Three dimensional semiconductor memory device, electronic system including the same, and method of fabricating the same

Abstract

A three-dimensional semiconductor memory device, an electronic system including the same, and a method for manufacturing the same are provided. The device comprises: lower selection lines disposed on a substrate and extending in a first direction, wherein the lower selection lines are spaced apart from each other in a second direction parallel to the upper surface of the substrate and intersecting the first direction; an intermediate stack structure comprising electrode layers and electrode interlayer insulating films alternately stacked on the lower selection lines; upper selection lines located on the intermediate stack structure and extending in the first direction, wherein the upper selection lines are spaced apart from each other in the second direction; and a first polishing stop film interposed between the intermediate stack structure and the lower selection lines, wherein the first polishing stop film comprises a material different from that of the electrode interlayer insulating films.

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