Method of removing contaminants formed on the surface of the yttria coating layer

Abstract

The present invention relates to a method for removing contaminants formed on the surface of an yttria-based coating layer. According to the present invention, a method for removing contaminants formed on the surface of an yttria-based coating layer can be provided, which effectively removes said contaminants without affecting the surface roughness and thickness of the coating layer by irradiating the contaminants formed on the surface of the yttria-based coating layer in a semiconductor process with Intense Pulsed Light (IPL).

Description

Technology Field

[0001] The present invention relates to a method for removing contaminants formed on the surface of an yttria-based coating layer, and more specifically, to a method for effectively removing contaminants formed on the surface of an yttria-based coating layer without affecting the surface roughness and thickness of the coating layer by irradiating the contaminants formed on the surface of the yttria-based coating layer in a semiconductor process with Intense Pulsed Light (IPL). Background Technology

[0002] Generally, methods using solvents such as acetone and IPA (isopropyl alcohol) have been used to remove oil adsorbed on the surfaces and uneven areas of semiconductor processed products. Furthermore, in the case of products with photoresist and sticky substances on the surfaces of semiconductor equipment components, conventional methods have also involved removing them using solvents such as acetone and IPA, which are harmful to the human body. The solvents currently in use are toxic substances harmful to the human body, causing inflammation of the nose, throat, lungs, and eyes at low concentrations and paralyzing the central nervous system at high concentrations.

[0003] Hydrogen fluoride (fluorine compound) is one of the essential gases in the semiconductor etching process. However, if the hydrogen fluoride (fluorine compound) used in the etching process remains on the coating surface, it affects the characteristics of the coating, leading to changes in the semiconductor process and the generation of fine particles, which in turn leads to a decrease in wafer yield. Nevertheless, it is difficult to remove fluorine ions that have penetrated the coating surface without damaging the coating layer. The problem to be solved

[0004] The objective of the present invention is to provide a method for removing contaminants formed on the surface of an yttria-based coating layer.

[0005] In addition, another objective of the present invention is to provide a method for removing contaminants formed on the surface of an yttria-based coating layer in a semiconductor process by irradiating the contaminants formed on the surface of the yttria-based coating layer with Intense Pulsed Light (IPL) to effectively remove the contaminants without affecting the surface roughness and thickness of the coating layer. means of solving the problem

[0006] According to one aspect of the present invention, embodiments of the present invention include the steps of: preparing a semiconductor structure comprising: a material to be coated; and a primary coating layer comprising an yttria-based coating layer having a contaminant and provided on one surface of the material to be coated; setting operating conditions of a xenon lamp; and removing at least a portion of the contaminant by irradiating an Intense Pulsed Light (IPL) onto the semiconductor structure using the xenon lamp to obtain a secondary coating layer.

[0007] In one embodiment, the yttria-based coating layer may include one or more of Y2O3, YOF, YF3, YSZ, YAG, and Al2O3.

[0008] In one embodiment, the operating conditions of the xenon lamp may include an output voltage of 800 to 1000 V, a frequency of 1 to 20 Hz, and a processing time of 1 to 1000 s.

[0009] In one embodiment, the irradiation conditions of the IPL are an IPL pulse width of 5 to 15 ms, a number of IPL pulses of 30 to 400, and an IPL intensity per unit area of ​​12 to 20 J / cm² 2 and the total intensity of IPL is 500–7000 J / cm² 2 It can include things that are.

[0010] In one embodiment, the primary coating layer may contain 0.1 to 80 wt% of fluorine (F).

[0011] In one embodiment, the secondary coating layer may comprise 10 to 75% of the fluorine (F) content of the primary coating layer.

[0012] In one embodiment, the surface roughness (Ra) of the primary coating layer may include 0 to 8 μm.

[0013] In one embodiment, the surface roughness (Ra) of the secondary coating layer may include 100 to 110% of the surface roughness (Ra) of the primary coating layer.

[0014] In one embodiment, the thickness of the primary coating layer may be 50 to 500 μm.

[0015] In one embodiment, the thickness of the secondary coating layer may be 90 to 100% of the thickness of the primary coating layer. Effects of the invention

[0016] According to the present invention as described above, a method for removing contaminants formed on the surface of an yttria-based coating layer can be provided.

[0017] In addition, according to the present invention, a method for removing contaminants formed on the surface of an yttria-based coating layer can be provided, which effectively removes said contaminants without affecting the surface roughness and thickness of the coating layer by irradiating the contaminants formed on the surface of the yttria-based coating layer in a semiconductor process with Intense Pulsed Light (IPL). Brief explanation of the drawing

[0018] FIG. 1 is a flowchart of a method for removing contaminants formed on the surface of an yttria-based coating layer according to one embodiment of the present invention. FIGS. 2 and FIGS. 3 are drawings of a semiconductor structure according to an embodiment of the present invention. Figure 4 is a surface analysis photograph of a specimen according to one embodiment of the present invention. FIG. 5 is a photograph of the surface of a specimen according to one embodiment of the present invention magnified 35 times. Figure 6 is an EDX Mapping analysis photograph of a specimen according to one embodiment of the present invention. FIG. 7 is a graph showing the surface roughness measurement values ​​according to the conditions of a specimen according to one embodiment of the present invention. FIG. 8 is a graph showing the thickness measurement values ​​of a specimen according to one embodiment of the present invention under different conditions. Specific details for implementing the invention

[0019] Specific details of other embodiments are included in the detailed description and drawings.

[0020] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. Unless otherwise specified in the following description, all numbers, values, and / or expressions representing components, reaction conditions, and the content of components in the present invention should be understood as being modified by the term "approximately" in all cases, as these numbers are approximations reflecting the various uncertainties of measurement that occur in obtaining these values ​​among essentially different things. Furthermore, where a numerical range is disclosed in this description, such range is continuous and, unless otherwise indicated, includes all values ​​from the minimum value of such range to the maximum value including said maximum value. Furthermore, where such range refers to an integer, unless otherwise indicated, it includes all integers including from the minimum value to said maximum value including said maximum value.

[0021] Additionally, when a range is described for a variable in the present invention, it will be understood that the variable includes all values ​​within the described range, including the described endpoints of the range. For example, the range "5 to 10" will be understood to include not only the values ​​5, 6, 7, 8, 9, and 10, but also any sub-ranges such as 6 to 10, 7 to 10, 6 to 9, 7 to 9, etc., and any values ​​between integers valid for the category of the described range, such as 5.5, 6.5, 7.5, 5.5 to 8.5, and 6.5 to 9. For example, the range “10% to 30%” will be understood to include all integers including values ​​such as 10%, 11%, 12%, 13%, etc. and up to 30%, as well as any sub-range such as 10% to 15%, 12% to 18%, 20% to 30%, etc., and any value between valid integers within the stated range category such as 10.5%, 15.5%, 25.5%, etc.

[0022] FIG. 1 is a flowchart of a method for removing contaminants formed on the surface of an yttria-based coating layer according to one embodiment of the present invention, and FIG. 2 and FIG. 3 are drawings of a semiconductor structure according to one embodiment of the present invention.

[0023] Referring to FIGS. 1 to 3, a method for removing contaminants formed on the surface of an yttria-based coating layer according to one embodiment of the present invention comprises: a step (S100) of preparing a semiconductor structure (100) having a coating material (110); and a first coating layer (140) having a yttria-based coating layer (120) having contaminants (130) provided on one surface of the coating material (110); a step (S200) of setting operating conditions of a xenon lamp; and a step (S300) of removing at least a portion of the contaminants (130) by irradiating an Intense Pulsed Light (IPL) using the xenon lamp onto the semiconductor structure (100) to obtain a second coating layer (150).

[0024] In the step (S100) of preparing the above semiconductor structure (100), the yttria-based coating layer (120) may include one or more of Y2O3, YOF, YF3, YSZ, YAG, and Al2O3. Specifically, it is preferable that the yttria-based coating layer (120) includes Y2O3.

[0025] In the step (S200) of setting the operating conditions of the above xenon lamp, the above xenon lamp emits light by passing electricity through ionized high-pressure xenon gas, and the structure of the above xenon lamp is such that the xenon gas is filled inside a quartz or heat-resistant glass tube and a metal electrode made of tungsten can be formed.

[0026] The wavelength of the above xenon lamp may include 200 to 125 nm, and the energy density is 1 to 45 J / cm². 2 It may include.

[0027] The operating conditions of the above xenon lamp may include an output voltage of 800 to 1000 V, a frequency of 1 to 20 Hz, and a processing time of 1 to 1000 s.

[0028] The irradiation conditions for the above IPL (Intense Pulsed Light) are an IPL pulse width of 5–15 ms, a pulse count of 30–400, and an IPL intensity per unit area of ​​12–20 J / cm². 2 and the total intensity of IPL is 500–7000 J / cm² 2 It can include things that are.

[0029] If the above IPL pulse width is less than 5ms, light must be irradiated at a high intensity relative to the time, which may cause stability and cost issues due to high voltage, and if it exceeds 15ms, pulsed light is not irradiated, which may result in a decrease in the effectiveness of removing contaminants. Specifically, it is preferable that the above IPL pulse width be 7 to 12ms.

[0030] If the number of IPL pulses is less than 30, the pulse intensity becomes relatively too strong, which may cause blackening on the surface of the coating layer; if it exceeds 400, the pulse intensity becomes relatively weak, which may reduce the effectiveness of removing contaminants. Specifically, it is preferable that the number of IPL pulses be 30 to 400.

[0031] The above IPL intensity per unit area is 12 J / cm² 2 If it is less than 20J / cm², the effect of removing the above-mentioned pollutants may be reduced. 2 If it exceeds this limit, the surface of the coating layer may burn and blacken. Specifically, the IPL intensity per unit area is 15 to 18 J / cm² 2 It is desirable that it is.

[0032] The above total IPL intensity is 500 J / cm² 2 If it is less than, the above pollutant removal effect may be reduced, and 7000 J / cm 2If exceeded, the surface of the coating layer may burn and blacken. Specifically, the total IPL intensity is 4500~5500 J / cm² 2 It is desirable that it is.

[0033] The step (S300) of obtaining the secondary coating layer (150) can be performed by removing at least a portion of the contaminant (130) by IPL light irradiated from the xenon lamp to obtain the secondary coating layer (150).

[0034] The above primary coating layer (140) may contain 0.1 to 80 wt% of fluorine (F).

[0035] The above secondary coating layer (150) may contain 10 to 75% of the fluorine (F) content of the above primary coating layer (140).

[0036] The surface roughness (Ra) of the above primary coating layer (140) may include 0 to 8 μm.

[0037] The surface roughness (Ra) of the secondary coating layer (150) may be 100 to 110% of the surface roughness (Ra) of the primary coating layer (140). If the surface roughness of the secondary coating layer (150) exceeds 110% of the surface roughness (Ra) of the primary coating layer (140), the intensity of the IPL from the xenon lamp is too strong, causing damage to the coating layer, and thus the process efficiency may be reduced. Specifically, it is preferable that the surface roughness (Ra) of the secondary coating layer (150) be 100 to 105% of the surface roughness (Ra) of the primary coating layer (140).

[0038] The thickness of the first coating layer (140) may be 50 to 500 μm.

[0039] The thickness of the secondary coating layer (150) may be 90 to 100% of the thickness of the primary coating layer (140). If the thickness of the secondary coating layer (150) is less than 90% of the thickness of the primary coating layer (140), the intensity of the IPL from the xenon lamp is too strong, causing damage to the coating layer, and thus the process efficiency may be reduced. Specifically, it is preferable that the surface roughness (Ra) of the secondary coating layer (150) be 95 to 100% of the thickness of the primary coating layer (140).

[0040] Examples and comparative examples of the present invention are described below. However, the following examples are merely preferred embodiments of the present invention, and the scope of the present invention is not limited by the following examples.

[0041] (Manufacturing Example 1) Specimen preparation

[0042] A semiconductor structure specimen including a coated material having a Y2O3 coating layer formed with contaminants was prepared in a size of 3*4 cm.

[0043] (Example 1)

[0044] Contaminants were removed from the specimen prepared in Manufacturing Example 1 above by irradiating it with IPL using a xenon lamp. Here, the xenon lamp and IPL irradiation conditions are shown in Table 1 below. Here, a xenon lamp (myIPL-P1000A, Metasol) was used.

[0045] (Comparison Example 1)

[0046] Contaminants were removed from the specimen prepared in Manufacturing Example 1 above by irradiating it with IPL using a xenon lamp. Here, the xenon lamp and IPL irradiation conditions are shown in Table 1 below. Here, the xenon lamp used was (myIPL-P1000A, Metasol).

[0047] (Comparison Example 2)

[0048] Contaminants were removed from the specimen prepared in Manufacturing Example 1 above by irradiating it with IPL using a xenon lamp. Here, the xenon lamp and IPL irradiation conditions are shown in Table 1 below. Here, the xenon lamp used was (myIPL-P1000A, Metasol).

[0049] division Xenon lamp setting conditions IPL irradiation conditions Total intensity (J / cm²) 2 )(Number of times * Strength per unit area) Voltage (V) Frequency (Hz) Time(s) Width (ms) Number of times Strength per unit area (J / cm²) 2 ) Comparison Example 1 900 3 10 10 30 16.56 496 Comparison Example 2 900 3 50 10 150 16.56 2484 Example 1 900 3 100 10 300 16.56 4968

[0050] (Experimental Example 1) Surface Analysis

[0051] The surfaces of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 were analyzed. Here, a 3D digital microscope (RH-2000, Hirox Korea) was used as the equipment for analyzing the surface.

[0052] FIG. 4 is a surface analysis photograph of a specimen according to one embodiment of the present invention, and FIG. 5 is a photograph of the surface of a specimen according to one embodiment of the present invention magnified to 35x.

[0053] Referring to Figures 4 and 5, the color and degree of impurities on the surface of the specimens of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 were examined. In Manufacturing Example 1, the surface color was yellowish, and black stains (contaminants) were observed. On the other hand, Comparative Example 1 and Comparative Example 2 showed brighter colors compared to Manufacturing Example 1, but some black stains (contaminants) remained. In Example 1, the surface color was brightened to a white hue compared to Comparative Example 1 and Comparative Example 2, and the black stains (contaminants) had almost disappeared, confirming that the contaminants formed on one side of the YOF coating layer had been removed.

[0055] (Experimental Example 2) EDX Mapping Analysis Experiment

[0056] EDX Mapping analysis was performed to measure the degree of pollutant reduction in the above Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1. Here, X Flash (Brucker) was used for EDX analysis.

[0057] Figure 6 is an EDX analysis photograph of a specimen according to one embodiment of the present invention.

[0058] division Manufacturing Example 1 Comparison Example 1 Comparison Example 2 Example 1 Carbon 3.30 8.31 8.71 5.65 Oxygen 6.54 7.75 10.16 9.33 Fluorine 33.96 20.85 15.43 6.23 Yttrium 56.20 63.09 65.70 78.79

[0059] Referring to Figure 6 and Table 2 above, the Fluorine value represents the amount of contaminants. When comparing the Fluorine values ​​of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1, Manufacturing Example 1 was 33.96, Comparative Example 1 was 20.85, Comparative Example 2 was 15.43, and Example 1 was 6.23. This indicates that the amount of contaminants removed by Example 1 was the highest, and it was found that the xenon lamp and IPL settings configured in Example 1 resulted in the highest contaminant removal rate.

[0060] (Experimental Example 3) Surface Roughness Measurement

[0061] A surface roughness meter (SJ-210, Mitutoyo) was used to measure the surface roughness of the yttria-based coating layers of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1.

[0062] FIG. 7 is a graph showing the surface roughness measurement values ​​according to the conditions of a specimen according to one embodiment of the present invention.

[0063] division Manufacturing Example 1 Comparison Example 1 Comparison Example 2 Example 1 Surface roughness (Ra) (㎛) 0.588 0.644 0.631 0.595

[0064] Referring to Figure 7 and Table 3 above, the surface roughness of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 was measured, and the error range compared to Manufacturing Example 1 was 0.056 for Comparative Example 1, 0.043 for Comparative Example 2, and 0.007 for Example 1, with the error range compared to Example 1 being the smallest. This is within the error range of the measuring equipment, and the surface roughness of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 appeared similar; this indicates that the surface roughness of the yttria-based coating layer is hardly affected after the removal of contaminants.

[0065] (Experiment Example 4) Thickness Measurement

[0066] A digital film thickness gauge (elcometer, A456) was used to measure the thickness of the yttria-based coating layer of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 above.

[0067] FIG. 8 is a graph showing the thickness measurement values ​​of a specimen according to one embodiment of the present invention under different conditions.

[0068] division Manufacturing Example 1 Comparison Example 1 Comparison Example 2 Example 1 Thickness (㎛) 228 228 227 227

[0069] Referring to Figure 8 and Table 4 above, the thickness of the yttria-based coating layer of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 was measured, and the error range compared to Manufacturing Example 1 was 0 for Comparative Example 1, 1 for Comparative Example 2, and 1 for Example 1. This is within the error range of the measuring equipment, and the thicknesses of Manufacturing Example 1, Comparative Example 1, Comparative Example 2, and Example 1 were similar, which means that the thickness of the yttria-based coating layer is hardly affected after the contaminants are removed.

[0070] A person skilled in the art to which the present invention pertains will understand that the present invention may be implemented in other specific forms without altering its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims set forth below rather than by the detailed description above, and all modifications or variations derived from the meaning and scope of the claims and equivalent concepts should be interpreted as being included within the scope of the present invention. Explanation of the symbols

[0071] 100: Structure for semiconductors, 110: Coated material 120: Yttria-based coating layer, 130: Contaminants 140: 1st coating layer, 150: 2nd coating layer S100: Step of preparing a semiconductor structure S200: Step for setting the operating conditions of the xenon lamp S300: Step of obtaining a secondary coating layer

Claims

Claim 1 A method for removing contaminants formed on the surface of an yttria-based coating layer, comprising: a material to be coated; and a primary coating layer comprising an yttria-based coating layer provided on one surface of the material to be coated and including contaminants formed on the surface of the yttria-based coating layer; a step of setting operating conditions of a xenon lamp; and a step of removing at least a portion of the contaminants formed on the surface of the yttria-based coating layer by irradiating the semiconductor structure with an Intense Pulsed Light (IPL) using the xenon lamp, thereby obtaining a secondary coating layer composed of an yttria-based coating layer from which contaminants have been removed. Claim 2 A method for removing contaminants formed on the surface of a yttria-based coating layer according to claim 1, wherein the yttria-based coating layer comprises one or more of Y2O3, YOF, YF3, YSZ, YAG, and Al2O3. Claim 3 A method for removing contaminants formed on the surface of an yttria-based coating layer according to claim 1, wherein the operating conditions of the xenon lamp are an output voltage of 800 to 1000 V, a frequency of 1 to 20 Hz, and a processing time of 1 to 1000 s. Claim 4 In claim 1, the irradiation conditions of the IPL are as follows: the IPL pulse width is 5 to 15 ms, the number of IPL pulses is 30 to 400, and the IPL intensity per unit area is 12 to 20 J / cm² 2 The total intensity of the IPL is 500–7000 J / cm² 2 A method for removing contaminants formed on the surface of an yttria-based coating layer, including the following. Claim 5 A method for removing contaminants formed on the surface of an yttria-based coating layer comprising 0.1 to 80 wt% fluorine (F) in the first coating layer, wherein the first coating layer comprises 0.1 to 80 wt%. Claim 6 A method for removing contaminants formed on the surface of an yttria-based coating layer according to claim 1, wherein the secondary coating layer comprises 10 to 75% of the fluorine (F) content of the primary coating layer. Claim 7 A method for removing contaminants formed on the surface of an yttria-based coating layer, wherein the surface roughness (Ra) of the primary coating layer is 0 to 8 μm in the first paragraph. Claim 8 A method for removing contaminants formed on the surface of an yttria-based coating layer according to claim 1, wherein the surface roughness (Ra) of the secondary coating layer comprises 100 to 110% of the surface roughness (Ra) of the primary coating layer. Claim 9 A method for removing contaminants formed on the surface of an yttria-based coating layer according to claim 1, wherein the thickness of the primary coating layer is 50 to 500 μm. Claim 10 A method for removing contaminants formed on the surface of an yttria-based coating layer according to claim 1, wherein the thickness of the secondary coating layer comprises 90 to 100% of the thickness of the primary coating layer.

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