Method and apparatus for surface activation of getter materials using high-frequency based plasma, and method for generating high-vacuum condition using the same
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- POSTECH ACADEMY INDUSTRY FOUNDATION
- Filing Date
- 2025-05-08
- Publication Date
- 2026-08-03
Smart Images
Figure 112025051177417-PAT00003_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a method and apparatus for surface activation of a getter material using high-frequency-based plasma, and a method for forming a high vacuum using the same. More specifically, the present invention relates to a method and apparatus for surface activation of a getter material using high-frequency-based low-energy high-density plasma, and a method for forming a high vacuum inside a chamber using the same. Background Technology
[0003] The content described in this section merely provides background information regarding the present embodiment and does not constitute prior art.
[0004] In technological fields requiring high vacuum conditions, such as semiconductor process equipment, particle accelerators, and space environment simulation systems, maintaining high vacuum or ultra-high vacuum is a critical factor. This is an essential requirement for ensuring the precision of processes or experiments, minimizing contamination by external particles or gases, and guaranteeing the stability of equipment lifespan.
[0005] For example, etching or deposition equipment used in semiconductor processes requires precise process alignment on a scale of several nanometers; therefore, reaction contamination caused by residual molecules within the chamber must be thoroughly eliminated. To this end, the interior of the chamber is typically Below Torr, in some processes It requires a vacuum level of Torr. Furthermore, a stable high-vacuum environment is essential for analytical instruments, such as electron microscopes, to prevent electron scattering and maximize resolution.
[0006] Furthermore, in the field of particle accelerators, maintaining an ultra-high vacuum is required to minimize particle beam losses and ensure trajectory stability. Since gas molecules within the accelerator chamber cause scattering or loss when colliding with the particle beam, the pressure inside the chamber must be maintained as low as possible. In particular, for long-distance beam lines spanning several kilometers, the uniformity and consistency of the vacuum determine the overall system performance.
[0007] Furthermore, space environment simulation chambers must reproduce conditions where actual external pressure does not exist, which requires maintaining a vacuum for extended periods and very low residual gas levels. Since it is difficult to ensure vacuum stability in such environments using only conventional dry pumps or turbo molecular pumps (TMPs), getter-based pump systems have been widely utilized as an auxiliary high-vacuum means.
[0008] Getters operate by removing gas molecules through adsorption or chemical reaction on their internal surfaces. They offer high space efficiency and stability due to the absence of pumping noise and internal drive components. In particular, non-evaporable getters (NEGs) are utilized in environments requiring high vacuum, and NEG pumps are implemented using various alloy materials such as titanium-zirconium-vanidium alloys, zirconium-aluminum alloys, zirconium-vanidium-iron alloys, and titanium alloys. However, to properly utilize these getter materials, an initial process called surface activation of the getter material must be performed beforehand.
[0009] Conventional getter activation methods rely on high-temperature heating. This is accomplished by heating the getter material at a temperature of around 180°C for more than 24 hours, or by rapidly heating it at a temperature of 450°C or higher for 10 to 45 minutes.
[0010] However, such thermal activation methods are practically difficult to implement in reality due to significant issues in certain fields. For instance, methods requiring prolonged heating have the disadvantage of significantly increasing overall process time in equipment involving repeated gas injection and exhaust, such as semiconductor process equipment or electron microscopes. In particular, this can have a critical impact on productivity when the getter must be reactivated periodically rather than as a one-time installation.
[0011] Furthermore, high-temperature heating methods are often difficult to apply due to the physical limitations of the equipment. For example, copper chambers may experience deformation, microcracks, or structural warping due to thermal expansion if exposed to temperatures exceeding 400°C for extended periods. Additionally, high-temperature heating is impossible by design in systems equipped with various sensors that cannot withstand high-temperature environments (e.g., pressure sensors, electron beam detectors, etc.).
[0012] Furthermore, in the recently burgeoning fields of space environment simulation systems and large particle accelerators, there is an increasing number of attempts to improve vacuum performance by coating the entire or partial inner walls of chambers with getter materials. However, since these devices often have structural dimensions exceeding several meters, heating the entire chamber with heaters is physically impossible or uneconomical. In fact, most space environment chambers are large structures exceeding 1 meter, and technical means to locally heat the getter-coated areas within the chamber are limited. Particle accelerators also require extreme suppression of temperature fluctuations to maintain the structural stability of the chamber, and because they contain numerous diagnostic devices that could become inoperable if exposed to high temperatures, conventional thermal activation methods are often practically unusable.
[0013] As such, existing getter activation technologies face significant limitations in practical application due to the structural and thermal constraints of advanced equipment that requires high vacuum. Consequently, there is an urgent need for new technologies capable of efficiently activating getter materials at low temperatures or without heating. The problem to be solved
[0015] The problem that the present invention aims to solve is to provide a method and apparatus for surface activation of a getter material using a high-frequency-based plasma with a wide usable pressure range and high practicality, and a method for forming a high vacuum using the same.
[0016] The problem that the present invention aims to solve is to provide a method and apparatus for surface activation of a getter material using high-frequency-based plasma that minimizes contamination inside the chamber due to low energy, and a method for forming a high vacuum using the same.
[0017] The problem that the present invention aims to solve is to provide a method and apparatus for surface activation of a getter material using a high-frequency-based plasma that is stable and highly efficient through high and uniform ion density, and a method for forming a high vacuum using the same.
[0018] The objects of the present invention are not limited to those mentioned above, and other unmentioned objects and advantages of the present invention may be understood from the following description and will be more clearly understood by the embodiments of the present invention. Furthermore, it will be readily apparent that the objects and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims. means of solving the problem
[0020] A method for surface activation of a getter material using a high-frequency-based plasma according to some embodiments of the present invention for solving the above problem may include the steps of: adjusting the pressure inside a chamber containing a getter material to a first reference pressure; supplying a noble gas into the chamber; adjusting the pressure inside the chamber to a second reference pressure; applying a high-frequency power source to form a plasma on the surface of the getter material contained in the chamber; and activating the surface of the getter material using the formed plasma.
[0021] In some embodiments, the step of forming plasma on the surface of the getter material contained in the chamber by applying the high-frequency power includes the step of providing radio frequency power to the electrodes using a radio frequency (RF) power source, the step of forming an electric field between the electrodes, and the step of ionizing the noble gas using electrons accelerated by the electric field to form the plasma, and the electrodes may include the getter material.
[0022] In some embodiments, the electrode may include a metal plate coated with the getter material.
[0023] In some embodiments, the electrode may include a metal plate and the getter material located on the metal plate.
[0024] In some embodiments, the step of forming plasma on the surface of the getter material contained in the chamber by applying the high-frequency power may include the step of providing radio frequency power to a coil using a radio frequency power source, the step of forming an alternating magnetic field and an induced electric field inside the chamber using the coil, and the step of ionizing the noble gas to form the plasma using electrons accelerated by the induced electric field.
[0025] In some embodiments, the getter material may be located on at least a portion of the inner wall of the chamber.
[0026] In some embodiments, the coil may be placed outside the chamber.
[0027] In some embodiments, the step of forming plasma on the surface of the getter material contained in the chamber by applying the high-frequency power may include the step of providing microwave power to a coaxial transmission line resonator (CTLR) using a microwave (MW) power source, the step of forming an electric field using the coaxial transmission line resonator, the step of diffusing the electric field using an antenna, and the step of ionizing the noble gas to form the plasma using electrons accelerated by the electric field.
[0028] A surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention for solving the above problem comprises a high-frequency-based plasma generator that generates plasma using a high-frequency power source, a vacuum chamber in which the plasma is formed, a getter structure disposed within the vacuum chamber, a noble gas supply unit that supplies noble gas within the chamber, and a vacuum pump for forming vacuum conditions within the chamber, wherein the surface of the getter structure can be activated by the plasma generated by the high-frequency-based plasma generator.
[0029] In some embodiments, the high-frequency based plasma generator may include a radio frequency power source that generates radio frequency power, a first electrode connected to the radio frequency power source, a second electrode connected to ground, and a matcher for matching the impedance between the radio frequency power source and the first electrode.
[0030] In some embodiments, at least one of the first electrode and the second electrode may include the getter structure.
[0031] In some embodiments, the high-frequency based plasma generator may include a radio frequency power source that generates radio frequency power, a coil connected to the radio frequency power source and disposed outside the vacuum chamber, and a matcher for matching the impedance between the radio frequency power source and the coil.
[0032] In some embodiments, the getter structure may be disposed on at least a portion of the inner wall of the vacuum chamber.
[0033] In some embodiments, the high-frequency-based plasma generator may include first and second microwave power sources that generate microwave power, a resonator connected to the first microwave power source and forming an electric field inside the vacuum chamber, an antenna connected to the second microwave power source and diffusing the electric field formed in the resonator, and a matcher for matching the impedance between the first microwave power source and the resonator.
[0034] In some embodiments, the resonator may include a coaxial transmission line resonator.
[0035] In some embodiments, the apparatus further includes a first actuator connected to the resonator and a second actuator connected to the antenna, and to form the plasma, the first and second actuators can each move the resonator and the antenna to a first position facing each other.
[0036] In some embodiments, when the surface of the getter structure is activated, the first and second actuators can each move the resonator and the antenna to a second position different from the first position.
[0037] In some embodiments, a pressure gauge for measuring the pressure in the vacuum chamber and a control valve for controlling the pressure in the vacuum chamber may be further included.
[0038] In some embodiments, the vacuum pump may include a turbo molecular pump and a dry pump.
[0039] A method for forming a high vacuum according to some embodiments of the present invention for solving the above problem may include the steps of: adjusting the pressure inside a chamber containing a getter material to a first reference pressure; supplying a noble gas into the chamber; adjusting the pressure inside the chamber to a second reference pressure; applying a high-frequency power source to form a plasma on the surface of the getter material contained in the chamber; activating the surface of the getter material using the formed plasma; and adjusting the pressure inside the chamber to a third reference pressure or lower. Effects of the invention
[0041] The surface activation method and apparatus of a getter material using high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of being applicable to vacuum equipment containing heat-sensitive components and enabling getter activation without the risk of equipment damage, as they can induce the removal of oxide films on the getter surface and the enhancement of reactivity without a high-temperature environment, compared to conventional getter activation technology that relies on high-temperature heating methods.
[0042] In addition, the method and apparatus for surface activation of a getter material using high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of significantly reducing the operating time and energy consumption of the entire vacuum system because, unlike conventional thermal activation methods which require heating for several hours at 180°C or for tens of minutes at 450°C or higher, the method of the present invention can locally transfer energy to the getter surface in a short time using plasma.
[0043] In addition, the method and apparatus for surface activation of a getter material using a high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of being practically applicable to various vacuum systems as plasma can be formed even over a wide available pressure range, and can effectively suppress unnecessary damage to the getter material or contamination caused by sputtering because getter activation can be induced in a relatively low ion energy region (several eV).
[0044] In addition, the method and apparatus for surface activation of a getter material using a high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, can stably form a plasma having high and uniform electron density and ion density, so the getter activation efficiency relative to input power is excellent, and there is an advantage of being stably applicable even in vacuum equipment design and experimental environments requiring precision.
[0045] In addition to the above, the specific effects of the present invention are described together with the specific details for implementing the invention below. Brief explanation of the drawing
[0047] FIG. 1 is a diagram illustrating a surface activation apparatus for a getter material using high-frequency-based plasma according to some embodiments of the present invention. FIG. 2 is a diagram illustrating the schematic flow of a method for surface activation of a getter material using high-frequency-based plasma according to some embodiments of the present invention. FIG. 3 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is a capacitively coupled plasma type. Figure 4 is a diagram illustrating a method for surface activation of a getter material using a surface activation device for a getter material according to Figure 3. FIG. 5 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is an inductively coupled plasma type. FIG. 6 is a diagram illustrating a method for surface activation of a getter material using a surface activation device for a getter material according to FIG. 5. FIG. 7 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is a coaxial transmission line resonator type. FIG. 8 is a diagram illustrating a method for surface activation of a getter material using a surface activation device for a getter material according to FIG. 7. FIG. 9 is a drawing illustrating another embodiment of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention. FIG. 10 is a diagram illustrating a method for forming a high vacuum using a surface activation method of a getter material using a high-frequency-based plasma according to some embodiments of the present invention. Specific details for implementing the invention
[0048] Terms and words used in this specification and claims shall not be interpreted as being limited to their general or dictionary meanings. In accordance with the principle that an inventor may define the concept of a term or word to best describe their invention, they shall be interpreted in a meaning and concept consistent with the technical spirit of the invention. Furthermore, since the embodiments described in this specification and the configurations illustrated in the drawings are merely one embodiment of the invention and do not represent the entire technical spirit of the invention, it should be understood that various equivalents, modifications, and applicable examples capable of replacing them may exist at the time of filing this application.
[0049] The terms first, second, A, B, etc., as used in this specification and claims may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.
[0050] The terms used in this specification and claims are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" should be understood as not precluding the existence or addition of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification.
[0051] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this invention pertains.
[0052] Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.
[0053] In addition, each component, process, procedure, or method included in each embodiment of the present invention may be shared within a scope that is not technically contradictory to one another.
[0055] FIG. 1 is a diagram illustrating a surface activation apparatus for a getter material using high-frequency-based plasma according to some embodiments of the present invention.
[0056] As used herein, the term "high-frequency" is used as a concept encompassing radio frequency (RF) and microwave (MW) bands. Radio frequency generally refers to a frequency band from several kHz to several hundred MHz, while microwave includes a band from several hundred MHz to several tens of GHz. For example, in some embodiments of the present invention, the high-frequency power source may include a radio frequency power source in the 13.56 MHz band or a microwave power source in the 2.45 GHz band, but the embodiments are not limited thereto. As described below, high-frequency power may be applied within a vacuum chamber containing a getter material to induce the generation of high-frequency plasma, thereby being used to physically / chemically activate the surface of the getter material. Accordingly, in this specification, high-frequency-based plasma or high-frequency plasma should be understood as a concept encompassing plasma generated using radio frequency or microwave-based power.
[0057] A surface activation device (1) for a getter material using a high-frequency-based plasma according to some embodiments of the present invention may include a high-frequency-based plasma generator (10), a vacuum chamber (20), a getter structure (30), a pressure gauge (40), a control valve (50), a Noble gas supply (60), and a vacuum pump (70).
[0058] A high-frequency-based plasma generator (10) can be operated based on a high-frequency power source. The high-frequency-based plasma generator (10) can form plasma by ionizing the noble gas injected into the vacuum chamber. The high-frequency-based plasma generator (10) can generate plasma using, for example, a radio frequency power source or a microwave power source. For example, when using a radio frequency power source, the high-frequency-based plasma generator (10) can generate plasma using a capacitively coupled plasma (CCP) method or an inductively coupled plasma (ICP) method. As another example, when using a microwave power source, the high-frequency-based plasma generator (10) can generate plasma using a coaxial transmission line resonator (CTLR) method.
[0059] The high-frequency based plasma generated in the high-frequency based plasma generator (10) can supply direct and uniform energy to the surface of the getter material contained in the getter structure (30).
[0060] High-frequency plasma can have a relatively wider usable pressure range compared to DC-based plasma. Generally, DC-based plasma can only be maintained stably under low pressure conditions of a few mTorr or less, whereas high-frequency plasma can generate stable plasma even at tens of mTorr or higher. Since this allows for flexible application in various vacuum environments, it offers very high practicality.
[0061] In addition, compared to DC-based plasmas with ion energies of several hundred eV, high-frequency-based plasmas have relatively lower ion energies, which can prevent excessive sputtering on the surface of the getter material. Due to this characteristic, the possibility of redeposition of the getter material or particle contamination caused by sputtering can be significantly reduced during the process of activating the surface of the getter material.
[0062] Furthermore, high-frequency-based plasma can be controlled to have relatively high and uniformly distributed electron and ion densities. Therefore, high-frequency-based plasma enables more precise and stable plasma density control, resulting in excellent surface activation efficiency of getter materials relative to input power and offering the advantage of high-precision environmental control during experiments or equipment structural design.
[0063] In particular, radio frequency-based capacitive coupled plasma has the structural advantage of being able to uniformly form a large-area plasma, making it effective for use in facilities with large volumes or extensively applied getter materials. For example, in environments where large vacuum chambers or surfaces of getter materials dispersed at multiple locations must be activated simultaneously, a wide plasma range can be covered with only an electrode to which a single radio frequency power source is applied, which can be very advantageous in terms of process efficiency and design simplification.
[0064] Furthermore, radio frequency-based inductively coupled plasma has the advantage of being able to form plasma using only an external induction coil without the insertion of electrodes, thereby effectively activating the surface of getter materials without modifying the design of the existing vacuum chamber structure. Additionally, due to the characteristic of plasma ions moving toward the ground electrode, the inductively coupled plasma can directly transfer energy to the getter material formed on at least a portion of the chamber inner wall, offering the advantage of activating the surface of the getter material without damaging the structure.
[0065] In addition, the plasma based on the coaxial transmission line resonator has the advantage that plasma generation can be achieved using only a small structure in which the coaxial transmission line resonator has a diameter of about 1 cm and a length of about 3 cm, so it can be effectively installed and operated without interference even in facilities such as accelerators with narrow chamber internal spaces or complex structures. Such a miniaturized structure has the advantage of effectively activating the surface of locally placed getter materials. The specific structure of the high-frequency-based plasma generator (10) will be described later.
[0066] The vacuum chamber (20) may provide a space in which a getter structure (30) is disposed inside and a high-frequency based plasma is formed. The vacuum chamber (20) may be constructed of a metal or ceramic material to maintain a high vacuum environment, but the embodiments are not limited thereto. For example, the vacuum chamber (20) may adopt a structure that includes a viewport made of some quartz as needed, so that high-frequency power generated from a high-frequency source can be supplied into the vacuum chamber (20). The vacuum chamber (20) may maintain a stable vacuum state isolated from the outside when high-frequency based plasma is generated and may include various exhaust ports and power supply ports.
[0067] As described above, the getter structure (30) may be a structure contained within the vacuum chamber (20). The getter structure (30) may include a non-evaporative getter material and may include an alloy material such as titanium-zirconium-vanidium or zirconium-aluminum, but the embodiments are not limited thereto. The surface of the getter structure (30) may be activated by a high-frequency-based plasma generated in a high-frequency-based plasma generator (10).
[0068] According to some embodiments, the getter structure (30) may be coated on an electrode, used directly as an electrode, or attached to the electrode as another structure. In addition, the getter structure (30) may be coated on the inner wall of the vacuum chamber (20), or the inner wall of the vacuum chamber (20) itself may be formed as the getter structure (30). Furthermore, the getter structure (30) may be configured as a separate support inside the vacuum chamber (20). As such, the getter structure (30) may be applied in various forms depending on the usage of the facility and equipment, and the embodiments of the present invention are not to be interpreted as being limited to the form and location of the getter structure (30) used in this specification.
[0069] The pressure gauge (40) can detect the absolute pressure state inside the vacuum chamber (20) in real time and can be used to accurately control the timing of noble gas injection, pumping stabilization, and high-frequency-based plasma ignition. For example, the pressure gauge (40) may use sensors such as a capacitive gauge, a convection gauge, a Pirani gauge, or an ion gauge, but the embodiments are not limited thereto. In particular, the pressure gauge (40) may have specifications that prevent damage from the plasma when the high-frequency-based plasma is generated.
[0070] The control valve (50) can be used to control the flow rate of noble gas flowing in from the noble gas supply unit (60) and to maintain stable pressure within the chamber. The control valve (50) may be used to include both a supply control valve connected to the noble gas supply unit (60) and a discharge control valve connected to the vacuum pump (70). The control valve (50) may include a mass flow controller (MFC), an angle valve, a variable leak valve, a flow regulator valve, etc., but the embodiments are not limited thereto. A person skilled in the art of the present invention may design a device or facility by applying an appropriate control valve (50) as needed.
[0071] The noble gas supply unit (60) may be a device for supplying noble gases used for plasma generation, such as argon (Ar) or krypton (Kr), into the vacuum chamber (20). The noble gas may be selected as a gas with high ionization efficiency that does not react with surface-activated getter material.
[0072] The vacuum pump (70) may be a device that performs initial depressurization by removing air inside the vacuum chamber (20) and maintains a high vacuum state during subsequent processes. The vacuum pump (70) may include at least one of a dry pump, a turbo molecular pump, and a cryo pump, but the embodiments are not limited to the type of pump.
[0074] FIG. 2 is a diagram illustrating the schematic flow of a method for surface activation of a getter material using high-frequency-based plasma according to some embodiments of the present invention.
[0075] Referring to FIGS. 1 and 2, a surface activation device (1) for a getter material using a high-frequency-based plasma can control the pressure inside a vacuum chamber (20) to a first reference pressure (S100) using a pressure gauge (40), a control valve (50), and a vacuum pump (70). For example, the first reference pressure may be, for example, about 1 mTorr, but the embodiments are not limited thereto. According to some embodiments, step S100 may mean a preconditioning step to stabilize the pressure state inside the vacuum chamber (20) prior to forming the high-frequency-based plasma and to ensure the reaction purity of the noble gas to be injected.
[0076] Next, a noble gas can be supplied into the vacuum chamber (20) using a noble gas supply unit (60) and a control valve (50) (S200). The noble gas may be an inert gas such as, for example, argon (Ar), helium (He), krypton (Kr), or xenon (Xe). The noble gas is electrically neutral and provides a high ionization rate and stability when forming a high-frequency-based plasma, thereby limiting unnecessary reactions with the surface of the getter material contained in the getter structure (30).
[0077] Next, the pressure inside the vacuum chamber (20) can be adjusted to a second reference pressure using a noble gas supply unit (60), a vacuum pump (70), and a control valve (50) (S300). The second reference pressure may be, for example, at a level of about 10 to 100 mTorr, but the embodiments are not limited thereto. The second reference pressure may correspond to a condition in which high-frequency power efficiently ionizes the noble gas and stably maintains a high-frequency-based plasma, and a person skilled in the art of the present invention may appropriately adjust the second reference pressure as needed.
[0078] Next, a high-frequency power source is applied using a high-frequency-based plasma generator (10), thereby forming a high-frequency-based plasma inside a vacuum chamber (20) (S400). For example, the high-frequency-based plasma generator (10) can form a high-frequency-based plasma inside a vacuum chamber (20) by applying radio frequency power or microwave power. According to some embodiments, the high-frequency-based plasma generator (10) can generate a high-frequency-based plasma using at least one of a capacitively coupled plasma generation method, an inductively coupled plasma generation method, and a coaxial transmission line resonator-based plasma generation method. The high-frequency plasma generated by the high-frequency-based plasma generator (10) can be evenly distributed in a plasma region (PLR) inside a vacuum chamber (20) and can maintain an energy density suitable for contacting the surface of a getter material included in a getter structure (30).
[0079] The high-frequency plasma generated from the high-frequency plasma generator (10) can activate the surface of a getter material of a getter structure (30) placed inside a vacuum chamber (20) (S500). Ions, electrons, radicals, etc. generated from the high-frequency plasma collide with the surface of the getter material, thereby removing oxide films or surface impurities and improving the surface reactivity of the getter material to restore or strengthen its gas adsorption capacity. Through this process, surface activation of the getter material can be achieved under low-temperature or non-heating conditions without the conventional high-temperature heating method, and it can be applied to equipment or materials sensitive to high temperatures. Hereinafter, with reference to FIGS. 3 to 9, a method and apparatus for surface activation of a getter material using a high-frequency plasma according to some embodiments of the present invention will be described in more detail.
[0081] FIG. 3 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is a capacitively coupled plasma type. FIG. 4 is a diagram illustrating a method for surface activation of a getter material using the surface activation device for a getter material according to FIG. 3. For convenience of explanation, details identical or similar to those described above are omitted or briefly explained.
[0082] Referring to FIG. 3, a surface activation device for a capacitively coupled plasma type getter material may include a radio frequency power source (11), a matcher (12), a vacuum chamber (20), a first electrode (31), a second electrode (32), a pressure gauge (40), a first control valve (51), a second control valve (52), a third control valve (53), a fourth control valve (54), a noble gas supply (60), a turbo molecular pump (71), and a dry pump (72).
[0083] The radio frequency power source (11) is a power source that supplies radio frequency power, and may be, for example, a power source having a frequency of 13.56 MHz. The radio frequency power source (11) may be an energy source that applies high-frequency power to the first electrode (31) in the vacuum chamber (20) to form a capacitively coupled plasma. According to some embodiments, the radio frequency power source (11) may include output power and frequency control functions to stably generate ions of the required energy level.
[0084] The matcher (12) may be a device that performs impedance matching by being connected between the radio frequency power source (11) and the first electrode (31). The matcher (12) can stably deliver power to the high-frequency based plasma without power reflection by adjusting the dynamic load change resulting from the generation of high-frequency based plasma in real time.
[0085] The vacuum chamber (20) is a space in which a first electrode (31) and a second electrode (32) are installed and a high-frequency based plasma is formed, and can be sealed with a high-vacuum material (e.g., stainless steel, aluminum, copper, etc.). Additionally, the vacuum chamber (20) can be designed so that structural deformation or particle emission does not occur even if a high-frequency based plasma discharge occurs.
[0086] The first electrode (31) may be connected to a radio frequency power source (11) through a matcher (12), and the second electrode (32) may be connected to ground. At least one of the first electrode (31) and the second electrode (32) may include a getter material. That is, at least one of the first electrode (31) and the second electrode (32) may function as a getter structure (30). For example, at least one of the first electrode (31) and the second electrode (32) may be composed of a metal plate coated with a getter material. As another example, at least one of the first electrode (31) and the second electrode (32) may be designed in a configuration including a metal plate and a structure including a separate getter material located on the metal plate.
[0087] The first control valve (51) and the second control valve (52) may be valves for controlling the flow rate between the vacuum chamber (20) and the noble gas supply unit (60). More specifically, the first control valve (51) may be positioned between the vacuum chamber (20) and the noble gas supply unit (60), and the second control valve (52) may be positioned between the first control valve (51) and the noble gas supply unit (60). Additionally, the third control valve (53) may be positioned between the first control valve (51) and the second control valve (52) and may be connected to a dry pump (72). According to some embodiments, the surface activation device of the getter material may control the first control valve (51) to the third control valve (53) to supply or stop the noble gas from the noble gas supply unit (60) into the vacuum chamber (20), and may also effectively remove (pump) impurity gases present in the line through which the noble gas is supplied. The fourth control valve (54) may be positioned between the turbo molecular pump (71) and the vacuum chamber (20) and may be used to effectively control the pressure inside the vacuum chamber (20). According to some embodiments, the fourth control valve (54) may also act as an angle valve to prevent the noble gas inside the vacuum chamber (20) from overflowing into the turbo molecular pump (71) when a high-frequency based plasma is generated.
[0088] The plasma region (PLR) is a region formed between the first electrode (31) and the second electrode (32) inside the vacuum chamber (20), which means a region where actual high-frequency based plasma is generated, and can be designed to make uniform contact with the surface of a getter material included in at least one of the first electrode (31) and the second electrode (32).
[0089] Referring to FIG. 4, the radio frequency power source (11) can provide radio frequency power to the first electrode (31) (S401). Radio frequency power is supplied to the first electrode (31), and the second electrode (32) opposite it can be grounded. At this time, the radio frequency power of the radio frequency power source (11) can be provided to the first electrode (31) after being matched at the matcher (12).
[0090] Through this process, potential oscillations are induced on the surface of the first electrode (31) due to the reciprocating change of the high-frequency current, thereby inducing the formation of an electric field between the first electrode (31) and the second electrode (32) (S402). This electric field oscillates at a constant frequency and acts on electrons and ions inside the vacuum chamber (20), thereby inducing electron acceleration and collisions with gas molecules. The distribution of the electric field generated between the first electrode (31) and the second electrode (32) may vary depending on the distance between the first electrode (31) and the second electrode (32), the output of the radio frequency, the pressure conditions of the vacuum chamber (20), etc.
[0091] By the formed electric field, the noble gas can be ionized to form a plasma (S403). According to some embodiments, the electric field formed in step S402 acts on the noble gas molecules injected into the vacuum chamber (20) to accelerate electrons, and these electrons collide with the gas molecules to induce ionization, and as a result, the free electrons and positive ions generated continue to collide further by the electric field, thereby causing a high-frequency-based plasma discharge in the plasma region (PLR) inside the vacuum chamber (20).
[0092] The generated high-frequency-based plasma can activate the surface of a getter material included in at least one of the first electrode (31) and the second electrode (32) (S404). The getter material may be included in at least one of the first electrode (31) and the second electrode (32), and depending on its location, the energy density and ion collision directionality received from the high-frequency plasma may vary. The high-frequency-based plasma can collide with the surface of the getter material to remove oxide films or adsorbed impurities and expose the natural gas adsorption active sites of the getter material.
[0093] According to some embodiments, radio frequency-based capacitive coupled plasma has the structural advantage of being able to uniformly form a large-area plasma, so it can be effectively utilized in facilities that are large in volume or where getter materials are widely applied. For example, in environments where large vacuum chambers or surfaces of getter materials dispersed at multiple locations must be activated simultaneously, a wide plasma range can be covered with only an electrode to which a single radio frequency power source is applied, which can be very advantageous in terms of process efficiency and design simplification.
[0095] FIG. 5 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is an inductively coupled plasma type. FIG. 6 is a diagram illustrating a method for surface activation of a getter material using the surface activation device for a getter material according to FIG. 5. For convenience of explanation, details identical or similar to those described above are omitted or briefly explained.
[0096] Referring to FIG. 5, a surface activation device for an inductively coupled plasma type getter material may include a radio frequency power source (11), a matcher (12), a vacuum chamber (20), a getter structure (30), an induction coil (13), a pressure gauge (40), a first control valve (51), a second control valve (52), a third control valve (53), a fourth control valve (54), a noble gas supply (60), a turbo molecular pump (71), and a dry pump (72).
[0097] The radio frequency power source (11) may be a power source that supplies radio frequency power. The radio frequency power source (11) may be an energy source that forms an inductively coupled plasma by applying high-frequency power to an induction coil (13) placed outside the vacuum chamber (20).
[0098] The matcher (12) may be a device that performs impedance matching by being connected between a radio frequency power source (11) and an induction coil (13). The matcher (12) can stably deliver power to the high-frequency based plasma without power reflection by adjusting dynamic load changes in real time due to high-frequency based plasma generation.
[0099] An induction coil (13) is installed outside the vacuum chamber (20) and can generate a time-varying magnetic field that changes over time by receiving radio frequency power. Due to the time-varying magnetic field, an induced electric field is generated inside the vacuum chamber (20), and a high-frequency based plasma can be generated in the plasma region (PLR) inside the vacuum chamber (20) by this induced electric field.
[0100] The getter structure (30) may be placed on at least a portion of the inner wall of the vacuum chamber (20). The getter structure (30) may be a structure in which at least a portion of the inner wall of the vacuum chamber (20) is coated with a getter material, or it may be a structure comprising a separate getter material.
[0101] The plasma region (PLR) refers to an area where actual high-frequency based plasma is generated inside the vacuum chamber (20) by the induction coil (13), and can be designed so that the high-frequency based plasma can uniformly contact the surface of the getter structure (30).
[0102] Referring to FIG. 6, the radio frequency power supply (11) can apply radio frequency power to an induction coil (13) placed outside the vacuum chamber (20) (S411).
[0103] The high-frequency current flowing through the induction coil (13) can generate an alternating magnetic field, and the alternating magnetic field can form an induced electric field in the space inside the vacuum chamber (20) according to Faraday's principle of electromagnetic induction (S412). This induced electric field can accelerate free electrons in the space inside the vacuum chamber (20). The electrons accelerated by the induced electric field can collide with noble gas atoms injected into the vacuum chamber (20) to induce ionization. The ions and free electrons generated through this process can form a high-frequency-based plasma by repeating continuous collisions and energy transfer (S413).
[0104] The generated high-frequency-based plasma can activate the surface of the getter material by removing oxide films and adsorbed impurities present on the surface of the getter material contained in the getter structure (30) (S414).
[0105] According to some embodiments, radio frequency-based inductively coupled plasma has the advantage of being able to form plasma using only an external induction coil without electrode insertion, thereby effectively activating the surface of a getter material without modifying the design of the existing vacuum chamber structure. Additionally, due to the characteristic of plasma ions moving toward the ground electrode, the inductively coupled plasma can directly transfer energy to the getter material formed on at least a portion of the chamber inner wall, thereby having the advantage of activating the surface of the getter material without damaging the structure.
[0107] FIG. 7 is a diagram illustrating the schematic configuration of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention when the device is a coaxial transmission line resonator type. FIG. 8 is a diagram illustrating a method for surface activation of a getter material using the surface activation device for a getter material according to FIG. 7. For convenience of explanation, details identical or similar to those described above are omitted or briefly explained.
[0108] Referring to FIG. 7, a surface activation device for a getter material of the coaxial transmission line resonator type may include a first microwave power supply (14), a matcher (12), a second microwave power supply (17), a vacuum chamber (20), a resonator (15), an antenna (16), a pressure gauge (40), a first control valve (51), a second control valve (52), a third control valve (53), a fourth control valve (54), a noble gas supply (60), a turbo molecular pump (71), and a dry pump (72).
[0109] The first microwave power source (14) can generate microwave power. For example, the first microwave power source (14) can generate a microwave signal in the 2.45 GHz band. The first microwave power source (14) is connected to a resonator (15) and can supply microwave power to the resonator (15). The first microwave power source (14) may be an input energy source for forming a strong standing wave inside the resonator (15).
[0110] A matcher (12) can be connected between a first microwave power source (14) and a resonator (15). The matcher (12) can match the impedance between the first microwave power source (14) and the resonator (15) to minimize power reflection.
[0111] The resonator (15) is connected to the first microwave power source (14) through the matcher (12) and can receive microwave power from the first microwave power source (14). The resonator (15) is formed as a coaxial structure having a central inner conductor and an outer shield, and receives microwave power from the first microwave power source (14) to generate a locally strong electric field in a resonant state. This electric field can be maximum at a specific location of the resonator (15) (e.g., a λ / 4 or λ / 2 resonance point). The resonator (15) may be, for example, a coaxial transmission line resonator.
[0112] The second microwave power source (17) can generate microwave power. The second microwave power source (17) is connected to the antenna (16) and can diffuse or radiate the strong electric field generated inside the resonator (15) into the vacuum chamber (20). Since the plasma may be locally concentrated at a specific point due to the structure of the resonator (15), the antenna (16) can use the microwave power provided by the second microwave power source (17) to overcome this problem and induce the plasma generated in the resonator (15) to diffuse uniformly throughout the vacuum chamber (20). The antenna (16) can be designed to be installed directly inside the vacuum chamber (20) or attached to the outside of the chamber, and a person with ordinary knowledge in the art of the present invention can design the location and installation method of the antenna as needed. The antenna (16) can adopt various shapes as needed, such as a single pole shape, a slot shape, a probe shape, or a radial shape.
[0113] The getter structure (30) may be placed on at least a portion of the inner wall of the vacuum chamber (20). The getter structure (30) may be a structure in which at least a portion of the inner wall of the vacuum chamber (20) is coated with a getter material, or it may be a structure comprising a separate getter material.
[0114] The plasma region (PLR) refers to an area within the vacuum chamber (20) where actual high-frequency based plasma is generated by the resonator (15) and antenna (16), and can be designed so that the high-frequency based plasma can uniformly contact the surface of the getter structure (30).
[0115] Referring to FIG. 8, the first microwave power source (14) can supply microwave power to the resonator (15), and the second microwave power source (17) can supply microwave power to the antenna (16) (S421). The power supplied by the first microwave power source (14) and the power supplied by the second microwave power source (17) may be different from each other or may be the same from each other.
[0116] The electric field formed inside the resonator (15) can be diffused into the vacuum chamber (20) through an antenna (16) connected to a second microwave power source (17) (S422). At this time, the antenna (16) can be installed inside or outside the vacuum chamber (20), and the diffused electric field can be designed to widely diffuse the high-frequency based plasma to the area where the getter structure (30) is located.
[0117] The electric field diffused into the vacuum chamber (20) acts on the atoms or molecules of the noble gas injected into the vacuum chamber (20) to accelerate free electrons, and as a result, ionization collisions occur and a high-frequency based plasma can be formed (S423).
[0118] The generated high-frequency-based plasma can activate the surface of the getter material by removing oxide films and adsorbed impurities present on the surface of the getter material contained in the getter structure (30) (S424).
[0119] According to some embodiments, the plasma based on a coaxial transmission line resonator has the advantage that plasma generation can be achieved using only a small structure in which the coaxial transmission line resonator has a diameter of about 1 cm and a length of about 3 cm, so it can be effectively installed and operated without interference even in facilities such as accelerators with narrow chamber internal spaces or complex structures. This miniaturized structure has the advantage of being able to effectively activate the surface of locally placed getter materials.
[0121] FIG. 9 is a diagram illustrating another embodiment of a surface activation device for a getter material using a high-frequency-based plasma according to some embodiments of the present invention. FIG. 9 illustrates another example of a surface activation device for a getter material using a high-frequency-based plasma of a coaxial transmission line resonator type; however, the embodiments are not limited thereto, and other types of activation devices can also be designed with the configuration according to FIG. 9. For convenience of explanation, details identical or similar to those described above are omitted or briefly explained.
[0122] Referring to FIG. 9 (a) and FIG. 9 (b), the high-frequency based plasma generator (10) does not always have to be fixed in the same position. For example, the resonator (15) can be connected to the first actuator (19_1) and the antenna (16) can be connected to the second actuator (19_2).
[0123] Referring to FIG. 9 (a), in order to activate the surface of the getter material contained in the getter structure (30) formed on at least a portion of the inner wall of the vacuum chamber (20), the first actuator (19_1) and the second actuator (19_2) can each move the resonator (15) and the antenna (16) to a first position facing each other. At this time, the resonator (15) receives high-frequency power from the first microwave power source (14) to generate a local electric field, and the antenna (16) receives high-frequency power from the second microwave power source (17) to diffuse the electric field generated in the resonator (15) and distribute it uniformly on the getter structure (30). The plasma region (PLR) formed as a result can be evenly distributed on the surface of the getter material contained in the getter structure (30).
[0124] Referring to FIG. 9 (b), when the surface of the getter material contained in the getter structure (30) is sufficiently activated, the first actuator (19_1) and the second actuator (19_2) can each move the resonator (15) and the antenna (16) to a second position different from the first position in order to reduce process interference. The second position may refer to the position of the resonator (15) and the antenna (16) when the resonator (15) and the antenna (16) are not operating, that is, when high-frequency power is not supplied to the resonator (15) and the antenna (16). For example, when surface activation of the getter material included in the getter structure (30) is completed, the first actuator (19_1) and the second actuator (19_2) can move the resonator (15) and the antenna (16) to a second position so that the resonator (15) and the antenna (16) do not interfere with other processes.
[0126] FIG. 10 is a diagram illustrating a method for forming a high vacuum using a surface activation method of a getter material using a high-frequency-based plasma according to some embodiments of the present invention. For convenience of explanation, details identical or similar to those described above are omitted or briefly explained.
[0127] Referring to FIG. 10, a surface activation device (1) for a getter material using high-frequency-based plasma can adjust the pressure inside a vacuum chamber (20) to a first reference pressure using a pressure gauge (40), a control valve (50), and a vacuum pump (70) (S100).
[0128] Next, noble gas can be supplied into the vacuum chamber (20) using the noble gas supply device (60) and the control valve (50) (S200).
[0129] Next, the pressure inside the vacuum chamber (20) can be adjusted to a second reference pressure using a noble gas supply unit (60), a vacuum pump (70), and a control valve (50) (S300).
[0130] Next, a high-frequency power source is applied using a high-frequency-based plasma generator (10), and accordingly, a high-frequency-based plasma can be formed inside a vacuum chamber (20) (S400).
[0131] The high-frequency based plasma generated in the high-frequency based plasma generator (10) can activate the surface of the getter material of the getter structure (30) placed inside the vacuum chamber (20) (S500).
[0132] When the surface of the getter material of the getter structure (30) is activated, the noble gas supply unit (60) and the control valve (50) stop supplying noble gas into the vacuum chamber (20), and the high-frequency based plasma generator (10) can stop supplying high-frequency power (S600).
[0133] Next, the pressure inside the vacuum chamber (20) can be controlled to a third reference pressure or lower using the control valve (50) and the vacuum pump (70) (S700). At this time, since the surface of the getter material of the getter structure (30) is in an activated state, the time required to control the pressure inside the vacuum chamber (20) to a third reference pressure or lower is reduced, and the efficiency can be greatly increased accordingly.
[0135] The surface activation method and apparatus of a getter material using high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of being applicable to vacuum equipment containing heat-sensitive components and enabling getter activation without the risk of equipment damage, as they can induce the removal of oxide films on the getter surface and the enhancement of reactivity without a high-temperature environment, compared to conventional getter activation technology that relies on high-temperature heating methods.
[0136] In addition, the method and apparatus for surface activation of a getter material using high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of significantly reducing the operating time and energy consumption of the entire vacuum system because, unlike conventional thermal activation methods which require heating for several hours at 180°C or for tens of minutes at 450°C or higher, the method of the present invention can locally transfer energy to the getter surface in a short time using plasma.
[0137] In addition, the method and apparatus for surface activation of a getter material using a high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, have the advantage of being practically applicable to various vacuum systems as plasma can be formed even over a wide available pressure range, and can effectively suppress unnecessary damage to the getter material or contamination caused by sputtering because getter activation can be induced in a relatively low ion energy region (several eV).
[0138] In addition, the method and apparatus for surface activation of a getter material using a high-frequency-based plasma according to some embodiments of the present invention, and the method for forming a high vacuum using the same, can stably form a plasma having high and uniform electron density and ion density, so the getter activation efficiency relative to input power is excellent, and there is an advantage of being stably applicable even in vacuum equipment design and experimental environments requiring precision.
[0140] The above description is merely an illustrative explanation of the technical concept of the present embodiment, and a person skilled in the art to which the present embodiment belongs would be able to make various modifications and variations within the scope of the essential characteristics of the present embodiment. Accordingly, the present embodiments are intended to explain, not limit, the technical concept of the present embodiment, and the scope of the technical concept of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present embodiment.
Claims
Claim 1 A method for surface activation of a getter material using a high-frequency-based plasma, comprising: a step of adjusting the pressure inside a vacuum chamber containing a getter material to a first reference pressure; a step of supplying a noble gas into the vacuum chamber; a step of adjusting the pressure inside the vacuum chamber to a second reference pressure; a step of forming a plasma on the surface of the getter material contained in the vacuum chamber using electrons accelerated by an electric field by applying a high-frequency power source using either radio frequency power or microwave power; and a step of activating the surface of the getter material under low temperature or non-heating conditions using the plasma formed using the high-frequency power source. Claim 2 A method for surface activation of a getter material using a high-frequency-based plasma according to claim 1, wherein the step of forming a plasma on the surface of the getter material contained in the vacuum chamber by applying the high-frequency power comprises: providing the radio frequency power to the electrodes using a radio frequency (RF) power source; forming the electric field between the electrodes; and forming the plasma by ionizing the noble gas using the electrons accelerated by the electric field, wherein the electrodes comprise the getter material. Claim 3 A method for surface activation of a getter material using high-frequency-based plasma, wherein, in claim 2, the electrode comprises a metal plate coated with the getter material. Claim 4 A method for surface activation of a getter material using high-frequency-based plasma, wherein, in claim 2, the electrode comprises a metal plate and the getter material located on the metal plate. Claim 5 A method for surface activation of a getter material using a high-frequency-based plasma according to claim 1, wherein the step of forming plasma on the surface of the getter material contained in the vacuum chamber by applying the high-frequency power supply comprises: providing the radio frequency power to a coil using the radio frequency power supply; forming an alternating magnetic field and the electric field inside the vacuum chamber using the coil; and forming the plasma by ionizing the noble gas using the electrons accelerated by the electric field. Claim 6 A method for surface activation of a getter material using a high-frequency-based plasma, wherein, in claim 5, the getter material is located on at least a portion of the inner wall of the vacuum chamber. Claim 7 A method for surface activation of a getter material using high-frequency-based plasma, wherein, in claim 5, the coil is disposed outside the vacuum chamber. Claim 8 A method for surface activation of a getter material using a high-frequency-based plasma according to claim 1, wherein the step of forming a plasma on the surface of the getter material contained in the vacuum chamber by applying the high-frequency power comprises: providing the microwave power to a coaxial transmission line resonator (CTLR) using a microwave (MW) power source; forming the electric field using the coaxial transmission line resonator; diffusing the electric field using an antenna; and forming the plasma by ionizing the noble gas using the electrons accelerated by the electric field. Claim 9 A high-frequency-based plasma generator that generates plasma using a high-frequency power source utilizing either radio frequency power or microwave power; a vacuum chamber in which the plasma is formed; a getter structure disposed within the vacuum chamber; a noble gas supply unit that supplies noble gas within the vacuum chamber; and a vacuum pump for forming vacuum conditions within the vacuum chamber, wherein the surface of the getter structure is activated under low temperature or non-heating conditions by the plasma generated by the high-frequency-based plasma generator. Claim 10 In claim 9, the high-frequency-based plasma generator comprises: a radio frequency power source for generating radio frequency power; a first electrode connected to the radio frequency power source; a second electrode connected to ground; and a matcher for matching the impedance between the radio frequency power source and the first electrode, a surface activation device for a getter material using a high-frequency-based plasma. Claim 11 A surface activation device for a getter material using high-frequency-based plasma according to claim 10, wherein at least one of the first electrode and the second electrode comprises the getter structure. Claim 12 In claim 9, the high-frequency based plasma generator comprises: a radio frequency power source for generating the radio frequency power; a coil connected to the radio frequency power source and disposed outside the vacuum chamber; and a matcher for matching the impedance between the radio frequency power source and the coil, a surface activation device for a getter material using a high-frequency based plasma. Claim 13 In claim 12, the surface activation device for a getter material using high-frequency-based plasma, wherein the getter structure is disposed on at least a portion of the inner wall of the vacuum chamber. Claim 14 In claim 9, the high-frequency-based plasma generator comprises: first and second microwave power sources for generating the microwave power; a resonator connected to the first microwave power source and forming an electric field inside the vacuum chamber; an antenna connected to the second microwave power source and diffusing the electric field formed in the resonator; and a matcher for matching the impedance between the first microwave power source and the resonator, a surface activation device for a getter material using high-frequency-based plasma. Claim 15 In claim 14, the surface activation device of a getter material using high-frequency-based plasma, wherein the resonator comprises a coaxial transmission line resonator. Claim 16 A surface activation device for a getter material using a high-frequency-based plasma according to claim 14, further comprising: a first actuator connected to the resonator; and a second actuator connected to the antenna, wherein, to form the plasma, the first and second actuators each move the resonator and the antenna to a first position facing each other. Claim 17 A surface activation device for a getter material using a high-frequency-based plasma, wherein, in claim 16, when the surface of the getter structure is activated, the first and second actuators each move the resonator and the antenna to a second position different from the first position. Claim 18 A surface activation device for a getter material using high-frequency-based plasma according to claim 9, further comprising: a pressure gauge for measuring the pressure within the vacuum chamber; and a control valve for controlling the pressure within the vacuum chamber. Claim 19 In claim 9, the vacuum pump comprises a turbomolecular pump and a dry pump, a surface activation device for getter materials using high-frequency-based plasma. Claim 20 A method for forming a high vacuum using a method for surface activation of a getter material using a high-frequency-based plasma, comprising: a step of adjusting the pressure inside a vacuum chamber containing a getter material to a first reference pressure; a step of supplying a noble gas into the vacuum chamber; a step of adjusting the pressure inside the vacuum chamber to a second reference pressure; a step of applying a high-frequency power source using either radio frequency power or microwave power to form a plasma on the surface of the getter material contained in the vacuum chamber; a step of activating the surface of the getter material under low temperature or non-heating conditions using the formed plasma; and a step of adjusting the pressure inside the vacuum chamber to a third reference pressure or lower.