light-emitting element

Abstract

A light-emitting element is provided. The light-emitting element comprises a first light-emitting part, a second light-emitting part disposed on the first light-emitting part, a third light-emitting part disposed on the second light-emitting part, a passivation film covering the outer wall of each of the first to third light-emitting parts, a via pattern electrically connected to at least one of the first to third light-emitting parts by penetrating at least a portion of the first to third light-emitting parts, and a pad electrically connected to the via pattern and extending to the passivation film on one surface of the third light-emitting part.

Description

Technology Field

[0001] The present invention relates to a light-emitting element, and more specifically, to a light-emitting element in which a plurality of light-emitting parts are stacked. Background Technology

[0002] Light-emitting diodes (LEDs) are used as inorganic light sources in various fields, such as display devices, automotive lamps, and general lighting. Due to their advantages of long lifespan, low power consumption, and fast response speed, LEDs are rapidly replacing conventional light sources.

[0003] In particular, display devices generally implement various colors using a mixture of blue, green, and red. Each pixel of a display device is equipped with blue, green, and red subpixels; the color of a specific pixel is determined by the colors of these subpixels, and an image is realized through a combination of these pixels.

[0004] Light-emitting diodes have primarily been used as backlight sources in display devices. However, micro LEDs are currently being developed as next-generation displays that utilize light-emitting diodes to create direct images. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a light-emitting device with improved light efficiency and light extraction.

[0006] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0007] To achieve the task to be solved, a light-emitting element according to embodiments of the present invention comprises: a first light-emitting part; a second light-emitting part disposed on the first light-emitting part; a third light-emitting part disposed on the second light-emitting part; a passivation film covering the outer wall of each of the first to third light-emitting parts; a via pattern penetrating at least a portion of the first to third light-emitting parts and electrically connected to at least one of the first to third light-emitting parts; and a pad electrically connected to the via pattern and extending to the passivation film on one surface of the third light-emitting part.

[0008] According to embodiments, the light-emitting element may further include an extension pattern that is electrically connected to the via pattern and extends from one side of the third light-emitting part to the side of the first light-emitting part along the side of the first to third light-emitting parts, and a pillar pattern that is electrically connected between the extension pattern and the pad.

[0009] According to the embodiments, the light-emitting element may further include a conductive pattern that electrically connects the via pattern and the extension pattern between the via pattern and the extension pattern.

[0010] According to the embodiments, the light-emitting element may further include a light-blocking film that covers a portion of one surface of the first light-emitting part to define a light extraction surface.

[0011] According to the embodiments, the light-emitting element may further include a transparent adhesive portion disposed on a light extraction surface defined by the light-blocking film.

[0012] According to the embodiments, the first light-emitting part may include a first-1 type semiconductor layer, a first active layer, and a first-2 type semiconductor layer, the second light-emitting part may include a second-1 type semiconductor layer, a second active layer, and a second-2 type semiconductor layer, and the third light-emitting part may include a third-1 type semiconductor layer, a third active layer, and a third-2 type semiconductor layer.

[0013] According to embodiments, the via pattern may include a first via pattern penetrating the second and third light-emitting portions and electrically connected to the first-1 type semiconductor layer, a second via pattern penetrating the third light-emitting portion and electrically connected to the second-1 type semiconductor layer, a third via pattern electrically connected to the third-1 type semiconductor layer, a fourth via pattern penetrating the second and third light-emitting portions and electrically connected to the first-2 type semiconductor layer, a fifth via pattern penetrating the third light-emitting portion and electrically connected to the second-2 type semiconductor layer, and a sixth via pattern electrically connected to the third-2 type semiconductor layer.

[0014] According to embodiments, the pad may include a first pad electrically connected to the first via pattern, a second pad electrically connected to the second via pattern, a third pad electrically connected to the third via pattern, and a common pad electrically connected in common to the fourth to sixth via patterns.

[0015] According to the embodiments, the passivation film can fill the space between adjacent light-emitting elements.

[0016] According to the embodiments, the passivation film may be made of epoxy resin, EMC (Epoxy Molding Compound), or silicone.

[0017] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0018] According to the light-emitting element according to the embodiments of the present invention, a pad can be more flexibly placed on a light-emitting element with a small critical dimension.

[0019] The extended patterns extend along the sides of the light-emitting element and include metal, thereby reflecting and blocking light between adjacent light-emitting elements, which can improve the color reproduction of the light-emitting element.

[0020] By arranging a light-blocking film and defining a light extraction surface, the contrast of the light-emitting element can be increased, thereby improving the light extraction effect. Brief explanation of the drawing

[0021] FIG. 1a is a plan view for explaining a light-emitting element according to one embodiment of the present invention. FIG. 1b is a cross-sectional view of the light-emitting element of FIG. 1a cut along AA' and B-B'. FIG. 2a is a plan view for illustrating a light-emitting element according to another embodiment of the present invention. FIG. 2b is a cross-sectional view of the light-emitting element of FIG. 2a cut along AA' and B-B'. FIG. 3a is a plan view illustrating a light-emitting element according to another embodiment of the present invention. FIG. 3b is a cross-sectional view of the light-emitting element of FIG. 3a cut along AA' and B-B'. FIG. 4a is a plan view illustrating a light-emitting element according to another embodiment of the present invention. FIG. 4b is a cross-sectional view of the light-emitting element of FIG. 4a cut along AA' and B-B'. FIGS. 5a, FIGS. 6a, FIGS. 7a, FIGS. 8a, FIGS. 9a, FIGS. 10a and FIGS. 11a are plan views for illustrating a method for manufacturing a light-emitting element according to an embodiment of the present invention. FIGS. 5b, FIGS. 6b, FIGS. 7b, FIGS. 8b, FIGS. 9b, FIGS. 10b, and FIGS. 11b are cross-sectional views of the light-emitting elements of FIGS. 5a, FIGS. 6a, FIGS. 7a, FIGS. 8a, FIGS. 9a, FIGS. 10a, and FIGS. 11a cut along AA' and B-B'. Specific details for implementing the invention

[0022] Best form for carrying out the invention

[0023] To fully understand the structure and effects of the present invention, preferred embodiments of the present invention are described with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms and various modifications can be made.

[0024] In addition, unless otherwise defined, the terms used in the embodiments of the present invention may be interpreted in the sense commonly known to those skilled in the art.

[0025] Hereinafter, a light-emitting element according to embodiments of the present invention will be described in detail with reference to the drawings.

[0026] FIG. 1a is a plan view for explaining a light-emitting element according to one embodiment of the present invention, and FIG. 1b is a cross-sectional view of the light-emitting element of FIG. 1a cut along AA' and B-B'. FIG. 2a is a plan view for explaining a light-emitting element according to another embodiment of the present invention, and FIG. 2b is a cross-sectional view of the light-emitting element of FIG. 2a cut along AA' and B-B'. FIG. 3a is a plan view for explaining a light-emitting element according to yet another embodiment of the present invention, and FIG. 3b is a cross-sectional view of the light-emitting element of FIG. 3a cut along AA' and B-B'.

[0027] Referring to FIGS. 1a, FIGS. 1b, FIGS. 2a, FIGS. 2b, FIGS. 3a, and FIGS. 3b, the light-emitting element may include a substrate (100) and a first light-emitting part (LE1), a second light-emitting part (LE2), and a third light-emitting part (LE3) vertically stacked on the substrate (100).

[0028] The substrate (100) is a substrate capable of growing a gallium nitride-based semiconductor layer and may include sapphire (Al2O3), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga2O3), or silicon. Additionally, the substrate (100) may be a patterned sapphire substrate. According to one embodiment, the substrate (100) may include a material that transmits visible light. Meanwhile, the substrate (100) may optionally be omitted.

[0029] When the substrate (100) is a light extraction surface, the wavelength of light emitted from the first light-emitting unit (LE1) is the shortest, the wavelength of light emitted from the second light-emitting unit (LE2) is longer than the wavelength of light emitted from the first light-emitting unit (LE1) and shorter than the wavelength of light emitted from the third light-emitting unit (LE3), and the wavelength of light emitted from the third light-emitting unit (LE3) may be the longest. For example, the first light-emitting unit (LE1) may emit blue light, the second light-emitting unit (LE2) may emit green light, and the third light-emitting unit (LE3) may emit red light. However, the present disclosure is not limited thereto. For example, the second light-emitting unit (LE2) may emit light of a shorter wavelength than the first light-emitting unit (LE1).

[0030] The first light-emitting part (LE1) includes a first n-type semiconductor layer (102), a first active layer (104), a first p-type semiconductor layer (106), and a first ohmic layer (108), the second light-emitting part (LE2) includes a second n-type semiconductor layer (202), a second active layer (204), a second p-type semiconductor layer (206), and a second ohmic layer (208), and the third light-emitting part (LE3) may include a third n-type semiconductor layer (302), a third active layer (304), a third p-type semiconductor layer (306), and a third ohmic layer (308).

[0031] Each of the first n-type semiconductor layer (102), the second n-type semiconductor layer (202), and the third n-type semiconductor layer (302) may be a gallium nitride-based semiconductor layer doped with Si. Each of the first p-type semiconductor layer (106), the second p-type semiconductor layer (206), and the third p-type semiconductor layer (306) may be a gallium nitride-based semiconductor layer doped with Mg. Each of the first active layer (104), the second active layer (204), and the third active layer (304) may include a Multi Quantum Well (MQW) structure, and their composition ratios may be determined to emit light of a desired peak wavelength. Each of the first ohmic layer (108), the second ohmic layer (208), and the third ohmic layer (308) may be a transparent conductive oxide layer (TCO), such as tin oxide (SnO), indium oxide (InO2), zinc oxide (ZnO), indium tin oxide (ITO), and indium tin zinc oxide (ITZO).

[0032] The first light-emitting part (LE1) may be spaced apart from the second light-emitting part (LE2) with the first adhesive part (AD1) in between. For example, the first ohmic layer (108) of the first light-emitting part (LE1) and the second n-type semiconductor layer (202) of the second light-emitting part (LE2) may face each other with the first adhesive part (AD1) in between. For another example, the first ohmic layer (108) of the first light-emitting part (LE1) and the second ohmic layer (208) of the second light-emitting part (LE2) may face each other with the first adhesive part (AD1) in between.

[0033] The second light-emitting part (LE2) may be spaced apart from the third light-emitting part (LE3) with the second adhesive part (AD2) in between. For example, the second ohmic layer (208) of the second light-emitting part (LE2) may face the third ohmic layer (308) of the third light-emitting part (LE3) with the second adhesive part (AD2) in between. For another example, the second ohmic layer (208) of the second light-emitting part (LE2) may face the third n-type semiconductor layer (302) of the third light-emitting part (LE3) with the second adhesive part (AD2) in between.

[0034] Each of the first adhesive portion (AD1) and the second adhesive portion (AD2) may comprise a material that transmits visible light and has insulating properties. Each of the first adhesive portion (AD1) and the second adhesive portion (AD2) may comprise a polymer, a resist, or a polyimide. For example, each of the first adhesive portion (AD1) and the second adhesive portion (AD2) may comprise SOG (Spin-On-Glass), BCB (BenzoCycloButadiene), HSQ (Hydrogen SilsesQuioxanes), SU-8 photoresist, epoxy resin, or Flare, which is a poly arylene ether (PAE) series. TM It may include at least one selected from the group consisting of PMMA (polymethylmethacrylate), PDMS (polydimethylsiloxane), fluoropolymer, polyimide, MSSQ (methylsilisequioxane), PEEK (polyethereherketone), ATSP (Aromatic Thermosetting Polyester), PVDC (Polyvinylidene chloride), LCP (liquid-crystal polymer), and wax.

[0035] The light-emitting element may further include a first color filter (CF1) disposed between a first light-emitting part (LE1) and a second light-emitting part (LE2), and a second color filter (CF2) disposed between a second light-emitting part (LE2) and a third light-emitting part (LE3). The first color filter (CF1) may be disposed on the first ohmic layer (108) of the first light-emitting part (LE1) or the second ohmic layer (208) of the second light-emitting part (LE2). The second color filter (CF2) may be disposed on the second ohmic layer (208) of the second light-emitting part (LE2) or the third ohmic layer (308) of the third light-emitting part (LE3). The first color filter (CF1) can reflect light generated from the first light-emitting unit (LE1) and allow light generated from the second light-emitting unit (LE2) and the third light-emitting unit (LE3) to pass through, so that light generated from the first light-emitting unit (LE1) does not affect the second light-emitting unit (LE2) and the third light-emitting unit (LE3), respectively. The second color filter (CF2) can reflect light generated from the first light-emitting unit (LE1) and the second light-emitting unit (LE2) and allow light generated from the third light-emitting unit (LE3) to pass through, so that light generated from the first light-emitting unit (LE1) and the second light-emitting unit (LE2) each does not affect the third light-emitting unit (LE3). Each of the first color filter (CF1) and the second color filter (CF2) may include a Distributed Bragg Reflector (DBR) having a structure in which TiO2 and SiO2 are alternately stacked. The first color filter (CF1) may differ from the second color filter (CF2) in the number of alternating TiO2 and SiO2 layers and thickness. According to one embodiment, the first color filter (CF1) and the second color filter (CF2) may optionally be omitted.

[0036] The light-emitting element may further include a first extension pattern (EL1) electrically connected to a first n-type semiconductor layer (102), a second extension pattern (EL2) electrically connected to a second n-type semiconductor layer (202), a third extension pattern (EL3) electrically connected to a third n-type semiconductor layer (302), and a common extension pattern (CEL) electrically connected in common to a first ohmic layer (108), a second ohmic layer (208), and a third ohmic layer (308). According to one embodiment, each of the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL) may be spaced apart from each other on a third light-emitting part (LE3). For example, if the light-emitting element has a rectangular structure in a planar view, each of the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL) may be placed at each corner of the rectangular light-emitting element. Each of the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL) may include at least one selected from the group consisting of Au, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Hf, Cr, Ti, Ta, and Cu. Additionally, they may include an alloy of the materials listed above.

[0037] In this embodiment, the common extension pattern (CEL) is described as electrically connecting the first ohmic layer (108), the second ohmic layer (208), and the third ohmic layer (308) in common, but the common extension pattern (CEL) can electrically connect the first n-type semiconductor layer (102), the second n-type semiconductor layer (202), and the third n-type semiconductor layer (302) in common.

[0038] The light-emitting element further comprises a first via pattern (VA1) connecting a first n-type semiconductor layer (102) and a first extension pattern (EL1) while penetrating a third light-emitting part (LE3), a second adhesive part (AD2), a second color filter (CF2), a second light-emitting part (LE2), a first adhesive part (AD1), a first color filter (CF1), a first ohmic layer (108), a first p-type semiconductor layer (106), and a first active layer (104); a second via pattern (VA2) connecting a second n-type semiconductor layer (202) and a second extension pattern (EL2) while penetrating a third light-emitting part (LE3), a second adhesive part (AD2), a second color filter (CF2), a second ohmic layer (208), a second p-type semiconductor layer (206), and a second active layer (204); and a third via pattern (VA3) connecting a third n-type semiconductor layer (302) and a third extension pattern (EL3). It may be included. According to one embodiment, the third via pattern (VA3) may be omitted.

[0039] The light-emitting element may further include a fourth via pattern (VA4) that penetrates the third light-emitting part (LE3), the second adhesive part (AD2), the second color filter (CF2), the second light-emitting part (LE2), the first adhesive part (AD1), and the first color filter (CF1) and connects the first ohmic layer (108) and the common extension pattern (CEL); a fifth via pattern (VA5) that penetrates the third light-emitting part (LE3), the second adhesive part (AD2), and the second color filter (CF2) and connects the second ohmic layer (208) and the common extension pattern (CEL); and a sixth via pattern (VA6) that penetrates the third n-type semiconductor layer (302), the third active layer (304), and the third p-type semiconductor layer (306) and connects the third ohmic layer (308).

[0040] Each of the first via pattern (VA1), the second via pattern (VA2), the third via pattern (VA3), the fourth via pattern (VA4), the fifth via pattern (VA5), and the sixth via pattern (VA6) may include at least one selected from the group consisting of Au, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Hf, Cr, Ti, Ta, and Cu. Additionally, they may include an alloy of the materials listed above.

[0041] According to one embodiment, the first via pattern (VA1) and the first extension pattern (EL1), the second via pattern (VA2) and the second extension pattern (EL2), the third via pattern (VA3) and the third extension pattern (EL3), the fourth via pattern (VA4), the fifth via pattern (VA5), the sixth via pattern (VA6), and the common extension pattern (CEL) may be integral.

[0042] The light-emitting element may further include a first passivation film (PVT1) that surrounds the outer walls of each of the first via pattern (VA1), the second via pattern (VA2), the third via pattern (VA3), the fourth via pattern (VA4), the fifth via pattern (VA5), and the sixth via pattern (VA6), extends above the third light-emitting part (LE3), and insulates between the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL) and the third light-emitting part (LE3). The first passivation film (PVT1) may include at least one selected from the group consisting of SiNx, TiNx, TiOx, TaOx, ZrOx, HfOx, AlxOy, and SiOx.

[0043] The light-emitting element may further include a first pillar pattern (PL1) electrically connecting a first extension pattern (EL1) and a first pad (PD1), a second pillar pattern (PL2) electrically connecting a second extension pattern (EL2) and a second pad (PD2), a third pillar pattern (PL3) electrically connecting a third extension pattern (EL3) and a third pad (PD3), and a common pillar pattern (CPL) electrically connecting a common extension pattern (CEL) and a common pad (CPD). Each of the first pillar pattern (PL1), the second pillar pattern (PL2), the third pillar pattern (PL3), and the common pillar pattern (CPL) may include at least one selected from the group consisting of Au, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Hf, Cr, Ti, Ta, and Cu. Additionally, it may include an alloy of the materials listed above.

[0044] Additionally, the light-emitting element may further include a second passivation film (PVT2) that fills the space between the first pillar pattern (PL1), the second pillar pattern (PL2), the third pillar pattern (PL3), and the common pillar pattern (CPL) on the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL). The second passivation film (PVT2) is made of EMC (Epoxy Molding Compound), epoxy resin, silicone, photoresist, BCB, Flare TM It may include at least one selected from the group consisting of organic materials such as MSSQ, PMMA, PDMS, fluoropolymer, polyimide, PEEK, ATSP, PVDC, LCP, and wax, or inorganic materials such as SiNx, TiNx, TiOx, TaOx, ZrOx, HfOx, AlxOy, and SiOx. Additionally, when using organic materials, it may be formed in various colors such as black or transparent.

[0045] According to embodiments of the present invention, the critical dimension (CD) of each of the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3) is small, ranging from 50 to 80 μm, and when the first pad (PD1), the second pad (PD2), the third pad (PD3), and the common pad (CPD) are directly connected to each of the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3), the distance between the first pad (PD1), the second pad (PD2), the third pad (PD3), and the common pad (CPD) may be too small. To overcome this, the spacing between the first pad (PD1), the second pad (PD2), the third pad (PD3), and the common pad (CPD) can be increased by using the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL), and the first pillar pattern (PL1), the second pillar pattern (PL2), the third pillar pattern (PL3), and the common pillar pattern (CPL). Additionally, since each of the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL), and the first pillar pattern (PL1), the second pillar pattern (PL2), the third pillar pattern (PL3), and the common pillar pattern (CPL) includes a metal, they can perform the function of reflecting and blocking light between adjacent light-emitting elements.

[0046] According to another embodiment illustrated in FIG. 2a and 2b, the light-emitting element may further include a first conductive pattern (CP1) electrically connecting a first via pattern (VA1) and a first extension pattern (EL1), a second conductive pattern (CP2) electrically connecting a second via pattern (VA2) and a second extension pattern (EL2), a third conductive pattern (CP3) electrically connecting a third via pattern (VA3) and a third extension pattern (EL3), and a common conductive pattern (CCP) electrically connecting a common via pattern and a common extension pattern (CEL). Each of the first conductive pattern (CP1), the second conductive pattern (CP2), the third conductive pattern (CP3), and the common conductive pattern (CCP) may include at least one selected from the group consisting of Au, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Hf, Cr, Ti, and Cu. Additionally, it may include an alloy of the materials listed above. By adjusting the position and width of the first challenge pattern (CP1), second challenge pattern (CP2), third challenge pattern (CP3), and common challenge pattern (CCP), the spacing between the first pad (PD1), second pad (PD2), third pad (PD3), and common pad (CPD) can be adjusted more flexibly.

[0047] In FIGS. 1a, 3a, and 3b, FIG. 1a is a plan view seen from the third light-emitting unit (LE3), and FIG. 3a is a plan view seen from the first light-emitting unit (LE1). According to another embodiment illustrated in FIGS. 1a, 3a, and 3b, the light-emitting element may further include a light-blocking film (LS) disposed on one side of the first light-emitting unit (LE1) to cover a portion of the light extraction surface of the light-emitting element. The light-blocking film (LS) may include a photoresist or a black matrix. In this way, the light-blocking film (LS) can cover a portion of the light extraction surface to reduce the area of ​​the light extraction surface, thereby increasing the contrast of the light-emitting element. Thus, the light extraction effect of the light-emitting element can be improved.

[0048] In the light-emitting element of FIGS. 3a and 3b, according to one embodiment, a light-blocking film (LS) covers a portion of the light extraction surface, and a portion (SP) of one side of the first light-emitting part (LE1) where the light-blocking film (LS) is not placed may be exposed to air. According to another embodiment, a third adhesive part having visible light transmittance characteristics may be further placed on a portion (SP) of one side of the first light-emitting part (LE1) where the light-blocking film (LS) is not placed. The upper surface of the third adhesive part may be coplanar with the upper surface of the light-blocking film (LS). Additionally, the third adhesive part may include SOG, BCB, HSQ, or SU-8 photoresist.

[0049] Form for carrying out the invention

[0050] FIG. 4a is a plan view for illustrating a light-emitting element according to another embodiment of the present invention, and FIG. 4b is a cross-sectional view of the light-emitting element of FIG. 4a cut along AA' and B-B'.

[0051] Referring to FIGS. 4a and 4b, the light-emitting element may include a substrate (100) and a first light-emitting part (LE1), a second light-emitting part (LE2), and a third light-emitting part (LE3) vertically stacked on the substrate (100).

[0052] The first light-emitting part (LE1) includes a first n-type semiconductor layer (102), a first active layer (104), a first p-type semiconductor layer (106), and a first ohmic layer (108), the second light-emitting part (LE2) includes a second n-type semiconductor layer (202), a second active layer (204), a second p-type semiconductor layer (206), and a second ohmic layer (208), and the third light-emitting part (LE3) may include a third n-type semiconductor layer (302), a third active layer (304), a third p-type semiconductor layer (306), and a third ohmic layer (308).

[0053] The light-emitting element may further include a first via pattern (VA1), a second via pattern (VA2), a third via pattern (VA3), a fourth via pattern (VA4), a fifth via pattern (VA5), and a sixth via pattern (VA6); a first passivation film (PVT1) that surrounds the outer walls of each of the first via pattern (VA1), the second via pattern (VA2), the third via pattern (VA3), the fourth via pattern (VA4), the fifth via pattern (VA5), and the sixth via pattern (VA6) and extends to one side of the third light-emitting part (LE3); and a second passivation film (PVT2) that surrounds the outer walls of each of the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3). According to one embodiment, the upper surface of the second passivation film (PVT2) may be coplanar with the upper surface of the first passivation film (PVT1).

[0054] The light-emitting element may further include a first pad (PD1) disposed across a first passivation film (PVT1) and a second passivation film (PVT2) and electrically connected to a first via pattern (VA1), a second pad (PD2) disposed across a first passivation film (PVT1) and a second passivation film (PVT2) and electrically connected to a second via pattern (VA2), a third pad (PD3) disposed across a first passivation film (PVT1) and a second passivation film (PVT2) and electrically connected to a third via pattern (VA3), and a common pad (CPD) disposed across a first passivation film (PVT1) and a second passivation film (PVT2) and electrically connected to a fourth via pattern (VA4), a fifth via pattern (VA5), and a sixth via pattern (VA6).

[0055] According to the present embodiment, the first pad (PD1), the second pad (PD2), the third pad (PD3), and the common pad (CPD) are each extended and arranged not only by the first passivation membrane (PVT1) but also by the second passivation membrane (PVT2), thereby allowing the first pad (PD1), the second pad (PD2), the third pad (PD3), and the common pad (CPD) to be arranged within a wider area.

[0056] The light-emitting element described in this embodiment is substantially the same as the light-emitting element described in FIG. 1a and FIG. 1b, so a detailed description thereof is omitted.

[0057] Hereinafter, a method for manufacturing a light-emitting element will be described. In this embodiment, a method for manufacturing a light-emitting element illustrated in FIG. 1a and FIG. 1b will be described by way of example.

[0058] FIGS. 5a, FIGS. 6a, FIGS. 7a, FIGS. 8a, FIGS. 9a, FIGS. 10a and FIGS. 11a are plan views for explaining a method of manufacturing a light-emitting element according to an embodiment of the present invention, and FIGS. 5b, FIGS. 6b, FIGS. 7b, FIGS. 8b, FIGS. 9b, FIGS. 10b and FIGS. 11b are cross-sectional views of the light-emitting element of FIGS. 5a, FIGS. 6a, FIGS. 7a, FIGS. 8a, FIGS. 9a, FIGS. 10a and FIGS. 11a by cutting along AA' and B-B'.

[0059] Referring to FIGS. 5a and 5b, a first n-type semiconductor layer (102), a first active layer (104), a first p-type semiconductor layer (106), and a first ohmic layer (108) can be sequentially formed on a first substrate (100). The first n-type semiconductor layer (102), the first active layer (104), and the first p-type semiconductor layer (106) can be sequentially formed on the first substrate (100) using growth methods such as MOCVD (Metal-Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy), HVPE (Hydride Vapor Phase Epitaxy), and MOC (Metal-Organic Chloride). The first ohmic layer (108) can be formed on the first p-type semiconductor layer (106) through processes such as Chemical Vapor Deposition (CVD) and Physical Vapor Deposition.

[0060] A second emitting part (LE2) can be formed by sequentially forming a second n-type semiconductor layer (202), a second active layer (204), a second p-type semiconductor layer (206), and a second ohmic layer (208) on a second substrate (not shown). The second n-type semiconductor layer (202), the second active layer (204), and the second p-type semiconductor layer (206) can be sequentially formed on the second substrate using growth methods such as MOCVD, MBE, HVPE, and MOC. The second ohmic layer (208) can be formed on the second p-type semiconductor layer (206) through CVD, PVD processes, etc.

[0061] The second substrate can be flipped over so that the second ohmic layer (208) faces the support substrate (not shown), and the second light-emitting part (LE2) can be attached to the support substrate (not shown) using an attachable / detachable adhesive. After attaching the second light-emitting part (LE2) to the support substrate (not shown), the second substrate can be removed through a Laser Lift-Off (LLO) process or a Chemical Lift-Off (CLO) process.

[0062] The support substrate can be flipped over so that the second n-type semiconductor layer (202) faces the first ohmic layer (108), and the second light-emitting part (LE2) can be attached to the first light-emitting part (LE1) through the first adhesive part (AD1). After attaching the first light-emitting part (LE1) and the second light-emitting part (LE2), the support substrate (not shown) can be removed through the detachable adhesive part.

[0063] A third light-emitting part (LE3) can be formed by sequentially forming a third n-type semiconductor layer (302), a third active layer (304), a third p-type semiconductor layer (306), and a third ohmic layer (308) on a third substrate (not shown). The third n-type semiconductor layer (302), the third active layer (304), and the third p-type semiconductor layer (306) can be sequentially formed on the third substrate using growth methods such as MOCVD, MBE, HVPE, and MOC. The third ohmic layer (308) can be formed on the third p-type semiconductor layer (306) through CVD, PVD processes, etc.

[0064] The third substrate can be flipped over so that the second n-type semiconductor layer (202) of the second light-emitting part (LE2) and the third ohmic layer (308) of the third light-emitting part (LE3) face each other, and the second light-emitting part (LE2) and the third light-emitting part (LE3) can be bonded through the second adhesive part (AD2). After bonding the second light-emitting part (LE2) and the third light-emitting part (LE3) with the second adhesive part (AD2), the third substrate can be removed through an LLO or CLO process.

[0065] Referring to FIGS. 6a and 6b, a first via hole (VH1) that exposes a first n-type semiconductor layer (102) by etching a third light-emitting part (LE3), a second light-emitting part (LE2), and a first light-emitting part (LE1), a second via hole (VH2) that exposes a second n-type semiconductor layer (202), a third via hole (VH3) that exposes a third n-type semiconductor layer (302), a fourth via hole (VH4) that exposes a first ohmic layer (108), a fifth via hole (VH5) that exposes a second ohmic layer (208), and a sixth via hole (VH6) that exposes a third ohmic layer (308) can be formed.

[0066] According to one embodiment, while forming the first via hole (VH1), the second via hole (VH2), the third via hole (VH3), the fourth via hole (VH4), the fifth via hole (VH5), and the sixth via hole (VH6), the sides of the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3) are etched to expose the substrate (100), thereby allowing each of the light-emitting elements to be separated. Although not illustrated in detail, each of the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3) may have inclined sidewalls. Additionally, each of the first via hole (VH1), the second via hole (VH2), the third via hole (VH3), the fourth via hole (VH4), the fifth via hole (VH5), and the sixth via hole (VH6) may also have inclined sidewalls.

[0067] Referring to FIGS. 7a and 7b, the first passivation film (PVT1) can be formed conformally along the first light-emitting part (LE1), the second light-emitting part (LE2), and the third light-emitting part (LE3) without completely filling each of the first via hole (VH1), the second via hole (VH2), the third via hole (VH3), the fourth via hole (VH4), the fifth via hole (VH5), and the sixth via hole (VH6).

[0068] A first passivation film (PVT1) can be etched to expose a first n-type semiconductor layer (102) on the bottom surface of a first via hole (VH1), a second n-type semiconductor layer (202) on the bottom surface of a second via hole (VH2), a third n-type semiconductor layer (302) on the bottom surface of a third via hole (VH3), a first ohmic layer (108) on the bottom surface of a fourth via hole (VH4), a second ohmic layer (208) on the bottom surface of a fifth via hole (VH5), and a sixth via hole (VH6) on the bottom surface of a third ohmic layer (308).

[0069] Referring to FIG. 8a and FIG. 8b, a first via pattern (VA1), a second via pattern (VA2), a third via pattern (VA3), a fourth via pattern (VA4), a fifth via pattern (VA5), and a sixth via pattern (VA6) can be formed to fill each of the first via hole (VH1), the second via hole (VH2), the third via hole (VH3), the fourth via hole (VH4), the fifth via hole (VH5), and the sixth via hole (VH6), respectively, in which a first passivation film (PVT1) is formed.

[0070] A first via pattern (VA1) fills a first via hole (VH1) and is electrically in contact with a first n-type semiconductor layer (102), a second via pattern (VA2) fills a second via hole (VH2) and is electrically in contact with a second n-type semiconductor layer, a third via pattern (VA3) fills a third via hole (VH3) and is electrically in contact with a third n-type semiconductor layer (302), a fourth via pattern (VA4) fills a fourth via hole (VH4) and is electrically in contact with a first ohmic layer (108), a fifth via pattern (VA5) fills a fifth via hole (VH5) and is electrically in contact with a second ohmic layer (208), and a sixth via pattern (VA6) fills a sixth via hole (VH6) and is electrically in contact with a third ohmic layer (308).

[0071] According to one embodiment, the upper surface of each of the first via pattern (VA1), the second via pattern (VA2), the third via pattern (VA3), the fourth via pattern (VA4), the fifth via pattern (VA5), and the sixth via pattern (VA6) may be coplanar with the upper surface of the first passivation film (PVT1).

[0072] Referring to FIGS. 9a and 9b, a first extension pattern (EL1) that is electrically connected to a first via pattern (VA1) and extends to a substrate (100), a second extension pattern (EL2) that is electrically connected to a second via pattern (VA2) and extends to a substrate (100), a third extension pattern (EL3) that is electrically connected to a third via pattern (VA3) and extends to a substrate (100), and a common extension pattern (CEL) that is electrically connected to a fourth via pattern (VA4), a fifth via pattern (VA5), and a sixth via pattern (VA6) and extends to a substrate (100) can be formed.

[0073] The first extension pattern (EL1) is electrically in contact with the first via pattern (VA1) on the first passivation film (PVT1) formed on the third light-emitting part (LE3) and can extend to the upper surface of the substrate (100) along the sides of the third light-emitting part (LE3), the second light-emitting part (LE2), and the first light-emitting part (LE1). The second extension pattern (EL2) is electrically in contact with the second via pattern (VA2) on the first passivation film (PVT1) formed on the third light-emitting part (LE3) and can extend to the upper surface of the substrate (100) along the sides of the third light-emitting part (LE3), the second light-emitting part (LE2), and the first light-emitting part (LE1). The third extension pattern (EL3) is electrically in contact with the third via pattern (VA3) on the first passivation film (PVT1) formed on the third light-emitting part (LE3) and can extend to the upper surface of the substrate (100) along the sides of the third light-emitting part (LE3), the second light-emitting part (LE2), and the first light-emitting part (LE1). The common extension pattern (CEL) is electrically in contact with the fourth via pattern (VA4), the fifth via pattern (VA5), and the sixth via pattern (VA6) on the first passivation film (PVT1) formed on the third light-emitting part (LE3), and can extend to the upper surface of the substrate (100) along the sides of the third light-emitting part (LE3), the second light-emitting part (LE2), and the first light-emitting part (LE1).

[0074] Referring to FIG. 10a and FIG. 10b, a second passivation film (PVT2) can be formed on a substrate (100) having a first extension pattern (EL1), a second extension pattern (EL2), a third extension pattern (EL3), and a common extension pattern (CEL). The second passivation film (PVT2) can fill the space between the separated light-emitting elements.

[0075] By etching the second passivation film (PVT2), a first hole (HL1), a second hole (HL2), a third hole (HL3), and a fourth hole (HL4) can be formed, respectively, by exposing a portion of each of the first extension pattern (EL1), the second extension pattern (EL2), the third extension pattern (EL3), and the common extension pattern (CEL).

[0076] The first hole (HL1) exposes a portion of the first extension pattern (EL1) extended onto the substrate (100), the second hole (HL2) exposes a portion of the second extension pattern (EL2) extended onto the substrate (100), the third hole (HL3) exposes a portion of the third extension pattern (EL3) extended onto the substrate (100), and the fourth hole (HL4) exposes a portion of the common extension pattern (CEL) extended onto the substrate (100).

[0077] According to one embodiment, each of the first hole (HL1), second hole (HL2), third hole (HL3), and fourth hole (HL4) may have a structure in which the width becomes narrower as it approaches the substrate (100).

[0078] Referring to FIG. 11a and FIG. 11b, a first pillar pattern (PL1), a second pillar pattern (PL2), a third pillar pattern (PL3), and a common pillar pattern (CPL) can be formed to fill each of the first hole (HL1), the second hole (HL2), the third hole (HL3), and the fourth hole (HL4).

[0079] According to one embodiment, the upper surface of each of the first pillar pattern (PL1), the second pillar pattern (PL2), the third pillar pattern (PL3), and the common pillar pattern (CPL) may be coplanar with the upper surface of the second passivation film (PVT2).

[0080] Again, referring to FIGS. 1a and 1b, a first pad (PD1) electrically connected to a first pillar pattern (PL1), a second pad (PD2) electrically connected to a second pillar pattern (PL2), a third pad (PD3) electrically connected to a third pillar pattern (PL3), and a common pad (CPD) electrically connected to a common pillar pattern (CPL) can be formed.

[0081] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

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