Device and method for eliminating static electricity on surface of wafer

Abstract

The present invention provides a wafer surface electrostatic removal device comprising an electrostatic chuck (30); a circuit module (70); a first power source (91); and a second power source (92), wherein the circuit module (70) is connected to the electrostatic chuck (30), and the electrostatic chuck (30) is for fixing a wafer (80); the first power source (91) is controllably connected to the circuit module (70) so that a first voltage provided by the first power source (91) through the circuit module (70) can penetrate an oxide layer on the surface of the wafer (80); and the second power source (92) is controllably connected to the circuit module (70) so that a second voltage provided by the second power source (92) through the circuit module (70) can remove electrostatic charge on the surface of the wafer (80). Since the present invention does not use a mechanical perforation method and does not use a sharp object to penetrate the oxide layer, wear on the surface of the wafer (80) can be prevented, thereby improving the lifespan of the wafer (80).

Description

Technology Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer surface electrostatic removal device and a method thereof. Background Technology

[0002] Due to differences in wafer processing, some wafers possess electrostatic voltages of varying magnitudes before entering inspection equipment. This generated electrostatic charge creates an interference electromagnetic field between the wafer and the electron gun, deflecting the path of the electron beam emitted from the electron gun. This causes a voltage difference between the acceleration voltage and the wafer voltage, affecting image focus, which can result in loss of focus or even affect measurement results.

[0003] To this end, conventional electrostatic removal technology generally uses a method of measuring the electrostatic voltage on the wafer surface in real time via a probe during wafer transfer, fitting the relationship, and then mechanically penetrating the oxide layer on the wafer surface with a shear module of the equipment to remove all electrostatic charge from the wafer prior to processing; however, this method can cause wear on the wafer and affect its lifespan.

[0004] Based on this, the present invention is specifically proposed. The problem to be solved

[0005] In order to solve the problem of causing wear on the wafer in the prior art and shortening the wafer's lifespan, the present application provides a wafer surface electrostatic removal device and a method thereof. means of solving the problem

[0006] A first aspect of the present invention provides a wafer surface electrostatic removal device comprising: an electrostatic chuck; a circuit module; a first power source; and a second power source, wherein the circuit module is connected to the electrostatic chuck, and the electrostatic chuck is for fixing a wafer; wherein the first power source is controllably connected to the circuit module so that a first voltage provided by the first power source through the circuit module can penetrate an oxide layer on the wafer surface; and wherein the second power source is controllably connected to the circuit module so that a second voltage provided by the second power source through the circuit module can remove electrostatic charge on the wafer surface.

[0007] In this method, the electrostatic chuck is used to secure the wafer, and the circuit module is connected to the electrostatic chuck to connect with the wafer. When the circuit module is connected to a first power source via switching, the first power source provides a first voltage capable of penetrating the oxide layer on the wafer surface, thereby enabling the circuit module to conduct electricity with the wafer. After penetrating the oxide layer, the circuit module is switched to connect to a second power source, which provides a second voltage to the circuit module. At this time, the second power source neutralizes the static electricity on the wafer surface, thereby eliminating the static electricity. Since this method does not use a mechanical drilling method and does not use a sharp object to penetrate the oxide layer, wear on the wafer surface can be prevented, which can extend the lifespan of the wafer.

[0008] In a further embodiment of the present invention, the electrostatic chuck comprises a chuck body, a first pin, a second pin, and a third power source, wherein the first pin is provided on the chuck body and connected to the third power source, and the third power source is for supplying power to the chuck body through the first pin, and the second pin is provided on the chuck body, one end of which is connected to a circuit module and the other end of which is for contacting a wafer.

[0009] In the present invention, the third power source is connected to the chuck body through the first pin to supply power to the chuck body, and the second pin is provided within the chuck body and contacts the wafer and circuit module to connect the wafer and the circuit module to each other, and penetrates the oxide layer by receiving the impact of the first voltage of the first power source, or neutralizes static electricity by receiving the influence of the second voltage of the second power source.

[0010] In an additional embodiment of the present invention, the first voltage is higher than the second voltage, the first power source is a high-voltage power source, and the second power source is a programmable power source.

[0011] In the present method, the first power source is a high-voltage power source that easily penetrates the oxide layer, and the second power source is a programmable power source, so static electricity on the wafer surface can be quantified and removed according to its size.

[0012] In a further embodiment of the present invention, the wafer surface electrostatic removal device further includes a probe for detecting the electrostatic voltage of the wafer surface.

[0013] In this method, the probe can detect the voltage on the wafer surface in real time, and the voltage detected by the probe can be quantified to remove the voltage on the wafer surface, and simultaneously, even after neutralizing the static electricity on the wafer surface with a second voltage, it can be verified whether the static electricity has been completely removed through continued detection.

[0014] In a further embodiment of the present invention, the circuit module comprises a first resistor, a second resistor, and a voltmeter, wherein a plurality of first resistors connected in series are connected in parallel to a wafer conducted by a second pin. The voltmeter is connected in parallel to the plurality of first resistors connected in series, and a first power source or a second power source is connected in series to the second resistor and then controlled to be connected to the circuit module.

[0015] In the present method, a plurality of first resistors connected in series are connected in parallel to the wafer, and at the same time, a voltmeter is also connected in parallel to the wafer. When a first power source applies a first voltage to the wafer and penetrates the oxide layer, the voltmeter is simultaneously connected in parallel with the first resistor and the wafer, so the detected value of the voltmeter changes when the oxide layer is penetrated. At this time, by immediately disconnecting the connection between the first power source and the circuit module, the first voltage is prevented from being continuously applied to the wafer, thereby preventing damage to the wafer, and at the same time, the first voltage is prevented from affecting the electrostatic charge on the wafer surface.

[0016] In a further embodiment of the present invention, the wafer surface electrostatic removal device further comprises an optical camera and a motion base, wherein the optical camera is for determining the current position of the wafer, and the motion base is equipped with an electrostatic chuck and is for adjusting the position of the wafer on the electrostatic chuck to determine the optical position of the wafer.

[0017] In this method, the current position of the wafer can be monitored in real time through an optical camera, and the electrostatic chuck mounted on the wafer is fixed to a movable base. If the optical camera determines that the wafer requires position adjustment, the movement of the movable base can be controlled to adjust the wafer's center so that it is positioned on the electron beam.

[0018] In an additional embodiment of the present invention, the wafer surface electrostatic removal device further includes a control module, and the control module is connected to a voltmeter via communication. The control module controls the connection or disconnection of a first power source and a circuit module, and controls the connection or disconnection of a second power source and a circuit module.

[0019] In the present method, when a first power source applies a first voltage to a wafer to penetrate the oxide layer, the data of the voltmeter changes when the oxide layer is penetrated. At this time, the voltmeter transmits information that the oxide layer has already been penetrated to the control module, and the control module, based on the above information, disconnects the connection between the first power source and the circuit module to prevent the wafer from being damaged due to the high voltage of the first voltage and thus affecting the wafer's lifespan, and at the same time connects a second power source to the circuit module to remove static electricity from the wafer.

[0020] A second aspect of the present invention relates to a wafer surface electrostatic removal method implemented based on a wafer surface electrostatic removal device provided by the first aspect of the present invention, wherein

[0021] A step of controlling the connection between the first power source and the circuit module so that the first voltage provided by the first power source applies an electric shock to the oxide layer of the wafer; and

[0022] A method for removing static electricity from a wafer surface is provided, comprising the step of controlling the connection between the second power source and the circuit module so that the second voltage provided by the second power source removes static electricity from the wafer surface.

[0023] In a further embodiment of the present invention, prior to the step of controlling the connection between the second power source and the circuit module so that the second voltage provided by the second power source removes static electricity from the wafer surface, the method comprises:

[0024] In the process of controlling the movement of the wafer by the electrostatic chuck to determine the optical position and calibrate the wafer, a step of controlling the probe to detect the measured voltage on the wafer surface;

[0025] A step of determining the distance between each measurement point and the center of the wafer based on the position of the probe and the electron beam and the movement path of the electrostatic chuck; and

[0026] The method further includes the step of fitting a relationship curve (Vr) of the distance between the measurement point and the distance between the measurement point and the wafer center, based on the measurement voltage of each measurement point and the distance between each measurement point and the wafer center.

[0027] In this method, the probe measures the voltage of the wafer more accurately by measuring the voltage during the process in which the electrostatic chuck moves the wafer together with it for optical positioning and correction. Since the wafer is in the process of optical positioning and correction, the position of the measurement point after positioning can be derived by utilizing the movement path of the electrostatic chuck through the position of the probe (i.e., the position of the measurement point before positioning). Since the position of the electron beam corresponds to the center position of the wafer after positioning, a relationship curve (Vr) can be fitted using the above data, and the real-time electrostatic voltage of the wafer surface can be obtained by combining the relationship curve (Vr) with the data obtained from the probe.

[0028] In a further embodiment of the present invention, the step of controlling the connection between the second power source and the circuit module so that the second voltage provided by the second power source removes static electricity from the wafer surface is

[0029] A step of controlling the connection between the second power source and the circuit module;

[0030] Based on the above circuit module, a step of determining whether the first voltage electrically penetrates the oxide layer of the wafer;

[0031] When the first voltage electrically penetrates the oxide layer of the wafer, the step of obtaining the electrostatic voltage at the center point of the wafer through the relationship curve; and

[0032] The method includes the step of removing static electricity from the wafer surface by controlling the second power source to apply a reverse voltage having an opposite charge with the same magnitude as the electrostatic voltage at the center point of the wafer to the wafer.

[0033] In the present method, the circuit module determines whether the first voltage has penetrated the oxide layer based on the change in voltmeter data. If the oxide layer has been penetrated, the circuit module switches to the second power source and obtains the electrostatic voltage at the center point of the wafer through the relationship curve (Vr). At this time, the second power source is controlled to apply a voltage in the direction of the electrostatic voltage to the wafer through the circuit module to neutralize the electrostatic charge on the wafer surface and remove the electrostatic charge on the wafer surface. Effects of the invention

[0034] In summary, the wafer surface electrostatic removal device and method provided by the present application have at least the following beneficial effects:

[0035] The electrostatic chuck is used to secure the wafer, and the circuit module is connected to the electrostatic chuck to connect with the wafer. When the circuit module is connected to a first power source via switching, the first power source provides a first voltage capable of penetrating the oxide layer on the wafer surface, allowing the circuit module to conduct electricity with the wafer. After penetrating the oxide layer, the circuit module is switched to connect to a second power source, which provides a second voltage to the circuit module. At this time, the second power source neutralizes the static electricity on the wafer surface, thereby eliminating the static electricity. Since this method does not use a mechanical drilling method and does not use sharp objects to penetrate the oxide layer, wear on the wafer surface can be prevented, which can extend the wafer's lifespan. Brief explanation of the drawing

[0036] To more clearly explain the specific embodiments of the present application or the technical methods of the prior art, the drawings to be used in describing the specific embodiments or prior art are briefly introduced below. Obviously, the drawings described below are part of the embodiments of the present application, and those skilled in the art can obtain other attached drawings from these drawings without creative effort. FIG. 1 is a schematic diagram of a structure in which a circuit module, a wafer, and a power source are connected, provided by an embodiment of the present application. FIG. 2 is a schematic diagram of the structure of a power supply provided by an embodiment of the present application. FIG. 3 is a schematic diagram of the structure of a wafer surface electrostatic removal device provided by an embodiment of the present application. FIG. 4 is a schematic diagram of the structure of an electrostatic chuck provided by an embodiment of the present application. FIG. 5 is a step flowchart of a wafer surface electrostatic removal method provided by an embodiment of the present application. The drawing symbols are as follows: 10: Chamber, 20: Moving base, 30: Electrostatic chuck, 31: First pin, 32: Second pin, 33: Chuck body, 40: Optical camera, 50: Probe, 60: Electron gun; 70: Circuit module, 71: First resistor, 72: Voltmeter, 73: Second resistor; 80: Wafer; 90: Power supply, 91: 1st power supply, 92: 2nd power supply, 93: 3rd power supply. Specific details for implementing the invention

[0037] In the description of this application, where terms indicating a direction or positional relationship appear, such as “center,” “vertical,” “horizontal,” “length,” “width,” “thickness,” “top,” “bottom,” “front,” “back,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inside,” “outside,” “clockwise,” “counterclockwise,” “axial,” “radial,” “main direction,” etc., unless otherwise specified, they should be understood based on the direction or positional relationship shown in the drawings. This is merely for the purpose of describing and simplifying the description of this application and should not be understood as limiting this application, as it does not indicate or imply that the device or element must have a specific direction or be configured and operated in a specific direction.

[0038] Furthermore, where features limited to "first" or "second" appear, this is for illustrative purposes only and should not be understood as indicating relative importance or implying the number of designated technical features. Features limited to "first" or "second" may explicitly or implicitly include at least one corresponding limited feature. Where the expression "multiple" appears, it should generally be understood to mean including at least two, e.g., two, three, etc., unless clearly and specifically limited otherwise.

[0039] In this application, unless otherwise explicitly defined or limited, terms such as “mounting,” “interconnection,” “connection,” and “fixing” should be understood in a broad sense. For example, this may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, an electrical connection, a direct connection, or an indirect connection through an intermediate medium; it may be an internal connection between two elements or an interactive relationship between two elements. Those skilled in the art will understand the specific meaning of these terms in this application according to the specific circumstances.

[0040] In the description of this specification, where terms such as “one embodiment,” “some embodiment,” “example,” “specific example,” or “some example” appear, they mean that the specific features, structures, materials, or properties described in relation to said embodiment or example are included in at least one embodiment or example of this application. Exemplary expressions of such terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the described specific features, structures, materials, or properties may be combined in an appropriate manner in one or more embodiments or examples. Additionally, unless contradictory, those skilled in the art may combine and combine features of other embodiments or examples described in this specification with those of other embodiments or examples.

[0041] Referring to FIGS. 1 and 2, a first aspect of the present invention provides a wafer (80) surface electrostatic removal device comprising: an electrostatic chuck (30); a circuit module (70); a first power source (91); and a second power source (92), wherein the circuit module (70) is connected to the electrostatic chuck (30) and the electrostatic chuck (30) is for fixing a wafer (80); the first power source (91) is controllably connected to the circuit module (70) so that a first voltage provided by the first power source (91) through the circuit module (70) can penetrate an oxide layer on the surface of the wafer (80); and the second power source (92) is controllably connected to the circuit module (70) so that a second voltage provided by the second power source (92) through the circuit module (70) can remove electrostatic charge on the surface of the wafer (80).

[0042] In this method, the electrostatic chuck (30) is for fixing the wafer (80), and the circuit module (70) is connected to the electrostatic chuck (30) and connected to the wafer (80). When the circuit module (70) is connected to the first power source (91) by switching, the first power source (91) provides a first voltage capable of penetrating the oxide layer on the surface of the wafer (80), thereby allowing the circuit module (70) to conduct electricity with the wafer (80). After penetrating the oxide layer, the circuit module (70) is switched to be connected to the second power source (92), and the second power source (92) provides a second voltage to the circuit module (70). At this time, the second power source (92) neutralizes the static electricity on the surface of the wafer (80), and the static electricity is removed. Since this method does not use a mechanical perforation method and does not use a sharp object to penetrate the oxide layer, wear on the surface of the wafer (80) can be prevented, thereby improving the lifespan of the wafer (80).

[0043] Referring to FIG. 4, in an additional embodiment, the electrostatic chuck (30) comprises a chuck body (33), a first pin (31), a second pin (32), and a third power source (93). The first pin (31) is provided on the chuck body (33) and connected to the third power source (93), and the third power source (93) is for supplying power to the chuck body (33) through the first pin (31). The second pin (32) is provided on the chuck body (33) and is connected to a circuit module (70) at one end and contacts a wafer (80) at the other end.

[0044] In this method, the third power source (93) is connected to the chuck body (33) through the first pin (31) to supply power to the chuck body (33), and the second pin (32) is provided within the chuck body (33) and contacts the wafer (80) and the circuit module (70) to connect the wafer (80) and the circuit module (70) to each other, and penetrates the oxide layer by receiving the first voltage of the first power source (91), or neutralizes static electricity by receiving the second voltage of the second power source (92).

[0045] In an additional embodiment, the first voltage is higher than the second voltage, the first power source (91) is a high-voltage power source, and the second power source (92) is a programmable power source.

[0046] In this method, the first power source (91) is a high-voltage power source that can easily penetrate the oxide layer, and the second power source (92) is a programmable power source, so that static electricity on the surface of the wafer (80) can be quantified and removed according to size.

[0047] Referring to FIG. 3, in an additional embodiment, the wafer (80) surface electrostatic removal device further includes a probe (50) for detecting electrostatic voltage on the wafer (80) surface.

[0048] In the present method, the probe (50) can detect the voltage on the surface of the wafer (80) in real time, and the voltage detected through the probe (50) can be quantified to remove the voltage on the surface of the wafer (80) and, at the same time, can be verified whether the static electricity on the surface of the wafer (80) has been completely removed through continued detection even after neutralizing the static electricity on the surface of the wafer (80) with a second voltage.

[0049] In an additional embodiment, the circuit module (70) includes a first resistor (71), a second resistor (73), and a voltmeter (72), and a plurality of first resistors (71) connected in series are connected in parallel to a wafer (80) conducted by a second pin (32). The voltmeter (72) is connected in parallel to the plurality of first resistors (71) connected in series, and the first power source (91) or the second power source (92) is connected in series to the second resistor (73) and then controlled to be connected to the circuit module (70).

[0050] In the present invention, a plurality of first resistors (71) connected in series are connected in parallel to the wafer (80), and at the same time, a voltmeter (72) is also connected in parallel to the wafer (80). When the first power source (91) applies a first voltage to the wafer (80) to penetrate the oxide layer, the voltmeter (72) is simultaneously connected in parallel to the first resistors (71) and the wafer (80), so the detection value of the voltmeter (72) changes when the oxide layer is penetrated. At this time, by immediately disconnecting the connection between the first power source (91) and the circuit module (70), the first voltage is prevented from being continuously applied to the wafer (80), thereby preventing damage to the wafer (80), and at the same time, the first voltage is prevented from affecting the static electricity on the surface of the wafer (80).

[0051] In a specific embodiment, referring to FIG. 1, a power source (90, including a first power source (91) or a second power source (92)) is connected in series with a second resistor (73) and then connected to a voltmeter (72), two first resistors (71) connected in series are connected in parallel to the voltmeter (72), and the middle portion of the two first resistors (71) connected in series is grounded, and a wafer (80) is connected in parallel to the voltmeter (72) through two second pins (32).

[0052] In an additional embodiment, the wafer (80) surface electrostatic removal device further comprises an optical camera (40) and a moving base (20), wherein the optical camera (40) is for determining the current position of the wafer (80), and the moving base (20) is equipped with an electrostatic chuck (30) and is for adjusting the position of the wafer (80) on the electrostatic chuck (30) to determine the optical position of the wafer (80).

[0053] In this method, the current position of the wafer (80) can be monitored in real time through an optical camera (40), and the electrostatic chuck (30) on which the wafer (80) is mounted is fixed to a movable base (20). When the optical camera (40) determines that the position of the wafer (80) needs to be adjusted, the movement of the movable base (20) can be controlled to adjust the position so that the center of the wafer (80) is positioned on the electron beam.

[0054] In an additional embodiment, the wafer (80) surface electrostatic removal device further includes a control module, and the control module is connected to a voltmeter (72) via communication. The control module controls the connection or disconnection of the first power source (91) and the circuit module (70), and controls the connection or disconnection of the second power source (92) and the circuit module (70).

[0055] In the present method, when the first power source (91) applies a first voltage to the wafer (80) to penetrate the oxide layer, the data of the voltmeter (72) changes when the oxide layer is penetrated. At this time, the voltmeter (72) transmits information that the oxide layer has already been penetrated to the control module, and the control module, based on the above information, cuts off the connection between the first power source (91) and the circuit module (70) to prevent the wafer (80) from being damaged due to the high voltage of the first voltage and thus affecting the lifespan of the wafer (80), and at the same time, connects the second power source (92) to the circuit module (70) to remove static electricity from the wafer (80).

[0056] In an additional embodiment, a wafer (80) surface electrostatic removal device is provided within a chamber (10), and an electron gun (60) that emits an electron beam is further provided within the chamber (10). An optical camera and a moving base (20) are combined to move the wafer (80) fixed to the electrostatic chuck (30) onto the electron beam.

[0057] Referring to FIG. 5, a second aspect of the present invention provides a wafer surface electrostatic removal method implemented based on a wafer (80) surface electrostatic removal device provided by the first aspect of the present invention, said method,

[0058] S100: A step of controlling the movement of the wafer (80) by the electrostatic chuck (30) to determine and correct the optical position of the wafer (80), and controlling the probe (50) to detect the measured voltage on the surface of the wafer (80);

[0059] S200: A step of determining the distance between each measurement point and the center of the wafer (80) based on the position of the probe (50) and the electron beam and the movement path of the electrostatic chuck (30);

[0060] S300: A step of fitting a relationship curve (Vr) of the distance between the measurement point and the distance between the measurement point and the center of the wafer (80) based on the measurement voltage of each measurement point and the distance between each measurement point and the center of the wafer (80);

[0061] S400: A step of controlling the connection between the first power source (91) and the circuit module (70) so that the first voltage provided by the first power source (91) applies an electric shock to the oxide layer of the wafer (80);

[0062] S500: A step of controlling the connection between the second power source (92) and the circuit module (70) so that the second voltage provided by the second power source (92) removes static electricity from the surface of the wafer (80);

[0063] The above S500 step is,

[0064] A step of controlling the connection between the second power source (92) and the circuit module (70);

[0065] A step of determining whether the first voltage electrically penetrates the oxide layer of the wafer (80) based on the circuit module (70);

[0066] When the first voltage electrically penetrates the oxide layer of the wafer (80), a step of obtaining the electrostatic voltage at the center point of the wafer (80) through a relationship curve;

[0067] The method includes the step of removing static electricity from the surface of the wafer (80) by controlling the second power source (92) to apply a reverse voltage having an opposite charge with the same magnitude as the static electricity voltage at the center point of the wafer (80).

[0068] In this method, the circuit module (70) determines whether the first voltage has penetrated the oxide layer based on the data change of the voltmeter (72). If the oxide layer has been penetrated, the circuit module (70) switches to the second power supply (92) to obtain the electrostatic voltage at the center point of the wafer (80) through the relationship curve (Vr). At this time, the second power supply (92) is controlled to apply a voltage in the direction of the electrostatic voltage to the wafer (80) through the circuit module (70) to neutralize the electrostatic charge on the surface of the wafer (80), thereby achieving the effect of quantitatively removing the electrostatic charge on the surface of the wafer (80).

[0069] Additionally, the method for removing static electricity from the surface of the wafer (80) further includes the step of controlling the connection time between the second power supply (92) and the circuit module (70) through a control module. Specifically, the second power supply (92) applies a second voltage to the wafer (80) for 0.5 seconds and then is cut off by the control module, which prevents the second voltage from being continuously applied and ultimately changing the voltage on the surface of the wafer (80) to the second voltage value.

[0070] In this method, the probe (50) measures the voltage of the wafer (80) more accurately by measuring the voltage of the wafer (80) during the process in which the electrostatic chuck (30) moves the wafer (80) together and performs optical positioning and correction. Since the wafer (80) is in the process of optical positioning and correction, the position of the measurement point after positioning can be derived by using the movement path of the electrostatic chuck (30) through the position of the probe (50) (i.e., the position of the measurement point before positioning). Since the position of the electron beam corresponds to the center position of the wafer (80) after positioning, a relationship curve (Vr) can be fitted using the above data, and the real-time electrostatic voltage of the wafer (80) surface can be obtained by combining the relationship curve (Vr) and the data obtained from the probe (50).

[0071] Although embodiments of the present application have been illustrated and described above, the embodiments are exemplary and should not be interpreted as limiting the present application, and those skilled in the art should understand that the embodiments may be changed, modified, substituted, and varied within the scope of the present application.

Claims

Claim 1 A wafer surface electrostatic removal device comprising: an electrostatic chuck (30); a circuit module (70); a first power source (91); and a second power source (92); wherein the circuit module (70) is connected to the electrostatic chuck (30), and the electrostatic chuck (30) is for fixing a wafer (80); the first power source (91) is controllably connected to the circuit module (70) so that a first voltage provided by the first power source (91) through the circuit module (70) can penetrate an oxide layer on the surface of the wafer (80); and the second power source (92) is controllably connected to the circuit module (70) so that a second voltage provided by the second power source (92) through the circuit module (70) can remove electrostatic charge on the surface of the wafer (80). Claim 2 A wafer surface electrostatic removal device according to claim 1, wherein the electrostatic chuck (30) comprises a chuck body (33), a first pin (31), a second pin (32), and a third power source (93), wherein the first pin (31) is provided on the chuck body (33) and connected to the third power source (93), and the third power source (93) is for supplying power to the chuck body (33) through the first pin (31), and the second pin (32) is provided on the chuck body (33) and is connected to a circuit module (70) at one end and contacts a wafer (80) at the other end. Claim 3 A wafer surface electrostatic discharge device according to claim 1, wherein the first voltage is higher than the second voltage, the first power source (91) is a high-voltage power source, and the second power source (92) is a programmable power source. Claim 4 A wafer surface electrostatic removal device according to claim 1, further comprising a probe (50) for detecting electrostatic voltage on the surface of the wafer (80). Claim 5 A wafer surface electrostatic removal device according to claim 2, wherein the circuit module (70) includes a first resistor (71), a second resistor (73), and a voltmeter (72), wherein a plurality of the first resistors (71) connected in series are connected in parallel to the wafer (80) conducted by the second pin (32), the voltmeter (72) is connected in parallel to a plurality of the first resistors (71) connected in series, and the first power source (91) or the second power source (92) is connected in series to the second resistor (73) and then controlled to be connected to the circuit module (70). Claim 6 A wafer surface electrostatic removal device according to claim 1, further comprising an optical camera (40) and a moving base (20), wherein the optical camera (40) is for determining the current position of the wafer (80), and the moving base (20) is equipped with the electrostatic chuck (30) and is for adjusting the position of the wafer (80) on the electrostatic chuck (30) to determine the optical position of the wafer (80). Claim 7 A wafer surface electrostatic removal device according to claim 5, further comprising a control module; wherein the control module is connected via communication with the voltmeter (72) and controls the connection or disconnection of the first power source (91) and the circuit module (70), and controls the connection or disconnection of the second power source (92) and the circuit module (70). Claim 8 A wafer surface electrostatic removal method implemented based on a wafer (80) surface electrostatic removal device according to any one of claims 1 to 7, comprising: a step of controlling the connection between the first power source (91) and the circuit module (70) so that a first voltage provided by the first power source (91) applies an electric shock to the oxide layer of the wafer (80); and a step of controlling the connection between the second power source (92) and the circuit module (70) so that a second voltage provided by the second power source (92) removes electrostatic charge on the surface of the wafer (80). Claim 9 A method for removing static electricity from a wafer surface according to claim 8, further comprising: a step of controlling the connection between the second power source (92) and the circuit module (70) so that the second voltage provided by the second power source (92) removes static electricity from the surface of the wafer (80), and, prior to the step of controlling the movement of the wafer (80) by the electrostatic chuck (30) to determine and correct the optical position of the wafer (80), a step of controlling the probe (50) to detect the measurement voltage on the surface of the wafer (80); a step of determining the distance between each measurement point and the center of the wafer (80) based on the position of the probe (50) and the electron beam and the movement path of the electrostatic chuck (30); and a step of fitting a relationship curve (Vr) between the measurement voltage of each measurement point, the distance of the measurement point, and the distance between the center of the wafer (80) based on the measurement voltage of each measurement point and the distance between each measurement point and the center of the wafer (80). Claim 10 A method for removing static electricity from a wafer surface according to claim 9, wherein the step of controlling the connection between the second power source (92) and the circuit module (70) so that the second voltage provided by the second power source (92) removes static electricity from the surface of the wafer (80) comprises: a step of controlling the connection between the second power source (92) and the circuit module (70); a step of obtaining a static electricity voltage at the center point of the wafer (80) through the relationship curve when the first voltage electrically penetrates the oxide layer of the wafer (80); and a step of removing static electricity from the surface of the wafer (80) by controlling the second power source (92) to apply a reverse voltage having an opposite charge with the same magnitude as the static electricity voltage at the center point of the wafer (80).

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