Active gas generating device

Abstract

The present disclosure aims to provide an active gas generating device having a structure that prevents dielectric breakdown of a dielectric film. In the electrode unit (51) of the active gas generating device (71) of the present disclosure, the dielectric film support member (10) has a support surface (10F) that supports the high-voltage dielectric film (2) from below. The lower surface of the dielectric film suppression member (11) provided above the ground-side dielectric film (3) has a dielectric contact area (112) that overlaps with the peripheral area of ​​the high-voltage dielectric film (2) and the support surface (10F) of the dielectric film support member (10) when viewed in a planar view, and a dielectric non-contact area (111) that overlaps with the intermediate area of ​​the high-voltage dielectric film (2) when viewed in a planar view. The high-voltage dielectric film (2) is suppressed from the upper dielectric contact area (112) by the dielectric film suppression member (11) which receives the compressive force of a plurality of suppression auxiliary members (32).

Description

Technology Field

[0001] The present disclosure relates to an active gas generating device having a parallel plate type electrode structure and generating an active gas using a dielectric barrier discharge. Background Technology

[0002] In a conventional active gas generating device having a parallel plate electrode structure and employing dielectric barrier discharge, the gap between opposing metal electrodes (conductive film for electrodes) and dielectric films (dielectric film for electrodes), or the gap between opposing dielectric films, becomes the discharge space.

[0003] Conventional active gas generating devices employ a parallel plate type dielectric barrier discharge, which generates an active gas by activating a raw gas introduced into the discharge space by generating a dielectric barrier discharge in the discharge space.

[0004] There is an active gas generating device that employs a parallel plate type dielectric barrier discharge, for example, the active gas generating device disclosed in Patent Document 1.

[0005] Generally, active gases have a short lifespan (the time during which they maintain high reactivity) and need to be supplied to the space where they are used within a short period. Furthermore, since active gases are deactivated even by collisions with other materials, it is undesirable to supply them to the space through curved pipes or similar means.

[0006] For this reason, in a space where active gas is used, if the object to be treated (the object emitting active gas) is large, it is necessary to provide a first improved structure that provides a gas ejection hole for supplying active gas to the space where active gas is used, or a second improved structure in which multiple discharge spaces corresponding to each of the multiple gas ejection holes exist. Prior art literature

[0007] International Publication No. 2019 / 138456 The problem to be solved

[0008] Regarding the first improved structure described above, a method of providing multiple through holes in a single dielectric film is employed. Consequently, in the first improved structure, there was a problem in that it was necessary to enlarge the dielectric film to match the object to be processed, and the device configuration became large.

[0009] In addition, the first improved structure had a problem in that it lacked a mechanism to remove heat generated by the discharge, and the dielectric film was damaged by the heat generated by the discharge.

[0010] In the aforementioned second improved structure, there was a problem in that the device configuration became large because it was necessary to provide multiple discharge spaces.

[0011] In addition, in the active gas generating device disclosed in Patent Document 1, when a differential pressure is applied to the dielectric film, it becomes necessary to take countermeasures such as thickening the dielectric film, and thickening the dielectric film increases the required applied voltage. If the applied voltage increases, there was a problem in that measures such as insulation breakdown countermeasures for unnecessary parts or enlargement of the introduction terminals to cope with high voltage became necessary.

[0012] Furthermore, in the conventional active gas generating device disclosed in Patent Document 1, there was a problem that the cooling efficiency of the dielectric film was poor because it was cooled by purge gas. This is because the heat removal rate of the conventional active gas generating device is low due to air cooling.

[0013] The present disclosure aims to provide an active gas generating device having a structure that solves the above-mentioned problems and prevents at least dielectric breakdown of a dielectric film. means of solving the problem

[0014] The active gas generating device according to the present disclosure is an active gas generating device that generates active gas by activating a raw gas supplied to a discharge space, and comprises an electrode unit and a housing having a conductive capacity that accommodates the electrode unit in a space within the housing, wherein the housing has a bottom portion comprising a flat surface and a conductor receiving space that is concave in the depth direction from the flat surface, and the electrode unit comprises a first electrode component, a second electrode component provided below the first electrode component, and a reference potential conductor provided below the second electrode component and accommodated within the conductor receiving space, wherein the first electrode component comprises a dielectric film for the first electrode and a conductive film for the first electrode formed on the upper surface of the dielectric film for the first electrode, and the second electrode component comprises a dielectric film for the second electrode and a conductive film for the second electrode formed on the lower surface of the dielectric film for the second electrode, wherein the reference potential conductor has an active gas buffer space at the top, and the second electrode component is disposed to block the active gas buffer space, and the dielectric film for the second electrode In a region overlapping with the buffer space for the active gas when viewed in a planar view, a dielectric penetration hole penetrating the dielectric film for the second electrode is provided, and the conductive film for the second electrode has a conductive film opening in a region overlapping with the buffer space for the active gas when viewed in a planar view, and the conductive film opening overlaps with the dielectric penetration hole when viewed in a planar view, and the bottom of the housing has a gas flow path for receiving raw gas from the outside, and a flow space for raw gas is provided between the reference potential conductor and the conductor receiving space of the housing, so that the space where the dielectric film for the first electrode and the dielectric film for the second electrode face each other is defined as a main dielectric space, and the discharge space includes a main discharge space within the main dielectric space, which is a region where the first and second conductive films for the electrode overlap when viewed in a planar view, andA source gas is induced into the discharge space through the gas flow path and the flow space for the source gas, an alternating voltage is applied to the conductive film for the first electrode, and the conductive film for the second electrode is set to a reference potential through the housing and the reference potential conductor, and the active gas generating device further comprises a dielectric film support member having a support surface that supports the dielectric film for the first electrode from below, provided on the flat surface of the housing, and a dielectric film suppression member for suppressing the dielectric film for the first electrode from above, wherein the dielectric film suppression member does not overlap with the conductive film for the first electrode when viewed in a planar view, and the lower surface of the dielectric film suppression member has a dielectric contact region that contacts the upper surface of the dielectric film for the first electrode and a dielectric non-contact region that does not contact the upper surface of the dielectric film for the first electrode, wherein the dielectric contact region overlaps with the peripheral region of the dielectric film for the first electrode and the support surface of the dielectric film support member when viewed in a planar view, and the dielectric non-contact region overlaps with the intermediate region of the dielectric film for the first electrode and Overlapping, the intermediate region is a region adjacent to the first electrode conductive film side from the surrounding region, the dielectric film suppression member has conductivity and is set to the reference potential, and the first electrode dielectric film is suppressed from above by the dielectric film suppression member in the dielectric contact region. Effects of the invention

[0015] In the active gas generating apparatus of the present disclosure, the dielectric film for the first electrode is suppressed from above by a dielectric film suppressing member in the dielectric contact region. Accordingly, the region where a load is applied to the dielectric film for the first electrode by the dielectric film suppressing member can be limited only to the region below the dielectric contact region.

[0016] As a result, the active gas generating device of the present disclosure can fix the dielectric film for the first electrode between the dielectric contact area of ​​the dielectric film suppression member and the support surface of the dielectric film support member without imparting unnecessary bending stress to the dielectric film for the first electrode.

[0017] In addition, the dielectric non-contact region of the dielectric film suppression member, which is set to a reference potential and has conductivity, overlaps with the intermediate region of the dielectric film for the first electrode when viewed in a plane.

[0018] As a result, since the electric field strength of the conductive film for the first electrode can be relaxed to lower the intermediate potential of the dielectric film for the first electrode, the electrode unit in the active gas generating device of the present disclosure can prevent dielectric breakdown in the gap between the dielectric film for the first electrode and the dielectric film support member.

[0019] The purpose, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings. Brief explanation of the drawing

[0020] FIG. 1 is a plan view schematically illustrating the planar structure of an active gas generating device, which is Embodiment 1 of the present disclosure. FIG. 2 is a cross-sectional view illustrating the cross-sectional structure of the AA cross section of FIG. 1. FIG. 3 is an explanatory diagram (Fig. 1) schematically illustrating the planar structure of an electrode unit. Figure 4 is an explanatory diagram illustrating the cross-sectional structure of the BB cross section of Figure 3. Figure 5 is an explanatory diagram (Figure 2) schematically illustrating the planar structure of an electrode unit. Figure 6 is an explanatory diagram illustrating the cross-sectional structure of the CC cross section of Figure 5. FIG. 7 is an explanatory diagram schematically illustrating the planar structure of the housing. Figure 8 is an explanatory diagram schematically illustrating the cross-sectional structure of the housing. Figure 9 is an explanatory diagram schematically illustrating the planar structure of the high-pressure side dielectric film. Figure 10 is an explanatory diagram schematically illustrating the cross-sectional structure of a high-pressure dielectric film. FIG. 11 is an explanatory diagram schematically illustrating the planar structure of a ground-side dielectric film. FIG. 12 is an explanatory diagram schematically illustrating the cross-sectional structure of the ground-side dielectric film. FIG. 13 is an explanatory diagram schematically illustrating the planar structure of the entire class. Figure 14 is an explanatory diagram schematically illustrating the cross-sectional structure of the entire body. FIG. 15 is an explanatory diagram schematically illustrating the planar structure of a grounding conductor. Figure 16 is an explanatory diagram schematically illustrating the cross-sectional structure of a grounding conductor. FIG. 17 is an explanatory diagram illustrating details in the area of ​​interest of FIG. 16. FIG. 18 is an explanatory diagram schematically illustrating the planar structure of a cover dielectric film. FIG. 19 is an explanatory diagram schematically illustrating the cross-sectional structure of a cover dielectric film. FIG. 20 is an explanatory diagram schematically illustrating the planar structure of the ground-side electrode component. FIG. 21 is an explanatory diagram schematically illustrating the cross-sectional structure of the ground-side electrode component. FIG. 22 is an explanatory diagram schematically illustrating the planar structure of a shield dielectric film. FIG. 23 is an explanatory diagram schematically illustrating the cross-sectional structure of a shield dielectric film. FIG. 24 is an explanatory diagram schematically illustrating the planar structure of a dielectric film support member. FIG. 25 is an explanatory diagram schematically illustrating the cross-sectional structure of a dielectric film support member. FIG. 26 is an explanatory diagram schematically illustrating the planar structure of a dielectric membrane suppression member. FIG. 27 is an explanatory diagram schematically illustrating the cross-sectional structure of a dielectric membrane suppression member. FIG. 28 is an explanatory diagram illustrating details in the area of ​​interest of FIG. 27. FIG. 29 is an explanatory diagram schematically illustrating the planar structure of a compression member. FIG. 30 is an explanatory diagram schematically illustrating the cross-sectional structure of a compression member. FIG. 31 is a plan view schematically illustrating the planar structure of an active gas generating device, which is Embodiment 2 of the present disclosure. FIG. 32 is a cross-sectional view illustrating the cross-sectional structure of the DD cross section of FIG. 31. FIG. 33 is an explanatory diagram schematically illustrating the planar structure of a feeder used in an electrode unit in an active gas generating device of Embodiment 3. FIG. 34 is an explanatory diagram illustrating the cross-sectional structure in the EE cross-section of FIG. 33. FIG. 35 is an explanatory diagram schematically illustrating the refrigerant function in the basic configuration of Embodiment 3. FIG. 36 is an explanatory diagram schematically illustrating the refrigerant function in a modified example of Embodiment 3. FIG. 37 is an explanatory diagram illustrating the cross-sectional structure of an electrode unit in an active gas generating device of Embodiment 4. FIG. 38 is an explanatory diagram schematically illustrating the planar structure of the high-pressure side dielectric film illustrated in FIG. 37. FIG. 39 is an explanatory diagram schematically illustrating the cross-sectional structure of the high-pressure side dielectric film shown in FIG. 37. Specific details for implementing the invention

[0021] <Embodiment 1>

[0022] FIG. 1 is a plan view schematically illustrating the planar structure of an active gas generating device (71) which is embodiment 1 of the present disclosure.

[0023] As illustrated in the drawing, in an active gas generating device (71), three electrode units (51 to 53) are housed within a housing (1). A source gas G1 is supplied to each of the electrode units (51 to 53) through a gas flow path (21). Each of the electrode units (51 to 53) activates the source gas G1 supplied to the discharge space (4) to generate an active gas G2.

[0024] FIG. 2 is a cross-sectional view illustrating the cross-sectional structure of the AA cross section of FIG. 1. FIG. 3 to 6 are explanatory diagrams partially illustrating the structure of the electrode unit (50). Additionally, the electrode unit (50) corresponds to any of the electrode units (51 to 53). Additionally, the electrode units (51 to 53) have the same structure.

[0025] FIG. 3 is an explanatory diagram schematically illustrating the planar structure of the electrode unit (50). FIG. 4 is an explanatory diagram illustrating the cross-sectional structure of the BB cross section of FIG. 3. FIG. 3 and FIG. 4 are first explanatory diagrams illustrating the structure of the ground conductor (6) and its surroundings.

[0026] FIG. 5 is an explanatory diagram schematically illustrating the planar structure of the electrode unit (50). FIG. 6 is an explanatory diagram illustrating the cross-sectional structure of the CC cross section of FIG. 5. FIG. 5 and FIG. 6 are second explanatory diagrams illustrating the detailed structure of the ground conductor (6) and its surroundings.

[0027] FIGS. 7 to 30 are explanatory diagrams illustrating details of the components of the electrode unit (50). FIGS. 7 and 8 are explanatory diagrams schematically illustrating the structure of the housing (1). FIG. 7 illustrates the planar structure of the housing (1), and FIG. 8 illustrates the cross-sectional structure of the housing (1).

[0028] FIGS. 9 and FIGS. 10 are explanatory diagrams schematically illustrating the structure of the high-pressure side dielectric film (2), respectively. FIG. 9 illustrates the planar structure of the high-pressure side dielectric film (2), and FIG. 10 illustrates the cross-sectional structure of the high-pressure side dielectric film (2).

[0029] FIGS. 11 and FIGS. 12 are explanatory diagrams schematically illustrating the structure of the ground-side dielectric film (3). FIGS. 11 illustrates the planar structure of the ground-side dielectric film (3), and FIGS. 12 illustrates the cross-sectional structure of the ground-side dielectric film (3).

[0030] FIGS. 13 and FIGS. 14 are explanatory diagrams schematically illustrating the structure of the feed body (5). FIGS. 13 illustrates the planar structure of the feed body (5), and FIGS. 14 illustrates the cross-sectional structure of the feed body (5).

[0031] FIGS. 15 to 17 are explanatory diagrams schematically illustrating the structure of a grounding conductor (6). FIG. 15 illustrates the planar structure of the grounding conductor (6), FIG. 16 illustrates the cross-sectional structure of the grounding conductor (6), and FIG. 17 illustrates the details in the area of ​​interest R1 of FIG. 16.

[0032] FIGS. 18 and FIGS. 19 are explanatory diagrams schematically illustrating the structure of a cover dielectric film (8). FIG. 18 illustrates the planar structure of the cover dielectric film (8), and FIG. 19 illustrates the cross-sectional structure of the cover dielectric film (8).

[0033] FIGS. 20 and FIGS. 21 are explanatory diagrams schematically illustrating the structure of the ground-side electrode component E2, respectively. FIG. 20 illustrates the planar structure of the ground-side electrode component E2, and FIG. 21 illustrates the cross-sectional structure of the ground-side electrode component E2. The ground-side electrode component E2 includes a combined structure of a ground-side dielectric film (3), a conductive film (7), and a cover dielectric film (8).

[0034] FIGS. 22 and FIGS. 23 are explanatory diagrams schematically illustrating the structure of a shield dielectric film (9), respectively. FIGS. 22 illustrates the planar structure of the shield dielectric film (9), and FIGS. 23 illustrates the cross-sectional structure of the shield dielectric film (9).

[0035] FIGS. 24 and FIGS. 25 are explanatory diagrams schematically illustrating the structure of a dielectric film support member (10). FIG. 24 illustrates the planar structure of the dielectric film support member (10), and FIG. 25 illustrates the cross-sectional structure of the dielectric film support member (10).

[0036] FIGS. 26 to 28 are explanatory diagrams schematically illustrating the structure of a dielectric film suppression member (11). FIG. 26 illustrates the planar structure of the dielectric film suppression member (11), FIG. 27 illustrates the cross-sectional structure of the dielectric film suppression member (11), and FIG. 28 illustrates the details in the area of ​​interest R2 of FIG. 27.

[0037] FIGS. 29 and FIGS. 30 are explanatory diagrams schematically illustrating the structure of a compression member (12). FIG. 29 illustrates the planar structure of the compression member (12), and FIG. 30 illustrates the cross-sectional structure of the compression member (12).

[0038] Additionally, FIGS. 1 to 30 schematically illustrate an active gas generating device (71), an electrode unit (50), or a component of the electrode unit (50), respectively, and the shapes including scales do not necessarily correspond between FIGS. 1 to 30. Additionally, an XYZ orthogonal coordinate system is described in FIGS. 1 to 30.

[0039] Hereinafter, an active gas generating device (71) of Embodiment 1 will be described with appropriate reference to the aforementioned FIGS. 1 to 30.

[0040] (Overall structure)

[0041] As illustrated in FIG. 1, the active gas generating device (71) comprises electrode units (51 to 53) as a plurality of electrode units, and a housing (1) having conductivity that accommodates the electrode units (51 to 53) in a space S1 (see FIG. 8) within the housing.

[0042] As illustrated in FIGS. 2 and 7, the housing (1) has a housing bottom (1a) comprising a flat surface (1F) and a conductor receiving space (6S) that is concave in the depth direction from the flat surface (1F).

[0043] As shown in FIG. 8, the housing (1) has a housing bottom (1a), a housing side (1b), and a housing top (1c), and the housing bottom (1a), the housing side (1b), and the housing top (1c) form a housing internal space S1 that accommodates electrode units (51 to 53) inside.

[0044] Each electrode unit (51 to 53) is housed in the housing space S1 of the housing (1) in a manner in which a grounding conductor (6) is placed within the conductor receiving space (6S). As shown in FIG. 7, a raw gas G1 supplied from the outside is supplied to a raw gas distribution space provided on the lower surface and side of the grounding conductor (6) placed within the conductor receiving space (6S) through a gas flow path (21) provided within the bottom part (1a) of the housing.

[0045] The electrode unit (51)(50) is provided with a high-voltage side electrode component E1, which is a first electrode component, and a ground side electrode component E2, which is a second electrode component provided below the high-voltage side electrode component E1, which is a first electrode component.

[0046] The electrode unit (51) further comprises a grounding conductor (6), which is a reference potential conductor, provided below the grounding side electrode component E2, which is the second electrode component, and accommodated within the conductor receiving space (6S). The grounding conductor (6) is composed of a conductor such as metal.

[0047] The high-voltage side electrode component E1 includes a high-voltage side dielectric film (2), which is a dielectric film for the first electrode, and a feeder (5), which is a conductive film for the first electrode, formed on the upper surface of the high-voltage side dielectric film (2). Additionally, the feeder (5), which is a conductive film for the first electrode, is provided on a concave portion (28) for feeder placement provided in the center of the high-voltage side dielectric film (2), which is a dielectric film for the first electrode.

[0048] The high-voltage dielectric film (2) is composed of a dielectric material, and the feeder (5) is composed of a conductor such as a metal. For example, the feeder (5) is made of metal.

[0049] The ground side electrode component E2 includes a ground side dielectric film (3), which is a dielectric film for the second electrode, and a conductive film (7), which is a conductive film for the second electrode, formed on the lower surface of the ground side dielectric film (3). Additionally, since the thickness of the conductive film (7) is thin, it is omitted from illustration in FIG. 2, etc., and the formation area of ​​the conductive film (7) is illustrated in FIG. 20 and FIG. 21.

[0050] The grounding dielectric film (3) is composed of a dielectric material, and the conductive film (7) is composed of a conductor such as a metal.

[0051] The grounding conductor (6), which is a reference potential conductor, has a non-penetrating buffer space (68) for active gas at the top, and the grounding side electrode component E2 is positioned to block the buffer space (68) for active gas. Accordingly, outside the buffer space (68) for active gas, the lower surface of the conductive film (7) and the upper surface of the grounding conductor (6) are in contact.

[0052] The ground-side dielectric film (3), which is the dielectric film for the second electrode, has a dielectric penetration hole (3h) penetrating the ground-side dielectric film (3) in an area that overlaps with the buffer space (68) for the active gas when viewed in a planar view, and the conductive film (7), which is the conductive film for the second electrode, has a conductive film opening (7h) in an area that overlaps with the buffer space (68) for the active gas when viewed in a planar view, and the conductive film opening (7h) overlaps with the dielectric penetration hole (3h) when viewed in a planar view.

[0053] The housing bottom (1a) of the housing (1) has a gas flow path (21) for receiving raw gas G1 from the outside, and a flow space for raw gas is provided between the grounding conductor (6) and the conductor receiving space (6S) of the housing (1). As described later, the flow space for raw gas includes a raw gas buffer space (61), a slit space (62), and a side space (63).

[0054] The source gas G1 is guided into the main discharge space of the discharge space (4) through the gas flow path (21) and the distribution space for the source gas. Additionally, the main discharge space refers to the discharge space (4) within the dielectric space (18) between the high-pressure side dielectric film (2) and the ground side dielectric film (3), as described below.

[0055] The alternating current voltage applied from the alternating current power source (15) is applied to the feeder (5), which is a conductive film for the first electrode, through electrical connection means such as electrical wiring or an introduction terminal. Also, the illustration showing the electrical connection means is omitted in FIG. 2, etc.

[0056] Meanwhile, the housing (1) is set to a reference potential, which is a ground potential. Accordingly, the conductive film (7), which is a conductive film for the second electrode, is set to a ground potential through the housing (1) and the ground conductor (6).

[0057] The electrode unit (51)(50) also has auxiliary members such as a dielectric film support member (10), a dielectric film suppression member (11) and a pressure member (12).

[0058] (Fixing of the high-pressure side dielectric film (2))

[0059] The stepped portion (102) of the dielectric film support member (10) is provided on the flat surface (1F) of the housing (1) and has an upper surface that becomes a support surface (10F) that supports the high-pressure dielectric film (2) from below. At this time, the dielectric film support member (10) is positioned on the flat surface (1F) such that the side of the dielectric film support member (10) and the side of the conductor receiving space (6S) of the housing bottom (1a) of the housing (1) coincide.

[0060] The dielectric film suppression member (11) is a member for suppressing the high-pressure side dielectric film (2) from above, and does not overlap with the feeder (5) when viewed in a planar view. That is, on the upper surface of the high-pressure side dielectric film (2), there exists an exposed area EX2 where the dielectric film suppression member (11) and the feeder (5) are not formed.

[0061] As illustrated in FIGS. 6, 27, and 28, the lower surface of the dielectric film suppression member (11) has a dielectric contact area (112) that contacts the upper surface of the high-pressure dielectric film (2) and a dielectric non-contact area (111) that does not contact the upper surface of the high-pressure dielectric film (2). The dielectric contact area (112) is an area that applies a load by contacting the high-pressure dielectric film (2), and the dielectric non-contact area (111) is an area that pushes toward the feeder (5) side on the upper surface of the high-pressure dielectric film (2) without having a contact relationship with the high-pressure dielectric film (2).

[0062] The dielectric contact area (112) overlaps with the peripheral area of ​​the high-pressure dielectric film (2) and the supporting surface (10F) of the dielectric film support member (10) when viewed in a planar view, and the dielectric non-contact area (111) overlaps with the intermediate area that is inner to the peripheral area of ​​the high-pressure dielectric film (2) when viewed in a planar view. That is, the intermediate area becomes the area adjacent to the feeder (5) side from the peripheral area of ​​the high-pressure dielectric film (2).

[0063] The dielectric film suppression member (11) is composed of metal or the like, has conductivity, and is set to a reference potential, which is ground potential, through the housing (1), the installation bolt (31), and the compression member (12). The installation bolt (31) and the compression member (12) also have conductivity.

[0064] Accordingly, the high-pressure side dielectric film (2) is suppressed from above by the dielectric film suppression member (11) in the dielectric contact area (112). Below, the combined structure of the dielectric film support member (10), the dielectric film suppression member (11), and the pressure member (12) will be described in detail.

[0065] As shown in FIG. 2, a compression member (12) is placed on the upper surface of a dielectric film support member (10), and the compression member (12) and the dielectric film support member (10) are fixed on the lower part (1a) of the housing (1) by means of an installation bolt (31).

[0066] As illustrated in FIGS. 24 and 25, the dielectric film support member (10) is circular, having a central opening (100) in the center when viewed in a planar view. A stepped structure including a stepped portion (102) and a peripheral upper surface (101) is provided in an annular shape around the central opening (100). The upper surface of the stepped portion (102) becomes the support surface (10F). A plurality of through holes (10h) are arranged in a circular shape on the peripheral upper surface (101) on the outer side of the stepped portion (102) (support surface (10F)).

[0067] Meanwhile, as illustrated in FIGS. 9 and 10, the high-pressure dielectric film (2) is circular, having a recess (28) for arranging feeders in the center when viewed in a planar view. An annular surrounding surface area (27) is provided around the recess (28) for arranging feeders. Additionally, the high-pressure dielectric film (2) has a circular recess bottom surface (26) when viewed in a planar view, and the bottom surface around the recess bottom surface (26) becomes an annular convex bottom surface (23) when viewed in a planar view.

[0068] As shown in FIGS. 13 and 14, the feeder (5) has a cylindrical shape. The feeder (5) is positioned on the upper surface of the high-pressure dielectric film (2) such that the bottom surface of the feeder (5) is positioned on the recess (28) for feeder placement in the high-pressure dielectric film (2).

[0069] An alternating voltage from an alternating power source (15) is applied to the first electrode conductive film, the feeder (5). Additionally, as shown in FIG. 5, the concave portion (28) for arranging the feeder includes the feeder (5) when viewed in a planar view and has a planar shape that is slightly wider than the feeder (5).

[0070] The high-pressure side dielectric film (2) is positioned on the dielectric film support member (10) in such a manner that the support surface (10F) of the dielectric film support member (10) and the convex bottom surface (23) of the high-pressure side dielectric film (2) are in contact. The high-pressure side dielectric film (2) and the dielectric film support member (10) are in contact through a sealing material such as an O-ring, which is not shown.

[0071] Additionally, as shown in FIGS. 26 and 27, the dielectric film suppression member (11) is circular, having a central opening (110) in the center when viewed in a planar view. An annular lower surface area provided on the outer side of the central opening (110) becomes a dielectric non-contact area (111), and an annular lower surface area provided on the outer side of the dielectric non-contact area (111) becomes a dielectric contact area (112).

[0072] As shown in FIG. 28, the dielectric contact region (112) protrudes downward (in the -Z direction) from the dielectric non-contact region (111) and has a contact relationship with the upper surface U2 of the high-pressure dielectric film (2). Meanwhile, the dielectric non-contact region (111) is not in contact with the upper surface U2 of the high-pressure dielectric film (2) because there is a gap SP11 between it and the upper surface U2 of the high-pressure dielectric film (2).

[0073] As shown in FIGS. 29 and 30, the compression member (12) is circular, having a central opening (120) in the center when viewed in a planar view. A plurality of inner through holes (121h) are arranged in a circular shape in the outer circumference area (125) on the outer side of the central opening (120), and a plurality of outer through holes (122h) are arranged in a circular shape in the outer circumference area of ​​the plurality of inner through holes (121h).

[0074] In this way, a plurality of inner through holes (121h) and a plurality of outer through holes (122h) are provided in the outer circumference region (125) of the compression member (12). Additionally, each of the plurality of inner through holes (121h) becomes a through hole with a cut tab.

[0075] A portion of the outer circumference region (125) of the compression member (12) of the above-described structure is loaded onto the dielectric film support member (10), and the dielectric film support member (10) and the compression member (12) are fixed to the bottom of the housing (1) by means of a plurality of installation bolts (31). The threaded portions of the plurality of installation bolts (31) penetrate the plurality of outer through holes (122h) and the plurality of through holes (10h) and are installed on the bottom of the housing (1a).

[0076] As shown in FIGS. 2 to 6, the compression member (12) is positioned in an area that overlaps with the dielectric film support member (10) and the dielectric film suppression member (11) when viewed in a planar view.

[0077] Meanwhile, a plurality of compression auxiliary members (32) are installed in the compression member (12) in a manner that penetrates the plurality of inner penetration holes (121h) of the compression member (12). Bolts or fixing screws can be considered as compression auxiliary members (32). A plurality of compression auxiliary members (32) are installed within the plurality of inner penetration holes (121h) so as to compress the dielectric film compression member (11) by the plurality of compression auxiliary members (32). The plurality of compression auxiliary members (32) are provided at a position that overlaps the dielectric contact area (112) of the dielectric film compression member (11) and the convex bottom surface (23) of the high-pressure dielectric film (2) when viewed in a planar view.

[0078] Accordingly, the high-pressure side dielectric film (2) is suppressed from the upper dielectric contact area (112) by the dielectric film suppression member (11) receiving the pressure of the plurality of suppression auxiliary members (32).

[0079] As described above, in the electrode unit (50) of the active gas generating device (71) of the embodiment (1), the high-pressure side dielectric film (2), which is the dielectric film for the first electrode, is compressed from the upper dielectric contact area (112) by a dielectric film compression member (11) that receives a compression force from a plurality of compression auxiliary members (32). Because of this, the area where a load is applied to the high-pressure side dielectric film (2) by the dielectric film compression member (11) can be limited only to the lower area of ​​the dielectric contact area (112).

[0080] As a result, the active gas generating device (71) of embodiment 1 can stably fix the high-pressure dielectric film (2) between the dielectric contact area (112) of the dielectric film suppression member (11) and the support surface (10F) of the dielectric film support member (10) without imparting unnecessary bending stress to the high-pressure dielectric film (2).

[0081] The dielectric film suppression member (11) is set to a reference potential, which is a ground potential, and has conductivity. The dielectric non-contact region (111) of the dielectric film suppression member (11) overlaps with the intermediate region of the high-voltage side dielectric film (2) when viewed in a plane.

[0082] Accordingly, the electrode unit (50) can reduce the electric field strength of the feeder (5) by means of a dielectric film suppression member (11) having a dielectric non-contact region (111), thereby reducing the potential of the intermediate region of the high-voltage dielectric film (2), and thus can reduce the potential in the outer diameter direction of the high-voltage dielectric film (2) and the ground-side dielectric film (3).

[0083] As a result, the electrode unit (50) in the active gas generating device (71) of embodiment 1 can reliably prevent insulation breakdown in the gap (20) between the high-voltage dielectric film (2) and the dielectric film support member (10).

[0084] (Grounding conductor (6))

[0085] As illustrated in FIGS. 15 to 17, the grounding conductor (6) accommodated in the conductor receiving space (6S) of the housing (1) is circular when viewed in a planar view and has a raw gas buffer space (61) and a slit space (62) in the end area of ​​the bottom surface.

[0086] The raw gas buffer space (61) is formed in an annular shape when viewed in planar form and is connected to the gas flow path (21) as shown in FIG. 2, and raw gas G1 supplied from the outside can be introduced into the raw gas buffer space (61) through the gas flow path (21).

[0087] A plurality of slit spaces (62) are arranged in a scattered manner around the raw gas buffer space (61). As shown in FIG. 17, each of the plurality of slit spaces (62) is connected to the raw gas buffer space (61), and raw gas G1 can be circulated from the raw gas buffer space (61) through the slit spaces (62).

[0088] As shown in FIGS. 6 and FIGS. 17, the side space (63) is a gap space between the inner side of the conductor receiving space (6S) and the outer side of the grounding conductor (6), and is provided in an annular shape when viewed in a plane.

[0089] Since the dielectric film support member (10) and the ground conductor (6) have a positional relationship as shown in FIGS. 3 and 4, the raw gas G1 passing through the side space (63) is supplied to the lower side region R10 of the dielectric film support member (10).

[0090] In this way, the raw gas buffer space (61) is provided on the lower side of the grounding conductor (6) and receives raw gas G1 through the gas flow path (21). Each of the multiple slit spaces (62) is provided on the lower side of the grounding conductor (6) and is connected to the raw gas buffer space (61).

[0091] The side space (63) is provided on the side of the grounding conductor (6) and is connected to a plurality of the slit spaces. As described above, the flow space for raw gas includes a raw gas buffer space (61), a plurality of slit spaces (62), and a side space (63).

[0092] Accordingly, the raw gas G1 supplied from the outside to the gas path (21) is guided to the discharge space (4) via the raw gas buffer space (61), the slit space (62), and the side space (63).

[0093] Each of the multiple slit spaces (62) is set as a narrow space where it is difficult for the raw gas to flow compared to the raw gas buffer space (61), so that the raw gas G1 flows into each of the multiple slit spaces (62) after temporarily staying in the raw gas buffer space (61). That is, the multiple slit spaces (62) have a smaller conductance, which is a coefficient indicating the ease of flow of the raw gas G1 compared to the raw gas buffer space (61) or the side space (63).

[0094] As a result, the active gas generating device (71) of embodiment 1 can spatially supply raw gas G1 to the discharge space (4). That is, raw gas G1 is supplied uniformly from the periphery of the circular dielectric space (18) when viewed in a planar view toward the central discharge space (4).

[0095] By lowering the conductance of the slit space (62), the differential pressure between the raw gas buffer space (61) and the side space (63) increases, and the fluctuation in the flow rate of the raw gas G1 flowing through each of the multiple slit spaces (62) is reduced. Accordingly, the raw gas G1 is supplied uniformly toward the discharge space (4). In addition, the flow rate of the raw gas G1 is adjusted, for example, by a mass flow controller (MFC) provided upstream of the gas path (21).

[0096] In a general active gas generating device, if the raw gas G1 is not supplied uniformly, the time the raw gas G1 passes through the discharge space (4) changes, resulting in a problem where the generation efficiency of the active gas G2 deteriorates. The active gas generating device (71) of Embodiment 1 can supply the raw gas G1 uniformly, so the above-mentioned problem does not occur.

[0097] (Grounding side electrode component E2 and buffer space for active gas (68))

[0098] As described above, the ground-side electrode component E2, which is the second electrode component, includes a ground-side dielectric film (3) and a conductive film (7).

[0099] As shown in FIGS. 11 and 12, the ground-side dielectric film (3) is circular when viewed in a planar view and has a circular dielectric penetration hole (3h) in the center.

[0100] As illustrated in FIGS. 18 and 19, the cover dielectric film (8) is circular when viewed in a planar view and has a circular cover through hole (8h) in the center. Additionally, it is preferable that the cover dielectric film (8) use the same constituent material as the ground-side dielectric film (3). This is to prevent deformation from occurring when the coefficient of thermal expansion differs between the cover dielectric film (8) and the ground-side dielectric film (3). Furthermore, materials with similar coefficients of thermal expansion may be selected as the materials for the cover dielectric film (8) and the ground-side dielectric film (3), respectively.

[0101] As shown in FIGS. 20 and 21, the conductive film (7) is circular when viewed in a planar view and has a circular conductive film opening (7h) in the center when viewed in a planar view.

[0102] The dielectric penetration hole (3h) and the conductive film opening (7h) each overlap with the buffer space (68) for active gas when viewed in a planar view, and as shown in FIG. 21, the conductive film opening (7h) includes the dielectric penetration hole (3h) when viewed in a planar view and has a shape wider than the dielectric penetration hole (3h).

[0103] A conductive film (7) is provided on the lower surface of the ground-side dielectric film (3) in a manner that aligns the center positions of the ground-side dielectric film (3) and the conductive film (7), respectively. The diameter of the conductive film (7) is set to be approximately the same as the diameter of the ground-side dielectric film (3), but since a conductive film opening (7h) wider than the dielectric penetration hole (3h) is provided in the center, the formation area of ​​the conductive film (7) is narrower than the formation area of ​​the ground-side dielectric film (3).

[0104] The inner boundary (7e) of the conductive film, which is the outer circumferential line of the conductive film opening (7h), is the end of the dielectric penetration hole (3h) side in the conductive film (7), and the conductive film (7) is not formed in the area inside the inner boundary (7e). The inner boundary (7e) of the conductive film becomes the electrode boundary line of the conductive film (7). Accordingly, as shown in FIG. 21, the formation area A7 of the conductive film (7) on the lower surface of the ground-side dielectric film (3) is the area extending from the outer circumferential position of the ground-side dielectric film (3) to the inner boundary (7e) of the conductive film.

[0105] As illustrated in FIGS. 20 and 21, the cover dielectric film (8) is formed in a circular shape extending across the lower surface of the conductive film (7), including the inner boundary (7e) of the conductive film on the lower surface of the ground-side dielectric film (3). However, the cover dielectric film (8) has a cover through hole (8h) in the center. That is, the outer diameter of the conductive film opening (7h) of the conductive film (7) is shorter than the outer diameter of the cover dielectric film (8), resulting in a dimensional relationship.

[0106] The cover penetration hole (8h) has a shape similar to that of the dielectric penetration hole (3h), and the cover penetration hole (8h) is included in the conductive film opening (7h) and has a shape narrower than that of the conductive film opening (7h). Accordingly, the cover dielectric film (8) covers the inner boundary (7e) (electrode boundary line) of the conductive film (7). And, the lower surface of the conductive film (7) that is not covered by the cover dielectric film (8) and the upper surface of the ground conductor (6) are in contact with each other.

[0107] As shown in FIGS. 15 and 16, the buffer space (68) for active gas provided on the upper part of the grounding conductor (6) is circular when viewed in a planar view, and a plurality of gas outlets (69) are provided around the bottom surface (65) of the buffer space (68) for active gas.

[0108] Figures 15 and 16 also show the formation area of ​​the cover dielectric film (8). As shown in these figures, the outer edge of the cover dielectric film (8) is almost identical to the outer edge of the buffer space (68) for the active gas.

[0109] As shown in FIGS. 2 and FIGS. 16, a shield dielectric film (9) is provided on the bottom surface (65) of the buffer space (68) for active gas.

[0110] As shown in FIGS. 22 and 23, the shield dielectric film (9) is formed in a circular shape when viewed as a plane with a predetermined film thickness.

[0111] The shield dielectric film (9) is provided on the bottom surface (65) of the active gas buffer space (68) in a manner that aligns the center positions of the active gas buffer space (68) and the shield dielectric film (9).

[0112] As shown in FIGS. 15 and 16, the plurality of gas outlets (69) overlap with the cover dielectric film (8) when viewed in a planar view, and also do not overlap with the dielectric penetration hole (3h) and the cover penetration hole (8h) when viewed in a planar view.

[0113] As shown in FIG. 16, a plurality of gas outlets (69) are provided by penetrating a ground conductor (6) around the bottom surface (65) of the buffer space (68) for active gas. That is, a plurality of gas outlets (69) are provided in the peripheral area of ​​the shield dielectric film (9) when viewed in a planar view.

[0114] In the active gas generating device (71) of embodiment 1 of this structure, the raw gas G1 is supplied to the discharge space (4) from outside the metal housing (2) via the gas flow path (21) and the raw gas flow space as described above.

[0115] When raw gas G1 is supplied to the discharge space (4) where dielectric barrier discharge is occurring, the raw gas G1 is activated to become active gas G2, and passes through the dielectric penetration hole (3h) and the cover penetration hole (8h) to be introduced into the active gas buffer space (68). The active gas G2 that has entered the active gas buffer space (68) passes through a plurality of gas outlets (69) provided on the bottom surface of the active gas buffer space (68) and is supplied to the processing space at the rear.

[0116] In the active gas generating device (71) of embodiment 1 of such configuration, the main dielectric space where the high-voltage dielectric film (2), which is the dielectric film for the first electrode, and the ground-side dielectric film (3), which is the dielectric film for the second electrode, face each other becomes the dielectric space (18). The dielectric space (18) is circular when viewed in a planar view. Additionally, the space where the high-voltage dielectric film (2) and the shield dielectric film (9) face each other is defined as an auxiliary dielectric space. The discharge space (4) includes a main discharge space where the feeder (5) and the conductive film (7) overlap when viewed in a planar view within the dielectric space (18).

[0117] In order to form the above main discharge space, the high-voltage side dielectric film (2) and the ground-side dielectric film (3) are installed so as to be at a certain distance in the height direction (Z direction), and the above main discharge space of the discharge space (4) exists within the dielectric space (18) between the high-voltage side dielectric film (2) and the ground-side dielectric film (3).

[0118] The discharge space (4) also includes an auxiliary discharge space (44) that includes a dielectric penetration hole (3h), a cover penetration hole (8h), and a part of the buffer space (68) for active gas on the shield dielectric film (9) within the auxiliary dielectric space.

[0119] In the grounding conductor (6), the bottom surface area under the bottom surface (65) is used as a conductive film for a grounding electrode set to a grounding potential, and by applying a discharge voltage between the power supply (5) receiving an alternating voltage from the alternating power source (15) and the conductive film for the grounding electrode, an auxiliary discharge space (44) can be created.

[0120] As described above, the auxiliary discharge space (44) includes a dielectric penetration hole (3h), a cover penetration hole (8h), and a part of the buffer space (68) for active gas. Thus, the discharge space (4) formed in Embodiment 1 includes a main discharge space and an auxiliary discharge space (44) within the dielectric space (18).

[0121] In the active gas generating device (71) of embodiment 1, the path from the auxiliary discharge space (44) to each of the plurality of gas outlets (69) is defined as an active gas flow path.

[0122] In the active gas generating device (71) of embodiment 1, the auxiliary discharge space (44), which is part of the discharge space (4), includes a dielectric penetration hole (3h), a cover penetration hole (8h), and a part of the buffer space (68) for active gas, so the active gas flow path from the auxiliary discharge space (44) to the plurality of gas outlets (69) can be restricted to the minimum necessary volume, thereby suppressing the active gas G2.

[0123] In addition, the cover dielectric film (8) in the ground-side electrode component E2 of the electrode unit (50) covers the inner boundary (7e) of the conductive film, which is the electrode boundary line of the conductive film (7), within the buffer space (68) for active gas, and also overlaps with a plurality of gas outlets (69) when viewed in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 is lost when the active gas G2 collides with the conductive film (7).

[0124] As a result, the active gas generating device (71) of embodiment 1 can supply a high concentration of active gas G2 from a plurality of gas outlets (69) to a processing space at the rear.

[0125] The electrode unit (50) of Embodiment 1 has the structure described above, so that the part facing the discharge space (4) consists only of a component made of a dielectric material that is an insulator (high-voltage side dielectric film (2), ground side dielectric film (3), cover dielectric film (8) and shield dielectric film (9)). When a metal material faces the discharge, it easily ionizes, and metal ions are included in the gas, causing contamination. On the other hand, since the dielectric does not easily ionize even when facing the discharge, contamination in the gas can be prevented.

[0126] (Housing opening (41))

[0127] As shown in FIG. 2, the housing bottom (1a) of the housing (1) has a housing opening (41). The housing opening (41) is provided in an area that overlaps with the buffer space (68) for active gas when viewed in plane and penetrates the housing bottom (1a).

[0128] Accordingly, active gas G2 ejected from a plurality of gas outlets (69) is guided to a lower processing space through the housing opening (41).

[0129] As shown in FIG. 2, the housing opening (41) provided in the bottom part (1a) of the housing has a tapered shape with a lower outer edge (41L) as it faces downward, and as shown in FIG. 2 and FIG. 7.

[0130] In the active gas generating device (71) of embodiment 1, the housing opening (41) provided at the bottom part (1a) of the housing (1) has a tapered shape in which the opening area widens as it faces downward.

[0131] For this reason, the active gas generating device (71) of embodiment 1 can minimize the loss caused by the active gas G2 ejected from a plurality of gas outlets (69) colliding with the bottom of the housing (1a), and supply a high concentration of active gas G2 to the lower processing space.

[0132] <Embodiment 2>

[0133] FIG. 31 is a plan view schematically illustrating the planar structure of an active gas generating device (72) which is embodiment 2 of the present disclosure. FIG. 32 is a cross-sectional view illustrating the cross-sectional structure of the DD cross section of FIG. 31.

[0134] Hereinafter, the same components as the active gas generating device (71) of Embodiment 1 shown in FIGS. 1 to 30 are given the same reference numerals, and the characteristic parts of the active gas generating device (72) of Embodiment 2 will be described in detail.

[0135] In the active gas generating device (72) of embodiment 2, three electrode units (51 to 53), which are a plurality of electrode units, are accommodated in the space S1 inside the housing of the housing (1X). A raw gas G1 is supplied to each of the electrode units (51 to 53) through a gas flow path (21).

[0136] In addition, in the housing bottom (1a) of the housing (1X) of the active gas generating device (72), a cooling path (22) through which a refrigerant flows is further provided in addition to the gas path (21). As shown in FIGS. 31 and 32, the cooling path (22) is provided below the ground conductor (6) of each electrode unit (51 to 53). That is, the cooling path (22) and the ground conductor (6) of each electrode unit (51 to 53) overlap when viewed in a planar view.

[0137] The active gas generating device (72) of embodiment 2 of the above configuration exhibits the following effects in addition to the effects of embodiment 1.

[0138] In the active gas generating device (72) of embodiment 2, the housing bottom (1a) of the housing (1X) has a cooling path (22) through which a refrigerant flows, so that the grounding conductor (6) of each electrode unit (51 to 53) and the grounding dielectric film (3) placed above the grounding conductor (6) can be cooled.

[0139] Accordingly, the heat generated by the dielectric barrier discharge in the discharge space (4) can be removed by the cooled ground-side dielectric film (3). As a result, the active gas generating device (72) of Embodiment 2 can discharge at high power in each of the electrode units (51 to 53) and can achieve a high concentration of active gas G2.

[0140] <Embodiment 3>

[0141] FIGS. 33 and FIGS. 34 are explanatory diagrams illustrating the structure of a feeder (5B) used in each of the electrode units (51 to 53) of an active gas generating device (73) of embodiment 3 of the present disclosure. FIG. 33 illustrates the planar structure of the feeder (5B), and FIG. 34 illustrates the cross-sectional structure in the EE cross section of FIG. 33.

[0142] The active gas generating device (73) of Embodiment 3 is characterized by replacing the feed element (5) with the feed element (5B) compared to Embodiment 1. Accordingly, the overall structure of the active gas generating device (73) and the overall structure of the electrode unit (50) (51 to 53) are the same as the structure of Embodiment 1 shown in FIGS. 1 to 30 or Embodiment 2 shown in FIGS. 31 and 32.

[0143] At this time, the lower surface of the feeder (5B) in the electrode unit (50) and the upper surface of the high-voltage dielectric film (2) are in contact through a conductive liquid. For example, "Galinstan" (registered trademark) is considered as such a liquid.

[0144] Hereinafter, the same components as the active gas generating device (71) of Embodiment 1 are given the same reference numerals, and the characteristic parts of the active gas generating device (73) of Embodiment 3 will be described in detail.

[0145] The first electrode conductive film, the feeder (5B), has a refrigerant flow path (58) for flowing refrigerant inside the feeder (5B). As shown in FIGS. 33 and 34, in order to flow refrigerant throughout the feeder (5B), the refrigerant flow path (58) is provided over most of the feeder (5B) while being meandering when viewed in a planar manner.

[0146] The power supply unit (5B) has a refrigerant inlet (56) for receiving refrigerant from the outside and supplying refrigerant to the refrigerant flow path (58), and a refrigerant outlet (57) on its surface for discharging refrigerant that has flowed through the refrigerant flow path (58) to the outside.

[0147] FIG. 35 is an explanatory diagram schematically illustrating the refrigerant structure in the basic configuration of Embodiment 3. As shown in FIG. 35, the refrigerant is supplied from the outside along the refrigerant flow D1 and discharged to the outside along the refrigerant flow D2. As shown in the figure, the refrigerant function is realized by the current introduction members (14A and 14B) and the power supply member (5B).

[0148] In addition, in the basic configuration of Embodiment 3, a cooling structure as shown in FIG. 35 is provided in each of the electrode units (51 to 53), which are a plurality of electrode units.

[0149] As illustrated in the drawing, current introduction members (14A and 14B) are each provided by penetrating the upper part (1c) of the housing (1)(1X). The current introduction members (14A and 14B) that serve as the first and second current introduction members have the same structure. Hereinafter, the current introduction member (14A) among the current introduction members (14A and 14B) will be described as a representative example.

[0150] The current introduction member (14A) includes a conductive tube (141), a flange (142), and an insulator (143) as main components. The conductive tube (141) and the flange (142) each have conductivity, and the insulator (143) has insulation.

[0151] The conductive tube (141) is used as an electrical connection means between the alternating current power source (15) and the power supply (5B), and also has a through hole capable of transporting a refrigerant.

[0152] In the current introduction member (14A), the conductive pipe (141) and the insulator (143) are joined, and the flange (142) and the insulator (143) are joined, so that the conductive pipe (141), the flange (142), and the insulator (143) have an integrated structure. However, by providing the insulator (143) between the conductive pipe (141) and the flange (142), the conductive pipe (141) and the flange (142) are prevented from being electrically connected.

[0153] The current introduction members (14A and 14B) are each fixed to the upper part (1c) of the housing (1X) by a flange (142).

[0154] The first current introduction member, the current introduction member (14A), has an electrical connection with the power supply member (5B) and is also connected to the power supply member (5B) so as to supply refrigerant from the refrigerant inlet (56) to the refrigerant flow path (58) through the conduction pipe (141). That is, in the current introduction member (14A), electrical connection with the power supply member (5B) is achieved through the conduction pipe (141), and the refrigerant flowing through the conduction pipe (141) is supplied from the refrigerant inlet (56) to the refrigerant flow path (58).

[0155] The second current introduction member (14B) has an electrical connection with the power supply member (5B) and is also connected to the power supply member (5B) so that refrigerant can be discharged to the outside through the conduction pipe (141) from the refrigerant outlet (57). That is, in the current introduction member (14B), electrical connection with the power supply member (5B) is facilitated by the conduction pipe (141), and refrigerant flowing inside the conduction pipe (141) is supplied to the outside.

[0156] In addition, for each of the current introduction members (14A and 14B), welding or connection through a joint is employed as a means of connecting the conductive tube (141) and the power supply (5B).

[0157] The active gas generating device (73), which is the basic configuration of Embodiment 3 of the above configuration, exhibits the following effects in addition to the effects of Embodiment 1.

[0158] In the active gas generating device (73) of embodiment 3, since the feeder (5B) has a refrigerant flow path (58) inside, the refrigerant supplied from the refrigerant inlet (56) flows into the refrigerant flow path (58), and the refrigerant that has flowed through the refrigerant flow path (58) is discharged to the outside from the refrigerant outlet (57) to circulate the refrigerant, thereby cooling the feeder (5B) and the high-pressure dielectric film (2) provided below the feeder (5B).

[0159] In addition, the current introduction members (14A and 14B) have a cooling structure in which a refrigerant is circulated in the refrigerant flow path (58) of the current introduction member (5B) in addition to the current introduction function of supplying an alternating voltage from the alternating power source (15) to the current introduction member (5B), so the number of parts can be kept to a minimum and each of the current introduction members (14A and 14B) can be cooled.

[0160] Generally, since the allowable current of the current introduction members (14A and 14B) is determined by the allowable temperature of the current introduction members (14A and 14B), the allowable current can be significantly increased even with current introduction members (14A and 14B) using a conductive tube (141) containing a thin conductor by configuring the current introduction members (14A and 14B) themselves to be coolable.

[0161] In addition, by providing a conductive liquid between the high-pressure dielectric film (2) and the feeder (5B), the thermal conductivity between the feeder (5B) and the high-pressure dielectric film (2) can be improved, and the problem of a small gap occurring between the feeder (5B) and the high-pressure dielectric film (2) due to processing tolerances or surface roughness can be resolved.

[0162] Due to the above effects, the electrode units (51 to 53) in the active gas generating device (71) of embodiment 3 can each be discharged at high power, and the high concentration of active gas G2 can be realized.

[0163] (Variation example)

[0164] FIG. 36 is an explanatory diagram schematically illustrating the cooling structure in an active gas generating device (73X) which is a variation of Embodiment 3.

[0165] In FIG. 36, electrode units (51 and 52) are illustrated as first and second electrode units. Hereinafter, the same components as the active gas generating device (71) of Embodiment 1 or the active gas generating device (73) which is the basic configuration of Embodiment 3 are given the same reference numerals, and the characteristic parts of the active gas generating device (73X), which is a modified example of Embodiment 3, will be described in detail.

[0166] In the following description, for the sake of explanation, the refrigerant flow path (58), refrigerant inlet (56), and refrigerant outlet (57) of the supply member (5B) in the first electrode unit (51) are defined as the first refrigerant flow path, the first refrigerant inlet, and the first refrigerant outlet.

[0167] Likewise, the refrigerant flow path (58), refrigerant inlet (56), and refrigerant outlet (57) in the electrode unit (52), which is the second electrode unit, are defined as the second refrigerant flow path, the second refrigerant inlet, and the second refrigerant outlet.

[0168] As illustrated in FIG. 36, the active gas generating device (73X) of the modified example adds a buffer conductor (13) and relay conductors (131 to 134) as new components. The buffer conductor (13) becomes a refrigerant relay member, and the relay conductors (131 to 134) become the first to fourth relay conductors.

[0169] The buffer conductor (13), which is a refrigerant relay member, has a conductive refrigerant flow path (135) provided inside and a first and second through flow path (136 and 137) each provided penetrating from the upper surface to the lower surface.

[0170] The first to fourth relay conductors (131 to 134) each have conductivity and also have a refrigerant transport function.

[0171] It is preferable that a portion of each of the relay conductors (131 to 134) be shaped like a corrugated box. The reason for making a portion of the relay conductors (131 to 134) shaped like a corrugated box is to absorb the misalignment of the distance between the upper surface of the buffer conductor (13) and the feeder (5B) due to the tolerance of the parts, that is, to absorb the tolerance when manufacturing the active gas generating device (73X).

[0172] The above tolerance is obtained by accumulating not only the tolerance of the length of the relay conductor (131 to 134), but also the tolerance of the height of the feeder (5B) and the thickness tolerance of the high-pressure dielectric film (2) located at the bottom of the feeder (5B).

[0173] The first to fourth relay conductors (131 to 134) are arranged between the buffer conductor (13), which is a refrigerant relay member, and the feeder (5B) of each electrode unit (51 and 52) so as to satisfy the following first to fourth refrigerant flow conditions.

[0174] First refrigerant flow condition... condition in which refrigerant flows between the conduction pipe (141) of the current introduction member (14A) and the first refrigerant inlet through the through passage (136) and the relay conduction pipe (131),

[0175] Second refrigerant flow condition... condition in which refrigerant flows between the first refrigerant outlet and the relay refrigerant flow path (135) through the relay conduction pipe (132),

[0176] Third refrigerant flow condition... condition in which refrigerant flows between the relay refrigerant flow path (135) and the second refrigerant inlet through the relay conduction pipe (133),

[0177] Fourth refrigerant flow condition... a condition in which refrigerant flows between the second refrigerant outlet and the conduction pipe (141) of the current introduction member (14B) through the relay conduction pipe (134) and the through flow path (137),

[0178] In this way, in the modified active gas generating device (73X), current introduction members (14A and 14B) are shared between the electrode units (51 and 52).

[0179] The active gas generating device (73X), which is a modified example of embodiment 3 of the above configuration, exhibits the following effects in addition to the effects of the basic configuration of embodiment 1 and embodiment 3.

[0180] An active gas generating device (73X), which is a modified example of Embodiment 3, has relay conductors (131 to 134) arranged between the buffer conductor (13) and the feeder (5B) of each electrode unit (51 and 52) to satisfy the first to fourth refrigerant circulation conditions described above. As a result, the active gas generating device (73X) of the modified example can cool the feeder (5B) of the electrode unit (51) and the feeder (5B) of the electrode unit (52) together by circulating the refrigerant in a single refrigerant loop.

[0181] Additionally, one refrigerant loop includes a current introduction member (14A), a through-flow path (136), a relay conduction pipe (131), a first refrigerant inlet, a first refrigerant flow path, a first refrigerant outlet, a relay conduction pipe (132), a relay refrigerant flow path (135), a relay conduction pipe (133), a second refrigerant inlet, a second refrigerant flow path, a second refrigerant outlet, a relay conduction pipe (134), a through-flow path (137), and a current introduction member (14B).

[0182] As a result, in the active gas generating device (73X) of the modified embodiment 3, the feeder (5B) and high-voltage dielectric film (2) of each electrode unit (51 and 52) can be cooled with the minimum necessary device configuration of adding buffer conductors (13) and relay conductors (131 to 134) without increasing the number of relatively expensive current introduction members (14A and 14B).

[0183] Additionally, although the modified example illustrated in FIG. 36 illustrates a cooling structure for a combination of electrode units (51 and 52), the cooling structure of the modified example can be expanded to realize a cooling structure for a combination of electrode units (51 to 53) using only current introduction members (14A and 14B).

[0184] <Embodiment 4>

[0185] FIG. 37 is an explanatory diagram illustrating the cross-sectional structure of an electrode unit (50X) used in an active gas generating device (74) of Embodiment 4. Additionally, the electrode unit (50X) corresponds to any of the electrode units (51 to 53) illustrated in Embodiment 1. Furthermore, the overall configuration of the active gas generating device (74) is the same as that of the active gas generating device (71) illustrated in FIG. 1.

[0186] FIGS. 38 and FIGS. 39 are explanatory diagrams schematically illustrating the structure of the high-pressure side dielectric film (2B), respectively. FIG. 38 illustrates the planar structure of the high-pressure side dielectric film (2B), and FIG. 39 illustrates the cross-sectional structure of the high-pressure side dielectric film (2B).

[0187] The electrode unit (50X) is characterized by replacing the high-voltage dielectric film (2) of the electrode unit (50) of embodiment 1 with the high-voltage dielectric film (2B).

[0188] Hereinafter, the same components as the electrode unit (50) of Embodiment 1 are given the same reference numerals, and the characteristic parts of the electrode unit (50X) of Embodiment 4 will be described in detail.

[0189] As illustrated in FIG. 38, the high-pressure dielectric film (2B) has a triple circular insulator structure portion (24) when viewed in a planar manner on the surrounding surface area (27) of the concave portion (28) for the placement of the feeder. The insulator structure portion (24) is an uneven structure provided on the upper surface of the high-pressure dielectric film (2B). FIG. 38 illustrates an insulator structure portion (24) formed from a dielectric of the same constituent material as the high-pressure dielectric film (2B).

[0190] As illustrated in FIG. 37, the high-voltage dielectric film (2B) in the electrode unit (50X) has an insulator structure portion (24) with an uneven structure on an upper surface that does not overlap with the feeder (5) and the dielectric film suppression member (11) when viewed in a planar view. That is, in Embodiment 4, an insulator structure portion (24) is provided on an upper surface corresponding to the exposed area EX2 of the high-voltage dielectric film (2) of Embodiment 1 shown in FIG. 2, etc. FIG. 37 illustrates an insulator structure portion (24) formed from a dielectric.

[0191] Accordingly, as shown in FIG. 37, the electrode unit (50X) of embodiment 4 has an insulator structure portion (24) between the dielectric film suppression member (11) and the feeder (5) on the upper surface of the high-voltage dielectric film (2B).

[0192] The following first and second methods are considered as methods for forming the insulator structure portion (24). The first method is a method of manufacturing a high-pressure dielectric film (2B) having an insulator structure portion (24) selectively formed on the upper surface of a basic structure of the high-pressure dielectric film (2B) by performing cutting on the flat upper surface. In the case of the first method, the insulator structure portion (24) is made of the same constituent material as the high-pressure dielectric film (2B).

[0193] The second method is a method of manufacturing a high-pressure dielectric film (2B) by separately manufacturing an insulator structure part (24) and then selectively attaching the insulator structure part (24) to a flat upper surface of the basic structure of the high-pressure dielectric film (2B) using an adhesive.

[0194] In the case of the second method, the insulator structure part (24) may be made of the same constituent material as the high-pressure side dielectric film (2B) or a different constituent material.

[0195] In the active gas generating device (74) of embodiment 4, the high-voltage dielectric film (2B) of the electrode unit (50X) has an insulator structure part (24) with an uneven structure between the dielectric film suppressing member (11) and the feeder (5) on the upper surface, so that surface discharge between the feeder (5) and the dielectric film suppressing member (11) can be prevented.

[0196] In addition, in embodiment 4 illustrated in FIGS. 37 to 39, the constituent material of the insulator structure part (24) is formed with the same dielectric as the high-pressure side dielectric film (2B), but the insulator structure part (24) may be provided with a constituent material different from the high-pressure side dielectric film (2B) other than the dielectric.

[0197] Although the present disclosure has been described in detail, the foregoing description is illustrative in all respects and is not limited thereto. It should be understood that countless variations not exemplified may be conceived without departing from the scope of the present disclosure.

[0198] That is, within the scope of the present disclosure, it is possible to freely combine each embodiment, or appropriately modify or omit each embodiment. Explanation of the symbols

[65535] 1, 1X: Housing 2, 2B: High-pressure side dielectric film 3: Ground-side dielectric film 4: Discharge space 5, 5B: Feeder 6: Ground conductor 7: Conductive film 8: Cover dielectric film 9: Shield dielectric film 10: Dielectric film support member 11: Dielectric film suppressor member 12: Pressing member 13: Buffer conductor 14A, 14B: Current introduction member 21: Gas passage 22: Cooling path 24: Insulator structure part 41: Housing opening 50, 50X, 51 to 53: Electrode unit 56: Refrigerant inlet 57: Refrigerant outlet 58: Refrigerant passage 61: Raw gas buffer space 62: Slit space 63: Side space 68: Buffer space for active gas 69: Gas outlet 71 to 74, 73X: Active gas generating device 131 to 134: Relay conduit E1: High-pressure side electrode component E2: Ground-side electrode component

Claims

Claim 1 An active gas generating device that generates active gas by activating a raw gas supplied to a discharge space, comprising an electrode unit and a housing having a conductive housing that accommodates the electrode unit in a space within the housing, wherein the housing has a bottom portion comprising a flat surface and a conductor receiving space that is concave in the depth direction from the flat surface, wherein the electrode unit comprises a first electrode component, a second electrode component provided below the first electrode component, and a reference potential conductor provided below the second electrode component and accommodated within the conductor receiving space, wherein the first electrode component comprises a dielectric film for the first electrode and a conductive film for the first electrode formed on the upper surface of the dielectric film for the first electrode, and the conductive film for the first electrode comprises a feed element, wherein the second electrode component comprises a dielectric film for the second electrode and a conductive film for the second electrode formed on the lower surface of the dielectric film for the second electrode, wherein the reference potential conductor has an active gas buffer space at the top, and the second electrode component is disposed to block the active gas buffer space, and the second The dielectric film for the electrode has a dielectric penetration hole penetrating the second dielectric film for the electrode in an area overlapping with the buffer space for the active gas when viewed in a planar view, and the conductive film for the second electrode has a conductive film opening in an area overlapping with the buffer space for the active gas when viewed in a planar view, and the conductive film opening overlaps with the dielectric penetration hole when viewed in a planar view, and the bottom of the housing has a gas flow path for receiving raw gas from the outside, and a flow space for raw gas is provided between the reference potential conductor and the conductor receiving space of the housing, so that the space where the dielectric film for the first electrode and the dielectric film for the second electrode face each other is defined as a main dielectric space, and the discharge space includes a main discharge space within the main dielectric space, which is an area where the first and second conductive films for the electrode overlap when viewed in a planar view, and the raw gas is guided into the discharge space through the gas flow path and the flow space for raw gas,An alternating voltage is applied to the first electrode conductive film, and the second electrode conductive film is set to a reference potential through the housing and the reference potential conductor. The active gas generating device further comprises a dielectric film support member having a support surface that supports the first electrode dielectric film from below and is provided on the flat surface of the housing, and a dielectric film suppression member for suppressing the first electrode dielectric film from above. The dielectric film suppression member does not overlap with the first electrode conductive film when viewed in a planar view, and the lower surface of the dielectric film suppression member has a dielectric contact area that contacts the upper surface of the first electrode dielectric film and a dielectric non-contact area that does not contact the upper surface of the first electrode dielectric film. The dielectric contact area overlaps with the peripheral area of ​​the first electrode dielectric film and the support surface of the dielectric film support member when viewed in a planar view, and the dielectric non-contact area overlaps with the intermediate area of ​​the first electrode dielectric film when viewed in a planar view, and the intermediate area extends from the peripheral area toward the first electrode conductive film side. An active gas generating device comprising an adjacent region, wherein the dielectric film suppression member is conductive and set to the reference potential, and wherein the dielectric film for the first electrode is suppressed from above by the dielectric film suppression member in the dielectric contact region. Claim 2 An active gas generating device according to claim 1, wherein the distribution space for raw gas comprises a raw gas buffer space provided on the lower side of the reference potential conductor to receive raw gas through the gas flow path, a slit space provided on the lower side of the reference potential conductor to connect to the raw gas buffer space, and a side space provided on the side side of the reference potential conductor to connect to the slit space, wherein the raw gas is guided to the discharge space via the raw gas buffer space, the slit space, and the side space, and the slit space is set as a space where it is difficult for the raw gas to flow compared to the raw gas buffer space so that the raw gas flows through the slit space after temporarily staying in the raw gas buffer space. Claim 3 In claim 1 or 2, the outer circumference line of the conductive film opening in the second electrode conductive film is defined as an electrode boundary line, and the second electrode component further includes a cover dielectric film covering the electrode boundary line of the second electrode conductive film within the active gas buffer space, and the cover dielectric film has a cover penetration hole penetrating the cover dielectric film in an area overlapping with the dielectric penetration hole when viewed in a planar view, and the active gas generating device further includes a shield dielectric film provided in an area overlapping with the dielectric penetration hole and the cover penetration hole when viewed in a planar view on the bottom surface of the active gas buffer space, and a gas outlet provided penetrating the reference potential conductor in a peripheral area of ​​the shield dielectric film, wherein the gas outlet overlaps with the cover dielectric film when viewed in a planar view and does not overlap with the dielectric penetration hole and the cover penetration hole when viewed in a planar view, and the discharge space has an auxiliary discharge space including the dielectric penetration hole, the cover penetration hole and a part of the active gas buffer space in addition to the main discharge space, and the auxiliary An active gas generating device in which the path from the discharge space to the gas outlet is defined as an active gas distribution path. Claim 4 An active gas generating device according to paragraph 3, wherein the housing bottom portion of the housing has a housing opening in an area that overlaps with the buffer space for the active gas when viewed in plane, the active gas ejected from the gas outlet is guided downward through the housing opening, and the housing opening has a tapered shape in which the opening area widens as it faces downward. Claim 5 An active gas generating device according to claim 1 or 2, wherein the electrode unit comprises a plurality of electrode units, the lower portion of the housing of the housing has a cooling path through which a refrigerant flows, and the cooling path is provided below the reference potential conductor of each of the plurality of electrode units. Claim 6 In claim 1 or 2, the upper surface of the dielectric film for the first electrode and the lower surface of the conductive film for the first electrode are in contact through a conductive liquid, and the conductive film for the first electrode is the power supply, and the power supply has a refrigerant flow path provided internally for flowing a refrigerant, a refrigerant inlet for receiving a refrigerant from the outside and supplying the refrigerant to the refrigerant flow path, and a refrigerant outlet for discharging the refrigerant that has flowed through the refrigerant flow path to the outside, and the active gas generating device has an AC power source that applies the AC voltage, and first and second current introduction members each having conductivity and receiving the AC voltage, and the first and second current introduction members each have a conductive pipe capable of transporting a refrigerant, and the first current introduction member is electrically connected to the power supply and is also connected to the power supply so as to supply a refrigerant from the refrigerant inlet to the refrigerant flow path through the conductive pipe, and the second current introduction member is the power supply and An active gas generating device having an electrical connection relationship and also connected to the power supply so as to allow the refrigerant to be discharged to the outside through the conductive pipe from the refrigerant outlet. Claim 7 In claim 6, the electrode unit comprises a first and a second electrode unit, wherein the refrigerant flow path, the refrigerant inlet, and the refrigerant outlet of the first electrode unit are defined as a first refrigerant flow path, a first refrigerant inlet, and a first refrigerant outlet, and the refrigerant flow path, the refrigerant inlet, and the refrigerant outlet of the second electrode unit are defined as a second refrigerant flow path, a second refrigerant inlet, and a second refrigerant outlet, and the active gas generating device further comprises a refrigerant relay member having conductivity and including a relay refrigerant flow path provided internally, and first and second penetrating flow paths each provided penetrating from an upper surface to a lower surface, and first to fourth relay conductive pipes each having conductivity and each having a refrigerant transport function, and the first to fourth relay conductive pipes are disposed between the refrigerant relay member and the feeder of each of the first and second electrode units so as to satisfy the first to fourth refrigerant flow conditions, and the first refrigerant flow condition is the first penetrating flow path An active gas generating device, wherein the condition is that a refrigerant flows between the first current introduction member and the first refrigerant inlet through the first relay conduction pipe, the second refrigerant flow condition is that a refrigerant flows between the first refrigerant outlet and the relay refrigerant flow path through the second relay conduction pipe, the third refrigerant flow condition is that a refrigerant flows between the relay refrigerant flow path and the second refrigerant inlet through the third relay conduction pipe, and the fourth refrigerant flow condition is that a refrigerant flows between the second refrigerant outlet and the second current introduction member through the fourth relay conduction pipe and the second through-path. Claim 8 In claim 6, the dielectric film for the first electrode has an uneven structure on an upper surface that does not overlap with the feed element and the dielectric film suppression member when viewed in a planar view, in an active gas generating device.

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