High vacuum static electricity removing device with elbow structure

Abstract

The present invention relates to a vacuum static elimination device having an elbow structure, and more specifically, to a vacuum static elimination device comprising an ion source unit including an elbow housing so that an ion beam emitted from an ion source is not irradiated directly onto a substrate. By positioning the ion source unit on the upper or side surface of a process chamber, the intensity of the ion beam irradiated onto the substrate and the portion of the substrate where the static elimination effect occurs can be selectively controlled, thereby enabling an effective static elimination effect.

Description

Technology Field

[0001] The present embodiment relates to a vacuum static electricity removal device having an elbow structure, and more specifically, to a vacuum static electricity removal device comprising an ion source unit that provides plasma for removing static electricity in a vacuum environment. Background Technology

[0002] Static electricity is generated by various causes, including friction and peeling. Such static electricity can occur in diverse environments, regardless of whether the material is a solid, liquid, insulator, or conductor. While the generated static electricity consists of equal amounts of positive and negative charges, in actual processes, static electricity of only one polarity often manifests due to the difference in capacitance between the two.

[0003] In the manufacturing process of electronic devices such as memory elements, flat panel displays, and integrated circuits, foreign substances may adhere to the electronic devices due to the generation of static electricity, or patterns may be damaged by electrostatic discharge.

[0004] In particular, static electricity can be generated on the surface of a substrate—e.g., glass—during the deposition process of a display panel, and in the deposition process of an Organic Light Emitting Diode (OLED) display panel, static electricity generated during substrate transport causes a problem in which the substrate is physically damaged by the mask stick when attaching or detaching the mask.

[0005] Various methods are being implemented to suppress or eliminate static electricity generation during the deposition process of OLED panels, and methods to eliminate static electricity using ionization devices are mainly being proposed. Ionization devices generate positive and negative ions and release them into the air using a fan or compressed air, and the released ions neutralize the charged particles by providing ion particles opposite to the charged particles of the substrate where static electricity has been generated, thereby eliminating static electricity.

[0006] However, since ionization devices for electrostatic discharge release ions into the air in a non-vacuum environment, they present a problem in that they are difficult to apply in vacuum environments where high cleanliness must be maintained. Conventional electrostatic discharge processes involve two steps: forming a thin film of an electronic device in a vacuum environment, and then removing static electricity through a separate discharge process in a non-vacuum environment.

[0007] Conventional electrostatic discharge devices have limitations in preventing device damage caused by static electricity because the thin film process and the static discharge process are separated, making it impossible to immediately remove static electricity generated during thin film formation.

[0008] In addition, conventional electrostatic discharge devices directly irradiate the substrate with ion particles and ion light generated during the ion beam generation process, thereby causing damage to the substrate. The problem to be solved

[0009] Against this backdrop, the objective of the present embodiment is to provide an antistatic device capable of supplying ion particles in a vacuum environment.

[0010] Another objective of the present embodiment is to provide an electrostatic discharge device for a vacuum environment that can simultaneously achieve the effects of preventing substrate damage and ion transfer by adding an elbow housing through which an ion beam passes so that electrostatic discharge can be removed through an electrostatic discharge process in a vacuum environment.

[0011] Another objective of the present embodiment is to provide an antistatic device in which an ion source unit and an elbow housing connected thereto can be connected to the upper surface or side surface of a process chamber to control the direction of an ion beam irradiated onto a substrate. means of solving the problem

[0012] To achieve the aforementioned objective, in one aspect, the present embodiment provides a vacuum static elimination device comprising: an ion source unit that generates ions causing a static elimination reaction on a substrate and discharges them into a process chamber; and an elbow housing connected to the ion source unit, through which the ions pass, and having an internal passage that is bent. The ions are supplied to the process chamber after colliding with the inner wall of the elbow housing by the bent portion of the elbow housing, and the ion source unit and the elbow housing are connected to the side of the process chamber, and the ion source unit is connected to the side of the process chamber in a manner that is detachably attachable to the process chamber, and the ion source unit simultaneously supplies the ions to a first surface and a second surface of the substrate from the side of the substrate through the discharge port of the elbow housing, and the substrate may have a plate shape, the first surface may be the upper surface of the plate-shaped substrate, and the second surface may be the lower surface of the substrate facing the upper surface.

[0013] In a high vacuum static elimination device, the elbow housing may include a quartz inner wall.

[0014] In a high vacuum static elimination device, the ion source unit and the elbow housing can be connected to the upper surface of the process chamber.

[0015] In a high vacuum static elimination device, the ion source unit and the elbow housing can be connected to the side of the process chamber.

[0016] In a high vacuum static elimination device, the ion source unit can supply an ion beam to the first surface and the second surface of the substrate.

[0017] In a high vacuum static elimination device, the ion source unit may include: an ion source that generates an ion beam containing ion particles using the process gas; and an ion source housing that blocks the process gas from an external gas.

[0018] A high vacuum static elimination device may include: a gate valve that selectively emits or blocks the ion beam emitted from the ion source unit into the process chamber; and a vacuum pump installed on one side of the process chamber to maintain a vacuum state.

[0019] A high vacuum static discharge device may further include a power control device that adjusts the set value of the voltage or current transmitted to the ion source unit according to the characteristics of the substrate.

[0020] In a high vacuum static elimination device, the ion source unit may be characterized by ionizing residual gas in the process chamber to generate ions and electrons.

[0021] In a high vacuum static elimination device, the ion source unit may further include a process gas inlet, which is a hole for receiving process gas, and the ion source unit may react the introduced process gas with plasma and generate an ion beam.

[0022] A high vacuum static elimination device may further include a gas supply unit that supplies process gas to the ion source unit; and a mass flow controller (MFC) that controls the flow rate of the process gas.

[0023] In a high vacuum static discharge device, the process gas for generating an ion beam is not separately introduced into the ion source unit, and the ion beam is generated using the air present within the ion source unit. Effects of the invention

[0024] As described above, according to the present embodiment, an ion beam can be stably supplied to a substrate in a vacuum environment.

[0025] According to the present embodiment, since ionized gas is generated by the plasma reaction of the process gas, rapid static elimination is possible.

[0026] In addition, according to the present embodiment, by using an elbow housing, it is possible to prevent the ion beam from being directly irradiated onto the substrate, and thereby reduce the noise generated. Brief explanation of the drawing

[0027] FIG. 1 is a configuration diagram of a high vacuum static elimination device according to one embodiment. FIG. 2 is a cross-sectional view of a high vacuum static elimination device and a process chamber according to one embodiment. FIG. 3 is a diagram showing the movement of ionized gas in a high vacuum static elimination device according to one embodiment. FIG. 4 is a diagram showing the configuration of an ion source unit according to one embodiment. FIG. 5 is a cross-sectional view of an ion source unit according to one embodiment. FIG. 6 is a cross-sectional view of an ion source unit equipped with an elbow housing according to one embodiment. FIG. 7 is a cross-sectional example of an ion source unit mounted on the upper surface of a process chamber according to one embodiment. FIG. 8 is a cross-sectional example of an ion source unit mounted on the side of a process chamber according to one embodiment. Specific details for implementing the invention

[0028] Some embodiments are described in detail below with reference to exemplary drawings. It should be noted that in assigning reference numerals to the components of each drawing, the same components are given the same reference numeral whenever possible, even if they are shown in different drawings. Furthermore, in describing the present invention, if it is determined that a detailed description of related known components or functions could obscure the essence of the invention, such detailed description is omitted.

[0029] Additionally, terms such as first, second, A, B, (a), (b), etc., may be used when describing components. These terms are intended only to distinguish the component from other components and do not limit the nature, order, or sequence of the component. Where it is stated that a component is "connected," "combined," or "joined" to another component, it should be understood that the component may be directly connected or joined to the other component, but that another component may also be "connected," "combined," or "joined" between each component.

[0030] FIG. 1 is a configuration diagram of a high vacuum static elimination device according to one embodiment.

[0031] FIG. 2 is a cross-sectional view of a high vacuum static elimination device and a process chamber according to one embodiment.

[0032] FIG. 3 is a diagram showing the movement of ionized gas in a high vacuum static elimination device according to one embodiment.

[0033] Referring to FIGS. 1, 2 and 3, the high vacuum static elimination device (100) may include a gas supply unit (110) that controls the flow rate by supplying process gas, an ion source (120) that generates ion gas by supplying power from the outside, a source guide unit (130) that induces an ignition reaction in the ion source (120), a throttle valve (140) that controls the flow rate, a vacuum pump (150) installed at the upper end of the throttle valve (140) to maintain a vacuum degree suitable for ignition, and a normal open type gate valve (160) located at the lower end of the source guide unit (130).

[0034] The gas supply unit (110) may include an inlet that can be fitted into a tube forming the top of the ion source (120).

[0035] First, the gas supply unit (110) can supply gas to the high vacuum static elimination device (100). At this time, the supplied gas may be argon (Ar) gas or nitrogen (N2) gas, etc.

[0036] The gas supply unit (110) can supply an appropriate amount of gas to the ion source (120) by including a mass flow controller (hereinafter, MFC).

[0037] The ion source (120) creates a plasma to generate ionized gas and emits an ion beam.

[0038] At this time, the ion source (120) may be an ion beam source capable of controlling the charge amount. That is, the ion source (120) according to one embodiment adjusts the acceleration direction of electrons, thereby having the effect of significantly reducing internal etching, arcing, and particle generation compared to conventional technology.

[0039] When gas supplied through the gas supply unit (110) is introduced into the ion source (120) and a high voltage is applied to the ion source (120), electrons, neutral particles, and positive ions are emitted from inside the ion source (120).

[0040] At this time, the vacuum pump (150) maintains a high vacuum state so that ions can move in the plasma state within the ion source (120). For example, the pressure within the ion source (120) is 10 -3 Electric discharge and ignition reactions can be performed while maintaining [torr].

[0041] However, the pressure maintained in the ion source (120) is 10 -3 Maintaining [torr] is one example, where the pressure inside the ion source (120) is up to 3*10 -3When maintained at [torr], electric discharge and ignition reactions may be possible.

[0042] In addition, as an example, the ion source (120) may be designed to be installed above the process chamber (200) by adopting a remote plasma source (RPS) method. It may be desirable to adopt the RPS method to overcome the disadvantage that when using a direct plasma source, charges accumulate at the interface due to ion collisions within the plasma, thereby damaging the device.

[0043] Accordingly, an ionized gas can be generated in the ion source (120) and an ion beam can be emitted by an electric field. At this time, the energy of the emitted ions can be 500 to 3500 eV, but is not limited thereto.

[0044] At this time, it is possible to control the shape of the beam by the mask in the ion source (120).

[0045] Additionally, the ion beam emitted from the ion source (120) passes through the source guide section (130) and the gate valve (160), which is a normally open valve, and is emitted into the process chamber.

[0046] At this time, the gate valve (160), which is a normally open valve, is normally open, but can be closed when maintenance is required.

[0047] Next, as shown in FIG. 2, the vacuum pump (150) may employ a turbo-molecular pump (TMP). A turbo-molecular pump is commonly employed as one of the high-vacuum pumps to create a vacuum environment.

[0048] TMP includes a structure in which, for example, multiple blades are stacked in layers and rotate at high speed, and gas particles entering the structure are struck by the blades and flung outward. In other words, TMP utilizes the principle in which gas particles are struck by rotating blades, gain downward momentum, pass through a fixed blade below to the next blade, and thereby draw out the gas particles inside to the outside.

[0049] In addition, a throttle valve (140) is installed in the pumping line at the bottom of the vacuum pump (150) used to create a vacuum environment, so that the throttle valve (140) automatically adjusts the pipe in conjunction with the vacuum level read through the gauge to continuously maintain the desired vacuum level.

[0050] That is, it is possible to maintain a constant vacuum level in the ion source (120) by adjusting the vacuum level with the throttle valve (140).

[0051] Ionized argon gas or nitrogen gas is generated in an ion source (120) having a constant vacuum level, and a beam is emitted by an electric field, and the ionized argon gas or nitrogen gas can pass through a gate valve (160) and be introduced into a process chamber (200).

[0052] That is, as illustrated in FIG. 3, for example, when argon (Ar) gas is supplied from the gas supply unit (110), a constant vacuum level is maintained within the ion source (120) by the vacuum pump (150) and throttle valve (140) so that an electric discharge and ignition reaction are performed and the ionized argon gas (Ar) contained in the emitted beam is + ) can pass through the gate valve (160) and be introduced into the process chamber (200).

[0053] In particular, argon gas (Ar +Since positive (+) ions and potentials such as ) are uniformly distributed in the space within the process chamber (200), the current potential in the object to be neutralized (glass) within the process chamber (200) can be 0[V].

[0054] In addition, because low power is used, the target object for static electricity in the process chamber (200) can be used even on inorganic materials or substrates in an inorganic state, such as LCD or OLED.

[0055] Next, one axis of the high vacuum static elimination device (100) shown in FIG. 2 is in contact with the process chamber (200) by the throttle valve (140), and the other axis further includes a separate support (180), thereby supporting the high vacuum static elimination device (100) so that it can be fixed while maintaining a certain distance from the process chamber (200).

[0056] At this time, the support (180) may be able to adjust the distance so that the high vacuum static discharge device (100) and the process chamber (200) maintain a constant horizontal distance.

[0057] Additionally, the process chamber (200) may have an internal space for deposition, etc. As shown in FIG. 2, a static discharge target (200b) requiring static discharge is introduced into one passage (200a) of the process chamber, and when the static discharge target is placed in a designated position of the process chamber (200), it may include another passage (200c) connected to a gate valve (160) to introduce an ion beam into the static discharge target. Thus, when static discharge is completed, the static discharge target exits through another passage (200d) located on the opposite side of the one passage (200a) of the process chamber.

[0058] That is, the process chamber (200) has an internal space for depositing a thin film of a static electricity target, although it is not illustrated, and may further include a deposition module that internally deposits an evaporative material or target onto the static electricity target.

[0059] As described in FIGS. 1 to 3, the high vacuum static elimination device (100) can have one end of the gate valve (160) connected to the process chamber (200). However, the high vacuum static elimination device (100) may further include a configuration of the process chamber (200) connected to the gate valve (160).

[0060] Next, the high vacuum static elimination device (100) further includes a control device, and through the control device, can control a gas supply unit (110), an ion source (120), a throttle valve (140), and a gate valve (160), etc.

[0061] In addition, the control device can adjust the set value of the voltage or current delivered to the ion source unit according to the characteristics of the substrate. In this case, the control device may be defined as a power control device, etc.

[0062] The control device can set the power value of the ion source (120) to a minimum intensity capable of protecting the organic layer of the substrate and eliminating electrostatic charge, and can operate the device by adjusting the optimized CW (Continues Wattage), CV (Continues Voltage), and CC (Continues Current) setting values ​​according to the characteristics of the substrate so as not to destroy the pattern or organic layer of the substrate. For example, the control device can adjust the density and intensity of the ion beam by setting the CW to 700W or less, setting the CV to 800~1500V, and setting the CC to 100mA, and the present embodiment may have various setting values ​​that are not limited thereto.

[0063] FIG. 4 is a diagram showing the configuration of an ion source unit according to one embodiment.

[0064] FIG. 5 is a cross-sectional view of an ion source unit according to one embodiment.

[0066] * Referring to FIGS. 4 and 5, an ion source unit (300) according to one embodiment may include an ion source housing (310), an ion source (320), a center ring (330), and a reducing unit (340). Additionally, the ion source unit (300) may be connected to a baffle shaft (350) and a baffle (360).

[0067] The ion source housing (310) may be a structure for preventing the ion source unit (300) from coming into contact with the outside and may serve to block the inflow of gas from the outside. Additionally, it may be configured to prevent the ion source (320) and the process gas supplied to the ion source (320) from coming into contact with gas outside the ion source unit (300).

[0068] The ion source (320) can turn the process gas into plasma to generate ionized gas and emit an ion beam.

[0069] The centering (330) and reducing unit (340) may be components that facilitate the connection between the ion source housing (310), the ion source (320), and the process chamber (400). The shape and position of the centering (330) and reducing unit (340) are not limited to the shape and position shown in the drawing and may be freely changed as needed.

[0070] The ion source unit (300) may include a first clamp, a second clamp, a cooling water inlet, a cooling water outlet, and a gas inlet.

[0071] The first clamp and the second clamp can support and fix the conduit of the ion source (320). Specifically, the first clamp supports the ion source (320) and enables vertical adjustment, and the second clamp can be formed as a vacuum seal structure to maintain a vacuum inside the ion source unit (300). The first clamp and the second clamp can be defined as clamp structures, etc.

[0072] The first clamp can enable adjustment of the beam working distance of the ion source (320), so that the intensity of the ion beam can be adjusted by adjusting the vertical distance from the substrate, or the range of the ion beam can be adjusted. In addition, the first clamp can be utilized to adjust the flow rate of ion particles supplied to the substrate by adjusting the relative distance from the baffle.

[0073] The ion source housing (310) is a structure for blocking contact with the outside of the ion source unit (300) and simultaneously introducing gas from the outside, and may include a gas inlet at a point on the outside of the ion source housing (310).

[0074] Accordingly, a process gas supplied from a gas supply unit is introduced through the gas inlet. At this time, the process gas introduced may be an inert gas such as argon (Ar) gas or nitrogen (N2) gas. Since the ion source unit (300) generates an ion beam by using such an inert gas as the process gas, rapid static elimination may be possible.

[0075] Ionization gas control is easy by injecting a separate process gas (Ar or N2) outside the ion beam source.

[0076] The ion source unit (300) may be detachable from the process chamber and may be attached to one side of the process chamber. For example, the ion source unit (300) may be placed on the upper surface or side of the process chamber, and the placement position may be defined by considering the direction of movement of the substrate passing through the process chamber and the cross-section of the substrate.

[0077] The ion source (320) may be a linear ion source or a circular ion source, but is not limited thereto.

[0078] In the case of a linear ion source, the ion beam irradiation range is wide, and full-surface irradiation of a large-area glass surface is possible. Since the ion beam is irradiated over the entire surface of the glass, static electricity can be eliminated quickly and uniformly, and since ionized neutral gas is irradiated over the entire surface of the glass, more efficient equipment operation is possible compared to a circular ion source. In order to satisfy the same ion beam irradiation range, multiple ion sources must be arranged in a circular ion source.

[0079] The ion source unit (300) can be defined as a linear ion source unit when a linear ion source is adopted, and as a circular ion source unit when a circular ion source is adopted.

[0080] Meanwhile, the ion source unit (300) can generate an ion beam using air present within the ion source unit (300), rather than a process gas separately introduced for generating an ion beam, such as argon (Ar) gas or nitrogen (N2) gas. In this case, the ion source unit (300) may not include a gas inlet, and a gas supply unit and a flow rate controller used to supply a separate process gas may not be used.

[0081] Additionally, the ion source unit (300) may generate an ion beam using a Townsend discharge (also called a dark discharge) that does not generate plasma for ion beam generation and contains little to no light (or faintly contains light). In this case, the process gas used for ion beam generation may be air. Also, the internal pressure of the ion source unit (300) and the process chamber (500) is 10 -4 to 10 -8 It can be maintained at torr. However, the range of internal pressure is not limited to this, and can be changed to the optimal pressure for generating an ion beam by Townsend discharge of the process gas.

[0082] Specifically, gas discharges can be broadly classified into three types: Townsend discharge (also known as dark discharge), glow discharge, and arc discharge.

[0083] Townsend discharge is generally submilli (10 -3 It operates at a pressure of Torr and is characterized by generating small amounts of ions and free electrons. Specifically, Townsend discharge is 10 -4 It can be performed under pressure conditions of [torr] or less, and 10 -4 to 10 -8 It can be performed under [torr] conditions. Townsend discharge refers to a case where only a small number of ions are formed because a continuous gas excited state cannot be created, due to a small acceleration energy from the electric field or insufficient gas to excite electrons by collision. Furthermore, light generation is minimized because a continuous gas excited state cannot be created.

[0084] First, when voltage is applied to a gas, a region can be formed where gas ions (charges) are generated and current can be produced without or with little to no light; this type of gas discharge is called Townsend Discharge. Then, when the supplied voltage exceeds the threshold of the Townsend discharge, an avalanche (also called a breakdown) occurs, resulting in a phenomenon where the current increases while the voltage decreases. Subsequently, it reaches the Normal Glow Discharge region; in this region, the ratio of ion generation to ion loss is equal, and since there are sufficient electrons and ions required for the discharge, the discharge is maintained stably, and a luminescence phenomenon occurs. Afterward, if voltage is further applied, the voltage remains unchanged but the current increases, expanding the discharge region. However, at a certain point, a region appears where the voltage, which had been maintaining a constant value, suddenly increases rapidly; this region is called the Abnormal Glow Discharge region. Furthermore, as the current increases further, a phenomenon occurs where the voltage drops sharply again; this phenomenon is called arc discharge.

[0085] Normal glow discharge refers to a discharge that creates a continuous gas excited state at sufficient gas and voltage in Townsend discharge (dark discharge) and forms a plasma while maintaining multiple excited states.

[0086] A high vacuum static elimination device according to one embodiment can generate an ion beam using air and emit it into a process chamber without using a separately introduced process gas. Furthermore, by performing Townsend discharge on the air, light is not generated or only very weak light is generated, thereby preventing damage to the substrate caused by light while effectively eliminating static electricity.

[0087] FIG. 6 is a cross-sectional view of an ion source unit equipped with an elbow housing according to one embodiment.

[0088] Referring to FIG. 6, the reducing unit (340) of the ion source unit (300) according to the present embodiment may be replaced with an elbow housing (370) as shown in FIG. 6. The elbow housing (370) may be a component included in the ion source unit (300) or a separate component not included in the ion source unit (300). Here, the elbow housing (370) may serve as a passage through which an ion beam emitted from the ion source unit (300) passes. Additionally, the elbow housing (370) may include a quartz inner wall (380).

[0089] By configuring the inner wall of the elbow housing (370) with quartz, a stable ion beam can be supplied to the process chamber (400). Specifically, quartz has the characteristics of excellent durability without affecting the electric field, excellent plasma corrosion resistance, and the ability to control impurity content. In addition, it has excellent durability against etching, which prevents unintended secondary reactions. Furthermore, it has low roughness, so it has excellent stability against surface charge. Also, since quartz is transparent, it has the characteristic of being advantageous for crack management.

[0090] The quartz inner wall (380) can be called a quartz inner wall.

[0091] The elbow housing (370) can be formed at a specific angle for the internal passage formed by the elbow housing (370), for example, 60°, 70°, 80°, 90°, 100°, 110°, 120°, 130°, 140°, 150°, etc. Additionally, it can be formed at an angle between 60° and 150°, and in particular, the angle of the internal passage of the elbow housing (370) can be formed at 90° or 130°. FIG. 6 shows the internal passage of the elbow housing (370) formed at approximately 90°, but it is not limited thereto and can be formed in various ways to control the intensity of the ion beam and the range of the static elimination effect applied to the substrate (500).

[0092] The ion beam emitted from the ion source unit (300) can collide with the inner wall of the elbow housing (370) by the bend formed in the elbow housing (370), and the ion beam after colliding with the inner wall can be supplied to the process chamber (400).

[0093] By forming the inner wall of the elbow housing (370) to include a section bent at a specific angle rather than a straight line as exemplified in FIG. 6, it is possible to prevent the ion beam emitted from the ion source unit (300) from being directed directly onto the substrate. Accordingly, it is possible to expect the effect of preventing damage to the surface organic film of the static discharge target—e.g., a substrate or a glass substrate—and preventing deformation of the surface properties due to surface heating and etching of the static discharge target.

[0094] Meanwhile, when gas supplied through the gas supply unit is introduced into the ion source unit (300) and a high voltage is applied to the ion source unit (300), electrons, neutral particles, and positive ions can be emitted from inside the ion source unit (300).

[0095] At this time, a vacuum pump equipped in a high-vacuum static elimination device maintains a high vacuum state so that ions can move in a plasma state within the ion source unit (300). For example, the pressure within the ion source (320) is 10-5 to 10 -3 By performing electric discharge and ignition reactions while maintaining [torr], the internal process gas can be maintained in a plasma state.

[0096] The ion source unit (300) has a pressure of 10 at a vacuum level where a plasma state is possible. -5 to 10 -3 [torr], and to maintain this vacuum level, the base pressure state of the process chamber (200) is set to 10 -6 to 10 -5 Maintain at [torr] and introduce argon (Ar) gas or nitrogen (N2) gas as a process gas at a value of 1 to 20 [sccm] to increase the pressure to 10 -5 to 10 -3 It can be set to [torr]. In order to maintain a vacuum state so that the thin film process and the static elimination process are not separated, the pressure of the ion source unit and the pressure of the process chamber can be maintained at the same level or within a certain range.

[0097] Not only is it possible to control the shape of the beam by means of a mask within the ion source unit (300), but it is also possible to widely irradiate the ion beam into the process chamber depending on the shape of the ion source unit (300).

[0098] FIG. 7 is a cross-sectional example of an ion source unit mounted on the upper surface of a process chamber according to one embodiment.

[0099] As shown in FIG. 7, the ion source unit (300) including the elbow housing (370) can be connected to the upper surface of the process chamber (400).

[0100] An ion beam emitted from the ion source (320) of the ion source unit (300) may collide with the inner wall of the elbow housing (370), and the ion beam after the collision may be irradiated onto a substrate (500) located in the process chamber (400). Accordingly, the ion beam from the ion source (320) may not be irradiated directly onto the substrate (500) but may be irradiated onto one side of the substrate (500).

[0101] The ion beam colliding with the inner wall (380) of the elbow housing (370) can be supplied to the substrate (500) to generate an antistatic effect. By preventing the ion beam emitted from the ion source unit (300) from being directly directed at the substrate (500), the surface properties of the substrate (500) can be prevented from changing or being damaged.

[0102] In addition, the length and width of the elbow housing (370) can be freely changed to control the intensity and strength of the ion beam applied to the substrate (500).

[0103] The substrate (500) may be introduced into the process chamber (400) on one side and discharged on the other side to perform static electricity removal, but is not limited thereto.

[0104] FIG. 8 is a cross-sectional example of an ion source unit mounted on the side of a process chamber according to one embodiment.

[0105] The ion source unit (300), including the elbow housing (370), can be connected to one side of the process chamber (400).

[0106] An ion beam emitted from an ion source (320) can be supplied to a process chamber (400) after colliding with the inner wall of an elbow housing (370). Then, an ion source unit (300) installed on the side of the process chamber (400) can irradiate an ion beam onto the upper and lower surfaces (or the first surface and the second surface) of a substrate (500). Here, the substrate (500) can typically take the form of a thin and wide plate, and accordingly, the first surface and the second surface may refer to the wide surfaces facing each other of the thin and wide plate.

[0107] The substrate (500) may be introduced into the process chamber (400) on one side and discharged on the other side to perform static electricity removal, but is not limited thereto.

[0108] Additionally, when the ion source unit (300) is connected to the side of the process chamber (400), the substrate (500) may proceed in a direction orthogonal to the direction in which the ion beam is irradiated within the process chamber (400)—for example, when looking at FIG. 8, not in the up, down, left, or right directions, but in the direction of going inward or coming outward—but is not limited thereto.

[0109] Accordingly, by selectively installing an ion source unit (300) on the upper surface or side of the process chamber (400), not only is the ion beam not directly irradiated onto the substrate (500), but the intensity of the ion beam applied to the substrate (500) and the portion of the substrate (500) where the static elimination effect occurs can also be selectively controlled.

[0110] In addition, accordingly, it is possible to prevent the ion beam emitted from the ion source unit (300) from being directly irradiated onto the substrate (500), thereby preventing the surface properties of the substrate (500) from changing or being damaged, and also to flexibly adjust the static elimination position and range.

[0111] Terms such as "include," "compose," or "have" as described above, unless specifically stated otherwise, mean that the relevant component may be inherent; therefore, they should be interpreted as allowing for the inclusion of additional components rather than excluding them. All terms, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains, unless otherwise defined. Commonly used terms, such as those defined in advance, should be interpreted in accordance with their meaning in the context of the relevant technology and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0112] The foregoing description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention.

Claims

Claim 1 An ion source unit that generates ions causing an antistatic reaction on a substrate and emits them into a process chamber; and includes an elbow housing connected to the ion source unit, through which the ion passes, and having an internal passage that is bent; wherein the ion is supplied to the process chamber after colliding with the inner wall of the elbow housing by the bent portion of the elbow housing, the ion source unit and the elbow housing are connected to the side of the process chamber, and the ion source unit is connected to the side of the process chamber in a manner that is detachably attachable to the process chamber, the discharge port of the elbow housing through which the ion is emitted into the process chamber is positioned toward the side of the substrate, the ion source unit simultaneously supplies the ion to the first surface and the second surface of the substrate from the side of the substrate through the discharge port of the elbow housing, the substrate has a plate shape, the first surface is the upper surface of the plate-shaped substrate, and the second surface is the lower surface of the substrate facing the upper surface, the elbow housing includes a quartz inner wall, and output by a mask A vacuum static elimination device comprising a normally open type gate valve that controls the shape of the ion beam and selectively emits or blocks the ions emitted from the ion source unit into the process chamber, wherein the substrate is an LCD (Liquid Crystal Display) or OLED (Organic Light-Emitting Diode) substrate. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 A vacuum static elimination device according to claim 1, wherein the ion source unit comprises: an ion source that generates an ion beam containing ion particles using a process gas; and an ion source housing that blocks the process gas from an external gas. Claim 7 delete Claim 8 A vacuum static elimination device according to claim 1, further comprising a power control device that adjusts a set value of voltage or current transmitted to the ion source unit according to the characteristics of the substrate. Claim 9 In claim 1, the vacuum static elimination device wherein the ion source unit ionizes residual gas to generate the ions. Claim 10 A vacuum static elimination device according to claim 1, wherein the ion source unit further includes a process gas inlet, which is a hole for receiving process gas, and the ion source unit reacts the introduced process gas with plasma and generates an ion beam. Claim 11 A vacuum static elimination device according to claim 10, further comprising: a gas supply unit for supplying process gas to the ion source unit; and a mass flow controller (MFC) for controlling the flow rate of the process gas. Claim 12 A vacuum static elimination device according to claim 1, characterized in that a process gas for generating the ions is not separately introduced into the ion source unit, and the ions are generated using air present within the ion source unit.

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