Gate drive and junction temperature measurement apparatus for semiconductor device

Abstract

The present disclosure relates to a gate drive and a junction temperature measuring device for a semiconductor device, and more specifically, to a gate drive having a drain-source voltage control function for a semiconductor device, comprising: a drain-source voltage circuit module that outputs a gate voltage compensation value (△Vg) for a gate voltage (Vg) of a semiconductor device such that the drain-source voltage (Vds) of the semiconductor device becomes a predetermined drain-source voltage command value (Vds*); a gate voltage feedback circuit module that provides a gate voltage (Vg); and a gate voltage generation circuit module that applies a compensated gate voltage to a gate by adding the fed-back gate voltage and the gate voltage compensation value (△Vg).

Description

Technology Field

[0001] The present disclosure relates to a gate drive and a junction temperature measuring device for a semiconductor device, and more specifically, to a gate drive capable of applying a gate voltage such that the drain-source terminal voltage of the semiconductor device is maintained constant when measuring the junction temperature, and a junction temperature measuring device capable of measuring the junction temperature of the semiconductor device with high accuracy using the gate drive. Background Technology

[0003] Due to the continuous growth of the electric vehicle sector, the demand for high-performance and high-efficiency semiconductor devices is also increasing. In particular, since semiconductor devices used in power conversion circuits operate under extreme conditions such as high voltage and high current environments, research and development on technologies to verify the reliability of these devices are active.

[0004] It is common practice to conduct destructive tests, such as power cycle tests, to determine the environment in which semiconductor devices can perform optimally. As a method for evaluating thermal reliability within the operating environment of semiconductor devices, there exists a method of testing reliability by heating the device. In other words, this method verifies reliability by heating the semiconductor device to a limit temperature under specified operating conditions and testing whether it operates normally. In this context, accurately determining the junction temperature is essential to identifying the limit temperature.

[0005] Junction temperature refers to the point within a semiconductor device that has the highest temperature, and this point may be the same as the device's active region. As such, junction temperature is a variable that significantly affects the performance and reliability of semiconductor devices; if the junction temperature exceeds a critical threshold, the device's lifespan is drastically shortened, potentially leading to device failure. Therefore, accurately measuring the junction temperature of semiconductor devices is crucial.

[0006] However, since semiconductor devices are packaged, it is impossible to directly measure the junction temperature. Therefore, conventional methods include embedding a temperature sensor within the package or indirectly measuring the junction temperature using the thermal resistance value from a point on the semiconductor device to the outside of the package. However, for semiconductor devices that do not have a built-in temperature sensor, the junction temperature can only be measured indirectly, and there is a problem in that it is very difficult to accurately measure the junction temperature because the thermal resistance value varies depending on the location outside the package.

[0007] In addition, when heating power is applied to heat a semiconductor device, the voltage between the drain and source increases as the temperature of the semiconductor device rises. That is, even when a heating current (Iheat) is applied to the semiconductor device, additional power is generated to produce heat as the voltage between the drain and source (Vds) increases.

[0008] Therefore, if this phenomenon persists, power may be supplied non-linearly to the semiconductor device, resulting in higher power being applied than intended by the experimenter. This leads to additional heat generation in the semiconductor device, which in turn lowers the accuracy and reliability of the reliability test itself. Consequently, there is a need for measures to maintain a constant voltage between the drain and source even while heating the semiconductor device. Prior art literature

[0010] Published Patent Application No. 10-2018-0069954 (June 26, 2018) The problem to be solved

[0011] The present disclosure is devised to solve the problems described above, and the purpose of the gate drive and semiconductor device junction temperature measuring device according to the present disclosure is to provide a gate drive and semiconductor device junction temperature measuring device that can significantly improve the accuracy of the junction temperature and the stability of the experiment by maintaining the drain-source voltage constant when applying heating power to the semiconductor device for reliability testing, thereby preventing additional heat from being generated during reliability testing. means of solving the problem

[0013] In order to solve the problems described above, a gate drive according to one embodiment of the present disclosure is a gate drive having a drain-source voltage control function of a semiconductor device, and includes a drain-source voltage circuit module that outputs a gate voltage compensation value (△Vg) for a gate voltage (Vg) of a semiconductor device such that the drain-source voltage (Vds) of the semiconductor device becomes a predetermined drain-source voltage command value (Vds*), a gate voltage feedback circuit module that provides a gate voltage (Vg), and a gate voltage generation circuit module that applies a compensated gate voltage to a gate by adding the fed-back gate voltage and the gate voltage compensation value (△Vg).

[0014] Additionally, the drain-source voltage circuit module includes a first-1 resistor, one end of which is connected to the drain of a semiconductor device; a first-2 resistor, which receives a drain-source voltage command value (Vds*) through one end; a first operational amplifier, the non-inverting terminal of which is connected to the other end of the first-1 resistor and the inverting terminal of which is connected to the other end of the first-2 resistor; and a first-3 resistor, which is connected between the inverting terminal of the first operational amplifier and the output terminal of the first operational amplifier.

[0015] Additionally, the gate voltage generation circuit module includes a 2-1 resistor, one end of which is connected to the output terminal of a first operational amplifier; a 2-2 resistor, one end of which is connected to a predetermined ground; a second operational amplifier, the non-inverting terminal of which is connected to the other end of the 2-1 resistor and the inverting terminal of which is connected to the other end of the 2-2 resistor; a 2-3 resistor, one end of which is connected to the inverting terminal of the second operational amplifier and the other end of which is connected to the output terminal of the second operational amplifier; and a 2-4 resistor, one end of which is connected to the output terminal of the second operational amplifier and the other end of which is connected to the gate of a semiconductor device.

[0016] In addition, the gate voltage feedback circuit module includes a buffer whose input terminal is connected to the gate of a semiconductor device, and a third resistor whose one end is connected to the output terminal of the buffer and whose other end is connected to the non-inverting terminal of a second operational amplifier.

[0017] A junction temperature measuring device for a semiconductor device according to one embodiment of the present disclosure comprises a gate drive of claim 1, a temperature variable device for varying the external temperature of the semiconductor device, a current source for applying a predetermined measuring current to the drain of the semiconductor device, and a controller that controls at least one of the temperature variable device and the current source and receives the gate voltage of the semiconductor device, wherein the controller calculates the junction temperature of the semiconductor device based on the amount of change in the gate voltage (△Vg / △T) according to the external temperature of the semiconductor device.

[0018] In addition, the controller calculates △Vg / △T according to the following Equation 1,

[0019] [Equation 1] △Vg / △T = (Vgc - Vg0) / (Tc-T0)

[0020] Here, Tc is the final control temperature of the temperature variable device, T0 is the initial control temperature of the temperature variable device, Vgc is the gate voltage at Tc, and Vg0 is the gate voltage at T0.

[0021] In addition, the invention further includes a heating power supply that supplies a predetermined heating power to a semiconductor device, and the controller controls the heating power supply, and the controller calculates the junction temperature of the semiconductor device based on the gate voltage at the time when the supply of heating power ends and △Vg / △T.

[0022] In addition, the controller calculates the junction temperature according to the following Equation 2,

[0023] [Equation 2]

[0024] Here, Tj is the junction temperature, Vg1 is the gate voltage at the time when the supply of heating power is terminated, T0 is the initial control temperature of the temperature variable device, Vg0 is the gate voltage at T0, and △Vg / △T is the amount of change in gate voltage according to the external temperature of the semiconductor device.

[0025] In addition, the drain-source voltage command value satisfies the condition of Equation 3 below, wherein

[0026] [Equation 3] Vds*<Vs

[0027] Here, Vds* is the drain-source voltage command value, and Vs is the voltage applied to the current source to generate the measured current. Effects of the invention

[0029] According to the gate drive and junction temperature measuring device of the semiconductor device according to the present disclosure as described above, when heating power is applied to the semiconductor device, the gate voltage is applied so that the drain-source voltage is maintained constant, thereby preventing excessive heating during reliability testing of the semiconductor device in advance, and thereby not only is more accurate junction temperature measurement possible, but there is also an effect of improving stability during reliability testing.

[0030] Furthermore, by preventing the generation of excessive heat in semiconductor devices during reliability testing, unnecessary thermal stress on the devices can be avoided. Additionally, the possibility of thermal damage and premature device failure caused by excessive temperature rise can be minimized. Consequently, this results in improved long-term reliability and lifespan of the semiconductor devices. Brief explanation of the drawing

[0032] FIG. 1 is a circuit diagram of one embodiment of a gate drive of the present disclosure. FIG. 2 is a schematic diagram of one embodiment of a junction temperature measuring device of the present disclosure. Figure 3 is a graph of the gate voltage according to the external temperature of a semiconductor device. FIG. 4 is a schematic diagram of another embodiment of the junction temperature measuring device of the present disclosure. Specific details for implementing the invention

[0033] The purpose, features, and advantages of the foregoing disclosure will become more apparent through the following embodiments in conjunction with the accompanying drawings. The following specific structural or functional descriptions are merely illustrative for the purpose of explaining embodiments according to the concept of the present disclosure, and embodiments according to the concept of the present disclosure may be implemented in various forms and should not be interpreted as being limited to the embodiments described in this specification or application. Since embodiments according to the concept of the present disclosure may be subject to various modifications and may take various forms, specific embodiments are illustrated in the drawings and described in detail in this specification or application. However, this is not intended to limit embodiments according to the concept of the present disclosure to specific disclosed forms, and should be understood to include all modifications, equivalents, and substitutions that fall within the spirit and scope of the present disclosure. Terms such as first and / or third may be used to describe various components, but components are not limited to these terms. Terms may be used solely for the purpose of distinguishing one component from other components, for example, without departing from the scope of rights according to the concept of the present disclosure, such that the first component may be named the third component, and similarly, the third component may be named the first component. Where it is stated that a component is connected to or coupled with another component, it should be understood that it may be directly connected to or coupled with that other component, or that there may be other components in between. On the other hand, where it is stated that a component is directly connected to or directly coupled with another component, it should be understood that there are no other components in between. Other expressions used to describe the relationship between components, such as between, immediately between, adjacent to, and directly adjacent to, should be interpreted in the same way.The terms used in this specification are used merely to describe specific embodiments and are not intended to limit the disclosure. Singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "include" or "have" in this specification are intended to specify the existence of the described features, numbers, steps, actions, components, parts, or combinations thereof, and should not be understood as precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which this disclosure pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this specification. Hereinafter, the disclosure will be described in detail by describing preferred embodiments of the disclosure with reference to the accompanying drawings. Identical reference numerals in each drawing indicate identical components.

[0034] A preferred embodiment of the gate drive (100) and junction temperature measuring device (1) according to the present disclosure will be described in detail below with reference to the attached drawings.

[0035] A semiconductor device (A) may include gate, drain, and source terminals, respectively. In FIGS. 1 and FIGS. 2, they are labeled G, D, and S, respectively. Additionally, the semiconductor device (A) may be one of a Field-Effect Transistor (FET), an Insulated Gate Bipolar Transistor (IGBT), and a Bipolar Junction Transistor (BJT). If the semiconductor device (A) is an IGBT, the drain in this specification may refer to a collector (C) and the source may refer to an emitter (E).

[0036] The non-inverting terminal of the operational amplifier is shown as “+” in the drawing, and the inverting terminal is shown as “-”.

[0037] [Gate Drive (100)]

[0038] FIG. 1 is a circuit diagram of one embodiment of a gate drive (100) of the present disclosure.

[0039] The gate drive (100) has the function of controlling the drain-source voltage by adjusting the gate voltage of the semiconductor device (A). Specifically, the gate drive (100) applies a voltage to the gate of the semiconductor device (A) to control the drain-source voltage (Vds), which is the voltage between the drain and the source, to a constant level. Through this, the drain-source voltage can be limited to a constant level, and the generation of additional heating power due to an increase in the drain-source voltage can be prevented.

[0040] The gate drive (100) of the present disclosure includes a drain-source voltage circuit module (110), a gate voltage generation circuit module (120), and a gate voltage feedback circuit module (130).

[0041] The drain-source voltage circuit module (110) outputs a gate voltage compensation value (△Vg) for the gate voltage (Vg) of the semiconductor device (A) such that the drain-source voltage (Vds) of the semiconductor device (A) becomes a predetermined drain-source voltage command value (Vds*). Specifically, referring to FIG. 1, the drain-source voltage circuit module (110) calculates the difference between the drain-source voltage (Vds) and the drain-source voltage command value (Vds*), and based on this, outputs a gate voltage compensation value (△Vg) for the gate voltage (Vg) of the semiconductor device (A).

[0042] To this end, the drain-source voltage circuit module (110) includes a first operational amplifier (OP1), a first-1 resistor (R1-1), a first-2 resistor (R1-2), and a first-3 resistor (R1-3). Specifically, referring to FIG. 1, the first operational amplifier (OP1) has a non-inverting terminal connected to the other end of the first-1 resistor (R1-1) and an inverting terminal connected to the other end of the first-2 resistor (R1-2). Additionally, one end of the first-1 resistor (R1-1) is connected to the drain of a semiconductor device (A). Additionally, the first-2 resistor (R1-2) receives a drain-source voltage command value (Vds*) through one end. Additionally, the first-3 resistor (R1-3) is connected between the inverting terminal of the first operational amplifier (OP1) and the output terminal of the first operational amplifier (OP1). That is, the drain-source voltage circuit module (110) can operate as a subtractor circuit using an operational amplifier.

[0043] The gate voltage generation circuit module (120) adds the feedback gate voltage and the gate voltage compensation value (△Vg) and applies the compensated gate voltage to the gate. Specifically, referring to FIG. 1, the gate voltage generation circuit module (120) adds the gate voltage (Vg) output from the gate voltage feedback circuit module (130) and the gate voltage compensation value (△Vg) output from the drain-source voltage circuit module (110). The gate voltage generation circuit module (120) outputs the compensated gate voltage (Vg) to the gate of the semiconductor device (A) based on the signal in which the gate voltage (Vg) and the gate voltage compensation value (△Vg) are added.

[0044] The gate voltage generation circuit module (120) includes a second operational amplifier (OP2), a second-1 resistor (R2-1), a second-2 resistor (R2-2), a second-3 resistor (R2-3), and a second-4 resistor (R2-4). Specifically, referring to FIG. 1, one end of the second-1 resistor (R2-1) is connected to the output terminal of the first operational amplifier (OP1). One end of the second-2 resistor (R2-2) is connected to a predetermined ground. The second operational amplifier (OP2) has a non-inverting terminal connected to the other end of the second-1 resistor (R2-1) and an inverting terminal connected to the other end of the second-2 resistor (R2-2). One end of the second-3 resistor (R2-3) is connected to the inverting terminal of the second operational amplifier (OP2) and the other end is connected to the output terminal of the second operational amplifier (OP1). One end of the second-fourth resistor (R2-4) is connected to the output terminal of the second operational amplifier (OP1), and the other end is connected to the gate of the semiconductor device (A). That is, the gate voltage generation circuit module (120) can operate as an adder.

[0045] Accordingly, the semiconductor device (A) is not conductive, but a gate voltage (Vg) can be applied to make the drain-source voltage (Vds) become the drain-source voltage command value (Vds*). Through this, the gate voltage generation circuit module (120) can output a gate voltage such that the drain-source voltage command value and the drain-source voltage match.

[0046] The gate voltage feedback circuit module (130) provides a gate voltage (Vg). Specifically, referring to FIG. 1, the gate voltage feedback circuit module (130) receives the gate voltage (Vg) as input and feeds the gate voltage (Vg) to the non-inverting terminal side of the second operational amplifier (OP2) of the gate voltage generation circuit module (120).

[0047] The gate voltage feedback circuit module (130) includes a buffer and a third resistor (R3). Specifically, referring to FIG. 1, the buffer can be implemented through an operational amplifier. Specifically, the buffer includes a third operational amplifier (OP3). A gate voltage (Vg) is input to the non-inverting terminal of the third operational amplifier (OP3), and the inverting terminal and the output terminal of the third operational amplifier (OP3) can be connected to each other. The output terminal of the third operational amplifier (OP3) is the output terminal of the buffer, and one end of the third resistor (R3) can be connected thereto. That is, one end of the third resistor (R3) is connected to the output terminal of the buffer, and the other end is connected to the non-inverting terminal of the second operational amplifier (OP2). In other words, the gate voltage feedback circuit module (130) can operate as both a feedback circuit and a buffer.

[0048] That is, through the gate voltage feedback circuit module (130), the noise included in the gate voltage generated by the gate voltage generation circuit module (120) can be reduced, and the gate voltage can be generated stably.

[0049] [Junction temperature measuring device (1)]

[0050] FIG. 2 is a schematic diagram of one embodiment of the junction temperature measuring device (1) of the present disclosure.

[0051] A junction temperature measuring device (1) of a semiconductor device (A) according to the present disclosure comprises a gate drive (100), a temperature variable device (200), a current source (300), a controller (400), a drain-source voltage command value generator (500), and a heating power supply (600).

[0052] The gate drive (100) is the gate drive (100) of the present disclosure described above. Specifically, the gate drive (100) described above is included in the junction temperature measuring device (1) of the present disclosure. The gate drive (100) can be connected to the gate, drain, and drain-source voltage command value generator (500) of the semiconductor device (A), respectively.

[0053] The temperature variable device (200) varies the external temperature of the semiconductor device (A). Specifically, referring to FIG. 2, the temperature variable device (200) may be provided on one side of the semiconductor device (A). For example, if the semiconductor device (A) is packaged, the temperature variable device (200) may be provided on one side of the package. For example, the temperature variable device (200) may be a heater that raises the temperature of the semiconductor device (A). Also, for example, the temperature variable device (200) may be a cooling plate that lowers the temperature of the semiconductor device (A).

[0054] The current source (300) applies a predetermined measurement current (Is) to the drain of the semiconductor device (A). Here, the predetermined measurement current (Is) is sufficient if it is a current value such that the semiconductor device (A) is not heated. The current source (300) may receive a predetermined voltage (Vs) from the outside to generate the measurement current (Is).

[0055] The controller (400) controls at least one of the temperature variable device (200) and the current source (300) and receives the gate voltage (Vg) of the semiconductor device (A). Specifically, referring to FIGS. 1 and 2, the controller (400) can control the temperature variable device (200) to raise or lower the temperature of the semiconductor device (A). Additionally, the controller (400) can control the current source (300) to cause a predetermined measurement current (Is) to flow through the drain of the semiconductor device (A).

[0056] The controller (400) can measure the junction temperature of the semiconductor device (A) by receiving the gate voltage (Vg) of the semiconductor device (A) in real time. To this end, the controller (400) may include a voltage sensor for measuring the gate voltage (Vg).

[0057] The drain-source voltage command generator (500) provides a drain-source voltage command value (Vds*) to the gate drive (100). The drain-source voltage command generator (500) is a predetermined voltage source, and the voltage value of the predetermined voltage source is a value that is pre-set or a value that can be varied by the user.

[0058] In addition, the drain-source voltage command value (Vds*) satisfies the condition of Equation 3 below.

[0059] [Equation 3] Vds*<Vs

[0060] Here, Vds* is the drain-source voltage command value, and Vs is the voltage applied to the current source (300) to generate the measurement current.

[0061] By doing so, the command value (Vds*) of the drain-source voltage can be set lower than the voltage applied to the current source (300), thereby improving stability and reliability in the junction temperature measurement process.

[0062] The heating power supply (600) supplies a predetermined heating power to the semiconductor device (A). Specifically, the heating power supply (600) can heat the semiconductor device (A) by receiving control from the controller (400) and applying a predetermined heating current to both ends of the drain and source of the semiconductor device (A) for a predetermined application time. As an example, the heating power supply (600) is a predetermined power supply device including a positive electrode and a negative electrode, and the positive electrode of the power supply device is connected to the drain of the semiconductor device (A) and the negative electrode of the power supply device is connected to the source of the semiconductor device (A), respectively, and the predetermined power can apply a predetermined heating current for a predetermined application time. In addition, as an example, the heating power supply (600) may be a current source capable of varying the applied current. The predetermined heating current and the application time are values ​​that can be varied by the user by controlling the controller (400).

[0063] This is intended to test the reliability of the semiconductor device (A) by simulating the actual usage conditions of the semiconductor device (A), and a voltage (Vds) between the drain and source of the semiconductor device (A) is applied while a predetermined heating current (Iheat) flows. In this case, the heating power Pheat supplied to the semiconductor device (A) through the heating power supply (600) can be calculated as Vds·Iheat.

[0064] Next, a method for the controller (400) to calculate the junction temperature of the semiconductor device (A) is explained. The controller (400) calculates the junction temperature of the semiconductor device (A) based on the change in gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A).

[0065] Before calculating the change amount (△Vg / △T) of the gate voltage according to the external temperature of the semiconductor device (A), the controller (400) can control the current source (300) so that a predetermined measurement current (Is) is applied to the drain, and can control the heating power supply (600) so that heating power is not applied to both the drain and source terminals. Through this, appropriate voltage and current can be applied to the drain and source according to each situation.

[0066] Figure 3 is a graph of the gate voltage according to the external temperature of the semiconductor device (A).

[0067] Referring to FIG. 3, the controller (400) can calculate a graph (TSEP) of the gate voltage according to the external temperature of the semiconductor device (A). Additionally, the controller (400) can calculate the amount of change in the gate voltage according to the external temperature of the semiconductor device (A) (△Vg / △T) from the graph (TSEP) of the gate voltage according to the external temperature of the semiconductor device (A). Specifically, the controller (400) calculates the amount of change in the gate voltage according to the external temperature of the semiconductor device (A) (△Vg / △T) according to the following Equation 1.

[0068] [Equation 1] △Vg / △T = (Vgc - Vg0) / (Tc-T0)

[0069] Here, Tc is the final control temperature of the temperature variable device (200), T0 is the initial control temperature of the temperature variable device (200), Vgc is the gate voltage at Tc, and Vg0 is the gate voltage at T0.

[0070] When the controller (400) calculates the amount of change in gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A), the junction temperature can be calculated based on the amount of change in gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A). To this end, the controller (400) can control the temperature variable device (200) so that it does not operate, and the controller (400) can control the current source (200) so that a predetermined measurement current is not applied to the drain. Through this, the junction temperature can be measured by providing conditions different from the conditions for calculating the amount of change in gate voltage (△Vg / △T) according to the external temperature.

[0071] The controller (400) can control the heating power supply (600). That is, the controller (400) can control the heating power supply (600) so that a predetermined heating power is supplied to the semiconductor device (A). Specifically, the controller (400) can control the heating power supply (600) so that a predetermined current flows through the drain and source of the semiconductor device (A).

[0072] The controller (400) calculates the junction temperature of the semiconductor device (A) based on the gate voltage (Vg1) at the time when the supply of heating power is terminated and the amount of change in the gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A). Specifically, the controller (400) calculates the junction temperature according to the following Equation 2.

[0073] [Equation 2]

[0074] Here, Tj is the junction temperature, Vg1 is the gate voltage at the time when the supply of heating power is terminated, T0 is the initial control temperature of the temperature variable device (200), Vg0 is the gate voltage at T0, and △Vg / △T is the amount of change in gate voltage according to the external temperature of the semiconductor device (A).

[0075] In conclusion, the gate voltage is controlled so that the drain-source voltage follows the drain-source voltage command value, and the amount of change in the gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A) is calculated using a temperature variable device (200), and the junction temperature of the semiconductor device (A) can be calculated with high accuracy based on the amount of change in the gate voltage (△Vg / △T) according to the external temperature of the semiconductor device (A).

[0076] FIG. 4 is a schematic diagram of another embodiment of the junction temperature measuring device (1) of the present disclosure.

[0077] The semiconductor device (A) illustrated in FIG. 4 may be a semiconductor device (A) mounted on a power conversion device. For example, the power conversion device may be an inverter or a converter.

[0078] Referring to FIG. 4, another embodiment of the junction temperature measuring device (1) of the present disclosure includes at least one switch between a current source (300) and a semiconductor device (A). As an example, the switch may be a relay.

[0079] The controller (400) can control the switch to ON when the power conversion device is not operating. Specifically, the junction temperature of the semiconductor device (A) can be measured when the semiconductor device (A) is not performing power conversion operations. Therefore, when the power conversion device is not operating and voltage or current is not applied to the semiconductor device (A), the controller (400) can control the switch to ON to form an electrical path between the current source (300) and the semiconductor device (A). When the switch is controlled to ON, the controller (400) can measure the junction temperature of the semiconductor device (A). Conversely, the controller (400) can control the switch to OFF when the power conversion device is operating. Therefore, the controller (400) does not measure the junction temperature of the semiconductor device (A) when the power conversion device is operating.

[0080] According to the gate drive (100) and junction temperature measuring device (1) of the present disclosure as described above, when heating power is applied to a semiconductor device (A), the gate voltage is applied so that the drain-source voltage is maintained constant, thereby preventing excessive heating during reliability testing of the semiconductor device (A), and thereby not only is more accurate junction temperature measurement possible, but there is also an effect of improving stability during reliability testing.

[0081] In addition, unnecessary thermal stress on the semiconductor device (A) can be prevented by preventing the generation of excessive heat during reliability testing. Furthermore, the possibility of thermal damage and premature failure of the device due to excessive temperature rise can be minimized. As a result, the long-term reliability and lifespan of the semiconductor device (A) are further improved.

[0082] The technical concept of this disclosure should not be interpreted as being limited to the embodiments described above. Not only is the scope of application diverse, but various modifications are possible at the level of a person skilled in the art without departing from the essence of this disclosure as claimed in the claims. Accordingly, such improvements and modifications fall within the scope of protection of this disclosure insofar as they are obvious to a person skilled in the art. Explanation of the symbols

[0084] 1: Junction temperature measuring device 100 : Gate Drive 110: Drain-Source Voltage Circuit Module 120: Gate voltage generation circuit module 130: Gate voltage feedback circuit module 200: Variable temperature device 300 : Current source 400 : Controller 500 : Drain-source voltage command value generator 600 : Heating power supply A : Semiconductor device

Claims

Claim 1 A gate drive having a drain-source voltage control function of a semiconductor device, comprising: a drain-source voltage circuit module that outputs a gate voltage compensation value (△Vg) for a gate voltage (Vg) of a semiconductor device such that the drain-source voltage (Vds) of the semiconductor device becomes a predetermined drain-source voltage command value (Vds*); a gate voltage generation circuit module that applies a compensated gate voltage to the gate by adding the gate voltage and the gate voltage compensation value (△Vg); and a gate voltage feedback circuit module that provides the gate voltage to the gate voltage generation circuit module based on the compensated gate voltage; wherein the drain-source voltage circuit module comprises: a first-1 resistor having one end connected to the drain of the semiconductor device; a first-2 resistor receiving the drain-source voltage command value (Vds*) through one end; and a first operational amplifier having a non-inverting terminal connected to the other end of the first-1 resistor and an inverting terminal connected to the other end of the first-2 resistor. A gate drive comprising a first-to-third resistor connected between the inverting terminal of the first operational amplifier and the output terminal of the first operational amplifier. Claim 2 delete Claim 3 In claim 1, the gate voltage generation circuit module comprises: a second-1 resistor, one end of which is connected to the output terminal of the first operational amplifier; a second-2 resistor, one end of which is connected to a predetermined ground; a second operational amplifier, the non-inverting terminal of which is connected to the other end of the second-1 resistor and the inverting terminal of which is connected to the other end of the second-2 resistor; a second-3 resistor, one end of which is connected to the inverting terminal of the second operational amplifier and the other end of which is connected to the output terminal of the second operational amplifier; and a second-4 resistor, one end of which is connected to the output terminal of the second operational amplifier and the other end of which is connected to the gate of the semiconductor device; a gate drive. Claim 4 In paragraph 3, the gate voltage feedback circuit module comprises: a buffer having an input terminal connected to the gate of the semiconductor device; and a third resistor having one end connected to the output terminal of the buffer and the other end connected to the non-inverting terminal of the second operational amplifier; a gate drive. Claim 5 A junction temperature measuring device for a semiconductor device, comprising: a gate drive of claim 1; a temperature variable device for varying the external temperature of a semiconductor device; a current source for applying a predetermined measuring current to the drain of the semiconductor device; and a controller for controlling at least one of the temperature variable device and the current source and receiving the gate voltage of the semiconductor device, wherein the controller calculates the junction temperature of the semiconductor device based on the amount of change in the gate voltage (△Vg / △T) according to the external temperature of the semiconductor device. Claim 6 In claim 5, the controller calculates △Vg / △T according to the following Equation 1, [Equation 1] △Vg / △T = (Vgc - Vg0) / (Tc-T0) where Tc is the final control temperature of the temperature variable device, T0 is the initial control temperature of the temperature variable device, Vgc is the gate voltage at Tc, and Vg0 is the gate voltage at T0, a junction temperature measuring device. Claim 7 A junction temperature measuring device for a semiconductor device according to claim 5, further comprising a heating power supply that supplies a predetermined heating power to the semiconductor device; wherein a controller controls the heating power supply, and the controller calculates the junction temperature of the semiconductor device based on the gate voltage at the time when the supply of the heating power ends and the △Vg / △T. Claim 8 In claim 7, the controller calculates the junction temperature according to the following Formula 2, [Formula 2] A junction temperature measuring device for a semiconductor device, wherein Tj is the junction temperature, Vg1 is the gate voltage at the time when the supply of the heating power is terminated, T0 is the initial control temperature of the temperature variable device, Vg0 is the gate voltage at T0, and △Vg / △T is the amount of change in gate voltage according to the external temperature of the semiconductor device. Claim 9 A junction temperature measuring device for a semiconductor device, wherein, in claim 5, the drain-source voltage command value satisfies the condition of the following Equation 3, [Equation 3] Vds* < Vs, where Vds* is the drain-source voltage command value and Vs is the voltage applied to the current source to generate the measurement current.

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