Shutter mechanism and substrate processing apparatus

Abstract

A shutter mechanism and a substrate processing device are provided that can enlarge the opening while simultaneously pressurizing the valve body with uniform force. A shutter mechanism is a shutter mechanism for opening and closing an opening of a cylindrical chamber of a substrate processing device, and comprises a valve body and a lifting mechanism. The valve body has a length of more than half of the inner circumference of the chamber. The lifting mechanism is connected to the lower part of the valve body and is two or more lifting mechanisms for lifting the valve body.

Description

Technology Field

[0001] The present disclosure relates to a shutter mechanism and a substrate processing device. Background Technology

[0002] Conventionally, a plasma processing apparatus is known for performing a desired plasma treatment on a wafer, which is a substrate to be processed for a semiconductor device. The plasma processing apparatus is provided with, for example, a chamber for receiving a wafer, and within the chamber, a mounting stand that mounts the wafer and functions as a lower electrode, and an upper electrode facing the mounting stand are arranged. In addition, a high-frequency power source is connected to at least one of the mounting stand and the upper electrode, and the mounting stand and the upper electrode apply high-frequency power to the processing chamber space. In the plasma processing apparatus, the processing gas supplied to the processing chamber space is turned into plasma by high-frequency power to generate ions, etc., and the generated ions, etc. are guided to the wafer, and a desired plasma treatment, for example, an etching treatment, is performed on the wafer. Prior art literature

[0003] Japanese Patent Publication No. 2015-126197 The problem to be solved

[0004] The present disclosure provides a shutter mechanism and a substrate processing device capable of expanding the opening while simultaneously applying uniform force to the valve body. means of solving the problem

[0005] A shutter mechanism according to one aspect of the present invention is a shutter mechanism for opening and closing an opening of a cylindrical chamber of a substrate processing device, comprising a valve body and a lifting mechanism. The valve body has a length of at least half of the inner circumference of the chamber. The lifting mechanism is two or more lifting mechanisms connected to the lower part of the valve body and lifting the valve body. Effects of the invention

[0006] According to the present disclosure, the opening can be enlarged, and at the same time, the valve body can be pressurized with a uniform force. Brief explanation of the drawing

[0007] FIG. 1 is a drawing illustrating an example of a substrate processing apparatus in one embodiment disclosed in the present invention. FIG. 2 is a partial enlarged view illustrating an example of a cross-section of a shutter mechanism in the present embodiment. FIG. 3 is a drawing illustrating an example of the external appearance of a shutter mechanism in the present embodiment. FIG. 4 is a drawing illustrating an example of the external appearance of the chamber in the present embodiment. FIG. 5 is a drawing illustrating an example of the external appearance of the chamber in the present embodiment. FIG. 6 is a drawing illustrating an example of the external appearance of the chamber in the present embodiment. Specific details for implementing the invention

[0008] Hereinafter, embodiments of the disclosed shutter mechanism and substrate processing apparatus will be described in detail based on the drawings. Furthermore, the disclosed technology is not limited by the following embodiments.

[0009] In a plasma processing apparatus, an opening for the loading and unloading of semiconductor wafers is provided on the side wall of the chamber, and a gate valve is arranged to open and close the opening. The loading and unloading of semiconductor wafers is performed by opening and closing the gate valve. Inside the chamber, a deposit shield is provided along the inner wall of the chamber to prevent etching byproducts (deposit) from adhering, and an opening is also provided in the deposit shield to match the position of the opening in the chamber.

[0010] Since the gate valve is positioned on the outer side of the chamber (the return chamber side), an opening is formed in the side wall that opens toward the return chamber side. If plasma generated within the chamber diffuses into the space of the opening, the uniformity of the plasma deteriorates, or the sealing member of the gate valve deteriorates due to the plasma. Therefore, the openings of the chamber and the depot shield are configured to be blocked by a shutter. Furthermore, the shutter is driven to open and close, for example, by having the shutter's drive unit positioned below the opening.

[0011] However, recently, there has been a requirement to transport chamber parts and other items exceeding the outer diameter of the wafer from the chamber opening, necessitating an expansion of the opening and a larger size of the shutter valve body. Nevertheless, if the shutter valve body is enlarged, the contact area between the valve body and the pressurized depot shield increases, which may result in insufficient electrical conductivity between the valve body and the depot shield. Therefore, it is expected that the opening can be expanded while simultaneously pressurizing the valve body with uniform force.

[0012] [Configuration of the substrate processing device]

[0013] FIG. 1 is a drawing illustrating an example of a substrate processing apparatus according to one embodiment disclosed in the present invention. In addition, the following description describes a case where the substrate processing apparatus is a plasma processing apparatus, but it is not limited thereto and any substrate processing apparatus having a shutter member may be used.

[0014] In FIG. 1, the plasma processing device (1) is configured as a capacitively coupled parallel plate plasma etching device and is equipped with a cylindrical chamber (processing chamber) (10) made of aluminum, for example, with a surface anodized (anodic oxidation) surface. The chamber (10) is grounded for safety. However, it is not limited thereto, and the plasma processing device (1) is not limited to a capacitively coupled parallel plate plasma etching device, and any type of plasma processing device such as inductively coupled plasma (ICP), microwave plasma, magnetron plasma, etc., is acceptable.

[0015] At the bottom of the chamber (10), a cylindrical susceptor support (12) is disposed via an insulating plate (11) such as ceramic, and a conductive susceptor (13), made of, for example, aluminum, is disposed on the susceptor support (12). The susceptor (13) has a configuration that functions as a lower electrode and mounts a substrate, for example, a semiconductor wafer (W), on which etching treatment is performed.

[0016] An electrostatic chuck (ESC) (14) for holding a wafer (W) by electrostatic adsorption force is disposed on the upper surface of the susceptor (13). The electrostatic chuck (14) is composed of an electrode plate (15) made of a conductive film and a pair of insulating layers that clamp the electrode plate (15), such as dielectrics like Y2O3, Al2O3, AlN, etc., and a DC power source (16) is electrically connected to the electrode plate (15) through a connection terminal. The electrostatic chuck (14) adsorbs and holds the wafer (W) by a Coulomb force or a Johnson-Rahbek force caused by a DC voltage applied by the DC power source (16).

[0017] Additionally, in the portion of the upper surface of the electrostatic chuck (14) where the wafer (W) is adsorbed and held, a plurality of pusher pins (e.g., three) are arranged as lift pins capable of protruding from the upper surface of the electrostatic chuck (14). These pusher pins are connected to a motor (not shown) via a ball screw (not shown), and protrude freely from the upper surface of the electrostatic chuck (14) due to the rotational movement of the motor, which is converted into linear movement by the ball screw. As a result, the pusher pins penetrate the electrostatic chuck (14) and the susceptor (13) and move up and down within the inner space. When the electrostatic chuck (14) adsorbs and holds the wafer (W) when performing an etching process on the wafer (W), the pusher pins are received in the electrostatic chuck (14). When removing the wafer (W) that has undergone etching treatment from the plasma generation space (S), the pusher pin protrudes from the electrostatic chuck (14) to separate the wafer (W) from the electrostatic chuck (14) and lift it upward.

[0018] On the upper surface surrounding the susceptor (13), an edge ring (17) made of, for example, silicon (Si) is disposed to improve the uniformity of the etching, and a cover ring (54) that protects the side of the edge ring (17) is disposed around the edge ring (17). In addition, the sides of the susceptor (13) and the susceptor support (12) are covered with a cylindrical member (18) made of, for example, quartz (SiO2).

[0019] Inside the susceptor support (12), for example, a refrigerant chamber (19) extending in a circumferential direction is arranged. A refrigerant of a predetermined temperature, for example, cooling water, is circulated and supplied to the refrigerant chamber (19) from an external chiller unit (not shown) through pipes (20a, 20b). The refrigerant chamber (19) controls the processing temperature of the wafer (W) on the susceptor (13) by the temperature of the refrigerant.

[0020] In addition, by supplying a heating gas, such as helium (He) gas, from a heating gas supply mechanism (not shown) through a gas supply line (21) between the upper surface of the electrostatic chuck (14) and the back surface of the wafer (W), the heat transfer between the wafer (W) and the susceptor (13) is efficiently and uniformly controlled.

[0021] Above the susceptor (13), an upper electrode (22) is positioned parallel to and opposite to the susceptor (13). Here, the space formed between the susceptor (13) and the upper electrode (22) functions as a plasma generation space (S) (a space within a processing chamber). The upper electrode (22) consists of an outer upper electrode (23) in the shape of an annular or donut that is positioned opposite the susceptor (13) at a predetermined distance, and an inner upper electrode (24) in the shape of a disc that is positioned radially inward from the outer upper electrode (23) and insulated from the outer upper electrode (23). Furthermore, regarding plasma generation, the outer upper electrode (23) acts as the main electrode and the inner upper electrode (24) acts as the auxiliary electrode.

[0022] Between the outer upper electrode (23) and the inner upper electrode (24), an annular gap (gap) of, for example, 0.25 mm to 2.0 mm is formed, and a dielectric (25), for example made of quartz, is disposed in the gap. Alternatively, a ceramic body may be disposed in the gap instead of the dielectric (25) made of quartz. A capacitor is formed by the outer upper electrode (23) and the inner upper electrode (24) having the dielectric (25) between them. The capacitance (C1) of the capacitor is selected or adjusted to a desired value according to the size of the gap and the dielectric constant of the dielectric (25). Additionally, an annular insulating shielding member (26), for example made of alumina (Al2O3) or yttria (Y2O3), is hermetically disposed between the outer upper electrode (23) and the side wall of the chamber (10).

[0023] The outer upper electrode (23) is preferably composed of a low-resistance conductor or semiconductor, such as silicon, which has low Joule heat. An upper high-frequency power source (31) is electrically connected to the outer upper electrode (23) via an upper matching device (27), an upper feed rod (28), a connector (29), and a feed tube (30). The upper matching device (27) matches the load impedance to the internal (or output) impedance of the upper high-frequency power source (31) and functions to ensure that the output impedance of the upper high-frequency power source (31) and the load impedance are outwardly matched when plasma is generated within the chamber (10). Additionally, the output terminal of the upper matching device (27) is connected to the upper end of the upper feed rod (28).

[0024] The power supply tube (30) is made of a conductive plate, such as an aluminum plate or a copper plate, which is approximately cylindrical or conical in shape, and its lower end is connected in the main direction and is continuously connected to the outer upper electrode (23), and its upper end is electrically connected to the lower end of the upper power supply rod (28) via a connector (29). On the outside of the power supply tube (30), the side wall of the chamber (10) extends upward above the height position of the upper electrode (22) and forms a cylindrical ground conductor (10a). The upper end of the cylindrical ground conductor (10a) is electrically insulated from the upper power supply rod (28) by a tubular insulating member (69). In this configuration, in the load circuit from the connector (29), a coaxial line is formed in which the power supply tube (30) and the outer upper electrode (23) serve as waveguides by the power supply tube (30), the outer upper electrode (23), and the ground conductor (10a).

[0025] The inner upper electrode (24) has an upper electrode plate (32) and an electrode support (33). The upper electrode plate (32) is composed of a semiconductor material such as silicon or silicon carbide (SiC), for example, and has a plurality of electrode plate gas vent holes (first gas vent holes) not shown. The electrode support (33) is a conductive material that supports the upper electrode plate (32) in a detachable manner and is composed of, for example, aluminum with an anodized surface. The upper electrode plate (32) is fastened to the electrode support (33) by a bolt (not shown). The head portion of the bolt is protected by an annular shield ring (53) placed at the bottom of the upper electrode plate (32).

[0026] In the upper electrode plate (32), each electrode plate gas vent hole penetrates the upper electrode plate (32). Inside the electrode support (33), a buffer chamber is formed into which the processing gas described later is introduced. The buffer chamber consists of two buffer chambers, namely a central buffer chamber (35) and a peripheral buffer chamber (36), which are divided by an annular partition member (43) made of, for example, an O-ring, and the bottom is open. Below the electrode support (33), a cooling plate (hereinafter referred to as "C / P") (34) (intermediate member) that blocks the bottom of the buffer chamber is disposed. The C / P (34) is made of aluminum with an anodized surface and has a plurality of C / P gas vent holes (second gas vent holes) not shown. In the C / P (34), each C / P gas vent hole penetrates the C / P (34).

[0027] Additionally, a spacer (37) made of a semiconductor material such as silicon or silicon carbide is interposed between the upper electrode plate (32) and the C / P (34). The spacer (37) is a disc-shaped member and has a plurality of upper surface annular grooves formed concentrically with the disc on the surface facing the C / P (34) (hereinafter briefly referred to as the "upper surface"), and a plurality of spacer gas vent holes (third gas vent holes) that penetrate the spacer (37) and are also opened at the bottom portion of each upper surface annular groove.

[0028] The inner upper electrode (24) supplies the processing gas introduced into the buffer chamber from the processing gas supply source (38) described later to the plasma generation space (S) through the C / P gas ventilation hole of the C / P (34), the spacer gas flow path of the spacer (37), and the electrode plate gas ventilation hole of the upper electrode plate (32). Here, the central buffer chamber (35) and the plurality of C / P gas ventilation holes, spacer gas flow paths, and electrode plate gas ventilation holes located below it constitute the central shower head (processing gas supply path). Additionally, the peripheral buffer chamber (36) and the plurality of C / P gas ventilation holes, spacer gas flow paths, and electrode plate gas ventilation holes located below it constitute the peripheral shower head (processing gas supply path).

[0029] Additionally, as shown in FIG. 1, a processing gas supply source (38) is positioned outside the chamber (10). The processing gas supply source (38) supplies processing gas to the central buffer chamber (35) and the peripheral buffer chamber (36) at a desired flow rate ratio. Specifically, the gas supply pipe (39) from the processing gas supply source (38) branches into two branch pipes (39a, 39b) along the way and is connected to the central buffer chamber (35) and the peripheral buffer chamber (36), respectively. Each branch pipe (39a, 39b) has a flow control valve (40a, 40b) (flow control device). The conductance of the flow path from the processing gas supply source (38) to the central buffer chamber (35) and the peripheral buffer chamber (36) is set to be equal. For this reason, the flow rate ratio of the processing gas supplied to the central buffer room (35) and the peripheral buffer room (36) can be arbitrarily adjusted by adjusting the flow control valves (40a, 40b). In addition, a mass flow controller (MFC) (41) and an opening / closing valve (42) are installed in the gas supply pipe (39).

[0030] With the above configuration, the plasma processing device (1) arbitrarily adjusts the ratio (FC / FE) of the gas flow rate (FC) ejected from the central shower head and the gas flow rate (FE) ejected from the peripheral shower head by adjusting the flow rate ratio of the processing gas introduced into the central buffer room (35) and the peripheral buffer room (36). In addition, it is also possible to individually adjust the flow rate per unit area of ​​the processing gas ejected from the central shower head and the peripheral shower head, respectively. Furthermore, by arranging two processing gas supply sources corresponding to each of the branch pipes (39a, 39b), it is also possible to set the gas type or gas mixing ratio of the processing gas ejected from the central shower head and the peripheral shower head, respectively, independently or separately. However, it is not limited to this, and the plasma processing device (1) may not be able to adjust the ratio of the gas flow rate (FC) ejected from the central shower head and the gas flow rate (FE) ejected from the peripheral shower head.

[0031] Additionally, an upper high-frequency power source (31) is electrically connected to the electrode support (33) of the inner upper electrode (24) via an upper matching unit (27), an upper power supply rod (28), a connector (29), and an upper power supply tube (44). A variable capacitor (45) capable of variably adjusting the capacitance is disposed in the middle of the upper power supply tube (44). Furthermore, a refrigerant chamber or a cooling jacket (not shown) may be provided on the outer upper electrode (23) and the inner upper electrode (24) to control the temperature of the electrodes by a refrigerant supplied from an external chiller unit (not shown).

[0032] An exhaust port (46) is provided at the bottom of the chamber (10). An automatic pressure control valve (hereinafter referred to as "APC valve") (48), which is a variable butterfly valve, and a turbo molecular pump (hereinafter referred to as "TMP") (49) are connected to this exhaust port (46) via an exhaust manifold (47). The APC valve (48) and the TMP (49) work together to reduce the pressure of the plasma generation space (S) within the chamber (10) to a desired vacuum level. Additionally, between the exhaust port (46) and the plasma generation space (S), an annular baffle plate (50) having a plurality of ventilation holes is arranged to surround the susceptor (13), and the baffle plate (50) prevents leakage of plasma from the plasma generation space (S) to the exhaust port (46).

[0033] Additionally, an opening (51) for the loading and unloading of a wafer (W) is provided on the outer side wall of the chamber (10), and a gate valve (52) for opening and closing the opening (51) is arranged. Inside the chamber (10), a first depot shield (71) and a second depot shield (72) are detachably provided along the inner wall of the chamber (10). The first depot shield (71) is the upper member of the depot shield and is provided above the opening (51) of the chamber (10). The second depot shield (72) is the lower member of the depot shield and is provided below the baffle plate (50). The lower part of the first depot shield (71) closes the opening (51) by contacting the upper part of the valve body (81) of the shutter mechanism (80) described later. The first depot shield (71) and the second depot shield (72) can be constructed, for example, by coating an aluminum material with ceramics such as Y2O3. Additionally, the lower part of the first depot shield (71) is coated with a conductive material, for example stainless steel or nickel alloy, so as to be electrically connected to the valve body (81) that contacts it.

[0034] A wafer (W) is brought in and taken out by opening and closing the gate valve (52). However, since the gate valve (52) is positioned on the outside of the chamber (10) (transport side), a space is formed on the side wall where the opening (51) is opened to the transport side. Consequently, plasma generated inside the chamber (10) spreads into that space, causing deterioration in the uniformity of the plasma or deterioration of the sealing member of the gate valve (52). Therefore, by blocking the space between the first depot shield (71) and the second depot shield (72) by the valve body (81), the opening (51) of the chamber (10) and the plasma generation space (S) are blocked. Additionally, a lifting mechanism (82) that drives the valve body (81) is positioned, for example, below the second depot shield (72). The valve body (81) is driven up and down by a lifting mechanism (82) and opens and closes the opening (51) between the first depot shield (71) and the second depot shield (72). Additionally, the valve body (81) and the lifting mechanism (82) may be combined and referred to as a shutter mechanism (80).

[0035] In addition, in the plasma processing device (1), a lower high-frequency power supply (first high-frequency power supply) (59) is electrically connected to a susceptor (13) serving as a lower electrode via a lower matching device (58). The lower matching device (58) is intended to match the load impedance to the internal (or output) impedance of the lower high-frequency power supply (59), and functions to ensure that the internal impedance of the lower high-frequency power supply (59) and the load impedance match externally when plasma is being generated in the plasma generation space (S) within the chamber (10). Additionally, another second lower high-frequency power supply (second high-frequency power supply) may be connected to the lower electrode.

[0036] Additionally, in the plasma processing device (1), a low-pass filter (LPF) (61) is electrically connected to the inner upper electrode (24) so ​​that high-frequency power from the upper high-frequency power source (31) is not passed to ground, but high-frequency power from the lower high-frequency power source (59) is passed to ground. This LPF (61) is preferably composed of an LR filter or an LC filter. However, since it is possible to provide a sufficiently large reactance to the high-frequency power from the upper high-frequency power source (31) with even a single wire, it is acceptable to electrically connect only a single wire to the inner upper electrode (24) instead of an LR filter or an LC filter. Meanwhile, a high-pass filter (HPF) (62) is electrically connected to the susceptor (13) to allow high-frequency power from the upper high-frequency power source (31) to pass to ground.

[0037] Next, when performing etching in the plasma processing device (1), the gate valve (52) and the valve body (81) are opened first, and the wafer (W) to be processed is brought into the chamber (10) and mounted on the susceptor (13). Then, a mixed gas of a processing gas, for example, C4F8 gas and argon (Ar) gas, is introduced from the processing gas supply source (38) into the central buffer chamber (35) and the peripheral buffer chamber (36) at a predetermined flow rate and flow rate ratio. In addition, the pressure of the plasma generation space (S) inside the chamber (10) is set to a value suitable for etching, for example, within the range of several m Torr to 1 Torr, by means of the APC valve (48) and TMP (49).

[0038] In addition, high-frequency power for plasma generation is applied to the upper electrode (22) (outer upper electrode (23), inner upper electrode (24)) at a predetermined power by the upper high-frequency power source (31), and at the same time, high-frequency power for bias is applied to the lower electrode of the susceptor (13) at a predetermined power from the lower high-frequency power source (59). In addition, a DC voltage is applied to the electrode plate (15) of the electrostatic chuck (14) from the DC power source (16) to electrostatically adsorb the wafer (W) to the susceptor (13).

[0039] Then, plasma is generated in the plasma generation space (S) by the processing gas ejected from the shower head, and the surface to be processed of the wafer (W) is physically or chemically etched by the radicals or ions generated at this time.

[0040] In the plasma treatment device (1), by applying a high frequency in a high frequency range (a frequency range where ions cannot move) to the upper electrode (22), the plasma is densified into a desirable dissociation state. In addition, a high-density plasma can be formed even under lower pressure conditions.

[0041] Meanwhile, regarding the upper electrode (22), the outer upper electrode (23) is used as the main electrode and the inner upper electrode (24) as the secondary electrode for generating plasma, and the ratio of the electric field strength applied to electrons directly below the upper electrode (22) by the upper high-frequency power source (31) and the lower high-frequency power source (59) can be adjusted. Accordingly, the spatial distribution of ion density is controlled in the radial direction, and the spatial characteristics of reactive ion etching can be controlled arbitrarily and finely.

[0042] [Details of the shutter mechanism (80)]

[0043] FIG. 2 is a partial enlarged view illustrating an example of a cross-section of a shutter mechanism in the present embodiment. FIG. 3 is a drawing illustrating an example of an external view of a shutter mechanism in the present embodiment. As shown in FIG. 2 and FIG. 3, the shutter mechanism (80) has a valve body (81) having a length of more than half of the inner circumference of the chamber (10), and two or more lifting mechanisms (82) for raising and lowering the valve body (81). For example, as shown in FIG. 3, the valve body (81) may be an annular valve body that follows the inner circumference of the chamber (10). The valve body (81) has a conductive member (83) that contacts a first depot shield (71) when the opening (51) is closed, and a conductive member (84) that contacts a second depot shield (72).

[0044] The valve body (81) is formed with a cross-section approximately L-shaped, for example, by aluminum material. The surface of the valve body (81) is coated with, for example, Y2O3. A conductive member (83) is disposed on the upper part of the valve body (81). Additionally, a conductive member (84) is disposed on the stepped part of the valve body (81). The conductive members (83, 84) are conductive elastic members, also referred to as conductance bands or spirals. Additionally, the conductive members (83, 84) may be made of, for example, stainless steel or nickel alloy. The conductive members (83, 84) are formed by, for example, winding a strip-shaped member into a spiral shape. Additionally, the conductive members (83, 84) may be made of, for example, an inclined coil spring having a U-shaped jacket. That is, the conductive members (83, 84) are pressed when the valve body (81) comes into contact with the first depot shield (71) and the second depot shield (72).

[0045] The lifting mechanism (82) has a rod, and the rod is fixed to the lower part of the valve body (81) by means of a screw or the like. The lifting mechanism (82) raises the rod up and down, for example, by means of an air cylinder or a motor. When the lifting mechanism (82) uses an air cylinder, the flow rate of dry air supplied to each lifting mechanism (82) is controlled to be equal. In the example of FIG. 3, three lifting mechanisms (82) are arranged at equal intervals of 120 degrees. By each lifting mechanism (82) raising and lowering at the same timing and speed, the valve body (81) can be raised without the valve body (81) bending or tilting. In addition, for example, if the valve body (81) is a semicircular shape following the inner circumference of the chamber (10), it can be raised in the same way by providing lifting mechanisms (82) at both ends.

[0046] In the shutter mechanism (80), the opening (51) is closed by the valve body (81) being pushed upward by the lifting mechanism (82), and the opening (51) is opened by pulling downward by the lifting mechanism (82). With the valve body (81) closing the opening (51), the valve body (81) is electrically connected to the first depot shield (71) and the second depot shield (72) through the conductive members (83, 84) positioned at the top and bottom of the valve body (81), respectively, by contacting the first depot shield (71) and the second depot shield (72). The first depot shield (71) and the second depot shield (72) are in contact with the grounded chamber (10). For this reason, the valve body (81) is grounded through the first depot shield (71) and the second depot shield (72) while the opening (51) is closed.

[0047] In addition, in the shutter mechanism (80), since the valve body (81) corresponds to a part of the conventional depot shield, it corresponds to a part of the conventional depot shield divided into multiple parts. The conventional depot shield was heavy, so maintenance work was difficult, but in this embodiment, since it is divided into a first depot shield (71), a second depot shield (72), and a valve body (81), it becomes easier to work during maintenance.

[0048] [Appearance of the chamber (10)]

[0049] FIGS. 4 to 6 are drawings illustrating an example of the external appearance of the chamber in the present embodiment. Additionally, FIGS. 4 to 6 illustrate a state excluding the susceptor (13), upper electrode (22), feed tube (30), and valve body (81), etc., for the purpose of explanation. As shown in FIGS. 4 to 6, the chamber (10) is provided with three lifting mechanisms (82) at equal intervals, for example, every 120 degrees. The opening (51) has a width capable of transporting not only the wafer (W) but also, for example, an edge ring (17) or a cover ring (54). A gate valve (52) is connected to the outer side of the opening (51). The opening (51) is closed by the upward movement of the annular valve body (81).

[0050] According to the above embodiment, the shutter mechanism (80) is a shutter mechanism for opening and closing an opening (51) of a cylindrical chamber (10) of a substrate processing device (plasma processing device (1)), and comprises a valve body (81) and a lifting mechanism (82). The valve body (81) has a length of more than half of the inner circumference of the chamber (10). The lifting mechanism (82) is connected to the lower part of the valve body (81) and is a two or more lifting mechanism that lifts the valve body (81). As a result, the opening (51) can be enlarged, and at the same time, the valve body (81) can be pressed against the first depot shield (71) with a uniform force. In addition, the bias in the electrical conduction between the valve body (81) and the first depot shield (71) can be eliminated. In addition, the load of each lifting mechanism (82) can be reduced. That is, the lifting mechanism (82) can be miniaturized.

[0051] In addition, according to the present embodiment, the valve body (81) is circular. As a result, the valve body (81) can be pressed with a uniform force against the first depot shield (71) without the valve body (81) tilting.

[0052] In addition, according to the present embodiment, there are three or more lifting mechanisms (82). As a result, the valve body (81) can be pressed against the first depot shield (71) with a uniform force without the valve body (81) tilting.

[0053] In addition, according to the present embodiment, the lifting mechanism (82) is arranged at equal intervals. As a result, the valve body (81) can be pressed against the first depot shield (71) with a uniform force without the valve body (81) tilting.

[0054] In addition, according to the present embodiment, the valve body (81) has a conductive member (83) on a conductive surface that contacts an upper member (first depot shield (71)) provided along the inner wall of the upper part of the chamber (10). As a result, the deviation in conductivity between the valve body (81) and the first depot shield (71) can be eliminated.

[0055] The embodiments disclosed herein are illustrative in all respects and should be considered not to be restrictive. Each of the above embodiments may be omitted, substituted, or modified in various forms without departing from the scope and common sense of the appended claims.

[0056] In addition, in the above-described embodiment, a plasma processing device (1) was cited as an example of a substrate processing device, but it is not limited thereto. For example, it can also be applied to a substrate processing device that does not use plasma and performs processing by alternately and repeatedly using a plurality of processing gases, such as the Atomic Layer Deposition (ALD) method. Explanation of the symbols

[0057] 1: Plasma processing device 10: Chamber 13: Susceptor 14: Power Outage Chuck 17: Edge ring 22: Upper electrode 51: Opening 52: Gate valve 54: Covering 71: 1st Depot Shield 72: Second Depot Shield 80: Shutter mechanism 81: Valve body 82: Lifting mechanism 83, 84: Conductive element W: Wafer

Claims

Claim 1 A substrate processing apparatus comprising: a cylindrical chamber having an opening formed in a side wall; an annular valve body for opening and closing the opening; a first conductive member disposed above the valve body; an upper member having conductivity located above the valve body; and a lifting mechanism for raising and lowering the valve body, wherein when the valve body is raised, the first conductive member contacts the upper member in an up-and-down direction. Claim 2 In claim 1, the lifting mechanism is a substrate processing device having two or more. Claim 3 In claim 1, the lifting mechanism is a substrate processing device arranged at equal intervals. Claim 4 A substrate processing device according to claim 1, wherein a substrate to be processed is conveyed through the opening. Claim 5 In claim 1, the cross-section of the valve body is L-shaped, forming a substrate processing device. Claim 6 In claim 1, the upper member is a substrate processing device having a portion covered with stainless steel or nickel alloy. Claim 7 In claim 1, the first conductive member is a conductance band, spiral, or coil spring, which is a substrate processing device. Claim 8 A substrate processing apparatus according to any one of claims 1 to 7, further comprising: a susceptor disposed within the chamber and mounting a substrate to be processed; an annular baffle provided between the chamber and the susceptor; a lower member located below the baffle and having conductivity; and a second conductive member provided in the valve body and in contact with the lower member. Claim 9 In claim 8, when the valve body is raised, the second conductive member contacts the lower member in the vertical direction. Claim 10 A shutter mechanism for opening and closing an opening of a cylindrical chamber having an opening formed in a side wall, comprising an annular valve body for opening and closing the opening, a first conductive member disposed above the valve body, and a lifting mechanism for raising and lowering the valve body, wherein when the valve body is raised, the first conductive member is located above the valve body and contacts an upper member having conductivity in an up-and-down direction. Claim 11 In claim 10, the lifting mechanism is a shutter mechanism comprising two or more. Claim 12 In claim 10, the lifting mechanism is a shutter mechanism arranged at equal intervals. Claim 13 In claim 10, the cross-section of the valve body is an L-shaped shutter mechanism. Claim 14 In any one of claims 10 to 13, the first conductive member is a conductance band, spiral, or coil spring shutter mechanism.

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