Semiconductor device
A semiconductor device with a gate structure and two-dimensional active patterns, utilizing h-BN and a two-dimensional ferroelectric bilayer, addresses the need for improved ferroelectric layers, enhancing electrical properties.
KR103000452B1Active Publication Date: 2026-08-05SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- KR1020220097209
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-08-04
- Publication Date
- 2026-08-05
- Estimated Expiration
- 2042-08-04
AI Technical Summary
Technical Problem
The challenge is to develop a semiconductor device that incorporates a ferroelectric layer made of a two-dimensional material.
Method used
The semiconductor device comprises a substrate with a gate structure and active patterns made of two-dimensional semiconductor materials, featuring a gate insulating layer of h-BN and a ferroelectric layer composed of a two-dimensional material bilayer, with specific configurations and layer stacking arrangements.
Benefits of technology
This configuration enhances the performance of semiconductor devices by leveraging the properties of two-dimensional materials, improving electrical readibility and functionality.
✦ Generated by Eureka AI based on patent content.
Abstract
The present invention provides a semiconductor device comprising a ferroelectric layer made of a two-dimensional material. The semiconductor device comprises a substrate, a gate structure disposed on the substrate and extending in a first direction, and an active pattern spaced apart from the substrate in a second direction and extending in a third direction and penetrating the gate structure, wherein the active pattern comprises a two-dimensional semiconductor material, and the gate structure comprises a gate insulating layer, a lower gate conductive layer, a ferroelectric layer, and an upper gate conductive layer sequentially stacked on the active pattern, wherein the gate insulating layer comprises h-BN (hexagonal boron nitride), and the ferroelectric layer comprises a two-dimensional material formed as a bilayer.
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