Solder reflow apparatus and method of manufacturing an electronic device
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-08-03
- Publication Date
- 2026-08-12
Smart Images

Figure R1020220096838_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a solder reflow apparatus and a method for manufacturing an electronic device using the same. More specifically, the present invention relates to a solder reflow apparatus using a vapor phase soldering method and a method for manufacturing an electronic device using the same. Background Technology
[0002] In the field of surface mount technology, convection reflow, laser-assisted bonding, and vapor phase soldering methods may be used to solder solder paste. Among these, the vapor phase soldering method has the advantage of providing a uniform temperature distribution over the entire substrate, such as a printed circuit board (PCB), while the vapor inside the oven is saturated, and preventing overheating caused by setting a high target temperature because the boiling point of the heat transfer fluid is fixed.
[0003] However, when performing the solder reflow process according to the above-mentioned vapor phase soldering method, there is a problem in that effective heat transfer across the entire surface is difficult because the amount of vapor supplied to the central region and the peripheral region differs in the case of the existing substrate. The problem to be solved
[0004] One objective of the present invention is to provide a method for manufacturing an electronic device that can efficiently perform a solder reflow process through uniform heat transfer across the entire substrate. means of solving the problem
[0005] A method for manufacturing an electronic device according to exemplary embodiments for achieving one objective of the present invention provides a substrate having a plurality of mounting regions on which electronic components are each mounted. A plurality of vapor passage holes are formed in the substrate to penetrate the substrate. The electronic components are each disposed on the substrate via bumps. The bumps are soldered by a vapor phase reflow method, wherein at least a portion of a heat transfer fluid in a vapor state is supplied through the vapor passage holes of the substrate.
[0006] In a method for manufacturing an electronic device according to exemplary embodiments for achieving one objective of the present invention, a plurality of vapor passage holes are formed to penetrate a substrate having a plurality of mounting regions on which electronic components are each mounted. The electronic components are each placed on the substrate via bumps. The substrate on which the electronic components are placed is loaded into a vapor generation chamber containing a heat transfer fluid. The heat transfer fluid is heated to form the heat transfer fluid in a vapor state within the chamber. The bumps are soldered using the heat generated when the heat transfer fluid in a vapor state supplied through the vapor passage holes comes into contact with the surface of the substrate and condenses.
[0007] In a method for manufacturing an electronic device according to exemplary embodiments for achieving one objective of the present invention, a plurality of vapor passage holes are formed to penetrate a substrate having a plurality of mounting regions on which electronic components are each mounted. Solder paste is printed on the substrate pads of the substrate. Solders are formed on the input / output pads of the electronic components. The electronic components are placed on the substrate such that the solder is interposed between the input / output pads and the solder paste. The substrate on which the electronic components are placed is loaded into a vapor generation chamber containing a heat transfer fluid. The heat transfer fluid is heated to form the heat transfer fluid in a vapor state within the chamber. The bumps are soldered using the heat generated when the heat transfer fluid in a vapor state supplied through the vapor passage holes comes into contact with the surface of the substrate and condenses. Effects of the invention
[0008] According to exemplary embodiments, a plurality of vapor passage holes are formed to penetrate a substrate on which electronic components are each mounted, and the electronic components are each placed on the substrate via bumps, and the bumps can be soldered by a vapor phase reflow method. The substrate on which the electronic components are mounted is loaded into a vapor heating chamber of a vapor phase solder reflow device, and the solder can be reflowed by heating the solder paste through contact with a heat transfer fluid in a vapor state on the surface of the substrate.
[0009] At this time, the vapor at the bottom of the substrate stage can pass through the vapor passage holes of the substrate and be supplied to the solder and the space surrounding the solder. Accordingly, the vapor is sufficiently supplied to the area adjacent to the vapor passage holes of the substrate to achieve uniform heat transfer over the entire area of the substrate. As a result, defects in the reflow process for solders arranged with a fine pitch can be reduced and the bonding quality improved.
[0010] However, the effects of the present invention are not limited to the effects mentioned above and may be extended in various ways without departing from the spirit and scope of the present invention. Brief explanation of the drawing
[0011] FIG. 1 is a cross-sectional view showing a solder reflow apparatus according to exemplary embodiments. Figure 2 is a side view showing the solder reflow apparatus of Figure 1. FIG. 3 is a perspective view showing the substrate stage of the solder reflow apparatus of FIG. 1. FIG. 4 is a perspective view showing an article supported on the substrate stage of FIG. 3. FIG. 5 is a flowchart illustrating a method for manufacturing an electronic device according to exemplary embodiments. FIGS. 6 to 13 are drawings illustrating a method for manufacturing an electronic device according to exemplary embodiments. FIG. 14 is a plan view showing a strip substrate on which semiconductor chips according to exemplary embodiments are mounted. Specific details for implementing the invention
[0012] Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings.
[0013] FIG. 1 is a cross-sectional view showing a solder reflow apparatus according to exemplary embodiments. FIG. 2 is a side view showing the solder reflow apparatus of FIG. 1. FIG. 3 is a perspective view showing a substrate stage of the solder reflow apparatus of FIG. 1. FIG. 4 is a perspective view showing an article supported on the substrate stage of FIG. 3.
[0014] Referring to FIGS. 1 to 4, the solder reflow device (10) may include a steam generating chamber (100), a heater (110), and a substrate stage (200). Additionally, the solder reflow device (10) may further include a lifting / lowering drive unit for raising and lowering the substrate stage (200), a temperature sensing unit for monitoring the temperature inside the steam generating chamber (100), etc.
[0015] In exemplary embodiments, the solder reflow device (10) may be a vapor phase soldering device for soldering solder paste by heated saturated steam within a steam generation chamber (100).
[0016] The steam generating chamber (100) may have an oven shape that includes a lower reservoir for receiving a heat transfer fluid (F) and provides a space (101) filled with steam formed directly above when the heat cutting fluid (F) boils. The steam generating chamber (100) may extend in the vertical direction (Z) by a preset height. Within the steam generating chamber (100), the heat transfer fluid boils, causing steam to rise to the top, condense back into a liquid state at the top, and flow back into the lower reservoir.
[0017] The pressure inside the steam generating chamber (100) can be maintained at atmospheric pressure. Alternatively, the steam generating chamber (100) may be connected to an exhaust device, such as a vacuum pump, to regulate the pressure inside the steam generating chamber (100). The pressure inside the steam generating chamber may be maintained at a predetermined pressure to change the boiling point of the heat transfer fluid or for a soldering environment.
[0018] The heat transfer fluid (F) may be a chemical selected to provide the vapor required for soldering to occur. The heat transfer fluid may be selected considering its boiling point, environmental influences, and the corrosiveness of the generated vapor. The heat transfer fluid may include an inert organic liquid. For example, the heat transfer fluid may include a Galden solution of the perfluoropolyether (PFPE) series. The boiling point of the Galden solution may be 230°C.
[0019] A heater (110) can generate saturated steam by heating a heat transfer fluid (F) contained within a steam generation chamber (100). The heater (110) may include an electrical resistor immersed in the heat transfer fluid (F) at the bottom of the steam generation chamber (110). Alternatively, the heater (110) may include a coil-shaped resistor that wraps around the perimeter of the tank.
[0020] In addition, a heater (not shown) is installed on the side wall of the steam generation chamber (100) as part of a temperature control mechanism, so that the temperature of the steam generation chamber (100) can be controlled during the reflow process.
[0021] As illustrated in FIGS. 3 and 4, a substrate stage (200) can support an article (S) for soldering within a steam generation chamber (100). The substrate stage (200) may include a mesh-shaped support structure for supporting the article (S). The mesh-shaped support structure may include support wires (202) defining a plurality of open holes (201) that allow the movement of the steam. For example, the article (S) may include a substrate (20) on which an electronic component (30) is mounted via solder (40). The open holes may have a circular or polygonal shape. The sizes and shapes of the open holes, the thicknesses of the support wires, etc., may be determined by taking into account the temperature profile within the steam generation chamber.
[0022] A substrate (20) supported on a substrate stage (200) may have a plurality of vapor passage holes (26). The vapor passage holes (26) may be in communication with the open holes (201) of the substrate stage (200). Accordingly, vapor from the lower part of the substrate stage (200) may pass through the open holes (201) of the substrate stage (200) and the vapor passage holes (26) of the substrate (20) to be supplied to the solder (40) and the space surrounding the solder (40).
[0023] A substrate stage (200) can be installed to be raised and lowered within a steam generation chamber (100). A lifting and lowering drive unit for raising and lowering the substrate stage (200) may include various types of actuators such as a transfer rail, a transfer screw, or a transfer belt. Both ends of the substrate stage (200) are supported by transfer rods (210), and the substrate stage (200) can be raised and lowered by the lifting and lowering drive unit.
[0024] As shown in FIG. 2, an article (S) to be soldered is transferred into the steam generating chamber (100) through the gate (102) of the steam generating chamber (100), and the article (S) can be loaded onto a substrate stage (200) by a transfer mechanism (104), such as a guide rail or a transfer pusher.
[0025] After the item (S) is loaded, the Galden solution (F) can be heated by the heater (110) and begin to boil. The saturated steam of the Galden can be distributed within the space (101) of the steam generation chamber (100). At this time, the density of the saturated steam varies with height, and a temperature gradient can be formed accordingly.
[0026] For example, the temperature (T1) of the steam generating chamber (100) at the third height (H3) may be 100°C, the temperature (T2) of the steam generating chamber (100) at the second height (H2) may be 170°C, and the temperature (T3) of the steam generating chamber (100) at the first height (H1) may be 230°C. The solder (40) may include Sn-Ag-Cu (SAC) solder, Sn-Ag solder, etc. Since the boiling point of SAC solder is 217°C, the temperature (T3) at the third height (H1), which is the reflow section, may be maintained at 230°C.
[0027] Below, we will describe a method for performing a vapor phase reflow process using the solder reflow apparatus of Fig. 1.
[0028] First, an article (S) to be soldered is loaded into a steam generating chamber (100), and a heat transfer fluid (F) inside the steam generating chamber (100) can be heated.
[0029] In exemplary embodiments, a substrate (20) on which an electronic component (30) is mounted via solder (40) is transferred into the steam generating chamber (100) through the gate (102) of the steam generating chamber (100), and an article (S) can be loaded onto a substrate stage (200) by a transfer mechanism (104), such as a guide rail or a transfer pusher.
[0030] After the item (S) is loaded, the Galden solution (F) can be heated by the heater (110) and begin to boil. The saturated steam of the Galden can be distributed within the space (101) of the steam generation chamber (100). At this time, the steam has a density gradient according to height, and accordingly, a temperature gradient according to the vertical direction can be formed within the steam generation chamber (100).
[0031] After the article (S) is preheated at the third height (H3), it can be moved to the second height (H2) and soaked. The substrate (20) can be preheated to prevent various soldering defects and to provide a more robust and conductive bond. At the third and second heights (H3, H2), a secondary vapor phase may exist that is generated at a lower temperature than the main vapor layer. In this zone, soldering does not occur, and only the temperature rises.
[0032] The article (S) is moved to a first height (H1) so that the solder (40) can be reflowed. When the article (S) is submerged in steam at the first height (H1), the steam acts as a heat transfer medium. Because the temperature at the first height (H1) and the temperature of the substrate (20) are different, the steam can condense on the surface of the article (S) to form a layer. During condensation, the steam transfers latent heat to the surface of the substrate (20), thereby reflowing the solder paste.
[0033] At this time, the steam at the bottom of the substrate stage (200) can be supplied to the solder (40) and the space surrounding the solder (40) by passing through the open hole (201) of the substrate stage (200) and the steam passage holes (26) of the substrate (20). Accordingly, the steam is sufficiently supplied to the area adjacent to the steam passage holes (26) of the substrate (20) to achieve uniform heat transfer over the entire area of the article (S).
[0034] Subsequently, after the solder (40) is soldered, the article (S) can be moved to the top of the chamber to be cooled. Accordingly, the solder joints can be cooled and solidified.
[0035] Hereinafter, a method for manufacturing an electronic device using the solder reflow apparatus of FIG. 1 will be described. The case where the electronic device is a semiconductor package will be described. However, it will be understood that the method of manufacturing an electronic device according to exemplary embodiments is not limited thereto.
[0036] FIG. 5 is a flowchart illustrating a method for manufacturing an electronic device according to exemplary embodiments. FIGS. 6 through 13 are drawings illustrating a method for manufacturing an electronic device according to exemplary embodiments. FIG. 6 is a plan view illustrating a strip substrate on which semiconductor chips are mounted. FIG. 7 is a plan view illustrating a strip substrate according to another embodiment. FIGS. 8, 10, 11, and 12 are cross-sectional views taken along the AA' line of FIG. 6.
[0037] Referring to FIGS. 5 to 10, first, a substrate (20) including a plurality of substrate pads (22) is provided, a plurality of vapor passage holes (26, 28) are formed in the substrate (20) (S100), solder paste (24) is applied on the substrate pads (22) of the substrate (20) (S110), and solder (40) can be placed on the solder paste (24) (S120).
[0038] As illustrated in FIG. 6, the substrate (20) may be a multilayer circuit board as a package substrate having upper and lower surfaces facing each other. The substrate (20) may be a strip substrate for manufacturing semiconductor strips such as a printed circuit board (PCB).
[0039] The substrate (20) may include a first side (S1) and a second side (S2) that face each other by extending in a direction parallel to a second direction parallel to the upper surface, and a third side (S3) and a fourth side (S4) that face each other by extending in a direction parallel to a first direction (X direction) that is orthogonal to the second direction. The substrate (20) may have a rectangular shape when viewed in a plan view. The substrate (20) may have a predetermined area (e.g., 77.5 mm × 240 mm).
[0040] The substrate (20) may include a mounting area (MR) on which a semiconductor chip is mounted and a cutting area (CR) surrounding the mounting area (MR). A plurality of semiconductor chips (30) may each be disposed on the mounting areas (MR) of the substrate (20). For example, tens to hundreds of semiconductor chips (30) may be arranged in a matrix form on the substrate (20).
[0041] Next, a plurality of vapor passage holes (26, 28) penetrating the substrate (20) can be formed on the substrate (20). The vapor passage holes can be formed by a drilling process, a laser processing process, etc. The vapor passage holes may have a circular or polygonal shape.
[0042] In exemplary embodiments, a plurality of first vapor passage holes (26) may be formed in a first region of the substrate (20), and a plurality of second vapor passage holes (28) may be formed in a second region of the substrate (20).
[0043] The first region may be located within the cutting region (CR) of the substrate (20), and the second region may be located within the mounting region (MR) of the substrate (20). In this case, the second vapor passage hole (28) formed within the mounting region (MR) may be used as a sealing material passage hole through which the underfill, which is a sealing member between the upper surface of the substrate (20) and the semiconductor chip (30), passes when performing the molded underfill (MUF) process after the reflow process. Accordingly, when performing the molded underfill process, the sealing member moves through the sealing material passage hole at a uniform flow rate, thereby preventing the occurrence of voids within the underfill.
[0044] The first steam passage hole (26) has a first size diameter (D1), and the second steam passage hole (28) may have a second size diameter (D2) that is smaller than the first size. Alternatively, the first size diameter of the first steam passage hole (26) may be equal to or larger than the diameter of the second steam passage hole (28).
[0045] As illustrated in FIG. 7, in another embodiment, the substrate (20') may include a first mounting area (M1) for mounting a first semiconductor device and a second mounting area (M2) for mounting a second semiconductor device. The first mounting area (M1) may have a first planar area, and the second mounting area (MR2) may have a second planar area larger than the first planar area.
[0046] A plurality of third steam passage holes (26a, 26b) may be formed in the outer region of the first and second mounting regions (MR1, MR2), and a plurality of fourth steam passage holes (28a, 28b) may be formed within the first and second mounting regions (MR1, MR2).
[0047] The spacing, sizes, locations, etc., between the third steam passage holes (26a, 26b) and the fourth steam passage holes (28a, 28b) can be determined by considering the degree of heat transfer, the layout of bumps and wiring, etc.
[0048] For example, in a central region where heat transfer is relatively difficult, the third steam passage holes (26a) and the fourth steam passage holes (28b) may be formed relatively closer together. In a peripheral region where heat transfer is relatively easy, the third steam passage holes (26b) and the fourth steam passage holes (28b) may be formed relatively further apart.
[0049] Even within the second installation area (M2), the fourth steam passage holes (28b) may be formed relatively more frequently in the area relatively closer to the center area, and relatively fewer frequently in the area relatively closer to the surrounding area.
[0050] Additionally, the third and fourth steam passage holes (26a, 28a) formed in the central area have a diameter (D3) of the third size, and the third and fourth steam passage holes (26b, 28b) formed in the peripheral area may have a diameter (D4) of the fourth size, which is smaller than the third size.
[0051] Furthermore, the steam passage holes may not be formed within the first mounting area (MR1) having a relatively small planar area, and the steam passage holes may be formed only in the cutting area (CR) around the first mounting area (MR1).
[0052] As shown in FIG. 8, solder paste (24) can be applied to each of the plurality of substrate pads (22) of the substrate (20). The pitch between the plurality of substrate pads (22) of the substrate (20) can be within the range of tens of micrometers.
[0053] Solder paste (24) can be printed on the substrate pads (22) of the substrate (20). For example, the solder paste (24) can be printed by a stencil printer. The stencil may be a metal foil having a plurality of openings corresponding to an arrangement of solders to be subsequently placed. During printing, the solder paste (24) may be printed to fill the openings of the stencil. The solder paste (24) may include solder powder and flux. The flux may include a resin, a solvent, an activator, and an antioxidant.
[0054] Alternatively, the solder paste can be applied to the surface of the solder (40) formed on the semiconductor chip (30).
[0055] As illustrated in FIG. 9, solder (40) can be formed on an electronic component (30) mounted on a substrate (20). The electronic component (30) may be a semiconductor chip. Alternatively, the electronic component may be a semiconductor package. In this case, the substrate (20) may be a module board.
[0056] A plurality of input / output pads (32) may be formed on the first surface (31a) of the electronic component (30). Solders (40) may be formed on each of the input / output pads (32). Although not shown in the drawing, after forming an Under Bump Metallurgy (UBM) on the input / output pad (32), solder (40) may be formed on the Under Bump Metallurgy.
[0057] As illustrated in FIG. 10, an electronic component (30) can be placed on a substrate (20) such that solder (40) is interposed between the input / output pad (32) of the electronic component (30) and the solder paste (24). The semiconductor chips can be mounted on the substrate (20) by a flip chip bonding method.
[0058] Next, soldering can be performed using a vapor phase reflow method (S130).
[0059] Referring to FIG. 11, a substrate (20) with an electronic component (30) mounted thereon is loaded into a steam heating chamber (100) of the solder reflow device (10) of FIG. 1, and while moving vertically within the steam heating chamber (100), a heat transfer fluid in a steam state is brought into contact with the surface of the substrate (20) to heat the solder paste (24), thereby reflowing the solder (40) to form a solder bump (40) between the substrate pad (22) and the input / output pad (32).
[0060] In exemplary embodiments, after the substrate (20) is loaded, the Galden solution (F) may be heated by the heater (110) and begin to boil. The saturated steam of the Galden may be distributed within the space (101) of the steam generation chamber (100). At this time, the steam has a density gradient according to height, and accordingly, a temperature gradient according to the vertical direction may be formed within the steam generation chamber (100).
[0061] After the article (S) is preheated at the third height (H3), it can be moved to the second height (H2) and soaked. The substrate (20) can be preheated to prevent various soldering defects and to provide a more robust and conductive bond. At the third and second heights (H3, H2), a secondary vapor phase may exist that is generated at a lower temperature than the main vapor layer. In this zone, soldering does not occur, and only the temperature rises.
[0062] The article (S) is moved to a first height (H1) so that the solder (40) can be reflowed. When the article (S) is submerged in steam at the first height (H1), the steam acts as a heat transfer medium. Because the temperature inside at the first height (H1) and the temperature of the substrate (20) are different, the steam can condense on the surface of the article (S) to form a layer. During condensation, the steam transfers latent heat to the surface of the substrate (20), thereby reflowing the solder paste.
[0063] At this time, steam from the lower part of the substrate stage (200) can be supplied to the solder (40) and the space surrounding the solder (40) by passing through the open hole (201) of the substrate stage (200) and the first and second steam passage holes (26, 28) of the substrate (20). Accordingly, the steam can be sufficiently supplied to the area adjacent to the steam passage holes (26) of the substrate (20) to achieve uniform heat transfer over the entire area of the article (S).
[0064] Subsequently, after the solder (40) is soldered, the article (S) can be moved to the top of the chamber to be cooled. Accordingly, the solder joints can be cooled and solidified.
[0065] Referring to FIG. 12, a molding member (50) covering semiconductor chips (30) can be formed on a substrate (20) (S140).
[0066] In exemplary embodiments, a molding member (50) may be formed on a substrate (20) by a transfer molding device. The substrate (20) is placed within the molding space of the mold of the molding device, and with the lower mold and the upper mold clamped, a sealant is flowed at high temperature and high pressure so that the liquid sealant flows through the molding space and then solidifies to form a molding member (50) that covers semiconductor chips (30). For example, the sealant may include an epoxy mold compound (EMC).
[0067] Referring to FIG. 13, the substrate (20) can be cut by a sawing process to complete the semiconductor packages (60).
[0068] In exemplary embodiments, external connection members (not shown), such as solder balls, are formed on external connection pads on the lower surface of the substrate (20), and a cutting area (CR) of the substrate (20) can be removed using a cutting device such as a blade. At this time, the first vapor passage holes (26) formed in the cutting area (CR) can also be removed. Accordingly, the substrate (20) can be separated into individual semiconductor packages (P).
[0069] FIG. 14 is a plan view showing a strip substrate on which semiconductor chips according to exemplary embodiments are mounted.
[0070] Referring to FIG. 14, different types of semiconductor devices may be mounted on mounting regions (MR1, MR2, MR3, MR4) of the substrate (10). For example, the semiconductor devices may include logic semiconductor devices and memory devices. The logic semiconductor device may be an ASIC as a host, such as a CPU, GPU, or SoC. The memory device may include a High Bandwidth Memory (HBM) device.
[0071] In exemplary embodiments, the steam passage holes (26) may be formed considering the difference in heat transfer according to the layout of the wiring. For example, relatively many steam passage holes may be formed in areas where bumps are dense, and relatively few steam passage holes may be formed in areas where bumps are relatively sparse.
[0072] For example, first steam passage holes may be formed in the central region (R1) of the substrate (20), where heat transfer is relatively difficult, and second steam passage holes may be formed in the peripheral region (R2) of the substrate (20). In this case, the number of first steam passage holes within the same area may be greater than the number of second steam passage holes within the same area.
[0073] Additionally, the vapor passage holes can be formed relatively more frequently in areas where the copper wiring within the substrate (20) is relatively dense, and relatively fewer vapor passage holes can be formed in areas where the copper wiring is relatively sparse.
[0074] Through the aforementioned processes, a semiconductor package including a logic device or a memory device and a semiconductor module including the same can be mass-produced. The semiconductor package may include, for example, a logic device such as a central processing unit (CPU, MPU) or an application processor (AP); a volatile memory device such as, for example, an SRAM device, a DRAM device, or a high-bandwidth memory (HBM) device; and a non-volatile memory device such as, for example, a flash memory device, a PRAM device, an MRAM device, or an RRAM device.
[0075] Although the present invention has been described above with reference to embodiments thereof, those skilled in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols
[0076] 10: Solder reflow device 20: Substrate 22: PCB pad 24: Solder paste 26, 26a, 26b: First steam passage hole 28, 28a, 28b: Second steam passage hole 30: Semiconductor chip 32: Input / output pad 40: Solder 50: Molding component 60: Semiconductor package 100: Vapor generation chamber 102: Gate 104: Transfer mechanism 110: Heater 200: Substrate stage 201: Open hole 202: Support wire
Claims
Claim 1 A method for manufacturing an electronic device comprising: providing a substrate having a plurality of mounting regions in which electronic components are each mounted; forming a plurality of vapor passage holes in the substrate such that they completely penetrate from the lower surface to the upper surface of the substrate; arranging the electronic components on the substrate via bumps; and soldering the bumps by a vapor phase reflow method, wherein at least a portion of a heat transfer fluid in a vapor state is supplied through at least one of the vapor passage holes of the substrate, and wherein the plurality of vapor passage holes are formed within a cutting region separating the mounting regions of the substrate. Claim 2 delete Claim 3 A method for manufacturing an electronic device according to claim 1, wherein forming the plurality of vapor passage holes in the substrate comprises forming a plurality of first vapor passage holes in a first region of the substrate; and forming a plurality of second vapor passage holes in a second region of the substrate. Claim 4 A method for manufacturing an electronic device according to claim 3, wherein the first steam passage hole has a diameter of a first size, and the second steam passage hole has a diameter of a second size smaller than the first size. Claim 5 delete Claim 6 delete Claim 7 A method for manufacturing an electronic device according to claim 1, wherein soldering the bumps by the above-described vapor phase reflow method comprises loading a substrate having the electronic components disposed therein into a vapor generation chamber containing a heat transfer fluid; heating the heat transfer fluid to form the heat transfer fluid in a vapor state within the chamber; and soldering the bumps using the heat generated when the heat transfer fluid in a vapor state supplied through the vapor passage holes comes into contact with the surface of the substrate and condenses. Claim 8 A method for manufacturing an electronic device according to claim 1, wherein each of the electronic components is disposed on the substrate via the bumps comprises printing solder paste on substrate pads of the substrate; forming solders on input / output pads of the electronic components; and disposing of the electronic components on the substrate such that the solder is interposed between the input / output pads and the solder paste. Claim 9 A method for manufacturing an electronic device according to claim 1, further comprising forming a molding member to cover the electronic components on the substrate after soldering the bumps. Claim 10 A method for manufacturing an electronic device according to claim 9, further comprising cutting the substrate along a cutting region that separates the mounting regions. Claim 11 A method for manufacturing an electronic device comprising: forming a plurality of vapor passage holes on a substrate having a plurality of mounting regions on which electronic components are each mounted, such that they completely penetrate from the lower surface to the upper surface of the substrate; placing the electronic components on the substrate via bumps; loading the substrate on which the electronic components are placed into a vapor generation chamber containing a heat transfer fluid; heating the heat transfer fluid to form the heat transfer fluid in a vapor state within the chamber; and soldering the bumps using the heat generated when the heat transfer fluid in a vapor state supplied through at least one of the vapor passage holes comes into contact with the surface of the substrate and condenses, wherein the plurality of vapor passage holes are formed within a cutting region separating the mounting regions of the substrate. Claim 12 delete Claim 13 A method for manufacturing an electronic device according to claim 11, wherein forming the plurality of vapor passage holes in the substrate comprises forming a plurality of first vapor passage holes in a first region of the substrate; and forming a plurality of second vapor passage holes in a second region of the substrate. Claim 14 A method for manufacturing an electronic device according to claim 13, wherein the first steam passage hole has a diameter of a first size, and the second steam passage hole has a diameter of a second size smaller than the first size. Claim 15 delete Claim 16 delete Claim 17 A method for manufacturing an electronic device according to claim 11, wherein each of the electronic components is disposed on the substrate via the bumps comprises printing solder paste on substrate pads of the substrate; forming solders on input / output pads of the electronic components; and disposing of the electronic components on the substrate such that the solder is interposed between the input / output pads and the solder paste. Claim 18 A method for manufacturing an electronic device according to claim 11, further comprising: unloading the substrate from the vapor generating chamber after soldering the bumps; and forming a molding member on the substrate to cover the electronic components. Claim 19 A method for manufacturing an electronic device according to claim 17, further comprising cutting the substrate along a cutting region that separates the mounting regions. Claim 20 In claim 11, the method for manufacturing an electronic device comprises a heat transfer fluid including a Galden solution.
Citation Information
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