Composite material for preventing electrostatic discharge of semiconductor wafers and method for manufacturing the same

Abstract

The present invention provides a composite material for antistatic purposes for semiconductor wafers comprising a polymer resin containing a conductive material, wherein the polymer resin comprises polymethyl methacrylate, polyurethane, or a combination thereof, and the conductive material comprises carbon nanotubes, and a method for manufacturing the same.

Description

Technology Field

[0001] The present invention relates to a composite material for antistatic purposes on semiconductor wafers and a method for manufacturing the same. The present invention is the result of a research project, and specific information is as shown in Table 4 below.

[0002] Assignment Number GRRC Kyunghee 2023-B03 Buddha name gyeonggi-do Project Management (Specialized) Agency Name Gyeonggi Provincial Government Research Project Name Gyeonggi Regional Cooperation Research Center (GRRC) Research Project Title Development of advanced materials for sub-nm and sub-ultrafine processes for realizing next-generation semiconductors Contribution rate 1 / 1 Project implementing organization name Kyung Hee University Industry-Academic Cooperation Foundation Research period 2023-07-01 ~ 2024-06-30 Background Technology

[0004] Polymer resins exhibit unique mechanical, electrical, and thermal properties depending on their underlying monomer precursors and chemical structures. While the properties of pure polymer resins are limited to a specific range, it is possible to improve various characteristics by adding reinforcements. A polymer resin composite is a material in which solid reinforcements, or fillers, are dispersed within a polymer resin matrix.

[0005] Nylon is an example of a polymer resin, and in particular, Monomer Cast Nylon (MC nylon) (hereinafter abbreviated as 'MC nylon') is a type of engineering plastic and is a crystalline polymer manufactured by using a chemical component as a catalyst in caprolactam. MC nylon has a molecular weight about 10 times greater and a degree of crystallinity about 2 times greater than that of conventional nylon-6, and is gaining attention as a material that can be utilized in various industrial fields based on its excellent mechanical strength resulting from this.

[0006] However, MC nylon, which is electrically insulating, lacks electrostatic discharge (ESD) capabilities. For this reason, MC nylon has limitations in that it cannot be used as a transport or storage device in the manufacturing process of precision electronic products, such as semiconductor wafers—which can suffer fatal damage from even minute spikes caused by static electricity, like PCBs and LCDs. Therefore, efforts are being made to impart electrical conductivity to MC nylon at least at the semiconductor level.

[0007] One method to impart a certain electrical conductivity to MC nylon is to add carbon-based materials such as carbon black or graphite when melt-casting monomers such as caprolactam. However, MC nylon manufactured by adding carbon black or graphite generally has somewhat reduced mechanical strength.

[0008] In the case of carbon black, it has a large specific surface area, so it does not disperse well and adsorbs a large amount of raw monomer, existing in a paste-like form and hindering polymerization. As a result, the manufactured MC nylon has significantly degraded physical properties, and there is a problem that its electrical conductivity does not reach the desired level, that is, the semiconductor level.

[0009] Although graphite disperses relatively well compared to carbon black, it still tends to settle within molten monomers or molten polymer resins and does not disperse easily. Additionally, a large amount of graphite (more than 5% by weight of the total weight of MC nylon) must be used to impart the desired level of electrical conductivity to MC nylon, which can lead to a decrease in the mechanical strength of MC nylon, particularly a decrease in wear resistance.

[0010] Therefore, to resolve these issues, the use of carbon nanotubes is attracting attention, as they possess not only significantly superior electrical and thermal conductivity but also excellent mechanical strength compared to the two carbon-based materials described earlier.

[0011] These carbon nanotubes can impart specific electrical conductivity to MC nylon while significantly improving its mechanical strength, particularly its wear resistance. Since the wear resistance of MC nylon is generally not superior to that of other engineering polymers, composites with carbon nanotubes are expected to greatly expand the industrial application range of MC nylon.

[0012] However, carbon nanotubes are fibrous materials that easily entangle and aggregate on their own, and consequently, no matter how much they are ground, mixed, or stirred in molten monomers or molten polymer resins containing carbon nanotubes, the desired level of dispersion is not achieved.

[0013] If polymerization is performed under these conditions, it is highly likely that polymerization will not easily occur in the regions where carbon nanotubes are concentrated.

[0014] Even after polymerization is completed, if carbon nanotubes are not sufficiently dispersed, the effect of improving mechanical strength may be minimal or non-existent, and in some cases, mechanical strength may decrease in areas where carbon nanotubes are unevenly distributed. Furthermore, electrical conductivity may appear only in parts of the MC nylon, or it may be impossible to achieve the desired electrical conductivity across the entire product.

[0015] In another aspect, uneven carbon nanotubes can cause secondary problems by blooming during operation in environments such as cleanrooms, thereby contaminating the cleanroom workplace.

[0016] Consequently, there is a rapidly increasing need for engineering materials that can replace composite materials composed of MC nylon and carbon nanotubes, and which possess not only semiconductor-level electrical conductivity but also excellent heat resistance, making them suitable for the transportation and storage of precision electronic products, specifically semiconductor wafers. The problem to be solved

[0018] One embodiment provides a composite material for semiconductor wafer antistatic applications that is highly suitable for semiconductor wafer antistatic applications, as it has excellent electrical conductivity due to low surface resistance and also excellent heat resistance.

[0019] Another embodiment provides a method for manufacturing a composite material for preventing static electricity in semiconductor wafers.

[0020] Another embodiment provides a composite material for antistatic purposes on semiconductor wafers manufactured by the above-described manufacturing method. means of solving the problem

[0022] According to one embodiment, a composite material for antistatic protection of a semiconductor wafer is provided, comprising a polymer resin containing a conductive material, wherein the polymer resin comprises polymethyl methacrylate, polyurethane, or a combination thereof, and the conductive material comprises carbon nanotubes.

[0023] The above-mentioned conductive material-containing polymer resin may be a homogeneous polymer resin having an interpenetrating polymer network structure.

[0024] The above-mentioned polymer resin containing the conductive material may be a polymer of a polymer resin precursor and carbon nanotubes.

[0025] The carbon nanotubes may be included in an amount of 1 to 2 parts by weight per 100 parts by weight of the polymer resin precursor.

[0026] The carbon nanotubes may be included in an amount of 1.2 to 2 parts by weight per 100 parts by weight of the polymer resin precursor.

[0027] The above polymer resin precursor may include methyl methacrylate, polyethylene glycol, or a combination thereof.

[0028] The above polymethyl methacrylate may have a weight-average molecular weight of 200,000 g / mol to 300,000 g / mol and a number-average molecular weight of 50,000 g / mol to 150,000 g / mol.

[0029] The above polyurethane may have a weight-average molecular weight of 2,000 g / mol to 8,000 g / mol and a number-average molecular weight of 1,000 g / mol to 7,000 g / mol.

[0030] The above-mentioned composite material for semiconductor wafer antistatic protection is 9.7 x 10 3 It can have a surface resistance of ohm / sq or less.

[0031] According to another embodiment, a method for manufacturing a composite material for antistatic purposes on a semiconductor wafer is provided, comprising the steps of: stirring a polymer resin precursor and a carbon nanotube; and adding an initiator and stirring further, wherein the polymer resin precursor comprises methyl methacrylate, polyethylene glycol, or a combination thereof.

[0032] The polymer resin precursor is methyl methacrylate, and the initiator may include azobisisobutyronitrile. At this time, the step of adding the initiator and further stirring may be carried out at a temperature of 70°C to 90°C.

[0033] The polymer resin precursor is polyethylene glycol, and the initiator may include toluene diisocyanate. At this time, the step of adding the initiator and additionally stirring may be carried out at a temperature of 95°C or higher.

[0034] According to another embodiment, a composite material for preventing static electricity in semiconductor wafers is provided by the manufacturing method according to the above. Effects of the invention

[0036] A composite material according to one embodiment has electrical conductivity and excellent mechanical strength and heat resistance, making it highly suitable for use as a tray for holding semiconductor wafers when transferring or storing them. Brief explanation of the drawing

[0038] Figure 1 is GPC data of polymethyl methacrylate used in Example 1-1. Figure 2 is GPC data of the polyurethane used in Example 2-1. Figure 3 shows the TGA data of the polymethyl methacrylate of Comparative Example 1 and the composite materials according to Examples 1-1 and 1-6. Figures 4 to 6 are DSC data of the polymethyl methacrylate of Comparative Example 1, the composite material according to Example 1-1, and the composite material according to Example 1-6, respectively. Figure 7 shows the TGA data of the polyurethane of Comparative Example 2 and the composite materials according to Examples 2-1 and 2-6. Figures 8 to 10 are DSC data of the polyurethane of Comparative Example 2, the composite material according to Example 2-1, and the composite material according to Example 2-6, respectively. Figure 11 is an FE-SEM image of polymethyl methacrylate of Comparative Example 1. Figure 12 is an FE-SEM image of the composite material according to Examples 1-6. Figure 13 is an FE-SEM image of the polyurethane of Comparative Example 2. Figure 14 is an FE-SEM image of the composite material according to Example 2-6. Specific details for implementing the invention

[0039] Hereinafter, embodiments of the present invention will be described in detail. However, these are presented as examples and are not intended to limit the present invention, and the present invention is defined only by the scope of the claims set forth below.

[0040] In this specification, "substitution" means that, unless otherwise defined, at least one hydrogen of a substituent or compound is substituted with deuterium, NH2, a C1 to C4 amine group, a nitro group, a C1 to C4 silyl group, a C1 to C4 alkyl group, a C1 to C4 alkylsilyl group, a C1 to C4 alkoxy group, a fluoro group, a C1 to C4 trifluoroalkyl group, or a cyano group.

[0041] Unless otherwise defined below, "hetero" means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si and P.

[0042] Unless otherwise defined below, "aryl group" is a collective concept for a group having one or more hydrocarbon aromatic moietys, including a form in which all elements of the hydrocarbon aromatic moiety have p-orbitals and these p-orbitals form a conjugation, such as a phenyl group, a naphthyl group, etc., and a form in which two or more hydrocarbon aromatic moietys are connected through sigma bonds, such as a biphenyl group, a terphenyl group, a quarterphenyl group, etc., and a non-aromatic fused ring in which two or more hydrocarbon aromatic moietys are directly or indirectly fused, such as a fluorenyl group, etc. The aryl group may include monocyclic, polycyclic, or fused polycyclic (i.e., a ring sharing adjacent pairs of carbon atoms) functional groups.

[0043] Unless otherwise defined below, "heteroaryl group" means containing at least one heteroatom selected from the group consisting of N, O, S, Se, Te, P, and Si instead of carbon (C) within the ring. When the heteroaryl group is a fused ring, at least one of the rings forming the heteroaryl group may have a heteroatom, and each ring may have a heteroatom.

[0044] Unless otherwise defined, "*" indicates a part connected to the same or different atoms or chemical formulas below.

[0045] Throughout this specification, terms such as “one embodiment,” “an embodiment,” “an exemplary embodiment,” etc., mean that specific elements described in relation to an embodiment are included in at least one embodiment described herein and may or may not be present in other embodiments. Furthermore, it should be understood that the described elements may be combined in any appropriate manner in various embodiments.

[0046] Unless otherwise defined, technical and scientific terms used herein have the same meaning as generally understood by those skilled in the art to which this application pertains. All cited patents, patent applications, and other references are incorporated herein by reference in their entirety. However, in the event that terms in this specification contradict or conflict with terms in the incorporated reference, terms from this specification shall prevail over conflicting terms in the incorporated reference. Although specific embodiments and embodiments have been described, alternatives, modifications, variations, improvements, and substantial equivalents that are not currently anticipated or cannot be anticipated may arise to the applicant or those skilled in the art. Accordingly, the appended claims and subject to amendment are intended to include all such alternatives, variations, improvements, and substantial equivalents.

[0047] A composite material for preventing static electricity in semiconductor wafers according to one embodiment is described below.

[0048] A composite material for antistatic purposes on a semiconductor wafer according to one embodiment comprises a polymer resin containing a conductive material, wherein the polymer resin comprises polymethyl methacrylate, polyurethane, or a combination thereof, and the conductive material comprises carbon nanotubes.

[0049] Semiconductor wafers must be stored or transported using a conductive medium. This is because if semiconductor wafers are stored or transported in a non-conductive state, static electricity can be generated, causing shocks between the wafers and potentially damaging them.

[0050] Accordingly, the inventors of the present invention conducted extensive research to develop a polymer composite material for semiconductor antistatic applications by utilizing carbon nanotubes with low surface resistance and excellent electrical conductivity, and finally succeeded in completing the present invention.

[0051] In particular, the inventors gave considerable thought to how to react carbon nanotubes, which are conductive materials, with polymer resins to produce composite materials. As a result, they confirmed that when carbon nanotubes are mixed into the polymer resin after it has been manufactured, a heterogeneous composite material is produced. Conversely, when carbon nanotubes are introduced together during the polymerization stage to manufacture the polymer resin and forced polymerization is carried out, a homogeneous composite material having an interpenetrating polymer network structure is produced. (Looking at Figures 11 to 14, it can be seen that polymethyl methacrylate or polyurethane does not have an interpenetrating polymer network structure, but when carbon nanotubes are mixed, they do have an interpenetrating polymer network structure.) That is, it was confirmed that carbon nanotubes are mixed with polymer resin precursor monomers in a homogeneous state to become conductive, and at this time, the surface resistance value becomes very low, thereby enabling the realization of an excellent antistatic effect. In addition, it was confirmed that when carbon nanotubes are mixed with a polymer resin precursor monomer in the above homogeneous state to form a polymer, using methyl methacrylate and / or polyethylene glycol as the monomer, rather than the conventionally used caprolactam, is very advantageous for lowering the surface resistance value.

[0052] For example, the carbon nanotubes may be included in an amount of 1 to 2 parts by weight, for example, 1.2 to 2 parts by weight, per 100 parts by weight of the polymer resin precursor. When the weight of the carbon nanotubes is controlled as described above, the composite material can have low surface resistance while simultaneously possessing excellent heat resistance. In particular, when the carbon nanotubes are included in an amount of 1.2 parts by weight per 100 parts by weight of the polymer resin precursor, the surface resistance value decreases sharply compared to the surface resistance value when the carbon nanotubes are included in an amount of less than 1.2 parts by weight. On the other hand, if the carbon nanotubes are included in an amount exceeding 2 parts by weight per 100 parts by weight of the polymer resin precursor, the surface resistance of the composite material decreases further, but a decrease in heat resistance occurs, making it unsuitable for use as an antistatic agent for semiconductor wafers.

[0053] For example, polymethyl methacrylate prepared by polymerizing the carbon nanotube using methyl methacrylate as the polymer resin precursor monomer may have a weight-average molecular weight of 200,000 g / mol to 300,000 g / mol and a number-average molecular weight of 50,000 g / mol to 150,000 g / mol.

[0054] For example, a polyurethane prepared by polymerizing the carbon nanotube using polyethylene glycol as the polymer resin precursor monomer may have a weight-average molecular weight of 2,000 g / mol to 8,000 g / mol and a number-average molecular weight of 1,000 g / mol to 7,000 g / mol.

[0055] When the weight-average molecular weight and number-average molecular weight of the polymethyl methacrylate and polyurethane containing the above conductive material (carbon nanotube) are as described above, it may be more advantageous to lower the surface resistance value of the composite material.

[0056] For example, the carbon nanotubes mentioned above may be single-walled carbon nanotubes or multi-walled carbon nanotubes, but using multi-walled carbon nanotubes may be advantageous in terms of cost-effectiveness.

[0057] For example, a composite material for antistatic purposes on a semiconductor wafer according to one embodiment is 9.7 x 10 3 It can have a surface resistance of ohm / sq (Ω / □) or less. This is because the surface resistance of trays currently used for transporting semiconductor wafers is approximately 10 5 Considering that it is less than ohm / sq, it is a very low value. Therefore, the composite material for antistatic purposes on semiconductor wafers according to one embodiment has a stable surface resistance even when transporting or storing semiconductor wafers for a long time, so it can prevent even minute damage to the semiconductor wafer.

[0058] A method for manufacturing a composite material for antistatic purposes on a semiconductor wafer according to another embodiment comprises the steps of: stirring a molecular resin precursor and carbon nanotubes; and adding an initiator and stirring further. At this time, the polymer resin precursor may include methyl methacrylate, polyethylene glycol, or a combination thereof.

[0059] As described above, the carbon nanotubes may be included in an amount of 1 to 2 parts by weight, for example 1.2 to 2 parts by weight, per 100 parts by weight of the polymer resin precursor.

[0060] Meanwhile, when the polymer resin precursor is methyl methacrylate, the initiator may include azobisisobutyronitrile. In this case, the weight-average molecular weight and number-average molecular weight of the final polymer, polymethyl methacrylate, may be easily controlled to 200,000 g / mol to 300,000 g / mol and 50,000 g / mol to 150,000 g / mol, respectively.

[0061] In addition, when the polymer resin precursor is methyl methacrylate and the initiator includes azobisisobutyronitrile, the step of adding the azobisisobutyronitrile initiator and further stirring can be carried out at a temperature of 70°C to 90°C. If the additional stirring temperature is below 70°C, the temperature is too low and the polymerization reaction may not proceed smoothly, and if the additional stirring temperature is above 90°C, the temperature is too high and it may be difficult to manufacture a homogeneous structure having an interpenetrating polymer network structure.

[0062] Meanwhile, when the polymer resin precursor is polyethylene glycol, the initiator may include toluene diisocyanate. In this case, the weight-average molecular weight and number-average molecular weight of the final polymer, polyurethane, may be easily controlled to 2,000 g / mol to 8,000 g / mol and 1,000 g / mol to 7,000 g / mol, respectively.

[0063] In addition, when the polymer resin precursor is polyethylene glycol and the initiator includes toluene diisocyanate, the step of adding the toluene diisocyanate initiator and further stirring can be carried out at a temperature of 95°C or higher, for example, between 95°C and 120°C. If the additional stirring temperature is below 95°C, the temperature is too low and the polymerization reaction may not proceed smoothly, and if the additional stirring temperature exceeds 120°C, the temperature is too high and it may be difficult to manufacture a homogeneous structure having an interpenetrating polymer network structure.

[0064] Another embodiment provides a semiconductor wafer antistatic composite material manufactured by the above-described method for manufacturing a semiconductor wafer antistatic composite material.

[0066] Specific embodiments of the present invention are presented below. However, the embodiments described below are merely for the purpose of specifically illustrating or explaining the present invention and should not be limited thereby.

[0068] Comparative Example 1: Synthesis of Polymethyl Methacrylate

[0069] 10 g of liquid methyl methacrylate (MMA) and 5 mg of Azobisisobutyronitrile (AIBN) were placed in a 20 mL vial and stirred at 80°C at a speed of 500 rpm for 5 hours. After stirring for 5 hours, the prepared mixture was cooled to room temperature and removed from the vial to obtain polymethyl methacrylate (PMMA).

[0071] Example 1-1: Synthesis of composite materials

[0072] Liquid methyl methacrylate (MMA) and solid multiwall carbon nanotubes (MCNT) were placed in a 20 mL vial and stirred at 500 rpm for 10 minutes at room temperature. Subsequently, 4.9 to 5.0 mg of Azobisisobutyronitrile (AIBN) was added to the vial, the temperature was raised to 80°C, and the mixture was stirred at the same speed for 5 hours. After 5 hours of stirring, the prepared mixture was cooled to room temperature (20°C) and removed from the vial to obtain PMMA containing MCNT (weight-average molecular weight of 235,290 g / mol and number-average molecular weight of 103,450 g / mol) (see Fig. 1). At this time, the total weight of the liquid methyl methacrylate (MMA) and the solid multiwall carbon nanotube (MCNT) is 10g, and the weight of the solid multiwall carbon nanotube (MCNT) is controlled to be 1.0 part by weight relative to 100 parts by weight of the liquid methyl methacrylate (MMA).

[0074] Example 1-2: Synthesis of Composite Materials

[0075] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.2 parts by weight per 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 204,210 g / mol and number-average molecular weight of 100,020 g / mol)

[0077] Examples 1-3: Synthesis of composite materials

[0078] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.4 parts by weight per 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 240,100 g / mol and number-average molecular weight of 113,420 g / mol)

[0080] Examples 1-4: Synthesis of composite materials

[0081] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.6 parts by weight per 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 225,220 g / mol and number-average molecular weight of 103,050 g / mol)

[0083] Examples 1-5: Synthesis of composite materials

[0084] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.8 parts by weight per 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 230,790 g / mol and number-average molecular weight of 101,990 g / mol)

[0086] Examples 1-6: Synthesis of composite materials

[0087] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 2.0 parts by weight relative to 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 231,370 g / mol and number-average molecular weight of 110,360 g / mol)

[0089] Examples 1-7: Synthesis of composite materials

[0090] The procedure was carried out in the same manner as in Example 1-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 2.2 parts by weight relative to 100 parts by weight of the liquid-state methyl methacrylate (MMA). (Weight-average molecular weight of 265,240 g / mol and number-average molecular weight of 158,230 g / mol)

[0092] Examples 1-8: Synthesis of composite materials

[0093] The procedure was identical to Example 1-1, except that toluene diisocyanate (TDI) was used instead of azobisisobutyronitrile (AIBN) as the initiator. (Weight-average molecular weight of 197,930 g / mol and number-average molecular weight of 49,840 g / mol)

[0095] Examples 1-9: Synthesis of composite materials

[0096] The procedure was the same as in Example 1-1, except that Azobisisobutyronitrile (AIBN) was added to the vial and the temperature was raised to 100°C instead of 80°C and stirred. (Weight-average molecular weight of 291,110 g / mol and number-average molecular weight of 144,120 g / mol)

[0098] Comparative Example 2: Synthesis of Polyurethane

[0099] 10 g of liquid polyethylene glycol (Polyethylene glycol 400; PEG 400) and 4.35 g of toluene diisocyanate (TDI) were placed in a 20 mL vial and stirred at 100°C at a speed of 500 rpm for 8 hours. After stirring for 8 hours, the prepared mixture was cooled to room temperature and removed from the vial to obtain polyurethane.

[0101] Example 2-1: Synthesis of composite materials

[0102] Liquid Polyethylene Glycol 400 (PEG 400) and solid Multiwall Carbon Nanotube (MCNT) were placed in a 20 mL vial and stirred at 500 rpm for 10 minutes at room temperature. Subsequently, 4.267 to 4.310 g of Toluene Diisocyanate (TDI) were added to the vial, the temperature was raised to 100°C, and the mixture was stirred at the same speed for 8 hours. After 8 hours of stirring, the prepared mixture was cooled to room temperature (20°C) and removed from the vial to obtain polyurethane containing MCNT (weight-average molecular weight of 5,690 g / mol and number-average molecular weight of 4,207.5 g / mol) (see Fig. 2). At this time, the total weight of the liquid polyethylene glycol (PEG 400) and the solid multiwall carbon nanotube (MCNT) is 10g, and the weight of the solid multiwall carbon nanotube (MCNT) is controlled to be 1.0 part by weight relative to 100 parts by weight of the liquid polyethylene glycol (PEG 400).

[0104] Example 2-2: Synthesis of Composite Materials

[0105] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.2 parts by weight relative to 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 6,100 g / mol and number-average molecular weight of 4,501 g / mol)

[0107] Example 2-3: Synthesis of Composite Materials

[0108] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.4 parts by weight per 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 5,130 g / mol and number-average molecular weight of 4,340 g / mol)

[0110] Example 2-4: Synthesis of composite materials

[0111] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.6 parts by weight relative to 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 6,600 g / mol and number-average molecular weight of 4,920 g / mol)

[0113] Examples 2-5: Synthesis of composite materials

[0114] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 1.8 parts by weight relative to 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 6,030 g / mol and number-average molecular weight of 4,510 g / mol)

[0116] Example 2-6 Synthesis of composite materials

[0117] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 2.0 parts by weight relative to 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 5,300 g / mol and number-average molecular weight of 4,001 g / mol)

[0119] Example 2-7 Synthesis of Composite Material

[0120] The procedure was carried out in the same manner as in Example 2-1, except that the weight of the solid-state multiwall carbon nanotube (MCNT) was controlled to be 2.2 parts by weight relative to 100 parts by weight of the liquid-state polyethylene glycol (PEG 400). (Weight-average molecular weight of 6,870 g / mol and number-average molecular weight of 5,630 g / mol)

[0122] Examples 2-8: Synthesis of composite materials

[0123] The procedure was identical to Example 2-1, except that Azobisisobutyronitrile (AIBN) was used instead of Toluene diisocyanate (TDI) as the initiator. (Weight-average molecular weight of 9,130 ​​g / mol and number-average molecular weight of 7,280 g / mol)

[0125] Example 2-9: Synthesis of composite materials

[0126] The procedure was the same as in Example 2-1, except that toluene diisocyanate (TDI) was added to the vial and the temperature was raised to 80°C instead of 100°C and stirred. (Weight-average molecular weight of 1,950 g / mol and number-average molecular weight of 6,830 g / mol)

[0128] Comparative Example 3: Synthesis of composite materials

[0129] The procedure was carried out in the same manner as Example 1-1, except that caprolactam was used instead of methyl methacrylate (MMA).

[0131] Evaluation 1: Surface resistance

[0132] The surface resistance of the carbon nanotube itself, the examples, and the comparative examples was measured using a measuring instrument (TREK 152-1), and the results are shown in Table 1 below.

[0134] (Unit: ohm / sq) surface resistance surface resistance MCNT 8.25 x 10 2 Comparative Example 2 > 10 13 Comparative Example 1 > 10 13 Comparative Example 3 5.1 x 10 5 Example 1-1 9.7 x 10 3 Example 2-1 6.3 x 10 3 Examples 1-2 7.8 x 10 3 Example 2-2 4.5 x 10 3 Examples 1-3 7.2 x 10 3 Examples 2-3 4.0 x 10 3 Examples 1-4 5.5 x 10 3 Examples 2-4 2.3 x 10 3 Examples 1-5 3.2 x 10 3 Examples 2-5 0.1 x 10 3 Examples 1-6 2.2 x 10 3 Examples 2-6 6.3 x 10 3 Examples 1-7 2.1 x 10 3 Examples 2-7 0.1 x 10 3 Examples 1-8 10.6 x 10 3 Examples 2-8 7.2 x 10 3 Examples 1-9 10.8 x 10 3 Examples 2-9 7.3 x 10 3

[0135] Evaluation 2: Heat resistance

[0136] To measure the heat resistance of each of the examples and comparative examples, TGA and DSC were measured, and the results are shown in Table 2 and Figures 3 to 10 below.

[0138] (Unit: ℃) TGA TGA Comparative Example 2 288 Comparative Example 1 197 Comparative Example 3 166 Example 1-1 224 Example 2-1 289 Examples 1-2 224 Example 2-2 290 Examples 1-3 225 Examples 2-3 293 Examples 1-4 225 Examples 2-4 293 Examples 1-5 226 Examples 2-5 295 Examples 1-6 226 Examples 2-6 297 Examples 1-7 209 Examples 2-7 283 Examples 1-8 220 Examples 2-8 288 Examples 1-9 220 Examples 2-9 288

[0139] Evaluation 3: Mechanical Strength

[0140] To measure the mechanical strength of each of the examples and comparative examples, the impact strength of each material was measured according to ASTM D256, and the results are shown in Table 3 below.

[0142] (Unit: Kg·cm / cm) Impact strength Impact strength Comparative Example 2 1.8 Comparative Example 1 2.0 Comparative Example 3 1.5 Example 1-1 5.9 Example 2-1 5.5 Examples 1-2 6.0 Example 2-2 5.6 Examples 1-3 6.2 Examples 2-3 5.8 Examples 1-4 6.2 Examples 2-4 5.8 Examples 1-5 6.4 Examples 2-5 5.9 Examples 1-6 6.5 Examples 2-6 5.9 Examples 1-7 3.9 Examples 2-7 3.8 Examples 1-8 3.8 Examples 2-8 3.8 Examples 1-9 4.3 Examples 2-9 3.9

[0143] From Tables 1 to 3 and Figures 3 to 10 above, it can be seen that the composite material according to one embodiment is highly suitable for use as a composite material for antistatic purposes on semiconductor wafers because it has excellent electrical conductivity, mechanical strength, and heat resistance.

[0145] The present invention is not limited to the above embodiments and can be manufactured in various different forms, and those skilled in the art will understand that the invention can be implemented in other specific forms without changing the technical concept or essential features of the invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

Claim 1 The polymer resin containing a conductive material comprises polymethyl methacrylate, polyurethane, or a combination thereof, and the conductive material comprises carbon nanotubes, wherein the polymer resin containing the conductive material is a polymer of a polymer resin precursor comprising methyl methacrylate, polyethylene glycol, or a combination thereof and carbon nanotubes, and is a homogeneous polymer resin having an interpenetrating polymer network structure, wherein the carbon nanotubes are included in an amount of 1.2 to 2 parts by weight per 100 parts by weight of the polymer resin precursor, wherein the polymethyl methacrylate has a weight-average molecular weight of 200,000 g / mol to 300,000 g / mol and a number-average molecular weight of 50,000 g / mol to 150,000 g / mol, and the polyurethane has a weight-average molecular weight of 2,000 g / mol to 8,000 g / mol. Having, having a number average molecular weight of 1,000 g / mol to 7,000 g / mol, and 9.7 x 10 3 A composite material for antistatic purposes on semiconductor wafers having a surface resistance of ohm / sq or less. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 A step of stirring a polymer resin precursor comprising methyl methacrylate, polyethylene glycol, or a combination thereof, and carbon nanotubes; and a step of forming a homogeneous composite material having an interpenetrating polymer network structure by adding an initiator and further stirring to polymerize; A method for manufacturing a composite material for antistatic purposes on a semiconductor wafer, comprising: a polymer resin precursor; wherein the carbon nanotube is included in an amount of 1.2 to 2 parts by weight per 100 parts by weight of the polymer resin precursor; wherein, when the polymer resin precursor is methyl methacrylate, the initiator comprises azobisisobutyronitrile and polymerizes at a temperature of 70°C to 90°C to form polymethyl methacrylate having a weight-average molecular weight of 200,000 g / mol to 300,000 g / mol; and wherein, when the polymer resin precursor is polyethylene glycol, the initiator comprises toluene diisocyanate and polymerizes at a temperature of 95°C or higher to form polyurethane having a weight-average molecular weight of 2,000 g / mol to 8,000 g / mol. Claim 11 delete Claim 12 delete Claim 13 delete Claim 14 delete Claim 15 delete Claim 16 delete Claim 17 A composite material for preventing static electricity in semiconductor wafers manufactured by the manufacturing method according to Paragraph 10.

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