X-ray ion forming device combined with process chamber

Abstract

One embodiment may provide an X-ray ion-forming device coupled to a process chamber, wherein the ion source is connected to the internal space of a vacuum process chamber that provides a space for performing a specific process on an object, and the ion source includes a source body that supplies voltage to an output unit and an output unit that outputs X-rays to the process chamber, and the output unit includes an anode electrode, a cathode electrode, and an output case.

Description

Technology Field

[0001] This embodiment relates to an X-ray ion forming device combined with a process chamber capable of removing static electricity by forming ions in the internal space of the process chamber. Background Technology

[0002] Static electricity is generated by various causes, including friction and peeling. Such static electricity can occur in diverse environments, regardless of whether the material is a solid, liquid, insulator, or conductor. While the generated static electricity consists of equal amounts of positive and negative charges, in actual processes, static electricity of only one polarity often appears due to the difference in capacitance between the two.

[0003] In the manufacturing process of electronic devices such as memory devices, flat panel displays, and integrated circuits, foreign substances may adhere to the electronic devices due to the generation of static electricity, or patterns may be damaged by electrostatic discharge.

[0004] Various methods are being implemented to suppress or eliminate such static electricity generation, and methods to eliminate static electricity using ionization devices are mainly being proposed. Ionization devices generate positive and negative ions and release them into the air using a fan or compressed air, and the released ions neutralize the charged particles by providing ion particles opposite to the charged particles of the substrate where static electricity is generated, thereby eliminating static electricity.

[0005] However, conventional ionization devices for electrostatic discharge release ions into the air in a non-vacuum environment, which presents a problem in that they are difficult to apply in vacuum environments where high cleanliness must be maintained. Conventional electrostatic discharge processes involve two steps: forming a thin film of an electronic device in a vacuum environment, and then removing static electricity through a separate discharge process in a non-vacuum environment.

[0006] Conventional electrostatic discharge devices have limitations in preventing device damage caused by static electricity because the thin film process and the static discharge process are separated, making it impossible to immediately remove static electricity generated during thin film formation.

[0007] In addition, conventional electrostatic discharge devices directly irradiate the substrate with ion particles and ion light generated during the ion beam generation process, thereby causing damage to the substrate. The problem to be solved

[0008] Against this backdrop, one objective of the present embodiment is to provide a technology capable of improving the aforementioned problem.

[0009] Another objective of the present embodiment is to provide a technology that minimizes the influence of the electrostatic removal device on a specific process performed within the process chamber by minimizing the influence on the process conditions of the process chamber.

[0010] Another objective of the present embodiment is to provide a technology that allows for the addition of a device for electrostatic removal without replacing the existing process chamber by minimizing modifications to the process chamber. means of solving the problem

[0011] To achieve the aforementioned objective, one embodiment may provide an X-ray ion-forming device coupled to a process chamber, wherein the ion source is connected to the internal space of a vacuum process chamber that provides a space for performing a specific process on an object, and the ion source includes a source body that supplies voltage to an output unit and an output unit that outputs X-rays to the process chamber, and the output unit includes an anode electrode, a cathode electrode, and an output case.

[0012] The process chamber may include a service port for connecting to utilities and auxiliary devices, and a view port for visually observing the interior of the process chamber.

[0013] An electron beam emitted from the cathode electrode collides with the anode electrode to generate X-rays, and ions can be formed in the internal space of the process chamber through the X-rays.

[0014] The output section further includes an opening that is open on the side facing a service port or a view port, and the process chamber and the output section may be connected through the opening.

[0015] The process chamber and the output portion are connected through a connecting portion provided at the edge of the opening, and the connecting portion may include at least one selected from the group consisting of a service port connecting device, a view port connecting device, a case connecting portion, a connecting member, and a sealing member.

[0016] The internal space of the process chamber and the output section is 10 -3 ~ 10 -8 It can be a vacuum of torr.

[0017] The above anode electrode and the above cathode electrode may contain carbon nanotubes (CNT).

[0018] The ion source comprising the anode electrode and cathode electrode containing the carbon nanotubes described above can operate at 100°C or lower.

[0019] The above ion source may include a beam guide that is provided in the direction of the internal space of the process chamber to control the output direction of the X-ray.

[0020] The beam guide may include a shielding part capable of selectively emitting or blocking X-rays formed by the ion source into the internal space of the process chamber.

[0021] The beam guide may be provided at the edge of the opening of the service port or the view port.

[0022] The shielding unit may include a control unit capable of controlling the amount of ion emission in real time.

[0023] The beam guide may further include a grid portion capable of adjusting the output direction of X-rays so that X-rays can be irradiated in the direction in which the object is located. Effects of the invention

[0024] As explained above, according to the present embodiment, there is an effect of improving the aforementioned problem.

[0025] In addition, according to the present embodiment, the influence on the process conditions of the process chamber can be minimized, thereby minimizing the effect of the electrostatic removal device on a specific process performed within the process chamber.

[0026] Furthermore, according to the present embodiment, modifications to the process chamber can be minimized so that a device for electrostatic removal can be added without replacing the existing process chamber.

[0027] The technical problems to be solved in this document are not limited to those mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art to which this invention belongs from the description below. Brief explanation of the drawing

[0028] FIG. 1 is a drawing showing a process chamber that provides a space for performing a specific process on an object in a vacuum state. FIG. 2 is a diagram showing an ion-forming device according to one embodiment being coupled to a process chamber. Figure 3 is a diagram of the configuration of an ion source that generates X-rays. Figure 4 is an enlarged view of an ion source coupled to a process chamber. Figure 5 is a configuration diagram of a beam guide including a shielding part capable of controlling the output amount of X-rays. Figure 6 is a diagram of a beam guide including a grating section capable of controlling the output direction of X-rays. Specific details for implementing the invention

[0029] Hereinafter, some embodiments of the present invention will be described in detail with reference to the exemplary drawings. It should be noted that in assigning reference numerals to the components of each drawing, the same components are given the same reference numeral whenever possible, even if they are shown in different drawings. Furthermore, in describing the present invention, if it is determined that a detailed description of related known components or functions could obscure the essence of the invention, such detailed description is omitted.

[0030] In addition, terms such as first, second, A, B, (a), (b), etc., may be used when describing the components of the present invention. These terms are intended only to distinguish the components from other components, and the essence, order, or sequence of the components is not limited by the terms. Where it is stated that a component is "connected," "combined," or "connected" to another component, it should be understood that the component may be directly connected or connected to the other component, but that another component may also be "connected," "combined," or "connected" between each component.

[0031] FIG. 1 is a drawing showing a process chamber that provides a space for performing a specific process on an object in a vacuum state.

[0032] Referring to FIG. 1, a specific process can be performed on an object (1) in a high vacuum state within the process chamber (10).

[0033] In the field of process technology, 10 -3 ~ 10 -8 The pressure range of Torr is understood as a high vacuum state. In a high vacuum state, most air molecules are removed, and collisions between ordinary gases and gas molecules may rarely occur. In addition to the high vacuum state, it can be classified into medium vacuum and low vacuum states, with the medium vacuum state generally ranging from 1 to 10 -3It is understood that the pressure range of Torr corresponds to this, and the low vacuum state can be understood as a pressure range of 1 Torr at atmospheric pressure. The medium vacuum state is understood to be suitable for evaporation, dryers, and some coating processes, and the low vacuum state is known for commercial uses such as vacuum cleaners and vacuum packaging machines.

[0034] It is known that various processes in the field of process technology are carried out under high vacuum conditions.

[0035] A representative example is high vacuum deposition technology. High vacuum deposition technology is a process in which a material is heated to a high temperature to become a vapor state, then cooled to deposit it on the surface of an object (1). This process can be used as a method to transfer a material from one surface to the surface of an object (1), and because it is performed in a high vacuum state, it is also called high vacuum deposition. High vacuum deposition technology can be used in semiconductor manufacturing, optical coating, and manufacturing processes for various sensors and electronic devices, and can be used to extremely purify materials or obtain very thin coatings. Well-known high vacuum deposition methods include Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). PVD may involve a process of evaporating a material by a physical method and transporting the vapor over the object (1), while CVD may involve a process of turning the material to be deposited into a gaseous form, placing the gas over the object (1), and then causing a chemical reaction for deposition.

[0036] Additionally, an organic deposition process for the target object (1) can be performed inside the process chamber (10). In the case of an organic deposition process, the process generally tends to be carried out in a high vacuum state. In an organic deposition process, it is necessary to maintain a constant purity of the organic material, and since interactions with other gases are minimized in a high vacuum state, it may be more advantageous to maintain the purity of the organic material. Furthermore, in a high vacuum state, a high-quality coating with a desired thickness and structure can be produced, and this characteristic can also be advantageous in the organic deposition process. In addition, the fact that molecules can move in a straight line from the source to the target object (1) in a unidirectional manner in a high vacuum state, and that there are fewer collisions or reactions with other gases in a high vacuum state, resulting in high deposition efficiency, are also reasons why a process in a high vacuum state is used for the organic deposition process.

[0037] A device for maintaining a high vacuum state may be connected to or included in the process chamber (10). For example, a vacuum pump may be connected to the process chamber (10) to create and maintain a vacuum state by removing gas from within the process chamber (10), and a vacuum gauge may be included to continuously monitor and measure the pressure within the process chamber (10).

[0038] For a specific process within the process chamber (10), a plurality of ports (20, 40) may be formed in the process chamber (10).

[0039] A process port (40) may be formed in the process chamber (10). The process port (40) may be a connection point directly related to a specific process performed in the process chamber (10). Gas, liquid, or material required for a specific process may be delivered into the process chamber (10) through the process port (40). Alternatively, a device for measuring or analyzing the state inside the process chamber (10) in relation to the performance of a specific process may be connected to the process port (40). The process port (40) may be custom-designed to meet the requirements of a specific process and is likely to be limited to other uses. The process port (40) may be, for example, a port for supplying reaction gas in chemical vapor deposition, a port for supplying target material in physical vapor deposition, etc.

[0040] A service port (20) may be formed in the process chamber (10). The service port (20) may be a connection point related to the maintenance and management of the process chamber (10). The service port (20) may be used to connect utilities and auxiliary devices such as a vacuum pump, a cooling system, a power supply, a vacuum gauge, etc.

[0041] A viewport (30) may be formed in the process chamber (10). A manager can directly observe the process conditions inside the process chamber (10) visually through the viewport (30). Alternatively, a management device (e.g., a camera or other optical device) may be connected to the viewport (30) so that the manager can remotely monitor the process conditions inside the process chamber (10). The viewport (30) may be made of materials such as reinforced glass, ceramic, or special plastic. These materials can withstand extreme environments such as high vacuum and high temperature and may have high optical transparency. Additionally, the viewport (30) may have a sealing structure to prevent vacuum leakage so as not to affect the high vacuum state inside the process chamber (10).

[0042] A specific process may be carried out within a process chamber (10) containing such structures and devices, at which time, static electricity may be formed on the object (1).

[0043] Static electricity formed on the object (1) can have various causes. For example, static electricity may be formed due to friction between the object (1) and another object, static electricity may be formed on the object (1) due to an unbalanced charge distribution caused by deposition or etching processes in a specific process step, or static electricity may be formed and further accumulated due to the obstruction of charge movement by an insulating layer placed on the object (1).

[0044] Such static electricity may form a sufficiently high voltage, which may damage the fine structure of the object (1), and may cause defects in the process by generating a force that attracts or pushes fine particles in the process chamber (10) to the object (1), and may also affect the electrical characteristics of the object (1) and degrade the overall performance of the process device.

[0045] To solve these problems, embodiments of the present specification provide an ion-forming device for removing static electricity within a process chamber (10), particularly static electricity formed on an object (1). This ion-forming device minimizes the influence on the process conditions of the process chamber (10), thereby minimizing the influence of the ion-forming device on a specific process performed within the process chamber (10), and minimizes modifications to the process chamber (10), allowing the ion-forming device to be added without replacing the existing process chamber (10).

[0046] The ion forming device can form ions in the internal space of the process chamber (10) by utilizing the high vacuum state of the process chamber (10) without supplying additional separate process gas.

[0047] Specifically, an ion-forming device according to one embodiment includes an ion source, and an electric field may be formed between an anode electrode and a cathode electrode disposed inside the ion source. An electron beam may be emitted from the cathode electrode toward the anode electrode and collide with an electron beam receiving portion provided in the anode electrode to generate X-rays. The generated X-rays are output into the internal space of the process chamber (10), and the X-rays collide with gas molecules present in the internal space of the process chamber (10) and ionize these gas molecules to form a plurality of ions. The formed plurality of ions may move toward the target object (1) and remove static electricity formed on the target object (1).

[0048] Since this ion-forming device does not supply additional process gas and does not include a separate vacuum device, it can minimize the impact on the process conditions of the process chamber (10). Furthermore, since this ion-forming device does not supply additional process gas and does not include a separate vacuum device, it can simplify the configuration and minimize modifications to the process chamber (10).

[0049] The ion source can be coupled to a service port (20) or a view port (30) to minimize modifications to the process chamber (10).

[0050] FIG. 2 is a diagram showing an ion-forming device according to one embodiment being coupled to a process chamber.

[0051] Referring to FIG. 2, the ion forming device (200) may include an ion source (210) and a service port coupling device (220).

[0052] The service port coupling device (220) may be a mechanism that supports the ion source (210) being coupled to the service port (20). In some embodiments, the service port coupling device (220) may not be separately provided, and a part of the ion source (210) may perform the function of the service port coupling device (220).

[0053] In addition, when the ion forming device (200) is coupled to the view port (30), a view port coupling device (not shown) that can replace the function of the service port coupling device (220) may be provided.

[0054] The ion source (210) may include a beam guide (213) for controlling the output direction of the X-ray, and may further include a source body (211) and an output unit (212).

[0055] A beam guide (213) may be installed to control the output direction of X-rays output from the output unit (212). An ion forming device (200) according to one embodiment may be installed in a service port (20) or a view port (30), and the service port (20) and the view port (30) may be provided at a different location from the object (1) on which a specific process is performed within the process chamber (10). In this case, it may be difficult for X-rays output from the ion forming device (200) to reach the object (1), so static electricity formed on the object (1) may not be sufficiently removed.

[0056] Accordingly, the ion source (210) may include a beam guide (213) so that X-rays output from the output unit (212) are output in the direction where the object (1) is located, thereby effectively removing static electricity formed on the object (1).

[0057] The source body (211) may include a power supply. The power supply can supply a specific voltage to an electrode placed at the output section (212). Here, the specific voltage may be a high voltage, or a voltage corresponding to hundreds to thousands of volts. The power supply can receive a high voltage from the outside through a cable and supply it to the electrode, or it can receive a voltage having a voltage level lower than the high voltage from the outside, raise the voltage level through power conversion, and then supply it to the electrode.

[0058] The source body (211) may be surrounded by a metal case to prevent electromagnetic waves generated from the power supply, etc. from propagating to the outside, including the process chamber (10).

[0059] The output section (212) may have the side facing the service port (20) open, while the other side may be closed. The output section (212) may be in communication with the internal space of the process chamber (10) in a high vacuum state through the service port (20), and may not be in communication with any other space. For example, the output section (212) may not be in communication with the source body (211), nor may it be in direct communication with the external space of the process chamber (10).

[0060] When the internal space of the process chamber (10) is maintained in a high vacuum state (e.g., 10^-3 to 10^-8 torr), the internal atmosphere of the output unit (212) connected thereto can also be maintained in a high vacuum state. Therefore, since the ion forming device according to one embodiment does not supply additional process gas and does not include a separate vacuum device, the influence on the process conditions of the process chamber (10) can be minimized. Furthermore, since the ion forming device according to one embodiment does not supply additional process gas and does not include a separate vacuum device, the configurations can be simplified, thereby minimizing modifications to the process chamber (10).

[0061] When the source body (211) provides a specific voltage to the electrode of the output unit (212) in such a high vacuum atmosphere, ions can be formed in the internal space of the process chamber (10) in a high vacuum state.

[0062] The ions formed in the internal space of the process chamber (10) can neutralize the object (1) while in contact with the object (1).

[0063] FIG. 3 is a diagram showing the configuration of an ion source according to one embodiment, and FIG. 4 is an enlarged view of an ion source coupled to a process chamber.

[0064] Referring to FIGS. 3 and 4, the ion source (210) may include a beam guide (213) for controlling the output direction of X-rays, and may further include a source body (211) and an output unit (212).

[0065] The output section (212) may include an anode electrode (310), a cathode electrode (320), an output case (not shown), etc.

[0066] The output case (not shown) may have a structure in which the side facing the service port (20) is open and the other side is closed. The output case (not shown) may form a space inside in which an anode electrode (310) and a cathode electrode (320) are seated, and may be formed such that one side is open and the other side is closed so that this space communicates with the internal space of a process chamber in a high vacuum state.

[0067] The output case (not shown) may include a case joint (331) formed parallel to the process chamber frame (11), and such case joint (331) may be tightly coupled to the process chamber frame (11) so that the interior of the output case (not shown) cannot be directly connected to the external space of the process chamber. The case joint (331) and the process chamber frame (11) may be tightly coupled through a coupling member (332) such as a bolt, and a sealing member such as an O-ring may be further disposed on the coupling surface.

[0068] An anode electrode (310) and a cathode electrode (320) can be seated in the space formed inside the output case (not shown), and an electron beam gate (322) can be provided so that an electron beam (214) emitted from the cathode electrode (320) can effectively reach the anode electrode (310).

[0069] When voltage is supplied from the power supply of the source body (211) to the output section (212), an electron beam (214) can be emitted from the cathode electrode (320). The emitted electron beam (214) is moved toward the anode electrode (310) by the electron beam gate (322) and collides with the anode electrode (310), thereby generating X-rays (215). The X-rays (215) are output into the internal space of the process chamber (10) and collide with gas molecules in a high vacuum state, ionizing these gas molecules to form a number of ions. The static electricity formed on the object (1) can be removed by the number of ions formed.

[0070] Figure 5 is a configuration diagram of a beam guide including a shielding part capable of controlling the output amount of X-rays.

[0071] Referring to FIG. 5, the beam guide (213) may include a shielding part (216) capable of selectively emitting or blocking X-rays (215) formed by the ion source (210) into the internal space of the process chamber (10). By controlling the output amount of X-rays (215) through the shielding part (216), static electricity can be removed without damaging the object (1).

[0072] The shielding unit (216) can be controlled through the control unit (218) to adjust the amount of X-rays (215) output. The control unit (218) detects detection signals (F) generated from the pressure detection unit, flow detection unit, temperature detection unit, etc. c , P c , T c A receiver that receives (etc.), and a control signal (M c It may include an operating unit that controls the shielding device (216) by outputting ).

[0073] Accordingly, the shielding part (216) can detect pressure, flow rate, temperature, etc. inside the beam guide (213) in real time and adjust the output amount of X-rays (215) output from the beam guide (213).

[0074] Figure 6 is a diagram of a beam guide including a grating section capable of controlling the output direction of X-rays.

[0075] Referring to FIG. 6, the beam guide (213) may further include a grid portion (217) capable of adjusting the output direction of the X-ray (215) so that the X-ray (215) can be irradiated in the direction in which the object (1) is located.

[0076] As described above, an ion forming device (200) according to one embodiment may be installed in a service port (20) or a view port (30), and the service port (20) and the view port (30) may be provided at a different location from the object (1) on which a specific process is performed within the process chamber (10). In this case, it may be difficult for the X-rays output from the ion forming device (200) to reach the object (1), so that the static electricity formed on the object (1) may not be sufficiently removed. Therefore, in this embodiment, a grid portion (217) is placed inside the beam guide (213) so that the X-rays (215) are output in the direction where the object (1) is located, thereby effectively removing the static electricity formed on the object (1).

[0077] X-rays (215) pass through the grid section (217) and are allowed to travel in a straight line toward the object (1), while other X-rays may not pass through the grid section (217). Through this, X-rays (215) can effectively reach the object (1) and remove static electricity. Specifically, the grid section (217) is provided in a mesh shape and has multiple holes formed inside, so that some of the output X-rays (215) have their output direction refracted by the inner walls of the holes, thereby controlling the output direction of the X-rays (215).

[0078] The shielding part (216) and the grid part (217) that can be provided inside the beam guide (213) may be installed alone or together.

[0079] Terms such as "include," "compose," or "have" as described above, unless specifically stated otherwise, mean that the relevant component may be inherent; therefore, they should be interpreted as allowing for the inclusion of additional components rather than excluding them. All terms, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains, unless otherwise defined. Commonly used terms, such as those defined in advance, should be interpreted in accordance with their meaning in the context of the relevant technology and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0080] The foregoing description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention. Explanation of the symbols

[0081] 1: Object 10: Process Chamber 11: Process chamber frame 20: Service port 30: Viewport 40: Process Port 200: Ion forming device 210: Ion source 211: Source body 212: Output section 213: Beam Guide 214: Electron beam 215: X-ray 216: Shielding section 217: Grid section 218: Control unit 220: Viewport coupling device 310: Anode electrode 320: Cathode electrode 321: Carbon nanotubes 322: Electron Beam Gate 331: Case joint 332: Connecting member

Claims

Claim 1 The device includes an ion source connected to the internal space of a vacuum process chamber that provides a space for performing a specific process on an object, wherein the ion source includes a source body located on one side of an output unit that supplies a voltage to the anode electrode of the output unit for generating ions, and an output unit that outputs X-rays to the process chamber, wherein the output unit includes an anode electrode, a cathode electrode, and an output case, wherein the output unit is connected to one port of the chamber and connected to the internal space of the chamber in a vacuum state so as to utilize the atmosphere of the internal space of the chamber without introducing a separate process gas, wherein the ion source includes a beam guide provided toward the internal space of the process chamber to control the output direction of the X-rays, wherein the beam guide includes a shielding unit capable of selectively emitting or blocking X-rays formed by the ion source into the internal space of the process chamber, wherein the shielding unit is controlled through a control unit to control the amount of X-rays output, and the control unit includes a receiver unit that receives detection signals generated from a pressure sensing unit, a flow rate sensing unit, and a temperature sensing unit, and outputs a control signal to control the shielding unit X-ray ion forming device coupled with a process chamber, comprising a controlling operating part. Claim 2 An X-ray ion forming device coupled with a process chamber, wherein the process chamber comprises a service port for connecting to a utility and auxiliary device and a view port for visually observing the interior of the process chamber. Claim 3 An X-ray ion forming device coupled with a process chamber, wherein, in claim 1, an electron beam emitted from the cathode electrode collides with the anode electrode to generate X-rays, and ions are formed in the internal space of the process chamber through the X-rays. Claim 4 An X-ray ion forming device coupled with a process chamber, wherein the output portion further comprises an opening that is open on the side facing a service port or a view port, and the process chamber and the output portion are connected through the opening. Claim 5 An X-ray ion forming device coupled to a process chamber according to claim 4, wherein the process chamber and the output portion are coupled through a coupling portion provided at the edge of the opening, and the coupling portion comprises at least one selected from the group consisting of a service port coupling device, a view port coupling device, a case coupling portion, a coupling member, and a sealing member. Claim 6 In claim 1, the internal space of the process chamber and the output unit is 10 -3 ~ 10 -8 An X-ray ion forming device coupled with a process chamber in a vacuum state of torr. Claim 7 In claim 1, the X-ray ion forming device coupled with a process chamber, wherein the anode electrode and the cathode electrode contain carbon nanotubes (CNT). Claim 8 In claim 7, the ion source comprising an anode electrode and a cathode electrode containing the carbon nanotube is an X-ray ion forming device coupled with a process chamber operating at 100°C or lower. Claim 9 delete Claim 10 delete Claim 11 In claim 1, the beam guide is an X-ray ion forming device coupled with a process chamber, which is provided at the edge of the opening of a service port or a view port. Claim 12 In claim 1, the shielding part comprises a control part capable of controlling the amount of ion emitted in real time, and is an X-ray ion forming device coupled with a process chamber. Claim 13 An X-ray ion forming device coupled with a process chamber, wherein the beam guide is provided in a mesh shape and has a plurality of holes formed inside, so that the output direction of the output X-rays is refracted by the inner wall of the holes to control the output direction of the X-rays.

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