Reactor capable of continuous processing and silicon-based anode material manufacturing equipment including the same
The reactor and manufacturing facility address inefficiencies in silicon-based cathode material production by enabling continuous processing with a rotating screw part and baffles, improving uniformity and yield in silicon-based cathode material manufacturing.
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- OCI CO LTD(KR)
- Filing Date
- 2023-12-26
- Publication Date
- 2026-07-15
AI Technical Summary
Existing silicon-based cathode material manufacturing processes face challenges with low mass production efficiency, compromised post-processing uniformity, and decreased yield due to the use of batch methods for handling small, high-specific-surface-area powders, particularly in the production of silicon-based anode materials.
A reactor and manufacturing facility that enables continuous processing by using a rotating screw part with baffles and ultrasonic devices to uniformly stir and move powders, preventing adhesion and ensuring uniform reaction with gases, while incorporating multiple reactors for sequential processing stages.
The solution achieves continuous processing of porous carbon structures, nano-sized silicon particles, and oxidation prevention layers, enhancing mass production efficiency and post-processing uniformity, and minimizing material loss.
Smart Images

Figure 112023145321296-PAT00001_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a reactor capable of continuous processing and a silicon-based cathode material manufacturing facility including the same, and more specifically, to a reactor capable of continuous processing and a silicon-based cathode material manufacturing facility including the same that can achieve mass production capability and uniformity of post-processing in the manufacture of silicon-based cathode materials. Background Technology
[0002] In general, secondary batteries have become an irreplaceable core component of electric devices. With the trend toward increasing capacity and reducing weight in secondary batteries, existing secondary battery technology can no longer meet the surging demand, such as extending the driving range of electric vehicles and reducing the weight of intelligent wearable devices. The core of the aforementioned problem lies in the practical issue of the low energy density of existing secondary batteries.
[0003] Currently, graphite-based anode materials are the most widely used as anode materials for secondary batteries, but they have a theoretical capacity of only 372 mAh / g per gram. Since existing technology is very close to the theoretical capacity per gram, there is an urgent need to develop anode materials with a higher capacity per gram. Silicon anode materials have been extensively studied because they have a very high capacity per gram (theoretical capacity per gram: 4200 mAh / g).
[0004] In addition, silicon anode materials are considered as next-generation anode materials due to advantages such as low lithium desorption potential and abundant raw material sources.
[0005] All materials handled in the manufacturing process of these silicon-based cathode materials are in powder form. Since the particle size of these powders is very small (<10㎛) and the specific surface area is high (>900 m² / g), making them difficult to handle, they are produced using a batch method.
[0006] Consequently, problems arise such as low mass production efficiency and post-processing uniformity, as well as a decrease in yield that inevitably occurs during the process of undergoing multiple batch processes.
[0007] When manufacturing silicon-based cathode materials through a batch process, the following problems may occur.
[0008] First, mass production efficiency may be reduced. Since the batch method requires processing powders individually, productivity is lower compared to continuous processes. In particular, the productivity decline in the batch process is even more severe in the manufacturing of silicon-based anode materials, as the particles are very small and have a high specific surface area, making them difficult to handle.
[0009] Second, the uniformity of post-processing may be compromised. Since the batch method processes powders individually, the uniformity of the post-processing stage can be reduced. In particular, the post-processing stage for manufacturing silicon-based anode materials is very complex and demanding; in the batch process, workers must perform these steps manually one by one, making it difficult to ensure uniform quality.
[0010] Third, yield may decrease. Batch processing inevitably leads to a decline in yield due to the multiple manufacturing steps. In particular, the yield reduction is even more severe in the manufacturing process of silicon-based anode materials because the particles are very small and have a high specific surface area, making them difficult to handle.
[0011] For this reason, in recent years, there has been a demand for the development of technology that can solve conventional problems by converting the silicon-based cathode material manufacturing process into a continuous process and automating the post-processing process to improve productivity while also increasing the uniformity of the post-processing process. Prior art literature
[0012] Republic of Korea Registered Patent No. 10-1158056 (Registration Date: June 13, 2012) The problem to be solved
[0013] The present invention has been devised to solve the aforementioned problems, and the objectives of the present invention are as follows.
[0014] The objective of the present invention is to provide a reactor capable of continuous processing and a silicon-based cathode material manufacturing facility including the same, which can provide uniformity in post-processing and continuously process a porous carbon structure, a nano-sized silicon particle CVD / CVI, and a silicon oxidation prevention layer by applying a configuration in which a plurality of baffles are formed at specific positions of screw blades formed on the rotation axis of the screw part while the flow of powder and gas is flowed using a rotating screw part during the process of manufacturing a silicon-based cathode material, thereby uniformly moving the powder and preventing the powder from adhering to the screw blades.
[0015] The above-mentioned objectives of the present invention are not limited to those mentioned above, and other objectives and advantages of the present invention not mentioned may be understood from the following description and will be more clearly understood by the embodiments of the present invention. Furthermore, it will be readily apparent that the objectives and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims. means of solving the problem
[0016] To achieve the above objectives, the present invention provides a reactor capable of continuous processing.
[0017] The above-described reactor capable of continuous processing comprises: a reactor body part that follows a horizontal direction, has a reaction space formed inside, and is exposed to a heating temperature set from the outside; a reaction gas supply part that supplies one or more reaction gases to the reaction space through one end of the reactor body part; a powder supply part that is connected to the circumference of the reactor body part and supplies powder to the reaction space of the reactor body part; a screw part that is rotatably supported at both ends in the reaction space and rotates by power provided from the outside to continuously stir the reaction gas supplied to the reaction space and the powder along the axial direction from one side to the other of the reaction space to produce a reaction product while conveying it; a rotating part that rotates the screw part; and a discharge part formed at the lower end of the other end of the reactor body part and discharges the conveyed reaction product.
[0018] Here, at multiple locations of the above-mentioned reactor body,
[0019] A plurality of auxiliary gas supply units that supply auxiliary gas to the reaction space are formed at intervals,
[0020] The above plurality of auxiliary gas supply units,
[0021] It is preferable to connect the above-mentioned reaction gas supply unit through the auxiliary gas supply path.
[0022] And the above screw part,
[0023] A rotating shaft with both ends rotatably supported inside the main body of the reactor, and
[0024] It includes screw blades formed in a screw shape around the above-mentioned rotational axis,
[0025] The above-mentioned rotating part preferably includes a rotating motor connected to the above-mentioned rotating shaft in an axial manner to rotate the above-mentioned rotating shaft to achieve a set rotational speed according to the control of the control unit.
[0026] In addition, on the outer surface of the above screw blades,
[0027] It is preferable that a baffle of a certain shape be formed to protrude, and that one or multiple baffles be installed.
[0028] Also, the above baffle is,
[0029] It is preferable that it be formed on at least one side of the above screw blades.
[0030] In addition, at multiple locations around the perimeter of the main body of the reactor,
[0031] An ultrasonic generating device is installed, but,
[0032] It is preferable that the above-described ultrasonic generating device transmits ultrasonic waves of a level set according to the control of the control unit into the interior of the reactor body through the circumference of the reactor body.
[0033] In addition, around the other end of the main body of the reactor,
[0034] It is desirable to connect a waste gas discharge unit that discharges residual waste gas from the above reaction space to the outside.
[0035] According to another embodiment, the present invention may provide a silicon-based cathode material manufacturing facility comprising a structure in which a plurality of reactors capable of continuous processing as described above are sequentially connected. Effects of the invention
[0036] Through the means of solving the above problem, the present invention has the effect of enabling the continuous processing of porous carbon structures, nano-sized silicon particles CVD / CVI, and carbon deposition processes, which are silicon oxidation prevention layers, and providing uniformity in post-processing processes by applying a configuration in which powder and gas flow are flowed using a rotating screw part during the process of manufacturing silicon-based cathode materials, and multiple baffles are formed on the outer surface of screw blades formed on the rotation axis of the screw part, thereby moving the powder uniformly and preventing the powder from adhering to the screw blades.
[0037] In addition to the effects described above, the specific effects of the present invention are described together with the specific details for implementing the invention below. Brief explanation of the drawing
[0038] FIG. 1 is a perspective view showing an example of the configuration of a reactor capable of continuous processing according to the present invention. Figure 2 is a diagram showing a schematic diagram of the configuration of the reactor of Figure 1. FIG. 3 is a perspective view showing the configuration of a screw part according to the present invention. FIG. 4 is a perspective view showing baffles according to the present invention. FIG. 5 is a front view showing a screw part with one baffle installed according to the present invention. FIG. 6 is a front view showing a screw part with another baffle installed according to the present invention. FIG. 7 is a perspective view showing another example of the configuration of a reactor capable of continuous processing according to the present invention. Figure 8 is a diagram showing a schematic diagram of the configuration of the reactor of Figure 7. FIG. 9 is a diagram showing the process flow in a silicon-based cathode material manufacturing facility including a reactor capable of continuous processing according to the present invention. Specific details for implementing the invention
[0039] Hereinafter, embodiments of the present invention are described in detail with reference to the drawings so that those skilled in the art can easily implement the present invention.
[0040] The present invention may be implemented in various different forms and is not limited to the embodiments described herein.
[0041] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.
[0042] In the following description, the statement that any configuration is provided or arranged on the "upper (or lower) surface" or the "upper (or lower) surface" of the description means that any configuration is provided or arranged in contact with the upper (or lower) surface of the description.
[0043] Furthermore, it is not limited to not including any other configuration between the above description and any configuration provided or placed on (or under) the description.
[0044] The following describes a reactor capable of continuous processing according to the present invention and a silicon-based cathode material manufacturing facility including the same, with reference to the attached drawings.
[0045] First, the reactor capable of continuous processing according to the present invention will be described.
[0046] FIG. 1 is a perspective view showing an example of the configuration of a reactor capable of continuous processing according to the present invention. FIG. 2 is a diagram showing a schematic diagram of the configuration of the reactor of FIG. 1. FIG. 3 is a perspective view showing the configuration of a screw part according to the present invention.
[0047] Referring to FIGS. 1 to 3, a reactor capable of continuous processing according to the present invention includes a reactor body part (100), a reaction gas supply part (200), a powder supply part (300), a screw part (400), a rotating part (500), and a discharge part (600).
[0048] The above reactor body (100) may be formed in a tubular shape in which a reaction space is formed inside. The above reactor body (100) may be exposed to a heating temperature set from the outside through a separate heating device. The reactor body (100) according to the present invention may be arranged along a horizontal direction.
[0049] The reaction gas supply unit (200) is connected to one end of the reactor body (100) to supply the reaction gas to the reaction space. The reaction gas supply unit (200) has a reaction gas supply pipe (210) and a reaction gas supply unit (220). The reaction gas supply pipe (210) is connected to one end of the reactor body (100). The reaction gas supply unit (220) supplies the reaction gas through the reaction gas supply pipe (210).
[0050] The above powder supply unit (300) is formed as a powder supply pipe. The powder supply pipe is connected at a certain position on the outer circumference of one end of the reactor body (100) to supply powder supplied from the outside into the reaction space.
[0051] The screw part (400) according to the present invention is rotatably supported at both ends in a reaction space and rotated by power provided from the outside, so that the reaction gas supplied to the reaction space and the powder can be transported while continuously stirring along the axial direction from one side to the other side of the reaction space to produce a reaction product.
[0052] The screw portion (400) has a rotating shaft (410) with both ends rotatably supported at the center of both sides of the reaction space, and screw blades (420) formed along the length direction of the rotating shaft (410) in a spiral shape or screw shape.
[0053] The spacing between the screw blades (420) may vary depending on the process.
[0054] The rotating part (500) according to the present invention includes a rotating motor. The rotating motor is connected to one end of the rotating shaft (410) in an axial manner, and can rotate the rotating shaft (410) to achieve a rotational speed set by the control of the control unit (700).
[0055] FIG. 4 is a perspective view showing baffles according to the present invention. FIG. 5 is a front view showing a screw part with one baffle installed according to the present invention. FIG. 6 is a front view showing a screw part with another baffle installed according to the present invention.
[0056] Referring to FIGS. 4 to 6, a baffle (430) of a certain shape is formed protruding from the outer surface of the screw blades (420) according to the present invention, and can be installed in one or multiple units.
[0057] A baffle (430) according to the present invention may be formed on at least one side of the screw blades (410). For example, the baffle (430) may be formed on either the front or rear side of each screw blade (410). Preferably, the baffle (430) may be formed on both the front and rear sides of each screw blade (410).
[0058] The above baffles (430) may be formed as protrusions in the shape of a crescent, square, rectangular, and polygonal. Additionally, the baffles (430) may be formed integrally on the outer surface of each screw blade (420). The installation position of the baffles (430) may be installed so as to be in contact with the tip of the screw blade (420).
[0059] In addition, the above baffles (430) may be installed on the outer surface of each screw blade (420) at one or more different locations and facing different directions.
[0060] And the discharge section (600) according to the present invention is formed as a discharge pipe. The discharge pipe is formed at the lower end of the other end of the reactor body section (100) and can discharge the transported reaction material.
[0061] In addition, ultrasonic generating devices (800) may be installed at multiple locations around the perimeter of the reactor body (100).
[0062] The above ultrasonic generating device (800) can transmit ultrasonic waves of a level set according to the control of the control unit (700) into the interior of the reactor body (100) through the circumference of the reactor body (100) using ultrasonic generating modules (810).
[0063] In addition, a waste gas discharge section (150) for discharging waste gas remaining in the reaction space to the outside may be connected to the perimeter of the other end of the main body (100) of the reactor. The waste gas discharge section (150) may be formed as a waste gas discharge pipe.
[0064] The reactor according to the present invention as described above can uniformly stir powder with a very small particle size (<10㎛) and a high specific surface area (>900 m² / g) used in the cathode material manufacturing process while continuously moving it. This can be achieved through the rotational drive of the screw part (400) described above.
[0065] In particular, the reactor according to the present invention is characterized by having a screw section (400) having a rotating screw blade (420) and baffles (430) that come into contact with the powder being conveyed while being stirred are formed on the screw blades (420).
[0066] That is, at least one baffle (430) of a certain shape is formed on the outer surface of each screw blade (420) at the part that comes into contact with the powder, so that the powder is uniformly stirred while the powder is moved by the rotating screw part (400), thereby inducing a uniform reaction between the reaction gas and the powder.
[0067] Meanwhile, the reaction time in the reaction space of the reactor according to the present invention can be variably set in the control unit (700) by the pitch spacing of the rotating screw blade (420) and the number of rotations of the rotation axis (410) of the screw part (400).
[0068] And the flow of powder in the reaction space of the reactor can proceed in a horizontal direction. Accordingly, the powder may be deposited on the lower wall of the reaction space and form a layer, but in the present invention, the problem of powder deposition can be solved by installing ultrasonic generating devices (800) at multiple locations around the outer circumference of the bottom of the reactor and continuously transmitting ultrasonic waves through the bottom of the reactor.
[0069] FIG. 7 is a perspective view showing another example of the configuration of a reactor capable of continuous processing according to the present invention. FIG. 8 is a diagram showing a schematic diagram of the configuration of the reactor of FIG. 7.
[0070] FIGS. 7 and FIGS. 8 show other examples of a reactor according to the present invention.
[0071] The above reactor may be substantially identical to the configuration of the reactor described with reference to FIGS. 1 to 6. However, a plurality of auxiliary gas supply units (180) for supplying auxiliary gas to the reaction space may be formed at intervals at multiple locations of the reactor body (100).
[0072] The above plurality of auxiliary gas supply units (180) can be connected to the reaction gas supply unit (200) through an auxiliary gas supply path.
[0073] Here, the auxiliary gas supply units (180) may be injectors that supply reaction gas supplied through the auxiliary gas supply channel (181) by injecting it to different locations in the reaction space of the reactor.
[0074] In addition, the auxiliary gas supply units (180) are formed along the circumference of the reactor body (100), may be formed parallel to each other along the longitudinal direction of the reactor body (100), or may be formed at different locations along a path forming a vortex shape.
[0075] Through this, the reaction gas can be simultaneously supplied to one end of the reactor and multiple locations along the movement path of the powder, thereby enabling the reaction between the reaction gas and the powder to occur more efficiently.
[0076] FIG. 9 is a diagram showing the process flow in a silicon-based cathode material manufacturing facility including a reactor capable of continuous processing according to the present invention.
[0077] Referring to FIG. 9, the silicon-based cathode material manufacturing facility includes a storage tank (10), a first process unit (1), a second process unit (2), and a third process unit (3).
[0078] The above storage tank (10) stores spherical carbon structures to be processed.
[0079] The above storage tank (10) includes a device for controlling the amount of carbon structure to be loaded into the first reactor (101) of the first process unit (1) in a fixed volume or weight, and may include an agitator that can suppress the formation of a bridge during loading.
[0080] The first, second, and third reactors (101, 102, 103) described below may utilize the reactor according to the present invention.
[0081] First government (1)
[0082] The first process unit (1) according to the present invention may include a first reactor (101). The first reactor (101) is a steam-activated reactor.
[0083] The first reactor (101) is configured to increase the specific surface area of the loaded spherical carbon structure to 300 to 2000 m² / g. The first reactor (101) is operated at less than 1200°C, and a set amount of steam is continuously introduced into the reaction space of the first reactor (101).
[0084] During this process, spherical carbon structures react with steam to increase their specific surface area, forming "porous carbon structures." After the reaction, gases (such as CO2) are discharged through the exhaust gas outlet, and the porous carbon structures are discharged downward through the outlet by gravity.
[0085] Second Republic (2)
[0086] The second process unit (2) according to the present invention may include a second reactor (102). The second reactor (102) is a Si CVD (Chemical vapor deposition).
[0087] The above second reactor (102) allows Si to be deposited / impregnated into a porous carbon structure.
[0088] Here, the operating temperature is 300 to 700°C, and the reaction gas (silane, hydrogen, inert gas) can be introduced sequentially or simultaneously depending on the purpose. A Si / C composite is manufactured through this reaction.
[0089] At this time, auxiliary gas supply units (180) can be introduced alternately or additionally into the reaction space of the second reactor (102). Through this, the concentration of gas can be varied according to each location in the reaction space of the second reactor (102), and thus the single / multiple layer can be controlled.
[0090] Third Republic (3)
[0091] The third process unit (3) according to the present invention may include a third reactor (103). The third reactor (103) is a Carbon CVD.
[0092] The above third reactor (103) can form a passivation layer with carbon to block oxidation / side reactions of the Si / C composite.
[0093] Here, the third reactor (103) is operated at 300 to 600°C, and the reaction gas (gas containing a carbon source, hydrogen, inert gas) can be introduced sequentially or simultaneously to meet the set purpose.
[0094] In the present invention, by applying a reactor using a screw section to the first, second, and third process sections as described above, three stages of post-processing can be carried out continuously, thereby improving mass production capabilities and eliminating unnecessary movement between each process to differentiate from conventional batch post-processing methods, which has the advantage of minimizing material loss.
[0095] In addition, the present invention has the advantage of improving post-processing uniformity because the movement position of the powder or material can be periodically changed through baffles formed on the outer surface of each screw blade.
[0096] In addition, by generating ultrasound at multiple locations on the bottom of each of the first, second, and third reactors, the problem of powder or material adhering to and being lost on the bottom of the reaction space of the reactor can be solved.
[0097] The present invention is not limited to the specific preferred embodiments described above, and anyone with ordinary knowledge in the art to which the invention pertains can make various modifications without departing from the essence of the invention as claimed in the claims, and such modifications will be within the scope of the claims. Explanation of the symbols
[0098] 100: Reactor body 150 : Exhaust gas discharge section 180: Auxiliary gas supply unit 181 : Auxiliary gas supply route 200: Reaction gas supply unit 210: Reaction gas supply pipe 220 : Reaction gas supply unit 300 : Powder supply unit 400: Screw part 410 : Rotation axis 420: Screw blade 500 : Rotating part 600 : Discharge part 700 : Control unit 800 : Ultrasonic generator 810: Ultrasonic generating module
Claims
Claim 1 A reactor body portion that follows a horizontal direction, has a reaction space formed inside, and is exposed to a heating temperature set from the outside; a reaction gas supply portion that supplies one or more reaction gases to the reaction space through one end of the reactor body portion; a powder supply portion that is connected to the circumference of the reactor body portion and supplies powder to the reaction space of the reactor body portion; a screw portion that is rotatably supported at both ends in the reaction space and rotates by power provided from the outside to continuously stir the reaction gas supplied to the reaction space and the powder along the axial direction from one side to the other of the reaction space to generate a reaction product while conveying it; a rotating portion that rotates the screw portion; and a discharge portion formed at the lower end of the other end of the reactor body portion and discharges the conveyed reaction product, wherein the screw portion includes a rotating shaft and screw blades formed in a spiral shape around the rotating shaft, and one or more baffles are formed on the outer surface of the screw blades in a protruding shape, and the baffles are formed on at least one of the front or rear surface of the screw blades, and at least one of the baffles is the A reactor capable of continuous processing, characterized in that it is installed to contact the tip of a screw blade, and the baffles are positioned at different locations on the outer surface of the screw blade and positioned to face different directions. Claim 2 A reactor capable of continuous processing according to claim 1, wherein a plurality of auxiliary gas supply units for supplying auxiliary gas to the reaction space are formed at intervals at a plurality of locations of the main body of the reactor, and the plurality of auxiliary gas supply units are connected to the reaction gas supply unit through an auxiliary gas supply channel. Claim 3 A reactor capable of continuous processing, wherein, in claim 1, the rotating part comprises a rotating motor connected to the rotating shaft in an axial manner and rotating the rotating shaft to achieve a set rotational speed according to the control of the control unit. Claim 4 A reactor capable of continuous processing, characterized in that, in claim 1, the baffle is formed on both the front and rear surfaces of the screw blade. Claim 5 A reactor capable of continuous processing, wherein, in claim 4, the baffle has a shape among a crescent shape, a square shape, a rectangular shape, or a polygonal shape. Claim 6 A reactor capable of continuous processing, wherein, in claim 1, an ultrasonic generating device is installed at multiple locations around the perimeter of the reactor body, and the ultrasonic generating device transmits an ultrasonic level set according to the control of a control unit into the interior of the reactor body through the perimeter of the reactor body. Claim 7 A reactor capable of continuous processing, characterized in that, in claim 1, a waste gas discharge part for discharging waste gas remaining in the reaction space to the outside is connected to the perimeter of the other end of the main body of the reactor. Claim 8 A silicon-based cathode material manufacturing facility characterized by including a structure in which a plurality of reactors capable of continuous processing according to any one of claims 1 to 7 are sequentially connected.