Electronic device and its repair method

Abstract

An electronic device comprises a plurality of substrate electrodes on a substrate, wherein the substrate electrodes include initial electrodes and spare electrodes; a bonding material covering the initial electrodes and the spare electrodes; module structures each provided on first initial electrodes among the initial electrodes; and solders interposed between each of the first initial electrodes and each of the module structures. The spare electrodes include second spare electrodes, and the module structures are not provided on the second spare electrodes, and the bonding material on the first initial electrodes is more hardened than the bonding material on the second spare electrodes.

Description

Technology Field

[0001] The present invention relates to an electronic device comprising a display, a semiconductor, a sensor, an active component and / or a passive component, and a method for repairing the same. Background Technology

[0002] Anisotropic Conductive Paste (ACP) and / or Anisotropic Conductive Film (ACF) can be used in the process of bonding an electronic module to a substrate in order to manufacture electronic devices including light-emitting devices, semiconductors, sensors, active devices and / or passive devices. ACP and ACF are composed of polymers, and after the bonding process, the polymers constituting ACP and ACF harden, making it difficult to remove ACP and ACF. Consequently, the time required for the repair process to replace a defective device bonded to a substrate with ACP or ACF with a normal device is prolonged, resulting in a decrease in process yield and an increase in product price. The problem to be solved

[0003] The technical problem that the present invention aims to solve is to provide an electronic device comprising spare electrodes and a bonding material with low laser absorption rate to reduce the time required for the repair process.

[0004] Another technical objective of the present invention is to provide a method for repairing electronic devices through laser irradiation, which simplifies the repair process and reduces the required time. means of solving the problem

[0005] An electronic device according to the present invention may comprise a plurality of substrate electrodes on a substrate, wherein the substrate electrodes may include initial electrodes and spare electrodes; a bonding material covering the initial electrodes and the spare electrodes; module structures provided respectively on first initial electrodes among the initial electrodes; and solders interposed between each of the first initial electrodes and each of the module structures. The spare electrodes may include second spare electrodes, and the module structures may not be provided on the second spare electrodes, and the bonding material on the first initial electrodes may be more hardened than the bonding material on the second spare electrodes.

[0006] A method for repairing an electronic device according to the present invention may include an electronic device, wherein the electronic device comprises a plurality of substrate electrodes on a substrate, wherein the substrate electrodes include initial electrodes and spare electrodes, a bonding material covering the initial electrodes and spare electrodes, module structures electrically connected to the initial electrodes, and initial solders between the initial electrodes and the module structures, wherein the bonding material on the initial electrodes is more hardened than the bonding material on the spare electrodes; destroying at least one defective module structure among the module structures; placing new module structures on corresponding spare electrodes among the spare electrodes; and irradiating the new module structures with a laser to harden the bonding material on the corresponding spare electrodes. Effects of the invention

[0007] According to the concept of the present invention, by providing spare electrodes and a bonding material with a low laser absorption rate on a substrate of an electronic device, a repair process can be performed via laser irradiation without a separate step of removing the hardened bonding material between the defective module structures and the initial electrodes. In addition, by simultaneously providing new module structures, the time and cost required for the repair process are reduced, and as a result, the production yield of the electronic device product can be increased. Brief explanation of the drawing

[0008] FIG. 1 is a plan view showing an electronic device according to embodiments of the present invention. FIG. 2 is a cross-sectional view along A-A' of FIG. 1, showing an electronic device according to embodiments of the present invention. FIG. 3 is a drawing showing an electronic device according to embodiments of the present invention, and is an enlarged view according to part P of FIG. 2. FIGS. 4 and FIGS. 5 are drawings showing an electronic device according to embodiments of the present invention, and are cross-sectional views along A-A' of FIG. 1. FIGS. 6a and FIGS. 6b are plan views showing an electronic device according to embodiments of the present invention. FIG. 7 is a drawing showing an electronic device according to embodiments of the present invention, and is a cross-sectional view according to BB' of FIG. 6a and C-C' of FIG. 6b. FIGS. 8 and 9 are drawings illustrating a repair method for an electronic device according to embodiments of the present invention, corresponding to part P of FIG. 2. FIGS. 10 to 13 are cross-sectional views illustrating a repair method for an electronic device according to embodiments of the present invention. Figure 14 is a graph showing the change in thickness of the metal compound patterns of Figure 4 according to the number of laser irradiations. FIGS. 15a to 15d are the results of verifying whether an electronic device operates following repeated irradiation with a laser. Specific details for implementing the invention

[0009] To fully understand the structure and effects of the present invention, preferred embodiments of the present invention are described with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms and various modifications can be made. The description of these embodiments is provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. In the attached drawings, the components are depicted enlarged from their actual size for convenience of explanation, and the proportions of each component may be exaggerated or reduced.

[0010] FIG. 1 is a plan view showing an electronic device according to embodiments of the present invention. FIG. 2 is a cross-sectional view along A-A' of FIG. 1, showing an electronic device according to embodiments of the present invention. FIG. 3 is an enlarged view along section P of FIG. 2, showing an electronic device according to embodiments of the present invention.

[0011] Referring to FIGS. 1 to 3, a plurality of substrate electrodes (20) may be provided on a substrate (10). In a planar view, the substrate electrodes (20) may be spaced apart from each other along a first direction (D1) and a second direction (D2) parallel to the upper surface of the substrate (10). The first direction (D1) and the second direction (D2) may intersect each other. However, this is merely illustrative and the present invention is not limited thereto.

[0012] The above substrate electrodes (20) may include initial electrodes (20i) and spare electrodes (20e). The ratio of the number of the initial electrodes (20i) and the spare electrodes (20e) may be 1:1.

[0013] Each of the above spare electrodes (20e) may be substantially identical to the corresponding initial electrodes (20i) among the above initial electrodes (20i). During the repair process, each of the above spare electrodes (20e) may replace the corresponding initial electrodes (20i). Each of the above spare electrodes (20e) may be positioned adjacent to the corresponding initial electrode (20i), but is not limited thereto.

[0014] For example, two initial electrodes (20i) may be arranged, and two spare electrodes (20e) corresponding to the two initial electrodes (20i) may be arranged adjacent to the two initial electrodes (20i). The distance between the two initial electrodes (20i) and the two spare electrodes (20e) may be closer than the distance between the two initial electrodes (20i) and other spare electrodes (20e) that do not correspond thereto.

[0015] The above initial electrodes (20i) may include first initial electrodes (20i1). Module structures (40) may each be provided on the first initial electrodes (20i1) among the above initial electrodes (20i).

[0016] The above spare electrodes (20e) may include second spare electrodes (20e2). The module structures (40) may not be provided on the second spare electrodes (20e2).

[0017] The above module structures (40) may include electronic modules (41). The electronic modules (41) may include any one of a semiconductor, a sensor, an active component, or a passive component. For example, the above module structures (40) may include the electronic modules (41) including an active component such as a micro LED chip. The electronic modules (41) may have high thermal conductivity, and accordingly, the thermal conductivity of the above module structures (40) may be high.

[0018] Solders (50) may be interposed between each of the first initial electrodes (20il) and each of the module structures (40). The solders (50) may be further provided on each of the second spare electrodes (20e2).

[0019] The above solders (50) may include at least one of Sn or In. The above solders (50) may include a composition including at least one of Sn or In, and, for example, may include at least one of Sn, SnAg, SnAgCu, SnIn, In, InBi, SnBi, InBi, and Sn.

[0020] The solders (50) on each of the second spare electrodes (20e2) may include oxide films (55) on their surface. The oxide films (55) may include the same metal as the solders (50).

[0021] Metal compound patterns (45) may be further interposed between each of the module structures (40) and each of the solders (50). The metal compound patterns (45) may contain the same metal as the solders (50). The thickness (t2) of the metal compound patterns (45) may be greater than 0 µm and less than or equal to 2 µm. If the thickness of the metal compound patterns (45) is greater than 2 µm, the thickness of the solders (50) may be reduced, and the electrical characteristics of the electronic device may be degraded.

[0022] The above module structures (40) may further include module electrodes (42). The module electrodes (42) may be adjacent to the metal compound patterns (45). In detail, the module electrodes (42) may be in contact with the metal compound patterns (45). The electronic modules (41) may be provided on the module electrodes (42), and the module electrodes (42) may be interposed between the electronic modules (41) and the metal compound patterns (45). The thickness (t3) of the module electrodes (42) may be 10 nm or more. The module electrodes (42) may have high thermal conductivity, and accordingly, the thermal conductivity of the module structures (40) may be high.

[0023] The above substrate electrodes (20) can be covered with a bonding material (30). That is, the bonding material (30) can cover the initial electrodes (20i) and the spare electrodes (20e). The bonding material (30) can further cover the solders (50) and the module electrodes (42).

[0024] According to embodiments of the present invention, the bonding material (30) may be in the form of a paste. When the bonding material (30) is in the form of a paste, the bonding material (30) may be provided only in the regions on the substrate (10) where the substrate electrodes (20) are provided and in some surrounding regions of the substrate electrodes (20). In other words, the bonding material (30) may not be provided on the remaining regions of the substrate (10), excluding the regions on which the substrate electrodes (20) are provided and in some surrounding regions of the substrate electrodes (20).

[0025] The bonding material (30) may include a base material, a reducing agent, and a curing agent. The base material may include a thermosetting resin. The thermosetting resin may include, for example, at least one of epoxy, phenoxy, bismaleimide, unsaturated polyester, urethane, urea, phenol-formaldehyde, vulcanized rubber, melamine resin, polyimide, epoxy novolac resin, cyanate ester, and silicone-based resin, but is not limited thereto. The bonding material (30) may be cured when the temperature rises due to the thermosetting resin. The base material may further include an acrylic resin. The base material may not include a halogen.

[0026] The reducing agent may include at least one of a hydroxyl group (-OH) or a carboxyl group (-COOH). The curing agent may react with a base material to be cured. The curing agent may include, for example, at least one of aliphatic amine, aromatic amine, cycloaliphatic amine, phenalkamine, imidazole, carboxylic acid, anhydride, polyamide-based hardeners, phenolic curing agents, and waterborne curing agents, but is not limited thereto.

[0027] The bonding material (30) may be transparent. Therefore, when a laser is irradiated onto the bonding material (30), the absorption rate of the bonding material (30) for the laser may be low. Specifically, for the laser having a wavelength of 200 nm or more and 2 µm or less, the laser absorption rate of the bonding material (30) may be greater than 0% and less than 30%. The thickness (t1) of the bonding material (30) may be greater than 0 µm and less than 70 µm. The laser absorption rate of the bonding material (30) may be lower than the laser absorption rate of the module structures (40). These characteristics may be utilized in the repair process of an electronic device, and details regarding this are explained in the example of the method for repairing an electronic device.

[0028] The bonding material (30) may have different degrees of hardening on each of the initial electrodes (20i) and each of the spare electrodes (20e). Specifically, the bonding material (30a) on the first initial electrodes (20i1) may be more hardened than the bonding material (30b) on the second spare electrodes (20e2).

[0029] By curing the bonding material (30a) on the first initial electrodes (20il), the module structures (40) bonded on the first initial electrodes (20il) can be fixed. Since the bonding material (30b) on the second spare electrodes (20e2) is not cured, a separate process of removing the cured bonding material (30a) can be omitted during the repair process described with reference to FIGS. 8 to 13. Accordingly, the time required for the repair process can be shortened.

[0030] FIGS. 4 and FIGS. 5 are drawings showing an electronic device according to embodiments of the present invention, and are cross-sectional views along A-A' of FIG. 1.

[0031] Referring to FIGS. 2, 4 and 5, the initial electrodes (20i) may further include second initial electrodes (20i2). The module structures (40) may not be provided on the second initial electrodes (20i2). The spare electrodes (20e) may further include first spare electrodes (20e1). The module structures (40) may each be provided on the first spare electrodes (20e1). The bonding material (30a) on the first spare electrodes (20e1) may be more hardened than the bonding material (30b) on the second spare electrodes (20e2).

[0032] The module structure (40) may be provided on at least one of the initial electrodes (20i) or the spare electrode (20e) corresponding to the initial electrode (20i). That is, when one of the initial electrodes (20i) is the second initial electrode (20i2), the spare electrode (20e) corresponding to the second initial electrode (20i) may be the first spare electrode (20e1). When one of the initial electrodes (20i) is the first initial electrode (20i1), the spare electrode (20e) corresponding to the first initial electrode (20i1) may be either the first spare electrode (20e1) or the second spare electrode (20e2).

[0033] For example, referring to FIG. 2, the initial electrodes (20i) may be first initial electrodes (20i1). Accordingly, the module structures (40) may each be provided on the initial electrodes (20i, i.e., the first initial electrodes). In this case, the spare electrodes (20e) corresponding to the initial electrodes (20i, i.e., the first initial electrodes) may be second spare electrodes (20e2). The module structures (40) may not be provided on the corresponding spare electrodes (20e).

[0034] For example, referring to FIG. 4, the initial electrodes (20i) may be first initial electrodes (20i1). In this case, some of the spare electrodes (20e) corresponding to the initial electrodes (20i) may be first spare electrodes (20e1). The remainder of the corresponding spare electrodes (20e) may be second spare electrodes (20e2).

[0035] As another example, referring to FIG. 5, some of the initial electrodes (20i) may be first initial electrodes (20i1). The spare electrodes (20e) corresponding to some of the initial electrodes (20i) may be second spare electrodes (20e2). The remainder of the initial electrodes (20i) may be second initial electrodes (20i2). The spare electrodes (20e) corresponding to the remainder of the initial electrodes (20i) may be first spare electrodes (20e1).

[0036] FIGS. 6a and 6b are plan views illustrating an electronic device according to embodiments of the present invention. FIG. 7 is a drawing illustrating an electronic device according to embodiments of the present invention, and is a cross-sectional view along BB' of FIG. 6a and C-C' of FIG. 6b. For brevity of the description, descriptions of content overlapping with FIGS. 1 to 3 are omitted.

[0037] Referring to FIGS. 6a, 6b and FIG. 7, the bonding material (30) may be in the form of a film. When the bonding material (30) is in the form of a film, the bonding material (30) may cover at least a portion of the substrate (10).

[0038] For example, referring to FIGS. 6a and FIGS. 7, the bonding material (30) may be provided over the entire area of ​​the substrate (10) to cover the substrate electrodes (20).

[0039] As another example, referring to FIGS. 6b and FIGS. 7, the bonding material (30) may be provided to have a line shape that extends in the first direction (D1) and is spaced apart from each other in the second direction (D2). In this case, the bonding material (30) may cover substrate electrodes arranged in the first direction (D1) and substrates between them. However, this is merely illustrative and the invention is not limited thereto.

[0040] FIGS. 8 and 9 are drawings illustrating a method for repairing an electronic device according to embodiments of the present invention, corresponding to part P of FIG. 2. Hereinafter, a method for repairing an electronic device according to embodiments of the present invention will be described with reference to FIGS. 8 and 9. For brevity of the description, descriptions of content that overlaps with FIGS. 1 to 3 are omitted.

[0041] Referring to FIG. 8, an electronic device for carrying out a repair process may be provided. The electronic device may include a plurality of substrate electrodes (20) on a substrate (10). The substrate electrodes (20) may include initial electrodes (20i) and spare electrodes (20e), and the ratio of the number of initial electrodes (20i) and spare electrodes (20e) may be 1:1.

[0042] The electronic device may include module structures (40). The module structures (40) may each be provided on the initial electrodes (20i) and may each be electrically connected to the initial electrodes (20i). The module structures (40) may not be provided on the spare electrodes (20e). The module structures (40) may include electronic modules (41) and module electrodes (42). The electronic modules (41) and module electrodes (42) may have high thermal conductivity.

[0043] The above electronic device may include solders (50). The solders (50) may include at least one of Sn or In. The solders (50) may include a composition including at least one of Sn or In, and, for example, may include at least one of Sn, SnAg, SnAgCu, SnIn, In, InBi, SnBi, InBi, and Sn.

[0044] Some of the solders (50) may include initial solders (50i). The initial solders (50i) may be interposed between the initial electrodes (20i) and the module structures (40). Metal compound patterns (45) may be interposed between each of the module structures (40) and each of the initial solders (50i). The metal compound patterns (45) may include a metal of the same type as the solders (50). The remainder of the solders (50) may include spare solders (50e). The spare solders (50e) may be provided on the spare electrodes (20e) or the novel module structures (40n) of FIG. 9. Oxide films (55) may be provided on the surface of each of the spare solders (50e).

[0045] The electronic device may include a bonding material (30) covering the initial electrodes (20i) and the spare electrodes (20e). The bonding material (30) may be in the form of a paste or a film. The bonding material (30) may include a base material, a reducing agent, and a curing agent.

[0046] Among the bonding materials (30), the bonding material (30a) on the initial electrodes (20i) may be more hardened than the bonding material (30b) on the spare electrodes (20e). The bonding material (30a) on the initial electrodes (20i) may have undergone heat-induced hardening.

[0047] More specifically, a laser may be irradiated onto the module structures (40) mounted on the initial electrodes (20i) so that the module structures (40) are electrically connected on the initial electrodes (20i). When the laser is irradiated onto the module structures (40), the module structures (40), the solders (50), the substrate electrodes (20), and the bonding material (30a) in the area where the laser was irradiated may absorb the laser and generate heat. Due to the heat generated at this time, the bonding material (30a) may be activated. The activation of the bonding material (30a) may include the bonding material (30a) hardening. Accordingly, the bonding material (30a) on the initial electrodes (20i) may be hardened due to the laser irradiation. However, the bonding material (30a) may be transparent, and accordingly, the amount of heat generated due to the laser absorption by the bonding material (30a) itself may be small.

[0048] In contrast, for example, the laser may not be irradiated onto the bonding material (30b) on the spare electrodes (20e) that are not electrically connected to the module structures (40). As a result, the bonding material (30b) may not be cured.

[0049] As another example, the laser may be irradiated onto the bonding material (30b) on the spare electrodes (20e), yet the bonding material (30b) may not be cured. In other words, the amount of heat required for curing may not be provided to the bonding material (30b) on the spare electrodes (20e). This is because the amount of laser absorbed in the region on the spare electrodes (20e) may be small, as the module structures (40) are not electrically connected on the spare electrodes (20e). The bonding material (30b) may be transparent, and accordingly, the laser absorption rate of the bonding material (30b) may be lower than the laser absorption rate of the module structures (40). As a result, the amount of heat generated due to laser absorption by the bonding material (30b) itself may be small.

[0050] Since the bonding material (30b) on the spare electrodes (20e) is not cured, it may be easy to electrically connect new module structures (40) on the spare electrodes (20e). That is, a repair process for electrically connecting new module structures (40) on the spare electrodes (20e) can be carried out without a separate processing process for the cured bonding material (30a).

[0051] The laser absorption rate of the bonding material (30) may be greater than 0% and less than 30% for the laser having a wavelength of 200 nm or more and 2 µm or less. When the laser absorption rate of the bonding material (30) is 30% or more, the bonding material (30b) on the spare electrodes (20e) may be hardened due to the self-heating of the bonding material (30).

[0052] The thickness (t1) of the bonding material (30) may be greater than 0 µm and less than or equal to 70 µm. If the thickness (t1) of the bonding material (30) is greater than 70 µm, the amount of laser absorption by the bonding material (30) increases, and the bonding material (30b) on the spare electrodes (20e) may be cured.

[0053] After the electronic device is provided, at least one defective module structure (40b) among the module structures (40) may be destroyed. Destroying the defective module structures (40b) may, for example, involve severing the electrical connection between the defective module structures (40b) and the initial electrodes (20i). Destroying the defective module structures (40b) may, for another example, involve separating the defective module structures (40b) from the initial electrodes (20i). However, this is merely illustrative and the invention is not limited thereto.

[0054] Referring to FIG. 9, new module structures (40n) may be placed on corresponding spare electrodes (20e) among the spare electrodes (20e). The new module structures (40n) may include new electronic modules (41n) and new module electrodes (42n). The corresponding spare electrodes (20e) may be substantially identical to the initial electrodes (20i) to which the defective module structures (40b) are connected. The new module structures (40n) may be electrically connected to the corresponding spare electrodes (20e) through a repair process. By placing the new module structures (40n), spare solders (50e) may be interposed between the corresponding spare electrodes (20e) and the new module structures (40n).

[0055] Subsequently, a laser (L) may be irradiated onto the new module structures (40n) from a laser light source (80). The laser (L) may be irradiated onto at least one of the new module structures (40n). The laser (L) may be a surface laser. The laser (L) irradiation time may be within 20 seconds. The wavelength of the laser (L) may be 200 nm or more and 2 µm or less. The absorption rate of the laser (L) of the bonding material (30) may be greater than 0% and less than 30%.

[0056] As the laser (L) is absorbed by the new module structures (40n), the spare solders (50e), the corresponding spare electrodes (20e), and the bonding material (30b) of FIG. 8, the bonding material (30a) on the corresponding spare electrodes (20e) can be activated. By activating the bonding material (30a), the reducing agent contained in the bonding material (30a) can remove the oxide films (55) of FIG. 8 on the surface of the spare solders (50e). Additionally, the bonding material (30a) between each of the new module electrodes (42n) of the new module structures (40n) and each of the spare solders (50e) can be pushed away. As a result, metal compound patterns (45) can be formed between each of the new module electrodes (42n) and each of the spare solders (50e). The metal compound patterns (45) may be formed by the reaction of each of the new module electrodes (42n) and each of the spare solders (50e). The metal compound patterns (45) may be interposed between each of the new module structures (40n) and each of the spare solders (50e). The metal compound patterns (45) may contain the same metal as the spare solders (50). After the reaction of the new module electrodes (42n) and the spare solders (50e), the thickness of the new module electrodes (42n) may be 10 nm or more.

[0057] At the same time, the bonding material (30a) can be cured by heat. As the bonding material (30a) is cured by heat, the new module structures (40n) can be fixed on the corresponding spare electrodes (20e).

[0058] Although not illustrated, the amount of heat generated on the spare electrodes (20e) to which the new module structures (40n) are not connected may be less than the amount of heat generated on the corresponding spare electrodes (20e). Accordingly, the bonding material (30b) on the spare electrodes (20e) to which the new module structures (40n) are not connected may not harden. As a result, even if the repair process is repeated two or more times, a new repair process can be carried out on the spare electrodes (20e) to which the new module structures (40n) are not connected without separate treatment of the hardened bonding material (30a).

[0059] FIGS. 10 and 11 are cross-sectional views illustrating a method for repairing an electronic device according to embodiments of the present invention. For brevity of the description, descriptions of content overlapping with FIGS. 1 to 3, FIGS. 8, and FIGS. 9 are omitted.

[0060] Referring to FIG. 10, the electronic device may include at least one of the defective module structures (40b).

[0061] Referring to FIG. 11, the new module structures (40n) may be placed on the corresponding spare electrodes (20e) among the spare electrodes (20e). The corresponding spare electrodes (20e) may be substantially identical to the initial electrodes (20i) to which the defective module structures (40b) are connected, and may replace the initial electrodes (20i) to which the defective module structures (40b) are connected. There may be at least one new module structure (40n). The ratio of the number of the new module structures (40n) to the number of the defective module structures (40b) may be 1:1.

[0062] Subsequently, a laser (L) may be irradiated onto the new module structures (40n) from the laser light source (80). The laser (L) may be irradiated simultaneously onto at least one of the new module structures (40n). For example, the laser (L) may be irradiated simultaneously onto all of the new module structures (40n).

[0063] At the same time, the laser (L) may also be irradiated onto the spare electrodes (20e) where the module structures (40) on the initial electrodes (20i) and the new module structures (40n) are not connected. In this case, the bonding material (30a) on the initial electrodes (20i) may remain hardened. Conversely, the bonding material (30b) on the spare electrodes (20e) where the new module structures (40n) are not connected may not remain hardened. As a result, even if the repair process is repeated two or more times, a new repair process can be performed on the spare electrodes (20e) where the new module structures (40n) are not connected, without separate treatment of the hardened bonding material (30a). According to the embodiments, a repair process for a plurality of defective module structures (40b) can be performed simultaneously.

[0064] FIGS. 12 and 13 are cross-sectional views illustrating a repair method for an electronic device according to embodiments of the present invention. For brevity of the description, descriptions of content overlapping with FIGS. 1 to 3, FIGS. 8, and FIGS. 9 are omitted.

[0065] Referring to FIG. 12, a quartz (Q) may be provided between the laser light source (80) and the new module structures (40n). If the electronic device is thin or severely bent, pressure may be applied to the electronic device through the quartz (Q). The laser (L) irradiated onto the new module structures (40n) may pass through the quartz (Q) and irradiate onto the new module structures (40n). During the repair process, in order to minimize the influence of the quartz (Q) on the laser (L), the quartz (Q) may have a low absorption rate of the laser (L).

[0066] Referring to FIG. 13, the quartz (Q) may be provided on at least one of the novel module structures (40n). Accordingly, the laser (L) may pass through the quartz (Q) and simultaneously irradiate at least one of the novel module structures (40n). At the same time, the laser (L) may pass through the quartz (Q) and irradiate the module structures (40) on the initial electrodes (20i) and the spare electrodes (20e) on which the novel module structures (40n) are not connected.

[0067] FIG. 14 is a graph showing the change in thickness of the metal compound patterns (45) of FIG. 4 according to the number of laser irradiations.

[0068] Referring to FIG. 14, the thickness (t3) of the metal compound patterns (45) of FIG. 3 increases with the laser irradiation. The metal compound patterns (45) have a thickness of 432 nm when irradiated once, 652 nm when irradiated five times, and 1054 nm when irradiated ten times. That is, even if the repair of the electronic device according to the embodiments of the present invention is performed 10 times, the thickness (t2) of the metal compound patterns (45) may be 2 µm or less. Accordingly, the amount of thickness reduction of the solders (50) of FIG. 3 due to the formation of the metal compound patterns (45) may be 2 µm or less, and as a result, the electrical characteristics of the electronic device may not deteriorate.

[0069] FIGS. 15a to 15d are the results of verifying whether an electronic device operates following repeated irradiation with a laser.

[0070] Referring to FIG. 15a, first LED chips arranged in a 5x5 grid are electrically connected to substrate electrodes in a first region (R1). The first LED chips are electrically connected to the substrate electrodes through laser irradiation. The laser is irradiated over the entire area of ​​the substrate.

[0071] Referring to FIG. 15b, it is confirmed that the first LED chips are lit. That is, it indicates that the first LED chips can be electrically connected to the substrate electrodes through the laser irradiation.

[0072] Referring to FIG. 15c, the second LED chips arranged in a 5x5 grid were further electrically connected to the substrate electrodes in the second region (R2) and then lit. The second LED chips in the second region (R2) were connected to the substrate electrodes through a laser irradiated over the entire area of ​​the substrate. In the first region (R1), it can be confirmed that the first LED chips operate normally even though the laser was irradiated to the first LED chips one more time. In the second region (R2), the laser was irradiated once before and after the arrangement of the second LED chips, and the second LED chips also operate normally at this time.

[0073] Referring to FIG. 15d, the third LED chips arranged in a 5x5 grid were further electrically connected to the substrate electrodes in the third region (R3) and then lit. The third LED chips in the third region (R3) were connected to the substrate electrodes through a laser irradiated over the entire area of ​​the substrate. Although the laser was irradiated after the first LED chips and the second LED chips were electrically connected to the substrate electrodes, it can be confirmed that the first LED chips and the second LED chips operate normally. In the third region (R3), the laser was irradiated twice before the third LED chips were placed and once after they were placed, and the third LED chips also operate normally at this time.

[0074] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention may be implemented in other specific forms without altering its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0075] 10: Substrate 20: Substrate electrode 20i: Initial electrode 20e: Redundant electrode 20i1: First initial electrode 20i2: Second initial electrode 20e1: First spare electrode 20e2: Second spare electrode 30: Bonding material 40: Modular structure 40b: Defective module structure 40n: New module structure 41: Electronic module 42: Module electrode 45: Metal compound patterns 50: Solder L: Laser Q: Quartz

Claims

Claim 1 A plurality of substrate electrodes on a substrate, wherein the substrate electrodes include initial electrodes and spare electrodes; a bonding material covering the initial electrodes and the spare electrodes; wherein the initial electrodes include first initial electrodes, and module structures provided on each of the first initial electrodes; An electronic device comprising solders interposed between each of the first initial electrodes and each of the module structures, wherein the spare electrodes include second spare electrodes, the module structures are not provided on the second spare electrodes, the bonding material on the first initial electrodes is more hardened than the bonding material on the second spare electrodes, the initial electrodes and the spare electrodes are spaced apart from each other along first and second directions parallel to the substrate, the ratio of the number of the initial electrodes and the spare electrodes is 1:1, and in the first direction, each of the spare electrodes is spaced apart from each of the corresponding initial electrodes and arranged side by side, and the distance between one of the initial electrodes corresponding in the first direction and one of the spare electrodes is smaller than the distance between one of the initial electrodes and another of the spare electrodes that does not correspond thereto. Claim 2 delete Claim 3 An electronic device according to claim 1, wherein, for a laser having a wavelength of 200 nm or more and 2 µm or less, the absorption rate of the bonding material for the laser is greater than 0% and less than 30%. Claim 4 An electronic device according to claim 1, wherein the thickness of the bonding material is greater than 0 µm and less than or equal to 70 µm. Claim 5 In claim 1, the bonding material is in the form of a paste or film for an electronic device. Claim 6 In claim 1, the bonding material comprises a thermosetting resin, a reducing agent, and a curing agent, for an electronic device. Claim 7 In claim 1, the solders comprise at least one of Sn or In in an electronic device. Claim 8 An electronic device according to claim 1, further comprising metal compound patterns interposed between each of the module structures and each of the solders, wherein the metal compound patterns comprise the same metal as the solders. Claim 9 An electronic device according to claim 8, wherein the thickness of the metal compound patterns is greater than 0 µm and less than or equal to 2 µm. Claim 10 An electronic device according to claim 1, wherein the initial electrodes further include second initial electrodes and the spare electrodes further include first spare electrodes, wherein the module structures are not provided on the second initial electrodes but are each provided on the first spare electrodes. Claim 11 In claim 10, the bonding material on the first spare electrodes is a hardened electronic device than the bonding material on the second spare electrodes. Claim 12 An electronic device is provided, wherein the electronic device comprises a plurality of substrate electrodes on a substrate, the substrate electrodes including initial electrodes and spare electrodes, a bonding material covering the initial electrodes and the spare electrodes, module structures electrically connected to the initial electrodes, and initial solders between the initial electrodes and the module structures, wherein the bonding material on the initial electrodes is more hardened than the bonding material on the spare electrodes; destroying at least one defective module structure among the module structures; and placing new module structures on each of the spare electrodes corresponding to each of the defective module structures among the spare electrodes. A method for repairing an electronic device comprising irradiating a laser onto the new module structures to cure the bonding material on the corresponding spare electrodes, wherein the ratio of the number of the initial electrodes and the spare electrodes is 1:1, the wavelength of the laser is 200 nm or more and 2 µm or less, the absorption rate of the bonding material for the laser is greater than 0% and less than 30%, and the absorption rate of the bonding material for the laser is lower than the absorption rate of the module structures for the laser. Claim 13 delete Claim 14 delete Claim 15 In claim 12, the laser is simultaneously irradiated onto at least one of the novel module structures in a method for repairing an electronic device. Claim 16 A method for repairing an electronic device in which, in claim 15, the laser is simultaneously irradiated onto the module structures on the initial electrodes. Claim 17 A method for repairing an electronic device according to claim 12, further comprising providing spare solders on the spare electrodes or the new module structures, wherein oxide films on the surface of the spare solders are removed by irradiating with the laser. Claim 18 A method for repairing an electronic device according to claim 17, wherein the new module structures include new module electrodes, and further comprises forming metal compound patterns between each of the new module electrodes and each of the spare solders, wherein the metal compound patterns include the same metal as the spare solders. Claim 19 A method for repairing an electronic device according to claim 12, wherein the laser irradiated onto the new module structures passes through a quartz provided between the laser light source and the new module structures and is irradiated onto the new module structures. Claim 20 In claim 19, the above quartz is a repair method for an electronic device provided on at least one of the above novel module structures.

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