Method for preparation of area selective 2-dimensional transition metal chalcogenide thin film and the thin film thereby

Abstract

The present invention discloses a method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film, which can obtain a high-quality two-dimensional semiconductor layered material while overcoming existing patterning process problems by using a focused ion beam to selectively deposit a transition metal only in a desired region, thereby solving the problems caused by residual photoresist when using a conventional lithography process.

Description

Technology Field

[0001] The present invention relates to a method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film and a thin film manufactured through the same, and more specifically, to a method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film and a thin film manufactured through the same, which can obtain a high-quality two-dimensional semiconductor layered material while overcoming existing patterning process problems by solving the problems caused by residual photoresist when using a conventional lithography process. Background Technology

[0002] Two-dimensional semiconductor layered materials are attracting attention as next-generation new materials because, in a narrow sense, each layer has a thickness at the atomic level, and depending on the characteristics of the thin film, they are structurally flexible and possess diverse electrical and optical properties compared to conventional bulk thin films, thus having a wide range of applications and high potential for commercialization.

[0003] In addition, two-dimensional semiconductor layered materials are suitable for applications in future devices such as flexible and wearable devices that require high transmittance and flexibility, as well as device miniaturization resulting from low-dimensional structures.

[0004] Transition metal chalcogenide layered materials such as platinum selenide (PtSe) and platinum diselenide (PtSe2) are known as materials suitable for use as two-dimensional semiconductor layered materials as described above.

[0005] In these platinum selenide-based materials, Pt and Se atoms form strong covalent bonds, while layers are bonded by weak van der Waals bonds. Due to this configuration, platinum selenide layered materials offer the advantage of excellent electron mobility compared to other materials. Furthermore, they exhibit p-type semiconductor properties from a single layer to several layers, and metalloid properties as the number of layers increases. Various experiments are currently underway to utilize these properties in the field of electronic devices.

[0006] As prior art related to the above-mentioned transition metal chalcogenides, Korean Registered Patent Publication No. 10-2196693 (published Dec. 23, 2020) discloses a transition metal-chalcogen compound pattern structure and a method for manufacturing the same, and more specifically, discloses a method for manufacturing a transition metal-chalcogen compound pattern structure by applying a chalcogen material to a transition metal pattern layer created by patterning a transition metal thin film and heat treating it. However, in the above patent document, the process of patterning the transition metal layer is based on a lithography process. When a photoresist is applied to a two-dimensional semiconductor layered material to perform the lithography process, the photoresist can form a stable bond in the defective portion of the layered material. The photoresist bonded to the two-dimensional semiconductor layered material in this manner remains even after undergoing an etching process and has the problem of being difficult to remove. Furthermore, such photoresist residues have the disadvantage of significantly degrading the characteristics of the two-dimensional semiconductor layered material, which is sensitive to surface conditions.

[0007] FIG. 1 illustrates a method of patterning a two-dimensional layered material on a silicon substrate, etc. using a photoresist according to the prior art. When examined in more detail through FIG. 1, the patterning process using the photoresist may have a problem in which, when a two-dimensional layered material is patterned on a substrate according to the development (C), etching (D), and removal processes (E) of the photoresist in FIG. 1, photoresist residues inevitably remain on the upper and side surfaces of the layered material (2D materials) without being removed, and in particular, photoresist residues present in defective parts may have a problem in that they are difficult to remove.

[0008] Therefore, in order to commercialize two-dimensional semiconductor layered materials suitable for various electronic devices in the future, there is an urgent need to develop a novel process technology that can solve the problems caused by residual photoresist resulting from conventional lithography processes, thereby overcoming existing patterning process issues and enabling the production of devices containing high-quality two-dimensional semiconductor layered materials. Prior art literature

[0009] Korean Patent Publication No. 10-2196693 (Published Dec. 23, 2020) The problem to be solved

[0010] The first objective of the present invention is to provide a method for manufacturing a transition metal chalcogenide thin film, wherein the transition metal chalcogenide thin film is selectively formed in a desired area without undergoing a process such as lithography, which adversely affects the characteristics of the two-dimensional semiconductor layered material when applied to semiconductor devices, etc.

[0011] In addition, the second objective of the present invention is to provide a transition metal chalcogenide thin film prepared according to the above method. means of solving the problem

[0012] To solve the above technical problem, the present invention provides a method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film, characterized by comprising: (a) a step of providing a substrate in a reaction chamber; (b) a step of selectively depositing a transition metal layer in a desired area on the substrate using a focused ion beam; and (c) a step of forming a transition metal chalcogenide layer from a transition metal layer by vaporizing or sublimating a chalcogen source in the reaction chamber that can react with the transition metal in the transition metal layer deposited in step (b) to form a transition metal chalcogenide.

[0013] In one embodiment, the substrate may comprise any one selected from silicon (Si), silicon oxide (SiO2), quartz, aluminum oxide (Al2O3), and graphene, or a mixture thereof.

[0014] In one embodiment, step (c) may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0015] In one embodiment, between steps (b) and (c), a step of forming an additional transition metal layer on the substrate by vaporizing or sublimating a transition metal source capable of forming a transition metal layer identical to the transition metal layer formed in step (b) in a reaction chamber may be included; and preferably, the step of forming the additional transition metal layer may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0016] As one embodiment, the metal in the transition metal layer may be any one selected from nickel, platinum, tin, molybdenum, tungsten, cobalt, bismuth, titanium, and palladium.

[0017] In one embodiment, the chalcogen source may be any one selected from sulfur (S), selenium (Se), and tellurium (Te).

[0018] As one embodiment, the transition metal layer formed from step (b) may have a thickness of 3 to 150 nm.

[0019] In one embodiment, step (c) may be performed in a reaction chamber at a pressure range of 0.1 to 10 tor and a temperature range of 100 ℃ to 500 ℃.

[0020] As an embodiment, after step (c), the method may further include step (d) forming one or more metal electrodes at the ends of the transition metal chalcogenide layer formed in step (c).

[0021] In addition, the present invention can provide a two-dimensional transition metal chalcogenide thin film manufactured by the above manufacturing method.

[0022] In addition, the present invention can provide an electronic component comprising a two-dimensional transition metal chalcogenide thin film manufactured by the above manufacturing method. Effects of the invention

[0023] According to the present invention, since a transition metal chalcogenide thin film can be selectively manufactured only on a desired portion of a substrate using a focused ion beam, the surface characteristics of the transition metal chalcogenide thin film are not degraded due to residual photoresist resulting from conventional lithography processes, thereby enabling the production of a thin film having excellent electrical and optical properties.

[0024] In addition, according to the present invention, since a transition metal chalcogenide thin film can be selectively manufactured only on a desired portion of a substrate using a focused ion beam, precise patterning is possible, and since it does not include a lithography process and an etching process, it has the advantage of being environmentally friendly. Brief explanation of the drawing

[0025] FIG. 1 is a diagram illustrating a method of patterning a two-dimensional layered material on a silicon substrate, etc. using a photoresist according to the prior art. Figure 2 is a figure showing the results of observing a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention using an optical microscope. Figure 3 is a figure showing the results of Raman spectrum analysis for a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention. Figure 4 is a figure showing the X-ray photoelectron spectroscopy (XPS) analysis results for a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention. Figure 5 shows the transmission electron microscope (TEM) and energy dispersive X-ray spectroscopy (EDS) mapping results for a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention. Figure 6 is a figure showing photographs of a platinum pattern before and after the selenization process performed by a focused ion beam in Example 3 of the present invention, and the results of Raman spectrum analysis of a patterned sample after the selenization process. Figure 7 is a figure showing the results of analyzing the cross-section and electrical characteristics of a platinum diselenide device fabricated according to Example 4 of the present invention. Figure 8 is a figure showing the results of analyzing the optical properties of a platinum diselenide device fabricated according to Example 4 of the present invention. Specific details for implementing the invention

[0026] In the present invention, terms such as "composed of" or "comprising" should not be interpreted as necessarily including all of the various components or steps described in the invention, and should be interpreted as potentially excluding some of the components or steps, or including additional components or steps.

[0027] In addition, when describing the principles of a preferred embodiment of the present invention in detail, if it is determined that a specific description of related known functions or configurations could unnecessarily obscure the essence of the present invention, such detailed description is omitted.

[0028] To achieve the above technical objectives, the present invention provides a method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film, characterized by comprising: (a) a step of providing a substrate in a reaction chamber; (b) a step of selectively depositing a transition metal layer in a desired area on the substrate using a focused ion beam; and (c) a step of forming a transition metal chalcogenide layer from a transition metal layer by vaporizing or sublimating a chalcogen source in the reaction chamber that can react with the transition metal in the transition metal layer deposited in step (b) to form a transition metal chalcogenide.

[0030] The substrate provided in step (a) of the present invention may be used without limitation as long as it is a material capable of depositing a transition metal by a focused ion beam, and more specifically, may include any one selected from silicon (Si), silicon oxide (SiO2), quartz, aluminum oxide (Al2O3), and graphene, or a mixture thereof, but is not limited thereto.

[0031] In addition, the transition metal in the transition metal layer to be deposited by the focused ion beam in the present invention may be any one selected from nickel, platinum, tin, molybdenum, tungsten, cobalt, bismuth, titanium, and palladium, preferably any one selected from platinum, tin, molybdenum, and tungsten, and more preferably platinum, but is not limited thereto.

[0032] In addition, the reaction chamber in the present invention is not limited to any type and can be used as long as it is a reaction chamber in which a reaction can be performed to form a transition metal layer from a transition metal precursor on a substrate by a focused ion beam in step (b). Preferably, a chamber for depositing a transition metal component by gaseous volatile / non-volatile decomposition of an organo transition metal precursor by a focused ion beam (FIB) may be used.

[0033] Here, step (b) according to the present invention is a process of selectively depositing a transition metal layer on the substrate, and it is possible to freely deposit the transition metal layer in any shape according to a pattern prepared in advance by the user using a focused ion beam, and as the formed transition metal layer is converted into a transition metal chalcogenide layer by reaction with a chalcogen source in step (c) to be described later, it has the advantage of being able to finally form a transition metal chalcogenide layer of the shape desired by the user without the need for a lithography process using a photoresist, etc.

[0034] Here, the focused ion beam can deposit metallic components within an organometallic compound on the surface of a substrate by irradiating, for example, accelerated gallium ions and an alloy targeting a specific location on the substrate, using an organometallic compound as a precursor. This can induce only deposition by adjusting the voltage, acceleration voltage, current amount, etc. applied to the focused ion beam irradiation device, or it is possible to simultaneously perform etching on a desired portion of the substrate along with the deposition depending on the process conditions.

[0035] In addition, to form the transition metal layer in step (b) above, a precursor containing a transition metal component may be used. The precursor collides with an ion beam, such as gallium ions, irradiated at a specific location on the substrate to cause a local chemical reaction, thereby selectively reducing the transition metal component only at the specific location to form the transition metal layer. As for the precursor component for this purpose, an organometallic compound having one or more components selected from nickel, platinum, tin, molybdenum, tungsten, cobalt, bismuth, titanium, and palladium, as previously described, may be used as the precursor component.

[0036] That is, the above transition metal precursor can be used without limitation as long as it contains a transition metal and can deposit a transition metal layer on a substrate by a focused ion beam, for example, as a platinum component precursor, trimethyl(methylcyclopentadienyl)platinum, sodium chloride platinum, triphenylphosphine platinum, hexahydroxyplatinic acid, dichlorotetraaminoplatinum, dinitrodiaminoplatinum, etc. may be used, but are not limited thereto.

[0037] In addition, the deposition conditions for forming the above transition metal layer may vary depending on the physicochemical properties and structure of the precursor, the deposition thickness, etc. For example, when forming a platinum layer using trimethyl(methylcyclopentadienyl) platinum as a precursor, the platinum layer can be formed under conditions of 500 V - 30 kV (voltage), 30 keV (acceleration voltage), and 0.46 nA (current).

[0038] Meanwhile, the transition metal layer formed from step (b) above may have a thickness of 3 to 150 nm, preferably 5 to 100 nm, and more preferably 7 to 80 nm. If the thickness of the transition metal layer is thinner than 3 nm, a problem may arise in that an excessively thin film is formed during the formation of the transition metal chalcogenide layer in subsequent processes, and if it becomes thicker than 150 nm, the physicochemical properties when the transition metal chalcogenide is formed may deteriorate.

[0039] In addition, step (c) in the present invention corresponds to a step of converting the transition metal layer formed by the focused ion beam above into a transition metal chalcogenide layer. That is, step (c) corresponds to a process of applying a chalcogen source to the transition metal deposited on the substrate through step (b) to convert part or all of the transition metal layer into a transition metal chalcogenide layer through a chemical reaction.

[0040] At this time, the reaction chamber used may be the reaction chamber used in the preceding step (a), or a reaction chamber different from the reaction chamber used in step (a) that is suitable for converting the transition metal layer into a transition metal chalcogenide layer may be used, and preferably, a separate reaction chamber different from the reaction chamber used in step (a) may be used.

[0041] Here, step (c) may form a transition metal chalcogenide layer from a transition metal layer by chemical vapor deposition (CVD) or atomic layer deposition (ALD), and as a more specific method for this, a transition metal chalcogenide layer may be formed by heating a chalcogen source powder in a reaction chamber so that the transition metal layer on the substrate reacts with the vaporized or sublimated chalcogen source.

[0042] At this time, the chalcogen source may be any one selected from sulfur (S), selenium (Se), and tellurium (Te), preferably sulfur (S) or selenium (Se), and more preferably selenium (Se) when the transition metal is platinum.

[0043] In addition, in the present invention, the reaction conditions in the reaction chamber at step (c) can be performed in a pressure range of 0.1 to 10 torr and a temperature of 100 ℃ to 500 ℃. In this case, if the pressure is higher than 10 torr or the temperature is lower than 100 ℃, it is difficult for the chalcogen to vaporize, and if the pressure is lower than 0.1 torr, the economic feasibility of maintaining the reaction may decrease due to the high vacuum, and if the temperature is higher than 500 ℃, there is a possibility of decomposition of the chalcogen component or side reactions occurring.

[0044] For example, in order to form a platinum diselenide layer using selenium powder, the reaction can preferably be carried out under pressure conditions of 0.2 to 5 Torr and temperature conditions of 350 to 450 °C.

[0045] In addition, between steps (b) and (c) of the present invention, a step of forming an additional transition metal layer on the substrate by vaporizing or sublimating a transition metal source capable of forming a transition metal layer identical to the transition metal layer formed in step (b) within a reaction chamber may be included. That is, by using the transition metal layer formed in step (b) according to the present invention as a seed layer, a transition metal layer of the same composition can be formed to make the thickness of the already formed transition metal layer thicker, thereby mitigating the economic burden of using a high-cost focused ion beam in step (b), and also having the advantage of not requiring complex lithography technology for semiconductor processes, as deposition and patterning processes are possible in selective areas.

[0046] In this case, the step of forming the additional transition metal layer may be formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD), and additionally, the thickness of the additionally formed transition metal layer may be in the range of 10 to 70 nm, preferably 10 to 50 nm, and more preferably 20 to 30 nm.

[0047] Meanwhile, the present invention may further include, after step (c), step (d), a step of forming one or more metal electrodes at the ends of the transition metal chalcogenide layer formed in step (c).

[0048] Step (d) above corresponds to a configuration for manufacturing semiconductor devices, etc., by forming one or more transition metal chalcogenide layers through steps (a) to (c), and forming electrodes for electrical connection with an external power source or another transition metal chalcogenide layer in the transition metal chalcogenide layer.

[0049] In this case, step (d) may be performed by chemical vapor deposition (CVD) or atomic layer deposition (ALD), or electrodes may be formed using a focused ion beam as in step (b), and appropriate means may be used depending on the user's preference or the thickness of the electrodes and the pitch spacing of the electrodes.

[0050] In addition, the thickness of the metal electrode formed by step (d) above may be in the range of 10 to 200 nm, preferably 20 to 100 nm, and more preferably 50 to 70 nm.

[0052] In addition, the present invention can provide a two-dimensional transition metal chalcogenide thin film manufactured according to the manufacturing method according to the present invention, and can also provide an electronic component including the two-dimensional transition metal chalcogenide thin film.

[0053] As explained above, the two-dimensional transition metal chalcogenide thin film produced according to the manufacturing method of the present invention is patterned by selectively depositing a transition metal layer only on a desired portion of a substrate using a focused ion beam, and thereby the transition metal chalcogenide thin film can be manufactured in a patterned form. This fundamentally cures the degradation of surface properties of the transition metal chalcogenide thin film caused by residual photoresist from conventional lithography processes, thereby having the advantage of obtaining a thin film with excellent electrical and optical properties.

[0054] Furthermore, in the case of a focused ion beam, localized fine patterning is possible. Through the process of forming the transition metal layer and the transition metal chalcogenide layer obtained using this method, the final patterned transition metal chalcogenide layer can be manufactured more precisely, thereby offering the advantage of enabling precise patterning of semiconductor devices, electronic components, and the like.

[0056] The present invention will be explained in more detail through the following examples.

[0057] Example 1. Preparation of region-selective two-dimensional transition metal chalcogenide thin films using a focused ion beam

[0058] Focused Ion Beam (Dual Beam FIB system, Helios NanoLab) TM After providing a SiO2 (300 nm) / Si (001) substrate inside a chamber, a gas precursor atmosphere was formed by injecting a trimethyl(methylcyclopentadienyl) platinum precursor (Trimethyl(methylcyclopentadienyl)Pt, MeCpPtMe3) gas. Subsequently, a gallium beam was irradiated onto the substrate by applying a voltage of 500 V - 30 kV, an acceleration voltage of 30 keV, and a current of 0.46 nA to a focused ion beam device, thereby depositing a platinum layer with a thickness of 30 nm from the platinum precursor onto the substrate.

[0059] A boat containing a substrate with the above-mentioned platinum layer and selenium powder was placed inside a furnace serving as a reaction chamber, and then 1000 sccm of Ar was injected at a pressure of 1.5 Torr and a temperature of 400 ℃ and heated for 120 minutes to synthesize a platinum diselenide layer from the above-mentioned platinum layer.

[0061] Example 2. Characterization of two-dimensional transition metal chalcogenide thin films

[0062] A thin film having a platinum layer and a platinum diselenite layer formed according to Example 1 above was observed with an optical microscope and is shown in FIG. 2. As shown in FIG. 2, it can be confirmed that the platinum layer and the platinum diselenite layer prepared according to the present invention are formed with excellent uniformity in a specific region of the substrate.

[0063] In addition, to confirm whether the deposited platinum in Example 1 reacted with selenium, Raman spectrum analysis and X-ray photoelectron spectroscopy (XPS) were performed, and the results are shown in Figures 3 and 4, respectively.

[0064] More specifically, FIG. 3 is a figure showing the results of Raman spectrum analysis for a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention, and FIG. 4 is a figure showing the results of X-ray photoelectron spectroscopy (XPS) analysis for a two-dimensional platinum diselenide thin film synthesized according to Example 1 of the present invention. As shown in FIG. 3, it can be confirmed that A1g and Eg, which are typical phonon modes of a platinum diselenide layered material, are formed in the thin film, and through this, it can be confirmed that the platinum diselenide layered material was synthesized normally.

[0065] In addition, as shown in Figure 4 above, the chemical composition ratio of the thin film according to Example 1 was confirmed, and the ratio of platinum to selenium was found to be 1:2.12, which is similar to the ideal chemical composition ratio of platinum diselenide (PtSe2) of 1:2.

[0066] In addition, the results of observation using a transmission electron microscope and analysis using energy dispersive X-ray spectroscopy (EDS) to determine the surface state of the thin film prepared according to Example 1 are shown in Fig. 5. According to Fig. 5, it can be confirmed that the thin film is formed on the substrate with a uniform thickness. When mapping each element using energy dispersive X-ray spectroscopy (EDS), it can be confirmed that selenium atoms are similarly uniformly arranged on the upper part of the platinum layer uniformly formed by the focused ion beam, thereby confirming that platinum diselenide is uniformly formed throughout the entire thin film.

[0068] Example 3. Further preparation of patterned transition metal chalcogenide thin films using a focused ion beam

[0069] A platinum diselenide thin film was formed in the same manner as in Example 1, except that the focused ion beam was irradiated in the form of a character (KRICT), a figure, etc., and the result is shown in Fig. 6.

[0070] More specifically, FIG. 6 is a figure showing photographs of a platinum pattern before and after a selenization process performed by a focused ion beam in Example 1 of the present invention, and the results of Raman spectrum analysis of a patterned thin film sample after the selenization process. As shown in FIG. 6, it can be confirmed through the Raman spectrum that a platinum diselenide layer was synthesized through a selenization process of a platinum layer formed from a focused ion beam.

[0071] Therefore, it can be confirmed that the transition metal chalcogenide thin film according to the present invention can be finally manufactured through a chalcogenation reaction after preparing a transition metal layer in a patterned shape, such as various types of characters or figures, using a focused ion beam.

[0073] Example 4. Fabrication and evaluation of a device comprising a platinum diselenide thin film not subjected to lithography.

[0074] Using the method according to Example 1 above, a rectangular platinum diselenide thin film was prepared on a substrate, and then platinum atoms were deposited to a thickness of 70 nm using a focused ion beam on selective regions at both ends of the thin film, thereby fabricating a two-terminal device in which two platinum layers are connected through the platinum diselenide thin film. FIGS. 7 and 8 illustrate the method of manufacturing the device, the fabricated platinum diselenide device, and the optical properties thereof.

[0075] More specifically, FIG. 7 is a figure showing the results of analyzing the manufacturing method, cross-section, and electrical characteristics of a platinum diselenide device fabricated according to Example 4 of the present invention, and FIG. 8 is a figure showing the results of analyzing the optical characteristics of a platinum diselenide device fabricated according to Example 4 of the present invention. As shown in FIG. 7, it can be confirmed that it is possible to manufacture a new type of device in which a patterned transition metal chalcogenide thin film can be formed without undergoing a lithography process, and a platinum layer can be formed at both ends of the transition metal chalcogenide thin film using a focused ion beam to electrically connect them. It can be confirmed that the device exhibits electrical characteristics in which the current is linear with respect to voltage, and the resistance value is 4.35 kΩ, which falls within a suitable range for use as a semiconductor material.

[0076] In addition, as shown in FIG. 8 above, the intensity of the photocurrent generated by irradiating the device according to Example 4 with a green light laser of 532 nm wavelength is shown according to the change in voltage and power applied to the device. Looking at the left graph of FIG. 8, it can be seen that a photocurrent of about 2 μA flows constantly while the laser beam is irradiated onto the device under fixed voltage and power (20 V, 40 mW).

[0077] In addition, the middle and right graphs of Figure 8 show the change in photocurrent values ​​relative to the applied voltage or power, which confirms that the platinum diselenide thin film manufactured according to the present embodiment is suitable for use as a material for devices such as photosensors.

[0079] Although preferred embodiments of the present invention have been described above, the present invention is not limited thereto and can be implemented with various modifications within the scope of the claims, the detailed description of the invention, and the attached drawings, and it is obvious that such modifications also fall within the scope of the present invention.

Claims

Claim 1 (a) a step of providing a substrate in a reaction chamber; (b) a step of selectively depositing a transition metal layer on a desired area on the substrate using a focused ion beam; A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film, characterized by comprising: (c) a step of forming a transition metal chalcogenide layer from a transition metal layer by vaporizing or sublimating a chalcogen source capable of reacting with a transition metal in the transition metal layer deposited in step (b) to form a transition metal chalcogenide in a reaction chamber; wherein, between step (b) and step (c), a step of forming an additional transition metal layer on the substrate by vaporizing or sublimating a transition metal source capable of forming a transition metal layer identical to the transition metal layer formed in step (b) in a reaction chamber; wherein the step of forming the additional transition metal layer is formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). Claim 2 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film according to claim 1, wherein the substrate comprises one selected from silicon (Si), silicon oxide (SiO2), quartz, aluminum oxide (Al2O3), and graphene, or a mixture thereof. Claim 3 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film according to claim 1, wherein step (c) is formed by chemical vapor deposition (CVD) or atomic layer deposition (ALD). Claim 4 delete Claim 5 delete Claim 6 In claim 1, the metal in the transition metal layer is nickel, platinum, tin, molybdenum, tungsten, cobalt, bismuth, titanium, and palladium A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film characterized by being one of the following. Claim 7 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film according to claim 1, characterized in that the chalcogen source is selected from sulfur (S), selenium (Se), and tellurium (Te). Claim 8 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film according to claim 1, characterized in that the transition metal layer formed from step (b) has a thickness of 3 to 150 nm. Claim 9 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film according to claim 1, wherein step (c) is performed in a reaction chamber at a pressure range of 0.1 to 10 torr and at 100 ℃ to 500 ℃. Claim 10 A method for manufacturing a region-selective two-dimensional transition metal chalcogenide thin film, characterized in that, in claim 1, after step (c), (d) forming one or more metal electrodes at the ends of the transition metal chalcogenide layer formed in step (c). Claim 11 delete Claim 12 delete

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