Substrate bonding device

Abstract

The present disclosure relates to a substrate bonding device, wherein the substrate bonding device comprises a first bonding chuck supporting a first substrate, a second bonding chuck disposed opposite to the first bonding chuck and configured to support a second substrate, and a flow pressure control unit disposed near the outer periphery of the first bonding chuck and controlling the flow pressure within the bonding space between the first bonding chuck and the second bonding chuck.

Description

Technology Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and more specifically, to a substrate bonding apparatus. Background Technology

[0002] In the manufacturing process of semiconductor devices, bonding between substrates can increase the mounting density of semiconductor chips and shorten wiring lengths, thereby enabling high-speed signal processing. In particular, for stacked semiconductor modules, bonding at the wafer level and then cutting, rather than at the chip level, can be advantageous in terms of productivity.

[0003] This bonding process is generally performed using a wafer-to-wafer method that directly joins two substrates, utilizing a bonding chuck that supports and pressurizes the substrates. For example, depending on the type of wafer to be bonded, the bonding method can be broadly classified into Hybrid Copper Bonding (HCB) and Fusion Bonding. In particular, in HCB bonding, the alignment error between the copper pads of the upper and lower substrates—that is, the bonding overlay—is a key management indicator and can be evaluated by factors such as movement, rotation, and runout.

[0004] The aforementioned run-out refers to the degree of wafer expansion resulting from radial error. To compensate for this, a method is used to stretch the substrate by expanding the lower deformation chuck using pneumatic pressure; however, this method has limitations, such as a restricted deformation range of the upper wafer and the ability to perform only isotropic deformation caused by pneumatic pressure. Consequently, it is difficult to compensate for anisotropic expansion, leading to the problem of having to rely on other processes. The problem to be solved

[0005] The technical problem that the present disclosure aims to solve is to provide a substrate bonding device capable of expanding the deformation range of the upper and lower substrates.

[0006] Another technical problem that the present disclosure aims to solve is to provide a substrate bonding device capable of precisely controlling isotropic and anisotropic run-out. means of solving the problem

[0007] According to one embodiment of the present disclosure, a substrate bonding device may include a first bonding chuck supporting a first substrate, a second bonding chuck disposed opposite to the first bonding chuck and configured to support a second substrate, and a flow pressure control unit disposed near the outer periphery of the first bonding chuck and controlling the flow pressure within the bonding space between the first bonding chuck and the second bonding chuck.

[0008] According to another embodiment of the present disclosure, a substrate bonding device may include a first bonding chuck that supports a first substrate and includes a first base portion having a vacuum groove, a deformation plate disposed on the first base portion such that the distance from the first base portion is variable, and a power application portion that deforms the deformation plate, a second bonding chuck including a second base portion disposed opposite to the first bonding chuck and a second substrate fixing portion disposed on the second base portion, a flow pressure control portion disposed adjacent to the side of the first bonding chuck and including a plurality of flow pressure control units disposed segmentally along the outer periphery of the first bonding chuck to control the flow pressure within the bonding space between the first bonding chuck and the second bonding chuck, and a control portion that individually controls the flow pressure control units. Effects of the invention

[0009] According to one embodiment of the present disclosure, a substrate bonding device includes a flow pressure control unit that controls the flow pressure of the bonding space, thereby controlling the deformation of the upper substrate and expanding the deformation range of the upper substrate and the lower substrate.

[0010] According to another embodiment of the present disclosure, a substrate bonding device can precisely control isotropic or anisotropic run-out of a substrate by individually controlling a flow pressure control unit comprising a plurality of flow pressure control units. Brief explanation of the drawing

[0011] FIG. 1 is a schematic diagram of a substrate bonding apparatus according to one embodiment of the present disclosure. Figure 2 is a cross-sectional view taken along the line AA' of Figure 1. Figures 3 and 4 are enlarged views of the P1 area of ​​Figure 2. Figure 5 is a plan view cut along the BB' line of Figure 1. FIGS. 6 to 8 are plan views of various embodiments cut along the BB' line of FIG. 1. FIG. 9 illustrates the driving process of a flow pressure control unit according to one embodiment of the present disclosure. FIG. 10 illustrates the driving process of a flow pressure control unit according to another embodiment of the present disclosure. FIG. 11 illustrates the driving process of a flow pressure control unit according to another embodiment of the present disclosure. FIGS. 12 and FIGS. 13 are cross-sectional views of various embodiments cut along the line AA' of FIG. 1. Specific details for implementing the invention

[0012] Hereinafter, various embodiments of the present disclosure are described in detail with reference to the attached drawings so that those skilled in the art can easily implement them. The present disclosure may be embodied in various different forms and is not limited to the embodiments described herein.

[0013] FIG. 1 is a schematic diagram of a substrate bonding device (10) according to one embodiment of the present disclosure.

[0014] Figure 2 is a cross-sectional view taken along the line AA' of Figure 1.

[0015] Referring to FIGS. 1 and 2, in one embodiment, the substrate bonding device (10) may be a device for bonding a plurality of substrates. Specifically, the substrate bonding device (10) may include a first bonding chuck (100), a second bonding chuck (200), a flow pressure control unit (300), a monitoring unit (400), a control unit (500), a vacuum ejector (600), and a pneumatic system (700).

[0016] The first bonding chuck (100) can support the first substrate (S1). Specifically, the first bonding chuck (100) can stably support the first substrate (S1) while controlling deformation during the bonding process. For example, the first bonding chuck (100) can fix the first substrate (S1) using vacuum pressure.

[0017] In one embodiment, the first bonding chuck (100) can fix the first substrate (S1) by performing vacuum adsorption. Specifically, the first bonding chuck (100) can fix the first substrate (S1) by applying vacuum pressure to a vacuum groove (130) provided in a portion on which the first substrate (S1) is seated.

[0018] The first bonding chuck (100) may include a first base portion (110), a deformation plate (120), a vacuum groove (130), and a displacement sensor (140). Specifically, the first bonding chuck (100) is configured to support the first substrate (S1) and control the flatness and curvature of the first substrate (S1) during the bonding process. It can fix the substrate through vacuum suction and correct run-out and alignment errors by controlling deformation through the deformation plate (120).

[0019] The first base portion (110) is a lower structure of the first bonding chuck (100) and may be a structure that maintains the mechanical rigidity of the first bonding chuck (100). Specifically, the first base portion (110) may be positioned below the deformation plate (120) to support the deformation plate (120).

[0020] In one embodiment, the first base portion (110) may include a heat-resistant material. For example, the first base portion (110) may be formed of a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the first base portion (110) can secure the overall strength of the first bonding chuck (100) and minimize deformation caused by external vibration or thermal expansion.

[0021] The deformation plate (120) is placed on the first base portion (110) and can be deformed by pneumatic or electrical driving to adjust the curvature of the first substrate (S1). Specifically, the deformation plate (120) has a cavity (121) formed in its lower portion and can control the deformation of the first substrate (S1) through convex or concave deformation by a fluid supplied from a vacuum ejector (600) or a pneumatic system (700).

[0022] The deformation plate (120) may include a vacuum groove (130) in which vacuum pressure can be formed. For example, vacuum pressure may be applied through the vacuum groove (130) by a vacuum ejector (600) or a pneumatic system (700) so that the first substrate (S1) is vacuum adsorbed onto one side of the deformation plate (120). As another example, the vacuum ejector (600) or the pneumatic system (700) may release the vacuum pressure of the vacuum groove (130) so that vacuum adsorption on the first substrate (S1) is released.

[0023] The vacuum groove (130) may include a plurality of vacuum grooves arranged between the center and the outer circumference of the deformation plate (120). For example, the plurality of vacuum grooves may be configured to regulate pressure individually or as a whole.

[0024] The vacuum groove (130) can form a vacuum pressure in each of the first central vacuum groove (131) for vacuum adsorbing the central region of the first substrate (S1), the first intermediate vacuum groove (133) for vacuum adsorbing the intermediate region between the central region and the outer region of the first substrate (S1), and the first outer vacuum groove (135) for vacuum adsorbing the outer region of the first substrate (S1).

[0025] The deformation plate (120) can be mounted on the first base part (110) so that the distance from the first base part (110) can be varied. For example, the outer circumference of the deformation plate (120) is fixed to the first base part (110), but the inner part of the fixed outer circumference of the deformation plate (120) can be deformed convexly by an external force. The deformation plate (120) is deformed while supporting the first substrate (S1), thereby forcibly deforming the first substrate (S1). At this time, the curvature of the forcibly deformed first substrate (S1) can be controlled by the curvature of the deformation plate (120).

[0026] In one embodiment, the deformation plate (120) may be formed of a metal plate or a composite material. Specifically, the deformation plate (120) may include metal, ceramic, rubber, or a combination thereof. For example, the deformation plate (120) may include aluminum or silicon carbide (SiC).

[0027] In one embodiment, the first bonding chuck (100) may include a power supply unit. The pneumatic regulator can regulate the pressure of the cavity (121) formed between the first base unit (110) and the deformation plate (120). Through this, the curvature of the deformation plate (120) can be controlled.

[0028] For example, the power supply unit may increase the pressure of the cavity (121) by injecting air into the cavity (121) or decrease the pressure of the cavity (121) by exhausting the air from the cavity (121). When the pressure of the cavity (121) is increased by the power supply unit, the deformation plate (120) is deformed to increase the curvature, and the first substrate (S1) supported by the deformation plate (120) may also be deformed to increase the curvature. Conversely, when the pressure of the first cavity (121) is decreased by the power supply unit, the deformation plate (120) is deformed to decrease the curvature, and the first substrate (S1) supported by the deformation plate (120) may also be deformed to decrease the curvature.

[0029] The displacement sensor (140) can detect the displacement of the deformation plate (120). A plurality of first displacement sensors (140) may be mounted on the first base portion (110). The displacement sensor (140) may include a plurality of sensors. The plurality of displacement sensors (140) may be configured to detect the distance along the vertical direction between different parts of the deformation plate (120) and the first base portion (110).

[0030] A plurality of displacement sensors (140) may include a first sub-displacement sensor (141) for detecting displacement of the center of the deformation plate (120), second and third sub-displacement sensors (142, 143) for detecting displacement between the center and outer region of the deformation plate (120), and fourth and fifth sub-displacement sensors (144, 145) for detecting displacement of the outer region of the deformation plate (120).

[0031] The second bonding chuck (200) is positioned opposite the first bonding chuck (100) to support the second substrate (S2). Specifically, the second bonding chuck (200) supports the second substrate (S2) during the bonding process and can control the contraction or expansion of the second substrate (S2) by means of a flow pressure control unit (300). The second bonding chuck (200) may include a second base unit (210) and a substrate fixing unit (220).

[0032] The second base portion (210) is a structure of the second bonding chuck (200) and may be a structure that maintains the mechanical strength of the second bonding chuck (200). Specifically, the second base portion (210) may include a heat-resistant material. For example, the second base portion (210) may be formed from a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the second base portion (210) can secure the overall strength of the second bonding chuck (200) and minimize deformation caused by external vibration or thermal expansion.

[0033] The substrate fixing part (220) can directly support and fix the second substrate (S2). For example, the substrate fixing part (220) can fix the edge of the second substrate (S2) and support the second substrate (S2).

[0034] FIG. 2 illustrates a case where the substrate fixing part (220) physically fixes the first substrate (S1), but this is a non-limiting example, and the substrate may be fixed by adsorption using vacuum or electrostatic force.

[0035] In one embodiment, the substrate fixing part (220) may include a second vacuum groove (not shown). For example, the substrate fixing part (220) can regulate pressure through the second vacuum groove and adsorb and fix the second substrate (S2).

[0036] The first bonding chuck (100) may be a lower bonding chuck, and the second bonding chuck (200) may be an upper bonding chuck positioned above the first bonding chuck (100). However, this is a non-limiting example and may include a case where the second bonding chuck (200) is a lower bonding chuck and the first bonding chuck (100) is an upper bonding chuck positioned above the second bonding chuck (200).

[0037] The flow pressure control unit (300) can control the flow pressure between the first bonding chuck (100) and the second bonding chuck (200). Specifically, the flow pressure control unit (300) can control the flow pressure within the bonding space between the first bonding chuck (100) and the second bonding chuck (200).

[0038] The flow pressure control unit (300) can adjust the gap and curvature between substrates (S1, S2) by controlling the pressure, temperature, or composition of the air layer within the bonding space between the first bonding chuck (100) and the second bonding chuck (200). Specifically, the flow pressure control unit (300) can precisely control the gap and deformation state between substrates by controlling the supply or exhaust of a fluid such as nitrogen, argon, or air within the bonding space to switch the pressure within the bonding space to a positive or negative pressure state. In particular, the flow pressure control unit (300) can control the deformation of the second substrate (S2) fixed by the second bonding chuck (200).

[0039] In one embodiment, the flow pressure control unit (300) can control the pressure of the air layer between the substrates isotropically or anisotropically through the supply or exhaust of fluid. For example, the flatness of the second substrate (S2) can be secured by maintaining the pressure of the entire bonding space uniformly. Alternatively, local expansion or contraction of the second substrate (S2) can be induced by creating a pressure difference in a specific area.

[0040] In this way, the flow pressure control unit (300) can precisely control the bonding overlay by controlling the local pressure between the substrates and finely adjusting the curvature of the substrates, particularly the second substrate (S2). Unlike conventional technologies, the flow pressure control unit (300) has the advantage of being able to expand the deformation point for the amount of deformation of the second substrate (S2).

[0041] For example, conventionally, the deformation of the second substrate (S2) is controlled through the gap between the substrates (S1, S2), but in this case, the run-out influence was low. However, the flow pressure control unit (300) can expand the margin for bonding the substrates (S1, S2) by expanding the deformation influence of the second substrate (S2) and correcting the run-out component. At this time, as described above, the first substrate (S1) is deformed by the deformation plate (120), and the second substrate (S2) is deformed by the flow pressure control unit (300) and can be corrected to be suitable for bonding.

[0042] In one embodiment, the flow pressure control unit (300) can control the pressure of the air layer between the substrates through the supply or exhaust of fluid, thereby controlling the bonding overlay through the expansion or contraction of the substrates to secure a knob.

[0043] The flow pressure control unit (300) can control the contraction or expansion of the second substrate (S2). For example, if the fluid sprayed from the flow pressure control unit (300) is controlled to a positive pressure, the second substrate (S2) may expand and deform. Conversely, if the fluid sprayed from the flow pressure control unit (300) is controlled to a negative pressure, the second substrate (S2) may contract and deform.

[0044] In one embodiment, the flow pressure control unit (300) may be positioned near the outer periphery of the first bonding chuck (100). Specifically, the flow pressure control unit (300) may be directly coupled to the outer surface of the deformation plate (120). Through this, the flow pressure control unit (300) can detect changes in the thickness of the air layer in real time according to changes in the curvature of the deformation plate and adjust the corresponding pressure.

[0045] In another embodiment, the flow pressure regulating unit (300) may be coupled to the first base unit (110). Specifically, the flow pressure regulating unit (300) may be coupled to the outer surface or the lower surface of the first base unit (110). This allows for improved structural stability and minimizes the deformation effect caused by external forces.

[0046] In another embodiment, the flow pressure control unit (300) may be independently positioned at a predetermined distance from the outer periphery of the first bonding chuck (100). Specifically, the flow pressure control unit (300) may be driven independently while spaced apart from the outer surface of the first bonding chuck (100). This allows the process to be performed while minimizing interference between the first bonding chuck (100) and the second bonding chuck (200).

[0047] For example, if the second substrate (S2), which is the upper plate, is excessively expanded compared to the first substrate (S1), which is the lower plate, it may be difficult to sufficiently correct the deformation tolerance of the first substrate (S1) using only the deformation plate (120). In this case, the process window can be expanded by reducing the degree of expansion of the second substrate (S2) by lowering the flow pressure through the flow pressure control unit (300).

[0048] The monitoring unit (400) can detect physical variables such as temperature, pressure, or displacement within the bonding space in real time. Specifically, the monitoring unit (400) can detect the physical variables detected through the flow pressure control unit (300) in real time.

[0049] The monitoring unit (400) can perform feedback control by transmitting information received from the flow pressure control unit (300) to the control unit (500). Specifically, the monitoring unit (400) can detect an abnormal condition early through real-time monitoring or detect bonding non-uniformity due to temperature and deviation. In this case, the monitoring unit (400) transmits the relevant information to the control unit (500), and the control unit (500) can transmit a signal to control the operation of the first bonding chuck (100), the second bonding chuck (200), and the flow pressure control unit (300).

[0050] In one embodiment, the monitoring unit (400) may include a plurality of monitoring units (410, 420, 430, 440). For example, when there are multiple flow pressure control units (300), the monitoring unit (400) may be individually coupled with each flow pressure control unit to measure information such as the pressure of each flow pressure control unit (300).

[0051] In this way, the substrate bonding device of the present disclosure includes a monitoring unit (400) so that the bonding process can be monitored in real time to quickly identify abnormal conditions and minimize bonding non-uniformity.

[0052] The control unit (500) may be a central control system that integrates and controls the entire substrate bonding device (10). Specifically, the control unit (500) may control the bonding process between the first substrate (S1) and the second substrate (S2) using the substrate bonding device (10) overall.

[0053] In one embodiment, the control unit (500) can control the operation of the first bonding chuck (100) and the second bonding chuck (200). For example, the control unit (500) can control the operation of the first bonding chuck (100) and the second bonding chuck (200), and may be configured to control an actuator (not shown) responsible for the movement of the first bonding chuck (100) and the movement of the second bonding chuck (200). Through this, the control unit (500) can control the gap between the first bonding chuck (100) and the second bonding chuck (200) during the process and perform a process of aligning and bonding the first substrate (S1) and the second substrate (S2).

[0054] In one embodiment, the control unit (500) can control the deformation plate (120) within the first bonding chuck (100). For example, the control unit (500) can control the contraction or expansion of the first substrate (S1) based on the displacements of the deformation plate (120) detected by a plurality of displacement sensors (140).

[0055] For example, the first to fifth sub-displacement sensors (141, 142, 143, 144, 145) each transmit a displacement signal for the first substrate (S1) to the control unit (500), and the control unit (500) can obtain data on positional displacements of the deformation plate (120) based on the displacement signal.

[0056] Subsequently, it can be determined whether the positional displacements of the deformation plate (120) detected by the plurality of displacement sensors (140) are within predetermined reference ranges. For example, if it is determined that the displacements are within the reference ranges, the operation of the flow pressure control unit (300) can be controlled to control the amount of deformation of the second substrate (S2).

[0057] However, this is a non-limiting example and may include not only the case where the first substrate (S1) is controlled preferentially over the second substrate (S2) by the control unit (500), but also the case where the second substrate (S2) is controlled preferentially over the first substrate (S1), or the case where the first substrate (S1) and the second substrate (S2) are controlled simultaneously.

[0058] In one embodiment, the control unit (500) can control the operation of the flow pressure control unit (300). Specifically, the control unit (500) can control the flow rate of the flow pressure control unit (300) to be controlled for deformation of the second substrate (S2) by considering the degree of deformation of the first substrate (S1) and the second substrate (S2).

[0059] The control unit (500) may be implemented as hardware, firmware, software, or any combination thereof. For example, the control unit (500) may be a computing device such as a workstation computer, a desktop computer, a laptop computer, or a tablet computer.

[0060] The control unit (500) may be a simple control unit, a complex processor such as a microprocessor, CPU, GPU, etc., a processor configured by software, dedicated hardware, or firmware. The control unit (500) may be implemented by, for example, a general-purpose computer or application-specific hardware such as a Digital Signal Processor (DSP), a Field Programmable Gate Array (FPGA), and an Application Specific Integrated Circuit (ASIC).

[0061] The operation of the control unit (500) may be implemented by instructions stored on a machine-readable medium that can be read and executed by one or more processors. The machine-readable medium may include any mechanism for storing and / or transmitting information in a form readable by a machine, such as a computing device. For example, the machine-readable medium may include Read Only Memory (ROM), Random Access Memory (RAM), magnetic disk storage medium, optical storage medium, flash memory devices, electrical, optical, acoustic, or other forms of radio signals and any other signals.

[0062] The control unit (500) may be implemented with firmware, software, routines, and instructions for performing a bonding process. For example, the control unit (500) may be implemented by software that receives data for feedback, generates a signal for performing a bonding process, and performs a predetermined operation.

[0063] The first bonding chuck (100), the second bonding chuck (200), and the flow pressure control unit (300) can be accommodated within a chamber (CB). Specifically, the chamber (CB) can provide an internal space for performing a bonding process between a first substrate (S1) and a second substrate (S2). For example, vacuum pressure or atmospheric pressure may be formed in the internal space of the chamber (CB).

[0064] The chamber (CB) may include an opening. The first substrate (S1) and the second substrate (S2) may be introduced into or removed from the interior of the chamber (CB) through the opening. To protect the interior space of the chamber (CB) from the external environment, the opening may be sealed or closed as necessary.

[0065] The vacuum ejector (600) may be configured to form a vacuum environment for the units within the substrate bonding device (10). Specifically, the vacuum ejector (600) may supply vacuum (VAC) to at least one of the first bonding chuck (100), the second bonding chuck (200), and the flow pressure control unit (300). For example, the first bonding chuck (100) or the second bonding chuck (200) may fix the first substrate (S1) or the second substrate (S2) using the vacuum (VAC) delivered from the vacuum ejector (600). Additionally, the flow rate of the fluid sprayed from the flow pressure control unit (300) may be controlled using the vacuum (VAC) delivered from the vacuum ejector (600).

[0066] The pneumatic system (700) can supply compressed air (AIR) to units within the substrate bonding device (10). Specifically, the pneumatic system (700) can supply compressed air (AIR) to at least one of the first bonding chuck (100), the second bonding chuck (200), and the flow pressure control unit (300). For example, the pneumatic system (700) can control the change in curvature by sequentially supplying positive or negative pressure to the lower cavity (121) of the deformation plate (120). Additionally, the pneumatic system (700) can control the compressed air (AIR) of the fluid within the flow pressure control unit (300).

[0067] The vacuum (VAC) generated from the vacuum ejector (600) can be transmitted to the first bonding chuck (100), the second bonding chuck (200), or the flow pressure control unit (300) through the first to fourth regulators (Regulator, 610, 620, 630, 640). The compressed air (AIR) generated from the pneumatic system (700) can be transmitted to the first bonding chuck (100), the second bonding chuck (200), or the flow pressure control unit (300) through the first to fourth regulators (610, 620, 630, 640).

[0068] The first to fourth regulators (610, 620, 630, 640) may be devices that mix and regulate vacuum (VAC) generated from a vacuum ejector (600) and compressed air (AIR) supplied from a pneumatic system (700) to precisely output a target pressure required for the first bonding chuck (100), the second bonding chuck (200), and the flow pressure control unit (300).

[0069] For example, negative pressure can be provided from a vacuum ejector (600) and positive pressure can be provided from a pneumatic system (700). The first to fourth regulators (610, 620, 630, 640) can finely control the flow pressure within the bonding space by mixing and adjusting the positive pressure and the negative pressure. Additionally, the first to fourth regulators (610, 620, 630, 640) can fix or detach the first substrate (S1) or the second substrate (S2) to the first bonding chuck (100) or the second bonding chuck (200) by mixing and adjusting the positive pressure and the negative pressure.

[0070] Figure 1 illustrates four regulators, but this is a non-limiting example, and may include cases where one regulator is installed and five or more regulators are installed.

[0071] In this way, the substrate bonding device (10) of the present disclosure can perform various types of substrate bonding processes, such as hybrid copper bonding or fusion bonding, by shrinking and / or expanding the first substrate (S1) by means of a deformation plate (120) and shrinking and / or expanding the second substrate (S2) isotropically or anisotropically by means of a flow pressure control unit (300), thereby correcting the run-out value of the first substrate (S1) and the second substrate (S2) to be close to 0.

[0072] Figures 3 and 4 are enlarged views of the P1 area of ​​Figure 2.

[0073] Referring to FIGS. 3 and 4, in one embodiment, the flow pressure control unit (300) may include a housing (310) and a nozzle unit (320). Specifically, the flow pressure control unit (300), which is positioned adjacent to the outer circumference of the first bonding chuck (100), can control the air layer pressure between the first substrate (S1) and the second substrate (S2) through the nozzle unit (320).

[0074] The housing (310) may be a case of the fluid pressure control unit (300). Specifically, the housing (310) may be arranged to enclose a fluid path in which a pneumatic line and a vacuum line are integrated and placed inside. More specifically, a passage for delivering fluid supplied from regulators (610, 620, 630, 640) to the nozzle unit (320) may be arranged within the housing (310).

[0075] In one embodiment, the housing (310) may be coupled and disposed with the first bonding chuck (100). Specifically, the housing (310) may be directly coupled and fixed to the first base portion (110) or the deformation plate (120) within the first bonding chuck (100).

[0076] In another embodiment, the housing (310) may be positioned at a predetermined distance from the first bonding chuck (100). For example, the housing (310) may be positioned at a distance from the first bonding chuck (100) and coupled to the chamber (CB) itself or another member within the chamber (CB).

[0077] In one embodiment, the flow pressure control unit (300) may include a pressure sensor (330). The pressure sensor (330) can detect the pressure of the fluid between the first substrate (S1) and the second substrate (S2) in real time.

[0078] In one embodiment, the pressure sensor (330) may be positioned adjacent to the nozzle portion (320) of the flow pressure control unit (300). Specifically, the pressure sensor (330) may be positioned inside the nozzle portion (320) or adjacent to the nozzle portion (320). The pressure sensor (330) may detect the pressure of the fluid sprayed or sucked from the nozzle portion (320) or the pressure of the fluid between the first substrate (S1) and the second substrate (S2).

[0079] Referring again to FIG. 3, the nozzle section (320) can provide positive pressure (PG1) between the first substrate (S1) and the second substrate (S2). The nozzle section (320) can supply positive pressure to the bonding space between the first substrate (S1) and the second substrate (S2). At this time, the positive pressure (PG1) can be formed by compressed air supplied from the pneumatic system (700) being regulated through regulators (610, 620, 630, 640) and then supplied to the nozzle section (320) through the flow path within the housing (310) of the flow pressure control section (300). Specifically, the nozzle section (320) can create a positive pressure state between the first substrate (S1) and the second substrate (S2) by providing additional compressed air to the fluid within the bonding space through a forward flow path.

[0080] Referring again to FIG. 4, the nozzle section (320) can provide negative pressure (PG2) between the first substrate (S1) and the second substrate (S2). The nozzle section (320) can draw in fluid to form negative pressure (PG2) in the bonding space between the first substrate (S1) and the second substrate (S2). At this time, the negative pressure (PG2) can be formed by the vacuum generated from the vacuum ejector (600) being depressurized through the regulators (610, 620, 630, 640) and then exhausted into the bonding space through the nozzle section (320) of the flow pressure control section (300). Specifically, the nozzle section (320) can create a negative pressure state by drawing in gas from the fluid in the bonding space through a reverse flow path and removing air between the first substrate (S1) and the second substrate (S2).

[0081] In this way, the substrate bonding device (10) of the present disclosure can correct its own anisotropic component by blowing or sucking air using a flow pressure control unit (300), thereby causing anisotropic deformation of the second substrate (S2), which is the upper substrate.

[0082] Figure 5 is a plan view cut along the BB' line of Figure 1.

[0083] Referring to FIG. 5, in one embodiment, the flow pressure control unit (300) may include at least one flow pressure control unit (300U). Specifically, the flow pressure control unit (300U) may be formed as a segmented structure on a plane.

[0084] In one embodiment, the flow pressure control unit (300U) can be implemented in various shapes such as a planar segmented cylindrical shape, a square shape, a triangular shape, or a polygonal shape. For example, the planar segmented cylindrical shape can be implemented in the form of an arc having curvature along the outer circumference of the first bonding chuck (100). This allows for a uniform fluid distribution along the outer circumference of the substrate.

[0085] In one embodiment, the flow pressure control unit (300U) may have a central angle of 30 to 60°. Specifically, the flow pressure control unit (300U) may be formed into a structure in which a plurality of units are combined and spaced apart to completely surround the entire circumference.

[0086] In one embodiment, the circumferential length (W1) of the flow pressure control unit (300U) may be longer than the spacing (W2) between the plurality of flow pressure control units (300U). By doing so, the occupied length of each unit is designed to be sufficiently larger than the adjacent spacing between units, so that the influence range of the fluid pressure formed by each unit overlaps with one another, thereby allowing for more precise control of deformation of the second substrate (S2).

[0087] FIGS. 6 to 8 are plan views of various embodiments cut along the BB' line of FIG. 1.

[0088] Referring to FIGS. 6 to 8, in one embodiment, the number of flow pressure control units (300) can be designed in various ways. Specifically, the flow pressure control unit (300) can be implemented as a single ring structure as in FIG. 6, as in FIG. 7, as in a segmented structure of two flow pressure control units (300U), and as in FIG. 8, as in a segmented structure of eight flow pressure control units (300U). This is a non-limiting example, and the number and shape of the flow pressure control units (300U) can be applied in various ways.

[0089] Referring again to FIG. 6, the flow pressure control unit (300) can be formed in the shape of a closed-loop ring. The flow pressure control unit (300) can form an isotropic pressure distribution by uniformly distributing the fluid supplied from the pneumatic system (700) or vacuum ejector (600) along the entire ring.

[0090] For example, if the second substrate (S2), which is the upper substrate, is excessively isotropically expanded, the flow pressure control unit (300) in the form of a closed-loop ring can form negative pressure between the first substrate (S1) and the second substrate (S2) to induce isotropic contraction of the second substrate (S2) for alignment and bonding with the first substrate (S1). Alternatively, if the second substrate (S2) is excessively isotropically contracted, the flow pressure control unit (300) in the form of a closed-loop ring can form positive pressure between the first substrate (S1) and the second substrate (S2) to induce isotropic expansion of the second substrate (S2) for alignment and bonding with the first substrate (S1).

[0091] Referring again to FIG. 7, the flow pressure control unit (300) can be divided into two flow pressure control units (300U), either left and right or up and down. Each flow pressure control unit (300U) can be independently connected to the aforementioned regulators (610, 620, 630, 640) to control the fluid pressure between the substrates (S1, S2).

[0092] In one embodiment, the flow pressure control unit (300U) may be symmetrically positioned with respect to a central axis. By being symmetrically positioned with respect to a central axis, the fluid pressure between the substrates (S1, S2) can be controlled uniformly and predictably.

[0093] Referring again to FIG. 8, the flow pressure control unit (300) may include a plurality of flow pressure control units (300U). For example, the flow pressure control unit (300) may be subdivided into eight flow pressure control units (300U) and arranged at equal intervals in the circumferential direction along the outer circumference of the first bonding chuck (100). Each flow pressure control unit (300U) may be independently connected to the aforementioned regulators (610, 620, 630, 640) to control the fluid pressure between the substrates (S1, S2).

[0094] The flow pressure control unit (300) can control the deformation of the second substrate (S2) more precisely by individually controlling the pressure of a plurality of flow pressure control units (300U). Specifically, since the pressure of the flow pressure control unit (300) is individually controlled by a plurality of flow pressure control units (300U), there is an advantage that anisotropic deformation is possible, unlike the prior art.

[0095] For example, the second substrate (S2) may have areas that are either shrinking or expanding. In this case, the flow pressure control unit (300U) adjacent thereto can be used to control the formation of positive pressure in the area where the shrinking deformation is performed and needs to be expanded. Alternatively, the flow pressure control unit (300U) adjacent thereto can be used to control the formation of negative pressure in the area where the expansion deformation is performed and needs to be contracted.

[0096] In this way, by individually controlling a plurality of fluid pressure control units (300U), the pressure distribution of the fluid within the bonding space can be precisely controlled locally. Through this, the bonding overlay can be controlled with high precision by precisely correcting the difference in thermal expansion or radial runout between the substrates (S1, S2).

[0097] FIG. 9 illustrates the driving process of a flow pressure control unit (300) according to one embodiment of the present disclosure.

[0098] FIG. 9(a) is a drawing taken after cutting along the BB' line of FIG. 1 and looking toward the third direction (D3), and FIG. 9(b) is a drawing taken in the opposite direction to the third direction (D3). Specifically, FIG. 9(a) illustrates the process of the second substrate (S2), which is the upper substrate, being deformed by the flow pressure control unit (300), and FIG. 9(b) illustrates the process of the first substrate (S1), which is the lower substrate, being deformed by the deformation plate (120).

[0099] For example, the first substrate (S1), which is the lower substrate, may have strains of -5 ppm and -5 ppm on the X-axis and Y-axis scales in the radial direction of the substrate. At this time, the first substrate (S1) may undergo an expansion process by the deformation plate (120) to have strains of -3 ppm and -3 ppm. Afterwards, in order to align and bond with the first substrate (S1), the strain of the second substrate (S2), which is the upper substrate, also needs to be controlled in the same way.

[0100] For example, the second substrate (S2), which is the upper substrate, may have strains of -1 ppm and -5 ppm on the X-axis and Y-axis scales in the radial direction of the substrate. At this time, a plurality of flow pressure control units (300UT, 300UB, 300UR, 300UL) may operate individually in response to the anisotropic deformation of the second substrate (S2).

[0101] For example, it can be confirmed that the second substrate (S2) is excessively deformed with respect to the Y-axis scale. In response to this, a flow pressure control unit (300UT, 300UB) positioned along the Y-axis direction with respect to the second substrate (S2) can be controlled to form a positive pressure and have a strain of -3 ppm.

[0102] It can be confirmed that the second substrate (S2) requires shrinkage deformation corresponding to the first substrate (S1) with respect to the X-axis scale. Accordingly, a flow pressure control unit (300UR, 300UL) arranged along the X-axis direction with respect to the second substrate (S2) can be controlled to have a strain of -3 ppm by forming negative pressure.

[0103] In this way, the substrate bonding device (10) of the present disclosure can perform self-anisotropic component correction by controlling the flow field within the facility to generate anisotropic deformation with respect to the second substrate (S2), which is the upper substrate.

[0104] FIG. 10 illustrates the driving process of a flow pressure control unit according to another embodiment of the present disclosure.

[0105] FIG. 10 (a) is a drawing taken after cutting along the BB' line of FIG. 1 and looking toward the third direction (D3), and (b) is a drawing taken in the direction opposite to the third direction (D3). Specifically, FIG. 10 (a) illustrates the process of the second substrate (S2), which is the upper substrate, being deformed by the flow pressure control unit (300), and FIG. 10 (b) illustrates the process of the first substrate (S1), which is the lower substrate, being deformed by the deformation plate (120).

[0106] For example, the first substrate (S1), which is the lower substrate, may have strains of -7 ppm and -7 ppm on the X-axis and Y-axis scales in the radial direction of the substrate. The second substrate (S2), which is the upper substrate, may have strains of -1 ppm and -1 ppm on the X-axis and Y-axis scales in the radial direction of the substrate.

[0107] In the case of the deformation plate (120) to which the first substrate (S1), which is the lower substrate, is attached, the deformation margin for the substrate is somewhat low, and in order to align with the upper substrate using only the deformation plate (120), excessive deformation of the first substrate (S1) is unavoidable. In this case, problems may occur where the first substrate (S1) breaks or detaches from the deformation plate (120).

[0108] In response to this, the second substrate (S2) can expand the deformable range of the second substrate (S2) by controlling the pressure distribution within the bonding space through the flow pressure control unit (300), thereby compensating for the runout imbalance caused by the lack of deformation margin of the first substrate (S1).

[0109] FIG. 11 illustrates the driving process of a flow pressure control unit (300) according to another embodiment of the present disclosure.

[0110] FIG. 11 illustrates a process for controlling the timing of flow pressure generation during the bonding process of substrates (S1, S2) when there is a difference in radial deformation with respect to the second substrate (S2). Specifically, referring to FIG. 11 (a), it can be seen that the second substrate (S2) has a difference in radial deformation with respect to the first substrate (S1) before bonding.

[0111] For example, when the second substrate (S2) is divided into first to third radiating sections (R1, R2, R3) from the center of the substrate toward the edge, it can be confirmed that shrinkage deformation of the substrate has occurred in the first and second radiating sections (R1, R2), and that expansion deformation of the substrate has occurred in the third radiating section (R3).

[0112] Subsequently, referring to Fig. 11 (b) and (c), a portion of the first substrate (S1), which is controlled to have the same amount of deformation as the first and second radiating portions (R1, R2) of the second substrate (S2), can be bonded to the second substrate (S2). Subsequently, a flow pressure is generated to form a negative pressure with respect to the third radiating portion (R3) through the flow pressure control unit (300), thereby controlling the amount of deformation to have the same amount as the first and second radiating portions (R1, R2).

[0113] Subsequently, referring to (d) of FIG. 11, the deformation amount of the third radiating part (R3) is controlled equally in correspondence with the deformation amount of the first substrate (S1) to bond the first substrate (S1) and the second substrate (S2) together to obtain a bonded substrate (S). In this way, the substrate bonding device (10) of the present disclosure has the advantage of enabling complete runout correction even for an upper substrate in which a difference in radial deformation of the substrate remains, thereby enabling improvement of residual components.

[0114] FIGS. 12 and FIGS. 13 are cross-sectional views of various embodiments cut along the line AA' of FIG. 1.

[0115] Referring to FIGS. 1 and FIGS. 12, a substrate bonding device (10) of one embodiment may include a first bonding chuck (100), a second bonding chuck (200), a flow pressure control unit (300), a monitoring unit (400), a control unit (500), a vacuum ejector (600), and a pneumatic system (700). Specifically, unlike FIG. 2, the first bonding chuck (100) in the substrate bonding device (10) may not separately include a deformation plate (120). A detailed description of the flow pressure control unit (300), the monitoring unit (400), the control unit (500), the vacuum ejector (600), and the pneumatic system (700) may be referenced to the contents of FIGS. 1 to 11 described above without contradiction.

[0116] The first bonding chuck (100) can support the first substrate (S1). Specifically, the first bonding chuck (100) can stably support the first substrate (S1) and perform a bonding process. For example, the first bonding chuck (100) can fix the first substrate (S1) using vacuum pressure.

[0117] In one embodiment, the first bonding chuck (100) can fix the first substrate (S1) by performing vacuum adsorption. Specifically, the first bonding chuck (100) can fix the first substrate (S1) by applying vacuum pressure to a vacuum groove (130) provided in a portion on which the first substrate (S1) is seated.

[0118] The first bonding chuck (100) may include a first base portion (110) and a vacuum groove (130). Specifically, the first bonding chuck (100) may fix a first substrate (S1) by vacuum adsorption. The first base portion (110) is a lower structure of the first bonding chuck (100) and may be a structure that maintains the mechanical rigidity of the first bonding chuck (100).

[0119] In one embodiment, the first base portion (110) may include a heat-resistant material. For example, the first base portion (110) may be formed of a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the first base portion (110) can secure the overall strength of the first bonding chuck (100) and minimize deformation caused by external vibration or thermal expansion.

[0120] The vacuum groove (130) may be positioned to penetrate at least a portion of the interior of the first base portion (110). For example, the vacuum groove (130) may be positioned to penetrate at least a portion of the area from the upper surface of the first base portion (110) downward. Specifically, vacuum pressure may be applied through the vacuum groove (130) by a vacuum ejector (600) or a pneumatic system (700) so that the first substrate (S1) is vacuum-adsorbed onto one surface of the first base portion (110). As another example, the vacuum ejector (600) or the pneumatic system (700) may release the vacuum pressure of the vacuum groove (130) so that vacuum adsorption to the first substrate (S1) is released.

[0121] The vacuum groove (130) may include a plurality of vacuum grooves arranged between the center and the outer circumference of the deformation plate (120). For example, the plurality of vacuum grooves may be configured to regulate pressure individually or as a whole.

[0122] The above plurality of vacuum grooves can each form a vacuum pressure in a first central vacuum groove (131) for vacuum adsorbing a central region of the first substrate (S1), a first intermediate vacuum groove (133) for vacuum adsorbing an intermediate region between the central region and the outer region of the first substrate (S1), and a first outer vacuum groove (135) for vacuum adsorbing an outer region of the first substrate (S1).

[0123] The second bonding chuck (200) is positioned opposite the first bonding chuck (100) to support the second substrate (S2). Specifically, the second bonding chuck (200) supports the second substrate (S2) during the bonding process and can control the contraction or expansion of the second substrate (S2) by means of a flow pressure control unit (300). The second bonding chuck (200) may include a second base unit (210) and a substrate fixing unit (220).

[0124] The second base portion (210) is a structure of the second bonding chuck (200) and may be a structure that maintains the mechanical strength of the second bonding chuck (200). Specifically, the second base portion (210) may include a heat-resistant material. For example, the second base portion (210) may be formed from a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the second base portion (210) can secure the overall strength of the second bonding chuck (200) and minimize deformation caused by external vibration or thermal expansion.

[0125] The substrate fixing part (220) can directly support and fix the second substrate (S2). For example, the substrate fixing part (220) can fix the edge of the second substrate (S2) and support the second substrate (S2).

[0126] The flow pressure control unit (300) can adjust the gap and curvature between substrates (S1, S2) by controlling the pressure, temperature, or composition of the air layer within the bonding space between the first bonding chuck (100) and the second bonding chuck (200). Specifically, the flow pressure control unit (300) can precisely control the gap and deformation state between substrates by controlling the supply or exhaust of a fluid such as nitrogen, argon, or air within the bonding space to switch the pressure within the bonding space to a positive or negative pressure state. In particular, the flow pressure control unit (300) can control the deformation of the second substrate (S2) fixed by the second bonding chuck (200).

[0127] In one embodiment, the flow pressure control unit (300) can control the pressure of the air layer between the substrates isotropically or anisotropically through the supply or exhaust of fluid. For example, the flatness of the second substrate (S2) can be secured by maintaining the pressure of the entire bonding space uniformly. Alternatively, local expansion or contraction of the second substrate (S2) can be induced by creating a pressure difference in a specific area.

[0128] In this way, the substrate bonding device (10) of FIG. 12 can perform a bonding process while minimizing deformation of the lower substrate, the first substrate (S1). For example, in the case of fusion bonding, the main purpose is to minimize deformation of the bonded wafer, which is called IPD (In-Plane Distortion). To this end, the bonding process can be performed by finely deforming the upper substrate, the second substrate (S2), so as to correspond to the first substrate (S1), without deforming the first substrate (S1).

[0129] In this way, in fusion bonding, the deformation of the second substrate (S2) can be directly linked to the IPD, so the purpose of the IPD can be achieved by minimizing the deformation of the second substrate (S2).

[0130] Referring to FIGS. 1 and FIGS. 13, a substrate bonding device (10) of one embodiment may include a first bonding chuck (100), a second bonding chuck (200), a flow pressure control unit (300), a monitoring unit (400), a control unit (500), a vacuum ejector (600), and a pneumatic system (700). Specifically, unlike FIG. 2, the first bonding chuck (100) in the substrate bonding device (10) may not separately include a deformation plate (120). A detailed description of the flow pressure control unit (300), the monitoring unit (400), the control unit (500), the vacuum ejector (600), and the pneumatic system (700) may be referenced to the contents of FIGS. 1 to 11 described above without contradiction.

[0131] The first bonding chuck (100) can support the first substrate (S1). Specifically, the first bonding chuck (100) may include a first base portion (110) and a first substrate fixing portion (150). The first base portion (110) is a structure of the first bonding chuck (100) and may be a structure that maintains the mechanical rigidity of the first bonding chuck (100).

[0132] Specifically, the first base portion (110) may include a heat-resistant material. For example, the first base portion (110) may be formed from a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the first base portion (110) can secure the overall strength of the first bonding chuck (100) and minimize deformation caused by external vibration or thermal expansion.

[0133] The first substrate fixing part (150) can directly support and fix the first substrate (S1). For example, the first substrate fixing part (150) can fix the edge of the first substrate (S1) and support the first substrate (S1).

[0134] The second bonding chuck (200) is positioned opposite the first bonding chuck (100) to support the second substrate (S2). Specifically, the second bonding chuck (200) supports the second substrate (S2) during the bonding process and can control the contraction or expansion of the second substrate (S2) by means of a flow pressure control unit (300). The second bonding chuck (200) may include a second base unit (210) and a second substrate fixing unit (220).

[0135] The second base portion (210) is a structure of the second bonding chuck (200) and may be a structure that maintains the mechanical strength of the second bonding chuck (200). Specifically, the second base portion (210) may include a heat-resistant material. For example, the second base portion (210) may be formed from a material with excellent thermal stability, such as aluminum alloy, ceramic, or stainless steel. However, this is a non-limiting example, and various types of heat-resistant materials may be included. In this way, the second base portion (210) can secure the overall strength of the second bonding chuck (200) and minimize deformation caused by external vibration or thermal expansion.

[0136] The second substrate fixing part (220) can directly support and fix the second substrate (S2). For example, the second substrate fixing part (220) can fix the edge of the second substrate (S2) and support the second substrate (S2).

[0137] The flow pressure control unit (300) can adjust the gap and curvature between substrates (S1, S2) by controlling the pressure, temperature, or composition of the air layer within the bonding space between the first bonding chuck (100) and the second bonding chuck (200). Specifically, the flow pressure control unit (300) can precisely control the gap and deformation state between substrates by controlling the supply or exhaust of a fluid such as nitrogen, argon, or air within the bonding space to switch the pressure within the bonding space to a positive or negative pressure state.

[0138] In one embodiment, the flow pressure control unit (300) can control the pressure of the air layer between the substrates isotropically or anisotropically through the supply or exhaust of fluid. For example, the pressure of the entire bonding space can be maintained uniformly to ensure flatness of the first substrate (S1) and the second substrate (S2). Alternatively, a pressure difference in a specific area can be generated to induce local expansion or contraction of the first substrate (S1) and the second substrate (S2).

[0139] In this way, the flow pressure control unit (300) can simultaneously control the deformation of the first substrate (S1) fixed by the first bonding chuck (100) and the second substrate (S2) fixed by the second bonding chuck (200). Specifically, unlike the first bonding chuck (100) of FIG. 2 and FIG. 12, the first bonding chuck (100) of FIG. 13 does not fix the first substrate (S1) by vacuum adsorption, so it can be affected by the pressure of the fluid sprayed from the flow pressure control unit (300). Accordingly, the first substrate (S1) and the second substrate (S2) can be controlled to have the same amount of deformation by the flow pressure control unit (300), so it can be applied to substrates (S1, S2) with similar or identical amounts of deformation.

[0140] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the above embodiments and can be manufactured in various different forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical concept or essential features of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0141] 10: Substrate bonding device 100: 1st Bonding Chuck 200: 2nd Bonding Chuck 300: Flow pressure regulator 400: Monitoring Department 500: Control unit 600: Vacuum ejector 700: Pneumatic System

Claims

Claim 1 A substrate bonding device comprising: a first bonding chuck supporting a first substrate; a second bonding chuck positioned opposite to the first bonding chuck and configured to support a second substrate; and a flow pressure regulating unit positioned near the outer periphery of the first bonding chuck and controlled to perform one selected operation among a fluid supply operation for a bonding space between the first bonding chuck and the second bonding chuck and a fluid suction operation from the bonding space, thereby switching the pressure of the bonding space between a pressurized state and a depressurized state; wherein the flow pressure regulating unit comprises a plurality of flow pressure regulating units, each of the plurality of flow pressure regulating units is controlled through a regulator connected independently of each other, and a selected flow pressure regulating unit among the plurality of flow pressure regulating units is controlled to perform one selected operation among the fluid supply operation and the fluid suction operation. Claim 2 delete Claim 3 In claim 1, the flow pressure regulating unit comprises: a housing; and a nozzle portion disposed on the upper part of the housing; a substrate bonding device. Claim 4 In claim 3, the flow pressure control unit is a substrate bonding device further comprising a pressure sensor. Claim 5 delete Claim 6 A substrate bonding device according to claim 1, wherein the first bonding chuck comprises: a first base portion including a vacuum chuck; a deformation plate disposed on the first base portion such that the distance from the first base portion is variable; and a power supply portion for deforming the deformation plate. Claim 7 In claim 1, the first bonding chuck is a substrate bonding device including a vacuum groove. Claim 8 A substrate bonding device according to claim 1, wherein the first bonding chuck comprises: a first base portion; and a first substrate fixing portion disposed on the first base portion. Claim 9 In claim 1, the second bonding chuck comprises: a second base portion; and a second substrate fixing portion disposed on the second base portion; a substrate bonding device. Claim 10 A first bonding chuck that supports a first substrate, comprising a first base portion including a vacuum groove, a deformation plate disposed on the first base portion such that the distance from the first base portion is variable, and a power application portion that deforms the deformation plate; a second bonding chuck comprising a second base portion disposed opposite to the first bonding chuck and a second substrate fixing portion disposed on the second base portion; and a flow pressure control unit comprising a plurality of flow pressure control units segmented and disposed along the outer periphery of the first bonding chuck, which are disposed adjacent to the side of the first bonding chuck and are controlled to perform one selected operation among a fluid supply operation to a bonding space between the first bonding chuck and the second bonding chuck and a fluid suction operation from the bonding space, thereby switching the pressure of the bonding space between a pressurized state and a depressurized state. A substrate bonding device comprising: a control unit that individually controls the plurality of flow pressure control units; wherein each of the plurality of flow pressure control units is controlled through a regulator independently connected to each other, and the control unit controls a selected flow pressure control unit among the plurality of flow pressure control units to perform one selected operation among the fluid supply operation and the fluid suction operation.

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