Apparatus for treating substrate and method for processing a substrate

Abstract

The present invention provides a device for processing a substrate. The device for processing a substrate comprises a housing having an open upper surface and a processing space inside, a window unit for sealing the open upper surface of the housing, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying gas to the processing space, and a plasma source for exciting the gas supplied to the processing space into plasma, wherein the plasma source is provided as an antenna including a coil to which power is applied, and the coil may be located inside the window unit.

Description

Technology Field

[0001] The present invention relates to an apparatus and method for processing a substrate, and more specifically, to a substrate processing apparatus and a substrate processing method for plasma processing a substrate. Background Technology

[0002] To manufacture semiconductor devices, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed. Among these processes, the photolithography process includes a coating process that applies photoresist to the surface of a substrate to form a photoresist film, an exposure process that transfers a circuit pattern onto the photoresist film formed on the substrate, and a development process that selectively removes the photoresist film formed on the substrate from the exposed area or the opposite area.

[0003] FIG. 1 is a schematic perspective view showing a typical substrate after the photolithography process is completed. Referring to FIG. 1, a photoresist film that is not selectively removed exists on the upper side of the film to be etched. In the subsequent etching process, the film to be etched is removed from the photoresist film and the film to be etched using a plasma having ions, radicals, and electrons. The ions, radicals, and electrons have linearity and remove the film to be etched.

[0004] During the photolithography process, any part of the photoresist film that should not be removed may be damaged or removed (see FIG. 1A), or impurities generated during the photolithography process (byproduct, see FIG. 1B) may remain in the area where the photoresist film was removed. In this case, damage to the photoresist film is exacerbated by the plasma during the subsequent etching process, and consequently, the plasma reaches the area below where the photoresist film was formed. This results in the removal of unintended regions of the film to be etched by the plasma, causing a decrease in the processing uniformity of the substrate during the etching process. (Patent Document 1) WO 2020-101997 A The problem to be solved

[0005] One objective of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

[0006] In addition, the present invention has one objective of providing a substrate processing apparatus and a substrate processing method capable of shortening the process cycle by changing the temperature of the substrate to a temperature suitable for the process.

[0007] In addition, the present invention has one objective of providing a substrate processing apparatus and a substrate processing method capable of minimizing damage to the photoresist film by plasma by forming a protective film on the surface of the photoresist film.

[0008] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by a person skilled in the art from the description below. means of solving the problem

[0009] The present invention provides a device for processing a substrate. The device for processing a substrate comprises a housing having an open upper surface and a processing space inside, a window unit for sealing the open upper surface of the housing, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying gas to the processing space, and a plasma source for exciting the gas supplied to the processing space into plasma, wherein the plasma source is provided as an antenna including a coil to which power is applied, and the coil may be located inside the window unit.

[0010] According to one embodiment, the coil may be formed in a spiral shape.

[0011] According to one embodiment, the device may further include a heating source that transmits a heat source toward the window unit from above the window unit.

[0012] According to one embodiment, the gas supply unit includes a first gas supply unit that supplies a first gas to the processing space and a second gas supply unit that supplies a second gas to the processing space, and the device further includes a controller that controls the plasma source, the first gas supply unit, the second gas supply unit, and the heating source, wherein the controller can control the second gas supply unit and the heating source so that the heating source provides the heat source to the substrate through the window unit while the second gas is supplied to the processing space.

[0013] According to one embodiment, the controller can control the first gas supply unit and the second gas supply unit so that the first gas is supplied to the processing space ahead of the second gas.

[0014] According to one embodiment, the device further includes an exhaust unit for exhausting the atmosphere of the processing space, and the controller can control the exhaust unit to exhaust the atmosphere of the processing space after the first gas is supplied to the processing space, and to exhaust the atmosphere of the processing space after the second gas is supplied to the processing space.

[0015] According to one embodiment, the heat source may include microwaves.

[0016] In addition, the present invention provides a method for processing a substrate. The method for processing a substrate includes an adsorption step in which a first gas is supplied to a processing space and the supplied first gas is adsorbed onto the surface of a first film formed on the substrate, and a reaction step in which a second gas is supplied to the processing space. In the reaction step, a first mechanism may be performed in which the second gas supplied to the processing space reacts with the first gas adsorbed onto the surface of the first film to form a protective film on the surface of the first film, and a second mechanism may be performed in which power is applied to a coil located inside a window unit to excite the second gas supplied to the processing space and etch the second film formed on the substrate.

[0017] According to one embodiment, in the adsorption step, the upper temperature of the substrate is set to a first temperature, and in the reaction step, the upper temperature of the substrate is set to a second temperature, wherein the second temperature may be higher than the first temperature.

[0018] According to one embodiment, the surface temperature of the substrate is controlled by a heating source that transmits a heat source to the substrate through the window unit, and the heating source may be turned off during the adsorption step and turned on during the reaction step.

[0019] According to one embodiment, the method may further include a first purging step between the adsorption step and the reaction step, in which a purge gas is supplied to the processing space to exhaust the atmosphere of the processing space, and a second purging step after the reaction step, in which a purge gas is supplied to the processing space to exhaust the atmosphere of the processing space.

[0020] According to one embodiment, the adsorption step, the first purging step, the reaction step, and the second purging step may be repeated sequentially a plurality of times.

[0021] According to one embodiment, the heat source may include microwaves.

[0022] According to one embodiment, the first film may be formed above the second film with respect to the upper surface of the substrate. Effects of the invention

[0023] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0024] In addition, according to one embodiment of the present invention, the process cycle can be shortened by changing the temperature of the substrate to a temperature suitable for the process.

[0025] In addition, according to one embodiment of the present invention, a protective film is formed on the surface of the photoresist film to minimize damage to the photoresist film caused by plasma.

[0026] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0027] Figure 1 is a perspective view schematically showing a typical substrate after the photolithography process is completed. FIG. 2 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is a schematic diagram showing a frontal view of a substrate being processed in a process chamber according to one embodiment of FIG. 2. FIG. 4 is a schematic diagram showing a process chamber according to one embodiment of FIG. 2. FIG. 5 is a schematic diagram showing a plasma source according to one embodiment of FIG. 4 viewed from above. FIG. 6 is a flowchart of a substrate processing method according to one embodiment of the present invention. FIG. 7 is a flowchart schematically showing one cycle of a substrate processing method according to one embodiment of FIG. 6. FIG. 8 is a schematic diagram showing the appearance of a process chamber in which an adsorption step according to one embodiment of FIG. 6 is performed. FIG. 9 is a schematic diagram showing the appearance of a process chamber in which a first purge step is performed according to one embodiment of FIG. 6. FIG. 10 is a schematic diagram showing the appearance of a process chamber in which a reaction step according to one embodiment of FIG. 6 is performed. FIG. 11 is a schematic diagram showing the appearance of a process chamber in which a second purging step is performed according to one embodiment of FIG. 6. Specific details for implementing the invention

[0028] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. These embodiments are provided to more completely explain the present invention to those with average knowledge in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize clearer explanations.

[0029] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms may be used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component.

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 2 and FIGS.

[0031] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, a substrate processing apparatus (1) according to an embodiment of the present invention may include a load port (10), a controller (15), an atmospheric pressure transfer module (20), a vacuum transfer module (30), a load lock chamber (40), and a process chamber (50).

[0032] A load port (10) may be placed on one side of an atmospheric pressure transfer module (20) described later. At least one load port (10) may be provided. The number of load ports (10) may increase or decrease depending on process efficiency and footprint conditions, etc. A container (F) according to one embodiment of the present invention may be placed in a load port (10).

[0033] The container (F) can be loaded into or unloaded from the load port (10) by a transport means (not shown), such as an overhead transfer apparatus (OHT), an overhead conveyor, or an automatic guided vehicle, or by an operator. The container (F) may include various types of containers depending on the type of goods to be stored. The container (F) may be a sealed container, such as a front-opening unified pod (FOUP).

[0034] The controller (15) can control the substrate processing device (1). The controller (15) can control the substrate processing device (1) so as to perform the substrate processing method described below. The controller (15) may be equipped with a process controller consisting of a microprocessor (computer) that executes control of the substrate processing device (1), a user interface consisting of a keyboard for which an operator performs command input operations to manage the substrate processing device (1), a display for visualizing and displaying the operating status of the substrate processing device (1), a control program for executing processing in the substrate processing device (1) under the control of the process controller, and a memory unit in which a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe, is stored. Additionally, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium within the memory unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0035] The atmospheric pressure transfer module (20) and the vacuum transfer module (30) can be arranged along the first direction (2). Hereinafter, when viewed from above, the direction perpendicular to the first direction (2) is defined as the second direction (4). Additionally, the direction perpendicular to a plane that includes both the first direction (2) and the second direction (4) is defined as the third direction (6). For example, the third direction (6) may mean a direction perpendicular to the ground.

[0036] The atmospheric pressure transfer module (20) can transfer a substrate (W) between the container (F) and the load lock chamber (40) described later. For example, the atmospheric pressure transfer module (20) can withdraw the substrate (W) from the container (F) and transfer it to the load lock chamber (40), or withdraw the substrate (W) from the load lock chamber (40) and transfer it into the interior of the container (F).

[0037] The atmospheric pressure transfer module (20) may include a transfer frame (220) and a first transfer robot (240). The transfer frame (220) may be positioned between a load port (10) and a load lock chamber (40). A load port (10) may be connected to the transfer frame (220). The interior of the transfer frame (220) may be provided at atmospheric pressure. For example, the interior of the transfer frame (220) may be maintained in an atmospheric pressure atmosphere.

[0038] A return rail (230) is disposed on the return frame (220). The return rail (230) may be provided with its length direction parallel to the length direction of the return frame (220). For example, the return rail (230) may have its length direction formed along the second direction (4). A first return robot (240) may be positioned on the return rail (230).

[0039] A first conveying robot (240) is provided in the conveying frame (220). The first conveying robot (240) conveys a substrate (W). The first conveying robot (240) can convey the substrate (W) between a container (F) placed in the load port (10) and the load lock chamber (40) described later. The first conveying robot (240) can move forward and backward in the second direction (4) along the conveying rail (230). The first conveying robot (240) can move in a vertical direction (e.g., the third direction (6)). The first conveying robot (240) has a first conveying hand (242) that moves forward, backward, or rotates on a horizontal plane. The first conveying hand (242) may be provided as one or multiple hands. A substrate (W) is placed on the first conveying hand (242).

[0040] The vacuum transfer module (30) may be positioned between the load lock chamber (40) and the process chamber (50) described later. The vacuum transfer module (30) may include a transfer chamber (320) and a second transfer robot (340).

[0041] The interior of the transfer chamber (320) can be maintained in a vacuum pressure atmosphere. A second transfer robot (340) is placed in the transfer chamber (320). For example, the second transfer robot (340) may be placed in the central part of the transfer chamber (320). The second transfer robot (340) transfers a substrate (W) between the load lock chamber (40) and the process chamber (50), which will be described later. Additionally, the second transfer robot (340) transfers a substrate (W) between the process chambers (50). The second transfer robot (340) can move in a vertical direction. The second transfer robot (340) has a second transfer hand (342) that moves forward, backward, or rotates on a horizontal plane. At least one second transfer hand (342) may be provided. A substrate (W) is placed on the second transfer hand (342).

[0042] At least one process chamber (50), described later, is connected to the transfer chamber (320). The transfer chamber (320) may be provided in a polygonal shape. A load lock chamber (40) and a process chamber (50), described later, may be arranged around the transfer chamber (320). For example, as shown in FIG. 1, a hexagonal transfer chamber (320) may be arranged in the center of the vacuum transfer module (30), and a load lock chamber (40) and a process chamber (50) may be arranged around it. Unlike the above description, the shape of the transfer chamber (320) and the number of process chambers (50) may be varied according to the user's needs or process requirements.

[0043] The load lock chamber (40) may be positioned between the return frame (220) and the transfer chamber (320). The load lock chamber (40) provides a buffer space between the return frame (220) and the transfer chamber (320) where the substrate (W) is exchanged. For example, a substrate (W) that has completed a predetermined process in the process chamber (50) may temporarily stay in the load lock chamber (40). Additionally, a substrate (W) that has been withdrawn from the container (F) and is scheduled for a predetermined process may temporarily stay in the load lock chamber (40).

[0044] As described above, the internal atmosphere of the return frame (220) can be maintained at an atmospheric pressure atmosphere, and the internal atmosphere of the transfer chamber (320) can be maintained at a vacuum pressure atmosphere. A load lock chamber (40) is positioned between the return frame (220) and the transfer chamber (320) so that its internal atmosphere can be switched between an atmospheric pressure atmosphere and a vacuum pressure atmosphere.

[0045] At least one process chamber (50) is connected to the transfer chamber (320). Multiple process chambers (50) may be provided. A process chamber (50) may be a chamber that performs a predetermined process on a substrate (W). According to one embodiment of the present invention, the process chamber (50) may process the substrate (W) using plasma. For example, the process chamber (50) may be a chamber that performs an etching process to remove a thin film on the substrate (W) using plasma, a deposition process to form a thin film on the substrate (W), or a dry cleaning process. Additionally, the process chamber (50) may be a chamber that performs an atomic layer deposition process to deposit an atomic layer on the substrate (W) using plasma by alternately supplying different types of gases. However, it is not limited thereto, and the plasma treatment process performed in the process chamber (50) may be varied in many ways using known plasma treatment processes.

[0046] FIG. 3 is a schematic diagram showing a frontal view of a substrate being processed in a process chamber according to one embodiment of FIG. 2. Referring to FIG. 3, the substrate (W) being processed in the process chamber (50) according to one embodiment may be a substrate (W) that has undergone a predetermined processing. For example, the substrate (W) introduced into the process chamber (50) may be a substrate (W) that has undergone a development process. As shown in FIG. 3, a plurality of thin films may be formed on the substrate (W) introduced into the process chamber (50). The substrate (W) may include a first film (L1) and a second film (L2). For example, the first film (L1) may be a photoresist film. Additionally, the second film (L2) may be a film that is etched by plasma. The first film (L1) may be formed above the upper surface of the substrate (W) compared to the second film (L2).

[0047] FIG. 4 is a schematic diagram showing a process chamber according to one embodiment of FIG. 2. Referring to FIG. 4, the process chamber (50) can process a substrate (W) using plasma. For example, the process chamber (50) can simultaneously perform an atomic layer deposition process in which an atomic layer is deposited on a substrate (W) using plasma, and an etching process in which a specific film formed on the substrate (W) is removed using plasma.

[0048] The process chamber (50) may include a housing (500), a support unit (600), a gas supply unit (700), a window unit (800), a plasma source (900), and a heating source (1000).

[0049] The housing (500) has a processing space (501) inside which processing of a substrate (W) is performed. The housing (500) may have a shape with an open top surface. For example, the housing (500) may have a cylindrical shape with an open top surface. The housing (500) may seal the processing space (501) in combination with a window unit (800) described later. The processing space (501) may be maintained in a generally vacuum atmosphere while processing the substrate (W). The material of the housing (500) may include aluminum. The housing (500) may be grounded.

[0050] According to one embodiment, a liner (not shown) may be located inside the housing (500). The liner (not shown) may have a cylindrical shape with an open top and bottom surface. The liner (not shown) may be positioned to be in contact with the inner wall of the housing (500). The liner (not shown) protects the inner wall of the housing (500) from plasma, thereby minimizing damage to the inner wall of the housing (500) from arc discharge. Additionally, the liner (not shown) may minimize the deposition of byproducts that may be generated during the process of processing the substrate (W) on the inner wall of the housing (500). Unlike the example described above, the liner (not shown) may not be located inside the housing (500).

[0051] An opening (not shown) is formed in the side wall of the housing (500). The opening (not shown) functions as a space for the substrate (W) to be brought into or taken out of the processing space (501). The opening (not shown) can be selectively opened or closed by an opening / closing assembly, such as a gate valve not shown.

[0052] An exhaust hole (510) is formed on the bottom surface of the housing (500). The exhaust hole (510) is connected to an exhaust unit (520). The exhaust unit (520) exhausts the atmosphere of the processing space (501). The exhaust unit (520) can regulate the internal pressure of the processing space (501) by exhausting the atmosphere of the processing space (501). Additionally, the exhaust unit (520) discharges process gases and impurities present in the processing space (501) to the outside of the processing space (501).

[0053] The exhaust unit (520) includes an exhaust line (522) and a pressure reducing member (524). One end of the exhaust line (522) is connected to an exhaust hole (510), and the other end of the exhaust line (522) is connected to the pressure reducing member (524). The pressure reducing member (not shown) may be provided as a known device that provides negative pressure.

[0054] An exhaust baffle (530) may be positioned above the exhaust hole (510) to function to perform more uniform exhaust for the processing space (501). The exhaust baffle (530) may be installed between the side wall of the housing (500) and the support unit (600) described later. When viewed from above, the exhaust baffle (530) may generally have a ring shape. At least one baffle hole (532) may be formed in the exhaust baffle (530). The baffle hole (532) may be a through hole penetrating the upper and lower surfaces of the exhaust baffle (530). Process gases and impurities present in the processing space (501) may move to the exhaust hole (510) and the exhaust line (522) through the baffle hole (532).

[0055] The support unit (600) is located inside the housing (500). The support unit (600) is located within the processing space (501). According to one embodiment, the support unit (600) may be located in the lower region of the entire processing space (501). The support unit (600) supports the substrate (W). The support unit (600) may include an electrostatic chuck (ESC) that adsorbs the substrate (W) using an electrostatic force. Alternatively, the support unit (600) may support the substrate (W) in various ways, such as a vacuum adsorption method or a mechanical clamping method. Below, the support unit (600) including the electrostatic chuck (ESC) is described as an example.

[0056] The support unit (600) may include an electrostatic chuck (610) and an insulating plate (650). The electrostatic chuck (610) supports a substrate (W). The electrostatic chuck (610) may include a dielectric plate (620), a base plate (630), and a ring member (640).

[0057] The dielectric plate (620) is located on the upper part of the support unit (600). A substrate (W) is placed on the upper surface of the dielectric plate (620). When the substrate (W) is placed on the upper surface of the dielectric plate (620), the edge region of the substrate (W) may be located outside the dielectric plate (620). In one example, the dielectric plate (620) may be formed in the shape of a disc. In one example, the upper surface of the dielectric plate (620) may have a diameter smaller than that of the substrate (W). In one example, the dielectric plate (620) may be a dielectric substance.

[0058] An electrode (622) may be located inside the dielectric plate (620). In one example, the electrode (622) may be embedded inside the dielectric plate (620). The electrode (622) is electrically connected to a first power source (624). The first power source (624) may include a DC power source. A first switch (626) is installed between the electrode (622) and the first power source (624). The electrode (622) may be electrically connected to or disconnected from the first power source (624) by turning the first switch (626) on or off. When the first switch (626) is turned on, a DC current flows through the electrode (622). Due to the current flowing through the electrode (622), an electrostatic force acts between the electrode (622) and the substrate (W). Accordingly, the substrate (W) is adsorbed to the dielectric plate (620).

[0059] The base plate (630) is located below the dielectric plate (620). The base plate (630) may be provided in the shape of a disc. The upper surface of the base plate (630) may be formed with a step such that its central region is located relatively higher than the edge region. The central region of the upper surface of the base plate (630) may have an area corresponding to the lower surface of the dielectric plate (620). The central region of the upper surface of the base plate (630) may be bonded to the lower surface of the dielectric plate (620). A ring member (640), which will be described later, may be located in the edge region of the upper surface of the base plate (630).

[0060] The base plate (630) may include a material with excellent heat transfer and electrical transfer properties. In one example, the base plate (630) may include a metal plate. In one example, the entire base plate (630) may include a metal material. For instance, the material of the base plate (630) may include aluminum.

[0061] The base plate (630) may be electrically connected to a second power source (630a). A second switch (630b) may be installed in the second power source (630a). The base plate (630) may be electrically connected to or disconnected from the second power source (630b) by turning the second switch (630b) on or off. The second power source (630a) may be a low-frequency power source that generates low-frequency power. The base plate (630) receives low-frequency power from the second power source (630a). The base plate (630) may receive low-frequency power from the second power source (630a) to improve the fluidity of the plasma formed in the processing space (501). According to one embodiment, the base plate (630) may receive low-frequency power to improve the linearity of the plasma present in the processing space (501). For example, when low-frequency power is applied to the base plate (630), the plasma present in the processing space (501) can move to the upper surface of the substrate (W) with straightness.

[0062] A cooling channel (632) may be formed inside the base plate (630). The cooling channel (632) functions as a passage through which a cooling fluid circulates. In one example, the cooling fluid may include cooling water. In one example, the cooling channel (632) may be formed in a spiral shape inside the base plate (630). Optionally, a plurality of cooling channels (632) may be provided. For example, a plurality of cooling channels (632) may be formed in a ring shape inside the base plate (630) that shares the center of the base plate (630) but has different radii. A plurality of cooling channels (632) may be fluidly connected to each other. Additionally, a plurality of cooling channels (632) may be located at the same height from each other.

[0063] The cooling channel (632) is connected to the cooling fluid storage unit (636) via the cooling fluid supply line (634). Cooling fluid is stored in the cooling fluid storage unit (363). A cooler (638) may be located inside the cooling fluid storage unit (636). The cooler (638) can cool the cooling fluid stored inside the cooling fluid storage unit (636) to a predetermined temperature. Alternatively, the cooler (638) may be installed in the cooling fluid supply line (634). The cooling fluid supplied to the cooling channel (632) via the cooling fluid supply line (634) circulates along the cooling channel (632) and can cool the base plate (630). The dielectric plate (620) and the substrate (W) can be cooled together by the cooled base plate (630). Accordingly, the substrate (W) can be maintained at a desired temperature.

[0064] Although not shown, a heat transfer channel (not shown) may be further formed inside the base plate (630). The heat transfer channel (not shown) may supply a heat transfer medium to the lower surface of the substrate (W). The heat transfer medium may be a fluid supplied to the lower surface of the substrate (W) to resolve temperature non-uniformity of the substrate (W) while processing the substrate (W) using plasma. In one example, the heat transfer medium may be helium (He) gas.

[0065] A ring member (640) is positioned in the edge region of the electrostatic chuck (610). In one example, the ring member (640) may be a focus ring. The ring member (640) has a ring shape. The ring member (640) is positioned along the perimeter of the dielectric plate (620). The upper surface of the ring member (640) may be formed with a step such that the outer portion is higher than the inner portion. The inner portion of the upper surface of the ring member (640) may be located at the same height as the upper surface of the dielectric plate (620). The inner portion of the upper surface of the ring member (640) may support the edge region of the substrate (W) located on the outer side of the dielectric plate (620). The outer portion of the upper surface of the ring member (640) may surround the edge region of the substrate (W).

[0066] An insulating plate (650) is located below the base plate (630). The insulating plate (650) may be made of an insulating material. The insulating plate (650) electrically insulates the base plate (630) and the housing (500) from each other. The insulating plate (650) may be formed in the shape of a circular plate when viewed from above. The upper and lower surfaces of the insulating plate (650) may be formed with an area corresponding to the lower surface of the base plate (630).

[0067] The gas supply unit (700) supplies gas to the processing space (501). The gas supplied to the processing space (501) may include a first gas, a second gas, and a purge gas. The gas supply unit (700) may include a first gas supply unit (720), a second gas supply unit (740), and a purge gas supply unit (760).

[0068] The first gas supply unit (720) can supply the first gas to the processing space (501). According to one embodiment, the first gas may be an adsorbent gas that is adsorbed onto a film formed on a substrate (W). For example, the first gas may be a gas that is adsorbed onto the first film among the first film and the second film formed on the substrate (W). According to one embodiment, the first gas may be a gas containing Si. The first gas supply unit (720) may include a first gas supply source (722), a first gas supply line (724), and a first valve (726).

[0069] The first gas supply source (722) stores the first gas. The first gas stored in the first gas supply source (722) can be supplied to the processing space (501) through the first gas supply line (724). The first valve (726) is installed in the first gas supply line (724). The first valve (726) may be an on / off valve. Additionally, the first valve (726) may be a flow control valve that controls the flow rate of the fluid flowing through the first gas supply line (724).

[0070] The second gas supply unit (740) can supply the second gas to the processing space (501). According to one embodiment, the second gas may be a reaction gas for etching a film formed on a substrate (W). For example, the second gas may be a gas for etching the second film among the first film and the second film formed on the substrate (W). Additionally, the second gas may be a gas that reacts with the first gas adsorbed on the first film to form a protective film. According to one embodiment, the second gas may be a gas containing O2.

[0071] The second gas supply unit (740) may include a second gas supply source (742), a second gas supply line (744), and a second valve (746). The second gas supply source (742) stores the second gas. The second gas stored in the second gas supply source (742) can be supplied to the processing space (501) through the second gas supply line (744). The second valve (746) is installed in the second gas supply line (744). Since the configuration of the second valve (746) is provided identically or similarly to the first valve (726) described above, the description of overlapping content is omitted.

[0072] The purge gas supply unit (760) can supply purge gas to the processing space (501). The purge gas may be a gas for purging the processing space (501). According to one embodiment, the purge gas may be an inert gas containing N2 or Ar.

[0073] The purge gas supply unit (760) may include a purge gas source (762), a purge gas supply line (764), and a purge valve (766). The purge gas source (762) stores purge gas. The purge gas stored in the purge gas source (762) can be supplied to the processing space (501) through the purge gas supply line (764). Since the configuration of the purge valve (766) is provided identically or similarly to the first valve (726) described above, a description of the redundant content is omitted.

[0074] The window unit (800) is located on the upper part of the housing (500). When viewed from above, the window unit (800) may generally have a circular shape. The window unit (800) may seal the open upper surface of the housing (500). A coil (980), described later, may be located inside the window unit (800). The window unit (800) may be formed of a material capable of transmitting heat from a heating source (1000), described later. Additionally, the window unit (800) may be formed of a material having corrosion resistance. According to one embodiment, the material of the window unit (800) may include quartz.

[0075] FIG. 5 is a schematic diagram showing a top view of a plasma source according to an embodiment of FIG. 4. Referring to FIG. 4 and FIG. 5, the plasma source (900) excites the gas supplied to the processing space (501) into a plasma state. Inductively Coupled Plasma (ICP) may be used as the plasma source (900) according to an embodiment of the present invention. However, it is not limited thereto, and Capacitively Coupled Plasma (CCP) may be used as the plasma source (900). Below, the case in which Inductively Coupled Plasma (ICP) is used as the plasma source (900) will be described as an example.

[0076] A plasma source (900) may include a high-frequency power supply (920), a high-frequency line (940), a high-frequency switch (960), and an antenna. The high-frequency power supply (920) applies high-frequency power to the antenna. In one example, the high-frequency power supply (920) may be an RF power supply. The high-frequency line (940) is connected to the high-frequency power supply (920). Additionally, the high-frequency line (940) is connected to the antenna. For example, the high-frequency line (940) is connected to a coil (980). The end of the high-frequency line (940) may be grounded. A high-frequency switch (960) is installed on the high-frequency line (940). High-frequency power may be applied to or blocked from the antenna by turning the high-frequency switch (960) on or off. Additionally, an impedance matcher (not shown) may be installed on the high-frequency line (940).

[0077] The antenna may include a coil (980) wound with multiple circuits. According to one embodiment, the coil (980) may have a ring shape. According to one embodiment, the coil (980) may be formed in a spiral shape. The coil (980) may be located inside the window unit (800). According to one embodiment, the coil (980) may be embedded inside the window unit (800). The coil (980) may be positioned facing the substrate (W). When viewed from above, the coil (980) may be positioned overlapping the substrate (W) supported by the support unit (600).

[0078] The coil (980) can receive high-frequency power from the high-frequency power source (920) and induce a time-varying electromagnetic field in the processing space (501). Accordingly, the gas supplied to the processing space (501) can be excited into plasma. For example, among the first gas and the second gas supplied to the processing space (501), the second gas can be excited into plasma.

[0079] The coil (980) may have a thin thickness through which a heat source transmitted from the heating source (1000), described later, can pass. The thin thickness through which heat is transmitted exemplified in this description refers to a thickness in which the coil (980) does not significantly affect the permeability of the heat source when the heat source passes through the window unit (800). It is not limited to this, and the heat source transmitted from the heating source (1000) may be transmitted from the window unit (800) to the processing space (501) through an area inside the window unit (800) where the coil (980) is not formed.

[0080] Referring to FIG. 4, a heating source (1000) transmits a heat source to a substrate (W). The heating source (1000) can heat the substrate (W) by transmitting a heat source to the substrate (W) supported by the support unit (600). According to one embodiment, the heating source (1000) transmits a heat source toward the window unit (800), and the window unit (800) can radiate the received heat source into the processing space (501). The heat source radiated into the processing space (501) can be transmitted to the substrate (W) located in the processing space (501). The heating source (1000) may be located above the window unit (800). According to one embodiment, the heat source transmitted by the heating source (1000) to the substrate (W) may be a microwave. It is not limited thereto, and the heat source (1000) may be a flash lamp, an infrared lamp, or a laser optical system. If the heat source (1000) is a flash lamp or an infrared lamp, the heat source transferred to the substrate (W) may be a flash. Additionally, if the heat source (1000) is a laser optical system, the heat source transferred to the substrate (W) may be a laser. Below, the case where the heat source transferred by the heating source (1000) to the substrate (W) is a microwave will be described as an example.

[0081] The heating source (1000) may include a microwave generator (1100), a waveguide (1200), and a matching network (1300). The microwave generator (1100) generates microwaves. The waveguide (1200) is connected to the microwave generator (1100). A passage is formed inside the waveguide (1200). The internal passage of the waveguide (1200) may be coated with a plating film having a metallic material. Microwaves generated from the microwave generator (1100) are transmitted to a window unit (800) along the waveguide (1200). The matching network (1300) may be installed in the waveguide (1200). The matching network (1300) matches the microwaves transmitted to the window unit (800) through the waveguide (1200) to a predetermined frequency. For example, the microwave transmitted to the window unit (800) via the matching network (1300) may have a frequency in the range of 1 to 5 GHz. The microwave transmitted to the window unit (800) passes through the window unit (800) and is transmitted to the substrate (W) located in the processing space (501).

[0082] According to one embodiment of the present invention described above, since the surface of the substrate (W) is locally heated by microwaves, the heating rate of the film formed on the upper surface of the substrate (W) can be improved. In addition, when microwaves are not transmitted to the substrate (W), the cooling rate of the film formed on the upper surface of the substrate (W) can be further improved. That is, according to one embodiment of the present invention, the surface temperature of the substrate (W) can be heated to a target temperature or cooled to a target temperature within a short period of time.

[0083] In addition, a window unit (800) according to one embodiment of the present invention is located between a heating source (1000) and a processing space (501). Furthermore, the window unit (800) may be formed of a material capable of transmitting heat sources transmitted from the heating source (1000), which will be described later. Accordingly, microwaves transmitted from the heating source (1000) can be radiated from the window unit (800) and transmitted uniformly to the processing space (501). Accordingly, the uniformity of microwaves transmitted to the surface of the substrate (W) can be improved. In addition, since a coil (980) is located inside the window unit (800), space for installing a separate coil (980) is saved. Accordingly, the structural complexity of the process chamber (50) can be resolved.

[0084] Hereinafter, a substrate processing method according to an embodiment of the present invention will be described in detail with reference to FIGS. 6 to 11. The substrate processing method according to an embodiment can be performed in the substrate processing apparatus (1) described above. For example, a controller (15) can perform the substrate processing method according to an embodiment of the present invention by controlling the configurations of the process chamber (50).

[0085] Referring to FIGS. 6 and 7, a substrate processing method according to one embodiment of the present invention may include an adsorption step (S100), a first purging step (S200), a reaction step (S300), and a second purging step (S400). The adsorption step (S100), the first purging step (S200), the reaction step (S300), and the second purging step (S400) may be performed sequentially. Additionally, the adsorption step (S100), the first purging step (S200), the reaction step (S300), and the second purging step (S400) may form one cycle. For example, after the second purging step (S400) is completed, the process may be performed again starting from the adsorption step (S100). That is, the adsorption step (S100), the first purging step (S200), the reaction step (S300), and the second purging step (S400) can be repeated sequentially multiple times.

[0086] In the reaction step (S300), the first mechanism (M1) and the second mechanism (M2) may be performed. The first mechanism (M1) and the second mechanism (M2) may be performed simultaneously. The first mechanism (M1) and the second purging step (S400) performed in the adsorption step (S100), the first purging step (S200), and the reaction step (S300) may be defined as an atomic layer deposition process (S10, ALD) that forms a protective film on the surface of the first film (L1) formed on the substrate (W) shown in FIG. 3. Additionally, the second mechanism (M2) performed in the reaction step (S300) may be defined as an etching process (S20) that etches the second film (L2) formed on the substrate (W) shown in FIG. 3 using plasma.

[0087] Referring to FIG. 7, in the adsorption step (S100) according to one embodiment, the first gas (G1) among the first gas (G1), the second gas (G2), and the purge gas (PG) can be supplied to the processing space. Also, in the adsorption step (S100), plasma (P) is not generated in the processing space. Additionally, in the adsorption step (S100), the upper temperature of the substrate (W) is maintained at a first temperature (T1).

[0088] Referring to FIG. 8, in the adsorption step (S100), the first gas (G1) is supplied to the processing space (501), so the first valve (726) is opened and the purge valve (766) and the second valve (746) are closed. Also, in the adsorption step (S100), since no plasma is generated in the processing space (501), the second switch (630b) and the high-frequency switch (960) are turned off.

[0089] Additionally, in the adsorption step (S100), the heating source (1000) does not transfer a heat source toward the window unit (800). In contrast, in the adsorption step (S100), a cooling fluid can continuously circulate in the cooling channel (632). Accordingly, in the adsorption step (S100), the upper temperature of the substrate (W) can be lowered relatively compared to the reaction step (S300) described later. For example, the upper temperature of the substrate (W) in the adsorption step (S100) is maintained at a first temperature (T1), and the upper temperature of the substrate (W) in the reaction step (S300) described later can be maintained at a second temperature (T2) which is higher than the first temperature (T1). According to one embodiment, the first temperature (T1) may be a temperature higher than room temperature and lower than 300 degrees Celsius. Also, the second temperature (T2) may be a temperature higher than 300 degrees Celsius.

[0090] As illustrated in FIG. 8, in the adsorption step (S100), a first gas (G1) is supplied to a processing space (501). The first gas (G1) supplied to the processing space (501) can be adsorbed onto the first film (L1) among the first film (L1) and the second film (L2) formed on the substrate (W) (see enlarged view of part A1). According to one embodiment, the first film (L1) may be a photoresist film. The first gas (G1) adsorbed on the surface of the first film (L1) modifies the surface of the first film (L1). The first temperature (T1) described above may be a temperature at which the adsorption of the first gas (G1) on the surface of the first film (L1) is maximized. Accordingly, in the adsorption step (S100), by adjusting the upper temperature of the substrate (W) to a first temperature (T1), the time required for the reaction in which the first gas (G1) is adsorbed on the surface of the first film (L1) can be shortened. For example, the adsorption step (S100) in which the adsorption reaction is performed can be performed within approximately 1 second.

[0091] Referring again to FIG. 7, in the first exhaust step (S200) according to one embodiment, the purge gas (PG) among the first gas (G1), the second gas (G2), and the purge gas (PG) is supplied to the processing space. Also, in the first exhaust step (S200), plasma (P) is not generated in the processing space. Also, in the first exhaust step (S200), the upper temperature of the substrate (W) is maintained at the first temperature (T1).

[0092] Referring to FIG. 9, in the first exhaust step (S200), purge gas (PG) is supplied to the processing space (501), so the purge valve (766) is opened and the first valve (726) and the second valve (746) are closed. Also, in the first exhaust step (S200), since no plasma is generated in the processing space (501), the second switch (630b) and the high-frequency switch (960) are turned off. Also, as in the adsorption step (S100), in the first exhaust step (S200), the heating source (1000) does not transfer heat to the window unit (800). Accordingly, in the first exhaust step (S200), the upper temperature of the substrate (W) is maintained at the first temperature (T1).

[0093] As illustrated in FIG. 9, in the first exhaust step (S200), purge gas (PG) is supplied to the processing space (501). In the first exhaust step (S200), the pressure reducing member (524) reduces the pressure of the processing space (501) to exhaust the atmosphere of the processing space (501). Accordingly, the purge gas (PG) supplied to the processing space (501) in the first exhaust step (S200) flows inside the processing space (501) and is exhausted through the exhaust hole (510) along with the first gas (G1) remaining in the processing space (501) and impurities (Byproduct) resulting from the adsorption reaction (see enlarged view of part A2).

[0094] According to one embodiment, the first exhaust step (S200) may be performed within approximately 2 seconds, but is not limited thereto. For example, it is sufficient to perform the first exhaust step (S200) until the first gas (G1) and impurities remaining in the processing space (501) are properly exhausted.

[0095] Referring to FIG. 7, in a reaction step (S300) according to one embodiment, the second gas (G2) among the first gas (G1), the second gas (G2), and the purge gas (PG) can be supplied to the processing space. Additionally, in the reaction step (S300), plasma (P) can be generated in the processing space. For example, in the reaction step (S300), the second gas (G2) supplied to the processing space can be excited to generate plasma (P) in the processing space. Additionally, in the reaction step (S300), the upper temperature of the substrate (W) can be maintained at a second temperature (T2) that is higher than the first temperature (T1) described above.

[0096] In the reaction step (S300), the first mechanism (M1) and the second mechanism (M2) described with reference to FIG. 6 are performed. The first mechanism (M1) and the second mechanism (M2) can be performed simultaneously during the reaction step (S300) without distinction of order.

[0097] Referring to FIG. 10, in the reaction step (S300), the second gas (G2) is supplied to the processing space (501), so the second valve (746) is opened and the purge valve (766) and the first valve (726) are closed. Also, in the reaction step (S300), the second gas (G2) supplied to the processing space (501) is excited, so the high-frequency switch (960) is turned ON to apply high-frequency power to the coil (980). Also, in the reaction step (S300), the second switch (630b) is turned ON to apply low-frequency power to the base plate (630). This can improve the fluidity of the plasma (P) generated in the processing space (501) toward the substrate (W).

[0098] Additionally, in the reaction step (S300), the heating source (1000) transmits a heat source (e.g., microwave) toward the window unit (800). According to one embodiment, microwaves generated from a microwave generator (1100) pass sequentially through a waveguide (1200) and the window unit (800) to be transmitted to the processing space (501). During the process of the microwaves passing through the window unit (800), they may be radiated from within the window unit (800). Accordingly, the microwaves can be uniformly transmitted to the processing space (501) by the window unit (800). That is, in the reaction step (S300), a heat source is transmitted to the processing space (501) and the upper part of the substrate (W) via the window unit (800).

[0099] In the reaction step (S300), some of the second gas (G2) supplied to the processing space (501) is delivered to the substrate (W). For example, some of the second gas (G2) supplied to the processing space (501) may be delivered to the substrate (W) without being excited into plasma by the electric field generated in the processing space (501). The second gas (G2) delivered to the substrate (W) may react with the first gas (G1) adsorbed on the first film (L1) for deposition. The first gas (G1) and the second gas (G2) may react with each other to form a protective film (PL) on the surface of the first film (L1) (see enlarged view of part A3). That is, the first mechanism (M1) may be performed in the reaction step (S300). According to one embodiment, the protective film (PL) may be etched relatively less by the plasma than the first film (L1). A protective film (PL) is formed on the surface of the first film (L1) to protect the first film (L1) from plasma. That is, the etching of the first film (L1) by the plasma (P) generated in the processing space (501) to etch the second film (L2) can be minimized. Accordingly, the second film (L2), which is the film to be etched, can be efficiently removed using plasma (P), thereby improving the uniformity of the substrate processing.

[0100] Additionally, the microwave transmitted to the processing space (501) in the reaction step (S300) is transmitted to the upper surface of the substrate (W) supported by the support unit (600). The transmitted microwave can maintain the upper temperature of the substrate (W) at a second temperature (T2). The second temperature (T2) may be a temperature at which the deposition reaction of the first gas (G1) and the second gas (G2) is maximized.

[0101] Accordingly, in the first mechanism (M1) performed in the reaction step (S300), the heating source (1000) targets the upper temperature of the substrate (W) and adjusts it to a second temperature (T2), thereby maximizing the deposition reaction between the first gas (G1) and the second gas (G2) on the surface of the first film (L1). Accordingly, the time required to form a protective film (PL) on the surface of the first film (L1) can be shortened. For example, the reaction step (S300) in which the first mechanism (M1) is performed can be performed within approximately 2 seconds.

[0102] In the reaction step (S300), in addition to the first mechanism (M1) described above, a second mechanism (M2) may be performed. For example, in the reaction step (S300), another portion of the second gas (G2) supplied to the processing space (501) is excited in the processing space (501) by a plasma source (900). Accordingly, plasma (P) is generated in the processing space (501). The plasma (P) generated in the processing space (501) can etch the second film (L2) formed on the substrate (W) (see enlarged view of part A3). That is, the second mechanism (M2) may be performed in the reaction step (S300).

[0103] Additionally, in the second mechanism (M2) performed in the reaction step (S300), the temperature of the processing space (501) can be raised by the heating source (1000). The microwaves delivered to the processing space (501) can enhance the reactivity between the second gas (G2) supplied to the processing space (501) and the electric field generated in the processing space (501) by the plasma source (900). Accordingly, the second gas (G2) can be efficiently excited in the processing space (501).

[0104] Referring again to FIG. 7, in the second exhaust step (S400) according to one embodiment, the purge gas (PG) among the first gas (G1), the second gas (G2), and the purge gas (PG) is supplied to the processing space. Also, in the second exhaust step (S400), plasma (P) is not generated in the processing space. Also, in the second exhaust step (S400), the upper temperature of the substrate (W) is maintained at the first temperature (T1).

[0105] Referring to FIG. 11, in the second exhaust step (S400), purge gas (PG) is supplied to the processing space (501), so the purge valve (766) is opened and the first valve (726) and the second valve (746) are closed. Also, in the second exhaust step (S400), since no plasma is generated in the processing space (501), the second switch (630b) and the high-frequency switch (960) are turned off. Also, as in the adsorption step (S100), in the second exhaust step (S400), the heating source (1000) does not transfer heat to the window unit (800). Accordingly, in the second exhaust step (S400), the upper temperature of the substrate (W) is maintained at the first temperature (T1).

[0106] As illustrated in FIG. 11, in the second exhaust step (S400), purge gas (PG) is supplied to the processing space (501). In the second exhaust step (S400), the pressure reduction member (524) reduces the pressure of the processing space (501) to exhaust the atmosphere of the processing space (501). Accordingly, the purge gas (PG) supplied to the processing space (501) in the second exhaust step (S400) flows inside the processing space (501) and is exhausted through the exhaust hole (510) along with the second gas (G2) remaining in the processing space (501) and impurities (Byproduct) from the deposition reaction (see enlarged view of A4).

[0107] According to one embodiment, the second exhaust step (S400) may be performed within approximately 2 seconds, but is not limited thereto. For example, it is sufficient for the second exhaust step (S400) to be performed until the second gas (G2) and impurities remaining in the processing space (501) are properly exhausted.

[0108] According to the above-described embodiments of the present invention, the upper temperature of the substrate (W) in the adsorption step (S100) and the reaction step (S300) can be controlled differently. Accordingly, in the adsorption step (S100), the first gas (G1) can be more efficiently adsorbed onto the first film (L1) formed on the substrate (W). Additionally, in the reaction step (S300), the second gas (G2) can react more efficiently with the first gas (G1) adsorbed on the substrate (W) to form a protective film (PL) in a short period of time. Furthermore, in the reaction step (S300), the temperature of the processing space (501) can be increased to improve the reactivity between the second gas (G2) and the electric field in the processing space (501). Accordingly, the time required for one cycle (1 cycle) of the adsorption step (S100), the first exhaust step (S200), the reaction step (S300), and the second exhaust step (S400) can be significantly shortened. In addition, by performing the first mechanism (M1) and the second mechanism (M2) simultaneously in the reaction step (S300), the first film (L1) can be efficiently protected from plasma, and at the same time, the etching efficiency of the second film (L2) by plasma (P) can be improved.

[0109] In the example described above, it was explained that purge gas (PG) is not supplied to the processing space (501) and the internal atmosphere of the processing space (501) is not exhausted during the adsorption step (S100) and the reaction step (S300), but this is not limited thereto. For instance, even during the adsorption step (S100) and the reaction step (S300), purge gas (PG) may be supplied to the processing space (501) and the internal atmosphere of the processing space (501) may be exhausted so that the pressure of the processing space (501) is maintained above a certain pressure. However, the amount of exhaust in the adsorption step (S100) and the reaction step (S300) may be relatively smaller than the amount of exhaust in the first exhaust step (S200) and the second exhaust step (S400).

[0110] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the disclosed content, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required for specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Additionally, the appended claims should be interpreted as including other embodiments. Explanation of the symbols

[0111] 10: Load port 20: Atmospheric pressure transfer module 30: Vacuum transfer module 40: Loadlock Chamber 50: Process chamber 500 : Housing 600 : Support unit 700: Gas supply unit 720: 1st Gas Supply Unit 740: 2nd Gas Supply Unit 760: 3rd Gas Supply Unit 800 : Window Unit 900: Plasma Source 1000 : Heating source S100: Adsorption step S200: First exhaust stage S300: Reaction step S400: Second exhaust stage M1: First mechanism M2: Second mechanism L1: Act 1 L2: Act 2

Claims

Claim 1 An apparatus for processing a substrate comprises: a housing having an open upper surface and a processing space inside; a window unit that seals the open upper surface of the housing; a heating source that transmits a heat source toward the window unit from above the window unit; a support unit that supports a substrate in the processing space; a gas supply unit that supplies gas to the processing space; and a plasma source that excites the gas supplied to the processing space into plasma, wherein the plasma source is provided as an antenna including a coil to which power is applied, and the coil is located inside the window unit, and the gas supply unit comprises a first gas supply unit that supplies a first gas to the processing space. A substrate processing device comprising a second gas supply unit that supplies a second gas to a processing space, wherein the device further comprises a controller that controls the plasma source, the first gas supply unit, the second gas supply unit, and the heating source, wherein the controller controls the first gas supply unit and the second gas supply unit so that the first gas is supplied to the processing space ahead of the second gas, and controls the second gas supply unit and the heating source so that while the second gas is supplied to the processing space, the heating source provides the heat source to the substrate through the window unit, thereby controlling the second gas supplied to the processing space to react with the first gas adsorbed on the surface of the first film formed on the substrate to form a protective film on the surface of the first film, and simultaneously controls the second gas to be excited to etch the second film formed on the substrate. Claim 2 In claim 1, the coil is a substrate processing device formed in a spiral shape. Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 A substrate processing device according to paragraph 2, wherein the device further comprises an exhaust unit for exhausting the atmosphere of the processing space, and the controller controls the exhaust unit to exhaust the atmosphere of the processing space after the first gas is supplied to the processing space, and to exhaust the atmosphere of the processing space after the second gas is supplied to the processing space. Claim 7 In any one of claims 1, 2, and 6, the heat source is a substrate processing device including microwaves. Claim 8 A method for processing a substrate comprises: an adsorption step in which a first gas is supplied to a processing space and the supplied first gas is adsorbed onto the surface of a first film formed on the substrate; and a reaction step in which a second gas is supplied to the processing space, wherein in the reaction step, a first mechanism in which the second gas supplied to the processing space reacts with the first gas adsorbed on the surface of the first film to form a protective film on the surface of the first film, and a second mechanism in which power is applied to a coil located inside a window unit to excite the second gas supplied to the processing space into a plasma and etch a second film formed on the substrate are simultaneously performed, wherein the first film is a photoresist film and the second film is a film etched by the plasma. Claim 9 A substrate treatment method according to claim 8, wherein in the adsorption step, the upper temperature of the substrate is set to a first temperature, and in the reaction step, the upper temperature of the substrate is set to a second temperature, wherein the second temperature is higher than the first temperature. Claim 10 A substrate processing method according to claim 9, wherein the surface temperature of the substrate is controlled by a heating source that transmits a heat source to the substrate through the window unit, and the heating source is turned off during the adsorption step and turned on during the reaction step. Claim 11 A substrate processing method according to claim 8, further comprising: a first purging step between the adsorption step and the reaction step, in which a purge gas is supplied to the processing space to exhaust the atmosphere of the processing space; and a second purging step after the reaction step, in which a purge gas is supplied to the processing space to exhaust the atmosphere of the processing space. Claim 12 A substrate processing method according to claim 11, wherein the adsorption step, the first purging step, the reaction step, and the second purging step are sequentially repeated multiple times. Claim 13 In claim 10, the above heat source is a substrate processing method including microwaves. Claim 14 A substrate processing method according to any one of claims 8 to 13, wherein the first film is formed above the second film with respect to the upper surface of the substrate.

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