Gas conductance adjustment device for semiconductor process chamber

Abstract

The present invention relates to a gas conductance control device for a semiconductor process chamber, comprising: a baffle plate installed on the inner bottom surface of the process chamber having a plurality of baffle holes formed along the circumferential direction; an opening control mechanism disposed at the lower part of the baffle plate and having a plurality of control pins formed that match one-to-one with the baffle holes; and an operating mechanism connected to the opening control mechanism to operate the opening control mechanism in an up-and-down direction. Therefore, the gas conductance of the process chamber can be controlled more precisely by adjusting the opening of the baffle holes of the baffle plate.

Description

Technology Field

[0001] The present invention relates to a gas conductance control device for a semiconductor process chamber, and more specifically, to a gas conductance control device for a semiconductor process chamber that can control gas conductance by controlling the baffle hole opening of a baffle plate. Background Technology

[0002] In order to manufacture semiconductors, a deposition process is performed to form a thin film on the surface of a wafer, and there are various deposition processes such as PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), PECVD (Plasma enhanced Chemical Vapor Deposition), and ADL (Atomic Layer Deposition).

[0003] Generally, the deposition process is carried out by forming a thin film by creating a vacuum and plasma inside a process chamber (reactor) and supplying a reaction gas to deposit reaction gas components onto the wafer surface using physical and chemical methods.

[0004] Deposition equipment is equipped with a pump and a pressure regulating valve (throttle valve) to create and maintain a vacuum inside the process chamber. The pump creates a vacuum by drawing in and expelling air from inside the process chamber, and the pressure regulating valve is used to adjust the pressure inside the process chamber to a level desired by the user.

[0005] Meanwhile, regarding vacuum control, there is a value called gas conductance that expresses how well the gas inside the process chamber can move to the pump (the above gas conductance is also referred to as vacuum conductance. In this specification, it will be referred to as gas conductance).

[0006] The above gas conductance is related to the residence time of the reaction gas in the process chamber, and since the residence time of the reaction gas affects the film deposition quality, it is necessary to control the residence time of the reaction gas to deposit a precise and high-quality thin film. Accordingly, it is necessary to control the above gas conductance.

[0007] However, simply controlling the pump and pressure regulating valve as described above does not allow for precise and efficient control of the reaction gas's residence time, and consequently, there were limitations in depositing and forming the thin film desired by the user.

[0008] Conventional technology refers to technical information that the inventor possessed for the derivation of the present invention or acquired during the process of deriving the present invention, and it cannot necessarily be considered publicly known technology disclosed to the general public prior to the filing of the present invention. Prior art literature

[0009] Republic of Korea Published Patent No. 10-2023-0017610 (Published on Feb. 6, 2023) The problem to be solved

[0010] In resolving the aforementioned problems, the objective of the present invention is to provide a gas conductance control device for a semiconductor process chamber that enables more precise control of the gas conductance of the process chamber by controlling the opening of the baffle hole of the baffle plate using a mechanism having a pin shape.

[0011] The problems that the present invention aims to solve are not limited to those mentioned above, and other problems not mentioned will be clearly understood by a person skilled in the art to which the present invention belongs from the description below. means of solving the problem

[0012] A gas conductance control device for a semiconductor process chamber according to an embodiment of the present invention comprises: a baffle plate having a plurality of baffle holes formed along the circumferential direction and installed on the inner bottom surface of the process chamber; an opening control mechanism disposed at the lower part of the baffle plate and having a plurality of control pins formed that match one-to-one with the baffle holes; and an operating mechanism connected to the opening control mechanism to operate the opening control mechanism in an up-and-down direction.

[0013] In addition, the above-mentioned opening adjustment mechanism is installed inside an exhaust space formed by the annular upper groove formed on the lower surface of the baffle plate and the annular lower groove formed on the bottom surface of the process chamber where the baffle plate is installed being fitted together, and is connected to a connecting shaft of the above-mentioned operating mechanism inserted through an axial hole formed through the bottom surface of the lower groove.

[0014] In addition, the above opening adjustment mechanism has the adjustment pin formed protruding upward on the upper surface of a circular ring-shaped body, and a plurality of connecting parts formed protruding downward at equal intervals in the circumferential direction on the lower surface of the body, and the connecting shaft is connected to the connecting parts.

[0015] In addition, the above-mentioned operating mechanism is connected and installed at each connection part of the above-mentioned opening adjustment mechanism, and is operated and controlled in the same way by the same control unit.

[0016] Additionally, the above operating mechanism includes a nut member screw-coupled to the lower part of the connecting shaft, a pinion gear meshing with the outer surface of the nut member, a motor installed on the rotation shaft of the pinion gear, and a case in which the lower part of the connecting shaft, the nut member, the pinion gear, and the motor are housed.

[0017] In addition, the above operating mechanism has a support member installed on the inner bottom surface of the case, and a bearing installed between the support member and the nut member.

[0018] In addition, the above operating mechanism has a bellows installed between the lower surface of the process chamber and the upper surface of the case to surround the outer part of the connecting shaft, and seals are installed between the upper end of the bellows and the lower surface of the process chamber and between the lower end of the bellows and the upper surface of the case, respectively.

[0019] In addition, the gas conductance control device of the semiconductor process chamber may include a first jig that is in close contact with the connection part and sets the radial position of the opening control mechanism, and a second jig into which the control pin is inserted to align the center of the control pin with the center of the baffle hole.

[0020] In addition, the first jig has a semicircular cross-section and an inner surface formed as a circular surface with the same curvature as the connecting part of the opening adjustment mechanism, and a projection is formed on the lower surface that is inserted into a projection groove formed on the bottom surface of the lower groove of the process chamber.

[0021] In addition, the second jig is formed in a circular tubular shape, and when inserted into the baffle hole of the baffle plate, the upper end of the adjustment pin is inserted into the lower inner diameter portion. Effects of the invention

[0022] As described above, the gas conductance control device of a semiconductor process chamber according to the present invention can more precisely control the gas conductance of the process chamber by controlling the opening of the baffle hole of the baffle plate using a mechanism having a pin shape.

[0023] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art to which the present invention pertains from the description below. Brief explanation of the drawing

[0024] Figure 1 is a plan view and a cross-sectional view showing the state in which a baffle plate is installed inside a semiconductor process chamber. FIG. 2 is a perspective view showing a state in which an opening control mechanism, which is a component of a gas conductance control device of a semiconductor process chamber according to the present invention, is positioned at the bottom of the baffle plate. FIG. 3 is an installation state diagram of a gas conductance control device of a semiconductor process chamber according to the present invention, showing the opening control mechanism in a lowered state. Figure 4 is a plan view of the bottom surface of the process chamber with the baffle plate removed. Figure 5 is a diagram showing the raised state of the above-mentioned opening adjustment mechanism. Figure 6 is an installation diagram of jigs used to install the above-mentioned opening adjustment mechanism in the correct position. Specific details for implementing the invention

[0025] In the present invention, the attached drawings may be illustrated with exaggerated expressions to distinguish it from the prior art, ensure clarity, and facilitate the understanding of the technology. Furthermore, the terms described below are defined considering their functions in the present invention; since these terms may vary depending on the intentions or conventions of the user or operator, their definitions should be based on the technical content throughout this specification. Meanwhile, the embodiments are merely exemplary details of the components presented in the claims of the present invention and do not limit the scope of the rights of the present invention; the scope of rights should be interpreted based on the technical concept throughout the specification of the present invention.

[0026] Throughout the specification, when a configuration is described as "including" a configuration, this means that, unless specifically stated otherwise, it does not exclude other configurations but may include additional configurations.

[0027] Furthermore, when it is said that one configuration is "connected," "connected," or "combined" with another configuration, this means that it is not only "directly connected," "directly connected," or "directly combined," but also that there may be cases where it is "connected with another configuration interposed," "connected with another configuration interposed," or "combined with another configuration interposed." On the other hand, when it is said that one configuration is "directly connected," "directly connected," or "directly combined" with another configuration, it should be understood that there is no other configuration in between.

[0028] In addition, when directional terms such as "front," "back," "up," "down," "left," "right," "first end," "other end," and "both ends" are used, they are used exemplarily in relation to the orientation of the disclosed drawings and should not be interpreted restrictively, and when terms such as "first" and "second" are used, they are terms used to distinguish each configuration and should not be interpreted restrictively.

[0029] In order to more clearly explain the features of the embodiments of the present invention, detailed descriptions of matters widely known to those skilled in the art to which the following embodiments pertain are omitted. Additionally, detailed descriptions of parts in the drawings that are unrelated to the description of the embodiments are omitted.

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0031] FIG. 1 is a plan view and a cross-sectional view showing a state in which a baffle plate is installed inside a semiconductor process chamber; FIG. 2 is a perspective view showing a state in which an opening control mechanism, which is a component of a gas conductance control device of a semiconductor process chamber according to the present invention, is positioned at the bottom of the baffle plate; FIG. 3 is a diagram showing the installation state of a gas conductance control device of a semiconductor process chamber according to the present invention, showing the opening control mechanism in a lowered state; FIG. 4 is a plan view of the bottom surface of the process chamber with the baffle plate removed; FIG. 5 is a diagram showing the opening control mechanism in a raised state; and FIG. 6 is a diagram showing the installation state of jigs used to install the opening control mechanism in a correct position.

[0032] Referring to FIGS. 1 to 6, a gas conductance control device for a semiconductor process chamber according to an embodiment of the present invention includes a baffle plate (20), an opening control mechanism (30), and an operating mechanism (40).

[0033] First, the process chamber (10) (hereinafter referred to as 'chamber (10)' for convenience) and the baffle plate (20) installed therein will be described. As shown in FIG. 1, a space is formed inside the chamber (10) where a wafer is introduced and a deposition process is performed. A baffle plate (20) in the shape of an annular plate is installed on the bottom of the space inside the chamber (10).

[0034] The above baffle plate (20) has baffle holes (21) formed through it in the vertical direction at equal intervals along the entire circumferential direction.

[0035] A center hole (11) is formed in the center of the bottom surface of the chamber (10), through which the central axis of a heater supporting a wafer passes. The baffle plate (20) is installed on the outer side of the center hole (11), and the center hole (11) and the baffle plate (20) are concentric with each other.

[0036] An annular lower groove (12) concentric with the center hole (11) is formed in a downwardly concave shape on the radially outer portion of the bottom surface of the chamber (10). The lower groove (12) is formed on the underside of the baffle plate (20).

[0037] Corresponding to the lower groove (12), an upper groove (22) is formed on the bottom surface of the baffle plate (20), which is generally annular in shape and has a cross-section that is concave upward. The lower groove (12) and the upper groove (22) are placed together to form an exhaust space (not shown in the drawing). An exhaust hole (13) is formed on one side of the exhaust space, communicating with the outside of the chamber (10). Although not shown, a flow control valve (throttle valve) and a vacuum pump are installed in the flow path connected to the exhaust hole (13).

[0038] Accordingly, when the vacuum pump is operated, the gas in the internal space of the chamber (10) moves to the exhaust space through the baffle hole (21) of the baffle plate (20), and then is discharged to the outside of the chamber (10) through the exhaust hole (13).

[0039] The opening adjustment mechanism (30) is formed in an overall circular ring shape. The opening adjustment mechanism (30) is formed in a circle having the same diameter as the circle connecting the baffle holes (21) of the baffle plate (20). That is, the length (radius) from the center of the inner diameter of the opening adjustment mechanism (30) to the midpoint of the body of the opening adjustment mechanism (30) is the same as the length (radius) from the center of the baffle plate (20) to the center of the baffle holes (21).

[0040] A plurality of adjustment pins (31) are formed protruding upward on the upper surface of the above-mentioned opening adjustment mechanism (30). The adjustment pins (31) correspond one-to-one with a plurality of baffle holes (21) formed in the baffle plate (20). That is, the number of baffle holes (21) and adjustment pins (31) are equal to each other, and both are formed at equal intervals.

[0041] The above adjustment pin (31) is formed in a shape in which the diameter increases as it goes from the top to the bottom. That is, the outer surface of the adjustment pin (31) is formed at an angle like the outer surface of a cone.

[0042] The lower diameter of the adjustment pin (31) is formed to be smaller than the diameter of the baffle hole (21). Therefore, the adjustment pin (31) can rise from below the baffle hole (21) and be fully inserted into the interior of the baffle hole (21). Thus, as the amount of the adjustment pin (31) inserted into the interior of the baffle hole (21) increases, the opening of the flow path, i.e., the opening area, decreases, and when the adjustment pin (31) is fully inserted into the interior of the baffle hole (21), the upper surface of the opening adjustment mechanism (30) blocks the exit of the baffle hole (21).

[0043] Therefore, by adjusting the upper and lower positions of the adjustment pin (31), the opening of the flow path through the baffle hole (21) can be controlled, and it can also be fully opened or closed.

[0044] A plurality of connecting parts (32) are formed on the lower surface of the opening adjustment mechanism (30) at equal intervals in the circumferential direction. The connecting parts (32) are cylindrical in shape and are formed to protrude vertically downward from the lower surface of the opening adjustment mechanism (30). The connecting parts (32) have a diameter larger than the width of the body of the opening adjustment mechanism (30) (see FIG. 6).

[0045] The above connecting part (32) is a part connected to the above operating mechanism (40), and an operating mechanism (40) is connected to each connecting part (32). That is, the above opening adjustment mechanism (30) is operated to move up and down by a plurality of operating mechanisms (40). Although not shown, the above operating mechanism (40) is operated and controlled equally by a single control unit.

[0046] In addition, since the opening adjustment mechanism (30) has a circular ring shape, if a total of three connecting parts (32) are formed at 120° intervals, the opening adjustment mechanism (30) can be stably supported in a horizontal state. That is, the opening adjustment mechanism (30) moves in the up and down direction while being supported at three points by three operating mechanisms (40), and the three operating mechanisms (40) connected to the three connecting parts (32) are always controlled in the same way by a single control unit, so that the opening adjustment mechanism (30) can always maintain a horizontal position.

[0047] The above operating mechanism (40) is a device that controls the opening of the baffle hole (21) by moving the opening control mechanism (30) in the up and down direction to control the amount by which the control pin (31) is inserted into the baffle hole (21). Accordingly, the gas conductance of the chamber (10) can be controlled by controlling the operation of the above operating mechanism (40) to control the opening of the baffle hole (21).

[0048] The above operating mechanism (40) includes a connecting shaft (41) connected to the connecting part (32) of the opening adjustment mechanism (30), a nut member (42) screw-coupled to the connecting shaft (41) to move the connecting shaft (41) in an up-and-down direction, a pinion gear (43) meshing with the nut member (42), a motor (44) installed at the end of the rotation shaft to rotate the pinion gear (43), and a case (45) in which the lower part of the connecting shaft (41), the nut member (42), the pinion gear (43), and the motor (44) are housed.

[0049] The above connecting shaft (41) is inserted through an axial hole (14) formed downwardly through the lower groove (12) of the chamber (10) and coupled with the connecting part (32) of the opening adjustment mechanism (30). The above connecting shaft (41) acts as the output shaft of the operating mechanism (40) and operates in the vertical up-and-down direction.

[0050] The above connecting shaft (41) and the above connecting part (32) only need to maintain the assembled state of the connecting shaft (41) and the connecting part (32) when the connecting shaft (41) moves up and down, and there is no need to maintain a strong connection state. Therefore, for example, a connecting projection (not shown) may be formed on one side of both sides and a connecting groove (not shown) may be formed on the other side, and they may be assembled together in a structure in which the connecting projection is pressed into the connecting groove. By adopting such a structure, assembly is possible simply by pressing the connecting part (32) and the connecting shaft (41) in the axial direction, so there is no need to rotate parts like in a screw structure, making assembly very convenient. However, the assembly structure using the connecting projection and the connecting groove is merely an example and is not limited thereto.

[0051] A male screw portion (41a) with a screw machined on its outer surface is formed on the lower part of the above connecting shaft (41).

[0052] The nut member (42) is a disc-shaped member and has a female screw formed on its inner surface that is screw-fastened to the male screw portion (41a) of the connecting shaft (41). Accordingly, when the nut member (42) is rotated at a certain position, the connecting shaft (41) rises or falls depending on the direction of rotation.

[0053] The pinion gear (43) is a driving gear installed on the rotational shaft of the motor (44) and meshes with the gear formed on the outer surface of the nut member (42). Therefore, the rotational force of the motor (44) is transmitted to the nut member (42) to rotate the nut member (42).

[0054] The motor (44) is operated by a control unit not shown as described above. The motor (44) is controlled in a rotational direction and amount of rotation by the control unit, thereby enabling control of the upward or downward movement of the connecting shaft (41) and the amount of movement.

[0055] Accordingly, the upper and lower positions of the above-mentioned opening adjustment mechanism (30), more specifically the adjustment pin (31), can be precisely controlled, and the gas conductance of the chamber (10) can be controlled by controlling the opening of the baffle hole (21) by the adjustment pin (31).

[0056] The above case (45) houses components such as the lower part of the connecting shaft (41), the nut member (42), the pinion gear (43), and the motor (44). The above case (45) is fixedly installed on one side horizontal plane of the semiconductor deposition equipment including the chamber (10). Thus, with the chamber (10), baffle plate (20), and the above case (45) fixed, the connecting shaft (41) can move up and down to adjust the upper and lower position of the opening adjustment mechanism (30).

[0057] A support member (46) and a bearing (47) may be further installed inside the case (45). The support member (46) is installed at the center of the bottom surface of the case (45) and supports the nut member (42) via the bearing (47). By installing the bearing (47) between the nut member (42) and the support member (46), the nut member (42) can be supported in a rotatable state.

[0058] Meanwhile, a bellows (48) that surrounds the periphery of the connecting shaft (41) may be installed between the case (45) and the chamber (10). The upper and lower ends of the bellows (48) are respectively fixed in close contact with the lower surface of the chamber (10) and the upper surface of the case (45), and a sealing (49) may be installed between each contact surface. In FIG. 3, the sealing (49) is shown only between the lower surface of the chamber (10) and the upper end of the bellows (48) for convenience.

[0059] As described above, by installing the bellows (48) and sealing (49), gas leakage through the shaft hole (14) can be prevented.

[0060] FIG. 6 illustrates the installation of the opening adjustment mechanism (30) at an accurate position using a jig. The jig includes a first jig (60) and a second jig (70).

[0061] The first jig (60) is a jig for positioning the opening adjustment mechanism (30) in the radial direction. The first jig (60) is a member having a semicircular cross-section (see FIG. 2), and in particular, its inner surface is formed as a circular surface with the same curvature as the connecting part (32) of the opening adjustment mechanism (30). Therefore, the connecting part (32) can be seated on the inner surface of the first jig (60) (see FIG. 2 and FIG. 6).

[0062] A circular protrusion (61) is formed on the lower surface of the first jig (60). Corresponding to the protrusion (61), a protrusion groove (15) is formed on the bottom surface of the lower groove (12) of the chamber (10). Thus, the first jig (60) can be installed in the lower groove (12) of the chamber (10) by inserting the protrusion (61) into the protrusion groove (15).

[0063] The first jig (60) is provided in equal numbers to match the connecting part (32) in a one-to-one manner. Accordingly, three first jigs (60) are first installed in the lower groove (12) at 120° intervals, and then the opening adjustment mechanism (30) is installed in the lower groove (12). At this time, by seating the connecting parts (32) of the opening adjustment mechanism (30) on the inner circumference of the corresponding first jig (60), the center of the opening adjustment mechanism (30) can be installed in an accurate position so that it coincides with the center of the chamber (10), that is, the center of the center hole (11).

[0064] The second jig (70) is a jig used to position the adjustment pin (31) in a circumferential direction. The second jig (70) has a circular tubular shape and has an inner diameter size into which a portion of the upper end of the adjustment pin (31) can be inserted. Although not illustrated, a catch may be formed on the outer surface of the second jig (70) to catch on the periphery of the entrance of the baffle hole (21) in order to ensure a constant depth of insertion of the second jig (70) into the baffle hole (21) (inserted downward from the upper part of the baffle plate (20)).

[0065] As described above, a second jig (70) is inserted into one of the multiple baffle holes (21) formed in the baffle plate (20), and the upper end of the adjustment pin (31) is inserted into the lower inner diameter portion of the second jig (70), thereby aligning the center of the baffle hole (21) and the adjustment pin (31).

[0066] The installation process of the gas conductance control device according to the present invention using the first jig (60) and the second jig (70) is as follows.

[0067] First, the first jig (60) is installed at three points of the lower groove (12) of the chamber (10).

[0068] Next, the above opening adjustment mechanism (30) is set up to fit the above first jig (60).

[0069] Next, the connecting shaft (41) of the operating mechanism (40) is connected to the connecting part (32) of the opening adjustment mechanism (30).

[0070] Next, the first jig (60) is removed, and the baffle plate (20) is assembled. On the bottom surface of the chamber (10), a plurality of pin grooves (16) for assembling the baffle plate (20) are formed along the circumferential direction, and correspondingly, an equal number of pin grooves (23) are formed on the lower surface of the baffle plate (20). Therefore, by inserting a pin (50) into the pin groove (16) of the chamber (10) and fitting the pin groove (23) to the pin (50) to assemble the baffle plate (20), the baffle plate (20) is installed in an accurate position.

[0071] When designing, the position of the baffle hole (21) according to the assembly position of the baffle plate (20), the installation position of the first jig (60), and the position of the adjustment pin (31) of the opening adjustment mechanism (30) installed by the first jig (60) are taken into account, and when assembly is performed up to this stage, the positions of the baffle hole (21) and the adjustment pin (31) are almost identical.

[0072] In that state, by inserting the second jig (70) into the baffle hole (21) and fitting it onto the top of the adjustment pin (31) one to several times, the center of the baffle hole (21) and the adjustment pin (31) can be completely aligned.

[0073] Afterward, the case (45) of the above-mentioned operating mechanism (40) is fixedly installed on the corresponding mounting surface of the deposition equipment, and after the end fixing operation of the bellows (48) is performed, the second jig (70) is removed, and the installation of the gas conductance control device according to the present invention is completed.

[0074] As described above, the gas conductance control device according to the present invention can control the opening of the baffle hole (21) of the baffle plate (20) by the control pin (31) by controlling the upper and lower positions of the opening control mechanism (30) by the operating mechanism (40).

[0075] Therefore, by adjusting the opening area (flow path cross-sectional area) of the baffle hole (21), the gas conductance can be finely increased or decreased.

[0076] Therefore, by finely adjusting the gas conductance during the deposition process, more precise thin film deposition is possible, which helps improve the quality of the semiconductor.

[0077] In addition, the gas conductance control device according to the present invention has the control pins (31) formed in a circular ring-shaped opening control mechanism (30), and the opening control mechanism (30) is supported at three points by three operating mechanisms (40) that are equally controlled, thereby allowing it to move up and down while always maintaining a horizontal state.

[0078] Therefore, by ensuring that the operating state of each control pin (31) for all baffle holes (21) is the same, the opening of all baffle holes (21) can be controlled equally, which helps to ensure uniformity of the thin film deposition thickness according to the position on the wafer surface.

[0079] In addition, the gas conductance control device according to the present invention can prevent gas leakage through the shaft hole (14) formed in the chamber (10) by installing a bellows (48) that seals the surrounding space of the connecting shaft (41) between the lower surface of the chamber (10) and the case (45) of the operating mechanism (40). Therefore, the vacuum state inside the chamber (10) can be stably maintained.

[0080] In addition, the gas conductance control device according to the present invention can accurately set the positions of the opening control mechanism (30) and the control pin (31) by using the first jig (60) and the second jig (70).

[0081] Therefore, by ensuring that all adjustment pins (31) and baffle holes (21) are precisely aligned, the opening of the baffle holes (21) by the adjustment pins (31) can be adjusted accurately, smoothly, and uniformly in all baffle holes (21).

[0082] As described above, the gas conductance control device for a semiconductor process chamber according to the present invention can more precisely control the gas conductance of the process chamber by controlling the opening of the baffle hole of the baffle plate using a mechanism having a pin shape.

[0083] As described above, the present invention has been explained with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and it should be understood that various modifications and equivalent alternative embodiments are possible based on the ordinary knowledge of the art to which the art belongs. Accordingly, the true technical scope of protection of the present invention is defined by the claims described below and should be determined based on the specific details of the invention described above. Industrial applicability

[0084] The present invention relates to a gas conductance control device for a semiconductor process chamber and can be used in industrial fields that utilize a vacuum chamber and perform processes requiring gas conductance control. Explanation of the symbols

[0085] 10: Chamber 11: Center Hall 12: Lower groove 13: Exhaust hole 14: Axis hole 15: Protrusion groove 16: Pin Home 20: Baffle Plate 21: Baffle hole 22: Upper groove 23: Pin home 30: Opening adjustment mechanism 31: Adjustment pin 32: Connection part 40: Actuating mechanism 41: Connecting shaft 41a: Male thread section 42: Nut member 43: Pinion gear 44: Motor 45: Case 46: Support member 47: Bearing 48: Bellows 49: Sealing 50: Pin 60: 1st jig 61: Protrusion 70: 2nd Jig

Claims

Claim 1 A gas conductance control device for a semiconductor process chamber, comprising: a baffle plate installed on the inner bottom surface of a process chamber having a plurality of baffle holes formed along the circumferential direction; an opening control mechanism disposed at the lower part of the baffle plate and having a plurality of control pins formed that match one-to-one with the baffle holes; and an operating mechanism connected to the opening control mechanism to operate the opening control mechanism in an up-and-down direction; wherein the opening control mechanism is installed inside an exhaust space formed by an annular upper groove formed on the lower surface of the baffle plate and an annular lower groove formed on the bottom surface of the process chamber where the baffle plate is installed, and is connected to a connecting shaft of the operating mechanism inserted through an axial hole formed through the bottom surface of the lower groove, and wherein the opening control mechanism has the control pins formed protruding upward on the upper surface of a circular ring-shaped body, and a plurality of connecting parts formed protruding downward at equal intervals in the circumferential direction on the lower surface of the body, and the connecting shaft is connected to the connecting parts. Claim 2 delete Claim 3 delete Claim 4 A gas conductance control device for a semiconductor process chamber according to claim 1, wherein the operating mechanism is connected and installed at each connection part of the opening control mechanism and is operated and controlled in the same way by the same control unit. Claim 5 A gas conductance control device for a semiconductor process chamber according to claim 1, wherein the operating mechanism comprises a nut member screw-coupled to the lower part of the connecting shaft, a pinion gear meshing with the outer circumference of the nut member, a motor installed on a rotating shaft of the pinion gear, and a case in which the lower part of the connecting shaft, the nut member, the pinion gear, and the motor are housed. Claim 6 A gas conductance control device for a semiconductor process chamber according to claim 5, wherein the operating mechanism is characterized in that a support member is installed on the inner bottom surface of the case, and a bearing is installed between the support member and the nut member. Claim 7 A gas conductance control device for a semiconductor process chamber according to claim 5, wherein the operating mechanism is characterized in that a bellows is installed between the lower surface of the process chamber and the upper surface of the case to surround the outer part of the connecting shaft, and a seal is installed between the upper end of the bellows and the lower surface of the process chamber and between the lower end of the bellows and the upper surface of the case, respectively. Claim 8 A gas conductance control device for a semiconductor process chamber according to claim 1, wherein the gas conductance control device for the semiconductor process chamber comprises a first jig that is in close contact with the connection part and sets the radial position of the opening control mechanism, and a second jig into which the control pin is inserted to align the center of the control pin with the center of the baffle hole. Claim 9 A gas conductance control device for a semiconductor process chamber according to claim 8, wherein the first jig has a semicircular cross-sectional shape, the inner surface is formed as a circumferential surface with the same curvature as the connecting part of the opening adjustment mechanism, and a projection is formed on the lower surface to be inserted into a projection groove formed on the bottom surface of the lower groove of the process chamber. Claim 10 A gas conductance control device for a semiconductor process chamber according to claim 8, wherein the second jig is formed in a circular tubular shape, and when inserted into the baffle hole of the baffle plate, the upper end of the control pin is inserted into the lower inner diameter portion.

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