Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing while mounting and heating a plurality of substrates in a circumferential direction. The present invention comprises: a lead portion (120) coupled to the upper side of a chamber body (110) which has an open upper side and has one or more lower cooling channels (118, 119) formed in the bottom wall and side wall, forming a sealed internal space (S), and having one or more upper cooling channels (128, 129); a substrate support portion (200) installed on the chamber body (110) such that a plurality of substrate mounting portions (211) are formed along the circumferential direction and rotate with the center of the lead portion (120) as the center of rotation; a ceiling portion (400) forming a separate process space (P) in the internal space (S); and a gas injection portion (500) installed in the central area of ​​the substrate support portion (200) to inject process gas from the central area of ​​the substrate support portion (200) toward the edge area. A substrate processing device is disclosed, characterized by comprising: a main heater unit (610) installed on the lower side of the substrate support unit (200) to heat the substrate support unit (200) in order to form a preset temperature condition for a substrate (10) seated on the substrate support unit (200); and a temperature control heater unit (700) installed between the lead unit (120) and the ceiling unit (400) to heat the ceiling unit (400).

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs substrate processing while mounting and heating a plurality of substrates in a circumferential direction. Background Technology

[0002] Generally, the Selective Epitaxial Growth (SEG) process, which is a selective single-crystal silicon thin film growth technology, is a technology that selectively grows silicon only on the exposed silicon substrate without growing silicon on the insulator.

[0003] To this end, a source gas for thin film deposition (e.g., DCS, MS, DS, GeH4, etc.) and an etching gas for etching (e.g., HCl, Cl2, etc.) are both injected into the process space and the process is performed.

[0004] However, in the case of a conventional substrate processing device for the SEG process, heating is performed only on the lower side of the substrate support, so the temperature on the upper side of the process chamber is lower than the temperature on the side of the substrate support where the substrate is supported in the space where the process takes place, resulting in uneven distribution of source gas or etching gas within the process space, and consequently, a decrease in process efficiency and a problem in which a thin film is deposited in the internal region of the process chamber where the temperature is relatively low.

[0005] When a thin film is deposited in the internal area of ​​the process chamber during the process, periodic cleaning of the process chamber is required. However, since the substrate processing process is interrupted during the cleaning of the process chamber, there is a problem of reduced productivity of the substrate processing device.

[0006] Meanwhile, the applicant has presented a substrate processing device such as Patent Document 1 to solve the above-mentioned problems.

[0007] The substrate processing device of Patent Document 1 performs substrate processing by rotating the substrate support while heating the substrate support on the upper and lower sides of the substrate support on which a plurality of substrates are placed.

[0008] Meanwhile, the substrate processing device of Patent Document 1 has a lower heating unit located below the substrate support, which can be configured with various pattern and distance conditions for uniform control of the substrate temperature on the substrate support, but the upper heating unit installed above the substrate support has many limitations in forming temperature conditions suitable for substrate processing on the upper side of the substrate support due to limitations in installation conditions such as optical measurement.

[0009] In addition, the upper side of the substrate support has a problem in that it cannot form temperature conditions suitable for substrate processing of the substrate mounted on the substrate support due to limitations in the installation conditions of the upper heating unit and the temperature drop of the lead and chamber body.

[0010] (Patent Document 1) KR 10-2020-0008348 A The problem to be solved

[0011] The objective of the present invention is to provide a substrate processing apparatus capable of forming temperature conditions suitable for substrate processing of a substrate mounted on a substrate support by additionally including a temperature control heater unit that controls the amount of heat generated in conjunction with cooling by the cooling channel, in order to solve the above-mentioned problems by forming a cooling channel in a process chamber and a lid. means of solving the problem

[0012] The present invention is created to achieve the above-described objectives of the present invention, and comprises: a chamber body (110) having one or more first gates (111) formed for the introduction and discharge of a substrate (10), with an open upper side, and having one or more lower cooling channels (118, 119) formed in at least one of a bottom wall and a side wall; a lead portion (120) coupled to the upper side of the chamber body (110) to form a sealed internal space (S) and having one or more upper cooling channels (128, 129) formed therein; a substrate support portion (200) installed on the chamber body (110) such that a plurality of substrate mounting portions (211) on which the substrate (10) is seated are formed along the circumferential direction and rotate with the center of the lead portion (120) as the center of rotation; and a side wall portion (300) forming a side wall along the perimeter of the substrate support portion (200). A ceiling portion (400) that is coupled to the central portion of the lead portion (120) so as to face the upper side of the substrate support portion (200) and is seated on the upper end of the side wall portion (300) to form a separate process space (P) in the internal space (S) together with the substrate support portion (200) and the side wall portion (300); a gas injection portion (500) installed in the central area of ​​the substrate support portion (200) to inject process gas from the central area of ​​the substrate support portion (200) toward the edge area; and a main heater portion (610) installed on the lower side of the substrate support portion (200) to heat the substrate support portion (200) in order to form a preset temperature condition for the substrate (10) seated on the substrate support portion (200); A substrate processing device is disclosed, characterized by including a temperature control heater unit (700) installed between the lead unit (120) and the ceiling unit (400) to heat the ceiling unit (400).

[0013] The above temperature control heater (700) can control the amount of heat generated to prevent a temperature drop caused by cooling of the lead portion (120) and the chamber body (110) in the central region of the substrate support portion (200) and near the edge region with respect to the substrate (10) mounted on the substrate support portion (200).

[0014] The temperature control heater unit (700) may include one or more first temperature control heater units (711) disposed in the central region of the substrate support unit (200), and one or more second temperature control heater units (712) disposed in the edge region of the substrate support unit (200) concentric with the first temperature control heater unit (711).

[0015] The first temperature control heater unit (711) is composed of a ring-shaped single-loop halogen heater, and the second temperature control heater unit (712) may be composed of a ring-shaped double-loop halogen heater.

[0016] The first temperature control heater (711) is positioned further inward than the edge of the substrate (10) mounted on the substrate support (200), and the second temperature control heater (712) can be positioned further outward than the edge of the substrate (10) mounted on the substrate support (200).

[0017] The first temperature control heater unit (711) and the second temperature control heater unit (712) can have their heat outputs controlled independently.

[0018] The lead portion (120) is provided with one or more viewport portions (810, 820) for optical measurement with respect to the internal space (S), and a second measurement portion (920) may be additionally installed to optically measure the temperature of the substrate (10) supported on the substrate support portion (200) through the viewport portions (810, 820) for controlling the amount of heat generated by the temperature control heater portion (700).

[0019] The above temperature control heater unit (700) may additionally include at least one third temperature control heater unit (713) located between the central region and the edge region of the substrate support unit (200) to heat the portion of the ceiling unit (400) corresponding to the substrate (10).

[0020] The above third temperature control heater unit (713) can have its heat output controlled independently. Effects of the invention

[0021] The substrate processing apparatus according to the present invention has the advantage of being able to form temperature conditions suitable for substrate processing of a substrate mounted on a substrate support by additionally including a temperature control heater unit in which a cooling channel is formed in the process chamber and the lead and the amount of heat generated is controlled in conjunction with the cooling of the chamber by the cooling channel.

[0022] Specifically, the substrate processing device according to the present invention applies a double chamber structure in which a separate process space is formed inside an outer chamber using a substrate support part, a side wall part, and a ceiling part made of graphite material, and the periphery of the process space is configured as a hot wall, and by installing a main heater part and a temperature control heater part on the lower side of the substrate support part and the upper side of the ceiling part, respectively, temperature conditions suitable for substrate processing of the substrate can be formed throughout the entire process space.

[0023] In particular, the conventional substrate processing device according to Patent Document 1 had a problem in that the upper side of the substrate support had a relatively large area exposed to the lead part and the chamber body, causing the temperature to drop relatively in the central and edge areas of the substrate support.

[0024] In this regard, the substrate processing device according to the present invention can form high temperature conditions suitable for substrate processing throughout the entire process space by controlling the heat generation amount of the temperature control heater unit in conjunction with the cooling of the cooling channel installed in the lead unit and the chamber body, thereby forming conditions in which gas sprayed from the central part can flow smoothly toward the edge.

[0025] Accordingly, during the substrate processing process, the process gas can be evenly distributed from the substrate support side to the ceiling side, and the formation of unnecessary thin films can be effectively prevented in the remaining parts excluding the necessary areas of the substrate, and as a result, there is an advantage of maintaining the cleaning cycle of the chamber as long as possible. Brief explanation of the drawing

[0026] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the present invention. FIG. 2 is an enlarged cross-sectional view of a part of the substrate processing apparatus of FIG. 1. Figure 3 is a plan view showing the plan of the substrate processing apparatus of Figure 1. FIG. 4a is an enlarged cross-sectional view of part A in FIG. 1. FIG. 4b is a plan view showing the upper surface of the first light guide part illustrated in FIG. 4a. Figure 5a is an enlarged cross-sectional view of part B in Figure 1. FIG. 5b is a plan view showing the upper surface of the second light guide part illustrated in FIG. 5a. FIG. 6 is a plan view showing an example of an upper heater section of the substrate processing device of FIG. 1. Figure 7 is a graph showing the change in temperature distribution of the substrate support part through temperature control of the temperature control heater part as a temperature condition for substrate processing by the substrate processing device of Figure 1. Specific details for implementing the invention

[0027] The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

[0028] The substrate processing apparatus according to the present invention forms a sealed internal space (S) and performs substrate processing such as deposition.

[0029] In particular, the substrate processing apparatus according to the present invention is useful for the Selective Epitaxial Growth (SEG) process for selective silicon thin film growth, in which silicon is selectively grown only on the exposed portion of the silicon substrate without silicon growing on the insulator.

[0030] For example, as shown in FIGS. 1 and 2, a substrate processing device according to the present invention comprises: a chamber body (110) having an open upper side; a lead portion (120) coupled to the upper side of the chamber body (110) to form a sealed internal space (S); a substrate support portion (200) installed in the chamber body (110) such that a plurality of substrate mounting portions (211) on which a substrate (10) is placed are formed along the circumferential direction and rotate with the center of the lead portion (120) as the center of rotation; a ceiling portion (400) forming a separate process space (P) in the internal space (S); and a gas injection portion (500) installed in the central area of ​​the substrate support portion (200) to inject process gas from the central area of ​​the substrate support portion (200) toward the edge area. It includes a main heater (610) installed on the lower side of the substrate support (200) to heat the substrate support (200) in order to form a preset temperature condition for the substrate (10) placed on the substrate support (200).

[0031] The above chamber body (110) and lead part (120) can be configured in various ways to form a sealed internal space (S).

[0032] The above chamber body (110) may have an opening formed on its upper side, and the lead portion (120) may be configured to be detachably coupled to the opening of the chamber body (110) to form a sealed internal space (S) together with the chamber body (110).

[0033] And the chamber body (110) may have one or more gates (111) formed on its side for introducing and discharging a substrate (10).

[0034] The above chamber body (110) and lead part (120) may be connected to or installed with a power supply system for performing substrate processing, an exhaust system for controlling pressure and exhausting the internal space (S), etc.

[0035] The above chamber body (110) and lead part (120) may have various materials depending on the design, process conditions, etc., and, for example, may be made of aluminum or aluminum alloy.

[0036] Meanwhile, the chamber body (110) and the lead part (120) may have one or more cooling channels (118, 119, 128, 129) formed therein to prevent a temperature rise caused by heating of the main heater part (610) described later. Here, various refrigerants may flow through the cooling channels (118, 119, 128, 129), and for example, water may flow through them.

[0037] Specifically, the chamber body (110) may have at least one lower cooling channel (118, 119) formed in at least one of the bottom wall and the side wall.

[0038] The lower cooling channel (118, 119) is formed in at least one of the bottom wall and the side wall and is a channel for preventing a temperature rise caused by heating of the main heater unit (610) described later, and can be configured in various ways considering the heating area by the main heater unit (610).

[0039] For example, the lower cooling channels (118, 119) may include a first lower cooling channel (119) formed on the bottom wall of the chamber (110) and a second lower cooling channel (118) formed on the side wall of the chamber (110).

[0040] The above-mentioned first lower cooling channel (119) is a cooling channel formed on the bottom wall of the chamber (110), and can be sealed by forming the channel by machining on the bottom surface of the bottom wall of the chamber (110) and then joining a sealing member by welding or the like.

[0041] And the first lower cooling channel (119) can be formed on the front and rear sides relative to the exhaust port (870), as shown in FIGS. 1 and 2.

[0042] Meanwhile, considering that the chamber body (110) is circular when viewed from above, the first lower cooling channel (119) may be formed in a circular shape in the edge area of ​​the chamber body (110).

[0043] And the horizontal position of the first lower cooling channel (119) can be positioned on the inner and outer sides of the edge of the substrate support (200), or across, as shown in FIGS. 1 and 2.

[0044] The above second lower cooling channel (118) is a channel formed on the side wall of the chamber (110) and can be formed by various methods such as machining.

[0045] The above second lower cooling channel (118) can be positioned lower than the upper surface of the main heater section (610) on the side wall of the chamber (110).

[0046] As shown in FIGS. 1 to 3, the lead portion (120) may have one or more upper cooling channels (128, 129) formed in a circle on the outer edge of the substrate support portion (200) described later when viewed from the upper side.

[0047] The upper cooling channel (128, 129) is a channel formed in the lead portion (120) in a circle on the outer edge of the substrate support portion (200) described later when viewed from the upper side, and can be formed as a single loop or a double loop, etc., centered on the lead portion (120).

[0048] And the upper cooling channel (128, 129) is preferably located on the outer edge of the substrate support (200) to minimize the temperature increase of the substrate support (200).

[0049] Meanwhile, the chamber body (110) and the lead part (120) are cooled by the upper cooling channel (128, 129) and the lower cooling channel (118, 119), so the temperature of the chamber body (110) among the substrate support part (200) is relatively lowered, and thus a temperature distribution optimized for substrate processing is not formed, which causes a problem of lowering the uniformity of substrate processing.

[0050] Accordingly, it is preferable that a temperature control heater (700) for heating the ceiling portion (400) be installed between the lead portion (120) and the ceiling portion (400).

[0051] The temperature control heater unit (700) is configured to be installed between the lead unit (120) and the ceiling unit (400) to heat the ceiling unit (400), and various configurations are possible.

[0052] In particular, the temperature control heater unit (700) is characterized by controlling the amount of heat generated in conjunction with cooling by the cooling channel so as to prevent a temperature drop caused by cooling of the lead unit (120) and the chamber body (110) in the central region of the substrate support unit (200) and near the edge region with respect to the substrate (10) mounted on the substrate support unit (200).

[0053] That is, the temperature control heater unit (700) can control the amount of heat generated in conjunction with the temperature measurement of the substrate (10) described later, and the cooling temperature of the refrigerant flowing through the cooling channels (118, 119, 128, 129) of the lead unit (120) and the chamber body (110).

[0054] To this end, the temperature control heater unit (700) may include one or more first temperature control heater units (711) disposed in the central region of the substrate support unit (200) as shown in FIGS. 1, 2, and 6, and one or more second temperature control heater units (712) disposed in the edge region of the substrate support unit (200) concentric with the first temperature control heater unit (711).

[0055] The first temperature control heater (711) is a heater positioned in the central area of ​​the substrate support (200) and can be configured in various ways.

[0056] For example, the first temperature control heater unit (711) may be composed of a ring-shaped single-loop halogen heater connected to a power supply terminal (714).

[0057] The second temperature control heater unit (712) is a heater that is concentric with the first temperature control heater unit (711) and is positioned in the edge region of the substrate support unit (200), and can be configured in various ways.

[0058] For example, the second temperature control heater unit (712) may be composed of a ring-shaped double-loop halogen heater connected to a power supply terminal (715). For reference, considering that an upper cooling channel (128, 129) is formed near the edge of the lead unit (120), it is preferable to install a relatively large number of heaters compared to the central area.

[0059] In addition, at least one of the second temperature control heaters (712) may be installed in the upper central part of the baffle, that is, the side wall (300).

[0060] Meanwhile, the temperature control heater unit (700) may additionally include at least one third temperature control heater unit (713) located between the central region and the edge region of the substrate support unit (200) as shown in FIGS. 1, 2, and 6, which heats the portion of the ceiling unit (400) corresponding to the substrate (10).

[0061] The third temperature control heater unit (713) may be composed of a ring-shaped double-loop halogen heater in a single loop or multiple loop connected to a power supply terminal (716).

[0062] The temperature control heater unit (700) having the above configuration can optimize the temperature distribution within the process space (P) by heating the ceiling unit (400) from the central area to the edge of the substrate support unit (200) through the control of the heat generation amount of the first temperature control heater unit (711), the second temperature control heater unit (712), and further the third temperature control heater unit (713).

[0063] In particular, as shown in FIGS. 1 and 2, a process gas injected from the gas injection unit (500) located in the upper central region of the substrate support (200) can smoothly form a gas flow through the edge region to the exhaust hole (310) formed in the side wall (300).

[0064] Meanwhile, considering that the substrate support member (200) is sufficiently heated by the main heater member (610) described later in the wafer (substrate) area between the central area and the edge area, i.e., the edge area, while the temperature of the edge area is lowered by the cooling of the lead member (120) and the chamber body (110), the first temperature control heater member (711) may be positioned further inward than the edge of the substrate (10) mounted on the substrate support member (200), and the second temperature control heater member (712) may be positioned further outward than the edge of the substrate (10) mounted on the substrate support member (200).

[0065] Meanwhile, it is preferable that the first temperature control heater unit (711) and the second temperature control heater unit (712) have their heat outputs independently controlled to form a temperature distribution optimized for substrate processing.

[0066] In addition, at least one of the second temperature control heaters (712) may be installed in the upper central part of the baffle, that is, the side wall (300).

[0067] In addition, the amount of heat generated by the third temperature control heater unit (713) can be controlled independently.

[0068] The temperature control heater unit (700) having the above configuration can perform the role of an upper heater by compensating for heat loss in a proximity area (upper / central / outer area of ​​the process chamber) close to the upper side of the substrate support unit (200).

[0069] A temperature control heater unit (700) having the above configuration can improve the susceptor temperature control efficiency.

[0070] That is, the temperature control heater unit (700) allows the lower heater to easily reach the target temperature with appropriate power through the auxiliary role of the upper heater.

[0071] In addition, the temperature control heater unit (700) can perform temperature compensation and control functions for the substrate edge area.

[0072] A temperature control heater unit (700) having the above configuration can significantly reduce the temperature difference between the upper and lower parts (substrate support unit) of the process area (P), thereby creating a stable substrate processing environment.

[0073] In addition, the temperature distribution on the substrate support (200) is stably formed, which can significantly improve the performance of supplying process gases such as DCS and HCl, sprayed from the central part, to the substrate. (Thermal diffusion effect)

[0074] The first temperature control heater unit (711) and the second temperature control heater unit (712), having the above arrangement, can form a temperature distribution optimized for substrate processing in the substrate support unit (200) by controlling the amount of heat generated by the main heater unit (610), the lead unit (120), and the chamber body (110) in combination, as shown in FIG. 7.

[0075] Specifically, when the temperature of the substrate (10) on the substrate support (200) is 700℃, the first temperature control heater (711) and the second temperature control heater (712) can optimize the temperature distribution on the substrate support (200) as shown in FIG. 7 by heating to a temperature of 560℃ to 640℃.

[0076] That is, the first temperature control heater unit (711) and the second temperature control heater unit (712) can have their heat output controlled to be lower than the temperature of the substrate (10) on the substrate support unit (200), taking into account the temperature compensation effect of the edge portion of the substrate (10).

[0077] For example, the first temperature control heater unit (711) and the second temperature control heater unit (712) can control the amount of heat generated so that the temperature of the substrate (10) on the substrate support unit (200) is maintained at a temperature 60°C to 140°C lower than the temperature of the substrate (10) on the substrate support unit (200), taking into account the temperature compensation effect of the edge portion of the substrate (10).

[0078] If the temperature difference between the first temperature control heater unit (711) and the second temperature control heater unit (712) as described above is too large, the temperature compensation effect of the edge portion of the substrate (10) is reduced, and if the temperature difference is too small, the temperature rise of the edge portion of the substrate (10) becomes large, which is undesirable for substrate processing.

[0079] The above substrate support member (200) can be configured in various ways to be installed in the chamber body (110) and to support one or more substrates (10).

[0080] For example, the substrate support member (200) may include a substrate mounting plate (210) having one or more substrate mounting members (211) formed on its upper surface for mounting a substrate (10), and a shaft member (220) that supports the substrate mounting plate (210).

[0081] The above substrate mounting plate (210) may have a plurality of substrate mounting portions (211) formed along the circumferential direction with respect to the central portion (C).

[0082] At this time, the substrate mounting portion (211) can be installed to support the substrate (10) and to rotate about the center of the substrate mounting portion (211).

[0083] The shaft portion (220) can be installed so as to be rotatable by being coupled with a rotary drive portion (not shown) outside the chamber body (110), with the center of the central portion (C), i.e., the center of the lead portion (120), as the center of rotation.

[0084] Accordingly, the substrate mounted on the substrate mounting portion (211) revolves around the central portion (C) of the substrate support portion (200) and rotates around the central portion of the substrate mounting portion (211), so that substrate processing can be performed while revolving and rotating.

[0085] Meanwhile, in order to form the process space (P) described below, a side wall portion (300) forming a side wall along the perimeter of the substrate support portion (200) may be additionally installed.

[0086] The above side wall portion (300) can be configured in various ways to form a side wall along the perimeter of the edge of the substrate support portion (200).

[0087] The above side wall portion (300) may include extension portions (302, 304) that are formed to extend horizontally toward the substrate support portion (200) at the top and bottom, as shown in FIGS. 1 and 2.

[0088] The extension portion (302) formed at the top may have a coupling area formed therein that is coupled with the ceiling portion (400) described later. For example, a stepped portion (303) may be formed at the end of the extension portion (302) so that the edge of the ceiling portion (400) described later is seated and supported thereon.

[0089] The extension portion (304) formed at the bottom is preferably installed to form a plane identical to the upper surface of the substrate support portion (200) located during substrate processing, as shown in FIGS. 1 and 2.

[0090] Meanwhile, to discharge process gas injected from the above-mentioned side wall portion (300) and the gas injection portion (500) described later to the outside, a plurality of exhaust holes (310) formed in the extension portion (304) along the perimeter of the substrate support portion (200) may be included.

[0091] That is, the above side wall portion (300) can function as a baffle for gas discharge of the process space (P).

[0092] The above plurality of exhaust holes (310) can be formed along the perimeter of the substrate support (200).

[0093] The above plurality of exhaust holes (310) can be connected to an exhaust port (870) installed in the chamber body (110).

[0094] Additionally, the side wall portion (300) may have a second gate (320) formed at a position corresponding to the first gate (111) of the chamber body (110) for introducing and discharging the substrate (10).

[0095] Meanwhile, the above-mentioned side wall (300) can be composed of a single member or can be composed through the combination or assembly of multiple members.

[0096] The ceiling portion (400) is coupled to the central portion of the lead portion (120) so as to face the upper side of the substrate support portion (200), and is seated on the upper end of the side wall portion (300) to form a separate process space (P) in the internal space (S) together with the substrate support portion (200) and the side wall portion (300), and various configurations are possible.

[0097] The above ceiling portion (400) is a plate facing the upper side of the substrate support portion (200), is coupled to the central portion of the lead portion (120), and can be seated on the upper portion of the side wall portion (300) described above. Specifically, the above ceiling portion (400) can be seated on a stepped portion (303) formed on the upper extension portion (302) of the side wall portion (300) and coupled with the side wall portion (300).

[0098] By combining the ceiling portion (400) with the side wall portion (300), a process space (P) can be formed that is distinct from the internal space (S) surrounded by the substrate support portion (200), the side wall portion (300), and the ceiling portion (400).

[0099] The above process space (P) corresponds to a space that is separated from the internal space (S), but here, separation means only that it is physically partitioned, and since there may be a gap between the substrate support part (200) and the side wall part (300), it does not mean a completely sealed state from the internal space (S) formed by the chamber body (110) and the lead part (120).

[0100] That is, the substrate support part (200), the side wall part (300), and the ceiling part (400) are configured to surround the process space (P), so the substrate processing device according to the present invention may be configured as a double chamber structure rather than a single chamber structure.

[0101] In addition, the substrate support (200), side wall (300), and ceiling (400) may all be made of graphite material or graphite may be formed by SiC coating.

[0102] And since the ceiling portion (400) covers the upper side of the substrate support portion (200), the ceiling portion (400) may have measurement holes (410, 420) formed for in-situ monitoring of process conditions (substrate temperature, thickness, selectivity loss defect, etc.) for optical measurement by the measurement portion (910, 920) described later.

[0103] The above gas injection unit (500) can be configured in various ways to inject process gas into the process space (P).

[0104] For example, the gas injection unit (500) may be installed in the central region of the substrate support unit (200) to inject process gas from the central region of the substrate support unit (200) toward the edge region.

[0105] In one embodiment, the gas injection unit (500) may include one or more nozzle units (510) that are installed in the process space (P) through the central joint portion of the lead unit (120) and the ceiling unit (400) and inject process gas radially toward the edge of the substrate support unit (200).

[0106] At this time, the gas injection unit (500) can inject a deposition gas (source gas) and an etching gas (etching gas) simultaneously or sequentially for the SEG process.

[0107] Specifically, the nozzle section (510) may include a plurality of sub-nozzles having a multi-stage structure stacked vertically to spray a plurality of gases of different types, although not illustrated.

[0108] Each sub-nozzle can spray source gases such as DCS, MS, DS, GeH4, etching gases such as HCl, Cl2, dopant gases such as PH3, B2H6, and carrier gases such as H2.

[0109] The above gas injection unit (500) injects gas from the central part of the substrate support unit (200) toward the outer part, and since a plurality of exhaust holes (310) are formed along the perimeter of the edge of the substrate support unit (200), the gas injected from the gas injection unit (500) can form a gas flow flowing from the central part of the substrate support unit (200) toward the outer part as shown in FIGS. 1 and 2.

[0110] The above main heater (610) is configured to be installed on the lower side of the substrate support (200) to heat the substrate support (200), and various heating means such as the structure of Patent Document 1 may be applied.

[0111] By the above main heater (610), a heated atmosphere can be formed in the process space (P) through the substrate support (200) side.

[0112] In one embodiment, the main heater unit (610) may include a heating coil (611) that is wound spirally multiple times from the lower central part of the substrate support unit (200) to the outer part and generates heat by an external power source, and a heating body (612) on which the heating coil (611) is fixedly installed.

[0113] The heating coil (611) is a coil that is wound multiple times in a spiral from the lower central part of the substrate support part (200) to the outer part and generates heat by an external power source, and any configuration of a heating coil is possible.

[0114] For example, the heating coil (611) may be composed of a plate-shaped coil with a thin thickness in the vertical direction.

[0115] The above heating body (612) is configured such that the heating coil (611) is fixedly installed, and is made of a material with high thermal conductivity while being electrically insulated from the heating coil (611), so that it can be heated by the heating coil (611) and perform heating in a preset pattern on the lower side of the substrate support (200).

[0116] Meanwhile, it is preferable that an insulating member (613) be installed on the lower side of the heating body (612) to block the heat of the heating body (612) from being transferred to the chamber (110).

[0117] The above-mentioned insulating member (613) is configured to be installed on the lower side of the heating body (612) to block heat from the heating body (612) from being transferred to the chamber (110), and various configurations are possible.

[0118] Meanwhile, the substrate support member (200) may be equipped with a plurality of lift pins (190) that lift the substrate (10) upward for the introduction and discharge of the substrate (10).

[0119] The above lift pins (190) can be raised and lowered by various driving methods, and as shown in FIGS. 1 and 2, a lifting member (591) that is raised and lowered by a lifting driving device (590) at a position corresponding to a gate (111) formed in the chamber body (110) may be installed.

[0120] Meanwhile, the substrate processing device according to the present invention must perform the measurement of deposition thickness, measurement of the rotational position of the substrate support, etc., for real-time process control.

[0121] Accordingly, the substrate processing device according to the present invention may include, as shown in FIGS. 1 to 5b, one or more measuring units (910, 920) that perform optical measurement of either the upper surface of the substrate support unit (200) or the substrate (10) supported on the substrate support unit (200) through one or more viewport units (810, 820) installed on the upper side of the lead unit (120); and one or more measuring units (910, 920) that are installed on the ceiling unit (400) to form an optical path of the measuring units (910, 920), including a measuring hole (410, 420) formed in the ceiling unit (400).

[0122] The above viewport section (810, 820) is configured to be installed in one or more places on the lead section (120) for optical measurement with respect to the internal space (S), and various configurations are possible.

[0123] The above viewport portion (810, 820) may include a lead opening (121) formed in a slot shape extending from the central region of the lead portion (120) to the edge region; and one or more transparent members (811) made of a transparent material that allow light to pass through, installed in the lead opening (121) so that light measurement by the measuring portion (910, 920) is possible.

[0124] The above lead opening (121) is formed in a slot shape by extending from the central region of the lead portion (120) to the edge region, thereby enabling optical measurement of the internal space (S), and various structures are possible depending on the optical path and installation position of the measurement portion (910, 920).

[0125] For example, the lead opening (121) may have a slot shape extending from the central region of the lead portion (120) to the edge region, as shown in FIGS. 1 to 3.

[0126] And the number of formed leads (121) can be set according to the position and number of the measuring parts (910, 920).

[0127] The above transparent member (811) may have a material such as quartz or quartz that allows light transmission so that optical measurement is possible, and may have a shape corresponding to the planar shape of the above-mentioned lead opening (121) so that light measurement by the above-mentioned measuring unit (910, 920) is possible.

[0128] Meanwhile, the transparent member (811) can be installed in the lead opening (121) by various structures, and as shown in FIGS. 1 and 2, various configurations are possible, such as including an upper support member (812) and a lower support member (813) that are supported at the edge of the lead opening (121) and installed to be positioned in the middle of the transparent member (811).

[0129] The above measurement unit (910, 920) is configured to perform optical measurement of either the upper surface of the substrate support unit (200) or the substrate (10) supported on the substrate support unit (200) through the viewport unit (810, 820) installed on the upper side of the lead unit (120), and various configurations are possible depending on the measurement target, measurement principle, etc.

[0130] For example, the measuring unit (910, 920) may include at least one of a first measuring unit (910) that performs optical measurement of the edge portion of the substrate support (200); and a second measuring unit (920) that performs optical measurement of the substrate (10) mounted on the substrate support (200).

[0131] The first measuring unit (910) above is configured to perform optical measurement of the edge portion of the substrate support unit (200), and can be configured to measure the orbital position, orbital speed of the substrate support unit (200), the orbital position and rotational position of the substrate (10) mounted on the substrate mounting unit (211), etc.

[0132] The first measuring unit (910) above may include a laser displacement sensor using a laser beam in the case of position measurement.

[0133] The laser displacement sensor may include a photodiode that irradiates light vertically onto a substrate support (300) / substrate (10), and an imaging means that captures the light irradiated onto the substrate support (300) / substrate (10) by forming an angle with the light path of the photodiode.

[0134] With the above configuration, the laser displacement sensor can measure the process of the substrate support (300) and the rotation of the substrate (10).

[0135] The second measuring unit (920) is configured to perform optical measurement of the substrate (10) mounted on the substrate support (200), and can measure the temperature, reflectance, etc. of the substrate (10).

[0136] For example, the second measuring unit (920) may be configured to measure at least one of the temperature and reflectance of the substrate (10) mounted on the substrate support (200), such as a pyrometer.

[0137] The above second measuring unit (920) can be used to control the amount of heat generated by the temperature control heater unit (700) described above by measuring the temperature of the substrate (10) mounted on the substrate mounting portion (211) of the substrate support portion (200).

[0138] Meanwhile, at least one of the first measuring unit (910) and the second measuring unit (920) may be installed to be movable radially from the center of the substrate support unit (200) considering the size, position, etc. of the substrate (10).

[0139] To this end, the lead portion (120) may be equipped with a guide rail (830) for the movement of the first measuring portion (910) and the second measuring portion (920).

[0140] The guide rail (830) is configured to guide the horizontal movement of at least one of the first measuring unit (910) and the second measuring unit (920), and various configurations are possible.

[0141] Meanwhile, it is preferable that one or more light guides be installed inside the lead part (120) to enable optical measurement of the internal space (S) by means of the measuring part (910, 920) installed on the upper side of the lead part (120).

[0142] The light guide section (430, 440) is configured to be installed in the ceiling section (400) to form a light path of the measuring section (910, 920), including a measuring hole (410, 420) formed in the ceiling section (400), and various configurations are possible depending on the light guide structure.

[0143] Here, the ceiling portion (400) may have a measuring hole (410, 420) formed vertically through to connect the optical path of the measuring portion (910, 920), corresponding to the position of the measuring portion (910, 920).

[0144] And the above measuring holes (410, 420) may have a support structure formed therein for supporting the light guide parts (430, 440) described later, such as a step structure.

[0145] For example, as illustrated in FIGS. 4a to 5b, a step portion (411, 421) for supporting the lower step portion (433, 443) of the light guide portion (430, 440) may be formed in the measuring hole (410, 420).

[0146] Meanwhile, the light guide section (430, 440) may include a first light guide section (430) that forms an optical measurement light path of the first measurement section (910) and a second light guide section (440) that forms an optical measurement light path of the second measurement section (920).

[0147] The first light guide section (430) is configured to form an optical measurement light path of the first measuring section (910), and can be configured in various ways depending on the light path of the first measuring section (910), and can be formed in a cylindrical shape as shown in FIGS. 4a and 4b.

[0148] In addition, the second light guide (440) is configured to form an optical measurement light path of the second measuring unit (920), and can be configured in various ways depending on the light path of the second measuring unit (920), and can be formed in a cylindrical shape as shown in FIGS. 5a and 5b.

[0149] In particular, when the second measuring unit (920) has an irradiating light path that forms an up-and-down straight line and a receiving light path that forms an incline with the irradiating light path, the second light guide unit (440) may have an overall cylindrical shape and an eccentric tube unit (444) with a reduced diameter at the bottom portion so as to maintain the irradiating light path and the receiving light path.

[0150] Meanwhile, the installation of the light guide section (430, 440) may cause the measurement hole (410, 420) to be formed in the ceiling section (400), and the process gas may leak from the process space (P), causing contamination such as particles accumulating on the ceiling section (400), which may act as a cause of defects during substrate processing.

[0151] Accordingly, it is preferable to additionally install one or more pressing members (450, 460) that press the light guide part (430, 440) toward the upper surface of the ceiling part (400).

[0152] The above-mentioned pressure member (450, 460) is configured to press the light guide part (430, 440) toward the upper surface of the ceiling part (400), and any elastic member such as a coil spring, a plate spring, or rubber can be used.

[0153] Meanwhile, depending on the installation of the above-mentioned pressure member (450, 460), a support structure for supporting the pressure member (450, 460) needs to be provided.

[0154] The above support structure is a structure for supporting the pressurizing member (450, 460), and can be configured in various ways depending on the support structure of the pressurizing member (450, 460).

[0155] For example, the lead opening (121) may be provided with a first support member (817) having an upper support member (453, 454) formed to support an upper step member (435, 445) formed at the upper part of the light guide member (430, 440) corresponding to the light guide member (430, 440); and a second support member (815) having an upper barrel member (451, 452) formed to which the first support member (817) is fixedly coupled and which is continuous with the barrel member (431, 441) of the light guide member (430, 440).

[0156] The first support member (817) can be configured in various ways, such that an upper support member (453, 454) is formed to support an upper step member (435, 445) formed on the upper part of the light guide member (430, 440) corresponding to the light guide member (430, 440).

[0157] The upper support member (453, 454) is configured to support the upper step member (435, 445) formed on the upper part of the light guide member (430, 440), and the upper step member (435, 445) may have a flange structure and be configured to support the bottom surface of the upper support member (453, 454).

[0158] Meanwhile, considering that the light guide section (430, 440) is pressed into the ceiling section (400) by the pressure member (450, 460), it is preferable that the light guide section (430, 440) be installed such that the upper step section (435, 445) is spaced apart from the upper end of the upper support section (453, 454).

[0159] And the second support member (815) can be configured in various ways, such that the first support member (817) is fixedly coupled and an upper barrel member (451, 452) is formed that is continuous with the barrel member (431, 441) of the light guide member (430, 440).

[0160] Meanwhile, the second support member (815) may have an installation groove (455, 456) formed therein in which the upper end of the pressure member (450, 460), which is supported at the lower end of the pressure member (450, 460), is installed so as to press the upper end of the pressure member (450, 460) on the upper edge surface of the light guide member (430, 440).

[0161] And the first support member (817) and the second support member (815) can be joined by a bolt (816) connection structure, and at least one of the first support member (817) and the second support member (815) can be fixedly connected to the lead member (120) so as to be supported and installed on the lead member (120).

[0162] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention. Explanation of the symbols

[0163] 10: Substrate 110: Chamber body 120: Lead section 200: Substrate support section 300: Side wall section 400: Ceiling section 500: Gas injection unit 610: Main heater unit 700 : Temperature control heater unit 118, 119, 128, 129: Cooling channels

Claims

Claim 1 A chamber body (110) having one or more first gates (111) formed for the introduction and discharge of a substrate (10), an open upper side, and one or more lower cooling channels (118, 119) formed in at least one of a bottom wall and a side wall; A lead portion (120) coupled to the upper side of the chamber body (110) to form a sealed internal space (S) and having one or more upper cooling channels (128, 129); a substrate support portion (200) installed on the chamber body (110) such that a plurality of substrate mounting portions (211) on which a substrate (10) is placed are formed along the circumferential direction and rotate with the center of the lead portion (120) as the center of rotation; a side wall portion (300) forming a side wall along the perimeter of the substrate support portion (200); a ceiling portion (400) coupled to the central part of the lead portion (120) to face the upper side of the substrate support portion (200) and seated on the upper end of the side wall portion (300) to form a separate process space (P) in the internal space (S) together with the substrate support portion (200) and the side wall portion (300); and the The apparatus includes a gas injection unit (500) installed in the central region of the substrate support member (200) to inject process gas from the central region of the substrate support member (200) toward the edge region; a main heater unit (610) installed on the lower side of the substrate support member (200) to heat the substrate support member (200) in order to form a preset temperature condition for the substrate (10) placed on the substrate support member (200); and a temperature control heater unit (700) installed between the lead unit (120) and the ceiling unit (400) to heat the ceiling unit (400), wherein the amount of heat generated by the temperature control heater unit (700) is controlled to prevent a temperature drop caused by cooling of the lead unit (120) and the chamber body (110) near the central region and edge region of the substrate support member (200) for the substrate (10) placed on the substrate support member (200), and A substrate processing device characterized in that the temperature control heater unit (700) controls the amount of heat generated in conjunction with the cooling temperature of the lead unit (120) and the chamber body (110). Claim 2 delete Claim 3 A substrate processing apparatus according to claim 1, wherein the temperature control heater unit (700) comprises one or more first temperature control heater units (711) disposed in the central region of the substrate support unit (200) and one or more second temperature control heater units (712) disposed in the edge region of the substrate support unit (200) concentric with the first temperature control heater unit (711). Claim 4 A substrate processing apparatus according to claim 3, wherein the first temperature control heater unit (711) is composed of a ring-shaped single-loop halogen heater, and the second temperature control heater unit (712) is composed of a ring-shaped double-loop halogen heater. Claim 5 A substrate processing apparatus according to claim 3, wherein the first temperature control heater unit (711) is positioned further inward than the edge of the substrate (10) seated on the substrate support unit (200), and the second temperature control heater unit (712) is positioned further outward than the edge of the substrate (10) seated on the substrate support unit (200). Claim 6 A substrate processing apparatus according to claim 5, wherein the first temperature control heater unit (711) and the second temperature control heater unit (712) are characterized by having independently controlled heat generation amounts. Claim 7 A substrate processing apparatus according to claim 6, wherein the lead portion (120) is provided with one or more viewport portions (810, 820) for optical measurement with respect to the internal space (S), and a second measurement portion (920) is additionally installed to optically measure the temperature of a substrate (10) supported on the substrate support portion (200) through the viewport portions (810, 820) for controlling the heat generation amount of the temperature control heater portion (700). Claim 8 A substrate processing apparatus according to any one of claims 3 to 5, wherein the temperature control heater unit (700) further comprises at least one third temperature control heater unit (713) positioned between the central region and the edge region of the substrate support unit (200) to heat the portion of the ceiling unit (400) corresponding to the substrate (10). Claim 9 A substrate processing apparatus according to claim 8, wherein the third temperature control heater unit (713) is characterized by having a heat generation amount that is independently controlled.

Images