Susceptor assembly and chemical vapor deposition apparatus

Abstract

The present invention relates to a susceptor assembly and a chemical vapor deposition apparatus, and more specifically, to a susceptor assembly and a chemical vapor deposition apparatus capable of reducing temperature variation of a substrate when depositing a silicon carbide (SiC) film or the like on a substrate.

Description

Technology Field

[0001] The present invention relates to a susceptor assembly and a chemical vapor deposition apparatus, and more specifically, to a susceptor assembly and a chemical vapor deposition apparatus capable of reducing temperature variation of a substrate when depositing a silicon carbide (SiC) film or the like on a substrate. Background Technology

[0002] Recently, demand for SiC power devices has surged, and the related market is expected to continue rising.

[0003] Such SiC power semiconductor devices can be fabricated by placing a substrate in a reaction chamber and growing a silicon carbide (SiC) single crystal on a substrate placed on a susceptor by supplying a mixture of process gas and carrier gas into the reaction chamber and thermally decomposing it.

[0004] In the case of a chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted that includes an induction heating coil formed spirally at the bottom of the susceptor. In this case, the temperature of the induction heating coil drops in the central part, causing a temperature variation with respect to the substrate placed on the susceptor, making it difficult to proceed smoothly with the process on the substrate. The problem to be solved

[0005] The present invention aims to provide a chemical vapor deposition apparatus capable of reducing the temperature variation of a substrate in order to solve the above-mentioned problems. means of solving the problem

[0006] The objective of the present invention as described above can be achieved by a susceptor assembly characterized by having a body portion having a recess formed therein into which a substrate or a satellite on which the substrate is seated is inserted, a susceptor having a protrusion extending downward from the body portion, and a heater for heating the susceptor.

[0007] Here, the diameter of the protrusion is 35 mm to 50 mm, and the height of the protrusion may be smaller than the diameter.

[0008] In addition, the above protrusion can be detachably connected to the body part.

[0009] Furthermore, the cross-sectional area of ​​the above-mentioned protrusion may not be constant, and the cross-sectional area of ​​the above-mentioned protrusion may decrease as it moves further away from the body part.

[0010] In addition, a gas passage may be further provided that penetrates the protrusion or the body portion and connects to the concave portion.

[0011] In this case, the gas passage may be provided with a main gas passage penetrating the protrusion or the body part, and a plurality of sub-gas passages branching from the main gas passage and connected to the concave part.

[0012] In addition, the diameter of the above gas channel may be 5 mm or less.

[0013] Meanwhile, the heater is composed of an induction heating coil and may include a first heater portion disposed at the lower part of the body portion and a second heater portion disposed to surround the protrusion portion.

[0014] In this case, the first heater part is configured in a shape that is bent and wound from the lower part of the body part toward the center part, and the second heater part may be arranged to wrap the protrusion multiple times along the vertical direction of the protrusion.

[0015] Meanwhile, the cross-section of the first heater part corresponds to a rectangle with a long horizontal direction, and the cross-section of the second heater part may correspond to a square or a rectangle with a long horizontal direction.

[0016] In addition, the second gap between the protrusion and the second heater part may be 1.0 to 1.5 times the first gap between the first heater part and the body part.

[0017] Furthermore, the first gap between the first heater part and the body part may be 5 mm to 20 mm.

[0018] In addition, the cross-sectional area of ​​the first heater part and the second heater part may be 60 mm² to 250 mm².

[0019] Furthermore, the coils forming the first heater section may not have a constant spacing.

[0020] Meanwhile, the spacing of the coils forming the first heater part may be 3 mm to 30 mm.

[0021] In this case, the first heater part and the second heater part may be formed as a single unit.

[0022] In addition, the gap between the second heater part and the protrusion may not be constant.

[0023] Meanwhile, the objective of the present invention as described above can be achieved by a chemical vapor deposition apparatus comprising a chamber, an inner chamber provided inside the chamber, a susceptor assembly provided inside the inner chamber on which the substrate is placed and which heats the substrate, and an upper plate provided inside the inner chamber and which is provided on the upper part of the susceptor assembly and which provides a processing space between the susceptor assembly and the susceptor assembly for processing the substrate, wherein the susceptor assembly comprises a body portion having a concave portion into which the substrate or a satellite on which the substrate is placed is inserted, a susceptor having a protrusion protruding downward from the body portion, and a heater for heating the susceptor.

[0024] Furthermore, the heater may be composed of an induction heating coil and may include a first heater portion disposed at the lower part of the body portion and a second heater portion disposed to surround the protrusion portion.

[0025] Meanwhile, the cross-section of the first heater part corresponds to a rectangle with a long horizontal direction, and the cross-section of the second heater part may correspond to a square or a rectangle with a long horizontal direction.

[0026] In addition, the second gap between the protrusion and the second heater part may be 1.0 to 1.5 times the first gap between the first heater part and the body part.

[0027] Furthermore, the body portion of the susceptor may be fixed to the chamber or the inner chamber, and the lower portion of the protrusion of the susceptor may be spaced apart from the chamber or the inner chamber. Effects of the invention

[0028] According to the present invention having the above-described configuration, a protrusion is provided at the lower part of the body portion of the susceptor, and by heating not only the body portion but also the protrusion together, the temperature variation of the substrate can be reduced, thereby improving the thickness and doping uniformity of the film on the substrate. Brief explanation of the drawing

[0029] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention, FIG. 2 is a side view illustrating a susceptor assembly according to one embodiment, FIG. 3 is a side view illustrating a susceptor assembly according to another embodiment, FIG. 4 is a perspective view of a heater, Fig. 5 is a plan view of the heater, FIG. 6 is a side view illustrating a susceptor assembly according to another embodiment. Specific details for implementing the invention

[0030] Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings.

[0031] FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention.

[0032] Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may be equipped with a chamber (100). Various components may be provided in the chamber (100).

[0033] A receiving space (110) is provided on the inside of the chamber (100), and an inner chamber (300) may be provided in the receiving space (110).

[0034] A gas supply unit (200) may be connected to one side of the chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312).

[0035] The above gas supply unit (200) may be provided with a gas inlet pipe (220) that extends from the outside of the chamber (100) to the inside of the chamber (100) and is connected to the processing space (312). A supply port (210) for supplying gas may be formed in the gas inlet pipe (220) located outside the chamber (100).

[0036] Meanwhile, an inner chamber (300) may be provided inside the chamber (100), and a processing space (312) for the substrate (W) may be provided inside the inner chamber (300). By adopting a so-called double chamber structure in this way, the possibility of particle contamination on the substrate (W) can be reduced, and the process on the substrate (W) can be carried out more smoothly.

[0037] Additionally, the inner chamber (300) can serve as a thermal insulation member. That is, the inner chamber (300) is positioned to surround the susceptor assembly (330) described later and may be composed of carbon felt or graphite felt, etc. Alternatively, the inner chamber (300) may be composed of graphite-coated carbon felt or carbon-coated graphite felt, etc.

[0038] In this way, when the inner chamber (300) or the heat-blocking member is provided, the heat generated by the heater (340) of the susceptor assembly (330) is not radiated to the outside of the inner chamber (300), thereby allowing the processing space (312) to be heated more effectively.

[0039] Specifically, the substrate (W) or a satellite (328) on which the substrate (W) is placed is placed inside the inner chamber (300), and a susceptor assembly (330) for heating the substrate (W) and an upper plate (310) provided on the upper part of the susceptor assembly (330) inside the inner chamber (300) and providing a processing space between the susceptor assembly (330) and the substrate (W) for processing may be provided.

[0040] Additionally, the susceptor assembly (330) may have a body portion (322) (see FIG. 2) having a recess (326) into which the substrate (W) or a satellite (328) on which the substrate (W) is seated is inserted, a protrusion (324) (see FIG. 2) protruding downward from the body portion (322), and a heater (340) for heating the susceptor (320).

[0041] The chemical vapor deposition apparatus (1000) according to the present invention is an apparatus for depositing a silicon carbide (SiC) film on the surface of the substrate (W), and can grow a single crystal of silicon carbide (SiC) on the upper surface of the substrate (W) by supplying process gas, etc. from the side of the processing space (312) by the gas supply unit (200) to induce a laminar flow of gas inside the processing space (312).

[0042] One side of the inner chamber (300) is connected to the gas inlet pipe (220), so that process gas, etc. can be supplied through the gas inlet pipe (350).

[0043] Meanwhile, as described above, when a silicon carbide (SiC) film is deposited on the upper surface of the substrate (W), the process temperature corresponds to a high temperature of approximately 1600 degrees or higher. Therefore, the upper plate (310) and susceptor (320) constituting the processing space (312) can use graphite, silicon carbide coated graphite (SiC Coated Graphite), TaC coated graphite (Tac Coated Graphite), or silicon carbide material produced by CVD sintering to increase thermal stability and thermal conductivity, thereby efficiently heating the substrate and reducing power consumption.

[0044] FIG. 2 is a side view illustrating the susceptor assembly (330).

[0045] Referring to FIGS. 1 and 2, the processing space (312) is provided between the aforementioned upper plate (310) and the susceptor (320).

[0046] The above susceptor (320) may have a body portion (322) and a protrusion (324) formed by protruding downward from the body portion (322).

[0047] A concave portion (326) is formed on the upper surface of the body portion (322), and the substrate (W) or a satellite (328) on which the substrate (W) is seated may be seated in the concave portion (326). The protrusion (324) protrudes locally from the central portion of the body portion (322) toward the lower portion, and the diameter or cross-sectional area of ​​the protrusion (324) may be smaller than the diameter or cross-sectional area of ​​the substrate (W) and the satellite (328).

[0048] Meanwhile, when the substrate (W) or the satellite (328) is inserted into the concave portion (326), the substrate (W) or the satellite (328) may be rotatably provided on the susceptor (320).

[0049] That is, a gas passage (350) is further provided that penetrates the protrusion (324) or the body part (322) and is connected to the concave part (326), and floating gas, etc. is supplied toward the lower surface of the substrate (W) or the satellite (328) through the gas passage (350) so that the substrate (W) or the satellite (328) can be rotated.

[0050] During the process on the substrate (W), the substrate (W) can be rotated so that the process gas supplied from the side reacts uniformly on the entire surface of the substrate (W).

[0051] For example, as shown in FIG. 2, the gas passage (350) may be provided with a main gas passage (352) that passes through the protrusion (324) and extends from the lower part of the protrusion (324) toward the upper part, and a plurality of sub-gas passages (354, 356) that branch off from the main gas passage (352) and are connected to the concave part (326).

[0052] Floating gas supplied from a floating gas storage unit (not shown) can be injected into the concave portion (326) through the main gas passage (352) and the sub-gas passages (354, 356) to rotate the substrate (W) or the satellite (328). In this case, the sub-gas passages (354, 356) can be connected at a predetermined angle with respect to the concave portion (326). Thus, the substrate (W) or the satellite (328) can be rotated by the floating gas injected through the sub-gas passages (354, 356).

[0053] The diameter of the gas channel (350) can be appropriately determined, for example, 5 mm or less. If the diameter of the gas channel (350) exceeds 5 mm, the amount of floating gas required increases, and the temperature uniformity of the edge region of the substrate (W) may decrease due to an excessive amount of floating gas.

[0054] Meanwhile, FIG. 3 is a side view illustrating a susceptor assembly (330') according to another embodiment.

[0055] Referring to FIG. 3, in the case of the susceptor assembly (330') according to the present embodiment, the main gas passage (362) of the gas passage (360) may be extended through the body part (322).

[0056] That is, the main gas passage (362) may extend from the side of the body part (322) to the central part. The main gas passage (362) may be branched into a plurality of sub-gas passages (364, 366) at the central part of the body part (322).

[0057] Meanwhile, referring to FIGS. 1 and 2, a gas exhaust pipe (400) for exhausting gas from the processing space (312) may be connected to the other side of the inner chamber (300). The gas exhaust pipe (400) may extend to the outside of the chamber (100) to exhaust gas from the processing space (312) to the outside of the chamber (100).

[0058] Additionally, the inner chamber (300) may be equipped with a heater (340) for heating the substrate (W) and the processing space (312) to a process temperature. The heater (340) may be installed at the bottom of the susceptor (320) and may be composed of an induction heating coil. Since the induction heating coil can be used semi-permanently after installation, it has advantages in terms of maintenance and equipment operation costs.

[0059] In the case of a chemical vapor deposition apparatus according to the prior art, a configuration is generally adopted in which an induction heating coil formed spirally at the bottom of the susceptor (320). In this case, the temperature of the induction heating coil decreases in the central part, causing a temperature difference with respect to the substrate (W), making it difficult to proceed smoothly with the process on the substrate (W).

[0060] In order to solve the aforementioned problems, the present invention is provided with a protrusion (324) formed to protrude downward from the body portion (322) of the susceptor (320), and a heater (340) for heating the body portion (322) and the protrusion (324) is provided.

[0061] That is, the heater (340) may have a first heater part (342) disposed at the lower part of the body part (322) and a second heater part (344) disposed to surround the protrusion (324).

[0062] FIG. 4 is a perspective view of the heater (340), and FIG. 5 is a plan view of the heater (340).

[0063] Referring to FIGS. 2, 4, and 5, the first heater part (342) is positioned at a predetermined first interval (A1) from the lower surface of the body part (322), and the second heater part (344) can be positioned at a predetermined second interval (A2) from the protrusion (324).

[0064] Accordingly, the body part (322) can be heated by the first heater part (342), and at the same time, the protrusion part (324) can be heated by the second heater part (344) to reduce the temperature difference of the substrate (W).

[0065] The above-mentioned protrusion (324) is formed in a cylindrical shape, but is not limited thereto and can be appropriately deformed. Additionally, the above-mentioned protrusion (324) may be formed integrally with the body part (322), but the above-mentioned protrusion (324) may be detachably connected to the body part (322).

[0066] That is, when the size of the body part (322) or the diameter of the substrate (W) changes, the diameter (D) or height (H) of the protrusion (324) is varied in response and mounted on the body part (322), thereby increasing the heat transfer effect caused by heating the protrusion (324).

[0067] As shown in FIGS. 4 and 5, the first heater part (342) may have a shape that is bent and wound from the lower part of the body part (322) toward the center. Additionally, the second heater part (344) may be connected to the first heater part (342) at the center of the first heater part (342). The first heater part (342) and the second heater part (344) may be manufactured separately or formed integrally.

[0068] The second heater section (344) may be arranged to wrap around the protrusion (324) multiple times along the vertical direction of the protrusion (324). Although it is shown in the drawing as having three layers or three turns from top to bottom, the number of such turns or layers can be appropriately adjusted according to the height of the protrusion (324).

[0069] Meanwhile, as shown in FIG. 2, the first heater part (342) may have a rectangular cross-section that is relatively long in the horizontal direction so as to heat the body part (322) located at the top. By doing so, the area facing the body part (322) from the first heater part (342) is widened, allowing the body part (322) to be heated effectively.

[0070] Additionally, the second heater part (344) may have a square cross-section or a rectangular shape with a relatively long horizontal direction, although this is not shown in the drawing, so as to be able to heat the protrusion (324).

[0071] In this case, the cross-sectional area of ​​the first heater part (342) and the second heater part (344) may be 60 mm² to 250 mm².

[0072] If the cross-sectional area of ​​the first heater part (342) and the second heater part (344) is less than 60 mm², the cooling water flowing inside the coil of the heater part is reduced, and there is a risk of damage to the coil due to high-temperature water. On the other hand, if the cross-sectional area of ​​the first heater part (342) and the second heater part (344) exceeds 250 mm², the number of turns that can be wound on the coil is reduced by the increase in cross-sectional area, which may result in a decrease in induction heating efficiency.

[0073] Meanwhile, according to the inventor's experiments, it was discovered that when the susceptor (320) is heated by the heater (340), the shape of the protrusion (324) and the distance between the heater (340) and the susceptor (320) are important.

[0074] For example, when looking at the diameter (D) and height (H) of the protrusion (324), it was found that the heating efficiency by the protrusion (324) is excellent when the height (H) of the protrusion (324) is smaller than the diameter (D).

[0075] For example, the diameter (D) of the protrusion (324) can be approximately 35 mm to 50 mm, and the height (H) of the protrusion (324) can be smaller than the diameter (D) of the protrusion (324).

[0076] If the diameter (D) of the protrusion (324) is less than 35 mm, the temperature of the central part of the body (322) is lowered, and thus the temperature uniformity is reduced. Conversely, if the diameter (D) of the protrusion (324) exceeds 50 mm, excessive heat is conducted to the protrusion (324) and the central part of the body (322), causing the temperature of the central part to be higher than that of the edge of the substrate (W), and thus the temperature uniformity may be reduced.

[0077] Additionally, when examining the gap between the heater (340) and the susceptor (320), it was found that the heating efficiency by the body part (322) and the protrusion (324) is superior when the second gap (A2) between the protrusion (324) and the second heater part (344) is larger than the first gap (A1) between the first heater part (342) and the body part (322).

[0078] For example, the second gap (A2) between the protrusion (324) and the second heater part (344) may be 1.0 to 1.5 times the first gap (A1) between the first heater part (342) and the body part (322).

[0079] In this case, the first gap (A1) between the first heater part (342) and the body part (322) may be approximately 5 mm to 20 mm, and the second gap (A2) between the protrusion (324) and the second heater part (344) may be approximately 12 mm to 30 mm.

[0080] If the first gap (A1) is smaller than 5 mm, the induction heating efficiency for the body part (322) increases, causing the temperature at the edges of the body part (322) to rise compared to the center, and thus the temperature uniformity may decrease. On the other hand, if the first gap (A1) exceeds 20 mm, the induction heating efficiency for the body part (322) decreases, causing the temperature at the edges of the body part (322) to drop, and thus the temperature uniformity may also decrease.

[0081] In addition, if the second gap (A2) is less than 1.0 times the first gap (A1), the induction heating efficiency for the protrusion (324) in the second heater part (344) increases, and excessive heat is conducted to the central part of the protrusion (324) and the body part (322), causing the temperature of the central part to be higher than that of the edge of the substrate (W), which may result in a decrease in temperature uniformity.

[0082] On the other hand, if the second gap (A2) is greater than 1.5 times the first gap (A1), the induction heating efficiency for the protrusion (324) decreases, and the amount of heat conducted to the central part of the protrusion (324) and the body part (322) decreases, so the temperature of the central part is lower than the edge of the substrate (W), and the temperature uniformity may decrease.

[0083] Meanwhile, as shown in FIG. 5, when the first heater part (342) has a shape that is bent and wound toward the center, the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) is not constant and can vary.

[0084] For example, the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) may be narrower at the edges and, conversely, wider as it approaches the center. As an example, the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) may be approximately 3 mm to 30 mm.

[0085] Meanwhile, in the plan view of FIG. 5, the flow of process gas with respect to the heater (340) is shown by an arrow.

[0086] That is, process gas is introduced from one side (or left) of the first heater unit (342), passes through the center of the heater (340), and then passes through the other side (or right) of the first heater unit (342).

[0087] In this case, the temperature of the process gas initially introduced to the left edge of the first heater section (342) may be relatively low. Therefore, to compensate for this low temperature, the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater section (342) may be formed narrower at the edge to increase induction heating efficiency and improve temperature uniformity.

[0088] On the other hand, since the temperature of the process gas is higher in the central part of the first heater part (342) compared to the edge, the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) can be formed wider in the central part.

[0089] If the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) is less than 3 mm, there are difficulties in manufacturing, whereas if the spacing of the coils (342A, 342B, 342C, 342D, 342E) forming the first heater part (342) exceeds 300 mm, the induction heating efficiency may be reduced.

[0090] Meanwhile, FIG. 6 is a side view illustrating a susceptor assembly (330”) according to another embodiment. In FIG. 6, the same reference numerals are used for components that are identical to those in FIG. 2 described above.

[0091] Referring to FIG. 6, the susceptor (320') may have a body portion (322') and a protrusion (324') formed by protruding downward from the body portion (322').

[0092] In this case, the protrusion (324') may be deformed from the aforementioned cylindrical shape. For example, the diameter of the protrusion (324') may vary inconsistently, or the cross-sectional area of ​​the protrusion (324') may vary inconsistently.

[0093] That is, in the case of the aforementioned Figs. 2 and 3, the protrusion (324) may be manufactured in a cylindrical shape so that the cross-sectional area or diameter may be constant.

[0094] However, in this embodiment, the protrusion (324') may be manufactured in a shape where the cross-sectional area is not constant or the diameter is not constant.

[0095] For example, the cross-sectional area of ​​the protrusion (324') may decrease as it moves further away from the body part (322'), as shown in FIG. 6. Alternatively, the diameter (D2, D1) of the protrusion (324') may decrease as it moves further away from the body part (322'). That is, the diameter (D1) of the lower part of the protrusion (324') may be smaller than the diameter (D2) of the upper part of the protrusion (324').

[0096] Additionally, although not shown in the drawing, the cross-sectional area or diameter of the protrusion (324') may increase as it moves away from the body part (322'). Such changes in cross-sectional area or diameter may increase or decrease at a constant rate, or furthermore, the cross-sectional area or diameter may change irregularly.

[0097] In addition, when having the above-described configuration, the gap between the second heater part (344) and the protrusion (324') may not be constant.

[0098] For example, as shown in FIG. 6, the third gap (A3) between the lower end of the protrusion (324') and the second heater part (344) may be different from the fourth gap (A4) between the upper end of the protrusion (324') and the second heater part (344).

[0099] In the case of the embodiment of FIG. 6, the third gap (A3) between the lower end of the protrusion (324') and the second heater part (344) may be larger than the fourth gap (A4) between the upper end of the protrusion (324') and the second heater part (344). However, this is merely an example, and the gap between the protrusion (324') and the second heater part (344) may increase or decrease in a constant manner, or may change irregularly.

[0100] As in this embodiment, by adjusting the cross-sectional area of ​​the protrusion (324') or the distance from the second heater part (344), excessive heat can be conducted to the central part of the body part (322'), thereby preventing the temperature of the central part from rising compared to the edge of the substrate (W). This can improve the temperature uniformity of heating the substrate (W).

[0101] Meanwhile, the susceptor assembly (330, 330', 330”) according to the embodiments of the present invention as described above corresponds to a type in which the body portion (322, 322') of the susceptor (320, 320') is fixedly supported in the chamber (100) or the inner chamber (300). Accordingly, the lower portion of the protrusion (324, 324') is not supported in any part of the chamber (100) or the inner chamber (300) but is spaced apart, thereby preventing heat of the susceptor (320, 320') from being lost through the protrusion (324).

[0102] The protrusions (324, 324') of such susceptor assemblies (330, 330', 330”) can be distinguished from the rotation axis of a rotary susceptor according to the prior art.

[0103] Meanwhile, although not shown in the drawings of the present specification, a plurality of auxiliary heaters capable of individually controlling the temperature in each zone along the direction of process gas flow may be further provided on the upper part of the upper plate (310) to reduce the temperature deviation caused by the process gas flow of the processing space (312).

[0104] Furthermore, in one embodiment, the auxiliary heater may be configured as a resistance heating heater. This is because if the auxiliary heater is configured as an induction heating heater, magnetic field interference may occur with the lower induction heating coil.

[0105] Additionally, to prevent magnetic field interference between the upper and lower induction coils, a single induction coil that surrounds both the upper and lower parts of the processing space (312) may be used. However, in the case of such a structure, it may be difficult to maintain the interior of the processing space (312) even when the lid of the chamber is opened or closed. Therefore, in one embodiment, it is preferable that the auxiliary heater be composed of a resistance heating heater.

[0106] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art may modify and change the present invention in various ways without departing from the spirit and scope of the invention as described in the claims below. Therefore, if a modified embodiment basically includes the components of the claims of the present invention, it should be considered to be included within the technical scope of the present invention. Explanation of the symbols

[0107] 100 : Chamber 110 : Accommodation space 200 : Gas supply unit 220: Gas inlet pipe 300 : Internal chamber 310 : Upper plate 312 : Processing space 320 : Susceptor 322 : Body part 324 : Protrusion 330 : Susceptor Assembly 340 : Heater 342: 1st heater section 344 : 2nd heater section 400 : Gas exhaust pipe 1000 : Chemical Vapor Deposition Equipment

Claims

Claim 1 A susceptor assembly comprising: a substrate or a satellite on which the substrate is seated, a body portion extending along the flow direction of a process gas, and a protrusion portion protruding downward from the body portion; and a heater for heating the susceptor; wherein the protrusion portion protrudes locally downward from the central portion of the body portion, and the diameter or cross-sectional area of ​​the protrusion portion is smaller than the diameter or cross-sectional area of ​​the substrate and the satellite, and the heater is composed of an induction heating coil, and comprises a first heater portion disposed at the lower portion of the body portion and a second heater portion disposed to surround the protrusion portion. Claim 2 A susceptor assembly according to claim 1, characterized in that the diameter of the protrusion is 35 mm to 50 mm and the height of the protrusion is smaller than the diameter. Claim 3 A susceptor assembly according to claim 1, characterized in that the protrusion is detachably connected to the body part. Claim 4 A susceptor assembly according to claim 1, characterized in that the cross-sectional area or diameter of the protrusion is not constant. Claim 5 A susceptor assembly according to claim 4, characterized in that the cross-sectional area or diameter of the protrusion decreases as it moves away from the body part. Claim 6 A susceptor assembly according to claim 1, further comprising a gas passage that penetrates the protrusion or the body portion and is connected to the surface of the body portion. Claim 7 A susceptor assembly according to claim 6, characterized in that the gas passage comprises a main gas passage penetrating the protrusion or the body portion, and a plurality of sub-gas passages branching from the main gas passage and connected to the surface of the body portion. Claim 8 A susceptor assembly according to claim 7, characterized in that the diameter of the gas passage is 5 mm or less. Claim 9 delete Claim 10 A susceptor assembly according to claim 1, wherein the first heater portion is configured in a shape that is bent and wound from the lower part of the body portion toward the central part, and the second heater portion is arranged to wrap the protrusion multiple times along the vertical direction of the protrusion. Claim 11 A susceptor assembly according to claim 1, characterized in that the cross-section of the first heater part corresponds to a rectangle with a long horizontal direction, and the cross-section of the second heater part corresponds to a square or a rectangle with a long horizontal direction. Claim 12 A susceptor assembly according to claim 1, characterized in that the second gap between the protrusion and the second heater part is 1.0 to 1.5 times the first gap between the first heater part and the body part. Claim 13 A susceptor assembly according to claim 1, characterized in that the first gap between the first heater part and the body part is 5 mm to 20 mm. Claim 14 A susceptor assembly according to claim 1, characterized in that the cross-sectional area of ​​the first heater part and the second heater part is 60 mm² to 250 mm². Claim 15 A susceptor assembly according to claim 1, characterized in that the coils forming the first heater part have non-uniform spacing. Claim 16 A susceptor assembly according to claim 15, characterized in that the spacing of the coils forming the first heater part is 3 mm to 30 mm. Claim 17 A susceptor assembly according to claim 1, characterized in that the first heater part and the second heater part are integrally formed. Claim 18 A susceptor assembly according to claim 1, characterized in that the gap between the second heater part and the protrusion part is not constant. Claim 19 A chemical vapor deposition apparatus comprising: a chamber; an inner chamber provided on the inner side of the chamber; a susceptor assembly provided on the inner side of the inner chamber, on which a substrate is placed and which heats the substrate; and an upper plate provided on the inner side of the inner chamber and on which the substrate is placed, which provides a processing space between the susceptor assembly and the susceptor assembly for processing the substrate, wherein the susceptor assembly comprises a body portion on which the substrate or a satellite on which the substrate is placed is placed and which extends along the direction of flow of process gas, a susceptor having a protrusion protruding downward from the body portion, and a heater for heating the susceptor, wherein the protrusion protrudes locally downward from the central portion of the body portion, and the diameter or cross-sectional area of ​​the protrusion is smaller than the diameter or cross-sectional area of ​​the substrate and the satellite, and the heater is composed of an induction heating coil and comprises a first heater portion disposed on the lower side of the body portion and a second heater portion disposed to surround the protrusion. Claim 20 delete Claim 21 A chemical vapor deposition apparatus according to claim 19, characterized in that the cross-section of the first heater part corresponds to a rectangle with a long horizontal direction, and the cross-section of the second heater part corresponds to a square or a rectangle with a long horizontal direction. Claim 22 A chemical vapor deposition apparatus according to claim 19, characterized in that the second gap between the protrusion and the second heater part is 1.0 to 1.5 times the first gap between the first heater part and the body part. Claim 23 A chemical vapor deposition apparatus according to claim 19, characterized in that the body portion is fixed to the chamber or the inner chamber, and the lower portion of the protrusion is spaced apart from the chamber or the inner chamber.

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