Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process

KR103003634B1Active Publication Date: 2026-08-11SHIN ETSU CHEMICAL CO LTD
View PDF 2 Cites 0 Cited by

Patent Information

Application Number
KR1020240194634
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Priority Date
2023-12-26
Filing Date
2024-12-23
Publication Date
2026-08-11
Estimated Expiration
2044-12-23

Smart Images

  • Figure 112024143102810-PAT00045_ABST
    Figure 112024143102810-PAT00045_ABST
Patent Text Reader

Abstract

The present invention aims to provide a compound for forming a metal-containing film that can contribute to sensitivity improvement while maintaining the LWR of an upper layer resist, a composition for forming a metal-containing film that includes the same, and a pattern forming method using the composition. This is achieved by a compound for forming a metal-containing film, wherein the compound for forming a metal-containing film comprises at least one metal atom (a) selected from the group consisting of Ti, Zr, and Hf, and a polydentate ligand coordinated to the metal atom (a), and furthermore, the polydentate ligand is substituted with a fluorine atom and is derived from a compound (b) having 1 to 50 carbon atoms that comprises one or more crosslinkable groups selected from allyl, allyloxy, ethynyl, propargyl, propargyloxy, epoxy, oxetanyl, nitrile, and vinylidene groups.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Domino catalytic system producing branching polythene and use method of the same

    CN101130579A

  • Compound, semiconductor layer comprising compound and organic electronic device

    WO2023041778A2