Display apparatus and method for manufacturing the same

Abstract

The present invention provides a display device and a method for manufacturing the same, wherein the area of ​​a pixel electrode is reduced through a bridge electrode that electrically connects a pixel circuit and a pixel electrode, thereby reducing the external light reflectance on the surface of the display device, the display device comprises: a substrate; a pixel circuit disposed on the substrate and including a thin-film transistor and a storage capacitor; an insulating layer covering the pixel circuit; a bridge electrode disposed on the insulating layer and electrically connected to the pixel circuit through a contact hole formed in the insulating layer; a pixel electrode disposed on the insulating layer and electrically connected to the bridge electrode; a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; a counter electrode on the pixel electrode; and a light-emitting layer between the pixel electrode and the counter electrode; wherein the pixel electrode does not overlap with the contact hole of the insulating layer on a flat surface.

Description

Technology Field

[0001] The present invention relates to a display device and a method for manufacturing the same. Background Technology

[0002] A display device is a device that provides visual information, such as images or videos, to the user. As various electronic devices, such as computers and large-screen TVs, advance, diverse types of display devices applicable to them are being developed. Recently, electronic devices based on mobility are being widely used, and mobile phones and tablet PCs are commonly used as such devices.

[0003] Among various display devices, organic light-emitting diodes (OLEDs) are widely used due to their advantages, including a wide viewing angle, excellent contrast, and fast response speed. Generally, OLEDs operate by forming thin-film transistors and organic light-emitting diodes on a substrate, with the OLEDs emitting light themselves. The problem to be solved

[0004] Meanwhile, external light may be reflected from the surface of the display device and become visible to the user. To minimize this, the display device may be equipped with a polarizing layer, but this may lead to an increase in the thickness of the display device and a decrease in light efficiency.

[0005] The present invention aims to solve various problems, including those mentioned above, by providing a display device with reduced external light reflectance on the surface of the display device and a method for manufacturing the same. However, these problems are exemplary and do not limit the scope of the present invention. means of solving the problem

[0006] According to one aspect of the present invention, a display device is provided comprising: a substrate; a pixel circuit disposed on the substrate and including a thin-film transistor and a storage capacitor; an insulating layer covering the pixel circuit; a bridge electrode disposed on the insulating layer and electrically connected to the pixel circuit through a contact hole formed in the insulating layer; a pixel electrode disposed on the insulating layer and electrically connected to the bridge electrode; a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; a counter electrode on the pixel electrode; and a light-emitting layer between the pixel electrode and the counter electrode; wherein the pixel electrode does not overlap with the contact hole of the insulating layer on a flat surface.

[0007] According to the present embodiment, at least a portion of the bridge electrode may overlap with the opening of the pixel defining film on a plane.

[0008] According to the present embodiment, the bridge electrode may include a transparent conductive oxide.

[0009] According to the present embodiment, the area of ​​the bridge electrode on a plane may be larger than the area of ​​the pixel electrode.

[0010] According to the present embodiment, at least a portion of the bridge electrode may be located on the pixel electrode.

[0011] According to the present embodiment, the pixel electrode comprises a conductive film comprising a transparent conductive oxide; and a reflective film disposed on the conductive film and comprising a metal; wherein at least a portion of the bridge electrode may be in contact with the upper surface of the reflective film of the pixel electrode.

[0012] According to the present embodiment, the pixel electrode comprises: a lower conductive film comprising a transparent conductive oxide; a reflective film comprising a metal disposed on the lower conductive film; and an upper conductive film comprising a transparent conductive oxide disposed on the reflective film; wherein at least a portion of the bridge electrode may be in contact with the upper surface of the upper conductive film of the pixel electrode.

[0013] According to the present embodiment, at least a portion of the bridge electrode may be interposed between the insulating layer and the pixel electrode.

[0014] According to the present embodiment, the pixel electrode comprises a reflective film including a metal; and a conductive film disposed on the reflective film and including a transparent conductive oxide; and at least a portion of the bridge electrode may be in contact with the lower surface of the reflective film of the pixel electrode.

[0015] According to the present embodiment, the pixel electrode comprises: a lower conductive film comprising a transparent conductive oxide; a reflective film comprising a metal disposed on the lower conductive film; and an upper conductive film comprising a transparent conductive oxide disposed on the reflective film; wherein at least a portion of the bridge electrode may be in contact with the lower surface of the lower conductive film of the pixel electrode.

[0016] According to the present embodiment, the bridge electrode comprises: a first bridge electrode layer interposed between the insulating layer and the pixel electrode; and a second bridge electrode layer disposed on the first bridge electrode layer; and the pixel electrode may be interposed between the first bridge electrode layer and the second bridge electrode layer of the bridge electrode.

[0017] According to the present embodiment, the pixel electrode includes a reflective film containing metal, and the first bridge electrode layer can come into contact with the lower surface of the reflective film of the pixel electrode.

[0018] According to the present embodiment, the pixel electrode further comprises a conductive film located on the reflective film and including a transparent conductive oxide, and the second bridge electrode layer may be in contact with the upper surface of the conductive film of the pixel electrode.

[0019] According to the present embodiment, the pixel defining film may include a light-blocking material.

[0020] According to another aspect of the present invention, an apparatus for manufacturing a display device is provided, comprising the steps of: forming a pixel circuit including a thin-film transistor and a storage capacitor on a substrate; forming an insulating layer covering the pixel circuit and including at least one contact hole; forming a bridge electrode disposed on the insulating layer and electrically connected to the pixel circuit through the contact hole of the insulating layer; forming a pixel electrode disposed on the insulating layer and electrically connected to the bridge electrode; forming a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; forming a light-emitting layer on the pixel electrode; and forming a counter electrode on the light-emitting layer; wherein the step of forming the pixel electrode comprises: forming a pixel electrode material layer; and patterning the pixel electrode material layer such that the pixel electrode does not overlap with the contact hole of the insulating layer on a plane.

[0021] According to the present embodiment, the step of forming the bridge electrode may include: the step of forming the bridge electrode material layer; and the step of patterning the bridge electrode material layer such that at least a portion of the bridge electrode overlaps with the opening of the pixel defining film on a plane.

[0022] According to the present embodiment, the bridge electrode may include a transparent conductive oxide.

[0023] According to the present embodiment, the pixel electrode comprises a conductive film comprising a transparent conductive oxide; and a reflective film comprising a metal disposed on the conductive film; wherein at least a portion of the bridge electrode is located on the pixel electrode and can come into contact with the upper surface of the reflective film of the pixel electrode.

[0024] According to the present embodiment, the pixel electrode comprises: a lower conductive film comprising a transparent conductive oxide; a reflective film comprising a metal disposed on the lower conductive film; and an upper conductive film comprising a transparent conductive oxide disposed on the reflective film; wherein at least a portion of the bridge electrode is located on the pixel electrode and can come into contact with the upper surface of the upper conductive film of the pixel electrode.

[0025] According to the present embodiment, the pixel electrode comprises a reflective film comprising a metal; and a conductive film disposed on the reflective film and comprising a transparent conductive oxide; and at least a portion of the bridge electrode is interposed between the insulating layer and the pixel electrode and can come into contact with the lower surface of the reflective film of the pixel electrode.

[0026] According to the present embodiment, the pixel electrode comprises: a lower conductive film comprising a transparent conductive oxide; a reflective film comprising a metal disposed on the lower conductive film; and an upper conductive film comprising a transparent conductive oxide disposed on the reflective film; wherein at least a portion of the bridge electrode is interposed between the insulating layer and the pixel electrode and can come into contact with the lower surface of the lower conductive film of the pixel electrode.

[0027] According to another aspect of the present invention, a manufacturing apparatus for a display device is provided, comprising the steps of: forming a pixel circuit including a thin-film transistor and a storage capacitor on a substrate; forming an insulating layer covering the pixel circuit and including at least one contact hole; forming a first bridge electrode layer disposed on the insulating layer and electrically connected to the pixel circuit through the contact hole of the insulating layer; forming a pixel electrode disposed on the first bridge electrode layer; forming a second bridge electrode layer disposed on the first bridge electrode layer such that the pixel electrode is interposed therebetween; forming a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; forming a light-emitting layer on the pixel electrode; and forming a counter electrode on the light-emitting layer; wherein the step of forming the pixel electrode comprises: forming a pixel electrode material layer; and patterning the pixel electrode material layer such that the pixel electrode does not overlap with the contact hole of the insulating layer on a plane.

[0028] According to the present embodiment, the pixel electrode includes a reflective film containing metal, and the first bridge electrode layer can come into contact with the lower surface of the reflective film of the pixel electrode.

[0029] According to the present embodiment, the pixel electrode further comprises a conductive film located on the reflective film and including a transparent conductive oxide, and the second bridge electrode layer may be in contact with the upper surface of the conductive film of the pixel electrode.

[0030] Other aspects, features, and advantages other than those described above will become clear from the following specific details, claims, and drawings for implementing the invention.

[0031] These general and specific aspects may be implemented using a system, method, computer program, or any combination of a system, method, or computer program. Effects of the invention

[0032] According to one embodiment of the present invention as described above, a display device and a method for manufacturing the same can be realized by reducing the area of ​​the pixel electrode through a bridge electrode that electrically connects the pixel circuit and the pixel electrode, thereby reducing the external light reflectance on the surface of the display device. Of course, the scope of the present invention is not limited by this effect. Brief explanation of the drawing

[0033] FIG. 1 is a plan view schematically illustrating a display device according to one embodiment of the present invention. FIG. 2 is an equivalent circuit diagram of any one pixel circuit included in a display device according to one embodiment of the present invention. FIG. 3 is a plan view schematically illustrating some components of a display device according to one embodiment of the present invention. FIG. 4 is a cross-sectional view schematically illustrating a part of a display device according to one embodiment of the present invention. FIG. 5 is a cross-sectional view schematically illustrating a part of a display device according to another embodiment of the present invention. FIG. 6 is a cross-sectional view schematically illustrating a part of a display device according to another embodiment of the present invention. FIG. 7 is a cross-sectional view schematically illustrating a part of a display device according to another embodiment of the present invention. FIG. 8 is a cross-sectional view schematically illustrating a part of a display device according to another embodiment of the present invention. FIG. 9 is a cross-sectional view schematically illustrating a part of a display device according to another embodiment of the present invention. FIGS. 10a to 10j are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to one embodiment of the present invention. FIGS. 11a to 11f are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to another embodiment of the present invention. FIGS. 12a to 12e are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to another embodiment of the present invention. Specific details for implementing the invention

[0034] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various forms.

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the drawings, identical or corresponding components are given the same reference numerals, and redundant descriptions thereof will be omitted.

[0036] In the following embodiments, terms such as first, second, etc. are used not in a limiting sense, but for the purpose of distinguishing one component from another component.

[0037] In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0038] In the following embodiments, terms such as "include" or "have" mean that the features or components described in the specification are present, and do not preclude the possibility that one or more other features or components may be added.

[0039] In the following embodiments, when a part such as a film, region, or component is described as being on or above another part, it includes not only cases where it is directly on top of another part, but also cases where another film, region, or component is interposed in between.

[0040] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, so the present invention is not necessarily limited to what is illustrated.

[0041] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described consecutively may be performed substantially simultaneously or proceed in the reverse order of the description.

[0042] In this specification, "A and / or B" indicates the case where it is A, B, or both A and B. And, "at least one of A and B" indicates the case where it is A, B, or both A and B.

[0043] In the following embodiments, when a membrane, region, component, etc. is described as being connected, it includes cases where the membrane, region, or component is directly connected, or / or cases where other membranes, regions, or components are interposed between the membranes, regions, or components to be indirectly connected. For example, when a membrane, region, component, etc. is described as being electrically connected in this specification, it indicates cases where the membrane, region, or component, etc. are directly electrically connected, and / or cases where other membranes, regions, or components are interposed between them to be indirectly electrically connected.

[0044] The x-axis, y-axis, and z-axis are not limited to the three axes of an orthogonal coordinate system but can be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they may also refer to different directions that are not orthogonal to each other.

[0045] FIG. 1 is a plan view schematically illustrating a display device according to one embodiment of the present invention.

[0046] Referring to FIG. 1, a display device (1) may include a display area (DA) and a peripheral area (PA) located outside the display area (DA). The display device (1) may provide an image through an array of pixels (PX) in the display area (DA). A pixel (PX) may be defined as a light-emitting area in which a light-emitting element driven by a pixel circuit emits light. That is, an image may be provided by the light emitted by the light-emitting element through the pixel (PX). In the display area (DA), not only light-emitting elements and pixel circuits but also various signal lines and power lines electrically connected to the pixel circuits may be arranged.

[0047] The peripheral area (PA) is an area that does not provide an image and can surround the display area (DA) entirely or partially. Various wiring, driving circuits, etc., for providing electrical signals or power to the display area (DA) may be placed in the peripheral area (PA).

[0048] The display device (1) may have a roughly rectangular shape when viewed in a direction perpendicular to one side. For example, the display device (1) may have an overall rectangular planar shape, having, for example, a short side extended in the x-direction and, for example, a long side extended in the y-direction, as shown in FIG. 1. The corner where the short side in the x-direction and the long side in the y-direction meet may have a right angle shape or a round shape with a certain curvature as shown in FIG. 1. Of course, the planar shape of the display device (1) is not limited to a rectangle and may have various shapes such as polygons like triangles, circles, ellipses, and irregular shapes.

[0049] In FIG. 1, a display device (1) having a flat display surface is illustrated, but the present invention is not limited thereto. In another embodiment, the display device (1) may include a three-dimensional display surface or a curved display surface. When the display device (1) includes a three-dimensional display surface, the display device (1) includes a plurality of display areas indicating different directions, and, for example, may include a polygonal columnar display surface. In another embodiment, when the display device (1) includes a curved display surface, the display device (1) can be implemented in various forms such as a flexible, foldable, or rollable display device.

[0050] Meanwhile, for the convenience of explanation, the following description describes the case where the display device (1) is used in a smartphone, but the display device (1) of the present invention is not limited thereto. The display device (1) can be used as a display screen for various products such as televisions, laptops, monitors, billboards, and the Internet of Things (IOT), as well as portable electronic devices such as mobile phones, smartphones, tablet personal computers, mobile communication terminals, electronic notebooks, e-books, PMPs (portable multimedia players), navigation systems, and UMPCs (Ultra Mobile PCs). In addition, the display device (1) according to one embodiment can be used in wearable devices such as smart watches, watch phones, glasses-type displays, and head-mounted displays (HMDs). Additionally, the display device (1) according to one embodiment can be used as a display screen placed on the back of the front seat, as a CID (Center Information Display) placed on the center fascia or dashboard of a vehicle, as a room mirror display replacing the side mirror of a vehicle, as entertainment for the rear seat of a vehicle.

[0051] Additionally, although the following description describes the display device (1) as including an Organic Light Emitting Diode (OLED) as a light-emitting element, the display device (1) of the present invention is not limited thereto. As another embodiment, the display device (1) may be a light-emitting display device including an inorganic light-emitting diode, i.e., an inorganic light-emitting display. As yet another embodiment, the display device (1) may be a quantum dot light-emitting display.

[0052] FIG. 2 is an equivalent circuit diagram of any one pixel circuit included in a display device according to one embodiment of the present invention.

[0053] Referring to FIG. 2, the pixel circuit (PC) may include a plurality of thin film transistors and a storage capacitor and may be electrically connected to an organic light-emitting diode (OLED). In one embodiment, the pixel circuit (PC) may include a driving thin film transistor (T1), a switching thin film transistor (T2), and a storage capacitor (Cst).

[0054] The switching thin-film transistor (T2) is connected to the scan line (SL) and the data line (DL), and can transmit a data signal or data voltage input from the data line (DL) to the driving thin-film transistor (T1) based on a scan signal or switching voltage input from the scan line (SL). The storage capacitor (Cst) is connected to the switching thin-film transistor (T2) and the driving voltage line (PL), and can store a voltage corresponding to the difference between the voltage received from the switching thin-film transistor (T2) and the first power supply voltage (ELVDD) supplied to the driving voltage line (PL).

[0055] The driving thin-film transistor (T1) is connected to the driving voltage line (PL) and the storage capacitor (Cst), and can control the driving current flowing from the driving voltage line (PL) to the organic light-emitting diode (OLED) in correspondence with the voltage value stored in the storage capacitor (Cst). The counter electrode (e.g., cathode) of the organic light-emitting diode (OLED) can receive a second power supply voltage (ELVSS). The organic light-emitting diode (OLED) can emit light having a predetermined brightness by the driving current.

[0056] Although a case in which the pixel circuit (PC) includes two thin-film transistors and one storage capacitor has been described, the present invention is not limited thereto. For example, the pixel circuit (PC) may include three or more thin-film transistors and / or two or more storage capacitors. In one embodiment, the pixel circuit (PC) may include seven thin-film transistors and one storage capacitor. The number of thin-film transistors and storage capacitors may vary depending on the design of the pixel circuit (PC). However, for the convenience of the following description, the case in which the pixel circuit (PC) includes two thin-film transistors and one storage capacitor will be described.

[0057] FIG. 3 is a schematic plan view illustrating some components of a display device according to an embodiment of the present invention, focusing on the display area of ​​the display device.

[0058] Referring to FIG. 3, a plurality of pixels (PX) may be arranged in a display area (DA). A pixel (PX) may be defined as a light-emitting region in which a light-emitting element, such as an organic light-emitting diode, emits light. In this specification, a pixel (PX) may be a sub-pixel that emits red, green, blue, or white light.

[0059] In one embodiment, a plurality of pixels (PX) may include a red pixel (Pr), a green pixel (Pg), and a blue pixel (Pb). Each of the red pixel (Pr), the green pixel (Pg), and the blue pixel (Pb) may emit red light, green light, and blue light, respectively, and the red light may be light in a wavelength band of 580 nm to 780 nm, the green light may be light in a wavelength band of 495 nm to 580 nm, and the blue light may be light in a wavelength band of 400 nm to 495 nm. In another embodiment, the plurality of pixels (PX) may further include a white pixel (not shown).

[0060] A plurality of pixel electrodes (210), a pixel defining film (120), a plurality of light-emitting layers (not shown), and a counter electrode (not shown) may be arranged in the display area (DA). The plurality of pixel electrodes (210) may be arranged spaced apart from each other on a plane. Since the plurality of pixel electrodes (210) may be arranged below the pixel defining film (120), FIG. 3 shows the edges of each pixel electrode (210) as dotted lines.

[0061] The pixel defining film (120) may include an opening (120OP) that exposes the central portion of each of the plurality of pixel electrodes (210). Light-emitting layers that emit light of a predetermined color may each be located within the openings (120OP) of the pixel defining film (120). A counter electrode may be disposed on the pixel defining film (120) and the light-emitting layers and may be formed integrally across the plurality of pixel electrodes (210). The stacked structure of the pixel electrode (210), the light-emitting layer, and the counter electrode may form a single organic light-emitting diode.

[0062] One opening (120OP) of the pixel defining film (120) corresponds to one organic light-emitting diode and can form one light-emitting region. That is, each opening (120OP) of the pixel defining film (120) can define one pixel (PX).

[0063] In one embodiment of the present invention, a plurality of bridge electrodes (BE) may be arranged in a display area (DA). Since the plurality of bridge electrodes (BE) are also arranged on the lower part of the pixel defining film (120) similarly to the pixel electrode (210), FIG. 3 shows the edges of each bridge electrode (BE) as dotted lines.

[0064] Each bridge electrode (BE) can correspond to each pixel electrode (210). Here, the two components being 'correspond' to each other may mean that the two components overlap each other when viewed in a direction perpendicular to one side of the display device (1). The bridge electrode (BE) can be electrically connected to the corresponding pixel electrode (210), for example, and can come into direct contact with the pixel electrode (210).

[0065] In one embodiment, the bridge electrode (BE) may include a portion extending along one direction (e.g., +x direction, -x direction, +y direction, or -y direction) from the corresponding pixel electrode (210) on a plane. The extended portion may overlap with the contact hole (CH) on the plane. That is, the bridge electrode (BE) may be positioned to overlap with the contact hole (CH). The contact hole (CH) may be a through hole defined by an insulating layer placed below the bridge electrode (BE), and the bridge electrode (BE) may be electrically connected to the pixel circuit (PC, see FIG. 2) located below it through the contact hole (CH). Thus, the bridge electrode (BE) can electrically connect the pixel electrode (210) and the pixel circuit (PC).

[0066] On the other hand, as shown in FIG. 3, if the contact hole (CH) does not overlap with the opening (120OP) of the pixel defining film (120) on a plane, the pixel electrode (210) may not overlap with the contact hole (CH) on a plane.

[0067] In one embodiment, the area of ​​the bridge electrode (BE) on a plane may be larger than the area of ​​the pixel electrode (210). As described below with reference to FIG. 4, the pixel electrode (210) may include a reflective film containing metal. The reflective film (212) can reflect external light incident toward the display device (1), and the reflected external light can be seen by the user. As the area of ​​the pixel electrode (210) increases, the external light reflectivity increases, and thus the visibility of external light may deteriorate. Therefore, to improve this, one embodiment of the present invention employs a bridge electrode (BE) containing a transparent conductive oxide, thereby reducing the area of ​​the pixel electrode (210) and minimizing the external light reflectivity.

[0068] Meanwhile, Figure 3 illustrates multiple pixels (PX) arranged in an RGBG type (so-called pentile® structure), but it is obvious that they can be arranged in various shapes such as a stripe type.

[0069] FIG. 4 is a schematic cross-sectional view illustrating a part of a display device according to one embodiment of the present invention, which may correspond to a cross-section of the display device taken along the line IV-IV' of FIG. 3.

[0070] Referring to FIG. 4, the display device (1) includes a light-emitting element (200), and the light-emitting element (200) can be electrically connected to a pixel circuit (PC) so that its light emission can be controlled. In one embodiment, the light-emitting element (200) may be an organic light-emitting diode (OLED). Below, the stacked structure of the pixel circuit (PC) and the light-emitting element (200) will be described.

[0071] First, the display device (1) may include a substrate (100). The substrate (100) may include a glass material or a polymer resin. In one embodiment, the substrate (100) may include a plurality of sublayers. The plurality of sublayers may have a structure in which organic layers and inorganic layers are alternately stacked. When the substrate (100) includes a polymer resin, it may include polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate.

[0072] A buffer layer (111) may be disposed on the substrate (100). The buffer layer (111) may be formed to prevent impurities from penetrating into the semiconductor layer (Act) of the thin-film transistor (TFT). In one embodiment, the buffer layer (111) may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may be a single layer or a multilayer containing the aforementioned inorganic insulating material.

[0073] A pixel circuit (PC) may be disposed on the buffer layer (111). For example, the pixel circuit (PC) may be disposed corresponding to each pixel (PX). The pixel circuit (PC) may include a plurality of thin-film transistors (TFTs) and a storage capacitor (Cst). For convenience of illustration, FIG. 4 illustrates a single thin-film transistor (TFT), and this thin-film transistor (TFT) may correspond, for example, to the driving thin-film transistor (T1, see FIG. 2) described above. Although not illustrated in FIG. 4, a switching thin-film transistor (T2, see FIG. 2) included in the pixel circuit (PC) may be electrically connected to the data line (DL) of the pixel circuit (PC).

[0074] A thin-film transistor (TFT) may include a semiconductor layer (Act), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE).

[0075] The semiconductor layer (Act) may include polysilicon, for example. As another example, the semiconductor layer (Act) may include amorphous silicon, oxide semiconductor, organic semiconductor, etc.

[0076] The gate electrode (GE) may include a low-resistance metal material. The gate electrode (GE) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials.

[0077] The gate insulating layer (112) between the semiconductor layer (Act) and the gate electrode (GE) may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. The gate insulating layer (112) may be a single layer or a multilayer containing the aforementioned materials.

[0078] In this embodiment, a top gate type is illustrated in which the gate electrode (GE) is placed on the semiconductor layer (Act) with the gate insulating layer (112) in the middle, but according to other embodiments, the thin-film transistor (TFT) may be a bottom gate type.

[0079] The source electrode (SE) and drain electrode (DE) may, for example, be located on the same layer as the data line (DL) and may contain the same material. The source electrode (SE), drain electrode (DE), and data line (DL) may contain a material with good conductivity. The source electrode (SE) and drain electrode (DE) may contain a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer containing the above materials. In one embodiment, the source electrode (SE), drain electrode (DE), and data line (DL) may be formed as a multilayer of Ti / Al / Ti.

[0080] A storage capacitor (Cst) may include a lower electrode (CE1) and an upper electrode (CE2) that overlap each other with a first interlayer insulating layer (113) in between. The storage capacitor (Cst) may overlap with a thin-film transistor (TFT). In this regard, FIG. 4 illustrates that the gate electrode (GE) of the thin-film transistor (TFT) is the lower electrode (CE1) of the storage capacitor (Cst). In another embodiment, the storage capacitor (Cst) may not overlap with the thin-film transistor (TFT). The storage capacitor (Cst) may be covered by a second interlayer insulating layer (114). The upper electrode (CE2) of the storage capacitor (Cst) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials.

[0081] The first interlayer insulating layer (113) and the second interlayer insulating layer (114) may include inorganic insulating materials such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, etc. The first interlayer insulating layer (113) and the second interlayer insulating layer (114) may be a single layer or a multilayer containing the aforementioned materials.

[0082] The thin-film transistor (TFT) and storage capacitor (Cst) can be covered by a first organic insulating layer (115). The upper surface of the first organic insulating layer (115) may include a roughly flat surface.

[0083] Although not shown in FIG. 4, a third interlayer insulating layer (not shown) may be further disposed below the first organic insulating layer (115). The third interlayer insulating layer may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride.

[0084] A contact metal layer (CM) may be disposed on the first organic insulating layer (115). The contact metal layer (CM) may include a material with good conductivity. The contact metal layer (CM) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multilayer or single layer including the above materials. In one embodiment, the contact metal layer (CM) may be formed as a multilayer of Ti / Al / Ti.

[0085] The contact metal layer (CM) can be placed between the thin-film transistor (TFT) of the pixel circuit (PC) and the bridge electrode (BE) described later, and can be electrically connected to the thin-film transistor (TFT) and the bridge electrode (BE), respectively. That is, the bridge electrode (BE) can be electrically connected to the thin-film transistor (TFT) of the pixel circuit (PC) through the contact metal layer (CM). In some embodiments, the contact metal layer (CM) may be omitted, and in such cases, the bridge electrode (BE) may be directly connected to the thin-film transistor (TFT) of the pixel circuit (PC).

[0086] A second organic insulating layer (117) covering a pixel circuit (PC) may be disposed on the first organic insulating layer (115). The second organic insulating layer (117) may provide a flat upper surface for a light-emitting element (200) disposed thereon.

[0087] The first organic insulating layer (115) and the second organic insulating layer (117) may include organic insulating materials such as general-purpose polymers like polymethylmethacrylate (PMMA) or polystyrene (PS), polymer derivatives having phenolic groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorine polymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof. In one embodiment, the first organic insulating layer (115) and the second organic insulating layer (117) may include polyimide.

[0088] A bridge electrode (BE) may be disposed on the second organic insulating layer (117). The bridge electrode (BE) may be electrically connected to a pixel circuit (PC) through a contact hole (CH) formed in the second organic insulating layer (117). The bridge electrode (BE) may include a transparent conductive oxide. This prevents the reflection of external light from the bridge electrode (BE). For example, the bridge electrode (BE) may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0089] A light-emitting element (200) may be disposed on the second organic insulating layer (117). The light-emitting element (200) may be an organic light-emitting diode (OLED) and may emit light of, for example, red, green, or blue. The light-emitting element (200) may include a pixel electrode (210), an intermediate layer (220), and a counter electrode (230). The pixel electrode (210) may be disposed on the second organic insulating layer (117), and the counter electrode (230) may be disposed on the pixel electrode (210). The intermediate layer (220) may include a light-emitting layer and may be disposed between the pixel electrode (210) and the counter electrode (230).

[0090] In one embodiment, the pixel electrode (210) may include a lower conductive film (211) comprising a transparent conductive oxide, and a reflective film (212) disposed on the lower conductive film (211) and comprising a metal. For example, the lower conductive film (211) may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). For example, the reflective film (212) may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof.

[0091] A pixel defining film (120) may be disposed on the pixel electrode (210). The pixel defining film (120) defines an opening (120OP) that overlaps with a part (e.g., the central part) of the pixel electrode (210) and may cover the edge of the pixel electrode (210). The opening (120OP) of the pixel defining film (120) may define a light-emitting region of light emitted from the light-emitting element (200). For example, the size / width of the opening (120OP) may correspond to the size / width of the light-emitting region. Accordingly, the size and / or width of the pixel (PX) may depend on the size and / or width of the opening (120OP) of the corresponding pixel defining film (120).

[0092] The pixel defining film (120) may include an organic insulating material. Alternatively, the pixel defining film (120) may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide. Alternatively, the pixel defining film (120) may include an organic insulating material and an inorganic insulating material.

[0093] In one embodiment, the pixel defining film (120) may further include a light-blocking material. For example, the light-blocking material may include a metallic material such as chromium (Cr) or molybdenum (Mo) and its oxide, or an organic material mixed with black ink, pigment and / or dye, etc. Through this, a portion of the external light incident on the display device (1) is absorbed by the pixel defining film (120), and thus the external light reflectivity can be reduced.

[0094] An intermediate layer (220) may be disposed on the pixel electrode (210). For example, the intermediate layer (220) may be located within an opening (120OP) of the pixel defining film (120). The intermediate layer (220) includes a light-emitting layer, and the light-emitting layer may include a polymer or low-molecular-weight organic material that emits light of a predetermined color. For example, the light-emitting layer may emit red light, green light, or blue light.

[0095] In some embodiments, the intermediate layer (220) may include a first common layer (not shown) and / or a second common layer (not shown) respectively disposed above and / or below the light-emitting layer. The first and second common layers may each be single-layer or multi-layer. For example, if the first common layer is formed of a polymer material, the first common layer may be a single-layer hole transport layer (HTL) and may be formed of polyethylene dihydroxythiophene (PEDOT) or polyaniline (PANI). If the first common layer is formed of a low-molecular-weight material, the first common layer may include a multi-layer structure of a hole injection layer (HIL) and a hole transport layer (HTL). The second common layer may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0096] A counter electrode (230) may be disposed on the intermediate layer (220). The counter electrode (230) may be made of a conductive material with a low work function. For example, the counter electrode (230) may include a (semi)transparent layer comprising silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or alloys thereof. Alternatively, the counter electrode (230) may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi)transparent layer comprising the aforementioned materials.

[0097] The counter electrode (230) can be formed integrally across a plurality of pixel electrodes (210). The counter electrode (230) can cover the display area (DA, see FIG. 1). In addition, the counter electrode (230) can also be located in a part of the surrounding area (PA, see FIG. 1).

[0098] According to one embodiment of the present invention, a light-emitting element (200) can be electrically connected to a pixel circuit (PC) through a bridge electrode (BE). For example, the pixel electrode (210) of the light-emitting element (200) is electrically connected to the bridge electrode (BE), and the bridge electrode (BE) can be electrically connected to the pixel circuit (PC) through a contact hole (CH) formed in the second organic insulating layer (117).

[0099] In one embodiment, the pixel electrode (210) may not overlap with the contact hole (CH) of the second organic insulating layer (117) in a planar plane. On the other hand, the bridge electrode (BE) may overlap with the contact hole (CH) of the second organic insulating layer (117) in a planar plane. Additionally, at least a portion of the bridge electrode (BE) may overlap with the opening (120OP) of the pixel defining film (120) in a planar plane.

[0100] In one embodiment, at least a portion of the bridge electrode (BE) may be located on the upper surface of the pixel electrode (210). For example, at least a portion of the bridge electrode (BE) may be in contact with the upper surface of the pixel electrode (210), i.e., the upper surface of the reflective film (212). In this case, at least a portion of the bridge electrode (BE) may be interposed between the pixel electrode (210) and the intermediate layer (220).

[0101] As a comparative example, a pixel electrode (210) equipped with a reflective film (212) is positioned to overlap with an opening (120OP) of a pixel defining film (120) to form a pixel (PX), and may also be extended to overlap with a contact hole (CH) formed in a second organic insulating layer (117) below the pixel electrode (210) for electrical connection with a pixel circuit (PC). In this case, the planar area of ​​the pixel electrode (210) is relatively increased, and thus may cause an increase in external light reflectivity. For example, external light reflected from the pixel electrode (210) passes through a color filter (CF) positioned above it and is then visible to the user, and the user may perceive the reflected light as light of a specific color. If the external light reflectivity increases, the problem of the user perceiving the reflected light of a specific color may become more significant.

[0102] However, according to one embodiment of the present invention, the pixel electrode (210) may overlap with the opening (120OP) of the pixel defining film (120) but may not overlap with the contact hole (CH) of the second organic insulating layer (117). Instead, a bridge electrode (BE) may electrically connect the pixel electrode (210) and the pixel circuit (PC). That is, a bridge electrode (BE) comprising a transparent conductive oxide may be electrically connected to the pixel electrode (210) and may also be electrically connected to the pixel circuit (PC) through the contact hole (CH) of the second organic insulating layer (117). Through this, the area of ​​the pixel electrode (210) can be minimized, and since the bridge electrode (BE) does not substantially contribute to external light reflection, the external light reflectivity of the display device (1) can be minimized.

[0103] Meanwhile, although not shown in FIG. 4, a step may occur on the upper surface of the pixel defining film (120) due to the contact hole (CH) of the second organic insulating layer (117). That is, an irregularity may be formed on the upper surface of the pixel defining film (120) at a position corresponding to the contact hole (CH) of the second organic insulating layer (117), or the pixel defining film (120) may not be formed with a sufficient thickness in the area of ​​the contact hole (CH). The irregularity and insufficient thickness of the pixel defining film (120) may increase the external light reflectivity. Therefore, the pixel electrode (210) according to one embodiment of the present invention is positioned so as not to overlap with the contact hole (CH), thereby preventing an increase in the external light reflectivity in the area of ​​the contact hole (CH).

[0104] Meanwhile, an encapsulation layer (300) may be disposed on the light-emitting element (200). Since the light-emitting element (200) can be easily damaged by moisture or oxygen from the outside, the encapsulation layer (300) can cover and protect the light-emitting element (200). The encapsulation layer (300) covers the display area (DA, see FIG. 1) and may extend to the outside of the display area (DA). The encapsulation layer (300) includes at least one organic layer and at least one inorganic layer. For example, the encapsulation layer (300) may include a first inorganic encapsulation layer (310), an organic encapsulation layer (320), and a second inorganic encapsulation layer (330).

[0105] The first inorganic sealing layer (310) covers the counter electrode (230) and may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. Although not illustrated, other layers such as a capping layer may be interposed between the first inorganic sealing layer (310) and the counter electrode (230) as needed.

[0106] The organic encapsulation layer (320) covers the first inorganic encapsulation layer (310), and unlike the first inorganic encapsulation layer (310), the upper surface may be approximately flat. Specifically, the upper surface of the organic encapsulation layer (320) may be approximately flat in the display area (DA). The organic encapsulation layer (320) may include a polymer-based material. Polymer-based materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. In one embodiment, the organic encapsulation layer (320) may include acrylate. The organic encapsulation layer (320) may be formed by curing a monomer or by applying a polymer. The organic encapsulation layer (320) may have transparency.

[0107] The second inorganic sealing layer (330) covers the organic sealing layer (320) and may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0108] Even if a crack occurs within the encapsulation layer (300) through the aforementioned multilayer structure, the crack can be prevented from connecting between the first inorganic encapsulation layer (310) and the organic encapsulation layer (320) or between the organic encapsulation layer (320) and the second inorganic encapsulation layer (330). This prevents or minimizes the formation of a path for moisture or oxygen from the outside to penetrate from the display area (DA) into the light-emitting element (200).

[0109] According to one embodiment, a black matrix (BM) and a color filter (CF) may be disposed on the encapsulation layer (300). The black matrix (BM) absorbs or blocks light incident from the outside, and the color filter (CF) may selectively allow light emitted from the intermediate layer (220) to pass through according to the wavelength band (i.e., according to the color of the light).

[0110] The black matrix (BM) may have a hole (BM-H) that overlaps with the opening (120OP) of the pixel defining film (120), and light emitted from the light-emitting element (200) may be output to the outside through the hole (BM-H). The hole (BM-H) may be filled by a color filter (CF).

[0111] The black matrix (BM) may include a light-blocking material, such as a metallic material and its oxide, such as chromium (Cr) or molybdenum (Mo), or may include an organic material mixed with black ink, pigment and / or dye, etc.

[0112] In this way, when a black matrix (140) is placed on the encapsulation layer (300), external light reflection can be sufficiently prevented without a polarizing layer that generally has a relatively thick thickness, thereby improving flexibility and reducing the thickness of the display device (1). In addition, since it has a higher transmittance than the polarizing layer, contrast and light efficiency can be improved.

[0113] The color filter (CF) comprises a color-producing substance and an organic material in which the color-producing substance is dispersed, wherein the color-producing substance may be a general pigment or dye and the organic material may be a general dispersant. For example, when visible light having a predetermined color, such as red, green, and blue light, is emitted from a light-emitting element (200), the color filter (CF) can improve the optical characteristics (e.g., color purity, etc.) of such visible light. For another example, when white light is emitted from a light-emitting element (200), the color filter (CF) can selectively pass only light of a predetermined wavelength band and absorb light of the remaining wavelength bands, thereby causing each pixel (PX) to emit one of red, green, or blue light.

[0114] Meanwhile, although not illustrated, a touch sensing layer (not illustrated) may be interposed between the encapsulation layer (300) and the black matrix (BM). For example, the touch sensing layer may be formed directly on top of the encapsulation layer (300), in which case the adhesive layer may not be interposed between the touch sensing layer and the encapsulation layer (300). The touch sensing layer may acquire coordinate information based on external input, such as a touch event. The touch sensing layer may include, for example, a sensing electrode and signal lines connected to the sensing electrode. The touch sensing layer may detect external input using a mutual capping method or a self-capping method.

[0115] Additionally, although not shown, a protective layer (not shown) containing an organic insulator may be disposed on the black matrix (BM) and the color filter (CF), and a cover window (not shown) may be disposed on the protective layer. The protective layer and the cover window serve to protect the light-emitting element (200) from external impact. In one embodiment, the cover window may be made of glass or plastic, and may be ultra-thin reinforced glass with strength enhanced by methods such as chemical strengthening or thermal strengthening.

[0116] FIG. 5 is a schematic cross-sectional view illustrating a part of a display device according to another embodiment of the present invention. Descriptions of components that are identical or substantially identical to those described above with reference to FIG. 4 are omitted, and the following description focuses on the differences.

[0117] Referring to FIG. 5, the pixel electrode (210) may further include an upper conductive film (213) disposed on a reflective film (212). In one embodiment, the upper conductive film (213) may include a transparent conductive oxide. For example, the upper conductive film (213) may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0118] That is, the pixel electrode (210) may include a lower conductive film (211), a reflective film (212) disposed on the lower conductive film (211), and an upper conductive film (213) disposed on the reflective film (212). In this case, at least a portion of the bridge electrode (BE) may come into contact with the upper surface of the upper conductive film (213) of the pixel electrode (210). When patterning the bridge electrode (BE), the upper conductive film (213) can protect the reflective film (212) of the pixel electrode (210), thereby preventing the reflective film (212) from being oxidized or damaged.

[0119] FIG. 6 is a schematic cross-sectional view illustrating a part of a display device according to another embodiment of the present invention. Descriptions of components that are identical or substantially identical to those described above with reference to FIG. 4 are omitted, and the following description will focus on the differences.

[0120] Referring to FIG. 6, the pixel electrode (210) may include a reflective film (212) containing a metal and an upper conductive film (213) disposed on the reflective film (212) and containing a transparent conductive oxide. As previously described, the reflective film (212) of the pixel electrode (210) may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. In one embodiment, the upper conductive film (213) of the pixel electrode (210) may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0121] In one embodiment, the pixel electrode (210) may be placed on the bridge electrode (BE). That is, the bridge electrode (BE) is placed below the pixel electrode (210), and, for example, at least a portion of the bridge electrode (BE) may be interposed between the second organic insulating layer (117) and the pixel electrode (210). In one embodiment, at least a portion of the bridge electrode (BE) may be in contact with the lower surface of the pixel electrode (210), for example, with the lower surface of the reflective film (212).

[0122] FIG. 7 is a schematic cross-sectional view illustrating a part of a display device according to another embodiment of the present invention. Descriptions of components that are identical or substantially identical to those described above with reference to FIG. 4 and FIG. 6 are omitted, and the following description will focus on the differences.

[0123] Referring to FIG. 7, the pixel electrode (210) may include a lower conductive film (211) comprising a transparent conductive oxide, a reflective film (212) disposed on the lower conductive film (211) and comprising a metal, and an upper conductive film (213) disposed on the reflective film (212) and comprising a transparent conductive oxide.

[0124] As previously mentioned, in one embodiment, the lower conductive film (211) and the upper conductive film (213) of the pixel electrode (210) may each include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0125] In addition, as previously stated, the reflective film (212) of the pixel electrode (210) may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof.

[0126] In this case, at least a portion of the bridge electrode (BE) interposed between the second organic insulating layer (117) and the pixel electrode (210) is in contact with the lower surface of the pixel electrode (210), for example, and may be in contact with the lower surface of the lower conductive film (211).

[0127] FIG. 8 is a schematic cross-sectional view illustrating a part of a display device according to another embodiment of the present invention. Descriptions of components that are identical or substantially identical to those described above with reference to FIG. 4 are omitted, and the following description will focus on the differences.

[0128] Referring to FIG. 8, the bridge electrode (BE) may be provided in a multilayer structure. For example, the bridge electrode (BE) may include a first bridge electrode layer (BE1) on the second organic insulating layer (117) and a second bridge electrode layer (BE2) disposed on the first bridge electrode layer (BE1).

[0129] In one embodiment, the first bridge electrode layer (BE1) and the second bridge electrode layer (BE2) may each include a transparent conductive oxide. For example, the first bridge electrode layer (BE1) and the second bridge electrode layer (BE2) may each include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO).

[0130] In one embodiment, the pixel electrode (210) may be interposed between the first bridge electrode layer (BE1) and the second bridge electrode layer (BE2) of the bridge electrode (BE). That is, the first bridge electrode layer (BE1) may be interposed between the second organic insulating layer (117) and the pixel electrode (210), and the second bridge electrode layer (BE2) may be disposed on the pixel electrode (210). For example, the first bridge electrode layer (BE1) and the second bridge electrode layer (BE2) may each come into contact with the lower surface and the upper surface of the pixel electrode (210).

[0131] In one embodiment, the pixel electrode (210) may be provided with a single-layer structure, for example, the pixel electrode (210) may include a reflective film containing metal. In this case, the first bridge electrode layer (BE1) may come into contact with the lower surface of the reflective film of the pixel electrode (210).

[0132] FIG. 9 is a schematic cross-sectional view illustrating a part of a display device according to another embodiment of the present invention. Descriptions of components that are identical or substantially identical to those described above with reference to FIG. 4 and FIG. 8 are omitted, and the following description will focus on the differences.

[0133] Referring to FIG. 9, the pixel electrode (210) may be provided with a multilayer structure and may include, for example, a reflective film (212) and a conductive layer disposed above and / or below the reflective film (212). In one embodiment, as shown in FIG. 9, the pixel electrode (210) may include a reflective film (212) containing metal and an upper conductive film (213) located on the reflective film (212) and containing a transparent conductive oxide. In this case, the second bridge electrode layer (BE2) of the bridge electrode (BE) may come into contact with the upper surface of the upper conductive film (213) of the pixel electrode (210). Through this, when patterning the first bridge electrode layer (BE1), the upper conductive film (213) can protect the reflective film (212) of the pixel electrode (210), thereby preventing the reflective film (212) from being oxidized or damaged.

[0134] Of course, although not shown in FIG. 9, a lower conductive film (not shown) containing a transparent conductive oxide may be further disposed on the lower part of the reflective film (212) of the pixel electrode (210).

[0135] FIGS. 10a to 10j are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to an embodiment of the present invention. The display device manufactured according to the present method may correspond to the display device of FIG. 4, and since the same reference numerals are assigned to the same components, redundant descriptions will be omitted.

[0136] Referring to FIG. 10a, a pixel circuit (PC) including a thin-film transistor (TFT) and a storage capacitor (Cst) can be formed on a substrate (100). To form the pixel circuit (PC), various insulating layers, semiconductor layers, and electrode layers can be formed on the substrate (100). For example, after forming various material layers through a coating process or a deposition process, the various material layers can be patterned through a photolithography process and an etching process to form the various insulating layers, semiconductor layers, and electrode layers.

[0137] Here, for the coating process, methods such as spin coating may be used, and for the deposition process, chemical vapor deposition (CVD) methods such as thermochemical vapor deposition (TCVD), plasma deposition (PECVD), and atmospheric pressure chemical vapor deposition (APCVD), or physical vapor deposition (PVD) methods such as thermal evaporation, sputtering, and electron beam deposition (e-beam evaporation) may be used.

[0138] FIG. 10a illustrates the formation of a buffer layer (111) on a substrate (100), starting from the formation of a contact metal layer (CM) on a first organic insulating layer (115).

[0139] Referring to FIG. 10b, a second organic insulating layer (117) can be formed that covers a pixel circuit (PC) and includes at least one contact hole (CH). For example, a second organic insulating layer material layer can be formed on a first organic insulating layer (115) through a coating process or a deposition process, and then the second organic insulating layer material layer can be patterned through a photolithography process and an etching process to form a second organic insulating layer (117) that includes at least one contact hole (CH).

[0140] Referring to FIG. 10c and FIG. 10d, a pixel electrode (210) can be formed on the second organic insulating layer (117). To do this, first, as shown in FIG. 10c, a pixel electrode material layer (210m) can be formed on the second organic insulating layer (117). In one embodiment, the pixel electrode material layer (210m) may include a lower conductive film material layer (211m) and a reflective film material layer (212m). The pixel electrode material layer (210m) can be formed through a coating process using, for example, spin coating, or a deposition process using a physical vapor deposition (PVD) method such as sputtering or electron beam evaporation.

[0141] Next, as illustrated in FIG. 10d, a pixel electrode material layer (210m) is patterned to form a pixel electrode (210), wherein the pixel electrode material layer (210m) is patterned such that the pixel electrode (210) does not overlap with the contact hole (CH) of the second organic insulating layer (117) on a plane. For example, such patterning can be performed through a photolithography process and an etching process.

[0142] For example, the lower conductive film material layer (211m) and the reflective film material layer (212m) of the pixel electrode material layer (210m) can be patterned together by the same process. The lower conductive film material layer (211m) is patterned to form a lower conductive film (211), and the reflective film material layer (212m) is patterned to form a reflective film (212), so that a pixel electrode (210) including the lower conductive film (211) and the reflective film (212) can be formed. In one embodiment, the lower conductive film (211) comprises a transparent conductive oxide, and the reflective film (212) comprises a metal, as described above.

[0143] Referring to FIG. 10e and FIG. 10f, a bridge electrode (BE) can be formed that is disposed on the second organic insulating layer (117) and electrically connected to a pixel circuit (PC) through at least one contact hole (CH) of the second organic insulating layer (117). To this end, a bridge electrode material layer (BEm) can first be formed on the second organic insulating layer (117) as shown in FIG. 10e. The bridge electrode material layer (BEm) can be formed through a coating process using, for example, spin coating, or a deposition process using a physical vapor deposition (PVD) method such as sputtering or electron beam evaporation.

[0144] Next, as illustrated in FIG. 10f, a bridge electrode material layer (BEm) is patterned to form a bridge electrode (BE), wherein at least a portion of the bridge electrode (BE) overlaps with an opening (120OP, FIG. 4) of a pixel defining film (120, FIG. 4) on a plane. Additionally, the bridge electrode (BE) is patterned so as to overlap with a contact hole (CH) of a second organic insulating layer (117), so that the bridge electrode (BE) can be connected to a pixel circuit (PC) through the contact hole (CH). Such patterning can be performed, for example, through a photolithography process and an etching process. Since the bridge electrode (BE) formed in this way contacts the upper surface of the pixel electrode (210), it can be electrically connected to the pixel electrode (210). In one embodiment, the bridge electrode (BE) comprises a transparent conductive oxide as described above.

[0145] Referring to FIG. 10g, a pixel defining film (120) can be formed that is disposed on a pixel electrode (210) and defines an opening (120OP) that overlaps with a part of the pixel electrode (210). For example, a pixel defining film (120) including the opening (120OP) can be formed by forming a pixel defining film material layer through the aforementioned coating process or deposition process, and then patterning the pixel defining film material layer through a photolithography process and an etching process.

[0146] Referring to FIG. 10h, an intermediate layer (220) can be formed on the pixel electrode (210). For example, the intermediate layer (220) can be formed within the opening (120OP) of the pixel defining film (120). The intermediate layer (220) can be formed by a deposition process, a printing process, etc., and a fine metal mask (FMM) may be used. For example, the intermediate layer (220) can be formed by a deposition process using a chemical vapor deposition method (CVD), such as thermochemical vapor deposition (TCVD), plasma deposition (PECVD), atmospheric pressure chemical vapor deposition (APCVD), or by an inkjet printing process.

[0147] Referring to FIG. 10i, a counter electrode (230) can be formed on an intermediate layer (220). For example, the counter electrode can be formed to cover the intermediate layer (220) and the pixel defining film (120). The counter electrode (230) can be formed entirely over a display area (DA, see FIG. 1). The counter electrode (230) can be formed through a coating process using, for example, spin coating, or a deposition process using a physical vapor deposition (PVD) method such as sputtering or electron beam evaporation.

[0148] Referring to FIG. 10j, a sealing layer (300) comprising a first inorganic sealing layer (310), an organic sealing layer (320), and a second inorganic sealing layer (330) can be formed on a counter electrode (230), and a black matrix (BM) and a color filter (CF), etc. can be formed on the sealing layer (300). Through this, the display device (1) described above with reference to FIG. 4 can be provided.

[0149] Although the method for manufacturing the display device (1) of FIG. 4 has been described so far, it is obvious that other embodiments of the display device can be manufactured through variations of the method. For example, the method for manufacturing the display device described above can be similarly applied to manufacture the display device (1) of FIG. 5. In this case, the pixel electrode material layer (210m) in FIG. 10c may further include an upper conductive film material layer (not shown) on the reflective film material layer (212m). As the upper conductive film material layer of the pixel electrode material layer (210m) is patterned, an upper conductive film (213, see FIG. 5) may be formed. Thus, a pixel electrode (210) comprising a lower conductive film (211), a reflective film (212), and an upper conductive film (213) may be formed. In this case, when a bridge electrode (BE) is formed on the pixel electrode (210), the upper conductive film (213) protects the reflective film (212) and has the advantage of preventing oxidation of the reflective film (212).

[0150] FIGS. 11a to 11f are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to another embodiment of the present invention. The display device manufactured according to the present method may correspond to the display device of FIG. 6, and since the same reference numerals are assigned to the same components, redundant descriptions will be omitted.

[0151] Referring to FIG. 11a, a pixel circuit (PC) including a thin-film transistor (TFT) and a storage capacitor (Cst) can be formed on a substrate (100). Additionally, a second organic insulating layer (117) covering the pixel circuit (PC) and including at least one contact hole (CH) can be formed. FIG. 11a illustrates the formation of the second organic insulating layer (117) starting from the formation of a buffer layer (111) on the substrate (100), and this may be identical to FIG. 10b.

[0152] Referring to FIG. 11b and FIG. 11c, a bridge electrode (BE) can be formed first on the second organic insulating layer (117) prior to the formation of the pixel electrode (210). To this end, as shown in FIG. 11b, a bridge electrode material layer (BEm) can be formed on the second organic insulating layer (117). The bridge electrode material layer (BEm) can be formed through a coating process using, for example, spin coating, or a deposition process using a physical vapor deposition (PVD) method such as sputtering or electron beam evaporation.

[0153] Next, as illustrated in FIG. 11c, a bridge electrode material layer (BEm) is patterned to form a bridge electrode (BE), wherein at least a portion of the bridge electrode (BE) may be patterned such that it overlaps with an opening (120OP, FIG. 6) of a pixel defining film (120, FIG. 6) on a planar surface. Additionally, the bridge electrode (BE) may be patterned so that it overlaps with a contact hole (CH) of a second organic insulating layer (117), thereby allowing the bridge electrode (BE) to be connected to a pixel circuit (PC) through the contact hole (CH). Such patterning may be performed, for example, through a photolithography process and an etching process. In one embodiment, the bridge electrode (BE) comprises a transparent conductive oxide as described above.

[0154] Referring to FIG. 11d and FIG. 11e, a pixel electrode (210) can be formed on a bridge electrode (BE). To do this, first, as shown in FIG. 11d, a pixel electrode material layer (210m) can be formed on a second organic insulating layer (117). In one embodiment, the pixel electrode material layer (210m) may include a reflective film material layer (212m) and an upper conductive film material layer (213m) on the reflective film material layer (212m). The pixel electrode material layer (210m) can be formed through a coating process using, for example, spin coating, or a deposition process using a physical vapor deposition (PVD) method such as sputtering or electron beam evaporation.

[0155] Next, as illustrated in FIG. 11e, a pixel electrode material layer (210m) is patterned to form a pixel electrode (210), wherein the pixel electrode material layer (210m) is patterned such that the pixel electrode (210) does not overlap with the contact hole (CH) of the second organic insulating layer (117) on a plane. For example, such patterning can be performed through a photolithography process and an etching process.

[0156] For example, the reflective film material layer (212m) and the upper conductive film material layer (213m) of the pixel electrode material layer (210m) can be patterned together by the same process. The reflective film material layer (212m) is patterned to form a reflective film (212), and the upper conductive film material layer (213m) is patterned to form an upper conductive film (213), so that a pixel electrode (210) including the reflective film (212) and the upper conductive film (213) can be formed. In one embodiment, the upper conductive film (213) includes a transparent conductive oxide, and the reflective film (212) includes a metal, as described above.

[0157] Referring to FIG. 11f, a pixel defining film (120) can be formed that is disposed on a pixel electrode (210) and defines an opening (120OP) that overlaps with a part of the pixel electrode (210). Subsequently, an intermediate layer (220) on the pixel electrode (210) and a counter electrode (230) on the intermediate layer (220) can be formed. An encapsulation layer (300) comprising a first inorganic encapsulation layer (310), an organic encapsulation layer (320), and a second inorganic encapsulation layer (330) can be formed on the counter electrode (230), and a black matrix (BM) and a color filter (CF), etc., can be formed on the encapsulation layer (300). The method of forming the pixel defining film (120), intermediate layer (220), counter electrode (230), encapsulation layer (300), black matrix (BM), and color filter (CF) may be the same as previously described with reference to FIGS. 10f to 10j. Through this, the display device (1) described above with reference to FIG. 6 can be provided.

[0158] Although the method for manufacturing the display device (1) of FIG. 5 has been described so far, it is obvious that other embodiments of the display device can be manufactured through variations of the method. For example, the method for manufacturing the display device described above can be similarly applied to manufacture the display device (1) of FIG. 7. In this case, the pixel electrode material layer (210m) in FIG. 11d may further include a lower conductive film material layer (not shown) below the reflective film material layer (212m). As the lower conductive film material layer of the pixel electrode material layer (210m) is patterned, a lower conductive film (211, see FIG. 7) may be formed. Thus, a pixel electrode (210) including a lower conductive film (211), a reflective film (212), and an upper conductive film (213) may be formed.

[0159] FIGS. 12a to 12e are cross-sectional views schematically illustrating the steps of a method for manufacturing a display device according to another embodiment of the present invention. The display device manufactured according to the present method may correspond to the display device of FIG. 8, and since the same reference numerals are assigned to the same components, redundant descriptions will be omitted.

[0160] Referring to FIG. 12a, a pixel circuit (PC) including a thin-film transistor (TFT) and a storage capacitor (Cst) can be formed on a substrate (100). Additionally, a second organic insulating layer (117) covering the pixel circuit (PC) and including at least one contact hole (CH) can be formed. FIG. 12a illustrates the formation of the second organic insulating layer (117) starting from the formation of a buffer layer (111) on the substrate (100), and this may be identical to FIG. 11a.

[0161] Referring to FIG. 12b, a first bridge electrode layer (BE1) can be formed, which is disposed on the second organic insulating layer (117) and electrically connected to a pixel circuit (PC) through a contact hole (CH) of the second organic insulating layer (117). First, a material layer (not shown) of the first bridge electrode layer can be formed through a coating process or a deposition process, and the material layer of the first bridge electrode layer can be patterned through a photolithography process and an etching process to form the first bridge electrode layer (BE1). Additionally, the first bridge electrode layer (BE1) is patterned so as to overlap with the contact hole (CH) of the second organic insulating layer (117), thereby allowing the first bridge electrode layer (BE1) to be connected to the pixel circuit (PC) through the contact hole (CH). In one embodiment, the first bridge electrode layer (BE1) comprises a transparent conductive oxide as described above.

[0162] Referring to FIG. 12c, a pixel electrode (210) can be formed on the first bridge electrode layer (BE1). First, a pixel electrode material layer (not shown) can be formed through a coating process or a deposition process, and the pixel electrode (210) can be formed by patterning the pixel electrode material layer through a photolithography process and an etching process. At this time, the pixel electrode material layer can be patterned so that the pixel electrode (210) does not overlap with the contact hole (CH) of the second organic insulating layer (117) on a flat surface.

[0163] Although FIG. 12c illustrates that the pixel electrode (210) has a single-layer structure, it will be understood that the present method can also be applied when the pixel electrode (210) has a multi-layer structure including a reflective film and a conductive film.

[0164] Referring to FIG. 12d, a second bridge electrode layer (BE2) can be formed by being disposed on a first bridge electrode layer (BE1) such that a pixel electrode (210) is interposed therein. Similar to the formation of the first bridge electrode layer (BE1), a material layer (not shown) of the second bridge electrode layer can be formed first through a coating process or a deposition process, and the second bridge electrode layer (BE2) can be formed by patterning the material layer of the second bridge electrode layer through a photolithography process and an etching process. The second bridge electrode layer (BE2) can be patterned so that at least a portion of it is in direct contact with the first bridge electrode layer (BE1). As described above, in one embodiment, the second bridge electrode layer (BE2) comprises a transparent conductive oxide.

[0165] Referring to FIG. 12e, a pixel defining film (120) can be formed that is disposed on the pixel electrode (210) and defines an opening (120OP) that overlaps with a part of the pixel electrode (210). The opening (120OP) of the pixel defining film (120) may overlap not only with the pixel electrode (210) but also with the first and second bridge electrode layers (BE1, BE2) disposed below and above the pixel electrode (210), respectively.

[0166] Subsequently, an intermediate layer (220) on the pixel electrode (210) and a counter electrode (230) on the intermediate layer (220) can be formed. A sealing layer (300) including a first inorganic sealing layer (310), an organic sealing layer (320), and a second inorganic sealing layer (330) can be formed on the counter electrode (230), and a black matrix (BM) and a color filter (CF), etc. can be formed on the sealing layer (300). The method of forming the pixel defining film (120), the intermediate layer (220), the counter electrode (230), the sealing layer (300), the black matrix (BM), and the color filter (CF), etc., may be the same as previously described with reference to FIGS. 10f to 10j. Through this, the display device (1) described above with reference to FIG. 8 can be provided.

[0167] Although the method for manufacturing the display device (1) of FIG. 8 has been described so far, it is obvious that other embodiments of the display device can be manufactured through variations of the method. For example, the method for manufacturing the display device described above can be similarly applied to manufacture the display device (1) of FIG. 9.

[0168] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0169] 1: Display device 100: Substrate 117: Second organic insulating layer 120: Pixel definition membrane 120OP: Opening of the pixel definition membrane 200: Light-emitting element 210: Pixel electrode 211: Lower conductive film 212: Semi-dead wall 213: Upper conductive film 220: Middle layer 230: Counter electrode BE: Bridge electrode CH: Contact hole

Claims

Claim 1 A substrate; a pixel circuit disposed on the substrate and comprising a thin-film transistor and a storage capacitor; an insulating layer covering the pixel circuit; a bridge electrode disposed on the insulating layer and electrically connected to the pixel circuit through a contact hole formed in the insulating layer; a pixel electrode disposed on the insulating layer and electrically connected to the bridge electrode; a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; a counter electrode on the pixel electrode; and a light-emitting layer between the pixel electrode and the counter electrode; wherein the pixel electrode does not overlap with the contact hole of the insulating layer on a planar surface, at least a part of the bridge electrode contacts the upper surface of the pixel electrode, and the bridge electrode comprises a first bridge electrode layer interposed between the insulating layer and the pixel electrode; A display device comprising: a first bridge electrode layer and a second bridge electrode layer disposed on the first bridge electrode layer; wherein the pixel electrode is interposed between the first bridge electrode layer and the second bridge electrode layer of the bridge electrode. Claim 2 A display device according to claim 1, wherein at least a portion of the bridge electrode overlaps with the opening of the pixel defining film on a plane. Claim 3 A display device according to claim 1, wherein the bridge electrode comprises a transparent conductive oxide. Claim 4 A display device according to claim 1, wherein the area of ​​the bridge electrode on a plane is larger than the area of ​​the pixel electrode. Claim 5 delete Claim 6 A display device according to claim 1, wherein the pixel electrode comprises: a conductive film comprising a transparent conductive oxide; and a reflective film comprising a metal disposed on the conductive film; and wherein at least a portion of the bridge electrode contacts the upper surface of the reflective film of the pixel electrode. Claim 7 A display device according to claim 1, wherein the pixel electrode comprises: a lower conductive film comprising a transparent conductive oxide; a reflective film comprising a metal disposed on the lower conductive film; and an upper conductive film comprising a transparent conductive oxide disposed on the reflective film, wherein at least a portion of the bridge electrode contacts the upper surface of the upper conductive film of the pixel electrode. Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 A display device according to claim 1, wherein the pixel electrode comprises a reflective film containing metal, and the first bridge electrode layer contacts the lower surface of the reflective film of the pixel electrode. Claim 13 A display device according to claim 12, wherein the pixel electrode further comprises a conductive film located on the reflective film and including a transparent conductive oxide, and the second bridge electrode layer contacts the upper surface of the conductive film of the pixel electrode. Claim 14 A display device according to claim 1, wherein the pixel defining film comprises a light-blocking material. Claim 15 delete Claim 16 delete Claim 17 delete Claim 18 delete Claim 19 delete Claim 20 delete Claim 21 delete Claim 22 A method for manufacturing a display device comprising: forming a pixel circuit including a thin-film transistor and a storage capacitor on a substrate; forming an insulating layer covering the pixel circuit and including at least one contact hole; forming a first bridge electrode layer disposed on the insulating layer and electrically connected to the pixel circuit through the contact hole of the insulating layer; forming a pixel electrode disposed on the first bridge electrode layer; forming a second bridge electrode layer disposed on the first bridge electrode layer such that the pixel electrode is interposed therein; forming a pixel defining film disposed on the pixel electrode and defining an opening that overlaps with a part of the pixel electrode; forming a light-emitting layer on the pixel electrode; and forming a counter electrode on the light-emitting layer; wherein the step of forming the pixel electrode comprises: forming a pixel electrode material layer; and patterning the pixel electrode material layer such that the pixel electrode does not overlap with the contact hole of the insulating layer on a plane. Claim 23 A method for manufacturing a display device according to claim 22, wherein the pixel electrode comprises a reflective film containing metal, and the first bridge electrode layer contacts the lower surface of the reflective film of the pixel electrode. Claim 24 A method for manufacturing a display device according to claim 23, wherein the pixel electrode further comprises a conductive film located on the reflective film and including a transparent conductive oxide, and the second bridge electrode layer contacts the upper surface of the conductive film of the pixel electrode.

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