Semiconductor processing apparatus

Abstract

A substrate processing device capable of minimizing the impact of a filling gas in a lower space on a substrate processing process comprises a substrate support unit, a processing unit on the substrate support unit, and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space and a second gas in the lower space below the substrate support unit are configured to merge at the outside of the reaction space.

Description

Technology Field

[0001] The present invention relates to a substrate processing device, and more specifically, to a substrate processing device having an improved exhaust structure. Background Technology

[0002] In a substrate processing device, reaction gases introduced into the reaction space are exhausted to the outside through the exhaust space. However, a portion of the reaction gases flows into the lower part of the heating block, specifically the lower part of the reactor, which houses susceptors such as the substrate mounting section. In particular, when heterogeneous gases are supplied, reaction byproducts are generated in the lower chamber space; these byproducts become a source of contamination for the processed substrates and reduce the device yield. Furthermore, if highly corrosive cleaning gases are used to remove these byproducts, the chamber components are damaged, resulting in a shortened lifespan of the substrate processing device.

[0003] To prevent the problem of reaction gas supplied to the reaction space flowing into the bottom of the reactor, gas is supplied from the bottom of the reactor. Since this gas fills the bottom space of the reactor, it is also called a filling gas, and generally, inert gases, such as Ar or N2, are used. The filling gas balances the pressure between the reaction space on the substrate mounting section and the bottom space of the reactor, thereby preventing the reaction gas from flowing into the bottom space of the reactor. A configuration of a substrate processing apparatus using such a filling gas is disclosed in U.S. Patent Publication No. 2018-0155836. The problem to be solved

[0004] One of the problems that the present invention aims to solve is to provide a substrate processing apparatus that can minimize the influence of a filling gas on the substrate processing process when a filling gas is used to achieve pressure balance between the reaction space and the lower space of the reactor. means of solving the problem

[0005] According to one aspect of embodiments based on the technical concept of the present invention, a substrate processing device comprises: a substrate support unit; a processing unit on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, and a second gas in the lower space below the substrate support unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel may join below the exhaust unit.

[0006] According to one example of the above substrate processing device, the exhaust unit further comprises a boundary wall defining the side of the reaction space; an outer wall arranged parallel to the boundary wall; and a connecting wall extending to connect the boundary wall and the outer wall, and the junction point may be positioned below the boundary wall.

[0007] According to another example of the above substrate processing device, the substrate processing device further includes a flow control ring arranged to surround the substrate support unit, and a first gas in the reaction space is transferred to the exhaust unit through a first surface of the flow control ring, and a second gas in the lower space below the substrate support unit is transferred to the exhaust unit through a second surface of the flow control ring.

[0008] According to another example of the above-described substrate processing device, the flow control ring may be positioned below the exhaust unit so as to overlap with at least a portion of the exhaust unit.

[0009] According to another example of the above substrate processing device, the substrate processing device further includes an outer ring positioned to surround the flow control ring, the first channel may be positioned between the exhaust unit and the flow control ring, and the second channel may be positioned between the outer ring and the flow control ring.

[0010] According to another example of the above substrate processing device, the substrate processing device further includes a support member configured to support the processing unit and the exhaust unit, and the outer ring may be disposed between the exhaust unit and the support member.

[0011] According to another example of the above-described substrate processing device, the substrate support unit is configured to be movable up and down, and the flow control ring may be configured to move up and down together with the lifting of the substrate support unit.

[0012] According to another example of the above-described substrate processing device, the corner portion adjacent to the junction point of the outer ring may include a first curved surface structure.

[0013] According to another example of the above-described substrate processing device, one corner portion of the exhaust unit includes a second curved structure, and the junction point may be positioned between the first curved structure and the second curved structure.

[0014] According to another example of the above-described substrate processing device, the flow control ring may include a first portion disposed to overlap with at least a portion of the substrate support unit; and a second portion extending from the first portion along the side of the substrate support unit.

[0015] According to another example of the above substrate processing device, the flow control ring may further include a third portion extending from the second portion to overlap with at least a portion of the exhaust unit.

[0016] According to another example of the above-described substrate processing device, the flow control ring may include a first portion positioned to overlap with at least a portion of the outer ring; and a second portion extending from the first portion along the side of the substrate support unit.

[0017] According to another example of the above-described substrate processing device, the substrate support unit is configured to be movable up and down, and the flow control ring can be slid relative to the outer ring by the pushing force of the substrate support unit as the substrate support unit moves up and down.

[0018] According to another example of the above-described substrate processing device, the first portion of the flow control ring includes an uneven structure, and the second channel can be formed between the first portion of the flow control ring and the outer ring by the uneven structure.

[0019] According to another example of the above-described substrate processing device, the second portion of the flow control ring may have a surface inclined with respect to the substrate support unit.

[0020] According to another aspect of embodiments of the technical concept of the present invention, a substrate processing device comprises: a substrate support unit; a processing unit on the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; and a ring disposed below the exhaust unit so as to overlap with at least a part of the exhaust unit, wherein a first gas in the reaction space is transferred to the exhaust unit through a first surface of the ring, and a second gas in the lower space below the substrate support unit is transferred to the exhaust unit through a second surface of the ring.

[0021] According to one example of the above substrate processing device, the first gas and the second gas can be joined outside the reaction space.

[0022] According to another aspect of embodiments based on the technical concept of the present invention, a substrate processing device comprises: a substrate support unit; a processing unit on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate support unit can join at the outside of the reaction space.

[0023] According to one example of the above substrate processing device, the first gas and the second gas may be joined at a point below an exhaust unit located outside the reaction space.

[0024] According to another example of the above substrate processing device, the exhaust unit includes a boundary wall that defines the side of the reaction space, and the first gas and the second gas may be configured to be joined at the outer side of the surface of the boundary wall that contacts the reaction space. Brief explanation of the drawing

[0025] FIGS. 1 and 2 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIGS. 3 to 5 schematically illustrate a substrate processing apparatus according to some embodiments based on the technical concept of the present invention. FIG. 6 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIGS. 7 and 8 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIGS. 9 to 11 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIGS. 12 to 14 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIG. 15 schematically illustrates a substrate processing apparatus according to embodiments based on the relevant technical concept of the present invention. FIG. 16 is an enlarged view of a part of the substrate processing apparatus of FIG. 15. FIG. 17 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIG. 18 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIG. 19 is an enlarged view of a part of the substrate processing apparatus of FIG. 18. FIGS. 20 and 21 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. Figure 22 shows the process of the ring self-aligning due to the rise of the heating block. FIG. 23 illustrates the ring used in FIG. 22. Specific details for implementing the invention

[0026] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to make the present disclosure more faithful and complete and to fully convey the spirit of the present invention to those skilled in the art.

[0027] The terms used herein are for describing specific embodiments and are not intended to limit the invention. As used herein, the singular form may include the plural form unless the context clearly indicates otherwise. Additionally, as used herein, "comprise" and / or "comprising" specify the presence of the mentioned features, numbers, steps, actions, parts, elements, and / or groups thereof, and do not exclude the presence or addition of one or more other features, numbers, actions, parts, elements, and / or groups. As used herein, the term "and / or" includes any one of the listed items and all combinations of one or more of them.

[0028] Although terms such as "first," "second," etc. are used in this specification to describe various components, regions, and / or parts, it is obvious that these components, parts, regions, layers, and / or parts should not be limited by these terms. These terms do not imply a specific order, hierarchy, or superiority, and are used solely to distinguish one component, region, or part from another. Accordingly, the first component, region, or part described below may refer to the second component, region, or part without departing from the teachings of the present invention.

[0029] Hereinafter, embodiments of the present invention are described with reference to drawings that schematically illustrate ideal embodiments of the present invention. In the drawings, variations of the illustrated shapes may be expected, for example, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be interpreted as being limited to specific shapes of the areas illustrated herein, but should include, for example, variations in shape resulting from manufacturing.

[0030] FIGS. 1 and 2 schematically illustrate a substrate processing apparatus according to embodiments of the technical concept of the present invention. FIG. 1 shows a substrate processing apparatus and a part of the substrate processing apparatus (a cross-section of the part where the opening of the exhaust unit (120) is not formed). FIG. 2 shows a substrate processing apparatus and another part of the substrate processing apparatus (a cross-section of the part where the opening (OP) of the exhaust unit (120) is formed).

[0031] Referring to FIGS. 1 and 2, the substrate processing device may include a partition (100), a substrate support unit (150), a processing unit (110), an exhaust unit (120), and at least one ring (R). The substrate processing device may have a reaction space (51) and an exhaust space (55) connected to the reaction space (51) formed therein.

[0032] The partition wall (100) is a chamber that accommodates a substrate support unit (150) and may also be referred to as the chamber body. In one embodiment, a reactor containing a reaction space (51) is referred to as the inner chamber, and the entire structure of the substrate processing device surrounding a plurality of reactors (e.g., four reactors) may be referred to as the outer chamber. An exhaust line (18) may be provided inside the partition wall (100). In some embodiments, the exhaust line (18) may be formed to extend along the interior of the side wall of the partition wall (100). In one embodiment, the substrate processing device includes a first surface and a second surface adjacent to the first surface, and the exhaust line (18) may extend along the edge between the first surface and the second surface. In additional embodiments, the exhaust line (18) may be formed to extend along the interior of the lower wall of the partition wall (100).

[0033] A processing unit (110) may be positioned on a substrate support unit (150) configured to support a substrate. A reaction space (51) may be defined between the substrate support unit (150) and the processing unit (110). The processing unit (110) may serve as a first cover defining the upper surface of the reaction space (51). In other words, the first cover placed on the substrate support unit may include at least one processing unit (110).

[0034] The processing unit (110) may include components that perform appropriate functions depending on the function of the substrate processing device. For example, if the substrate processing device performs a deposition function, the processing unit (110) may include a reaction material supply unit (e.g., a showerhead assembly). In another embodiment, if the reactor performs a polishing function, the processing unit (110) may include a polishing pad.

[0035] The processing unit (110) may be a conductor and may be used as an electrode for generating plasma. That is, the processing unit (110) itself may function as an electrode for generating plasma. A processing unit (110) in this manner (a method in which the processing unit (110) itself is used as an electrode) will be referred to as a gas supply electrode below.

[0036] The substrate support unit (150) may be configured to provide an area on which a workpiece (not shown), such as a semiconductor or display substrate, is placed. The substrate support unit (150) may be supported by a driving unit (not shown) capable of vertical movement and / or rotational movement. Additionally, the substrate support unit (150) may be a conductor and may be used as an electrode that generates plasma (i.e., an electrode opposite to a gas supply electrode).

[0037] The exhaust unit (120) may be located between the processing unit (110) and the support (TLD). The exhaust unit (120) may be extended to surround the reaction space (51). Gas from the reaction space (51) may be exhausted to the exhaust port (13) through the exhaust unit (120).

[0038] In one embodiment, the exhaust unit (120) may serve as a second cover defining the side of the reaction space (51). The second cover including the exhaust unit (120) may include an exhaust space (55) connected to the reaction space (51). Thus, the exhaust unit (120) may provide the exhaust space (55). Additionally, the exhaust unit (120) may provide a space in which a processing unit (110) is accommodated. When the processing unit (110) is accommodated in the space, the processing unit (110) may come into contact with the exhaust unit (120).

[0039] The exhaust unit (120) may include a boundary wall (W) disposed between the reaction space (51) and the exhaust space (55). A first surface of the boundary wall (W) (e.g., an outer surface) may define the reaction space (51), and a second surface of the boundary wall (W) (i.e., an inner surface facing the first surface) may define the exhaust space (55). For example, the reaction space (51) may be defined by the first surface of the boundary wall (W), the upper surface of the substrate support unit (150), and the lower surface of the processing unit (110), which is the first cover. In other words, the side of the reaction space (51) may be defined by the boundary wall (W) of the exhaust unit (120).

[0040] The exhaust unit (120) may provide a portion of the space for processing an object to be processed. For example, if the substrate processing device performs a deposition function, the reaction space (51) for deposition may be limited by the exhaust unit (120). Additionally, the exhaust space (55) may be limited inside the exhaust unit (120). The reaction space (51) may be connected to the exhaust port (13) through the exhaust space (55) of the exhaust unit (120). Specifically, the gas in the reaction space (51) may be exhausted to the exhaust port (13) through the first channel (C1), the exhaust space (55), and the opening (OP).

[0041] In one example, the exhaust unit (120) may include a connecting wall (C) and an outer wall (O) extending from a boundary wall (W). The outer wall (O) of the exhaust unit (120) is positioned parallel to the boundary wall (W) and may come into contact with a support member (TLD). An opening (OP) may be formed in the outer wall (O), and the exhaust unit (120) and the exhaust port (13) may be connected through the opening (OP). The connecting wall (C) of the exhaust unit (120) may extend to connect the boundary wall (W) and the outer wall (O). The connecting wall (C) may provide a contact surface with the processing unit (110). By means of the contact surface, the processing unit (110), which is the first cover, and the exhaust unit (120), which is the second cover, may come into contact.

[0042] The support member (TLD) can support the processing unit (110) and the exhaust unit (120) by contacting the exhaust unit (120). The support member (TLD) can be supported by the partition wall (100). In this way, the support member (TLD) can support the processing unit (110), which is the first cover, and the exhaust unit (120), which is the second cover, while also being supported by the partition wall (100), and can perform the role of a top lid covering the outer chamber.

[0043] A support member (TLD) may be positioned between a bulkhead (100) and a cover (e.g., a second cover including an exhaust unit (120)). Additionally, a support member (TLD) may be positioned between a bulkhead (100) and an exhaust port (13). The support member (TLD) may include a passage (P) connecting the exhaust port (13) and the exhaust line (18) of the bulkhead (100). In a further embodiment, a sealing member (not shown) may be positioned between the support member (TLD) and the bulkhead. The sealing member may extend along the perimeter of the passage (P) or the perimeter of the exhaust line (18), thereby preventing leakage of gas moving from the passage (P) to the exhaust line (18).

[0044] At least one ring (R) may be positioned to surround the substrate support unit (150). For example, at least one ring (R) may include a flow control ring (FCR). The flow control ring (FCR) may be positioned below the exhaust unit (120). Specifically, the flow control ring (FCR) may be positioned to overlap at least a portion of the exhaust unit (120) in the vertical direction. Due to this overlapping position, a first channel (C1) may be formed between the flow control ring (FCR) and the exhaust unit (120). Consequently, a first gas (e.g., source gas and / or reaction gas) in the reaction space (51) may be transferred to the exhaust space (55) of the exhaust unit (120) through the first surface (e.g., top surface) of the flow control ring (FCR).

[0045] More specifically, the boundary wall (W) of the exhaust unit (120) may provide a first channel (C1) connecting the reaction space (51) and the exhaust space (55). For example, the first channel (C1) may be formed between the exhaust unit (120) and at least one ring (R), particularly between the exhaust unit (120) and the flow control ring (FCR). The first channel (C1) may function as a channel between the reaction space (51) and the exhaust space (55). Thus, the reaction space (51) and the exhaust space (55) may be connected through the first channel (C1) provided by the boundary wall (W).

[0046] A flow control ring (FCR) can be spaced apart from a support member (TLD) to form a second channel (C2). The flow control ring (FCR) can move laterally on the substrate support unit (150) (i.e., slide relative to the substrate support unit (150)). By adjusting the width or spacing of the second channel (C2) through the lateral movement, the pressure balance between the reaction space (51) and the lower space (57) (i.e., the space inside the outer chamber) below the substrate support unit (150) can be controlled.

[0047] The second gas introduced into the lower space (57) through the filling gas inlet (114) can be transferred to the exhaust space (55) through the second channel (C2). More specifically, the second gas within the lower space (57) can be transferred to the exhaust space (55) of the exhaust unit (120) through the second surface (e.g., side) of the flow control ring (FCR).

[0048] The support member (TLD) may provide a second channel (C2) connecting the lower space (57) and the exhaust space (55). For example, the second channel (C2) may be formed between the support member (TLD) and at least one ring (R), particularly between the support member (TLD) and the flow control ring (FCR). The second channel (C2) may function as a channel between the lower space (57) and the exhaust space (55). Thus, the lower space (57) and the exhaust space (55) may be connected through the second channel (C2) provided by the support member (TLD).

[0049] In this way, the first gas in the reaction space (51) and the second gas in the lower space (57) can move through different channels (i.e., the first channel (C1) and the second channel (C2)). The first gas and the second gas that have moved to different channels can join at a point other than the reaction space (51). For example, the first gas and the second gas can join outside the reaction space (51). Specifically, the first gas and the second gas can join under an exhaust unit (120) located outside the reaction space (51).

[0050] In one example, the first gas and the second gas may be delivered from their respective channels (C1, C2) to the exhaust unit (120) through a junction point (I) below the exhaust unit (120). The junction point (I) may be positioned outside the boundary wall (W). More specifically, the junction point (I) may be positioned outside the surface of the boundary wall (W) that contacts the reaction space (51). In one example, the junction point (I) may be positioned below the boundary wall (W) of the exhaust unit (120). In another example, the exhaust space (55) within the exhaust unit (120) at the junction point (I) may be the junction point (I).

[0051] In any example, the first gas in the reaction space (51) and the second gas in the lower space (57) will not merge in the reaction space (51). Therefore, the first gas (e.g., reaction gas) and the second gas (e.g., filling gas) can be prevented from colliding in the substrate edge region. In other words, by configuring the substrate processing device so that the first gas in the reaction space (51) and the second gas in the lower space (57) merge at the outer side of the surface of the boundary wall (W) that contacts the reaction space (51), vortices that may occur in the substrate edge region can be prevented.

[0052] Additionally, the first channel (C1) through which the first gas of the reaction space (51) passes and the second channel (C2) through which the second gas of the lower space (57) passes can be separated by at least one ring (R). Here, being separated means that the two channels extend without meeting each other. Thus, the first channel (C1) and the second channel (C2) separated by at least one ring (R), in particular by a flow control ring (FCR), can each extend without meeting each other. The first channel (C1) and the second channel (C2) separated by the flow control ring (FCR) can meet at a junction point (I) outside the flow control ring (FCR) and be delivered to the exhaust space (55).

[0053] As such, according to embodiments of the technical concept of the present invention, the effect of the filling gas supplied from the bottom of the reactor on the process on the substrate can be minimized. Furthermore, according to embodiments of the technical concept of the present invention, rapid exhaust of gas can be achieved by dividing and exhausting the gas through at least one ring structure, such as a flow control ring.

[0054] FIGS. 3 to 5 schematically illustrate a substrate processing apparatus according to some embodiments of the technical concept of the present invention. More specifically, FIG. 3 illustrates a portion of the substrate processing apparatus excluding the cover (i.e., processing unit and exhaust unit) and the exhaust port (e.g., exhaust lines (18, 28), connection port (CP), external path (EC) connected to an external pump, etc.). FIG. 4 is a view of FIG. 3 from a first direction, and FIG. 5 is a view of FIG. 3 from a second direction. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions of the embodiments that overlap below will be omitted.

[0055] Referring to FIGS. 3 to 5, exhaust lines (18, 28) are formed inside the bulkhead (100). The exhaust lines (18, 28) are connected to an external path (EC) through a connection port (CP), and the external path (EC) is connected to a main exhaust passage (211). Thus, the gas in the reaction space and the gas in the lower space are exhausted to an exhaust pump (EP) via the exhaust ports (13, 23), exhaust lines (18, 28), external path (EC), and main exhaust passage (211). Although not shown in the drawings, a flow control unit according to embodiments of the technical concept of the present invention is disposed in each exhaust port (13, 23).

[0056] As shown in FIG. 4, the two reactors (R1a, R1b) in the first direction use an internal exhaust line (18; 18a, 18b), and the remaining two reactors (R2a, R2b) in the opposite direction to the first direction use another internal exhaust line (28; 28a, 28b). The two internal exhaust lines (18, 28) are connected to an external path (EC) through their respective connection ports (CP, CP'). The external path (EC) may be implemented as a single configuration or as multiple configurations.

[0057] Ultimately, it can be seen that the four reactors utilize at least one external path (EC, EC'), a main exhaust passage (211), and an exhaust pump (EP). An isolation valve (210) may be added to the main exhaust passage (211). Thus, the exhaust pump (EP) can be protected from the outside atmosphere by the isolation valve (210) during maintenance periods. Additionally, a pressure control valve (e.g., a throttle valve) may be added to the main exhaust passage (211). The external path (EC) may be fixed in place so as not to move by being in close contact with the lower surface of the partition wall (100) of the outer chamber. In an optional embodiment, without the external path (EC), two internal exhaust lines (18, 28) may be connected inside the bottom wall of the partition wall (100) of the outer chamber and directly connected to the main exhaust passage (211).

[0058] Referring again to FIG. 3, a first external path (EC) connected to a first connection port (CP) may extend toward a first corner portion (C1) of the external chamber below the partition (100). Additionally, a second external path (EC') connected to a second connection port (CP', not shown) may extend toward a second corner portion (C2) of the external chamber below the partition (100). An exhaust pump (EP) may be positioned on one side of the substrate processing device, for example, to correspond to the center between the first corner portion (C1) and the second corner portion (C2). The first external path (EC) may extend from the portion extending to the first corner portion (C1) to the exhaust pump (EP). Similarly, the second external path (EC') may also extend from the portion extending to the second corner portion (C2) to the exhaust pump (EP).

[0059] FIG. 6 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0060] Referring to FIG. 6, the upper surface of a multi-reactor chamber (311) is shown. A plurality of reactors (RT) are arranged inside the chamber (311), and one side of each reactor (RT) is connected to an exhaust port (313). In FIG. 6, it can be seen that each reactor (RT) is connected to a respective exhaust port (313), and the exhaust port (313) is positioned asymmetrically with respect to the center of each reactor (RT).

[0061] A plurality of exhaust lines (not shown) may be formed inside the partition of the chamber (311). For example, the chamber (311) may have a rectangular shape, and the plurality of exhaust lines may include a first exhaust line, a second exhaust line, a third exhaust line, and a fourth exhaust line. In some embodiments, the first to fourth exhaust lines may be arranged to correspond to the four vertices of the rectangle.

[0062] The chamber (311) may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate support unit, at least one ring, a processing unit, an exhaust unit, and an exhaust port.

[0063] Specifically, the first reactor may include a first substrate support unit (not shown) accommodated in a partition of the chamber (311), at least one first ring surrounding the first substrate support unit, a first processing unit (312) on the first substrate support unit, a first exhaust unit (314) connected to a first reaction space between the first substrate support unit and the first processing unit (312), and a first exhaust port (313) connected to at least a portion of the first exhaust unit (314). As described above, the gas in the first reaction space and the gas in the lower space below the first substrate support unit may join at the outside of the first reaction space. Additionally, the gas in the first reaction space and the gas in the lower space below the first substrate support unit may be delivered to the first exhaust unit (314) through different channels. The different channels may be separated by the at least one first ring. Additionally, the different channels may extend along different surfaces of the at least one first ring.

[0064] The second reactor may include a second substrate support unit (not shown) accommodated in a partition of the chamber (311), at least one second ring surrounding the second substrate support unit, a second processing unit (312) on the second substrate support unit, a second exhaust unit (314) connected to a second reaction space between the second substrate support unit and the second processing unit (312), and a second exhaust port (313) connected to at least a portion of the second exhaust unit (314). As described above, the gas in the second reaction space and the gas in the lower space below the second substrate support unit may join at the outside of the second reaction space. Additionally, the gas in the second reaction space and the gas in the lower space below the second substrate support unit may be delivered to the second exhaust unit (314) through different channels. The different channels may be separated by the at least one second ring. Additionally, the different channels may extend along different surfaces of the at least one second ring.

[0065] The third reactor may include a third substrate support unit (not shown) accommodated in a partition of the chamber (311), at least one third ring surrounding the third substrate support unit, a third processing unit (312) on the third substrate support unit, a third exhaust unit (314) connected to a third reaction space between the third substrate support unit and the third processing unit (312), and a third exhaust port (313) connected to at least a portion of the third exhaust unit (314). As described above, the gas in the third reaction space and the gas in the lower space below the third substrate support unit may join at the outside of the third reaction space. Additionally, the gas in the third reaction space and the gas in the lower space below the third substrate support unit may be delivered to the third exhaust unit (314) through different channels. The different channels may be separated by the at least one third ring. Additionally, the different channels may extend along different surfaces of the at least one third ring.

[0066] The fourth reactor may include a fourth substrate support unit (not shown) accommodated in a partition of the chamber (311), at least one fourth ring surrounding the fourth substrate support unit, a fourth processing unit (312) on the fourth substrate support unit, a fourth exhaust unit (314) connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit (312), and a fourth exhaust port (313) connected to at least a portion of the fourth exhaust unit (314). As described above, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit may join at the outside of the fourth reaction space. Additionally, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit may be delivered to the fourth exhaust unit (314) through different channels. The different channels may be separated by the at least one fourth ring. Additionally, the different channels may extend along different surfaces of the at least one fourth ring.

[0067] FIGS. 7 and 8 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0068] Referring to FIGS. 7 and 8, at least one ring (R) may include at least one of a flow control ring (FCR) and an outer ring (OR). The outer ring (OR) may be positioned to surround the flow control ring (FCR). Thus, the flow control ring (FCR) may be positioned between the substrate support unit (150) and the outer ring (OR).

[0069] A first channel (C1) through which the first gas of the reaction space (51) travels can be positioned between the exhaust unit (120) and the flow control ring (FCR). A second channel (C2) through which the second gas of the lower space (57) travels can be positioned between the outer ring (OR) and the flow control ring (FCR). In this way, the first channel (C1) and the second channel (C2) are separated by the flow control ring (FCR), and the separated first channel (C1) and second channel (C2) merge at a junction point (I) outside the reaction space (51) and are delivered to the exhaust space (55), thereby enabling stable process progress.

[0070] The flow control ring (FCR) may be implemented in an 'L' shape, and for this purpose, the flow control ring (FCR) may include a first part (FCR-1) and a second part (FCR-2). The first part (FCR-1) may be defined as a part that overlaps with at least a portion of the substrate support unit (150). In an optional embodiment, the first part (FCR-1) of the flow control ring (FCR) may be positioned to be slidable on the substrate support unit (150).

[0071] In some embodiments, the substrate support unit (150) may be configured to be movable up and down. When the substrate support unit (150) rises, the flow control ring (FCR) may rise and fall together with the rise and fall of the substrate support unit (150) by means of a first part (FCR-1) of the flow control ring (FCR) arranged to overlap with the substrate support unit (15).

[0072] The second portion (FCR-2) may be defined as a portion extending vertically along the side of the substrate support unit (150) from the first portion (FCR-1). Additionally, the second portion (FCR-2) of the flow control ring (FCR) may extend horizontally (circumferentially) along the side of the support portion (TLD). In some embodiments, the second portion (FCR-2) may extend to overlap at least a portion of the exhaust unit (120). Although not illustrated in the drawings, in other embodiments, the flow control ring (FCR) may further include a third portion (see FCR-3 in FIG. 18) extending from the second portion (FCR-2) to overlap at least a portion of the exhaust unit (120).

[0073] The outer ring (OR) may be positioned on the support (TLD). Specifically, the outer ring (OR) may be positioned between the exhaust duct (120) and the support (TLD). The outer ring (OR) may be positioned to be slidable on the support (TLD). A flow control ring (FCR) may be spaced apart from the outer ring (OR) to form a second channel (C2), and by adjusting the spacing of the second channel (C2), the pressure balance between the reaction space (51) and the internal space of the outer chamber (i.e., the lower space (57)) can be controlled.

[0074] The outer ring (OR) may include a curved structure at an edge portion adjacent to the junction point (I) of the first channel (C1) and the second channel (C2). Such a curved structure may accelerate the flow of gas around the curved structure. In an optional embodiment, the exhaust unit (120) may also include a curved structure at an edge portion adjacent to the junction point (I). In this case, the junction point (I) will be positioned between the curved structure of the outer ring (OR) and the curved structure of the exhaust unit (120).

[0075] By introducing a curved structure of the outer ring (OR), the second gas moving through the second channel (C2) can be accelerated to the exhaust unit (120) while forming a laminar flow along the curved structure. Thus, the collision at the junction point (I) between the first gas moving through the first channel (C1) and the second gas moving through the second channel (C2) can be reduced. Consequently, the exhaust of the gas around the junction point (I) can be facilitated by the curved structure.

[0076] FIGS. 9 to 11 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0077] Referring to FIGS. 9 and 10, the flow control ring (FCR) may include a first portion (FCR-1') and a second portion (FCR-2). The first portion (FCR-1') of the flow control ring (FCR) may be defined as a portion that overlaps with at least a portion of the support portion (TLD). Furthermore, the first portion (FCR-1') may be extended to overlap with at least a portion of the substrate support unit (150). Thus, the flow control ring (FCR) may be implemented in a 'T' shape.

[0078] Although FIGS. 9 and 10 show a first part (FCR-1') configured to overlap with the support portion (TLD) and the substrate support unit (150), the first part (FCR-1') may be configured to overlap only with the support portion (TLD) (see FIG. 21). In this case, the flow control ring (FCR) will be implemented in an 'L' shape.

[0079] The second part (FCR-2) of the flow control ring (FCR) may extend vertically from the first part (FCR-1') along the side of the substrate support unit (150). Additionally, the second part (FCR-2) of the flow control ring (FCR) may extend horizontally (circumferentially) along the side of the support member (TLD). That is, the second part (FCR-2) of the flow control ring (FCR) may extend between the substrate support unit (150) and the support member (TLD).

[0080] By the configuration of the flow control ring (FCR), the first channel (C1) and the second channel (C2) can be separated from each other in the reaction space (51). That is, the first channel (C1) formed between the exhaust unit (120) and the flow control ring (FCR), and the second channel (C2) formed between the flow control ring (FCR) and the support (TLD) (or the outer ring on the support (OR in FIG. 12)), can be extended without meeting each other in the reaction space (51).

[0081] In some embodiments, as shown in FIGS. 9 and 10, the first channel (C1) and the second channel (C2) may be separated by a flow control ring (FCR) and extended to an exhaust area (120). In this case, the point of confluence of the first gas passing through the first channel (C1) and the second gas passing through the second channel (C2) will be the exhaust area (55) outside the reaction area (51).

[0082] The substrate support unit (150) may be configured to be movable up and down. For example, the substrate support unit (150) may move downward, and the substrate support unit (150) may load / unload a substrate in the lower space (57). Additionally, the substrate support unit (150) may move upward, and a processing process for the substrate may be performed in the reaction space (51). As the substrate support unit (150) moves up and down, the flow control ring (FCR) may come into surface contact with the substrate support unit (150).

[0083] For example, as the substrate support unit (150) moves up and down, the lower surface of the first part (FCR-1'), configured to overlap with the substrate support unit (150) of the flow control ring (FCR), and the upper surface of the stepped portion of the substrate support unit (150) may come into contact with each other. Consequently, the reaction space (51) and the lower space (57) may communicate with the exhaust space (55) through the first channel (C1) and the second channel (C2), respectively, separated by the flow control ring (FCR).

[0084] In some embodiments, a first portion (FCR-1') of the flow control ring (FCR) may include an uneven structure (Y). More specifically, the uneven structure (Y) may be formed in the first portion (FCR-1') of the flow control ring (FCR) that overlaps with at least a portion of the upper surface of the stepped portion of the support portion (TLD). By the uneven structure (Y), a second channel (C2) may be formed between the first portion (FCR-1') of the flow control ring (FCR) and the support portion (TLD).

[0085] In an optional embodiment, the first portion (FCR-1') of the flow control ring (FCR) may not include an uneven structure. In this case, as the substrate support unit (150) is raised, the flow control ring (FCR) may also be raised, and as the flow control ring (FCR) is raised, a second channel may be created between the first portion (FCR-1') and the upper surface of the stepped portion of the support (TLD). In either case, the first gas in the reaction space will be transferred to the exhaust unit through the first surface of the flow control ring (FCR), and the second gas in the lower space will be transferred to the exhaust unit through the second surface of the flow control ring (FCR).

[0086] In some embodiments, the flow control ring (FCR) may move up and down together with the lifting of the substrate support unit (150). Furthermore, the flow control ring (FCR) may slide relative to the support portion (TLD) together with the lifting of the substrate support unit (150). In this case, the exhaust efficiency of the first channel (C1) and / or the exhaust efficiency of the second channel (C2) may change depending on the degree of lifting of the substrate support unit (150).

[0087] An exemplary configuration of the flow control ring (FCR) used in the embodiments of FIGS. 9 and 10 is illustrated in FIG. 11. The flow control ring (FCR) having a first part (FCR-1') and a second part (FCR-2) may have a shape corresponding to the shape of the substrate to be processed. For example, if the substrate to be processed is a circular wafer, the flow control ring may be implemented as a circle with a larger diameter. Meanwhile, as shown in FIG. 11, the flow control ring (FCR) may be implemented to have a 'T' shaped cross-section. Additionally, the first part (FCR-1') of the flow control ring (FCR) may have an uneven structure (Y), and a second gas within the lower space may be transferred to an exhaust unit through the uneven structure (Y).

[0088] FIGS. 12 to 14 schematically illustrate a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0089] Referring to FIGS. 12 and 13, the substrate processing device may further include an outer ring (OR) positioned to surround a flow control ring (FCR). In this case, a first portion (FCR-1') of the flow control ring (FCR) may overlap with at least a portion of the outer ring (OR). Additionally, a first channel (C1) may be positioned between the exhaust unit (120) and the flow control ring (FCR), and a second channel (C2) may be positioned between the outer ring (OR) and the flow control ring (FCR). The outer ring (OR) may be positioned on a support (TLD).

[0090] The flow control ring (FCR) may be configured to slide on the outer ring (OR). For example, the lower surface of the flow control ring (FCR) or the upper surface of the outer ring (OR) may be surface-treated to have a relatively low roughness (e.g., a roughness of 0.4 or less).

[0091] The second part (FCR-2) of the flow control ring (FCR), that is, the part extending vertically along the side of the substrate support unit (150) from the first part (FCR-1'), may have a surface inclined with respect to the substrate support unit (150) (see FIG. 12 and FIG. 13). For example, the side of the substrate support unit (150) may extend in a vertical direction, and the side of the second part (FCR-2) of the flow control ring (FCR) may extend in a direction inclined with respect to the vertical direction. In another example, the side of the second part (FCR-2) of the flow control ring (FCR) may extend in a vertical direction, and the side of the substrate support unit (150) may extend in a direction inclined with respect to the vertical direction.

[0092] In this way, the flow control ring (FCR) is configured to be slidable on the outer ring (OR), and the side of the second part (FCR-2) of the flow control ring (FCR) and the side of the substrate support unit (150) are configured to be inclined relative to each other, so that the flow control ring (FCR) can move in the second direction as the substrate support unit (150) moves in the first direction. Specifically, as the substrate support unit (150) moves in the first direction, the substrate support unit (150) can come into contact with the flow control ring (FCR), and the flow control ring (FCR) can move in the second direction (e.g., sliding in the horizontal direction) by the force generated as the substrate support unit (150) continues to move in the first direction while in contact with the flow control ring (FCR).

[0093] This force can be defined as the force with which the substrate support unit pushes the flow control ring (FCR). Since the flow control ring (FCR) is slidable on the outer ring (OR), as the substrate support unit (150) moves up and down, the flow control ring (FCR) can slide against the outer ring (OR) due to the pushing force.

[0094] An exemplary configuration of the flow control ring (FCR) used in the embodiments of FIGS. 12 and 13 is illustrated in FIG. 14. As described above, the flow control ring (FCR) may include a first portion (FCR-1') that extends to overlap with the substrate support unit (150) and the outer ring (OR), and a second portion (FCR-2) that extends vertically from the first portion. Meanwhile, the second portion (FCR-2) may be configured to have an inclined surface. For example, the inclined surface may be formed such that the inner diameter of the end of the second portion (FCR-2) closer to the first portion (FCR-1') is smaller than the inner diameter of the end of the second portion (FCR-2) farther from the first portion (FCR-1').

[0095] FIG. 15 schematically illustrates a substrate processing apparatus according to embodiments based on the relevant technical concept of the present invention. FIG. 16 is an enlarged view of portion A of FIG. 15. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0096] Referring to FIG. 15, a substrate (not shown) is mounted on a heating block (79). A heating block driving unit (710) located in the lower space can move the heating block (79) up and down. Mounting and detaching of the substrate can be performed by moving the heating block (79) up and down.

[0097] The gas supplied to the reactor is introduced into the reaction space (711) on the heating block (79) on which the substrate is placed (not shown) through the gas inlet (713) and the showerhead (72). After the processing of the substrate using the gas (e.g., deposition) is completed (or during the substrate processing), the process gas (716) is exhausted. The process gas (716) is transferred to the exhaust duct (74) through the gap between the flow control ring (75) and the exhaust duct (74). The process gas transferred to the exhaust duct (74) can be exhausted to an exhaust pump (not shown) through the exhaust port (73) and the reactor wall (71).

[0098] When gas (715) is introduced into the reaction space (711) through the gas inlet (713), the filling gas (717) is introduced into the reactor lower space (712) through the filling gas inlet (714) at the bottom of the reactor. As illustrated in area (A) of FIG. 15, when the process gas (716) is exhausted into the exhaust space (76) within the exhaust duct (74), the filling gas (717) is supplied to the gap space between the heating block (79) and the flow control ring (75). By supplying the filling gas (717) to the gap space, the process gas (716) is blocked from entering the reactor lower space (712). To achieve this blockage, an adjustment operation may be performed to balance the process pressure within the reaction space (711) and the pressure in the reactor lower space (712) to which the filling gas (717) is supplied.

[0099] Meanwhile, the filling gas (717) flowing into the gap between the heating block (79) and the flow control ring (75) can reduce the exhaust efficiency. That is, the exhaust efficiency may be reduced as the filling gas (717) flowing into the gap collides with the process gas (716) after the reaction. Furthermore, such gas collisions occur at the edge of the substrate. Therefore, gas collisions can affect the uniformity of the thin film being processed.

[0100] More specifically, as shown in FIG. 16, which illustrates a case where a heating block (79) is raised to form a reaction space (711) for substrate processing, a collision may occur between the filling gas (717) and the process gas (716) moving through the space between the heating block (79) and the flow control ring (75). Such a collision of gases hinders the regular exhaust flow of the gas into the exhaust duct (74). Due to this uneven exhaust flow in the substrate edge region, the uniformity of the thin film in the substrate edge region is reduced. Therefore, the present invention discloses means and apparatus for minimizing the impact of the filling gas on the process within the reaction space.

[0101] FIG. 17 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0102] Referring to FIG. 17, a flow control ring (75) is placed at the edge of the heating block (79) to prevent the filling gas (717) from the lower space and the process gas (716) from the reaction space (711) from colliding directly near the edge of the substrate (i.e., the edge of the heating block (79)). A first exhaust channel through which the process gas (716) moves is formed between the flow control ring (75) and the exhaust duct (74), and a second exhaust channel through which the filling gas (717) moves is formed between the flow control ring (75) and the outer ring (718).

[0103] Accordingly, as shown in FIG. 17b, direct collision between the process gas (716) and the filling gas (717) around the substrate can be prevented. Furthermore, the corner portion of the outer ring (718) forms a curved structure, so that the filling gas (717) can be accelerated along the curved structure of the outer ring (718) forming the second exhaust channel by the Coanda effect. The filling gas (717) thus accelerated can be efficiently exhausted into the exhaust space (76) of the exhaust duct (74) while forming a laminar flow.

[0104] Meanwhile, the flow control ring (75) can be raised together with the heating block (79). In this case, the height of the first exhaust channel formed between the flow control ring (75) and the exhaust duct (74) can be adjusted according to the rising height of the heating block (79) and the flow control ring (75). Accordingly, the exhaust efficiency of the process gas (716) exhausted into the exhaust space (76) through the first exhaust channel can be controlled.

[0105] A flow control ring (75) seated on a heating block (79) can descend along with the lowering of the heating block (79). When the lowering of the heating block (79) continues for loading / unloading a substrate to be processed, the flow control ring (75) is separated from the heating block (79), and the separated flow control ring (75) will be seated on a support (750). The support (750) can be fixed below the chamber (CH). In an optional embodiment, the support (750) can be configured to be detachable below the chamber (CH).

[0106] When the heating block (79) rises, the flow control ring (75) seated on the support member (750) can be seated back onto the heating block (79). Thus, as the heating block (79) rises, the flow control ring (75) on the support member (750) is separated from the support member (750), and the flow control ring (75) can rise together with the heating block (79).

[0107] FIG. 18 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. FIG. 19 is an enlarged view of a part of the substrate processing apparatus of FIG. 18. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0108] Referring to FIG. 18, the exhaust paths of the process gas (716) and the filling gas (717) are separated from each other. That is, the first exhaust channel through which the process gas (716) is exhausted and the second exhaust channel through which the exhaust gas is exhausted can be separated by the outer ring (718). Accordingly, as shown in FIG. 18b, the process gas (716) is exhausted into the exhaust duct (74) without colliding with the filling gas (717) through the first exhaust channel formed between the exhaust duct (74) and the outer ring (718), and the filling gas (717) is exhausted into the exhaust duct (74) without colliding with the process gas (716) through the second exhaust channel between the chamber wall (i.e., the support) and the outer ring (718).

[0109] The flow control ring (75) may include a first portion (FCR-1'') positioned to overlap with at least a portion of a substrate support unit including a heating block (79), a second portion (FCR-2) extending vertically along the side of the substrate support unit from the first portion (FCR-1''), and a third portion (FCR-3) extending horizontally from the second portion (FCR-2) to overlap with at least a portion of an outer ring (718).

[0110] The gas flow control ring (75) is positioned at the edge of the heating block (79) and moves up and down together with the heating block (79). When the heating block (79) rises to the substrate processing position, the flow control ring (75) and the outer ring (718) make face contact (719, face sealing) and physically prevent collision between the reaction gas and the filling gas.

[0111] More specifically, as the heating block (79) rises, the lower surface of the first part (FCR-1'') can come into contact with the heating block (79), and the upper surface of the third part (FCR-3) can come into contact with the lower surface of the outer ring (718). Thus, as the heating block (79) continues to rise, the flow control ring (FCR) can also rise through the first part (FCR-1''), and the outer ring (718) can also rise through the third part (FCR-3). Due to this simultaneous rising action, the outer ring (718) is lifted up, separating the chamber wall (CH, support part) from the outer ring (718), thereby forming a second exhaust channel.

[0112] When the heating block (79) descends, the lower surface of the outer ring (718) comes into contact with the chamber wall (CH, support) and the outer ring (718) can be seated on the chamber wall (CH). Subsequently, as the heating block (79) continues to descend, the flow control ring (75) seated on the heating block (79) is separated from the heating block (79), and the lower surface of the third part (FCR-3) can come into contact with the upper surface of the support (750). Thus, the flow control ring (75) separated from the heating block (79) will be seated on the support (750).

[0113] According to the embodiment of FIG. 18, unlike the embodiment of FIG. 17, the heights of the first exhaust channel and the second exhaust channel can be determined according to the degree to which the gas flow control ring (75) lifts the outer ring (718), that is, the height of the heating block (79). Thus, the exhaust efficiency of the filling gas (717) or process gas (716) can be controlled, and the lifting position of the heating block (79) suitable for the optimal exhaust efficiency can be determined.

[0114] Meanwhile, in FIG. 18b, the side of the outer ring (718) may be spaced apart from the side of the flow control ring (75). More specifically, the second part (FCR-2) of the flow control ring (75) and the outer ring (718) may be spaced apart to form a space. Due to this spaced-apart space, a blind spot (720) exists between the outer ring (718) and the flow control ring (75). Since no filling gas is supplied to the blind spot, some of the process gas exhausted from the reaction space remains. FIG. 19 is an enlarged view of the area around the blind spot (720) in FIG. 18b.

[0115] As shown in FIG. 19, in some embodiments, at least one of the exhaust duct (74) and the outer ring (718) may include a curved structure. The curved structure may be configured to facilitate the exhaust of a process gas (e.g., reaction gas) located in the aforementioned spaced-apart space into a first exhaust channel. For example, the curved structure may have a predetermined radius of curvature.

[0116] Referring to FIG. 19, the reaction gas exhausted from the reaction space to the exhaust duct (74) is exhausted in approximately three forms. The flow of form "G1" is exhausted directly from the reaction space to the exhaust space (76 in FIG. 18) through the exhaust channel between the outer ring (718) and the exhaust duct (74). The flow of form "G2" flows along the outer wall of the exhaust duct (74) and is accelerated near the curve (L) of the exhaust duct (74) and enters the exhaust channel. The flow of form "G3" flows into the blind spot (720) and is then re-entered into the exhaust channel by the suction force within the exhaust space. At this time, the flow of form "G3" is accelerated near the curve (L') of the outer ring (718) and enters the exhaust channel. That is, due to the curved structure of the outer ring (718), residual gas and its turbulent flow in the blind spot can be prevented, and the process gas can be exhausted and removed more quickly and smoothly.

[0117] FIG. 20 schematically illustrates a substrate processing apparatus according to embodiments based on the technical concept of the present invention. The substrate processing apparatus according to these embodiments may be a modified example of the substrate processing apparatus according to the aforementioned embodiments. Descriptions that overlap between the embodiments below will be omitted.

[0118] Referring to FIG. 20, the exhaust duct (74) may include a first curved surface structure (D1), and the outer ring (718) may include a second curved surface structure (D2). In this case, the junction point (I) of the first channel through which the process gas (716) is exhausted and the second channel through which the filling gas (717) is exhausted may be positioned between the first curved surface structure (D1) of the exhaust duct (74) and the second curved surface structure (D2) of the outer ring (718). By treating the corner portions of the outer ring (718) and the exhaust duct (74) exposed to the exhaust channel in this way, a Coanda effect is induced so that the exhaust of the filling gas (717) and the process gas (716, e.g., reaction gas) can be accelerated along the curved surface of the outer ring (718) or the exhaust duct (74).

[0119] In the embodiments of FIGS. 18 to 20, the edges of the exhaust duct and the outer ring that come into contact with the gas are curved to induce a Coanda effect for smooth and rapid exhaust of the filling gas (717) and the process gas (716). To achieve this purpose, the curvature of the curved surface may preferably be R1 or greater (i.e., a radius of curvature of 1 mm or more).

[0120] The technical features of the embodiments according to the embodiments of FIGS. 18 to 20 are as follows.

[0121] 1. The gap connecting the upper and lower spaces of the reactor is bypassed. That is, gas movement from the upper to the lower and gas movement from the lower to the upper is blocked, and the gas in the lower can be discharged directly to suppress the lower discharge.

[0122] 2. By separating the gap between the existing flow control ring and the heating block (i.e., the channel through which the filling gas in the lower space is exhausted) from the substrate, process changes caused by the lower gas can be suppressed.

[0123] 3. By placing a flow control ring on the side of the heating block, a plasma confinement effect can be obtained, and by concentrating the plasma into the reaction space on the substrate, a uniform and stable plasma process can be carried out.

[0124] 4. A flow control ring positioned on the side of the heating block can move according to the up-and-down movement of the heating block. Thus, the width and volume of the exhaust channels formed between the exhaust duct and the outer ring, and between the outer ring and the chamber wall, can be controlled.

[0125] The embodiments of FIGS. 18 to 20 described above disclose controlling the exhaust flow of gas through a structure in which a flow control ring is positioned on the side of a heating block (i.e., a structure in which the flow control ring is positioned to overlap with a part of the heating block in a vertical direction). On the other hand, FIG. 21 illustrates another embodiment in which the exhaust flow of gas is controlled through a structure in which a flow control ring is positioned on an outer ring to overlap with a part of the outer ring, thereby preventing collision between the reactant gas and the filler gas at the periphery of the heating block.

[0126] Referring to FIG. 21, the distance between the side of the heating block (79) and the flow control ring (75) is configured to be very narrow. For example, the distance can be configured to be within 0.2 mm. Therefore, it is very difficult for the filling gas (717) to pass into the reaction space or for the process gas (716) to pass into the lower space. On the other hand, the flow control ring (75) and the outer ring (718) are spaced apart from each other sufficiently to allow the gas to pass through, thereby forming an exhaust channel for the filling gas (717).

[0127] Accordingly, as shown in FIG. 21, the process gas (716) and the filling gas (717) can be exhausted into the exhaust space (76) through their respective exhaust channels without colliding with each other around the heating block. In FIG. 21, collision between the process gas (716) and the filling gas (717) is minimized by making the distance between the side of the heating block (79) and the flow control ring (75) very narrow, but this structure has another advantage of making self-alignment of the flow control ring (75) within the reaction space easier. For example, if the flow control ring (75) is asymmetrically positioned on the upper surface of the outer ring (718), that is, if the center of symmetry of the inner diameter of the flow control ring (75) does not coincide with the center of the heating block (79), the heating block (79) rises and makes surface contact with a part of the inner surface of the flow control ring (75), thereby applying a horizontal force to the flow control ring (75), and thus the center of symmetry of the inner diameter of the flow control ring (75) and the center of the heating block (79) can be aligned.

[0128] FIG. 22 illustrates such a process. FIG. 22 illustrates the process in which the flow control ring (75) self-aligns by the heating block (79).

[0129] - Step 1 (Fig. 22a): The heating block (79) rises.

[0130] - Second step (Fig. 22b): The side of the heating block (79) and the inner side of the flow control ring (75) come into contact.

[0131] - Third step (Fig. 22c): As the heating block (79) continues to rise while in contact with the flow control ring (75), the movement of the flow control ring (75) begins. For example, the flow control ring (75) moves laterally relative to the outer ring (718) on the upper surface of the step of the outer ring (718) that is in surface contact (i.e., sliding).

[0132] - Step 4 (Fig. 22d): As the heating block (79) continues to rise while in contact with the flow control ring (75), self-alignment of the flow control ring (75) proceeds.

[0133] - Step 5 (Fig. 22e): The heating block (79) rises to the substrate processing position, and the self-alignment of the flow control ring (75) is completed.

[0134] The control method of the substrate processing device according to the embodiment of FIG. 22 (in particular, the self-alignment method of the flow control ring) is particularly important in high-temperature processes (e.g., high-temperature processes of 500 degrees or higher). At high temperatures, due to thermal deformation of the heating block (79) and the flow control ring (75), the width of the gap between the heating block (79) and the flow control ring (75) varies depending on the lateral position of the heating block (79) and the flow control ring (75). Therefore, when the flow control ring (75) is fixed on the outer ring (718), the filling gas or reaction gas may flow into the gap at a specific location, which affects the uniformity of the thin film at the periphery of the substrate.

[0135] According to the embodiments of FIG. 22, self-alignment of the flow control ring (75) is performed through contact between the heating block (79) and the flow control ring (75), thereby preventing deformation due to high temperature and the resulting process non-uniformity problem. To maintain this structure, the side wall of the flow control ring (75) and the side wall of the outer ring (718) are spaced apart at a certain distance, so that it is easy for the flow control ring (75) to be aligned on the upper surface of the outer ring (718).

[0136] FIG. 23 illustrates the flow control ring used in FIG. 22.

[0137] Referring to FIGS. 22 and 23, the lower surface of the flow control ring (75), that is, the portion of the flow control ring (75) in contact with the upper surface of the outer ring (718), is formed with an uneven structure (Y), so that the flow control ring (75) is supported on the outer ring (718) while simultaneously providing an exhaust channel for the filling gas, such as nitrogen (N2). Additionally, the surface roughness of the inner surface of the flow control ring (75) can be configured to be 0.4 or less so that the inner surface of the flow control ring (75) slides due to the weight of the flow control ring while in contact with the heating block (79), and self-aligning proceeds through this sliding.

[0138] To ensure a clear understanding of the present invention, the shapes of each part in the attached drawings should be understood as exemplary. It should be noted that various shapes other than those depicted may be modified. It will be obvious to those skilled in the art that the present invention described above is not limited to the aforementioned embodiments and attached drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical concept of the present invention.

Claims

Claim 1 A substrate processing device comprising: a substrate support unit; a processing unit on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space is exhausted to the exhaust unit through a first channel, and a second gas in the lower space below the substrate support unit is exhausted to the exhaust unit through a second channel, wherein the first channel and the second channel merge on the inner lower surface of the exhaust unit, and the first channel and the second channel meet at a single point outside the reaction space, wherein the first channel extends along the inner lower surface of the exhaust unit, and a vertical axis extending through the second channel intersects the inner lower surface of the exhaust unit, and wherein the vertical axis and the horizontal axis extending through the first channel intersect each other at the single point outside the reaction space so as to prevent collision between the first gas and the second gas in the substrate edge area. Claim 2 A substrate processing apparatus according to claim 1, wherein the exhaust unit further comprises: a boundary wall defining the side of the reaction space; an outer wall arranged parallel to the boundary wall; and a connecting portion extending to connect the boundary wall and the outer wall, wherein the first channel and the second channel are located below the boundary wall, and the first gas in the reaction space and the second gas in the lower space meet outside the surface of the boundary wall in contact with the reaction space so as to prevent vortex generation in the substrate edge region. Claim 3 A substrate processing apparatus according to claim 1, further comprising a flow control ring arranged to surround the substrate support unit, wherein a first gas in the reaction space is exhausted to the exhaust unit through a first surface of the flow control ring, and a second gas in the lower space below the substrate support unit is exhausted to the exhaust unit through a second surface of the flow control ring. Claim 4 A substrate processing apparatus according to claim 3, wherein the exhaust unit protrudes from the flow control ring such that the flow control ring overlaps with at least a portion of the exhaust unit. Claim 5 A substrate processing apparatus according to claim 3, further comprising an outer ring disposed to surround the flow control ring, wherein the first channel is disposed between the lower surface of the exhaust unit and the upper surface of the flow control ring, and the second channel is disposed between the inner surface of the outer ring and the outer surface of the flow control ring. Claim 6 A substrate processing apparatus according to claim 5, further comprising a support member configured to support the processing unit and the exhaust unit, wherein the outer ring is disposed between the exhaust unit and the support member. Claim 7 A substrate processing device according to claim 5, wherein the substrate support unit is configured to be movable up and down, and the flow control ring is configured to move up and down together with the lifting of the substrate support unit. Claim 8 A substrate processing apparatus according to claim 1, further comprising a third channel connected to the first channel and the second channel, wherein a "T" shaped channel is formed below the exhaust unit by the first channel, the second channel and the third channel. Claim 9 A substrate processing apparatus according to claim 5, wherein the flow control ring comprises: a first portion disposed to overlap with at least a portion of the substrate support unit; and a second portion extending from the first portion along the side of the substrate support unit. Claim 10 A substrate processing apparatus according to claim 9, wherein the flow control ring further comprises a third portion extending from the second portion to overlap with at least a portion of the exhaust unit. Claim 11 A substrate processing apparatus according to claim 5, wherein the flow control ring comprises: a first portion disposed to overlap with at least a portion of the outer ring; and a second portion extending from the first portion along the side of the substrate support unit. Claim 12 A substrate processing device according to claim 11, wherein the substrate support unit is configured to be movable up and down, and the flow control ring is slid relative to the outer ring by the pushing force of the substrate support unit as the substrate support unit rises and falls. Claim 13 A substrate processing apparatus according to claim 11, wherein the first portion of the flow control ring includes an uneven structure, and the second channel is formed between the first portion of the flow control ring and the outer ring by the uneven structure. Claim 14 A substrate processing device according to claim 11, wherein the second portion of the flow control ring has a surface inclined with respect to the substrate support unit. Claim 15 A substrate processing device comprising: a substrate support unit; a processing unit above the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; and a ring below the exhaust unit, wherein the outer circumference of the ring overlaps with at least a portion of the inner circumference of the exhaust unit, a first gas in the reaction space is transferred to the exhaust unit through a first surface of the ring, and a second gas in the lower space below the substrate support unit is transferred to the exhaust unit through a second surface of the ring, and the substrate processing device comprises: a first channel between the reaction space and the exhaust unit; A substrate processing device further comprising a second channel between the lower space and the exhaust unit, wherein the first channel and the second channel join at a point outside the reaction space on the inner lower surface of the exhaust unit, the first channel extends along the inner lower surface of the exhaust unit, a vertical axis extending through the second channel intersects the inner lower surface of the exhaust unit, and the vertical axis and the horizontal axis extending through the first channel intersect each other at the point outside the reaction space so as to prevent collision between the first gas and the second gas in the substrate edge area. Claim 16 A substrate processing apparatus according to claim 15, further comprising a third channel connected to the first channel and the second channel, wherein a “T” shaped channel is formed below the exhaust unit by the first channel, the second channel and the third channel. Claim 17 A substrate processing device comprising: a substrate support unit; a processing unit on the substrate support unit; an exhaust unit connected to a reaction space between the substrate support unit and the processing unit; a first channel for flowing a first gas within the reaction space; and a second channel for flowing a second gas within a lower space below the substrate support unit, wherein the first channel and the second channel join at a single point outside the reaction space, the first channel extends along the inner lower surface of the exhaust unit, a vertical axis extending through the second channel intersects the inner lower surface of the exhaust unit, and the vertical axis and the horizontal axis extending through the first channel intersect each other at the single point outside the reaction space so as to prevent collision between the first gas and the second gas in the substrate edge region. Claim 18 A substrate processing apparatus according to claim 17, further comprising a third channel connected to the first channel and the second channel, wherein a “T” shaped channel is formed below the exhaust unit by the first channel, the second channel and the third channel. Claim 19 A substrate processing apparatus according to claim 17, wherein the exhaust unit includes a boundary wall defining the side of the reaction space, the first channel and the second channel join outside the surface of the boundary wall in contact with the reaction space, and the first gas in the reaction space and the second gas in the lower space meet outside the surface of the boundary wall in contact with the reaction space so as to prevent vortex generation in the substrate edge region. Claim 20 delete

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