Gas supplier, processing apparatus, and method of manufacturing semiconductor device

Abstract

The present invention provides a technology that can evenly flow a processing gas on a substrate. The technology of the present disclosure is a gas supply unit having a first opening and a second opening that each supply gas to a processing chamber in which a substrate is placed, wherein the first opening and the second opening are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first opening is supplied in the direction of the center of the substrate, the gas supplied from the second opening is supplied in the direction of the periphery of the substrate, and the direction of the gas supplied from the second opening is configured to form a predetermined angle with respect to the direction of the gas supplied from the first opening.

Description

Technology Field

[0001] The present disclosure relates to a gas supply unit, a processing unit, and a method for manufacturing a semiconductor device. Background Technology

[0002] In some cases, a process for forming a film on a substrate is performed as a process step in the manufacturing process of a semiconductor device (see, for example, Patent Documents 1 to 3). According to these documents, a nozzle for supplying a processing gas and a nozzle for supplying an inert gas are provided, and an inert gas that does not contribute to the processing of the substrate is supplied so that the processing gas flows evenly over the substrate. However, there are still cases where it is difficult to flow the processing gas evenly. Prior art literature

[0003] Japanese Patent Publication No. 2019-062053, Japanese Patent Publication No. 2019-203182, International Publication No. 2021 / 020008 The problem to be solved

[0004] The present disclosure provides a technique that enables a processing gas to flow evenly over a substrate. means of solving the problem

[0005] According to the first aspect of the present disclosure,

[0006] A technology having a first opening and a second opening that respectively supply gas to a processing room in which a substrate is placed, and

[0007] The first opening and the second opening are arranged in a direction parallel to the surface of the substrate, and

[0008] The gas supplied from the first opening is supplied toward the center of the substrate, and

[0009] The gas supplied from the second opening is supplied in the direction of the periphery of the substrate, and

[0010] A technology is provided in which the direction of the gas supplied from the second opening is configured to form a predetermined angle with respect to the direction of the gas supplied from the first opening. Effects of the invention

[0011] According to the present disclosure, the processing gas can flow evenly over the substrate. Brief explanation of the drawing

[0012] FIG. 1 is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 2 is a cross-sectional view illustrating a gas supply section and a reaction tube, etc. of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 3 is a block diagram illustrating a control unit provided in a substrate processing device according to an embodiment of the present disclosure. FIG. 4 is a drawing illustrating the film formation sequence of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 5 is a front view and a cross-sectional view illustrating a gas nozzle provided in a gas supply unit according to an embodiment of the present disclosure. FIG. 6 is a table showing the simulation results of a gas supply unit according to an embodiment of the present disclosure and the simulation results of a conventional gas supply unit. FIG. 7 is an explanatory diagram used to explain the gas partial pressure (ΔPa), which is an evaluation index of the gas supply unit according to an embodiment of the present disclosure. FIG. 8 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a table showing the gas flow, etc. when the hole diameter of the second opening is changed. FIG. 9 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a table showing the flow rate ratio, etc. when the hole diameter of the second opening is changed. FIG. 10 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a table showing the gas flow, etc. when the inclination angle of the second opening is changed. FIG. 11 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a table showing the flow rate ratio, etc. when the flow rate of the gas flowing through the gas nozzle is changed. FIG. 12 is a front view and a cross-sectional view illustrating a first modified example of a gas supply unit according to an embodiment of the present disclosure. FIG. 13 is a front view and a cross-sectional view illustrating a second modified example of a gas supply unit according to an embodiment of the present disclosure. FIG. 14 is a front view and a cross-sectional view illustrating a third modified example of a gas supply unit according to an embodiment of the present disclosure. FIG. 15 is another modified example illustrating a gas supply unit and a reaction tube, etc. of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 16a is a drawing illustrating an example of a gas supply unit according to an embodiment of the present disclosure. FIG. 16b is a drawing illustrating an example of a gas supply unit relating to an embodiment of the present disclosure. FIG. 17 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a graph showing the gas partial pressure (ΔPa) when the hole diameter of the second opening is changed. FIG. 18 is a simulation result of a gas supply unit according to an embodiment of the present disclosure, and is a table showing the gas flow, etc. when the hole diameter of the second opening is changed. Specific details for implementing the invention

[0013] <Embodiments of the Present Disclosure>

[0014] Hereinafter, embodiments of the present disclosure will be described using FIGS. 1 to 18. Furthermore, all drawings used in the following description are schematic. Also, the dimensional relationships of each element and the ratios of each element shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships of each element and the ratios of each element do not necessarily correspond to one another among multiple drawings. Also, in the drawings, arrow H indicates the vertical direction of the device, arrow W indicates the horizontal direction of the device, and arrow D indicates the horizontal direction of the device.

[0015] (Overall configuration of the substrate processing device (10))

[0016] As shown in FIG. 1, the substrate processing device (10) is equipped with a control unit (280) that controls each part and a processing furnace (202). The processing furnace (202) has a heater (207) which is a heating means. The heater (207) is cylindrical in shape extending in the vertical direction, has an open bottom end, and is supported on a heater base not shown. The heater (207) also functions as an activation mechanism that activates the processing gas with heat. In addition, details regarding the control unit (280) will be described later.

[0017] Inside the heater (207), a reaction tube (203) is arranged concentrically with the heater (207) to form a reaction vessel. The reaction tube (203) is formed from a heat-resistant material, such as quartz (SiO2) or silicon carbide (SiC). The substrate processing device (10) is a so-called hot wall type.

[0018] The reaction tube (203) has a cylindrical inner tube (12) and a cylindrical outer tube (14) arranged to surround the inner tube (12). The inner tube (12) is arranged concentrically with the outer tube (14), and a gap (S) is formed between the inner tube (12) and the outer tube (14).

[0019] The inner tube (12) is a cylindrical shape with an open bottom, a flat top, and a closed top. The outer tube (14) is also a cylindrical shape with an open bottom, a flat top, and a closed top. In addition, a nozzle chamber (222) is formed in the gap (S) between the inner tube (12) and the outer tube (14), as shown in FIG. 2. In addition, details regarding the nozzle chamber (222) will be described later.

[0020] Inside this inner tube (12), as shown in FIG. 1, a processing room (201) for processing a wafer (200) as a substrate is formed. In addition, this processing room (201) is capable of accommodating a boat (217), which is an example of a substrate holding support capable of holding and supporting the wafer (200) in a horizontal position while it is aligned in multiple stages in the vertical direction. And, the inner tube (12) surrounds the accommodated wafer (200).

[0021] Additionally, on the surrounding wall of the inner tube (12), a supply slit (235a) and a first exhaust port (236), which is an example of a discharge port, are formed so as to face the supply slit (235a). The supply slit (235a) extends in a horizontal direction and is formed in multiple numbers arranged in a vertical direction. Furthermore, on the surrounding wall of the inner tube (12), a second exhaust port (237) is formed below the first exhaust port (236), having a smaller opening area than the first exhaust port (236).

[0022] The lower end of the reaction tube (203) is supported by a cylindrical manifold (226). The manifold (226) is composed of a metal, such as a nickel alloy or stainless steel, or a heat-resistant material, such as quartz or SiC. A flange is formed at the upper end of the manifold (226), and the lower end of the outer tube (14) is installed on this flange. Additionally, a sealing member (220), such as an O-ring, is placed between this flange and the lower end of the outer tube (14), so that the interior of the reaction tube (203) is sealed.

[0023] A seal cap (219) is hermetically installed at the lower opening of the manifold (226) via a sealing member (220), such as an O-ring. The lower opening of the reaction tube (203) is hermetically sealed. The seal cap (219) is made of a metal, such as a nickel alloy or stainless steel, and is formed in a disc shape. Additionally, a heat-resistant material, such as quartz or SiC, may be used to cover the outer surface of the seal cap (219).

[0024] A boat support (218) that supports the boat (217) is provided on the seal cap (219). The boat support (218) is made of a heat-resistant material, such as quartz or SiC, and functions as an insulating part.

[0025] The boat (217) is installed on a boat support (218). The boat (217) is made of a heat-resistant material, such as quartz or SiC. The boat (217) has a bottom plate not shown fixed to the boat support (218) and a ceiling plate positioned above it, and a plurality of supports (217a) (see FIG. 2) are installed between the bottom plate and the ceiling plate.

[0026] In the boat (217), a plurality of wafers (200) are held and supported in the processing chamber (201) inside the inner tube (12). The plurality of wafers (200) are supported on the support (217a) of the boat (217) while maintaining a horizontal position with a certain spacing between them and centered on each other. In other words, the wafers (200) are arranged with a vertical spacing in the vertical direction with the plate thickness direction as the vertical direction. Also, the loading direction of the wafers (200) is aligned with the axial direction of the reaction tube (203). That is, the center of the wafer (200) is aligned with the central axis of the boat (217), and the central axis of the boat (217) coincides with the central axis of the reaction tube (203).

[0027] A rotating mechanism (267) for rotating the boat is provided on the lower side of the seal cap (219). The rotation axis (265) of the rotating mechanism (267) passes through the seal cap (219) and is connected to the boat support (218), and the wafer (200) is rotated by rotating the boat (217) through the boat support (218) by the rotating mechanism (267).

[0028] The seal cap (219) is raised vertically by an elevator (115) which is a lifting mechanism provided on the outside of the reaction tube (203). By doing so, the boat (217) is brought into and taken out of the processing room (201).

[0029] In the manifold (226), a nozzle support (350a) is installed to pass through the manifold (226) to support a gas nozzle (340a) which serves as a supply pipe (supply pipe section) for supplying gas to the interior of the processing room (201). The nozzle support (350a) is formed from a material such as, for example, nickel alloy or stainless steel.

[0030] A gas supply pipe (310a) for supplying gas to the interior of the processing chamber (201) is connected to one end of the nozzle support (350a). Additionally, a gas nozzle (340a) is connected to the other end of the nozzle support (350a). The gas nozzle (340a) is formed from a heat-resistant material, such as quartz or SiC. Furthermore, details regarding the gas nozzle (340a) and the gas supply pipe (310a) will be described later.

[0031] Meanwhile, an exhaust port (230) is formed in the outer tube (14) of the reaction tube (203). The exhaust port (230) is formed below the second exhaust port (237). Additionally, an exhaust pipe (231) is connected to this exhaust port (230).

[0032] A vacuum pump (246) serving as a vacuum exhaust device is connected to an exhaust pipe (231) through a pressure sensor (245) that detects the internal pressure of the processing room (201) and an APC (Auto Pressure Controller) valve (244) serving as a pressure regulator. The exhaust pipe (231) downstream of the vacuum pump (246) is connected to a waste gas treatment device, etc., not shown. By controlling the output of the vacuum pump (246) and the degree of opening of the APC valve (244), the vacuum exhaust is configured to be performed so that the internal pressure of the processing room (201) becomes a predetermined pressure (vacuum degree).

[0033] Additionally, an unillustrated temperature sensor is installed inside the reaction tube (203) as a temperature detector, and the internal temperature of the processing room (201) is configured to have a desired temperature distribution by adjusting the power supplied to the heater (207) based on the temperature information detected by the temperature sensor.

[0034] In this configuration, in the processing furnace (202), a boat (217) for stacking multiple wafers (200) to be batch processed in multiple stages is brought into the processing room (201) by a boat support (218). Then, a heater (207) heats the wafers (200) brought into the processing room (201) to a predetermined temperature. A device having such a processing furnace is called a vertical batch device.

[0035] [Nozzle chamber (222)]

[0036] The nozzle chamber (222) is extended in a vertical direction and is formed in the gap (S) between the outer surface (12c) of the inner tube (12) and the inner surface (14a) of the outer tube (14), as shown in FIG. 2. Specifically, the nozzle chamber (222) is formed between the first partition (18a) which extends outward from the outer surface (12c) of the inner tube (12) toward the outer tube (14) and the second partition (18b) which extends outward from the outer surface (12c) of the inner tube (12) toward the outer tube (14), and also between the inner tube (12) and the arc-shaped ceiling plate (20) connecting the tip of the first partition (18a) and the tip of the second partition (18b).

[0037] [Gas nozzle (340a)]

[0038] The gas nozzle (340a) extends in a vertical direction and is positioned in the nozzle chamber (222) as shown in FIG. 2. The gas nozzle (340a) is used as a processing gas nozzle to supply raw gas or reaction gas, which is the processing gas, into the interior of the processing chamber (201). The gas nozzle (340a) is configured as an I-shaped (I-shaped) long nozzle. Additionally, on the circumferential surface of the gas nozzle (340a), an opening (234) is formed as a gas outlet that sprays gas in a direction parallel to the supply slit (235a) (i.e., horizontal direction), respectively. The opening (234) is configured to include a first opening (234a) and a second opening (234b). A gas supply unit (342a) is configured including this gas nozzle (340a). In addition, details regarding the first opening (234a) and the second opening (234b) will be described later.

[0039] [Gas supply pipes (310a, 310b)]

[0040] As shown in FIG. 1, the gas supply pipe (310a) is in communication with the gas nozzle (340a) through the nozzle support (350a).

[0041] In the gas supply pipe (310a), a raw gas supply source (360a) that supplies raw gas as a processing gas, a mass flow controller (MFC) (320a) which is an example of a flow controller, and a valve (330a) are each provided in order from the upstream direction in the direction of gas flow.

[0042] In addition, the gas supply system is configured by a raw gas supply source (360a), an MFC (320a), and a valve (330a).

[0043] Additionally, a gas supply pipe (310b) for supplying inert gas as a treatment gas is connected to the downstream side of the valve (330a) of the gas supply pipe (310a) in the direction of gas flow. In the gas supply pipe (310b), an inert gas supply source (360b), an MFC (320b), and a valve (330b) are respectively provided in order from the upstream direction in the direction of gas flow to supply inert gas as a treatment gas. An inert gas supply system is formed by the inert gas supply source (360b), the MFC (320b), and the valve (330b).

[0044] [Control unit (280)]

[0045] FIG. 3 is a block diagram illustrating the control configuration of a substrate processing device (10), and the control unit (280) (so-called controller) of the substrate processing device (10) is configured as a computer. This computer is equipped with a CPU (Central Processing Unit) (121a), RAM (Random Access Memory) (121b), a memory device (121c), and an I / O port (121d).

[0046] The RAM (121b), memory device (121c), and I / O port (121d) are configured to exchange data with the CPU (121a) via an internal bus (121e). An input / output device (122), configured as, for example, a touch panel, is connected to the control unit (280).

[0047] The memory device (121c) is composed of, for example, flash memory, HDD (Hard Disk Drive), etc. Inside the memory device (121c), a control program that controls the operation of the substrate processing device (10), and a process recipe containing the steps or conditions of the substrate processing described later are stored in a readable manner.

[0048] A process recipe is a combination of steps in the substrate processing process described later, which is executed by the control unit (280) to obtain a predetermined result, and functions as a program. Hereinafter, process recipes and control programs are collectively referred to simply as programs.

[0049] In this specification, the term "program" may be used to include only a process recipe group, only a control program group, or both. Additionally, RAM (121b) is configured as a memory area (work area) in which programs or data read by the CPU (121a) are temporarily stored.

[0050] The I / O port (121d) is connected to the above-described MFC (320a, 320b), valve (330a, 330b), pressure sensor (245), APC valve (244), vacuum pump (246), heater (207), temperature sensor, rotating mechanism (267), and elevator (115), etc.

[0051] The CPU (121a) is configured to read and execute a control program from the memory device (121c), and also to read a process recipe from the memory device (121c) in accordance with the input of an operation command from the input / output device (122).

[0052] The CPU (121a) is configured to control the flow rate adjustment operation of various gases by the MFC (320a, 320b), the opening and closing operation of the valve (330a, 330b), and the opening and closing operation of the APC valve (244) in accordance with the contents of the read process recipe. Additionally, the CPU (121a) is configured to control the pressure adjustment operation by the APC valve (244) based on the pressure sensor (245), the starting and stopping of the vacuum pump (246), and the temperature adjustment operation of the heater (207) based on the temperature sensor. Additionally, the CPU (121a) is configured to control the rotation and rotation speed adjustment operation of the boat (217) by the rotating mechanism (267), and the lifting operation of the boat (217) by the elevator (115).

[0053] The control unit (280) is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer. For example, the control unit (280) of this embodiment can be configured by preparing an external storage device (123) that stores the above-described program and installing the program on a general-purpose computer using this external storage device (123). Examples of external storage devices include, for instance, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory.

[0054] [Overview of Substrate Processing Device Operation]

[0055] Next, an overview of the operation of the substrate processing device (10) is explained using the film deposition sequence shown in FIG. 4 according to the control procedure performed by the control unit (280). FIG. 4 shows a graph of the amount of gas supplied (vertical axis) and the timing of the gas supply (horizontal axis) in the film deposition sequence according to the present embodiment. In addition, a boat (217) loaded with a predetermined number of wafers (200) is introduced into the reaction tube (203), and the reaction tube (203) is hermetically sealed by a seal cap (219).

[0056] When control by the control unit (280) is initiated, the control unit (280) operates the vacuum pump (246) and APC valve (244) shown in FIG. 1 to exhaust the atmosphere inside the reaction tube (203) from the exhaust port (230). In addition, the control unit (280) controls the rotation mechanism (267) to initiate the rotation of the boat (217) and the wafer (200). In addition, this rotation is continued at least until the processing of the wafer (200) is completed.

[0057] In the film deposition sequence illustrated in FIG. 4, the processing process discharge process is defined as one cycle, and this one cycle is executed a predetermined number of times to complete the film deposition on the wafer (200). Then, when the film deposition is completed, the boat (217) is removed from the inside of the reaction tube (203) by the reverse order of the above-described operation. Additionally, the wafer (200) is transferred from the boat (217) to a pod on a transfer shelf by a wafer transfer loader not illustrated, and the pod is transferred from the transfer shelf to a pod stage by a pod carrier. Additionally, the wafer (200) is removed from the housing by an external transfer device.

[0058] Below, one cycle of the tabernacle sequence is described. Also, in the state before the tabernacle sequence is executed, the valves (330a, 330b) are closed.

[0059] [Processing Process]

[0060] When the atmosphere inside the reaction tube (203) is exhausted from the exhaust port (230) by the control of each part by the control unit (280), the control unit (280) opens the valve (330a) and sprays raw material gas from the opening (234) of the gas nozzle (340a).

[0061] At this time, the control unit (280) operates the vacuum pump (246) and the APC valve (244) to ensure that the pressure obtained from the pressure sensor (245) becomes constant, thereby discharging the atmosphere inside the reaction tube (203) from the exhaust port (230) and making the inside of the reaction tube (203) negative pressure. As a result, the raw material gas flows parallel to the wafer (200), then flows from the upper to the lower part of the gap (S) through the first exhaust port (236) and the second exhaust port (237), and is exhausted from the exhaust pipe (231) through the exhaust port (230). Here, the control unit (280) controls the amount of gas supplied by the MFC (320a).

[0062] [Discharge Process]

[0063] When the first processing step is completed after a predetermined time has elapsed, the control unit (280) closes the valve (330a) to stop the supply of raw material gas from the gas nozzle (340a). Additionally, the control unit (280) opens the valve (330b) to spray inert gas from the opening (234) of the gas nozzle (340a).

[0064] Additionally, in the discharge process, the valve (330b) may be kept in a closed state and a depressurization process (depressurization process) may be performed, and as described above, a process of injecting inert gas into the interior of the reaction tube (203) (purging process) and a depressurization process may be performed repeatedly.

[0065] In this way, the processing process and the discharge process are made into one cycle, and by performing this a predetermined number of times, the processing of the wafer (200) is completed. Additionally, although the above was one type of processing gas, if there are two types of processing gas (for example, raw material gas and reaction gas), the first processing process (supplying raw material gas), the first discharge process, the second processing process (supplying reaction gas), and the second discharge process may be made into one cycle. In this case, the above-described gas supply system may be provided in two separate systems, one for the raw material gas and one for the reaction gas, in addition to the one for the raw material gas.

[0066] (Main components)

[0067] Next, an opening (234) formed on the circumference of a gas nozzle (340a) extended in the vertical direction and a discharge hole (344) formed at the tip of the gas nozzle (340a) will be described.

[0068] As described above, the opening (234) is formed to face in a direction parallel to (i.e., horizontal direction) the supply slit (235a) formed by being arranged vertically. Specifically, to face one supply slit (235a), the opening (234) is formed in a plurality (e.g., three) arranged horizontally, as shown in FIG. 5. That is, the rows of holes of the plurality of openings (234) formed by being arranged horizontally are arranged vertically. In other words, the rows of holes of the plurality of openings (234) are arranged in a direction parallel to the surface of the wafer (200).

[0069] Additionally, as shown in FIG. 1, the opening (234) is formed in the gas flow path of the gas nozzle (340a) through which gas flows from the bottom upward. And, a plurality of wafers (200) are all arranged within the area where the opening (234) is formed in the vertical direction.

[0070] Additionally, a first opening (234a) and a second opening (234b) are formed to supply gas between wafers (200) that are arranged in a loaded state in the processing room (201). Also, as shown in FIG. 5, among the three openings (234) arranged in a horizontal direction, the central first opening (234a) is opened to supply gas toward the center of the wafer (200). Additionally, a pair of second openings (234b) are formed symmetrically with respect to the reference line (CL1), with the reference line (CL1) passing through the center (CP1) of the first opening (234a) and the gas nozzle (340a) in between. Also, the direction in which this reference line (CL1) extends is the direction in which gas is supplied from the first opening (234a).

[0071] In this configuration, the first opening (234a) and the second opening (234b) spray gas in a direction that intersects (or is perpendicular to) the direction of gas flow within the gas nozzle (340a). Specifically, the first opening (234a) and the second opening (234b) spray gas in a horizontal direction. The gas sprayed from the first opening (234a) and the second opening (234b) is supplied between the wafers (200) loaded in the processing room (201).

[0072] In addition, if the angle at which the reference line (CL2) passing through the second opening (234b) and the center (CP1) is inclined with respect to the reference line (CL1) is defined as the inclination angle (R1 in FIG. 5), the inclination angle (R1) is a predetermined angle. That is, the direction in which the gas supplied from the second opening (234b) is directed is inclined by a predetermined inclination angle (R1) relative to the direction in which the gas supplied from the first opening (234a) is directed. Furthermore, the first opening (234a) and the second opening (234b) are circular in shape, and the hole diameters of the first opening (234a) and the second opening (234b) are predetermined values.

[0073] In this configuration, the gas injected from the first opening (234a) and supplied to the processing chamber (201) is directed toward the center of the wafer (200), and the gas injected from the second opening (234b) and supplied to the processing chamber (201) is directed toward the periphery of the wafer (200). Here, the shape of the opening (234) in this embodiment is circular as shown in the illustration, but it is not limited to this shape and may be elliptical, triangular, slit-shaped (square-shaped), or pentagonal. The same applies to the shape of the discharge hole (344). Furthermore, the discharge hole (344) does not need to be a single hole, but may be a plurality of holes. In this case, it goes without saying that the total cross-sectional area of ​​the plurality of holes forming the discharge hole (344) must be larger than the cross-sectional area of ​​the opening (234).

[0074] In addition, the gas nozzle (340a) of the present embodiment is a straight nozzle type, but is not limited to this type. For example, it may be a folding type (U-turn type) nozzle as shown in FIG. 16. FIG. 16a is a type in which a first opening (234a) and a second opening (234b) are respectively provided behind the folding part, and FIG. 16b is a type in which a first opening (234a) and a second opening (234b) are respectively provided in front of the folding part. Also, although not shown in FIG. 16, it goes without saying that an opening (234) may be provided before and after the folding part.

[0075] As shown in FIG. 16, if it is a folding type (U-turn type) nozzle, only the gas supplied from the opening (234) flows toward the wafer (200). That is, the gas emitted from the discharge hole (344), which will be described later, is directed toward the lower part of the reaction tube (203), so it does not affect the processing of the wafer (200).

[0076] Here, using FIG. 6, the gas flow when one opening is arranged vertically, as in a conventional gas nozzle, and the gas flow when a row of three openings (234) is arranged vertically, as in a gas nozzle (340a) of an embodiment, will be explained.

[0077] FIG. 6 shows the simulation results for the gas flow of a conventional gas nozzle and the simulation results for the gas flow of the gas nozzle (340a) of the present embodiment. As can be seen from this table, a return flow occurs in the conventional gas nozzle, while no return flow occurs in the gas nozzle (340a) of the present embodiment. Here, "return flow" refers to a flow in which a portion of the gas sprayed from the opening (234) flows in a U-shape on the wafer (200) and returns from the center side to the periphery side of the wafer (200).

[0078] In conventional gas nozzles, a return flow is prone to occur because gas is forcefully ejected from a single opening. The gas returning in the return flow eventually flows near the wafer edge and is exhausted. The return flow is one of the factors causing the film thickness at the wafer edge to become thicker than in other areas. In other words, the return flow is one of the factors that deteriorates the uniformity of film thickness within the wafer surface.

[0079] Meanwhile, in the gas nozzle (340a) of the embodiment, among the three openings (234), the first opening (234a) is directed toward the center of the wafer (200), and the other two second openings (234b) are inclined toward the reference line (CL1). By dispersing and spraying gas from each of the three openings (234), the generation of return flow is suppressed.

[0080] In addition, FIG. 6 shows the simulation results of the gas partial pressure (ΔPa) of a conventional gas nozzle and the simulation results of the gas partial pressure (ΔPa) of an embodiment gas nozzle (340a).

[0081] Here, "gas partial pressure (ΔP)" is explained using Fig. 7. The circumferential average of the gas partial pressure at the edge (region with a radius of 145 mm) of a wafer with an outer diameter of 300 mm and the circumferential average of the gas partial pressure at the center (region with a radius of 7 mm) are calculated, and the difference between them is the gas partial pressure (ΔPa) (hereinafter referred to as "ΔPa").

[0082] As shown in FIG. 6, the ΔPa of a conventional gas nozzle is 5.7Pa, and the ΔPa of an embodiment gas nozzle (340a) is 1.5Pa. The ΔPa of the embodiment gas nozzle (340a) is smaller than the ΔPa of a conventional gas nozzle. From this ΔPa result, it can be seen that the generation of return flow is suppressed in the embodiment gas nozzle (340a) compared to the conventional gas nozzle.

[0083] Additionally, at the tip (top) of the gas nozzle (340a), as shown in FIG. 5, a discharge hole (344) is formed to discharge gas in a direction different from that of the wafer (200). The diameter of the discharge hole (344) is larger than the diameter of the first opening (234a) and the diameter of the second opening (234b), or the cross-sectional area of ​​the discharge hole (344) is larger than the cross-sectional area of ​​the first opening (234a) and the cross-sectional area of ​​the second opening (234b).

[0084] In this configuration, by forming the discharge hole (344) in this way, the gas flowing inside the gas nozzle (340a) becomes equal in the vertical direction of the gas nozzle (340a). By doing so, the flow rate of the gas supplied from each of the first opening (234a) and the second opening (234b) becomes equal in the vertical direction.

[0085] Next, the results of performing a thermal fluid simulation by changing the hole diameter of the opening (234) of the gas nozzle (340a) will be explained using the table shown in FIGS. 8 and 9. In addition, other specifications other than the hole diameter are the same value. Also, the hole diameter of the first opening (234a) was kept constant at 2.7 mm.

[0086] · In Evaluation Example 1, the ratio of the hole diameter of the first opening (234a) to the hole diameter of the second opening (234b) (hole diameter ratio) was set to 1:1.

[0087] In Evaluation Example 2, the ratio of the hole diameter of the first opening (234a) to the hole diameter of the second opening (234b) (hole diameter ratio) was set to 1:0.85.

[0088] In Evaluation Example 3, the ratio of the hole diameter of the first opening (234a) to the hole diameter of the second opening (234b) (hole diameter ratio) was set to 1:0.75.

[0089] As shown in FIG. 8, regarding the gas flow on the wafer (200), for Evaluation Examples 1 and 2, no return flow occurred on the wafer (200). On the other hand, for Evaluation Example 3, a return flow occurred on the wafer (200). However, regarding the return flow in Evaluation Example 3, the degree of the return flow is suppressed compared to the return flow of the conventional example (see FIG. 6).

[0090] As shown in FIG. 9, regarding the ratio of the cross-sectional area of ​​the second opening (234b) to the cross-sectional area of ​​the first opening (234a), it was 1 in Evaluation Example 1, 0.7 in Evaluation Example 2, and 0.5 in Evaluation Example 3.

[0091] As shown in FIG. 9, regarding the ratio of the flow rate of gas supplied from the second opening (234b) to the flow rate of gas supplied from the first opening (234a), it was nearly 1 in Evaluation Example 1, 0.69 in Evaluation Example 2, and 0.49 in Evaluation Example 3.

[0092] Here, "nearly 1" means within ±5% of 1.

[0093] As shown in the table of FIG. 9, regarding ΔPa on the wafer (200), it was 1.5Pa in Evaluation Example 1, 2.7Pa in Evaluation Example 2, and 4.0Pa in Evaluation Example 3.

[0094] [A Study on Gas Flow on Wafers]

[0095] From the above results, it is believed that the critical condition for preventing return flow is the specification of Evaluation Example 2. Looking at the gas flow in the simulation of Evaluation Example 2, it appears that return flow is occurring at the edge of the wafer. However, since the few millimeters (3 mm to 5 mm) at the edge of the wafer is an area where no fine pattern is formed, the specification of Evaluation Example 2 can be considered as the critical condition for preventing return flow on the wafer.

[0096] That is, the flow rate ratio to prevent return flow is 0.7 or higher and 1.0 or lower. The cross-sectional area ratio of the opening to prevent return flow is 0.7 or higher and 1 or lower. And, the upper limit of ΔPa to prevent return flow is approximately 3.0 or lower.

[0097] Next, the results of a thermal fluid simulation performed by changing the inclination angle (R1) of the second opening (234b) formed in the gas nozzle (340a) will be explained using the table shown in FIG. 10. In addition, other specifications other than the inclination angle (R1) are the same value.

[0098] · In Evaluation Example 4, the inclination angle (R1) was set to 20 degrees.

[0099] · In Evaluation Example 5, the inclination angle (R1) was set to 25 degrees.

[0100] · In Evaluation Example 6, the inclination angle (R1) was set to 30 degrees.

[0101] · In Evaluation Example 7, the inclination angle (R1) was set to 35 degrees.

[0102] · In Evaluation Example 8, the inclination angle (R1) was set to 45 degrees.

[0103] As shown in FIG. 10, no return flow occurred for Evaluation Examples 4, 5, and 6. For Evaluation Examples 7 and 8, a return flow occurred. From this, it can be seen that no return flow occurs when the inclination angle (R1) is 20 degrees or more and 30 degrees or less. In addition, regarding the return flow in Evaluation Examples 7 and 8, the degree is suppressed compared to the return flow of the conventional example (see FIG. 6).

[0104] As shown in FIG. 10, in Evaluation Example 4, ΔPa was 2.6Pa, in Evaluation Example 5, ΔPa was 2.9Pa, in Evaluation Example 6, ΔPa was 3.1Pa, in Evaluation Example 7, ΔPa was 7.8Pa, and in Example 8, ΔPa was 9.7Pa. Accordingly, the upper limit of ΔPa for preventing return flow is 3.1Pa or less.

[0105] Next, the results of a thermal fluid simulation performed by changing the flow rate of the gas flowing through the gas nozzle (340a) will be explained using the table shown in FIG. 11. In addition, the hole diameters of the first opening (234a) and the second opening (234b) are 2.7 mm, and the same values ​​apply to other specifications.

[0106] · In Evaluation Example 9, the gas flow rate was set to 3 slm.

[0107] · In Evaluation Example 10, the gas flow rate was set to 5.9 slm.

[0108] · In Evaluation Example 11, the gas flow rate was set to 12 slm.

[0109] Regarding the flow rate uniformity of the gas supplied from the first opening (234a) and the second opening (234b), as shown in the table of FIG. 11, in Evaluation Example 9 it was ±1.2%, in Evaluation Example 10 it was ±1.52%, and in Evaluation Example 11 it was ±0.81%.

[0110] [Consideration of the opening (234)]

[0111] From the table shown in FIG. 11, the flow rate supplied from the first opening (234a) tends to be smaller than the flow rate supplied from the second opening (234b). In other words, the lower the gas flow rate supplied from the first opening (234a), the higher the flow rate uniformity, which is a desirable result for suppressing the return flow.

[0112] That is, by making the hole diameter or cross-sectional area of ​​the second opening (234b) larger than that of the first opening (234a), the gas flow rate supplied from the first opening (234a) increases, which is considered desirable for suppressing the return flow.

[0113] FIG. 17 takes the ratio of the diameter of the openings to the diameter of the openings (the ratio of the diameter of the openings based on the first opening (234a)) on the horizontal axis and the gas partial pressure (ΔPa) on the vertical axis. That is, FIG. 17 shows the dependence of the gas partial pressure (ΔPa) on the ratio of the diameters of the first opening (234a) and the second opening (234b). According to FIG. 17, since no return flow occurs when the value of the gas partial pressure (ΔPa) is less than about 3, it can be seen that no return flow occurs even when the ratio of the diameters is maximized (the ratio of the diameters in FIG. 17 is 3.33).

[0114] Here, the point where the value of the gas partial pressure (ΔPa) shown in Fig. 17 is 2.7 corresponds to the condition of Evaluation Example 2 shown in Fig. 8. Also, the point where the value of the gas partial pressure (ΔPa) is 1.5 corresponds to the condition of Evaluation Example 1 shown in Fig. 8. Furthermore, as the hole diameter ratio increases beyond 1, the value of the gas partial pressure (ΔPa) decreases, becomes gradual at the boundary of a hole diameter ratio of 1.85, and then transitions to an increase in the gas partial pressure (ΔPa). Therefore, it can be seen that the maximum value of the ideal hole diameter ratio is when the hole diameter ratio is 1.85.

[0115] Furthermore, in FIG. 17, it can be seen that when the hole diameter ratio is 1.49 or higher and 1.85 or lower, the value of the gas partial pressure (ΔPa) is nearly constant (about 0.8) and less than 1, and when the hole diameter ratio is 1.2 or higher and 2.1 or lower, the value of the gas partial pressure (ΔPa) is about 0.9 or lower. That is, if the hole diameter ratio is 1.2 or higher and 2.1 or lower, it can be determined that the gas is flowing evenly over the surface of the wafer (200). Under these conditions, since the gas can be supplied evenly to the surface of the wafer (200), for example, if the gas contributes to film formation, an improvement in the uniformity of the film formation within the wafer surface can be expected.

[0116] FIG. 18 shows four points (Evaluation Examples 12, 13, 14, and 15) with a hole diameter ratio greater than 1, selected from a simulation of 12 points shown in FIG. 17. From left to right, the hole diameter ratios are 1.19, 1.85, 2.41, and 3.33, respectively. FIG. 18 shows the simulation results for the case where the hole diameter ratio is greater than 1 compared to FIG. 8. As shown in these figures, it can be seen that no return flow occurs under any conditions.

[0117] Meanwhile, it was found that the occurrence of return flow is suppressed when the flow rate of the second opening (234b) is greater than the flow rate of the first opening (234a), but it is unclear why the value of ΔPa turns upward when the hole diameter ratio becomes greater than 1.85. Therefore, as a result of closely examining the simulation results for hole diameter ratios of 2.41 and 3.33, it was found that there was stagnation in the gas flow from the first opening (234a). As shown in FIG. 18, as a result of the simulation for hole diameter ratios of 2.41 and 3.33, the flow rate of the second opening (234b) relative to the flow rate of the first opening (234a) (flow rate ratio) is approximately 14 and approximately 50, respectively, and the flow rate of the first opening (234a) is extremely low.

[0118] When the flow rate of the second opening (234b) increases and the flow rate of the first opening (234a) decreases, the value of ΔPa changes to an upward trend, and stagnation occurs. It is believed that the cause is the return flow of the gas supplied from the second opening (234b). Up until now, gas has been supplied from the second opening (234b) to suppress the flow of gas from the first opening (234a) and to suppress the occurrence of the return flow. However, if the flow rate of the second opening (234b) is too high, a return flow of gas supplied from the second opening (234b) occurs, causing the gas flow to be directed toward the center rather than toward the exhaust direction. Since the flow rate of gas supplied from the first opening (234a) is low relative to this return flow, it is difficult to eliminate the return flow, and thus it is believed that the gas supplied from the first opening (234a) is stagnating.

[0119] Meanwhile, the reason why no return flow occurs in the simulation results is that, in addition to the influence of the gas supplied from the first opening (234a), the second opening (234b) is provided in two places with the first opening (234a) in between, so even if a return flow of gas supplied from the second opening (234b) occurs, it is thought that the gas flow directed toward the center is smoothly offset. On the other hand, regarding the gas flow that does not go toward the center due to the return flow, since the second opening (234b) is provided toward the periphery of the wafer (200) from the beginning, it is thought that there is almost no influence on the gas flow on the wafer (200).

[0120] In this way, the reason why the value of ΔPa changes to an upward trend when the flow rate of the second opening (234b) increases and the flow rate of the first opening (234a) decreases is thought to be the stagnation of gas supplied from the first opening (234a) caused by the return flow of gas supplied from the second opening (234b). On the other hand, the reason why the value of ΔPa increases when the flow rate of the first opening (234a) increases and the flow rate of the second opening (234b) decreases is the return flow of gas supplied from the first opening (234a). Returning to Fig. 17, when the hole diameter ratio is less than 1.19, a return flow of gas supplied from the first opening (234a) occurs, and ΔPa rises rapidly due to this effect, whereas when the hole diameter ratio is greater than 2.1, stagnation of gas supplied from the first opening (234a) occurs, and ΔPa rises gradually due to this effect.

[0121] That is, the return flow of gas supplied from the first opening (234a) has a significant influence on the gas flow on the wafer (200), while the stagnation of gas supplied from the first opening (234a) has a linear influence on the gas flow on the wafer (200). This is thought to be an influence on the flow rate of gas supplied from the first opening (234a) rather than an influence on the return flow of gas supplied from the second opening (234b). In other words, when, for example, a film-forming contributing gas is supplied to the wafer (200), it can be seen that the influence of the return flow of gas supplied from the first opening (234a) is significant.

[0122] Returning to Fig. 18, for example, if the hole diameter ratio is 3.33, ΔPa is 2.1Pa. Additionally, as a result of the simulation, no return flow was observed on the wafer (200) (there is no flow indicating the return flow in Fig. 18). This is because the return flow of the gas supplied from the second opening (234b) is offset, so the influence of the return flow on ΔPa is thought to be significantly smaller compared to the first opening (234a). However, it is thought that the influence of stagnation on the wafer (200) facing the first opening (234a) is significantly reflected. That is, the influence of the return flow of the gas supplied from the second opening (234b) is a factor in the stagnation of the gas supplied from the first opening (234a), but it is thought to have an indirect influence on ΔPa.

[0123] Returning to Fig. 8, for example, if the hole diameter ratio is 0.85 (Evaluation Example 2), ΔPa becomes 2.7Pa, and as a result of the simulation, no return flow was observed on the wafer (200) (there is no flow indicating the return flow in Fig. 8). Therefore, it was explained that even if a return flow occurred, the return flow on the wafer (200) was suppressed, but strictly speaking, although a return flow occurred on the wafer (200), it was eliminated.

[0124] Returning to Fig. 17, when the hole diameter ratio is 1.19 or greater and 2.1 or less, ΔPa is stabilized at a value of 0.8 or greater and 0.9 or less. Therefore, it is thought that no return flow occurred from either the first opening (234a) or the second opening. Or, even if a return flow occurred, it is thought that it was adequately offset.

[0125] According to the present embodiment, even if the occurrence of a return flow appears in the simulation results, considering the effect on the processing on the wafer (200), it can be seen that ΔPa should be 2.7 or less. That is, as shown in FIG. 17, expressed as a hole diameter ratio, it should be 0.85 or more and 3.33 or less. At this time, the cross-sectional area ratio is 0.7 or more and 11.1 or less. Furthermore, even if a return flow was occurring, if it is determined in the simulation results that the return flow is suppressed (removed), as shown in FIG. 18, the gas partial pressure (ΔPa) should be 2.1 or less, and the hole diameter ratio shown in FIG. 17 should be 0.93 or more and 2.25 or less. Additionally, conditions where there is no effect of stagnation as well as return flow are desirable, for example, the gas partial pressure (ΔPa) should be 0.9 or less, and the hole diameter ratio should be 1.1 or more and 2.1 or less.

[0126] Furthermore, although the above description focused on the hole diameter ratio, this is merely one indicator, and the same applies to gas flow rate, cross-sectional area ratio, etc.

[0127] (1st variation)

[0128] Next, the first variant example is described using FIG. 12. A pair of gas nozzles (540a, 540b) of the first variant form are provided, and the upper end of the gas nozzle (540a) and the upper end of the gas nozzle (540b) are connected by a U-shaped (U-shaped) connecting part (542) that is open at the bottom.

[0129] Specifically, a gas nozzle (540a) through which gas flows from below to above and a gas nozzle (540b) through which gas flows from above to below are provided. The gas nozzle (540a) and the gas nozzle (540b) are arranged in the depth direction of the device. Additionally, the external shape of the gas nozzles (540a, 540b) is an elliptical shape extending in the width direction of the device.

[0130] In the gas nozzle (540a), a pair of openings (534) formed in a horizontal direction are formed in a vertical direction. The openings (534) consist of a first opening (534a) and a second opening (534b). The first opening (534a) and the second opening (534b) are arranged symmetrically with respect to a reference line (CL3) extending in the longitudinal direction of the elliptical gas nozzle (540a). Additionally, the first opening (534a) is positioned to spray gas from the gas nozzle (540b) side toward the center side of the wafer (200).

[0131] Likewise, in the gas nozzle (540b), a pair of openings (534) formed in a horizontal direction are formed in a vertical direction. The openings (534) consist of a first opening (534c) and a second opening (534d). The first opening (534c) and the second opening (534d) are arranged symmetrically with respect to a reference line (CL4) extending in the longitudinal direction of the elliptical gas nozzle (540b). Furthermore, the first opening (534c) is arranged to spray gas from the gas nozzle (540a) side and also toward the center side of the wafer (200). Here, the term "center side" includes not only the direction in which the gas supplied from the first opening (534a) and the first opening (534c), respectively, is mixed at the center of the wafer (200), but also the direction in which it is mixed on the wafer (200). In addition, it is preferable that the mixing direction be before reaching the center of the wafer (200).

[0132] Additionally, the first opening (534a) and the second opening (534b) formed in the gas nozzle (540a), and the first opening (534c) and the second opening (534d) formed in the gas nozzle (540b) are provided on the same plane.

[0133] In this configuration, the gas sprayed from the first opening (534a) of the gas nozzle (540a) and the gas sprayed from the first opening (534c) of the gas nozzle (540b) are mixed before reaching the wafer (200), or before reaching the center of the wafer (200), that is, between the periphery and the center of the wafer (200). In addition, in this modified example, a nozzle having a U-shape is disclosed, but is not limited to this shape and may be a V-shape nozzle, or may be an N-shape or W-shape nozzle. In addition, in this modified example, the number of openings (first opening and second opening) may be two or more, and for example, may be three, as in the embodiment.

[0134] (2nd variation)

[0135] Next, a second variant is described using FIG. 13. In the second variant, a pair of gas nozzles (640a, 640b) are provided, and the lower end of the gas nozzle (640a) and the lower end of the gas nozzle (640b) are connected by a U-shaped (U-shaped) connecting part (642) that is open at the top. Also, the gas nozzle (640a) and the gas nozzle (640b) are arranged in the depth direction of the device. Furthermore, the external shape of the gas nozzles (640a, 640b) is an elliptical shape extending in the width direction of the device.

[0136] In the gas nozzle (640a), a pair of openings (634) formed in a horizontal direction are formed in a vertical direction. The openings (634) consist of a first opening (634a) and a second opening (634b). The first opening (634a) and the second opening (634b) are arranged symmetrically with respect to a reference line (CL5) extending in the longitudinal direction of the elliptical gas nozzle (640a). Additionally, the first opening (634a) is arranged to spray gas from the gas nozzle (640b) side and also in the direction of the center side of the wafer (200).

[0137] Likewise, in the gas nozzle (640b), a pair of openings (634) formed in a horizontal direction are formed in a vertical direction. The openings (634) consist of a first opening (634c) and a second opening (634d). The first opening (634c) and the second opening (634d) are arranged symmetrically with respect to a reference line (CL6) extending in the longitudinal direction of the elliptical gas nozzle (640b). The first opening (634c) is positioned to spray gas from the gas nozzle (640a) side and also toward the center of the wafer (200).

[0138] Additionally, the first opening (634a) and the second opening (634b) formed in the gas nozzle (640a), and the first opening (634c) and the second opening (634d) formed in the gas nozzle (640b) are provided on the same plane.

[0139] In this configuration, the gas sprayed from the first opening (634a) of the gas nozzle (640a) and the gas sprayed from the first opening (634c) of the gas nozzle (640b) are mixed before reaching the wafer (200) or are mixed on the wafer (200). In addition, although only a U-shaped nozzle is disclosed in this modified example, it is not limited to this shape and may be Y-shaped, and the gas nozzle (640) in which the opening (634) is provided may be concave. In addition, in this modified example, the number of openings may be two or more, and for example, may be three, as in the embodiment.

[0140] Next, a third variant is described using FIG. 14. The third variant is a configuration in which multiple straight nozzles are provided. As shown in FIG. 14, an I-shaped gas nozzle (740a) and a gas nozzle (740b) that spray gas are provided separately. Furthermore, the gas nozzle (740a) and the gas nozzle (740b) are not connected but are arranged in the depth direction of the device. Additionally, the external shape of the gas nozzles (740a, 740b) is an elliptical shape extending in the width direction of the device.

[0141] In the gas nozzle (740a), a pair of openings (734) formed in a horizontal direction are formed in a vertical direction. The openings (734) consist of a first opening (734a) and a second opening (734b). The first opening (734a) and the second opening (734b) are arranged symmetrically with respect to a reference line (CL7) extending in the longitudinal direction of the elliptical gas nozzle (740a). Additionally, the first opening (734a) is positioned to spray gas from the gas nozzle (740b) side toward the center side of the wafer (200).

[0142] Likewise, in the gas nozzle (740b), a pair of openings (734) formed in a horizontal direction are formed in a vertical direction. The openings (734) consist of a first opening (734c) and a second opening (734d). The first opening (734c) and the second opening (734d) are arranged symmetrically with respect to a reference line (CL8) extending in the longitudinal direction of the elliptical gas nozzle (740b). The first opening (734c) is positioned to spray gas from the gas nozzle (740a) side and also toward the center side of the wafer (200).

[0143] Additionally, the first opening (734a) and the second opening (734b) formed in the gas nozzle (740a), and the first opening (734c) and the second opening (734d) formed in the gas nozzle (740b) are provided on the same plane.

[0144] In this configuration, the gas sprayed from the first opening (734a) of the gas nozzle (740a) and the gas sprayed from the first opening (634c) of the gas nozzle (740b) are mixed before reaching the wafer (200). In addition, regarding the number of openings in this variant, it may be two or more, and for example, three, as in the embodiment.

[0145] In addition, in the present embodiment, the flow rate of the gas supplied from the second opening, the hole diameter of the second opening, and the cross-sectional area of ​​the second opening may be configured to be larger than the flow rate of the gas supplied from the first opening, the hole diameter of the first opening, and the cross-sectional area of ​​the first opening, respectively. By doing so, the return flow of the gas supplied from the first opening can be suppressed. And, since the gas supplied from the first opening and the second opening, respectively, flows evenly within the plane of the wafer (200), the in-plane uniformity of the film thickness in the wafer (200) can be improved.

[0146] Additionally, in the present embodiment, regarding the two second openings (234b) provided, the flow rate of gas supplied from each of the two second openings (234b), the hole diameter of each of the two second openings (234b), and the cross-sectional area of ​​the two second openings (234b) are nearly identical or identical, but at least one may be nearly identical or identical. By doing so, the return flow of gas supplied from the first opening (234a) can be suppressed.

[0147] In addition, in this embodiment, the angle of inclination of the second opening (234b) relative to the direction in which the gas supplied from the first opening (234a) is directed can be determined based on the arrangement relationship between the first opening (234a) and the wafer (200) as the object to be processed. By doing so, the gas supplied from the second opening (234b) can be supplied in a direction toward the periphery of the wafer (200) in the processing chamber (201). Accordingly, the return flow of the gas supplied from the first opening (234a) can be suppressed.

[0148] According to the present embodiment, at least one of the effects (1) to (12) described below can be achieved.

[0149] (1) According to the present embodiment, as can be seen from the results of each thermal fluid simulation, the return flow of the gas supplied to the processing chamber (201) by the first opening (234a) is suppressed by the gas supplied to the processing chamber (201) by the second opening (234b). As a result, the gas supplied from the first opening (234a) and the second opening (234b), respectively, flows evenly within the surface of the wafer (200), so the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to the conventional configuration.

[0150] (2) According to the present embodiment, as shown in the table of FIG. 9 and FIG. 18, the flow rate of the gas supplied from the second opening (234b) is set to 0.7 or more and 49.0 or less with respect to the flow rate of the gas supplied from the first opening (234a), thereby suppressing the return flow of gas compared to FIG. 3. As a result, since the gas supplied from the first opening (234a) and the second opening (234b), respectively, flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to FIG. 3.

[0151] (3) According to the present embodiment, as shown in the table of FIG. 9, the cross-sectional area of ​​the second opening is set to be 0.7 or more and 11.1 or less with respect to the cross-sectional area of ​​the first opening, thereby suppressing the return flow of gas compared to Evaluation Example 3. As a result, since the gas supplied from the first opening (234a) and the second opening (234b), respectively, flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to Evaluation Example 3.

[0152] (4) According to the present embodiment, as shown in the table of FIG. 8, evaluation examples 1, 2, 12, 13, 14, and 15, the hole diameter of the second opening (234b) is set to a hole diameter ratio of 0.85 or more and 3.33 or less with respect to the hole diameter of the first opening (234a), thereby suppressing the return flow of gas compared to evaluation example 3. As a result, since the gas supplied from the first opening (234a) and the second opening (234b), respectively, flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to evaluation example 3.

[0153] (5) According to the present embodiment, as shown in Evaluation Examples 4 to 6 in the table of FIG. 10, the inclination angle (R1) of the second opening (234b) is set to 20 degrees or more and 30 degrees or less, thereby suppressing the return flow of gas compared to Evaluation Examples 7 and 8. As a result, since the gas supplied from the first opening (234a) and the second opening (234b), respectively, flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to Evaluation Examples 7 and 8.

[0154] (6) According to the present embodiment, two second openings (234b) are provided, and in Evaluation Examples 1, 2, 3, 12, 13, 14, and 15 shown in the table of FIG. 8, FIG. 9, and FIG. 18, the flow rate of gas supplied from each of the two second openings (234b) is configured to be nearly the same or equal. By doing so, the return flow of gas supplied from the first opening (234a) can be suppressed. In addition, since the gas supplied from the first opening (234a) and the second opening (234b) flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to the conventional configuration.

[0155] In addition, in the present disclosure, "nearly identical" means that, based on one side, the other side is within ±95% of one side.

[0156] (7) According to the present embodiment, two second openings (234b) are provided, and in evaluation examples 1, 2, 3, 12, 13, 14, and 15 shown in the table of FIG. 8, FIG. 9, and FIG. 18, the diameter of each of the two second openings (234b) is configured to be the same. By doing so, the return flow of gas supplied from the first opening (234a) can be suppressed. In addition, since the gas supplied from the first opening (234a) and the second opening (234b) flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to the conventional configuration.

[0157] (8) According to the present embodiment, two second openings (234b) are provided, and in evaluation examples 1, 2, 3, 12, 13, 14, and 15 shown in the table of FIG. 8, FIG. 9, and FIG. 18, the cross-sectional area of ​​the two second openings (234b) is configured to be the same. By doing so, the return flow of gas supplied from the first opening (234a) can be suppressed. In addition, since the gas supplied from the first opening (234a) and the second opening (234b) flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved compared to the conventional configuration.

[0158] (9) According to the present embodiment, a discharge hole (344) is formed at the tip of the gas nozzle (340a). Because of this, the gas flowing inside the gas nozzle (340a) is equalized in the vertical direction of the gas nozzle (340a), thereby making the flow rate of the gas supplied from each of the first opening (234a) and the second opening (234b) equal in the vertical direction.

[0159] (10) According to the present embodiment, a first opening (234a) and a second opening (234b) are formed so that gas is supplied between wafers (200) that are placed in a loaded state in a processing chamber (201). By doing so, the flow rate of gas from the first opening (234a) supplied between wafers (200) is made smaller than the flow rate of gas from the second opening (234b), thereby making the gas supplied between wafers (200) equal. The same applies to the hole diameter ratio (hole diameter) and cross-sectional area ratio (cross-sectional area).

[0160] (11) According to the present embodiment, the gas supplied from the first opening (534a, 634a) of one gas nozzle (540a, 640a) and the gas supplied from the first opening (534c, 634c) of the other gas nozzle (540b, 640b) are mixed before reaching the wafer (200). By doing so, the gas supplied from each first opening (534a, 534c, 634a, 634c) is mixed and then supplied evenly on the wafer (200). Thus, since no return flow occurs on the wafer (200) and the gas flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface can be improved.

[0161] (12) According to the present embodiment, the gas supplied from the first opening (734a) of one gas nozzle (740a) and the gas supplied from the first opening (734c) of the other gas nozzle (740b) are mixed before reaching the wafer (200). As a result, the gas supplied from each first opening (734a, 734c) is mixed and then supplied evenly on the wafer (200). Thus, no return flow occurs on the wafer (200), and since the gas flows evenly within the surface of the wafer (200), the uniformity of the film thickness within the surface of the wafer (200) can be improved.

[0162] Other variations

[0163] Hereinafter, other variations of the present disclosure will be described with reference to FIG. 15. In addition, parts identical to the present embodiment will be omitted, and parts different from the present embodiment will be described mainly.

[0164] In the circumferential direction of the reaction tube (203), a pair of nozzle chambers (822) extending in the vertical direction are provided on both sides of the nozzle chamber (222), as shown in FIG. 15. Specifically, a nozzle chamber (822a) is provided on the inside in the depth direction of the device, and a nozzle chamber (822b) is provided on the front in the depth direction of the device.

[0165] A gas nozzle (840a) is disposed in the nozzle chamber (822a), and the gas nozzle (840a) is configured as an I-shaped (I-shaped) long nozzle. A gas nozzle (840b) is disposed in the nozzle chamber (822b), and the gas nozzle (840b) is configured as an I-shaped (I-shaped) long nozzle.

[0166] In the gas nozzles (840a, 840b), circular openings (834a, 834b) are formed in a vertical direction. Inert gas is sprayed toward the processing chamber (201) from the openings (834a, 834b) of the gas nozzles (840a, 840b). A second gas supply unit (842) is configured including the gas nozzles (840a, 840b) having circular openings (834a, 834b).

[0167] In this configuration, the flow rate of gas supplied from the openings (834a, 834b) of the gas nozzles (840a, 840b) is different from the flow rate of gas supplied from the second opening (234b) and the flow rate of gas supplied from the first opening (234a). Additionally, when gas is being injected from the opening (234) of the gas nozzle (340a), a minute amount of inert gas is injected from the openings (834a, 834b) of the gas nozzles (840a, 840b). By doing so, back diffusion is suppressed. Furthermore, the inert gas injected from the openings (834a, 834b) is suppressed to a flow rate that does not contribute to the flow of gas injected from the opening (234).

[0168] Furthermore, it is clear to those skilled in the art that the present disclosure is not limited to the embodiments described herein, and that various other embodiments are possible. For example, although not specifically described in the above embodiments, the number of second openings may be configured to be greater than the number of first openings.

[0169] In addition, in the above embodiment, the first opening and the second opening are provided separately. However, for example, the gas injected from the first opening is configured to be injected toward the center of the wafer (200) in the processing chamber, and the gas injected from the second opening is configured to be injected toward the periphery of the wafer (200) in the processing chamber (201), so that the first opening and the second opening are provided in a slit type.

[0170] In addition, the substrate processing device (10, 810) may be used not only as a semiconductor manufacturing device, but also as a device for processing glass substrates such as an LCD device, for example.

[0171] In addition, as a film formation treatment, it may be, for example, a treatment forming an oxide film, a nitride film, or both, or a treatment forming a film containing metal, and furthermore, the present embodiment may also be applied to treatments such as annealing, oxidation, nitriding, and diffusion. Explanation of the symbols

[0172] 10: Substrate processing device (an example of a processing device) 200: Wafer (an example of a substrate) 201: Processing Room

Claims

Claim 1 A gas supply unit having a first opening and a second opening for supplying gas to a processing chamber in which a substrate is placed, wherein the first opening and the second opening are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first opening is supplied in the direction of the center of the substrate, the gas supplied from the second opening is supplied in the direction of the periphery of the substrate, and the direction of the gas supplied from the second opening is configured to form a predetermined angle with respect to the direction of the gas supplied from the first opening, and the first opening and the second opening are provided in the middle of a flow path in which the gas flows in a direction perpendicular to the surface of the substrate, and at the end of the flow path of the gas flowing in the vertical direction, a discharge hole is formed to discharge the gas so as not to be directed toward the substrate. Claim 2 A gas supply unit according to claim 1, wherein the flow rate of the gas supplied from the second opening is configured to be 0.7 or more and 49.0 or less with respect to the flow rate of the gas supplied from the first opening. Claim 3 A gas supply unit according to claim 1, wherein the area of ​​the second opening is configured to be 0.7 or more and 11.1 or less with respect to the area of ​​the first opening. Claim 4 A gas supply unit according to claim 1, wherein the first opening and the second opening are circular, and the hole diameter of the second opening is configured to be 0.85 or more and 3.3 or less with respect to the hole diameter of the first opening. Claim 5 A gas supply unit according to claim 1, wherein the angle formed by the direction of the gas supplied from the second opening is 20 degrees or more and 30 degrees or less, based on the direction of the gas supplied from the first opening. Claim 6 A gas supply unit according to claim 1, wherein the second openings are provided in plurality, and configured such that at least one of the flow rate of gas supplied from each of the plurality of second openings, the hole diameter of each of the plurality of second openings, and the area of ​​the plurality of second openings is nearly identical. Claim 7 A gas supply unit according to claim 1, wherein the first opening and the second opening are configured to supply gas in a direction intersecting with the direction in which the gas flows in the vertical direction. Claim 8 delete Claim 9 A gas supply unit according to claim 1, wherein the diameter of the discharge hole is larger than the diameter of the first opening and the diameter of the second opening, or the area of ​​the discharge hole is larger than the area of ​​the first opening and the area of ​​the second opening. Claim 10 A gas supply unit according to claim 1, wherein a plurality of the above substrates are arranged to be loaded in the processing chamber, and the first opening and the second opening are arranged to supply the gas between the substrates. Claim 11 A gas supply unit according to claim 1, wherein the flow rate of gas supplied from the second opening, the diameter of the hole of the second opening, and the area of ​​the second opening are each configured to be larger than the flow rate of gas supplied from the first opening, the diameter of the hole of the first opening, and the area of ​​the first opening. Claim 12 A gas supply unit according to claim 1, wherein the first opening and the second opening are provided in plurality, and the gas supplied from each of the second openings is configured so as not to be mixed. Claim 13 In paragraph 12, a plurality of supply pipe sections are provided in which the first opening and the second opening are formed, and the supply pipe sections are connected by U-shaped or Y-shaped connecting sections, in a gas supply section. Claim 14 A gas supply unit having a plurality of first openings and a plurality of second openings for supplying gas to a processing chamber in which a substrate is placed, wherein the first openings and the second openings are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first openings is supplied in the direction of the center of the substrate, the gas supplied from the second openings is supplied in the direction of the periphery of the substrate, and the direction of the gas supplied from the second openings is configured to form a predetermined angle with respect to the direction of the gas supplied from the first openings, and the gas supplied from each of the first openings is configured to be mixed before reaching the substrate. Claim 15 A gas supply unit having a plurality of first openings and a plurality of second openings for supplying gas to a processing chamber in which a substrate is placed, wherein the first openings and the second openings are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first openings is supplied in the direction of the center of the substrate, the gas supplied from the second openings is supplied in the direction of the periphery of the substrate, the direction of the gas supplied from the second openings is configured to form a predetermined angle with respect to the direction of the gas supplied from the first openings, and the gas supplied from each of the first openings is configured to be mixed before reaching the center of the substrate. Claim 16 A processing apparatus having a first opening and a second opening that supply gas to a processing chamber in which a substrate is placed, wherein the first opening and the second opening are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first opening is supplied in the direction of the center of the substrate, the gas supplied from the second opening is supplied in the direction of the periphery of the substrate, and the direction of the gas supplied from the second opening is configured to form a predetermined angle with respect to the direction of the gas supplied from the first opening, and the first opening and the second opening are provided in the middle of a flow path in which the gas flows in a direction perpendicular to the surface of the substrate, and at the end of the flow path of the gas flowing in the vertical direction, a discharge hole is formed to discharge the gas so as not to be directed toward the substrate. Claim 17 A processing device according to claim 16, wherein the angle formed by the direction of the gas supplied from the second opening, based on the direction of the gas supplied from the first opening, is determined based on the arrangement relationship between the first opening of the first gas supply unit and the substrate. Claim 18 A processing device according to claim 16, having a plurality of first gas supply units, wherein each gas supplied from the first opening of the plurality of first gas supply units is configured to be mixed. Claim 19 A processing device according to claim 16, comprising a second gas supply unit provided on both sides of the first gas supply unit and supplying a gas different from the gas supplied from the first gas supply unit to the processing room. Claim 20 A method for manufacturing a semiconductor device having a process of processing a substrate by supplying gas to a processing chamber using a gas supply unit having a first opening and a second opening, each of which supplies gas to a processing chamber in which a substrate is placed, wherein the first opening and the second opening are arranged in a direction parallel to the surface of the substrate, the gas supplied from the first opening is supplied in the direction of the center of the substrate, the gas supplied from the second opening is supplied in the direction of the periphery of the substrate, and the direction of the gas supplied from the second opening is configured to form a predetermined angle with respect to the direction of the gas supplied from the first opening, wherein the first opening and the second opening are provided in the middle of a flow path in which the gas flows in a direction perpendicular to the surface of the substrate, and at the end of the flow path of the gas flowing in the vertical direction, a discharge hole is formed to discharge the gas so as not to supply the gas toward the substrate. Claim 21 A gas supply method for supplying gas to a processing room in which a substrate is placed, using a gas supply unit described in any one of claims 1 to 7 and claims 9 to 15. Claim 22 A processing device equipped with a gas supply unit as described in paragraph 14 or 15. Claim 23 A method for manufacturing a semiconductor device having a process of supplying the gas to a processing chamber in which a substrate is placed, using the gas supply unit described in claim 14 or 15.

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