Substrate Inspection Method

Abstract

A substrate measurement method is provided, comprising: setting measurement conditions for measurement; inserting a substrate having a pattern formed thereon into a substrate measurement device; performing the measurement by scanning the pattern with the measurement conditions; and detecting defects in the pattern and repairing damage; wherein setting measurement conditions for measurement includes: obtaining a dose value for the measurement conditions and storing it as data; and accumulating information regarding the conditions for measurement and damage inducing information in a database, and detecting defects in the pattern and repairing damage includes: inserting the substrate with the defects in the pattern into a damage repair substrate measurement device; and repairing damage to the substrate with the defects in the pattern through a physical technique.

Description

Technology Field

[0001] The present invention relates to a substrate measurement method, and more specifically, to a substrate measurement method capable of quantifying measurement conditions through the establishment of a monitoring system and responding to damage to the substrate. Background Technology

[0003] With the miniaturization of semiconductor processes, the importance of metrology technology is growing for purposes such as preventing process accidents, simplifying processes, shortening process development, and reducing production costs. In particular, for semiconductor memory devices involving hundreds of process steps, ultra-precision metrology techniques are required to verify process results. Among these, as the pattern length scale decreases from the micro to the nano scale, metrology equipment utilizing radiation with nano-scale wavelengths capable of observing these patterns can be employed. For radiation, X-rays or EUV (Extreme Ultraviolet) can be utilized. Measurement equipment using radiation can detect the structure, thickness, constituent components, and binding energies of patterns. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a method for quantifying measurement conditions and diagnosing / optimizing measurement conditions.

[0006] The problem that the present invention aims to solve is to provide a method for repairing damage caused by measurement.

[0007] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0009] To achieve the above-mentioned problem, a substrate measurement method according to an embodiment of the present invention comprises: setting measurement conditions for measurement (S1); inserting a substrate having a pattern formed thereon into a substrate measurement device; performing the measurement by scanning the pattern with the above-mentioned measurement conditions; and detecting defects in the pattern and repairing damage; wherein setting the measurement conditions for measurement includes: obtaining a dose value for the above-mentioned measurement conditions and storing it as data; and accumulating the measurement conditions and damage-causing information in a database, and detecting defects in the pattern and repairing damage may include: inserting the substrate with the defect in the pattern into a damage-repairing substrate measurement device; and repairing damage to the substrate with the defect in the pattern through a physical technique. The method may include, but is not limited to, setting measurement conditions for the measurement, calculating and obtaining a dose value for the measurement conditions; accumulating measurement conditions and damage-causing information in a database; and forming an algorithm based on the accumulated database; and detecting defects in the patterns and repairing damage may include: inserting a substrate with defects in each of the patterns into a damage-repairing substrate measurement device; and repairing damage to the substrate with defects in the patterns through a physical technique.

[0010] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0012] According to the substrate measurement method of the present invention, a monitoring system can be established to respond to problems occurring during measurement.

[0013] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below. Brief explanation of the drawing

[0015] FIGS. 1 and FIGS. 2 are schematic diagrams showing a substrate measurement device according to embodiments of the present invention. FIG. 3 is a flowchart illustrating a substrate measurement method according to embodiments of the present invention. Figure 4 is a flowchart that additionally explains the method of setting conditions according to the flowchart of Figure 3. FIGS. 5 to 7 are drawings sequentially illustrating a substrate measurement method according to the flowchart of FIG. 3. Specific details for implementing the invention

[0016] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Throughout the entire specification, the same reference numerals may refer to the same components.

[0018] FIGS. 1 and FIGS. 2 are schematic diagrams showing a substrate measuring device (A) according to embodiments of the present invention.

[0019] Referring to FIGS. 1 and 2, a substrate measuring device (A) may be provided. The substrate measuring device (A) may include a light source (1), a detector (3), and a stage (5).

[0020] A light source (1) may be positioned above the stage (5). The light source (1) may generate X-rays, but is not limited thereto. For example, the light source (1) may generate EUV. The light source (1) may irradiate incident X-rays (X1) toward a substrate (W) on the stage (5). The light source (1) may generate incident X-rays (X1) by colliding electrons accelerated in a vacuum and high voltage state with a metal target. At least a portion of the incident X-rays (X1) irradiated toward the substrate (W) may collide with the substrate (W). As illustrated in FIG. 1, the incident X-rays (X1) that collide with the substrate (W) may generate reflected X-rays (X2) which can be received by the detector (3). More specifically, at least a portion of the incident X-rays (X1) irradiated toward the substrate (W) may collide with atoms constituting the substrate (W). At this time, the electron of the collided atom may become excited. Afterwards, the electron of the collided atom may return to the ground state. When the electron of the collided atom returns to the ground state, energy may be emitted. At this time, the emitted energy may generate reflected X-rays (X2). However, it is not limited to this, and as shown in FIG. 2, X-rays incident on the substrate (W) may pass through the substrate (W) to generate transmitted X-rays (X3).

[0021] The detector (3) may be positioned above the stage (5). The detector (3) can detect that a light source transmits, reflects, and scatters from the substrate (W). The detector (3) can generate a signal provided from the substrate (W).

[0023] FIG. 3 is a flowchart showing a substrate measurement method (S) according to embodiments of the present invention.

[0024] Referring to FIG. 3, the method may include setting measurement conditions for measurement (S1), inserting a substrate (W) with a pattern formed thereon into a substrate measurement device (A) (S2), performing measurement by scanning the pattern with the measurement conditions (S3), and detecting defects in the pattern to repair damage (Re) (S4).

[0025] Hereinafter, a substrate measurement method (S) according to the flowchart will be explained sequentially with reference to FIGS. 5 to 7.

[0027] FIG. 4 is a flowchart additionally explaining a method for setting conditions according to the flowchart of FIG. 3, and FIG. 5 to 7 are drawings sequentially showing a method for measuring substrates according to the flowchart of FIG. 3.

[0028] Referring to FIGS. 4 and 5, setting measurement conditions for measurement (S1) may include obtaining a dose value for the measurement conditions and storing it as data. More specifically, setting measurement conditions for measurement (S1) may calculate the dose generated according to various parameters such as X-ray wavelength, measurement location, and irradiation time through a computer system (CS) and store it as data. Additionally, setting measurement conditions for measurement (S1) may include accumulating measurement conditions and damage information for measurement in a database (S'1). More specifically, the accumulated database may be stored and damage information according to the measurement conditions may be stored. Setting measurement conditions for measurement (S1) may include forming an algorithm based on the accumulated database (S'2). Here, the database and the algorithm may include a function that indicates the correlation between the measurement conditions and whether damage occurs. Additionally, setting measurement conditions for measurement (S1) may provide a guide by comparing existing conditions with the measurement conditions. More specifically, setting measurement conditions for measurement (S1) may include providing guidance by comparing measurement results when measurement is performed under the measurement conditions and existing conditions. Providing guidance may include self-diagnosing by calculating the conditions that cause damage among the measurement conditions and existing conditions and the conditions set by the user. Additionally, providing guidance may include identifying and optimizing new measurement conditions through a database and algorithms (S'3). That is, when adjusting various parameters for inputting measurement conditions through the feedback function of the database and algorithms, diagnostic feedback regarding whether damage occurs in the input conditions or an optimal process recipe may be presented. Subsequently, the computer system (CS) may provide guidance or data to the substrate measurement device (A).Setting measurement conditions for measurement (S1) may be applied to a device that generates reflected X-rays (X2) and / or EUV, but is not limited thereto. For example, it may be applied to a device that generates transmitted X-rays and / or EUV.

[0029] The substrate (W) can be introduced into the substrate measuring device (A) by means of a robot arm or the like and placed on the stage (5). Inserting the patterned substrate (W) into the substrate measuring device (A) (S2) may include placing the patterned substrate (W) on the stage (5).

[0030] Referring to FIG. 6, performing measurement by scanning a pattern as a measurement condition (S3) may include maintaining a constant ambient temperature. More specifically, since a temperature difference in the surroundings occurs due to the measurement, performing measurement may include detecting and maintaining this. Performing measurement by scanning a pattern as a measurement condition (S3) may include obtaining signals of patterns engraved on the substrate (W). More specifically, performing measurement by scanning a pattern as a measurement condition (S3) may involve the light source (1) of the substrate measurement device (A) irradiating X-rays and / or EUV, and the detector (3) detecting transmission, reflection, and scattering. The detector (3) that detects X-rays and / or EUV can obtain signals of patterns engraved on the substrate (W). Accordingly, the substrate (W) can be checked and verified (DE) for damage. After the verification (DE) for damage to the substrate (W), if damage occurs, the substrate (W) can be transferred to a damage repair device. Additionally, if damage is not confirmed, the substrate (W) can be transferred to the next process step. Here, damage may occur due to a substrate measurement device (A) that generates reflected X-rays (X2) and / or EUV, but is not limited thereto. For example, damage may occur due to a substrate measurement device (A) that generates transmitted X-rays (X3) and / or EUV.

[0032] Referring to FIG. 7, detecting defects in the pattern and repairing (Re) the damage (S4) may include applying heat treatment (HT) and physical methods to the substrate (W) after measurement is completed. More specifically, detecting defects in the pattern and repairing (Re) the damage (S4) may include inserting the substrate (W) with defects in each of the patterns into a damage repair device (RE) and repairing the damage to the substrate (W) with defects in the patterns through physical techniques. Repairing (Re) the damage to the substrate (W) with defects in the patterns through physical techniques may include a heat treatment (HT) method comprising at least one of quenching, tempering, annealing, or blanching. That is, heat treatment (HT) or additional processes may be performed for repair (Re) only on the damaged substrate (W). Detecting defects in the pattern and repairing the damage (S4) may further include analyzing the difference in data between the start and end times of measurement. Additionally, detecting defects in the pattern and repairing damage (S4) may include repairing damage based on an algorithm (AI) regarding whether damage has occurred, as described in FIGS. 4 and 5. Subsequently, data regarding damage can be accumulated in a database (DB) to form the algorithm. The algorithm (AI) can be utilized for damage repair as described above. That is, it can provide data for damage repair. By doing so, performance degradation of the substrate occurring after measurement can be addressed.

[0034] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0036] 1: Light source 3: Detector X1: Incident X-ray X2: Reflected X-ray X3: Transmitted X-rays CS: Computer Systems DB: Database AI: Algorithm

Claims

Claim 1 A method for measuring a substrate, comprising: setting new measurement conditions for measurement; inserting a substrate having a pattern formed thereon into a substrate measurement device; and performing the measurement by scanning the pattern with the new measurement conditions; wherein setting new measurement conditions for measurement comprises: inputting user-set conditions; calculating a dose value for the user-set conditions and storing it in a database; accumulating existing measurement conditions and damage-causing information among the existing measurement conditions in the database; performing self-diagnosis by comparing the damage-causing information and the user-set conditions based on the database; and optimizing the user-set conditions into the new measurement conditions based on the results of the self-diagnosis. Claim 2 A substrate measurement method according to claim 1, wherein detecting defects in the pattern and repairing damage further includes analyzing the difference between the measurement start and end time data. Claim 3 In claim 1, the substrate measurement method comprising a heat treatment method including at least one of quenching, tempering, annealing, or buffing, wherein the damage to the substrate having defects in the pattern is repaired through a physical technique. Claim 4 A substrate measurement method according to claim 1, wherein the measurement performed includes maintaining the ambient temperature constant. Claim 5 A substrate measurement method according to claim 1, wherein performing the measurement includes obtaining an inspection signal of the pattern. Claim 6 A substrate measurement method according to claim 1, wherein setting new measurement conditions for the measurement includes providing a guide by comparing the measurement results when the measurement is performed under the user-set conditions and the existing measurement conditions. Claim 7 A substrate measurement method according to claim 1, further comprising detecting a defect in the pattern and repairing damage, wherein detecting a defect in the pattern and repairing damage comprises: inserting the substrate with the defect in the pattern into a damage repair substrate measurement device; and repairing damage to the substrate with the defect in the pattern through a physical technique. Claim 8 A substrate measurement method comprising: setting new measurement conditions for measurement; inserting a substrate having a pattern formed thereon into a substrate measurement device; performing the measurement by scanning the patterns with the measurement conditions; and detecting defects in the patterns and repairing damage, wherein setting new measurement conditions for measurement includes: inputting user-set conditions; calculating and obtaining a dose value for the user-set conditions; accumulating existing measurement conditions and damage-causing information among the existing measurement conditions in a database; and forming an algorithm based on the accumulated database; and determining the user-set conditions through the database and the algorithm, and optimizing the user-set conditions into the new measurement conditions, wherein the algorithm includes a functionalization function representing a correlation between the existing measurement conditions and the damage-causing information, and detecting defects in the patterns and repairing damage includes: inserting the substrate with defects in each of the patterns into a damage-repairing substrate measurement device; and repairing damage to the substrate with defects in the patterns through a physical technique. Claim 9 In claim 8, the method of measuring a substrate includes performing the measurement by acquiring signals of the patterns. Claim 10 In claim 8, the method of detecting defects in the pattern and repairing damage includes verifying the damage and creating a database.

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