Assembly Substrate Structure of Semiconductor Light Emitting Device and Display Device including the same

Abstract

The embodiment relates to an assembly substrate structure of a semiconductor light-emitting element and a display device including the same. The assembly substrate structure of a semiconductor light-emitting device according to an embodiment may include a first assembly substrate structure and a second assembly substrate structure spaced apart and disposed on a substrate. The above-described first assembly substrate structure may include a first partition wall having a first electrode and a second electrode spaced apart by a first distance and a circular first assembly hole. The above second assembly substrate structure may include a second partition wall having a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and an elliptical second assembly hole. The above second assembly hole may include a second-1 assembly hole and a second-2 assembly hole, at least partially overlapping each other.

Description

Technology Field

[0001] The embodiments relate to an assembly substrate structure of a semiconductor light-emitting element and a display device including the same. Specifically, the embodiments relate to an assembly substrate structure of a semiconductor light-emitting element for a display panel and a display device including the same. Background Technology

[0002] Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses a micro-LED, which is a semiconductor light-emitting element having a diameter or cross-sectional area of ​​100 μm or less, as a display element.

[0004] Because micro-LED displays use micro-LEDs, which are semiconductor light-emitting devices, as display elements, they possess excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust size or resolution by separating and combining screens in a modular manner, and also have the advantage of enabling the implementation of flexible displays.

[0007] However, since large micro-LED displays require millions of micro-LEDs, there is a technical challenge in rapidly and accurately transferring the micro-LEDs to the display panel.

[0008] Recently developed transfer technologies include the pick-and-place process, the laser lift-off method, and the self-assembly method.

[0009] Among these, the self-assembly method is a technique in which semiconductor light-emitting elements autonomously find their assembly positions within a fluid, making it advantageous for the implementation of large-screen display devices.

[0010] Recently, U.S. Patent No. 9,825,202 and others have presented micro-LED structures suitable for self-assembly, but research on the technology for manufacturing displays through the self-assembly of micro-LEDs is still insufficient.

[0011] In particular, in conventional technology, when rapidly transferring millions of semiconductor light-emitting elements onto a large display, while the transfer speed can be improved, there is a technical problem in that the transfer error rate may increase, resulting in a low transfer yield.

[0012] In related technologies, a self-assembly transfer process using dielectrophoresis (DEP) is being attempted, but there is a problem with a low self-assembly rate due to factors such as the non-uniformity of the DEP force.

[0014] Meanwhile, according to undisclosed internal technology, the simultaneous assembly of red (R) micro LED chips, green (G) micro LED chips, and blue (B) LED chips using dielectrophoresis is being researched.

[0015] However, research was conducted on the exclusivity of chip shapes by making the horizontal cross-sectional shapes of the R, G, and B LED chips different so that the R, G, and B LED chips could be accurately assembled into their respective assembly holes.

[0016] For example, according to undisclosed internal technology, the horizontal cross-section of the R LED chip is made into a circular cross-section, and based on this, the long axis is extended and the short axis is reduced at regular intervals to form two elliptical shapes, thereby producing B LED and G LED, and assembly hole patterns (one circular and two elliptical) corresponding to these circular and elliptical LEDs are formed on a substrate.

[0017] In addition, spaced assembly electrodes were formed inside the assembly hole to allow for LED assembly, and each assembly electrode was positioned to overlap the LED chip. Subsequently, an electric field was formed between two opposing assembly electrodes to assemble the micro-LED using dielectrophoretic force.

[0018] However, according to internal research, even though the shapes of R, G, and B LED chips are mutually exclusive, the applied DEP force is similar or does not differ significantly, leading to a screen problem where other LED chips block the entrance of the assembly hole. For example, a screen problem occurred where an R LED chip or a G LED chip blocked the entrance of the assembly hole intended for a B LED chip, and consequently, a problem of reduced DEP selectivity between LED chips occurred.

[0020] Meanwhile, when increasing the exclusivity by creating greater differences in the horizontal cross-sectional shapes of the R, G, and B LED chips to improve DEP selectivity by increasing the deviation of the DEP force in each assembly hole among these R, G, and B LED chips, a technical contradiction arises in which the assembling probability of the chips being seated in the assembly holes decreases due to the elliptical LED chips and elliptical assembly hole shapes. The problem to be solved

[0021] One of the technical objectives of the embodiment is to provide an assembly substrate for a semiconductor light-emitting device and a display device including the same, which can increase the assembly probability while increasing the DEP selectivity for color-specific LED chips in a self-assembly method using dielectrophoresis (DEP).

[0022] The technical problems of the embodiments are not limited to those described in this section and include those that can be understood from the entire specification. means of solving the problem

[0023] The assembly substrate structure of a semiconductor light-emitting device according to an embodiment may include a first assembly substrate structure and a second assembly substrate structure spaced apart and disposed on a substrate.

[0024] The above-described first assembly substrate structure may include a first partition wall having a first electrode and a second electrode spaced apart by a first distance and a circular first assembly hole.

[0025] The above second assembly substrate structure may include a second partition wall having a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance and an elliptical second assembly hole.

[0026] The above second assembly hole may include a second-1 assembly hole and a second-2 assembly hole, at least partially overlapping each other.

[0027] The above 2-1 assembly hole and the above 2-2 assembly hole may have a 1-2 width in the direction of the major axis, which is the central axis, and a 2-2 width in the direction of the minor axis perpendicular to the central axis.

[0028] The embodiment may further include a third assembly substrate structure disposed on one side of the second assembly substrate structure.

[0029] The above third assembly substrate structure may include a third partition wall having a third assembly hole, a fifth electrode and a sixth electrode, the third electrode having a vertical distance greater than the second distance.

[0030] The above third assembly hole may include a third-1 assembly hole and a third-2 assembly hole, at least partially overlapping each other.

[0031] The above 3-1 assembly hole and the above 3-2 assembly hole may have a 1-3 width in the direction of the major axis, which is the central axis, and a 2-3 width in the direction of the minor axis perpendicular to the central axis.

[0032] The above 1-3 width is larger than the above 1-2 width, and the above 2-3 width may be smaller than the above 2-2 width.

[0033] The third electrode may include a third protruding electrode that protrudes in the direction of the fourth electrode.

[0034] The third electrode may include a third electrode body, a third-1 protruding electrode protruding toward the fourth electrode, and a third-2 protruding electrode protruding toward the fourth electrode and positioned adjacent to the third-1 protruding electrode.

[0035] The surfaces of the above 3-1 protruding electrode and the above 3-2 protruding electrode may be flat.

[0036] The above-mentioned fourth electrode may include a fourth electrode body, a fourth-1 protruding electrode protruding in the direction of the third electrode and arranged adjacently, and a fourth-2 protruding electrode.

[0037] The surfaces of the above 4-1 protruding electrode and 4-2 protruding electrode may be flat.

[0038] The flat surface of the above 3-1 protruding electrode and the flat surface of the above 4-1 protruding electrode may be parallel to each other.

[0039] In the second assembly substrate structure above, the surfaces of the third-1 protruding electrode and the third-2 protruding electrode may each include a first curvature recess and a third curvature recess that are concave in the direction of the fourth electrode.

[0040] The surfaces of the above-mentioned 4-1 protruding electrode and the above-mentioned 4-2 protruding electrode may each include a second curvature recess and a fourth curvature recess that are concave in the direction of the above-mentioned 3rd electrode.

[0041] The above second assembly substrate structure may further include a third-3 protruding electrode disposed between the third-1 protruding electrode and the third-2 protruding electrode.

[0042] In addition, the display device according to the embodiment may include an assembly substrate structure of any one of the semiconductor light-emitting elements. Effects of the invention

[0043] According to the assembly substrate of a semiconductor light-emitting device and a display device including the same according to the embodiment, there is a special technical effect of simultaneously increasing the assembly probability while increasing the DEP selectivity for color-specific LED chips in a self-assembly method using dielectrophoresis (DEP).

[0044] For example, according to the embodiment, since the DEP force of the second semiconductor light-emitting element (150G) corresponding to the second assembly hole (203b) including the overlapping assembly hole is significantly greater than twice the DEP force exerted on the first semiconductor light-emitting element (150R), there is a special technical effect that can significantly reduce the interference effect of the first semiconductor light-emitting element (150R) not corresponding to the assembly hole.

[0045] In addition, according to the embodiment, the screen problem of the circular LED can be solved by increasing the difference in DEP force applied to the elliptical second semiconductor light-emitting element (150G) compared to the DEP force applied to the circular first semiconductor light-emitting element (150R).

[0046] For example, in the embodiment, the second assembly substrate structure (N2) is arranged in an overlapping form with the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) as shown in FIG. 15a, and by controlling the distance between the assembly electrodes, as the rotation angle increases, the overlapping portion between the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) decreases, thereby having the effect of expanding the area to be assembled. Through this, the area of ​​the assembly region substantially contributed by the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) is expanded, and the area of ​​the second region (R2) overlapping with the assembly electrode is also expanded, thereby increasing the probability of assembly and having a complex technical effect of increasing the DEP force on the second semiconductor light-emitting device (150G).

[0047] In addition, according to the embodiment, by overlapping the 2-1 assembly hole (203b1) and the 2-2 assembly hole (203b2) to increase the probability of correct assembly and increasing the DEP force applied to the 2 semiconductor light-emitting element (150G), there is a special technical effect that not only increases the probability of correct assembly but also significantly improves the speed of correct assembly.

[0048] In addition, according to the second-2 assembly substrate structure (N2b) according to the embodiment, by providing concave recesses on the surfaces of the third electrode (201b) and the fourth electrode (202b), the area in which the circular first semiconductor light-emitting element (150R) can overlap with the third electrode (201b) and the fourth electrode (202b) can be further reduced.

[0049] Through this, even if a circular first semiconductor light-emitting element (150R) is temporarily positioned on the second-2 assembly substrate structure (N2b) according to the embodiment, the DEP force thereon is significantly weak, so there is a special technical effect that can significantly reduce the possibility of the first semiconductor light-emitting element (150R) interfering with the assembly of the second semiconductor light-emitting element (150G).

[0050] In addition, according to the second-third assembly substrate structure (N2c) according to the embodiment, there is a technical effect of further increasing the probability of assembling an elliptical semiconductor light-emitting element by including at least three assembly holes that partially overlap each other.

[0051] In addition, according to the second-third assembly substrate structure (N2c) according to the embodiment, at least three protruding electrodes are arranged to face each other on the third electrode (201b) and the fourth electrode (202b), so that the distance between the third electrode (201b) and the fourth electrode (202b) is designed to be equal to or greater than the diameter of the first circular semiconductor light-emitting element, thereby further reducing the area where the first circular semiconductor light-emitting element (150R) can overlap with the third electrode (201b) and the fourth electrode (202b).

[0052] Through this, even if a circular first semiconductor light-emitting element (150R) is temporarily positioned on the 232 assembly substrate structure (N2c) according to the embodiment, the DEP force on it is significantly weak, so the possibility of the first semiconductor light-emitting element (150R) interfering with the assembly of the second semiconductor light-emitting element (150G) can be significantly reduced, and at the same time, by including three mutually overlapping assembly holes, the probability of an elliptical semiconductor light-emitting element being assembled can be significantly increased, thus providing a complex technical effect.

[0053] The technical effects of the embodiments are not limited to those described in this section and include those that can be understood from the entire specification. Brief explanation of the drawing

[0054] FIG. 1 is an exemplary diagram of a living room of a house in which a display device according to an embodiment is placed. FIG. 2 is a block diagram schematically showing a display device according to an embodiment. Figure 3 is a circuit diagram showing an example of a pixel of Figure 2. FIG. 4 is an enlarged view of the first panel area of ​​the display device of FIG. 1. FIG. 5 is a cross-sectional view along the line B1-B2 in area A2 of FIG. 4. FIG. 6 is an example diagram showing a light-emitting element according to an embodiment being assembled on a substrate by a self-assembly method. Figure 7 is a partial enlarged view of area A3 in Figure 6. FIGS. 8A and FIGS. 8B are structural diagrams of an assembled substrate according to an embodiment. FIG. 8c is an example of an assembly hole shown in FIG. 8a. FIGS. 9a to 9c are schematic diagrams showing the degree of rotation of a semiconductor light-emitting element to the standard assembly level on an assembly hole. FIGS. 10a and FIGS. 10b show DEP force data according to the rotation angle of a semiconductor light-emitting element in an assembly hole. FIG. 11a is a plan view in which a first semiconductor light-emitting element is positioned on a third assembly hole. FIG. 11b is a cross-sectional view along the line C1-C2 in FIG. 11a. FIG. 12a is a plan view in which a first semiconductor light-emitting element is fitted and positioned on a third assembly hole. FIG. 12b is a cross-sectional view along the line C1-C2 in FIG. 12a. FIG. 13a is a new superimposed assembly substrate structure for assembling the first to third semiconductor light-emitting elements of an embodiment. FIG. 13b is a diagram showing the state in which the first to third semiconductor light-emitting elements are assembled on the superimposed assembly substrate structure of the embodiment. FIGS. 14a to 14d are manufacturing process drawings for a second assembly substrate structure of the superimposed assembly substrate structure of the embodiment shown in FIG. 13a. FIG. 15a is a schematic diagram of a second semiconductor light-emitting element being assembled on a second assembly substrate structure shown in FIG. 13a. FIG. 15b is a comparative schematic diagram showing a first semiconductor light-emitting element positioned on a second assembled substrate structure shown in FIG. 13a. FIG. 16 is DEP force data according to the rotation angle of a semiconductor light-emitting element in an assembly hole of a superimposed assembly substrate structure according to an embodiment. FIG. 17a is a schematic diagram of a third semiconductor light-emitting element being assembled on a third assembly substrate structure shown in FIG. 13a. FIG. 17b is a comparative schematic diagram showing a second semiconductor light-emitting element positioned on a third assembled substrate structure shown in FIG. 13a. FIGS. 18a and FIGS. 18b show the second-2 assembly substrate structure according to the embodiment. FIGS. 19a and FIGS. 19b show the second-third assembly substrate structure according to the embodiment. Specific details for implementing the invention

[0055] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes 'module' and 'part' for components used in the following description are assigned or used interchangeably for the sake of ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, the attached drawings are intended to facilitate an easy understanding of the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited by the attached drawings. Additionally, when an element such as a layer, region, or substrate is referred to as existing 'on' another component, this includes existing directly on the other element or having other intermediate elements existing between them.

[0056] The display devices described in this specification may include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigation systems, Slate PCs, Tablet PCs, Ultra-Books, desktop computers, etc. However, the configurations according to the embodiments described in this specification may be applied to devices capable of display, even if they are new product forms developed in the future.

[0058] A semiconductor light-emitting element and a display device including the same according to the following embodiments will be described.

[0059] FIG. 1 illustrates a living room of a house in which a display device (100) according to an embodiment is placed.

[0060] The display device (100) of the embodiment can display the status of various electronic products such as a washing machine (101), a robot vacuum cleaner (102), and an air purifier (103), communicate with each electronic product based on IoT, and control each electronic product based on user setting data.

[0061] The display device (100) according to the embodiment may include a flexible display fabricated on a thin and flexible substrate. The flexible display can be bent or rolled like paper while maintaining the characteristics of a conventional flat panel display.

[0062] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a single color. The unit pixels of a flexible display can be realized by a light-emitting element. In the embodiments, the light-emitting element may be a Micro-LED or a Nano-LED, but is not limited thereto.

[0064] FIG. 2 is a block diagram schematically showing a display device according to an embodiment, and FIG. 3 is a circuit diagram showing an example of a pixel of FIG. 2.

[0065] Referring to FIGS. 2 and FIGS. 3, a display device according to an embodiment may include a display panel (10), a driving circuit (20), a scan driving unit (30), and a power supply circuit (50).

[0066] The display device (100) of the embodiment can drive a light-emitting element using an active matrix (AM) method or a passive matrix (PM) method.

[0067] The driving circuit (20) may include a data driving unit (21) and a timing control unit (22).

[0068] The display panel (10) may be divided into a display area (DA) and a non-display area (NDA) placed around the display area (DA). The display area (DA) is an area where pixels (PX) are formed to display an image. The display panel (10) may include data lines (D1~Dm, where m is an integer greater than or equal to 2), scan lines (S1~Sn, where n is an integer greater than or equal to 2) that intersect the data lines (D1~Dm), a high-potential voltage line to which a high-potential voltage is supplied, a low-potential voltage line to which a low-potential voltage is supplied, and pixels (PX) connected to the data lines (D1~Dm) and the scan lines (S1~Sn).

[0069] Each of the pixels (PX) may include a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3). The first subpixel (PX1) may emit first color light of a first wavelength, the second subpixel (PX2) may emit second color light of a second wavelength, and the third subpixel (PX3) may emit third color light of a third wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but is not limited thereto. Additionally, FIG. 2 illustrates that each of the pixels (PX) includes three subpixels, but is not limited thereto. That is, each of the pixels (PX) may include four or more subpixels.

[0070] Each of the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) can be connected to at least one of the data lines (D1~Dm), at least one of the scan lines (S1~Sn), and a high potential voltage line. The first subpixel (PX1) may include light-emitting elements (LDs) as shown in FIG. 3, a plurality of transistors for supplying current to the light-emitting elements (LDs), and at least one capacitor (Cst).

[0071] Although not shown in the drawing, each of the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may include only one light-emitting element (LD) and at least one capacitor (Cst).

[0072] Each of the light-emitting elements (LDs) may be a semiconductor light-emitting diode comprising a first electrode, a plurality of conductive semiconductor layers, and a second electrode. Here, the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but is not limited thereto.

[0073] Referring to FIG. 3, a plurality of transistors may include a driving transistor (DT) that supplies current to light-emitting elements (LDs) and a scan transistor (ST) that supplies a data voltage to the gate electrode of the driving transistor (DT). The driving transistor (DT) may include a gate electrode connected to the source electrode of the scan transistor (ST), a source electrode connected to a high-potential voltage line to which a high-potential voltage is applied, and a drain electrode connected to the first electrodes of the light-emitting elements (LDs). The scan transistor (ST) may include a gate electrode connected to a scan line (Sk, where k is an integer satisfying 1 ≤ k ≤ n), a source electrode connected to the gate electrode of the driving transistor (DT), and a drain electrode connected to a data line (Dj, where j is an integer satisfying 1 ≤ j ≤ m).

[0074] A capacitor (Cst) is formed between the gate electrode and the source electrode of the driving transistor (DT). The storage capacitor (Cst) can charge the difference between the gate voltage and the source voltage of the driving transistor (DT).

[0075] The driving transistor (DT) and the scan transistor (ST) can be formed as thin film transistors. Additionally, although FIG. 3 describes the driving transistor (DT) and the scan transistor (ST) as being formed as P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), the present invention is not limited thereto. The driving transistor (DT) and the scan transistor (ST) may also be formed as N-type MOSFETs. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor (DT) and the scan transistor (ST) may be changed.

[0076] Additionally, FIG. 3 illustrates that each of the first subpixel (PX1), second subpixel (PX2), and third subpixel (PX3) comprises a 2T1C (2 Transistor - 1 Capacitor) having one driving transistor (DT), one scan transistor (ST), and one capacitor (Cst), but the present invention is not limited thereto. Each of the first subpixel (PX1), second subpixel (PX2), and third subpixel (PX3) may comprise a plurality of scan transistors (ST) and a plurality of capacitors (Cst).

[0077] Referring again to FIG. 2, the driving circuit (20) outputs signals and voltages for driving the display panel (10). To this end, the driving circuit (20) may include a data driving unit (21) and a timing control unit (22).

[0078] The data driver (21) receives digital video data (DATA) and a source control signal (DCS) from the timing control unit (22). The data driver (21) converts the digital video data (DATA) into analog data voltages according to the source control signal (DCS) and supplies them to the data lines (D1~Dm) of the display panel (10).

[0079] The timing control unit (22) receives digital video data (DATA) and timing signals from a host system. The timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smartphone or tablet PC, a monitor, a system-on-chip of a TV, etc.

[0080] The scan driver (30) receives a scan control signal (SCS) from the timing control unit (22). The scan driver (30) generates scan signals according to the scan control signal (SCS) and supplies them to the scan lines (S1~Sn) of the display panel (10). The scan driver (30) may be formed in the non-display area (NDA) of the display panel (10) by including a plurality of transistors. Alternatively, the scan driver (30) may be formed as an integrated circuit, in which case it may be mounted on a gate flexible film attached to the other side of the display panel (10).

[0081] The power supply circuit (50) can generate a high potential voltage (VDD) and a low potential voltage (VSS) from the main power supply to drive the light-emitting elements (LDs) of the display panel (10) and supply them to the high potential voltage line and the low potential voltage line of the display panel (10). In addition, the power supply circuit (50) can generate and supply driving voltages from the main power supply to drive the driving circuit (20) and the scan driving unit (30).

[0083] Next, Fig. 4 is an enlarged view of the first panel area (A1) of the display device of Fig. 1.

[0084] According to FIG. 4, the display device (100) of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel regions, such as a first panel region (A1), by tiling.

[0085] The first panel area (A1) may include a plurality of light-emitting elements (150) arranged for each unit pixel (PX in FIG. 2).

[0086] For example, a unit pixel (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, a plurality of red light-emitting elements (150R) may be placed in the first sub-pixel (PX1), a plurality of green light-emitting elements (150G) may be placed in the second sub-pixel (PX2), and a plurality of blue light-emitting elements (150B) may be placed in the third sub-pixel (PX3). The unit pixel (PX) may further include a fourth sub-pixel in which no light-emitting elements are placed, but is not limited thereto. Meanwhile, the light-emitting element (150) may be a semiconductor light-emitting element.

[0088] Next, Fig. 5 is a cross-sectional view along the line B1-B2 in area A2 of Fig. 4.

[0089] Referring to FIG. 5, the display device (100) of the embodiment may include a substrate (200a), spaced-apart wiring (201a, 202a), a first insulating layer (211a), a second insulating layer (211b), a third insulating layer (206), and a plurality of light-emitting elements (150).

[0090] The wiring may include a first wiring (201a) and a second wiring (202a) spaced apart from each other. The first wiring (201a) and the second wiring (202a) may function as panel wiring for applying power to the light-emitting element (150) in the panel, and may also function as assembly electrodes for generating a dielectrophoretic force for assembly in the case of self-assembly of the light-emitting element (150).

[0091] The wiring (201a, 202a) may be formed of a transparent electrode (ITO) or may include a metallic material with excellent electrical conductivity. For example, the wiring (201a, 202a) may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and molybdenum (Mo), or an alloy thereof.

[0092] A first insulating layer (211a) may be disposed between the first wiring (201a) and the second wiring (202a), and a second insulating layer (211b) may be disposed on the first wiring (201a) and the second wiring (202a). The first insulating layer (211a) and the second insulating layer (211b) may be oxide films, nitride films, etc., but are not limited thereto.

[0094] The light-emitting element (150) may include a red light-emitting element (150R), a green light-emitting element (150G), and a blue light-emitting element (150B0) to form a unit pixel (sub-pixel), but is not limited thereto, and may also implement red and green by providing a red phosphor and a green phosphor, etc.

[0095] The substrate (200) may be formed of glass or polyimide. Additionally, the substrate (200) may include flexible materials such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, the substrate (200) may be a transparent material, but is not limited thereto. The substrate (200) may function as a support substrate in a panel and may also function as an assembly substrate during the self-assembly of a light-emitting element.

[0096] The third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0097] The third insulating layer (206) may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer may be flexible to enable the flexible function of the display device. For example, the third insulating layer (206) may be an anisotropy conductive film (ACF), an anisotropy conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer that is electrically conductive in the direction perpendicular to the thickness, but electrically insulating in the direction horizontal to the thickness.

[0098] The spacing between the wiring (201a, 202a) is formed to be smaller than the width of the light-emitting element (150) and the width of the assembly hole (203), so that the assembly position of the light-emitting element (150) using an electric field can be fixed more precisely.

[0099] A third insulating layer (206) is formed on the wiring (201a, 202a) to protect the wiring (201a, 202a) from fluid (1200) and prevent leakage of current flowing through the wiring (201a, 202a). The third insulating layer (206) may be formed as a single layer or multiple layers of an inorganic insulator such as silica or alumina, or an organic insulator.

[0100] Additionally, the third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0102] The third insulating layer (206) has a partition wall, and an assembly hole (203) can be formed by this partition wall. For example, the third insulating layer (206) may include an assembly hole (203) into which a light-emitting element (150) is inserted (see FIG. 6). Thus, when self-assembling, the light-emitting element (150) can be easily inserted into the assembly hole (203) of the third insulating layer (206). The assembly hole (203) may be called an insertion hole, a fixing hole, an alignment hole, etc.

[0103] The assembly hole (203) may have a shape and size corresponding to the shape of the light-emitting element (150) to be assembled at the corresponding location. Accordingly, it is possible to prevent other light-emitting elements from being assembled in the assembly hole (203) or multiple light-emitting elements from being assembled.

[0105] Next, FIG. 6 is a diagram showing an example in which a light-emitting element according to an embodiment is assembled onto a substrate by a self-assembly method, and FIG. 7 is a partial enlarged view of area A3 in FIG. 6. FIG. 7 is a diagram in which area A3 has been rotated 180 degrees for convenience of explanation.

[0106] Based on FIGS. 6 and 7, an example of assembling a semiconductor light-emitting element according to an embodiment into a display panel by a self-assembly method using an electromagnetic field will be described.

[0107] The assembly substrate (200) described below may also function as a panel substrate in a display device after the assembly of the light-emitting element, but the embodiment is not limited thereto.

[0108] Referring to FIG. 6, a semiconductor light-emitting element (150) can be introduced into a chamber (1300) filled with a fluid (1200), and the semiconductor light-emitting element (150) can be moved to a substrate (200) by a magnetic field generated from an assembly device (1100). At this time, the light-emitting element (150) adjacent to the assembly hole (203) of the assembly substrate (200) can be assembled into the assembly hole (230) by the dielectrophoretic force caused by the electric field of the assembly electrodes. The fluid (1200) may be water, such as ultrapure water, but is not limited thereto. The chamber may be called a water tank, a container, a vessel, etc.

[0109] After the semiconductor light-emitting element (150) is introduced into the chamber (1300), an assembly substrate (200) may be placed on the chamber (1300). According to an embodiment, the assembly substrate (200) may be introduced into the chamber (1300).

[0110] Referring to FIG. 7, the semiconductor light-emitting element (150) can be implemented as a vertical semiconductor light-emitting element as illustrated, but is not limited thereto and a horizontal light-emitting element may be adopted.

[0111] The semiconductor light-emitting element (150) may include a magnetic layer (not shown) having a magnetic material. The magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light-emitting element (150) introduced into the fluid includes a magnetic layer, it can move to the substrate (200) by the magnetic field generated from the assembly device (1100). The magnetic layer may be placed on the upper side, the lower side, or both sides of the light-emitting element.

[0112] The semiconductor light-emitting device (150) may include a passivation layer (156) surrounding the top surface and side surface. The passivation layer (156) may be formed using an inorganic insulator such as silica or alumina through PECVD, LPCVD, sputtering deposition, etc. Additionally, the passivation layer (156) may be formed using an organic material such as photoresist or a polymer material through a spin coating method.

[0113] The above semiconductor light-emitting device (150) may include a first conductivity type semiconductor layer (152a), a second conductivity type semiconductor layer (152c), and an active layer (152b) disposed between them. The first conductivity type semiconductor layer (152a) may be an n-type semiconductor layer, and the second conductivity type semiconductor layer (152c) may be a p-type semiconductor layer, but is not limited thereto.

[0114] A first electrode may be connected to the first conductivity semiconductor layer (152a), and a second electrode may be connected to the second conductivity semiconductor layer (152c). To do this, a portion of the first conductivity semiconductor layer (152a) and the second conductivity semiconductor layer (152c) may be exposed to the outside. Accordingly, after the semiconductor light-emitting element (150) is assembled on the assembly substrate (200), a portion of the passivation layer (156) may be etched during the manufacturing process of the display device.

[0115] The assembly substrate (200) may include a pair of first assembly electrodes (201) and second assembly electrodes (202) corresponding to each semiconductor light-emitting element (150) to be assembled. The first assembly electrode (201) and the second assembly electrode (202) may be formed by stacking multiple single metals, metal alloys, metal oxides, etc. For example, the first assembly electrode (201) and the second assembly electrode (202) may be formed by including at least one of Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, but are not limited thereto. In addition, the first assembled electrode (201) and the second assembled electrode (202) may be formed by including at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, but are not limited thereto.

[0116] The first assembly electrode (201) and the second assembly electrode (202) can fix the semiconductor light-emitting element (150) inserted into the assembly hole (203) by means of dielectrophoretic force by emitting an electric field as an alternating voltage is applied. The gap between the first assembly electrode (201) and the second assembly electrode (202) may be smaller than the width of the semiconductor light-emitting element (150) and the width of the assembly hole (203), and the assembly position of the semiconductor light-emitting element (150) using an electric field can be fixed more precisely.

[0117] An insulating layer (212) is formed on the first assembly electrode (201) and the second assembly electrode (202) to protect the first assembly electrode (201) and the second assembly electrode (202) from fluid (1200) and to prevent leakage of current flowing through the first assembly electrode (201) and the second assembly electrode (202). For example, the insulating layer (212) may be formed as a single layer or a multilayer of an inorganic insulator such as silica or alumina or an organic insulator. The insulating layer (212) may have a minimum thickness to prevent damage to the first assembly electrode (201) and the second assembly electrode (202) during the assembly of the semiconductor light-emitting device (150), and may have a maximum thickness to ensure stable assembly of the semiconductor light-emitting device (150).

[0118] A partition wall (207) may be formed on the upper portion of the insulating layer (212). A portion of the partition wall (207) may be located on the upper portion of the first assembly electrode (201) and the second assembly electrode (202), and the remaining portion may be located on the upper portion of the assembly substrate (200).

[0119] Meanwhile, when manufacturing the assembly substrate (200), some of the partitions formed over the entire upper portion of the insulating layer (212) are removed, thereby forming an assembly hole (203) in which each of the semiconductor light-emitting elements (150) is combined and assembled on the assembly substrate (200).

[0120] An assembly hole (203) is formed in the assembly substrate (200) to which semiconductor light-emitting elements (150) are joined, and the surface on which the assembly hole (203) is formed can come into contact with a fluid (1200). The assembly hole (203) can guide the precise assembly position of the semiconductor light-emitting elements (150).

[0121] Meanwhile, the assembly hole (203) may have a shape and size corresponding to the shape of the semiconductor light-emitting element (150) to be assembled at the corresponding location. Accordingly, it is possible to prevent other semiconductor light-emitting elements from being assembled in the assembly hole (203) or multiple semiconductor light-emitting elements from being assembled.

[0123] Referring again to 6, after the assembly board (200) is placed in the chamber, an assembly device (1100) that applies a magnetic field can move along the assembly board (200). The assembly device (1100) may be a permanent magnet or an electromagnet.

[0124] The assembly device (1100) can move while in contact with the assembly substrate (200) to maximize the area where the magnetic field is applied within the fluid (1200). According to an embodiment, the assembly device (1100) may include a plurality of magnetic bodies or a magnetic body of a size corresponding to that of the assembly substrate (200). In this case, the movement distance of the assembly device (1100) may be limited to within a predetermined range.

[0125] The semiconductor light-emitting element (150) inside the chamber (1300) can move toward the assembly device (1100) and the assembly substrate (200) by means of a magnetic field generated by the assembly device (1100).

[0126] Referring to FIG. 7, the semiconductor light-emitting element (150) can be fixed by entering the assembly hole (203) by the dielectrophoretic force (DEP force) formed by the electric field of the assembly electrode of the assembly substrate while moving toward the assembly device (1100).

[0127] Specifically, the assembly wiring (201, 202) forms an electric field by an alternating current power source, and a dielectrophoretic force can be formed between the assembly wiring (201, 202) by this electric field. By this dielectrophoretic force, a semiconductor light-emitting element (150) can be fixed to an assembly hole (203) on a substrate (200).

[0128] At this time, a predetermined solder layer (not shown) is formed between the light-emitting element (150) assembled on the assembly hole (203) of the substrate (200) and the assembly electrode, thereby improving the bonding strength of the light-emitting element (150).

[0129] Additionally, a molding layer (not shown) may be formed in the assembly hole (203) of the assembly substrate (200) after assembly. The molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0131] By using the self-assembly method utilizing the aforementioned electromagnetic field, the time required for each semiconductor light-emitting element to be assembled onto a substrate can be drastically reduced, thereby enabling the realization of large-area high-pixel displays more quickly and economically.

[0133] Next, FIG. 8a is an assembly substrate structure according to an embodiment, and FIG. 8b is an example of a semiconductor light-emitting device placed on the assembly substrate structure according to FIG. 8a. Also, FIG. 8c is an example of an assembly hole shown in FIG. 8a.

[0134] In the embodiment, the assembly hole of the substrate may have a shape and size corresponding to the shape of the semiconductor light-emitting element to be assembled at the corresponding location. Accordingly, it is possible to prevent another semiconductor light-emitting element from being assembled in the assembly hole or to prevent multiple semiconductor light-emitting elements from being assembled.

[0135] In addition, according to undisclosed internal technology, the simultaneous assembly of the R micro LED chip, G micro LED chip, and B LED chip using dielectrophoresis is being studied.

[0136] However, research is being conducted on chip shape exclusivity by varying the horizontal cross-sectional shapes of R, G, and B LED chips so that they can be accurately assembled into their respective assembly holes.

[0137] For example, referring to FIG. 8a, the assembly substrate structure (200A1) according to the embodiment may include a plurality of first assembly electrodes (201) and second assembly electrodes (202) spaced apart from each other.

[0138] Additionally, the embodiment may include a partition (207) disposed on each of the assembled electrodes (201, 202).

[0139] The above partition (207) may include a first assembly hole (203a), a second assembly hole (203b), and a third assembly hole (203c), with a portion removed to account for the shape of the light-emitting element to be assembled. An insulating layer (212) may be exposed through the first assembly hole (203a), the second assembly hole (203b), and the third assembly hole (203c).

[0140] The horizontal cross-section of the first assembly hole (203a) may be circular, and the horizontal cross-sections of the second assembly hole (203b) and the third assembly hole (203c) may be elliptical.

[0141] Referring to FIG. 8b, a first semiconductor light-emitting element (150R), a second semiconductor light-emitting element (150G), and a third semiconductor light-emitting element (150B) can be assembled in each of the first assembly hole (203a), the second assembly hole (203b), and the third assembly hole (203c). The first semiconductor light-emitting element (150R) may be an R LED chip, the second semiconductor light-emitting element (150G) may be a G LED chip, and the third semiconductor light-emitting element (150B) may be a B LED chip.

[0142] The horizontal cross-section of the first assembly hole (203a) may be circular, and the horizontal cross-sections of the second assembly hole (203b) and the third assembly hole (203c) may be elliptical.

[0143] Specifically, referring to FIG. 8c, the first assembly hole (203a) may have a first width (a1) in a first direction based on a first axis (1st) and a first width (b1) in a second direction based on a second axis (2nd) perpendicular to the first axis, and the first width (a1) in the first direction and the first width (b1) in the second direction may be the same, but are not limited thereto.

[0144] Next, the second assembly hole (203b) may have a second width (a2) in the first direction and a second width (b2) in the second direction, and the third assembly hole (203c) may have a third width (a3) ​​in the first direction and a third width (b3) in the second direction.

[0145] For example, the first assembly hole (203a) may include a circular cross-section in which the first width (a1) in the first direction and the first width (b1) in the second direction are each 38 μm.

[0146] At this time, the second assembly hole (203b) and the third assembly hole (203c) may have a predetermined exclusive interval relative to the first assembly hole (203a). For example, the second assembly hole (203b) and the third assembly hole (203c) may have an exclusive interval relative to the first assembly hole (203a), such that the width of the major axis, e.g., the first direction, increases, and the width of the minor axis, e.g., the second direction, decreases. The exclusive interval may be approximately 5㎛ to 10㎛, but is not limited thereto.

[0147] For example, if the first assembly hole (203a) has a circular cross-section in which the first width (a1) in the first direction and the first width (b1) in the second direction are each 38 μm and the exclusion gap is 7 μm, the second width (a2) in the first direction of the second assembly hole (203b) may be 45 μm and the second width (b2) in the second direction may be 31 μm.

[0148] In addition, the third width (a3) ​​in the first direction of the third assembly hole (203c) may be 52 μm and the third width (b3) in the second direction may be 24 μm, but is not limited thereto.

[0150] Meanwhile, to enable LED assembly inside the assembly hole, spaced-apart assembly electrodes are formed inside the assembly hole, and each assembly electrode is positioned to overlap with the LED chip, thereby forming an electric field between two opposing assembly electrodes and assembling the micro LED through dielectrophoretic force.

[0151] However, according to internal research, even though the shapes of the R, G, and B LED chips are mutually exclusive, the applied DEP force is similar or does not differ significantly, so a screen effect occurs where other R LED chips or G LED chips block the entrance of the assembly hole for the B LED chip, causing a problem of reduced DEP selectivity that prevents the LED chip from being properly assembled.

[0152] Meanwhile, the DEP force applied to the LED is greatest when it is closest to the assembly electrode and is proportional to the area overlapping with the assembly electrode.

[0153] Specifically, FIGS. 9a to 9c are schematic diagrams showing the degree of rotation of a semiconductor light-emitting element to the standard assembly level on an assembly hole.

[0154] Figures 10a and 10b show DEP force data according to the rotation angle of the semiconductor light-emitting element in the assembly hole.

[0155] First, referring to FIG. 9a, this is a schematic diagram of a case where a third semiconductor light-emitting element (150B) and a first semiconductor light-emitting element (150R) are each positioned on an elliptical third assembly hole (203c), and the third semiconductor light-emitting element (150B) is positioned in a position that is properly assembled relative to the third assembly hole (203c).

[0156] That is, (1) in FIG. 9a is the case where the first axis (1st) of the third assembly hole (203c) and the long axis (Ct) of the third semiconductor light-emitting element (150B) coincide.

[0157] Meanwhile, (1) of FIG. 9a is in a state where the first semiconductor light-emitting element (150R) with a circular cross-section is positioned on the third assembly hole (203c) with an elliptical cross-section.

[0158] Next, referring to FIG. 9b, this is a schematic diagram of a case where a third semiconductor light-emitting element (150B) and a first semiconductor light-emitting element (150R) are positioned on an elliptical third assembly hole (203c) in a state rotated at a predetermined angle.

[0159] For example, the third semiconductor light-emitting element (150B) is positioned rotated approximately 30° relative to the third assembly hole (203c). That is, a rotation of the first angle (θ1) occurs between the first axis (1st) of the third assembly hole (203c) and the major axis (Ct) of the third semiconductor light-emitting element (150B) (see (1) in FIG. 9b).

[0160] Meanwhile, since the first semiconductor light-emitting element (150R) with a circular cross-section is circular, it remains in a substantially the same state as (2) in FIG. 9a even when rotated (see (2) in FIG. 9b).

[0161] Next, referring to FIG. 9c, the elliptical third semiconductor light-emitting element (150B) is positioned rotated approximately 45° relative to the third assembly hole (203c). That is, a rotation of a second angle (θ2) occurs between the first axis (1st) of the third assembly hole (203c) and the major axis (Ct) of the third semiconductor light-emitting element (150B) (see (1) in FIG. 9c).

[0162] In addition, the first semiconductor light-emitting element (150R) with a circular cross section remains substantially the same as the state of (2) in FIG. 9a even when rotated (see (2) in FIG. 9c).

[0164] Meanwhile, the DEP force applied to the LED increases as it approaches the assembly electrode, and is particularly proportional to the amount of overlapping area between the assembly electrode and the LED.

[0165] At this time, FIG. 10a is DEP force data according to the rotation angle of the third semiconductor light-emitting element (150B) and the first semiconductor light-emitting element (150R) in the third assembly hole (203c).

[0166] FIG. 10b is DEP force data according to the rotation angle of the third semiconductor light-emitting element (150B) and the first semiconductor light-emitting element (150R) in the second assembly hole (203b).

[0167] Referring to FIG. 10a and FIG. 10b, when the elliptical third semiconductor light-emitting element (150B) and the second semiconductor light-emitting element (150G) are rotated around the center, the overlapping area with the assembly electrode is reduced, so the DEP force of the elliptical LED becomes smaller. On the other hand, the circular first semiconductor light-emitting element (150R) has a circular cross-section even when rotated, so there is no change in the overlapping area with the assembly electrode, and thus the DEP force does not decrease.

[0168] In the assembly structure based on internal technology, the gap between the first assembly electrode (201) and the second assembly electrode (202) of the R, G, B LED is the same. Because the gap between the assembly electrodes is the same, there is a problem of hindering the assembly of the elliptical LED chip by screening it, as the DEP force on the circular LED chip is greater than in the position where the elliptical LED chip is assembled without rotation.

[0169] Specifically, referring to FIG. 10a, the DEP force for the elliptical third semiconductor light-emitting element (150B) located on the third assembly hole (203c) is greater than the DEP force for the circular first semiconductor light-emitting element (150R) located on the third assembly hole (203c) up to a rotation angle (θ) of about 15°. However, at a rotation angle of about 30° or more, the DEP force for the circular first semiconductor light-emitting element (150R) becomes greater.

[0170] Also, referring to FIG. 10b, the DEP force for the elliptical second semiconductor light-emitting element (150G) located on the second assembly hole (203b) is greater than the DEP force for the circular first semiconductor light-emitting element (150R) located on the second assembly hole (203b) up to a rotation angle (θ) of about 15°. Likewise, from a rotation angle of about 30° or more, the DEP force for the circular first semiconductor light-emitting element (150R) becomes greater.

[0172] Specifically, FIG. 11a is a plan view in which a circular first semiconductor light-emitting element (150R) is positioned on the third assembly hole (203c), and FIG. 11b is a cross-sectional view along the line C1-C2 in FIG. 11a.

[0173] Additionally, FIG. 12a is a plan view in which a first semiconductor light-emitting element (150R) is fitted onto a third assembly hole (203c), and FIG. 12b is a cross-sectional view along the line C1-C2 in FIG. 12a.

[0174] As shown in FIG. 10a and FIG. 10b above, even if the shapes of the R, G, and B LED chips are mutually exclusive, the applied DEP force may be similar or not significantly different, or when rotation occurs of the elliptical second semiconductor light-emitting element (150G) or the third semiconductor light-emitting element (150B), the DEP force applied to them may be smaller than the DEP force applied to the circular first semiconductor light-emitting element (150R). Accordingly, as shown in FIG. 11a and FIG. 11b, a screen or block effect occurs in which the first semiconductor light-emitting element (150R) blocks the entrance of the third assembly hole (203c) or the first semiconductor light-emitting element (150R) is partially fitted into the third assembly hole (203c), causing a problem of reduced DEP selectivity that prevents the elliptical second and third semiconductor light-emitting elements from being assembled.

[0175] However, there is a technical contradiction in that when the horizontal cross-sectional shape difference of the R, G, and B LED chips is increased to enhance exclusivity and thereby increase the DEP force deviation in the corresponding assembly holes, the assembling probability of the chips being seated in the elliptical assembly holes decreases due to the elliptical shape of the LED chips.

[0177] One of the technical objectives of the embodiment is to provide an assembly substrate for a semiconductor light-emitting device and a display device including the same, which can increase the assembly probability while increasing the DEP selectivity for color-specific LED chips in a self-assembly method using dielectrophoresis (DEP).

[0178] The specific features of an embodiment for solving the technical problem of the invention of this application will be described in detail below with reference to the drawings.

[0179] FIG. 13a is a new superimposed assembly substrate structure (200N) for assembling the first to third semiconductor light-emitting elements (150R, 150G, 150B) of the embodiment, and FIG. 13b is a diagram showing the first to third semiconductor light-emitting elements (150R, 150G, 150B) assembled on the superimposed assembly substrate structure (200N) of the embodiment.

[0180] The overlapping assembly substrate structure (200N) of the embodiment may include a plurality of assembly substrate structures, and at least one assembly substrate structure may include an overlapping assembly hole.

[0181] Referring to FIG. 13a, the superimposed assembly substrate structure (200N) of the embodiment may include a first assembly substrate structure (N1), a second assembly substrate structure (N2), and a third assembly substrate structure (N3).

[0182] The first assembly substrate structure (N1) may include a first electrode (201a) and a second electrode (202a). The vertical distance between the first electrode (201a) and the second electrode (202a) may be a first distance (D1).

[0183] The above first assembly substrate structure (N1) may include a first partition (207) having a circular first assembly hole (203a). For example, the first assembly hole (203a) may have a first width (a1) in a first direction and a first width (b1) in a second direction.

[0184] Next, the second assembly substrate structure (N2) may include a third electrode (201b) and a fourth electrode (202b). The vertical distance between the third electrode (201b) and the fourth electrode (202b) may be a second distance (D2). The second distance (D2) may be greater than the first distance (D1).

[0185] The above second assembly substrate structure (N2) may include a second partition (207) having an elliptical second assembly hole (203b).

[0186] At this time, the elliptical second assembly hole (203b) may include overlapping assembly holes. For example, the second assembly hole (203b) may include a second-1 assembly hole (203b1) and a second-2 assembly hole (203b2). The second-1 assembly hole (203b1) may overlap with the second-2 assembly hole (203b2) at least in part. Each of the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) may have a first-2 width (a2) in the direction of the major axis (Ct1) and a second-2 width (b2) in the direction of the minor axis (Ct2) (see FIG. 14c).

[0187] Referring further to FIG. 13a, the third assembly substrate structure (N3) may include a fifth electrode (201c) and a sixth electrode (202c). The vertical distance between the fifth electrode (201c) and the sixth electrode (202c) may be a third distance (D3). The third distance (D3) may be greater than the second distance (D2).

[0188] The above third assembly substrate structure (N3) may include a third partition (207) having an elliptical third assembly hole (203c). The elliptical third assembly hole (203c) may include an overlapping assembly hole.

[0189] For example, the third assembly hole (203c) may include a third-1 assembly hole (203c1) and a third-2 assembly hole (203c2). The third-1 assembly hole (203c1) may overlap at least partially with the third-2 assembly hole (203c2). Each of the third-1 assembly hole (203c1) and the third-2 assembly hole (203c2) may have a first-3 width (not shown) in the long axis direction and a second-3 width (not shown) in the short axis direction.

[0190] At this time, the first width (a1) in the first direction and the first width (b1) in the second direction of the first assembly hole (203a) may each be a circular cross-section of 38 μm. Additionally, when the exclusion gap is about 7 μm, the second width (a2) in the first direction of the second assembly hole (203b) may be about 45 μm and the second width (b2) in the second direction may be about 31 μm, and the third width in the first direction of the third assembly hole (203c) may be about 52 μm and the third width (b3) in the second direction may be about 24 μm, but is not limited thereto.

[0192] Next, FIGS. 14a to 14d are manufacturing process diagrams for a second assembly substrate structure (N2) in a superimposed assembly substrate structure (200N) of the embodiment shown in FIG. 13a.

[0193] Referring to FIG. 14a, the second assembly substrate structure (N2) includes a third electrode (201b) and a fourth electrode (202b) on a predetermined substrate, wherein the third electrode (201b) may include a third electrode body (201b0) and a third-1 protruding electrode (201b1) and a third-2 protruding electrode (201b2) protruding in the direction of the fourth electrode (202b). The surfaces of the third-1 protruding electrode (201b1) and the third-2 protruding electrode (201b2) may be flat, but are not limited thereto.

[0194] Additionally, the fourth electrode (202b) may include a fourth electrode body (202b0) and a fourth-1 protruding electrode (202b1) and a fourth-2 protruding electrode (202b2) that protrude in the direction of the third electrode (201b). The surfaces of the fourth-1 protruding electrode (202b1) and the fourth-2 protruding electrode (202b2) may be flat, but are not limited thereto.

[0195] The surface of the 3-1 protruding electrode (201b1) and the surface of the 4-1 protruding electrode (202b1) may face each other, and the flat surfaces may be parallel to each other.

[0196] The surface of the third-2 protruding electrode (201b2) and the surface of the fourth-2 protruding electrode (202b2) may face each other, and the flat surfaces may be parallel to each other.

[0197] The second distance (D2) between the third electrode (201b) and the fourth electrode (202b) may be the distance between the surface of the third-1 protruding electrode (201b1) and the surface of the fourth-1 protruding electrode (202b1).

[0198] Additionally, the second distance (D2) between the third electrode (201b) and the fourth electrode (202b) may be the distance between the surface of the third-2 protruding electrode (201b2) and the surface of the fourth-2 protruding electrode (202b2), but is not limited thereto.

[0200] Afterward, as shown in FIG. 14b, an insulating layer (not shown) can be formed on the third electrode (201b) and the fourth electrode (202b), and then a predetermined partition (207) material can be formed.

[0201] Next, as shown in FIG. 14c, a portion of the partition wall (207) can be removed to form an elliptical second-1 assembly hole (203b1), and as shown in FIG. 14d, a second-2 assembly hole (203b2) can be formed to form a second assembly hole (203b). The second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) may be formed sequentially or simultaneously.

[0202] Referring again to FIG. 14c, the first axis (1 of a predetermined substrate st The direction and the major axis (Ct1) of the second-1 assembly hole (203b1) may be inclined at a predetermined first angle (Θ1).

[0203] The first angle (Θ1) above may be approximately 1° to 60°, but is not limited thereto.

[0204] For example, the first angle (Θ1) may be approximately 5° to 60°, but is not limited thereto. Also, the first angle (Θ1) may be approximately 10° to 50°, but is not limited thereto. Also, the first angle (Θ1) may be approximately 15° to 45°, but is not limited thereto.

[0205] In the embodiment, even if the second semiconductor light-emitting element (150G) placed in the second assembly hole (203b) is rotated and placed at a first angle, the active layer is located at the center between the assembly electrodes, so there is no problem with lighting.

[0206] Additionally, the above 2-1 assembly hole (203b1) may have a 2-1 width (a2) based on the long axis (Ct1) and a 2-2 width (b2) based on the short axis (Ct2) perpendicular to the long axis (Ct1).

[0207] For example, in 13a, the first direction first width (a1) and the second direction first width (b1) of the first assembly hole (203a) may each be a circular cross-section of 38 μm.

[0208] In this case, in FIG. 14c, the width of the second-1 assembly hole (203b1) may be approximately 45 μm based on the long axis (Ct1) and the width of the second-2 assembly hole (203b1) may be approximately 31 μm based on the short axis (Ct2), but is not limited thereto.

[0209] Also, referring to FIG. 14d, the width and the width based on the major axis of the second-2 assembly hole (203b2) may be equal to the second-1 width (a2) and second-2 width (b2) of the second-1 assembly hole (203b1), respectively, but are not limited thereto.

[0211] Next, FIG. 15a is a schematic diagram showing that a second semiconductor light-emitting element (150G) is assembled on the second assembly substrate structure (N2) shown in FIG. 13a.

[0212] Referring to FIG. 15a, a second semiconductor light-emitting element (150G) can be assembled within a second assembly hole (203b) of a second assembly substrate structure (N2), and the area where the second semiconductor light-emitting element (150G), the third electrode (201b), and the fourth electrode (202b) overlap can secure the area of ​​the second region (R2).

[0213] Meanwhile, FIG. 15b is a comparative schematic diagram (N2R) in which a circular first semiconductor light-emitting element (150R) is positioned on the second assembly substrate structure (N2) shown in FIG. 13a.

[0214] Specifically, FIG. 15b is a schematic diagram showing a circular first semiconductor light-emitting element (150R) passing over and briefly positioned on the second assembly hole (203b) of the second assembly substrate structure (N2).

[0215] At this time, the area where the circular first semiconductor light-emitting element (150R) overlaps with the third electrode (201b) and the fourth electrode (202b) may have the area of ​​the first area (R1).

[0216] The area of ​​the second region (R2) in FIG. 15a, where the elliptical second semiconductor light-emitting element (150G) overlaps with the third electrode (201b) and the fourth electrode (202b), is significantly larger than the area of ​​the first region (R1) in which the circular first semiconductor light-emitting element (150R) overlaps with the third electrode (201b) and the fourth electrode (202b).

[0217] Accordingly, the DEP force applied to the second semiconductor light-emitting element (150G) is significantly greater than that of the first semiconductor light-emitting element (150R).

[0218] Specifically, FIG. 16 is DEP force data according to the rotation angle of a semiconductor light-emitting element in an assembly hole of a superimposed assembly substrate structure according to an embodiment.

[0219] FIG. 16 is DEP force data on the surface of an assembly hole according to the rotation angle (Θ) of each semiconductor light-emitting element when an elliptical second semiconductor light-emitting element (150G) is positioned in the second assembly hole (203b) of a second assembly substrate structure (N2) according to an embodiment (see FIG. 15a) and when a circular first semiconductor light-emitting element (150R) is positioned in the same way (see FIG. 15b).

[0220] In addition, the DEP force data on the assembly hole surface according to the rotation angle (Θ) of the semiconductor light-emitting element shown in FIG. 16 can be similarly applied when an elliptical third semiconductor light-emitting element (150B) is positioned in the third assembly hole (203c) of the third assembly substrate structure (N3) according to the embodiment and when a circular first semiconductor light-emitting element (150R) is positioned in the same way.

[0221] As shown in FIG. 15a and FIG. 14c, the second assembly hole (203b) including the second-1 assembly hole (203b1) or the second-2 assembly hole (203b2) in the second assembly substrate structure (N2) according to the embodiment is the first axis (1 st The major axis (Ct1) of each assembly hole may be inclined at a predetermined angle compared to the direction.

[0222] Referring to the DEP force data of FIG. 16, the long axis (Ct1) of the second assembly hole (203b) in the second assembly substrate structure (N2) according to the embodiment is the first axis (1 st There is a special technical effect in which the DEP force exerted on the second semiconductor light-emitting element (150G) increases as the angle rotated relative to the direction increases up to a certain range.

[0223] For example, as the rotation angle (Θ) increases from about 1° to 30°, there is a special technical effect in which the DEP force applied to the second semiconductor light-emitting element (150G) increases.

[0224] In addition, when the rotation angle (Θ) is in the range of about 1° to 45°, the DEP force exerted on the second semiconductor light-emitting element (150G) is more than twice as large as the DEP force exerted on the circular first semiconductor light-emitting element (150R). For example, when the rotation angle (Θ) is in the range of about 1° to 45°, there is a special technical effect in that the DEP force exerted on the second semiconductor light-emitting element (150G) is about 2.5 to 4 times larger than the DEP force exerted on the circular first semiconductor light-emitting element (150R).

[0225] According to the embodiment, since the DEP force of the second semiconductor light-emitting element (150G) corresponding to the second assembly hole (203b) is significantly greater than twice the DEP force exerted on the first semiconductor light-emitting element (150R), there is a special technical effect that can significantly reduce the interference of the first semiconductor light-emitting element (150R) not corresponding to the assembly hole during assembly.

[0226] In addition, according to the embodiment, the screen problem of the circular LED can be solved by increasing the difference in DEP force applied to the elliptical second semiconductor light-emitting element (150G) compared to the DEP force applied to the circular first semiconductor light-emitting element (150R).

[0228] Specifically, in the embodiment, the second assembly substrate structure (N2) is arranged in an overlapping form with the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) as shown in FIG. 15a, so that as the rotation angle increases, the overlapping portion between the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) decreases, thereby having the effect of expanding the area to be assembled.

[0229] Accordingly, according to the embodiment, not only is the DEP force applied to the second semiconductor light-emitting element (150G) increased, but there is also a special technical effect of increasing the probability of proper assembly by arranging the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2).

[0230] In addition, the embodiment has a combined technical effect in which the area of ​​the assembly region substantially contributed by the second-1 assembly hole (203b1) and the second-2 assembly hole (203b2) is expanded, and at the same time, the area of ​​the second region (R2) overlapping with the assembly electrode is also expanded, thereby increasing the probability of assembly and increasing the DEP force exerted on the second semiconductor light-emitting element (150G).

[0231] In addition, according to the embodiment, by overlapping the 2-1 assembly hole (203b1) and the 2-2 assembly hole (203b2) to increase the probability of correct assembly and increasing the DEP force applied to the 2 semiconductor light-emitting element (150G), there is a special technical effect that not only increases the probability of correct assembly but also significantly improves the speed of correct assembly.

[0232] Accordingly, the embodiment has the technical effect of simultaneously increasing the assembly probability while increasing the DEP selectivity for color-specific LED chips in a self-assembly method using dielectrophoresis (DEP).

[0234] Next, FIG. 17a is a schematic diagram showing that a third semiconductor light-emitting element (150B) is assembled on the third assembly substrate structure (N3) shown in FIG. 13a.

[0235] Referring to FIG. 17a, a third semiconductor light-emitting element (150B) can be assembled within the third assembly hole (203c) of the third assembly substrate structure (N3), and the area where the third semiconductor light-emitting element (150B), the fifth electrode (201c), and the fifth electrode (201c) overlap can secure the area of ​​the third region (R3).

[0236] Meanwhile, FIG. 17b is a comparative schematic diagram (N3R) in which a second semiconductor light-emitting element (150G) is positioned on the third assembly substrate structure (N3) shown in FIG. 13a. For example, FIG. 17b is a schematic diagram in which the second semiconductor light-emitting element (150G) passes over and is briefly positioned on the third assembly hole (203c) of the third assembly substrate structure (N3). At this time, the area of ​​the second semiconductor light-emitting element (150G) that overlaps with the fifth electrode (201c) and the sixth electrode (202c) may have the area of ​​the third-2 region (R3a).

[0237] The area of ​​the third region (R3) in FIG. 17a, where the elliptical third semiconductor light-emitting element (150B) overlaps with the fifth electrode (201c) and the sixth electrode (202c), is significantly larger than the area of ​​the third-2 region (R3a), where the elliptical second semiconductor light-emitting element (150G) overlaps with the fifth electrode (201c) and the sixth electrode (202c). Accordingly, the DEP force applied to the third semiconductor light-emitting element (150B) by the fifth electrode (201c) and the sixth electrode (202c) is significantly larger than that of the second semiconductor light-emitting element (150G). Of course, the DEP force applied to the third semiconductor light-emitting element (150B) by the fifth electrode (201c) and the sixth electrode (202c) is significantly larger than that of the circular first semiconductor light-emitting element (150R).

[0238] Accordingly, since the DEP force of the third semiconductor light-emitting element (150B) corresponding to the third assembly hole (203c) including the overlapping assembly hole is significantly greater than the DEP force applied to the second semiconductor light-emitting element (150G) or the first semiconductor light-emitting element (150R), there is a special technical effect of significantly reducing the influence of the second semiconductor light-emitting element (150G) or the first semiconductor light-emitting element (150R) not corresponding to the third assembly hole (203c) interfering with the assembly.

[0240] Next, FIGS. 18a and FIGS. 18b are a second-2 assembled substrate structure (N2b) according to an embodiment.

[0241] The second-2 assembly substrate structure (N2b) according to the embodiment includes a third electrode (201b) and a fourth electrode (202b) on a predetermined substrate, and the third electrode (201b) may include a third electrode body (201b0) and a third-1 protruding electrode (201b1) and a third-2 protruding electrode (201b2) protruding in the direction of the fourth electrode (202b).

[0242] The surfaces of the third-1 protruding electrode (201b1) and the third-2 protruding electrode (201b2) may include a first curvature recess (r1) and a third curvature recess (r3) that are concave in the direction of the fourth electrode (202b).

[0243] The surfaces of the 4-1 protruding electrode (202b1) and the 4-2 protruding electrode (202b2) may include a second curvature recess (r2) and a fourth curvature recess (r4) that are concave in the direction of the third electrode (201b).

[0244] The distance between the third electrode (201b) and the fourth electrode (202b) may be a second-2 distance (D2a), and may be longer than the second distance (D2), which is the distance between the third electrode (201b) and the fourth electrode (202b) having a flat surface (see FIG. 15a).

[0245] Afterward, as shown in FIG. 18b, a partition wall (207) can be formed and patterned to form a second assembly hole (203b) including a second-1 assembly hole (203b1) and a second-2 assembly hole (203b2) that overlap at least partially.

[0246] According to the second-2 assembly substrate structure (N2b) according to the embodiment, by providing concave recesses on the surfaces of the third electrode (201b) and the fourth electrode (202b), the area in which the circular first semiconductor light-emitting element (150R) can overlap with the third electrode (201b) and the fourth electrode (202b) can be further reduced.

[0247] Through this, even if a circular first semiconductor light-emitting element (150R) is temporarily positioned on the second-2 assembly substrate structure (N2b) according to the embodiment, the DEP force thereon is significantly weak, so there is a special technical effect that can significantly reduce the possibility of the first semiconductor light-emitting element (150R) interfering with the assembly of the second semiconductor light-emitting element (150G).

[0249] Next, FIG. 19a and FIG. 19b are the second-third assembly substrate structure (N2c) according to the embodiment.

[0250] Referring to FIG. 19a, the second-third assembly substrate structure (N2c) according to the embodiment includes a third electrode (201b) and a fourth electrode (202b) on a predetermined substrate, and the third electrode (201b) may include a third electrode body (201b0) and a third-first protruding electrode (201b1), a third-second protruding electrode (201b2), and a third-third protruding electrode (201b3) protruding in the direction of the fourth electrode (202b).

[0251] The surfaces of the above-mentioned third-1 protruding electrode (201b1), third-2 protruding electrode (201b2), and third-3 protruding electrode (201b3) may be flat in the direction of the fourth electrode (202b), but are not limited thereto and may also have concave surfaces.

[0252] Additionally, in the second-third assembly substrate structure (N2c), the fourth electrode (202b) may include a fourth electrode body (202b0) and a fourth-first protruding electrode (202b1), a fourth-second protruding electrode (202b2), and a fourth-third protruding electrode (202b3) that protrude in the direction of the third electrode (201b).

[0253] The surfaces of the 4-1 protruding electrode (202b1), 4-2 protruding electrode (202b2), and 4-3 protruding electrode (202b3) may be flat in the direction of the 3rd electrode (201b), but are not limited thereto and may have concave surfaces.

[0254] The distance between the third electrode (201b) and the fourth electrode (202b) may be the second-third distance (D2c).

[0255] Next, referring to FIG. 19b, the second-third assembly substrate structure (N2c) according to the embodiment may include a second assembly hole (203b) formed by patterning a predetermined partition wall (207). The second assembly hole (203b) may include a second-first assembly hole (203b1), a second-second assembly hole (203b2), and a second-third assembly hole (203b3).

[0256] The above 2-1 assembly hole (203b1) may be located on the 3-2 protruding electrode (201b2) and the 4-1 protruding electrode (202b1). The above 2-2 assembly hole (203b2) may be located on the 3-1 protruding electrode (201b1) and the 4-2 protruding electrode (202b2). The above 2-3 assembly hole (203b3) may be located on the 3-3 protruding electrode (201b3) and the 4-3 protruding electrode (202b3).

[0257] The above 2-1 assembly hole (203b1), 2-2 assembly hole (203b2) and 2-3 assembly hole (203b3) may overlap at least partially with each other.

[0258] According to the second-third assembly substrate structure (N2c) according to the embodiment, there is a technical effect of further increasing the probability of assembling an elliptical semiconductor light-emitting element by including at least three assembly holes that partially overlap each other.

[0259] In addition, according to the second-third assembly substrate structure (N2c) according to the embodiment, at least three protruding electrodes are arranged to face each other on the third electrode (201b) and the fourth electrode (202b), so that the distance between the third electrode (201b) and the fourth electrode (202b) is designed to be equal to or greater than the diameter of the first circular semiconductor light-emitting element, thereby further reducing the area where the first circular semiconductor light-emitting element (150R) can overlap with the third electrode (201b) and the fourth electrode (202b).

[0260] Through this, even if a circular first semiconductor light-emitting element (150R) is temporarily positioned on the 232 assembly substrate structure (N2c) according to the embodiment, the DEP force on it is significantly weak, so the possibility of the first semiconductor light-emitting element (150R) interfering with the assembly of the second semiconductor light-emitting element (150G) can be significantly reduced, and at the same time, by including three mutually overlapping assembly holes, the probability of an elliptical semiconductor light-emitting element being assembled can be significantly increased, thus providing a complex technical effect.

[0261] The embodiment can be adopted in the field of displays that display images or information.

[0262] The embodiment can be adopted in the field of displays that display images or information using semiconductor light-emitting elements.

[0263] The embodiment can be adopted in the field of displaying images or information using micro- or nano-scale semiconductor light-emitting devices.

[0264] The foregoing detailed description should not be interpreted restrictively in all respects and should be considered exemplary. The scope of the embodiments should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalent scope of the embodiments are included within the scope of the embodiments.

Claims

Claim 1 An assembly substrate structure of a semiconductor light-emitting device, comprising a first assembly substrate structure and a second assembly substrate structure spaced apart on a substrate, wherein the first assembly substrate structure comprises a first electrode and a second electrode spaced apart by a first distance; and a first partition wall having a circular first assembly hole; and the second assembly substrate structure comprises a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance; and a second partition wall having an elliptical second assembly hole; wherein the second assembly hole comprises a second-1 assembly hole and a second-2 assembly hole that are at least partially overlapped with each other. Claim 2 delete Claim 3 An assembly substrate structure of a semiconductor light-emitting device according to claim 1, wherein the 2-1 assembly hole and the 2-2 assembly hole have a 1-2 width in the direction of the major axis which is the central axis and a 2-2 width in the direction of the minor axis perpendicular to the central axis. Claim 4 An assembly substrate structure of a semiconductor light-emitting device according to claim 3, further comprising a third assembly substrate structure disposed on one side of the second assembly substrate structure, wherein the third assembly substrate structure comprises a fifth electrode and a sixth electrode having a third distance that is greater than the second distance; and a third partition wall having an elliptical third assembly hole. Claim 5 An assembly substrate structure of a semiconductor light-emitting device according to claim 4, wherein the third assembly hole comprises a third-1 assembly hole and a third-2 assembly hole that overlap at least partially with each other. Claim 6 An assembly substrate structure for a semiconductor light-emitting device according to claim 5, wherein the 3-1 assembly hole and the 3-2 assembly hole have a 1-3 width in the direction of the major axis which is the central axis and a 2-3 width in the direction of the minor axis perpendicular to the central axis, and wherein the 1-3 width is larger than the 1-2 width and the 2-3 width is smaller than the 2-2 width. Claim 7 An assembly substrate structure of a semiconductor light-emitting device, wherein, in claim 1, the third electrode comprises a third protruding electrode protruding in the direction of the fourth electrode. Claim 8 An assembly substrate structure of a semiconductor light-emitting device, comprising a first assembly substrate structure and a second assembly substrate structure spaced apart on a substrate, wherein the first assembly substrate structure comprises a first electrode and a second electrode spaced apart by a first distance; and a first partition wall having a first assembly hole in a circular shape; and the second assembly substrate structure comprises a third electrode and a fourth electrode spaced apart by a second distance greater than the first distance; and a second partition wall having a second assembly hole in an elliptical shape; wherein the third electrode comprises a third electrode body; a third-1 protruding electrode protruding in the direction of the fourth electrode; and a third-2 protruding electrode protruding in the direction of the fourth electrode and disposed adjacent to the third-1 protruding electrode. Claim 9 An assembly substrate structure for a semiconductor light-emitting device, characterized in that, in claim 8, the surfaces of the 3-1 protruding electrode and the 3-2 protruding electrode are flat. Claim 10 In claim 8, the assembly substrate structure of a semiconductor light-emitting device comprises: a fourth electrode body; a fourth-1 protruding electrode and a fourth-2 protruding electrode that protrude in the direction of the third electrode and are arranged adjacently. Claim 11 In claim 10, the surfaces of the above-mentioned 4-1 protruding electrode and 4-2 protruding electrode are flat, forming an assembly substrate structure for a semiconductor light-emitting device. Claim 12 In claim 11, the flat surface of the 3-1 protruding electrode and the flat surface of the 4-1 protruding electrode are parallel to each other, forming an assembly substrate structure for a semiconductor light-emitting device. Claim 13 In claim 8, the surface of the 3-1 protruding electrode and the 3-2 protruding electrode in the second assembly substrate structure comprises a first curvature recess and a third curvature recess, respectively, which are concave in the direction of the fourth electrode, in the assembly substrate structure of a semiconductor light-emitting device. Claim 14 An assembly substrate structure of a semiconductor light-emitting device according to claim 10, wherein the surfaces of the 4-1 protruding electrode and the 4-2 protruding electrode each include a second curvature recess and a fourth curvature recess that are concave in the direction of the third electrode. Claim 15 In claim 8, the second assembly substrate structure further comprises a third-3 protruding electrode disposed between the third-1 protruding electrode and the third-2 protruding electrode, an assembly substrate structure of a semiconductor light-emitting device. Claim 16 A display device comprising an assembly substrate structure of a semiconductor light-emitting element of any one of claims 1 or 3 to 15.

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