Method for adjusting memory operating frequency, smart terminal and storage medium

KR103000110B1Active Publication Date: 2026-08-05SHENZHEN TCL NEW-TECH CO LTD
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Patent Information

Application Number
KR1020237001744
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2021-07-08
Publication Date
2026-08-05
Estimated Expiration
2041-07-08

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Abstract

The present application discloses a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium, comprising the steps of: determining memory read / write data of a terminal system based on execution information of a smart terminal; determining an operating mode of a memory based on memory read / write data; and adjusting the operating frequency of a memory based on the operating mode. The present application improves the utilization rate of a memory by determining the operating mode of a memory based on memory read data of a terminal system and adjusting the operating frequency of a memory based on the operating mode.
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Description

Technology Field

[0001] The present invention belongs to the technical field of memory control, and in particular relates to a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium. Background Technology

[0002] With the advancement of embedded equipment, the demands on hardware for embedded systems are steadily increasing. Currently, memory chips are integrated into many chips to account for performance, cost, and power consumption. However, due to requirements for capacity and performance, combinations of memory chips with different frequencies are used in actual applications. The problem to be solved

[0003] In conventional technology, when a terminal system is executed, memory read / write operations are performed at a frequency corresponding to a low-frequency memory chip. However, since the performance of the high-frequency memory chip is not fully utilized, memory utilization efficiency is low and memory resources are wasted. Therefore, conventional technology still needs to be improved and developed. means of solving the problem

[0004] The embodiments of the present application provide a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium to solve the problem of low memory utilization efficiency and wasted memory resources in the prior art, which has defects in the prior art described above.

[0005] In a first aspect, an embodiment of the present application provides a method for adjusting the operating frequency of a memory, and said method,

[0006] A step of determining memory read / write data of a terminal system based on execution information of a smart terminal, wherein the execution information is used to reflect information generated by the terminal system during execution, and the memory read / write data is used to reflect the read / write speed of the memory of the terminal system;

[0007] A step of determining the operation mode of the memory based on the above memory read / write data;

[0008] It includes a step of adjusting the operating frequency of the memory based on the above operating mode.

[0009] In one embodiment, the step of determining memory read / write data of a terminal system based on execution information of the smart terminal is,

[0010] A step of obtaining execution information of the smart terminal;

[0011] A step of acquiring a system mission being performed by the terminal system based on the above execution information, wherein the system mission includes one or more of an application, a service process, or a system function;

[0012] It includes a step of determining memory read / write speed data of the terminal system based on the above system mission.

[0013] In one embodiment, the step of determining memory read / write speed data of the terminal system based on the system mission is,

[0014] A step of acquiring corresponding read / write peak speed data when the system mission and the terminal system are activated based on the system mission, and using the read / write peak speed data to reflect the maximum read / write speed for its own memory when the system mission and the terminal system are activated;

[0015] A step of acquiring instantaneous read / write speed data for the memory of the system mission when the terminal system performs the system mission;

[0016] It includes a step of determining the memory read / write data based on the above read / write peak speed data and the above instantaneous read / write speed data.

[0017] In one embodiment, the step of acquiring corresponding read / write peak rate data when the system mission and the terminal system are activated based on the system mission is:

[0018] A step of acquiring a preset memory read / write data table, wherein the memory read / write data table stores read / write peak rate data corresponding to the application, read / write peak rate data corresponding to the service process, read / write peak rate data corresponding to the system function, and read / write peak rate data corresponding to the terminal system;

[0019] It includes the step of acquiring read / write peak speed data corresponding to the system mission and the terminal system, respectively, based on the memory read / write data table.

[0020] In one embodiment, the step of acquiring read / write peak speed data corresponding to the system mission and the terminal system, respectively, based on the memory read / write data table, is:

[0021] A step of matching the above system mission with the above memory read / write data table and matching the above terminal system with the above memory read / write data table;

[0022] It includes the step of acquiring read / write peak speed data corresponding to the application, service process, or system function in the above system mission, and read / write peak speed data corresponding to the terminal system, respectively.

[0023] In one embodiment, the step of determining the memory read / write data based on the read / write peak rate data and the instantaneous read / write rate data is,

[0024] It includes the step of obtaining the memory read / write data by summing the above read / write peak speed data and the above instantaneous read / write speed data.

[0025] In one embodiment, the step of determining the operation mode of the memory based on the memory read / write data is,

[0026] A step of acquiring preset same frequency bandwidth peak speed data, wherein the same frequency bandwidth peak speed data is used to reflect the instantaneous read / write speed at the same frequency of memory chips of different models among the memory;

[0027] If the memory read / write data is greater than the same frequency bandwidth peak speed data, the step of setting the operation mode of the memory to a non-same frequency operation mode;

[0028] If the memory read / write data is smaller than the same frequency bandwidth peak rate data, the method of operation of the memory is set to the same frequency operation mode.

[0029] In one embodiment, the step of adjusting the operating frequency of the memory based on the operating mode is,

[0030] When the operating mode of the memory is a same frequency operating mode, a step of acquiring a frequency corresponding to all memory chips of the memory, determining the lowest frequency among the frequencies corresponding to all memory chips, and setting the lowest frequency as the operating frequency of all memory chips of the memory;

[0031] When the operation mode of the memory is a non-uniform frequency operation mode, the method includes a step of controlling all memory chips of the memory to operate at a frequency corresponding to each chip.

[0032] In a second aspect, an embodiment of the present application provides a smart terminal comprising a memory and one or more programs stored in the memory; and a method for adjusting the operating frequency of the memory configured to execute the one or more programs by one or more processors.

[0033] In a third aspect, an embodiment of the present application provides a non-transient computer-readable storage medium that enables the electronic equipment to perform a method for adjusting the operating frequency of the memory when a command of the storage medium is executed by a processor of the electronic equipment. Effects of the invention

[0034] In this embodiment, memory read / write data of the terminal system is first determined based on execution information of the smart terminal. Since the execution information reflects information generated by the terminal system during execution, the read / write speed for the memory can be determined during the execution process of the terminal system according to the execution information, that is, the memory read / write data can be obtained. Next, the operation mode of the memory is determined based on the memory read / write data, and finally, the operation frequency of the memory is adjusted based on the operation mode of the memory. Since the operation mode of this embodiment is determined based on the memory read / write data and the memory read / write data is obtained based on the execution information of the smart terminal, it can be seen that the operation mode of this embodiment is determined according to the execution information generated during the actual execution process of the terminal system. By adjusting the operation frequency of the memory according to the operation mode in this way, the operation frequency of the memory is adjusted according to the execution information, thereby achieving the effect of dynamically adjusting the operation frequency of the memory, which enables the memory to perform at its maximum capacity and improves the utilization efficiency of the memory. Brief explanation of the drawing

[0035] Hereinafter, the technical solution and beneficial effects of the present application can be clarified through a detailed description of specific embodiments of the present application with reference to the attached drawings. FIG. 1 is a flowchart of a method for adjusting the operating frequency of a memory provided by an embodiment of the present invention. FIG. 2 is a schematic diagram of the flowchart for acquiring memory read / write data in a method for adjusting the operating frequency of a memory provided by an embodiment of the present invention. FIG. 3 is a flowchart for determining the operating mode in a method for adjusting the operating frequency of a memory provided by an embodiment of the present invention. FIG. 4 is a schematic flowchart of adjusting the operating frequency of a memory in a method for adjusting the operating frequency of a memory provided by an embodiment of the present invention. FIG. 5 is a diagram of the principle of a memory operation frequency adjustment device provided by an embodiment of the present invention. FIG. 6 is a diagram of the principle between each module of a specific application embodiment in a memory operation frequency adjustment device provided by an embodiment of the present invention. FIG. 7 is a block diagram of the internal structural principle of a smart terminal provided by an embodiment of the present invention. Specific details for implementing the invention

[0036] To clarify the purpose, technical solution, and advantages of the present application, the present application is described in more detail below with reference to the attached drawings and examples. It should be understood that the specific examples described herein are for interpreting the present application only and are not intended to limit the present application.

[0037] It must be explained that, in the embodiment of the present application, if a direction indicator (e.g., up, down, left, right, front, back…) is included, said direction indicator is used only to interpret the relative positional relationship, movement situation, etc. between each part in a specific posture (see drawings), and if said specific posture changes, said direction indicator also changes accordingly.

[0038] Researchers have discovered that as embedded equipment advances, the demands on equipment hardware for embedded systems are increasing. Currently, memory chips are integrated into many chips to account for performance, cost, and power consumption. However, due to demands for capacity and performance, combinations of memory chips with various frequencies are used in actual applications. For example, the maximum capacity of a DDR3 memory chip is 512M, and in actual applications, one can choose to use a DDR4 memory chip or an external memory chip of another model; a combination of an internal DDR3-2133 memory chip and an external DDR4-2666 memory chip may also exist, thus allowing for the existence of combinations of memory chips with different frequencies. However, in conventional technology, when a terminal system is in operation, memory read / write operations are performed at a frequency corresponding to the low-frequency memory chip; consequently, the performance of the high-frequency memory chip is not fully utilized, resulting in reduced memory utilization efficiency and wasted memory resources. For example, in the case of a combination of a memory chip of model DDR3-2133 and an external memory chip of model DDR4-2666, the terminal system performs read / write operations on all memory chips using the frequency corresponding to the DDR3-2133 model memory chip; consequently, the DDR4-2666 model memory chip fails to deliver maximum performance, leading to resource waste.

[0039] To solve the problems of the prior art, the present embodiment provides a method for adjusting the operating frequency of a memory that maximizes the performance of the memory and improves the utilization efficiency of the memory through the method for adjusting the operating frequency of the memory of the present embodiment. Specifically, the present embodiment first determines memory read / write data of a terminal system based on execution information of a smart terminal. Since the execution information reflects information generated by the terminal system during execution, the terminal system can determine the read / write speed for the memory during execution according to the execution information, that is, obtain memory read / write data. Next, the operation mode of the memory is determined based on the memory read / write data, and finally, the operating frequency of the memory is adjusted based on the operation mode of the memory. Since the operation mode of the present embodiment is determined based on the memory read / write data and the memory read / write data is obtained based on the execution information of the smart terminal, it can be seen that the operation mode of the present embodiment is determined according to the execution information generated during the actual execution process of the terminal system. By adjusting the operating frequency of the memory according to the operation mode in this way, the operating frequency of the memory is adjusted according to the execution information, thereby achieving the effect of dynamically adjusting the operating frequency of the memory. Compared to a terminal system of the prior art that performs memory read / write operations at a frequency corresponding to a low-frequency memory chip, the present embodiment can achieve maximum memory performance and improve memory utilization efficiency.

[0040] For example, when a smart terminal is executed, execution information of the smart terminal is acquired, and then the read / write speed of the terminal system's memory is acquired according to the execution information, that is, the memory read / write data of the terminal system is obtained. Next, the memory operation mode, such as a same-frequency operation mode or a non-same-frequency operation mode, is determined according to the memory read / write data. Finally, the memory operation frequency is adjusted according to the operation mode. For example, in the case where the memory is a combination of a memory chip with a model of DDR3-2133 and an external memory chip with a model of DDR4-2666, in this embodiment, memory read / write data is acquired based on the execution information, and then the operation mode is determined. By adjusting the operation frequency of the memory chip with a model of DDR3-2133 and the memory chip with an external model of DDR4-2666 according to the operation mode, the maximum performance of the memory chip with a model of DDR3-2133 and the memory chip with an external model of DDR4-2666 can be achieved, thereby improving resource utilization.

[0041] Exemplary method:

[0042] The present embodiment provides a method for adjusting the operating frequency of a memory applied to a smart terminal, and specifically, as illustrated in FIG. 1, the method includes the following steps.

[0043] Step S100, memory read / write data of the terminal system is determined based on execution information of the smart terminal, the execution information is used to reflect information generated by the terminal system during execution, and the memory read / write data is used to reflect the read / write speed of the memory of the terminal system.

[0044] Specifically, when implementing this, since the smart terminal generates execution information during execution, the execution information may reflect information generated while the smart terminal is executing and while performing a system mission. This execution information may be storage memory data occupied by the smart terminal during execution, or, when the smart terminal executes an application, it may include name information of the application, read / write data for memory of the application, and execution record data of the application. Therefore, the system mission currently being executed by the smart terminal can be determined based on the execution information. For example, after analyzing the execution information, since WeChat chat record data continues to increase, it can be confirmed through this chat record data that the system mission currently being executed by the smart terminal is WeChat execution. Since the smart terminal performs read / write operations for memory when executing a system mission, in this embodiment, memory read / write data of the terminal system can be obtained while executing the system mission; and since the memory read / write data is data when the terminal system reads / writes memory, the memory read / write data may reflect the memory read / write speed of the terminal system. For example, when a smart terminal launches a specific application, execution information regarding the launch of the application is generated, and since the execution information includes memory read / write data of the terminal system when launching the application and when executing a subsequent application, memory read / write data can be obtained based on the execution information.

[0045] In one embodiment, as illustrated in FIG. 2, the present embodiment includes the following steps when acquiring memory read / write data.

[0046] Step S101, obtain execution information of the smart terminal;

[0047] Step S102, based on execution information, the terminal system acquires a system mission being executed, and the system mission includes one or more of an application, a service process, or a system function;

[0048] Step S103, determine the memory read / write speed data of the terminal system based on the system mission.

[0049] Specifically, when implementing this, since the memory read / write data of the terminal system is related to the execution information of the smart terminal, this embodiment must first obtain the execution information of the smart terminal and then obtain the system mission being performed by the smart terminal according to the execution information. Since the smart terminal performs read / write operations on the memory when performing the system mission, this embodiment can obtain memory read / write speed data of the terminal system according to the system mission. In one embodiment, the system mission includes one or more of an application, a service process, or a system function; that is, the system mission currently being performed by the smart terminal may not be just one but several. For example, the smart terminal (e.g., a smartphone) is performing WeChat and NetEase Music, meaning that the user is listening to songs using NetEase Music while chatting with friends using WeChat. Additionally, a GPS location tracking service capable of obtaining the location information of the smart terminal in real time is being performed in the background of the smart terminal. It can be seen that the system mission being performed by the smart terminal includes at least the WeChat app, NetEase Music, and the GPS location tracking service. When a smart terminal performs these system missions, the terminal system must perform memory read / write operations to store data.

[0050] Since the memory read / write data of the terminal system includes data of multiple dimensions, this embodiment must accurately acquire the memory read / write data so that the operation mode of the memory can be determined more accurately based on the memory read / write data in a subsequent step. Specifically, the terminal system performs read / write operations on the memory itself during execution, and the system mission also performs read / write operations on the memory itself after activation. For example, WeChat itself performs read / write operations on the memory during execution to store data. Additionally, when the terminal system performs the system mission, the system mission also performs read / write operations on the memory; for example, WeChat turns on the camera function during execution, and the camera function performs read / write operations on the memory. Therefore, the memory read / write data of this embodiment includes data that performs read / write operations on the memory itself upon activation of the terminal system, data that performs read / write operations on the memory itself upon activation of the system mission, and data that the system mission performs read / write operations on the memory when the terminal system performs the system mission.

[0051] In one embodiment, this embodiment is intended to improve the resource utilization of memory by adjusting the operating frequency of the memory, and the operating frequency of the memory is generally measured based on the read / write speed of the memory. Generally, if the read / write speed of the memory is fast, the corresponding required operating frequency also increases. Therefore, this embodiment acquires the read speed of the memory when acquiring memory read data in order to adjust the operating frequency more accurately. Specifically, after determining the system mission, this embodiment first acquires read / write peak speed data corresponding to the system mission and the startup of the terminal system based on the system mission. Next, when the terminal system performs the system mission, it acquires instantaneous read / write speed data of the system mission for the memory. Finally, it determines memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data. That is, the memory read / write data includes read / write peak speed data when the terminal system starts, read / write peak speed data when the system mission starts, and instantaneous read / write speed data when the system mission is performed.

[0052] Specifically, when applying this embodiment, read / write peak rate data corresponding to the startup of the system mission and terminal system is obtained primarily by obtaining a preset memory read / write data table. The memory read / write data table is preset based on the read / write data for the memory of the system mission and the terminal system. Accordingly, the memory data table stores read / write peak rate data corresponding to the system mission and read / write peak rate data corresponding to the terminal system; that is, according to the memory data table, each system mission can determine the maximum read / write data for the memory and the terminal system can determine the maximum read / write data for the memory. However, since the system mission includes one or more of an application, a service process, or a system function, the memory read / write data table stores read / write peak rate data corresponding to the application, read / write peak rate data corresponding to the service process, read / write peak rate data corresponding to the system function, and read / write peak rate data corresponding to the terminal system, and the read / write peak rate data corresponding to the system mission and the terminal system can be quickly determined by the memory read / write data table. In one embodiment, the memory read / write data table is pre-configured and can be called at any time.When setting up a memory read / write data table, as illustrated in FIG. 6, the present embodiment uses a CPU to control a memory controller of a memory control module to read and record the peak read / write speed of the memory for the terminal system (i.e., acquire read / write peak speed data corresponding to the terminal system) and the maximum read / write speed of the memory when each application, service process, and system function is started (i.e., acquire read / write peak speed data corresponding to the system) to form a memory read / write data table. Specifically, as shown in Table 1 below, Table 1 includes read / write peak speed data corresponding to the system mission (i.e., one or more of the application, service process, or system function) and the terminal system.

[0053] number designation Read / write peak rate 1 terminal system 4520MB / s 2 Communication services 20 MB / s 3 GPS location tracking service 42MB / s 4 WeChat app 12MB / s 5 Wang Yiyun Music 5MB / s … … … n xx function 35MB / s

[0054] Therefore, by acquiring the system mission being performed by the smart terminal, the system mission can be matched with the memory read / write data table, and the terminal system can be matched with the memory read / write data table. The present embodiment uses a data processing module to search the memory read data table (i.e., Table 1) according to the system mission to determine the read / write peak speed data corresponding to the system mission (i.e., application, service process, or system function), and then acquires the read / write peak speed data corresponding to the terminal system itself during startup from the memory read data table (i.e., Table 1). For example, if the system mission being performed by the smart terminal is the WeChat app, Wangyi Cloud Music, or GPS location tracking service, according to Table 1, the read / write peak speed data corresponding to the WeChat app can be obtained as 12 MB / s, and the read / write peak speed data corresponding to Wangyi Cloud Music can be obtained as 5 MB / s; Read / write peak speed data corresponding to the GPS location tracking service can be obtained at 42 MB / s, and read / write peak speed data corresponding to the terminal system can also be obtained at 4520 MB / s. After obtaining read / write peak speed data corresponding to the terminal system and the system mission, the present embodiment obtains instantaneous read / write speed data of the system mission for the memory when the terminal system performs the system mission. Specifically, as shown in FIG. 6, the CPU of the present embodiment can also read instantaneous read / write speed data generated during the execution of the system mission through the memory controller of the memory control module, and since the instantaneous read / write speed for the memory during the execution of the system mission may vary depending on the speed of the bandwidth, the present embodiment obtains instantaneous read / write speed data through a real-time collection method.For example, when WeChat turns on the camera function, the camera function performs a read / write operation on the memory, and at this time, instantaneous read / write speed data for the memory can be acquired, and the instantaneous read / write speed data is the instantaneous read / write speed for the memory during the execution of the system mission.

[0055] After acquiring read / write peak speed data and instantaneous read / write speed data, the present embodiment obtains memory read / write data by summing the read / write peak speed data and the instantaneous read / write speed data. For example, if the read / write peak speed data corresponding to the terminal system is S1, the read / write peak speed data corresponding to the system mission is S2, and the instantaneous read / write speed data during the execution of the system mission is S3, the memory read / write data is S = S1 + S2 + S3.

[0056] Step S200, the operation mode of the memory is determined based on memory read / write data.

[0057] Specifically, when implementing this embodiment, memory read / write data is acquired, the memory read / write data is analyzed, and the memory operation mode is determined based on the memory read / write data. The memory operation mode indicates which frequency the memory operates at as the operating frequency. The memory operation mode includes a homo-frequency operation mode and a non-homogeneous frequency operation mode. The homo-frequency operation mode is when all memory chips use the same frequency as the operating frequency. The non-homogeneous frequency operation mode is when each memory chip uses a frequency corresponding to itself as the operating frequency. In this embodiment, determining the memory operation mode involves adjusting the memory operation frequency according to the operation mode to achieve maximum memory performance and improve resource utilization. The memory operation mode includes a homo-frequency operation mode and a non-homogeneous frequency operation mode.

[0058] In one embodiment, as illustrated in FIG. 3, step S200 of the present embodiment includes the following steps.

[0059] Step S201, acquire preset same frequency bandwidth peak speed data, and the same frequency bandwidth peak speed data is used to reflect the instantaneous read / write speed at the same frequency of memory chips of different models among the memory;

[0060] Step S202, if the memory read / write data is greater than the same frequency bandwidth peak rate data, the memory operation mode is set to a non-same frequency operation mode;

[0061] Step S203, if the memory read / write data is smaller than the peak rate data of the same frequency bandwidth, the memory operation mode is set to the same frequency operation mode.

[0062] Specifically, when implemented, the present embodiment determines memory read / write data and then compares the memory read / write data with same-frequency bandwidth peak speed data to determine the memory operation mode based on the comparison result. In one embodiment, the same-frequency bandwidth peak speed data is pre-set and can be called at any time. The same-frequency bandwidth peak speed data is used to reflect the instantaneous read / write speed at the same frequency of memory chips of different models among the memory. In this embodiment, the same-frequency bandwidth peak speed data is used to determine whether the memory should use the same-frequency operation mode or the non-same-frequency operation mode as the memory operation mode. Specifically, the present embodiment pre-calls the startup and exit of all applications or service processes, etc., through the CPU and controls the memory controller to read the memory bandwidth data. Since there may be multiple memory chips in the memory, the memory controller is controlled to acquire the instantaneous read / write speeds of different memory chips during the startup and exit of applications or service processes, etc., and then these memory chips are set to the same-frequency operation mode to obtain the memory bandwidth peak speed in the same-frequency operation mode; that is, the same-frequency bandwidth peak speed data can be obtained. If memory read / write data exceeds the peak rate data of the same frequency bandwidth, it indicates that the application or service process running on the smart terminal has a high demand for memory resources. If the same frequency operation mode is adopted—that is, if the terminal system performs memory read / write operations at a frequency corresponding to a low-frequency memory chip—it cannot achieve maximum performance for many memory chips with frequencies higher than the minimum frequency, resulting in wasted memory resources.To solve this problem, the present embodiment enables maximum performance by setting the memory operation mode to a non-uniform frequency operation mode when the memory read / write data is greater than the same frequency bandwidth peak rate data, thereby causing the memory chips to operate at different operating frequencies. When the memory read / write data is smaller than the same frequency bandwidth peak rate data, it indicates that the application or service process running on the smart terminal does not have a high demand for memory resources, and the memory operation mode is set to a same frequency operation mode, that is, all memory chips are made to operate at the same operating frequency.

[0063] For example, if the memory read / write data is 5532 M / s and the preset same-frequency bandwidth peak rate data is 4509 M / s, it means that the memory read / write data is greater than the same-frequency bandwidth peak rate data, and the memory operation mode is set to non-same-frequency operation mode. If the memory read / write data is 4032 M / s, it indicates that the memory read / write data is smaller than the same-frequency bandwidth peak rate data, and the memory operation mode is set to same-frequency operation mode.

[0064] Step S300, adjusts the operating frequency of the memory based on the operating mode.

[0065] Since the operation mode of the present embodiment is determined based on memory read / write data and the memory read / write data is determined based on execution information generated during the actual execution process of the terminal system, the present embodiment adjusts the operation frequency of the memory according to the operation mode, thereby enabling the operation frequency of the memory to be adjusted according to the execution information, and thus realizes the effect of dynamically adjusting the operation frequency of the memory to achieve maximum performance of the memory and improve the utilization efficiency of the memory.

[0066] In one embodiment, as illustrated in FIG. 4, step S300 includes the following steps.

[0067] Step S301, when the operation mode of the memory is the same frequency operation mode, the frequency corresponding to all memory chips of the memory is obtained, the lowest frequency among the frequencies corresponding to all memory chips is determined, and the lowest frequency is set as the operation frequency of all memory chips of the memory;

[0068] Step S302, when the operation mode of the memory is a non-uniform frequency operation mode, all memory chips of the memory are controlled to operate at a frequency corresponding to each.

[0069] Specifically, when implemented, the same frequency operation mode of this embodiment refers to controlling the terminal system to perform memory read / write operations at a frequency corresponding to a memory chip with a lower frequency. The non-same frequency operation mode refers to all memory chips in the memory operating at different operating frequencies. Accordingly, in this embodiment, when the operation mode of the memory is the same frequency operation mode, the frequency corresponding to all memory chips in the memory is obtained. Next, after determining the lowest frequency among the frequencies corresponding to all memory chips, the lowest frequency is used as the operating frequency of all memory chips in the memory to ensure that the operating frequency of all memory chips in the memory is the same and that the operating frequency is the lowest frequency among all memory chips. When the operation mode of the memory is the non-same frequency operation mode, all memory chips in the memory are controlled to use the frequency corresponding to each as their operating frequency, so that each memory chip can perform at maximum performance and memory resources can be fully utilized.

[0070] For example, as illustrated in FIG. 6, the memory of the present embodiment includes a memory chip of model DDR3-2133 and a memory chip of model DDR4-2666, and the frequency corresponding to the memory chip of model DDR3-2133 is lower than the frequency corresponding to the memory chip of model DDR4-2666. When the memory operation mode is the same frequency operation mode, the memory chips of these two models are controlled to operate with the frequency corresponding to the memory chip of model DDR3-2133 as the operating frequency. When the memory operation mode is the non-same frequency operation mode, the memory chip of model DDR3-2133 and the memory chip of model DDR4-2666 are both controlled to operate with the frequency corresponding to each of them as the operating frequency.

[0071] In summary, the present embodiment first determines memory read / write data of the terminal system based on execution information of the smart terminal. Since the execution information reflects information generated by the terminal system during execution, the terminal system can determine the read / write speed for the memory during execution based on the execution information, that is, obtain memory read / write data. Next, the operation mode of the memory is determined based on the memory read / write data, and finally, the operation frequency of the memory is adjusted based on the operation mode of the memory. Since the operation mode of the present embodiment is determined based on the memory read / write data and the memory read / write data is obtained based on the execution information of the smart terminal, it can be seen that the operation mode of the present embodiment is determined according to the execution information generated during the actual execution process of the terminal system. By adjusting the operation frequency of the memory according to the operation mode in this way, the operation frequency of the memory is adjusted according to the execution information, thereby achieving the effect of dynamically adjusting the operation frequency of the memory, maximizing the performance of the memory, and improving the utilization efficiency of the memory.

[0072] Exemplary equipment:

[0073] As illustrated in FIG. 6, an embodiment of the present application provides a memory operation frequency adjustment device, wherein the device comprises a data acquisition unit (10), a mode determination unit (20), and a frequency adjustment unit (30). Specifically, the data acquisition unit (10) is used to determine memory read / write data of a terminal system based on execution information of a smart terminal, the execution information is used to reflect information generated by the terminal system during execution, and the memory read / write data is used to reflect the read / write speed of the memory of the terminal system. The mode determination unit (20) is used to determine the operation mode of the memory based on the memory read / write data. The frequency adjustment unit (30) is used to adjust the operation frequency of the memory based on the operation mode.

[0074] Based on the above embodiment, the present application further provides a smart terminal capable of providing a principle block diagram as shown in FIG. 7. The smart terminal includes a processor, a memory device, a network interface, a display, and a temperature sensor connected via a system bus. Here, the processor of the smart terminal is used to provide computing and control functions. The memory device of the smart terminal includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the execution of the operating system and the computer program on the non-volatile storage medium. The network interface of the smart terminal is used to communicate with an external terminal via a network connection. A method for adjusting the operating frequency of the memory is implemented when the computer program is executed by the processor. The display of the smart terminal may be a liquid crystal display or an e-ink display, and the temperature sensor of the smart terminal is pre-installed inside the smart terminal to detect the operating temperature of internal equipment.

[0075] It is understood by a person skilled in the art that the principle block diagram shown in FIG. 7 is merely a block diagram of some structure related to the solution of the present application and is not a limitation to the smart terminal to which the solution of the present application is applied, and that a specific smart terminal may include more or fewer parts than shown in the drawing, or may have a combination of specific parts or different installations of parts.

[0076] In one embodiment, a smart terminal is provided that includes a memory device and one or more programs stored in the memory device, and is configured to execute one or more programs including instructions for performing the following operation by one or more processors.

[0077] Based on execution information of a smart terminal, memory read / write data of a terminal system is determined, the execution information is used to reflect information generated by the terminal system during execution, and the memory read / write data is used to reflect the read / write speed of the terminal system's memory;

[0078] Determine the operation mode of the memory based on memory read / write data;

[0079] The operating frequency of the memory is adjusted based on the operating mode.

[0080] A person skilled in the art will understand that all or part of the process of implementing the method of the above embodiment may be completed by commanding the relevant hardware through a computer program, and the computer program may be stored on a non-volatile computer-readable storage medium and may include the process of each embodiment of the above method when executed. Herein, any reference to memory devices, storage, databases, or other media used in each embodiment provided by this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electro-programmable ROM (EPROM), electro-erasable programmable ROM (EEPROM), or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. RAM is provided in various forms, including static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), dual data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link DRAM (SLDRAM), RAMbus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0081] In summary, the present application discloses a method for adjusting the operating frequency of a memory, a smart terminal, and a storage medium. The method comprises the steps of: determining memory read / write data of a terminal system based on execution information of a smart terminal; using the execution information to reflect information generated by the terminal system during execution, and using the memory read / write data to reflect the read / write speed of the memory of the terminal system; determining an operating mode of the memory based on the memory read / write data; and adjusting the operating frequency of the memory based on the operating mode. The present application acquires memory read data of a terminal system based on execution information of a smart terminal, determines the operating mode of the memory based on the memory read data, and finally adjusts the operating frequency of the memory based on the operating mode to achieve maximum performance of the memory and improve the utilization rate of the memory.

[0082] It should be understood that the application of this application is not limited to the examples above, and those skilled in the art may make improvements or modifications in accordance with the description above, and all such improvements and modifications shall fall within the scope of protection of the claims attached to this application.

Claims

Claim 1 A method for adjusting the operating frequency of a memory, comprising: determining memory read / write data of a terminal system based on execution information of a smart terminal, wherein the execution information is used to reflect information generated during execution by the terminal system, and the memory read / write data is used to reflect the read / write speed of the memory of the terminal system; determining an operating mode of the memory based on the memory read / write data; and adjusting the operating frequency of the memory based on the operating mode, wherein the step of determining the operating mode of the memory based on the memory read / write data includes: acquiring preset same frequency bandwidth peak speed data, wherein the same frequency bandwidth peak speed data is used to reflect the instantaneous read / write speed at the same frequency of a memory chip of a different model among the memories; and comparing the memory read / write data with the same frequency bandwidth peak speed data and determining the operating mode of the memory based on the comparison result. Claim 2 A method for adjusting the operating frequency of a memory, wherein, in claim 1, the step of determining memory read / write data of a terminal system based on execution information of the smart terminal comprises: a step of acquiring execution information of the smart terminal; a step of acquiring a system mission being executed by the terminal system based on the execution information, wherein the system mission includes one or more of an application, a service process, or a system function; and a step of determining memory read / write speed data of the terminal system based on the system mission. Claim 3 A method for adjusting the operating frequency of a memory, wherein, in paragraph 2, the step of determining memory read / write speed data of the terminal system based on the system mission comprises: acquiring read / write peak speed data corresponding to when the system mission and the terminal system are started based on the system mission, and using the read / write peak speed data to reflect the maximum read / write speed for its own memory when the system mission and the terminal system are started; acquiring instantaneous read / write speed data for the memory of the system mission when the terminal system performs the system mission; and determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data. Claim 4 A method for adjusting the operating frequency of a memory, wherein, in paragraph 3, the step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data includes the step of obtaining the memory read / write data by summing the read / write peak speed data and the instantaneous read / write speed data. Claim 5 In claim 3, the step of acquiring read / write peak speed data corresponding to when the system mission and the terminal system are started based on the system mission comprises: acquiring a preset memory read / write data table, wherein the memory read / write data table stores read / write peak speed data corresponding to the application, read / write peak speed data corresponding to the service process, read / write peak speed data corresponding to the system function, and read / write peak speed data corresponding to the terminal system; and acquiring read / write peak speed data corresponding to the system mission and the terminal system, respectively, based on the memory read / write data table, wherein the method comprises adjusting the operating frequency of a memory. Claim 6 A method for adjusting the operating frequency of a memory, wherein, in claim 5, the step of acquiring read / write peak speed data corresponding to the system mission and the terminal system, respectively, based on the memory read / write data table, comprises: matching the system mission with the memory read / write data table and matching the terminal system with the memory read / write data table; and acquiring read / write peak speed data corresponding to the application, the service process, or the system function in the system mission and read / write peak speed data corresponding to the terminal system, respectively. Claim 7 A method for adjusting the operating frequency of a memory, wherein, in claim 6, the step of determining the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data includes the step of obtaining the memory read / write data by summing the read / write peak speed data and the instantaneous read / write speed data. Claim 8 A method for adjusting the operating frequency of a memory, further comprising, prior to the step of acquiring the above-mentioned preset memory read / write data table, a step of reading the read / write peak rate for the memory of the terminal system, the read / write peak rate data of each application and each service process in the terminal system, and the read / write peak rate data for the memory when the system function of the terminal system is started; and a step of recording the read / write peak rate for the memory of the terminal system, the read / write peak rate data of each application and each service process in the terminal system, and the read / write peak rate data for the memory when the system function of the terminal system is started to form the memory read / write data table. Claim 9 delete Claim 10 A method for adjusting the operating frequency of a memory according to claim 1, wherein the step of determining the operating mode of the memory based on the comparison result by comparing the memory read / write data and the same frequency bandwidth peak speed data comprises: a step of setting the operating mode of the memory to a non-same frequency operating mode when the memory read / write data is greater than the same frequency bandwidth peak speed data; and a step of setting the operating mode of the memory to a same frequency operating mode when the memory read / write data is smaller than the same frequency bandwidth peak speed data. Claim 11 A method for adjusting the operating frequency of a memory according to claim 10, wherein the step of adjusting the operating frequency of the memory based on the operating mode comprises: when the operating mode of the memory is a same frequency operating mode, acquiring a frequency corresponding to all memory chips of the memory, determining a minimum frequency among the frequencies corresponding to all memory chips, and setting the minimum frequency as the operating frequency of all memory chips of the memory; and when the operating mode of the memory is a non-same frequency operating mode, controlling all memory chips of the memory to set their respective corresponding frequencies as operating frequencies. Claim 12 In claim 11, the memory comprises a first model memory chip and a second model memory chip, wherein the frequency corresponding to the first model memory chip is lower than that of the second model memory chip; and when the operation mode of the memory is a same frequency operation mode, the step of acquiring a frequency corresponding to all memory chips of the memory, determining a minimum frequency among the frequencies corresponding to all memory chips, and making the minimum frequency the operation frequency of all memory chips of the memory comprises the step of controlling the first model memory chip and the second model memory chip to have the frequency corresponding to the first model memory chip as the operation frequency when the operation mode of the memory is a same frequency operation mode. Claim 13 A method for adjusting the operating frequency of a memory according to claim 12, wherein, when the operating mode of the memory is a non-uniform frequency operating mode, the step of controlling all memory chips of the memory to each have a frequency corresponding to them as the operating frequency includes the step of controlling a first model memory chip and a second model memory chip to each have a frequency corresponding to them as the operating frequency when the operating mode of the memory is a non-uniform frequency operating mode. Claim 14 A memory operation frequency adjustment device comprising: a data acquisition unit used to determine memory read / write data of a terminal system based on execution information of a smart terminal, wherein the execution information is used to reflect information generated during execution by the terminal system, and the memory read / write data is used to reflect the read / write speed of the memory of the terminal system; a mode determination unit used to determine the operation mode of the memory based on the memory read / write data; and a frequency adjustment unit used to adjust the operation frequency of the memory based on the operation mode, wherein the mode determination unit comprises: an acquisition sub-unit used to acquire preset same frequency bandwidth peak speed data; and a comparison sub-unit used to determine the operation mode of the memory based on a comparison result by comparing the memory read / write data with the same frequency bandwidth peak speed data. Claim 15 In claim 14, the data acquisition unit comprises: a first acquisition sub-unit used to acquire execution information of the smart terminal; a second acquisition sub-unit used to acquire a system mission being performed by the terminal system based on the execution information, wherein the system mission includes one or more of an application, a service process, or a system function; and a determination sub-unit used to determine memory read / write speed data of the terminal system based on the system mission, wherein the memory operation frequency adjustment device. Claim 16 In claim 15, the above-mentioned decision sub-unit comprises: a first acquisition module used to acquire corresponding read / write peak speed data when the system mission and the terminal system are started based on the system mission, and the read / write peak speed data is used to reflect the maximum read / write speed for its own memory when the system mission and the terminal system are started; a second acquisition module used to acquire instantaneous read / write speed data for the memory of the system mission when the terminal system performs the system mission; and a decision module used to determine the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data, wherein the operating frequency adjustment device of the memory comprises: a first acquisition module used to acquire corresponding read / write peak speed data when the system mission and the terminal system are started; a second acquisition module used to acquire instantaneous read / write speed data for the memory read / write data when the terminal system performs the system mission; and a decision module used to determine the memory read / write data based on the read / write peak speed data and the instantaneous read / write speed data. Claim 17 delete Claim 18 In claim 14, the memory operation mode includes a same-frequency operation mode and a non-same-frequency operation mode, and the frequency adjustment unit comprises: an acquisition sub-unit used to acquire a frequency corresponding to all memory chips of the memory when the operation mode of the memory is a same-frequency operation mode, determine a minimum frequency among the frequencies corresponding to all memory chips, and set the minimum frequency as the operation frequency of all memory chips of the memory; and a control sub-unit used to control all memory chips of the memory to set their respective corresponding frequencies as the operation frequencies when the operation mode of the memory is a non-same-frequency operation mode, thereby forming a memory operation frequency adjustment device. Claim 19 A smart terminal comprising a memory device and one or more programs stored in the memory device; and configured to execute said one or more programs by one or more processors, said one or more programs comprising a method according to any one of claims 1 to 8 and claims 10 to 13. Claim 20 A non-transient computer-readable storage medium, wherein when a command of said storage medium is executed by a processor of said electronic equipment, the electronic equipment is able to perform a method according to any one of claims 1 to 8 and claims 10 to 13.