compared to conventional technology by separating the substrate transfer into a forward transfer cycle and a reverse transfer cycle, even within the space of an atomic layer deposition chamber with limited space, and by using a bidirectional plasma electrode accordingly.

[0005] However, the objectives of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0006] The object of the present invention described above can be achieved by providing a roll-to-roll atomic layer deposition apparatus characterized by comprising: a substrate chamber disposed in a first section area of ​​the atomic layer deposition chamber, wherein a first roller for supplying a substrate and a second roller for winding the substrate are disposed therein; an ultraviolet irradiation chamber disposed in a second section area of ​​the atomic layer deposition chamber, wherein the surface treatment of the substrate is performed by irradiating ultraviolet rays onto the substrate on which a precursor gas is deposited; an inert gas supply chamber disposed in a third section area of ​​the atomic layer deposition chamber, wherein an inert gas is injected onto the substrate on which a precursor gas is deposited; and a precursor supply chamber disposed in a fourth section area of ​​the atomic layer deposition chamber, wherein the precursor is deposited as an atomic layer on the substrate surface by supplying the precursor gas to the substrate surface.

[0007] In addition, the ultraviolet irradiation chamber, the inert gas supply chamber, and the precursor supply chamber are arranged such that the section areas of each chamber are sequentially alternated based on the horizontal direction, which is the transport direction of the substrate.

[0008] Additionally, the ultraviolet irradiation chamber irradiates the substrate while transporting it with ultraviolet rays and includes a plurality of ultraviolet irradiation rollers provided at a predetermined distance apart in a direction perpendicular to the horizontal direction, which is the transport direction of the substrate.

[0009] In addition, the inert gas flowing within the inert gas supply chamber is injected in a vertical direction perpendicular to the horizontal direction, which is the transport direction of the substrate.

[0010] Additionally, the precursor supply chamber includes a plasma source section equipped with a plasma electrode and provided in multiple directions perpendicular to the horizontal direction, which is the direction of transport of the substrate, and a transport roller that transports the substrate and is provided in multiple directions perpendicular to the horizontal direction, which is the direction of transport of the substrate.

[0011] In addition, the transport direction of the inert gas is a vertical path, and the substrate on which the precursor is deposited is exposed to the inert gas while being transported along a horizontal path.

[0012] Additionally, the apparatus further includes a first substrate transport path in which a substrate is sequentially transported in a first horizontal direction so that an atomic layer deposition is sequentially stacked according to a repeating cycle, a vertical substrate transport path in which a substrate is continuously transported in a vertical direction after the atomic layer deposition cycle of the first substrate transport path is completed, and a second substrate transport path in which a substrate is sequentially transported in a second horizontal direction opposite to the first horizontal direction so that an atomic layer deposition is sequentially stacked according to a repeating cycle, wherein the first substrate transport path, the vertical substrate transport path, and the second substrate transport path are sequentially repeated.

[0013] In addition, the first roller supplying the material and the second roller winding it are positioned on a virtual same vertical line, thereby forming the first, second, third, and fourth section regions in the atomic layer deposition chamber. Effects of the invention

[0014] According to the present invention as described above, there is an effect of being able to deposit an atomic layer on a substrate in a very short time compared to the prior art, even within the space of an atomic layer deposition chamber where the space is limited. Brief explanation of the drawing

[0015] The following drawings attached to this specification illustrate a preferred embodiment of the present invention and serve to further enhance understanding of the technical concept of the present invention together with the detailed description of the invention; therefore, the present invention should not be interpreted as being limited only to the matters described in such drawings. FIGS. 1 and 2 are drawings showing the approximate configuration of a roll-to-roll atomic layer deposition apparatus according to an embodiment of the present invention, and FIG. 3 is a drawing illustrating an ultraviolet irradiation roller according to an embodiment of the present invention. Specific details for implementing the invention

[0016] Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. Furthermore, the embodiment described below does not unduly limit the scope of the present invention as defined in the claims, and the entire configuration described in this embodiment is not considered essential as a means of solving the present invention. Additionally, descriptions of prior art and matters obvious to those skilled in the art may be omitted, and such omitted descriptions of components (methods) and functions may be sufficiently referenced within the scope that does not depart from the technical spirit of the present invention.

[0018] A roll-to-roll atomic layer deposition apparatus according to one embodiment of the present invention is an apparatus that performs atomic layer deposition under a plasma atmosphere while transferring a substrate (11, film or web) in a roll-to-roll manner. To perform atomic layer deposition under a plasma atmosphere, the atomic layer deposition chamber (10) described below may be performed under a vacuum atmosphere as necessary. Hereinafter, a roll-to-roll atomic layer deposition apparatus according to one embodiment of the present invention will be described in detail with reference to the attached drawings.

[0020] Referring to FIGS. 1 and 2, the atomic layer deposition chamber (10) is divided into independent partitions into a first section, a second section, a third section, and a fourth section. The substrate chamber (100) is a first section chamber that supplies and winds the substrate (11) by roll-to-roll. The ultraviolet irradiation chamber (200) is a second section chamber that transports the substrate (11) while irradiating ultraviolet rays. The inert gas supply chamber (400) is a third section chamber that sprays inert gas onto the substrate. The precursor supply chamber (300) is a fourth section chamber that supplies a precursor so that the precursor is deposited on the substrate (11). Each section chamber is arranged sequentially.

[0022] In the present invention, each chamber (200, 300, 400) is arranged sequentially and repeatedly in a horizontal direction. That is, a first ultraviolet irradiation chamber (210) is arranged next to the substrate chamber (100), a first inert gas supply chamber (410) is arranged next to the first ultraviolet irradiation chamber (210), and a first precursor supply chamber (310) is arranged next to the first inert gas supply chamber (410). As each chamber is arranged sequentially in this way, an atomic layer deposition is stacked as one layer, and as the chambers are arranged sequentially and repeatedly, an atomic layer deposition is stacked as many times as the number of repetitions.

[0023] However, in FIG. 1, the first ultraviolet irradiation chamber (210) is placed first, but in another embodiment, the first precursor supply chamber (310) may be placed first. That is, atomic layer deposition can be performed by changing the order of the first ultraviolet irradiation chamber (210) and the first precursor supply chamber (310). In either case, the inert gas supply chamber (400) is placed in the space between the ultraviolet irradiation chamber (200) and the precursor supply chamber (300).

[0025] As shown in FIG. 1, the substrate chamber (100) is positioned in the left area of ​​the atomic layer deposition chamber (10). For convenience of explanation, the substrate chamber (110) is positioned in the left area, but it may also be positioned in the right area. Therefore, it is possible for the supply roller (111) and the winding roller (112) to be positioned on the same vertical line in the left or right end area of ​​the atomic layer deposition chamber (10) by independent partition division.

[0027] In the substrate chamber (110), a supply roller (111) and a winding roller (112) are arranged on the same virtual vertical line. As an example, the supply roller (111) is positioned in the upper region of the winding roller (112) to supply the substrate (11) horizontally toward the first ultraviolet irradiation chamber (210), and the winding roller (112), positioned vertically below the supply roller (111), receives the substrate (11), on which atomic layer deposition has been performed over multiple cycles, horizontally from the first ultraviolet irradiation chamber (210) and winds it.

[0028] At this time, the direction in which atomic layer deposition is performed sequentially based on FIG. 1 is called the forward deposition cycle of the atomic layer deposition cycle. That is, the forward deposition cycle includes a first substrate transfer path in which atomic layer deposition is sequentially stacked according to a repeating cycle by sequentially transferring the substrate in a first horizontal direction (left to right), a first vertical substrate transfer path in which the substrate is transferred in a vertical direction continuously after the atomic layer deposition cycle of the first substrate transfer path ends, a second substrate transfer path in which atomic layer deposition is sequentially stacked according to a repeating cycle by sequentially transferring the substrate in a second horizontal direction (right to left) opposite to the first horizontal direction continuously to the vertical substrate transfer path, and a second vertical substrate transfer path in which the substrate is transferred in a vertical direction continuously after the atomic layer deposition cycle of the second substrate transfer path ends, and the first substrate transfer path, the first vertical substrate transfer path, and the second substrate transfer path are repeated as in FIG. 1 depending on the size of the atomic layer deposition chamber (10).

[0030] However, in the present invention, since the direction of the atomic layer deposition cycle can be rotated in the forward and reverse directions, the supply roller (111) described above performs a winding function and the winding roller (112) performs a supply function, so when the atomic layer deposition cycle proceeds in the reverse direction, this is called a reverse deposition cycle.

[0032] Meanwhile, the first substrate transfer path is a path from the supply roller (111) to the first ultraviolet irradiation roller (241) of the fourth ultraviolet irradiation chamber (240), based on FIG. 1, and is a 1-cycle horizontal atomic layer deposition. Likewise, the second substrate transfer path is a path from the first transfer roller (243) of the fourth ultraviolet irradiation chamber (240) to the first transfer roller (113) of the substrate chamber (100), and is a 2-cycle horizontal atomic layer deposition. The third and fourth cycles of horizontal atomic layer deposition are performed using the same principle.

[0034] The ultraviolet irradiation chamber (200) performs surface treatment by irradiating ultraviolet rays onto a substrate (11) on which a precursor gas is deposited. The ultraviolet irradiation chamber (200) includes first, ..., fourth ultraviolet rays (210, ..., 240). Since the configuration of each ultraviolet irradiation chamber is the same, the first ultraviolet irradiation chamber (210) will be described below, and the description of the remaining chambers will substitute for the description of the first ultraviolet irradiation chamber (210).

[0036] The first ultraviolet irradiation chamber (210) is positioned in the second section area of ​​the atomic layer deposition chamber (10) located right next to the substrate chamber (100) positioned in the first section area. The first ultraviolet irradiation chamber (210) is equipped with first, ..., third ultraviolet irradiation rollers (211, ..., 213) and a transfer roller (214). However, the second and third ultraviolet irradiation chambers (220, 230) are equipped only with ultraviolet irradiation rollers, and the fourth ultraviolet irradiation chamber (240) is equipped with both ultraviolet irradiation rollers and a transfer roller, as in the first ultraviolet irradiation chamber (210). The first, ..., third ultraviolet irradiation rollers (211, ..., 213) and the transfer roller (214) positioned in the first ultraviolet irradiation chamber (210) are positioned at a predetermined distance apart in the vertical direction.

[0037] The first, ..., third ultraviolet irradiation rollers (211, ..., 213) have the same structure as each other and will be explained with reference to FIG. 3. However, the number of ultraviolet irradiation rollers shown in FIG. 1 may vary depending on the size of the atomic layer deposition chamber (10).

[0039] As illustrated in FIG. 3, the first ultraviolet irradiation roller (211) conveys the substrate (11) while simultaneously irradiating ultraviolet light onto the substrate (11) on which the precursor is deposited in an atomic layer. To this end, an ultraviolet lamp is placed inside the ultraviolet irradiation roller (211). The ultraviolet irradiation roller (211) is provided with a conveying surface (211a) and an irradiation surface (211b).

[0040] The transfer surface (211a) transfers the substrate (11), and the substrate (11) on which the precursor is not deposited comes into contact with the transfer surface (211a). The irradiation surface (211b) is formed with a step so that its height is lower than that of the transfer surface (211a), so that the deposition surface on which the precursor is deposited does not come into contact with the irradiation surface (211b). A plurality of ultraviolet irradiation holes (211c) are formed in the irradiation surface (211b) to allow ultraviolet light to be emitted from an ultraviolet lamp placed inside. However, as shown in FIG. 3, the ultraviolet irradiation holes (211c) may be formed in the irradiation surface (211b), and instead of the irradiation holes, the irradiation surface (211b) may be formed as an open surface so that the ultraviolet lamp is irradiated onto the entire substrate (11), allowing the ultraviolet lamp and the substrate (11) to face each other at a predetermined distance.

[0042] An inert gas supply chamber (400) supplies inert gas so that a precursor is deposited as an atomic layer on a substrate (11). The inert gas supply chamber (400) includes first, ..., sixth inert gas supply chambers (410, ..., 460). Each inert gas supply chamber (400) is placed in the space between the ultraviolet irradiation chamber (200) and the precursor supply chamber (300). The inert gas supplied into the inert gas supply chamber (400) is sprayed onto the substrate (11) on which the precursor is deposited, which is transported in a horizontal direction. The transport direction of the inert gas is a vertical path, and the substrate (11) on which the precursor is deposited is exposed to the inert gas while being transported in a horizontal path.

[0044] The precursor supply chamber (300) supplies a precursor gas to the surface of the substrate (11), thereby depositing an atomic layer of the precursor onto the substrate surface. The precursor supply chamber (300) includes a first, ..., third precursor supply chamber (310, ..., 330). Since the configuration of each precursor supply chamber is the same, the first precursor supply chamber (310) will be described below, and the description of the remaining chambers will substitute for the description of the first precursor supply chamber (310).

[0046] The first precursor supply chamber (310) is equipped with first, ..., fourth transfer rollers (315, ..., 318) that transfer the substrate (11) in a horizontal direction. The first, ..., fourth transfer rollers (315, ..., 318) are arranged at a predetermined distance apart in a vertical direction. The first transfer roller (315) receives the substrate (11) from the first ultraviolet irradiation roller (211) of the first ultraviolet irradiation chamber (210) and continuously transfers the substrate (11) toward the first ultraviolet irradiation roller (221) of the second ultraviolet irradiation chamber (220). The second, ..., fourth transfer rollers (316, ..., 318) also transfer the substrate (11) in a horizontal direction according to the same principle.

[0048] The precursor gas flowing into the precursor supply chamber (300) is supplied from a precursor gas supply unit (not shown in the drawing), and a gas supply pipe is arranged so that it flows from the top to the bottom of the atomic layer deposition chamber (10) (see y-axis in FIG. 1) and then exits to the rear of the atomic layer deposition chamber (10) (see x-axis in FIG. 1).

[0050] The meaning of the horizontal transfer of the above-described material (11) is that the overall transfer flow of the material (11) is transferred approximately in a horizontal direction.

[0052] In the first precursor supply chamber (300), first, ..., fourth plasma source sections (311, ..., 314) are arranged, and the plasma source sections are equipped with plasma electrodes. The first, ..., fourth plasma source sections (311, ..., 314) are arranged in pairs with the first, ..., fourth transfer rollers (315, ..., 318). Meanwhile, referring to FIG. 2, the first plasma source section (311) and the fourth plasma source section (314) share the first plasma generator (G1), and the second plasma source section (312) and the third plasma source section (313) share the fourth plasma generator (G4). That is, if the first to fourth section chambers are arranged as in the present invention, there is an advantage that plasma generators can be shared with each other.

[0054] The number of the first, ..., fourth transfer rollers (315, ..., 318) and the first, ..., fourth plasma source parts (311, ..., 314) described above may vary depending on the size of the atomic layer deposition chamber (10).

[0056] Since the direction of the atomic layer deposition cycle described above can be rotated in forward and reverse directions, the thickness of the atomic layer deposition can be conveniently controlled. Additionally, although not shown in the drawing, the time required to reset the substrate (11) can be saved by cutting off the end of the substrate (11) after deposition is complete, joining a new substrate (11), and immediately performing the deposition process. The bonding surface between the substrate that has completed deposition and the new substrate can be automatically read by image analysis through video recording to check for defects.

[0058] In describing the present invention, prior art and matters obvious to those skilled in the art may be omitted, and descriptions of such omitted components (methods) and functions may be sufficiently referenced within the scope that does not depart from the technical spirit of the present invention. Furthermore, the components of the present invention described above are explained only for the convenience of explaining the invention, and components not described herein may be added within the scope that does not depart from the technical spirit of the present invention.

[0060] The descriptions of the composition and function of each part mentioned above have been explained separately for the sake of convenience of explanation; however, as necessary, any one composition or function may be integrated into another component or implemented in a more subdivided manner.

[0062] Although the present invention has been described with reference to an exemplary embodiment, the invention is not limited thereto, and various modifications and applications are possible. That is, those skilled in the art will readily understand that many modifications are possible within the scope of the essence of the invention. Furthermore, it should be noted that specific descriptions of known functions and configurations related to the invention, or the combination relationships of each configuration of the invention, have been omitted if it is determined that such descriptions would unnecessarily obscure the essence of the invention. Explanation of the symbols

[0063] 10: Atomic layer deposition chamber 11 : Material (Film, Web) 100 : Material chamber 111: 1st supply roller 112: 2nd winding roller 113: 1st transfer roller 114: 2nd transfer roller 200: UV irradiation chamber 210: First UV irradiation chamber 211,… .,213 : 1st,… .,3rd UV Irradiation Roller 211a : Transfer surface 211b : Examination surface 211c: UV irradiation hole 214: Transfer roller 220: Second UV irradiation chamber 221,… .,224 : 1st,… .,4th UV Irradiation Roller 230: Third UV irradiation chamber 231,… .,234 : 1st,… .,4th UV Irradiation Roller 240: 4th UV irradiation chamber 241,242: 1st and 2nd UV irradiation rollers 243,244: 1st and 2nd transfer rollers 300: Precursor supply chamber 310: First precursor supply chamber 311,… .,314 : 1st,… .,4th Plasma Source Section 315,… .,318 : 1st,… .,4th transfer roller 320: Second precursor supply chamber 321,… .,324 : 1st,… .,4th Plasma Source Section 325,… .,328 : 1st,… .,4th transfer roller 330: Third precursor supply chamber 331,… .,334 : 1st,… .,4th Plasma Source Section 335,… .,338 : 1st,… .,4th transfer roller 400: Inert gas supply chamber 410,… .,460 : 1st,… .,6th inert gas supply chamber

Claims

Claim 1 A roll-to-roll atomic layer deposition apparatus characterized by comprising: a substrate chamber disposed in a first section area of ​​the atomic layer deposition chamber, wherein a first roller for supplying a substrate and a second roller for winding a substrate are disposed therein; an ultraviolet irradiation chamber disposed in a second section area of ​​the atomic layer deposition chamber, wherein surface treatment of the substrate is performed by irradiating ultraviolet rays onto the substrate on which a precursor gas is deposited; an inert gas supply chamber disposed in a third section area of ​​the atomic layer deposition chamber, wherein an inert gas is injected onto the substrate on which the precursor gas is deposited; and a precursor supply chamber disposed in a fourth section area of ​​the atomic layer deposition chamber, wherein the precursor is deposited as an atomic layer on the substrate surface by supplying the precursor gas to the substrate surface. Claim 2 A roll-to-roll atomic layer deposition apparatus according to claim 1, wherein the ultraviolet irradiation chamber, the inert gas supply chamber, and the precursor supply chamber are arranged such that the section areas of each chamber are sequentially alternately arranged based on the horizontal direction, which is the transport direction of the substrate. Claim 3 A roll-to-roll atomic layer deposition apparatus according to claim 1, wherein the ultraviolet irradiation chamber conveys the substrate while irradiating ultraviolet rays onto the substrate, and comprises a plurality of ultraviolet irradiation rollers provided at a predetermined distance apart in a direction perpendicular to the horizontal direction in which the substrate is conveyed. Claim 4 A roll-to-roll atomic layer deposition apparatus according to claim 1, characterized in that the inert gas flowing within the inert gas supply chamber is injected in a vertical direction perpendicular to the horizontal direction which is the transport direction of the substrate. Claim 5 A roll-to-roll atomic layer deposition apparatus according to claim 1, wherein the precursor supply chamber comprises a plasma source section having a plurality of plasma source sections Claim 6 A roll-to-roll atomic layer deposition apparatus according to claim 4, wherein the transport direction of the inert gas is a vertical path, and the substrate on which the precursor is deposited is exposed to the inert gas while being transported along a horizontal path. Claim 7 A roll-to-roll atomic layer deposition apparatus according to claim 1, further comprising: a first substrate transfer path in which atomic layer deposition is sequentially stacked according to a repeating cycle by sequentially transferring a substrate in a first horizontal direction; a vertical substrate transfer path in which a substrate is continuously transferred in a vertical direction after the atomic layer deposition cycle of the first substrate transfer path is completed; and a second substrate transfer path in which atomic layer deposition is sequentially stacked according to a repeating cycle by sequentially transferring a substrate in a second horizontal direction opposite to the first horizontal direction in a continuous manner with respect to the vertical substrate transfer path, wherein the first substrate transfer path, the vertical substrate transfer path, and the second substrate transfer path are sequentially repeated. Claim 8 A roll-to-roll atomic layer deposition apparatus according to claim 1, characterized in that the first roller supplying the substrate and the second roller winding it are arranged on a virtual identical vertical line, thereby forming the first, second, third, and fourth section regions in the atomic layer deposition chamber.

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