Integrated plasma diagnostic method and device

Abstract

An integrated plasma diagnostic device according to one embodiment of the disclosed invention includes a chamber configured to form a space for generating plasma and to receive gas, a plasma generating unit for generating plasma within the chamber, a probe inserted into the chamber, and a plasma measuring unit including a voltage applying unit for applying a preset voltage to the probe, wherein the probe may include a first measuring unit composed of a conductive material for measuring the electrical characteristics of the plasma and a second measuring unit formed on the inner side with respect to the center of the first measuring unit for measuring the optical characteristics of the plasma.

Description

Technology Field

[0001] The present invention relates to an integrated plasma diagnostic method and apparatus, and more specifically, to an invention capable of diagnosing plasma state variables by utilizing the electrical characteristics and optical characteristics of the plasma. Background Technology

[0002] Plasma is an ionized gas composed of positive ions, negative ions, electrons, excited atoms, molecules, and highly chemically active radicals. Because it possesses electrical and thermal properties very different from ordinary gases, it is also referred to as the fourth state of matter. Since this plasma contains ionized gas, it is very useful in semiconductor manufacturing processes, such as by accelerating it using electric or magnetic fields or inducing chemical reactions to clean, etch, or deposit wafers or substrates.

[0003] Since plasma density or plasma electron temperature plays a critical role in semiconductor and display process results, accurately measuring plasma density or electron temperature is essential in research fields utilizing plasma.

[0004] Generally, a probe is inserted into a chamber, and plasma parameters such as plasma density and electron temperature are measured based on the current flowing through the probe. A representative technique utilizing this involves measuring the electrical characteristics of the plasma by analyzing the harmonic components of the electron current flowing through the probe at the floating potential.

[0005] Furthermore, conventional Optical Emission Spectroscopy (OES) technology is a method that measures the optical properties of a plasma by utilizing the intensity of light emitted as particles within the plasma are excited and return to a stable state, and obtains plasma parameters based on this.

[0006] However, OES, such an optical diagnostic method, had a problem in that the accuracy of variable measurements decreased because the intensity of the detected light decreased when plasma process byproducts were deposited on the probe.

[0007] In addition, conventional technology could only verify the relative value of plasma density, which presented a problem in that it was difficult to measure absolute plasma state variables. Prior art literature

[0008] Republic of Korea Registered Patent No. 10-0784824 (Plasma diagnostic device and diagnostic method) The problem to be solved

[0009] Accordingly, the integrated plasma diagnostic device according to one embodiment of the disclosed invention is an invention created to solve the problems of the aforementioned prior art, and more specifically, can provide an integrated plasma diagnostic device capable of measuring the electrical and optical characteristics of plasma by implementing the probe as a probe capable of integrated sensing.

[0010] In addition, an integrated plasma diagnostic device according to one embodiment of the disclosed invention can correct the amount of light of the plasma measured through a probe to the actual amount of light of the plasma using the thickness of the deposited film of the probe, thereby providing an integrated plasma diagnostic device that can increase the precision of measurement. means of solving the problem

[0011] An integrated plasma diagnostic device according to one embodiment of the disclosed invention includes a chamber configured to form a space for generating plasma and to receive gas, a plasma generating unit for generating plasma within the chamber, a probe inserted into the chamber, and a plasma measuring unit including a voltage applying unit for applying a preset voltage to the probe, wherein the probe may include a first measuring unit composed of a conductive material for measuring the electrical characteristics of the plasma and a second measuring unit for measuring the optical characteristics of the plasma.

[0012] The first measuring unit above may be configured to calculate the thickness of the deposited film formed on the probe based on a current signal applied from the plasma.

[0013] The integrated plasma diagnostic device may further include a processor that corrects the actual amount of light of the plasma from the amount of light measured by the second measuring unit based on the thickness of the deposited film calculated by the first measuring unit.

[0014] The above processor can calculate state variable information of the plasma based on the corrected actual amount of light.

[0015] The state variable information of the above plasma may be the density information of the above plasma.

[0016] The first measuring part and the second measuring part may be configured in a circular shape having different cross-sectional areas with the same center.

[0017] The first measuring part above may be composed of a metallic material, and the second measuring part above may be composed of quartz.

[0018] The second measuring unit above may be configured to analyze the spectrum of light emitted when electrons of the plasma radicals transition from a high energy state to a low energy state.

[0019] An integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a voltage generation step for generating an alternating sinusoidal voltage, a probe application step for applying the generated voltage to a probe in a chamber, a current measurement step for measuring a current generated from a plasma generated in the chamber, and a light quantity measurement step for measuring a light quantity generated from the plasma.

[0020] The above integrated plasma diagnostic method may further include a step of calculating the thickness of a deposited film formed on the probe based on a current signal applied from the plasma.

[0021] The above integrated plasma diagnostic method may further include a step of correcting the actual amount of light of the plasma from the amount of light based on the thickness of the deposited film.

[0022] The above integrated plasma diagnostic method may further include a step of calculating state variable information of the plasma based on the corrected actual light amount.

[0023] The probe may include a first measuring part composed of a conductive material to measure the electrical characteristics of the plasma, and a second measuring part formed on the inner side relative to the center of the first measuring part to measure the optical characteristics of the plasma.

[0024] The first measuring part above may be composed of a metallic material, and the second measuring part above may be composed of quartz.

[0025] An integrated plasma diagnostic device according to one embodiment of the disclosed invention may include a chamber configured to form a space for generating plasma and to receive gas, a plasma generating unit that generates plasma within the chamber, a plasma measuring unit that includes a probe inserted into the chamber and a voltage applying unit that applies a preset voltage to the probe, and a processor that compensates for the optical characteristics of the plasma measured through the probe using the electrical characteristics of the plasma. Effects of the invention

[0026] An integrated plasma diagnostic device according to one embodiment of the disclosed invention has the advantage of being able to measure the electrical and optical characteristics of plasma by implementing the probe as a probe capable of integrated sensing.

[0027] In addition, the integrated plasma diagnostic device according to one embodiment of the disclosed invention has the advantage of being able to improve the precision of measurement by correcting the amount of plasma light measured through the probe to the actual amount of plasma light using the thickness of the deposited film of the probe. Brief explanation of the drawing

[0028] FIG. 1 is a diagram showing the structure of an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 2 is a drawing showing a probe of an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 3 is a drawing showing a plasma measuring unit of an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 4 is a graph showing the thickness of a plasma-deposited film according to the measurement frequency and input voltage amplitude in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. Figures 5(a) and 5(b) are graphs showing the result of measuring the thickness of a deposited film in real time and the resulting decrease in the amount of light measured in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 6 (a), (b) and (c) are drawings illustrating a process of compensating for the amount of light of plasma in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 7 is a graph showing the line ratio according to the presence or absence of light intensity compensation in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 8 is a graph showing the density of CF2 gas depending on whether or not there is light intensity compensation in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 9 is a flowchart illustrating an integrated plasma diagnostic method according to one embodiment of the disclosed invention. Specific details for implementing the invention

[0029] The embodiments described in this specification and the configurations illustrated in the drawings are merely preferred examples of the disclosed invention, and various modifications that may replace the embodiments and drawings of this specification may exist at the time of filing this application.

[0030] Additionally, the same reference numerals or symbols presented in each drawing of this specification represent parts or components that perform substantially the same function.

[0031] Furthermore, the terms used herein are for describing embodiments and are not intended to limit or / or restrict the disclosed invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

[0032] In this specification, terms such as “comprising” or “having” are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and do not preclude the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0033] Additionally, terms including ordinal numbers, such as "first," "second," etc., used in this specification may be used to describe various components, but said components are not limited by said terms, and said terms are used solely for the purpose of distinguishing one component from another.

[0034] For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and / or" includes a combination of a plurality of related described items or any of a plurality of related described items.

[0035] Hereinafter, embodiments according to the present invention will be described in detail with reference to the attached drawings.

[0037] FIG. 1 is a schematic diagram showing an integrated plasma diagnostic device according to one embodiment of the disclosed invention.

[0038] Referring to FIG. 1, an integrated plasma diagnostic device (100) according to one embodiment of the disclosed invention may include a plasma generating unit (200) that generates plasma to be measured and a plasma measuring unit (100).

[0039] Specifically, the plasma generating unit (200) may include a chamber (10) which is a main body forming a space where plasma is generated, a power source (20) disposed on the outside of the chamber (10), a plurality of antennas (30) disposed on one side of the chamber (10) to generate plasma, an impedance matching unit (40) connected to the antenna (30) to match the impedance of the antenna (30), a substrate (50) on which a plasma process is performed, a plasma variable diagnostic device (100) capable of measuring various variables of the plasma within the chamber (10), and a pumping system (60) configured to pump a source gas, etc., which is a source of plasma generation.

[0040] More specifically, the chamber (10) can be defined as a vessel having a space for a workpiece requiring plasma process treatment, such as a substrate (50), and a space for generating plasma.

[0041] As shown in FIG. 1, a plurality of antennas (30) for generating plasma may be installed at the top of the chamber (10), and the plurality of antennas (30) may be connected to an impedance matching unit (40).

[0042] The impedance matching unit (40) can be connected to the power supply (20) that supplies power (20) to the plasma generation unit (200) and the chamber (10), respectively.

[0043] A pumping system for pumping source gas, etc., which is a source of plasma generation, may be formed in the lower part of the chamber (10).

[0044] As illustrated in FIG. 1, a plasma generation unit (200) using a method of generating plasma using a plurality of antennas (30) can be referred to as an inductively coupled plasma generation device.

[0045] However, the integrated plasma diagnostic device (1) according to the present invention is not limited to generating plasma using an inductive coupling method, but can also be applied to devices and methods that generate plasma using a capacitive coupling method.

[0046] For convenience of explanation, the following description will be based on the inductively coupled plasma generator shown in FIG. 1.

[0047] A plasma measuring unit (100) of a plasma variable diagnostic device (1) according to one embodiment of the present invention can measure various state variables of the plasma generated inside a chamber (10).

[0048] In this invention, the term "state variable" refers to a variable representing various chemical and physical characteristics related to plasma.

[0049] For example, the plasma measuring unit (100) of the integrated plasma diagnostic device (1) according to the present invention can measure the density of the plasma inside the chamber (10), the temperature of the electrons of the plasma existing inside the chamber (10), etc.

[0050] To this end, a probe (140) of a plasma measuring unit (100) may be provided inside the chamber (10).

[0051] In a representative embodiment, a probe (140) of a plasma measuring unit (100) capable of transmitting a sinusoidal wave to the plasma may be positioned inside the chamber (10) to penetrate one wall surface of the main body of the plasma generating device (1) forming the chamber (10).

[0052] Accordingly, as illustrated in FIG. 1, when the probe (140) penetrates one wall of the integrated plasma diagnostic device (1) and applies an alternating sinusoidal signal to the plasma, the probe (140) can be said to have the form of a floating probe.

[0053] However, the arrangement of the probe (140) is illustrated only as an example, and the probe (140) may be modified to be provided on the upper part of the pumping system (60).

[0054] The probe (140) is placed inside the chamber (10) and may be composed of a probe containing a metal material to allow current to flow.

[0055] Through this, when voltage is applied to the probe (140) by the voltage generating unit described later, current flows through the probe (140) due to the potential difference between the plasma and the probe (140), and the plasma measuring unit (100) of the disclosed invention can measure the current flowing through the probe (140).

[0056] Additionally, the probe (140) according to the disclosed invention can be implemented as a probe having a cylindrical shape.

[0057] However, embodiments of the present invention are not limited to cylindrical probes, and can be implemented as probes of various shapes as long as they are capable of measuring plasma density or electron temperature.

[0058] Additionally, although not shown in the drawing, the processor can control various components of the plasma generation unit (200) and the plasma measurement unit (100) of the integrated plasma diagnostic device (1).

[0059] Specifically, the processor can control the power supply (20) that applies voltage to the plasma generating unit (200) to control the magnitude or shape of the voltage applied to the plasma generating unit (200), and can control the density of the plasma generated by the plasma generating device (1) by adjusting the magnitude of the impedance of the impedance matching unit (40).

[0060] In addition, the processor can control the voltage generation unit of the plasma measurement unit (100) as well as the plasma generation unit (200), and accordingly, can control the magnitude and frequency of the sinusoidal wave applied to the probe (140).

[0061] Accordingly, the control unit can be implemented as a processor, controller, ALU (arithmetic logic unit), digital signal processor, microcomputer, FPA (field programmable array), PLU (programmable logic unit), microprocessor, or a device capable of executing and responding to instructions.

[0063] FIG. 2 is a drawing showing a probe of an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 3 is a drawing showing a plasma measuring unit of an integrated plasma diagnostic device according to one embodiment of the disclosed invention.

[0064] Referring to FIGS. 2 and FIGS. 3, a probe (120) of an integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention can be inserted into a chamber (10) of a plasma generating unit (200).

[0065] Specifically, the probe (120) of the integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention may include a first measuring part (121) and a second measuring part (122).

[0066] More specifically, the first measuring part (121) may be composed of a conductive material to measure the electrical characteristics of the plasma in the chamber (10).

[0067] Additionally, the second measuring unit (122) measures the optical properties of the plasma and can be formed on the inner side relative to the center of the first measuring unit (121).

[0068] Specifically, the first measuring part (121) may be composed of a metal material that is conductive and on which ions can be deposited.

[0069] Additionally, the first measuring part (121) may be configured with a larger area than the second measuring part (122).

[0070] For example, the first measuring part (121) and the second measuring part (122) may be configured in a circular shape having different cross-sectional areas at the same center.

[0071] That is, the second measuring part (122) of the disclosed invention may be formed in the central region of the probe (120), and the first measuring part (121) may be formed in the outer region of the probe (120) to surround the second measuring part (122).

[0072] Specifically, the first measuring part (121) can be configured to surround the radially outer side of the second measuring part (122), which is configured in a circular shape, and can measure the electrical characteristics of the plasma through the ions of the plasma.

[0073] This first measuring unit (121) can receive a preset voltage from the voltage application unit (110).

[0074] Additionally, the second measuring unit (122) may be configured to detect photons emitted by particles in the plasma as they are excited and return to a stable state, thereby measuring the amount of light in the plasma.

[0075] That is, the second measuring unit (122) can be configured to analyze the spectrum of light emitted when electrons of the plasma radicals transition from a high energy state to a low energy state.

[0076] This second measuring unit (122) may be made of quartz.

[0077] Specifically, quartz is a material composed of silicon dioxide (SiO2) and can be made of a colorless, transparent material having a crystal structure belonging to the hexagonal system.

[0078] Accordingly, the probe (120) of the integrated plasma diagnostic device (1) of the disclosed invention can simultaneously measure the electrical and optical characteristics of the plasma with a single probe (120), and by mutually utilizing the measurement results of the first measurement unit (121) and the second measurement unit (122) by a processor, there is a technical effect of being able to measure the state variables of the plasma more precisely.

[0079] More specifically, the first measuring unit (121) can be configured to apply a voltage generated by the voltage application unit (110) to a plasma sheath in the chamber (10), and to allow current to flow from the voltage (Vp) generated from the plasma.

[0080] More specifically, a plasma sheath can represent a specific region that occurs in a plasma environment.

[0081] Plasma is a high-energy state of gas composed of electrons and ions, which can be maintained through reaction processes in which electrons collide with ions to generate new electrons and ions.

[0082] The plasma sheath refers to the boundary region between the plasma and the surrounding non-plasma environment, where the plasma interacts with the surrounding environment and exhibits special physical properties.

[0083] Therefore, the plasma sheath can have plasma sheath resistance (Rsh) and plasma sheath capacitance (Csh) values.

[0084] The voltage application unit (110) means a configuration in which, after generating a voltage, the generated voltage is applied to the first measurement unit (121) of the probe (120).

[0085] Accordingly, as shown in FIGS. 2 and 3, the voltage application unit (110) is electrically connected to the probe (120) through a configuration such as a wire, and can apply a preset voltage to the probe (120) placed inside the chamber (10).

[0086] The shape and magnitude of the voltage applied by the voltage application unit (110) to the probe (120) may be set differently depending on the plasma generation environment, but the voltage applied by the voltage application unit (110) may be composed of a sinusoidal voltage generated by an alternating current voltage.

[0087] Meanwhile, although not shown in FIGS. 2 and 3, a self-bias generating unit (not shown) may be disposed between the probe (120) and the voltage application unit (110).

[0088] When a sinusoidal signal generated in the voltage application unit (110) passes through the self-bias generation unit, a self-bias voltage can be applied to both ends of the self-bias generation unit.

[0089] Therefore, the self-bias or self-bias voltage value applied to the self-bias generator can be measured by the processor.

[0090] In addition, as shown in FIG. 3, between the plasma sheath and the probe (120), a capacitance (Cdep) is generated by the deposition film depending on the deposition film deposited on the probe (120) as the process progresses.

[0091] Accordingly, the integrated plasma diagnostic device (1) of the disclosed invention can calculate the capacitance (Cdep) of the deposited film by measuring the electrical characteristics of the plasma, and can calculate the thickness of the deposited film based thereon.

[0092] More specifically, the first measuring unit (121) of the integrated plasma diagnostic device (1) according to the disclosed invention may be configured to calculate the thickness of the deposited film formed on the probe (120) based on a current signal applied from the plasma.

[0093] Specifically, the first measuring unit (121) of the integrated plasma diagnostic device (1) according to the disclosed invention can calculate the capacitance (Cep) of the deposited film based on a current signal applied from the plasma.

[0094] At this time, the capacitance (Cep) due to the deposited film calculated through the first measuring unit (121) may be the magnitude of the capacitance over time.

[0095] Subsequently, the processor of the integrated plasma diagnostic device (1) of the disclosed invention can correct the actual amount of light of the plasma from the amount of light measured by the second measuring unit (122) based on the thickness of the deposited film calculated by the first measuring unit (121).

[0096] More specifically, the amount of light measured by the second measuring unit (122). It can be defined as shown in the equation (1) below.

[0098] Equation (1):

[0099] Referring to Equation (1), the amount of light measured through the second measuring unit (122) of the integrated plasma diagnostic device (1) of the disclosed invention is the actual amount of plasma light without considering the deposited film. Light amount reduced by the deposited film It can be defined as the value minus .

[0100] At this time, the amount of light reduced due to the deposited film The thickness d of the deposited film can be calculated as a function of the thickness d of the deposited film through the first measuring unit (121) of the integrated plasma diagnostic device (1) according to the present invention.

[0101] Therefore, the processor according to the disclosed invention [contains] the actual amount of plasma without considering the deposited film It can produce.

[0102] In addition, the processor of the integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention uses the following equation (2) to [indicate] the actual amount of light The radical density of the plasma based on can be calculated.

[0104] Equation (2):

[0105] In other words, density The amount of light emitted when radical A, possessing [it], transitions from an excited state to a stable state It can be defined as in the above-mentioned equation (2).

[0106] Accordingly, the integrated plasma diagnostic device (1) according to the disclosed invention can calculate plasma state variable information based on the actual amount of light of the plasma with the influence of the deposition film removed, rather than the amount of light of the plasma measured with the influence of the deposition film, and thus has a technical effect of increasing measurement precision compared to the conventional method.

[0107] In this case, the plasma state variable information can be defined as the plasma density information.

[0108] In addition, although FIG. 2 illustrates and describes the first measuring part (121) and the second measuring part (122) of the probe (120) of the integrated plasma diagnostic device (1) according to the disclosed invention as being formed side by side on the center side and the outer side of the same surface, the shape of the probe (120) according to the disclosed invention is not limited thereto.

[0109] For example, the first measuring part (121) and the second measuring part (122) of the integrated plasma diagnostic device (1) according to the disclosed invention have the same cross-sectional area, and the second measuring part (122) may be formed on one side of the first measuring part (121).

[0110] More specifically, the first measuring part (121) and the second measuring part (122) of the integrated plasma diagnostic device (1) according to the disclosed invention may be arranged parallel to each other along the longitudinal direction of the probe (120), and the second measuring part (122) may be arranged in front of the first measuring part (121) so as to be formed closer to the plasma in the chamber (10).

[0111] In this case, by configuring the first measuring part (121) and the second measuring part (122) of the probe (120) with a transparent conductive material, it is possible to receive the light quantity signal of the plasma and simultaneously measure the current signal of the plasma applied as a displacement current.

[0113] FIG. 4 is a graph showing the thickness of a plasma-deposited film according to the measurement frequency and input voltage amplitude in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 5 (a) and (b) are graphs showing the result of measuring the thickness of a deposited film in real time and the decrease in the measured light amount according to the result in an integrated plasma diagnostic device according to one embodiment of the disclosed invention.

[0114] Referring to FIG. 4, an integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention can measure the electrical characteristics of the plasma and measure the thickness of the deposited film of the probe (120) as shown in FIG. 4.

[0115] As shown in FIG. 4, it can be seen that the thickness of the deposited film of the probe (120) measured under appropriate frequency and amplitude conditions is measured close to the reference line.

[0116] Referring to FIG. 5(a), the probe (120) of the plasma diagnostic device (1) according to one embodiment of the disclosed invention can be seen to increase the thickness of the deposited film over time.

[0117] At the same time, referring to FIG. 5(b), it can be seen that the amount of light measured through the plasma measuring unit (100) of the plasma diagnostic device (1) according to one embodiment of the disclosed invention decreases as the thickness of the deposited film increases.

[0119] FIG. 6 (a), (b) and (c) are drawings illustrating a process of compensating for the amount of light of plasma in an integrated plasma diagnostic device according to one embodiment of the disclosed invention.

[0120] Referring to FIG. 6 (a), an integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention can calculate a value of the decrease in light intensity over time due to a deposited film.

[0121] Additionally, referring to FIG. 6(b), an integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention can calculate a light amount compensation value that takes into account the reduced light amount.

[0122] Finally, referring to FIG. 6(c), an integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention can calculate the actual amount of light of the plasma by compensating the amount of light by adding the amount of light compensation value shown in FIG. 6(b) to the measured amount of light shown in FIG. 6(a).

[0124] FIG. 7 is a graph showing the line ratio according to the presence or absence of light intensity compensation in an integrated plasma diagnostic device according to one embodiment of the disclosed invention. FIG. 8 is a graph showing the density of CF2 gas according to the presence or absence of light intensity compensation in an integrated plasma diagnostic device according to one embodiment of the disclosed invention.

[0125] Referring to FIG. 7, the line ratio of the integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention may vary depending on whether or not there is light intensity compensation.

[0126] Specifically, the line ratio measured by the integrated plasma diagnostic device (1) according to one embodiment of the invention disclosed prior to compensation shows a tendency to decrease over time in the case prior to compensation, but it can be confirmed that the line ratio according to one embodiment of the invention disclosed after compensation is measured to be almost constant over time.

[0127] In addition, referring to FIG. 8, it can be seen that the density of CF2 gas measured by the integrated plasma diagnostic device (1) according to one embodiment of the disclosed invention shows a tendency to decrease over time in the case before compensation, but the density of CF2 gas according to the disclosed invention after compensation is measured to be almost constant over time.

[0129] FIG. 9 is a flowchart illustrating an integrated plasma diagnostic method according to one embodiment of the disclosed invention.

[0130] Referring to FIG. 9, an integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a step (S110) of generating an alternating sinusoidal voltage in a voltage application unit (110).

[0131] Additionally, an integrated plasma diagnostic method according to one embodiment of the disclosed invention may include the step (S120) of applying a generated voltage to a probe (120).

[0132] More specifically, the step (S120) of applying the generated voltage to the probe (120) may include the step of applying the sinusoidal voltage generated from the voltage application unit (110) to the first measurement unit (121) and the second measurement unit (122) of the probe (120).

[0133] Additionally, an integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a step (S130) of measuring a current generated from the plasma through a probe (120).

[0134] More specifically, the step (S130) of measuring the current generated from the plasma through the probe (120) may include the step of the first measuring part (121) of the probe (120) applying the voltage generated from the voltage application part (110) to the plasma, and measuring the current according to the ions generated from the plasma through the first measuring part (121).

[0135] Additionally, an integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a step (S140) of measuring the amount of light generated from the plasma through a probe (120).

[0136] More specifically, the step (S140) of measuring the amount of light generated from the plasma through the probe (120) may include the step of measuring the amount of light emitted from the plasma through the second measuring part (122) of the probe.

[0137] Additionally, the integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a step (S150) of calculating the thickness of the deposited film and correcting the actual amount of light.

[0138] More specifically, the step (S150) of calculating the thickness of the deposited film and correcting the actual amount of light may include the step of calculating the thickness of the deposited film deposited on the probe (120) using the electrical characteristics of the plasma measured by the first measuring unit (121) by the processor.

[0139] Additionally, the step of calculating the thickness of the deposited film and correcting the actual amount of light (S150) may include the step of correcting the actual amount of light of the plasma from the measured amount of light based on the thickness of the deposited film calculated by the processor.

[0140] Additionally, the integrated plasma diagnostic method according to one embodiment of the disclosed invention may include a step (S160) of calculating a final plasma state variable.

[0141] More specifically, the step of calculating the final plasma state variable (S160) may include the step of calculating density information among the plasma state variable information based on the corrected actual amount of light.

[0142] Accordingly, the integrated plasma diagnostic device according to one embodiment of the disclosed invention has the advantage of being able to measure the electrical and optical characteristics of the plasma by implementing the probe (120) as an integrated sensing probe (120).

[0143] In addition, the integrated plasma diagnostic device according to one embodiment of the disclosed invention has the advantage of being able to correct the amount of light of the plasma measured through the probe (120) to the actual amount of light of the plasma using the thickness of the deposited film of the probe (120), thereby increasing the precision of the measurement.

[0144] The device described above may be implemented as a hardware component, a software component, and / or a combination of a hardware component and a software component. For example, the device and components described in the embodiments may be implemented using one or more general-purpose or special-purpose computers, such as, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), a programmable logic unit (PLU), a microprocessor, or any other device capable of executing and responding to instructions. The processing unit may execute an operating system (OS) and one or more software applications executed on the operating system. Additionally, the processing unit may access, store, manipulate, process, and generate data in response to the execution of the software. For ease of understanding, the processing unit may be described as being used as a single unit, but those skilled in the art will understand that the processing unit may include multiple processing elements and / or multiple types of processing elements. For example, the processing unit may include multiple processors or one processor and one controller. In addition, other processing configurations, such as parallel processors, are also possible.

[0145] Software may include computer programs, code, instructions, or a combination of one or more of these, and may configure a processing unit to operate as desired or instruct the processing unit independently or collectively. Software and / or data may be embodied in any type of machine, component, physical device, virtual equipment, computer storage medium, or device so as to be interpreted by the processing unit or to provide instructions or data to the processing unit. Software may be distributed over networked computer systems and may be stored or executed in a distributed manner. Software and data may be stored on one or more computer-readable recording media.

[0146] The method according to the embodiment may be implemented in the form of program instructions that can be executed through various computer means and recorded on a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, etc., either alone or in combination. The program instructions recorded on the medium may be those specifically designed and configured for the embodiment, or they may be those known and available to those skilled in the art of computer software. Examples of computer-readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical recording media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specifically configured to store and execute program instructions, such as ROM, RAM, and flash memory. Examples of program instructions include machine code, such as that generated by a compiler, as well as high-level language code that can be executed by a computer using an interpreter, etc.

[0147] Although the embodiments have been described above with reference to limited examples and drawings, those skilled in the art can make various modifications and variations from the description above. For example, suitable results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents. Therefore, other implementations, other embodiments, and equivalents to the claims below are also within the scope of the claims. Explanation of the symbols

[0148] 1; Integrated Plasma Diagnostic Device 100; Plasma measuring unit 200; Plasma generation unit 10; chamber 20; Power 30; antenna 40; Impedance matching section 50; substrate 60; Pumping system 110; Voltage application section 120; probe 121; 1st measuring part 122; 2nd measuring part

Claims

Claim 1 An integrated plasma diagnostic device comprising: a plasma generating unit that generates plasma within the chamber, including a chamber configured to form a space for generating plasma and receive a gas; and a plasma measuring unit that includes a probe inserted into the chamber and a voltage applying unit that applies a preset voltage to the probe; wherein the probe comprises: a first measuring unit composed of a conductive material to measure the electrical characteristics of the plasma; and a second measuring unit to measure the optical characteristics of the plasma; wherein the first measuring unit and the second measuring unit are configured in a circular shape having different cross-sectional areas at the same center. Claim 2 An integrated plasma diagnostic device according to claim 1, wherein the first measuring unit is configured to calculate the thickness of a deposited film formed on the probe based on a current signal applied from the plasma. Claim 3 An integrated plasma diagnostic device, further comprising, in paragraph 2, a processor that corrects the actual amount of light of the plasma from the amount of light measured by the second measuring unit based on the thickness of the deposited film calculated by the first measuring unit. Claim 4 An integrated plasma diagnostic device according to paragraph 3, wherein the processor calculates state variable information of the plasma based on the corrected actual amount of light. Claim 5 An integrated plasma diagnostic device characterized in that, in paragraph 4, the state variable information of the plasma is the density information of the plasma. Claim 6 delete Claim 7 An integrated plasma diagnostic device according to claim 1, characterized in that the first measuring part is composed of a metallic material and the second measuring part is composed of quartz. Claim 8 An integrated plasma diagnostic device according to claim 1, characterized in that the second measuring unit is configured to analyze the spectrum of light emitted when electrons of the plasma radicals transition from a high energy state to a low energy state. Claim 9 An integrated plasma diagnostic method comprising: a voltage generation step for generating an alternating sinusoidal voltage; a probe application step for applying the generated voltage to a probe in a chamber; a current measurement step for measuring a current generated from a plasma generated in the chamber; and a light quantity measurement step for measuring a light quantity generated from the plasma; wherein the probe comprises: a first measurement part composed of a conductive material to measure the electrical characteristics of the plasma; and a second measurement part formed on the inner side with respect to the center of the first measurement part to measure the optical characteristics of the plasma. Claim 10 An integrated plasma diagnostic method characterized by further including, in claim 9, the step of calculating the thickness of a deposited film formed on the probe based on a current signal applied from the plasma. Claim 11 An integrated plasma diagnostic method characterized by further including, in claim 10, a step of correcting the actual amount of light of the plasma from the amount of light based on the thickness of the deposited film. Claim 12 An integrated plasma diagnostic method characterized by further including, in claim 11, a step of calculating state variable information of the plasma based on the corrected actual amount of light. Claim 13 delete Claim 14 An integrated plasma diagnostic method according to claim 9, characterized in that the first measuring part is composed of a metallic material and the second measuring part is composed of quartz. Claim 15 An integrated plasma diagnostic device comprising: a plasma generating unit that generates plasma within the chamber, including a chamber configured to form a space for generating plasma and receive a gas; a plasma measuring unit including a probe inserted into the chamber and a voltage applying unit that applies a preset voltage to the probe; and a processor that compensates for the optical characteristics of the plasma measured through the probe using the electrical characteristics of the plasma; wherein the probe comprises: a first measuring unit composed of a conductive material to measure the electrical characteristics of the plasma; and a second measuring unit formed on the inner side relative to the center of the first measuring unit, which measures the optical characteristics of the plasma.

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