Heat Dissipation Substrate Having Excellent Heat Dissipation Efficiency and Strong Interlayer Bonding Force and Its Manufacturing Method

Abstract

A heat dissipation substrate having excellent heat dissipation efficiency and strong interlayer bonding strength, and a method for manufacturing the same are disclosed. According to one aspect of the present embodiment, a heat dissipation substrate is provided, characterized by comprising a substrate having structurally improved bonding strength and a space for the remaining components within the heat dissipation substrate to be located therein, a heat dissipation layer that releases generated heat to the outside, and a bonding layer deposited on the substrate to allow the heat dissipation layer to be bonded to the substrate.

Description

Technology Field

[0001] The present invention relates to a heat dissipation substrate capable of minimizing the occurrence of delamination by having excellent heat dissipation efficiency and strong interlayer bonding strength, and a method for manufacturing the same. Background Technology

[0002] The content described in this section merely provides background information regarding the present embodiment and does not constitute prior art.

[0003] As the importance of carbon neutrality is highlighted globally, the adoption of zero-emission vehicles, such as electric vehicles (EVs) and hybrid vehicles (HVs and PHVs), is rapidly increasing. Power semiconductors are core components of electric vehicles that handle the entire process of power conversion, voltage transformation, stabilization, distribution, and control. Electric vehicles include power control devices (batteries, semiconductors, control units, etc.) that supply high-voltage electrical energy to motors to generate driving force. The high-temperature repetitive cycles of 250 to 300°C that occur during the power control process cause degradation of electronic components, leading to serious problems such as reduced reliability and shortened lifespan.

[0004] Therefore, the development of heat dissipation technology that effectively manages heat generation and releases it to the outside is crucial. As next-generation mobility power modules become smaller and more integrated, high-reliability heat dissipation substrates capable of effective heat dissipation and minimizing thermal stress are essential. In particular, nitride-based ceramic substrates, such as AlN (aluminum nitride) or Si3N4 (silicon nitride), are widely utilized as substrates for next-generation power modules due to their advantages in thermal conductivity and electrical insulation. However, as shown in Fig. 6, thermal stress occurs due to the difference in thermal expansion coefficients between ceramics and metals, and delamination occurs due to repeated thermal shock.

[0005] Figure 6 is an enlarged view of the surface of a conventional heat dissipation substrate.

[0006] Due to the aforementioned problems, in conventional heat dissipation substrates, delamination between the ceramic and metal layers has occurred as shown in FIG. 6a or 6b, or Electrochemical Migration (ECM) has occurred as shown in FIG. 6c to 6f.

[0007] Accordingly, there is a need to develop a heat dissipation substrate with strong interlayer bonding strength to prevent delamination even under extreme environmental changes. The problem to be solved

[0008] One objective of the present invention is to provide a heat dissipation substrate and a method for manufacturing the same, which can minimize the occurrence of delamination by having excellent heat dissipation efficiency and strong interlayer bonding strength. means of solving the problem

[0009] According to one aspect of the present invention, a heat dissipation substrate is provided, characterized by comprising a substrate having structurally improved bonding strength and a space in which the remaining components within the heat dissipation substrate can be located, a heat dissipation layer that releases generated heat to the outside, and a bonding layer deposited on the substrate to allow the heat dissipation layer to be bonded to the substrate.

[0010] According to one aspect of the present invention, the substrate is characterized by being implemented as a nitride-based ceramic substrate.

[0011] According to one aspect of the present invention, the substrate is characterized by being made of aluminum nitride (AlN) or silicon nitride (Si3N4).

[0012] According to one aspect of the present invention, the substrate is characterized by including a nanostructure to structurally improve adhesion.

[0013] According to one aspect of the present invention, the nanostructure is characterized by being implemented in a wedge shape on the upper surface of the substrate in a regular or irregular manner to a predetermined depth.

[0014] According to one aspect of the present invention, the preset depth is characterized by having a preset error range based on 500 nm.

[0015] According to one aspect of the present invention, a method for manufacturing a heat dissipation substrate is provided, comprising a patterning process for patterning the upper surface of a substrate to a predetermined depth, a first deposition process for depositing a bonding layer on the upper surface of the substrate, and a second deposition process for depositing a heat dissipation layer on the bonding layer.

[0016] According to one aspect of the present invention, the bonding layer is characterized by being implemented with a predetermined metal.

[0017] According to one aspect of the present invention, the metal set above is characterized as being aluminum.

[0018] According to one aspect of the present invention, the metal set is characterized as being germanium (Ge), copper (Cu), silver (Ag), or silicon (Si).

[0019] According to one aspect of the present invention, the bonding layer is characterized by being deposited to have a predetermined thickness.

[0020] According to one aspect of the present invention, the predetermined thickness is characterized by being approximately 1 μm.

[0021] According to one aspect of the present invention, a heat dissipation substrate manufactured according to the above manufacturing method is provided. Effects of the invention

[0022] As described above, according to one aspect of the present invention, there is an advantage of having excellent heat dissipation efficiency and strong interlayer bonding strength, which can minimize the occurrence of delamination. Brief explanation of the drawing

[0023] FIG. 1 is a diagram illustrating the configuration of a heat dissipation substrate according to one embodiment of the present invention. FIG. 2 is a flowchart illustrating a method for manufacturing a heat dissipation substrate according to one embodiment of the present invention. FIGS. 3 to 5 are drawings illustrating the manufacturing process of a heat dissipation substrate according to one embodiment of the present invention. Figure 6 is an enlarged view of the surface of a conventional heat dissipation substrate. Specific details for implementing the invention

[0024] The present invention is susceptible to various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention. Similar reference numerals have been used for similar components in the description of each drawing.

[0025] Terms such as first, second, A, B, etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0026] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0027] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" should be understood as not precluding the existence or addition of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification.

[0028] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this invention pertains.

[0029] Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0030] In addition, each component, process, procedure, or method included in each embodiment of the present invention may be shared within a scope that is not technically contradictory to one another.

[0031] FIG. 1 is a diagram illustrating the configuration of a heat dissipation substrate according to one embodiment of the present invention.

[0032] Referring to FIG. 1, a heat dissipation substrate (100) according to one embodiment of the present invention includes a substrate (110), a bonding layer (120), and a heat dissipation layer (130).

[0033] The heat dissipation substrate (100) refers to a substrate capable of mounting various components, such as semiconductor devices, while efficiently dissipating heat generated from each component. At this time, the heat dissipation substrate (100) includes the components described below, thereby having excellent heat dissipation efficiency and strong interlayer bonding strength between components (especially between the substrate and the bonding layer), which minimizes the occurrence of delamination. Accordingly, the heat dissipation substrate (100) can have excellent effects as a heat dissipation substrate and can have a high lifespan and reliability.

[0034] The substrate (110) provides a space where the remaining components within the heat dissipation substrate (100) can be located, and structurally improves the bonding strength with the bonding layer (120).

[0035] The substrate (110) places the remaining components within the heat dissipation substrate (100). The substrate (110) can be implemented as a nitride-based ceramic substrate, for example, as AlN (aluminum nitride) or Si3N4 (silicon nitride). The substrate is implemented as a nitride-based ceramic substrate and provides a space on which the remaining components can be placed.

[0036] The substrate (110) structurally improves the bonding strength with the bonding layer (120). The substrate (110) includes a wedge-shaped nanostructure (115) on the surface where the bonding layer (120) is to be located, i.e., the upper surface. The nanostructure (115) is implemented in a wedge shape on the upper surface of the substrate (110) at a predetermined depth, for example, 500 nm, with a predetermined error range (e.g., 20%). As the nanostructure (115) is formed, the substrate (110) can have relatively superior bonding strength with the bonding layer (120) in a direction perpendicular to the height direction. Even if the heat dissipation substrate (100) is continuously exposed to high-temperature repetitive cycles, the thermal stress and thermal shock generated can be mitigated, making it relatively resistant to peeling of the bonding layer (120). The substrate (110) can structurally have improved bonding strength with the bonding layer (120).

[0037] The bonding layer (120) is deposited on the substrate (110) so that the heat dissipation layer (130) can be bonded to the substrate (110).

[0038] The bonding layer (120) is implemented with a predetermined metal. Here, the predetermined metal may be implemented as aluminum, which is a metal having relatively high ductility, low corrosion resistance, and a low bonding temperature compared to the components of the heat dissipation layer (130). Alternatively, the predetermined metal may be implemented as germanium (Ge), copper (Cu), silver (Ag), or silicon (Si), which is a metal having excellent reactivity and a relatively low melting point.

[0039] A bonding layer (120) is deposited on the upper surface of a substrate (110). The bonding layer (120) is deposited on the upper surface of the substrate (110) with a predetermined thickness (height), for example, a thickness of approximately 1 μm or a thickness within a predetermined error range (for example, 20%) based on 1 μm, and can be deposited on the nanostructure (115) to a depth of approximately half of its thickness. Accordingly, the bonding layer (120) can have a significantly improved bonding strength (in the direction perpendicular to the height direction) compared to that of the prior art.

[0040] The heat dissipation layer (130) is deposited on the bonding layer (120) to dissipate heat generated to the outside. The heat dissipation layer (130) can be implemented with a metal having excellent thermal conductivity, for example, copper (Cu). As the heat dissipation layer (130) is deposited with the aforementioned metal on the bonding layer (120), heat generated from a component mounted on the heat dissipation substrate (100) is easily dissipated to the outside.

[0041] As the heat dissipation substrate (100) includes the above-described configuration, it has excellent heat dissipation efficiency and strong interlayer bonding strength, thereby minimizing the occurrence of delamination.

[0042] FIG. 2 is a flowchart illustrating a method for manufacturing a heat dissipation substrate according to one embodiment of the present invention, and FIG. 3 to 5 are drawings illustrating a manufacturing process of a heat dissipation substrate according to one embodiment of the present invention.

[0043] The upper surface of the substrate (110) is patterned to a predetermined depth (S210). Referring to FIG. 3, the upper surface (top surface) of the substrate (110) on which the bonding layer (120) is to be deposited is patterned to a predetermined depth. As described above, a nanostructure (115) is formed on the upper surface of the patterned substrate (110) at a predetermined depth (e.g., a predetermined error range based on 500 nm) that is implemented regularly or irregularly.

[0044] A bonding layer (120) is deposited on the upper surface of a substrate (110) (S220). Referring to FIG. 4, a bonding layer (120) is deposited on the upper surface of a substrate (110) on which a nanostructure (115) is formed. The bonding layer (120) is implemented to have a predetermined thickness (height, for example, within 1 μm) on the substrate (110). The bonding layer (120) can be deposited on the substrate (110) by a sputtering method in a predetermined environment. Here, the predetermined environment may be an environment having a pressure of 3 to 5 m Torr, a room temperature of 200°C, and a deposition rate of 0.2 to 0.5 nm / s. If the bonding layer (120) is deposited in an environment other than the aforementioned environment, the probability of defects such as voids and the probability of the bonding layer (120) being deposited unevenly are increased. Accordingly, the bonding layer (120) is deposited on the upper surface of the substrate (110) by sputtering in a preset environment.

[0045] A heat dissipation layer (130) is deposited on the bonding layer (120) (S230). Referring to FIG. 5, the heat dissipation layer (130) is also deposited in the same or similar environment and method as the bonding layer (120).

[0046] A heat dissipation substrate (100) is manufactured through this process. Depending on the structural characteristics of the substrate (110), the heat dissipation substrate (100) can have excellent interlayer bonding strength.

[0047] Although FIG. 2 describes each process as being executed sequentially, this is merely an illustrative explanation of the technical concept of one embodiment of the present invention. In other words, a person skilled in the art to which one embodiment of the present invention belongs can apply various modifications and variations by changing the order described in each figure or executing one or more of the processes in parallel, as long as they do not deviate from the essential characteristics of one embodiment of the present invention. Therefore, FIG. 2 is not limited to a chronological order.

[0048] Meanwhile, the processes illustrated in FIG. 2 can be implemented as computer-readable code on a computer-readable recording medium. A computer-readable recording medium includes all types of recording devices in which data that can be read by a computer system is stored. That is, a computer-readable recording medium includes storage media such as magnetic storage media (e.g., ROM, floppy disk, hard disk, etc.) and optical reading media (e.g., CD-ROM, DVD, etc.). In addition, computer-readable recording media can be distributed across networked computer systems, allowing computer-readable code to be stored and executed in a distributed manner.

[0049] The above description is merely an illustrative explanation of the technical concept of the present embodiment, and a person skilled in the art to which the present embodiment belongs would be able to make various modifications and variations within the scope of the essential characteristics of the present embodiment. Accordingly, the present embodiments are intended to explain, not limit, the technical concept of the present embodiment, and the scope of the technical concept of the present embodiment is not limited by these embodiments. The scope of protection of the present embodiment shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present embodiment. Explanation of the symbols

[0050] 100: Heat dissipation substrate 110: Substrate 115: Nanostructure 120: Bonding layer 130: Heat dissipation layer

Claims

Claim 1 delete Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 A method for manufacturing a heat dissipation substrate comprises: a patterning process for patterning the upper surface of a substrate to a predetermined depth; a first deposition process for depositing a bonding layer on the upper surface of the substrate by sputtering at a speed of 0.2 to 0.5 nm / s in an environment having a pressure of 3 to 5 m Torr and a temperature of room temperature to 200°C; and a second deposition process for depositing a heat dissipation layer on the bonding layer in an environment identical to the deposition environment of the first deposition process, wherein the substrate includes a regular or irregular wedge-shaped nanostructure on the upper surface of the substrate to a depth having an error range of 20% based on 500 nm, thereby improving bonding strength with the bonding layer, wherein the bonding layer is implemented in aluminum, germanium, silver, or silicon, is deposited to have a thickness within an error range of 20% based on 1 μm, and is deposited on the nanostructure to a depth within a predetermined error range based on its own thickness. Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 A heat dissipation substrate manufactured according to the manufacturing method of claim 7.

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