Susceptor rings for use in reactor systems, susceptor ring assemblies including susceptor rings, and related methods

Abstract

A susceptor ring assembly and a reactor system for injecting gas into a reaction chamber are provided. The susceptor ring assembly comprises a susceptor plate, a side member, and a susceptor ring having a gas channel. The susceptor is seated within the susceptor opening to support a substrate. A first gas outlet injects a first gas flow perpendicular to a second gas flow injected from an injection flange, and both the first gas flow and the second flow are controlled independently of each other. A method for injecting gas into the reaction chamber comprises the steps of: seating a substrate on the susceptor ring; supplying gas to an injector tube; flowing the gas through the injector tube into an injection channel; and injecting the gas from the channel onto the substrate. The reactor system comprises the reaction chamber, the susceptor ring assembly, and the injector tube, which allow for independent control of the gas flow.

Description

Technology Field

[0001] The present disclosure relates to an apparatus, system, and method generally used for forming electronic devices. More specifically, the present disclosure relates to an apparatus, system, and method suitable for gas injection during substrate processing. Background Technology

[0002] Gas reactors, such as chemical vapor deposition (CVD) reactors, can be used in various applications including depositing and / or etching materials on a substrate surface and cleaning the substrate surface. For example, gas reactors can be used to deposit an epitaxial layer on a substrate to form devices such as semiconductor devices, flat panel display devices, photovoltaic devices, and microelectromechanical systems (MEMS).

[0003] A conventional gas phase epitaxial reactor system comprises a reaction chamber, one or more precursor and / or reaction gas sources fluidly coupled to the reaction chamber, one or more carrier and / or purge gas sources fluidly coupled to the reaction chamber, a gas injection system for delivering gases (e.g., precursor and / or reaction gases and / or carrier or purge gas) to the reaction chamber, a susceptor for holding and heating a substrate, and an exhaust source fluidly coupled to the reaction chamber. Additionally, the epitaxial reactor system may include one or more heaters (e.g., lamps) and / or temperature measuring elements (e.g., thermocouples).

[0004] During deposition, such as epitaxial deposition, particularly during the deposition of doped or multicomponent films, it is often desirable to control film properties, such as the thickness and composition of the deposited film, up to the outer edge of the substrate (e.g., approximately 5% to 15% of the outermost radius). In conventional methods and systems, such control can be difficult. Therefore, improved methods and systems are required.

[0005] Any discussion, including the discussion of problems and solutions presented in this section, is included in this disclosure merely for the purpose of providing context for the present disclosure and should not be construed as an acknowledgment that any part or all of such discussion was known at the time the present invention was made or otherwise constitutes prior art.

[0006] The content of the present invention may introduce various concepts in a simplified form, which may be explained in more detail below. The content of the present invention is not intended to necessarily distinguish the main or essential features of the claimed essence, nor is it intended to be used to limit the scope of the claimed essence.

[0007] Various embodiments of the present disclosure relate to apparatus, systems, methods, and / or other processes that are suitably improved for depositing materials on the surface of a substrate. While the ways in which various embodiments of the present disclosure address the problems of prior methods and systems are discussed in more detail below, generally, various embodiments of the present disclosure provide methods and systems that can be used, for example, to deposit epitaxial materials in a more controlled manner. For example, exemplary apparatus, systems, and methods may be used to reduce and control roll-up and / or roll-down at the outer edges of the substrate while processing the substrate. Examples of the present disclosure may provide improved uniformity, such as film thickness and / or composition.

[0008] As described in detail below, and according to the examples of the present disclosure, a susceptor ring is disclosed comprising a susceptor plate having a first side member comprising one or more internal gas channels. Each internal gas channel may be fluidly in communication with an internal injection channel. Such injection channels may extend from the internal gas channel to one or more outlets located on the internal edge of the first side member. In various embodiments, the first side member extends from the upper surface of the susceptor plate, and the internal injection channel forms an angle below the plane of the susceptor plate. This configuration of the susceptor ring, the susceptor, and the substrate allows the gas injected through the outlet to be guided downward toward the substrate seated on the susceptor within the susceptor plate. The ability to control not only the flow rate but also the flow direction of the process gas injected from the susceptor ring enables the adjustment of various characteristics across the substrate being processed. For example, the dopant concentration near the wafer edge can be varied by the flow of one or more precursors injected near the wafer edge from the outlet of a side member of the susceptor plate. Additionally, this gas injection can provide greater control or facilitate the acquisition of a desired flow profile for processes (e.g., deposition and / or etching) on ​​the outer edge of the substrate, where issues such as roll-up and roll-down may occur. This gas injection can provide additional significant advantages in reducing non-uniformity of the deposited or etched film and / or providing a desired flow profile.

[0009] According to an exemplary embodiment, a susceptor ring for use in a reactor system is provided, wherein the susceptor ring comprises: a susceptor plate having an upper surface and a lower surface, a first side member extending from the upper surface, and a susceptor opening extending from the upper surface to the lower surface and configured to receive a susceptor configured to support a substrate; a first gas channel disposed within the first side member, wherein the first gas channel is configured to be coupled with a first injector tube to supply gas to the first gas channel; and a first injection channel disposed within the first side member at a first injection angle, wherein the first injection channel extends from the first gas channel to a first gas outlet disposed at a first inner edge of the first side member.

[0010] In some embodiments, the susceptor plate comprises a single monolithic body.

[0011] In some embodiments, the first injection angle is 5 to 35 degrees.

[0012] In some embodiments, the susceptor plate further includes a second side member that is spaced longitudinally from the first side member and extends from the upper surface of the susceptor plate.

[0013] In some embodiments, the susceptor ring further comprises a second gas channel disposed within the susceptor plate and a second injection channel disposed within the susceptor plate at a second injection angle, the second gas channel is configured to be coupled with a second injector tube to supply gas to the second gas channel, and the second injection channel extends from the second gas channel to a second gas outlet disposed at a second inner edge of the second side member.

[0014] In some embodiments, the second injection angle is 5 to 35 degrees.

[0015] In some embodiments, the first gas outlet and the second gas outlet are positioned laterally opposite each other on both sides of the susceptor opening.

[0016] According to an exemplary embodiment, a reactor system is provided, wherein the reactor system comprises: a reaction chamber including an injection end coupled to an injection flange and an exhaust end coupled to an exhaust flange; a susceptor ring assembly disposed within the reactor, wherein the susceptor ring assembly comprises a monolithic susceptor ring having an upper surface and a lower surface, a first side member extending from the upper surface, a susceptor plate having a susceptor opening extending from the upper surface to the lower surface, a first gas channel disposed within the first side member, and a first injection channel disposed within the first side member at a first injection angle and extending from the first gas channel to a first gas outlet disposed at a first inner edge; a first injector tube coupled to the first gas channel and at least partially disposed within the first gas channel; and a susceptor configured to be at least partially disposed within the susceptor opening and to support a substrate. In this example, the first gas outlet is configured to independently provide a first flow of gas into the reaction chamber, and the injection flange is configured to independently provide a second flow of gas into the reaction chamber, and the first flow is substantially perpendicular to the second flow.

[0017] In some embodiments, the reactor system further comprises a gas source system fluidly coupled to a first injector tube and an injection flange, and the gas source system comprises a first flow controller for controlling a first flow and a second flow controller for controlling a second flow.

[0018] In some embodiments, the gas source system includes a dopant gas source, and the gas supplied to the first injector tube and the injection flange is the dopant gas.

[0019] In some embodiments, the first injection angle is 5 to 35 degrees.

[0020] In some embodiments, the susceptor plate further comprises a second side member spaced longitudinally from the first side member and extending from the upper surface, a second gas channel disposed within the susceptor plate, and a second injection channel disposed within the susceptor plate at a second injection angle, wherein the second injection channel extends from the second gas channel to a second gas outlet disposed at a second inner edge of the second side member.

[0021] In some embodiments, the reactor system further includes a second injector tube coupled to a second gas channel and at least partially disposed within the second gas channel.

[0022] In some embodiments, the first gas outlet and the second gas outlet are positioned laterally opposite each other on both sides of the susceptor opening.

[0023] According to an exemplary embodiment, a method for injecting gas into a reaction chamber is provided, the method comprising the step of placing a substrate on a susceptor ring assembly within a reaction chamber of a reactor system, wherein the susceptor ring assembly comprises: a susceptor plate having an upper surface and a lower surface, a first side member extending from the upper surface, and a susceptor opening extending from the upper surface to the lower surface; a first gas channel disposed within the first side member; and a first injection channel disposed within the first side member at a first injection angle and extending from the first gas channel to a first gas outlet disposed at a first inner edge; a monolithic susceptor ring comprising: a first injector tube coupled to the first gas channel and disposed at least partially within the first gas channel; and a rotatable susceptor disposed at least partially within the susceptor opening; the step of supplying gas to the first injector tube disposed at least partially within the first gas channel; and the step of flowing the gas supplied from the first injector tube into the first injection channel. The method includes the step of injecting a first flow of gas supplied from a first injection channel onto a substrate seated on a rotatable susceptor of a susceptor ring assembly from a first gas outlet; and the step of injecting a second flow of gas from an injection flange coupled to a reaction chamber.

[0024] In some embodiments, the first flow of gas is substantially perpendicular to the second flow of gas.

[0025] In some embodiments, a first flow of gas is independently controlled by a first flow controller, and a second flow of gas is independently controlled by a second flow controller.

[0026] In some embodiments, the gas includes a dopant gas.

[0027] In some embodiments, the first injection angle is 5 to 35 degrees, and the dopant gas is injected downward toward and across the substrate through the first gas outlet.

[0028] In some embodiments, the monolithic susceptor ring further comprises a second gas channel disposed within a susceptor plate, wherein the second gas channel is configured to be coupled with a second injector tube to supply gas to the second gas channel, and a second injection channel disposed within the susceptor plate at a second injection angle, wherein the second injection channel extends from the second gas channel to a second gas outlet disposed at a second inner edge of a second side member; and the second gas outlet injects a third flow of gas into a reaction chamber.

[0029] Specific objects and benefits of the present invention have been described herein to explain the advantages achieved compared to the prior art. Of course, it should be understood that not all such objects or benefits may necessarily be achieved according to any specific embodiment of the present invention. Accordingly, for example, those skilled in the art will recognize that the present invention may be implemented or practiced in a manner that achieves or optimizes one of the benefits or benefits taught or suggested herein, and may not necessarily achieve other objects or benefits taught or suggested herein.

[0030] All of these embodiments are intended to be within the scope of the invention as disclosed herein. These and other embodiments will be readily apparent to those skilled in the art from the following detailed description of specific embodiments with reference to the accompanying drawings, and the invention is not limited to any specific embodiment(s) disclosed. Brief explanation of the drawing

[0031] A more complete understanding of exemplary embodiments of the present disclosure can be derived by referring to the detailed description of the invention and the claims when considered in conjunction with the following exemplary drawings. FIG. 1 illustrates an isometric view of a section of an exemplary reactor system comprising a susceptor ring assembly having a susceptor ring according to an exemplary embodiment of the present disclosure. FIG. 2 illustrates a plan view of a susceptor ring assembly including a susceptor ring according to one or more embodiments of the present disclosure. FIG. 3 illustrates a cross-sectional view of a susceptor ring according to one or more embodiments of the present disclosure. FIG. 4 illustrates an enlarged cross-sectional view of a portion of a susceptor ring according to one or more embodiments of the present disclosure. FIG. 5 illustrates an enlarged cross-sectional view of a portion of a susceptor ring according to one or more embodiments of the present disclosure. FIG. 6 illustrates a plan view of a reactor system comprising a reaction chamber having a susceptor ring disposed therein according to one or more embodiments of the present disclosure. FIG. 7 illustrates an exemplary method for injecting gas into a reaction chamber according to one or more embodiments of the present disclosure. Specific details for implementing the invention

[0032] The description of exemplary embodiments of the system and method provided below is for illustrative purposes only and solely for illustrative purposes. The following description is not intended to limit the scope of the present disclosure or claims. Furthermore, the reference to multiple embodiments having the indicated features or steps is not intended to exclude other embodiments having additional features or steps or other embodiments including other combinations of the specified features or steps.

[0033] As used herein, the terms “layer” and / or “film” may be used interchangeably and may refer to any continuous or discontinuous structure and material, such as a material deposited by the method disclosed herein. For example, a layer may comprise a two-dimensional material, a three-dimensional material, nanoparticles, a partial or whole molecular layer or a partial or whole atomic layer or an atomic and / or molecular cluster. A layer may be partially or wholly composed of a plurality of dispersed atoms embedded on and / or within the surface of a substrate or embedded in a device fabricated on the substrate. A layer may comprise a material or layer having pinholes and / or isolated islands. A layer may be at least partially continuous. A layer may be patterned, e.g., subdivided, and may be included in a plurality of semiconductor devices.

[0034] As used herein, the term “gas” may include materials that are gases, vaporized solids, and / or vaporized liquids at normal temperature and pressure (NTP), and may consist of a single gas or a mixture of gases depending on the context. Gases other than process gases, i.e., gases introduced without passing through gas distribution assemblies, other gas distribution devices, etc., may be used, for example, to seal the reaction space and may include sealing gases. Precursors and reactants may be gases. Exemplary sealing gases include return gases, nitrogen, etc. In some cases, the term “precursor” may refer to a compound that participates in a chemical reaction to produce another compound, and specifically a compound that constitutes the main framework or membrane matrix of the membrane. Additionally, the term “reactant” may be used interchangeably with the term “precursor.”

[0035] As used herein, the term “epitaxial layer” may refer to a layer that is substantially single-crystalline directly on a substantially single-crystalline substrate or layer placed underneath.

[0036] As used herein, the term “chemical vapor deposition” may refer to any process in which a substrate is exposed to one or more volatile precursors (as well as optional additional process gases) that react and / or decompose on the surface of the substrate to produce a desired deposition.

[0037] It should be noted that while a number of exemplary materials are presented throughout the embodiments of the present disclosure, the chemical formula given for each exemplary material should not be interpreted as restrictive, and the non-restrictive exemplary materials presented should not be limited by the given exemplary stoichiometry.

[0038] As used herein, the “structure” may be or include the substrate described herein. The structure may include one or more layers disposed on the substrate, such as one or more layers formed according to the method described herein.

[0039] In the present disclosure, any two numeric values ​​of a variable may constitute an executable range of the variable, and any indicated range may include or exclude endpoints. Additionally, any value of the indicated variable (whether indicated as “approximately”) may refer to an exact value or an approximate value, may include an equivalent value, and in some embodiments may refer to an average, median, representative, majority, etc. Also, in the present disclosure, the terms “comprising,” “comprising,” and “having” may independently refer to “ordinarily or extensively comprising,” “comprising,” “essentially comprising,” or “comprising.” In the present disclosure, any defined meaning does not necessarily exclude a general and conventional meaning in some embodiments.

[0040] Now, referring to the drawings, FIGS. 1 through 5 illustrate various drawings of a susceptor ring and a susceptor ring assembly of the present disclosure. For example, FIG. 1 illustrates an isometric view of a section of an exemplary reactor system comprising a susceptor ring with a susceptor positioned thereon and a susceptor ring assembly comprising a substrate disposed on the susceptor; FIG. 2 illustrates a top view of a susceptor ring with the susceptor and substrate removed; FIG. 3 illustrates a cross-sectional view of a susceptor ring (a cross-section cut along the plane AA shown in FIG. 1); and FIGS. 4 and FIGS. 5 both illustrate enlarged cross-sectional views of a portion of a susceptor ring.

[0041] In various embodiments and with reference to FIG. 1, an exemplary reactor system (100) comprises a susceptor ring assembly (102) fluidly coupled to a gas source system (104) by, for example, a flange assembly (106) and one or more injector tube(s), such as a first injector tube (108) and / or a second injector tube (110). The injector tubes (108 and 110) are shown by dashed lines in FIG. 1 to distinguish the susceptor ring assembly (102) from other features of the reactor system (100). The susceptor ring assembly (102) comprises a susceptor ring (112) as shown alone in FIG. 2. The susceptor ring (112) may be formed, for example, from graphite or pyrolytic carbon. In a particular example, the susceptor ring (112) is manufactured from bulk graphite or pyrolytic carbon. In this example, the bulk material may be coated (or encapsulated) with silicon carbide (SiC). In a specific example, the susceptor ring (112) comprises a single monolithic body.

[0042] Referring to FIGS. 2 and 3, the susceptor ring (112) comprises a susceptor plate (114) having an upper surface (116) and a lower surface (302) (see FIG. 3). The susceptor plate (114) comprises a first side member (118) extending from the upper surface (116) of the susceptor plate (114). In a specific embodiment, the susceptor plate (114) comprises a second side member (120) extending from the upper surface (116) of the susceptor plate (114). The second side member (120) may be spaced laterally from the first side member (118) (e.g., along the X-axis as shown in FIG. 1). Additionally, the susceptor plate (114) comprises a susceptor opening (122) extending from the upper surface (116) of the susceptor plate to the lower surface (302). For example, the susceptor ring (112) may include an inner wall (304) (Fig. 3) extending along the circumference of the susceptor opening (122) from the upper surface (116) to the lower surface (302). The susceptor opening (122) placed in the susceptor plate (114) is configured and arranged to receive a susceptor (124). The susceptor (124) is configured to receive and hold a substrate (126). The outer edge of the substrate (126) may be defined as the outermost 10% of the substrate radius. For example, if the radius of the substrate (126) is 150 millimeters, the outer edge of the substrate (126) may be defined as an area within 15 millimeters of the very end (i.e., the outermost) of the substrate radius. In some cases, the outer edge may be defined as an area between about 5% and about 15% of the outer radius of the substrate (126). A change in film thickness known as roll-up or roll-down may occur at the outer edge of the substrate (126) due to a temperature difference between the center and the edge of the substrate during deposition on the upper surface of the substrate (126).

[0043] In various embodiments, the susceptor ring (112) includes a first gas channel disposed within a first side member. For example, FIG. 2 illustrates a top view of the susceptor ring (112) and includes an exemplary first gas channel (202) disposed within the first side member (118), the first gas channel (202) is shown with dashed lines to indicate that the gas channel is disposed within the first side member (118). The first gas channel (202) is configured to be coupled with a first injector tube (108). In some embodiments, the susceptor ring (112) includes a second gas channel disposed within a second side member. For example, FIG. 2 illustrates an exemplary second gas channel (204) disposed within the second side member (120), the second gas channel (204) is again shown with dashed lines to indicate that the second gas channel is disposed within the second side member (120). The second gas channel (204) is configured to be coupled with the second injector tube (110).

[0044] FIG. 3 illustrates a cross-sectional view of a susceptor ring (112) cut along the AA plane shown in FIG. 1. As shown in FIG. 3, a first injector tube (108) can be fluidly coupled with a first gas channel (202) disposed within the first side member (118). In one embodiment, the first injector tube (108) is at least partially disposed within the first gas channel (202). Likewise, in some embodiments, a second injector tube (110) is fluidly coupled with a second gas channel (204) disposed within the second side member (120). In one embodiment, the second injector tube (110) is at least partially disposed within the second gas channel (204). The gas supplied from the gas source system (104) (Fig. 1) can be transferred to the first gas channel (202) and optionally the second gas channel (204) through the injector tubes (206, 208) and to the substrate through them, as described below.

[0045] In some embodiments, the first gas channel (202) (and, if present, the second gas channel (204)) may be extended from the first edge (210) to a certain distance. For example, the first gas channel (202) (and, if present, the second gas channel) may be extended from the first edge (210) from 30 millimeters to 250 millimeters.

[0046] The dotted lines (306 and 308) of the susceptor ring assembly (102) of FIG. 3 are enlarged and illustrated in more detail in FIG. 4 and FIG. 5, respectively. For example, FIG. 4 illustrates a first side member (118) extending upward (i.e., along the Y-axis shown in FIG. 1) from the upper surface (116) of the susceptor plate (114), a susceptor opening (122), and a portion of a susceptor (124) with a substrate (126) placed on top. The first gas channel (202) is disposed within the first side member (118) as described above and is coupled to the first injector tube (206).

[0047] In various embodiments, the first injection channel is disposed within the first side member (118). Referring to FIG. 4, the first injection channel (402) extends from the first gas channel (202) to a first gas outlet (404) disposed at the first inner edge (406) of the first side member (118). The first gas outlet (404) is further illustrated in FIG. 1 and FIG. 2. In this embodiment, the first gas outlet (404) is fluidly connected to the first gas channel (202), which is eventually fluidly coupled to the first injector tube (206). In this way, the gas supplied from the gas source system (104) (Fig. 1) to the first injector tube (206) flows into the first gas channel (202) disposed within the susceptor plate (114), then flows from the first gas channel (202) to the first injection channel (402), subsequently flows through the first injection channel (402) to the first gas outlet (404), and ultimately reaches the substrate (126) supported by the susceptor (124).

[0048] In various embodiments, the first injection channel (402) is configured and arranged with a first injection angle (408) (as indicated by α in FIG. 4). The first injection angle (408) may be defined as the angle between the upper wall (410) of the first injection channel (402) and a plane parallel to the upper surface (116) of the susceptor plate (114), which is illustrated as a plane (412). In various embodiments, the first injection angle (408)(α) may be 5 to 35 degrees, 10 to 30 degrees, or 15 to 25 degrees. In some embodiments, the first injection angle (408)(α) is less than 35 degrees, less than 30 degrees, less than 25 degrees, less than 20 degrees, less than 15 degrees, less than 10 degrees, or less than 5 degrees.

[0049] As an additional example, FIG. 5 illustrates a second side member (120) extending upward (i.e., along the Y-axis shown in FIG. 1) from the upper surface (116) of the susceptor plate (114), a susceptor opening (122), and a portion of a susceptor (124) with a substrate (126) placed on top. A second gas channel (204) is disposed within the second side member (120) as described above and is coupled to a second injector tube (208).

[0050] In various embodiments, the second injection channel is disposed within the second side member (120). Referring to FIG. 5, the second injection channel (502) extends from the second gas channel (204) to a second gas outlet (504) disposed at the second inner edge (506) of the second side member (120). The second gas outlet (504) is additionally illustrated in FIG. 2. In this embodiment, the second gas outlet (504) is fluidly connected to the second gas channel (204), which is eventually fluidly coupled to the second injector tube (208). In this way, the gas supplied from the gas source system (104) (Fig. 1) to the second injector tube (208) flows into the second gas channel (204) disposed within the susceptor plate (114), then flows from the second gas channel (204) to the second injection channel (502), subsequently flows through the second injection channel (502) to the second gas outlet (504), and ultimately reaches the substrate (126) supported by the susceptor (124).

[0051] In various embodiments, the second injection channel (502) is configured and arranged with a second injection angle (508) (as indicated by β in FIG. 5). The second injection angle (508) may be defined as the angle between the upper wall (510) of the second injection channel (502) and a plane parallel to the upper surface (116) of the susceptor plate (114), which is illustrated as a plane (512). In various embodiments, the second injection angle (508)(β) may be 5 to 35 degrees, 10 to 30 degrees, or 15 to 25 degrees. In some embodiments, the second injection angle (508)(β) is less than 35 degrees, less than 30 degrees, less than 25 degrees, less than 20 degrees, less than 15 degrees, less than 10 degrees, or less than 5 degrees.

[0052] In various embodiments and with reference to FIG. 2, the first gas outlet (404) and the second gas outlet (504) are positioned laterally opposite each other on both sides of the susceptor opening (122).

[0053] Referring to FIG. 6, a plan view of an exemplary reactor system (600) according to an embodiment of the present disclosure is shown. The reactor system (600) may include a reaction chamber (602) having an injection end (604) of the reaction chamber (602) having an injection flange (606) and an exhaust end (608) of the reaction chamber (602) having an exhaust flange (610). The reactor system (600) includes a susceptor ring (112) as described above.

[0054] A substrate (126) may be provided in a reaction chamber (602) on a susceptor (124). In various embodiments, the substrate (126) may be raised onto the susceptor and lowered onto the susceptor (124) by one or more lift pins (not shown) for processing. In various embodiments, an exhaust system (not shown) is fluidly coupled to an exhaust flange (610) to remove process gas and precursors from the reaction chamber.

[0055] In various embodiments, the first gas outlet (404) of the susceptor ring (112) is configured to independently provide a first flow of gas (as indicated by the first gas flow (612)) into the reaction chamber (602), and the injection flange (606) is configured to independently provide a second flow of gas (as indicated by the second gas flow (614)) into the reaction chamber (602). In a specific example, the second gas outlet (504) of the susceptor ring (112) is configured to provide a third flow of gas (as indicated by the third gas flow (616)) into the reaction chamber (602). In some embodiments, the first flow of gas (612) is substantially perpendicular to the second flow of gas (614).

[0056] The reactor system (600) may include a gas source system (104) fluidly coupled to a first injector tube (108) (and optionally a second injector tube (110)). Additionally, the gas source system (104) may be fluidly coupled to an injection flange (606). In some embodiments, the gas source system (104) includes a first flow controller (618) configured to control a first flow (612) into the reaction chamber, and a second flow controller (620) configured to control a second flow (614) into the reaction chamber. The gas source system (104) may include one or more gas sources, such as a precursor source, a dopant source, an etchant source, etc. In a specific embodiment, the gas source system (104) includes a dopant gas source (622), and the gas supplied to the first injector tube (108) and the injection flange (606) is the dopant gas. In this example, the dopant gas may include at least one of a phosphorus dopant, a boron dopant, and an arsenic dopant.

[0057] According to an embodiment of the present disclosure, a method for injecting gas into a reaction chamber is provided. Referring to FIG. 7, an exemplary method (700) according to an embodiment of the present disclosure is illustrated.

[0058] In various embodiments, the method (700) comprises the step (step 702) of placing a substrate on a susceptor ring assembly within a reaction chamber of a reactor system, wherein the susceptor ring assembly comprises a susceptor plate having an upper surface and a lower surface, a first side member extending from the upper surface, and a susceptor opening extending from the upper surface to the lower surface; a monolithic susceptor ring comprising a first gas channel disposed within the first side member, and a first injection channel disposed within the first side member at a first injection angle and extending from the first gas channel to a first gas outlet disposed at a first inner edge.

[0059] In various embodiments, the method (700) includes the step (step 704) of supplying gas to a first injector tube that is at least partially disposed within a first gas channel.

[0060] In various embodiments, the method (700) includes the step (step 706) of flowing gas supplied from a first injector tube into a first injection channel.

[0061] In various embodiments, the method (700) includes the step (step 708) of injecting a first flow of gas supplied from a first injection channel onto a substrate mounted on a rotatable susceptor of a susceptor ring assembly from a first gas outlet.

[0062] In various embodiments, the method (700) includes the step (step 710) of injecting a second flow of gas from an injection flange coupled to a reaction chamber. In such embodiments, the first flow of gas may be substantially perpendicular to the second flow of gas. In such embodiments, the first flow of gas may be independently controlled by a first flow controller, and the second flow of gas may be independently controlled by a second flow controller. The first flow of gas and the second flow of gas may be the same gas or different gases. For example, the first flow may comprise a mixture of gases such as a silicon-containing precursor, a germanium-containing precursor, a dopant-containing precursor, and / or an etchant as described above. In certain examples, the gas comprises a dopant gas such as a phosphorus dopant, a boron dopant, or an arsenic dopant.

[0063] The exemplary embodiments of the foregoing disclosure do not limit the scope of the invention, for these embodiments are merely examples of embodiments of the invention as defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to be within the scope of the invention. In fact, in addition to what is shown and described herein, various variations of the disclosure, such as alternative useful combinations of the described elements, may become apparent from the description to those skilled in the art. Such variations and embodiments are also intended to be within the scope of the appended claims.

Claims

Claim 1 A susceptor ring for use in a reactor system, wherein the susceptor ring comprises: a susceptor plate having an upper surface and a lower surface, a first side member extending from the upper surface, and a susceptor opening extending from the upper surface to the lower surface and configured to receive a susceptor configured to support a substrate; a first gas channel disposed within the first side member, wherein the first gas channel is configured to be coupled with a first injector tube to supply gas to the first gas channel; and a first injection channel disposed within the first side member at a first injection angle, wherein the first injection channel extends from the first gas channel to a first gas outlet disposed at a first inner edge of the first side member. Claim 2 In claim 1, the susceptor plate comprises a single monolithic body, forming a susceptor ring. Claim 3 A susceptor ring according to paragraph 2, wherein the first injection angle is 5 to 35 degrees. Claim 4 A susceptor ring according to paragraph 3, wherein the susceptor plate further comprises a second side member that is spaced longitudinally from the first side member and extends from the upper surface of the susceptor plate. Claim 5 A susceptor ring according to claim 4, further comprising a second gas channel disposed within the susceptor plate and a second injection channel disposed at a second injection angle within the susceptor plate, wherein the second gas channel is configured to be coupled with a second injector tube to supply gas to the second gas channel, and the second injection channel extends from the second gas channel to a second gas outlet disposed at a second inner edge of the second side member. Claim 6 In claim 5, the susceptor ring, wherein the second injection angle is 5 to 35 degrees. Claim 7 In claim 6, the first gas outlet and the second gas outlet are positioned laterally opposite each other on both sides of the susceptor opening, forming a susceptor ring. Claim 8 A reactor system comprising: a reaction chamber including an injection end coupled to an injection flange and an exhaust end coupled to an exhaust flange; and a susceptor ring assembly disposed within the reactor, wherein the susceptor ring assembly is A susceptor ring assembly comprising a monolithic susceptor ring, the susceptor ring comprising an upper surface and a lower surface, a first side member extending from the upper surface, a susceptor plate having a susceptor opening extending from the upper surface to the lower surface, a first gas channel disposed within the first side member, and a first injection channel disposed within the first side member at a first injection angle and extending from the first gas channel to a first gas outlet disposed at a first inner edge; a first injector tube coupled to the first gas channel and disposed at least partially within the first gas channel; and a susceptor disposed at least partially within the susceptor opening and configured to support a substrate, wherein the first gas outlet is configured to independently provide a first flow of gas into the reaction chamber, and the injection flange is configured to independently provide a second flow of gas into the reaction chamber, and the first flow is substantially perpendicular to the second flow. Claim 9 A reactor system according to claim 8, further comprising a gas source system fluidly coupled to the first injector tube and the injection flange, wherein the gas source system comprises a first flow controller for controlling the first flow and a second flow controller for controlling the second flow. Claim 10 In claim 9, the gas source system comprises a dopant gas source, and the gas supplied to the first injector tube and the injection flange is the dopant gas, a reactor system. Claim 11 A reactor system according to claim 8, wherein the first injection angle is 5 to 35 degrees. Claim 12 A reactor system according to claim 11, wherein the susceptor plate further comprises a second side member spaced longitudinally from the first side member and extending from the upper surface, a second gas channel disposed within the susceptor plate, and a second injection channel disposed within the susceptor plate at a second injection angle, wherein the second injection channel extends from the second gas channel to a second gas outlet disposed at a second inner edge of the second side member. Claim 13 A reactor system according to claim 12, further comprising a second injector tube coupled to the second gas channel and at least partially disposed within the second gas channel. Claim 14 A reactor system according to claim 13, wherein the first gas outlet and the second gas outlet are positioned laterally opposite each other on both sides of the susceptor opening. Claim 15 A method for injecting gas into a reaction chamber, wherein the method comprises the step of placing a substrate on a susceptor ring assembly within the reaction chamber of a reactor system, and wherein the susceptor ring assembly is A monolithic susceptor ring comprising: an upper surface and a lower surface, a first side member extending from the upper surface, and a susceptor opening extending from the upper surface to the lower surface; a first gas channel disposed within the first side member; and a first injection channel disposed within the first side member at a first injection angle and extending from the first gas channel to a first gas outlet disposed at a first inner edge; A first injector tube coupled to the first gas channel and disposed at least partially within the first gas channel; A method comprising: a rotatable susceptor comprising at least partially disposed within the susceptor opening; a first injector tube comprising at least partially disposed within the first gas channel; a first injector tube comprising at least partially disposed within the first gas channel; a first flow of the gas supplied from the first injector tube into the first injection channel; a first flow of the gas supplied from the first injection channel into the substrate seated on the rotatable susceptor of the susceptor ring assembly from the first gas outlet; and a second flow of the gas into the reaction chamber from an injection flange coupled thereto. Claim 16 A method according to paragraph 15, wherein the first flow of the gas is substantially perpendicular to the second flow of the gas. Claim 17 A method according to claim 16, wherein the first flow of the gas is independently controlled by a first flow controller, and the second flow of the gas is independently controlled by a second flow controller. Claim 18 In paragraph 17, the method wherein the gas comprises a dopant gas. Claim 19 A method according to claim 18, wherein the first injection angle is 5 to 35 degrees, and the dopant gas is injected downward toward and across the substrate through the first gas outlet. Claim 20 In claim 19, the monolithic susceptor ring comprises a second gas channel disposed within the susceptor plate, wherein the second gas channel is configured to be coupled with a second injector tube to supply the gas to the second gas channel; and a second injection channel disposed within the susceptor plate at a second injection angle, wherein the second injection channel further comprises a second injection channel extending from the second gas channel to a second gas outlet disposed at a second inner edge of a second side member, wherein the second gas outlet injects a third flow of the gas into the reaction chamber.

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