Multi-beam writing apparatus and multi-beam writing method

Abstract

A multi-beam drawing device of one embodiment of the present invention is characterized by comprising: a movable stage for loading a substrate to be drawn with a multi-beam; a stripe area generating circuit that generates a plurality of first stripe areas divided such that the long direction is a first direction, and a plurality of second stripe areas divided such that the long direction has a predetermined relative angle with respect to the first direction, and a drawing mechanism that performs tracking control repeatedly so that the irradiation area of ​​the multi-beam follows the movement of the stage, and during each tracking control, forms a group of first and second stripe areas in which a portion of each of the plurality of first stripe areas and the plurality of second stripe areas overlaps, and moves the irradiation area of ​​the multi-beam between the first and second stripe areas of the same group, and draws the group of first and second stripe areas during a single stage drive toward the drawing progress direction.

Description

Technology Field

[0001] The present application claims priority based on Japanese Patent Application No. 2025-039783 filed on March 12, 2025, the full text of which is incorporated herein by reference. Background Technology

[0002] The present invention relates to a multi-beam drawing device and a multi-beam drawing method, for example, to a drawing method in a multi-beam drawing device. The problem to be solved

[0003] Lithography technology, responsible for the advancement of semiconductor device miniaturization, is a critical process that is unique among semiconductor manufacturing processes for generating patterns. In recent years, accompanied by the high integration of LSIs, the circuit linewidth required for semiconductor devices has been miniaturizing year after year. Here, electron beam lithography technology possesses inherently excellent resolution, and lithography is performed using electron beams on wafers and other materials.

[0004] For example, there is a multi-beam imaging device. Compared to imaging with a single electron beam, using a multi-beam allows many beams to be irradiated at once, thereby significantly improving throughput. In such a multi-beam imaging device, for example, an electron beam emitted from an electron gun is passed through a mask having multiple holes to form a multi-beam, and each beam is blanked and unshielded. Each beam is reduced in an optical system and deflected by a deflector to be irradiated at a desired location on a sample.

[0005] Here, in multi-beam drawing, if there is a defective beam within the multi-beam that is difficult to control the dose of, a location is periodically drawn by this defective beam. There was a problem in that if the direction drawn by the multi-beam coincides with the longer side of the side constituting the pattern edge, periodic errors or pattern errors occur in the pattern drawn by the defective beam. To address this, a method of drawing by forming an angle with respect to the main pattern direction of the exposure stripe has been disclosed (see Japanese Patent Publication No. 6948765). However, it is difficult for the drawing device to easily determine the direction of the pattern edge existing within the pattern layout, and a vast amount of calculation is required to determine all pattern edges. Furthermore, the direction of the pattern edge does not always face a constant direction due to so-called grid matching correction, etc. Therefore, drawing while moving the stage at an angle is insufficient. means of solving the problem

[0006] A multi-beam drawing device of one embodiment of the present invention is,

[0007] A movable stage for loading a substrate to be drawn with a multi-beam, and

[0008] A stripe area generating circuit that generates a plurality of first stripe areas divided such that the longer direction is the first direction, and a plurality of second stripe areas divided such that the longer direction has a predetermined relative angle with respect to the first direction, and

[0009] A drawing mechanism that, while repeatedly performing tracking control so that the irradiation area of ​​a multi-beam follows the movement of a stage, forms a group of first and second stripe areas in which a portion of each of a plurality of first stripe areas and a plurality of second stripe areas overlaps, and draws the group of first and second stripe areas during a single stage movement toward the drawing direction while moving the irradiation area of ​​the multi-beam between the first and second stripe areas of the same group, during each tracking control.

[0010] It is characterized by having [ ].

[0011] A multi-beam drawing method of one aspect of the present invention is,

[0012] A substrate to be drawn with a multi-beam is loaded onto a movable stage, and

[0013] A drawing area of ​​a substrate is created to have a plurality of first stripe areas divided such that the longer direction is the first direction, and a plurality of second stripe areas divided such that the longer direction has a predetermined relative angle with respect to the first direction.

[0014] The method is characterized by repeatedly performing tracking control so that the irradiation area of ​​the multi-beam follows the movement of the stage, and during each tracking control, forming a group of first and second stripe areas in which a portion of each of the first and second stripe areas overlaps, and moving the irradiation area of ​​the multi-beam between the first and second stripe areas of the same group, while drawing the group of first and second stripe areas during a single stage drive toward the drawing progress direction. Brief explanation of the drawing

[0015] FIG. 1 is a conceptual diagram showing the configuration of a drawing device in Embodiment 1. FIG. 2 is a conceptual diagram showing the configuration of a molded aperture array substrate in Embodiment 1. FIG. 3 is a cross-sectional view showing the configuration of a blanking aperture array mechanism in Embodiment 1. FIG. 4 is a conceptual diagram illustrating an example of the drawing area and the stripe area in Embodiment 1. FIG. 5 is a diagram showing an example of the irradiation area of ​​the multi-beam and the pixel to be drawn in Embodiment 1. FIG. 6 is a drawing showing an example of a beam array and a pattern being drawn in Comparative Example 1 of Embodiment 1. FIG. 7 is a drawing showing an example of a beam array and a pattern being drawn in Comparative Example 2 of Embodiment 1. FIG. 8 is a drawing showing an example of a pattern layout in Comparative Example 3 of Embodiment 1 and an example of a pattern layout after grid matching correction. FIG. 9 is a flowchart showing an example of a major process step of the drawing method in Embodiment 1. FIG. 10 is a drawing showing an example of a plurality of stripe regions in Embodiment 1 in which the angles between the longer directions are different. FIG. 11 is a drawing showing the maximum relative angle of an example of a plurality of stripe regions in Embodiment 1, in which the angles of the longer directions are different. FIG. 12 is a drawing showing another example of a plurality of stripe regions in Embodiment 1 in which the angles between the longer directions are different. FIG. 13 is a drawing showing another example of a plurality of stripe regions in Embodiment 1 in which the angles between the long directions are different. FIG. 14 is a drawing for explaining an example of a multi-beam drawing operation in Embodiment 1. FIG. 15 is a drawing showing an example of a shot sequence in Embodiment 1. FIG. 16 is a drawing showing another example of the shot sequence in Embodiment 1. FIG. 17 is a drawing showing another example of the shot sequence in Embodiment 1. FIG. 18 is a drawing showing another example of the shot sequence in Embodiment 1. FIG. 19 is a conceptual diagram showing the configuration of a drawing device in Embodiment 2. FIG. 20 is a flowchart showing an example of a major process step of the drawing method in Embodiment 2. FIG. 21 is a drawing showing an example of a plurality of stripe regions in Embodiment 2 in which the angles between the longer directions are different. FIG. 22 is a drawing showing an example of a plurality of stripe regions in Embodiment 3 in which the angles between the longer directions are different. FIG. 23 is a drawing showing another example of a plurality of stripe regions in Embodiment 3 in which the angles between the long directions are different. FIG. 24 is a drawing showing another example of a plurality of stripe regions in which the angles between the long directions in each embodiment are different. FIG. 25 is a drawing showing an example of the configuration of a deflector in each embodiment. FIG. 26 is a drawing showing another example of the configuration of the deflector in each embodiment. FIG. 27 is a drawing showing another example of the configuration of the deflector in each embodiment. Specific details for implementing the invention

[0016] In the following embodiments, a drawing apparatus and method are provided that enable drawing with multiple other beams on a pattern edge even when using a beam array in which a defective beam may exist.

[0017] In addition, the following embodiments describe a configuration using an electron beam as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam and may be a beam using charged particles such as an ion beam.

[0018] Embodiment 1.

[0019] FIG. 1 is a conceptual diagram showing the configuration of a drawing device in Embodiment 1. In FIG. 1, the drawing device (100) is equipped with a drawing mechanism (150) and a control system circuit (160). The drawing device (100) is an example of a multi-charged particle beam drawing device and also an example of a multi-charged particle beam exposure device. The drawing mechanism (150) is equipped with an electron tube (102) (electron beam column) and a drawing chamber (103). Inside the electron tube (102), an electron source (201), an illumination lens (202), a forming aperture array substrate (203), a blanking aperture array mechanism (204), a reduction lens (205), a limiting aperture substrate (206), an objective lens (207), a main deflector (208), and a sub deflector (209) are arranged.

[0020] An XY stage (105) is placed inside the drawing room (103). On the XY stage (105), a sample (101), such as a mask that serves as a substrate to be drawn during drawing (exposure), is placed. The sample (101) includes an exposure mask used when manufacturing a semiconductor device, or a semiconductor substrate (silicon wafer) on which a semiconductor device is manufactured. Additionally, the sample (101) includes mask blanks on which nothing has yet been drawn, coated with a resist. A mirror (210) for measuring the position of the XY stage (105) is also placed on the XY stage (105).

[0021] The control system circuit (160) has a control calculator (110), memory (112), deflection control circuit (130), digital-to-analog converter (DAC) amplifier unit (132, 134), lens control circuit (136), stage control mechanism (138), stage position measuring device (139), and memory device (140, 142), such as a magnetic disk device. The control calculator (110), memory (112), deflection control circuit (130), lens control circuit (136), stage control mechanism (138), stage position measuring device (139), and memory device (140, 142) are connected to each other via a bus not shown. The deflection control circuit (130) is connected to a DAC amplifier unit (132, 134) and a blanking aperture array mechanism (204). The sub-deflector (209) is composed of four or more electrodes, and each electrode is controlled by a deflection control circuit (130) through a DAC amplifier (132). The main deflector (208) is composed of four or more electrodes, and each electrode is controlled by a deflection control circuit (130) through a DAC amplifier (134). A lens group such as an illumination lens (202), a reduction lens (205), and an objective lens (207) is controlled by a lens control circuit (136).

[0022] The position of the XY stage (105) is controlled by motor drives of each axis not shown, which are controlled by a stage control mechanism (138). The stage position measuring device (139) measures the position of the XY stage (105) by the principle of laser interferometry by receiving reflected light from the mirror (210).

[0023] Within the control calculator (110), a stripe area generation unit (50), a layer switching processing unit (54), a Y-shift processing unit (56), a drawing data processing unit (70), a drawing control unit (72), and a transmission processing unit (74) are arranged. Each “part” such as the stripe area generation unit (50), the layer switching processing unit (54), the Y-shift processing unit (56), the drawing data processing unit (70), the drawing control unit (72), and the transmission processing unit (74) has a processing circuit. Such a processing circuit includes, for example, an electric circuit, a computer, a processor, a circuit board, a quantum circuit, or a semiconductor device. Each “part” may use a common processing circuit (the same processing circuit) or a different processing circuit (a separate processing circuit). Information input / output to the stripe area generation unit (50), layer switching processing unit (54), Y shift processing unit (56), drawing data processing unit (70), drawing control unit (72), and transmission processing unit (74), as well as information during operation, are stored in memory (112) at each time.

[0024] The drawing operation of the drawing device (100) is controlled by the drawing control unit (72). In other words, the drawing control unit (72) (an example of a control circuit) controls the drawing mechanism (150). Additionally, the transmission processing of the irradiation time data of each shot to the bias control circuit (130) is controlled by the transmission processing unit (74).

[0025] Additionally, drawing data (chip data) is input from outside the drawing device (100) and stored in the memory device (140). The chip data defines information on multiple shape patterns that constitute the chip pattern. Specifically, for each shape pattern, for example, the coordinates of each vertex are defined in the order in which the shape is formed. Alternatively, for each shape pattern, for example, a shape code, coordinates, and size are defined.

[0026] Here, FIG. 1 describes the configuration necessary for explaining Embodiment 1. The drawing device (100) may also be equipped with other configurations that are typically required.

[0027] FIG. 2 is a conceptual diagram showing the configuration of a molded aperture array substrate in Embodiment 1. In FIG. 2, the molded aperture array substrate (203) has holes (openings) (22) formed in a matrix shape with a predetermined array pitch, with p columns in the vertical (y-direction) × q columns in the horizontal (x-direction) (p, q≥2). In the example of FIG. 2, for instance, a case is shown where 32 × 32 columns of holes (22) are formed in the vertical (x, y) direction. The number of holes (22) is not limited to this. For instance, it is acceptable to have 512 × 512 columns of holes (22). Each hole (22) is formed as a rectangle of the same dimensions. Alternatively, it may be a circle of the same diameter. A multi-beam (20) is formed by a portion of the electron beam (200) passing through each of these multiple holes (22). In other words, the molded aperture array substrate (203) forms a multi-beam (20).

[0028] FIG. 3 is a cross-sectional view showing the configuration of a blanking aperture array mechanism in Embodiment 1. As shown in FIG. 3, a blanking aperture array mechanism (204) is configured such that a blanking aperture array substrate (31) made of a semiconductor substrate, such as silicon, is placed on a support (33). In the membrane region (330) of the central part of the blanking aperture array substrate (31), a passing hole (25) (opening) for each beam of the multi-beam (20) is opened at a position corresponding to each hole (22) of the molded aperture array substrate (203) shown in FIG. 2. Then, among the plurality of passing holes (25), a control electrode (24) and a counter electrode (26) are each placed at a position facing each other with the corresponding passing hole (25) in between. Additionally, a control circuit (41) (logic circuit) that applies a bias voltage to a control electrode (24) for each through hole (25) is disposed inside the blanking aperture array substrate (31) near each through hole (25). The opposing electrode (26) for each beam is connected to ground.

[0029] An amplifier (an example of a switching circuit) not shown is placed within the control circuit (41). As an example of the amplifier, a CMOS (Complementary MOS) inverter circuit that serves as a switching circuit is placed. At the input (IN) of the CMOS inverter circuit, either an L (low) potential (e.g., ground potential) that is lower than the threshold voltage or an H (high) potential (e.g., 1.5V) that is higher than the threshold voltage is applied as a control signal. In Embodiment 1, when the L potential is applied to the input (IN) of the CMOS inverter circuit, the output (OUT) of the CMOS inverter circuit to which the control circuit (41) is applied becomes a positive potential (Vdd), and the corresponding beam is deflected by an electric field caused by the potential difference with the ground potential of the opposing electrode (26), and the beam is controlled to be OFF by shielding with a limiting aperture substrate (206). Meanwhile, in the state where an H potential is applied to the input (IN) of the CMOS inverter circuit (active state), the output (OUT) of the CMOS inverter circuit becomes ground potential, and since the potential difference with the ground potential of the opposing electrode (26) is eliminated, the corresponding beam is not deflected, so the beam is controlled to turn ON by passing through the limiting aperture substrate (206). Blanking is controlled by this deflection.

[0030] Next, a specific example of the operation of the drawing mechanism (150) is described. An electron beam (200) emitted from an electron source (201) (emission source) illuminates the entire molded aperture array substrate (203) almost vertically by an illumination lens (202). A plurality of rectangular holes (22) (openings) are formed in the molded aperture array substrate (203), and the electron beam (200) illuminates the area containing all the plurality of holes (22). Each portion of the electron beam (200) irradiated at the location of the plurality of holes (22) passes through each of the plurality of holes (22) of the molded aperture array substrate (203), thereby forming, for example, a rectangular multi-beam (multiple electron beams) (20). This multi-beam (20) passes through each corresponding blanker of the blanking aperture array mechanism (204). Each of these blankers controls the blanking of the beams passing through individually so that the beam remains in the ON state during the set drawing time (irradiation time).

[0031] The multi-beam (20) passing through the blanking aperture array mechanism (204) is reduced by the reduction lens (205) and proceeds toward the center hole formed in the limiting aperture substrate (206). Here, the electron beam deflected by the blanker of the blanking aperture array mechanism (204) is positioned away from the center hole of the limiting aperture substrate (206) and is shielded by the limiting aperture substrate (206). Meanwhile, the electron beam not deflected by the blanker of the blanking aperture array mechanism (204) passes through the center hole of the limiting aperture substrate (206) as shown in FIG. 1. In this way, the limiting aperture substrate (206) shields each beam deflected by the blanker of the blanking aperture array mechanism (204) to a beam OFF state. Then, each beam of a single shot is formed by the beam passing through the limiting aperture substrate (206), which is formed from the time the beam is turned ON until the beam is turned OFF. The multi-beam (20) passing through the limiting aperture substrate (206) is focused by the objective lens (207) to form a pattern image of the desired reduction ratio, and the entire multi-beam (20) passing through the limiting aperture substrate (206) is deflected together in the same direction by the main deflector (208) and the sub-deflector (209), and is irradiated at each irradiation position on the sample (101) of each beam. In addition, for example, when the XY stage (105) is moving continuously, tracking control is performed by the main deflector (208) so that the irradiation position of the beam follows the movement of the XY stage (105). The multi-beam (20) irradiated at once is ideally aligned at a pitch that is the desired reduction ratio described above multiplied by the arrangement pitch of the plurality of holes (22) of the molded aperture array substrate (203).

[0032] FIG. 4 is a conceptual diagram illustrating an example of a drawing area and a stripe area in Embodiment 1. As shown in FIG. 4, the drawing area (30) (thick line) of the sample (101) is virtually divided into a plurality of rectangular stripe areas (32) with a predetermined width, for example, in the y-direction. In the example of FIG. 4, the drawing area (30) of the sample (101) is shown as being divided into a plurality of stripe areas (32) with a width substantially equal to the size of the design irradiation area (34) (drawing field) that can be irradiated by a single multi-beam (20), for example, in the y-direction. However, the direction of division is not limited to the y-direction.

[0033] In addition, the example in FIG. 4 illustrates a case where multiple drawing of multiple degrees is performed, for instance. For the first drawing process of the multiple drawing process, a first stripe layer is set, which consists of a plurality of stripe areas (32) that divide the drawing area (30).

[0034] Additionally, for the second drawing process of the multiple drawing process, a second stripe layer is set, which is composed of multiple stripe areas (37) having different angles in the long direction relative to the long direction of the corresponding stripe area (32) within the first stripe layer. A stripe area (32, 37) in which a portion of the area of ​​each of the first stripe layer and the second stripe layer overlaps is formed into a single group.

[0035] In addition, the multiplicity is not limited to 2, but may be 3 or more. In other words, the stripe layers are not limited to the first and second layers, but may be 3 or more. The angles in the longer direction can be configured differently.

[0036] FIG. 5 is a drawing showing an example of the multi-beam irradiation area and the pixel to be drawn in Embodiment 1. In the example of FIG. 5, a stripe area (32) is shown as an example among a plurality of stripe areas (32, 37) with different long-direction angles. The stripe area (37) is the same as the stripe area (32) except that the long-direction angle of the stripe area (37) is oblique.

[0037] In FIG. 5, the stripe area (32) is divided into a plurality of mesh areas, for example, by the beam size of the multi-beam (20). Each of these mesh areas becomes a pixel (36) (beam irradiation unit area, irradiation position) to be drawn. The size of the pixel (36) to be drawn is not limited to the beam size, but may be configured with any size regardless of the beam size. For example, it may be configured with a size of 1 / n of the beam size (n is an integer greater than or equal to 1). In the example of FIG. 5, the drawing area of ​​the sample (101) is shown as being divided into a plurality of stripe areas (32) with a width size substantially equal to the size of the irradiation area (34) (drawing field) that can be irradiated by one irradiation of the multi-beam (20) in the y direction, for example. The size in the x direction of the rectangular irradiation area (34) can be defined as the number of beams in the x direction × the pitch between beams in the x direction. The size of the rectangular irradiation area (34) in the y-direction can be defined as the number of beams in the y-direction × the pitch between beams in the y-direction. In the example of FIG. 5, for example, a 32×32 column multi-beam is omitted and shown as an 8×8 column multi-beam. In addition, within the irradiation area (34), multiple pixels (28) (beam drawing positions) that can be irradiated by a single shot of the multi-beam (20) are shown. The pitch between adjacent pixels (28) becomes the pitch between each beam of the multi-beam. A single sub-irradiation area (29) (pitch cell area) is formed in a rectangular area enclosed by the size of the pitch between beams in the x and y directions. In the example of FIG. 5, each sub-irradiation area (29) is shown as being composed of, for example, 4×4 pixels.

[0038] FIG. 6 is a diagram showing an example of a beam array and a pattern being drawn in Comparative Example 1 of Embodiment 1. In the example of FIG. 6, a case is shown where the center beam among the 9×9 columns of the beam array is an ON defective beam that is difficult to control. For example, when one side of the arrangement direction of the beam array and the longer direction of the stripe area are both in the x direction, if a pattern is drawn in which the side that becomes the pattern edge extends in the x direction, as shown in FIG. 6, a plurality of pixels irradiated by the defective beam are periodically arranged on the pattern edge. As a result, periodic pattern dimension errors or pattern errors occur.

[0039] FIG. 7 is a diagram showing an example of a beam array and a pattern being drawn in Comparative Example 2 of Embodiment 1. The example in FIG. 7 shows a case where the drawing is performed by tilting the direction of the extension of the exposure stripe from the direction of the extension of the pattern edge. By doing so, as shown in FIG. 7, the number of defective beams irradiated onto the pattern edge can be reduced. However, as described above, determining the direction of the pattern edge in the drawing device is not simple. Determining the edge direction of all patterns requires extensive computational processing.

[0040] FIG. 8 is a diagram showing an example of a pattern layout in Comparative Example 3 of Embodiment 1 and an example of a pattern layout after grid matching correction. In electron beam drawing, whether a single beam or a multi-beam is used, misalignment of the irradiation position due to the influence of the optical system may occur, so grid matching correction is performed to correct this during drawing. In such cases, in the pattern layout on the drawing data, even if, for example, the pattern edge extends in the x-direction, the direction of the pattern edge may change for at least some of the patterns due to grid matching correction. Therefore, as explained in FIG. 7, even if the drawing is performed in an inclined direction, a defect beam may be periodically irradiated parallel to the pattern edge as a result.

[0041] Accordingly, in Embodiment 1, multiple drawing is performed by drawing processing for multiple drawing directions. This will be explained in detail below.

[0042] FIG. 9 is a flowchart illustrating an example of a main process of a drawing method in Embodiment 1. In FIG. 9, the drawing method in Embodiment 1 performs a series of processes such as a stripe A and B generation process (S102), a multiple drawing process (S108), and a judgment process (S140).

[0043] The multiple drawing process (S108) performs, as an internal process, a stripe A shot (tracking control) process (S110), a Y shift process (S112), a stripe B shot process (S114), a Y shift reset process (S116), a tracking reset process (S118), and a judgment process (S120).

[0044] As a process for generating stripes A and B (S102), the stripe area generating unit (50) generates a plurality of stripe areas (32) (first stripe areas) in which the drawing area (30) of the sample (101) (substrate) is divided such that the longer direction is the x direction (first direction), and a plurality of stripe areas (37) (second stripe areas) in which the longer direction is divided such that it has a predetermined relative angle with respect to the x direction. In other words, the stripe area generating unit (50) generates a plurality of stripe areas (32) (first stripe areas) in which the drawing area (30) of the sample (101) (substrate) is divided such that the longer direction has a relative angle different from zero with respect to the plurality of stripe areas (32). Each first stripe area and second stripe area, in which a portion of the area overlaps, are formed as a single group.

[0045] FIG. 10 is a drawing showing an example of a plurality of stripe regions in Embodiment 1, in which the angles between the long directions are different. In the example of FIG. 10, a stripe region (32) in which the long direction extends in the x direction and a rectangular stripe region (37) in which the long direction extends in the direction of an angle θ from the x direction are shown. The two types of stripe regions (32, 37) share the position of the lower left corner. In other words, the stripe region (37) is rotated at an angle θ using the lower left corner of the stripe region (32) as a support point. The two types of stripe regions (32, 37) overlap in some areas. However, the stripe region (37) is set to a length L2 that includes at least the upper right corner of the stripe region (32). Therefore, it is appropriate for the length L2 of the stripe region (37) to be set longer than the length L1 of the stripe region (32). The width W of the stripe area (32, 37) is all set to the same size.

[0046] FIG. 11 is a drawing showing the maximum relative angle of an example of a plurality of stripe regions in Embodiment 1, in which the angles of the longer directions are different. The maximum relative angle θmax, which is the maximum value of the relative angle θ of the stripe regions (32, 37), is defined as W / L1. Accordingly, θ satisfies the following equation (1).

[0047] (1) 0<θ≤W / L1

[0048] FIG. 12 is a drawing showing another example of a plurality of stripe regions in Embodiment 1 in which the angles between the longer directions are different. In the example of FIG. 12, a rectangular stripe region (32) and a parallelogram stripe region (37) having a relative angle θ with respect to the longer direction of the stripe region (32) are shown. In the parallelogram stripe region (37), the side in the shorter direction is aligned with the side in the shorter direction of the rectangular stripe region (32). By doing so, it is possible to exclude the stripe region (37) from having an extra area that extends away from the drawing region (30).

[0049] FIG. 13 is a drawing showing another example of a plurality of stripe regions in Embodiment 1 in which the angles between the longer directions are different. In FIG. 13, the plurality of stripe regions (37) are created by offsetting a reference position relative to each of the same set of stripe regions (32). In other words, the plurality of stripe regions (37) are created at a position offset by a distance s in the y-direction relative to each corresponding stripe region (32) from the reference position (e.g., the lower left corner of the stripe region). The example in FIG. 13 shows a case where the stripe region (37) shown in FIG. 9 is created at a position offset by a distance s in the y-direction from the stripe region (32). Additionally, the example in FIG. 13 shows one of the plurality of stripe regions (32) and one of the plurality of stripe regions (37). Here, in the example of FIG. 13, the upper right corner of the corresponding stripe area (32) is not included in the stripe area (37), but the upper right corner of the stripe area (32) is included in the adjacent unillustrated stripe area (37) in the -y direction.

[0050] As a multiple drawing process (S108), the drawing mechanism (150) repeatedly performs tracking control so that the irradiation area (34) of the multi-beam (20) follows the movement of the XY stage (105). In addition, the drawing mechanism (150), together with this tracking control, during each tracking control, groups the stripe areas (32, 37) in which a portion of each of the multiple stripe areas (32) and multiple stripe areas (37) overlap, and while moving the irradiation area (34) of the multi-beam (20) between the same group of stripe areas (32, 37), draws the group of stripe areas (32, 37) during one stage drive toward the drawing progress direction.

[0051] In other words, the drawing mechanism (150) repeatedly performs tracking control so that the irradiation area (34) of the multi-beam (20) follows the movement of the XY stage (105). In addition, along with this tracking control, the drawing mechanism (150) controls the irradiation area (20) of the multi-beam (20) to move between each of the stripe areas (32, 37) among the plurality of stripe areas (32) and the plurality of stripe areas (37), each having a relative angle θ in its longer direction, during each tracking control.

[0052] Additionally, the drawing mechanism (150) draws a group of stripe areas (32, 37) during a single stage run in a direction parallel to the x direction (drawing direction) which is orthogonal to the y direction, in order to proceed with the drawing process in the drawing direction while the irradiation area (34) of the multi-beam (20) moves between the stripe areas (32, 37). Next, an example of a drawing operation will be described.

[0053] First, the XY stage (105) is moved and adjusted so that the irradiation area (34) of the multi-beam (20) is positioned at the left end of the first stripe area (32) of the first stripe layer shown in FIG. 4, or at a position further to the left. Then, when drawing the first stripe area (32), the XY stage (105) is moved, for example, in the -x direction, and the drawing is carried out in the relative x direction. The XY stage (105) is moved continuously, for example, at a constant speed. In Embodiment 1, during one pass of the XY stage (105) in the -x direction, the drawing of all first stripe areas (32, 37) of each stripe layer is performed.

[0054] Specifically, during the same tracking control, a shot for the stripe area (32) and a shot for the stripe area (37) are performed. As illustrated in FIG. 10, when transitioning from a shot for the stripe area (32) to a shot for the stripe area (37), the entire multi-beam (20) is beam deflected in the y-direction (Y-shift) so that the center of the multi-beam (20) shifts from the center position in the y-direction of the stripe area (32) to the center position in the y-direction of the stripe area (37). For example, after at least one shot for the stripe area (32) is completed, the Y-shift is performed to take at least one shot for the stripe area (37). After that, a tracking reset is performed to proceed to the next tracking control. By repeating this operation, the drawing of the first stripe area (32, 37) is performed.

[0055] After the drawing of the first stripe area (32) of each stripe layer is finished, the stage position is moved in the -y direction by the width size of the stripe area (32). By doing so, the stripe area (32) being drawn is offset in the y direction by the width size of the stripe area (32).

[0056] Next, the irradiation area (34) of the multi-beam (20) is adjusted so that it is positioned at the left end of the second stripe area (32) of the first stripe layer, or at a position further to the left. Then, by moving the XY stage (105) for example in the -x direction, the drawing is carried out in the relative x direction. By doing so, the drawing of the second stripe area (32, 37) of each stripe layer is performed. In this way, the drawing of the corresponding stripe area (32, 37) of each stripe layer is performed during one pass (one pass) of the XY stage (105) in the -x direction. Afterwards, by repeating in the same manner, the drawing of all stripe areas (32, 37) of each stripe layer is performed.

[0057] The transition of the stripe layer during each pass is performed by Y-biasing (Y-shift) by the main deflector (208) described later. By doing so, multiple drawing is performed in the areas where the stripe regions (32, 37) of each stripe layer overlap.

[0058] In addition, in one shot, a multi-beam formed by passing through each hole (22) of the molded aperture array substrate (203) forms a maximum number of multiple shot patterns equal to each hole (22) at once.

[0059] The following explains this in more detail.

[0060] As a stripe A shot (tracking control) process (S110), the drawing mechanism (150) shoots a plurality of pixels (36) onto a stripe area (32) (stripe A) located within the irradiation area (34) of the multi-beam (20) with the multi-beam (20) while tracking control.

[0061] FIG. 14 is a drawing for explaining an example of a multi-beam drawing operation in Embodiment 1. The example in FIG. 14 shows a case where each sub-irradiation area (29) is drawn with four different beams. In addition, the example in FIG. 14 shows a drawing operation in which the XY stage (105) moves continuously at a speed of L, which is a distance L equal to the 4 beam pitch, while drawing a 1 / 4 area (1 / 4 of the number of beams used for irradiation) within each sub-irradiation area (29). In the drawing operation illustrated in the example of FIG. 14, for example, while the XY stage (105) moves a distance ((L3) / 2) of 4 beam pitches, the irradiation position (pixel (36)) is shifted sequentially by the sub-deflector (209), and four shots of the multi-beam (20) are fired in the sub-irradiation area (29) within the stripe area (32) to draw (expose) four other pixels within the same sub-irradiation area (29). While drawing (exposing) these four pixels, the entire multi-beam (20) is deflected collectively by the main deflector (208) so that the irradiation area (34) does not deviate from the relative position with respect to the sample (101) due to the movement of the XY stage (105), thereby causing the irradiation area (34) to follow the movement of the XY stage (105). In other words, tracking control is performed.

[0062] As a Y shift process (S112), the layer switching processing unit (54) takes four shots of the sub-irradiation area (29) within the stripe area (32) during the same tracking control, and then controls the main deflector (208) to shift the irradiation area (34) within the stripe area (37) by beam deflecting the irradiation area (34) of the multi-beam (20) in the y-direction. As shown in FIG. 10, when transitioning from a shot of the stripe area (32) to a shot of the stripe area (37), the center of the multi-beam (20) shifts from the center position in the y-direction of the stripe area (32) to the center position in the y-direction of the stripe area (37) (Y shift). At that time, the amount of shift in the y-direction varies by the distance x from the left end (the end on the drawing start side) of the stripe area (32). Specifically, as shown in FIG. 10, the amount of shift when Y shifting is defined as xtanθ.

[0063] As a stripe B shot process (S114), the drawing mechanism (150) shoots a plurality of pixels (36) onto a stripe area (37) (stripe B) located within the irradiation area (34) of the multi-beam (20) with the multi-beam (20) while continuing tracking control.

[0064] In the example of FIG. 14, for instance, while the XY stage (105) moves a distance ((L3) / 2) of 4 beam pitches, the irradiation position (pixel (36)) is shifted sequentially by the sub-deflector (209), and four shots of the multi-beam (20) are fired in the sub-irradiation area (29) within the stripe area (37) to draw (expose) four other pixels within the same sub-irradiation area (29). While drawing (exposing) these four pixels, the entire multi-beam (20) is deflected collectively by the main deflector (208) so that the irradiation area (34) does not lose its relative position with respect to the sample (101) due to the movement of the XY stage (105), thereby causing the irradiation area (34) to follow the movement of the XY stage (105). In other words, tracking control is performed.

[0065] As a Y shift reset process (S116), the layer switching processing unit (54) takes four shots of the sub-irradiation area (29) within the stripe area (37), and then controls the main deflector (208) to reset the beam deflection in the y direction of the irradiation area (34) of the multi-beam (20) (by deflecting the beam in the -y direction) so that the irradiation area (34) within the stripe area (32) is returned.

[0066] As a tracking reset process (S118), the drawing control unit (72) resets the tracking when one tracking cycle ends and returns to the previous tracking start position. Also, since the drawing of the first pixel row from the right of each sub-irradiation area (29) has ended, after the tracking reset, in the next tracking cycle, the priority deflector (209) deflects the beam to adjust (shift) the drawing position so as to draw, for example, the second pixel row from the right of each sub-irradiation area (29) that has not yet been drawn.

[0067] As a determination process (S120), the drawing control unit (72) determines whether the multiple drawing of the target stripe area has ended. If the multiple drawing of the target stripe area has ended, the process proceeds to the determination process (S140). If the multiple drawing of the target stripe area has not ended, the process returns to the stripe A shot (tracking control) process (S110), and each process from the stripe A shot (tracking control) process (S110) to the determination process (S120) is repeated until the multiple drawing of the target stripe area is ended.

[0068] In this way, by repeating this operation during the drawing of the stripe areas (32, 37), the position of the irradiation area (34) of the sequential multi-beam (20) moves from the target stripe area (32, 37) of each stripe layer to the irradiation area (34a, 34b, 34c, …34o) shown in the lower drawing of FIG. 4, and the drawing is performed.

[0069] As a determination process (S140), the drawing control unit (72) determines whether the multiple drawing of the entire stripe area has been completed. If the multiple drawing of the entire stripe area has not been completed, the process returns to the multiple drawing process (S108), and the multiple drawing process (S108) is repeated while sequentially moving the target stripe area until the multiple drawing of the entire stripe area is completed. If the multiple drawing of the entire stripe area is completed, the drawing process is terminated.

[0070] FIG. 15 is a drawing showing an example of the shot sequence in Embodiment 1. In the example of FIG. 15, as described in the example of FIG. 14, after a shot in stripe area A (stripe area (32)), a Y shift is performed, and a shot in stripe area B (stripe area (37)) is performed. Then, after a shot in stripe area B (stripe area (37)), a Y shift reset and a tracking reset are performed. However, the shot sequence is not limited to this.

[0071] FIG. 16 is a drawing showing another example of the shot sequence in Embodiment 1. In the example of FIG. 16, after a shot in stripe area A (stripe area (32)), a Y shift is performed, and a shot in stripe area B (stripe area (37)) is performed. Then, a tracking reset is performed while continuing the Y shift. Then, in the next tracking control, after a shot in stripe area B (stripe area (37)), a Y shift reset is performed, and a shot in stripe area A (stripe area (32)) is performed. Then, a tracking reset is performed. Then, in the next tracking control, a shot in stripe area A (stripe area (32)) is performed first. In this way, shots in the same stripe area may be performed before and after the tracking reset.

[0072] FIG. 17 is a drawing showing another example of the shot sequence in Embodiment 1. In the example of FIG. 17, first, a Y shift is performed, and a shot is taken in stripe area B (stripe area (37)). Then, a Y shift reset is performed, a shot is taken in stripe area A (stripe area (32)), and a tracking reset is performed. In this way, it is acceptable to first take a shot from the inclined stripe area side.

[0073] FIG. 18 is a drawing showing another example of the shot sequence in Embodiment 1. In the example of FIG. 18, first, a Y shift is performed, and a shot is taken in stripe area B (stripe area (37)). Then, a Y shift reset is performed, a shot is taken in stripe area A (stripe area (32)), and a tracking reset is performed. Then, in the next tracking control, after the shot in stripe area A (stripe area (32)), a Y shift is performed, and a shot is taken in stripe area B (stripe area (37)). Then, a tracking reset is performed. Then, in the next tracking control, since the Y shift is already performed, a shot is taken in stripe area B (stripe area (37)). In this way, shots may be taken first from the inclined stripe area side, and shots in the same stripe area may be taken before and after the tracking reset.

[0074] In the examples of FIGS. 15 to 18, at least one shot is performed when shooting the stripe area of ​​each stripe layer. Additionally, the number of shots of the stripe area of ​​each stripe layer during the same tracking control is preferably the same, but is not limited to this. It may be a different number. By changing the number of shots for each tracking control, it is possible to perform a drawing process without leakage.

[0075] As described above, in Embodiment 1, multiple drawing is performed on multiple stripe regions (32, 37) having a relative angle θ during a single stage run (one pass). By doing so, it is possible to ensure that at least multiple different beams are used to draw the pattern edges included in any chip layout pattern, without increasing the stage turn time. Additionally, the portion where local doses within the beam array are applied to the pattern n times can be reduced to 1 / n times. Furthermore, the stripe multiplicity can be increased without changing the number of stage runs. Therefore, damage to stage components can be suppressed compared to increasing the number of passes with the same multiplicity. Consequently, the lifespan of the stage can be improved, and downtime due to periodic component replacement can be reduced.

[0076] As described above, according to Embodiment 1, even when using a beam array in which a defective beam may exist, the pattern edge can be drawn with multiple other beams.

[0077] Embodiment 2.

[0078] In Embodiment 1, the case where the arrangement direction (x direction) of the beam array is different from the longer direction of the stripe region (37) having a relative angle θ was described, but it is not limited thereto. The following description is the same as Embodiment 1, except for the specific details described below.

[0079] FIG. 19 is a conceptual diagram showing the configuration of a drawing device in embodiment 2. FIG. 19 is the same as FIG. 1 except that an electrostatic lens (212) is added and a beam array rotation processing unit (58) is added within the control calculator (110).

[0080] The electrostatic lens (212) is controlled by a deflection control circuit (130) or an electrostatic lens control circuit not shown. The electrostatic lens (212) is composed of, for example, three electrode substrates, having an opening formed in the center through which a multi-beam (20) can pass. By applying a ground (GND) potential to the first and third electrode substrates and applying a control potential to the second electrode substrate, a lens effect is generated in the multi-beam (20). As a lens effect, for example, control of rotation and / or focal position may be used. The number of electrode substrates is not limited to three stages. Two or more stages are sufficient.

[0081] Additionally, in the example of FIG. 19, the electrostatic lens (212) is shown placed between the limiting aperture substrate (206) and the negative deflector (209), but this is not limited thereto. The electrostatic lens (212) can be placed in a position where the image of the multi-beam (20) can be rotated.

[0082] Each “part,” such as the stripe area generation unit (50), layer switching processing unit (54), Y shift processing unit (56), beam array rotation processing unit (58), drawing data processing unit (70), drawing control unit (72), and transmission processing unit (74), has a processing circuit. Such processing circuits include, for example, electrical circuits, computers, processors, circuit boards, quantum circuits, or semiconductor devices. Each “part” may use a common processing circuit (the same processing circuit) or a different processing circuit (a separate processing circuit). Information input to and output from the stripe area generation unit (50), layer switching processing unit (54), Y shift processing unit (56), beam array rotation processing unit (58), drawing data processing unit (70), drawing control unit (72), and transmission processing unit (74), as well as information during operation, is stored in memory (112) at each time.

[0083] FIG. 20 is a flowchart illustrating an example of a main process step of a drawing method in Embodiment 2. In FIG. 20, the details are the same as FIG. 9, except that a Y shift & beam array rotation process (S113) is performed instead of a Y shift process (S112), and a Y shift reset & beam array rotation reset process (S117) is performed instead of a Y shift reset process (S116).

[0084] The content of the stripe A and B generation process (S102) is the same as in Embodiment 1.

[0085] As a multi-drawing process (S108), the drawing mechanism (150) repeatedly performs tracking control so that the irradiation area (34) of the multi-beam (20) follows the movement of the XY stage (105). In addition, along with this tracking control, the drawing mechanism (150) controls the irradiation area (34) of the multi-beam (20) to move between corresponding stripe areas (32, 37) that have a relative angle θ between their longer directions during each tracking control.

[0086] Additionally, the drawing mechanism (150) draws corresponding stripe areas (32, 37) together, for example, during a single stage run in the -x direction, as the irradiation area (34) of the multi-beam (20) moves between the stripe areas (32, 37). At that time, the electronic lens (212) (an example of an optical mechanism) rotates the irradiation area (34) of the multi-beam (20) according to a relative angle θ when drawing multiple stripe areas (37) compared to when drawing multiple stripe areas (32). This will be explained in detail below.

[0087] The content of the stripe A shot (tracking control) process (S110) is the same as in Embodiment 1.

[0088] FIG. 21 is a drawing showing an example of multiple stripe regions with different angles relative to the longer directions in Embodiment 2. In FIG. 21, the stripe region (32) and the stripe region (37) are the same as in FIG. 10. As in Embodiment 1, the stripe region (37) is rotated at an angle θ using the lower left corner of the stripe region (32) as a support point. The two types of stripe regions (32, 37) overlap in some areas. However, the stripe region (37) is set to a length L2 that includes at least the upper right corner of the stripe region (32). Therefore, it is appropriate for the length L2 of the stripe region (37) to be set longer than the length L1 of the stripe region (32). The width W of the stripe regions (32, 37) is set to the same size.

[0089] As a Y shift & beam array rotation process (S113), the layer switching processing unit (54) takes four shots of the sub-irradiation area (29) within the stripe area (32) during the same tracking control, and then controls the main deflector (208) to shift the irradiation area (34) within the stripe area (37) by beam deflecting the irradiation area (34) of the multi-beam (20) in the y-direction. As shown in FIG. 21, when transitioning from a shot of the stripe area (32) to a shot of the stripe area (37), the center of the multi-beam (20) shifts from the center position in the y-direction of the stripe area (32) to the center position in the y-direction of the stripe area (37) (Y shift). At that time, the amount of shift in the y-direction varies by the distance x from the left end (the end on the drawing start side) of the stripe area (32). Specifically, as illustrated in FIG. 21, the amount of shift when Y shifting is defined as xtanθ.

[0090] Additionally, the irradiation area (34) of the multi-beam (20) is rotated according to a relative angle θ by the electrostatic lens (212). By doing so, the direction of the irradiation area (34) of the multi-beam (20) can be aligned with the stripe area (37). Therefore, the irradiation area (34) (beam array area) of the multi-beam (20) does not extend beyond the stripe area (37), and when drawing the stripe area (37) next, there is no beam that does not irradiate the stripe area (37). By doing so, drawing without waste can be performed. As a result, drawing efficiency can be increased.

[0091] The content of the stripe B shot process (S114) is the same as in Embodiment 1.

[0092] As a Y shift reset & beam array rotation reset process (S117), the layer switching processing unit (54) slashes the sub-irradiation area (29) within the stripe area (37) four times, and then controls the main deflector (208) to reset the beam deflection in the y direction of the irradiation area (34) of the multi-beam (20) (by deflecting the beam in the -y direction) thereby returning the irradiation area (34) within the stripe area (32).

[0093] At that time, the electrostatic lens (212) resets the rotation of the irradiation area (34) of the multi-beam (20). By doing so, the direction of the irradiation area (34) of the multi-beam (20) can be aligned with the stripe area (32). Therefore, the irradiation area (34) (beam array area) of the multi-beam (20) does not extend beyond the stripe area (32), and when drawing the stripe area (32) next, there is no beam that does not irradiate the stripe area (32). By doing so, drawing without waste can be achieved.

[0094] The contents of the tracking reset process (S118) and the judgment process (S120) are the same as those in Embodiment 1.

[0095] As described above, according to Embodiment 2, it is possible to create a drawing that is even less wasteful than the effect of Embodiment 1.

[0096] Embodiment 3.

[0097] In each of the embodiments described above, cases were shown where there is one corresponding stripe area (32, 37) with a non-zero relative angle, but this is not limited thereto. A one-to-many relationship is also acceptable. In Embodiment 3, a case where a one-to-many corresponding stripe area is generated is described. The configuration of the drawing device (100) in Embodiment 3 is the same as in FIG. 1 or FIG. 19. In addition, a flowchart of an example of a main process of the drawing method in Embodiment 3 is the same as in FIG. 9 or FIG. 20. The following contents, except for those specifically described, are the same as Embodiment 1 or Embodiment 2.

[0098] As a process for generating stripes A and B (S102), the stripe area generating unit (50) generates a plurality of stripe areas (32) (first stripe areas) in which the drawing area (30) of the sample (101) (substrate) is divided, for example, in the y direction, and for each of the stripe areas (32) of the plurality of stripe areas (32), generates a plurality of stripe areas (37) (second stripe areas) in which a portion of the area overlaps with the corresponding stripe area (32) and the longer direction has a relative angle θ different from zero. At that time, a plurality of stripe areas (37-1, 37-2, 37-3, …) corresponding to each stripe area (32) are generated.

[0099] FIG. 22 is a drawing showing an example of a plurality of stripe regions in Embodiment 3 in which the angles between the long directions are different. In FIG. 22, a plurality of stripe regions (37-1, 37-2, 37-3, …) are shown, each having a relative angle θ with respect to the long direction of the stripe region (32). The width W of the stripe regions (32, 37-1, 37-2, 37-3, …) is set to the same size. Each stripe region (37-1, 37-2, 37-3, …) is suitable for being arranged at a predetermined period. The stripe region (37-1) shares the lower left corner of the stripe region (32) and is rotated at an angle θ using this point as a support point. The remaining stripe regions (37-2, 37-3, …) are arranged at a position offset in the x direction by a period Lx from the lower left corner of the stripe region (32). Lx <L1의 관계가 된다. 그 때문에, 각 스트라이프 영역(37-2, 37-3, …)의 좌측 하단 모서리가 스트라이프 영역(32)의 x 방향으로 연장되는 2개의 변 중 하측의 변 위에 배치되게 된다.

[0100] In this way, by creating two or more stripe regions (37-1, 37-2, 37-3, …) for one stripe region (32), the maximum angle θmax (=W / Lx) can be made larger than θmax shown in FIG. 11. In addition, the example in FIG. 22 shows a case where each stripe region (37-1, 37-2, 37-3) is formed into a parallelogram, similar to the stripe region (37) shown in FIG. 12. By doing so, parts of each stripe region (37-1, 37-2, 37-3) can be prevented from overlapping.

[0101] FIG. 23 is a drawing showing another example of a plurality of stripe regions in Embodiment 3 in which the angles between the long directions are different. In the example of FIG. 23, each stripe region (37-1, 37-2, 37-3, …) is formed into a rectangle. Other details are the same as in FIG. 22. In the example of FIG. 23, since each stripe region (37-1, 37-2, 37-3, …) is formed into a rectangle, some of the regions overlap. Therefore, regarding these overlapping parts, it is appropriate to control them so that they are drawn on the side of the previous stripe region (e.g., stripe region (37-1)) and not drawn on the side of the subsequent stripe region (e.g., stripe region (37-2)).

[0102] The content of each process following the multiple drawing process (S108) is the same as in Embodiment 1 or Embodiment 2. In addition, the amount of shift in the y-direction in the Y-shift process (S112) varies by the distance x in the x-direction from the left end (the end on the drawing start side) of the stripe area (37-1, 2, 3). Specifically, as shown in FIG. 22, the amount of shift when Y-shifting is defined as xtanθ. Therefore, after moving from the stripe area (37-1) to the stripe area (37-2), the Y-shift amount is reset. Similarly, after moving from the stripe area (37-2) to the stripe area (37-3), the Y-shift amount is reset. By doing so, the maximum value of the Y-shift amount can be reduced.

[0103] As described above, according to Embodiment 3, the maximum relative angle θmax can be increased. In addition, compared to Embodiments 1 and 2, the maximum value of the Y shift amount can be decreased.

[0104] Here, in each of the embodiments described above, a set of two types of stripe areas (32) having relative angles θ and stripe areas [37 (37-1, 37-2, …)] is used as stripe areas with different long-direction angles, but this is not limited thereto. It is also suitable to form three or more types of stripe areas with different long-direction angles.

[0105] FIG. 24 is a drawing showing another example of multiple stripe regions in which the angles of the longer directions differ in each embodiment. FIG. 24 shows a case in which three types of stripe regions (32, 37, 39) are generated with angles in the longer directions offset by a relative angle θ. Alternatively, stripe regions with many offset angles may also be generated. In either case, the various stripe regions (32, 37, 39) can be drawn while Y-shifting during the same tracking control.

[0106] FIG. 25 is a drawing showing an example of the configuration of a deflector in each embodiment. In the example of FIG. 25, as described in FIG. 1, two stages of deflectors (a main deflector (208) and a sub-deflector (209)) are arranged. In the example of FIG. 25, for instance, the main deflector (208) performs tracking control by beam deflection of the entire multi-beam, and also deflects the multi-beam so that the irradiation area (34) of the multi-beam (20) moves between the same set of stripe areas (32, 37). In other words, the main deflector (208) performs tracking control by beam deflection of the entire multi-beam (20) (beam deflection for tracking control), and also deflects the multi-beam (20) so that the irradiation area (34) of the multi-beam (20) moves between corresponding stripe areas (32, 37) that have a relative angle θ with respect to the longer direction (beam deflection for Y shift). Additionally, the sub-deflector (209) performs beam deflection for shifting the shot position within the sub-inspection area (29). However, it is not limited to this.

[0107] FIG. 26 is a drawing showing another example of the configuration of a deflector in each embodiment. In the example of FIG. 26, a case is shown in which a single deflector (main deflector (208) or sub deflector (209)) is arranged. In this case, the single deflector performs all of the tracking control beam deflection, the Y-shift beam deflection, and the shot position shift beam deflection within the sub-irradiation area (29).

[0108] FIG. 27 is a drawing showing another example of the configuration of the deflector in each embodiment. The example in FIG. 27 shows a case where three deflectors (a main deflector (208), a sub-deflector (209), and an additional deflector) are arranged. In this case, for example, the first deflector (sub-deflector (209)) performs beam deflection for shifting the shot position within the sub-irradiation area (29). For example, the tracking control is performed by beam deflection of the entire multi-beam using the second deflector (an additional deflector) (an example of the first deflector) (beam deflection for tracking control). Then, for example, the third deflector (main deflector (208)) (an example of the second deflector) deflects the multi-beam so that the irradiation area of ​​the multi-beam moves between the same stripe areas (32, 37). In other words, for example, the multi-beam (20) is deflected so that the irradiation area (34) of the multi-beam (20) moves between corresponding stripe areas (32, 37) having a relative angle θ between the longer directions (beam deflection for Y shift).

[0109] As described above, the beam deflection for Y shift and the beam deflection for tracking control may be performed with the same deflection device or with different deflection devices.

[0110] The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the stripe area [37 (37-1, 37-2, …)] described in embodiments 2 and 3, it is suitable to create it at a position offset by a distance s in the y direction with respect to the stripe area (32), just as in the case described in FIG. 13.

[0111] In addition, the processing function described in each of the embodiments above may be executed on a computer. Furthermore, a program for executing such processing function on a computer may be stored on a non-temporary, tangible, readable recording medium, such as a magnetic disk device, for example.

[0112] In addition, although parts that are not directly necessary for the description of the present invention, such as device configurations or control methods, have been omitted from description, device configurations or control methods that become necessary can be appropriately selected and used. For example, regarding the configuration of the control unit that controls the drawing device (100), although it has been omitted from description, it is of course possible to appropriately select and use the control unit configuration that becomes necessary.

[0113] In addition, as a beam emitted from a light source, it is possible to use a beam such as a laser, and it is not limited to a charged particle beam including an electron beam.

[0114] Furthermore, all multi-beam imaging devices, multi-beam imaging methods, and programs having elements of the present invention and which can be appropriately modified by a person skilled in the art are included within the scope of the present invention.

[0115] Additional advantages and modifications will be apparent to a person skilled in the art. Accordingly, the present invention is not limited to the representative embodiments and specific details illustrated and described herein in a broader sense. Accordingly, various modifications may be made without departing from the spirit or scope of the general concept of the invention as defined by the claims and their equivalents.

Claims

Claim 1 A multi-beam drawing device characterized by comprising: a movable stage for loading a substrate to be drawn with a multi-beam; a stripe area generating circuit that generates a plurality of first stripe areas divided such that the long direction is a first direction, and a plurality of second stripe areas divided such that the long direction has a predetermined relative angle with respect to the first direction, and a drawing mechanism that, while repeatedly performing tracking control so that the irradiation area of ​​the multi-beam follows the movement of the stage, forms a group of first and second stripe areas in which a portion of each of the plurality of first stripe areas and the plurality of second stripe areas overlaps during each tracking control, and moves the irradiation area of ​​the multi-beam between the first and second stripe areas of the same group while drawing the group of first and second stripe areas during a single stage drive toward the drawing progress direction. Claim 2 A multi-beam drawing device according to claim 1, wherein the plurality of second stripe regions are each generated by offsetting a reference position with respect to the first stripe region of the same set. Claim 3 A multi-beam drawing device according to claim 1, wherein the drawing mechanism has an optical mechanism that rotates the irradiation area of ​​the multi-beam according to the relative angle when drawing the plurality of second stripe areas when drawing the plurality of first stripe areas. Claim 4 A multi-beam drawing device according to claim 1, wherein the drawing mechanism has a deflector that performs tracking control by beam deflection of the entire multi-beam, and the deflector also deflects the multi-beam so that the irradiation area of ​​the multi-beam moves between the first and second stripe areas of the same set. Claim 5 A multi-beam drawing device according to claim 1, wherein the drawing mechanism comprises a first deflector that performs tracking control by beam deflection of the entire multi-beam, and a second deflector that deflects the multi-beam so that the irradiation area of ​​the multi-beam moves between the first and second stripe areas of the same set. Claim 6 A multi-beam drawing method characterized by comprising: a step of loading a substrate to be drawn with a multi-beam on a movable stage; a step of generating a plurality of first stripe areas divided such that the longer direction is a first direction, and a plurality of second stripe areas divided such that the longer direction has a predetermined relative angle with respect to the first direction, wherein the drawing area of ​​the substrate is repeatedly tracked so that the irradiation area of ​​the multi-beam follows the movement of the stage, and wherein, during each tracking control, a first and second stripe area is formed in such a way that a portion of each of the plurality of first stripe areas and the plurality of second stripe areas overlaps, and the irradiation area of ​​the multi-beam is moved between the first and second stripe areas of the same set, and the step of drawing the set of first and second stripe areas during a single stage drive toward the drawing progress direction.

Images