Substrate processing method and substrate processing apparatus
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2023-12-28
- Publication Date
- 2026-08-03
Smart Images
Figure 112023146610704-PAT00003_ABST
Abstract
Description
Technology Field
[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. Background Technology
[0002] Patent Document 1 discloses forming each organic EL element by a patterning film corresponding to each color component. In Patent Document 1, the patterning film is formed in a flat shape and is executed using a metal mask made of a ferromagnetic material such as iron.
[0003] A method for manufacturing an organic EL display disclosed in Patent Document 2 comprises a process of depositing a first luminescent organic material comprising a mixture of a host material and a dopant material on top of an electrode array including first and second pixel electrodes formed on top of an insulating substrate, and forming a first emitting layer as a continuous film spread across a display area including the electrode array. Additionally, this manufacturing method comprises a process of irradiating ultraviolet light onto a portion of the first emitting layer located above the second pixel electrode without irradiating ultraviolet light onto a portion of the first emitting layer located above the first pixel electrode. Additionally, this manufacturing method comprises a process of depositing a second luminescent organic material, which comprises a mixture of a host material and a dopant material and is different from the first luminescent organic material, on the first emitting layer to form a second emitting layer as a continuous film spread across a display area, and a process of forming a counter electrode on top of the second emitting layer.
[0004] Patent Document 3 discloses a method for forming a device used in an Organic Light-Emitting Diode (OLED) display. The device comprises a plurality of subpixels, each of which is partitioned by an adjacent Pixel-Defining Layer (PDL) structure, and an overhang structure is formed on the PDL structure. The subpixel has an anode, an OLED material deposited on the anode, and a cathode deposited on the OLED material. The device is fabricated by a process comprising a process of depositing the OLED material and the cathode, and a process of forming an encapsulation layer deposited on the cathode. Prior art literature
[0005] Japanese Patent Publication No. 2003-157973 Japanese Patent Publication No. 2012-160473 U.S. Patent Application Publication No. 2022-77257 The problem to be solved
[0006] The technology according to the present disclosure appropriately forms a light-emitting layer made of an organic material without using a fine metal mask. means of solving the problem
[0007] One aspect of the present disclosure is a substrate processing method comprising: (A) preparing a substrate having an electrode array formed on a substrate surface having a plurality of electrodes arranged therein; (B) forming a specific type of light-emitting layer to cover the entire electrode array; (C) forming a temporary sealing film including a first inorganic insulating film covering the entire light-emitting layer; (D) forming a first mask on the temporary sealing film; (E) forming a laminate array, in which the temporary sealing film and the light-emitting layer are laminated, formed only on the electrode according to the specific type using the first mask; (F) subsequently forming a second inorganic insulating film to cover the entire laminate array; (G) forming a second mask on the second inorganic insulating film; and (H) removing the second inorganic insulating film in a portion corresponding to the electrode other than the electrode according to the specific type using the second mask so as not to expose the laminate array, wherein the processes (B) to (H) are performed for a plurality of types according to the light-emitting layer. Execute. Effects of the invention
[0008] According to the present disclosure, a light-emitting layer made of an organic material can be appropriately formed without using a fine metal mask. Brief explanation of the drawing
[0009] FIG. 1 is a plan view illustrating a schematic configuration of a substrate processing device according to the present embodiment. Figure 2 is a cross-sectional view illustrating a schematic configuration of the processing module. Figure 3 is a flowchart illustrating an example of a substrate processing sequence. Figure 4 is a schematic partial cross-sectional view illustrating the state of the substrate after each process of the substrate processing sequence. Figure 5 is a schematic partial cross-sectional view illustrating the state of the substrate after each process of the substrate processing sequence. Figure 6 is a schematic partial cross-sectional view illustrating the state of the substrate after each process of the substrate processing sequence. FIG. 7 is a schematic partial cross-sectional view illustrating the state of the substrate after each process of the substrate processing sequence. Figure 8 is a diagram illustrating another example of the process for forming a laminated array. Specific details for implementing the invention
[0010] Recently, organic EL (Electro-Luminescence) display devices have been attracting attention as display devices. Organic EL display devices have multiple organic EL elements, and each organic EL element is a stack of an organic EL layer including a light-emitting layer and an electrode layer.
[0011] In addition, as an organic EL display device, there are devices having multiple types of organic EL elements. Specifically, for example, as an organic EL display device, there is a full-color display device in which an organic EL element emitting red light, an organic EL element emitting green light, and an organic EL element emitting blue light are arranged.
[0012] In the case of such a display device, it is necessary to form organic EL layers corresponding to each type (specifically, for example, each color of red, green, and blue) at different locations. For example, as described in Patent Document 1, each type of organic EL layer is formed by a vacuum deposition method using a fine metal mask. The fine metal mask is a thin metal plate with fine holes arranged therein.
[0013] However, the method using fine metal masks has room for improvement, such as limitations in achieving high precision or large scale.
[0014] Therefore, the technology according to the present disclosure appropriately forms an organic EL layer without using a fine metal mask.
[0015] Hereinafter, a substrate processing method and a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In addition, in this specification and drawings, redundant descriptions are omitted for elements having substantially the same functional configuration by assigning the same reference numerals.
[0016] <Substrate processing device (1)>
[0017] FIG. 1 is a plan view illustrating a schematic configuration of a substrate processing device (1) according to the present embodiment.
[0018] The substrate processing apparatus (1) of FIG. 1 performs a process for forming a plurality of types of organic EL elements on a substrate (G), and specifically, performs a process for forming a plurality of types of organic EL layers that emit different colors for each type on the same substrate (G).
[0019] The substrate processing device (1) has a configuration in which a carrier station (10) capable of accommodating a plurality of substrates (G) is brought in and taken out, and a processing station (11) equipped with a plurality of processing modules (40) that perform a predetermined processing on the substrates (G) under reduced pressure are integrally connected. The carrier station (10) and the processing station (11) are connected via a load lock module (12).
[0020] The load lock module (12) has a load lock chamber (13) configured to switch the room between atmospheric pressure and vacuum conditions.
[0021] The carrier station (10) has a return mechanism (20).
[0022] The conveying mechanism (20) carries out the conveying of a substrate (G) between a carrier (C) mounted on a carrier mounting platform (21) and a load lock module (12) (specifically, a load lock chamber (13)) under atmospheric pressure. The conveying mechanism (20) has a conveying arm (20a) that supports the substrate (G) during conveying.
[0023] The processing station (11) has a vacuum conveying module (30) and a processing module (40). The number of processing modules (40) provided in the processing station (11) is multiple (in the example of the drawing, 3).
[0024] The vacuum conveying module (30) has a vacuum conveying chamber (31) in which the room is maintained in a reduced pressure state (vacuum state). The vacuum conveying chamber (31) is connected to the load lock chamber (13) of the load lock module (12) via a gate valve (G1). Additionally, a gate valve (G2) is provided on the conveying mechanism (20) side of the load lock chamber (13).
[0025] Additionally, the vacuum transport chamber (31) is connected to each of the vacuum processing chambers (41) described later via a gate valve (G3). Inside the vacuum transport chamber (31), a transport mechanism (32) for transporting a substrate (G) is provided. The transport mechanism (32) transports and takes out the substrate (G) to and from the processing module (40) (specifically, the vacuum processing chamber (41)) and the load lock module (12) (specifically, the load lock chamber (13)). The transport mechanism (32) has a transport arm (32a) that supports the substrate (G) during transport.
[0026] In this embodiment, each of the processing modules (40) performs the etching of the sealing film described later, the etching of the organic EL layer, and the formation of the second inorganic insulating film described later. That is, in this embodiment, each of the processing modules (40) functions as a removal unit and a film formation unit according to the present disclosure.
[0027] Each processing module (40) has a vacuum processing room (41) in which the above-described etching or film formation, etc., is performed on a substrate (G) in a room under reduced pressure.
[0028] In addition, the substrate processing device (1) is equipped with a control unit (50).
[0029] The control unit (50) includes, for example, a computer equipped with a processor such as a CPU or memory, and has a storage unit (not shown) that stores various information. The storage unit stores a program containing instructions for a processing sequence executed by a substrate processing device (1). In addition, the program may be recorded on a computer-readable storage medium and installed on the control unit (50) from said storage medium. Furthermore, the storage medium may be temporary or non-temporary.
[0030] <Processing Module (40)>
[0031] FIG. 2 is a cross-sectional view illustrating a schematic configuration of the processing module (40).
[0032] The processing module (40) is configured as a plasma processing device that performs plasma processing, i.e., plasma processing, on a substrate (G), for example, and has a rectangular container body (100) having a bottom portion as shown in the illustration.
[0033] The container body (100) is formed of a conductive material, for example, aluminum, and is electrically grounded. Since corrosive gases are often used in plasma treatment, the inner wall surface of the container body (100) may be treated with a corrosion-resistant coating, such as anodizing, to improve corrosion resistance. Additionally, an opening is formed on the upper surface of the container body (100). This opening is hermetically sealed by a rectangular metal window (120) provided insulated from the container body (100), and specifically, is hermetically sealed by the metal window (120) and the metal frame (110) described later. The space enclosed by the container body (100) and the metal window (120) becomes a processing space (K1) where the substrate (G) to be processed is located during plasma treatment, and the space above the metal window (120) becomes an antenna room (K2) where the high-frequency antenna (plasma antenna) (190) described later is placed. On the side wall of the vacuum conveying chamber (31) (see FIG. 1) of the container body (100), there is an inlet / outlet port (not shown) for bringing in and taking out a substrate (G) into and out of the processing space (K1), and a gate valve (G3) (see FIG. 1) for opening and closing the inlet / outlet port.
[0034] On the lower side of the processing space (K1), a mounting platform (130) is provided so as to face the metal window (120). The mounting platform (130) has a main body (131) whose upper surface is a substrate mounting surface on which a substrate (G) is mounted, and the main body (131) is installed on the bottom surface of the container body (100) via a leg portion (132).
[0035] The main body (131) is provided with a base (131a) made of a conductive material, for example, aluminum, and an electrostatic chuck (131b) that holds a substrate (G) by electrostatic adsorption.
[0036] A high-frequency power supply (141) is connected to the base (131a) via a matching unit (140). The high-frequency power supply (141) supplies high-frequency power for biasing, for example, high-frequency power with a frequency of 3.2 MHz, to the base (131a). By doing so, ions in the plasma generated within the processing space (K1) can be introduced into the substrate (G).
[0037] An exhaust port (101) is formed in the bottom wall of the container body (100), and an exhaust unit (150) having a vacuum pump or the like is connected to the exhaust port (101). The processing space (K1) is depressurized by the exhaust unit (150).
[0038] On the upper side of the side wall of the container body (100), a metal frame (110), which is a rectangular frame formed of a metal material such as aluminum, is provided. Between the container body (100) and the metal frame (110), a sealing member (111) is provided to maintain a hermetic seal on the processing space (K1). In addition, the container body (100), the metal frame (110), and the metal window (120) are configured to allow for pressure reduction and form a processing container that accommodates a mounting stand (130), and also form the aforementioned vacuum processing chamber (41).
[0039] The metal window (120) is formed in a rectangular shape when viewed from a flat surface, for example. Additionally, the metal window (120) functions as a shower head that supplies processing gas to the processing space (K1). For example, the metal window (120) has a plurality of gas discharge holes (121) for discharging processing gas downward and a diffusion chamber (122) for diffusing processing gas, and the gas discharge holes (121) and the diffusion chamber (122) are connected.
[0040] Additionally, the metal window (120) is electrically insulated from the metal frame (110) by an insulating member (123).
[0041] In the diffusion chamber (122), the etching gas supply unit (200 to 202), the ashing gas supply unit (203), and the film-forming gas supply unit (204) are connected via the supply pipe (210).
[0042] The etching gas supply unit (200) supplies etching gas for an inorganic insulating film.
[0043] The etching gas supply unit (201) supplies etching gas for the cathode.
[0044] The etching gas supply unit (202) supplies etching gas for the organic EL layer.
[0045] The ashing gas supply unit (203) supplies ashing gas for the resist mask.
[0046] The film-forming gas supply unit (204) supplies film-forming gas for an inorganic insulating film.
[0047] The etching gas supply unit (200 to 202), ashing gas supply unit (203), and film-forming gas supply unit (204) each have an opening / closing valve (not shown) for switching the start and stop of gas supply, a flow controller (not shown) for adjusting the flow rate of the supplied gas, etc. When supplying a mixed gas in which multiple types of gases are mixed, the etching gas supply unit (200 to 202), ashing gas supply unit (203), and film-forming gas supply unit (204) are configured to be able to adjust the mixing ratio.
[0048] In addition, a purge gas supply unit (not shown) that supplies purge gas, such as inert gas, is also connected to the diffusion chamber (122).
[0049] The space enclosed by the metal window (120), side wall (181), and top plate (180) described above constitutes an antenna room (K2), and a high-frequency antenna (190) is positioned inside the antenna room (K2) so as to face the metal window (120).
[0050] A high-frequency antenna (190) is positioned apart from a metal window (120) through a spacer (not shown) formed of an insulating material, for example.
[0051] A high-frequency power supply (143) is connected to the high-frequency antenna (190) via a matching unit (142). High-frequency power of, for example, 13.56 MHz is supplied to the high-frequency antenna (190) from the high-frequency power supply (143) via the matching unit (142). Accordingly, during plasma treatment, an induced electric field is formed inside the treatment space (K1) via the metal window (120), and the treatment gas discharged from the gas discharge hole (121) is plasmafied by the induced electric field.
[0052] Substrate Processing
[0053] Next, an example of a substrate processing sequence including a processing sequence executed by a substrate processing device (1) will be described. FIG. 3 is a flowchart illustrating an example of a substrate processing sequence. FIG. 4 and FIG. 5 are schematic partial cross-sectional views illustrating the state of the substrate (G) after each process of the substrate processing sequence.
[0054] (Step S1)
[0055] First, as shown in FIG. 3, the following substrate (G) is prepared.
[0056] As shown in (A) of FIG. 4, the substrate (G) prepared in step S1 has an electrode array (CAr) formed on its surface, in which a plurality of anodes (Ca) as electrodes are arranged. Additionally, a pixel defining layer (PDL) is formed on the substrate (G) prepared in step S1. The pixel defining layer (PDL) partitions pixels while electrically insulating neighboring anodes (Ca).
[0057] The substrate (G) is, for example, a glass plate, but may also be a ceramic plate, a plastic plate, a metal plate, etc.
[0058] Step S1 may include a process for forming an electrode array (CAr). For example, a deposition method is used for forming the electrode array (CAr). For example, indium tin oxide (ITO) is used as the material for the anode (Ca) constituting the electrode array (CAr).
[0059] Additionally, step S1 may include a process for forming a pixel defining layer (PDL). The pixel defining layer (PDL) is formed by a lithography process using a resist (e.g., a photolithography process using a photoresist). Additionally, the pixel defining layer (PDL) is formed such that a portion of each anode (Ca) of the electrode array (CAr) is exposed.
[0060] (Step S2)
[0061] Next, as shown in (B) of FIG. 4, an organic EL layer (EL) including a specific type of light-emitting layer is formed to cover the entire electrode array (CAr).
[0062] Specifically, for example, an organic EL layer (EL) of a specific color is formed, and more specifically, for example, an organic EL layer is formed for one specific color among red (R), green (G), and blue (B).
[0063] The organic EL layer (EL) is formed as a continuous film. Additionally, the organic EL layer (EL) may have other layers, such as an electron transport layer, in addition to the emitting layer. The emitting layer of the organic EL layer (EL) is capable of receiving electrons and holes from the electrodes, and an organic light-emitting material is used as the material, in which the injected charges move and the holes and electrons recombine to emit light. Known methods or materials may be used for forming the organic EL layer (EL). The thickness of the organic EL layer (EL) is, for example, 0.1 μm to 0.5 μm.
[0064] In addition, in step S2, a cathode (Cc) is formed by overlapping it on the organic EL layer (EL) so as to cover the entire organic EL layer (EL).
[0065] The cathode (Cc) is formed as a continuous film, similar to the organic EL layer (EL). For example, a deposition method is used to form the cathode (Cc). Known materials can be used for the cathode (Cc). The thickness of the cathode (Cc) is, for example, 0.01 μm to 0.1 μm.
[0066] (Step S3)
[0067] Next, as shown in (C) of FIG. 4, a first inorganic insulating film (ZI1) is formed as a sealing film to cover the entire organic EL layer (EL). Specifically, the first inorganic insulating film (ZI1) is formed to seal the organic EL layer (EL) and the cathode (Cc).
[0068] The first inorganic insulating film (ZI1) is formed, for example, by any one of silicon nitride (SiN), silicon oxide (SiO), and silicon nitride oxide (SiON), or a combination thereof. Additionally, the first inorganic insulating film (ZI1) is formed on the entire surface of the substrate (G). The thickness of the first inorganic insulating film (ZI1) is, for example, 0.1 μm to 1.5 μm.
[0069] (Step S4)
[0070] After that, as shown in (D) of Fig. 4, a first mask (PRM1) is formed on the sealing film (in this example, on the first inorganic insulating film (ZI1)).
[0071] The first mask (PRM1) is formed as a resist for lithography processing, specifically, for example, as a photoresist for photolithography.
[0072] The formation of the first mask (PRM1) is carried out by, for example, forming a resist film to cover a sealing film, i.e., the first inorganic insulating film (ZI1), and then exposing and developing the resist film. The first mask (PRM1) covers the portion of the first inorganic insulating film (ZI1) corresponding to an anode (Ca) of a specific type (specifically, for example, a specific color among R, G, and B), and exposes the portion of the other anode (Ca).
[0073] In addition, the first mask (PRM1) is thicker than the organic EL layer, for example, with a thickness of 0.5 μm to 2.5 μm.
[0074] (Step S5)
[0075] Next, as illustrated in (E) of FIG. 4, a first mask (PRM1) is used, and a laminate array (La) in which the laminates are arranged is formed. The laminate is formed by stacking a first inorganic insulating film (ZI1) and an organic EL layer (EL) as a sealing film, specifically, a cathode (Cc), an organic EL layer (EL), and a first inorganic insulating film (ZI1) are stacked in this order from the bottom. Furthermore, the laminate array (La) is formed by forming the laminate only on an anode (Ca) corresponding to a specific type (specifically, for example, a specific color among R, G, and B) among the anodes (Ca) constituting the electrode array (CAr).
[0076] In step S5, specifically, the sealing film (in this example, the first inorganic insulating film (ZI1)), cathode (Cc), and organic EL layer (EL) are removed by the substrate processing device (1) through the first mask (PRM1).
[0077] More specifically, for example, the substrate (G) after step S4, that is, the substrate (G) on which the first mask (PRM1) is formed, is ejected from the carrier (C) by the return arm (20a) of the return mechanism (20), and at the same time, the gate valve (G2) is opened. Then, the substrate (G) is brought into the load lock module (12) (specifically, into the load lock chamber (13)) by the return arm (20a). Subsequently, the gate valve (G2) is closed, the load lock chamber (13) is sealed, and the pressure is reduced. When the pressure inside the load lock chamber (13) becomes below a predetermined pressure, the gate valve (G1) is opened, and the substrate (G) is ejected from the load lock chamber (13) by the return arm (32a) of the return mechanism (32) and brought into the vacuum return chamber (31). Next, after the gate valve (G1) is closed, the gate valve (G3) for the desired processing module (40) is opened. Subsequently, the substrate (G) is brought into the processing module (40) (specifically, into the vacuum processing chamber (41)) by the return arm (32a) and mounted on the upper surface of the main body (131) of the mounting stand (130). After that, the gate valve (G3) is closed. Then, the processing space (K1) is exhausted by the exhaust unit (150) until the processing space (K1) reaches a predetermined pressure.
[0078] Next, the first inorganic insulating film (ZI1) is removed by passing through the first mask (PRM1).
[0079] Specifically, for example, while the processing space (K1) is being exhausted by the exhaust unit (150), etching gas for an inorganic insulating film is supplied into the processing space (K1) as a processing gas from the etching gas supply unit (200) through the diffusion chamber (122) and the gas discharge hole (121). Then, when the processing space (K1) reaches a desired pressure, high-frequency power is supplied from the high-frequency power source (143) to the high-frequency antenna (190), thereby creating an induced electric field within the processing space (K1) through the metal window (120). Furthermore, due to the induced electric field, the etching gas within the processing space (K1) becomes plasma, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are introduced into the substrate (G) by the high-frequency power for bias supplied from the high-frequency power source (141) to the main body (131) of the mounting platform (130). As a result, the first inorganic insulating film (ZI1) is removed by passing through the first mask (PRM1).
[0080] In addition, this removal, i.e., etching, is performed until the portion exposed from the first mask (PRM1) in the first inorganic insulating film (ZI1) is lost, for example.
[0081] After the removal of the first inorganic insulating film (ZI1) is finished, the power supply from the high-frequency power supply (141, 143) and the supply of etching gas from the etching gas supply unit (200) are stopped, and at the same time, the processing space (K1) is purged.
[0082] Next, the cathode (Cc) is removed by passing through the first mask (PRM1).
[0083] Specifically, for example, while the processing space (K1) is being exhausted by the exhaust unit (150), etching gas for the cathode is supplied as a processing gas from the etching gas supply unit (201) through the diffusion chamber (122) and the gas discharge hole (121) into the processing space (K1). Then, when the processing space (K1) reaches a desired pressure, high-frequency power is supplied from the high-frequency power source (143) to the high-frequency antenna (190), thereby creating an induced electric field within the processing space (K1) through the metal window (120). Furthermore, due to the induced electric field, the etching gas within the processing space (K1) is plasmafied, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are introduced into the substrate (G) by the high-frequency power for bias supplied from the high-frequency power source (141) to the main body (131) of the mounting platform (130). As a result, the cathode (Cc) is removed by passing through the first mask (PRM1).
[0084] In addition, this removal, i.e., etching, is performed until the portion exposed from the first mask (PRM1) in the cathode (Cc) is lost.
[0085] After the removal of the cathode (Cc) is finished, the power supply from the high-frequency power supply (141, 143) and the supply of etching gas from the etching gas supply unit (201) are stopped, and at the same time, the processing space (K1) is purged.
[0086] After that, the organic EL layer (EL) is removed through the first mask (PRM1), and a stacked array (La) is formed.
[0087] Specifically, for example, while the processing space (K1) is being exhausted by the exhaust unit (150), an etching gas for an organic EL layer is supplied into the processing space (K1) as a processing gas from the etching gas supply unit (202) through the diffusion chamber (122) and the gas discharge hole (121). Then, when the processing space (K1) reaches a desired pressure, high-frequency power is supplied from the high-frequency power source (143) to the high-frequency antenna (190), thereby creating an induced electric field within the processing space (K1) through the metal window (120). Furthermore, due to the induced electric field, the etching gas within the processing space (K1) is plasmafied, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are introduced into the substrate (G) by the high-frequency power for bias supplied from the high-frequency power source (141) to the main body (131) of the mounting platform (130). As a result, the organic EL layer (EL) is removed by passing through the first mask (PRM1), and a stacked array (La) is formed.
[0088] In addition, this removal, i.e., etching, is performed until the portion exposed from the first mask (PRM1) in the organic EL layer (EL) is lost.
[0089] After the removal of the organic EL layer (EL) is finished, the power supply from the high-frequency power supply (141, 143) and the supply of etching gas from the etching gas supply unit (202) are stopped, and at the same time, the processing space (K1) is purged.
[0090] In addition, at the stage where the removal of the organic EL layer (EL), that is, the formation of the laminated array (La), is completed, the side ends of the organic EL layer (EL) and the cathode (Cc) in each of the laminates constituting the laminated array (La) are not covered by the first inorganic insulating film (ZI1) or the like, and are exposed.
[0091] (Step S6)
[0092] Next, as shown in (A) of FIG. 5, the first mask (PRM1) is removed.
[0093] Specifically, the first mask (PRM1) is removed by the substrate processing device (1) that performed step S5, without the substrate (G) being exposed to the atmosphere after step S5.
[0094] More specifically, for example, while the processing space (K1) is being exhausted by the exhaust unit (150), an ashing gas for the resist mask is supplied into the processing space (K1) as a processing gas from the ashing gas supply unit (203) through the diffusion chamber (122) and the gas discharge hole (121). Then, when the processing space (K1) reaches a desired pressure, high-frequency power is supplied from the high-frequency power source (143) to the high-frequency antenna (190), thereby creating an induced electric field within the processing space (K1) through the metal window (120). Furthermore, due to the induced electric field, the etching gas within the processing space (K1) is plasmafied, and a high-density inductively coupled plasma is generated. Then, the first mask (PRM1) is removed by passing through the first mask (PRM1) by ions or radicals in the plasma.
[0095] In addition, this removal, i.e., ashing, is performed until the first mask (PRM1) is lost.
[0096] After the removal of the first mask (PRM1) is finished, the power supply from the high-frequency power source (141) and the supply of ashing gas from the ashing gas supply unit (203) are stopped, and at the same time, the processing space (K1) is purged.
[0097] (Step S7)
[0098] After that, as shown in (B) of FIG. 5, a second inorganic insulating film (ZI2) is formed to cover the entire stacked array (La).
[0099] Specifically, a second inorganic insulating film (ZI2) is formed by the CVD method so as to seal each of the laminates constituting the laminate array (La) by the substrate processing device (1) that performed steps S5 and S6, without the substrate (G) being exposed to the atmosphere after step S5. By doing so, the exposed side ends of the organic EL layer (EL) and the cathode (Cc) of the laminate constituting the laminate array (La) are covered by the second inorganic insulating film (ZI2).
[0100] The second inorganic insulating film (ZI2) is formed as a continuous film. Additionally, the second inorganic insulating film (ZI2) is formed by any one of SiN, SiO, and SiON, or a combination thereof, for example, just like the first inorganic insulating film (ZI1).
[0101] In step S7, specifically, for example, while the processing space (K1) is being exhausted by the exhaust unit (150), a film-forming gas for an inorganic insulating film is supplied into the processing space (K1) from the film-forming gas supply unit (204) through the diffusion chamber (122) and the gas discharge hole (121). Then, when the pressure inside the processing space (K1) reaches the desired pressure, high-frequency power is supplied from the high-frequency power source (143) to the high-frequency antenna (190), thereby creating an induced electric field inside the processing space (K1) through the metal window (120). Furthermore, due to the induced electric field, the film-forming gas inside the processing space (K1) is plasmafied, and a high-density inductively coupled plasma is generated. Then, ions in the plasma are introduced into the substrate (G) by the high-frequency power for bias supplied from the high-frequency power source (141) to the main body (131) of the mounting platform (130). As a result, a second inorganic insulating film (ZI2) is formed on the entire surface of the substrate (G).
[0102] The formation of the second inorganic insulating film (ZI2) is carried out until the second inorganic insulating film (ZI2) of the desired thickness is formed.
[0103] After the formation of the second inorganic insulating film (ZI2) is finished, the power supply from the high-frequency power supply (141, 143) and the supply of film-forming gas from the film-forming gas supply unit (204) are stopped, and the processing space (K1) is purged.
[0104] After that, the substrate (G) is removed.
[0105] Specifically, the substrate (G) is transferred from the processing module (40) to the carrier (C) on the carrier mounting stand (21) in the reverse order of the transfer of the substrate (G) to the processing module (40).
[0106] Additionally, steps S5 to S7 described above are executed under the control of the control unit (50).
[0107] (Step S8)
[0108] Next, as shown in (C) of FIG. 5, a second mask (PRM2) is formed on the second inorganic insulating film (ZI2).
[0109] The second mask (PRM2) is formed with a resist for lithography processing, specifically, for example, with a photoresist for photolithography.
[0110] The formation of the second mask (PRM2) is carried out, for example, by forming a resist film to cover the second inorganic insulating film (ZI2), and then exposing and developing the resist film. Similar to the first mask (PRM1), the second mask (PRM2) covers the portion corresponding to the anode (Ca) according to a specific type (specifically, for example, a specific color among R, G, and B) among the second inorganic insulating film (ZI2), and exposes the portion corresponding to the other anode (Ca).
[0111] (Step S9)
[0112] Next, as illustrated in (D) of FIG. 5, a second mask (PRM2) is used, and the second inorganic insulating film (ZI2) corresponding to the portion of the anode (Ca) other than the anode (Ca) of a specific type is removed. This removal is performed so that the laminate formed on the portion corresponding to the anode (Ca) of a specific type is not exposed. That is, the removal of the second inorganic insulating film (ZI2) is performed so that the side edges of the organic EL layer (EL) and the cathode (Cc) of the laminate constituting the laminate array (La), which were covered by the second inorganic insulating film (ZI2) in step S7, are not exposed again.
[0113] In addition, this removal, i.e., etching, is performed until the portion exposed from the second mask (PRM2) in the second inorganic insulating film (ZI2) is lost.
[0114] (Step S10)
[0115] After that, as shown in (E) of Fig. 5, the second mask (PRM2) is removed.
[0116] And, steps S2 to S10 described above are performed for each of the plurality of types according to the organic EL layer.
[0117] Specifically, for example, steps S2 to S10 described above are executed for R, and then executed sequentially for G and B, respectively.
[0118] Accordingly, each type of organic EL layer (EL) is formed on the corresponding anode (Ca) and is also sealed.
[0119] <Main Effects of the Present Embodiment>
[0120] The organic EL layer (EL) formed according to the above substrate processing sequence is sealed and not exposed to the surroundings. Therefore, according to the above substrate processing sequence, the deterioration of the formed organic EL layer (EL) due to surrounding influences can be suppressed when another type of organic EL layer (EL) is subsequently formed and sealed. Specifically, for example, when the organic EL layer of R formed first is subsequently formed and sealed, the deterioration due to moisture in the atmosphere to which the substrate (G) is exposed or the developer solution used when forming the first mask (PRM1) can be suppressed.
[0121] In addition, according to the above substrate processing sequence, after the etching of the organic EL layer (EL) of step S5, that is, after the formation of the laminated array (La) containing the organic EL layer (EL), the formation of the second inorganic insulating film (ZI2) of step S7 can be performed within the same substrate processing device (1) without the substrate (G) being exposed to the atmosphere. Therefore, between the formation of the laminated array (La) and the sealing of the laminated array (La), the deterioration of the organic EL layer (EL) of the laminate constituting the laminated array (La) due to the influence of moisture in the atmosphere can be suppressed.
[0122] Also, a fine metal mask is not used in the above substrate processing sequence.
[0123] That is, according to the present embodiment, an organic EL layer (EL) can be properly formed without using a fine metal mask.
[0124] In addition, while the method disclosed in Patent Document 2 is limited to the applicable organic EL layer material, the substrate processing sequence according to the present embodiment can be applied regardless of the organic EL layer material.
[0125] In addition, when using an overhang structure as disclosed in Patent Document 3, it is necessary to appropriately control the amount of overhang that is difficult to control. In contrast, the substrate processing sequence does not require a complex structure such as an overhang structure, so it can be easily executed.
[0126] (Another example of a sealing membrane)
[0127] In the above example, the sealing film was composed of one layer of the first inorganic insulating film (ZI1), but it may be composed of multiple layers. FIGS. 6 and 7 are schematic partial cross-sectional views illustrating the state of the substrate (G) after each process of the substrate processing sequence, and illustrate the state when the sealing film is composed of multiple layers.
[0128] In this case as well, for example, steps S1 and S2 of the substrate processing sequence of the example of the tactical example are executed, and an organic EL layer (EL) and a cathode (Cc) are formed on the substrate (G).
[0129] Next, as shown in (A) of FIG. 6, for example, a film (hereinafter referred to as a laminated sealing film (LS)) is formed by stacking a first inorganic insulating film (ZI1), an organic insulating film (ZO), and a third inorganic insulating film (ZI3) in this order from the bottom as a sealing film to cover the entire organic EL layer (EL).
[0130] The organic insulating film (ZO) is formed, for example, by a wet film deposition method, specifically by an inkjet method, and more specifically by extruding a droplet of material by an inkjet device and curing it. The organic insulating film (ZO) is formed, for example, by either acrylic or polyurea or a combination thereof. The organic insulating film (ZO) is thicker than the organic EL layer, for example, with a thickness of 8 μm to 10 μm. In addition, the organic insulating film (ZO) is formed so that its upper surface is flat.
[0131] The third inorganic insulating film (ZI3) is formed by any one of SiN, SiO, and SiON or a combination thereof, for example, like the first inorganic insulating film (ZI1). The thickness of the third inorganic insulating film (ZI3) is, for example, 0.1 μm to 1.5 μm.
[0132] In addition, the organic insulating film (ZO) and the third inorganic insulating film (ZI3) are formed on the entire surface of the substrate (G), just like the first inorganic insulating film (ZI1).
[0133] After that, for example, as shown in (B) of FIG. 6, a first mask (PRM1) is formed on the sealing film (in this example, on the laminated sealing film) in the same way as in step S4 of the invention.
[0134] Next, as illustrated in (C) of FIG. 6, a first mask (PRM1) is used in the same manner as in step S5 of the prior art, and a laminate array (Laa) in which the laminates are arranged is formed. The laminate is formed by stacking a laminate sealing film (LS) as a sealing film and an organic EL layer (EL); specifically, the organic EL layer (EL), the cathode (Cc), and the laminate sealing film (LS) are stacked in this order from the bottom. Furthermore, the laminate array (Laa) is formed by forming the laminate only on the anode (Ca) corresponding to a specific type (specifically, for example, a specific color among R, G, and B) among the anodes (Ca) constituting the electrode array (CAr).
[0135] In this process, specifically, the sealing film (in this example, the stacked sealing film (LS), cathode (Cc), and organic EL layer (EL) are removed by passing through the first mask (PRM1) by the substrate processing device (1). In addition, the first mask (PRM1) may be formed from a photoresist for photolithography, or it may be a mask made of an inorganic insulating film by the CVD method, or it may be a combination of a photoresist and an inorganic insulating film.
[0136] Next, as shown in (D) of Fig. 6, the first mask (PRM1) is removed, just like in step S6 of the tactical process.
[0137] After that, as shown in (A) of FIG. 7, a second inorganic insulating film (ZI2) is formed to cover the entire stacked array (Laa), as in step S7 of the tactical method.
[0138] Specifically, a second inorganic insulating film (ZI2) is formed by a substrate processing device (1) that performs the formation of a laminated array (Laa) without the substrate (G) being exposed to the atmosphere after the formation of the laminated array (Laa).
[0139] Next, as shown in (B) of FIG. 7, a second mask (PRM2) is formed on the second inorganic insulating film (ZI2), similar to step S8 of the tactical process.
[0140] Continuing, as illustrated in (C) of FIG. 7, a second mask (PRM2) is used in the same manner as in step S9 of the tactical method, and the second inorganic insulating film (ZI2) corresponding to the portion of the anode (Ca) other than the anode (Ca) according to a specific type is removed. This removal is performed so that the laminate formed on the portion corresponding to the anode (Ca) according to a specific type is not exposed.
[0141] Also, just like in tactical step S10, the second mask (PRM2) is removed.
[0142] (Another example of the formation process of a stacked array (La))
[0143] Figure 8 is a diagram illustrating another example of the formation process of a laminated array (La).
[0144] In the above example, when forming a laminated array (La) using the first mask (PRM1), the removal of the first inorganic insulating film (ZI1) that has passed through the first mask (PRM1) was carried out until the portion exposed from the first mask (PRM1) in the first inorganic insulating film (ZI1) was lost, but it may be done as follows.
[0145] That is, for example, first, as shown in (A) of FIG. 8, the removal of the first inorganic insulating film (ZI1) through the first mask (PRM1) is performed such that a portion of the part exposed from the first mask (PRM1) in the first inorganic insulating film (ZI1) remains. That is, through the first mask (PRM1), the sealing film of the portion corresponding to an anode (Ca) other than a specific type is removed such that a portion of it remains.
[0146] Next, as shown in (B) of FIG. 8, the first mask (PRM1) is removed by ashing, just like in step S6 of the tactical process.
[0147] Next, as shown in (C) of FIG. 8, the entire first inorganic insulating film (ZI1) including a portion corresponding to an anode (Ca) of a specific type is etched.
[0148] This etching is performed until the first inorganic insulating film (ZI1) corresponding to the anode (Ca) other than the anode (Ca) of a specific type is lost.
[0149] After that, as shown in (D) of FIG. 8, the remaining first inorganic insulating film (ZI1) is used as a mask, and the cathode (Cc) and organic EL layer (EL) are removed to form a laminated array (La).
[0150] That is, after ashing of the first mask (PRM1), the remaining first inorganic insulating film (ZI1), cathode (Cc), and organic EL layer (EL) are removed for the portion corresponding to the anode (Ca) other than the anode (Ca) according to a specific type, and a laminated array (La) is formed.
[0151] By forming the stacked array (La) in this way, damage to the organic EL layer (EL) during ashing of the first mask (PRM1) can be suppressed. Additionally, damage to the cathode (Cc) during ashing of the first mask (PRM1) can be suppressed.
[0152] (Variation Example)
[0153] In the above examples, the formation of the laminated array and the formation of the second inorganic insulating film were performed in one processing module (40), but some of them may be performed in another or multiple processing modules (40). For example, each process included in the formation of the laminated array and the formation of the second inorganic insulating film may be performed in separate processing modules (40).
[0154] However, by performing the entire process of forming the laminated array and the second inorganic insulating film in one processing module (40), that is, in one vacuum processing room (41), there is no need to transport the substrate (G) between processes. Therefore, it is possible to suppress the decrease in productivity caused by introducing a new process and the attachment of foreign substances to the substrate (G) during transport.
[0155] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or modified in various forms without departing from the appended claims and their common knowledge. For example, the constituent elements of the above embodiments may be combined at will. From any such combination, the operation and effect of each constituent element according to the combination are naturally obtained, while other operations and other effects are evident to those skilled in the art from the description in this specification.
[0156] Furthermore, the effects described in this specification are merely illustrative or exemplary and are not limiting. That is, the technology according to this disclosure may exhibit other effects that are obvious to those skilled in the art from the description in this specification, in addition to or instead of the above effects.
[0157] In addition, the following configuration examples also fall within the technical scope of the present disclosure.
[0158] (1) (A) A process of preparing a substrate having an electrode array formed on the surface of the substrate in which a plurality of electrodes are arranged, and
[0159] (B) A process of forming a specific type of light-emitting layer to cover the entire electrode array, and
[0160] (C) A process of forming a sealing film comprising a first inorganic insulating film covering the entire light-emitting layer, and
[0161] (D) A process of forming a first mask on the above-mentioned sealing film, and
[0162] (E) A process of forming a laminate array, in which the laminate having the sealing film and the light-emitting layer is laminated, formed only on the electrode according to the specific type using the first mask, and
[0163] (F) Subsequently, a process of forming a second inorganic insulating film to cover the entire laminated array, and
[0164] (G) A process of forming a second mask on the second inorganic insulating film, and
[0165] (H) A process comprising removing the second inorganic insulating film of the portion corresponding to the electrode other than the electrode according to the specific type using the second mask so as not to expose the laminated array, and
[0166] A substrate processing method in which the above (B) to (H) processes are performed for a plurality of types according to the light-emitting layer.
[0167] (2) The above multiple types are three types, a substrate processing method described in (1).
[0168] (3) The above multiple types are red, green, and blue, the substrate processing method described in (1) or (2).
[0169] (4) A substrate processing method described in any one of (1) to (3), wherein after the above (E) process, the substrate is not exposed to the atmosphere and the above (F) process is performed.
[0170] (5) A substrate processing method described in any one of (1) to (4), wherein the first mask is a mask of photoresist.
[0171] (6) A substrate processing method described in any one of (1) to (5), wherein the above sealing film is formed by stacking the first inorganic insulating film, the organic insulating film, and the third inorganic insulating film in order from bottom to top.
[0172] (7) The above organic insulating film is thicker than the above light-emitting layer, the substrate processing method described in (6).
[0173] (8) The above (E) process is,
[0174] (a) a process of removing the sealing film of the portion corresponding to the electrode other than the electrode according to the specific type, by passing through the first mask, such that a portion thereof remains, and
[0175] (b) Afterwards, a process of ashing the first mask and,
[0176] (c) Subsequently, a substrate processing method described in any one of (1) to (5), comprising a process of removing the remaining sealing film and the light-emitting layer from the portion corresponding to the electrode other than the electrode according to the specific type.
[0177] (9) In a substrate processing device for processing substrates,
[0178] The above substrate is,
[0179] An electrode array having multiple electrodes arranged is formed on the upper surface of a base substrate, and
[0180] A specific type of light-emitting layer is formed to cover the entire electrode array, and
[0181] A sealing film comprising a first inorganic insulating film covering the entire light-emitting layer is formed, and
[0182] A mask is formed on the above-mentioned sealing membrane, and
[0183] A removal unit that forms a laminate array, in which the above sealing film and the above light-emitting layer are laminated, formed only on the electrode according to the specific type using the above mask, and
[0184] A substrate processing apparatus having a film-forming section that forms a second inorganic insulating film to cover the entire laminated array. Explanation of the symbols
[0185] 1: Substrate processing unit 40: Processing module Ca: Anode CAr: Electrode array EL: Organic EL layer G: Substrate La, Laa: Laminated array LS: Laminated seal PRM1: 1st Mask PRM2: 2nd Mask ZI1: 1st inorganic insulating film ZI2: 2nd inorganic insulating film
Claims
Claim 1 (A) a process of preparing a substrate having an electrode array formed on the surface of the substrate having a plurality of electrodes arranged therein; (B) a process of forming a specific type of light-emitting layer to cover the entire electrode array; (C) a process of forming a sealing film including a first inorganic insulating film that covers the entire light-emitting layer; (D) a process of forming a first mask on the sealing film; (E) a process of forming a laminate array in which the sealing film and the light-emitting layer are laminated, formed only on the electrode according to the specific type, using the first mask; (F) thereafter, a process of forming a second inorganic insulating film to cover the entire laminate array; (G) a process of forming a second mask on the second inorganic insulating film; and (H) a process of removing the second inorganic insulating film in a portion corresponding to the electrode other than the electrode according to the specific type, using the second mask, so that the upper surface and side surface of the laminate array are not exposed, and a substrate processing method comprising performing the processes (B) to (H) for a plurality of types according to the light-emitting layer. Claim 2 In claim 1, the plurality of types is a substrate processing method in which there are three types. Claim 3 In claim 2, the above multiple types are red, green, and blue substrate processing methods. Claim 4 A substrate processing method according to any one of claims 1 to 3, wherein after process (E), the substrate is not exposed to the atmosphere and process (F) is performed. Claim 5 In any one of claims 1 to 3, the first mask is a method for processing a photoresist mask-based substrate. Claim 6 A substrate processing method according to any one of claims 1 to 3, wherein the sealing film is formed by stacking the first inorganic insulating film, the organic insulating film, and the third inorganic insulating film in order from bottom to top. Claim 7 In claim 6, the organic insulating film is a substrate processing method thicker than the light-emitting layer. Claim 8 A substrate processing method according to any one of claims 1 to 3, wherein the process (E) comprises: (a) a process of removing the sealing film of a portion corresponding to the electrode other than the electrode according to the specific type by passing through the first mask so that a portion thereof remains; (b) a process of ashing the first mask thereafter; and (c) a process of removing the remaining sealing film and the light-emitting layer from the portion corresponding to the electrode other than the electrode according to the specific type thereafter. Claim 9 A substrate processing apparatus for processing a substrate, wherein the substrate comprises an electrode array having a plurality of electrodes arranged thereon formed on the upper surface of a base substrate, a specific type of light-emitting layer formed to cover the entire electrode array, a sealing film including a first inorganic insulating film covering the entire light-emitting layer formed thereon, a mask formed on the sealing film, and a laminate formed only on the electrodes according to the specific type, wherein the laminate formed by stacking the sealing film and the light-emitting layer is formed using the mask, a removal unit, and a film formation unit, wherein a second inorganic insulating film is formed to cover the entire laminate array so as not to expose the upper surface and side surface of the laminate array.