Semiconductor substrate heating device, semiconductor device and temperature control method

Abstract

The present invention provides a semiconductor substrate heating device comprising a heating chamber, a main heating unit, a compensation control unit, and at least one temperature compensation unit. A compensation control unit and a plurality of temperature compensation units are installed inside the heating chamber of the semiconductor substrate heating device, and the upper surface of the compensation control unit is installed corresponding to the bottom surface of the heating plate. A plurality of temperature compensation units are installed between the heating plate and the compensation control unit and are communication-connected to the compensation control unit, and a plurality of temperature control compensation areas on the bottom surface of the heating plate are installed in a one-to-one correspondence. This prevents complex lead line design and, by performing temperature compensation adjustment for the temperature control compensation areas under the control of the compensation control unit, the temperature uniformity of the semiconductor substrate can be effectively controlled with minimal manufacturing and maintenance costs.

Description

Technology Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor substrate heating device, a semiconductor device, and a temperature control method. Background Technology

[0002] Currently, substrate baking equipment must be used frequently in the semiconductor substrate processing process. In the heating baking process, the temperature uniformity of the substrate is very important for achieving process indicators. Current prior art, such as the Chinese patent application with publication number CN103792974A, improves the temperature uniformity of the heating plate by using technical solutions that optimize the heating circuit of the heater and appropriately increase the number of heater partitions.

[0003] However, as the number of heater partitions increases, the heater development cycle and R&D expenditure increase significantly, leading to a substantial rise in the cost of the temperature control section. Furthermore, since more space is required for hardware installation and the demands for control during the heater manufacturing process become stricter, a decrease in heater yield easily occurs, which ultimately translates into increased heater costs.

[0004] This method of optimizing the heating circuit by adding partitions requires more lead wire designs, making the layout more complex and increasing the difficulty of designing the structure surrounding the heater.

[0005] Therefore, it is necessary to develop a new type of semiconductor substrate heating device to solve the aforementioned problems existing in conventional technology.

[0006] The objective of the present invention is to provide a semiconductor substrate heating device, a semiconductor device including said semiconductor substrate heating device, and a method for controlling the temperature of said semiconductor device, which can effectively control the temperature uniformity of a semiconductor substrate with the lowest possible manufacturing and maintenance costs.

[0007] To achieve the above objective, the semiconductor substrate heating device of the present invention is,

[0008] Heating chamber;

[0009] A main heating unit including a heating plate installed inside the heating chamber, wherein the bottom surface of the heating plate includes at least one temperature control compensation area;

[0010] A compensation control unit installed inside the heating chamber, with its upper surface adjacent to the bottom surface of the heating plate; and

[0011] It includes at least one temperature compensation unit installed between the heating plate and the compensation control unit and communication-connected to the compensation control unit;

[0012] The above temperature compensation unit is installed corresponding to the temperature control compensation area and performs temperature compensation adjustment for the temperature control compensation area under the control of the compensation control unit.

[0013] The beneficial effects of the semiconductor substrate heating device of the present invention are as follows. A compensation control unit and a plurality of temperature compensation units are installed inside the heating chamber of the semiconductor substrate heating device, and the upper surface of the compensation control unit is adjacent to the bottom surface of the heating plate. Since a plurality of temperature compensation units installed between the heating plate and the compensation control unit and connected to the compensation control unit via communication, and a plurality of temperature control compensation areas installed on the bottom surface of the heating plate, are installed in a one-to-one correspondence, complex lead line design is prevented, and by performing temperature compensation adjustment for the temperature control compensation areas under the control of the compensation control unit, the temperature uniformity of the semiconductor substrate can be effectively controlled with minimal manufacturing and maintenance costs.

[0014] Preferably, the temperature compensation unit includes an auxiliary temperature controller that is communicationally connected to the compensation control unit, and the distance between the uppermost part of the auxiliary temperature controller and the temperature control compensation area corresponding thereto is greater than or equal to 0.

[0015] More preferably, the auxiliary temperature control unit includes a heat-conducting element or a cooling element.

[0016] Preferably, the temperature compensation unit further includes a fixed portion connected to the auxiliary temperature control unit, and the auxiliary temperature control unit is fixed to the corresponding temperature control compensation area through the fixed portion.

[0017] Preferably, the semiconductor substrate heating device further includes a separator installed between the main heating unit and the compensation control unit, and the temperature compensation unit is installed on the separator.

[0018] More preferably, the constituent material of the separator includes an insulating material.

[0019] More preferably, the number of the separator plates is at least two, and the temperature compensation unit is installed by being caught between adjacent separator plates.

[0020] Preferably, the temperature compensation unit further comprises a support member installed at the bottom of the auxiliary temperature control unit and an elastic member installed inside the support member, wherein the support member is installed on the separator plate, and the elastic member applies a force directed toward the direction of the temperature control compensation area corresponding to the auxiliary temperature control unit under the action of the support member, thereby adjusting the distance between the uppermost part of the auxiliary temperature control unit and the temperature control compensation area corresponding to the auxiliary temperature control unit.

[0021] More preferably, the support member includes an inner support member that supports the auxiliary temperature control member and an outer support member that surrounds the inner support member, and there is a gap between the outer wall of the inner support member and the outer wall of the outer support member.

[0022] More preferably, one end of the elastic member is installed inside the outer support member, and the other end is in contact with the bottom of the inner support member.

[0023] More preferably, the elastic member surrounds the bottom portion of the internal support and contacts the separator plate.

[0024] More preferably, a lead hole through which a lead passes is installed inside the internal support member.

[0025] More preferably, a lead hole through which a lead passes is installed inside the outer support.

[0026] More preferably, the main heating unit further includes a main control unit for performing temperature control, and the compensation control unit is communicationally connected to the main control unit to perform temperature compensation control under the control of the main control unit.

[0027] More preferably, the upper surface of the heating plate includes a substrate contact area, and the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any one area within the bottom surface control area.

[0028] The semiconductor device of the present invention includes the semiconductor substrate heating device.

[0029] The above semiconductor device further includes a temperature calibration unit, and the main heating unit further includes a main control unit, the temperature calibration unit is in contact with the heating surface of the heating plate of the semiconductor substrate heating device to acquire and provide feedback on temperature calibration information, and the main control unit is installed outside the heating chamber and is communication-connected to at least one of the compensation control unit and the temperature calibration unit.

[0030] The temperature control method of the semiconductor device of the present invention is,

[0031] Step S0 of providing a semiconductor device comprising a heating chamber, a main heating unit, a compensation control unit, and at least one temperature compensation unit; and

[0032] The method includes step S1 of driving at least one temperature compensation unit through the compensation control unit to perform temperature compensation control for the heating plate of the main heating unit. Brief explanation of the drawing

[0033] FIG. 1 is a schematic diagram of the partial structure of a semiconductor substrate heating device of an embodiment of the present invention. FIG. 2 is a schematic diagram of a partial structure of another semiconductor substrate heating device of the present invention. Figure 3 is a schematic diagram of the enlarged structure of part A shown in Figure 2. Figure 4 is a schematic diagram of the structure of a temperature compensation unit of an embodiment of the present invention. Figure 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4. Figure 6 is a schematic diagram of the internal structure of another temperature compensation unit of the present invention. Figure 7 is a schematic diagram of the operating state of the temperature compensation unit shown in Figure 6 inside the heating chamber. FIG. 8 is a schematic diagram of the operating state of a semiconductor device according to an embodiment of the present invention. Specific details for implementing the invention

[0034] To clarify the purpose, technical solution, and advantages of the embodiments of the present invention, the technical solution of the embodiments of the present invention will be described clearly and completely below. Of course, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without striving to create an inventive step are all within the scope of protection of the present invention. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as generally understood by a person skilled in the art. Similar words such as “included” used in this specification mean that the element or object appearing before such word includes the element or object listed after such word and equivalents thereof, and does not exclude other elements or objects.

[0035] An embodiment of the present invention provides a semiconductor substrate heating device capable of improving the uniformity of temperature control for a semiconductor substrate with the lowest possible manufacturing and maintenance costs.

[0036] A semiconductor substrate heating device of an embodiment of the present invention includes a heating chamber, a main heating unit, a compensation control unit, and at least one temperature compensation unit.

[0037] In some embodiments, the main heating unit includes a main control unit, a heating plate, and a main heating unit installed on the heating plate, and the main control unit is communicationally connected to the main heating unit. The main control unit is intended to perform temperature control. The main control unit performs temperature control for the main heating unit, and heat is generated on the heating surface of the heating plate through the main heating unit, a semiconductor substrate is positioned toward the heating surface of the heating plate, and the heating surface of the heating plate transfers heat to the semiconductor substrate.

[0038] Specifically, the structural relationship and specific implementation form between the main control unit, the heating plate, and the main heating unit are general technical means of a person skilled in the art and are not described herein.

[0039] FIG. 1 is a schematic diagram of the partial structure of a semiconductor substrate heating device of an embodiment of the present invention.

[0040] Referring to FIG. 1, in a semiconductor substrate heating device (1), a heating plate (11), at least one temperature compensation unit (12), and a compensation control unit (13) are installed inside a heating chamber (not shown).

[0041] In some embodiments, the bottom surface of the heating plate (11) includes at least one temperature control compensation area.

[0042] In some embodiments, the upper surface of the heating plate includes a substrate contact area, and the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any one area within the bottom surface control area.

[0043] The specific location range of the temperature control compensation area and the distance between adjacent temperature control compensation areas are jointly determined by the structural performance of the heating plate (11) itself, process demand and mounting conditions.

[0044] In some specific embodiments, a plurality of the temperature control compensation regions are matrix-wise distributed with respect to the center of the floor surface control region. Specific matrix distribution types include, but are not limited to, circular matrices and rectangular matrices.

[0045] In some embodiments, referring to FIG. 1, the upper surface of the compensation control unit (13) is adjacent to the bottom surface of the heating plate (11), that is, a cavity area is formed by the upper surface of the compensation control unit (13) and the bottom surface of the heating plate (11). At least one temperature compensation unit (12) is installed in the area between the heating plate (11) and the compensation control unit (13) and is communication-connected to the compensation control unit (13).

[0046] In some embodiments, the temperature compensation unit (12) is installed corresponding to the temperature control compensation area and performs temperature compensation adjustment for the temperature control compensation area under the control of the compensation control unit (13).

[0047] In some embodiments, the compensation control unit (13) is communicationally connected to the main control unit of the main heating unit and performs the temperature compensation control under the control of the main control unit.

[0048] In some embodiments, the main control unit is installed outside the heating chamber, and at least one temperature compensation unit (12) is installed in the area between the heating plate (11) and the compensation control unit (13) and is communication-connected to the compensation control unit (13), thereby concentrating the wiring inside the heating chamber between the heating plate (11) and the compensation control unit (13), thus preventing complex lead wire design and making it easy to disassemble, assemble, and maintain the semiconductor substrate heating device.

[0049] In addition, by electrically connecting the compensation control unit (13) and the main control unit through a single communication lead, temperature compensation control for the heating plate (11) can be implemented through control of the compensation control unit (13), and furthermore, by preventing complex lead wire design, the disassembly, assembly, and maintenance of the semiconductor substrate heating device can be made easy.

[0050] In some specific embodiments, the compensation control unit (13) is a circuit board, and a control circuit is installed on the surface of the circuit board to implement control for at least one temperature compensation unit (12). The specific implementation form of the control may be synchronous control or mutually independent control.

[0051] In some specific embodiments, the compensation control unit (13) includes a printed circuit board (PCB) and a control panel composed of functional elements installed on the PCB board.

[0052] In some specific embodiments, the compensation control unit (13) further includes an insulating structure that packages the control panel, and the insulating structure may cover at least one surface of the control panel, such as the upper surface of the control unit facing the bottom surface of the heating plate (11), and does not affect the electrical connection between the compensation control unit (13) and the temperature compensation unit (12), thereby preventing the compensation control unit (13) from being affected by heat.

[0053] In some specific embodiments, the main control unit is a host computer.

[0054] In some embodiments, referring to FIG. 1, the temperature compensation unit (12) includes an auxiliary temperature control unit (121) that is communicationally connected to the compensation control unit (13).

[0055] In some embodiments, the auxiliary temperature control unit (121) includes a heat-conducting element or a cooling element and serves to heat or cool a temperature control compensation area corresponding to the bottom surface of the heating plate (11).

[0056] In some embodiments, the auxiliary temperature control unit (121) and the heating plate (11) interact in a contact type, that is, the distance between the uppermost part of the auxiliary temperature control unit (121) and the corresponding temperature control compensation area (not shown) is equal to 0, so the uppermost part of the auxiliary temperature control unit (121) is bonded to the temperature control compensation area (not shown).

[0057] In some embodiments, the temperature compensation unit (12) further includes a fixed portion connected to the auxiliary temperature control unit (121), and the auxiliary temperature control unit (121) is fixed to the corresponding temperature control compensation area through the fixed portion.

[0058] In some specific embodiments, the heat-conducting element of the auxiliary temperature control unit (121) is a ceramic heating sheet.

[0059] In some specific embodiments, the cooling element of the auxiliary temperature control unit (121) is a semiconductor cooling sheet.

[0060] In some specific embodiments, the fixing part is a heat-resistant adhesive.

[0061] In some embodiments, the auxiliary temperature control unit (121) is a small gas supply assembly.

[0062] In some embodiments, the small gas supply assembly is configured to spray clean cooling gas toward the corresponding temperature control compensation area under the control of the compensation control unit (13).

[0063] In some embodiments, the small gas supply assembly includes a gas circulation pipe installed corresponding to each of the temperature control compensation areas, and the small gas supply assembly is configured to allow clean cooling gas to move through the gas circulation pipe under the control of the compensation control unit (13) so that the temperature of the corresponding temperature control compensation area is lowered.

[0064] In some embodiments, the auxiliary temperature control unit (121) is a small liquid supply assembly.

[0065] In some embodiments, the small liquid supply assembly includes a liquid circulation pipe installed corresponding to each of the temperature control compensation areas, and the small liquid supply assembly is configured to allow a heating liquid to move and circulate in the liquid circulation pipe under the control of the compensation control unit (13) so that the temperature of the corresponding temperature control compensation area is raised.

[0066] FIG. 2 is a schematic diagram of a partial structure of another semiconductor substrate heating device of an embodiment of the present invention. FIG. 3 is a schematic diagram of an enlarged structure of part A shown in FIG. 2.

[0067] In some embodiments, referring to FIGS. 2 and 3, the temperature compensation unit (12) is suspended between the heating plate (11) and the compensation control unit (13) so that the distance between the uppermost part of the auxiliary temperature control unit (121) and the corresponding temperature control compensation area is greater than 0. The auxiliary temperature control unit (121) and the heating plate (11) interact in a non-contact manner.

[0068] In some specific embodiments, the heating element of the auxiliary temperature control unit (121) is an LED lamp or a halogen lamp.

[0069] In some embodiments, the semiconductor substrate heating device further includes a separator installed inside the heating chamber. Referring to FIGS. 2 and 3, the separator (21) is installed between the heating plate (11) and the compensation control unit (13), and the temperature compensation unit (12) is installed on the separator (21).

[0070] In some embodiments, the constituent material of the separator plate (21) includes an insulating material, which is advantageous for maintaining the heat conduction effect of the heating plate (11).

[0071] In some embodiments, the number of separator plates (21) is at least two, and the temperature compensation unit (12) is installed by being caught between adjacent separator plates (21). Referring to FIG. 3, the separator plates (21) include adjacent first separator plates (31) and second separator plates (32), and the temperature compensation unit (12) is installed by being caught between the first separator plates (31) and the second separator plates (32).

[0072] FIG. 4 is a schematic diagram of the structure of a temperature compensation unit of an embodiment of the present invention. FIG. 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in FIG. 4.

[0073] In some embodiments, with reference to FIGS. 3 to 5, the temperature compensation unit (12) further includes a support member (41) installed on the bottom of the auxiliary temperature control unit (121) and an elastic member (51) installed inside the support member (41). The support member (41) is installed on the separator plate (21), and the elastic member (51) applies a force directed toward the direction of the temperature control compensation area (not shown) corresponding to the auxiliary temperature control unit (121) under the action of the support member (41), thereby adjusting the distance between the top of the auxiliary temperature control unit (121) and the temperature control compensation area (not shown) corresponding to it.

[0074] In some embodiments, the elastic member (51) applies a force directed toward the direction of the temperature control compensation area (not shown) corresponding to the auxiliary temperature control member (121) under the action of the support member (41), so that the uppermost part of the auxiliary temperature control member (121) is bonded to the temperature control compensation area (not shown) corresponding to the temperature control compensation area.

[0075] In some embodiments, with reference to FIGS. 4 and FIGS. 5, the support member (41) includes an inner support member (411) that supports the auxiliary temperature control member (121) and an outer support member (412) that surrounds the inner support member (411), and there is a gap between the outer wall of the inner support member (411) and the outer wall of the outer support member (412).

[0076] In some embodiments, referring to FIGS. 3 and FIGS. 5, one end of the elastic member (51) is installed inside the outer support member (412), and the other end is in contact with the bottom of the inner support member (411).

[0077] In some embodiments, one end of the elastic member (51) is fixed inside the outer support member, and the other end is in contact with the bottom of the inner support member (411). When the elastic member (51) is in a compression state, a force is applied toward the auxiliary temperature control member (121) in the direction of the temperature control compensation area (not shown) corresponding to the auxiliary temperature control member (121) so that the uppermost part of the auxiliary temperature control member (121) is bonded to the corresponding temperature control compensation area (not shown).

[0078] In some embodiments, referring to FIG. 5, the uppermost part of the outer support (412) includes a recessed structure (52), and the auxiliary temperature control unit (121) is fixedly installed on the uppermost part of the inner support (411), and at least a portion of the inner support (411) is accommodated within the recessed structure (52), and the recessed structure (52) limits the range of motion along the radial direction of the inner support (411) so that the auxiliary temperature control unit (121) can effectively act on the corresponding temperature control compensation area (not shown).

[0079] In some embodiments, referring to FIGS. 3 and 5, a first lead hole (53) through which a lead passes is installed inside the inner support member (411), and a second lead hole (54) through which a lead passes is installed inside the outer support member (412). The first lead hole (53) and the second lead hole (54) are in communication with each other, and the elastic member (51) has a hollow structure, with both ends communicating with the first lead hole (53) and the second lead hole (54), so that a communication lead (not shown) installed in the compensation control member (13) can be electrically connected to the auxiliary temperature control member (121) through the second lead hole (54), the elastic member (51), and the first lead hole (53).

[0080] In some specific embodiments, the elastic part (51) is a spring.

[0081] FIG. 6 is a schematic diagram of the internal structure of another temperature compensation unit of an embodiment of the present invention, and FIG. 7 is a schematic diagram of the operating state of the temperature compensation unit shown in FIG. 6 inside a heating chamber.

[0082] In some embodiments, referring to FIGS. 6 and 7, the elastic member (51) surrounds the bottom portion of the inner support member (411) and contacts the separator plate (21). Specifically, the outer support member (412) penetrates the first separator plate (31) and then the bottom portion contacts the second separator plate (32), and the protrusion structure (63) of the bottom portion of the outer support member (412) is installed to be caught between the first separator plate (31) and the second separator plate (32), thereby realizing a detachable fixed connection of the outer support member (412) to the separator plate (21). The bottom portion of the elastic member (51) contacts the top portion of the second separator plate (32).

[0083] In some embodiments, referring to FIGS. 6 and 7, the internal support member (411) includes a bottom projection structure (61), and the elastic member (51) movably surrounds the bottom projection structure (61). When the elastic member (51) is in a compression state, it applies an acting force directed toward the direction of the temperature control compensation area (not shown) corresponding to the auxiliary temperature control member (121) so that the uppermost part of the auxiliary temperature control member (121) adheres to the corresponding temperature control compensation area (not shown).

[0084] In some embodiments, referring to FIGS. 6 and 7, the inner support (411) includes a top projection structure (62), the top of the outer support (412) surrounds the top projection structure (62), and the top projection structure (62) limits the range of motion along the axial direction of the outer support (412).

[0085] In some embodiments, with reference to FIGS. 6 and 7, a communication lead (not shown) installed in the compensation control unit (13) may be electrically connected to the auxiliary temperature control unit (121) through the first lead hole (53) installed in the inner support unit (411).

[0086] FIG. 8 is a schematic diagram of the operating state of a semiconductor device according to an embodiment of the present invention.

[0087] Referring to FIGS. 1 and FIGS. 8, the semiconductor device shown in FIGS. 8 includes a semiconductor substrate heating device (1) and a temperature calibration unit (83) shown in FIGS. 1. The outer wall (15) and the sealing plate (14) shown in FIGS. 1 are the structural components of the receiving chamber (82) shown in FIGS. 8, and the heating chamber is formed by the receiving chamber (82) and the cover (81).

[0088] Referring to FIGS. 1 and FIGS. 8, the temperature correction unit (83) is in contact with the upper surface of the heating plate (11) to obtain and provide feedback on temperature correction information, and the main control unit (86) is installed outside the heating chamber (not shown) and is communicationally connected to at least one of the compensation control unit (13) and the temperature correction unit (84).

[0089] In some specific embodiments, the temperature calibration unit (83) includes a temperature measuring wafer (84) and a temperature sensing feedback device (85) that are connected via communication. The temperature measuring wafer (84) is connected via communication to the main control unit (86) through the temperature sensing feedback device (85).

[0090] The temperature control method of the semiconductor device according to an embodiment of the present invention includes the step of driving at least one temperature compensation unit (12) through the compensation control unit (13) to perform temperature compensation control for the heating plate (11).

[0091] In some embodiments, the step of driving at least one temperature compensation unit (12) through the compensation control unit (13) to perform temperature compensation control for the heating plate (11) includes the step of driving at least one temperature compensation unit (12) to perform temperature compensation control for the heating plate (11) by controlling the compensation control unit (13) through the main control unit (86).

[0092] In some embodiments, before performing the step of controlling the compensation control unit (13) through the main control unit (86), the temperature measuring wafer (84) is placed on the upper surface of the heating plate (11), and the temperature of each temperature control area of ​​the heating plate (11) is raised through the control of the main control unit (86) so that the temperature of the temperature measuring wafer (84) reaches a target temperature.

[0093] Specifically, during the process of the temperature rising of the heating plate (11), the temperature sensing feedback device (85) feeds back the temperature value of each temperature measurement sampling point of the temperature measurement wafer (84) to the main control unit (86), and the main control unit (86) determines whether the temperature measurement wafer has reached the target temperature by comparing the average temperature calculated from the received temperature value of each temperature measurement sampling point with the target temperature.

[0094] In conventional technology, the temperature uniformity of the heating plate (11) is generally controlled by using a method of performing partition control on the heating plate (11). For example, the heating plate (11) is divided into 7 partitions, 13 partitions, 15 partitions, etc. Considering the layout requirements of functional elements and the limitations of wiring installation, the number of partitions of the heating plate (11) cannot be infinite, and each partition contains multiple temperature measurement sampling points on the temperature measurement wafer (84). For example, when a specific partition is indicated through the temperature measurement wafer (84), for instance, if the temperature uniformity of the first partition does not satisfy process requirements, the main control unit (86) must control the temperature of the first partition to rise after performing a temperature rise adjustment. However, such adjustment causes the following problem. Among the multiple temperature measurement sampling points included in the first partition, the average temperature of some temperature measurement sampling points is lower than the target temperature, but the temperature of some of these temperature measurement sampling points is higher than the target temperature, and it is highly likely that the temperature difference from the target temperature will also differ. As can be seen, temperature control for a single partition can easily cause temperature non-uniformity problems again within the entire range of the heating plate (11).

[0095] In addition, the above partition control method requires each partition to have independent temperature control, which significantly increases the cost of the temperature control part, and the cost becomes higher as the partition becomes finer.

[0096] In the technical solution of an embodiment of the present invention, after the temperature of the temperature measuring wafer (84) reaches a target temperature, temperature information of each temperature measuring area of ​​the temperature measuring wafer (84) is obtained through the temperature sensing feedback device (85), and a plurality of temperature control compensation areas are determined in which temperature compensation control of the bottom surface of the heating plate (11) is performed according to this temperature information. Next, the purpose of temperature compensation control is achieved by controlling the compensation control unit (13) to drive the corresponding temperature compensation unit (12) to raise or lower the temperature.

[0097] Although embodiments of the present invention have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that all such modifications and changes are included within the scope and spirit of the present invention as defined in the claims. Furthermore, the present invention described herein may have other embodiments and may be implemented or embodied in various ways.

Claims

Claim 1 A heating chamber; a main heating unit including a heating plate installed inside the heating chamber, wherein the bottom surface of the heating plate includes at least one temperature control compensation area; and a compensation control unit installed inside the heating chamber, wherein the upper surface is adjacent to the bottom surface of the heating plate. and includes at least one temperature compensation unit installed between the heating plate and the compensation control unit and communication-connected to the compensation control unit; the temperature compensation unit is installed corresponding to the temperature control compensation area and performs temperature compensation adjustment for the temperature control compensation area under the control of the compensation control unit, and the temperature compensation unit includes an auxiliary temperature control unit communication-connected to the compensation control unit, and the distance between the uppermost part of the auxiliary temperature control unit and the temperature control compensation area corresponding thereto is greater than or equal to 0, and further includes a separator plate installed between the heating plate and the compensation control unit, wherein the temperature compensation unit is installed on the separator plate, and the temperature compensation unit further includes a support member installed on the bottom part of the auxiliary temperature control unit and an elastic member installed inside the support member, wherein the support member is installed on the separator plate, and the elastic member applies an acting force directed toward the direction of the temperature control compensation area corresponding to the auxiliary temperature control unit under the action of the support member to adjust the distance between the uppermost part of the auxiliary temperature control unit and the temperature control compensation area corresponding thereto, and the support member includes an inner support member supporting the auxiliary temperature control unit and an outer support member surrounding the inner support member, and the inner support member A semiconductor substrate heating device characterized by having a gap between the outer wall and the outer wall of the external support member. Claim 2 delete Claim 3 A semiconductor substrate heating device according to claim 1, wherein the auxiliary temperature control unit comprises a heat-conducting element or a cooling element. Claim 4 A semiconductor substrate heating device according to claim 1, wherein the temperature compensation unit further includes a fixed part connected to the auxiliary temperature control unit, and the auxiliary temperature control unit is fixed to the corresponding temperature control compensation area through the fixed part. Claim 5 delete Claim 6 A semiconductor substrate heating device according to claim 1, characterized in that the constituent material of the separator plate includes an insulating material. Claim 7 A semiconductor substrate heating device according to claim 1, characterized in that the number of separator plates is at least two, and the temperature compensation unit is installed by being caught between adjacent separator plates. Claim 8 delete Claim 9 delete Claim 10 A semiconductor substrate heating device according to claim 1, characterized in that one end of the elastic part is installed inside the outer support part and the other end is in contact with the bottom part of the inner support part. Claim 11 A semiconductor substrate heating device according to claim 1, wherein the elastic part surrounds the bottom part of the internal support part and contacts the separator plate. Claim 12 A semiconductor substrate heating device according to claim 1, characterized in that a lead hole through which a lead passes is installed inside the internal support member. Claim 13 A semiconductor substrate heating device according to claim 1, characterized in that a lead hole through which a lead passes is installed inside the outer support member. Claim 14 A semiconductor substrate heating device according to claim 1, wherein the main heating unit further includes a main control unit for performing temperature control, and the compensation control unit is communication-connected to the main control unit to perform temperature compensation control under the control of the main control unit. Claim 15 A semiconductor substrate heating device according to claim 1, wherein the upper surface of the heating plate includes a substrate contact area, the bottom surface of the heating plate includes a bottom surface control area corresponding to the substrate contact area, and the temperature control compensation area is any one area within the bottom surface control area. Claim 16 A semiconductor device characterized by including a semiconductor substrate heating device according to claim 1. Claim 17 A semiconductor device according to claim 16, further comprising a temperature calibration unit, wherein the main heating unit further comprises a main control unit, wherein the temperature calibration unit is in contact with the heating surface of the heating plate of the semiconductor substrate heating device to acquire and provide feedback on temperature calibration information, and wherein the main control unit is installed outside the heating chamber and is communicationally connected to at least one of the compensation control unit and the temperature calibration unit. Claim 18 A method for controlling the temperature of a semiconductor device according to claim 16, characterized by comprising: a step S0 of providing a semiconductor device including a heating chamber, a main heating unit, a compensation control unit, and at least one temperature compensation unit; and a step S1 of driving at least one temperature compensation unit through the compensation control unit to perform temperature compensation control on the bottom surface of a heating plate of the main heating unit.

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