Electrochemical mechanical polishing apparatus
Patent Information
- Application Number
- KR1020250048284
- Authority / Receiving Office
- KR · KR
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-04-14
- Publication Date
- 2026-10-21
Smart Images
Figure PAT00001_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to an electrochemical mechanical polishing device. Background Technology
[0002] Generally, the Chemical Mechanical Planarization (CMP) process used in the process of polishing semiconductor wafers is also known as the chemical mechanical planarization process. In the CMP process, a device is utilized that mechanically polishes the wafer by mutual rotational movement while a polishing head, to which the wafer is attached, is pressurized at a constant pressure onto a polishing pad mounted on a platen, and simultaneously chemically polishes the wafer by injecting a slurry containing a chemical solution that reacts abrasive particles with the metal surface.
[0003] However, during the CMP process, the polishing head holds the wafer with physical force and proceeds with the process. Since high air pressure must be applied to the retainer ring of the polishing head for this purpose, a pad rebound phenomenon occurs at the edge of the wafer, and furthermore, there is a problem in that it becomes difficult to control the removal rate at the edge of the wafer.
[0004] Recently, the Electrochemical Mechanical Planarization (ECMP) process has emerged. Although the basic configuration of the ECMP device is the same as that of CMP, it features a cathode on the platen and an anode on the wafer, utilizes a conductive polishing pad, and injects an electrolyte between the wafer and the pad. Electrochemical reactions occur between the electrodes and the electrolyte, transforming the metal surface of the wafer into a state that is easy to electrochemically polish. Simultaneously, the electrochemically transformed metal surface is mechanically polished by the pressure and rotation applied by the polishing head, resulting in excellent polishing efficiency even at low polishing pressure.
[0005] At this time, there is a need to develop an ECMP device that can more effectively improve the problems of the CMP process as described above by improving electric field control to control the slurry, eliminating the pad rebound phenomenon at the edge of the wafer, and controlling the edge removal rate. The problem to be solved
[0006] One of the technical problems that the technical concept of the present invention aims to solve is to provide an electrochemical mechanical polishing device capable of effectively controlling the flow of slurry supplied onto a polishing pad.
[0007] One of the technical problems that the technical concept of the present invention aims to solve is to provide an electrochemical mechanical polishing device that can reduce rebound phenomena at the edge of the wafer by supplying the slurry supplied onto the polishing pad sufficiently and evenly to the edge of the wafer. means of solving the problem
[0008] An electrochemical mechanical polishing device according to one embodiment of the present invention may include a platen, a polishing pad comprising a first pad portion disposed on the upper part of the platen and including a groove formed concavely inwardly on the upper surface, a conductive portion of a conductive material and a non-conductive portion of a non-conductive material, and a second pad portion disposed on the lower part of the first pad portion and including a conductive material, a polishing head disposed on the upper part of the polishing pad and pressing the wafer, a retainer ring comprising a conductive material that supports the wafer, and an electrode disposed on the lower part of the polishing pad and connected to the second pad portion.
[0009] An electrochemical mechanical polishing device according to another embodiment of the present invention may include a platen, a polishing pad comprising a first pad portion made of a conductive material that is disposed on the upper part of the platen and includes a groove that is concave inwardly on the upper surface, and a second pad portion made of a conductive material disposed on the lower part of the first pad portion, a polishing head disposed on the upper part of the polishing pad and pressurizing the wafer, a retainer ring that supports the wafer and includes a conductive material, and an electrode disposed between the platen and the polishing pad and electrically connected to the second pad portion.
[0010] An electrochemical mechanical polishing device according to another embodiment of the present invention may include a platen, a polishing pad comprising a first pad portion disposed on the upper part of the platen and having a groove concave inwardly on the upper surface and having a conductive material, a second pad portion disposed on the lower part of the first pad portion and having a non-conductive material, a retainer ring that supports a wafer and has a conductive material, a polishing head disposed on the upper part of the polishing pad and pressing the wafer, and an electrode connected to the first pad portion. Effects of the invention
[0011] The electrochemical mechanical polishing device according to embodiments of the present invention is configured such that the retainer ring comprises a conductive material, so that when current and voltage are applied through the electrode, an electric field is generated in the retainer ring, and by controlling the electric field generated through the adjustment of the applied current and voltage, the flow of the slurry can be effectively controlled when the slurry is introduced or discharged between the polishing pad and the retainer ring.
[0012] In addition, the electrochemical mechanical polishing device according to the embodiments of the present invention is configured such that the first pad portion of the polishing pad includes a conductive material, thereby allowing an electric field to be generated in the polishing pad when current and voltage are applied through the electrode. Furthermore, by controlling the electric field generated through the adjustment of the applied current and voltage so that the slurry is supplied sufficiently and evenly to the edge portion of the wafer, the rebound phenomenon at the edge portion of the wafer during the ECMP process can be reduced, and the wafer edge removal rate can be effectively controlled.
[0013] The various and beneficial advantages and effects of the present invention are not limited to those described above and will be more easily understood in the process of explaining specific embodiments of the present invention. Brief explanation of the drawing
[0014] FIG. 1 is a perspective view illustrating an electrochemical mechanical polishing device according to one embodiment of the present invention. Figure 2 shows a top view of the electrochemical mechanical polishing device of Figure 1. FIG. 3a is a cross-sectional view showing an electrochemical mechanical polishing device according to one embodiment of the present invention as viewed from the I-I' direction of FIG. 1. FIG. 3b is a cross-sectional view showing an electrochemical mechanical polishing device according to another embodiment of the present invention as viewed from the I-I' direction of FIG. 1. FIG. 4 is a cross-sectional view showing a retainer ring according to embodiments of the present invention as viewed from the direction II-II' of FIG. 3a. FIG. 5 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1. FIG. 6 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1. FIG. 7 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1. FIG. 8 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1. FIG. 9 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1. FIG. 10 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1. FIG. 11 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1. FIG. 12 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1. FIG. 13 is a cross-sectional view showing a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, viewed from the I-I' direction of FIG. 1. FIG. 14a is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a plan view showing the polishing pad as viewed from above. FIG. 14b is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 14c is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 15a is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 15b is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 15c is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 16a is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 16b is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. FIG. 16c is a cross-sectional view showing an electrochemical mechanical polishing apparatus including electrodes according to other embodiments of the present invention as viewed from the direction I-I' of FIG. 1, and a top view showing the polishing pad. Specific details for implementing the invention
[0015] Hereinafter, preferred embodiments of the present invention will be described as follows with reference to the attached drawings.
[0016] FIG. 1 is a perspective view illustrating an electrochemical mechanical polishing apparatus according to one embodiment of the present invention. FIG. 2 illustrates the electrochemical mechanical polishing apparatus of FIG. 1 viewed from above.
[0017] Referring to FIGS. 1 and 2, an electrochemical mechanical polishing device (10) may be a stationary device for performing an ECMP (Electrochemical Mechanical Planarization) process on a wafer (W). In this case, the electrochemical mechanical polishing device (10) may include a platen (100), a polishing pad (200), a polishing head (300), and an electrode (500). Additionally, the electrochemical mechanical polishing device (10) may further include a conditioning module (400) and a slurry supply unit (not shown).
[0018] The platen (100) may be rotatably installed on a rotation axis (not shown). The upper portion of the platen (100) may have a circular plate shape. The platen (100) may be driven to rotate in a predetermined rotational direction (R) by the rotation axis. The platen (100) may be rotated, for example, clockwise, but is not limited thereto. A polishing pad (200) may be disposed on the upper surface of the platen (100).
[0019] The polishing pad (200) can perform mechanical polishing on the wafer (W) by directly contacting the surface of the wafer (W). At this time, the polishing pad (200) may include a first pad portion (210) and a second pad portion (220).
[0020] The first pad portion (210) can come into contact with the aforementioned surface of the wafer (W). A polishing layer (not shown) for polishing the wafer (W) may be provided on the upper surface of the first pad portion (210).
[0021] Additionally, a groove (210a) may be provided on the upper surface of the first pad portion (210). The groove (210a) may be a passage for smoothly discharging a processing liquid, such as a slurry (S), supplied to the surface of the polishing pad (200).
[0022] The groove (210a) may be formed in a concave shape from the upper surface of the first pad portion (210) toward the inner side of the first pad portion (210). More specifically, the groove (210a) may be formed to extend downward (-Z) relative to the upper surface of the first pad portion (210). At this time, the groove (210a) may have a predetermined depth (L).
[0023] Additionally, the groove (210a) may be formed over the entire upper surface of the first pad portion (210). For example, the groove (210a) may extend in various directions radially outward from the center of the first pad portion (210) on the upper surface of the first pad portion (210). The groove (210a) may have a radial shape, for example, but is not limited thereto.
[0024] The first pad portion (210) can be stacked on the second pad portion (220). More specifically, the second pad portion (220) can be coupled to the upper surface of the platen (100). And, the first pad portion (210) can be coupled to the upper surface of the second pad portion (220).
[0025] The first pad portion (210) and the second pad portion (220) may have various shapes. For example, the first pad portion (210) and the second pad portion (220) may be provided in the shape of circular plates having the same or similar diameters. The first pad portion (210) and the second pad portion (220) may include at least partially a conductive material, which will be described later.
[0026] A polishing head (300) is positioned on the upper part of a platen (100) to bring a wafer (W) into contact with a polishing pad (200). At this time, the polishing head (300) may include a head portion (310) and a retainer ring (320).
[0027] The retainer ring (320) can be connected to the lower portion of the head portion (310). The retainer ring (320) can be provided to protrude downward (-Z) from the lower surface of the head portion (310). The wafer (W) can be received and supported inside the retainer ring (320).
[0028] The polishing head (300) can be rotated in a certain direction by means of a rotation axis (330) and a driving unit (not shown) connected thereto. The polishing head (300) can be rotated in the same rotational direction (R) as the platen (100), for example, but is not limited thereto.
[0029] The wafer (W) is supported by the lower surface of the head portion (310) and the retainer ring (320), and can come into contact with the polishing pad (200) while rotating together with the polishing head (300) when the latter rotates. In this manner, mechanical polishing can be performed as the wafer (W) comes into contact with the polishing pad (200).
[0030] Meanwhile, the polishing head (300) may further include a moving part (not shown) connected to a rotation axis (330). By the moving part, the polishing head (300) can be moved between the upper and outer sides of the platen (100). Additionally, the moving part is equipped with a vacuum line (not shown) so that the wafer (W) can be adsorbed and fixed when the polishing head (300) moves. Additionally, the moving part may be configured to swing with a predetermined radius of rotation around the rotation axis. Accordingly, the polishing head (300) rotates on its own while simultaneously swinging by the moving part, and the ECMP process can be performed.
[0031] A slurry supply unit (not shown) can supply slurry (S) to a polishing pad (200). The slurry (S) can be supplied to the upper surface of the polishing pad (200). Electrochemical mechanical polishing of a wafer (W) can be performed using the slurry (S) supplied from the slurry supply unit.
[0032] For example, the slurry supply unit may be positioned on the upper part of the platen (100). The slurry supply unit may be positioned between the polishing head (300) and the conditioning module (400) to discharge the slurry (S) onto the upper surface of the polishing pad (200). In this case, the polishing head (300), the conditioning module (400), and the slurry supply unit may be sequentially positioned along the rotational direction (R) of the platen (100). Accordingly, the slurry (S) supplied from the slurry supply unit can be supplied more smoothly to the polishing head (300).
[0033] As another example, a slurry supply unit may be positioned at the bottom of the polishing pad (200). In this case, the polishing pad (200) may be provided with a discharge port (not shown) for discharging the slurry (S) supplied from the slurry supply unit to the upper surface of the polishing pad (200). The slurry (S) discharged through the discharge port is supplied to the surface of the wafer (W), thereby allowing the electrochemical mechanical polishing process (ECMP process) described above to be performed.
[0034] The conditioning module (400) can perform the function of conditioning the surface conditions of the polishing pad (200). The conditioning module (400) can polish the surface of the polishing pad (200) to maintain the surface roughness (surface roughness) of the polishing pad (200) in a constant state. To this end, the conditioning module (400) may be equipped with a disc (410) that contacts the polishing pad (200).
[0035] For example, the conditioning module (400) can polish the polishing pad (200) while the polishing of the wafer (W) is being performed by the polishing head (300). As another example, the conditioning module (400) can polish the polishing pad (200) while the polishing of the wafer (W) is stopped. In such ways, the conditioning module (400) can restore or maintain the surface roughness of the polishing pad (200).
[0036] FIG. 3a is a cross-sectional view showing an electrochemical mechanical polishing device according to one embodiment of the present invention as viewed from the direction I-I' of FIG. 1. FIG. 3b is a cross-sectional view showing an electrochemical mechanical polishing device according to another embodiment of the present invention as viewed from the direction I-I' of FIG. 1.
[0037] Referring to FIG. 3a, in the case of an electrochemical mechanical polishing device (10A) according to one embodiment of the present invention (hereinafter, Embodiment 1), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) made of a conductive material and a non-conductive portion (212) made of a non-conductive material. At this time, other features of the electrochemical mechanical polishing device (10A) are identical or similar to those described above, so a redundant description thereof is omitted.
[0038] For example, the conductive portion (211) may include nano (nm) sized glassy carbon particles. For convenience of explanation, the following description focuses on the case where the conductive material included in the polishing pad (300) is glassy carbon, but it should be noted that the present invention is not limited thereto. In the case of Example 1, glassy carbon particles may be evenly distributed throughout the conductive portion (211). More specifically, based on the view from the top of the polishing pad (200), the first pad portion (210) may be in a form where glassy carbon particles are uniformly distributed throughout.
[0039] For example, the non-conductive part (212) can be made of a non-conductive and highly wear-resistant material such as polyurethane.
[0040] The conductive portion (211) may be positioned at least partially below the groove (210a). The non-conductive portion (212) may be positioned above the conductive portion (211).
[0041] For example, based on the height direction (e.g., Z) of the polishing pad (200), the conductive portion (211) may be formed extending from the lower end of the groove (210a) along the downward direction (-Z) to the bottom surface of the first pad portion (210). As another example, although not shown in the drawing, the conductive portion (211) may be formed extending from directly below the groove (210a) along the downward direction (-Z) to the bottom surface of the first pad portion (210).
[0042] The non-conductive portion (212) may be formed extending from the top of the conductive portion (211) along the upward direction (+Z) to the upper surface of the first pad portion (210) [i.e., the upper surface of the polishing pad (200)]. That is, the groove (210a) may be formed in the non-conductive portion (212). In this case, with respect to the height direction (Z) mentioned above, the conductive portion (211) may be formed with a thicker thickness than the non-conductive portion (212), but is not limited thereto.
[0043] Accordingly, the polishing pad (200) may be made of a non-conductive material at the upper portion of the boundary line where the conductive portion (211) and the non-conductive portion (212) meet, and may be made of a conductive material at the lower portion of the boundary line. Additionally, the upper surface of the polishing pad (200) that contacts the wafer (W) may also be made of a non-conductive material.
[0044] Additionally, the second pad portion (220) may include a conductive material. For example, the second pad portion (220), like the first pad portion (210), may contain nano-sized glassy carbon particles evenly distributed throughout. More specifically, when viewed from the top of the polishing pad (200), the second pad portion (220) may have a form in which glassy carbon particles are evenly distributed throughout.
[0045] In the above case, the concentration of glass carbon included in the conductive part (211) may be the same as the concentration of glass carbon included in the second pad part (220). However, the present invention is not limited thereto, and the conductive part (211) may contain glass carbon at a higher concentration than the second pad part (220), or the second pad part (220) may contain glass carbon at a higher concentration than the conductive part (211).
[0046] In Example 1, the electrode (500) is positioned at the bottom of the polishing pad (200) and can be connected to the negative electrode of a power supply unit (not shown). For example, the electrode (500) can be positioned in a manner embedded in the upper part of the platen (100). At this time, the upper part of the electrode (500) can be fixedly coupled to the lower surface of the second pad unit (220) through an opening (not shown) provided on the upper surface of the platen (100). As the second pad unit (220) includes a conductive material, the electrode (500) can be electrically connected to the second pad unit (220).
[0047] Meanwhile, as another example, although not illustrated in the drawing, the electrode (500) may be placed between the platen (100) and the polishing pad (200). In this case, the upper part of the electrode (500) may be connected to the polishing pad (200), and the lower part of the electrode (500) may be connected to the upper part of the platen (100).
[0048] Additionally, an electrode (not shown) is also provided in the retainer ring (320) and can be connected to the positive electrode of the power supply unit. The slurry (S) supplied to the polishing pad (200) contains an electrolyte, and an electrochemical mechanical polishing (ECMP) process can be performed by applying current and voltage to the slurry (S) through the aforementioned electrodes. At this time, the properties of the slurry (S) change depending on the type of electrolyte, and the ECMP process can be controlled by adjusting the voltage and current supplied from the power supply unit so that the electrochemical reactivity of the slurry (S) and the surface of the wafer (W) changes.
[0049] The electrode (500) may be provided with a first rotating part (510) at its lower end. The first rotating part (510) may be positioned between the lower end of the electrode (500) and the platen (100) and configured to rotate independently when the platen (100) rotates. The first rotating part (510) may be, for example, a slip ring.
[0050] Referring to FIG. 3b, the electrode (500) may have a second rotating part (520) instead of a first rotating part (510). The second rotating part (520) may be positioned at the upper end of the electrode (500). The second rotating part (520) may be positioned between the upper end of the electrode (500) and the polishing pad (200) and configured to rotate independently when the platen (100) rotates. The second rotating part (520) may be composed of, for example, a roller.
[0051] As described above, by installing a first rotating part (510) or a second rotating part (520) on the electrode (500), when the platen (100) rotates, the wire (not shown) connected to the electrode (500) by the first rotating part (510) can be prevented from twisting or tangling.
[0052] Referring again to FIG. 3a, the retainer ring (320) may include a conductive material. For example, as shown in the upper right enlarged view of FIG. 3a, the retainer ring (hereinafter referred to as the first retainer ring) (320) may be made of a composite material comprising two different types of materials. Such composite materials may include a 'thermoplastic plastic material' having high thermal and chemical stability and wear resistance, and a 'conductive material' having excellent conductivity.
[0053] For example, the first retainer ring (320) can be manufactured by blending a conductive polymer with PPS (Polyphenylene Sulfide) or PEEK (Polyether Ether Ketone). In this way, it can be manufactured as a composite material containing a thermoplastic plastic material and a conductive material. Accordingly, because it contains a conductive material, an electric field can be generated in the retainer ring (320) when current and voltage are applied through the electrode (500) during the ECMP process. At this time, by controlling the electric field generated in the first retainer ring (320) through the adjustment of the applied current and voltage, the flow of the slurry (S) can be effectively controlled so that the slurry (S) flows into the first retainer ring (320) or is discharged from the first retainer ring (320). In addition, since the first retainer ring (320) includes a thermoplastic plastic material with excellent wear resistance, damage such as wear caused by friction can be minimized during the ECMP process.
[0054] As another example, as shown in the lower right enlarged view of FIG. 3a, the retainer ring (hereinafter referred to as the second retainer ring) (320a) may include two layers separated from each other. More specifically, the upper portion (321b) of the second retainer ring (320a) may be made of a conductive polymer material, and the lower portion (322b) may be made of PPS or PEEK. That is, the lower portion (322b) of the second retainer ring (320a) that contacts the polishing pad (200) may be made of a material with excellent wear resistance, and the upper portion (321b), which is the other part, may be made of a material with excellent conductivity. Accordingly, the second retainer ring (320a) can not only minimize damage such as wear caused by friction during the ECMP process, but also effectively control the flow of the slurry (S) through the generation and control of an electric field.
[0055] FIG. 4 is a cross-sectional view showing a retainer ring according to embodiments of the present invention as viewed from the direction II-II' of FIG. 3a.
[0056] Referring to FIG. 4(a), the first retainer ring (320) may include a flow path (321) for the slurry (S) to flow through. The flow path (321) may extend along the radial direction of the first retainer ring (320) and partially penetrate the side wall of the first retainer ring (320). Multiple flow paths (321) may be provided. Multiple flow paths (321) may be spaced apart from each other along the circumferential direction of the first retainer ring (320). At this time, the flow paths (321) may have the same or similar size. Meanwhile, although not shown in the drawing, a second retainer ring (320a) may also be provided in a form including multiple flow paths (321), similar to the first retainer ring (320).
[0057] Referring to FIG. 4(b), the retainer ring (hereinafter referred to as the third retainer ring) (320b) may include all the features of the first retainer ring (320) and the second retainer ring (320). Hereinafter, in the third retainer ring (320b), the part in which PPS or PEEK and a conductive polymer are mixed, as in the first retainer ring (320), is referred to as the 'first retainer ring part (320b1)'. And in the third retainer ring (320b), the part in which the lower part is made of PPS or PEEK, as in the second retainer ring (320), and the upper part is made of a conductive polymer, is referred to as the 'second retainer ring part (320b2)'.
[0058] Additionally, the third retainer ring (320b) may include a plurality of flow path sections (321). For example, the third retainer ring (320b) may have a form in which the first retainer ring section (320b1), the second retainer ring section (320b2), and the flow path section (321) are arranged sequentially and repeatedly along its circumferential direction.
[0059] In the above case, during the ECMP process, slurry (S) can be introduced into the retainer ring (320, 320a, 320b) through the flow path (321) and supplied to the surface of the wafer (W) contained and supported within the retainer ring (320, 320a, 320b). Additionally, the slurry (S) introduced into the retainer ring (320, 320a, 320b) can be discharged to the outside of the retainer ring (320, 320a, 320b) through the flow path (321). At this time, the flow of the slurry (S) when it is introduced or discharged through the flow path (321) can be controlled by generating and controlling a magnetic field in the retainer ring (320, 320a, 320b) as described above.
[0060] FIG. 5 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1.
[0061] Referring to FIG. 5, in the case of an electrochemical mechanical polishing device (10B) according to another embodiment of the present invention (hereinafter, Embodiment 2), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). Additionally, the second pad portion (220) may be made of a conductive material. At this time, since most of the features of the electrochemical mechanical polishing device (10B) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted, and the explanation will focus on the differences.
[0062] The conductive portion (211) may be positioned at the bottom of the groove (210a). More specifically, the conductive portion (211) may extend from directly below the groove (210a) along the downward direction (-Z) to the bottom surface of the first pad portion (210). In this way, by forming the conductive portion (211) in the area directly below the groove (210a), the conductive portion (211) may overlap with the groove (210a) when viewed from the top of the polishing pad (200).
[0063] The non-conductive portion (212) may be formed in the first pad portion (210) in an area where the groove (210a) is not placed. Accordingly, as shown in FIG. 5 (a), the conductive portion (211) and the non-conductive portion (212) may be alternately arranged along the width direction (X) of the polishing pad (200) when viewed along the side direction (e.g., ZX plane direction) of the polishing pad (200). In this case, since the conductive portion (211) has the same width as the groove (210a), it may be smaller in width than the non-conductive portion (212).
[0064] Additionally, as the non-conductive portion (212) is formed to overlap with the groove (210a) as described above, when the polishing pad (200) is viewed from above, only the groove (210a) and the non-conductive portion (212) can be placed on the upper surface of the polishing pad (200) as shown in Fig. 5 (b).
[0065] In the case of Example 2, the concentration of glass carbon included in the conductive part (211) is less than or equal to the concentration of glass carbon included in the second pad part (220), or the conductive part (211) may contain glass carbon at a higher concentration than that of the second pad part (220), as described above.
[0066] FIG. 6 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1.
[0067] Referring to FIG. 6, in the case of an electrochemical mechanical polishing device (10C) according to another embodiment of the present invention (hereinafter, Embodiment 3), the first pad portion (210) of the polishing pad (200) may include only a conductive portion (211). That is, the first pad portion (210) may not include a non-conductive portion (212). At this time, since most of the features of the electrochemical mechanical polishing device (10C) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted and the explanation will focus on the differences.
[0068] In the case of Example 3, the first pad portion (210) may be made entirely of a conductive material. Additionally, the first pad portion (210) may contain glassy carbon particles, which are conductive particles, uniformly throughout. Accordingly, as shown in FIG. 5 (a) and (b), the first pad portion (210) may be in a form in which nano-sized glassy carbon particles are uniformly contained throughout when viewed from the side direction (e.g., ZX plane direction) and when viewed from the top of the polishing pad (200).
[0069] Additionally, the second pad portion (220) may be made of a conductive material. At this time, the concentration of glass carbon included in the conductive portion (211) may be less than or equal to the concentration of glass carbon included in the second pad portion (220), or the conductive portion (211) may contain glass carbon at a higher concentration than that of the second pad portion (220), which is the same as in the previously described embodiments 1 and 2.
[0070] FIG. 7 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1.
[0071] Referring to FIG. 7, in the case of an electrochemical mechanical polishing device (20A) according to another embodiment of the present invention (hereinafter, Embodiment 4), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). Additionally, the second pad portion (220) may be made of a conductive material. At this time, since most of the features of the electrochemical mechanical polishing device (20A) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted, and the explanation will focus on the differences.
[0072] The conductive portion (211) according to Example 4 may be positioned at the bottom of the groove (210a). The conductive portion (211) may be formed extending from the bottom of the groove (210a) along the downward direction (-Z) to the bottom surface of the first pad portion (210). Additionally, the non-conductive portion (212) may be formed extending from the top of the conductive portion (211) along the upward direction (+Z) to the upper surface of the polishing pad (200). The groove (210a) may be formed in the non-conductive portion (212).
[0073] The conductive portion (211) may include regions where the concentration of conductive particles is partially different. More specifically, the conductive portion (211) may include a first conductive region (211a) and a second conductive region (211b). The first conductive region (211a) may include glassy carbon of a 'first concentration'. The second conductive region (211b) may include glassy carbon of a 'second concentration'. In this case, the first concentration may be different from the second concentration. For example, the first concentration may be greater than the second concentration, or the first concentration may be smaller than the second concentration. Thus, in the case of the first pad portion (210) of Example 4, the conductive portion (211) may have conductive particles unevenly distributed.
[0074] The first conductive region (211a) may be placed in the 'central part (B10) and edge part (B20)' of the first pad part (210), respectively. The second conductive region (211b) may be placed in the 'intermediate region (B30)' of the first pad part (210) located between the central part (B10) and the edge part (B20) mentioned above. Accordingly, as shown in FIG. 7 (a), the first conductive region (211a) and the second conductive region (211b) may be arranged alternately along the width direction (X) or radial direction of the polishing pad (200) based on a cross-sectional view viewed from the lateral direction (e.g., ZX plane direction) of the polishing pad (200). Additionally, as shown in FIG. 7(b), when viewed from the top of the polishing pad (200), the second conductive region (211b) may be arranged to be surrounded by the first conductive regions (211a) between the central portion (B10) and the edge portion (B20).
[0075] Additionally, the second pad portion (220) may be made of a conductive material. For example, the concentration of glassy carbon included in the second pad portion (220) may be greater than the first concentration and the second concentration mentioned above, or less than the first concentration and the second concentration. As another example, the concentration of glassy carbon included in the second pad portion (220) may be a concentration between the first concentration and the second concentration.
[0076] FIG. 8 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1.
[0077] Referring to FIG. 8, in the case of an electrochemical mechanical polishing device (20B) according to another embodiment of the present invention (hereinafter, Embodiment 5), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). Additionally, the second pad portion (220) may be made of a conductive material. At this time, since most of the features of the electrochemical mechanical polishing device (20B) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted, and the explanation will focus on the differences.
[0078] The conductive portion (211) according to Example 5 may be positioned at the bottom of the groove (210a). The conductive portion (211) may be formed extending from directly below the groove (210a) along the downward direction (-Z) to the bottom surface of the first pad portion (210). Accordingly, the conductive portion (211) may be positioned to overlap with the groove (210a) when viewed from the top of the polishing pad (200).
[0079] The conductive portion (211) may include a first conductive region (211a) containing glass carbon of a first concentration and a second conductive region (211b) containing glass carbon of a second concentration. The first conductive region (211a) may be placed in the central portion (B10) and the edge portion (B20) of the first pad portion (210), and the second conductive region (211b) may be placed in the intermediate region (B30) of the first pad portion (210). At this time, the number of first conductive regions (211a) included in the central portion (B10) and / or the edge portion (B20), and the number of second conductive regions (211b) included in the intermediate region (B30) may be increased or decreased as needed. Additionally, as previously stated, the first concentration may be the same as or different from the second concentration.
[0080] In the above case, the non-conductive portion (212) may be formed in the area of the first pad portion (210) where the groove (210a) is not placed. Accordingly, as shown in FIG. 8 (a), when viewed with respect to a cross-sectional view along the side direction (e.g., ZX plane direction) of the polishing pad (200), the first conductive area (211a), the second conductive area (211b), and the non-conductive portion (212) may be arranged alternately along the width direction (X) of the polishing pad (200). Additionally, as the non-conductive portion (212) is formed to overlap with the groove (210a) as described above, when the polishing pad (200) is viewed from above, only the groove (210a) and the non-conductive portion (212) may be placed on the upper surface of the polishing pad (200), as shown in FIG. 8 (b).
[0081] FIG. 9 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1.
[0082] Referring to FIG. 9, in the case of an electrochemical mechanical polishing device (20C) according to another embodiment of the present invention (hereinafter, Embodiment 6), only a conductive portion (211) may be provided in the first pad portion (210) of the polishing pad (200). At this time, since most of the features of the electrochemical mechanical polishing device (20C) are identical or similar to those of the aforementioned Embodiment 1, a redundant description will be omitted and the differences will be explained in detail.
[0083] In the case of Example 6, the first pad portion (210) does not include a non-conductive portion (212), so it may be made entirely of a conductive material. At this time, the first pad portion (210) may have a form in which glass carbon particles, which are conductive particles, are unevenly arranged. That is, the first pad portion (210) may include a first conductive region (211a) and a second conductive region (211b). The first conductive region (211a) is a region containing glass carbon of a first concentration, and the second conductive region (211b) is a region containing glass carbon of a second concentration, and the first concentration and the second concentration are different from each other as previously described.
[0084] In this case, the first conductive region (211a) may be positioned in the central portion (B10) and the edge portion (B20) of the first pad portion (210). And, the second conductive region (211b) may be positioned in the inter-regional area (B30) of the first pad portion (210). Accordingly, as shown in FIG. 9 (a), with respect to a cross-sectional view viewed from the lateral direction (e.g., ZX plane direction) of the polishing pad (200), the first conductive region (211a) and the second conductive region (211b) may be alternately positioned along the width direction (X) or radial direction as described above. Additionally, as shown in FIG. 9 (b), when viewed from the top of the polishing pad (200), the second conductive region (211b) may be positioned to be surrounded by the first conductive regions (211a) between the central portion (B10) and the edge portion (B20).
[0085] Additionally, the second pad portion (220) may be made of a conductive material. For example, the concentration of glassy carbon included in the second pad portion (220) may be greater than the first concentration and the second concentration mentioned above, or less than the first concentration and the second concentration. As another example, the concentration of glassy carbon included in the second pad portion (220) may be a concentration between the first concentration and the second concentration.
[0086] FIG. 10 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the I-I' direction of FIG. 1.
[0087] Referring to FIG. 10, in the case of an electrochemical mechanical polishing device (30A) according to another embodiment of the present invention (hereinafter, Embodiment 7), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). At this time, since most of the features of the electrochemical mechanical polishing device (30A) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted and the explanation will focus on the differences.
[0088] In the case of Example 7, the conductive portion (211) may be positioned at the bottom of the groove (210a). Additionally, the conductive portion (211) may be positioned at the central portion (B10) and the edge portion (B20) of the first pad portion (210). That is, the conductive portion (211) may extend from the central portion (B10) and the edge portion (B20) to the bottom surface of the first pad portion (210) along the downward direction (-Z) from directly below the groove (210a).
[0089] The non-conductive portion (212) may be placed in the inter-region (B30) of the first pad portion (210). Additionally, the non-conductive portion (212) may be placed above the conductive portion (211) in the central portion (B10) and the edge portion (B20). That is, the non-conductive portion (212) may be formed to extend along the upward direction (+Z) to the upper surface of the first pad portion (210) [the upper surface of the polishing pad (200)], directly above the conductive portion (211) in the central portion (B10) and the edge portion (B20). Accordingly, the groove (210a) of Example 7 may be placed in the non-conductive portion (212).
[0090] In the above case, as shown in FIG. 10 (a), based on a cross-sectional view from the side direction (ZX plane direction) of the polishing pad (200), the first conductive region (211a) and the second conductive region (211b) at the bottom of the groove (210a) may be arranged alternately along the width direction (X) or radial direction of the polishing pad (200). Additionally, as shown in FIG. 10 (b), based on a view from the top of the polishing pad (200), the non-conductive portion (212) may be arranged to be surrounded by the conductive portions (211) between the central portion (B10) and the edge portion (B20).
[0091] Additionally, the second pad portion (220) may be made of a conductive material. For example, the concentration of glass carbon contained in the second pad portion (220) may be equal to the concentration of glass carbon contained in the conductive portion (211), or may be smaller than the concentration of glass carbon contained in the conductive portion (211). As another example, the concentration of glass carbon contained in the second pad portion (220) may be larger than the concentration of glass carbon contained in the conductive portion (211).
[0092] FIG. 11 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the invention, as seen from the direction I-I' of FIG. 1.
[0093] Referring to FIG. 11, in the case of an electrochemical mechanical polishing device (30B) according to another embodiment of the present invention (hereinafter, Embodiment 8), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). At this time, since most of the features of the electrochemical mechanical polishing device (30B) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted and the explanation will focus on the differences.
[0094] In the case of Example 8, the conductive portion (211) may be placed at the bottom of the groove (210a). Additionally, the conductive portion (211) may be placed only in a part of the central portion (B10) and the edge portion (B20) of the first pad portion (210). That is, the conductive portion (211) may be placed only at the bottom of a part of the groove (210a) in the central portion (B10) and the edge portion (B20).
[0095] The non-conductive portion (212) may be placed in the inter-region (B30) of the first pad portion (210). Additionally, the non-conductive portion (212) may be placed on top of the conductive portion (211) at the central portion (B10) and the edge portion (B20). Accordingly, the conductive portion (211) may be surrounded by the non-conductive portion (212) and the groove (210a) based on a cross-sectional view of the polishing pad (200) viewed from the side direction (e.g., ZX plane direction), as shown in FIG. 11 (a). Additionally, as shown in FIG. 11 (b), when viewed from the top of the polishing pad (200), only the non-conductive portion (212) and the groove (210a) may be placed on the upper surface of the first pad portion (210).
[0096] Additionally, the second pad portion (220) may be made of a conductive material. For example, the concentration of glass carbon contained in the second pad portion (220) may be equal to the concentration of glass carbon contained in the conductive portion (211), or may be smaller than the concentration of glass carbon contained in the conductive portion (211). As another example, the concentration of glass carbon contained in the second pad portion (220) may be larger than the concentration of glass carbon contained in the conductive portion (211).
[0097] FIG. 12 is a cross-sectional view and a top view of a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, as seen from the direction I-I' of FIG. 1.
[0098] Referring to FIG. 12, in the case of an electrochemical mechanical polishing device (30C) according to another embodiment of the present invention (hereinafter, Embodiment 9), the first pad portion (210) of the polishing pad (200) may include a conductive portion (211) and a non-conductive portion (212). At this time, since most of the features of the electrochemical mechanical polishing device (30C) are identical or similar to those of the aforementioned Embodiment 1, redundant descriptions will be omitted and the explanation will focus on the differences.
[0099] In the case of Example 9, the conductive portion (211) may be positioned in the central portion (B10) and the edge portion (B20) of the first pad portion (210). And, the non-conductive portion (212) may be positioned in the inter-region (B30) of the first pad portion (210). Accordingly, as shown in FIG. 12 (a), the conductive portion (211) and the non-conductive portion (212) may be alternately positioned along the width direction (X) or the radial direction based on a cross-sectional view of the polishing pad (200) viewed from the side direction (e.g., ZX plane direction). Additionally, as shown in FIG. 12 (b), when viewed from the top of the polishing pad (200), the non-conductive portion (212) may be positioned in a manner surrounded by the conductive portions (211) between the central portion (B10) and the edge portion (B20). On the upper surface of the polishing pad (200) of Example 9, a conductive part (211), a non-conductive part (212), and a groove (210a) may all be arranged.
[0100] Additionally, the second pad portion (220) may be made of a conductive material. For example, the concentration of glass carbon contained in the second pad portion (220) may be equal to the concentration of glass carbon contained in the conductive portion (211), or may be smaller than the concentration of glass carbon contained in the conductive portion (211). As another example, the concentration of glass carbon contained in the second pad portion (220) may be larger than the concentration of glass carbon contained in the conductive portion (211).
[0101] FIG. 13 is a cross-sectional view showing a polishing pad of an electrochemical mechanical polishing device according to another embodiment of the present invention, viewed from the I-I' direction of FIG. 1.
[0102] Referring to FIG. 13, in the case of an electrochemical mechanical polishing device (40) according to another embodiment of the present invention (hereinafter, Embodiment 10), the second pad portion (220) may be made of a conductive material. At this time, since most of the features of the electrochemical mechanical polishing device (30C) are identical or similar to those of the aforementioned Embodiment 1, a redundant description will be omitted and the differences will be explained in detail.
[0103] In the case of Example 10, glassy carbon particles, which are conductive particles, may be unevenly distributed in the second pad portion (220). For example, the second pad portion (220) may include a 'third conductive region (220a)' containing glassy carbon of a third concentration and a 'fourth conductive region (220b)' containing glassy carbon of a fourth concentration. The third concentration may be greater than or less than the fourth concentration. In this case, the third conductive region (220a) may be placed in the central portion (B10) and edge portion (B20) of the second pad portion (220), and the fourth conductive region (220b) may be placed in the intermediate portion (B30) of the second pad portion (220).
[0104] The first pad portion (210) may have a first conductive region (211a) and a second conductive region (211b) alternately arranged along the width direction (X) or radial direction described above. For example, as shown in FIG. 13 (a), the first pad portion (210) may have the same shape as the polishing pad (200) of the aforementioned embodiment 4. As another example, as shown in FIG. 13 (b), the first pad portion (210) may have the same shape as the aforementioned embodiment 6. In this case, the first conductive region (211a) may be arranged to face the third conductive region (220a) in a line along the height direction (Z) at the central portion (B10) and the edge portion (B20). And, the second conductive region (211b) can be arranged in the inter-region (B30) along the height direction (Z) so as to face the fourth conductive region (220b) in alignment.
[0105] In the above case, the third concentration and the fourth concentration are different concentrations, and at the same time, the third concentration and the fourth concentration may be different from at least one of the first concentration and the second concentration. Accordingly, a plurality of conductive regions having various concentrations [i.e., the central portion (B10), the edge portion (B20), and the intermediate region (B30) of the first pad portion (210) and the second pad portion (220)] may be formed in the polishing pad (200).
[0106] Meanwhile, in the above-described embodiments, the distance between the central portion (B10) and the edge portion (B30) may be a length smaller than the diameter of the wafer (W). The distance may, for example, mean the straight distance between the central portion (B10) and the edge portion (B30) measured along the radial direction of the polishing pad (200).
[0107] Generally, during the ECMP process, the polishing head (300) is positioned between the central portion (B10) and the edge portion (B30) of the polishing pad (200), and ECMP can be performed on the wafer (W). At this time, the central portion (B10) and the edge portion (B30) are separated by a distance similar to or smaller than the diameter of the wafer (W), so that the edge portion of the wafer (W) comes into contact with the central portion (B10) and the edge portion (B30) of the polishing pad (200), and the ECMP process can be performed. Since the central portion (B10) and the edge portion (B30) are the areas where the first conductive region (211) is placed as described above, the flow of the slurry (S) at the edge portion of the wafer (W) can be controlled more effectively by applying current and voltage.
[0108] FIG. 14a is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to one embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 14b is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 14c is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to yet another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad.
[0109] Referring to FIGS. 14a to 14c, when the second pad portion (220) includes a conductive material as in Examples 1 to 10 described above, the electrode (500) can be connected to the second pad portion (220). At this time, the polishing pad (200) may be the same as the polishing pad (200) included in any one of Examples 1 to 10 described above. Hereinafter, for convenience of explanation, the description will focus on the polishing pad (200) of Example 1, but is not limited thereto.
[0110] The electrode (500) may be connected to at least one of the central portion (B10) and the edge portion (B20) on the lower surface of the second pad portion (220). To this end, at least one electrode (500) may be provided. In one embodiment, referring to FIG. 14a, the electrode (500) may be connected to the central portion (B10) of the second pad portion (220). In this case, one electrode (500) may be provided. One electrode (500) may be coupled to the center of the lower surface of the second pad portion (220) so as to be aligned with the center (C) of the polishing pad (200).
[0111] In another embodiment, referring to FIG. 14b, the electrode (500) may be connected to the edge portion (B20). For example, as shown in FIG. 14b (a) and (b), the electrode (500) may be provided as a single ring-shaped electrode and may be coupled to the edge portion of the lower surface of the second pad portion (220). In another example, as shown in FIG. 15b (a) and (c), a plurality of electrodes (500) may be provided. A plurality of electrodes (500) may be coupled to the edge portion of the lower surface of the second pad portion (220) while spaced apart along the circumferential direction of the second pad portion (220).
[0112] In another embodiment, referring to FIG. 14c, the electrode (500) may be connected to the central portion (B10) and the edge portion (B20), respectively. In this case, at least two electrodes (500) may be provided. For example, as shown in FIG. 14c (a) and (b), the electrode (500) may be provided as a ring-shaped single electrode (first electrode) and a pillar-shaped electrode (second electrode). The first electrode (500) may be connected to the edge portion of the lower surface of the second pad portion (220), and the second electrode (500) may be connected to the center of the lower surface of the second pad portion (220).
[0113] As another example, as shown in (a) and (c) of FIG. 14c, a plurality of pillar-shaped electrodes (500) may be provided. One of the plurality of electrodes (500) may be coupled to the center of the lower surface of the second pad portion (220). The remaining electrodes (500) may be coupled to the edge portion of the lower surface of the second pad portion (220) while spaced apart along the circumferential direction of the second pad portion (220).
[0114] FIG. 15a is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 15b is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 15c is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad.
[0115] Referring to FIGS. 15a to 15c, in the case of an electrochemical mechanical polishing device (50A) according to another embodiment of the present invention (hereinafter, Embodiment 11), it may include a first pad portion (210) containing a conductive material and a second pad portion (220). At this time, since most of the features of the electrochemical mechanical polishing device (50A) are identical or similar to those of the aforementioned Embodiment 1, a redundant description will be omitted and the explanation will focus on the differences.
[0116] In the case of Example 11, the second pad portion (220) may be made of a non-conductive material. The second pad portion (220) may be manufactured from, for example, polyurethane, but is not limited thereto. At this time, the second pad portion (220) may be provided with a penetration portion (221). The penetration portion (221) may have a shape that extends from the bottom surface of the second pad portion (220) to the top surface of the second pad portion (220) along the vertical direction (Z) and penetrates the second pad portion (220).
[0117] Unlike the previously described embodiments 1 to 10, the electrode (500) may be connected to the first pad portion (210). The electrode (500) of embodiment 11 may be positioned at the bottom of the polishing pad (200) and extend upward (+Z) from the platen (100). In this case, the lower end of the electrode (500) is connected to the platen (100), and the upper end is partially inserted through the through-hole (221) and extends to be connected to the bottom surface of the first pad portion (210). In this manner, the electrode (500) may be directly connected to the first pad portion (210).
[0118] The electrode (500) may be connected to at least one of the central portion (B10) and the edge portion (B20) among the lower portions of the first pad portion (210). To this end, at least one electrode (500) may be provided. Accordingly, the second pad portion (220) may be provided with at least one through-hole (221). At this time, the through-hole (221) may be positioned at corresponding locations so that the electrode (500) is inserted through it one-to-one.
[0119] In one embodiment, referring to FIG. 15a, the electrode (500) may be connected to the central portion (B10) of the first pad portion (210). In this case, one electrode (500) and one through-hole (221) may be provided. The electrode (500) may be positioned in alignment with the center (C) of the polishing pad (200) by passing through the through-hole (221) and being coupled to the center of the lower surface of the second pad portion (220).
[0120] In another embodiment, referring to FIG. 15b, the electrode (500) may be connected to the edge portion (B20). For example, as in FIG. 15b (a) and (b), if the electrode (500) has the form of a ring-shaped single electrode, the through portion (221) may also be provided in the form of a ring-shaped through hole to correspond thereto. The electrode (500) may pass through the through portion (221) and be coupled to the edge portion of the lower surface of the first pad portion (210).
[0121] As another example, as shown in (a) and (c) of FIG. 15b, a plurality of electrodes (500) and through-holes (221) may be provided. The electrodes (500) and through-holes (221) may be spaced apart along the circumferential direction of the second pad portion (220). The electrodes (500) may be inserted through the through-holes (221) one-to-one and each may be coupled to the edge portion of the lower surface of the first pad portion (210).
[0122] In another embodiment, referring to FIG. 15c, the electrode (500) may be connected to the central portion (B10) and the edge portion (B20), respectively. In this case, the electrode (500) and the penetration portion (221) may each be provided with two or more. For example, as shown in FIG. 15c (a) and (b), the electrode (500) may be provided with a ring-shaped single electrode (first electrode) and a penetration portion (first penetration portion), and a pillar-shaped electrode (second electrode) and a penetration portion (second penetration portion). The first electrode (500) may pass through the first penetration portion (221) and be coupled to the edge portion of the lower surface of the second pad portion (220). And, the second electrode (500) may pass through the second penetration portion (221) and be coupled to the center of the lower surface of the second pad portion (220).
[0123] As another example, as shown in (a) and (c) of FIG. 15c, a plurality of column-shaped electrodes (500) and through-holes (221) may be provided. Any one of the plurality of electrodes (500) may pass through the through-hole (221) and be coupled to the center of the lower surface of the second pad portion (220). The remaining electrodes (500) and through-holes (221) may be spaced apart along the circumferential direction of the second pad portion (220). The electrodes (500) may be inserted through the through-holes (221) one-to-one and each coupled to the edge portion of the lower surface of the first pad portion (210).
[0124] FIG. 16a is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 16b is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad. FIG. 16c is a cross-sectional view of an electrochemical mechanical polishing device including an electrode according to another embodiment of the present invention, viewed from the direction I-I' of FIG. 1, and a top view of the polishing pad.
[0125] Referring to FIGS. 16a to 16c, in the case of an electrochemical mechanical polishing device (50B) according to another embodiment of the present invention (hereinafter, Embodiment 12), it may include a first pad portion (210) and a second pad portion (220). At this time, since most of the features of the electrochemical mechanical polishing device (50B) are identical or similar to those of the aforementioned Embodiment 1, a redundant description will be omitted and the explanation will focus on the differences.
[0126] In the case of Example 11, the second pad portion (220) may be made of a non-conductive material. The second pad portion (220) may be manufactured, for example, of polyurethane. In this case, the first pad portion (210) may be made of a conductive material. In this case, the first pad portion (210) may be made entirely of a conductive material, including the upper surface of the polishing pad (200), as in the aforementioned Example 3 or Example 6.
[0127] The electrode (500) can be connected to the first pad portion (210). The electrode (500) of Example 11 can be placed on the upper part of the polishing pad (200). The lower end of the electrode (500) can be directly coupled to the upper surface of the first pad portion (210).
[0128] The electrode (500) may be connected to at least one of the central portion (B10) and the edge portion (B20) on the upper surface of the first pad portion (210). To this end, at least one electrode (500) may be provided. In one embodiment, referring to FIG. 16a, the electrode (500) may be connected to the central portion (B10) of the first pad portion (210). One electrode (500) may be provided and coupled to the center of the upper surface of the first pad portion (210). Accordingly, the electrode (500) may be placed in alignment with the center (C) of the polishing pad (200). In this case, to prevent a collision between the polishing head (300) and the electrode (500), the polishing head (300) rotates and swings between the electrode (500) and the edge portion (B20), and the ECMP process may be performed.
[0129] In another embodiment, referring to FIG. 16b, the electrode (500) may be connected to the edge portion (B20). For example, as shown in FIG. 16b (a) and (b), the electrode (500) may be provided as a single ring-shaped electrode and may be coupled to the edge portion of the upper surface of the first pad portion (210). In another example, as shown in FIG. 16b (a) and (c), a plurality of electrodes (500) may be provided. A plurality of electrodes (500) may be coupled to the edge portion of the lower surface of the second pad portion (220) while spaced apart along the circumferential direction of the second pad portion (220). In such a case, the ECMP process may be performed by rotating and swinging the polishing head (300) inside the ring-shaped electrode (500) or between the electrodes (500) so that no collision occurs between the polishing head (300) and the electrode (500).
[0130] In another embodiment, referring to FIG. 16c, the electrode (500) may be connected to the central portion (B10) and the edge portion (B20), respectively. To this end, at least two electrodes (500) may be provided. For example, as shown in FIG. 16c (a) and (b), the electrode (500) may be provided as a ring-shaped single electrode (first electrode) and a pillar-shaped electrode (second electrode). The first electrode (500) may be connected to the edge portion of the upper surface of the first pad portion (210), and the second electrode (500) may be connected to the center of the upper surface of the first pad portion (210).
[0131] As another example, as shown in (a) and (c) of FIG. 16c, a plurality of pillar-shaped electrodes (500) may be provided. One of the plurality of electrodes (500) may be coupled to the center of the upper surface of the first pad portion (210). The remaining electrodes (500) may be coupled to the edge portion of the upper surface of the first pad portion (210) while spaced apart along the circumferential direction of the first pad portion (210).
[0132] In the above case, the ECMP process can be performed by the polishing head (300) rotating and swinging between the electrodes (500) so that no collision occurs between the polishing head (300) and the electrode (500).
[0133] As described above, the electrode (500) is provided to be positioned at various locations on the upper or lower part of the polishing pad (200), thereby allowing the design to be easily changed according to the specifications or structure of the polishing pad (200) and the electrochemical mechanical polishing device (10), thereby improving space utilization.
[0134] The electrochemical mechanical polishing device (10, 10A, 10B, 10C, 20A, 20B, 20C, 30A, 30B, 30C, 40, 50A, 50B) according to the embodiments of the present invention as described above is configured such that the retainer ring (320) includes a conductive material, so that when current and voltage are applied through the electrode (500), an electric field can be generated in the retainer ring (320). Furthermore, by controlling the electric field generated in the retainer ring (320) through the adjustment of the applied current and voltage, the flow of the slurry (S) supplied to the upper surface of the polishing pad (200) can be more effectively controlled during the process of the slurry (S) flowing into or being discharged from the retainer ring (320).
[0135] In addition, the first pad portion (210) of the polishing pad (200) is configured to include a conductive material, so that when current and voltage are applied through the electrode (500), an electric field can be generated in the polishing pad (200). Furthermore, by controlling the electric field generated in the retainer ring (320) through the control of the applied current and voltage, the slurry (S) is supplied sufficiently and evenly to the edge portion of the wafer (W), thereby reducing the rebound phenomenon at the edge portion of the wafer (W) during the ECMP process and effectively controlling the edge removal rate of the wafer (W).
[0136] The present invention is not limited by the embodiments described above and the attached drawings, but is intended to be limited by the appended claims. Accordingly, various substitutions, modifications, and changes may be made by those skilled in the art within the scope of the technical concept of the present invention as described in the claims, and such are also to be considered to fall within the scope of the present invention. Explanation of the symbols
[0137] 10: Electrochemical mechanical polishing device 10A, 10B, 10C: Electrochemical mechanical polishing device 20A, 20B, 20C: Electrochemical mechanical polishing device 30A, 30B, 30C: Electrochemical mechanical polishing device 40, 50A, 50B: Electrochemical mechanical polishing device 100: Platton 200: Grinding pad 210: 1st pad section 220: 2nd pad section 300: Grinding head 310: Head section 320: Retainer ring 400: Conditioning Module 500: Electrode W: Wafer
Claims
Claim 1 An electrochemical mechanical polishing apparatus comprising: a platen; a polishing pad disposed on the upper part of the platen and comprising a first pad portion including a groove formed concavely inwardly from the upper surface, a conductive portion of a conductive material and a non-conductive portion of a non-conductive material, and a second pad portion disposed on the lower part of the first pad portion and comprising a conductive material; a polishing head disposed on the upper part of the polishing pad and pressurizing the wafer, comprising a retainer ring that supports the wafer and comprises a conductive material; and an electrode disposed on the lower part of the polishing pad and connected to the second pad portion. Claim 2 An electrochemical mechanical polishing device according to claim 1, wherein the conductive part is at least partially disposed in the lower part of the groove and the non-conductive part is disposed in the upper part of the conductive part. Claim 3 An electrochemical mechanical polishing device according to claim 2, wherein the conductive portion and the non-conductive portion are alternately arranged along the radial direction of the polishing pad. Claim 4 An electrochemical mechanical polishing device according to claim 2, wherein the conductive part comprises a first conductive region containing glassy carbon of a first concentration and a second conductive region containing glassy carbon of a second concentration. Claim 5 An electrochemical mechanical polishing device according to claim 2, wherein the conductive portion is disposed in the central portion and the edge portion of the first pad portion, respectively, and the non-conductive portion is disposed in the intermediate region between the central portion and the edge portion of the first pad portion. Claim 6 In claim 1, the electrochemical mechanical polishing device, wherein the retainer ring is made of a composite material comprising a non-conductive material and a conductive material. Claim 7 An electrochemical mechanical polishing apparatus comprising: a platen; a polishing pad disposed on the upper part of the platen and comprising a first pad portion made of a conductive material having a groove concave inwardly on the upper surface and disposed below the first pad portion and comprising a second pad portion made of a conductive material; a polishing head disposed on the upper part of the polishing pad and pressurizing the wafer, comprising a retainer ring that supports the wafer and includes a conductive material; and an electrode disposed between the platen and the polishing pad and electrically connected to the second pad portion. Claim 8 An electrochemical mechanical polishing device according to claim 7, wherein the first pad portion and the second pad portion comprise glass carbon, and the concentration of glass carbon included in the first pad portion and the concentration of glass carbon included in the second pad portion are different from each other. Claim 9 In claim 7, the first pad portion comprises a first conductive region containing glassy carbon of a first concentration and a second conductive region containing glassy carbon of a second concentration smaller than the first concentration, and the first conductive region and the second conductive region are alternately arranged along the radial direction of the polishing pad, an electrochemical mechanical polishing device. Claim 10 In claim 7, the electrochemical mechanical polishing device, wherein the retainer ring is made of a composite material comprising a non-conductive material and a conductive material.