Display device and method for manufacturing the same

Abstract

The present invention relates to a display device capable of facilitating the manufacture of barriers between light-emitting diode elements and a method for manufacturing the same. In one embodiment, the display device comprises a substrate, pixel electrodes disposed on the substrate, light-emitting diode elements disposed on each of the pixel electrodes, an insulating film disposed on at least one side of each of the pixel electrodes and at least one side of each of the light-emitting diode elements, barriers disposed on the insulating film, and a common electrode disposed on the barriers and the light-emitting diode elements.

Description

Technology Field

[0001] The present invention relates to a display device and a method for manufacturing the same. Background Technology

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. The display device may be a flat panel display device such as a Liquid Crystal Display, a Field Emission Display, or a Light Emitting Display. The light emitting display device may be any one of an organic light emitting display device including an organic light emitting diode element as a light emitting element, an inorganic light emitting display device including an inorganic semiconductor element as a light emitting element, or a micro light emitting diode display device including a micro light emitting diode element as a light emitting element.

[0003] Recently, head-mounted displays (HMDs) including light-emitting display devices are being developed. A Head Mounted Display (HMD) is a glasses-type monitor device for Virtual Reality (VR) or Augmented Reality that is worn in the form of glasses or a helmet, with the focus formed close to the user's eyes.

[0004] A high-resolution, ultra-small light-emitting diode display panel containing micro light-emitting diode elements is applied to the head-mounted display. To prevent light emitted from a micro light-emitting diode element from mixing with light emitted from another adjacent micro light-emitting diode element, a barrier may be placed between the micro light-emitting diode elements. However, since the integration density of the micro light-emitting diode elements is high, the width of the barrier must be thin, making it difficult to manufacture the barrier. The problem to be solved

[0005] The problem that the present invention aims to solve is to provide a display device that can facilitate the manufacture of partitions between light-emitting diode elements.

[0006] Another problem that the present invention aims to solve is to provide a method for manufacturing a display device that can facilitate the manufacture of barriers between light-emitting diode elements.

[0007] The problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0008] In one embodiment for solving the above problem, a display device comprises a substrate, pixel electrodes disposed on the substrate, light-emitting diode elements disposed on each of the pixel electrodes, an insulating film disposed on at least one side of each of the pixel electrodes and at least one side of each of the light-emitting diode elements, partitions disposed on the insulating film, and a common electrode disposed on the partitions and the light-emitting diode elements.

[0009] A method for manufacturing a display device in one embodiment for solving the above other problems comprises the steps of: joining pixel electrodes of a first substrate and light-emitting diode elements of a second substrate; separating the light-emitting diode elements and the second substrate; forming an insulating film on the light-emitting diode elements; forming a barrier material on the insulating film and flattening the barrier material through a polishing process to expose the first electrodes of the light-emitting diode elements to form barriers; and forming a common electrode on the barriers and the light-emitting diode elements.

[0010] In another embodiment for solving the above other problems, a method for manufacturing a display device comprises the steps of: joining pixel electrodes of a first substrate and light-emitting diode elements of a second substrate; separating the light-emitting diode elements and the second substrate; forming an insulating film on the light-emitting diode elements; forming a barrier material on the insulating film and forming barriers to expose the first electrodes of the light-emitting diode elements through a photolithography process; and forming a common electrode on the barriers and the light-emitting diode elements.

[0011] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0012] According to the display device and the method of manufacturing the same according to the embodiments, since each light-emitting diode element is a vertical light-emitting diode element that extends in a third direction (Z-axis direction), a barrier material can be formed to fill between the light-emitting diode elements, and the upper surfaces of the light-emitting diode elements can be exposed through a polishing process such as a Chemical Mechanical Polishing (CMP) process. Therefore, since there is no need to form the width of the barrier thin using a photolithography process or the like, the manufacturing of the barrier between the light-emitting diode elements can be facilitated.

[0013] In addition, according to the display device and the method of manufacturing the same according to the embodiments, since the partitions include a metal material with high reflectivity, light emitted in the lateral direction of the light-emitting diode elements can be reflected from the partitions and output to the top of the light-emitting diode elements. Therefore, the light emission efficiency of the light-emitting diode elements can be increased due to the partitions.

[0014] In addition, according to the display device and the method of manufacturing the same according to the embodiments, since a common electrode is disposed on the partitions, the common electrode can be electrically connected to the partitions. As a result, the resistance of the common electrode can be lowered, thereby reducing or preventing the voltage of the common voltage applied to the common electrode from being lowered by the resistance.

[0015] In addition, according to the display device and the method of manufacturing the same according to the embodiments, by forming the height of the partition wall higher than the height of each light-emitting diode element, a wavelength conversion layer can be placed in the space existing on the light-emitting diode elements between the partition walls. As a result, the image quality of the display device can be improved.

[0016] The effects according to the embodiments are not limited to those exemplified above, and a wider variety of effects are included in this specification. Brief explanation of the drawing

[0017] FIG. 1 is an exemplary drawing showing a display device according to one embodiment. Figure 2 is a layout diagram showing the light-emitting regions of the light-emitting element layer of the display device of Figure 1. FIG. 3 is a cross-sectional view showing an example of a display device cut along I-I' and II-II' of FIG. 2. Figure 4 is an example drawing showing the light-emitting element of Figure 3 in detail. FIG. 5 is a cross-sectional view showing another example of a display device cut along I-I' of FIG. 2. FIG. 6 is a cross-sectional view showing another example of a display device cut along I-I' of FIG. 2. FIG. 7 is a flowchart showing a method for manufacturing a display device according to one embodiment. FIGS. 8 to 14 are cross-sectional views illustrating a method for manufacturing a display device according to one embodiment. FIG. 15 is a flowchart showing a method for manufacturing a display device according to another embodiment. FIGS. 16 to 20 are cross-sectional views illustrating a method for manufacturing a display device according to another embodiment. FIG. 21 is an exemplary drawing showing a virtual reality device including a display device according to one embodiment. Specific details for implementing the invention

[0018] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0019] When elements or layers are referred to as being "on" another element or layer, this includes cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same reference numerals refer to the same components. Shapes, sizes, ratios, angles, numbers, etc., disclosed in the drawings for describing embodiments are exemplary and therefore the invention is not limited to the depicted details.

[0020] Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention.

[0021] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0022] Specific embodiments will be described below with reference to the attached drawings.

[0023] FIG. 1 is an exemplary drawing showing a display device according to one embodiment.

[0024] Referring to FIG. 1, a display device (10) according to one embodiment includes a semiconductor circuit part (110) and a light-emitting element layer (120).

[0025] Although FIG. 1 describes a display device according to one embodiment as a micro-sized light-emitting diode display device including light-emitting diode elements, the embodiments of this specification are not limited thereto. Additionally, FIG. 1 describes a display device according to one embodiment as an LEDoS (Light Emitting Diode on Silicon) in which light-emitting diode elements are arranged on a semiconductor circuit portion (110) formed using a semiconductor process, it should be noted that the embodiments of this specification are not limited thereto.

[0026] The semiconductor circuit portion (110) may be a silicon wafer substrate formed using a semiconductor process. Although the semiconductor circuit portion (110) has been exemplified as having a rectangular planar shape, the embodiments of this specification are not limited thereto. The semiconductor circuit portion (110) may have a polygonal, circular, elliptical, or irregular planar shape other than a rectangle.

[0027] The semiconductor circuit section (110) includes scan lines, data lines, pixel circuit sections, scan driving section (111), data driving section (112), and pad section (113).

[0028] Scan lines may be extended in a first direction (X-axis direction), and data lines may be extended in a second direction. Scan lines and data lines may be connected to pixel circuits. Each pixel circuit may include at least one transistor connected to the scan lines and data lines. Each pixel circuit may receive a data voltage of the data lines when a scan signal is applied to the scan lines. Each pixel circuit may apply a driving current or a driving voltage to the light-emitting diode element so that the light-emitting diode element emits light at a predetermined brightness according to the data voltage. The scan lines, data lines, and pixel circuits of the semiconductor circuit (110) will be described later in conjunction with FIG. 3.

[0029] The scan driver (111) can receive a scan timing signal from the data driver (112) or the pad unit (113). The scan driver (111) can generate scan signals according to the scan timing signal and output scan signals to the scan wires. The scan driver (111) may include a plurality of transistors.

[0030] The data driver (112) can receive digital video data from the pad unit (113). The data driver (112) can convert the digital video data into analog data voltages and output them to the data wires. The data driver (112) may include a plurality of transistors.

[0031] The pad section (113) includes pads for connecting to an external circuit board. The pads can be electrically connected to the scan driver (111) and the data driver (112).

[0032] An external circuit board can be connected to the pads of the pad portion (113) using a low-resistance, high-reliability material such as an anisotropic conductive film or SAP (Self Assembly Anisotropic Conductive Paste). Alternatively, the circuit board can be connected to the pads of the pad portion (113) using an ultrasonic bonding method. The circuit board may be a flexible film such as a flexible printed circuit board (FPCB), a printed circuit board (PCB), a flexible printed circuit (FPC), or a chip-on-film (COF).

[0033] The light-emitting element layer (120) may be disposed on the semiconductor circuit portion (110). The area of ​​the light-emitting element layer (120) may be smaller than the area of ​​the semiconductor circuit portion (110). The light-emitting element layer (120) may overlap with the pixel circuit portions of the semiconductor circuit portion (110) in a third direction (Z-axis direction). The light-emitting element layer (120) may not overlap with the scan driving portion (111), data driving portion (112), and pad portion (113) of the semiconductor circuit portion (110) in a third direction (Z-axis direction).

[0034] The light-emitting element layer (120) may include light-emitting regions in which light-emitting diode elements are arranged to emit light. Each of the light-emitting regions may include a light-emitting diode element. Each light-emitting diode element in each of the light-emitting regions may be electrically connected to a transistor in the pixel circuit of the semiconductor circuit (110). Each light-emitting diode element in each of the light-emitting regions may receive a driving voltage or a driving current from the pixel circuit of the semiconductor circuit (110). Each light-emitting diode element in each of the light-emitting regions may emit light with a predetermined brightness according to the driving voltage or driving current.

[0035] Figure 2 is a layout diagram showing the light-emitting regions of the light-emitting element layer of the display device of Figure 1 and the common electrode connection.

[0036] Referring to FIG. 2, the light-emitting element layer (EML) includes first light-emitting regions (EA1), second light-emitting regions (EA2), third light-emitting regions (EA3), and a common electrode connection (CNT).

[0037] Each of the first light-emitting regions (EA1) indicates a region that emits a first light. A first light-emitting diode element (LDC1) that emits a first light may be disposed in each of the first light-emitting regions (EA1). The first light may be light in the red wavelength band. The red wavelength band may be approximately 600 nm to 750 nm, but the embodiments of the present specification are not limited thereto.

[0038] Each of the second light-emitting regions (EA2) indicates a region that emits second light. A second light-emitting diode element (LDC2) that emits second light may be disposed in each of the second light-emitting regions (EA2). The second light may be light in the green wavelength band. The green wavelength band may be approximately 480 nm to 560 nm, but the embodiments of this specification are not limited thereto.

[0039] Each of the third light-emitting regions (EA3) indicates a region that emits third light. A third light-emitting diode element (LDC3) that emits third light may be disposed in each of the third light-emitting regions (EA3). The third light may be light in the blue wavelength band. The blue wavelength band may be approximately 370 nm to 460 nm, but the embodiments of this specification are not limited thereto.

[0040] The first light-emitting regions (EA1) can be arranged in a second direction (Y-axis direction). The second light-emitting regions (EA2) can be arranged in a second direction (Y-axis direction). The third light-emitting regions (EA3) can be arranged in a second direction (Y-axis direction).

[0041] The first light-emitting regions (EA1), the second light-emitting regions (EA2), and the third light-emitting regions (EA3) may be arranged alternately in the first direction (X-axis direction). For example, the first light-emitting regions (EA1), the second light-emitting regions (EA2), and the third light-emitting regions (EA3) may be arranged in the order of the first light-emitting region (EA1), the second light-emitting region (EA2), and the third light-emitting region (EA3) in the first direction (X-axis direction).

[0042] Although the first light-emitting region (EA1), the second light-emitting region (EA2), and the third light-emitting region (EA3) arranged in the first direction (X-axis direction) have been exemplified as being defined as a single pixel (PX), the embodiments of this specification are not limited thereto. A pixel (PX) may be defined as a minimum light-emitting unit capable of expressing a white gradation.

[0043] The common voltage connection part (CNT) may be a contact hole connecting the common electrode and the common connection electrode. The common electrode may receive a common voltage through the common connection electrode that is electrically connected to the pad part (113).

[0044] The first light-emitting regions (EA1), the second light-emitting regions (EA2), and the third light-emitting regions (EA3) overlap with the pixel circuits in the third direction (Z-axis direction), whereas the common voltage connection (CNT) may not overlap with the pixel circuits in the third direction (Z-axis direction).

[0045] FIG. 3 is a cross-sectional view showing an example of a display device cut along I-I' and II-II' of FIG. 2.

[0046] Referring to FIG. 3, the semiconductor circuit portion (110) includes a first substrate (SUB1) and pixel circuit portions (PXC) each including at least one transistor (TR) and a pixel electrode (PXE). The transistor (TR) includes an active layer (ACT), a gate electrode (GE), a source electrode (SE), and a drain electrode (DE).

[0047] The first substrate (SUB1) is a silicon substrate and may be a p-type substrate (p-Substrate) or an n-type substrate (n-Substrate).

[0048] Active layers (ACTs) each comprising a channel region (CH), a source connection portion (SC), and a drain connection portion (DC) may be disposed on the upper surface of the first substrate (SUB1). The channel region (CH) may be a semiconductor region, and the source connection portion (SC) and the drain connection portion (DC) may be conductive regions. The source connection portion (SC) and the drain connection portion (DC) may be regions doped with impurities.

[0049] An insulating layer (ISO) may be disposed on the first substrate (SUB1). Gate electrodes (GE), source electrodes (SE), and drain electrodes (DE) may be disposed within the insulating layer (ISO).

[0050] Each of the gate electrodes (GE) may overlap with the channel region (CH) in the third direction (Z-axis direction), each of the source electrodes (SE) may overlap with the source connection (SC) in the third direction (Z-axis direction), and each of the drain electrodes (DE) may overlap with the drain connection (DC) in the third direction (Z-axis direction). Each of the source electrodes (SE) may be connected to the source connection (SC) through a first metal hole (MH1). The first metal hole (MH1) refers to an area between the source electrode (SE) and the source connection (SC) where the insulating layer (ISO) is removed and filled with metal. Each of the drain electrodes (DE) may be connected to the drain connection (DC) through a second metal hole (MH2). The second metal hole (MH2) refers to an area between the drain electrode (DE) and the drain connection (DC) where the insulating layer (ISO) is removed and filled with metal.

[0051] Pixel electrodes (PXE) can be placed on an insulating layer (ISO). Each pixel electrode (PXE) can overlap with a drain electrode (DE) in a third direction (Z-axis direction). Each pixel electrode (PXE) can be connected to the drain electrode (DE) through a fourth metal hole (MH4). The fourth metal hole (MH4) refers to an area between the pixel electrode (PXE) and the drain electrode (DE) where the insulating layer (ISO) is removed and the metal is filled. The pixel electrodes (PXE) may include a highly reflective metallic material. For example, the pixel electrodes (PXE) may include an opaque metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), etc. Alternatively, pixel electrodes (PXEs) may include highly reflective metallic materials such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an APC alloy, and a stacked structure of APC alloy and ITO (ITO / APC / ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0052] Light-emitting diode elements (LDCs) may be arranged one-to-one on pixel electrodes (PXEs). The light-emitting diode elements (LDCs) may include a first light-emitting diode element (LDC1), a second light-emitting diode element (LDC2), and a third light-emitting diode element (LDC3).

[0053] Each of the first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) may be a vertical light-emitting diode element that extends in a third direction (Z-axis direction). For example, each of the first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) may have a length in the third direction (Z-axis direction) that is longer than the length in the horizontal direction. The length in the horizontal direction refers to the length in the first direction (X-axis direction) or the length in the second direction (Y-axis direction).

[0054] Each of the first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) may be a micro light-emitting diode element. For example, the length in the third direction (Z-axis direction) of each of the first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) may be approximately 10 μm. For example, the length in the horizontal direction of each of the first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) may be approximately 5 μm.

[0055] As shown in FIG. 4, the first light-emitting diode device (LDC1) includes a p-type electrode (PE), a p-type gallium nitride-based semiconductor layer (PSEM), an active layer (MQW), an n-type gallium nitride-based semiconductor layer (NSEM), and an n-type electrode (NE) in the third direction (Z-axis direction). The p-type electrode (PE) may be the first electrode, and the n-type electrode (NE) may be the second electrode.

[0056] The p-type electrode (PE), the p-type gallium nitride-based semiconductor layer (PSEM), the active layer (MQW), the n-type gallium nitride-based semiconductor layer (NSEM), and the n-type electrode (NE) can be sequentially stacked in a third direction (Z-axis direction).

[0057] The p-type electrode (PE) is a high-reflection electrode and may include Ag or an Ag alloy. The p-type electrode (PE) reflects light emitted from the active layer (MQW) toward the n-type gallium nitride-based compound semiconductor layer (NSEM). The p-type electrode (PE) can be connected to the pixel electrode (PXE).

[0058] A p-type gallium nitride-based semiconductor layer (PSEM) can be disposed on a p-type electrode (PE). The p-type gallium nitride-based semiconductor layer (PSEM) may be a semiconductor layer in which p-type impurities are doped into a gallium nitride (GaN) layer.

[0059] The active layer (MQW) can be disposed on a p-type gallium nitride-based semiconductor layer (PSEM). In the active layer (MQW), electrons injected from the n-type gallium nitride-based semiconductor layer (NSEM) and holes injected from the p-type gallium nitride-based semiconductor layer (PSEM) combine. The active layer (MQW) emits light of a wavelength corresponding to the band gap difference depending on the material forming the active layer (MQW). The active layer (MQW) can be a double heterostructure, a single quantμm well, or multiple quantμm wells. For example, if the first light-emitting diode device (LDC1) emits blue or green light, the multiple quantμm wells may have an InGaN / GaN structure. If the first light-emitting diode device (LDC1) emits ultraviolet light, the multiple quantμm wells may have an AlGaN / InGaN structure.

[0060] An n-type gallium nitride-based semiconductor layer (NSEM) can be disposed on an active layer (MQW). The n-type gallium nitride-based semiconductor layer (NSEM) may be a semiconductor layer in which n-type conductive impurities are doped into a gallium nitride (GaN) layer.

[0061] An n-type electrode (NE) can be disposed on an n-type gallium nitride-based semiconductor layer (NSEM). The n-type electrode (NE) is ohmic-contacted with the n-type gallium nitride-based semiconductor layer (NSEM). The n-type electrode (NE) may comprise Ni, Cr, or Au. For example, the n-type electrode (NE) may be a Ti or Cr-based multilayer structure, such as Ti / Al, Ti / Al / Ni / Au, Cr / Al, or Cr / Al / Ni / Au. The n-type electrode (NE) can be connected to a common electrode (CE).

[0062] Each of the second light-emitting diode element (LDC2) and the third light-emitting diode element (LDC3) can be formed substantially identically or similarly to the first light-emitting diode element (LDC1) described in conjunction with FIG. 4.

[0063] An insulating film (INS) may be disposed on light-emitting diode elements (LDCs). The insulating film (INS) may be disposed on the sides of a first light-emitting diode element (LDC1), the sides of a second light-emitting diode element (LDC2), or the sides of a third light-emitting diode element (LDC3). The insulating film (INS) may be disposed on the sides of a pixel electrode (PXE).

[0064] The insulating film (INS) can be formed from an inorganic film such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. Alternatively, the insulating film (INS) can be formed from an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0065] Partition walls (PTs) may be placed between light-emitting diode elements (LDCs). Partition walls (PTs) may be placed between the first light-emitting diode element (LDC1) and the second light-emitting diode element (LDC2), between the second light-emitting diode element (LDC2) and the third light-emitting diode element (LDC3), and between the first light-emitting diode element (LDC1) and the third light-emitting diode element (LDC3). Partition walls (PTs) may be placed on an insulating film (INS). The bottom surface and sides of the partition walls (PTs) may be in contact with the insulating film (INS).

[0066] The barriers (PTs) may include a conductive material. Additionally, the barriers (PTs) may include a highly reflective metallic material. For example, the barriers (PTs) may include opaque metallic materials such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). In this case, light emitted from the light-emitting diode (LDC) can be reflected from the pixel electrode (PXE) and the barriers (PTs) and output to the top of the light-emitting diode (LDC). Therefore, the light emission efficiency of the light-emitting diode (LDC) can be increased due to the barriers (PTs).

[0067] The upper surfaces of the light-emitting diode elements (LDC), the upper surface of the insulating film (INS), and the upper surfaces of the partitions (PT) can be formed flat through a polishing process such as Chemical Mechanical Polishing (CMP).

[0068] A common electrode (CE) may be disposed on the upper surfaces of light-emitting diode elements (LDCs), the upper surface of an insulating film (INS), and the upper surface of partitions (PTs). The common electrode (CE) may comprise a transparent conductive material. For example, the common electrode (CE) may comprise a transparent conductive oxide (TCO), such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

[0069] The common electrode (CE) can be electrically connected to the partitions (PT). Therefore, the resistance of the common electrode (CE) can be lowered, so that the voltage of the common voltage applied to the common electrode (CE) can be reduced or prevented from being lowered by the resistance.

[0070] No partition (PT) is disposed in the common electrode connection portion (CNT). Therefore, the common electrode (CE) can be connected to the common connection electrode (CBE) through the common electrode connection portion (CNT) penetrating the insulating film (INS). The common connection electrode (CBE) can be disposed on the insulating layer (ISO). The common connection electrode (CBE) can be disposed on the same layer as the pixel electrode (PXE) and may contain the same material. The common connection electrode (CBE) can be connected to the pad portion (113) through an electrode or wiring disposed within the insulating layer (ISO) via a metal hole. Therefore, the common connection electrode (CBE) can receive a common voltage from an external circuit board.

[0071] A black matrix (BM) may be disposed on the common electrode (CE). The black matrix (BM) may overlap with the partitions (PT) in a third direction (Z-axis direction). The black matrix (BM) may be formed of a photosensitive resin capable of blocking light. For example, the black matrix (BM) may include an inorganic black pigment, such as carbon black, or an organic black pigment. Due to the black matrix (BM), light emitted from adjacent light-emitting diode elements among the light-emitting diode elements (LDCs) can be prevented from mixing with each other.

[0072] A planarization film (PLA) may be placed on the common electrode (CE) and the black matrix (BM). The planarization film (PLA) may be formed from an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0073] As shown in FIG. 3, since each of the light-emitting diode elements (LDCs) is a vertical light-emitting diode element that extends in a third direction (Z-axis direction), partitions (PTs) can be formed in the space between the light-emitting diode elements (LDCs). Therefore, the manufacturing process of the partitions (PTs) can be easy.

[0074] In addition, since the partitions (PTs) contain a highly reflective metallic material, light emitted in the lateral direction of the light-emitting diode elements (LDCs) can be reflected from the partitions (PTs) and output to the top of the light-emitting diode elements (LDCs). Therefore, the light emission efficiency of the light-emitting diode elements (LDCs) can be increased due to the partitions (PTs).

[0075] In addition, since the common electrode (CE) is placed on the partitions (PTs), the common electrode (CE) can be electrically connected to the partitions (PTs). As a result, the resistance of the common electrode (CE) can be lowered, thereby reducing or preventing the voltage of the common voltage applied to the common electrode (CE) from being lowered by the resistance.

[0076] FIG. 5 is a cross-sectional view showing another example of a display device cut along I-I' of FIG. 2.

[0077] The embodiment of FIG. 5 differs from the embodiment of FIG. 3 in that the partition (PT') is formed of a photosensitive resin capable of blocking light instead of a highly reflective metallic material, thereby eliminating the black matrix (BM). FIG. 5 will be explained primarily in terms of the differences from the embodiment of FIG. 3.

[0078] Referring to FIG. 5, the barrier (PT') may include an inorganic black pigment such as carbon black or an organic black pigment. Due to the barrier (PT'), light emitted from adjacent light-emitting diode elements among the light-emitting diode elements (LDCs) can be prevented from mixing with each other. Since the role of the black matrix (BM) shown in FIG. 3 is substantially the same as the role of the barrier (PT') shown in FIG. 5, it may be omitted in FIG. 5.

[0079] FIG. 6 is a cross-sectional view showing another example of a display device cut along I-I' of FIG. 2.

[0080] The embodiment of FIG. 6 differs from the embodiment of FIG. 3 in that a wavelength conversion layer (QDL) is disposed on the light-emitting diode elements (LDCs). FIG. 6 will be explained primarily in terms of the differences from the embodiment of FIG. 3.

[0081] Referring to FIG. 6, the height of each of the partitions (PT) may be higher than the height of each of the light-emitting diode elements (LDC). Specifically, the height of the partition (PT) may be higher than the height of the first light-emitting diode element (LDC1), the height of the second light-emitting diode element (LDC2), and the height of the third light-emitting diode element (LDC3). The height of the partition (PT) may be defined as the maximum length of the partition (PT) in the third direction (Z-axis direction). The height of the first light-emitting diode element (LDC1) may be defined as the maximum length of the first light-emitting diode element (LDC1) in the third direction (Z-axis direction). The height of the second light-emitting diode element (LDC2) may be defined as the maximum length of the second light-emitting diode element (LDC2) in the third direction (Z-axis direction). The height of the third light-emitting diode element (LDC3) may be defined as the maximum length of the third light-emitting diode element (LDC3) in the third direction (Z-axis direction).

[0082] A common electrode (CE) may be placed on the upper surfaces of the light-emitting diode elements (LDCs), the upper surface of the insulating film (INS), and parts of the upper surfaces and sides of the partitions (PTs). Since the height of the partitions (PTs) is greater than the height of each light-emitting diode element (LDC), a common electrode (CE) may be placed on the sides of the partitions (PTs) that protrude beyond the light-emitting diode elements (LDCs).

[0083] Since the height of the partition (PT) is greater than the height of each light-emitting diode element (LDC), a space may exist on the light-emitting diode elements (LDC) between the partitions (PT). The space may have a shape similar to a hole.

[0084] A first wavelength conversion layer (QD1) may be disposed in a space formed on a first light-emitting diode element (LDC1). The first wavelength conversion layer (QD1) may overlap with the first light-emitting diode element (LDC1) in a third direction (Z-axis direction). A second wavelength conversion layer (QD2) may be disposed in a space formed on a second light-emitting diode element (LDC2). The second wavelength conversion layer (QD2) may overlap with the second light-emitting diode element (LDC2) in a third direction (Z-axis direction). A transparent insulating film (TINS) may be disposed in a space formed on a third light-emitting diode element (LDC3). The transparent insulating film (TINS) may overlap with the third light-emitting diode element (LDC3) in a third direction (Z-axis direction).

[0085] The first wavelength conversion layer (QD1), the second wavelength conversion layer (QD2), and the transparent insulating film (TINS) may be disposed on the common electrode (CE). The bottom surface and sides of the first wavelength conversion layer (QD1) may be in contact with the common electrode (CE). The bottom surface and sides of the second wavelength conversion layer (QD2) may be in contact with the common electrode (CE). The bottom surface and sides of the transparent insulating film (TINS) may be in contact with the common electrode (CE).

[0086] The first light-emitting diode element (LDC1), the second light-emitting diode element (LDC2), and the third light-emitting diode element (LDC3) can emit short-wavelength light, such as blue light or ultraviolet light. The wavelength band of the short-wavelength light may be approximately 370 nm to 460 nm, but the embodiments of the present specification are not limited thereto.

[0087] The first wavelength conversion layer (QD1) can convert short-wavelength light into a first light. The first light may be light in the red wavelength band. The red wavelength band may be approximately 600 nm to 750 nm, but the embodiments of the present specification are not limited thereto.

[0088] The second wavelength conversion layer (QD2) can convert short-wavelength light into second light. The second light may be light in the green wavelength band. The green wavelength band may be approximately 600 nm to 750 nm, but the embodiments of this specification are not limited thereto.

[0089] Each of the first wavelength conversion layer (QD1) and the second wavelength conversion layer (QD2) may include a base resin, a wavelength shifter, and a scatterer.

[0090] The base resin may be a material with high light transmittance and excellent dispersion characteristics for wavelength shifters and scatterers. For example, the base resin may include organic materials such as epoxy resins, acrylic resins, cardo resins, or imide resins.

[0091] A wavelength shifter can convert or shift the wavelength range of incident light. The wavelength shifter may be a quantum dot, a quantum rod, or a phosphor. The size of the quantum dot in the first wavelength conversion layer (QD1) and the size of the quantum dot in the second wavelength conversion layer (QD2) may be different.

[0092] The scatterer can scatter incident light in random directions without substantially changing the wavelength of the light passing through the first wavelength conversion layer (QD1) or the second wavelength conversion layer (QD2). By doing so, the path length of the light passing through the first wavelength conversion layer (QD1) or the second wavelength conversion layer (QD2) can be increased, thereby increasing the color conversion efficiency by the wavelength shifter. The scatterer may be a light scattering particle. For example, the scatterer may be a metal oxide particle such as titanium oxide (TiO2), silicon oxide (SiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2). Alternatively, the scatterer may be an organic particle such as an acrylic resin or a urethane resin.

[0093] Transparent insulating films (TINS) can transmit short-wavelength light, such as blue light or ultraviolet light, without obstruction. Transparent insulating films (TINS) can be formed from organic films with high transmittance.

[0094] A first color filter (CF1) may be disposed on the first wavelength conversion layer (QD1). The first color filter (CF1) can transmit a first light, for example, light in the red wavelength band. Therefore, among the short-wavelength light emitted from the first light-emitting diode element (LDC1), light that is not converted into the first light may not be transmitted through the first color filter (CF1). In contrast, the first light converted by the first wavelength conversion layer (QD1) can be transmitted through the first color filter (CF1).

[0095] A second color filter (CF2) may be disposed on the second wavelength conversion layer (QD2). The second color filter (CF2) can transmit second light, for example, light in the green wavelength band. Therefore, among the short-wavelength light emitted from the second light-emitting diode element (LDC2), light that is not converted into second light may not pass through the second color filter (CF2). In contrast, the second light converted by the second wavelength conversion layer (352) can pass through the second color filter (CF2).

[0096] A third color filter (CF3) may be disposed on the transparent insulating film (TINS). The third color filter (CF3) can transmit third light, for example, light in the blue wavelength band. Therefore, short-wavelength light emitted from the third light-emitting diode element (LDC3) can pass through the third color filter (CF3).

[0097] The black matrix (BM) can be placed on the common electrode (CE). The black matrix (BM) can overlap with the partitions (PT) in a third direction (Z-axis direction).

[0098] As shown in FIG. 6, by forming the height of the partition (PT) higher than the height of each light-emitting diode element (LDC), a wavelength conversion layer can be placed in the space existing on the light-emitting diode elements (LDC) between the partitions (PT). As a result, the image quality of the display device (10) can be improved.

[0099] FIG. 7 is a flowchart showing a method for manufacturing a display device according to one embodiment. FIGS. 8 to 14 are cross-sectional views for explaining a method for manufacturing a display device according to one embodiment. FIGS. 8 to 14 show cross-sectional views of a display device cut along I-I' of FIG. 2.

[0100] Hereinafter, a method for manufacturing a display device according to one embodiment will be described in detail in conjunction with FIGS. 7 to 14.

[0101] First, as shown in FIG. 8, the pixel electrodes (PXE) of the first substrate (SUB1) and the light-emitting diode elements (LDC) of the second substrate (SUB2) are joined. (S110 in FIG. 7)

[0102] Specifically, pixel circuit portions (PXCs) each comprising a transistor (TR) and a pixel electrode (PXE) are formed on a first substrate (SUB1) using a semiconductor process. In this case, the first substrate (SUB1) is a silicon substrate and may be a p-type substrate (p-Substrate) or an n-type substrate (n-Substrate).

[0103] Meanwhile, each of the light-emitting diode elements (LDC) is a vertical light-emitting diode element that extends in a third direction (Z-axis direction) and can be formed as follows.

[0104] Each of the light-emitting diode devices (LDC) forms an n-type electrode (NE) on a substrate for single-crystal growth and sequentially grows an n-type gallium nitride-based semiconductor layer (NSEM), an active layer (MQW), and a p-type gallium nitride-based semiconductor layer (PSEM). The substrate for single-crystal growth may be a sapphire substrate. The n-type gallium nitride-based semiconductor layer (NSEM), the active layer (MQW), and the p-type gallium nitride-based semiconductor layer (PSEM) may be grown using deposition processes such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE). Then, a p-type electrode (PE) is deposited on the p-type gallium nitride-based semiconductor layer (PSEM), and a substrate for single crystal growth can be separated from the n-type gallium nitride-based semiconductor layer (NSEM) using a laser lift-off (LLO) process.

[0105] Each light-emitting diode (LDC) separated from the substrate for single-crystal growth can be transferred to and bonded to a second substrate (SUB2). The second substrate (SUB2) may be glass or plastic.

[0106] Each of the light-emitting diode elements (LDC) of the second substrate (SUB2) is bonded to each of the pixel electrodes (PXE) of the first substrate (SUB1). Each p-type electrode (PE) of the light-emitting diode elements (LDC) of the second substrate (SUB2) can be bonded to each of the pixel electrodes (PXE) of the first substrate (SUB1) using a thermal compression process or a laser process.

[0107] Secondly, as shown in FIG. 9, the second substrate (SUB2) can be separated from the light-emitting diode elements (LDC). (S120 in FIG. 7)

[0108] In order to easily separate the second substrate (SUB2) from the light-emitting diode elements (LDC), the adhesion force between the light-emitting diode elements (LDC) and the second substrate (SUB2) may be weaker than the adhesion force between the light-emitting diode elements (LDC) and the pixel electrodes (PXE). Additionally, after weakening the adhesion force between the second substrate (SUB2) and the light-emitting diode elements (LDC) using a laser, the second substrate (SUB2) can be separated from the light-emitting diode elements (LDC).

[0109] Third, an insulating film (INS) is formed on the light-emitting diode elements (LDC) as shown in FIG. 10. (S130 in FIG. 7)

[0110] An insulating film (INS) can be deposited over the entire surface of the semiconductor circuit portion (110). Therefore, an insulating film (INS) can be deposited on the light-emitting diode elements (LDC) and the insulating layer (ISO). The insulating film (INS) can be formed on the sides of the first light-emitting diode element (LDC1), the sides of the second light-emitting diode element (LDC2), or the sides of the third light-emitting diode element (LDC3) and the sides of the pixel electrode (PXE).

[0111] Fourth, a barrier material (PTM) is formed on the insulating film (INS) as shown in FIG. 11. Then, as shown in FIG. 12, the barrier material (PTM) is flattened through a polishing process to expose the upper surfaces of the light-emitting diode elements (LDCs) to form barriers (PTs). (S140 in FIG. 7)

[0112] Specifically, the barrier material (PTM) can be formed by electroplating. The height of the barrier material (PTM) may be greater than the height of the light-emitting diode elements (LDC). Therefore, the upper surface of the light-emitting diode elements (LDC) can be covered by the barrier material (PTM).

[0113] The barrier material (PTM) may be a conductive material or a photosensitive resin capable of blocking light. If the barrier material (PTM) is a conductive material, it may include a metallic material with high reflectivity. For example, the barrier material (PTM) may include opaque metallic materials such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). If the barrier material (PTM) is a photosensitive resin, it may include an inorganic black pigment such as carbon black or an organic black pigment.

[0114] Then, the top of the barrier material (PTM) is removed through a polishing process such as Chemical Mechanical Polishing (CMP) to form barriers (PT). As a result, the top surfaces of the light-emitting diode devices (LDCs) and the top surface of the insulating film (INS) can be exposed without being covered by the barriers (PT). Additionally, the top surfaces of the light-emitting diode devices (LDCs), the top surface of the insulating film (INS), and the top surfaces of the barriers (PT) can be formed flat.

[0115] Fifth, a common electrode (CE) is formed on the partitions (PTs) and light-emitting diode elements (LDCs) as shown in FIG. 13. (S150 in FIG. 7)

[0116] A common electrode (CE) can be deposited on the upper surfaces of light-emitting diode elements (LDCs), the upper surface of an insulating film (INS), and the upper surfaces of partitions (PTs). Since no partitions (PTs) are disposed on the common electrode connection (CNT), the common electrode (CE) can be connected to a common connection electrode (CBE) through a common electrode connection (CNT) that penetrates the insulating film (INS). The common connection electrode (CBE) can be disposed on an insulating layer (ISO). The common electrode (CE) may comprise a transparent conductive oxide (TCO), such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0117] Sixth, a black matrix (BM) can be formed on the common electrode (CE) as shown in FIG. 14. (S160 in FIG. 7)

[0118] The black matrix (BM) can be formed to overlap with the partitions (PT) in a third direction (Z-axis direction) through a photolithography process. The black matrix (BM) can be formed from a photosensitive resin capable of blocking light. For example, the black matrix (BM) may include an inorganic black pigment, such as carbon black, or an organic black pigment.

[0119] Meanwhile, if the partitions (PT) are formed of a photosensitive resin capable of blocking light, the black matrix (BM) can be omitted.

[0120] An organic material can be deposited on the common electrode (CE) and the black matrix (BM) to form a planarization film (PLA). The planarization film (PLA) can be formed from organic films such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0121] As shown in FIGS. 8 to 14, since each of the light-emitting diode elements (LDCs) is a vertical light-emitting diode element that extends in a third direction (Z-axis direction), a barrier material (PTM) can be formed to fill between the light-emitting diode elements (LDCs), and the upper surfaces of the light-emitting diode elements (LDCs) can be exposed through a polishing process such as a Chemical Mechanical Polishing (CMP) process. Therefore, since there is no need to form the width of the barrier thin using a photolithography process, the manufacturing of the barrier between the light-emitting diode elements can be facilitated.

[0122] FIG. 15 is a flowchart showing a method for manufacturing a display device according to another embodiment. FIGS. 16 to 20 are cross-sectional views for explaining a method for manufacturing a display device according to another embodiment. FIGS. 16 to 20 show cross-sectional views of a display device cut along I-I' of FIG. 2.

[0123] Since S210, S220, and S230 of FIG. 15 are substantially the same as S110, S120, and S130 described in conjunction with FIG. 7, the description of S210, S220, and S230 of FIG. 15 is omitted.

[0124] As shown in FIG. 16, a barrier material (PTM) is formed on an insulating film (INS). Then, as shown in FIG. 17, barriers (PT) are formed by etching the barrier material (PTM) using a photolithography process to expose the upper surfaces of the light-emitting diode devices (LDCs). (S240 in FIG. 15)

[0125] Specifically, the barrier material (PTM) can be formed by electroplating. The height of the barrier material (PTM) may be greater than the height of the light-emitting diode elements (LDC). Therefore, the upper surface of the light-emitting diode elements (LDC) can be covered by the barrier material (PTM).

[0126] The barrier material (PTM) may be a conductive material. For example, the barrier material (PTM) may include opaque metallic materials such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), etc.

[0127] Then, a portion of the barrier material (PTM) is removed using a photolithography process to form barriers (PT). The upper surfaces of the light-emitting diode elements (LDCs) and the upper surface of the insulating film (INS) can be exposed without being covered by the barriers (PT). The height of the barriers (PT) may be greater than the height of each light-emitting diode element (LDC), and thus a space may exist on the light-emitting diode elements (LDCs) between the barriers (PT). This space may have a shape similar to a hole.

[0128] Then, a common electrode (CE) is formed on the partitions (PTs) and light-emitting diode elements (LDCs) as shown in FIG. 18. (S250 in FIG. 15)

[0129] A common electrode (CE) can be deposited on the upper surfaces of the light-emitting diode elements (LDCs), the upper surface of the insulating film (INS), and parts of the upper surfaces and sides of the partitions (PTs). Since the height of the partitions (PTs) is greater than the height of each light-emitting diode element (LDC), the common electrode (CE) can be placed on the sides of the partitions (PTs) that protrude beyond the light-emitting diode elements (LDCs).

[0130] The common electrode (CE) can be connected to the common connection electrode (CBE) through a common electrode connection (CNT) that penetrates the insulating layer (INS) and the barriers (PT). The common connection electrode (CBE) can be placed on the insulating layer (ISO). The common electrode (CE) may comprise a transparent conductive oxide (TCO), such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

[0131] Then, as shown in FIG. 19, a first wavelength conversion layer (QD1) is formed on a first light-emitting diode element (LDC1) among the light-emitting diode elements (LDCs), a second wavelength conversion layer (QD2) is formed on a second light-emitting diode element (LDC2), and a transparent insulating film (TINS) is formed on a third light-emitting diode element (LDC3). (S260 of FIG. 15)

[0132] The first wavelength conversion layer (QD1), the second wavelength conversion layer (QD2), and the transparent insulating film (TINS) may be disposed on the common electrode (CE). The bottom surface and sides of the first wavelength conversion layer (QD1) may be in contact with the common electrode (CE). The bottom surface and sides of the second wavelength conversion layer (QD2) may be in contact with the common electrode (CE). The bottom surface and sides of the transparent insulating film (TINS) may be in contact with the common electrode (CE).

[0133] Each of the first wavelength conversion layer (QD1) and the second wavelength conversion layer (QD2) may include a base resin, a wavelength shifter, and a scatterer. The transparent insulating film (TINS) may be formed of an organic film with high transmittance.

[0134] The first wavelength conversion layer (QD1) can overlap with the first light-emitting diode element (LDC1) in the third direction (Z-axis direction). The second wavelength conversion layer (QD2) can overlap with the second light-emitting diode element (LDC2) in the third direction (Z-axis direction). The transparent insulating film (TINS) can overlap with the third light-emitting diode element (LDC3) in the third direction (Z-axis direction).

[0135] Then, a first color filter (CF1) is formed on the first wavelength conversion layer (QD1), a second color filter (CF2) is formed on the second wavelength conversion layer (QD2), a third color filter (CF3) is formed on the transparent insulating film (TINS), and a black matrix (BM) is formed on the partitions (PT). (S270 of FIG. 15)

[0136] A first color filter (CF1) can be formed on the first wavelength conversion layer (QD1) through a photolithography process. The first color filter (CF1) may be a red color filter that transmits a first light, for example, light in the red wavelength band.

[0137] A second color filter (CF2) can be formed on the second wavelength conversion layer (QD2) through a photolithography process. The second color filter (CF2) may be a green color filter that transmits a second light, for example, light in the green wavelength band.

[0138] A third color filter (CF3) can be formed on the transparent insulating film (TINS) through a photolithography process. The third color filter (CF3) may be a blue color filter that transmits a third light, for example, light in the blue wavelength band.

[0139] A black matrix (BM) can be formed on the partitions (PT) through a photolithography process. The black matrix (BM) can be formed from a photosensitive resin capable of blocking light. For example, the black matrix (BM) may include an inorganic black pigment, such as carbon black, or an organic black pigment.

[0140] An organic material can be deposited on the common electrode (CE) and the black matrix (BM) to form a planarization film (PLA). The planarization film (PLA) can be formed from organic films such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0141] As shown in FIGS. 15 to 20, by forming the height of the partition (PT) higher than the height of each light-emitting diode element (LDC), a wavelength conversion layer can be placed in the space existing on the light-emitting diode elements (LDC) between the partitions (PT). As a result, the image quality of the display device (10) can be improved.

[0142] FIG. 21 is an exemplary drawing showing a virtual reality device including a display device according to one embodiment. FIG. 21 shows a virtual reality device (1) to which a display device (10) according to one embodiment is applied.

[0143] Referring to FIG. 21, a virtual reality device (1) according to one embodiment may be a device in the form of glasses. A virtual reality device (1) according to one embodiment may have a display device (10), a left eye lens (10a), a right eye lens (10b), a support frame (20), eyeglass frame legs (30a, 30b), a reflective member (40), and a display device housing (50).

[0144] Although FIG. 21 illustrates a virtual reality device (1) including eyeglass frame temples (30a, 30b), the virtual reality device (1) according to one embodiment may be applied to a head-mounted display that includes a head-mounting band that can be mounted on the head instead of the eyeglass frame temples (30a, 30b). That is, the virtual reality device (1) according to one embodiment is not limited to that shown in FIG. 21 and can be applied in various forms to various other electronic devices.

[0145] The support frame (20) serves to support the left eye lens (10a) and the right eye lens (10b). The support frame (20) can be placed on the upper surface of the left eye lens (10a) and the upper surface of the right eye lens (10b). The support frame (20) can be formed to be elongated in the width direction (X-axis direction) of the right eye lens (110).

[0146] The first eyeglass frame leg (30a) can be fixed to the left end of the support frame (20). The second eyeglass frame leg (30b) can be fixed to the right end of the support frame (20).

[0147] Each of the first eyeglass frame leg (30a) and the second eyeglass frame leg (30b) may be fixed to the support frame (20) by a fixing member such as a screw. Alternatively, the support frame (20), the first eyeglass frame leg (30a), and the second eyeglass frame leg (30b) may be formed integrally. Each of the support frame (20), the first eyeglass frame leg (30a), and the second eyeglass frame leg (30b) may comprise plastic, metal, or both plastic and metal.

[0148] Each of the left eye lens (10a) and the right eye lens (10b) can be formed of glass or plastic to be transparent or translucent. As a result, the user can see images of reality through the left eye lens (10a) and the right eye lens (10b). The left eye lens (10a) and the right eye lens (10b) may have refractive power considering the user's eyesight.

[0149] Each of the left eye lens (10a) and the right eye lens (10b) may be formed as a hexahedron composed of six square planes. The left eye lens (10a) may be positioned to face the user's left eye (LE), and the right eye lens (10b) may be positioned to face the user's right eye (RE). Each of the left eye lens (10a) and the right eye lens (10b) is not limited to what is shown in FIG. 21 and may be formed as a polyhedron using polygonal planes other than squares. Additionally, each of the left eye lens (10a) and the right eye lens (10b) may be formed in other shapes other than polyhedra, such as a cylinder, an ellipse, a semi-ellipse, a distorted cylinder, or a distorted semi-cylinder. A distorted cylinder and a semi-cylinder refer to a cylinder and a semi-cylinder with non-uniform diameters.

[0150] The display device storage section (50) may be positioned at the right end of the support frame (20). The display device storage section (50) may be positioned on the front surface of the support frame (20). The display device (10) and the reflective member (40) may be stored in the display device storage section (50).

[0151] The image displayed on the display device (10) can be reflected from the reflective member (40) and provided to the user's right eye through the right eye lens (10b). As a result, the user can view the virtual reality image displayed on the display device (10) through their right eye.

[0152] FIG. 21 illustrates only that the display device housing (50) is positioned at the right end of the support frame (20), but the embodiments of this specification are not limited thereto. For example, the display device housing (50) may be positioned at the left end of the support frame (20), in which case the image displayed on the display device (10) may be reflected from the reflective member (40) and provided to the user's left eye through the left eye lens (10a). As a result, the user can view the virtual reality image displayed on the display device (10) through the left eye. Alternatively, the display device housing (50) may be positioned at both the left end and the right end of the support frame (20), in which case the user can view the virtual reality image displayed on the display device (10) through both the left eye and the right eye.

[0153] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing the technical concept or essential features thereof. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0154] 10: Display device SUB1: First substrate PXE: Pixel electrode LDC: Light-emitting diode elements LDC1: First light-emitting diode element LDC2: Second light-emitting diode element LDC3: Third light-emitting diode element INS: Insulating film PT: Barrier CE: Common electrode PE: p-type electrode MQW: emissive layer NE: n-type electrode QD1: first wavelength conversion layer QD2: Second wavelength conversion layer TINS: Transparent insulating film CF1: 1st color filter CF2: 2nd color filter CF3: Third Color Filter BM: Black Matrix PLA: Planarization film CNT: Common electrode connection CBE: Common connection electrode PTM: Barrier material

Claims

Claim 1 A display device comprising: a substrate; pixel electrodes disposed on the substrate; light-emitting diode elements disposed on each of the pixel electrodes; an insulating film disposed on at least one side of each of the pixel electrodes and at least one side of each of the light-emitting diode elements; partitions disposed on the insulating film; a common electrode disposed on the partitions and the light-emitting diode elements; and wavelength conversion layers disposed on each of the light-emitting diode elements, wherein the partitions are conductive, the insulating film is located on the lower surface and sides of each of the partitions, any one of the partitions is disposed on the side of any one of the light-emitting diode elements and the side of any one of the wavelength conversion layers, the insulating film is disposed between each of the partitions and each of the light-emitting diode elements, and the common electrode is disposed between each of the partitions and each of the wavelength conversion layers. Claim 2 In claim 1, each of the light-emitting diode elements comprises a first electrode, a light-emitting layer, and a second electrode sequentially stacked in the thickness direction of the substrate. Claim 3 A display device according to claim 2, wherein the first electrode is in contact with one of the pixel electrodes, and the second electrode is in contact with the common electrode. Claim 4 In claim 1, the common electrode is a display device comprising a transparent conductive material. Claim 5 delete Claim 6 In claim 1, the above partitions are a display device comprising an opaque metallic material. Claim 7 In claim 1, the partitions are a display device electrically connected to the common electrode. Claim 8 A display device according to claim 1, further comprising a black matrix disposed on the common electrode and overlapping with the partitions in the thickness direction of the substrate. Claim 9 In claim 1, the above partitions are a display device comprising a photosensitive resin that blocks light. Claim 10 In claim 1, the height of the partition is higher than the height of the light-emitting diode element in the display device. Claim 11 delete Claim 12 A display device according to claim 10, wherein the wavelength conversion layers include: a first wavelength conversion layer that overlaps with a light-emitting diode element in a first light-emitting region among the light-emitting diode elements in the thickness direction of the substrate; and a second wavelength conversion layer that overlaps with a light-emitting diode element in a second light-emitting region among the light-emitting diode elements in the thickness direction of the substrate, and further comprising a transparent insulating film that overlaps with a light-emitting diode element in a third light-emitting region among the light-emitting diode elements in the thickness direction of the substrate. Claim 13 In claim 12, the first wavelength conversion layer, the second wavelength conversion layer, and the transparent insulating film are a display device disposed on the common electrode. Claim 14 In claim 12, the first wavelength conversion layer, the second wavelength conversion layer, and the transparent insulating film are a display device disposed in the spaces between the partitions. Claim 15 A display device according to claim 12, further comprising: a first color filter disposed on the first wavelength conversion layer; a second color filter disposed on the second wavelength conversion layer; and a third color filter disposed on the transparent insulating film. Claim 16 A display device according to claim 1, wherein the common electrode is connected to a common connection electrode disposed on the substrate through a common electrode connection portion penetrating the insulating film. Claim 17 A method for manufacturing a display device comprising: a step of joining pixel electrodes of a first substrate and light-emitting diode elements of a second substrate; a step of separating the light-emitting diode elements and the second substrate; a step of forming an insulating film on the light-emitting diode elements; a step of forming a barrier material on the insulating film and forming barriers by flattening the barrier material through a polishing process to expose the first electrodes of the light-emitting diode elements; and a step of forming a common electrode on the barriers and the light-emitting diode elements. Claim 18 In claim 17, a method for manufacturing a display device wherein each of the light-emitting diode elements comprises a first electrode, a light-emitting layer, and a second electrode sequentially stacked in the thickness direction of the first substrate. Claim 19 A method for manufacturing a display device comprising the steps of: joining pixel electrodes of a first substrate and light-emitting diode elements of a second substrate; separating the light-emitting diode elements and the second substrate; forming an insulating film on the light-emitting diode elements; forming a barrier material on the insulating film and forming barriers to expose the first electrodes of the light-emitting diode elements through a photolithography process; and forming a common electrode on the barriers and the light-emitting diode elements. Claim 20 A method for manufacturing a display device according to claim 19, further comprising the steps of: forming first wavelength conversion layers on a first light-emitting diode element among the light-emitting diode elements, forming a second wavelength conversion layer on a second light-emitting diode element, and forming a transparent insulating film on a third light-emitting diode element; and forming a first color filter on the first wavelength conversion layer, forming a second color filter on the second wavelength conversion layer, and forming a third color filter on the transparent insulating film.

Images