Gas supply system for substrate processing equipment, and substrate processing equipment having the same

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a gas supply system of a substrate processing apparatus that performs substrate processing using plasma, and a substrate processing apparatus including the same. The present invention comprises a plurality of process gas injection units (310, 321~324) installed at each of a plurality of pre-set installation positions (㉧~④) on the upper side of a process chamber (100) forming a sealed processing space (S) and supplying process gas to the processing space (S); A gas supply system is disclosed, comprising a plurality of gas supply volume control units (430; 431~435, 530; 531~535) installed corresponding to each of the plurality of process gas injection units (310, 321~324) and controlling the gas supply flow rate for each of the process gas injection units (310, 321~324), wherein the gas supply volume of the remaining gas supply volume control units (432~435, 532~535) is controlled based on the gas supply volume of one of the plurality of gas supply volume control units (431, 531) among the plurality of gas supply volume control units (430; 431~435, 530; 531~535).

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