Reflective member including ion gate thin film transistor, electronic device, and operation method of the same

Abstract

According to various embodiments, a reflective member formed by a printing process may be provided, comprising: a substrate; and a layer comprising a plurality of unit cells for controlling the reflection angle of an incident signal as the impedance is adjusted based on applied power, wherein each of the plurality of unit cells comprises: a source, a drain, a gate, a channel formed between the source and the drain, and a polymer electrolyte electrically connected to the gate and the channel, wherein the polymer electrolyte is disposed on the channel, and when observed vertically for each of the plurality of unit cells, the polymer electrolyte does not overlap with the source and the drain.

Description

Technology Field

[0001] The present disclosure relates to a reflective member comprising an ion gate thin-film transistor, an electronic device, and a method of operating the same, and is intended to provide a reflective surface that can be formed by an efficient process (e.g., 3DP) and capable of adjusting the angle of refraction in an ultra-high frequency band (e.g., NR, 5G, 6G). Background Technology

[0003] In the early stages of 5G mobile communication technology, aiming to satisfy service support and performance requirements for enhanced Mobile BroadBand (eMBB), Ultra-Reliable Low-Latency Communications (URLLC), and massive Machine-Type Communications (mMTC), technologies such as beamforming and Massive MIMO to mitigate path loss and increase transmission distance in ultra-high frequency bands, support for various numerologies (such as the operation of multiple subcarrier spacings) and dynamic operation of slot formats for the efficient utilization of ultra-high frequency resources, initial access techniques to support multi-beam transmission and broadband, definition and operation of Band-Width Parts (BWP), Low Density Parity Check (LDPC) codes for high-volume data transmission, new channel coding methods such as Polar Codes for the reliable transmission of control information, and L2 pre-processing (L2 Standardization has been carried out for pre-processing, network slicing which provides a dedicated network specialized for specific services, and other methods.

[0004] Currently, discussions are underway to improve and enhance the performance of the initial 5G mobile communication technology, taking into account the services that the 5G mobile communication technology was intended to support. Additionally, standardization of the physical layer is in progress for technologies such as V2X (Vehicle-to-Everything), which helps autonomous vehicles make driving decisions and enhance user convenience based on their own location and status information transmitted by the vehicle; NR-U (New Radio Unlicensed), which aims for system operation in unlicensed bands to comply with various regulatory requirements; NR terminal low power consumption technology (UE Power Saving); Non-Terrestrial Network (NTN), which is direct terminal-satellite communication for securing coverage in areas where communication with the terrestrial network is impossible; and positioning.

[0005] In addition, standardization is underway in the field of wireless interface architecture / protocols for technologies such as the Industrial Internet of Things (IIoT) for supporting new services through linkage and convergence with other industries, Integrated Access and Backhaul (IAB) which provides nodes for expanding network service areas by integrating wireless backhaul links and access links, Mobility Enhancement including Conditional Handover and Dual Active Protocol Stack (DAPS) Handover, and 2-step Random Access (2-step RACH for NR) which simplifies random access procedures. Standardization is also underway in the field of system architecture / services for 5G baseline architectures (e.g., Service based Architecture, Service based Interface) for incorporating Network Functions Virtualization (NFV) and Software-Defined Networking (SDN) technologies, and Mobile Edge Computing (MEC), which provides services based on the location of the terminal.

[0006] When such 5G mobile communication systems are commercialized, connected devices, which are increasing explosively, will be connected to communication networks. Accordingly, it is expected that there will be a need to enhance the functionality and performance of 5G mobile communication systems and to integrate the operation of connected devices. To this end, new research is planned to be conducted on 5G performance improvement and complexity reduction, support for AI services, support for metaverse services, and drone communication using eXtended Reality (XR), Artificial Intelligence (AI), and Machine Learning (ML) to efficiently support Augmented Reality (AR), Virtual Reality (VR), and Mixed Reality (MR).

[0007] Furthermore, the advancement of these 5G mobile communication systems encompasses multi-antenna transmission technologies such as new waveforms to guarantee coverage in the terahertz band of 6G mobile communication technology, Full Dimensional MIMO (FD-MIMO), array antennas, and large-scale antennas; metamaterial-based lenses and antennas to improve terahertz band signal coverage; high-dimensional spatial multiplexing technology using OAM (Orbital Angular Momentum); and Reconfigurable Intelligent Surface (RIS) technology; as well as Full Duplex technology for enhancing frequency efficiency and system networks in 6G mobile communication technology; AI-based communication technologies that realize system optimization by utilizing satellites and AI from the design stage and internalizing end-to-end AI support functions; and the realization of services of complexity exceeding the limits of terminal computing capabilities by utilizing ultra-high-performance communication and computing resources. It could serve as a foundation for the development of next-generation distributed computing technologies. The problem to be solved

[0009] Since high-frequency band signals used in 5G / 6G mobile communication technology have strong directivity, if structures such as buildings are located in the propagation path, a coverage reduction problem may occur in which a shadow area is formed near the structure where the signal cannot be transmitted. Communication between a user terminal located in the shadow area and a base station may be difficult. According to various embodiments, a reflective member is provided to reflect a signal received from a base station to provide a signal to the shadow area, and a plurality of unit cells capable of impedance adjustment are formed in the reflective member to enable fine adjustment. In addition, according to various embodiments, a reflective member having large-area flexibility can be implemented based on a printing process with high process efficiency, thereby providing a highly practical reflective surface.

[0010] The problems that this application aims to solve are not limited to those described above, and problems not mentioned will be clearly understood by those skilled in the art from this specification and the attached drawings. means of solving the problem

[0012] According to various embodiments, a reflective member formed by a printing process may be provided, comprising: a substrate; and a layer comprising a plurality of unit cells for controlling the reflection angle of an incident signal as the impedance is adjusted based on applied power, wherein each of the plurality of unit cells comprises: a source, a drain, a gate, a channel formed between the source and the drain, and a polymer electrolyte electrically connected to the gate and the channel, wherein the polymer electrolyte is disposed on the channel, and when observed vertically for each of the plurality of unit cells, the polymer electrolyte does not overlap with the source and the drain.

[0013] According to various embodiments, an electronic device may be provided comprising: a processor; a communication circuit; and a reflective member comprising a substrate and a layer comprising a plurality of unit cells for adjusting the reflection angle of an incident signal as the impedance is adjusted based on applied power, wherein the processor is configured to: identify a group of unit cells to be activated among the plurality of unit cells when an event occurs through the communication circuit, and to apply power to a gate connected to a polymer electrolyte of each unit cell within the identified group of unit cells, and the reflection angle of an incident signal by a unit cell within the group of unit cells is adjusted based on the applied power.

[0014] The means for solving the problem are not limited to the means described above, and unmentioned means of solving will be clearly understood by those skilled in the art to which this application pertains from this specification and the attached drawings. Effects of the invention

[0016] According to various embodiments, a reflective surface is provided to reflect a signal received from a base station to provide a signal to a shaded area, and a plurality of unit cells capable of impedance adjustment are formed on the reflective surface to enable fine adjustment.

[0017] In addition, according to various embodiments, a reflective surface having large flexibility can be realized based on a printing process with high process efficiency, thereby providing a highly practical reflective surface. Brief explanation of the drawing

[0019] FIG. 1 is a drawing illustrating an example of an electronic device including a spraying member and a communication system including the same. FIG. 2 is a block diagram showing examples of components of an electronic device according to various embodiments. FIG. 3a is a drawing showing an example of a component of a reflective member according to various embodiments. FIG. 3b is a drawing showing another example of a component of a reflective member according to various embodiments. FIG. 4a is a drawing for illustrating a plurality of unit cells according to various embodiments. FIG. 4b is a drawing for illustrating an example of a unit cell of a first structure (e.g., a planar gate structure) according to various embodiments. FIG. 4c is a drawing illustrating an example of a unit cell of a second structure (e.g., a vertical gate structure) according to various embodiments. FIG. 4d is a drawing for illustrating examples of configurations that can be additionally formed in a unit cell according to various embodiments. FIG. 5a is a cross-sectional view of the A-axis and B-axis of a unit cell according to various embodiments, and a diagram illustrating an example of operation when a gate voltage is applied. FIG. 5b is a cross-sectional view of the A-axis and B-axis of a unit cell according to various embodiments, and a diagram illustrating an example of operation when a gate voltage is applied. FIG. 6a is a diagram illustrating an example of an equivalent circuit for describing a unit cell operating as an RF varactor according to various embodiments. FIG. 6b is a diagram showing examples of various parasitic components of a unit cell to explain the conditions under which the unit cell operates as an RF varactor. FIG. 7 is a drawing illustrating various embodiments of a unit cell having low resistance in a high-frequency environment according to various embodiments. FIG. 8 is a diagram showing a flowchart of a process for forming a reflective member according to various embodiments. FIG. 9 is a flowchart illustrating an example of an operation method of an electronic device for reflecting a received signal according to various embodiments. FIG. 10 is a drawing for illustrating examples of applied power according to various embodiments. FIG. 11 is a graph showing the S parameters of a unit cell by frequency band to explain a reflective member capable of operating at ultra-high frequencies according to various embodiments. FIG. 12 is an artificial intelligence model-based according to various embodiments. This is a flowchart illustrating an example of the operation method of an electronic device for reflecting a received signal. FIG. 13 is a diagram illustrating examples of learning of an artificial intelligence model according to various embodiments. Specific details for implementing the invention

[0020] Specific structural or functional descriptions regarding various embodiments are illustrative for the purpose of explaining various embodiments, and various embodiments may be implemented in various forms and should not be interpreted as being limited to the embodiments described in this specification or application.

[0021] Since various embodiments may be subject to various modifications and may take various forms, various embodiments are illustrated in the drawings and described in detail in this specification or application. However, the details disclosed in the drawings are not intended to specify or limit the various embodiments, and should be understood to include all modifications, equivalents, and substitutions that fall within the spirit and technical scope of the various embodiments.

[0022] Terms such as "first" and / or "second" may be used to describe various components, but said components shall not be limited by said terms. For the sole purpose of distinguishing one component from another, for example, without departing from the scope of rights according to the concept of the present disclosure, the first component may be named the second component, and similarly, the second component may be named the first component.

[0023] When it is stated that one component is "connected" or "connected" to another component, it should be understood that while it may be directly connected or connected to that other component, there may also be other components in between. Conversely, when it is stated that one component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between. Other expressions describing the relationship between components, such as "between" and "exactly between," or "adjacent to" and "directly adjacent to," should be interpreted in the same way.

[0024] The terms used herein are used merely to describe specific embodiments and are not intended to limit various embodiments. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as “comprising” or “having” are intended to specify the existence of the described features, numbers, steps, actions, components, parts, or combinations thereof, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0025] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this disclosure pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this specification.

[0026] The present disclosure will be described in detail below by explaining preferred embodiments of the present disclosure with reference to the attached drawings. Identical reference numerals in each drawing indicate identical components.

[0027] According to various embodiments, a reflective member formed by a printing process may be provided, comprising: a substrate; and a layer comprising a plurality of unit cells for controlling the reflection angle of an incident signal as the impedance is adjusted based on applied power, wherein each of the plurality of unit cells comprises: a source, a drain, a gate, a channel formed between the source and the drain, and a polymer electrolyte electrically connected to the gate and the channel, wherein the polymer electrolyte is disposed on the channel, and when observed vertically for each of the plurality of unit cells, the polymer electrolyte does not overlap with the source and the drain.

[0028] According to various embodiments, a reflective member may be provided, wherein the channel is formed to cover a portion of the upper portion of each of the source and the drain, and the first length of the channel of the polymer electrolyte in the direction from the source to the drain is formed to be smaller than the second length of the channel in the direction from the source to the drain.

[0029] According to various embodiments, a reflective member may be provided such that, upon vertical observation of each of the plurality of unit cells, one side of the polymer electrolyte contacts one side of the source and the other side of the polymer electrolyte contacts one side of the drain.

[0030] According to various embodiments, the gate may include a first portion and both ends of the first portion, and each of the two ends may be provided with a reflective member adjacent to the end of the source and the end of the drain.

[0031] According to various embodiments, a reflective member may be provided, wherein the source includes a second portion connected to the end of the source, the drain includes a third portion connected to the end of the drain, and the channel is formed between the second portion and the third portion.

[0032] According to various embodiments, a reflective member may be provided in which the width of the channel is greater than the width of the end.

[0033] According to various embodiments, a reflective member may be provided, wherein the layer comprises: a first layer including a plurality of unit cells; and a second layer including a transistor corresponding to each of the plurality of unit cells, and the activation state of each of the plurality of unit cells is controlled by the transistor of the second layer.

[0034] According to various embodiments, a reflective member may be provided such that the first drain of the transistor of the second layer is electrically connected to the gate of each of the plurality of unit cells.

[0035] According to various embodiments, a reflective member may be provided in which the power applied from the transistor to the gate changes linearly.

[0036] According to various embodiments, an electronic device may be provided comprising: a processor; a communication circuit; and a reflective member comprising a substrate and a layer comprising a plurality of unit cells for adjusting the reflection angle of an incident signal as the impedance is adjusted based on applied power, wherein the processor is configured to: identify a group of unit cells to be activated among the plurality of unit cells when an event occurs through the communication circuit, and to apply power to a gate connected to a polymer electrolyte of each unit cell within the identified group of unit cells, and the reflection angle of an incident signal by a unit cell within the group of unit cells is adjusted based on the applied power.

[0038] 1. Overview of System (1)

[0039] FIG. 1 is a drawing illustrating an example of an electronic device (10) including a spray member (100) and a communication system including the same.

[0040] As the demand for data from wireless communication devices increases, wireless communication technology is advancing rapidly. In 5th-generation (5G) wireless communication systems, ultra-high data transmission speeds have been achieved by utilizing the wide bandwidth of the millimeter wave (mmWave) band. Furthermore, wireless communication systems using mmWave enable the design of large-scale antenna arrays with high beamforming gain due to the shorter wavelengths at mmWave frequencies (compared to the microwave band). Despite the advantages of high gain, there is a problem of blind spots (S) (or coverage holes) in non-line-of-sight (NLOS) environments caused by the narrow beam width of large-scale arrays and low beam diffraction at high frequencies. Moreover, coverage hole issues are expected to emerge in 6th-generation (6G) wireless communication, and the use of sub-terahertz (sub-THz) frequencies, in addition to millimeter waves, is currently being discussed and actively researched.

[0041] Referring to FIG. 1, in a situation where a terminal (user equipment UE) is located in a shaded area (S), a reflective member (100) included in an electronic device (10) can reflect electromagnetic waves (S1) (or communication signals) coming from a base station (20a) (BS: base station) and / or a satellite (20b) in a desired direction to provide an alternative radio wave path (S2). An electronic device (10) including such a reflective member (100) can be placed on a structure (F) surrounding the shaded area (S), and since the reflective member (100) is flexible, implementation on the structure (F) can be easy. The reflective member (100) formed on the structure is one of the core technologies that can be implemented in a 6G communication system. Many studies are being conducted to demonstrate the possibility of creating a communication channel by the reflective member (100) when a radio wave path is blocked by an obstacle. Other research is also being conducted on the design of a unit cell structure that takes polarization into account for use in a multi-input multi-output (MIMO) transmission system based on a reflective member (100). A base station can transmit a control signal to control the control unit of the reflective member (100) and adjust the direction of reflection of the signal transmitted by the base station that is reflected from the reflective member (100), thereby allowing the signal transmitted by the base station to reach a terminal located in a coverage hole. Alternatively, not limited to the examples described, an electronic device (10) may adjust the direction of reflection based on location information of a user terminal (UE).

[0042] However, in order to implement a reflective member (100) in a commercial mobile communication system, various installation environments such as the location and polarization of the base station (20a), terminal (UE), and reflective member (100) must be considered. In particular, according to the path loss model, changes in the reflection phase due to the angle of incidence and the angle of reflection can be one of the main causes of performance degradation of the reflective member (100). Therefore, it is essential to design a reflective member (100) that is robust even under various angle changes. Securing wide beam steering while reducing the overall size of the reflective member (100) and using fewer RF components are also important factors to consider when discussing the introduction of the reflective member (100).

[0043] The aforementioned direction of reflection can be controlled based on the impedance control of each of the plurality of unit cells (U) included in the reflection member (100), and this will be described in detail later.

[0045] 2. Components of the electronic device (10)

[0046] FIG. 2 is a block diagram showing examples of components of an electronic device (10) according to various embodiments.

[0047] According to various embodiments, with reference to FIG. 2, the electronic device (10) may include a first processor (11), a communication circuit (12), a sensor (13), a power application device (14), a memory (15), and a reflective member (100) comprising a plurality of unit cells (U1, U2, ...).

[0048] According to various embodiments, the processor (11) can control the overall operation of the electronic device (10). To this end, the processor (11) can perform operations and processing of various information and control the operation of the components of the electronic device (10). According to one embodiment, as at least part of the data processing or operation, the processor (11) can store commands or data received from other components in volatile memory, process the commands or data stored in volatile memory, and store the resulting data in non-volatile memory. According to one embodiment, the processor (11) may include a main processor (not shown) (e.g., a central processing unit or an application processor) or an auxiliary processor (not shown) that can operate independently or together with it (e.g., a graphics processing unit, a neural processing unit (NPU), an image signal processor, a sensor hub processor, or a communication processor). For example, if the electronic device (10) includes a main processor (not shown) and an auxiliary processor (not shown), the auxiliary processor (not shown) may be configured to use less power than the main processor (not shown) or to be specialized for a designated function. The auxiliary processor (not shown) may be implemented separately from the main processor (not shown) or as part thereof.

[0049] According to one embodiment of the present application, an auxiliary processor (not shown) may control at least some of the functions or states associated with at least one component (e.g., communication circuit (12)) of the components of the electronic device (10), for example, on behalf of the main processor (not shown) while the main processor (not shown) is in an inactive (e.g., sleep) state, or together with the main processor (not shown) while the main processor (not shown) is in an active (e.g., application execution) state. According to one embodiment, the auxiliary processor (not shown) (e.g., image signal processor or communication processor) may be implemented as part of another functionally related component (e.g., communication circuit (12)). According to one embodiment, the auxiliary processor (not shown) (e.g., neural network processing unit) may include a hardware structure specialized for processing an artificial intelligence model. The artificial intelligence model may be generated through machine learning. Such learning may be performed, for example, on the electronic device (10) itself where the artificial intelligence is performed, or through a separate server (e.g., learning server). Learning algorithms may include, for example, supervised learning, unsupervised learning, semi-supervised learning, or reinforcement learning, but are not limited to the examples described above. An artificial intelligence model may include multiple artificial neural network layers.An artificial neural network may be a deep neural network (DNN), a convolutional neural network (CNN), a recurrent neural network (RNN), a restricted Boltzmann machine (RBM), a deep belief network (DBN), a bidirectional recurrent deep neural network (BRDNN), a deep Q-network, or a combination of two or more of the above, but is not limited to the examples described above. In addition to the hardware structure, the artificial intelligence model may include a software structure, either additionally or substantially.

[0050] Meanwhile, unless otherwise specifically mentioned in the following description, the operation of the electronic device (10) may be interpreted as being performed under the control of the processor (11).

[0051] According to various embodiments, the communication circuit (12) may communicate with an external device (e.g., base station (20a), satellite (20b), user terminal (UE)). For example, the communication circuit (12) may be connected to a network via wireless or wired communication to establish communication with an external device, thereby exchanging information and / or data through the established communication. As an example, the processor (11) may receive information for reflection (e.g., location of the terminal (UE), angle of reflection, location to be reflected) from the base station (20a) and / or satellite (20b) via the communication circuit (12). The base station (20a) and / or satellite (20b) may transmit information regarding the location received from the user terminal (UE) to the electronic device (10), and / or analyze the information regarding the location and transmit information regarding the angle of reflection or the location to be reflected to the electronic device (10). Also, as an example, the processor (11) may receive information about the location of the user terminal (UE) and / or information about the reflection angle or the location to be reflected calculated by the user terminal (UE) through a communication circuit (12). The wireless communication may include cellular communication using at least one of, for example, LTE, LTE-A (LTE Advance), CDMA (code division multiple access), WCDMA (wideband CDMA), UMTS (universal mobile telecommunications system), WiBro (Wireless Broadband), or GSM (Global System for Mobile Communications).According to one embodiment, wireless communication may include at least one of, for example, WiFi (wireless fidelity), Bluetooth, Bluetooth Low Energy (BLE), Zigbee, NFC (near field communication), Magnetic Secure Transmission, Radio Frequency (RF), or Body Area Network (BAN). According to one embodiment, wireless communication may include GNSS. GNSS may be, for example, GPS (Global Positioning System), Glonass (Global Navigation Satellite System), Beidou Navigation Satellite System (hereinafter "Beidou"), or Galileo, the European global satellite-based navigation system. Hereinafter, "GPS" may be used interchangeably with "GNSS" in this document. Wired communication may include at least one of, for example, USB (universal serial bus), HDMI (high definition multimedia interface), RS-232 (recommended standard 232), power line communication, or POTS (plain old telephone service). The network may include at least one of a telecommunications network, for example, a computer network (e.g., LAN or WAN), the Internet, or a telephone network.

[0052] According to various embodiments, the sensor (13) may be implemented to sense location information for a user terminal (UE) around an electronic device (10). For example, the sensor (13) may include at least one of a UWB sensor, a camera, a lidar, or a radar. The processor (11) may calculate the location of the user terminal (UE) based on the information received through the sensor (13).

[0053] According to various embodiments, the power application device (14) may be implemented to apply power (e.g., voltage, current) to the reflective member (100). The reflective member (100) may be implemented to reflect an incident signal at a specific reflection angle based on a refractive index formed based on the magnitude of the applied power. For example, the processor (11) may obtain information for reflection received from the base station (20a) (or satellite (20b)) and / or location information for the user terminal (UE), and by analyzing the obtained information based on the power control module (200) stored in the memory (15), calculate the unit cell to be activated among a plurality of unit cells within the reflective member (100) and the magnitude of the power to be applied. The processor (11) may control the power application device (14) to apply power to the reflective member (100) according to the calculated information.

[0055] 2.1. Components of the reflective member (100)

[0056] FIG. 3a is a drawing showing one example of a component of a reflective member (100) according to various embodiments. FIG. 3b is a drawing showing another example of a component of a reflective member (100) according to various embodiments.

[0057] According to various embodiments, the reflective member (100) can be formed based on a printing process. With the substrate (340) and the material of the unit cell (U) to be formed on the substrate (340) prepared, the reflective member (100) can be formed based on a drawing file provided to a 3D printing device. Since the substrate (340) can be implemented as a substrate with high rigidity as well as a substrate with high flexibility, the applicability of the reflective member (100) to various structures (F) in real life can be increased. At this time, the substrate (340) can be implemented as a small area as well as a large area depending on the purpose of use.

[0058] Referring to FIG. 3a, the reflective member (100) may include a refraction control layer (310) comprising a plurality of unit cells (U1, U2, ..., Un), an activation layer (320), a power application layer (330), and a substrate (340).

[0059] Each of the plurality of unit cells (U1, U2, ..., Un) included in the above-mentioned refraction control layer (310) may include an organic electrochemical transistor (OECT), as will be described later, and may include, for example, an ion gate transistor. The impedance of the unit cell (U) is controlled according to the magnitude of the power applied to the ion gate transistor, and the refractive index (or reflection angle) of the signal incident on the unit cell (U) can be controlled accordingly. As will be described later, whether power is applied to the gate (G) of the ion gate transistor of the unit cell (U) can be determined by the activation layer (320), so the above-mentioned refraction control layer (310) may be defined as a passive pattern layer.

[0060] The activation layer (320) is positioned below the refraction control layer (310) and can be implemented to control the activation state of each of the plurality of unit cells (U1, U2, ..., Un). The activation state includes an ON state and an OFF state, where the ON state means a state in which power is applied to the unit cell (U) (e.g., power is applied to the gate (G) of an ion gate transistor), and the OFF state means a state in which power is not applied to the unit cell (U). For example, referring to FIGS. 3a and 3b, the activation layer (320) includes a transistor corresponding to each of the plurality of unit cells (U1, U2, ..., Un), and the output terminal (e.g., drain) of the transistor can be electrically connected to each of the plurality of unit cells (U1, U2, ..., Un). For example, the output terminal (e.g., drain) of the transistor may be electrically connected to the gate (G) of the ion gate transistor of the unit cell (U). Accordingly, the magnitude of the power (e.g., current, voltage) applied to the gate of the unit cell (U) may be controlled based on the current output from the transistor, thereby determining the activation state of the unit cell (U). The transistor may be defined as a synaptic transistor, and the impedance (or reflection angle) may be finely controlled as the current is applied analogously (or continuously) to the unit cell (U). The activation layer (320) may be defined as an active pattern layer in that it can control the activation state of the unit cell (U) of the aforementioned refraction control layer (310).

[0061] The power application layer (330) is positioned below the activation layer (320) and can apply power to the aforementioned refraction control layer (310) and / or activation layer (320). For example, referring to FIG. 3b, the power application layer (330) can be implemented to apply power to the source (S) and drain (D) of the ion gate transistor of the refraction control layer (310) and to apply power to the gate (G) and source (S) of the transistor of the activation layer (320).

[0062] Meanwhile, referring to FIG. 3b, a single layer (400) capable of performing all the functions of the aforementioned refraction control layer (310), activation layer (320), and power application layer (330) may be formed according to the printing process. The single layer (400) may include unit cells (U1, U2, ..., Un), activation elements (S1, S2, ..., Sn) for controlling the activation state of each of the unit cells (U1, U2, ..., Un) (e.g., the aforementioned synaptic transistor), and wiring members (P1, P2, ..., Pn) for power application.

[0064] 2.1.1. Structure of the Unit Cell (U)

[0065] FIG. 4a is a drawing for illustrating a plurality of unit cells according to various embodiments. FIG. 4b is a drawing for illustrating an example of a unit cell of a first structure (e.g., a planar gate structure) according to various embodiments. FIG. 4c is a drawing for illustrating an example of a unit cell of a second structure (e.g., a vertical gate structure) according to various embodiments. FIG. 4d is a drawing for illustrating an example of a configuration that can be additionally formed in a unit cell (U) according to various embodiments. FIG. 5a is a drawing for illustrating a cross-sectional view of the unit cell (U) along the A-axis and B-axis, and an example of operation when a gate voltage is applied, according to various embodiments. FIG. 5b is a drawing for illustrating a cross-sectional view of the unit cell (U) along the A-axis and B-axis, and an example of operation when a gate voltage is applied, according to various embodiments.

[0066] According to various embodiments, the unit cell (U) may include an ion gate transistor having an under-wrap channel structure. Based on the under-wrap structure, the unit cell (U) may be implemented to operate with low resistance in an ultra-high frequency communication environment to control the reflection angle while maintaining the quality of the incident signal.

[0067] According to various embodiments, with reference to FIG. 4a, a signal (S1) can be received from a base station (20a) to a plurality of unit cells included in a refraction control layer (310). The coverage of the signal (S1) can cover all of the plurality of unit cells. At this time, as the activation state of a unit cell group (A) in a portion of the plurality of unit cells is controlled to be ON, a reflected signal (S2) can be output at a specific reflection angle.

[0068] According to various embodiments, FIGs. 4b to 4c show the structure of a specific unit cell (U).

[0069] Referring to FIG. 5a, the unit cell (U) may include an ion gate transistor comprising a gate (G), a source (S), a drain (D), a channel (C) formed between the source (S) and the drain (D), and a polymer electrolyte (E) electrically contacted to the gate (G) and the channel (C).

[0070] The gate (G), source (S), and drain (D) can be formed from a metal material (e.g., copper, gold) by a printing process. Charge can be moved through the channel (C) by power (e.g., voltage, current) applied between the source (S) and the drain (D).

[0071] Referring to FIG. 4b, the gate (G) is formed in a "C" shape including a portion where both ends are formed, wherein one end of the two ends is adjacent to the source (S) and the other end is adjacent to the drain (D), and the polymer electrolyte (E) is formed on the first portion in the longitudinal direction between the two ends so that it can be electrically connected to the channel (C) through the polymer electrolyte (E). As it is formed in the "C" shape, a space partitioned by the gate (G) is formed, and the space may be rectangular. Referring further to FIG. 3c, a unit cell (U) may be formed so that a portion (G') of the gate (G) is further disposed on the polymer electrolyte (E). The portion (G') of the gate (G) may be implemented in a form that extends along the electrolyte (E). As shown in FIG. 5a, the structure of a unit cell (U) in which the gate (G) is placed only on a plane is defined as a planar gate structure, and the structure of a unit cell (U) in which a part (G') of the gate is placed on the upper part of the electrolyte (E) can be defined as a vertical gate structure. Each of the source (S) and the drain (D) is formed in a “T” shape including a part where one end is formed (e.g., a second part, a third part), and the one end is connected to a structure for power application (e.g., a power application layer (330)), and the part may be in contact with a channel (C). Charge may be transferred through the channel (C) formed between both parts (e.g., a second part, a third part) of the source (S) and the drain (D), and as will be described later, this may be due to ions provided through the polymer electrolyte (E). At this time, both parts of the source (S) and the drain (D) are placed in the space partitioned by the gate (G), and each of the ends can be placed adjacent to the end of the gate (G).Accordingly, the width of both parts of the source (S) and the drain (D) is formed wider than the width of the ends of the source (S) and the drain (D), and accordingly, the width of the channel (C) is also formed wider so that the amount of charge movement can be controlled significantly.

[0072] The above channel (C) can be implemented with a material capable of allowing the movement of ions (e.g., cations or anions) contained in the polymer electrolyte (E).

[0073] For example, the above channel (C) is (3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS), Polypyrrole, polythiophene, polyphenylene, polyphenylene vinylene, poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:TOS), poly(6-(thiophene-3-yl)hexane-1-sulfonate) tetrabutylammonium (PTHS), poly(4-(2,3-dihydrothieno[3,4-b][1,4]dioxin-2-yl-methoxy)-1-butanesulfonic acid) (PEDOT-S), poly(2-(3,3′-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)-[2,2′-bithiophene]-5-yl)thieno[3,2-B]thiophene) (p(g2T-TT)), and poly((ethoxy)ethyl It may include one or more selected from the group consisting of 2-(2-(2-methoxyethoxy)ethoxy)acetate)-naphthalene-1,4,5,8-tetracarboxyl-diimide-co-3,3′-bis(2-(2-methoxyethoxy)ethoxy)ethoxy)-(bitiophene))(p(gNDI-g2T)). When the channel (C) is implemented as an organic material of a conductive polymer (e.g., PEDOT:PSS), it may operate as an ionic device as the channel (C) is doped / dedoped by a polymer electrolyte (E) containing various cations such as K+, Ca2+, Na+, and H+.

[0074] Also, for example, the above channel (C) is TiO x , TaOx , HfO x , WO x , CuO x , NbO x It can be implemented based on related inorganic semiconductor materials such as PCMO. In this case, it can be operated as an ion device by controlling the oxygen vacancy of the channel (C).

[0075] Referring to FIGS. 5a and 5b, the channel (C) is formed higher than the height of the source (S) and drain (D), and the portion formed higher than the height of the source (S) and drain (D) may be placed on at least a portion of both the source (S) and drain (D). Accordingly, the channel (C) may be formed with a length (Lc) greater than the distance between the source (S) and drain (D), and electrical stability may be formed.

[0076] The polymer electrolyte (E) is a solid electrolyte containing ions (e.g., cations or anions), and may be implemented, for example, as an organic material containing ions, or formed through a passivation process based on an ionic liquid / ionic gel material. For example, the polymer electrolyte (E) may be a sulfide-based material [Li10GeP2S12, Li9.54Si1.74P1.44S11.7Cl0.3, Argyrodite, LPS(Lithium phosphorus sulfide), LPS + LiCl], an oxide-based material [Perovskite, NASICON(Na1+xZr2SixP3-xO12, 0 <x<3), LISICON(Li2+2xZn1-xGeO4), LiPON(LixPOyNz), Garnet] 또는 이온 전도성 폴리머[PEO(Polyethylene oxide), PEG(Polyethylene glycol), PEGDMA(Polyethylene glycol dimethacrylate), PTFE(Polytetrafluoroethylene), PEEK(Polyether ether ketone), Nafion(C7HF13O5S·C2F4)] 중 적어도 하나의 물질을 포함하는 것을 특징으로 할 수 있다.

[0077] Referring to (a) of FIG. 4d, a structure for optimally controlling the capacitance formed in the unit cell (U) of the two structures (e.g., planar gate structure, vertical gate structure) may be further formed. For example, when the gate (G) is implemented with a metal material such as Au, Pt, or Ag, a capacitance of nF to μF (e.g., electric double layer capacitance) may be formed in the part where the gate (G) and the polymer electrolyte (E) are in contact, and a volumetric capacitance of tens of μF may be formed in the part where the drain (D) / source (S) and the channel (C) implemented with a conductive polymer (e.g., PEDOT:PSS) are in contact, and a difference may occur. At this time, as shown in (a) of FIG. 5c, by forming a conductive polymer (510) on the lower part of the gate (G), the capacitance formed on the lower part of the gate (G) has a value of several tens of μF, and the values ​​of the two capacitances correspond to each other, so that more effective gating can be made.

[0078] Also, referring to FIG. 4d (b), channel conductivity can be controlled by forming a membrane (520) between the channel (C) and the polymer electrolyte (E) that allows only specific ions contained in the polymer electrolyte (E) to move, for channel resistance control through selective ion doping / dedoping. At this time, the membrane (520) that allows only specific ions to move can be formed to implement a sensor for a target substance (e.g., specific ions).

[0079] Referring to FIG. 5a, in the case of a unit cell (U) of a planar gate structure, ions can move to the aforementioned channel (C) based on the voltage applied to the gate (G). For example, when a positive voltage is applied to the gate (G), positive ions can move to the channel (C), thereby controlling the amount of charge movement flowing through the channel (C), and consequently, the impedance described with reference to FIG. 5a (b) can be adjusted. Accordingly, referring to FIG. 5a (a) and FIG. 5a (b), the reflection parameter (S 11 ) changes, and accordingly, the angle of reflection for the incident signal can be adjusted.

[0080] Also, referring to FIG. 5b, in the case of a unit cell (U) of a vertical gate structure, as ions move into the channel (C) as in the unit cell (U) of the planar gate structure described above, the reflection parameter (S 11 ) changes, and accordingly, the angle of reflection for the incident signal can be adjusted.

[0081] According to various embodiments, the length (Le) of the polymer electrolyte (E) can be determined to limit parasitic capacitance and to form a low channel (C) resistance in an ultra-high frequency environment. The length (Le) of the polymer electrolyte (E) can be formed to be smaller than the channel length (Lc) and to maximize the area through which ions can penetrate. That is, when viewed perpendicularly to the unit cell (U), it may not overlap with the source (S) and the drain (D). For example, when viewed perpendicularly, it can be formed with a length (Le) such that one side of the polymer electrolyte (E) contacts the side of the source (S) and the other side of the polymer electrolyte (E) contacts the side of the drain (D). In other words, the length (Le) of the polymer electrolyte (E) can correspond to the distance (Lch) between the source (S) and the drain (D). Accordingly, the formation of parasitic caps due to the overlap of the polymer electrolyte (E) is limited, and the low resistance of the channel (C) can be maintained. In this case, in the case of a unit cell (U) with a vertical gate structure, additionally, the length (Lg) of the gate (G) can correspond to the distance (Lch) between the source (S) and the drain (D).

[0082] In addition, in the case of a unit cell (U) of a vertical gate structure, the area where a part (G') of the gate (C) and the polymer electrolyte (E) overlap can be formed to be larger than the area where a part (G') of the gate (C) and the channel (C) overlap. Accordingly, the voltage applied in the direction of the channel (C) by the part (G') of the gate (C) is effectively transmitted, and the conductivity of the channel (C) can be smoothly controlled.

[0084] 2.1.2. Equivalent Circuit of Unit Cell (U) and Operation as RF Varactor

[0085] FIG. 6a is a diagram illustrating an example of an equivalent circuit for describing a unit cell (U) operating as an RF varactor according to various embodiments. FIG. 6b is a diagram showing examples of various parasitic components of a unit cell (U) to explain the conditions under which the unit cell (U) operates as an RF varactor.

[0086] According to various embodiments, the RF varactor is a semiconductor device that operates as a variable capacitor, and depending on the adjustment of the capacitance, the reflection parameter (S 11 ) changes, and accordingly, the reflection angle of the incident signal can be adjusted. Each of the aforementioned unit cells (U) can operate as the RF varactor, and this will be explained in detail with reference to FIGS. 7a and 7b.

[0087] Referring to (a) of FIG. 6a above, the unit cell (U) can be interpreted as an equivalent circuit including a first capacitor (C1), a variable resistor (Rv) connected in parallel with the first capacitor (C1), a second capacitor (C2), and an inductor (L) when a high-frequency AC signal is input. The variable resistor (Rv) is determined by a DC signal applied to a gate (G). When the voltage applied to the gate (G) is greater than or equal to a threshold value and the channel conductivity is turned ON, the value of the variable resistor (Rv) is formed to be small, and when the voltage applied to the gate (G) is less than a threshold value and the channel conductivity is turned OFF, the value of the variable resistor (Rv) can be formed to be a relatively large value (e.g., infinity).

[0088] At this point, referring to (b) to (c) of FIG. 6a, the resonant frequency (fc) of the equivalent circuit can be calculated by [Equation 1] below, and in particular, can be changed depending on the magnitude of the variable resistor (Rv). That is, the resonant frequency (fc) of the equivalent circuit can be changed depending on the state of the channel (C) (e.g., ON / OFF) determined by the voltage applied to the gate (G) and the conductivity of the channel (C). The resonant frequency (fc) is the S-parameter (e.g., reflection parameter (S)) for each frequency band of the unit cell (U). 11 It determines )) and, that is, can determine the reflection angle of the RF signal incident on the unit cell (U).

[0089] [Mathematical Formula 1]

[0090]

[0091] For example, as shown in (b) of FIG. 6a, when the state of the channel (C) is OFF and the impedance of the variable resistor (Rv) is much greater than the impedance of the first capacitor (C1), current flows through the first capacitor (C1) and no current flows through the variable resistor (Rv), so that the capacitance of the first capacitor (C1) and the capacitance of the second capacitor (C2) can be used as the total capacitance (Ctotal) to calculate the resonant frequency (fc).

[0092] For example, as shown in (c) of FIG. 6a, when the state of the channel (C) is turned ON and the impedance of the variable resistor (Rv) becomes smaller than the impedance of the first capacitor (C1), relatively little current flows through the first capacitor (C1) or no current flows through it, while current flows through the variable resistor (Rv). In this case, the inductance of the entire circuit changes, and the resonant frequency (fc) may change.

[0093] That is, the resonant frequency (fc) can be determined by the value of the variable resistor (Rv), which is determined according to the state and conductivity value of the channel (C). Accordingly, as the phase is controlled (e.g., S-parameters per frequency band (e.g., reflection parameters (S 11 The reflection angle can be adjusted by controlling the unit cell (U). That is, the unit cell (U) can operate as an RF ion varactor.

[0094] FIG. 6b shows an equivalent circuit of a unit cell (U) for the unit cell (U) to ideally transmit an RF signal as an RF ion varactor. The equivalent circuit includes an ion resistor (Rion) and a double-layer capacitor (C) formed between the source (S) / drain (D) / gate (G) and the polymer electrolyte (E). EDL ), a capacitor (C) formed between the source (S) and the drain (D). SD ) and channel resistance (R Channel It may include ).

[0095] At this time, ideally, to transmit the RF signal, the channel resistance (R Channel The inductance of the ionic resistance (Rion) and double-layer capacitor (C) formed between the source (S) / drain (D) and the polymer electrolyte (E), respectively. EDL It may need to be lower than the inductance of ). To this end, the ionic resistance (Rion) must be set to a high value; however, since a higher ionic resistance (Rion) may result in a slower speed in determining the channel state by applying a DC voltage to the gate (G), the ionic resistance (Rion) may have an appropriate upper limit value. That is, the upper limit value of the ionic resistance (Rion) can be determined according to the target speed of changing the channel state. Also, the double-layer capacitor (C EDL A polymer electrolyte layer (E) can be used so that ) is not observed in a high-frequency RF environment.

[0097] 2.1.2. Various Implementation Examples of Unit Cells (U)

[0098] FIG. 7 is a drawing illustrating various embodiments of a unit cell (U) having low resistance in a high-frequency environment according to various embodiments.

[0099] According to various embodiments, the length (Lg) of the polymer electrolyte (E) may be determined to form a low resistance of the channel (C) as described above, but the unit cell (U) may be implemented in various ways other than such that the length (Lg) is smaller than the length (Lc) of the channel, and one side of the polymer electrolyte (E) is in contact with the side of the source (S) and the other side of the polymer electrolyte (E) is not in contact with the side of the drain (D).

[0100] For example, referring to FIG. 7(a), if the channel (C) is formed to include a PEDOT:PSS material, the conductivity of the channel (C) can be increased (i.e., the resistance can be lowered) by increasing the proportion of PEDOT. Since PEDOT substantially acts as a pathway for charge transfer, methods to increase conductivity by increasing the proportion of PEDOT can be performed by removing PSS along with the additives during drying based on the additives. As an example, the channel conductivity can be increased by adding a polar organic solvent, such as DMSO (dimethyl sulfoxide), EG (ethylene glycol), or glycerol, to the channel (C). At this time, the addition of ionic liquids or surfactants is also possible, not limited to the examples described, and the conductivity can be controlled according to the concentration added. At this time, the addition of the polar organic solvent can be performed through post-treatment (e.g., acid treatment) while the channel (C) is immersed in the solution. Since the concentration of the solvent added to the channel (C) can be controlled according to the above dipping time, the conductivity of the channel (C) can be controlled. In addition, by performing a secondary coating on the channel (C) to create a bilayer state, the resistance of the channel (C) can be reduced and the conductivity can be increased.

[0101] For example, referring to Fig. 7(b), if there are regions (C1, C2) of the channel (C) that are not covered by the polymer electrolyte (E), a method of improving the conductivity of only the regions (C1, C2) of the channel (C) that are not covered by the polymer electrolyte (E) may be performed using the methods described above with reference to Fig. 7(a).

[0103] 3. Printing process of the reflective member (100)

[0104] FIG. 8 is a diagram showing a flowchart of a process for forming a reflective member (100) according to various embodiments. However, the operations may be performed in a different order than the described and / or illustrated operations, and more or fewer operations may be performed than the described and / or illustrated operations.

[0105] According to various embodiments, the process method may include the step (801) of preparing materials and drawings, and the step (803) of forming at least one layer (e.g., layers (310 to 330), or a single layer (400)) on a substrate (340) by 3D printing. Since the substrate (340) can be implemented as a substrate with high rigidity as well as a substrate with high flexibility, the applicability of the reflective member (100) to various structures (F) in real life can be increased. At this time, the substrate (340) can be implemented as a small area as well as a large area depending on the purpose of use.

[0107] 4. Method of operating the electronic device (10)

[0108] 4.1 Signal Reflection Action

[0109] FIG. 9 is a flowchart illustrating an example of an operation method of an electronic device (10) for reflecting a received signal according to various embodiments. However, operations may be performed in a different order than the described and / or illustrated operations, and more or fewer operations may be performed than the described and / or illustrated operations. FIG. 9 will be further described below with reference to FIG. 10 and FIG. 11.

[0110] FIG. 10 is a diagram illustrating examples of applied power according to various embodiments. FIG. 11 is a graph showing S parameters of a unit cell (U) by frequency band to illustrate a reflective member capable of operating even at ultra-high frequencies according to various embodiments.

[0111] According to various embodiments, the electronic device (10) can determine whether an event has occurred in operation 901. For example, the event may include communication events such as an event in which a communication signal is received from a base station (20a) (or a satellite (20b)) and an event in which a communication signal is received from a terminal (UE). For example, the event may include an event in which a terminal (UE) is identified to have entered within a preset distance from the electronic device (10) using a sensor (13) of the electronic device (10).

[0112] According to various embodiments, the electronic device (10) can activate the state of a unit cell group corresponding to a specific area (A) among a plurality of unit cells (U1, U2, ..., Un) of the reflective member in operation 903 when an event occurs (901-Y), and apply power to the activated unit cell group of the reflective member in operation 905. For example, as described above, the electronic device (10) can provide power by determining the specific area (A) to be activated among a plurality of unit cells (U1, U2, ..., Un) and the magnitude of the power to be applied based on information (e.g., information about location, or information about reflection angle) received from the base station (20a) (or satellite (20b)) and / or the terminal (UE). The electronic device (10) can provide the signal received from the base station (20a) (or satellite (20b)) to the terminal (UE) by reflecting it through the activated unit cell group. The electronic device (10) can receive information regarding RSSI from the terminal (UE), and if the RSSI is identified as being greater than or equal to a preset value, it can determine that the reflection angle has been successfully adjusted and maintain the reflection angle. If the RSSI is less than or equal to a preset value, the electronic device (10) can adjust the magnitude of the power applied to the continuously activated unit cell. Referring to FIG. 11, it can be seen that the range of available impedance is large even in the ultra-high frequency band. Accordingly, it can be seen that the reflection angle adjustment in the ultra-high frequency band is easy.

[0113] According to various embodiments, the electronic device (10), with reference to FIG. 10, can adjust the magnitude of power applied gradually (or continuously or linearly). As described above, the electronic device (10) can utilize a transistor (e.g., a synaptic transistor) of an activation layer (320) when applying power to a unit cell (U). The electronic device (10) uses a power application device (14) to control the magnitude and / or width of a pulse and provides it to the power application layer (330), and power that is linearly converted through the output terminal (e.g., drain) of the transistor included in the activation layer (320) can be applied to the unit cell (U) (e.g., the gate (G) of an ion gate transistor). Accordingly, the reflection angle can be adjusted more finely.

[0114] According to various embodiments, the electronic device (10) can control the channel conductivity of the cells to form a target reflection angle by providing a pulse voltage determined based on a learned artificial intelligence model to a power application layer (330), in addition to a method of individually controlling the impedance of the unit cell (U). For example, the channel conductivity may be changed analogously (or continuously) depending on the number (or width) of the pulse voltages. Since the channel conductivity is associated with the target reflection angle, the artificial intelligence model may be learned with the target reflection angle as input and the number (or width) of the pulse voltages as output. To form a target reflection angle, the electronic device (10) may provide the corresponding pulse voltage to the power application layer (330) when the number (or width) of the pulse voltages is determined by inputting information about the target reflection angle into a pre-learned artificial intelligence model.

[0116] 4.2 Artificial Intelligence Model-Based Reflex Control

[0117] FIG. 12 is an artificial intelligence model-based according to various embodiments. This is a flowchart for explaining an example of the operation method of an electronic device (10) for reflecting a received signal. However, the operations may be performed in a different order than the described and / or illustrated operations, and more or fewer operations may be performed than the described and / or illustrated operations.

[0118] FIG. 13 is a diagram illustrating examples of learning of an artificial intelligence model according to various embodiments.

[0119] According to various embodiments, the electronic device (10) determines whether an event occurs in operation 1201, and if an event occurs (1201-Y), obtains information for reflection control based on an artificial intelligence model in operation 1203. For example, referring to FIG. 13, when a plurality of terminals (UE1, UE2, UE3) are positioned at various locations relative to the reflection control member (100), the electronic device (10) can provide a reflection signal for each of the plurality of terminals (UE1, UE2, UE3) and collect information regarding RSSI from the plurality of terminals (UE1, UE2, UE3). At this time, when the RSSI is greater than or equal to a preset intensity, information regarding the location (e.g., angle, distance), activated unit cell area, and magnitude of applied power for each terminal can be collected. The collected information is processed into training data, and for example, for the training of an artificial intelligence model (1300), the location of each terminal (e.g., angle, distance) is set as input data, and the activated unit cell area and the magnitude of the applied power can be set as output data. Based on the training data, the artificial intelligence model (1300) can be trained based on a well-known learning algorithm (e.g., machine learning, deep learning), and the artificial intelligence model (1300) can be implemented to output information regarding the activated unit cell area and the magnitude of the applied power when information regarding the location of each terminal (e.g., angle, distance) is input. Accordingly, the electronic device (10) can input information (e.g., information regarding location) received from the base station (20a) (or satellite (20b)) and / or the terminal (UE) into the artificial intelligence model (1300) when the aforementioned event occurs, and obtain information regarding the unit cell area and the magnitude of the applied power.

[0120] According to various embodiments, the electronic device (10) can activate the state of a unit cell group corresponding to a specific area among a plurality of unit cells of a reflective member based on information obtained in operation 1205 (e.g., information about a unit cell area), and can apply power to the activated unit cell group of the reflective member based on information obtained in operation 1207 (e.g., information about the magnitude of power to be applied). Since operations 1205 to 1207 of the electronic device (10) can be performed in the same way as operations 903 to 905 of the electronic device (10), a redundant description is omitted.

Claims

Claim 1 A reflective member formed by a printing process, comprising: a substrate; and a layer comprising a plurality of unit cells for controlling the reflection angle of an incident signal as the impedance is adjusted based on applied power; wherein each of the plurality of unit cells comprises: a source, a drain, a gate, a channel formed between the source and the drain, and a polymer electrolyte electrically connected to the gate and the channel, wherein the polymer electrolyte is disposed on the channel, and wherein, upon vertical observation of each of the plurality of unit cells, the gate does not overlap with the region of the source and the region of the drain. Claim 2 A reflective member according to claim 1, wherein the channel is formed to cover a portion of the upper portion of each of the source and the drain, and the first length of the channel from the source to the drain direction of the gate is formed to be smaller than the second length of the channel from the source to the drain direction. Claim 3 A reflective member according to claim 2, wherein, upon vertical observation of each of the plurality of unit cells, one side of the gate contacts one side of the source and the other side of the gate contacts one side of the drain. Claim 4 A reflective member according to claim 1, wherein the polymer electrolyte comprises a first portion and both ends of the first portion, each of which is adjacent to the end of the source and the end of the drain. Claim 5 A reflective member according to claim 4, wherein the source includes a second portion connected to the end of the source, the drain includes a third portion connected to the end of the drain, and the channel is formed between the second portion and the third portion. Claim 6 In claim 5, the width of the channel is greater than the width of the end of the source and the width of the end of the drain, a reflective member. Claim 7 In claim 4, a portion of the gate is disposed on the polymer electrolyte, a reflective member. Claim 8 A reflective member according to claim 1, wherein the state of the channel is determined by a DC voltage applied to the gate, and the reflection angle of the RF signal is adjusted as the resonance frequency associated with each of the plurality of unit cells is determined according to the state of the channel. Claim 9 A reflective member according to claim 8, wherein the inductance due to the resistance of the channel is formed to be smaller than the inductance due to the capacitor and ion resistance formed between the source or the drain and the polymer electrolyte. Claim 10 In claim 9, the value of the ion resistance is determined according to the target rate of change of the state of the channel based on the DC voltage applied to the gate, a reflective member.

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