Embedded magnetic device integrated structure and manufacturing method thereof

Abstract

The present disclosure provides an embedded magnetic element integrated structure and a method for manufacturing the same. Specifically, the embedded magnetic element integrated structure comprises: a first insulating layer; a first circuit layer installed on a first surface of the first insulating layer; a component and a magnetic element, each embedded within the first insulating layer, wherein a terminal of the component and an electrode of the magnetic element each connect to the first circuit layer; and a second circuit layer installed on a second surface of the first insulating layer and connected to the first circuit layer so as to conduct through a first conductive column penetrating the first insulating layer. At least one terminal of the component is connected to at least one electrode of the magnetic element so as to conduct through the first circuit layer. This technical solution enables a package substrate integrated structure in which a magnetic element and a component are synchronously embedded in the same thin insulating layer. This reduces the thickness of the embedded substrate containing the magnetic element, simplifies the manufacturing process, and enables fine circuit wiring of the embedded magnetic element package substrate.

Description

Technology Field

[0001] The present disclosure relates to the field of semiconductor technology, and more specifically to an embedded magnetic device integrated structure and a method for manufacturing the same. Background Technology

[0002] As electronic technology advances day by day, performance requirements for electronic products are rising, and the demand for smaller dimensions is increasing. Consequently, the high-density integration and miniaturization of electronic product package substrates and package structures are inevitable trends. The trend toward miniaturizing magnetic components is driving the miniaturization of electronic devices and the implementation of integrated process technologies embedded in substrates and package substrates, establishing itself as a key direction for the future development of the industry.

[0003] In this regard, the object of the present disclosure is to provide an embedded magnetic element integrated structure and a method for manufacturing the same.

[0004] Based on the above objective, in a first aspect, the present disclosure provides an embedded magnetic element integrated structure.

[0005] This includes a first insulating layer, a first circuit layer, components and magnetic elements, and a second circuit layer.

[0006] The first circuit layer is installed on the first surface of the first insulating layer.

[0007] The above components and magnetic elements are each embedded within the first insulating layer. Additionally, the terminals of the components and the electrodes of the magnetic elements each connect to the first circuit layer.

[0008] The second circuit layer is installed on the second surface of the first insulating layer. Additionally, the first circuit layer is connected to be conductive through a first conductive column penetrating the first insulating layer.

[0009] Here, at least one terminal of the above component is connected to at least one electrode of the magnetic element and to conduct through the first circuit layer.

[0010] In a second aspect, an embodiment of the present disclosure further provides a method for manufacturing an embedded magnetic element integrated structure. This includes the following steps.

[0011] (a) Provide a carrier plate.

[0012] (b) A coil, an electrode of the coil, a first conductive column, and a sacrificial metal block are formed on the carrier plate. Here, the coil extends parallel to the carrier plate, and the electrode extends perpendicular to the coil.

[0013] (c) A sheet-type magnetic material and an insulating material are compressed to form a first magnetic layer covering the coil and a second insulating layer covering the first magnetic layer. Here, the coil and the electrode are embedded within the second insulating layer.

[0014] (d) The second insulating layer is thinned to expose the electrode, the first conductive column, and the sacrificial metal block.

[0015] (e) Remove the carrier plate and etch the exposed sacrificial metal block to form a cavity containing the part.

[0016] (f) An adhesive layer is formed on the surface of the second insulating layer where the coil is exposed. Additionally, a component is placed within the cavity to secure the terminal of the component through the adhesive layer.

[0017] (g) A sheet-type magnetic material and an insulating material are laminated and pressed onto the surface of the first magnetic layer of the second insulating layer exposed thereto to form a second magnetic layer on the first magnetic layer and a third insulating layer on the second magnetic layer.

[0018] (h) Remove the adhesive layer above.

[0019] (i) A first circuit layer is formed on the surface of the second insulating layer, and a second circuit layer is formed on the surface of the third insulating layer. Here, the first conductive pillar is used to connect the first circuit layer and the second circuit layer so that they are conductive.

[0020] As can be seen from the above, the technical solution of the embedded magnetic device integrated structure and the method for manufacturing the same provided in this disclosure realizes a package substrate integrated structure in which magnetic devices and components are synchronously embedded in the same thin insulating layer. Furthermore, co-layer embedding of magnetic devices and components is realized. This significantly reduces the thickness of the embedded substrate containing the magnetic devices. At the same time, the process is simplified, thereby improving product production efficiency and lowering production costs. Additionally, fine circuit wiring of the embedded magnetic device package substrate is realized. Brief explanation of the drawing

[0021] In order to more clearly explain the technical solutions of the present disclosure or related technology, the accompanying drawings that need to be used in describing the embodiments or related technology are briefly introduced below. The following accompanying drawings are merely embodiments of the present disclosure, and those skilled in the art to which the present disclosure pertains can obtain other drawings from these drawings without creative effort. In the accompanying drawings, the thickness and shape of some layers and regions may be exaggerated to aid understanding and facilitate explanation. FIGS. 1(a) to 1(q) are cross-sectional views of an intermediate structure at each step of a method for manufacturing an embedded magnetic element integrated structure according to one embodiment of the present disclosure. FIG. 2 is a structural diagram of an embedded magnetic element integrated structure according to an embodiment of the present disclosure. Specific details for implementing the invention

[0022] In order to more clearly explain the purpose, technical solution, and advantages of the present disclosure, the present disclosure will be described in more detail below with reference to specific embodiments and the accompanying drawings.

[0023] It should be noted that, unless otherwise defined, technical or scientific terms used in the embodiments of this disclosure have the ordinary meanings understood by those skilled in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in the embodiments of this disclosure are intended only to distinguish different components and do not indicate any order, quantity, or importance. Terms such as “include” or “include,” and similar terms, mean that the element or object appearing before such term includes the element or object listed after such term and equivalents thereof, and does not exclude other elements or objects. Terms such as “connected” or “connected to one another,” and similar terms, are not limited to physical or mechanical connections and may include electrical connections, whether direct or indirect. Terms such as “up,” “down,” “left,” “right,” etc., are used only to indicate relative positional relationships. If the absolute position of the described object changes, the relative positional relationship may also change accordingly. Unless these terms are used in conjunction with the terms “closely connected” or “directly,” one or more members may be located between two members.

[0024] Currently, to meet the trend of product miniaturization, magnetic devices are broadly classified into two types for packaging. One is the conventional surface mount process, where the magnetic device is relatively large and the volume after packaging is substantial. The other involves embedding the device within the package substrate, which allows for a reduction in volume after packaging. This method requires first fabricating a magnetic device that integrates a magnet and a metal coil, and then splitting it into a single unit. Subsequently, the device is attached to a pre-existing cavity on the substrate or package substrate using a patching method, followed by package fan-out. This enables the realization of the trend toward product miniaturization.

[0025] However, realizing a substrate structure with embedded magnetic elements by fabricating a device integrating magnetic materials and metal coils, cutting it, and mounting it on a package substrate involves a long and complex process with high production costs. Mounting a single magnetic element within a package substrate cavity and performing packaging and fan-out wiring makes it impossible to implement fine circuit wiring on the package substrate due to discrepancies in the connection between the device pins and the package substrate circuits.

[0026] With this in mind, a first aspect of the present disclosure provides a method for manufacturing an embedded magnetic device integrated structure. FIGS. 1(a) to 1(q) are cross-sectional views of an intermediate structure at each step of the method for manufacturing an embedded magnetic device integrated structure according to one embodiment of the present disclosure.

[0027] The above manufacturing method comprises the following steps: (a) Step: Provide a carrier plate (100). This is as illustrated in FIG. 1(a). The carrier plate (100) comprises a first seed layer (101), a first metal layer (102), and a second metal layer (103). Optionally, the material of the first seed layer (101) is titanium, and the materials of the first metal layer (102) and the second metal layer (103) are copper.

[0028] Optionally, the first metal layer (102) and the second metal layer (103) are physically combined to facilitate the implementation of the depaneling process technology.

[0029] Note that the first seed layer (101) may be omitted here. If necessary (e.g., before step b), it may be formed by deposition, and the present disclosure does not limit this.

[0030] (b) Step: A coil (201), an electrode (202), a first conductive column (203), and a sacrificial metal block (204) are formed on a carrier plate (100). This is as illustrated in FIGS. 1(b) to FIGS. 1(f).

[0031] Hereinafter, step (b) is described exemplarily with reference to FIGS. 1(b) to 1(f). Specifically, step (b) first includes, as shown in FIG. 1(b), (b1) a step of forming a first photoresist layer including a first pattern on a first seed layer (101). Here, the first photoresist layer may be formed by applying or pressing a photoresist material, followed by exposure and development. Next, as shown in FIG. 1(c), (b2) a step of forming a coil (201), some electrodes, some first conductive pillars, and some sacrificial metal blocks by electroplating and filling the first pattern. Then, as shown in FIG. 1(d), (b3) a step of forming a second photoresist layer including a second pattern on the first photoresist layer. Here, the method of forming the second photoresist layer is similar to that of the first photoresist layer, so it is not described in detail. Next, as illustrated in FIG. 1(e), (b4) the step of electroplating and filling a second pattern to form an electrode (202), a first conductive pillar (203), and a sacrificial metal block (204). Finally, as illustrated in FIG. 1(f), (b5) the step of removing the first photoresist layer and the second photoresist layer to expose the coil (201), the electrode (202), the first conductive pillar (203), and the sacrificial metal block (204).

[0032] Note that the difference between the first pattern and the second pattern is that the first pattern includes a coil pattern. The thickness of the coil (201) is lower than the height of the electrode (202), the first conductive column (203), and the sacrificial metal block (204). Thus, by adopting the first photoresist layer and the second photoresist layer, a corresponding structure is formed by dividing it into two electroplating steps. This allows the manufacturing of the magnetic element and the cavity formation step for embedding the component to be performed simultaneously. This helps shorten the process, improve product production efficiency, and reduce production costs.

[0033] Additionally, the coil (201) extends in a direction perpendicular to the height of the carrier plate (100). That is, the coil (201) extends along the planar direction of the carrier plate. This method helps to form a magnetic element with a flat structure. It can also effectively lower the height of the package structure and reduce the package volume. At the same time, the coil (201) is formed only once, preventing the formation of multiple layers, eliminating the need for alignment, and providing higher accuracy.

[0034] Here, the number of wheels, width, and height of the coil (201) can all be designed to be adjusted according to actual design requirements. This is not limited thereto.

[0035] The electrode (202) typically extends vertically from the surface of the coil (201) or is connected to the coil (201) to be conductive and extends vertically from the surface of the carrier plate (100). Typically, the coil (201) has two electrodes (202). However, the coil (201) may have more than two electrodes (202). In this case, the length of the coil of the magnetic element can be adjusted through electrode alignment, so the inductance can be adjusted.

[0036] Typically, the electrode (202), the first conductive column (203), and the sacrificial metal block (204) have the same height.

[0037] (c) Step: A sheet-type magnetic material and an insulating material are compressed to form a first magnetic layer (205a) and a second insulating layer (206a). This is as illustrated in FIGS. 1(g) to FIGS. 1(h). Here, a coil (201) and some electrodes (202) are embedded in the first magnetic layer (205a). The electrodes (202) penetrate the first magnetic layer (205a) and enter the second insulating layer (206a). Here, the sheet-type magnetic material is first fixed according to the position covering the coil (201) and the electrodes (202), and then the insulating material is laminated. Finally, the first magnetic layer (205a) and the second insulating layer (206a) are formed by compression.

[0038] Optionally, the material of the second insulating layer (206a) is a resin material containing glass fibers, such as PP. Adopting a resin material containing glass fibers helps to increase the rigidity of the product.

[0039] (d) Step: The second insulating layer (206a) is thinned to expose the electrode (202), the first conductive column (203), and the sacrificial metal block (204). This is as illustrated in FIG. 1(i). Optionally, the thinning process may be mechanical grinding, chemical mechanical grinding, or plasma thinning.

[0040] (e) Step: Remove the carrier plate (100) to expose the coil (201), electrode (202), first conductive pillar (203), sacrificial metal block (204), first magnetic layer (205a), and second insulating layer (206a). This is as illustrated in FIG. 1(j).

[0041] In some embodiments, the step of removing the carrier plate (100) specifically includes the following steps.

[0042] (e1) A third photoresist layer (207) is formed on the second insulating layer. Here, the third photoresist layer can protect the electrode (202) and the first conductive pillar (203) so that they are not damaged during the subsequent metal layer etching process.

[0043] Optionally, the third photoresist layer (207) exposes the sacrificial metal block (204) through exposure and development. This can be used immediately for subsequent removal of the sacrificial metal block (204).

[0044] (e2) Separate the first metal layer (102) and the second metal layer (103).

[0045] (e3) The metal layer attached to the second insulating layer (206a), such as the first metal layer (102) and the first seed layer (101), is etched. This exposes the coil (201), electrode (202), first conductive pillar (203), sacrificial metal block (204), first magnetic layer (205a), and second insulating layer (206a).

[0046] Optionally, if the third photoresist layer (207) does not expose the sacrificial metal block (204), the third photoresist layer must be removed.

[0047] (f) Step: A fourth photoresist layer is formed to expose a sacrificial metal block (204) to the second insulating layer (206a). Additionally, the sacrificial metal block (204) is etched to form a cavity (204b) containing an element, and the fourth photoresist layer is removed. This is as illustrated in FIG. 1(k).

[0048] Note that when the third photoresist layer (207) exposes the sacrificial metal block (204) through exposure and development, it can be used as the fourth photoresist layer. In this case, the fourth photoresist layer must be formed only on the other side of the second insulating layer (206a). Otherwise, the fourth photoresist layer must be formed on both sides of the second insulating layer (206a) to facilitate protection of structures such as coils.

[0049] (g) Step: An adhesive layer (300) is formed on the surface where the coil (201) of the second insulating layer is exposed. Additionally, a part (208) is placed within the cavity (204b), and the terminals of the part (208) are fixed by adhering them to the adhesive layer (300). This is as illustrated in FIG. 1(l). Here, the adhesive layer (300) is used to temporarily fix the part (208).

[0050] Here, the component (208) may be an active component (e.g., transistor, IC component, logic circuit component, power amplifier), a passive component (capacitor, inductor, resistor), or a combination thereof. The quantity of the component (208) is not limited to just one.

[0051] (h) Step: A sheet-type magnetic material and an insulating material are laminated and pressed onto the surface of the first magnetic layer (205a) of the second insulating layer (206a) to form the second magnetic layer (205b) and the third insulating layer (206b). Here, the second magnetic layer covers the first magnetic layer (205a). This is as illustrated in FIGS. 1(m) to FIGS. 1(n). Here, the method of forming the second magnetic layer (205b) and the third insulating layer (206b) is similar to the method of forming the first magnetic layer and the second insulating layer, so it is not described repeatedly here.

[0052] The material of the third insulating layer is a resin material that does not contain glass fibers. For example, it is selected from one of the group consisting of liquid crystal polymer, BT (bismaleimide triazine) resin, semi-cured prepreg, ABF (Ajinomoto Build-up) film, epoxy resin, and polyimide resin. However, the present disclosure is not limited thereto.

[0053] Here, a micro-inductor (mini-inductor) is formed by compression to create an integrated structure embedded in the substrate. Here, the first magnetic layer (205a), the second magnetic layer (205b), the coil (201), and the electrode (202) form the micro-inductor.

[0054] (i) Step: Remove the adhesive layer (300). This is as shown in FIG. 1(o).

[0055] Optimizing the process of embedded magnetic devices and package substrates, and merging the two manufacturing processes to integrate them into an integrated structure, helps shorten the process by reducing unnecessary process steps, increases production capacity, and lowers production costs.

[0056] (j) Step: A circuit layer is formed on the outer exposed surface of the second insulating layer (206a) and the third insulating layer (206b). Here, the first conductive pillar (203) is used to connect the circuit layer. This is as illustrated in FIG. 1(p) and FIG. 1(q).

[0057] In some embodiments, step (j) includes the following steps.

[0058] (j1) A hole is made in the third insulating layer (206b) to expose the rear surface of the component and the first conductive column (203). Here, laser drilling or mechanical drilling may be adopted, but is not specifically limited.

[0059] (j2) A second seed layer (303) is formed on the outer exposed surface of the third insulating layer (206b) and the second insulating layer (206a).

[0060] (j3) A fifth photoresist layer including a circuit pattern is formed on the second seed layer (303).

[0061] (j4) Electroplating and filling the circuit pattern, forming the first circuit layer (301) on the second insulating layer, and forming the second circuit layer (302) on the third insulating layer.

[0062] (j5) Remove the 5th photoresist layer.

[0063] (j6) The second seed layer (303) is etched to obtain a structure as shown in FIG. 1(p).

[0064] Optionally, step (j) includes the following steps.

[0065] A fourth insulating layer (304) is formed on both sides of the first circuit layer (301) and the second circuit layer (302). Additionally, a third circuit layer (305) is formed on the fourth insulating layer. The interlayer conductivity method between the third circuit layer (305), the first circuit layer (301), and the second circuit layer (302) may include a second conductivity pillar (306), laser hole conductivity, or mechanical hole conductivity. This is not specifically limited.

[0066] (k) Step: A solder resist layer (307) is formed on the third circuit layer (305). The third circuit layer (305) is exposed through the solder resist window. This is as illustrated in FIG. 1(q).

[0067] The integrated structure of the embedded magnet and package substrate in this technical solution reduces electrical connection deviations between the embedded magnet element and the package substrate, and improves the fine connection performance of the terminals and the package substrate. Furthermore, it enhances the fine wiring capability of the magnetic element integrated package substrate structure and effectively improves product yield.

[0068] Embodiments of the present disclosure further provide an embedded magnetic element integrated structure, which can be manufactured by the manufacturing method described above. As illustrated in FIG. 2, the embedded magnetic element integrated structure comprises a first insulating layer (206), a first circuit layer (301), a component (208) and a magnetic element (200), and a second circuit layer (302).

[0069] Optionally, the first insulating layer (206) includes a second insulating layer (206a) and a third insulating layer (206b). The materials of the second insulating layer (206a) and the third insulating layer (206b) may be the same or different.

[0070] The first circuit layer (301) is installed on the first surface of the first insulating layer (206).

[0071] The component (208) and the magnetic element (200) are each embedded within the first insulating layer (206). Additionally, the terminal of the component (208) and the electrode (202) of the magnetic element (200) each connect to the first circuit layer (301).

[0072] The second circuit layer (302) is installed on the second surface of the first insulating layer (206). The first circuit layer (301) is connected through a first conductive column penetrating the first insulating layer (206). Here, at least one terminal of the component (208) and at least one electrode (202) of the magnetic element (200) are connected to conduct through the first circuit layer (301).

[0073] Optionally, the material of the second insulating layer (206a) located on the component (208) and the magnetic element terminal side is a resin material containing glass fibers. The material of the third insulating layer (206b) located on the component (208) and the rear side of the magnetic element is a resin material not containing glass fibers. Since the materials of the second insulating layer (206a) and the third insulating layer (206b) can be described by referring to the description of the manufacturing method described above, they are not described again here.

[0074] In some embodiments, the magnetic element (200) includes a coil (201). The coil (201) extends in a direction perpendicular to the height of the first insulating layer (206).

[0075] In some embodiments, the magnetic element (200) further comprises a magnetic layer (e.g., a first magnetic layer and a second magnetic layer). A coil (201) is embedded within the magnetic layer. Here, an electrode (202) extends vertically from the coil (201) through the magnetic layer to a first circuit layer (301). The magnetic element (200) comprises at least two electrodes (202).

[0076] In some embodiments, the embedded magnetic element integrated structure further includes a fourth insulating layer (304) and a third circuit layer (305).

[0077] The fourth insulating layer (304) is installed in the first circuit layer (301) and the second circuit layer (302), respectively.

[0078] The third circuit layer (305) is installed in the fourth insulation layer (304). Additionally, the first circuit layer and the second circuit layer are connected through a second conductive column (306) penetrating the fourth insulation layer (304).

[0079] In some embodiments, the embedded magnetic element integrated structure further includes a solder resist layer (307). This exposes a third circuit layer (305) through a solder resist window.

[0080] The embedded magnetic element integrated structure of the above embodiment has the beneficial effects of the manufacturing method embodiment described above, so it is not described again here.

[0081] Those skilled in the art should understand the following: that is, the discussion of any of the embodiments described above is merely illustrative and is not intended to imply that the scope of the disclosure (including the claims) is limited by such examples. Under the spirit of the disclosure, technical features of the embodiments or different embodiments may be combined, and steps may be implemented in any order. Furthermore, while many other modifications exist in different aspects of the embodiments of the disclosure as described above, they have not been provided in detail for the sake of brevity.

[0082] The embodiments of the present disclosure are intended to include all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Accordingly, all omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of the present disclosure are all within the scope of protection of the present disclosure.

Claims

Claim 1 delete Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 A method for manufacturing an embedded magnetic device integrated structure comprising: (a) providing a carrier plate; (b) forming a coil, an electrode of the coil, a first conductive pillar, and a sacrificial metal block on the carrier plate, wherein the coil extends parallel to the carrier plate and the electrode extends perpendicularly to the coil; (c) compressing a sheet-type magnetic material and an insulating material so as to laminate them to form a first magnetic layer covering the coil and a second insulating layer covering the first magnetic layer, wherein the coil and the electrode are embedded within the second insulating layer; (d) thinning the second insulating layer to expose the electrode, the first conductive pillar, and the sacrificial metal block; (e) removing the carrier plate and etching the exposed sacrificial metal block to form a cavity for embedding a component; (f) forming an adhesive layer on the surface of the second insulating layer where the coil is exposed, and placing the component within the cavity to fix the terminal of the component through the adhesive layer; (g) a sheet-type magnetic material on the surface of the first magnetic layer of the second insulating layer where the first magnetic layer is exposed A manufacturing method characterized by comprising: (h) a step of forming a second magnetic layer on the first magnetic layer and a third insulating layer on the second magnetic layer by compressing the material and the insulating material so as to be laminated; (h) a step of removing the adhesive layer; and (i) a step of forming a first circuit layer on the surface of the second insulating layer and forming a second circuit layer on the surface of the third insulating layer - wherein the first conductive pillar is used to connect the first circuit layer and the second circuit layer so as to be conductive. Claim 9 A manufacturing method according to claim 8, wherein the carrier plate further comprises a first seed layer, and step (b) specifically comprises: (b1) forming a first photoresist layer including a first pattern on the first seed layer; (b2) electroplating and filling the first pattern to form the coil and some electrodes, some first conductive pillars and some sacrificial metal blocks; (b3) forming a second photoresist layer including a second pattern on the first photoresist layer; (b4) electroplating and filling the second pattern to form the electrodes, the first conductive pillars and the sacrificial metal blocks; and (b5) removing the first photoresist layer and the second photoresist layer. Claim 10 A manufacturing method according to claim 8, characterized in that at least two electrodes are connected to the coil. Claim 11 A manufacturing method according to claim 8, characterized in that the material of the second insulating layer is a resin material including glass fibers. Claim 12 A manufacturing method according to claim 8, wherein the carrier plate comprises a stacked first metal layer and a second metal layer, and step (e) specifically comprises: (e1) a step of forming a third photoresist layer on the second insulating layer; (e2) a step of separating the first metal layer and the second metal layer; and (e3) a step of etching the metal layer attached to the second insulating layer to expose the coil, the electrode, the first conductive column, the sacrificial metal block, the first magnetic layer and the second insulating layer. Claim 13 A manufacturing method according to claim 8, characterized in that the material of the third insulating layer is a resin material that does not contain glass fibers. Claim 14 A manufacturing method according to claim 8, further comprising (j) a step of (j1) laminating a fourth insulating layer to each of the first circuit layer and the second circuit layer; (j2) forming a second conductive pillar penetrating the fourth insulating layer; and (j3) forming a third circuit layer to each of the two surfaces of the fourth insulating layer, wherein the third circuit layer is connected to each of the first circuit layer and the second circuit layer so as to be conductive through the second conductive pillar. Claim 15 A manufacturing method according to claim 14, further comprising the step of (k) forming a solder resist layer on the third circuit layer and exposing the third circuit layer through a solder resist window.

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