Substrate treating apparatus

Abstract

The present invention relates to a substrate processing apparatus and comprises: a process chamber having an internal space provided therein; a susceptor positioned at a distance from the side of the process chamber to support a substrate in the internal space; a shower head supplying process gas from the upper side of the substrate supported on the susceptor; a pumping channel formed as a downward recess on the bottom surface of the process chamber in a ring shape continuous along the perimeter of the bottom surface of the process chamber and having a pumping hole formed to communicate with the internal space; and a discharge channel for discharging gas introduced into the pumping channel. As the pumping channel is formed on the bottom surface of the internal space of the process chamber, the process gas supplied from the shower head flows toward the substrate and then flows vertically through the gap between the susceptor and the side of the internal space, thereby maintaining a stable and constant gas flow around the substrate and enabling a uniform processing process to be performed on the entire surface of the substrate.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and method, and more specifically, to a substrate processing apparatus that enables a uniform processing process to be performed over the entire surface area of ​​a substrate by maintaining a uniform gas flow within a process chamber during the process of performing a substrate processing process within the process chamber using gas. Background Technology

[0002] Generally, Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment is used to deposit insulating films, protective films, oxide films, metal films, etc., on a substrate using chemical reactions of gases in a vacuum during display manufacturing or semiconductor manufacturing processes.

[0003] FIG. 1 is a cross-sectional view illustrating an example of a substrate processing device. As illustrated in FIG. 1, the substrate processing device (9) comprises a plurality of process chambers (11, 21) having an internal space (11c, 21c) sealed from the outside and maintained in a vacuum state during the deposition process, a susceptor (12, 22) installed vertically inside the process chambers (11, 21) on which a substrate (W) is placed, a shower head (13, 23) that supplies process gas including a source gas that serves as a deposition material inside the process chambers (11, 21), a gas supply unit (19, 29) that supplies process gas to the shower head (13, 23) (51), a pumping channel (14, 24) that discharges the gas supplied to the process chambers (11, 21) to the outside of the internal space (11c, 21c), and discharge channels (15, 25) each extending from the pumping channel (14, 24).

[0004] In the configuration illustrated in the drawing, since the process chambers (11, 21) are formed in two, a fixed body (30) is placed at the boundary of each process chamber (11, 21). Then, the exhaust channels (15, 25) for discharging gas from each process chamber (11, 21) merge at the lower side of the fixed body (30) to form a common exhaust channel (40).

[0005] A bellows is provided to block the outside air so that the internal space of the process chamber (11, 12) can be moved up and down while the susceptor (12, 22) is maintained in a vacuum state. Accordingly, with the substrate (W) mounted on the susceptor (12, 22), the inside of the process chamber (11, 21) is controlled to a vacuum state lower than atmospheric pressure, process gas is supplied into the inside of the process chamber (11, 21) through the shower head (13, 23), and plasma is generated inside the process chamber (11, 21) by applying continuous power from the RF power supply unit, thereby forming a film of a predetermined thickness on the surface of the substrate (W).

[0006] During the film formation process, which is one of the processing processes of a substrate, the process gas supplied from the shower head (13) flows downward (52) from the upper side of the substrate (W) to generate plasma on the upper side of the substrate, and is introduced (53) into the pumping channel (14, 24) which is maintained at a lower pressure state than the internal space (11c, 21c) by suction pressure through the pumping hole (24a) formed on the side of the process chamber (11), and is discharged to the outside by sequentially passing through the discharge channel (15, 25) and the common discharge channel (40) extended from the pumping channel (14, 24) (54, 55).

[0007] Here, the suction pressure applied to the pumping channels (14, 24) for discharging gas from the internal space of the process chamber (11, 21) to the outside is applied through the common discharge channel (40). Accordingly, as shown in the flow analysis results of the pumping channels (14, 24) illustrated in FIG. 3, normal flow occurs in the pumping channel (24) in the part (EE) connected to the discharge channel (15, 25) to which the suction pressure is applied, but a problem arises in which almost no flow occurs in the pumping channel (24) in the part (XX) far from the discharge channel (15, 25).

[0008] This phenomenon is also confirmed through the flow rate analysis results of the pumping channels (14, 24) shown in FIG. 4. That is, as shown in FIG. 4, the flow rate is sufficiently fast within the pumping channel (24) in the part (EE) connected to the discharge channel (15, 25) to which suction pressure is applied, but there is a problem in that almost no flow occurs within the pumping channel (24) in the part (XX) far from the discharge channel (15, 25). In other words, it was confirmed that the gas in the internal space of the process chamber (11, 21) cannot be smoothly sucked in in the pumping channel (24) in the part (XX) opposite to the discharge channel (15, 25).

[0009] Due to this phenomenon, a problem arises in which the thickness of the deposited film deposited on the surface of the substrate (W) becomes non-uniform. Therefore, there is an urgent need for a method to uniformly discharge the gas supplied to the internal space (11c, 21c) of the process chamber (11, 21) over the entire circumference.

[0010] Furthermore, as a vortex (88) of the process gas was generated on the lower side of the susceptor (12, 22) of the process chamber (11, 21), there was also a problem in that the efficiency of discharging the process gas supplied to the process chamber (11, 21) out of the chamber was reduced.

[0011] The aforementioned configuration and operation are not configurations known prior to the filing date of this application, and are described as a technology for comparison with the present invention. The problem to be solved

[0012] The present invention aims to solve the problems described above by using gas to induce the gas flow within the process chamber to be symmetrical with respect to the substrate during the substrate processing process, thereby enabling a uniform processing process across the entire surface of the substrate. means of solving the problem

[0013] To achieve the above-described purpose, the present invention provides a substrate processing apparatus characterized by comprising: a process chamber having an internal space provided therein; a susceptor positioned at a distance from the side of the process chamber to support a substrate in the internal space; a shower head supplying process gas from the upper side of the substrate supported on the susceptor; a pumping channel formed as a downward recess on the bottom surface of the process chamber in a ring shape continuous along the perimeter of the bottom surface of the process chamber and having a pumping hole formed therein communicating with the internal space; and a discharge channel for discharging gas introduced into the pumping channel.

[0014] This is so that, as the pumping channel is formed on the bottom surface of the internal space of the process chamber, the process gas supplied from the shower head flows toward the substrate and then flows vertically through the gap between the susceptor and the side of the internal space, thereby ensuring constant gas flow around the substrate.

[0015] In particular, the pumping hole is positioned at a location where the side of the internal space and the bottom surface of the internal space meet, so that suction pressure acts on the internal space at the location where the side of the internal space and the bottom surface of the internal space meet, and thus the process gas passing through the gap between the susceptor and the side of the internal space flows vertically along the side of the internal space, thereby allowing the gas flow around the substrate to be maintained more consistently.

[0016] Meanwhile, it further includes a buffer channel that communicates through a through hole in the bulkhead between the pumping channel and the bulkhead, and the discharge channel may be configured to communicate with the buffer channel to apply suction pressure and discharge gas introduced into the pumping channel through the buffer channel.

[0017] This is intended to ensure that the suction pressure applied to the pumping channel is maintained uniformly along the circumferential direction of the process chamber, as the gas is not discharged directly from the pumping channel to the discharge channel but passes through the buffer channel. Through this, the amount of gas sucked into the pumping channel around the substrate is maintained uniformly along the circumferential direction of the chamber, and since the amount of process gas sucked along the circumferential direction from the bottom surface of the process chamber becomes constant, the gas flow around the substrate mounted on the susceptor becomes symmetrical around the substrate during the substrate processing process, thereby enabling the substrate processing process to be performed uniformly across the entire surface of the substrate.

[0018] Here, the buffer channel may be arranged in a ring shape on the outside of the pumping channel with the side of the pumping channel serving as the partition, or may be arranged in a ring shape on the lower side of the pumping channel with the bottom surface of the pumping channel serving as the partition.

[0019] The pumping holes and through holes are spaced apart along the side perimeter of the process chamber. Accordingly, the pumping channels and buffing channels are not completely perforated, and are formed in a state where gas can flow through the through holes.

[0020] At this time, it is preferable that the through hole and the pumping hole be positioned at different locations along the side perimeter of the process chamber. Through this, the gas introduced into the pumping channel through the pumping hole is induced to flow inside the pumping channel and then enter the buffer channel rather than entering the buffer channel immediately, thereby maintaining a constant overall flow state of the pumping channel.

[0021] In addition, the sum of the open cross-sections of the through holes is formed to be larger than the sum of the open cross-sections of the pumping holes. Through this, suction pressure applied from the common discharge channel to the pumping channel can be smoothly applied, and gas in the process chamber can be smoothly discharged to the outside by sequentially passing through the pumping channel, the buffer channel, and the discharge channel.

[0022] Here, at least one of the through hole and the pumping hole may be formed with a tapered shape in which the cross-section gradually decreases toward the discharge channel. Through this, as the gas passes through the through hole and the pumping hole, the flow velocity gradually increases toward the direction in which the suction pressure is applied, thereby increasing the gas pumping effect according to the suction pressure.

[0023] Meanwhile, the present invention may be configured such that a ring-shaped through-hole is provided between the buffer channel and the discharge channel, but according to one embodiment of the present invention, a barrier wall is formed between the buffer channel and the discharge channel, and a plurality of discharge holes connecting the buffer channel and the discharge channel are formed through the barrier wall, thereby inducing an action of uniformly distributing pressure between the buffer channel and the discharge channel.

[0024] In addition, an Nth buffer channel may be disposed between the buffer channel and the discharge channel, so that gas introduced into the pumping channel passes sequentially through the buffer channel and the Nth buffer channel and is discharged through the discharge channel.

[0025] Meanwhile, it may be configured to further include a ceiling plate formed in a ring shape, having a pumping hole formed therein, and interposed between the pumping channel and the internal space to partition the pumping channel from the internal space. Through this, it becomes easier to install the pumping channel in the process chamber.

[0026] Here, the pumping channel and buffer channel can be formed using a ring-shaped channel member. That is, the ring-shaped channel member is provided with a ceiling plate arranged continuously with the side of the process chamber and a partition wall partitioning the pumping channel and the buffer channel, and is formed as a single ring-shaped body and inserted into a recessed portion formed around the side of the process chamber. Through this, the pumping channel and buffer channel can be formed more easily.

[0027] At this time, a barrier plate having a plurality of discharge holes formed between the buffer channel and the discharge channel may be additionally formed in the ring-shaped channel member.

[0028] One or more of the pumping channel and the buffer channel may be configured to form a gas passage with a constant cross-section along the perimeter of the internal space. By doing so, the amount of flow velocity fluctuation within the pumping channel and the buffer channel is minimized, thereby enabling a constant amount of gas to be discharged from the internal space of the process chamber into the pumping channel.

[0029] Meanwhile, the present invention with the above configuration may be a substrate processing device formed with a single process chamber, or a substrate processing device formed with two or more process chambers. That is, the substrate processing device according to the present invention may include a first process chamber unit (100) and a second process chamber unit (200). Here, the second process chamber unit (200) comprises: a second process chamber having a second internal space provided therein and arranged parallel to the process chamber; a second susceptor for mounting a second substrate in the second internal space; a second shower head for supplying process gas from the upper side of the second substrate mounted on the second susceptor; a second pumping channel formed as a downward recess on the bottom surface of the second process chamber in a ring shape continuous along the perimeter of the second process chamber and having a second pumping hole formed therein that communicates with the second internal space; and a second buffer channel communicating through a through hole of the second partition wall with the second pumping channel and the second partition wall in between. It may further include, and the second buffer channel may be configured to communicate with the discharge channel.

[0030] The terms 'gas' or 'process gas' as described in this specification and claims collectively refer to a source gas forming the main material of a film formed on the upper surface of a substrate, a reaction gas supplied to react with the source gas forming the main material of the film formed on the upper surface of the substrate, a carrier gas supplied together to supply a specific gas to the process chamber, and a modulation gas supplied during the modulation step in the process chamber, and are defined as a collective term for all various gases supplied to the process chamber.

[0031] The terms ‘circumferential direction’ and similar terms described in this specification and claims are defined as referring to the inner wall (110i, 210i) of the internal space of the process chamber as a ring-shaped closed cross-section direction. Effects of the invention

[0032] As described above, the present invention provides a pumping channel for discharging process gas supplied to the process chamber to the outside, formed on the bottom surface of the internal space of the process chamber, so that the process gas supplied from the shower head flows toward the substrate to perform the processing process, and the process gas that has performed the processing process passes through the gap between the susceptor and the side of the internal space and flows vertically along the side of the internal space, thereby obtaining the advantageous effect of maintaining constant gas flow around the substrate.

[0033] Above all, the present invention provides a buffer channel that communicates with the pumping channel through a through hole between the pumping channel and the exhaust channel for discharging gas supplied to the internal space of the process chamber, thereby obtaining the advantageous effect of evenly dispersing the suction pressure applied from the exhaust channel to the pumping channel through the buffer channel and maintaining it uniformly along the circumferential direction of the process chamber.

[0034] Through this, the present invention allows the gas supplied to the internal space of the process chamber to flow into the pumping channel while minimizing deviation in the circumferential direction due to the suction pressure acting uniformly along the circumferential direction of the pumping channel, and thus the gas supplied to the internal space of the process chamber is discharged at a constant flow rate along the circumferential direction, so that the gas flow field in the internal space of the process chamber is symmetrically distributed around the substrate, thereby obtaining the advantageous effect of forming a deposited film uniformly on the surface of the substrate. Brief explanation of the drawing

[0035] FIG. 1 is a cross-sectional view illustrating the configuration of a general substrate processing device, Figure 2 is an enlarged view of section 'A' of Figure 1. FIG. 3 is a drawing showing the flow analysis results of the pumping channel of the second process chamber (21) of FIG. 1. FIG. 4 is a drawing showing the flow rate analysis results of the pumping channel of the second process chamber (21) of FIG. 1. FIG. 5 is a cross-sectional view illustrating the configuration of a substrate processing device according to a first embodiment of the present invention. Fig. 6 is an enlarged view of section 'B' of Fig. 5. FIG. 7a is a cross-sectional view along the cutting line X1-X1 of FIG. 5, FIG. 7b is a cross-sectional view illustrating another embodiment of the present invention corresponding to the cross-section along the cutting line X1-X1 of FIG. 5. FIG. 8 is a cross-sectional view illustrating the configuration of a substrate processing device according to a second embodiment of the present invention. Fig. 9 is an enlarged view of section 'C' of Fig. 8. FIG. 10 is a diagram illustrating a configuration of a substrate processing device according to another embodiment of the present invention, corresponding to part 'B' of FIG. 5. Specific details for implementing the invention

[0036] Hereinafter, a substrate processing apparatus (1) according to the first embodiment of the present invention will be described in detail with reference to the attached drawings. However, in describing the present invention, specific descriptions of known functions or configurations will be omitted in order to clarify the gist of the present invention.

[0037] As illustrated in FIGS. 5 and 6, a substrate processing apparatus (1) according to a first embodiment of the present invention comprises a pair of process chambers (110, 210) having internal spaces (111, 211) isolated from the outside, a susceptor (120, 220) for mounting a substrate (W) in each internal space (111, 211), a shower head (130, 230) for supplying process gas (92) from above the substrate (W) mounted on the susceptor (120, 220), a pumping channel (P1, P2) through which gas flows in a ring shape formed as a downward indentation continuous to the bottom surface (110s, 210s) of the internal space (111, 211) and communicates with the internal space (111, 211) through a pumping hole (a1), and a partition wall (w1) between the pumping channel (P1, P2) and the It is configured to include buffer channels (B1, B2) communicating through through holes (z1, z2) formed in partition walls (w1, w2) with w2 in between, exhaust channels (E1, E2) communicating with buffer channels (B1, B2) to form a gas exhaust passage, and a common exhaust channel (CE) in which the two exhaust channels (E1, E2) merge at the lower side of the fixed body (300) to discharge gas.

[0038] Although the substrate processing apparatus according to the present invention may be configured so that a processing process of a substrate is performed in a single process chamber unit (100), the present invention will be described below using a substrate processing apparatus (1) equipped with a process chamber unit (100) and a second process chamber unit (200) as an example. In this regard, the designation 'second~' described in this specification and claims refers to the configurations (210, 220, 230, P2, B2, E2,..) of the second process chamber unit (200), which is one other than the first process chamber unit (100) of the embodiment illustrated in the drawings. However, for convenience, if the drawing reference numbers of the corresponding components of the first process chamber unit (100) and the second process chamber unit (200) are listed together with one of the components (e.g., 'susceptor') (e.g., (120, 220)), it is considered that the components of the first process chamber unit (100) (e.g., susceptor (120)) and the components of the second process chamber unit (200) (e.g., second susceptor (220)) are referred to together.

[0039] The process chamber (110, 210) forms an isolated internal space (111, 211) that is cut off from the outside air and is maintained in a vacuum state lower than atmospheric pressure during the processing of the substrate (W). To this end, the process chamber (110, 210) may be equipped with a pressure control unit (not shown) for controlling internal pressure and a temperature control unit (not shown) for controlling internal temperature.

[0040] The internal space (111, 211) is formed in correspondence with the shape of the substrate on which the processing process is performed. For example, when a processing process is performed on a circular disc-shaped substrate (W), the internal space (111, 211) is formed in the shape of a circular cylinder, so that the side (110i, 210i) of the process chamber (110, 210) forms a circular cross-section, and the circumferential direction of the side of the process chamber (110, 210) forms a circumferential direction.

[0041] Although not shown in the drawing, the process chamber (110, 210) is configured to further include an electrode that supplies pulse power to the internal space (111, 211). Here, the frequency of the power is preferably 13.56 MHz to 27.12 MHz and the pulse frequency is preferably 10 to 100 kHz, but is not limited thereto. The pulse power applied by the electrode (140) is continuously applied throughout the process of performing the processing, and can be applied not only in the deposition step of depositing an insulating film but also in the modulation step to generate plasma.

[0042] The above susceptor (120, 220) is installed to be movable in the vertical direction, so that when a substrate (W) is introduced into the process chamber (110, 210), it supports the substrate (W) and maintains the distance to the bottom surface of the shower head (130, 230) at a predetermined value so that the process gas supplied through the shower head (130, 230) contacts the entire surface of the substrate (W) uniformly.

[0043] A substrate (W) mounted on a susceptor (120, 220) may be formed such that a metal layer formed of a conductive material is partially exposed to the outside in order to form an insulating film. Here, the metal layer may be formed of various materials such as tungsten, or may be formed of copper (Cu) which has excellent electrical conductivity. As an insulating film deposited on the metal layer of the substrate (W), a SiN film, a SiCN film, an oxide layer, etc., may be formed.

[0044] The susceptor (120, 220) is also formed in correspondence with the shape of the substrate on which the processing process is performed. For example, when a processing process is performed on a circular disc-shaped substrate (W), the susceptor (120, 220) is formed to support the substrate (W) in a disc shape, and the gap between the side (110i, 210i) of the process chamber (110, 210) and the susceptor (120, 220) is set to a constant dimension along the circumferential direction.

[0045] The shower head (130, 230) uniformly supplies process gas supplied from the gas supply unit (150, 250) to the substrate (W). To this end, if the shape of the substrate (W) is a disc shape, the shower head (130, 230) is arranged such that the gas supply ports are also distributed in a disc shape. Then, the process gas supplied (91) from the gas supply unit (150, 250) is supplied (92) to the substrate (W) through the spray holes (132, 232) of the shower head (130, 230) in a uniformly distributed state.

[0046] In the deposition step of forming an insulating film on the surface of a substrate (W), a source gas and a reaction gas are supplied through a shower head (130, 230), and a carrier gas may be supplied as needed.

[0047] The pumping channels (P1, P2) are formed in a continuous ring shape that is recessed downward from the bottom surface (110s, 210s) of the internal space (111, 211) of the process chamber (110, 210). If the cross-section of the internal space (111, 211) is formed in a circular shape, the pumping channels (P1, P2) are also formed in a circular ring shape.

[0048] The pumping channels (P1, P2) are maintained at a lower pressure state compared to the internal space (111, 211), so that the process gas supplied (91) from the shower head (130, 230) performs a processing process on the substrate and then flows downward through the gap between the susceptor (120, 220) and the internal space (111, 211) to be introduced (93) from the internal space (111, 211) into the pumping channels (P1, P2). To this end, a suction pump, etc. is connected to the common discharge channel (CE), and suction pressure is applied to the pumping channels (P1, P2) through the discharge channels (E1, E2) and buffer channels (B1, B2).

[0049] As illustrated in FIGS. 5 and 6, the pumping channels (P1, P2) can be separated from each other by a ceiling plate (Su) interposed between them and the internal space (111, 211) of the process chamber (110, 210). The ceiling plate (Su) is formed in a ring shape along the corner where the side (110i, 210i) and bottom surface (110s, 210s) of the process chamber (110, 210) meet, and pumping holes (a1, a2) are spaced apart and formed through the corner at intervals along the circumferential direction, so that the pumping channels (P1, P2) and the internal space (111, 211) communicate with each other through the pumping holes (a1, a2).

[0050] Here, the upper surface of the ceiling plate (Su) is positioned on the bottom surface of the process chamber (110, 210) so as to be continuous at the same height with the bottom surface (110s, 210s) of the process chamber (110, 210) without any step. And, the inner surface plate (Si) is installed in a form that is embedded in the side surface (110i, 210i) of the process chamber (110, 210).

[0051] Accordingly, the pumping channel (P1, P2) is formed as a downward indentation in the bottom surface (110s, 210s) along the corner where the side surface (110i, 210i) and the bottom surface (110s, 210s) of the internal space (111, 211) meet. And, the pumping hole (a1, a2) connecting the pumping channel (P1, P2) and the internal space (111, 211) is located at the corner where the side surface (110i, 210i) and the bottom surface (110s, 210s) meet.

[0052] Through this, suction pressure is applied to the internal space at the corner location where the side (110i, 210i) of the internal space (111, 211) and the bottom surface (110s, 210s) of the internal space (111, 211) meet, so the process gas passing through the gap between the susceptor (120, 220) and the side (110i, 210i) of the internal space (111, 211) flows vertically (yy) along the side of the internal space, thereby maintaining the gas flow around the substrate (W) more stably and consistently, so that the thickness of the deposition film applied to the entire surface of the substrate can be formed more uniformly.

[0053] Meanwhile, the present invention is not limited to the configuration shown in the drawings and includes a configuration in which a pumping hole (a1, a2) is positioned at a location spaced apart from the corner where the side (110i, 210i) and the bottom surface (110s, 210s) of the internal space (111, 211) meet, towards the center of the internal space.

[0054] The pumping holes (a1, a2) may be formed as straight holes with a uniform cross-section overall, or as tapered holes (not shown) with a cross-section that gradually decreases as they flow (93) from the internal space (111, 211) into the pumping channels (P1, P2). If the pumping holes (a1, a2) are formed as tapered holes, the flow velocity gradually increases as they flow (93) from the internal space (111, 211) into the pumping channels (P1, P2), thus contributing to ensuring stable flow from the internal space (111, 211) into the pumping channels (P1, P2) and preventing backflow.

[0055] The pumping channels (P1, P2) are formed to have a passage with a constant cross-section along the circumferential direction of the internal space (111, 211), so that acceleration or deceleration caused by changes in the cross-section of the pumping channels (P1, P2) of the gas flowing through the ring-shaped pumping channels (P1, P2) is suppressed.

[0056] As shown in FIGS. 5 and 6, the bottom surface of the pumping channels (P1, P2) is made into a partition wall (w1, w2), and a buffer channel (B1, B2) is formed on the lower side of the pumping channels (P1, P2) with the partition wall (w1, w2) in between.

[0057] A plurality of through holes (z1, z2) are formed in the partition walls (w1, w2), so that the suction pressure applied to the pumping channels (P1, P2) is transmitted from the discharge channels (E1, E2) through the buffer channels (B1, B2). Compared to the configuration of FIG. 1 and FIG. 2, where the suction pressure acts directly on the pumping channels (P1, P2) from the discharge channels (E1, E2), since it acts on the pumping channels (P1, P2) through the buffer channels (B1, B2), the deviation of the suction pressure applied to the pumping channels (P1, P2) in the circumferential direction can be reduced.

[0058] Therefore, since the suction pressure variation along the extended circumferential direction of the pumping channels (P1, P2) is significantly reduced, the flow rate per unit time of the gas flowing (93) from the internal space (111, 211) into the pumping channels (P1, P2) through the pumping hole (a1) formed in the ceiling plate (Su) can be maintained uniformly throughout the entire circumferential direction, and through this, the flow of process gas around the substrate (W) during the processing process becomes symmetrical with respect to the substrate (W), thereby obtaining the advantageous effect of making the processing process, such as deposition on the substrate (W), more uniform across the entire surface of the substrate (W).

[0059] As illustrated in FIG. 7a, the through holes (z1, z2) formed in the bulkheads (w1, w2) are formed to have a larger diameter (dz) compared to the diameter (da) of the pumping holes (a1, a2) formed in the ceiling plate (Su). Preferably, the sum of the open cross-sections of the through holes (z1, z2) connecting the pumping channels (P1, P2) and the buffer channels (B1, B2) is formed to be larger than the sum of the open cross-sections of the pumping holes (a1, a2) connecting the internal space (111, 211) and the pumping channels (P1, P2). Through this, the suction pressure transmitted from the common discharge channel (CE) acts smoothly on the pumping channels (P1, P2), and no bottleneck occurs in the flow of gas discharged from the internal space (111, 211) to the common discharge channel (CE), thereby ensuring smooth discharge.

[0060] Here, the pumping holes (a1, a2) and the through holes (z1, z2) are positioned at different locations along the side perimeter of the process chamber. That is, as shown in FIG. 7a, the pumping holes (a1, a2) and the through holes (z1, z2) are positioned with a deviation in the perimeter direction indicated by rr. Accordingly, the gas (93) introduced from the internal space (111, 211) into the pumping channels (P1, P2) is not introduced directly into the buffer channels (B1, B2), but is instead guided to flow along the perimeter direction inside the pumping channels (P1, P2) and then be introduced into the buffer channels (B1, B2) (94), thereby minimizing the generation of vortices in the pumping channels (P1, P2) and maintaining a constant overall flow state, so that the gas discharge rate during the process can be maintained at a constant level.

[0061] Likewise, the through holes (z1, z2) may be formed as straight holes with a uniform cross-section overall, or as tapered holes with a cross-section that gradually decreases as they flow from the pumping channels (P1, P2) into the buffer channels (B1, B2). If the through holes (z1, z2) are formed as tapered holes, the flow velocity gradually increases as it flows from the pumping channels (P1, P2) into the buffer channels (B1, B2), thereby stabilizing the flow from the pumping channels (P1, P2) into the buffer channels (B1, B2) and suppressing bottleneck phenomena caused by backflow, etc.

[0062] Meanwhile, the through holes (z1, z2) may be distributed in a number equal to or smaller than the number of pumping holes (a1, a2), but as shown in FIG. 7b, they may be formed in a much smaller number compared to the pumping holes (a1, a2) by forming long slit-shaped holes. Specifically, since the suction pressure may be formed slightly higher in the part (EE) of the buffer channel (B1, B2) adjacent to the discharge hole (c1) that communicates with the discharge channel (E1, E2) compared to the opposite part (XX) of the buffer channel (B1, B2) that is far from the discharge channel (E1, E2), the length (ew) of the elongated hole (ze1) in the part of the buffer channel (B1, B2) adjacent to the location (EE) that communicates with the discharge channel (E1, E2) may be formed smaller than the length (xw) of the elongated hole (zx1) in the part (XX) of the buffer channel (B1, B2) that is far from the discharge hole (c1) of the discharge channel (E1, E2). That is, the cross-sectional size of the through hole in the part of the buffer channel (B1, B2) adjacent to the location (EE) of the discharge channel (E1, E2) can be formed smaller than the cross-sectional size of the through hole in the part (XX) of the buffer channel (B1, B2) far from the discharge channel (E1, E2). Through this, the suction pressure deviation along the circumferential direction in the pumping channel (P1, P2) is reduced, thereby making the deviation of the gas discharge flow rate per unit time discharged along the circumferential direction of the substrate smaller.

[0063] Meanwhile, the buffer channels (B1, B2) may be formed in a continuous ring shape that follows the same trajectory as the pumping channels (P1, P2). That is, when through holes are formed in the shape shown in FIG. 7a and 7b or in other arrangements, the buffer channels (B1, B2) may be formed in a continuous ring shape. Meanwhile, as shown in FIG. 7b, if the through holes (ze1, zx1) that penetrate the pumping channels (P1, P2) are locally distributed relative to the pumping channels (P1, P2), the buffer channels (B1, B2) may be formed so that they are locally distributed only at the locations where the through holes (ze1, zx1) are positioned. That is, the buffer channels (B1, B2) according to the present invention may be formed in a continuous ring shape, or they may be discretely distributed only at the locations where the through holes are positioned.

[0064] In the above configuration, the process gas introduced (94) from the pumping channels (P1, P2) into the buffer channels (B1, B2) flows into the discharge channels (E1, E2) through the discharge holes (c1, c2), and passes through the common discharge channel (CE) where the discharge channels (E1, E2) of each process chamber unit (100, 200) and the discharge channels (E1, E2) merge at the lower side of the fixed body (300) and is discharged (96) to the outside of the substrate processing device (1). Here, the discharge holes (c1, c2) may be formed in a slit shape that is long along the extension direction of the buffer channels (B1, B2), or may be formed in the form of a plurality of through holes.

[0065] Meanwhile, forming pumping channels (P1, P2) and buffer channels (B1, B2) on the side of the process chamber (110, 210) by directly machining them is difficult and costly. Accordingly, a ring-shaped channel member (190, 290) is manufactured by providing a ceiling plate (Su) with pumping holes (a1, a2), an outer surface plate (So), an inner surface plate (Si), a partition wall (w1, w2) with a through hole (z1, z2) that partitions the pumping channels (P1, P2) and buffer channels (B1, B2), and a discharge hole (c1, c2) that connects the buffer channels (B1, B2) and the discharge channels (E1, E2), and by inserting the manufactured ring-shaped channel member (190, 290) into a groove formed downwardly in the bottom surface (110s, 210s) of the process chamber (110, 210), the pumping channels (P1, P2) and buffer channels (B1, B2) can be simply installed.

[0066] Meanwhile, a substrate processing apparatus (1) according to a second embodiment of the present invention will be described with reference to FIGS. 8 and 9. However, in describing the configuration and operation of the second embodiment of the present invention, for configurations and operations identical or similar to those of the first embodiment described above, reference numerals identical or similar to those of the first embodiment described above will be assigned in order to clarify the gist of the second embodiment, and descriptions thereof will be omitted.

[0067] A substrate processing apparatus (1') according to the second embodiment of the present invention is similar to the configuration of the first embodiment described above in that it has two process chamber units (100', 200') and in each process chamber unit (100', 200') a pumping channel (P1', P2'), a buffer channel (B1', B2'), and a discharge channel (E1', E2') that joins to a common discharge channel (CE).

[0068] In the second embodiment of the present invention, the buffer channels (B1', B2') are arranged outside the radius of the pumping channels (P1', P2') in a form that surrounds the pumping channels (P1', P2'), and partition walls (w1', w2') separating the buffer channels (B1', B2') and the pumping channels (P1', P2') form the outer surface instead of the bottom surface of the pumping channels (P1', P2').

[0069] Accordingly, the process gas supplied (91) to the process chamber (110', 210') during the processing process of the substrate is supplied (92) to the internal space (111, 211) through the shower head (130, 230), and the process gas used in the processing process on the upper side of the substrate moves vertically downward (yy) through the gap between the susceptor (120, 220) and the internal space (111, 211), flows into the pumping channel (P1', P2') through the pumping hole (a1', a2') (93), and flows into the buffer channel (B1', B2') as a flow outside the radius through the through hole (z1', z2') of the partition wall (w1', w2') forming the outer surface of the pumping channel (P1', P2') and is configured to be discharged.

[0070] Likewise, the buffer channels (B1', B2') and pumping channels (P1', P2') may be formed as ring-shaped channel members (190', 290').

[0071] Meanwhile, according to another embodiment (1) of the present invention, as shown in FIG. 10, a barrier wall (Sd) is interposed between the buffer channels (B1, B2) and the discharge channels (E1, E2) to partition the buffer channels (B1, B2) and the discharge channels (E1, E2). Additionally, a plurality of discharge holes (c1", c2") are formed along the circumferential direction in the barrier wall (Sd), so that the buffer channels (B1, B2) and the discharge channels (E1, E2) can be configured to communicate only through the discharge holes (c1", c2"). Through this, the suction pressure variation within the discharge channels (B1, B2) is reduced more than in the first embodiment, thereby further reducing the suction pressure variation along the circumferential direction in the pumping channels (P1, P2).

[0072] Here, each discharge hole (c1", c2") is formed to have a larger open cross-section compared to each through hole (z1, z2), or the sum of the open cross-sections of the discharge holes (c1", c2") is formed to be larger than the sum of the open cross-sections of the through holes (z1, z2), so that gas flow from the buffer channels (B1, B2) to the discharge channels (E1, E2) can be implemented smoothly without bottlenecking.

[0073] Likewise, the buffer channels (B1, B2) and pumping channels (P1, P2) can be formed as ring-shaped channel members, and additionally include a barrier plate (Sd) compared to the ring-shaped channel members (190, 290) of the first embodiment.

[0074] Meanwhile, in the embodiment illustrated in the drawing, a configuration in which the buffer channels (B1, B2) are formed as one is illustrated, but an Nth buffer channel is disposed between the buffer channels (B1, B2) and the discharge channels (E1, E2), so that the gas introduced into the pumping channels (P1, P2) is sequentially passed through the buffer channels (B1, B2) and the Nth buffer channel and discharged through the discharge channels (E1, E2), thereby further reducing the circumferential suction pressure deviation in the pumping channels (P1, P2).

[0075] As described above, although the present invention has been explained with reference to preferred embodiments, those skilled in the art will understand that various modifications and changes can be made to the combinations of the configurations of the embodiments according to the present invention without departing from the spirit and scope of the invention as set forth in the following claims.

[0076] For example, although the embodiment illustrated in the drawing is an example of a configuration equipped with a buffer channel, within the scope described in the claims, a configuration in which a pumping channel is not equipped with a buffer channel and the pumping channel is directly connected to a discharge channel also falls within the scope of the present invention. Explanation of the symbols

[0077] 1: Substrate processing device 100: First process chamber unit 110: Process chamber 111: Internal space 120: Susceptor 130: Shower Head 200: Second process chamber unit 210: Second process chamber 211: Second internal space 220: Second susceptor 230: 2nd shower head P1, P1': Pumping channel P2, P2': Second pumping channel B1, B1': Buffer channel B2, B2': Second buffer channel E1, E1': Discharge channel E2, E2': Second emission channel CE: Common emission channel

Claims

Claim 1 delete Claim 2 delete Claim 3 A process chamber having an internal space provided therein; a susceptor positioned at a distance from the side of the process chamber to support a substrate in the internal space; a shower head supplying process gas from the upper side of the substrate supported on the susceptor; a pumping channel formed as a downward recess on the bottom surface along the corner where the side of the process chamber meets the bottom surface of the process chamber, forming a continuous ring shape along the perimeter of the bottom surface of the process chamber; a buffer channel positioned in a ring shape with a partition wall between the pumping channel and the buffer channel, communicating with the pumping channel through a through hole in the partition wall; a ring-shaped ceiling plate interposed between the internal space of the process chamber and the pumping channel, positioned on the bottom surface of the process chamber such that its upper surface is continuous at the same height without a step occurring with the bottom surface of the process chamber, and arranged in multiple spaced-apart locations along the corner such that pumping holes communicating with the internal space and the pumping channel are positioned at the corner; and the buffer channel and A substrate processing apparatus comprising: a discharge channel that is connected to apply suction pressure and discharges gas introduced into the pumping channel through the buffer channel; wherein the through holes are spaced apart in multiple places along the circumferential direction of the process chamber and are formed to include slit-shaped elongated holes, wherein the length of the elongated hole at a portion adjacent to the location of the discharge hole connected to the discharge channel is formed to be smaller than the length of the elongated hole far from the location of the discharge hole connected to the discharge channel. Claim 4 A substrate processing apparatus according to claim 3, characterized in that the buffer channel is arranged in a ring shape on one or more of the outer and inner sides of the pumping channel, with the side of the pumping channel serving as the partition. Claim 5 A substrate processing apparatus according to claim 3, characterized in that the buffer channel is arranged in a ring shape on the lower side of the pumping channel, with the bottom surface of the pumping channel serving as the partition. Claim 6 delete Claim 7 delete Claim 8 A substrate processing apparatus according to claim 3, characterized in that the sum of the open cross-sections of the through holes is larger than the sum of the open cross-sections of the pumping holes. Claim 9 A substrate processing apparatus according to claim 3, characterized in that at least one of the through hole and the pumping hole is formed through in a tapered shape with a cross-section that gradually decreases toward the discharge channel. Claim 10 A substrate processing apparatus according to claim 3, characterized in that a barrier wall is formed between the buffer channel and the discharge channel, and a plurality of discharge holes are formed penetrating the barrier wall to communicate the buffer channel and the discharge channel. Claim 11 A substrate processing apparatus according to claim 3, wherein an Nth buffer channel is disposed between the buffer channel and the discharge channel, and gas introduced into the pumping channel passes sequentially through the buffer channel and the Nth buffer channel and is discharged through the discharge channel. Claim 12 delete Claim 13 A substrate processing apparatus according to claim 3, further comprising a ring-shaped channel member formed as a single ring-shaped body having the ceiling plate and the bulkhead, and inserted and installed in a portion formed as a recess around the side perimeter of the process chamber, wherein the pumping channel and the buffer channel are formed by the ring-shaped channel member. Claim 14 A substrate processing apparatus according to claim 13, wherein the ring-shaped channel member comprises a barrier plate having a plurality of discharge holes formed between the buffer channel and the discharge channel. Claim 15 A substrate processing apparatus according to any one of claims 3 to 5, any one of claims 8 to 11, or claim 13 or 14, wherein at least one of the pumping channel and the buffer channel is formed as a passage having a constant cross-section along the perimeter of the internal space. Claim 16 A substrate processing apparatus according to any one of claims 3 to 5, any one of claims 8 to 11, or claim 13 or 14, wherein the susceptor is circular in shape and the gap between the outer surface of the susceptor and the inner surface of the internal space is formed uniformly along the lateral circumference direction. Claim 17 A substrate processing apparatus according to any one of claims 3 to 5, any one of claims 8 to 11, or claims 13 or 14, further comprising: a second process chamber having a second internal space provided therein and arranged parallel to the process chamber; a second susceptor for mounting a second substrate in the second internal space; a second shower head for supplying process gas from the upper side of the second substrate mounted on the second susceptor; a second pumping channel formed as a downward recess on the bottom surface of the second process chamber in a ring shape continuous along the perimeter of the second process chamber, having a second pumping hole formed therein that communicates with the second internal space; and a second buffer channel communicating through a through hole of the second partition wall with the second pumping channel and the second partition wall in between, wherein the second buffer channel communicates with the discharge channel.

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