Display device including a semiconductor light emitting device

Abstract

A display device including a semiconductor light-emitting element according to an embodiment comprises: a substrate; a semiconductor light-emitting element disposed on the substrate; and a light-reflecting filling layer disposed to surround the semiconductor light-emitting element, wherein the height of the upper surface of the light-reflecting filling layer may be less than or equal to the height of the upper surface of the semiconductor light-emitting element.

Description

Technology Field

[0001] The embodiment relates to a display device including a semiconductor light-emitting element. Background Technology

[0002] Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses a micro-LED, which is a semiconductor light-emitting element having a diameter or cross-sectional area of ​​100 μm or less, as a display element.

[0004] Because micro-LED displays use micro-LEDs, which are semiconductor light-emitting devices, as display elements, they possess excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust size or resolution by separating and combining screens in a modular manner, and also have the advantage of enabling the implementation of flexible displays.

[0006] However, since large micro-LED displays require millions of micro-LEDs, there is a technical challenge in rapidly and accurately transferring the micro-LEDs onto the display panel.

[0007] Recently developed transfer technologies include the pick-and-place process, the laser lift-off method, and the self-assembly method.

[0008] On the other hand, micro-LED display devices based on internal technology have been studied for a problem where light intensity varies depending on the viewing angle. Additionally, there is a problem where more light is emitted from the sides of the display device than from the front. The problem to be solved

[0009] One of the technical challenges of the embodiment is to improve the uniformity of brightness according to the viewing angle in a display device including a semiconductor light-emitting element.

[0010] In addition, one of the technical challenges of the embodiment is to improve the light efficiency of the display device.

[0011] In addition, one of the technical challenges of the embodiment is to improve the brightness at the front of the display device.

[0012] In addition, one of the technical challenges of the embodiment is to improve the transfer efficiency when transferring a semiconductor light-emitting element to a panel substrate.

[0014] The technical problems of the embodiments are not limited to those described in this section and include those that can be identified through the description of the invention. means of solving the problem

[0015] A display device including a semiconductor light-emitting element according to an embodiment comprises: a substrate; a semiconductor light-emitting element disposed on the substrate; and a light-reflecting filling layer disposed to surround the semiconductor light-emitting element, wherein the height of the upper surface of the light-reflecting filling layer may be less than or equal to the height of the upper surface of the semiconductor light-emitting element.

[0016] In addition, in the embodiment, the light-reflecting filling layer may be in contact with the lower surface and the side surface of the semiconductor light-emitting element.

[0017] Additionally, in the embodiment, the light-reflecting filling layer may include a first region that overlaps vertically with the semiconductor light-emitting element and a second region that does not overlap.

[0018] Additionally, in an embodiment, the semiconductor light-emitting element includes a first electrode, and the first electrode may be arranged so as to be biased toward one side on the upper surface of the semiconductor light-emitting element.

[0019] In addition, in an embodiment, a second panel electrode is included that is electrically connected to the second electrode of the semiconductor light-emitting element, and the second panel electrode can be in contact with the light-reflecting filling layer.

[0020] In addition, in the embodiment, the horizontal width of the light-reflecting filling layer may be larger than the horizontal width of the semiconductor light-emitting element.

[0021] In addition, in the embodiment, the thickness of the second region may be greater than the thickness of the semiconductor light-emitting element.

[0022] In addition, in the embodiment, the upper surface of the semiconductor light-emitting element may include a roughness pattern.

[0023] Additionally, the embodiment may further include a reflective film disposed below the light-reflecting filler layer.

[0024] Additionally, in an embodiment, the reflective film is spaced apart from the light-reflecting filling layer, and the horizontal width of the reflective film may be greater than the horizontal width of the light-reflecting filling layer. Additionally, an embodiment comprises a substrate; a semiconductor light-emitting element having a light-emitting structure spaced apart on the substrate; and a light-reflecting filling layer arranged to surround the semiconductor light-emitting element; wherein the height of the upper surface of the light-reflecting filling layer is less than or equal to the height of the upper surface of the light-emitting structure, and the light-reflecting filling layer includes a first region disposed below the semiconductor light-emitting element and a second region disposed on the side of the semiconductor light-emitting element, and the horizontal width of the first region may be greater than or equal to the horizontal width of the lower surface of the semiconductor light-emitting element. Additionally, in an embodiment, the upper surface of the light-reflecting filling layer may be flat. Additionally, in an embodiment, the first region may overlap vertically with the first electrode. Additionally, in an embodiment, the thickness of the second region may be greater than the thickness of the first region. Effects of the invention

[0025] A display device including a semiconductor light-emitting element according to an embodiment has the technical effect of improving the uniformity of brightness according to the viewing angle.

[0026] For example, the embodiment has the technical effect of reducing the difference in light brightness between the side and front portions by arranging a light-reflecting filling layer to surround the semiconductor light-emitting element.

[0027] In addition, the embodiment has the technical effect of improving brightness in the front section.

[0028] For example, in an embodiment, a light-reflecting filling layer is arranged to surround the side of a semiconductor light-emitting device, so that light from the side is reflected to the front, thereby improving the brightness of the front portion.

[0029] In addition, the embodiment has a technical effect of improving the transfer efficiency of a semiconductor light-emitting device.

[0030] For example, the light-reflecting filling layer also functions as an adhesive layer and can improve transfer efficiency by fixing it in contact with the bottom and side surfaces of the semiconductor light-emitting device.

[0031] In addition, the embodiment has a technical effect that can improve the light efficiency of a display device.

[0032] For example, the embodiment can improve light efficiency by forming roughness on the semiconductor light-emitting element or a reflector on the panel substrate.

[0033] The technical effects of the embodiments are not limited to those described in this section and include those that can be understood through the description of the invention. Brief explanation of the drawing

[0034] FIG. 1 is an exemplary diagram of a living room of a house in which a display device according to an embodiment is placed. FIG. 2 is an enlarged view of the first panel area of ​​the display device of FIG. 1. FIG. 3 is a cross-sectional view along the line B1-B2 in area A2 of FIG. 2. Figure 4 is a luminance graph of a display device being studied internally. FIG. 5 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a first embodiment. FIG. 6 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a second embodiment. FIG. 7 is a cross-sectional view of a display device including a semiconductor light-emitting element according to a third embodiment. FIG. 8 is a plan view of a display device including a semiconductor light-emitting element according to a fourth embodiment. FIG. 9 is a brightness graph of a display device including a semiconductor light-emitting element to which an embodiment is applied. Specific details for implementing the invention

[0035] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes 'module' and 'part' for components used in the following description are assigned or used interchangeably for the sake of ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, the attached drawings are intended to facilitate an easy understanding of the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited by the attached drawings. Additionally, when an element such as a layer, region, or substrate is referred to as existing 'on' another component, this includes existing directly on the other element or having other intermediate elements existing between them.

[0036] The display devices described in this specification may include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation systems, slate PCs, tablet PCs, ultrabooks, desktop computers, etc. However, the configurations according to the embodiments described in this specification may be applied to devices capable of display, even if they are new product forms developed in the future.

[0038] A light-emitting element according to the following embodiments and a display device including the same will be described.

[0039] FIG. 1 illustrates a living room of a house in which a display device (100) according to an embodiment is placed.

[0040] The display device (100) of the embodiment can display the status of various electronic products such as a washing machine (101), a robot vacuum cleaner (102), and an air purifier (103), communicate with each electronic product based on IoT, and control each electronic product based on user setting data.

[0041] The display device (100) according to the embodiment may include a flexible display fabricated on a thin and flexible substrate. The flexible display can be bent or rolled like paper while maintaining the characteristics of a conventional flat panel display.

[0042] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a single color. The unit pixels of a flexible display can be realized by a light-emitting element. In the embodiments, the light-emitting element may be a Micro-LED or a Nano-LED, but is not limited thereto.

[0044] Figure 2 is an enlarged view of the first panel area (A1) of the display device of Figure 1.

[0045] According to FIG. 2, the display device (100) of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel regions, such as a first panel region (A1), by tiling.

[0046] The first panel area (A1) may include a plurality of light-emitting elements (150) arranged for each unit pixel (PX in FIG. 2).

[0047] For example, a unit pixel (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, a plurality of red light-emitting elements (150R) may be placed in the first sub-pixel (PX1), a plurality of green light-emitting elements (150G) may be placed in the second sub-pixel (PX2), and a plurality of blue light-emitting elements (150B) may be placed in the third sub-pixel (PX3). The unit pixel (PX) may further include a fourth sub-pixel in which no light-emitting elements are placed, but is not limited thereto. Meanwhile, the light-emitting element (150) may be a semiconductor light-emitting element.

[0049] Next, Fig. 3 is a cross-sectional view along the line B1-B2 in area A2 of Fig. 2.

[0050] Referring to FIG. 3, the display device (100) of the embodiment may include a substrate (200), assembly wiring (201, 202), a first insulating layer (211a), a second insulating layer (211b), a third insulating layer (206), and a plurality of light-emitting elements (150).

[0051] The assembly wiring may include a first assembly wiring (201) and a second assembly wiring (202) spaced apart from each other. The first assembly wiring (201) and the second assembly wiring (202) may be provided to generate a dielectrophoretic force to assemble a light-emitting element (150). Additionally, the first assembly wiring (201) and the second assembly wiring (202) may be electrically connected to the electrodes of the light-emitting element and function as electrodes of a display panel.

[0052] The assembled wiring (201, 202) may be formed of a transparent electrode (ITO) or may include a metallic material with excellent electrical conductivity. For example, the assembled wiring (201, 202) may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0053] A first insulating layer (211a) may be disposed between the first assembled wiring (201) and the second assembled wiring (202), and a second insulating layer (211b) may be disposed on the first assembled wiring (201) and the second assembled wiring (202). The first insulating layer (211a) and the second insulating layer (211b) may be oxide films, nitride films, etc., but are not limited thereto.

[0055] The light-emitting element (150) may include a red light-emitting element (150), a green light-emitting element (150G), and a blue light-emitting element (150B0) to form a unit pixel (sub-pixel), but is not limited thereto, and may also implement red and green by providing a red phosphor and a green phosphor, etc.

[0056] The substrate (200) may be formed of glass or polyimide. Additionally, the substrate (200) may include flexible materials such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, the substrate (200) may be a transparent material, but is not limited thereto.

[0057] The third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0058] The third insulating layer (206) may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer may be flexible to enable the flexible function of the display device. For example, the third insulating layer (206) may be an anisotropy conductive film (ACF), an anisotropy conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer that is electrically conductive in the direction perpendicular to the thickness, but electrically insulating in the direction horizontal to the thickness.

[0059] The third insulating layer (206) may include an assembly hole (203) into which a light-emitting element (150) is inserted. Accordingly, when self-assembling, the light-emitting element (150) can be easily inserted into the assembly hole (203) of the third insulating layer (206). The assembly hole (203) may be called an insertion hole, a fixing hole, an alignment hole, etc.

[0060] The gap between the assembly wiring (201, 202) is formed to be smaller than the width of the light-emitting element (150) and the width of the assembly hole (203), so that the assembly position of the light-emitting element (150) using an electric field can be fixed more precisely.

[0061] A third insulating layer (206) is formed on the assembled wiring (201, 202) to protect the assembled wiring (201, 202) from fluid (1200) and prevent leakage of current flowing through the assembled wiring (201, 202). The third insulating layer (206) may be formed as a single layer or multiple layers of an inorganic insulator such as silica or alumina, or an organic insulator.

[0062] Additionally, the third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0063] The third insulating layer (206) may be an insulating layer that is adhesive or a conductive adhesive layer that is conductive. The third insulating layer (206) may be flexible so that it can enable the flexible function of the display device.

[0064] The third insulating layer (206) has a partition, and an assembly hole (203) can be formed by this partition. For example, when forming the substrate (200), a portion of the third insulating layer (206) is removed so that each of the light-emitting elements (150) can be assembled in the assembly hole (203) of the third insulating layer (206).

[0065] An assembly hole (203) is formed in the substrate (200) to which light-emitting elements (150) are joined, and the surface on which the assembly hole (203) is formed can come into contact with a fluid (1200). The assembly hole (203) can guide the precise assembly position of the light-emitting elements (150).

[0066] Meanwhile, the assembly hole (203) may have a shape and size corresponding to the shape of the light-emitting element (150) to be assembled at the corresponding location. Accordingly, it is possible to prevent other light-emitting elements from being assembled in the assembly hole (203) or multiple light-emitting elements from being assembled.

[0068] Figure 4 is a graph showing the luminance according to the viewing angle of a display device being studied internally. In a display device, the placement of a black matrix can prevent color mixing between semiconductor light-emitting elements, but on the other hand, a difference in luminance may occur depending on the viewing angle. Referring to Figure 4, a difference in luminance occurs as one moves from the front to the side of the display screen, and the luminance may be maximum at approximately 60°. Meanwhile, there is a problem that the luminance decreases when the position of the black matrix is ​​adjusted to reduce the difference in luminance according to the viewing angle.

[0070] A display device including a semiconductor light-emitting element according to an embodiment for solving technical problems will be described below.

[0071] FIG. 5 is a cross-sectional view of a display device (100) including a semiconductor light-emitting element according to a first embodiment. Referring to FIG. 5, the first embodiment may include a substrate (110), a semiconductor light-emitting element (150), a light-reflecting filling layer (160), a first panel electrode (158), a second panel electrode (159), and an insulating layer (140).

[0072] The above semiconductor light-emitting device (150) may have a light-emitting structure (155) comprising a first conductivity semiconductor layer (151), an active layer (152), and a second conductivity semiconductor layer (153). The first conductivity semiconductor layer (151) may be an n-type semiconductor layer, and the second conductivity semiconductor layer (153) may be a p-type semiconductor layer, but is not limited thereto. The first conductivity semiconductor layer (151), the active layer (152), and the second conductivity semiconductor layer (153) may be made of a compound semiconductor material. For example, the compound semiconductor material may be a group 3-5 compound semiconductor material, a group 2-6 compound material, etc. For example, the compound semiconductor may be a binary compound selected from the group consisting of GaP, GaAs, GaSb, AlP, AlAs, AlSb, InP, InAs, InSb, and mixtures thereof; A ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlInP, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and a quaternary compound selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. For example, the first conductivity type semiconductor layer (151) may include the first conductivity type dopant, and the second conductivity type semiconductor layer (153) may include the second conductivity type dopant. For example, the first conductivity type dopant may be an n-type dopant such as silicon (Si), and the second conductivity type dopant may be a p-type dopant such as boron (B).

[0073] The active layer (152) is a region that generates light and can generate light having a specific wavelength band depending on the material properties of the compound semiconductor. Additionally, the active layer may have a multiple quantum well or a single quantum well structure, and the wavelength band may be determined by the energy bandgap of the compound semiconductor included in the active layer. Accordingly, depending on the energy bandgap of the compound semiconductor included in the active layer, the semiconductor light-emitting device of the embodiment can generate UV light, blue light, green light, and red light.

[0074] Additionally, the semiconductor light-emitting element (150) may include a first electrode (156) and a second electrode (157). The first electrode (156) may be utilized as an ohmic contact electrode and may be electrically connected to a first panel electrode (158). The second electrode (157) may be formed as a transparent electrode and may be electrically connected to a second panel electrode (159). In the drawing, the first panel electrode (158) is positioned to overlap vertically with the active layer, but depending on the etching shape of the light-emitting structure, it may not overlap vertically with the active layer. The semiconductor light-emitting element (150) may be positioned so that the first conductive semiconductor layer (151) faces upward.

[0076] Meanwhile, a light-reflecting filling layer (160) may be disposed around the semiconductor light-emitting element (150). The light-reflecting filling layer (160) may be directly adhered to the substrate (110), but a separate adhesive layer may be interposed therein.

[0077] The light-reflecting filling layer (160) may include a high-refractive index material (165). The high-refractive index material (165) may include at least one of TiO2, SiO2, or ZrO2, but is not limited thereto. Additionally, the light-reflecting filling layer (160) may include a photosensitive material and may have a light reflectance of 60% or more. Accordingly, the embodiment has a technical effect of improving light efficiency by reflecting light escaping from the sides and bottom of the semiconductor light-emitting device upwards as the light-reflecting filling layer is arranged to surround the semiconductor light-emitting device.

[0078] Additionally, the upper surface of the light-reflecting filling layer (160) may be located at a height lower than or equal to the upper surface of the semiconductor light-emitting element (150). Additionally, the light-reflecting filling layer (160) may be horizontally superimposed with the active layer of the semiconductor light-emitting element (150a).

[0079] Additionally, the light-reflecting filling layer (160) may include a first region that overlaps vertically with the semiconductor light-emitting element (150a) and a second region that does not overlap. The thickness of the second region may be thicker than the thickness of the semiconductor light-emitting element (150a).

[0080] Additionally, the light-reflecting filling layer (160) may include a material having adhesive properties. Accordingly, when transferring a semiconductor light-emitting element (150a) to a panel substrate (not shown), the light-reflecting filling layer (160) acts as an adhesive layer, thereby providing a technical effect of fixing the semiconductor light-emitting element to the panel substrate. Furthermore, as the light-reflecting filling layer (160) is arranged to surround the semiconductor light-emitting element (150a), there is a technical effect of improving the transfer rate when transferring the semiconductor light-emitting element to the panel substrate.

[0081] Additionally, the upper surface of the light-reflecting filling layer (160) may include a flat surface, and a second panel electrode (159) may be disposed thereon. The light-reflecting filling layer (160) may be surrounded by an insulating layer (140). Additionally, the second panel electrode (159) may be a transparent electrode. For example, it may be ITO, IZO, or ZnO, but is not limited thereto. As the second panel electrode (159) is formed as a transparent electrode, light reflected from the light-reflecting filling layer (160) is transmitted upward without being absorbed, thereby improving light efficiency.

[0082] Meanwhile, when the semiconductor light-emitting element of the embodiment is transferred to a panel substrate, methods such as laser lift-off (LLO) or pick-up place may be used, but are not limited thereto. In addition, when the semiconductor light-emitting element of the embodiment is transferred to a panel substrate using the laser lift-off (LLO) method, the resin layer is separated, so a long-wavelength laser can be selected, and the area of ​​the laser scan per pass is increased, thereby improving the transfer speed.

[0084] FIG. 6 is a cross-sectional view of a display device (101) including a semiconductor light-emitting element according to a second embodiment. The second embodiment may adopt the technical features of the first embodiment. For example, in the second embodiment, a light-reflecting filling layer (160) is disposed around a semiconductor light-emitting element (150b) to reflect light emitted from the bottom and side of the semiconductor light-emitting element upward, thereby improving light efficiency.

[0085] Referring to FIG. 6, in the second embodiment, the semiconductor light-emitting element (150b) may include a first roughness pattern (180). The first roughness pattern (180) may be an uneven structure formed as the semiconductor light-emitting element (150b) grows on a patterned sapphire substrate. The first roughness pattern (180) may be formed on a first conductive semiconductor layer (151) and may include an irregular surface. Accordingly, the first electrode (156), the first panel electrode (158), and the second panel electrode (159) of the semiconductor light-emitting element (150b) may be formed to correspond to the shape of the first roughness pattern (180). The first panel electrode (158) may be formed in a region of the first roughness pattern (180). Additionally, the second panel electrode (159) may be formed in one area of ​​the first roughness pattern (180). Accordingly, the second embodiment has the technical effect of improving light efficiency through light diffuse reflection as the first roughness pattern (180) is formed on the light-emitting surface of the semiconductor light-emitting element (150b).

[0087] FIG. 7 is a display device (102) including a semiconductor light-emitting element according to a third embodiment. The third embodiment may adopt the technical features of the first embodiment. For example, in the third embodiment, a light-reflecting filling layer (160) may be arranged to surround the semiconductor light-emitting element (150c).

[0088] Referring to FIG. 7, in the third embodiment, the semiconductor light-emitting element (150c) may include a second roughness pattern (185) on the light-emitting surface.

[0089] The second roughness pattern (185) can be formed through surface treatment of the upper surface of the semiconductor light-emitting element (150c). The irregular surface of the second roughness pattern (185) acts as a light scattering layer, thereby providing a technical effect of improving the light efficiency of the semiconductor light-emitting element (150c).

[0090] Additionally, the third embodiment may further include a reflector (170) disposed below the semiconductor light-emitting element (150c). The reflector (170) may be disposed below the light-reflecting filling layer (160). Additionally, the reflector (170) may be disposed spaced apart from the light-reflecting filling layer (160), but is not limited thereto. Furthermore, the horizontal width of the reflector (170) may be greater than the horizontal width of the semiconductor light-emitting element (150c) and the light-reflecting filling layer (160).

[0091] The third embodiment has the technical effect of improving light efficiency by reflecting light proceeding downward from the semiconductor light-emitting element (150c) upward as the reflector (170) is placed below the semiconductor light-emitting element.

[0093] FIG. 8 is a conceptual diagram showing the electrode structure of a display device including a semiconductor light-emitting element according to a fourth embodiment. Referring to FIG. 8, the semiconductor light-emitting element (150) may include a first electrode (156) and a second electrode (not shown). The first electrode (156) may be formed in a region of the upper surface of the semiconductor light-emitting element (150) and may be circular, but is not limited thereto.

[0094] Additionally, the fourth embodiment may include a first panel electrode (158) and a second panel electrode (159). The first panel electrode (158) may be electrically connected to the first electrode (156) of the semiconductor light-emitting element (150), and the second panel electrode (159) may be electrically connected to the second electrode.

[0095] The first electrode (158) may utilize an ohmic contact electrode. Additionally, the first electrode (156) may be positioned so as to be biased toward one side of the semiconductor light-emitting element (150). Accordingly, a light scattering structure, such as an uneven structure or a texturing structure, may be formed in the region on the upper surface of the semiconductor light-emitting element (150) where no electrode is formed, thereby improving light efficiency.

[0096] Additionally, the second panel electrode (159) may be formed from a transparent electrode such as ITO, IZO, or ZnO. The second panel electrode (159) may not overlap vertically with the light-emitting structure of the semiconductor light-emitting element (150). Furthermore, the second panel electrode (159) may be in direct contact with the light-reflecting filling layer and may be connected to the second electrode by extending along the side of the semiconductor light-emitting element. The second electrode may also be formed from a transparent electrode.

[0098] FIG. 9 is a graph showing the brightness of a display device to which an embodiment is applied. Referring to FIG. 9, 0° may be the front direction of the display device. A display device including a semiconductor light-emitting element according to an embodiment may have improved uniformity of brightness according to a viewing angle of about ±70° from the front.

[0099] Referring briefly to Fig. 4, there was a problem in that the brightness of the display according to the internal technology was low in the frontal area and the brightness was highest at a viewing angle of about 70°.

[0100] Meanwhile, in a display device including a semiconductor light-emitting element according to an embodiment, by arranging a light-reflecting filling layer to surround the bottom and side of the semiconductor light-emitting element, it is possible to form uniform brightness according to the viewing angle and significantly improve brightness at the front side, thereby providing a technical effect.

[0102] A display device including a semiconductor light-emitting element according to an embodiment has the technical effect of improving the uniformity of brightness according to the viewing angle.

[0103] For example, the embodiment has the technical effect of reducing the difference in light brightness between the side and front portions by arranging a light-reflecting filling layer to surround the semiconductor light-emitting element.

[0104] In addition, the embodiment has the technical effect of improving brightness in the front section.

[0105] For example, in an embodiment, a light-reflecting filling layer is arranged to surround the side of a semiconductor light-emitting device, so that light from the side is reflected to the front, thereby improving the brightness of the front portion.

[0106] In addition, the embodiment has a technical effect of improving the transfer efficiency of a semiconductor light-emitting device.

[0107] For example, the light-reflecting filling layer also functions as an adhesive layer and can improve transfer efficiency by fixing it in contact with the bottom and side surfaces of the semiconductor light-emitting device.

[0108] In addition, the embodiment has a technical effect that can improve the light efficiency of a display device.

[0109] For example, the embodiment can improve light efficiency by forming roughness on the semiconductor light-emitting element or a reflector on the panel substrate.

[0111] Although the present invention has been described above with reference to embodiments thereof, those skilled in the art will readily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols

[0113] 110: Substrate 140: Passivation layer 150: Semiconductor light-emitting diode 151: First conductivity type semiconductor layer 152: Active layer 153: Second-conduction semiconductor layer 155: Luminous structure 156: First electrode 157: Second electrode 158: First panel electrode 159: Second panel electrode 160: Light-reflecting filling layer 165: High-refractive index material 170: Semi-dead wall 175: Leveling layer 180: 1st Roughness Pattern 185: Second Roughness Pattern

Claims

Claim 1 A display device comprising: a substrate; a semiconductor light-emitting element disposed spaced apart on the substrate and having a light-emitting structure; and a light-reflecting filling layer disposed to surround the semiconductor light-emitting element; wherein the height of the upper surface of the light-reflecting filling layer is less than or equal to the height of the upper surface of the light-emitting structure, and the light-reflecting filling layer includes a first region disposed below the semiconductor light-emitting element and a second region disposed on the side of the semiconductor light-emitting element, and the horizontal width of the first region is greater than or equal to the horizontal width of the lower surface of the semiconductor light-emitting element. Claim 2 A display device comprising a semiconductor light-emitting element, wherein, in claim 1, the light-reflecting filling layer surrounds the lower surface and side surface of the semiconductor light-emitting element. Claim 3 A display device comprising a semiconductor light-emitting element, wherein the upper surface of the light-reflecting filling layer is flat in claim 1. Claim 4 A display device comprising a semiconductor light-emitting element according to claim 1, wherein the semiconductor light-emitting element includes a first electrode, and the first electrode is disposed biased toward one side on the upper surface of the semiconductor light-emitting element. Claim 5 A display device comprising a semiconductor light-emitting element according to claim 1, wherein the second panel electrode is electrically connected to the second electrode of the semiconductor light-emitting element, and the second panel electrode is in contact with the light-reflecting filling layer. Claim 6 In paragraph 4, the display device comprising a semiconductor light-emitting element, wherein the first region is vertically superimposed with the first electrode. Claim 7 A display device comprising a semiconductor light-emitting element, wherein, in claim 1, the thickness of the second region is greater than the thickness of the first region. Claim 8 A display device comprising a semiconductor light-emitting element, wherein, in claim 1, the upper surface of the semiconductor light-emitting element includes a roughness pattern. Claim 9 A display device comprising a semiconductor light-emitting element, wherein, in claim 1, a reflective film disposed between the light-reflecting filling layer and the substrate. Claim 10 A display device comprising a semiconductor light-emitting element, wherein, in claim 9, the reflective film is spaced apart from the light-reflecting filling layer, and the horizontal width of the reflective film is greater than the horizontal width of the light-reflecting filling layer.

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