Apparatus for treating substrate and method for treating substrate

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method. It includes a chamber providing a processing space, a substrate support unit provided in the processing space to support a substrate and rotate the substrate, a liquid supply unit including a liquid discharge nozzle for discharging a liquid to the substrate supported by the substrate support unit, and a microwave application member emitting a microwave to apply a microwave to the substrate.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] To manufacture semiconductor devices or liquid crystal displays, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on a substrate. Among these, the etching or cleaning process is a process for removing unnecessary regions from thin films formed on a substrate; it requires high selectivity, a high etching rate, and etching uniformity, and as semiconductor devices become more highly integrated, increasingly higher levels of etch selectivity and uniformity are required.

[0003] Generally, the etching or cleaning process of a substrate is performed sequentially through a chemical treatment step, a rinsing treatment step, and a drying treatment step. In the chemical treatment step, a chemical is supplied to the substrate to etch a thin film formed on the substrate or to remove foreign substances from the substrate, and in the rinsing treatment step, a rinsing solution, such as pure water, is supplied to the substrate. Heating of the substrate may be involved in such fluid treatment of the substrate. (Patent Document 1) KR 10-2021-0083092 A The problem to be solved

[0004] One objective of the present invention is to provide a substrate processing apparatus capable of efficiently processing a substrate.

[0005] One objective of the present invention is to provide a substrate processing apparatus capable of improving etching performance.

[0006] One objective of the present invention is to provide a substrate processing apparatus capable of precisely controlling the temperature of a substrate by rapidly increasing the temperature of the substrate.

[0007] One objective of the present invention is to provide a substrate processing apparatus capable of selective heating according to the film quality of the substrate.

[0008] One objective of the present invention is to provide a substrate processing device capable of minimizing damage to a substrate caused by heating the substrate.

[0009] The objectives of the present invention are not limited thereto, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0010] The present invention provides an apparatus for processing a substrate. In one embodiment, the substrate processing apparatus comprises: a chamber providing a processing space; a substrate support unit provided in the processing space to support a substrate and rotate the substrate; a liquid supply unit including a liquid discharge nozzle for discharging a liquid to the substrate supported by the substrate support unit; and a microwave application member emitting a microwave to apply a microwave to the substrate.

[0011] In one embodiment, the substrate support unit comprises: a window member provided on the lower part of the substrate and made of a material through which a laser beam irradiated from the laser beam irradiation unit can pass; a chuck pin that supports the side of the substrate and separates the window member and the substrate by a predetermined distance; a spin housing that is coupled to the window member and penetrates in the vertical direction to provide a path through which the laser beam is transmitted; and a driving member that rotates the spin housing, and the microwave application member may be provided on the lower part of the window member.

[0012] In one embodiment, a back nozzle provided through the window member inside the spin housing may be further included.

[0013] In one embodiment, the bag nozzle may be provided as a dielectric.

[0014] In one embodiment, the microwave application member may emit a first microwave and a second microwave different from the first microwave.

[0015] In one embodiment, the first microwave and the second microwave may differ in at least one of the pulse width, intensity, and duty ratio.

[0016] In one embodiment, the microwave may be provided differently depending on the type of film material.

[0017] In one embodiment, the second microwave may cancel out the superposition phenomenon between the traveling wave of the first microwave reaching the substrate and the reflected wave.

[0018] In one embodiment, the microwave application member may be provided below the substrate.

[0019] In one embodiment, the chemical solution may be an aqueous phosphoric acid solution.

[0020] In one embodiment, a controller is further included, and the controller controls the substrate support unit and the liquid supply unit to form a liquid film of the liquid on the upper surface of the substrate while rotating the substrate, and can apply the microwave to the substrate through the microwave application member.

[0021] In addition, the present invention provides a method for processing a substrate. In one embodiment, a substrate on which a liquid film is formed by a chemical solution can be heated by applying microwaves.

[0022] In one embodiment, the substrate is supported by a substrate support unit that supports the substrate and is rotatable, and a microwave application member that applies the microwave may be provided below the substrate.

[0023] In one embodiment, the chemical solution may be an aqueous phosphoric acid solution.

[0024] In one embodiment, the microwave may be provided differently depending on the type of film material.

[0025] In one embodiment, the microwave may be a superposition of a first microwave and a second microwave different from the first microwave.

[0026] In one embodiment, the first microwave and the second microwave may differ in at least one of the pulse width, intensity, and duty ratio.

[0027] In one embodiment, the second microwave may cancel out the superposition phenomenon between the traveling wave of the first microwave reaching the substrate and the reflected wave.

[0028] In one embodiment, the microwave can be transmitted to the substrate by passing through a tube through which a fluid that processes the lower part of the substrate flows.

[0029] In one embodiment, the thickness of the film to be processed on the substrate is a first thickness, and when the first thickness is greater than a set thickness, a first microwave is applied, and when the first thickness is smaller than a set thickness, a second microwave is applied, and the first microwave may have a higher frequency than the second microwave.

[0030] A substrate processing apparatus according to an embodiment of another aspect of the present invention comprises: a chamber providing a processing space; a substrate support unit provided in the processing space to support a substrate and rotate the substrate; a liquid supply unit including a liquid discharge nozzle for discharging a liquid to the substrate supported by the substrate support unit; and a microwave application member emitting a microwave to apply a microwave to the substrate, wherein the substrate support unit comprises a window member made of a dielectric material provided at the bottom of the substrate and provided as a material through which a laser beam irradiated from the laser beam irradiation unit can pass; a chuck pin supporting the side of the substrate and separating the window member and the substrate by a predetermined distance; a spin housing coupled to the window member and penetrating in the vertical direction to provide a path for transmitting the laser beam; and a driving member for rotating the spin housing, wherein the microwave application member is provided at the bottom of the window member, and the microwave is provided differently depending on the type of film material. Effects of the invention

[0032] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0033] According to one embodiment of the present invention, etching performance can be improved.

[0034] According to one embodiment of the present invention, the temperature of the substrate is rapidly raised (600 °C / s or more), allowing for precise control of the substrate temperature.

[0035] According to one embodiment of the present invention, one objective is to provide a substrate processing apparatus capable of selective heating according to the film quality of the substrate.

[0036] According to one embodiment of the present invention, one objective is to provide a substrate processing apparatus capable of minimizing damage to a substrate caused by heating the substrate.

[0037] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0038] FIG. 1 is a plan view showing a substrate processing facility (1) according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a substrate processing device (300) according to a first embodiment provided in the process chamber (260) of FIG. 1. FIG. 3 and FIG. 4 are sequentially arranged to illustrate the operation method of the substrate processing device according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view showing a structure in which a transparent window of a microwave application member (400) according to the first embodiment of the present invention is applied. FIG. 6 is a diagram schematically showing a method of processing a substrate by applying a microwave application member (1400) according to the second embodiment of the present invention. FIG. 7 is a graph showing a combination example of a first microwave and a second microwave emitted from a microwave application member (1400) according to the second embodiment of the present invention. Specific details for implementing the invention

[0039] Embodiments of the present invention are described below with reference to the attached drawings so that those skilled in the art can easily implement them. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in describing preferred embodiments of the present invention in detail, specific descriptions of related known functions or configurations are omitted if it is determined that such detailed descriptions would unnecessarily obscure the essence of the present invention. Additionally, the same reference numerals are used throughout the drawings for parts having similar functions and operations.

[0040] The term 'comprising' a component means that, unless specifically stated otherwise, it does not exclude other components but rather allows for the inclusion of additional components. Specifically, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0041] Singular expressions include plural expressions unless the context clearly indicates otherwise. Additionally, the shapes and sizes of elements in drawings may be exaggerated for clearer explanation.

[0042] The term "and / or" includes any one of the listed items and all combinations of one or more thereof. Additionally, in this specification, the meaning of "connected" refers not only to cases where Member A and Member B are directly connected, but also to cases where Member A and Member B are indirectly connected by Member C being interposed between Member A and Member B.

[0043] Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the embodiments below. These embodiments are provided to more fully explain the present invention to those with average knowledge in the art. Accordingly, the shapes of the elements in the drawings have been exaggerated to emphasize clearer explanations.

[0044] FIG. 1 is a plan view showing a substrate processing facility (1) according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing facility (1) includes an index module (10) and a process processing module (20). The index module (10) includes a load port (120) and a transfer frame (140). The load port (120), the transfer frame (140), and the process processing module (20) are arranged sequentially in a line.

[0045] Hereinafter, the direction in which the load port (120), transfer frame (140), and process processing module (20) are arranged is called the first direction (12), the direction perpendicular to the first direction (12) when viewed from above is called the second direction (14), and the direction perpendicular to the plane including the first direction (12) and the second direction (14) is called the third direction (16).

[0046] A carrier (18) containing a substrate (W) is seated in a load port (120). Multiple load ports (120) are provided and arranged in a line along the second direction (14). The number of load ports (120) may increase or decrease depending on the process efficiency and footprint conditions of the process processing module (20). Multiple slots (not shown) are formed in the carrier (18) to accommodate substrates (W) arranged horizontally with respect to the ground. A front-opening unified pod (FOUP) may be used as the carrier (18).

[0047] The process processing module (20) includes a buffer unit (220), a transfer chamber (240), and a process chamber (260).

[0048] The transfer chamber (240) is arranged so that its length direction is parallel to the first direction (12). A plurality of process chambers (260) may be arranged on one or both sides of the transfer chamber (240). On one side and the other side of the transfer chamber (240), a plurality of process chambers (260) may be provided symmetrically with respect to the transfer chamber (240). Some of the plurality of process chambers (260) are arranged along the length direction of the transfer chamber (240). Additionally, some of the plurality of process chambers (260) are arranged stacked on top of each other. That is, on one side of the transfer chamber (240), the process chambers (260) may be arranged in an AXB arrangement. Here, A is the number of process chambers (260) provided in a row along the first direction (12), and B is the number of process chambers (260) provided in a row along the third direction (16). When four or six process chambers (260) are provided on one side of the transfer chamber (240), the multiple process chambers (260) may be arranged in a 2 x 2 or 3 x 2 array. The number of process chambers (260) may increase or decrease. Unlike the above description, the process chambers (260) may be provided only on one side of the transfer chamber (240). Additionally, the process chambers (260) may be provided in a single layer on one side and both sides of the transfer chamber (240).

[0049] A buffer unit (220) is positioned between the transfer frame (140) and the transfer chamber (240). The buffer unit (220) provides a space for the substrate (W) to stay before being transported between the transfer chamber (240) and the transfer frame (140). Inside the buffer unit (220), a slot (not shown) on which the substrate (W) is placed is provided. Multiple slots (not shown) are provided so as to be spaced apart from each other along a third direction (16). The buffer unit (220) has an open surface facing the transfer frame (140) and an open surface facing the transfer chamber (240).

[0050] The transfer frame (140) transports a substrate (W) between a carrier (130) seated in a load port (120) and a buffer unit (220). The transfer frame (140) is provided with an index rail (142) and an index robot (144). The index rail (142) is provided with its longitudinal direction parallel to the second direction (14). The index robot (144) is installed on the index rail (142) and moves linearly along the index rail (142) in the second direction (14). The index robot (144) includes a base (144a), a body (144b), and an index arm (144c). The base (144a) is installed to be movable along the index rail (142). The body (144b) is coupled to the base (144a). The body (144b) is provided to be movable along the third direction (16) on the base (144a). Additionally, the body (144b) is provided to be rotatable on the base (144a). An index arm (144c) is coupled to the body (144b) and is provided to be movable forward and backward relative to the body (144b). Multiple index arms (144c) are provided so that each is individually driven. The index arms (144c) are arranged to be stacked spaced apart from each other along the third direction (16). Some of the index arms (144c) may be used to transport the substrate (W) from the process module (20) to the carrier (18), and other parts may be used to transport the substrate (W) from the carrier (18) to the process module (20). This can prevent particles generated from the substrate (W) before processing from adhering to the substrate (W) after processing during the process of the index robot (144) bringing in and taking out the substrate (W).

[0051] The transfer chamber (240) transfers the substrate (W) between the buffer unit (220) and the process chamber (260), and between the process chambers (260). The transfer chamber (240) is provided with a guide rail (242) and a main robot (244). The guide rail (242) is positioned so that its longitudinal direction is parallel to the first direction (12). The main robot (244) is installed on the guide rail (242) and moves linearly along the first direction (12) on the guide rail (242). The main robot (244) includes a base (244a), a body (244b), and a main arm (244c). The base (244a) is installed so as to be movable along the guide rail (242). The body (244b) is coupled to the base (244a). The body (244b) is provided to be movable along the third direction (16) on the base (244a). Additionally, the body (244b) is provided to be rotatable on the base (244a). A main arm (244c) is coupled to the body (244b) and is provided to be movable forward and backward relative to the body (244b). Multiple main arms (244c) are provided so that each is individually driven. The main arms (244c) are arranged in a stacked manner spaced apart from each other along the third direction (16).

[0052] A substrate processing device (300) for performing a liquid processing process on a substrate (W) is provided in a process chamber (260). The substrate processing device (300) may have different structures depending on the type of liquid processing process performed. Alternatively, the substrate processing device (300) within each process chamber (260) may have the same structure. Optionally, a plurality of process chambers (260) may be divided into a plurality of groups, so that the substrate processing devices (300) within process chambers (260) belonging to the same group are identical to each other, and the structures of the substrate processing devices (300) within process chambers (260) belonging to different groups may be provided differently from each other.

[0053] FIG. 2 is a cross-sectional view showing a substrate processing device (300) according to one embodiment provided in the process chamber (260) of FIG. 1. Referring to FIG. 2, the substrate processing device (300) includes a processing vessel (320), a substrate support unit (340), a lifting unit (360), a liquid supply unit (390), and a controller (not shown).

[0054] The processing container (320) includes a container shape with an open top. The processing container (320) includes a first recovery container (321) and a second recovery container (322). Each recovery container (321, 322) recovers different processing liquids among the processing liquids used in the process. The first recovery container (321) is provided in an annular ring shape that surrounds the substrate support unit (340). The second recovery container (322) is provided in an annular ring shape that surrounds the substrate support unit (340). In one embodiment, the first recovery container (321) is provided in an annular ring shape that surrounds the second recovery container (322). The second recovery container (322) may be provided by being inserted into the first recovery container (321). The height of the second recovery container (322) may be higher than the height of the first recovery container (321). The second recovery container (322) may include a first guard portion (326) and a second guard portion (324). The first guard portion (326) may be provided at the top of the second recovery container (322). The first guard portion (326) is formed extending toward the substrate support unit (340), and the first guard portion (326) may be formed to be inclined upward as it faces toward the substrate support unit (340). In the second recovery container (322), the second guard portion (324) may be provided at a position spaced downward from the first guard portion (326). The second guard portion (324) is formed extending toward the substrate support unit (340), and the second guard portion (324) may be formed to be inclined upward as it faces toward the substrate support unit (340). The space between the first guard section (326) and the second guard section (324) functions as a first inlet (324a) into which the processing liquid flows. A second inlet (322a) is provided at the bottom of the second guard section (324). The first inlet (324a) and the second inlet (322a) may be located at different heights from each other. A hole (not shown) is formed in the second guard section (324) so ​​that the processing liquid flowing into the first inlet (324a) can flow into a second recovery line (322b) provided at the bottom of the second recovery container (322).A hole (not shown) in the second guard section (324) may be formed at the lowest height position in the second guard section (324). The processing liquid recovered into the first recovery container (321) is configured to flow into the first recovery line (321b) connected to the bottom surface of the first recovery container (321). The processing liquids introduced into each recovery container (321, 322) can be provided to an external processing liquid regeneration system (not shown) through each recovery line (321b, 322b) and reused.

[0055] The lifting unit (360) moves the processing container (320) in a straight line in the up and down direction. For example, the lifting unit (360) is coupled with the second recovery container (322) of the processing container (320) so that the relative height of the processing container (320) with respect to the substrate support unit (340) can be changed as the second recovery container (322) is moved up and down. The lifting unit (360) includes a bracket (362), a moving shaft (364), and a drive unit (366). The bracket (362) is fixedly installed on the outer wall of the processing container (320), and a moving shaft (364), which moves in the up and down direction by the drive unit (366), is fixedly coupled to the bracket (362). When a substrate (W) is loaded onto or unloaded from the substrate support unit (340), the second recovery container (322) of the processing container (320) is lowered so that the upper part of the substrate support unit (340) protrudes above the upper part of the processing container (320), specifically so that it protrudes higher than the first guard portion (326). Additionally, when the process is in progress, the height of the processing container (320) is adjusted so that the processing liquid can flow into the preset recovery containers (321, 322) depending on the type of processing liquid supplied to the substrate (W). Optionally, the lifting unit (360) may move the substrate support unit (340) in the up and down direction instead of the processing container (320). Optionally, the lifting unit (360) may move the entire processing container (320) so that it can be raised and lowered in the up and down direction. The lifting unit (360) is provided to adjust the relative height between the processing container (320) and the substrate support unit (340). If the configuration allows for adjusting the relative height between the processing container (320) and the substrate support unit (340), the embodiments of the processing container (320) and the lifting unit (360) may be provided in various structures and methods depending on the design.

[0056] The substrate support unit (340) supports the substrate (W) during the process and rotates the substrate (W).

[0057] The substrate support unit (340) includes a window member (348), a spin housing (342), a chuck pin (346), and a driving member (349).

[0058] The window member (348) is located at the bottom of the substrate (W). The window member (348) may be provided in a shape that generally corresponds to the substrate (W). For example, if the substrate (W) is a circular wafer, the window member (348) may be provided in a generally circular shape. The window member (348) may have the same diameter as the substrate (W), a smaller diameter than the substrate (W), or a larger diameter than the substrate (W). The window member (348) is a component that allows a laser beam to pass through and reach the substrate (W) and protects the composition of the substrate support member (340) from the chemical solution, and may be provided in various sizes and shapes depending on the design. The support member (113) may be made with a diameter larger than the diameter of the wafer.

[0059] The window member (348) may be made of a material with high microwave permeability. Accordingly, microwaves irradiated from the microwave application member (400) can pass through the window member (348). The window member (348) may be made of a material with excellent corrosion resistance so as not to react with the chemical solution. For this purpose, the material of the window member (348) may be, for example, quartz, glass, or sapphire.

[0060] A spin housing (342) may be provided on the bottom surface of a window member (349). The spin housing (342) supports the edge of the window member (349). The spin housing (342) provides a hollow space through which the rotating member (111) penetrates in the vertical direction. The hollow space formed by the spin housing (342) may be formed such that the inner diameter increases from the part adjacent to the microwave application member (400) toward the window member (349). The spin housing (342) may be a cylindrical shape in which the inner diameter increases from the bottom toward the top. It is sufficient for the spin housing (342) to have a structure such that microwaves emitted from the microwave application member (400), which will be described later, are transmitted to the substrate (W) to heat the substrate (W) to a desired temperature.

[0061] The driving member (349) is coupled to the spin housing (342) and can rotate the spin housing (342). Any driving member (349) capable of rotating the spin housing (342) can be used. For example, the driving member (349) may be provided as a hollow motor. According to one embodiment, the driving member (349) includes a stator (349a) and a rotor (349b). The stator (349a) is provided fixed in one position, and the rotor (349b) is coupled to the spin housing (342). According to one illustrated embodiment, a hollow motor is illustrated in which the rotor (349b) is provided in the inner diameter and the stator (349a) is provided in the outer diameter. According to the illustrated embodiment, the bottom of the spin housing (349) is coupled to the rotor (349b) and can be rotated by the rotation of the rotor (349b). When a hollow motor is used as the driving member (349), the manufacturing cost can be reduced as the hollow of the hollow motor can be selected to be smaller as the bottom of the spin housing (349) is provided narrower. According to one embodiment, the stator (349a) of the driving member (349) may be provided by being fixedly coupled to a support surface on which the processing container (320) is supported. According to one embodiment, a cover member (343) that protects the driving member (349) from the liquid may be further included.

[0062] The liquid supply unit (390) is configured to discharge a liquid medicine from the upper part of the substrate (W) to the substrate (W) and may include one or more liquid medicine discharge nozzles. The liquid supply unit (390) may pump and transport the liquid medicine stored in a storage tank (not shown) and discharge the liquid medicine to the substrate (W) through the liquid medicine discharge nozzles. The liquid supply unit (390) may be configured to include a driving unit so as to be movable between a process position directly above the center of the substrate (W) and a standby position away from the substrate (W).

[0063] The chemical solution supplied from the liquid supply unit (390) to the substrate (W) may vary depending on the substrate processing process. If the substrate processing process is a silicon nitride film etching process, the chemical solution may be a chemical solution containing phosphoric acid (H3PO4). The liquid supply unit (390) may further include a deionized water (DIW) supply nozzle for rinsing the substrate surface after the etching process, an isopropyl alcohol (IPA) discharge nozzle for performing a drying process after rinsing, and a nitrogen (N2) discharge nozzle. Although not shown, the liquid supply unit (390) may include a nozzle moving member (not shown) capable of supporting the chemical solution discharge nozzle and moving the chemical solution discharge nozzle. The nozzle moving member (not shown) may include a support shaft (not shown), an arm (not shown), and an actuator (not shown). The support shaft (not shown) is located on one side of the processing vessel (320). A support shaft (not shown) includes a rod shape whose longitudinal direction faces a third direction. The support shaft (not shown) is provided to be rotatable by an actuator (not shown). An arm (not shown) is coupled to the top of the support shaft (not shown). The arm (not shown) may extend vertically from the support shaft (not shown). A chemical dispensing nozzle is fixedly coupled to the end of the arm (not shown). As the support shaft (not shown) rotates, the chemical dispensing nozzle can swing together with the arm (not shown). The chemical dispensing nozzle can swing to move to a process position and a standby position. Optionally, the support shaft (not shown) may be provided to be capable of vertical movement. Additionally, the arm (not shown) may be provided to be capable of forward and backward movement along its longitudinal direction.

[0064] The microwave application member (400) emits the received microwave. The microwave is emitted to the substrate (W). The substrate (W) that receives the microwave is heated. (Specific characteristics (frequency, power, duty cycle, etc.) of the microwave applied to obtain 600 °C / s or more are described.) According to the embodiment, the heating rate of the substrate by the microwave is 600 °C / s or more.

[0065] A microwave application member (400) is connected to a magnetron (500) that generates microwaves via a waveguide (443). In an embodiment of the present invention, the magnetron (500) corresponds to a microwave source. The waveguide (443) transmits microwaves to the microwave application member (400). A tuner (430) may be installed in the microwave transmission path of the waveguide (443). The tuner (430) performs the function of impedance matching. Impedance matching by the tuner (430) may be performed based on the detection result of the reflected wave at a detector (microwave detector).

[0066] The microwave application member (400) includes a microwave introduction port (411) and a transparent window (415). The transparent window (415) is provided at the end of the microwave introduction port (411) to block the microwave introduction port (411). The transparent window (415) is formed by a dielectric material. For example, quartz, ceramic, etc., may be used as the material for the transparent window (415). The interior of the microwave application member (400) can be sealed by the combination of the transparent window (415) and the microwave introduction port (411).

[0067] The upper part of the transparent window (415) can be covered by a cover member (412). The inner diameter of the cover member (412) is smaller than the diameter of the transparent window (415) but larger than the inner diameter of the microwave introduction port (411), so that the phenomenon of microwave reflection by the cover member (412) can be eliminated (see FIG. 5).

[0068] In this example, the magnetron (500) is installed outside the process chamber (260), but the magnetron (500) may also be installed inside the process chamber (260). If the magnetron (500) is installed inside the process chamber, it is thought that the process effect caused by heat generation due to the operation of the magnetron (500) should be considered. .

[0069] A controller (not shown) can control a substrate processing device. The controller (not shown) can control the components of a substrate processing system so that the substrate is processed according to a set process. Additionally, the controller (not shown) may be equipped with a process controller consisting of a microprocessor (computer) that executes control of the substrate processing device, a user interface consisting of a keyboard for an operator to perform command input operations to manage the substrate processing device, a display for visualizing and displaying the operating status of the substrate processing device, a control program for executing processing in the substrate processing system under the control of the process controller, and a memory unit storing a program for executing processing in each component according to various data and processing conditions, i.e., a processing recipe. Additionally, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium within the memory unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0070] FIGS. 3 and 4 illustrate and sequentially list the operation method of a substrate processing device according to the first embodiment of the present invention.

[0071] Refer to FIGS. 3 and FIGS. 4 in sequence. A substrate (W) is supported by a substrate support unit (300) by a chuck pin (346). According to the driving of a driving member (349), the substrate (W) is rotated, and a liquid supply unit (390) supplies a chemical solution onto the rotating substrate (W). Power is supplied to a magnetron (500) so that a microwave application unit (400) radiates microwaves toward the substrate (W). The substrate (W) is heated by the microwaves (W). As the substrate (W) is heated, the chemical solution reacts with the substrate (W), and the substrate is processed. The processing of the substrate (W) by the chemical solution may be an etching process. The chemical solution may be phosphoric acid.

[0072] FIG. 6 is a schematic diagram showing a method of processing a substrate by applying a microwave application member (1400) according to a second embodiment of the present invention. According to the second embodiment, the microwave application member (1400) applies a plurality of microwaves.

[0073] In one example, the microwave application member (1400) includes a first microwave application member (400-1) and a second microwave application member (400-2). The first microwave application member (400-1) and the second microwave application member (400-2) each emit different microwaves. The first microwave application member (400-1) is connected to a first magnetron, and the second microwave application member (400-2) is connected to a second magnetron. For convenience, the microwave emitted by the first microwave application member (400-1) is referred to as the first microwave, and the microwave emitted by the second microwave application member (400-2) is referred to as the second microwave. The first microwave and the second microwave are combined and transmitted to a substrate (W).

[0074] FIG. 7 is a graph showing a combination example of a first microwave and a second microwave emitted from a microwave application member (1400) according to a second embodiment of the present invention.

[0075] FIG. 7(a) is a first combination example, FIG. 7(b) is a second combination example, and FIG. 7(c) is a third combination example. The first microwave emitted from the first magnetron (μ-Wave Source 1) and the second microwave emitted from the second magnetron (μ-Wave Source 2) may differ in at least one of the pulse width, intensity, and duty ratio. Depending on the film quality of the substrate (W) to be processed, the combination of the first microwave and the second microwave may be different. The first microwave and the second microwave may vary in at least one of the pulse width, intensity, and duty ratio over time. According to the embodiment, a selective heating effect on the film quality can be obtained through frequency modulation of 10% or more. For example, damage to the substrate (W) can be minimized by using High μ-Wave (microwave of a higher frequency) when the thickness of the film deposited on the substrate (W) is 500 nm or less, and by using Low μ-Wave (microwave of a lower frequency) when the thickness of the film deposited on the substrate (W) is 500 nm or more.

[0076] In addition, reflected waves are controlled by adjusting the phase difference of the microwaves. For example, by controlling the superposition phenomenon between the propagating wave and the reflected wave by adjusting the phase difference of the microwaves, the entire surface of the substrate can be heated uniformly (heating uniformity can be increased).

[0077] Hereinafter, a substrate processing apparatus according to the second embodiment provided in the process chamber (260) of FIG. 1 will be described. In describing the substrate processing apparatus according to the second embodiment, the description of the first embodiment will substitute for the configuration of the substrate processing apparatus (300) of the first embodiment with reference to FIG. 2.

[0078] A back nozzle (not shown) is provided in the substrate processing apparatus according to the second embodiment. The back nozzle (not shown) is located inside the spin housing (342) and includes a tubular body (not shown) that penetrates the window member (348). The tubular body (not shown) may be made of a material with high microwave permeability. Accordingly, microwaves transmitted to the substrate (W) can be transmitted without interference from the tubular body (not shown). The tubular body (not shown) may be provided of a material with high corrosion resistance so as not to react with the transported fluid. Additionally, it may be provided of a material with high corrosion resistance so as not to react with the fluid supplied to and scattered on the substrate (W). For this purpose, the material of the tubular body (not shown) may be, for example, quartz, glass, or sapphire. The flow path formed by the tubular body (not shown) may be connected to a first supply line (not shown) that transmits the first fluid. The flow path formed by the pipe (not shown) can be connected to a second supply line (not shown) that transmits a second fluid. The first fluid may be pure water. The second fluid may be nitrogen.

[0079] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the disclosed content, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required for specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Furthermore, the appended claims should be interpreted as including other embodiments.

Claims

Claim 1 A substrate processing apparatus comprising: a chamber providing a processing space; a substrate support unit provided in the processing space to support a substrate and rotate the substrate; a liquid supply unit including a liquid discharge nozzle for discharging a liquid to the substrate supported by the substrate support unit; and a microwave application member emitting a microwave applied to the substrate, wherein the microwave application member emits a first microwave and a second microwave different from the first microwave, and the second microwave cancels out the superposition phenomenon between the traveling wave of the first microwave reaching the substrate and the reflected wave. Claim 2 In claim 1, the substrate support unit comprises: a window member provided at the bottom of the substrate and made of a material through which the microwave irradiated from the microwave application member can pass; a chuck pin that supports the side of the substrate and separates the window member and the substrate by a predetermined distance; a spin housing coupled to the window member and penetrating in the vertical direction to provide a path for transmitting the microwave; and a driving member that rotates the spin housing, wherein the microwave application member is provided at the bottom of the window member. Claim 3 delete Claim 4 delete Claim 5 A substrate processing apparatus according to claim 1, wherein the first microwave and the second microwave differ in at least one of pulse width, intensity, and duty ratio. Claim 6 In claim 5, the above microwave is provided differently depending on the type of film material in a substrate processing device. Claim 7 delete Claim 8 In claim 1, the microwave application member is a substrate processing device provided below the substrate. Claim 9 In claim 1, the above chemical solution is a phosphoric acid aqueous solution, and the substrate processing apparatus. Claim 10 A substrate processing apparatus according to claim 1, further comprising a controller, wherein the controller controls the substrate support unit and the liquid supply unit to form a liquid film of the chemical solution on the upper surface of the substrate while rotating the substrate, and applies the microwave to the substrate through the microwave application member. Claim 11 A substrate treatment method wherein a liquid film formed by a chemical solution is heated by applying a microwave, wherein the microwave is a superposition of a first microwave and a second microwave different from the first microwave. Claim 12 A substrate processing method according to claim 11, wherein the substrate is supported by a substrate support unit that supports the substrate and is rotatable, and a microwave application member that applies the microwave is provided below the substrate. Claim 13 In claim 11, the above chemical solution is a phosphoric acid aqueous solution, a substrate treatment method. Claim 14 In claim 11, the above microwave is provided differently depending on the type of film material in a substrate processing method. Claim 15 delete Claim 16 A substrate processing method according to claim 11, wherein the first microwave and the second microwave differ in at least one of pulse width, intensity, and duty ratio. Claim 17 A substrate processing method according to claim 11, wherein the second microwave cancels out the superposition phenomenon between the traveling wave of the first microwave reaching the substrate and the reflected wave. Claim 18 In claim 11, the microwave is transmitted to the substrate through a pipe through which a fluid that processes the lower part of the substrate flows. Claim 19 A method for processing a substrate according to claim 11, wherein the thickness of the film to be processed is a first thickness, and when the first thickness is greater than a set thickness, a first microwave is applied, and when the first thickness is smaller than a set thickness, a second microwave is applied, and the first microwave has a higher frequency than the second microwave. Claim 20 delete

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