Method, apparatus, and computer program of processing a lithography object

Abstract

The present disclosure relates to a method for processing a lithographic object. The method comprises the step of processing a marking using a particle beam and an etching gas to reduce the volume of the marking—the marking being deposited on the object and remaining on the object. The present invention also relates to a corresponding computer program and a corresponding device.

Description

Technology Field

[0001] The present application was filed with the German Patent Office on June 9, 2023, and claims priority to German Patent Application No. 10 2023 205 392.6 titled “Method for treating DC marks for repairing a lithography mask,” the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to the processing of marking of an object, for example, a lithographic object, using a particle beam, a corresponding computer program, and a corresponding device. Background Technology

[0003] In the semiconductor industry, increasingly smaller structures are created on wafers to increase integration density. Among the methods used to create these structures is a lithographic method for imaging them onto the wafer. Examples of lithographic methods may include photolithography, UV lithography, DUV lithography, EUV lithography, X-ray lithography, nanoimprint lithography, etc. In this process, lithography typically uses a mask containing a pattern for imaging the desired structure on the wafer (e.g., a photomask, an exposure mask, a reticle, or a stamp in the case of nanoimprint lithography).

[0004] As integration density increases, requirements related to mask production also increase (for example, as a result of the consequent reduction in structural dimensions on the mask or greater material requirements in lithography). Consequently, the mask production process becomes increasingly complex, time-consuming, and costly. Mask defects (e.g., defects) are not always avoidable in the process.

[0005] Therefore, for example, to correct or repair mask defects on the mask, the mask may need to be precisely processed in a (predefined) work area. For example, this can be implemented through a particle beam-based processing procedure, where a particle beam is used to process the mask. The particle beam-based processing procedure may include, for example, particle beam-induced deposition and / or etching. The particle beam-based processing procedure may also include an image of the mask recorded through the particle beam.

[0006] It may be necessary to rely on markings to perform particle beam-based processing of the mask in a prescribed manner. For example, the markings may be raster-scanned (local) reference markings for, for example, to correct (drift) and / or monitor the processing procedure by the particle beam. In this case, it may be customary to deposit markings on the mask so that the prescribed processing can be performed at any desired site on the mask.

[0007] One potential issue in this process is that while the deposited markings may be used as intended for particle beam-based processing, they can subsequently become a nuisance to the mask itself. For example, markings deposited on the mask can cause optical errors during lithographic methods (e.g., limitations of optical specifications). Consequently, the markings themselves can correspond to defects on the mask.

[0008] Known approaches are typically based on removing markings without residue after the processing procedure to avoid optical errors.

[0009] However, as mask technology advances, this approach cannot (always) be applied to all lithographic objects. For example, procedures to completely remove markings can lead to damage to the lithographic object.

[0010] Accordingly, the present invention is based on an object that provides an improved or alternative option for processing a lithography object.

[0011] This objective is achieved at least partially by various embodiments of the present invention.

[0012] A first aspect of the present invention relates to a method for processing a lithographic object, the method comprising the step of processing a marking using a particle beam and an etching gas to reduce the volume of the marking—said that the marking is deposited on the object and remains on the object.

[0013] A lithography object (as described herein) may include, for example, a mask for a lithographic method. For example, the object may include an EUV mask for EUV lithography. For example, the EUV mask may include an absorption and / or phase-shifting EUV mask. However, it is also conceivable that the object may include a mask for any other lithographic method. For example, the object may include a mask for DUV lithography, UV lithography, X-ray lithography, or nanoimprint lithography.

[0014] In one example, a lithographic object may also include a mask blank. In the lithographic industry, a mask blank is a known starting material for a mask. For example, a mask blank may not include any imaging structure such as the mask itself, but may include its layer material.

[0015] For example, the marking may be deposited as a reference structure for correcting the particle beam to process (e.g., repair) an object. The marking may include, for example, a reference structure for drift correction (DC) of the particle beam.

[0016] In this regard, it should be noted that the lithographic object may include, for example, an electrically insulating sample. Therefore, raster-scanning the object using charged particles (e.g., electrons in an electron beam, ions in an ion beam) can cause electrostatic charging of the object. This charging can unintentionally deflect the particle beam from the intended point of incidence. This effect is referred to, for example, as particle beam drift, and other mechanisms may also influence it. For example, the particle beam may also be affected by thermal drift. For example, the particle beam may also be affected by (mechanical) vibrations of one or more components. For example, vibrations of the object, object mount, particle beam optical unit and / or particle beam deflection unit (e.g., column) and / or any vibration of the particle beam device may (unintentionally) affect the particle beam. Nevertheless, to enable the prescribed processing of the object, a marking deposited on the object may be used as a reference structure. During processing, the marking may be raster-scanned to determine or track its location. The particle beam may be calibrated based on this to ensure defined processing at a desired site on the object. For example, processing may include particle beam-induced etching and / or deposition, or image recording by the particle beam.

[0017] However, due to its geometric dimensions, markings deposited on an object can cause optical errors in the object during lithography. For example, the markings may be designed geometrically to locally interfere with the object's optical properties. As a result, the critical dimensions in the aerial image of the object (e.g., during lithography and / or inspection of the piece by inspection equipment) may be limited, for example, by the area of ​​the deposited markings.

[0018] For example, optical errors can occur when the dimensions of the marking are on the scale of the structural dimensions of the lithographic object. Therefore, to enable it to be used as a functional reference structure during drift correction (e.g., for contrast purposes when identifying the marking in an image), it may be necessary, for example, for the marking to have a specific minimum width and / or minimum height. Thus, the raster-scan of the marking and the determination of its location can be reliably guaranteed, for example. If the marking is on the scale of structural dimensions, it can exert optical effects during lithography. For example, the marking may have absorption and / or phase-shifting effects (such as structures on a mask), consequently causing optical errors. This effect becomes more significant as the structural dimensions of the lithographic object decrease.

[0019] For example, it is known that photolithography masks for a 32 nm process node can have structural dimensions (e.g., line width) of about 130 nm. The latter may be a known (drift-corrected) marking degree, and its dimensions may be, for example, between 50 and 100 nm. Therefore, marking in this example can cause unwanted effects. It is known to be a practice to remove these (annoying) markings without residue (e.g., through etching).

[0020] However, as lithography technology continues to evolve, this approach may not always be usable or always advantageous. First, the lithographic object may be over-etched (i.e., overprocessed) over a certain duration during the complete removal of the marking to ensure the complete removal of the marking material (e.g., without any residue). However, this may increase the risk of the object being attacked and / or damaged during the process.

[0021] Excessive etching may involve a procedure in which the object is exposed to the etched components, at least in the area of ​​the marking, for a relatively long period of time. For example, this may result in the complete removal of all marking material or (still) remaining only in trace amounts. Since excessive etching can also affect the material of the structure on the object, encroachment and / or damage to the object's structure cannot always be ruled out during the process. For previous relatively wide structural dimensions (e.g., greater than 130 nm) and optically less complex lithographic methods, such excessive etching does not always have a significant impact. For example, the structural material of such wide structures may be encroached upon as a result of excessive etching (e.g., slight initial etching of the mask structure). However, in terms of percentage, this may account for a relatively small proportion due to the wide structural dimensions, so the risk of causing optical errors in the area of ​​the marking on the object may be low.

[0022] However, as technology advances, the dimensions of imaging structures, for example, of lithography objects, can become much smaller, for example, less than 100 nm, less than 80 nm, less than 70 nm, and / or less than 60 nm. For example, this may be the case for EUV lithography objects (e.g., for absorption and / or phase-shifting masks for EUV lithography and / or for masks for high NA EUV lithography). For example, the structural width of EUV masks has reached about 60 nm, and future trends may aim for much finer (e.g., narrower) structural dimensions. Excessive etching marking on objects with smaller structural dimensions (e.g., less than 100 nm) can increase the risk that the structure on the object may be encroached upon and / or affected much more easily than a relatively larger structure. For example, in the case of such narrower structures, excessive etching can cause intrusion into the structural material (e.g., slight initial etching of the mask structure), which constitutes a larger proportion in terms of percentage due to the narrower structural dimensions. Therefore, there may be an increased risk of causing optical errors of the object in the marking area.

[0023] Furthermore, it should be noted that as lithographic methods become increasingly complex from an optical perspective, the requirements for the properties of lithographic object materials are becoming increasingly complex. For example, optical requirements regarding the absorption and / or phase-shifting characteristics of masks (or mask blanks) are becoming higher. Lithographic objects are designed, for instance, for increasingly complex optical exposures, such as oblique exposure (also known as oblique illumination), where specific phase-shifting characteristics of the object are required. For instance, increasingly complex lithographic methods also increase the requirements for the reliability of the actual and / or virtual refractive indices of the mask structure.

[0024] Excessive etching of the marking may indicate that the object is exposed to the etching components for a relatively long time, and it can be assumed that the complex optical properties of the lithographic object may be affected in an annoying way by this.

[0025] To meet complex characteristics, there is increasing discussion regarding the use of new materials or combinations of materials for lithographic objects (and their structures). For example, this means that adequately high etching selectivity for the removal of markings on the object material cannot always be guaranteed. Consequently, removing markings (e.g., by over-etching) can infringe upon the object structure and induce errors in a substantially amplified manner.

[0026] In addition, excessive etching during complete removal represents a time-consuming component, as the removal of the marking is completed only when it can be assumed, for example, that no residue of the marking (substantially) exists anymore. However, long or unnecessary processing durations are not advantageous when processing lithographic objects within the scope of mass production in the semiconductor industry. Instead, the procedure is typically designed to save time to enable, for example, high throughput, cost reduction, and / or simplification of technical complexity.

[0027] Therefore, known excessive etching and complete removal of markings do not always represent the optimal solution.

[0028] In contrast, the concept of the present invention is to reduce the volume of a deposited marking and to allow the marking to remain on the object after processing. Thus, the volume of the marking can be reduced without completely removing the marking. For example, the volume can be reduced to a level that can be evaluated using scanning electron microscopy post-processing. For example, the volume can be reduced to a level that is visible in a scanning electron microscopy image. In contrast, for example, if the marking is completely removed, the marking material can no longer be identified in a scanning electron microscopy image.

[0029] For example, a first embodiment therefore relates to a method for processing a lithographic object, the method comprising the step of processing a marking using a particle beam and an etching gas to reduce the volume of the marking—said that the marking is deposited on the object and remains on the object after processing. That is, the method may include the step of stopping the particle beam and the etching gas, thus ending the processing at a point where the marking is still present, so that the marking remains on the object after the processing is ended.

[0030] The approach of the present invention allows increasingly complex lithographic objects to be spared during the processing of object marking. For example, the marking can be processed according to the method of the first embodiment after its functional use (e.g., as a drift correction mark for a particle beam). The approach according to the present invention can reduce the processing time of the marking. Consequently, the lithographic object can avoid being exposed to the etching component for an unnecessarily long period of time.

[0031] Reducing processing time minimizes the risk of adverse effects on the structure and / or object material during removal. Consequently, interference effects on the optical properties of the object can be minimized. As described herein, technological advancements may result in increasingly smaller structural dimensions and / or more complex materials for lithographic objects. The method described herein takes these advancements into account and provides a more sparing processing procedure that minimizes the risk of damaging the optical properties of (increasingly complex) lithographic objects. According to the present invention, lithographic objects can therefore be processed with a lower risk than when the marking is completely removed.

[0032] Furthermore, reducing processing time can represent a significant time advantage within the scope of mass production. Therefore, any reduction in process time can be critical in the mass production of the semiconductor industry. As described herein, the method of the first embodiment may be implemented after the repair of an object (e.g., mask repair). Mask repair may typically be implemented in industrial mass production with relatively high throughput (e.g., in shift operations), as critical mask defects can occur regularly within semiconductor manufacturing (especially in the case of complex lithographic methods). Any time saved during the removal of markings can represent a significant advantage for the semiconductor plant (overall) (e.g., increased throughput and / or significant cost reduction).

[0033] In addition, materials can also be saved as a result of the present invention because less etching gas needs to be used. In particular, this can be based on the fact that there is no over-etching, but rather targeted initial etching of the marking with a relatively short duration (compared to over-etching). In industrial mass production, saving etching gas can constitute an important factor (overall) and can represent, for example, significant cost savings.

[0034] Therefore, the risks and / or disadvantages of the complete removal of the aforementioned markings can be reduced.

[0035] In one example, the volume of the processed marking can be reduced so that it does not deviate from the predetermined specifications during lithography.

[0036] One concept of the present invention may be interpreted as reducing the volume of the marking, for example, during lithography to the extent that the marking cannot technically produce adverse effects. A predetermined specification may be defined, for example, for an optical image of an object in a reference plane (e.g., an aerial image of a mask). For example, the predetermined specification may include a critical dimension in the optical image (e.g., the distance between characteristic lines in an aerial image of a mask as known in the industry). A predetermined specification may also be defined, for example, for a resist image, said resist image is generated through optical imaging of the object. For example, a substrate (e.g., a wafer) having a developable resist layer may be exposed to the object and developed. For example, the resist layer may be referred to in the industry as a wafer print. For example, the predetermined specification may include a critical dimension in the resist image (e.g., the distance between characteristic lines in a resist image of a mask as known in the industry). For example, the predetermined specifications can also be specified for the etching, and the etching can correspond, for example, to the etching of the resist image.

[0037] Figuratively speaking, the present invention can be interpreted as a marking being removed from the optical image of a lithographic object, but not physically removed from the object itself. Therefore, the marking is removed (only) optically, and as a result, the optical specifications of the object are not limited.

[0038] First, according to the present invention, it is therefore possible to manage the marking without unnecessarily long processing periods. At the same time, the method can be used in such a way that the marking no longer has a negative effect within the scope of the lithography.

[0039] However, the advantage of the present invention may also be accompanied by more extensive preparation means for the method according to the first embodiment. For example, the volume of marking to be reduced so as not to deviate from a predetermined specification can be substantially established. For example, field experiments using different processing times (e.g., different etching times) can be used to establish the marking processing time using a particle beam and etching gas, after which there is no deviation from the predetermined specification.

[0040] In one example, the volume of the marking may be reduced from a first volume to a second (predetermined target) volume. The first volume may correspond to the volume of the marking that the marking had before the method of the first embodiment was executed. Thus, the first volume may correspond to the volume of the marking that the marking had before the marking was processed by the particle beam and etching gas. For example, the volume may correspond to the original volume of the marking that the marking had after deposition. For example, the first volume of the marking may also deviate from the original volume of the marking. For example, the marking may be raster-scanned by a particle beam for a specific purpose after deposition, and it may be assumed that the original volume of the marking has changed as a result. For example, the marking may be raster-scanned for the purpose of processing an object (e.g., mask repair), where, compared to the original volume, the volume of the marking may have increased due to the deposition process or decreased due to the etching process.

[0041] The second volume may correspond to the volume of the marking after the method of the first embodiment. Therefore, the second volume is the volume of the marking after the marking is processed according to the first embodiment. Thus, the second volume is smaller than the first volume.

[0042] In one example, the marking may be processed in such a way that the marking has a target shape after processing, and the volume of the target shape is smaller than the volume of the marking before processing. For example, the marking may have an original shape before processing. This original shape may be converted into a target shape by processing the marking according to the first embodiment. For example, the target shape may be a predetermined intended shape. The predetermined intended shape may be a specific geometric shape defined, for example, by precise dimensions. For example, the target shape may be a conical shape (having specific radii at the top and bottom of the cone, for example, defined dimensions). Likewise, the target shape may be a cylindrical shape defined by appropriate dimensions and / or at least partially implemented elliptical shape. The processing may be implemented in such a way that the target shape falls within a specific range of predetermined dimensions of the selected geometric shape of the target shape. Thus, since manufacturing variations cannot typically be excluded, this approach ensures that the target shape is at least within predetermined specifications. For example, the target shape does not necessarily have to have a specific shape defined in advance. Rather, an essential characteristic of the target shape may be that it has a smaller volume than the original shape. Therefore, a simple inspection can determine whether the target shape has been reached by verifying whether the volume of the target shape is smaller than the volume of the original shape.

[0043] In one example, the volume of the marking can be reduced by at least 10%, (preferably) at least 30%, (more preferably) at least 50%, and (most preferably) at least 90%. It is also conceivable that the volume of the marking can be reduced by at least 95%.

[0044] In one example, at least 5%, (preferably) at least 10%, (more preferably) at least 20%, and (most preferably) at least 30% of the marking volume may remain. In one example, at least 40%, (preferably) at least 50%, (even more preferably) at least 70%, and (most preferably) at least 90% of the marking volume may further remain.

[0045] For example, the second volume of the marking may (essentially) comprise 10% of the first volume. For example, the second volume may (essentially) comprise 20% of the first volume. For example, the second volume may also (essentially) comprise 30%, 40%, and / or 50% of the first volume.

[0046] Accordingly, according to the present invention, a significant material residue of the marking may remain, and the marking does not correspond to a trace residue of the marking material. For example, this material residue can be detected through a scanning electron microscope.

[0047] In one example, the marking may be deposited on the imaging structure of the object. For example, the imaging structure may be a radiation-absorbing and / or phase-shifting lithography structure. For example, the imaging structure may include pattern elements of a mask. For example, the imaging structure may include a line shape structure of a specific width. For example, the imaging structure may include one or more layers. The marking may be applied, for example, to a (top) plateau of the imaging structure (e.g., the top layer of the imaging structure). For example, the imaging structure may exist in the form of a mesa, and the marking is deposited in the form of a mesa.

[0048] In one example, the marking can be applied directly to the imaging structure without requiring a layer (e.g., a sacrificial layer) to be applied between the marking and the imaging structure. As a result of the advantages within the range of reducing the volume of the marking as described herein, it is possible to manage, for example, without an easily removable sacrificial layer existing between the imaging structure and the marking. This represents an advantage because depositing a sacrificial layer on the imaging structure represents an additional procedural step that can be avoided using the approach described herein. Furthermore, since the reduction of the marking volume can be selected so as not to impair the optical properties of the lithography object, it is also possible to manage without the subsequent removal of the sacrificial layer (e.g., together with the marking).

[0049] According to the present invention, a particle beam and an etching gas can be directed toward a marking on an imaging structure to reduce the volume of the marking, and said marking remains on the imaging structure. In one example, the etching gas can be introduced locally, for example, around the marking (e.g., through a gas nozzle). In one example, a pixel raster can be placed over the marking, where one or more pixels can cover the marking. When processing the marking, a particle beam can be directed toward one or more pixels to perform the method described herein.

[0050] In one example, the imaging structure may be adjacent to the capping layer of the object. The capping layer may include, for example, ruthenium, or other materials. For example, the capping layer may include quartz. The area of ​​the object where the capping layer is exposed can be interpreted as, for example, a transparent area because exposure radiation is not absorbed at these sites. Therefore, if a marking is applied to the capping layer, the marking can be applied, for example, to the transparent area of ​​the object.

[0051] In one example, the marking can be applied directly to the capping layer of the mask without the need for a layer (e.g., a sacrificial layer) to be applied between the marking and the capping layer. As a result of the advantages within the range of reducing the marking volume as described herein, it is possible to manage, for example, without an easily removable sacrificial layer existing between the capping layer and the marking. This represents an advantage because depositing a sacrificial layer on the imaging structure represents an additional procedural step that can be avoided using the approach described herein. Furthermore, since the reduction of the marking volume can be selected so as not to impair the optical properties of the lithography object, it is also possible to manage without the subsequent removal of the sacrificial layer (e.g., together with the marking).

[0052] Areas of an object where the material of the imaging structure exists can be interpreted, for example, as opaque regions because exposure radiation is absorbed at these sites. For example, a marking can also be applied to the opaque regions (e.g., the imaging structure described herein). Thus, the imaging structure can be applied to the capping layer of the object.

[0053] In one example, the volume can be reduced such that the height of the processed marking associated with the imaging structure is smaller than the height of the imaging structure associated with the object. The height of the (processed) marking associated with the imaging structure can be defined, for example, as the height of the (processed) marking associated with the (upper) plateau of the imaging structure. The height of the imaging structure associated with the object can, for example, be the height of the imaging structure associated with a capping layer to which the imaging structure may be adjacent.

[0054] Accordingly, the height of the marking may be reduced according to the present invention. In one example, the height of the marking may be reduced from a first height to a second height (e.g., to a second predetermined target height). For example, the first height may correspond to the height of the marking that the marking had before the method of the first embodiment was executed. For example, the first height may correspond to the original height of the marking that the marking had after being deposited on the object. For example, the first height may also have a deviation from the original height (e.g., caused by the deposition and / or etching process when raster-scanning the marking as described herein).

[0055] The second height may correspond to the height of the marking that the marking has after the method of the first embodiment.

[0056] In one example, the marking may be processed such that the height of the processed marking (in relation to the imaging structure) is less than at least 10%, (preferably) at least 30%, (more preferably) at least 50%, and (most preferably) at least 90% of the height of the imaging structure (in relation to the object). In one example, the marking may be processed such that the height of the processed marking is less than at least 95% of the height of the imaging structure.

[0057] In one example, the marking can be processed such that the height of the processed marking (in relation to the imaging structure) corresponds to at least 5%, preferably at least 7%, more preferably at least 10%, and most preferably at least 12% of the height of the imaging structure (in relation to the object).

[0058] In one example, the volume is reduced in such a way that the second height of the marking corresponds to at least 5%, (preferably at least) 10%, (more preferably) at least 20%, and (most preferably) at least 40% of the first height of the marking. In one example, the volume is reduced in such a way that the second height corresponds to at least 50%, (preferably at least) 60%, (more preferably) at least 70%, and (most preferably) at least 90% of the first height.

[0059] For example, a reduction in height can be advantageous when a lithography object is used for oblique exposure. In this case, the object can be exposed by incident radiation that is oblique to, for example, the object plane. Thus, the incidence of radiation during exposure can be oblique to the capping layer of the object. Additionally, the radiation can be reflected by the object at a corresponding angle. For example, oblique exposure can be found in EUV lithography.

[0060] In light of this background, the critical height of the marking can cause shadowing during oblique exposure incidence. For example, shadowing can be projected beyond the imaging structure, for example, onto a capping layer. This can lead to optical errors. Similarly, the critical height of the marking can shadow radiation reflected obliquely by an object (as a result of oblique exposure). This mechanism can also cause optical errors (for example, deviations from predetermined specifications in lithography). According to the present invention, height reduction can also be implemented in relation to the absence of (substantial) optical errors generated during lithography, for example, even in the case of oblique exposure.

[0061] In one example, the imaging structure may include lateral dimensions (e.g., width) of 100 nm or less, (preferably) 80 nm or less, (more preferably) 60 nm or less, and (most preferably) 40 nm or less. In one example, the imaging structure may also include lateral dimensions (e.g., width) of 30 nm or less or 20 nm or less. For example, the width of the imaging structure may include a width between 10 nm and 100 nm. As described herein, the width of the imaging structure may include, for example, a lateral dimension of the imaging structure (e.g., a line width as known in the industrial sector). For example, the width may include the line width of a pattern element (e.g., an absorber structure). As mentioned, the lithography object may include an imaging structure having structural dimensions of less than 100 nm. For example, this may be the case for an EUV lithography object.

[0062] For such fine structures with dimensions of less than 100 nm, complete removal of markings (e.g., present on the structure) may not always be advantageous (as described herein). For example, an EUV lithography mask may include an imaging structure with a width of about 60 nm (e.g., less than or equal to 60 nm). By reducing the volume of the markings, the method according to the first embodiment can ensure that the interference effect of the markings on the lithography can be reliably corrected even for such objects. The risk of damaging structures with dimensions of less than 100 nm can be minimized in the process.

[0063] In one example, the lateral dimension (e.g., width) of the marking prior to processing may correspond to at least 50% of the lateral dimension (e.g., width) of the imaging structure. Thus, the dimension of the marking may, in this case, be approximately the dimension of the structure. In such an example, shadowing by the marking may occur during lithography, for example, in the case of vertical illumination or transmitted illumination of the object, and this shadowing may cause optical errors in the laterally effective area around the marking. Such optical appearance may also be minimized or corrected using the method described herein. It is also noted that lateral optical errors may occur in the case of oblique exposure of the object (e.g., preference for one direction). For example, the lateral dimension of the marking may include the lateral dimension of the marking at the interface with the surface on which the marking is deposited. For example, the lateral dimension of the marking may include the diameter of the marking. For example, the marking may have a circular or elliptical shape at the interface with the surface on which the marking is deposited. In this case, the lateral dimension of the marking may include, for example, the diameter of this circle or the diameter of the elliptical shape.

[0064] In one example, the lateral dimension of the marking may comprise at least 60%, (preferably) at least 70%, (more preferably) at least 80%, and (most preferably) at least 90% of the width (or lateral dimension) of the imaging structure.

[0065] In one example, the imaging structure may include a width of 70 nm or less, and the marking may include a width of at least 25 nm. In one example, the imaging structure may include a width of 60 nm or less, and the marking may include a width of at least 30 nm.

[0066] In one example, the volume of the marking may be reduced in such a way that the width of the marking is reduced. In one example, the width of the marking may be reduced from a first width to a second width. The first width of the marking may correspond to the width of the marking that the marking had before the method of the first embodiment is performed. For example, the first width may correspond to the original width of the marking that the marking had after deposition. For example, the first width may also have a deviation from the original width (for example, due to deposition and / or etching procedures when raster-scanning the marking as described herein). The second width may correspond to the width that the marking had after the method of the first embodiment. The second width may be smaller than the first width.

[0067] In one example, the marking may be deposited offset on the imaging structure. Thus, one side of the marking may be closer to one edge of the imaging structure than, for example, the other side of the marking. For example, it may be useful to process the width of the marking. For example, the marking may be processed on the side closer to the edge of the imaging structure. Thus, lateral effects on, for example, the corresponding side may be minimized (as described herein). However, it is also conceivable that the width of the marking be reduced homogeneously (i.e., uniformly). For example, in the case of the circular diameter of the marking, this may represent a reduction in the radius of the circular diameter.

[0068] In one example, the method also includes a processing site on an object processed by a particle beam. The processing may include, for example, repair of the object (e.g., repair of missing and / or excess material on a mask, and / or optical correction of the mask). In this case, at least one correction of the particle beam may be undertaken based at least partially on the location of the marking. The processing of the processing site may also include the provision of a gas (e.g., etching gas and / or deposition gas).

[0069] In one example, the method may further include the step of treating foreign matter on an object around a marking with a particle beam and an etching gas to reduce the volume of foreign matter. Thus, the concept of the invention also includes removing interfering material from around the marking. In one example, foreign matter may depend on the presence of the marking. For example, foreign matter may be generated around (and / or on) the marking during the deposition of the marking and / or raster-scan of the marking (e.g., as a reference structure).

[0070] As a result of its geometric dimensions, this foreign material may also cause optical errors of the object during lithography (as similarly described herein for marking). Therefore, the features and aspects of the method described herein for the treatment of marking may also be applied accordingly to the treatment of foreign material.

[0071] Therefore, in one example, the volume of foreign matter may be reduced, and the foreign matter may remain on the object.

[0072] The features described herein regarding the relative reduction of the volume of marking may accordingly apply to or be applied to the reduction of the volume of foreign matter. For example, within the scope of reducing the volume of foreign matter, a percentage reduction in the volume of marking as described herein may correspond to a percentage reduction in foreign matter.

[0073] In other examples, foreign matter can be removed from an object. For example, the foreign matter can be removed (substantially) without leaving any residue. For example, the foreign matter may have characteristics different from the marking material. For example, the foreign matter may be deposited parasitically (e.g., based on deterioration conditions that are actually unwanted but exist). Therefore, in order to eliminate optical errors caused by the foreign matter, it may be required to remove the foreign matter (substantially without leaving any residue). In such cases, for example, since the benefits of a mask without optical errors may outweigh these disadvantages, it is worth taking the risk of over-etching the foreign matter despite the potential disadvantages.

[0074] In one example, the periphery of a marking where foreign matter is present may be located within a radius of 1 µm or less from the marking (and / or within a radius of 10 µm or less and / or within a radius of 100 nm or less). However, since the periphery of a marking where foreign matter is present may also depend on the deposition of the marking and / or the processing when raster-scanning the marking, the periphery does not (necessarily) need to be limited to an absolute value.

[0075] In one example, the foreign material may include deposition material generated when the marking is deposited. For example, the deposition of the marking may involve particle beam-induced deposition. This may include, for example, electron beam-induced and / or ion beam-induced deposition. A situation that may occur in such deposition methods is additional accumulation or concentration at local sites as a result of the impact of the particle beam on the object (e.g., by reflection, diffraction, and / or secondary emission of particles, etc.). These local sites may be offset from the actual point of incidence of the particle beam. Deposition may likewise occur at these local sites due to the presence of particles. However, this may be undesirable from a technical perspective. Therefore, the conventional technical idea is that deposition material should be generated only at the point of incidence of the particle beam so that a geometric deposition shape can be created in a defined manner through the alignment of the particle beam. Accordingly, the effect described herein allows parasitic foreign matter to be deposited locally offset from the desired geometric deposition shape (e.g., in areas where the particle beam was not directed during deposition) and to be deposited in addition to the desired geometric deposition shape (e.g., in areas where the particle beam was directed during deposition).

[0076] According to the present invention, this foreign substance locally offset from the marking can be treated using one of the methods described herein.

[0077] In one example, the foreign material may include material around (and / or on) the marking. For example, the foreign material may be radially spaced from the marking. For example, the foreign material may exist around the marking in the form of a halo. The foreign material around the marking may not always have, for example, a defined shape or a defined thickness. For example, the foreign material may appear as a halo around the marking in a recording (e.g., a scanning electron microscope image). As described herein, the halo-shaped foreign material may have been generated parasitically as electrons accumulated around the marking, for example, during electron beam-induced deposition of the marking. For example, the halo-shaped foreign material may include material whose thickness decreases exponentially (e.g., radially starting from the marking). For example, this thickness profile may appear as a halo (e.g., around the marking) in a scanning electron microscope image.

[0078] It can also be considered that foreign substances are arranged in a ring-like shape and / or an elliptical shape around the marking, for example.

[0079] In one example, the foreign material may include deposited material generated during the repair of an object, preferably when the marking is raster-scanned within the scanning field. For example, the marking may be raster-scanned as a reference structure for particle beam drift correction within the scope of the object's processing (e.g., particle beam-guided repair of a bond).

[0080] In one example, the foreign material may be applied directly to the object without the need to apply a layer (e.g., a sacrificial layer) between the marking and the object. For example, the foreign material may be applied directly to the imaging structure and / or capping layer. As a result of the advantages within the range of reducing the volume of the marking as described herein, it is possible to manage, for example, without an easily removable sacrificial layer existing between the object and the marking. This represents an advantage because the deposition of a sacrificial layer on the lithographic object represents an additional procedural step that can be avoided by the approach described herein. Furthermore, since the reduction in the volume of the marking can be selected so as not to impair the optical properties of the lithographic object, it is also possible to manage without the subsequent removal of the sacrificial layer (e.g., together with the marking and the foreign material).

[0081] Therefore, it should be noted that the approach to reducing the volume of markings and / or foreign matter as described herein may make the additional integration of a sacrificial layer unnecessary during the processing of the object in certain cases (e.g., within the scope of mask repair).

[0082] As described herein, charging effects may occur while repairing and / or processing an object with a particle beam, which may result in the particle beam being unintentionally deflected (and not incident at the intended location). Therefore, the location of the marking is typically used as a reference structure to provide adaptation or correction of the particle beam based on the location of the marking. Correction can ensure that the particle beam is incident at a desired location (e.g., a desired processing and / or repair site on the object). For example, the location of the marking must be determined multiple times for the purpose of correcting the particle beam within the scope of the repair and / or processing.

[0083] In order to effectively use the marking as a reference structure in that process, it is possible to arrange a local scanning field around the marking, said scanning field being raster-scanned entirely by a particle beam for the purpose of determining the position of the marking. This is because, when the position of the marking is determined, that position may likewise drift (or change) due to the charge effect. By placing a scanning field of a defined size around the marking (initially), it is possible to handle the positional drift of the marking within the scanning field by the particle beam. For example, if the entire local scanning field is raster-scanned, it can be assumed that the particle beam must ultimately be incident on the marking for imaging purposes, even if the position of the marking drifts (within the scanning field). Thus, within the scope of processing the object, the particle beam can be driven to a desired processing site, for example, for particle beam-induced etching and / or deposition at the processing site. For drift correction, the particle beam can determine the location of the marking or the location of the marking by raster-scanning the scanning field around the marking in addition to the actual processing site.

[0084] In this context, what may occur is that the processing of the object involves particle beam-induced deposition using deposition gas at the processing site. For example, this could be mask repair, where the processing site may contain defects in the mask (e.g., defects where material is missing from the mask, e.g., defects in the mask transparency). Deposition gas may be provided at the object's processing site for particle beam-induced deposition. For example, the deposition gas may be introduced locally across the processing site, or it is also conceivable that the deposition gas be introduced globally across the object. Since the particle beam is directed toward the processing site, an appropriate deposition reaction can be induced through the deposition gas present there.

[0085] What may occur during such processing is that if deposition gas is provided to the processing site of the object, this deposition gas becomes present in the area of ​​the marking as well. Consequently, for example, the scanning field around the marking may also contain deposition gas. If the scanning field containing the marking is raster-scanned while processing the object for the purpose of correcting the particle beam, particle beam-induced deposition of foreign matter may consequently occur in the scanning field.

[0086] In this case, this foreign material may be present around (or on) the marking. For example, this foreign material may correspond (substantially) to the lateral dimensions of the scanning field. For example, this may be identifiable in a scanning electron microscope image; for example, it is possible to detect a rectangular foreign material in the process, and a drift correction marking is located within this rectangular foreign material.

[0087] According to the present invention, such foreign substances can also be reduced in terms of volume and / or completely removed from the object.

[0088] In one example, foreign matter may be present next to and / or on the imaging structure of the object. Accordingly, the concept of the present invention also includes removing interfering foreign matter from transparent and / or opaque regions on the object. Foreign matter next to and / or on the imaging structure of the object may originate, for example, from a scanning field around a marking.

[0089] In one example, marking can be applied to an imaging structure. For an imaging structure having relatively large structural dimensions (e.g., a width greater than 130 nm), for example, a scanning field (as described herein) can be designed to include only the region where the imaging structure material exists. Thus, if deposition occurs during a raster scan of the scanning field, the corresponding deposition material can exist only on the imaging structure. In this approach, since the deposition material exists only on the (e.g., radiation-absorbing) imaging structure, one assumption previously made in this context was that, consequently, any (significant) optical error cannot be induced.

[0090] However, (typically) the optimal determination of the marking location requires a specific minimum size of the scanning field. Therefore, as the dimensions of the imaging structure become increasingly smaller (e.g., less than 100 nm), it may occur that the scanning field includes not only the area covering the material of the imaging structure but also a second area covering the area adjacent to the imaging structure. Thus, the second area of ​​the scanning field may include a transparent area of ​​the object that does not contain the material of the imaging structure. When the scanning field is raster-scanned, foreign matter may be deposited in the second area during the process and, consequently, may be deposited directly in the transparent area of ​​the object (e.g., if a deposition gas is present in the scanning field as described herein). Thus, according to the method described herein, foreign matter parasitically generated adjacent to the imaging structure can be reduced and / or removed in terms of volume, for example, to avoid optical errors during lithography.

[0091] Furthermore, as the dimensions of imaging structures become increasingly smaller and / or the requirements for lithography objects become increasingly complex, it is no longer possible to ignore foreign substances on the imaging structures (e.g., generated when raster-scanning the scanning field). For example, these foreign substances can cause deviations from lithography specifications in the case of oblique exposure during lithography. Accordingly, according to the method described herein, foreign substances parasitically generated on the imaging structures can be reduced and / or removed in terms of volume, for example, to avoid optical errors during lithography.

[0092] In one example, the method may further include the step of selecting an etching gas, said etching gas is selected based at least partially on a provided deposition gas used to deposit a marking and / or foreign material on an object surrounding the marking. Thus, the etching gas for processing the marking and / or the foreign material may be based, for example, on the deposition material of the marking and / or foreign material. Thus, in one example, the method may include the step of selecting an etching gas, said etching gas is selected based at least partially on the material contained by the marking and / or foreign material.

[0093] As described herein, parasitic deposited foreign matter may be the result of a deposition gas present in the scanning field and used to process the object at the processing site (e.g., within the repair range of the defect of the object). Thus, the composition of the foreign matter may have a composition different from, for example, the composition of the marking material. However, features and / or embodiments as described herein for assigning etching gas to the deposition gas may accordingly apply in this case as well.

[0094] In one example, the marking is treated with a first etching gas, and the foreign substance is treated with a second etching gas, and the second etching gas is different from the first etching gas.

[0095] In one example, the method may preferably include the step of creating a marking on an object using a deposition gas and a particle beam provided for the purpose of repairing the object (e.g., repairing a mask). The deposition gas provided to create the marking may be stored, for example, in a storage unit and / or a database. Likewise, the deposition gas used to process at a processing site may be stored (similarly), for example, in a storage unit and / or a database.

[0096] The step of selecting an etching gas may include retrieving a deposit gas provided from a storage unit and / or a database. Subsequently, it is possible to determine the components and / or one or more compounds of the provided deposit gas. A corresponding etching gas may be selected based on the components and / or one or more compounds. For example, this may be implemented through a lookup table and / or a database. For example, one column of the lookup table may contain the components and / or one or more compounds of the deposit gas. Additional columns may contain possible related etching gases. A suitable etching gas for processing the marking may be selected via the lookup table based on the determination of the components and / or one or more compounds. Additionally, any desired database in which the association between the deposit gas (or deposit gas composition) and possible etching gases is stored may also be conceivable.

[0097] For example, the above method may also include (accordingly) automatically placing or storing the etching gas in a database and / or lookup table after the marking is deposited using, for example, a specific deposition gas.

[0098] This can enable an automated method of processing marking using an appropriate etching gas.

[0099] The etching gas may include a halogen in one example. For example, the etching gas may include at least one halogen atom.

[0100] In one example, the halogen (of the etching gas) may include chlorine if the deposition gas contains chromium. For example, the association between the chromium-containing deposition gas and the chlorine-containing etching gas may be stored in a database and / or lookup table.

[0101] For example, chromium-containing deposit gas may contain chromium hexacarbonyl (Cr(CO)6).

[0102] In one example, the halogen (of the etching gas) may contain chlorine (similarly) if the marking and / or foreign substance deposition material contains chromium.

[0103] In one example, the etching gas may also contain nitrogen and oxygen (where the deposition gas contains chromium). In one example, the etching gas may also contain nitrogen and oxygen (similarly) where the deposition material of the marking and / or foreign material contains chromium.

[0104] In one example, the etching gas may contain chlorine, nitrogen, and oxygen in a compound (where the deposition gas contains chromium), preferably nitrosil chloride (NOCl). For example, the association between the chromium-containing deposition gas and nitrosil chloride as the etching gas may be stored in a database and / or lookup table.

[0105] In one example, the etching gas may include (similarly) nitrosil chloride when the marking and / or foreign substance deposition material contains chromium.

[0106] In one example, when the deposition gas contains chromium and / or when the deposition gas contains silicon and oxygen and / or when the deposition gas contains molybdenum, the halogen may contain fluorine. For example, on the one hand, the association between the deposition gas containing silicon and oxygen and / or the deposition gas containing molybdenum, and on the other hand, the fluorine-containing etching gas, may be stored in a database and / or lookup table.

[0107] For example, the deposit gas containing silicon and oxygen may contain tetraethyl orthosilicate (TEOS).

[0108] For example, deposited gas containing molybdenum may contain molybdenum hexacarbonyl (Mo(CO)6).

[0109] In one example, the halogen (of the etching gas) may contain fluorine (similarly) if the marking and / or foreign substance deposition material contains chromium.

[0110] In one example, the halogen (of the etching gas) may contain fluorine (similarly) when the marking and / or foreign substance deposition material contains silicon and oxygen. In one example, the halogen (of the etching gas) may contain fluorine (similarly) when the marking and / or foreign substance deposition material contains molybdenum.

[0111] In one example, the etching gas may further include xenon (where the deposition gas contains chromium and / or the deposition gas contains silicon and oxygen and / or the deposition gas contains molybdenum). In one example, the etching gas may further include xenon (similarly) where the deposition material of the marking and / or foreign material contains chromium. In one example, the etching gas may further include xenon (similarly) where the deposition material of the marking and / or foreign material contains silicon and oxygen. In one example, the etching gas may further include xenon (similarly) where the deposition material of the marking and / or foreign material contains molybdenum.

[0112] In one example, the etching gas may include fluorine and xenon in a compound (where the deposition gas contains chromium and / or the deposition gas contains silicon and oxygen and / or the deposition gas contains molybdenum), preferably xenon difluoride (XeF2). For example, the fact that a deposition gas containing silicon and oxygen (e.g., tetraethyl orthosilicate) is associated with xenon difluoride as an etching gas may be stored in a database and / or lookup table.

[0113] For example, the fact that a chromium-containing deposition gas (e.g., chromium hexacarbonyl) is associated with xenon difluoride as an etching gas can be stored in a database and / or lookup table.

[0114] For example, the fact that a deposit gas containing molybdenum (e.g., molybdenum hexacarbonyl) is associated with xenon difluoride as an etching gas can be stored in a database and / or lookup table.

[0115] In one example, the etching gas may include xenon difluoride (similarly) when the marking and / or foreign substance deposition material contains chromium.

[0116] In one example, the etching gas may include xenon difluoride (similarly) when the marking and / or foreign substance deposition material contains silicon and oxygen.

[0117] In one example, the etching gas may include xenon difluoride (similarly) when the marking and / or foreign substance deposition material contains molybdenum.

[0118] In one example, if the deposition gas contains molybdenum, the etching gas may contain oxygen. In this example, the etching gas does not necessarily have to contain, for example, a halogen. In one example, if the deposition material of the marking and / or foreign material contains molybdenum, the etching gas may (similarly) contain oxygen. Within the scope of the above method, molybdenum-containing markings and / or molybdenum-containing foreign material may also be etched using an oxygen-containing gas, and the oxygen-containing gas does not necessarily have to contain a halogen.

[0119] In one example, the (oxygen-containing) etching gas may contain water (where the deposition gas contains molybdenum). For example, the etching gas may contain (similarly) water when the deposition material of the marking and / or foreign material contains molybdenum. Within the scope of the method, molybdenum-containing marking and / or molybdenum-containing foreign material may also be etched using water as the etching gas, and the etching gas does not necessarily need to contain a halogen.

[0120] In one example, markings and / or foreign substances may be further treated using an additive gas containing oxygen. For example, the additive gas may be added to the etching gas as an oxidizing component.

[0121] In one example, the additive gas may include water and / or nitrogen dioxide.

[0122] In one example, the etching gas may include nitrosil chloride, and the additive gas may include water if the marking and / or foreign substance deposition material contains chromium.

[0123] In one example, the etching gas may include xenon difluoride, and the additive gas may include water and nitrogen dioxide when the marking and / or foreign substance deposition material contains chromium.

[0124] In one example, the etching gas may include xenon difluoride, and the additive gas may include water when the marking and / or foreign substance deposition material includes tetraethyl orthosilicate.

[0125] In one example, the etching gas may include xenon difluoride, and the additive gas may include water when the marking and / or foreign substance deposition material includes silicon oxide.

[0126] In one example, the etching gas may include xenon difluoride, and where the marking and / or foreign substance deposition material includes tetraethyl orthosilicate and / or silicon oxide, it is possible to manage without an additive gas.

[0127] In one example, the etching gas may include xenon difluoride, and the additive gas may include water when the marking and / or foreign substance deposition material contains molybdenum.

[0128] In one example, the etching gas may contain water, and where the marking and / or foreign substance deposition material contains molybdenum, it is possible to manage without additive gas.

[0129] A second embodiment relates to treating foreign matter (as described herein) on an object around a marking by means of a particle beam and an etching gas for the purpose of reducing the volume of foreign matter. Features and embodiments for treating foreign matter as described herein (e.g., in relation to the method of the first embodiment) may be applicable or applied to the method according to the second embodiment accordingly. In the method according to the second embodiment, the foreign matter (as described herein) may be treated separately, for example, without a notable marking to be treated. Additional features and / or embodiments of the first method may likewise be applied to the method of the second embodiment accordingly. For example, the method of the second embodiment may also include the step of treating a treatment site of the object by means of a particle beam. For example, said treatment may include object repair (e.g., repair of missing material and / or excess material on a mask, and / or optical correction of the mask). Additionally, the method of the second embodiment may include the step of creating a marking on an object using a deposition gas and particle beam provided for the purpose of repairing the object (e.g., repairing a mask).

[0130] A third embodiment relates to a method according to a second embodiment, wherein the foreign material comprises (only) a halo-shaped foreign material around a marking (as described herein). According to the method of the third embodiment, it is therefore possible to reduce the volume of the halo around the marking or to remove the halo (substantially without residue), and additional foreign material treatment is not necessarily required. For example, it may be useful to reduce only the volume of the halo within the scope of mask repair and / or to remove the halo in a separate step. For example, the deposited material of the halo may have a different geometric shape and / or composition than the deposited material of the marking, and as a result, it is not always advantageous to process the halo and the marking in a single related procedural step.

[0131] A fourth embodiment relates to a method according to a second embodiment, wherein foreign matter comprises deposited material generated (only) when raster-scanning a marking in a scanning field, preferably during the repair of an object (as described herein). Accordingly, according to the method of the fourth embodiment, it is possible to reduce the volume of the deposited material generated in the scanning field or to remove said deposited material (substantially without residue), and additional foreign matter processing is not necessarily required. For example, it may be useful to reduce only the volume of foreign matter within the scanning field within the scope of mask repair and / or to remove the foreign matter in a separate step. For example, the deposited material in the scanning field may have a different geometric shape and / or composition than the deposited material of the marking (and / or halo). Therefore, it may not always be advantageous to process the deposited material of the scanning field and the marking in a single related procedural step.

[0132] A fifth embodiment relates to a method according to a second embodiment, wherein foreign matter (only) comprises foreign matter in the form of a halo around a marking (as described herein), wherein the foreign matter comprises deposited material generated when raster-scanning the marking within the scanning field, preferably during the repair of the object (as described herein). For example, it may be useful to reduce only the volume of foreign matter and the halo within the scanning field within the scope of mask repair and / or to remove them in a separate step. Processing the scanning field, the halo, and the deposited material of the marking in one related procedural step may not always be advantageous due to the different geometric shapes and / or compositions of these materials.

[0133] A sixth embodiment relates to a method for treating a lithographic object, comprising the step of treating foreign matter on an object surrounding a deposition material by means of a particle beam and an etching gas for the purpose of reducing the volume of foreign matter. For example, the deposition material may include any desired (e.g., locally separated) deposition material. For example, this deposition material may have been deposited in a particle beam-guided manner. Accordingly, the concept of the present invention may also include removing interfering foreign matter from around any desired deposition material in a particle beam-guided manner. Accordingly, the present invention is not necessarily limited to removing foreign matter from around a deposited marking. Features of other embodiments of the present invention described herein may accordingly correspond to or apply to the method of the sixth embodiment. For example, foreign matter may be (substantially) completely removed from the object (e.g., substantially removed without residue) according to the method of the sixth embodiment. For example, the volume of foreign matter may be reduced according to the method of the sixth embodiment, and said foreign matter remains on the object.

[0134] For example, foreign material processed using the method of the sixth embodiment (as similarly described for other embodiments) may depend on the presence of sedimentary material (e.g., locally separated). For example, foreign material may be generated around (and / or on) the sedimentary material within the range of particle beam-induced deposition of (e.g., locally separated) sedimentary material.

[0135] For example, the foreign material may include a halo existing around the sedimentary material (e.g., locally separated) (as similarly described herein with respect to the halo of the reference marking).

[0136] For example, the deposition material of the sixth embodiment (e.g., locally separated) may include a repair material used to repair a lithographic object. For example, a halo may have formed around the repair material during particle beam-induced deposition of the repair material (as similarly described herein for a halo around a marking). This halo of the repair material may indicate a foreign material with reduced volume using the method of the sixth embodiment.

[0137] For example, the repair material of the sixth embodiment may be deposited for the purpose of repairing opaque defects of a lithographic object. For example, the repair material of the sixth embodiment may be deposited for the purpose of repairing any other desired defect of a mask object.

[0138] In one example, the particle beam mentioned herein may include an electron beam and / or an ion beam.

[0139] A seventh aspect relates to a computer program having instructions for performing a method according to any aspect described herein when the instructions are executed. For example, the computer program may include instructions that, when executed by a computer, can prompt a computer and / or device to perform a method according to any aspect described herein.

[0140] The features of the methods described herein may be incorporated into a computer program accordingly. Accordingly, the features (and examples) of the methods mentioned herein (first to fifth embodiments) may also be applicable to or applied to the aforementioned computer program accordingly.

[0141] An additional aspect relates to a memory containing a computer program of the sixth aspect.

[0142] The eighth embodiment relates to a device for processing a lithographic object, the device comprising: means for processing a marking deposited on an object with an etching gas and a particle beam used in a process that reduces the volume of the marking so that the marking remains on the object; and a computer unit that enables the device to perform a method according to any embodiment described herein, at least in part, based on the execution of a computer program of the fifth embodiment.

[0143] In one example, the device includes memory containing a computer program according to any embodiment described herein. In this example, the computer unit may be able to execute the computer program. For example, the computer program may be installed in the computer unit and thus installed (physically / tangibly) in the device.

[0144] For example, the computer unit may include a computer, a computing unit, a microprocessor, etc. For example, the computer unit is communically coupled with the components of the device, so that a signal output by the computer unit can cause a change in the components of the device.

[0145] When the computer program is executed, the computer program may output a command to the device, for example, to reduce the marking volume (as described herein). In the same way, when the computer program is executed, it may select an etching gas, for example, based on the deposition gas (as described herein).

[0146] For example, the device may be configured to receive a value from the user based on the volume of the marking being automatically reduced to a predetermined value or to a predetermined value.

[0147] In one example, it is also possible for a computer program to be stored elsewhere (e.g., in the cloud) and for a device to have means for receiving commands generated by executing the program elsewhere. Accordingly, in this case, the computer program may be executed externally (e.g., on an external computer unit, server unit, etc.), and the commands of the computer program are transmitted to the receiving means of the device. The means for receiving commands may be communicatively coupled, for example, with the computer unit of the device. For example, the receiving means may include a receiver unit configured to receive and / or process commands via a wireless and / or wired connection.

[0148] For example, the synergy between a computer program and a corresponding device can allow the method to be executed within the device in an automated or autonomous manner. Consequently, it is also possible to minimize, for instance, operator intervention, and thus to minimize both cost and complexity when processing (lithographic) objects.

[0149] In principle, it should be noted that the features (and examples) of the methods mentioned herein may, accordingly, be applicable to or applied to the devices mentioned herein. The features (and also examples) of the devices specified herein may, accordingly, be applicable to or applied to the methods described herein.

[0150] The ninth aspect relates to a lithographic object processed using a method according to any of the methods described herein.

[0151] A tenth aspect relates to a method for processing a semiconductor-based wafer, the method comprising the step of lithographically transferring a pattern associated with a lithographic object onto a wafer, wherein the object is processed using the method of the aspects described herein. The lithographic transfer may include a lithographic method in which the object is designed (e.g., EUV lithography, DUV lithography, i-line lithography, etc.). For example, the method of this aspect may include providing a beam source of electromagnetic radiation (e.g., EUV radiation, DUV radiation, i-line radiation, etc.). This may additionally include providing a developable resist layer on the wafer. The lithographic transfer may also be based at least partially on the beam source and the provision of a developable resist layer. For example, it is possible to image the pattern onto the resist layer (in a converted form) by radiation from the beam source. Brief explanation of the drawing

[0152] The technical background information and exemplary embodiments of the present invention are described in the following detailed description with reference to the drawings. FIG. 1 shows a scanning electron microscope image of a mask defect and a reference marking in the left partial image, said reference marking is used when processing defects for the purpose of correcting the particle beam. The right partial image illustrates the complete removal of the reference marking according to the prior art. FIG. 2 schematically illustrates a plan view of an exemplary reference marking on an imaging structure that can be processed using the method according to the present invention. FIG. 3 schematically illustrates a side view of an exemplary reference marking from FIG. 2 that can be processed using the method according to the present invention. FIG. 4 schematically illustrates a side view of the reference marking volume reduction according to the method according to the present invention. FIG. 5 schematically illustrates a plan view of a scanning field used to determine the position of a reference marking for the purpose of correcting a particle beam. FIG. 6 schematically shows a plan view of a foreign substance that is generated when a scanning field is raster-scanned and can be processed according to the method according to the present invention. FIG. 7 schematically shows a side view of a foreign substance that is generated when a scanning field is raster-scanned and can be processed according to the method according to the present invention. FIG. 8 schematically shows a plan view of a foreign substance that can be processed according to the method according to the present invention and the shape of a halo existing around a marking. FIG. 9 schematically shows a side view of a foreign substance that can be processed according to the method according to the present invention, and the shape of a halo existing around a marking. FIG. 10 schematically illustrates an exemplary device according to the present invention. Specific details for implementing the invention

[0153] FIG. 1 shows a scanning electron microscope image of a lithography mask defect (D) and reference markings (M1, M2, M3, M4) in the left portion of the image, said reference markings are used when processing the defect (D) for the purpose of correcting the particle beam. In this context, FIG. 1 illustrates a procedure according to the prior art.

[0154] In FIG. 1, the defect (D) corresponds to excess mask material. For example, imaging structural material is present in the region of the defect (D) even though it should not be present according to the mask design. Therefore, the defect (D) may represent an opaque defect because the defect region acts in a beam-absorbing and / or phase-shifting manner. However, according to the mask design, the defect region should represent a transparent region where targeted absorption of radiation is not expected.

[0155] For example, the defect (D) can be treated using a known repair method. For example, the defect (D) can be treated using an electron beam-induced etching process, thereby etching away excess material of the defect (D).

[0156] It should be noted that the defect (D) in Fig. 1 is merely an exemplary defect. There may also be mask defects where the mask material is missing. For example, the material may be missing from the imaging structure of the mask. For example, such defects may exhibit transparent defects because the defect region does not have radiation-absorbing and / or phase-shifting effects.

[0157] However, according to the mask design, these defective regions must represent opaque areas where targeted absorption (or phase shift) of radiation is expected. For example, transparent defects can be repaired through electron beam-induced deposition in the defective region.

[0158] Typically, a repair geometry comprising, for example, a pixel grid may be used for defect treatment. The repair geometry may include a defect (e.g., a region of defect), and an electron beam is directed toward a pixel within the pixel grid to cause, for example, electron beam-induced deposition and / or etching. For defect repair, the defect may be exposed to a suitable deposition gas and / or etching gas.

[0159] As described herein, particle beam-guided repair may require the particle beam (e.g., electron beam) to be corrected by a reference marking. For example, this may include drift correction for the particle beam based on the determination of the reference marking location while the defect is being processed.

[0160] Four reference markings (M1, M2, M3, M4) are arranged around the defect (D) in the left portion image of FIG. 1. For example, the reference markings (M1, M2, M3, M4) may have been deposited on the mask before the defect (D) was repaired.

[0161] The central part of the image in FIG. 1 shows an enlarged view of the first reference marking (M1) among the four reference markings (M1, M2, M3, M4). In this example, the first reference marking (M1) is applied to the imaging structure (L). A transparent region is located next to the imaging structure (L), where the capping layer (C) of the mask in the transparent region is identifiable in the scanning electron microscope image through different contrasts.

[0162] As described herein, reference markings (M1, M2, M3, M4) can cause optical errors during the lithographic method for the mask. For example, deviations in the optical image may occur when the mask is exposed to the area of ​​the reference markings (M1, M2, M3, M4). For example, the reference markings may lead to infringement of specifications in the aerial image of the mask.

[0163] Prior art discloses the complete removal of reference markings (e.g., through etching and / or wet chemical cleaning).

[0164] For example, the right-hand portion image of FIG. 1 illustrates the result of the complete removal of a first reference marking (M1) according to the prior art. It is possible to identify that the material of the first reference marking (M1) has been removed (substantially) without residue. This can be seen from the fact that no material of the first reference marking (M1) can be identified in the scanning electron microscope image of the right-hand portion image of FIG. 1.

[0165] As described herein, as the dimensions of mask structures (e.g., imaging structures) become increasingly smaller and / or the requirements for mask materials become increasingly complex, the complete removal of reference markings may not always be optimal. For example, as the size of the imaging structure on the mask decreases, the dimensions of the reference markings become closer to the dimensions of the imaging structure. However, from a technical perspective, a specific minimum dimension of the reference marking may be required to reliably determine the location of the reference marking for particle beam correction. Therefore, as described herein, the complete removal of reference markings may not always be suitable for all masks and / or reference markings.

[0166] However, if left untreated, the reference marking can lead to optical errors during lithography. For example, if the structure width of the mask structure is at the level of the reference marking (e.g., for a structure width of less than 60 nm), shadowing effects may occur, for example in the case of vertical exposure or transmitted illumination, because there is a (optical) lateral projection over the structure. For example, this may be the case for masks for UV lithography and / or DUV lithography.

[0167] As the structure width becomes increasingly smaller (e.g., structure width of less than 60 nm), a shadowing effect may occur due to the vertical range of the reference marking, for example, in the case of oblique exposure. In this case, for example, radiation incident on the mask and / or radiation reflected by the mask may be shadowed. In this context, it should be noted that as the dimensions of the mask structure become even smaller (as a result of the required minimum dimensions), the reference marking may become twice the height of the imaging structure (e.g., mask absorber). Therefore, the reference marking may cause a relatively distinct shadowing effect in the case of oblique exposure. For example, oblique exposure of the mask may occur within the scope of EUV lithography. Accordingly, the present invention also relates to an EUV mask for, for example, EUV lithography.

[0168] In the plan view, FIG. 2 schematically illustrates an exemplary reference marking on an imaging structure that can be processed using the method according to the present invention. It is possible to identify a reference marking (M) deposited on the imaging structure (L). Two additional exemplary imaging structures of a mask are drawn next to the imaging structure (L).

[0169] A reference marking (M) may have a reference marking width (BM). An imaging structure (L) may have a structure width (BL). As mentioned herein, the structure width (BL) of the imaging structure may become progressively smaller, whereas from a technical perspective, a minimum width for the reference marking width (BM) may still be required. This situation is illustrated in FIG. 2 as an example. Thus, it is possible to identify that the reference marking width (BM) occupies more than 50% of the structure width (BL).

[0170] For example, the reference marking width (BM) may include a width of at least 20 nm, at least 30 nm, or at least 50 nm in this case. For example, the reference marking width may be between 20 nm and 100 nm.

[0171] In this case, the structural width (BL) of the imaging structure (L) on which the reference marking (M) is deposited may include, for example, a width of 100 nm or less, 70 nm or less, 60 nm or less, 40 nm or less, and / or 30 nm or less.

[0172] For example, the structure width (BL) may be about 100 nm, while the reference marking width (BM) may be 50 nm. For example, the structure width (BL) may be about 60 nm, while the reference marking width (BM) may be in the range between 30 nm and 40 nm.

[0173] FIG. 3 schematically illustrates a side view of an exemplary reference marking from FIG. 2 that can be processed using the method according to the present invention. A simplified side view through a mask (O) is shown. This representation is primarily intended to schematically illustrate the dimensions of the imaging structure (L) and the dimensions of the reference marking (M).

[0174] Accordingly, the imaging structure (L) may have a structure height (HL). The structure height (HL) may be defined in relation to the capping layer of the adjacent mask (O) by the imaging structure (L) (as schematically illustrated in FIG. 3). For example, the structure height (HL) may include heights of 100 nm or less, 80 nm or less, 50 nm or less, and 30 nm or less. The structure width (BL) of the reference marking (as already described in FIG. 2) is also plotted in FIG. 3.

[0175] In the plan view, the reference marking (M) may have a substantially circular shape, for example (as shown in FIG. 2). In one example, the reference marking (M) may have an elliptical shape in the plan view, for example.

[0176] Additionally, a reference marking (M) deposited on the imaging structure (L) is identifiable in FIG. 3. It is clearly shown from the side view that the reference marking may have a reference marking height (HM). The reference marking height (HM) can be defined in relation to the plateau of the imaging structure on which the reference marking is deposited (as clearly explained in FIG. 3). For example, the reference marking height (HM) may include heights of 200 nm or less, 100 nm or less, 80 nm or less, 70 nm or less, and 40 nm or less. The reference marking height (HM) may also include heights of, for example, 10 nm or less or 30 nm or less. Thus, it should be noted that the reference marking height (HM) may have a height between, for example, 10 nm and 200 nm.

[0177] In the side view, the reference marking (M) may have a conical cross-section, for example (as shown in FIG. 3). However, in the side view, the reference marking (M) may also have a cross-section having a cylindrical shape and / or at least partially implemented elliptical shape. The width of the reference marking at its tip may be smaller than the width of the reference marking at the plateau of the imaging structure (L) (as clearly shown in FIG. 3). The width of the marking (as described herein) or the reference marking width (BM) may refer to the maximum width of the reference marking. It is also conceivable that the reference marking width (BM) corresponds to the width of the reference marking known from the plan view of the scanning electron microscope image.

[0178] It should be noted that the reference marking (M) may also have a cylindrical and / or rectangular shape. Additionally, any other desired shape may be considered.

[0179] As described herein, when the structural dimensions of the mask (e.g., structural width (BL) and / or structural height (HL)) are approximately the dimensions of the reference marking (M) (e.g., reference marking width (BM) and / or reference marking height), complete removal of the reference marking (M) may not always be optimal.

[0180] FIG. 4 schematically illustrates a side view of the volume reduction of a reference marking (M) according to the method according to the present invention. The first reference marking height (HM1) of the reference marking can be identified in the left partial image. Additionally, the first reference marking width (BM1) of the reference marking can also be identified in the left partial image. Generally, the reference marking may include a first volume in the left partial image. For example, the first volume may correspond to the volume of the reference marking that the reference marking had after mask defect repair (or immediately after the deposition of the reference marking). Subsequently, the first volume may be reduced according to the method described herein. The result of the volume reduction is illustrated in the right partial image of FIG. 4.

[0181] For example, it is possible to identify that the height of the reference marking (M) has been reduced. After volume reduction, the reference marking has a second reference marking height (HM2) that is smaller than the first reference marking height. As a result, optical errors that occur when exposing the mask can be avoided. For example, since the shadowing effect during oblique exposure can be avoided due to the reduction in height, optical errors can be avoided, particularly within the oblique exposure range of the mask.

[0182] Likewise, it can be identified that, for example, there has been a reduction in the width of the reference marking (M). After the volume reduction, the reference marking has a second reference marking width (BM2) that is smaller than the first reference marking width. As a result, optical errors that occur when exposing the mask can be avoided. For example, lateral optical errors that may occur, particularly due to an overly wide reference marking, can be avoided.

[0183] For example, the example of FIG. 4 can be managed without a sacrificial layer between the marking (M) and the imaging structure (L). Thus, there exists a known approach that incorporates a sacrificial layer between the marking (M) and the imaging structure (L) to facilitate the subsequent removal of the marking along with the sacrificial layer. However, this requires additional procedural steps in which the sacrificial layer is deposited first, the marking is deposited thereafter, and ultimately the sacrificial layer is removed along with the marking. For example, it is possible to manage using the approach described herein without such relatively complex procedural integration.

[0184] For example, volume can be reduced through electron beam-induced etching using an etching gas. One can consider the electron beam being statically directed toward a reference marking. In another example, the electron beam can be dynamically directed toward the reference marking within a range of temporal interaction (for example, the electron beam can be directed toward two or more sites of the reference marking (M) when the volume is reduced).

[0185] In addition, it can also be considered that the volume reduction includes only a reduction in the height of the reference marking. For example, the volume reduction may include only a reduction in the width of the reference marking. In an additional example, the volume reduction for the reference marking may include a first step of height reduction and a second step of width reduction.

[0186] An exemplary workflow of the method according to the present invention is to be described once again below. Initially, the method may include detecting defects on a mask. Subsequently, one or more reference markings may be deposited, which may be used to repair defects (e.g., for correction of an electron beam). Subsequently, defects may be repaired. This may include electron beam-induced etching and / or electron beam-induced deposition in the defect region. Subsequently, the volume of the reference markings may be reduced as described herein.

[0187] As described herein, the method is not limited to a reduction in the volume of the reference marking, but may also include the treatment of foreign substances around the reference marking.

[0188] In this regard, FIG. 5 schematically illustrates a plan view of a scanning field (S) that can be used to determine the location of a reference marking (M) for the purpose of correcting a particle beam. It is possible to identify that the scanning field (S) is positioned around the reference marking (M). In this context, the entire scanning field (S) can be raster-scanned for the purpose of determining the location of the reference marking (M). The scanning field (S) allows the positional drift of the reference marking (M) within the scanning field (S) to be addressed, and said positional drift may be induced when the mask is processed by the electron beam. However, a minimum size of the scanning field (S) may be required to address the positional drift of the reference marking (M). For example, if the scanning field is too small, it may increase the risk that the electron beam will not reach the reference marking (M) due to electron beam drift. Consequently, it will be impossible to determine the location of the reference marking (M) (and perform the accompanying drift correction).

[0189] Accordingly, as the dimensions of the mask structure become smaller (e.g., as the structural width (BL) of the imaging structure (L) becomes smaller), the scanning field (S) can be projected beyond the width of the mask structure. This is illustrated through the example of FIG. 5. For example, the scanning field (S) may include a first scanning field region (S1). In FIG. 5, the first scanning field region (S1) includes an area where the material of the imaging structure (L) is located. The scanning field (S) may further include, for example, a second scanning field region (S2). The second scanning field region (S2) is projected beyond the imaging structure (L). In FIG. 5, the second scanning field region (S2) includes an area where the material of the imaging structure (L) is not located. For example, the second scanning field region (S2) may include an area covering the capping layer of the mask. Accordingly, the second scanning field region (S2) may correspond to a transparent area of ​​the mask where there should be no radiation absorption according to the mask design. However, as mentioned, deposited gas may be present in the scanning field (S). Consequently, when the scanning field (S) is raster-scanned by an electron beam, (unintended) electron beam-induced deposition from the deposited gas may occur.

[0190] As described herein, this may be a case where the correction mark location is determined within the range of electron beam-induced deposition. For example, a mask defect may be repaired via electron beam-induced deposition using at least one deposition gas. Conventionally, the scanning field (S) of the reference marking (M) is raster-scanned multiple times for the purpose of correcting electron beam drift. For example, the deposition gas for repairing the defect may also reach the site of the scanning field (e.g., via diffusion). This may also occur when the deposition gas is provided only locally across the defect. For example, since the reference marking (M) is placed as close as possible to the defect, the deposition gas typically has a relatively short diffusion path from the defect to the reference marking. Furthermore, it may occur that, from a technical perspective, the deposition gas cannot be confined to the defect, so in principle, the reference marking may be exposed to the deposition gas.

[0191] In this regard, FIG. 6 schematically illustrates a plan view of foreign matter (F) that is generated when a scanning field (S) is raster-scanned and can be processed according to the method according to the present invention. It is clearly shown that the deposited foreign matter is located in the entire scanning field (S). Additionally, it is identifiable that the foreign matter (F) is present in both the first scanning field area (S1) and the second scanning field area (S2). The foreign matter (F) is deposited on the imaging structure (L) in the first scanning field area (S1) and is deposited next to the imaging structure (L) (e.g., on the capping layer of the mask) in the second scanning field area (S2).

[0192] FIG. 7 schematically shows the foreign substance (F) of FIG. 6 in a side view. It is clearly shown in the side view that the foreign substance (F) is first deposited on the reference marking (M). Additionally, the foreign substance may exist on the plateau of the imaging structure (L) and on the side wall of the imaging structure (L). It is also identifiable that the foreign substance (F) is located next to the imaging structure (L) (e.g., on the capping layer of the mask). In particular, the foreign substance (F) next to the imaging structure (L) (in the second scanning field area (S2)) can cause problems in lithography using the mask. This is because this area represents a transparent region where there should be no radiation absorption (and / or phase shift) according to the mask design. Therefore, the foreign substance (F) in this area can cause optical errors.

[0193] However, it can also be considered that foreign material (F) causes optical errors on the imaging structure (L). For example, this is because the foreign material (F) extends to the edge (and / or sidewall) of the imaging structure (as described in FIG. 7). For example, the foreign material (F) can have a lateral effect on the imaging structure, which can result in lateral optical errors, for example.

[0194] Accordingly, according to the present invention, foreign substances (F) in the scanning field (S) can be reduced and / or completely removed in terms of volume.

[0195] In another example, it can also be considered that only foreign matter (F) generated by the scanning field (e.g., only in the second scanning field area (S2)) is removed from the side of the imaging structure.

[0196] In an additional example, it can also be conceived that only foreign matter (F) next to the imaging structure (L) (e.g., foreign matter (F) in the second scanning field area (S2)) is removed in the first step. Foreign matter (F) on the imaging structure (L) and / or reference marking (M) (e.g., foreign matter (F) in the first scanning field area (S1)) may be removed in the second step.

[0197] In one example of the above method, only foreign substances present in the scanning field (S) can be reduced and / or completely removed in terms of volume.

[0198] In another example of the method, the reference marking (M) and foreign matter (F) in the scanning field (S) can be reduced in terms of volume, and as a result, the reference marking (M) and foreign matter (F) remain on the mask.

[0199] In another example of the method, the reference marking (M) can be reduced in terms of volume, and as a result, the reference marking may remain, whereby foreign matter (F) in the scanning field (S) is completely removed from the mask (substantially without residue).

[0200] FIG. 8 schematically illustrates a plan view of a foreign substance that can be processed according to the method according to the present invention, in the form of a halo (H) existing around a reference marking (M). As described herein, the halo (H) may have been generated during electron beam-induced deposition of the reference marking (M). For example, electrons may be locally concentrated around the reference marking during the process (e.g., as a result of scattered electrons). Thus, an electron beam-induced deposition reaction may likewise occur around the marking, which may result in the formation of the halo (H).

[0201] FIG. 9 schematically shows a side view of the halo (H) of FIG. 8. It is clearly shown that the halo (H) may have a height lower than the reference marking (M). It should be noted that the halo (H) does not necessarily have to have a uniform layer height (as shown in FIG. 9). For example, the layer height of the halo (H) may be varied or irregular, for example. It is also identifiable that the halo may be located immediately around the reference marking (M). According to the present invention, the halo (H) may be reduced and / or eliminated in terms of volume.

[0202] In one example of the method, there may be cases where the halo (H) is reduced only in terms of volume (otherwise, the halo (H) remains) and / or is completely removed.

[0203] In another example of the method, the reference marking (M) can be reduced in terms of volume, so that the reference marking remains and the halo (H) is completely removed from the mask (substantially without residue).

[0204] In another example of the method, the reference marking (M) can be reduced in terms of volume, so that the reference marking remains, the halo (H) is completely removed from the mask (substantially without residue), and the foreign material (F) in the scanning field (S) can be reduced and / or completely removed in terms of volume.

[0205] In another example of the method, the volume of the reference marking (M) and the halo (H) can be reduced, and as a result, the reference marking (M) and the halo (H) remain on the mask.

[0206] For the sake of completeness, it should be noted that the methods described herein are not necessarily limited to the structure width and / or structure height described above. For example, the methods may be applied to structure widths greater than 100 nm.

[0207] FIG. 10 schematically illustrates a device (100) according to the present invention. The device (100) may include a mask repair device adapted according to the present invention. For example, the device (100) may be designed so that electron beam-induced etching and / or deposition can be performed on a mask (O). The device (100) may include, for example, an electron source (101). The electron source (101) may emit an electron beam (102) that can be used to perform electron beam-induced etching or deposition on the mask (O). Means for deflecting, focusing, and / or adapting the electron beam are not plotted in FIG. 10. The device (100) may be configured so that the electron beam can be incident on a defined incident point (103) on the mask (O).

[0208] Additionally, the device may provide one or more deposition gases (DG) onto the object (O). These may be guided to the object through a suitable gas line (104). The device may also provide one or more etching gases (EG) onto the object. For example, these may be provided onto the object (O) through a suitable gas line (105). Additionally, an additive gas may be supplied to one or more deposition gases (DG) and / or one or more etching gases (EG). For simplification, a container for one or more additive gases is not shown in FIG. 10.

[0209] Additionally, the device (100) may include a user interface, thereby allowing the operator to operate the device (100), for example, and / or read data.

[0210] Additionally, the device may include a computer unit (106). The computer unit (106) may enable the device (100) to perform one of the methods described herein at least partially based on the execution of a suitable computer program.

[0211] FIG. 10 also illustrates a database (107) that may be included in, for example, a device (100). As described herein, an etching gas for reducing the volume of a reference marking (M) and / or foreign matter may be based on a deposition gas used to deposit the reference marking and / or foreign matter. For example, the etching gas may be related to the deposition gas. Similarly, an etching gas for processing the reference marking and / or foreign matter may be based on the material composition of the reference marking and / or foreign matter. The database may include a lookup table, for example, as described herein. In the database, the deposition gas may be related, for example, to a corresponding etching gas. If one wishes to select an etching gas within the scope of the method, it may be based on a deposition gas previously used when creating the reference marking and / or foreign matter. For example, the database (107) may store the fact that a first etching gas (EG1) is used when a first deposition gas (DG1) is used for the purpose of reducing volume. Thus, it may store that a different second etching gas (EG2) is used when a second deposition gas (DG2) is used for the purpose of reducing volume. For example, the database (107) may be communicated with the computer unit (106). Additionally, the computer unit (106) may also include the database (107).

[0212] For example, the reference marking may have been created via focused electron beam-induced deposition using a deposition gas (DG). As mentioned, the repair of the defect may also involve electron beam-induced deposition using a deposition gas (DG), and consequently, may have the corresponding deposition of foreign matter (F) (in the scanning field (S). In both types of deposition, for example, one of the following deposition gases (DG) (or gas mixtures): Cr(CO)6, Cr(CO)6 and NO2, TEOS, TEOS and NO2, Mo(CO)6, Mo(CO)6 and NO2 may have been used. The material of these deposition gases or gas mixtures may be present in the corresponding deposition material. In one example, the deposition gas (DG) used to deposit the reference marking and / or the deposition gas (DG) used for the repair may be stored in a database. Then, based on the database, an appropriate etching gas may be selected for the purpose of volume reduction.

[0213] Chrome-based reference markings (M) or chrome-based foreign substances (F) can be reduced in terms of volume (e.g., reduced in terms of height) or removed, for example, using precursor NOCl and H2O. Additionally, chrome-based reference markings (M) or chrome-based foreign substances (F) can be reduced in terms of volume (e.g., reduced in terms of height) or treated, for example, using XeF2 and H2O, or XeF2 and H2O and NO2. In this case, the process using NOCl and H2O can have high selectivity for mask material damage when removing deposited material, for example, molybdenum silicides (e.g., MoSi and / or MoSi2), OMOG (Opaque MoSi on Glass), CPL, and EUV mask materials.

[0214] The aforementioned method is also suitable for reducing and / or removing the height of chromium-based foreign matter at or around the repair site (of the defect). As described herein (for the sixth aspect of the invention), it is possible to treat foreign matter around the repair material, for example, according to the invention. Thus, chromium-based halos (as foreign matter) may occur, for example, around the repair site (or repair material), and can be treated according to the methods described herein.

[0215] Reference markings and / or foreign substances containing TEOS and / or silicon oxide can be reduced in volume or selectively removed, for example, using the precursor XeF2 or XeF2 and H2O.

[0216] The above-described method is also suitable for reducing and / or removing the height of TEOS-based or silicon oxide-based foreign matter at or around the repair site (of the defect). As described herein (for the sixth aspect of the invention), it is possible to treat foreign matter around the repair material, for example, according to the invention. For example, halos containing TEOS and / or silicon oxide may occur, for example, around the repair site (or repair material), whereby the halos can be treated according to the methods described herein.

[0217] Reference markings and / or foreign substances containing molybdenum can be reduced or removed in terms of volume using the precursor XeF2 and H2O or H2O. In this case, the process using H2O can have high selectivity for damage to the mark material when removing the deposited material, for example, molybdenum silicides (e.g., MoSi and / or MoSi2), OMOG (Opaque MoSi on Glass), CPL, and EUV mask materials.

[0218] The aforementioned method is also suitable for reducing and / or removing the height of molybdenum-based deposited material at or around a repair site (of a defect). As described herein (for the sixth aspect of the invention), it is possible to treat foreign matter around the repair material, for example, according to the invention. Thus, a halo containing molybdenum may also occur around a repair site (or repair material), where the halo can be treated according to the methods described herein.

[0219] The present invention may further enable an automated software-based work flow for reference marking and / or processing foreign substances.

[0220] As mentioned, the above method may initially involve repairing a defect, at which point the position of the reference marking is used, for example, for drift correction.

[0221] Repair quality can be evaluated after the repair process is completed. For example, this can be implemented by an operator of the device (100). For example, the repair site can be displayed in a user interface for the operator. Additionally, it is conceivable that the repair quality be implemented through an internal and / or external evaluation program. The evaluation program can be installed, for example, on the device (100). Additionally, it is conceivable that the repair data be transmitted to an external evaluation program for quality assurance.

[0222] If the repair or the quality of the repair is evaluated as successful, the operator may initiate reference marking and / or automated processing of foreign matter, if necessary, according to any of the methods described herein. For example, the operator may make appropriate inputs to the user interface of the device (100) for this purpose. (In the case of a successful repair) it is also conceivable that an internal and / or external evaluation program may automatically initiate reference marking and / or processing of foreign matter according to any of the methods described herein. Thus, in both cases, one of the methods described herein may be automatically prepared and initiated. For the automated execution of the methods described herein, it is possible to rely on, for example, a database (107), and from this database, it becomes clear which etching gas should be used (taking into account the deposition gas used).

[0223] Additional embodiments:

[0224] 1. As a method for processing lithography objects,

[0225] A method comprising the step of reducing the volume of a marking deposited on an object by treating the marking with a particle beam and an etching gas—the marking remaining on the object.

[0226] 2. A method in which the volume is reduced in such a way that the processed marking does not deviate from a predetermined specification during lithography in accordance with embodiment 1.

[0227] 3. A method in which, in embodiment 1 or embodiment 2, the volume of the marking is reduced by at least 10%, at least 30%, at least 50%, or at least 90%.

[0228] 4. A method in any one of embodiments 1 to 3, wherein the marking is deposited on an imaging structure of the object.

[0229] 5. A method in which, in embodiment 4, the volume is reduced such that the height of the processed marking associated with the imaging structure is smaller than the height of the imaging structure associated with the object.

[0230] 6. A method in which, in embodiment 5, the height of the processed marking is less than at least 10%, at least 30%, at least 50%, or at least 95% of the height of the imaging structure.

[0231] 7. A method in any one of embodiments 4 to 6, wherein the imaging structure comprises lateral dimensions of 100 nm or less, 80 nm or less, 60 nm or less, or 40 nm or less.

[0232] 8. A method in any one of embodiments 4 to 7, wherein the lateral dimension of the marking prior to processing corresponds to at least 50% of the lateral dimension of the imaging structure.

[0233] 9. A method comprising, in any one of embodiments 1 to 8, further a step of reducing the volume of foreign matter by using the particle beam and the etching gas to treat foreign matter on an object surrounding the marking.

[0234] 10. A method according to embodiment 9, wherein the foreign substance comprises a deposited material generated when the marking is deposited.

[0235] 11. A method according to embodiment 9 or embodiment 10, wherein the foreign substance comprises a foreign substance around the marking.

[0236] 12. A method in any one of embodiments 9 to 11, wherein the foreign substance comprises a deposited material preferably generated during the repair of the object when the marking is raster-scanned within the scanning field.

[0237] 13. A method in any one of embodiments 9 to 12, wherein the foreign substance is present next to and / or on the imaging structure of the object.

[0238] 14. Any one of embodiments 1 to 13. A method further comprising the step of selecting an etching gas, wherein the etching gas is selected at least partially based on a provided deposition gas used to deposit the marking and / or foreign material on an object surrounding the marking.

[0239] 15. Method according to embodiment 14, wherein the etching gas comprises a halogen.

[0240] 16. Method of embodiment 15, wherein the deposited gas contains chromium, and the halogen contains chlorine.

[0241] 17. Method according to embodiment 16, wherein the etching gas further comprises nitrogen and oxygen.

[0242] 18. Method according to embodiment 16 or embodiment 17, wherein the etching gas comprises chlorine, nitrogen, and oxygen, preferably nitrosyl chloride (NOCl), in the compound.

[0243] 19. A method according to embodiment 15, wherein the deposited gas comprises chromium and / or the deposited gas comprises silicon and oxygen and / or the deposited gas comprises molybdenum, and the halogen comprises fluorine.

[0244] 20. Method according to embodiment 19, wherein the etching gas further comprises xenon.

[0245] 21. A method according to embodiment 20, wherein the etching gas comprises fluorine and xenon, preferably xenon difluoride (XeF2), in the compound.

[0246] 22. A method according to embodiment 14, wherein the deposition gas comprises molybdenum, and the etching gas comprises oxygen.

[0247] 23. Method according to embodiment 22, wherein the etching gas comprises water.

[0248] 24. A method in any one of embodiments 1 to 23, wherein the marking and / or the foreign substance is further treated using an additive gas containing oxygen.

[0249] 25. Method according to embodiment 24, wherein the additive gas comprises water and / or nitrogen dioxide.

[0250] 26. A computer program comprising instructions for performing a method described in any one of embodiments 1 to 25 when executed.

[0251] 27. As a device for processing lithography objects,

[0252] Means for reducing the volume of a marking deposited on an object by treating the marking with a particle beam and an etching gas so that the marking remains on the object;

[0253] A computer unit that causes the device to perform the method described in any one of embodiments 1 to 25, based at least partially on the execution of the computer program described in embodiment 26.

[0254] A device including

Claims

Claim 1 A method for processing a lithography object, comprising the step of reducing the volume of a marking deposited on the lithography object by treating the marking with a particle beam and an etching gas—the marking remaining on the lithography object. Claim 2 A method according to claim 1, wherein the volume is reduced so that the processed marking does not cause deviation in relation to the optical specifications of the lithography during lithography. Claim 3 A method according to claim 1 or claim 2, wherein the volume of the marking is reduced by at least 50%. Claim 4 A method according to claim 1 or claim 2, wherein the marking is deposited on an imaging structure of the lithography object. Claim 5 A method according to claim 4, wherein the volume is reduced such that the height of the processed marking associated with the imaging structure is smaller than the height of the imaging structure associated with the lithography object. Claim 6 A method according to claim 5, wherein the marking is processed such that the height of the processed marking is at least 50% of the height of the imaging structure. Claim 7 The method of claim 4, wherein the imaging structure comprises a lateral dimension selected from 100 nm or less, 80 nm or less, 60 nm or less, or 40 nm or less. Claim 8 A method according to claim 4, wherein the lateral dimension of the marking prior to processing corresponds to at least 50% of the lateral dimension of the imaging structure. Claim 9 A method according to claim 1 or claim 2, further comprising the step of treating foreign substances of the lithography object around the marking using the particle beam and the etching gas to reduce the volume of said foreign substances. Claim 10 A method according to claim 9, wherein the foreign substance comprises a deposited material generated when the marking is deposited. Claim 11 A method according to claim 9, wherein the foreign substance comprises a foreign substance around the marking. Claim 12 A method according to claim 9, wherein the foreign substance comprises a deposited material generated when the marking is raster-scanned within a scanning field. Claim 13 A method according to claim 9, wherein the foreign substance is present next to and / or on the imaging structure of the lithography object. Claim 14 A method according to claim 1 or claim 2, further comprising the step of selecting an etching gas, wherein the etching gas is selected at least partially based on a provided deposition gas used to deposit the marking and / or foreign material on the lithography object around the marking. Claim 15 The method of claim 14, wherein the etching gas comprises a halogen. Claim 16 A method according to claim 15, wherein the deposited gas contains chromium, and the halogen contains chlorine. Claim 17 The method of claim 16, wherein the etching gas further comprises nitrogen and oxygen. Claim 18 The method of claim 16, wherein the etching gas comprises chlorine, nitrogen, and oxygen in a compound. Claim 19 A method according to claim 15, wherein the deposited gas comprises chromium and / or the deposited gas comprises silicon and oxygen and / or the deposited gas comprises molybdenum, and the halogen comprises fluorine. Claim 20 The method of claim 19, wherein the etching gas further comprises xenon. Claim 21 The method of claim 20, wherein the etching gas comprises fluorine and xenon in the compound. Claim 22 A method according to claim 14, wherein the deposition gas comprises molybdenum, and the etching gas comprises oxygen. Claim 23 The method of claim 22, wherein the etching gas comprises H2O. Claim 24 A method according to claim 9, wherein the marking and / or foreign substance is further treated using an additive gas containing oxygen. Claim 25 The method of claim 24, wherein the additive gas comprises H2O and / or nitrogen dioxide. Claim 26 A computer program stored on a computer-readable storage medium, comprising instructions for performing the method described in claim 1 when executed. Claim 27 An apparatus for processing a lithography object, comprising: means for processing a marking deposited on the lithography object with a particle beam and an etching gas to reduce the volume of the marking so that the marking remains on the lithography object; and a computer unit that causes the apparatus to perform the method described in claim 1, at least partially based on the execution of a computer program described in claim 26.

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