Electronic device having resistance change property

Abstract

An electronic device according to one embodiment of the present disclosure comprises a substrate, a base electrode layer disposed on top of the substrate, first and second operating electrode layers disposed spaced apart from each other on top of the base electrode layer and receiving or releasing hydrogen, a channel layer disposed between the first and second operating electrode layers on top of the base electrode layer, a proton conductive layer disposed on the first and second electrode layers and the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a control electrode layer disposed on the hydrogen source layer.

Description

Technology Field

[0001] The present disclosure generally relates to an electronic device, and more specifically to an electronic device having a resistance change characteristic. Background Technology

[0002] Recently, resistive memory devices that store reversibly changing electrical resistance as signal information have emerged. Depending on the factors causing the resistance change in the resistance change layer, the above resistive memory devices can be classified into resistance change RAM, phase change RAM, magnetic change RAM, etc.

[0003] Meanwhile, various studies are being conducted to improve the performance of the aforementioned resistance memory device. Specifically, various studies are being conducted on methods to increase the number of resistance states that can be implemented in the resistance change layer, increase the size ratio between multiple implemented resistance states, increase the linearity and symmetry between multiple implemented resistance states, or increase the driving speed of the resistance memory device. The problem to be solved

[0004] One embodiment of the present disclosure provides an electronic device in which electrical resistance changes according to the interface characteristics between the channel layer and the operating electrode layer. means of solving the problem

[0005] An electronic device according to one embodiment of the present disclosure comprises a substrate, a base electrode layer disposed on top of the substrate, first and second operating electrode layers disposed spaced apart from each other on top of the base electrode layer and receiving or releasing hydrogen, a channel layer disposed between the first and second operating electrode layers on top of the base electrode layer, a proton conductive layer disposed on the first and second electrode layers and the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a control electrode layer disposed on the hydrogen source layer.

[0006] An electronic device according to one embodiment of the present disclosure comprises a substrate, first and second operating electrode layers spaced apart from each other on the upper surface of the substrate and receiving or releasing hydrogen, a channel layer disposed between the first and second operating electrode layers on the upper surface of the substrate, a proton conductive layer disposed on the first and second electrode layers and the channel layer, and a control electrode layer disposed on the proton conductive layer. Effects of the invention

[0007] In an electronic device according to one embodiment of the present disclosure, signal information stored in the electronic device may change depending on whether the operating electrode layer accepts or releases hydrogen. At this time, since the mass of the hydrogen is small, the rate at which the hydrogen is accepted by the operating electrode layer or emptied from the operating electrode layer may be fast. Furthermore, by utilizing the property that the characteristics of the interfacial energy barrier between the operating electrode layer and the channel layer change depending on whether hydrogen is accepted or released, a sufficiently high on / off ratio can be obtained among multiple signal information. Additionally, the linearity among multiple signal information can be improved by having an electrical resistance state that changes in proportion to the concentration of the accepted hydrogen. Brief explanation of the drawing

[0008] FIG. 1 is a cross-sectional view schematically illustrating an electronic device according to one embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the electronic device of FIG. 1 taken along I-I'. FIGS. 3 and 4 are schematic diagrams illustrating an interface energy barrier of a semiconductor device according to one embodiment of the present disclosure. FIGS. 5 and 6 are schematic diagrams illustrating the recording operation of an electronic device according to one embodiment of the present disclosure. FIG. 7 is a diagram schematically illustrating the reading operation of an electronic device according to one embodiment of the present disclosure. FIG. 8 is a schematic diagram illustrating an electronic device according to another embodiment of the present disclosure. FIG. 9 is a diagram schematically illustrating the recording operation of an electronic device according to another embodiment of the present disclosure. FIG. 10 is a diagram schematically illustrating the reading operation of an electronic device according to another embodiment of the present disclosure. FIG. 11 is a schematic drawing illustrating an electronic device according to another embodiment of the present disclosure. Specific details for implementing the invention

[0009] Hereinafter, embodiments of the present application will be described in more detail with reference to the attached drawings. In the drawings, the dimensions, such as the width or thickness of the components, have been slightly enlarged to clearly represent the components of each device. The drawings are described from the perspective of an observer, and when one element is mentioned as being positioned above another element, this implies both that the one element is positioned directly above the other element and that an additional element may be interposed between them. In multiple drawings, the same reference numerals refer to substantially identical elements.

[0010] Furthermore, singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and terms such as 'include' or 'have' are intended to specify the existence of the described features, numbers, steps, actions, components, parts, or combinations thereof, and should not be understood as precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0011] FIG. 1 is a cross-sectional view schematically showing an electronic device according to one embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the electronic device of FIG. 1 taken along I-I'. FIG. 3 and FIG. 4 are diagrams schematically showing an interfacial energy barrier of a semiconductor device according to one embodiment of the present disclosure.

[0012] Referring to FIG. 1, the electronic device (1) may include a substrate (110), a base electrode layer (120), first and second operating electrode layers (140, 160), a channel layer (150), a hydrogen conductive layer (170), a hydrogen source layer (180), and a control electrode layer (190). Additionally, the electronic device (1) may further include a separation insulating layer (130) disposed between the first and second operating electrode layers (140, 160) and the channel layer (150) and the base electrode layer (120).

[0013] In one embodiment, the substrate (110) may include a semiconductor material. As an example, the substrate (110) may be a silicon (Si) substrate, a gallium arsenide (GaAs) substrate, an indium phosphide (InP) substrate, a germanium (Ge) substrate, or a silicon germanium (SiGe) substrate. In another embodiment, the substrate (110) may include an insulating material. As an example, the substrate (110) may include a ceramic material or a polymer material. The ceramic material may be, as an example, silicon oxide, aluminum oxide, etc. The polymer material may be, as an example, polyimide, polyethylene naphthalate (PEN), polycarbonate, etc.

[0014] Referring to FIG. 1, a base electrode layer (120) may be disposed on a substrate (110). The base electrode layer (120) may include a conductive material. The conductive material may include, as an example, a doped semiconductor, a metal, a conductive metal nitride, a conductive metal oxide, a conductive metal silicide, a conductive metal carbide, or a combination of two or more of these. The conductive material may include, as an example, silicon, tungsten, titanium, copper, aluminum, ruthenium, platinum, iridium, iridium oxide, tungsten nitride, titanium nitride, tantalum nitride, tungsten carbide, titanium carbide, tungsten silicide, titanium silicide, tantalum silicide, ruthenium oxide, or a combination of two or more of these, doped with an n-type or p-type dopant.

[0015] Referring to FIG. 1, a separating insulating layer (130) may be disposed on a base electrode layer (120). The separating insulating layer (130) may electrically insulate each of the first and second operating electrode layers (140, 160) and the channel layer (150) from the base electrode layer (120). The separating insulating layer (130) may act as an electrical resistor when a voltage is applied between the base electrode layer (120) and the control electrode layer (190). The separating insulating layer (130) may include an insulating material. The insulating material may include, as an example, an oxide, a nitride, an oxynitride, or a combination thereof.

[0016] First and second operating electrode layers (140, 160) may be spaced apart from each other on a separated insulating layer (130). Each of the first and second operating electrode layers (140, 160) may receive or release hydrogen. In this specification, the meaning that hydrogen is received in the first and second operating electrode layers (140, 160) may mean that the hydrogen remains in the first and second operating current layers (140, 160) even after the external stimulus is removed, after the hydrogen is introduced into the first and second operating electrode layers (140, 160) by an external stimulus. Accordingly, hydrogen introduced into the first and second operating electrode layers (140, 160), respectively, can maintain a predetermined concentration within the first and second operating electrode layers (140, 160) unless a new stimulus is generated from an external energy source.

[0017] Hydrogen contained in the first and second operating electrode layers (140, 160) may have an atomic or diatomic form. The reception or release of said hydrogen may be controlled by a voltage applied between the control electrode layer (190) and the base electrode layer (120), as described below.

[0018] According to one aspect of the present disclosure, the hydrogen may be accommodated in the first and second operating electrode layers (140, 160) by being incorporated into the interstitial sites of the crystal lattice constituting the first and second operating electrode layers (140, 160). Additionally, the hydrogen may be released from the first and second operating electrode layers (140, 160) by escaping from the first and interstitial sites of the crystal lattice.

[0019] According to another aspect of the present disclosure, the received hydrogen may form a metal hydride by bonding with the first and second working metal layers (140, 160). Additionally, the metal hydride may be converted into a metal by breaking the bond with the hydrogen and releasing the hydrogen. Accordingly, each of the first and second working metal layers (140, 160) may include a metal capable of forming the metal hydride. The metal capable of forming the metal hydride may, as an example, include palladium (Pd) or a palladium (Pd)-based bimetallic compound. The palladium-based bimetallic compound is, as an example, represented by the chemical formula Pd-M, where M may include platinum (Pt), ruthenium (Ru), nickel (Ni), or cobalt (Co). In one embodiment, the first and second working electrode layers (140, 160) may be made of the same material. Alternatively, the first and second operating electrode layers (140, 160) may be made of different materials.

[0020] Referring again to FIG. 1, a channel layer (150) may be disposed between the first and second operating electrode layers (140, 160). The first and second operating electrode layers (140, 160) and the channel layer (150) may be disposed on the same plane. As an example, the first and second operating electrode layers (140, 160) and the channel layer (150) may be disposed on a plane (130S) substantially parallel to the surface (110S) of the substrate (110).

[0021] The channel layer (150) may include carbon nanotubes (151). The carbon nanotubes (151) may have electrical conductivity. In one embodiment, the channel layer (150) may have single-walled carbon nanotubes (151).

[0022] Referring to FIG. 2, carbon nanotubes (151) can be arranged within a channel layer (150). Within the channel layer (150), carbon nanotubes (151) can be arranged so as not to come into contact with each other. That is, a single carbon nanotube (151) can be arranged to directly connect the first working electrode layer (140) and the second working electrode layer (160) without contact with other carbon nanotubes. Accordingly, contact resistance caused by contact of the carbon nanotubes (151) can be prevented.

[0023] When a voltage is applied between the first and second operating electrode layers (140, 160), a conductive carrier can conduct through a carbon nanotube (151). The conductive carrier may, for example, be a hole having a positive charge. The single carbon nanotube (151) may have a length less than the mean free path of the conductive carrier. Accordingly, the conductive carrier can conduct through the channel layer (150) substantially without collision with one another. By arranging the carbon nanotube (151) described above, the conduction speed of the conductive carrier can be increased. The conduction method of the conductive carrier may include, for example, ballistic transport or quasi-ballistic transport.

[0024] Referring again to FIG. 1, the work function of each of the first and second working electrode layers (140, 160) may decrease when receiving the hydrogen. Conversely, the work function of each of the first and second working electrode layers (140, 160) may increase when releasing the hydrogen. In contrast, the channel layer (150) may receive the hydrogen or release the hydrogen, but the reception and release of the hydrogen may not substantially change the work function of the channel layer (150).

[0025] FIG. 3 schematically illustrates the energy barriers of the interfaces formed by the first and second operating electrode layers (140, 160) and the channel layer (150) when hydrogen is not contained in the first and second operating electrode layers (140, 160) and the channel layer (150), or when hydrogen is released from the first and second operating electrode layers (140, 160) and the channel layer (150). The Fermi energy levels (Ef-140, Ef-150) of the first and second operating electrode layers (140, 160), and the Fermi energy level (Ef-150), valence band energy level (Ev-150), and conduction band energy level (Ec-150) of the channel layer (150) are shown.

[0026] Referring to FIG. 3, the first interface (IL1) between the first operating electrode layer (140) and the channel layer (150), and the second interface (IL2) between the second operating electrode layer (160) and the channel layer (150) can each form an ohmic contact. That is, the work functions of the first operating electrode layer (140) and the channel layer (150) may be substantially the same to form an ohmic contact, or the difference in work functions between the first operating electrode layer (140) and the channel layer (150) may be sufficiently small to form an ohmic contact. Similarly, the work functions of the second operating electrode layer (160) and the channel layer (150) may be substantially the same to form an ohmic contact, or the difference in work functions between the second operating electrode layer (160) and the channel layer (150) may be sufficiently small to form an ohmic contact.

[0027] The state in which hydrogen is not received or hydrogen is released as illustrated in FIG. 3 may mean an initial state in which hydrogen is not artificially provided to the first and second operating electrode layers (140, 160) and the channel layer (150), i.e., a state immediately after manufacturing the semiconductor device (1), or a state in which the second recording operation described later in relation to FIG. 6 has been performed.

[0028] FIG. 4 schematically illustrates the energy barriers of the interfaces formed by the first and second operating electrode layers (140, 160) and the channel layer (150) when hydrogen is contained in the first and second operating electrode layers (140, 160) and the channel layer (150). When hydrogen is contained, the work function of the first and second operating electrode layers (140, 160) may be reduced. The amount of reduction in the work function may be proportional to the capacity of the hydrogen. The state in which hydrogen is contained in FIG. 4 may refer to the state in which the first recording operation described later in relation to FIG. 5 is performed.

[0029] As an example embodiment, when the first and second working electrode layers (140) each comprise palladium (Pd) and the channel layer (150) comprises carbon nanotubes, in the hydrogen-free state of FIG. 3, the palladium may have a work function of about 5.1 eV and the carbon nanotubes may have a work function of about 4.8 to 5.0 eV. In the hydrogen-accepted state of FIG. 4, the palladium may be palladium hydride (PdHx, 0 <x<1)로 변환될 때, 상기 팔라듐수소화물의 일함수는 약 3.2 eV까지 감소할 수 있다. 이에 따라, 도 4에서, 제1 계면(IL1) 및 제2 계면(IL2)에서 에너지 밴드의 휨에 의하여, 상기 전도성 캐리어(즉, 양의 전하를 가지는 상기 홀)에 대한 에너지 장벽이 각각 발생할 수 있다. 상기 팔라듐수소화물의 일함수 감소 정도에 비례하여, 상기 에너지 장벽의 크기가 각각 증가할 수 있다. 그 결과, 상기 수소의 수용에 따라, 상기 제1 계면의 전기적 접합 및 상기 제2 계면에서의 전기적 접합은 상기 전도성 캐리어(즉, 양의 전하를 가지는 홀)에 대해 각각 쇼트키 접합(schottky contact)으로 변환될 수 있다.

[0030] Subsequently, when the hydrogen is released from the first and second operating electrode layers (140) and the channel layer (150), as shown in FIG. 3, the electrical contacts at the first interface and the second interface can be converted into ohmic contacts with respect to the conductive carrier, respectively.

[0031] Referring to FIG. 1, a hydrogen ion conductive layer (170) may be disposed on the first and second operating electrode layers (140, 160) and the channel layer (150). The hydrogen ion conductive layer (170) may include a solid electrolyte capable of conducting hydrogen in the form of cations (protons). The hydrogen ion conductive layer (170) may exchange hydrogen ions with the first and second operating electrode layers (140, 160) and the channel layer (150). The hydrogen ions may be converted into atomic or diatomic entities within the first and second operating electrode layers (140, 160) and the channel layer (150).

[0032] The hydrogen ion conductive layer (170) may include a proton exchange polymer, a metal-organic framework (MOF), a covalent-organic framework (COF), sulfonated graphene, polymer-graphene composites, or a combination of two or more of these.

[0033] As an example, the hydrogen ion exchange polymer may include sulfonated tetrafluoroethylene-based fluoropolymer-copolymer, polystyrene-based membranes, sulfonated polyimide (SPI)-based membranes, polyphosphazene-based membranes, polybenzimidazole (PBI)-based membranes, etc. As another example, the MOF may be a sulfonated MOF or a polymer-MOF composite. At this time, the metal salt capable of forming the MOF may include salts having chemical formulas such as Zn4O(CO2)6, Zn3O(CO2)6, Cr3O(CO2)6, In3O(CO2)6, Ga3O(CO2)6, Cu2O(CO2)4, Zn2O(CO2)4, Fe2O(CO2)4, Mo2O(CO2)4, Cr2O(CO2)4, Co2O(CO2)4, Ru2O(CO2)4, etc. The organic ligand capable of forming the MOF may include oxalic acid, fumaric acid, H2BDC, H2BDC-Br, H2BDC-OH, H2BDC-NO2, H2BDC-NH2, H4DOT, H2BDC-(Me)2, H2BDC-(Cl)2, etc. As another example, the COF may be a sulfonated COF or a polymer-COF composite.

[0034] Referring to FIG. 1, a hydrogen source layer (180) may be disposed on a hydrogen ion conductive layer (170). The hydrogen source layer (180) may contain hydrogen internally. The hydrogen source layer (180) may serve to provide hydrogen to the hydrogen ion conductive layer (170). As an example, the hydrogen may have an atomic or diatomic form. The hydrogen source layer (180) may include, as an example, a metal hydride or a hydrogen-containing semiconductor. As an example, the metal hydride may be a hydride of palladium (Pd), magnesium (Mg), or yttrium (Y). As an example, the hydrogen-containing semiconductor may include silicon (Si) containing hydrogen or calcium arsenide (GaAs) containing hydrogen. When the above hydrogen-containing semiconductor is applied as a hydrogen source layer (180), the hydrogen source layer (180) can contain hydrogen by injecting hydrogen into the semiconductor material layer during the process of forming the semiconductor material layer. As an example of a method for injecting hydrogen, a diffusion method or an ion implantation method may be applied.

[0035] Referring to FIG. 1, a control electrode layer (190) may be disposed on a hydrogen source layer (180). The control electrode layer (190) may include a conductive material. The conductive material may include, as an example, a doped semiconductor, a metal, a conductive metal oxide, a conductive metal nitride, a conductive metal silicide, a conductive metal carbide, or a combination of two or more of these. The conductive material may include, as an example, silicon, tungsten, titanium, copper, aluminum, ruthenium, platinum, iridium, iridium oxide, tungsten nitride, titanium nitride, tantalum nitride, tungsten carbide, titanium carbide, tungsten silicide, titanium silicide, tantalum silicide, ruthenium oxide, or a combination of two or more of these, doped with an n-type or p-type dopant.

[0036] By an operating voltage of a first polarity (e.g., positive polarity) applied between the control electrode layer (190) and the base electrode layer (120), the hydrogen in the hydrogen source layer (180) can move to the first and second operating electrode layers (140, 160) and the channel layer (150) via the hydrogen ion conductive layer (170), and then be received in the first and second operating electrode layers (140, 160) and the channel layer (150). Additionally, by an operating voltage of a second polarity (e.g., negative polarity) applied between the control electrode layer (190) and the base electrode layer (120), hydrogen can move to the hydrogen source layer (180) via the hydrogen ion conductive layer (170) after being released from the first and second operating electrode layers (140, 160) and the channel layer (150).

[0037] As the first and second operating electrode layers (140, 160) receive or release the hydrogen, the work function of the first and second operating electrode layers (140, 160) may change. On the other hand, despite the reception or release of the hydrogen, the work function of the channel layer (150) may not change substantially.

[0038] As described above, an electronic device according to one embodiment of the present disclosure may include first and second operating electrode layers spaced apart from each other and a channel layer disposed between the first and second operating electrode layers on the upper surface of a substrate. Additionally, the electronic device may include a hydrogen ion conductive layer that exchanges hydrogen with the first and second operating electrode layers and the channel layer, and a hydrogen source layer that provides hydrogen to the hydrogen ion conductive layer. Additionally, the electronic device may include a base electrode layer and a control electrode layer that electrically control the hydrogen exchange.

[0039] According to one embodiment of the present disclosure, the work function of the first and second operating electrode layers may change when the first and second operating electrode layers receive or release hydrogen. Accordingly, the electrical junction characteristics at the first interface formed by the first operating electrode layer and the channel layer, and the second interface formed by the second operating electrode layer and the channel layer, may change. Consequently, according to one embodiment of the present disclosure, the conductivity of a conductive carrier passing through the channel layer between the first and second operating electrode layers may change depending on whether the first and second operating electrode layers receive or release hydrogen. That is, by utilizing the characteristic that the junction characteristics of the first and second interfaces change depending on the reception or release of hydrogen, an electronic device for storing different signal information can be provided.

[0040] FIGS. 5 and 6 are schematic diagrams illustrating the recording operation of an electronic device according to one embodiment of the present disclosure. FIG. 7 is a schematic diagram illustrating the reading operation of an electronic device according to one embodiment of the present disclosure.

[0041] As an example of one embodiment, with reference to FIGS. 5, 6, and 7, an electronic device according to one embodiment of the present disclosure may operate as a memory device utilizing a change in electrical resistance of a junction interface. FIG. 5 may be a drawing illustrating a first recording operation for recording a high resistance state to the electronic device. FIG. 6 may be a drawing illustrating a second recording operation for recording a low resistance state to the electronic device. FIG. 7 may be a drawing illustrating a reading operation for reading a resistance state recorded to the electronic device.

[0042] Referring to FIG. 5, a power supply (10) is connected to an electronic device (1). The first recording operation can proceed by applying a first recording voltage (V1) having a positive bias to a control electrode layer (190) while the base electrode layer (120) is grounded.

[0043] Referring to FIG. 5, hydrogen (H) inside the hydrogen source layer (180) can move to the first and second operating electrode layers (140, 160) and the channel layer (150) via the hydrogen ion conductive layer (170) by the positive bias applied to the gate electrode layer (190). In one embodiment, inside the hydrogen source layer (180), hydrogen (H) may have the form of an atomic or diatomic entity. After being converted into the form of hydrogen ions (protons) by the first recording voltage (V1), hydrogen (H) inside the hydrogen source layer (180) can pass through the hydrogen ion conductive layer (170) and be conducted to the first and second operating electrode layers (140, 160) and the channel layer (150). The hydrogen ions (protons) conducted to the first and second operating electrode layers (140, 160) and the channel layer (150) can be received within the first and second operating electrode layers (140, 160) and the channel layer (150) after being converted into hydrogen (H) within the first and second operating electrode layers (140, 160) and the channel layer (150).

[0044] At this time, the hydrogen (H) may be dissolved in the metal constituting the first and second operating electrode layers (140, 160). The hydrogen (H) may be placed at interstitial sites within the crystal lattice of the metal. In one embodiment, the hydrogen (H) may form a metallic bonding with the metal. In one embodiment, the hydrogen (H) may react with the metal to form a metal hydride.

[0045] In one embodiment, the first recording voltage can supply hydrogen (H) below the upper limit of hydrogen that can be dissolved by the metal of the first and second operating electrode layers (140, 160). In one embodiment, the concentration of hydrogen (H) flowing into the first and second operating electrode layers (140, 160) can be controlled by controlling the magnitude of the positive bias of the first recording voltage. In another embodiment, the concentration of hydrogen (H) flowing into the first and second operating electrode layers (140, 160) can be controlled by controlling the time during which the first recording voltage is applied. After the first recording voltage is removed, the first and second operating electrode layers (140, 160) can maintain the concentration of hydrogen (H) dissolved in the metal.

[0046] As described above in relation to FIG. 4, when hydrogen (H) is accommodated in the first and second working electrode layers (140, 160), the work function of the first and second working electrode layers (140, 160) may be reduced. The amount of reduction in the work function may be proportional to the capacity of the hydrogen. On the other hand, despite the accommodation of the hydrogen (H), the work function of the channel layer (150) may not substantially change. Accordingly, an energy barrier may be formed or the size of the energy barrier may be increased at the first interface (IL1) formed by the first working electrode layer (140) and the channel layer (150) and the second interface (IL2) formed by the second working electrode layer (160) and the channel layer (150) for the conductive carrier (i.e., a hole having a positive charge). That is, a Schottky junction for the conductive carrier may be formed at the first interface (IL1) and the second interface (IL2). In addition, the state of the Schottky junction at the first and second interfaces (IL1, IL2) can be stored non-volatilely within the semiconductor device (1). The Schottky junction state can increase the electrical resistance at the first and second interfaces (IL1, IL2) during a read operation described later in relation to FIG. 7. Accordingly, the Schottky junction state can function as first signal information in the semiconductor device (1).

[0047] In one embodiment, the concentration of hydrogen contained in the first and second operating electrode layers (140, 160) can be controlled by controlling at least one of the magnitude of the positive bias of the first recording voltage and the application time of the recording voltage. Then, after the removal of the first recording voltage, the first and second operating electrode layers (140, 160) can substantially maintain the different plurality of hydrogen concentrations. Accordingly, the first and second operating electrode layers (140, 160) and the channel layer (150) can non-volatilely store the magnitude of the energy barrier of the Schottky junction corresponding to the different plurality of hydrogen concentrations. Accordingly, the plurality of first signal information can be proportional to the magnitude of the energy barrier of the Schottky junction.

[0048] Referring to FIG. 6, the second recording operation can proceed as a process of applying a second recording voltage (V2) having a negative bias to the control electrode layer (190) while the base electrode layer (120) is grounded.

[0049] Referring to FIG. 6, the hydrogen (H) inside the first and second operating electrode layers (140) and the channel layer (150) can be emitted from the first and second operating electrode layers (140) and the channel layer (150) by the negative bias. The hydrogen (H) can move to the hydrogen source layer (180) via the hydrogen ion conductive layer (170).

[0050] In one embodiment, the hydrogen (H) inside the first and second operating electrode layers (140) and the channel layer (150) can be converted into hydrogen ions (protons) by the second recording voltage (V2) and then conducted through the hydrogen ion conduction layer (170) to the hydrogen source layer (180). The hydrogen ions (protons) conducted to the hydrogen source layer (180) can be converted into hydrogen (H) within the hydrogen source layer (180) and then received in the hydrogen source layer (180). Inside the hydrogen source layer (180), the hydrogen (H) can have the form of an atom or a diatomic entity.

[0051] When hydrogen (H) is emitted from the first and second working electrode layers (140, 160), the work function of the first and second working electrode layers (140, 160) may increase. The amount of increase in the work function may be proportional to the amount of hydrogen emitted. On the other hand, despite the emission of hydrogen (H), the work function of the channel layer (150) may not substantially change. Accordingly, as illustrated in FIG. 3, the energy barrier may be lowered at the first interface (IL1) formed by the first working electrode layer (140) and the channel layer (150) and the second interface (IL2) formed by the second working electrode layer (160) and the channel layer (150) for the conductive carrier (i.e., a positively charged hole). Accordingly, the ohmic junction for the conductive carrier may be formed at the first interface (IL1) and the second interface (IL2). In addition, the state of the ohmic junction at the first and second interfaces (IL1, IL2) can be stored non-volatilely within the semiconductor device (1). The ohmic junction state can reduce the electrical resistance at the first and second interfaces (IL1, IL2) during a read operation described later in relation to FIG. 7. Accordingly, the ohmic junction state can function as second signal information in the semiconductor device (1).

[0052] In one embodiment, after performing the second recording operation, the hydrogen concentration inside the first and second operating electrode layers (140) may reach a predetermined lower limit. Accordingly, the second recording operation may function as a reset operation to remove hydrogen introduced into the channel layer (140) through the first recording operation.

[0053] In another embodiment, when performing the second recording operation after the first recording operation, the second recording operation can be controlled to control the size of the energy barrier of the Schottky junction at the first and second interfaces (IL1, IL2) formed by the first recording operation. That is, by controlling the second recording operation, the degree to which the energy barrier of the Schottky junction is reduced can be adjusted. Accordingly, Schottky junctions having various energy barrier sizes can be formed at the first and second interfaces (IL1, IL2). Through this, the second recording operation can record a plurality of signal information independently of the first recording operation. The plurality of signal information can correspond to the Schottky junctions having various energy barrier sizes.

[0054] Referring to FIG. 7, a reading operation of the electronic device (1) can be performed. The power supply (10) can apply a reading voltage (V3) between the first operating electrode layer (140) and the second operating electrode layer (130) of the electronic device (1). The reading operation can proceed to a process of reading the current flowing through the channel layer (150) by the reading voltage (V3).

[0055] As described above, the electrical junction at the first and second interfaces (IL1, IL2) (shown in FIG. 3 and FIG. 4) may change depending on the hydrogen concentration contained in the first and second operating electrode layers (140, 160) and the channel layer (150). The electrical conductivity of the conductive carrier when the electrical junction is an ohmic junction may be greater than the electrical conductivity of the conductive carrier when the electrical junction is a Schottky junction. Additionally, for the conductive carrier, as the size of the energy barrier of the Schottky junction at the first and second interfaces (IL1, IL2) increases, the electrical conductivity of the conductive carrier conducting the channel layer (150) may be smaller. Accordingly, by measuring the electrical conductivity of the conductive carrier conducting the channel layer (150), signal information recorded in the semiconductor device (1) can be read.

[0056] FIG. 8 is a schematic diagram illustrating an electronic device according to another embodiment of the present disclosure. FIG. 9 is a schematic diagram illustrating a writing operation of an electronic device according to another embodiment of the present disclosure. FIG. 10 is a schematic diagram illustrating a reading operation of an electronic device according to another embodiment of the present disclosure.

[0057] Referring to FIG. 8, the electronic device (2) may omit the base electrode layer, the isolation insulating layer, and the hydrogen source layer compared to the electronic device (1) of FIG. 1. The electronic device (2) may include a substrate (210), first and second operating electrode layers (240, 260), a channel layer (250), a hydrogen ion conductive layer (270), and a control electrode layer (290).

[0058] The substrate (210) may be substantially the same as the substrate (110) of the semiconductor device (1) of FIG. 1. However, if the substrate (210) includes a semiconductor material, the electrical conductivity of the substrate (210) may be lower than the electrical conductivity of the channel layer (250).

[0059] The first and second operating electrode layers (240, 260) and the channel layer (250) may be disposed on a substrate (210). The material, structure, and electrical characteristics of the first and second operating electrode layers (240, 260) and the channel layer (250) may be substantially the same as the material, structure, and electrical characteristics of the first and second operating electrode layers (240, 260) and the channel layer (250) of the semiconductor device (1) of FIG. 1.

[0060] A hydrogen ion conductive layer (270) may be disposed on the first and second operating electrode layers (240, 260) and the channel layer (250). A control electrode layer (290) may be disposed on the hydrogen ion conductive layer (270). The material, structure, and electrical characteristics of the hydrogen ion conductive layer (270) and the control electrode layer (290) may be substantially the same as the material, structure, and electrical characteristics of the hydrogen ion conductive layer (170) and the control electrode layer (190) of the semiconductor device (1) of FIG. 1.

[0061] The hydrogen ion conductive layer (270) can perform the functions of both the hydrogen ion conductive layer (170) and the hydrogen source layer (180) of the electronic device (1) of FIG. 1. To this end, the hydrogen ion conductive layer (270) may contain sufficient hydrogen to function as the hydrogen source layer (180) in contrast to the hydrogen ion conductive layer (170) of FIG. 1. The hydrogen may be injected into the hydrogen ion conductive layer (270) when the hydrogen ion conductive layer (270) is formed on the first and second operating electrode layers (240, 260) and the channel layer (250). The method of injecting the hydrogen may be a diffusion method or an ion implantation method. The hydrogen may have the form of, for example, hydrogen ions (protons), atoms, or diatomic entities within the hydrogen ion conductive layer (270).

[0062] Referring to FIG. 9, the recording operation for the semiconductor device (2) may proceed by applying a recording voltage (Va) to the control electrode layer (290) while the first and second operating electrode layers (240, 260) are grounded. The recording voltage (Va) may have a positive bias or a negative bias. In some other embodiments, the recording voltage (Va) may be applied to the control electrode layer (290) while either of the first and second operating electrode layers (240, 260) is grounded. In this case, the amount of hydrogen received or released by the grounded operating electrode layer may be greater than that of the ungrounded operating electrode layer.

[0063] Referring to FIG. 10, a reading operation for a semiconductor device (2) can proceed by applying a reading voltage (Vb) between the first and second operating electrode layers (240, 260). Depending on the type of electrical junction formed at the interface between the first and second operating electrode layers (240, 260) and the channel layer (250), the conductivity of a conductive carrier conducting the channel layer (250) may change. By measuring the conductivity of the conductive carrier, signal information stored in the semiconductor device (2) can be read.

[0064] FIG. 11 is a schematic drawing illustrating an electronic device according to another embodiment of the present disclosure. Referring to FIG. 11, the electronic device (3) may further include an interlayer insulating layer (230) and a hydrogen source layer (280) in contrast to the electronic device (2) of FIG. 8.

[0065] Referring to FIG. 11, an interlayer insulating layer (230) may be disposed between the substrate (210), the first and second operating electrode layers (240, 260), and the channel layer (250). The interlayer insulating layer (230) may electrically insulate the substrate (210) from the first and second operating electrode layers (240, 260) and the channel layer (250).

[0066] The hydrogen source layer (280) may be disposed between the hydrogen ion conductive layer (270) and the control electrode layer (290). Accordingly, the configuration of the hydrogen ion conductive layer (270) and the hydrogen source layer (280) may be substantially the same as the configuration of the hydrogen ion conductive layer (170) and the hydrogen source layer (180) of the electronic device (1) of FIG. 1.

[0067] Although the foregoing has been described with reference to the drawings and embodiments, those skilled in the art will understand that various modifications and changes can be made to the embodiments disclosed in this application without departing from the technical spirit of the application as set forth in the following claims. Explanation of the symbols

[0069] 1, 2, 3: Electronic device, 110: Substrate, 120: Base electrode layer, 130: Separating insulation layer, 140: First operating electrode layer, 150: Channel layer, 160: Second operating electrode layer, 170: Hydrogen conductive layer, 180: Hydrogen source layer, 190: Control electrode layer.

Claims

Claim 1 An electronic device comprising: a substrate; a base electrode layer disposed on the upper portion of the substrate; first and second operating electrode layers disposed spaced apart from each other on the upper portion of the base electrode layer and receiving or releasing hydrogen; a channel layer disposed between the first and second operating electrode layers on the upper portion of the base electrode layer; a proton conductive layer disposed on the first and second electrode layers and the channel layer; a hydrogen source layer disposed on the proton conductive layer; and a control electrode layer disposed on the hydrogen source layer, wherein each of the first and second operating electrode layers comprises a metal having a work function that changes according to the reception or release of hydrogen, and the channel layer comprises a carbon nanotube having a work function that does not change according to the reception or release of hydrogen, and the carbon nanotube electrically connects the first operating electrode layer and the second operating electrode layer and contacts both the first and second operating electrode layers. Claim 2 An electronic device according to claim 1, wherein the electrical conductivity of a conductive carrier conducting the channel layer between the first and second operating electrode layers changes depending on whether the first and second operating electrode layers receive or release the hydrogen. Claim 3 An electronic device according to claim 1, wherein the first and second working electrode layers have a work function that decreases upon acceptance of hydrogen, and the channel layer has a work function that does not change upon acceptance of hydrogen. Claim 4 In claim 2, the electronic device wherein the conductive carrier is a hole having a positive charge. Claim 5 An electronic device according to claim 2, wherein when the first and second operating electrode layers accommodate hydrogen, the size of the energy barrier at the first interface formed by the first operating electrode layer and the channel layer and the size of the energy barrier at the second interface formed by the second operating electrode layer and the channel layer each increase with respect to the conductive carrier. Claim 6 An electronic device according to claim 5, wherein, upon acceptance of the hydrogen, the electrical contacts at the first interface and the second interface change from an ohmic contact to a Schottky contact with respect to the conductive carrier. Claim 7 An electronic device according to claim 1, wherein each of the first and second operating electrode layers comprises a metal forming a metal hydride. Claim 8 An electronic device according to claim 7, wherein the metal forming the metal hydride comprises palladium (Pd) or a palladium (Pd)-based bimetallic compound. Claim 9 In claim 1, the electronic device wherein the channel layer comprises carbon nanotubes. Claim 10 delete Claim 11 An electronic device according to claim 1, wherein the carbon nanotube has a length less than or equal to the mean free path of a hole as a conductive carrier. Claim 12 An electronic device according to claim 1, wherein the first and second operating electrode layers and the channel layer are disposed on the same plane. Claim 13 An electronic device according to claim 1, wherein the hydrogen ion conductive layer comprises at least one of a proton exchange polymer, a metal-organic framework, a covalent-organic framework, sulfonated graphene, and polymer-graphene composites. Claim 14 An electronic device according to claim 1, wherein the hydrogen source layer comprises a metal hydride or a hydrogen-containing semiconductor. Claim 15 An electronic device according to claim 1, further comprising a separating insulating layer disposed between the first and second operating electrode layers and the channel layer and the base electrode layer. Claim 16 An electronic device comprising: a substrate; first and second operating electrode layers spaced apart from each other on the upper surface of the substrate and receiving or releasing hydrogen; a channel layer disposed between the first and second operating electrode layers on the upper surface of the substrate; a proton conductive layer disposed on the first and second electrode layers and the channel layer; and a control electrode layer disposed on the proton conductive layer, wherein each of the first and second operating electrode layers comprises a metal having a work function that changes according to the receiving or releasing of hydrogen, and the channel layer comprises a carbon nanotube having a work function that does not change according to the receiving or releasing of hydrogen, and the carbon nanotube electrically connects the first operating electrode layer and the second operating electrode layer and contacts both the first and second operating electrode layers. Claim 17 An electronic device according to claim 16, wherein the electrical conductivity of a conductive carrier conducting the channel layer between the first and second operating electrode layers changes depending on whether the first and second operating electrode layers receive or release the hydrogen. Claim 18 In claim 17, the conductive carrier is a hole-in-electronic device having a positive charge. Claim 19 An electronic device according to claim 16, wherein, upon acceptance of the hydrogen, the work function of the first and second working electrode layers increases and the work function of the channel layer does not change. Claim 20 An electronic device according to claim 16, wherein, upon acceptance of the hydrogen, the electrical contact at the first interface formed by the first working electrode layer and the channel layer and the electrical contact at the second interface formed by the second working electrode layer and the channel layer change from an ohmic contact to a Schottky contact, respectively, with respect to a hole as a conductive carrier. Claim 21 An electronic device according to claim 16, wherein each of the first and second operating electrode layers comprises a metal forming a metal hydride. Claim 22 An electronic device according to claim 21, wherein the metal forming the metal hydride comprises palladium (Pd) or a palladium (Pd)-based bimetallic compound. Claim 23 In claim 16, the electronic device wherein the channel layer comprises carbon nanotubes. Claim 24 delete Claim 25 In claim 16, the carbon nanotube is an electronic device having a length less than or equal to the mean free path of a hole as a conductive carrier. Claim 26 An electronic device according to claim 16, wherein the hydrogen ion conductive layer comprises at least one of a proton exchange polymer, a metal-organic framework, a covalent-organic framework, sulfonated graphene, and polymer-graphene composites. Claim 27 In claim 16, the hydrogen ion conductive layer comprises hydrogen that is interchangeable with the first and second operating electrode layers in an electronic device. Claim 28 An electronic device comprising, in claim 16, a hydrogen source layer disposed between the hydrogen ion conductive layer and the control electrode layer.

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