Display panel and display apparatus comprising the same, and method for manufacturing the same
Patent Information
- Application Number
- KR1020250131739
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-09-15
- Publication Date
- 2026-08-14
- Estimated Expiration
- 2040-12-24
Smart Images

Figure 112025105622647-PAT00009_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a display device including a light sensor, a display panel provided therein, and a method for manufacturing the display panel. Background Technology
[0003] As the information society develops, various portable smart devices such as laptops, tablet PCs, smartphones, and smartwatches are widely used. These smart devices generally possess not only image display capabilities but also data generation capabilities in various ways. To this end, smart devices may be equipped with light sensors that detect light. For example, light sensors may include Charge Coupled Devices (CCDs), cameras, and infrared sensors.
[0004] Since the display panel includes signal wiring or electrode patterns of a light-blocking material, the light sensor may be placed on the display panel based on the direction in which light is emitted from the display panel to prevent light directed toward the light sensor from being reflected or absorbed by the display panel. In this case, there is a problem in that the bezel width of the display panel increases due to the area where the light sensor is placed, or a problem in that the image display function cannot be performed because a portion of the display area of the display panel that overlaps with the light sensor is obscured by the light sensor.
[0005] To resolve this, a light sensor is placed below the display panel, and to transmit light to the light sensor placed below the display panel, a structure is proposed in which a pixel area for image display and a pixel area for light transmission are mixed in a portion of the display panel that overlaps with the light sensor (hereinafter referred to as the "light sensor area").
[0006] In this case, there is the advantage that the bezel width of the display panel is not increased due to the placement of the light sensor, and the advantage that an image can be displayed across the entire display area regardless of the placement of the light sensor. The problem to be solved
[0008] Meanwhile, the light sensor area within the display area that overlaps with the light sensor includes a light-transmitting pixel area for transmitting light toward the light sensor; consequently, it has a lower resolution than the remaining area excluding the light sensor area, i.e., the general area that does not overlap with the light sensor. Consequently, there is a problem in that the light sensor area may be perceived differently from the general area.
[0009] To reduce the difference in brightness between the optical sensor area and the general area caused by the difference in resolution between the two, the light-emitting element in the optical sensor area may be driven at a higher brightness than the light-emitting element in the general area. In this case, there is a problem in that the lifespan of the light-emitting element in the optical sensor area decreases rapidly compared to that of the light-emitting element in the general area due to the high-brightness driving.
[0010] Accordingly, the present invention aims to provide a display panel that prevents a difference in brightness between a light sensor area and a general area, while allowing the lifespan of a light-emitting element in the light sensor area to be similar to that of a light-emitting element in the general area, a display device including the same, and a method for manufacturing the same.
[0011] The objects of the present invention are not limited to those mentioned above, and other unmentioned objects and advantages of the present invention may be understood from the following description and will be more clearly understood by the embodiments of the present invention. Furthermore, it will be readily apparent that the objects and advantages of the present invention can be realized by the means and combinations thereof set forth in the claims. means of solving the problem
[0013] One example of the present invention provides a display panel in which a portion of the display area in which an image is displayed is a photosensor area that overlaps with a photosensor and the other remaining portion is a general area that does not overlap with a photosensor, and the display area includes a plurality of subpixel areas disposed in the general area and the photosensor area, and a plurality of light-transmitting pixel areas disposed in the photosensor area, wherein the display panel includes a general light-emitting element that corresponds to the subpixel area of the general area and includes a main light-emitting layer between a first and a second electrode, and a multi-light-emitting element that corresponds to the subpixel area of the photosensor area and includes a main light-emitting layer and a sub-light-emitting layer disposed between the first and a second electrode.
[0014] In this way, the optical sensor area superimposed on the optical sensor includes a plurality of subpixel areas and a plurality of light-transmitting pixel areas alternately arranged with the plurality of subpixel areas, thereby allowing light directed toward the optical sensor to be transmitted while emitting light for image display. As a result, an image can be displayed across the entire display area.
[0015] While the general light-emitting device in the general area has a single-stack structure including a main light-emitting layer, the multi-light-emitting device in the photosensor area has a multi-stack structure including additional sub-light-emitting layers. As a result, at a predetermined current density, the multi-light-emitting device in the photosensor area can emit light of higher brightness than the general light-emitting device in the general area.
[0016] Thus, there is an advantage in that the difference in brightness between the optical sensor area and the general area caused by the difference in resolution between the optical sensor area and the general area can be reduced.
[0017] In addition, there is an advantage that the lifespan of the multiple light-emitting elements in the photosensor area can be similar to that of the general light-emitting elements in the general area.
[0018] A standard light-emitting device may further include a thickness control layer. Due to this thickness control layer, the thickness difference between a standard light-emitting device with a single-stack structure and a multi-light-emitting device with a multi-stack structure can be mitigated. This offers the advantage that even if the standard light-emitting device and the multi-light-emitting device are composed of different structures, they can possess the same microcavity effect. Effects of the invention
[0020] A display panel according to one embodiment of the present invention includes a general light-emitting element corresponding to each subpixel area of a general area that does not overlap with a light sensor, and a multiple light-emitting element corresponding to each subpixel area of a light sensor area that overlaps with a light sensor. Here, the general light-emitting element is a single stack structure including a main light-emitting layer, and the multiple light-emitting element is a multiple stack structure including a sub-light-emitting layer in addition to the main light-emitting layer.
[0021] A multi-light-emitting device can emit light of higher brightness than a general light-emitting device at a given current density.
[0022] Due to these multiple light-emitting elements, the difference in brightness between the light sensor area and the general area caused by the difference in resolution between the light sensor area and the general area can be mitigated, thereby preventing the light sensor area from being perceived differently from the general area.
[0023] In addition, each subpixel area of the optical sensor area can emit light with higher brightness than each subpixel area of the general area, while the lifespan of the multiple light-emitting device can be similar to that of the general light-emitting device. Brief explanation of the drawing
[0025] FIG. 1 is an example of a front surface of a display device according to an embodiment of the present invention. FIG. 2 is a drawing showing a display device according to an embodiment of the present invention. FIG. 3 is an example of an equivalent circuit corresponding to one of the subpixel areas of the display area of FIG. 2. FIG. 4 is a drawing showing a display panel and a light sensor in a display device according to one embodiment of the present invention. Figure 5 is a drawing showing an example of a part of the general area of Figure 4. Figure 6 is a diagram showing A-A' of Figure 5. Figures 7 and 8 are examples of parts of the optical sensor area of Figure 4. Figure 9 is a diagram showing B-B' of Figure 7. Figure 10 is a diagram showing C-C' of Figure 7. FIG. 11 is a diagram showing multiple light-emitting elements corresponding to each color subpixel area shown in FIG. 9 and FIG. 10. FIG. 12 is a diagram showing a general light-emitting element corresponding to each color subpixel area shown in FIG. 6. FIG. 13 is a diagram showing the difference in the lifespan of a light-emitting element in a comparative example in which the light-emitting element in the photosensor area is provided with the same structure as the light-emitting element in the general area. Figure 14 is a diagram showing the driving density and luminance characteristics of a general light-emitting element and a multiple light-emitting element, respectively. Figure 15 is a diagram showing the lifespan characteristics of a general light-emitting element and a multi-light-emitting element, respectively. FIG. 16 is a drawing showing a method for manufacturing a display panel according to one embodiment of the present invention. FIGS. 17 to 29 are process diagrams showing some of the steps illustrated in FIG. 16. Specific details for implementing the invention
[0026] The aforementioned objectives, features, and advantages are described in detail below with reference to the attached drawings, thereby enabling those skilled in the art to easily implement the technical concept of the present invention. In describing the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such descriptions would unnecessarily obscure the essence of the invention. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the attached drawings. In the drawings, the same reference numerals are used to indicate the same or similar components.
[0027] In addition, where it is stated that one component is "connected," "combined," or "connected" to another component, it should be understood that while the components may be directly connected or connected to each other, another component may be "interposed" between each component, or each component may be "connected," "combined," or "connected" through another component.
[0028] Hereinafter, a display device and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the attached drawings.
[0030] First, a display device according to an embodiment of the present invention will be described with reference to FIGS. 1, 2, and 3.
[0031] FIG. 1 is an example of a front surface of a display device according to an embodiment of the present invention. FIG. 2 is a drawing showing a display device according to an embodiment of the present invention. FIG. 3 is an example of an equivalent circuit corresponding to a subpixel area of any one of the display areas of FIG. 2.
[0032] As illustrated in FIG. 1, a display device (10) according to one embodiment of the present invention may be provided as a smart device such as a smartwatch, a smartphone, and a tablet PC. The display device (10) includes a display panel (not shown) including a display area (AA; Active Area) for an image display function and a light sensor (not shown) for an imaging function.
[0033] The display panel can be placed on the front of the display device (10).
[0034] Also, a light sensor (not shown) is placed below the display panel and is an optical element that detects light transmitted through the display panel.
[0035] The photosensor may include an optical element that generates an electrical signal corresponding to the amount of light reflected by a target object. As an example, the photosensor may be any one of a camera, a CCD (Charge Coupled Device), and an infrared sensor.
[0036] For ease of explanation below, the light sensor is assumed to be a camera that generates a digital image signal of an object placed in front of the display device (10).
[0037] A portion (SA) of the display area (AA) of the display panel (not shown) overlaps with a light sensor (not shown) placed below the display panel.
[0038] That is, a portion of the display area (AA) is a light sensing area (SA) that overlaps with the light sensor, and the remaining portion of the display area (AA), excluding the light sensing area (SA), is a general area (GA) that does not overlap with the light sensor (not shown).
[0039] The display area (AA) of the display panel (not shown) includes a plurality of subpixel areas (SPA in FIG. 2) that are arranged in a general area (GA) and a light sensor area (SA) and emit light for image display, and a plurality of light-transmitting pixel areas (TPA in FIG. 7 and FIG. 8) that are arranged alternately with the subpixel areas (SPA) of the light sensor area (SA) and transmit light.
[0040] That is, in the light sensor area (SA), one or more subpixel areas (SPA) and one or more light-transmitting pixel areas (TPA) are arranged alternately in each direction.
[0041] This optical sensor area (SA) can implement an image display function while also transmitting light toward the optical sensor.
[0042] As the light sensor area (SA) includes the light-transmitting pixel area, the subpixel area (SPA) of the light sensor area (SA) is arranged at a lower resolution than the subpixel area (SPA) of the general area (GA). Due to this difference in resolution, the light sensor area (SA) may be perceived differently from the general area (GA).
[0043] To prevent this, according to one embodiment of the present invention, a light-emitting element corresponding to each subpixel area (SPA) of the optical sensor area (SA) emits light of higher brightness than a light-emitting element corresponding to each subpixel area (SPA) of the general area (GA).
[0044] Meanwhile, the lifespan of the light-emitting element decreases based on the driving time and driving intensity. Accordingly, when the light-emitting element in the photosensor area (SA) is supplied with a relatively high driving current to display light of higher brightness than the light-emitting element in the general area (GA), the lifespan of the light-emitting element in the photosensor area (SA) decreases rapidly compared to the lifespan of the light-emitting element in the general area (GA).
[0045] To prevent this, according to one embodiment of the present invention, the light-emitting element of the photosensor region (SA) is formed with a multi-stack structure including a plurality of light-emitting layers, unlike the light-emitting element of the general region (GA).
[0046] In this way, the brightness of the light emitted by the light-emitting element in the photosensor region (SA) based on a predetermined driving current can be higher than that of the light-emitting element in the general region (GA). As a result, the light-emitting element in the photosensor region (SA) can emit light with a higher brightness than the light-emitting element in the general region (GA), while having a lifespan similar to that of the light-emitting element in the general region (GA).
[0047] The light-emitting elements placed in each of these general area (GA) and photosensor area (SA) will be explained in more detail below.
[0049] As illustrated in FIG. 2, the display device (10) includes a display panel (100) including a display area (AA) and a panel driving unit (11, 12, 13) for supplying a driving signal to the display panel (100).
[0050] The display panel (100) includes a display area (10) where an image is output, and a plurality of sub-pixel areas (SPA; Sub-Pixel Area) arranged side by side in the display area (10) and each outputting light for image display.
[0051] Each of the multiple subpixel regions (SPA) emits light in a wavelength range corresponding to any one of multiple different colors. Here, the multiple colors may include red, green, and blue.
[0052] The display panel (100) further includes signal lines (GL, DL) connected to a plurality of subpixel areas (SPA). The signal lines (GL, DL) transmit driving signals of the panel driving unit (11, 12, 13) to each subpixel area (SPA). For example, the display panel (100) may include a gate line (GL) that supplies a scan signal (SCAN) and a data line (DL) that supplies a data signal (VDATA).
[0053] Additionally, the display panel (100) may further include first and second driving power lines that transmit first and second driving power supplies (VDD, VSS) for driving a light-emitting element corresponding to each subpixel area.
[0054] The panel driving unit of the display device (10) may include a gate driving unit (11) connected to a gate line (GL) of the display panel (100), a data driving unit (12) connected to a data line (DL) of the display panel (100), and a timing controller (13) that controls the driving timing of each of the gate driving unit (11) and the data driving unit (12).
[0055] The timing controller (13) rearranges digital video data (RGB) input from the outside to match the resolution of the display panel (100) and supplies the rearranged digital video data (RGB') to the data driving unit (12).
[0056] The timing controller (13) supplies a data control signal (DDC) for controlling the operation timing of the data driver (12) and a gate control signal (GDC) for controlling the operation timing of the gate driver (11) based on timing signals such as a vertical synchronization signal (Vsync), a horizontal synchronization signal (Hsync), a dot clock signal (DCLK), and a data enable signal (DE).
[0057] The gate driving unit (11) sequentially supplies scan signals (SCAN) to a plurality of gate lines (GL) during a single frame period for image display based on a gate control signal (GDC). That is, the gate driving unit (11) supplies scan signals (SCAN) to each gate line (GL) during each horizontal period corresponding to each gate line (GL) during a single frame period. Here, the gate lines (GL) may correspond to subpixel regions (SPA) arranged side by side in the horizontal direction among a plurality of subpixel regions (SPA).
[0058] The data driver (12) converts the reordered digital video data (RGB') into an analog data voltage based on the data control signal (DDC). Based on the reordered digital video data (RGB'), the data driver (12) supplies a data signal (VDATA) corresponding to each subpixel area (SPA) corresponding to each gate line (GL) to the data line (DL) during each horizontal period.
[0059] As shown in FIG. 3, each subpixel area (SPA) includes a light-emitting element (OLED) and a pixel driving circuit (PDC) for supplying a driving signal to the light-emitting element (OLED).
[0060] For example, a pixel driving circuit (PDC) may include a driving transistor (DT), a switching transistor (ST), and a storage capacitor (Cst).
[0061] In addition, although not shown in FIG. 3, each subpixel area (SPA) may further include a compensation circuit (not shown) for compensating for the degradation of at least one of the driving thin-film transistor (DT) or the light-emitting element (OLED) of the pixel driving circuit (PDC). The compensation circuit may include at least one transistor (not shown) for detecting the degree of degradation or supplying a reference power source (not shown).
[0062] A driving transistor (DT) is placed in series with a light-emitting element (OLED) between a first driving power line (VDDL) that supplies a first driving power (VDD) and a second driving power line (VSSL) that supplies a second driving power (VSS) with a potential lower than that of the first driving power (VDD).
[0063] That is, one end of the driving transistor (DT) is connected to the first driving power line (VDDL), and the other end of the driving transistor (DT) is connected to one end of the light-emitting element (OLED). And, the other end of the light-emitting element (OLED) is connected to the second driving power line (VSSL).
[0064] A switching transistor (ST) is placed between the gate electrode of a driving transistor (DT) and a data line (DL) that supplies a data signal (VDATA) of each subpixel area (SPA). The switching transistor (ST) is turned on based on a scan signal (SCAN) from the gate line (GL).
[0065] A storage capacitor (Cst) is placed between the gate electrode of the driving transistor (DT) and the other end of the driving transistor (DT). Here, the other end of the driving transistor (DT) is connected to one end of the light-emitting element (OLED).
[0066] The operation of this pixel driving circuit (PDC) is as follows.
[0067] The switching transistor (ST) is turned on based on the scan signal (SCAN) of the gate line (GL). At this time, the data signal (VDATA) of the data line (DL) is supplied to the gate electrode of the driving thin-film transistor (DT) and the storage capacitor (Cst) through the turned-on switching transistor (ST).
[0068] The storage capacitor (Cst) is charged by the data signal (VDATA).
[0069] And, the driving transistor (DT) is turned on based on the data signal (VDATA) and the charging voltage of the storage capacitor (Cst), thereby generating a driving current corresponding to the data signal (VDATA). Thus, the driving current from the turned-on driving transistor (DT) can be supplied to the light-emitting element (OLED).
[0071] Next, a display panel (100) of a display device (10) according to one embodiment of the present invention will be described.
[0072] FIG. 4 is a drawing showing a display panel and a light sensor in a display device according to one embodiment of the present invention.
[0073] As illustrated in FIG. 4, a display device (10) according to one embodiment of the present invention includes a display panel (100) including a display area (AA) on which an image is output, and a light sensor (200) disposed below the display panel (100) and superimposed on a part of the display area (AA).
[0074] Here, the light sensor (200) is positioned below the display panel (100) based on the direction in which light (LIGHT) from the display panel (100) for image display is emitted.
[0075] The display area (AA) includes a light sensor area (SA) that overlaps with a light sensor (200) placed below the display panel (100), and a general area (GA) that is the remainder excluding the light sensor area (SA).
[0076] In addition, a plurality of subpixel areas (SPA) that output light for image display are arranged in the light sensor area (SA) and general area (GA) of the display area (AA).
[0077] For example, a display panel (100) may include a support substrate (101) including a display area (AA), a transistor array (102) disposed on the support substrate (101) and including a pixel driving circuit (PDC of FIG. 3) corresponding to each of a plurality of subpixel areas (SPA), a light-emitting array (103) disposed on the transistor array (102) and including a light-emitting element (OLED) corresponding to each of a plurality of subpixel areas (SPA), and a sealing film (104) bonded to the support substrate (101) and sealing the light-emitting array (103).
[0078] According to the city of Fig. 4, light (LIGHT) from the light-emitting array (103) for image display is emitted through the encapsulation film (104), and the light sensor (200) is positioned to face the support substrate (101).
[0079] However, this is merely an example, and in a display device (10) according to one embodiment of the present invention, when light (LIGHT) of a light-emitting array (103) for image display is emitted through a support substrate (101), a light sensor (200) may be positioned to face a sealing film (104).
[0081] FIG. 5 is a drawing showing an example of a part of the general area of FIG. 4. FIG. 6 is a drawing showing A-A' of FIG. 5.
[0082] As shown in FIG. 5, in the general area (GA) of the display area (AA) that does not overlap with the light sensor (200), a plurality of subpixel areas (G_SPA) are arranged side by side.
[0083] Each of the multiple subpixel regions (G_SPA) corresponds to any one of the first, second, and third colors.
[0084] That is, the plurality of subpixel regions (G_SPA) includes a first subpixel region (G_SPA1) corresponding to a first color, a second subpixel region (G_SPA2) corresponding to a second color, and a third subpixel region (G_SPA3) corresponding to a third color.
[0085] Here, the third color is a wavelength range shorter than the first and second colors, and the second color is a wavelength range shorter than the first color. For example, the first color may be red, the second color may be green, and the third color may be blue.
[0086] As shown in Fig. 5, each of the first, second, and third subpixel regions (G_SPA1, G_SPA2, G_SPA3) included in the general region (GA) can be arranged side by side in the Y direction.
[0087] The first subpixel area (G_SPA1) and the third subpixel area (G_SPA3) included in the general area (GA) can be arranged alternately in the X direction.
[0088] And, the second subpixel area (G_SPA2) included in the general area (GA) can be arranged parallel in the X direction.
[0089] In addition, among the multiple subpixel regions (G_SPA), mutually adjacent first subpixel region (G_SPA1), second subpixel region (G_SPA2), and third subpixel region (G_SPA3) can form a unit pixel region (G_UPA) that displays various colors through the mixing of the first, second, and third colors.
[0090] For example, each unit pixel area (G_UPA) of a general area (GA) may consist of first and third subpixel areas (G_SPA1, G_SPA3) adjacent to each other in the X direction and two second subpixel areas (G_SPA2) adjacent to them in the Y direction.
[0091] In addition, considering the luminance characteristics of each color light-emitting element and the ease of implementing white, it is obvious that the size of each of the first, second, and third subpixel areas (G_SPA1, G_SPA2, G_SPA3) included in the general area (GA) can be determined in various ways. For example, as shown in FIG. 5, among the first, second, and third subpixel areas (G_SPA1, G_SPA2, G_SPA3) included in the general area (GA), the third subpixel area (G_SPA3) may be the largest in size. Also, among the first, second, and third subpixel areas (G_SPA1, G_SPA2, G_SPA3) included in the general area (GA), the second subpixel area (G_SPA2) may be the smallest in size.
[0092] However, the arrangement of the first, second, and third subpixel areas (G_SPA1, G_SPA2, G_SPA3) of the general area (GA) shown in FIG. 5 is merely an example, and according to one embodiment of the present invention, considering the easy implementation of the unit pixel area (G_UPA), it is obvious that the arrangement of the first, second, and third subpixel areas (G_SPA1, G_SPA2, G_SPA3) included in the general area (GA) can vary in various ways.
[0094] As illustrated in FIG. 6, a display panel (100) according to one embodiment of the present invention includes general light-emitting elements (ED11, ED12, ED13) corresponding to each of a plurality of subpixel areas (G_SPA) included in a general area (GA).
[0095] Specifically, the display panel (100) includes a support substrate (101), a transistor array (102) disposed on the support substrate (101), a light-emitting array (103) disposed on the transistor array (102), and a sealing layer (104) disposed on the light-emitting array (103).
[0096] The transistor array (102) includes a pixel driving circuit (PDC) corresponding to each of a plurality of subpixel regions (G_SPA). For example, as shown in FIG. 3, the pixel driving circuit (PDC) may include a driving transistor (DT) connected to a light-emitting element (OLED), a switching transistor (ST) that is turned on and off based on a scan signal of a gate line (GL) and transmits a data signal (VDATA) of a data line (DL) to the gate electrode of the driving transistor (DT), and a storage capacitor (Cst) connected to the gate electrode of the driving transistor (DT).
[0097] And, the transistor array (102) may further include a flattening film (1021) that flatly covers the pixel driving circuit (PDC).
[0098] The light-emitting array (103) can be placed on the flattening film (1021) of the transistor array (102).
[0099] The light-emitting array (103) includes general light-emitting elements (ED11, ED12, ED13) corresponding to each of the plurality of subpixel regions (G_SPA).
[0100] Specifically, the light-emitting array (103) may include a first electrode (210) disposed on a planarization film (1021) and corresponding to each subpixel region (G_SPA), a bank (1031) disposed on the planarization film (1021) and corresponding to the outer edge of each subpixel region (G_SPA) and covering the edge of the first electrode (210), a light-emitting structure (230) disposed on the first electrode (210) and corresponding to each subpixel region (G_SPA), and a second electrode (220) disposed on the bank (1031) and the light-emitting structure (230).
[0101] Additionally, the light-emitting array (103) may further include a first protective film (1032) covering the second electrode (220) and a second protective film (1033) covering the first protective film (1032) flatly.
[0102] FIG. 6 illustrates the first and second protective films (1032, 1033) as single layers, but this is merely an example, and at least one of the first and second protective films (1032, 1033) may be a structure in which two or more insulating layers made of different materials or different thicknesses are laminated.
[0103] Due to these first and second protective layers (1032, 133), the penetration of moisture or oxygen into the light-emitting structure (230) may not be facilitated, and the influence of foreign substances may be reduced.
[0104] A general light-emitting element (ED11, ED12, ED13) corresponding to each subpixel area (G_SPA) included in a general area (GA) includes mutually opposing first and second electrodes (210, 220) and a light-emitting structure (230) disposed between the first and second electrodes (210, 220). And, the light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13) includes a main light-emitting layer (231).
[0105] That is, each general light-emitting element (ED11, ED12, ED13) corresponding to each subpixel area (G_SPA) included in the general area (GA) includes mutually opposing first and second electrodes (210, 220) and a main light-emitting layer (231) disposed between the first and second electrodes (210, 220).
[0106] As previously mentioned, a plurality of subpixel areas (G_SPA1, G_SPA2, G_SPA3) included in the general area (GA) include a first subpixel area (G_SPA1) corresponding to a first color, a second subpixel area (G_SPA2) corresponding to a second color, and a third subpixel area (G_SPA3) corresponding to a third color.
[0107] The main light-emitting layer (231) of the first general light-emitting element (ED11) corresponding to the first subpixel area (G_SPA1) of the general area (GA) may include a first light-emitting material corresponding to the first color. Thus, the first general light-emitting element (ED11) can emit the first color based on the driving current supplied to the first and second electrodes (210, 220).
[0108] The main light-emitting layer (231) of the second general light-emitting element (ED12) corresponding to the second subpixel area (G_SPA2) of the general area (GA) may include a second light-emitting material corresponding to the second color. Thus, the second general light-emitting element (ED12) can emit the second color based on the driving current supplied to the first and second electrodes (210, 220).
[0109] The main light-emitting layer (231) of the third general light-emitting element (ED12) corresponding to the third subpixel area (G_SPA3) of the general area (GA) may include a third light-emitting material corresponding to the third color. Thus, the third general light-emitting element (ED13) can emit the third color based on the driving current supplied to the first and second electrodes (210, 220).
[0110] The light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13) corresponding to each subpixel area (G_SPA) of the general area (GA) further includes a first hole transport layer (233) disposed between the first electrode (210) and the main light-emitting layer (231), and a first electron transport layer (234) disposed between the second electrode (220) and the main light-emitting layer (231).
[0111] The light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13) may further include a hole injection layer (233') disposed between the first electrode (210) and the first hole transport layer (233).
[0112] In addition, the light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13) further includes a thickness control layer (236) disposed between the first hole transport layer (233) and the main light-emitting layer (231). This thickness control layer (236) will be described in detail below.
[0113] In addition, the first and second general light-emitting elements (EM11, EM12) placed in the first and second subpixel regions (G_SPA1, G_SPA2) corresponding to the first and second colors, which are relatively long wavelength regions, further include a color control layer (237) placed below the main light-emitting layer (231).
[0114] Due to the color control layer (237), the light-emitting structure (230) of the first and second general light-emitting elements (EM11, EM12) can be formed with a thickness corresponding to the wavelength range of the first and second colors. Thus, the brightness of each color can be improved according to the influence of the microcavity effect.
[0115] The main light-emitting layer (231) of these general light-emitting elements (ED11, ED12, ED13) can emit light by electron-hole pairs formed by the combination of electrons transferred from the first electron transport layer (234) and holes transferred from the first hole transport layer (233) and the thickness control layer (237).
[0117] FIGS. 7 and FIGS. 8 are examples of parts of the optical sensor area of FIG. 4. FIG. 9 is a diagram showing B-B' of FIG. 7. FIG. 10 is a diagram showing C-C' of FIG. 7.
[0118] As shown in FIG. 7, in the optical sensor area (SA) that overlaps with the optical sensor (200) in the display area (AA), a plurality of subpixel areas (S_SPA) and a plurality of light-transmitting pixel areas (TSA) are alternately arranged side by side.
[0119] For example, assuming that each subpixel area (S_SPA) and light-transmitting pixel area (TSA) in the light sensor area (SA) are of the same size, a column in the X direction (the first horizontal line in FIG. 7) in which the first and second subpixel areas (S_SPA1, S_SPA2) and two light-transmitting pixel areas (TSA) are alternately arranged, a column in the X direction (the second horizontal line in FIG. 7) in which the light-transmitting pixel areas (TSA) are arranged side by side, a column in the X direction in which the second and third subpixel areas (S_SPA2, S_SPA3) and two light-transmitting pixel areas (TSA) are alternately arranged (the third horizontal line in FIG. 7), and a column in the X direction in which the light-transmitting pixel areas (TSA) are arranged side by side (the fourth horizontal line in FIG. 7) may be repeatedly arranged along the Y direction. Here, the subpixel regions (S_SPA) placed in each row in the Y direction correspond to mutually identical colors and can be spaced apart with three light-transmitting pixel regions (TSA) in between.
[0120] In this case, the unit pixel area (S_UPA) that implements various colors may consist of first and third subpixel areas (S_SPA1, S_SPA3) spaced apart by a single light-transmitting pixel area (TSA) in a diagonal direction oblique to the X and Y directions, and two second subpixel areas (S_SPA2) adjacent to each of them in the X direction.
[0121] Thus, for each reference area (BA) which can be defined as 16 pixel areas (U_SPA, TSA) including first and third subpixel areas (S_SPA1, S_SPA3), two second subpixel areas (S_SPA2), and twelve light-transmitting pixel areas (TSA) arranged around them, each unit pixel area (S_UPA) can be derived.
[0122] Therefore, assuming that the subpixel area (S_SPA) of the optical sensor area (SA) is twice the size of the subpixel area (G_SPA) of the general area (GA) (G_SPA in Fig. 5) and that the aperture ratio of the general area (GA) is 100%, the aperture ratio of the optical sensor area (SA) can be derived as 50% (= (4 / 16) * 2). Here, the aperture ratio corresponds to the ratio of the light-emitting area within a specific area, that is, the ratio of the area allocated to subpixel areas within a specific area.
[0123] In this case, to reduce the difference in visibility between the optical sensor area (SA) and the general area (GA), the multiple light-emitting elements (ED21, ED22, ED23) placed in each subpixel area (S_SPA) included in the optical sensor area (SA) need to display about twice the brightness of the general light-emitting elements (ED11, ED12, ED13) of the general area (GA).
[0125] Alternatively, as shown in FIG. 8, each unit pixel area (S_UPA') included in the light sensor area (SA) may be identical to the unit pixel area (G_UPA) of the general area (GA), except for the point adjacent to the surrounding light-transmitting pixel area (TA).
[0126] That is, just as in the general area (GA), each unit pixel area (S_UPA') of the optical sensor area (SA) may consist of first and third subpixel areas (S_SPA1, S_SPA3) adjacent to each other in the X direction and two second subpixel areas (S_SPA2) adjacent to them in the Y direction.
[0127] When the aperture ratio of the optical sensor area (SA) is 50%, the light-transmitting pixel area (TPA') in the optical sensor area (SA) has a size corresponding to the unit pixel area (S_UPA') and can be alternately arranged with the unit pixel area (S_UPA') in the X direction and Y direction, respectively.
[0128] However, the arrangement of the subpixel area (S_SPA) and the light-transmitting pixel area (TSA) of the optical sensor area (SA) shown in FIGS. 7 and 8 is merely an example, and according to one embodiment of the present invention, the arrangement of the subpixel area (S_SPA) and the light-transmitting pixel area (TSA) of the optical sensor area (SA) can be varied in various ways considering the aperture ratio of the optical sensor area (SA) and the implementation of the unit pixel area (S_UPA, S_UPA').
[0130] As illustrated in FIGS. 9 and 10, a display panel (100) according to one embodiment of the present invention includes multiple light-emitting elements (ED21, ED22, ED23) corresponding to each of a plurality of subpixel areas (S_SPA) included in a light sensor area (SA).
[0131] The light sensor area (SA) of the display panel (100) is identical to the general area (GA) of the display panel (100) except that it includes multiple light-emitting elements (ED21, ED22, ED23), so a redundant description is omitted below.
[0132] Each multi-light-emitting element (ED21, ED22, ED23) corresponding to each subpixel area (S_SPA) included in the optical sensor area (SA) includes mutually opposing first and second electrodes (210, 220) and a light-emitting structure (230') disposed between the first and second electrodes (210, 220), and the light-emitting structure (230') includes a main light-emitting layer (231) and a sub-light-emitting layer (232).
[0133] That is, the multiple light-emitting elements (ED21, ED22, ED23) corresponding to each subpixel area (S_SPA) included in the optical sensor area (SA) include mutually opposing first and second electrodes (210, 220), a main light-emitting layer (231) disposed between the first and second electrodes (210, 220), and a sub-light-emitting layer (232) disposed between the first electrode (210) and the main light-emitting layer (231).
[0134] Here, the sub-emissive layer (232) includes the same light-emitting material as the main emissive layer (231).
[0135] Specifically, a plurality of subpixel regions (S_SPA1, S_SPA2, S_SPA3) included in the optical sensor region (SA) include a first subpixel region (S_SPA1) corresponding to a first color, a second subpixel region (S_SPA2) corresponding to a second color, and a third subpixel region (S_SPA3) corresponding to a third color.
[0136] Each of the main light-emitting layer (231) and the sub-light-emitting layer (232) of the first multi-light-emitting element (ED21) corresponding to the first sub-pixel area (S_SPA1) of the optical sensor area (SA) may include a first light-emitting material corresponding to a first color. Thus, the first multi-light-emitting element (ED21) can emit a first color based on the driving current supplied to the first and second electrodes (210, 220).
[0137] Each of the main light-emitting layer (231) and the sub-light-emitting layer (232) of the second multi-light-emitting element (ED22) corresponding to the second sub-pixel area (S_SPA2) of the optical sensor area (SA) may include a second light-emitting material corresponding to the second color. Thus, the second multi-light-emitting element (ED22) can emit the second color based on the driving current supplied to the first and second electrodes (210, 220).
[0138] Each of the main light-emitting layer (231) and the sub-light-emitting layer (232) of the third multi-light-emitting element (ED23) corresponding to the third sub-pixel area (S_SPA3) of the optical sensor area (SA) may include a third light-emitting material corresponding to the third color. Thus, the third multi-light-emitting element (ED23) can emit the third color based on the driving current supplied to the first and second electrodes (210, 220).
[0139] Similar to the light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13), the light-emitting structure (230') of the multiple light-emitting element (ED21, ED22, ED23) of the photosensor region (SA) further includes a first hole transport layer (233) disposed between the first electrode (210) and the main light-emitting layer (231), and a first electron transport layer (234) disposed between the second electrode (220) and the main light-emitting layer (231).
[0140] The light-emitting structure (230') of the multiple light-emitting elements (ED21, ED22, ED23) may further include a hole injection layer (233') disposed between the first electrode (210) and the first hole transport layer (233).
[0141] The light-emitting structure (230') of the multiple light-emitting elements (ED21, ED22, ED23) corresponding to each subpixel area (S_SPA) of the light sensor area (SA) further includes a second electron transport layer (2351), a charge generation layer (2352), and a second hole transport layer (2353) disposed between the sub-light-emitting layer (232) and the main light-emitting layer (231).
[0142] The charge generation layer (2352) supplies holes to the second hole transport layer (2353) adjacent to the main light-emitting layer (231) in place of the first electrode (210), and supplies electrons to the second electron transport layer (2351) adjacent to the sub-light-emitting layer (232) in place of the second electrode (220).
[0143] Similar to the first and second general light-emitting elements (EM11, EM12), the first and second multi-light-emitting elements (EM21, EM22) of the first and second subpixel regions (S_SPA1, S_SPA2) corresponding to the first and second colors in the relatively long wavelength region further include a color control layer (237) disposed below the main light-emitting layer (231).
[0144] Due to the color control layer (237), the light-emitting structure (230) of the first and second multi-light-emitting elements (EM21, EM22) can be formed with a thickness corresponding to the wavelength range of the first and second colors. Thus, the brightness of each color can be enhanced according to the influence of the micro-cavity effect.
[0145] The main light-emitting layer (231) of these multiple light-emitting elements (ED21, ED22, ED23) can emit light through electron-hole pairs formed by the combination of electrons transferred from the first electron transport layer (234) and holes transferred from the charge generation layer (2352) and the second hole transport layer (2353), etc.
[0146] And, the sub-emissive layer (232) of the multiple light-emitting elements (ED21, ED22, ED23) can emit light by electron-hole pairs formed by the combination of electrons transferred from the charge generation layer (2352) and the second electron transport layer (2351) and holes transferred from the first hole transport layer (233).
[0148] FIG. 11 is a diagram showing multiple light-emitting elements corresponding to each color subpixel area shown in FIG. 9 and FIG. 10. FIG. 12 is a diagram showing a general light-emitting element corresponding to each color subpixel area shown in FIG. 6.
[0149] As illustrated in FIG. 11, a multi-light-emitting element (ED21, ED22, ED23) corresponding to each sub-pixel area (S_SPA) of a light sensor area (SA) comprises mutually opposing first and second electrodes (210, 220), a main light-emitting layer (231) disposed between the first and second electrodes (210, 220), and a sub-light-emitting layer (232) disposed between the first electrode (210) and the main light-emitting layer (231). That is, the multi-light-emitting element (ED21, ED22, ED23) is formed as a multi-stack structure including a main light-emitting layer (231) and a sub-light-emitting layer (232).
[0150] Here, the main light-emitting layer (231) and the sub-light-emitting layer (232) include a light-emitting material of the same color.
[0151] That is, the first multi-luminescent element (ED21) placed in the first sub-pixel area (S_SPA1) of the first color included in the light sensor area (SA) may include a main light-emitting layer (231) and a sub-luminescent layer (232), each made of a first light-emitting material corresponding to the first color.
[0152] A second multi-light-emitting element (ED22) placed in a second sub-pixel area (S_SPA2) of a second color included in a light sensor area (SA) may include a main light-emitting layer (231) and a sub-light-emitting layer (232), each made of a second light-emitting material corresponding to the second color.
[0153] A third multi-luminescent element (ED23) placed in a third sub-pixel area (S_SPA3) of a third color included in a light sensor area (SA) may include a main light-emitting layer (231) and a sub-luminescent layer (232), each made of a third light-emitting material corresponding to the third color.
[0154] The multiple light-emitting elements (ED21, ED22, ED23) further include a first hole transport layer (233) disposed between the first electrode (210) and the sub-light-emitting layer (232), and a first electron transport layer (234) disposed between the second electrode (220) and the main light-emitting layer (231).
[0155] Additionally, since the multi-light-emitting device (ED21, ED22, ED23) has a multi-stack structure including a main light-emitting layer (231) and a sub-light-emitting layer (232), it further includes a second electron transport layer (2351), a charge generation layer (2352), and a second hole transport layer (2353) disposed between the sub-light-emitting layer (232) and the main light-emitting layer (231). Here, the second hole transport layer (2353) is disposed between the charge generation layer (2352) and the main light-emitting layer (231), and the second electron transport layer (2351) is disposed between the charge generation layer (2352) and the sub-light-emitting layer (232).
[0156] The second electron transport layer (2351) is positioned adjacent to the sub-emissive layer (232) and transfers electrons toward the sub-emissive layer (232).
[0157] The charge generation layer (2352) is positioned between the second electron transport layer (2351) and the second hole transport layer (2353), and transmits electrons toward the second electron transport layer (2351) and blocks electrons toward the second hole transport layer (2353), transmits holes toward the second hole transport layer (2353), and blocks holes toward the second electron transport layer (2351).
[0158] The second hole transport layer (2353) is positioned adjacent to the main light-emitting layer (231) and transmits holes toward the main light-emitting layer (231).
[0159] In order to generate a microcavity effect corresponding to the wavelength range of each color, the first and second multi-light-emitting elements (EM21, EM22) corresponding to the first and second subpixel regions (S_SPA1, S_SPA2) of the first and second colors, which are relatively long wavelength regions of the photosensor region (SA), further include a color control layer (237 in FIG. 9) disposed below the main light-emitting layer (231).
[0160] The color control layer (237) of each of the first and second multi-light-emitting elements (EM21, EM22) is disposed between the main light-emitting layer (231) and the second hole transport layer (2353).
[0161] Accordingly, the color control layer (237) may be made of a hole-transporting material so that the movement of holes transferred from the second hole transport layer (2353) to the main light-emitting layer (231) can be maintained.
[0162] Here, the thickness (2371_th, 2371_th) of the color adjustment layer (237) corresponds to the wavelength range of the color of each subpixel area (S_SPA1, S_SPA2).
[0163] That is, the first multi-emitting element (ED21) corresponding to the first subpixel area (S_SPA1) of the first color included in the light sensor area (SA) includes a first color control layer (2371) made of a first thickness (2371_th).
[0164] When the second color is in a wavelength range shorter than the first color, the second multi-emitting element (ED22) corresponding to the second subpixel area (S_SPA2) of the second color included in the light sensor area (SA) includes a second color control layer (2372) having a second thickness (2372_th) smaller than the first thickness (2371_th).
[0165] In the case where the third color among the first to third colors is the shortest wavelength range, the third multi-light emitting element (ED23) corresponding to the third subpixel area (S_SPA3) of the third color included in the photosensor area (SA) does not include a color control layer (237). Accordingly, the main light emitting layer (231) of the third multi-light emitting element (ED23) is in contact with the second hole transport layer (2353).
[0166] Meanwhile, as illustrated in FIG. 12, a general light-emitting element (ED11, ED12, ED13) corresponding to each subpixel area (G_SPA) of a general area (GA) includes mutually opposing first and second electrodes (210, 220) and a main light-emitting layer (231) disposed between the first and second electrodes (210, 220).
[0167] That is, unlike the multiple light-emitting elements (ED21, ED22, ED23) of the photosensor region (SA), the general light-emitting elements (ED11, ED12, ED13) do not include a sub-light-emitting layer (232) and are formed as a single stack structure including only a main light-emitting layer (231).
[0168] Here, the main light-emitting layer (231) of the general light-emitting element (ED11, ED12, ED13) includes the same light-emitting material as the main light-emitting layer (231) of the multiple light-emitting element (ED21, ED22, ED23) of the photosensor region (SA).
[0169] That is, the main light-emitting layer (231) of the first general light-emitting element (ED11) placed in the first subpixel area (G_SPA1) of the first color included in the general area (GA) may include a first light-emitting material corresponding to the first color.
[0170] The main light-emitting layer (231) of the second general light-emitting element (ED12) placed in the second subpixel area (G_SPA2) of the second color included in the general area (GA) may include a second light-emitting material corresponding to the second color.
[0171] The main light-emitting layer (231) of the third general light-emitting element (ED13) placed in the third subpixel area (G_SPA3) of the third color included in the general area (GA) may include a third light-emitting material corresponding to the third color.
[0172] The general light-emitting element (ED11, ED12, ED13) further includes a first hole transport layer (233) disposed between the first electrode (210) and the main light-emitting layer (231), and a first electron transport layer (234) disposed between the second electrode (220) and the main light-emitting layer (231).
[0173] Additionally, the multi-stack structure multi-light-emitting device (ED21, ED22, ED23) includes a sub-light-emitting layer (232) disposed between the first hole transport layer (233) and the main light-emitting layer (231), a second electron transport layer (2351), a charge generation layer (2352), and a second hole transport layer (2353).
[0174] However, since the general light-emitting element (ED11, ED12, ED13) has a single stack structure, it does not include a sub-light-emitting layer (232), a second electron transport layer (2351), a charge generation layer (2352), and a second hole transport layer (2353). Consequently, if the thickness of the light-emitting structure (230) of the general light-emitting element (ED11, ED12, ED13) becomes smaller than the thickness of the light-emitting structure (230') of the multi-light-emitting element (ED21, ED22, ED23), the microcavity effect occurs differently, and thus the luminance characteristics of the general light-emitting element (ED11, ED12, ED13) may differ from the luminance characteristics of the multi-light-emitting element (ED21, ED22, ED23).
[0175] To prevent this, according to one embodiment of the present invention, the general light-emitting element (ED11, ED12, ED13) further includes a thickness control layer (236) disposed between the first hole transport layer (233) and the main light-emitting layer (231).
[0176] In order to maintain the movement of holes transferred from the first hole transport layer (233) to the main light-emitting layer (231), the thickness control layer (236) may be made of a hole-transporting material.
[0177] This thickness control layer (236) is intended to compensate for the difference in thickness between a single-stack structure general light-emitting element (ED11, ED12, ED13) and a multi-stack structure multi-light-emitting element (ED21, ED22, ED23). Therefore, the thickness (236_th) of the thickness control layer (236) corresponds to the total thickness of the components of the multi-light-emitting element (ED21, ED22, ED23) that are not included in the general light-emitting element (ED11, ED12, ED13).
[0178] That is, the thickness (236_th) of the thickness control layer (236) corresponds to the sum of the thickness of the sub-emissive layer (232) included in the multiple light-emitting elements (ED21, ED22, ED23), the thickness of the second electron transport layer (2351), the thickness of the charge generation layer (2352), and the thickness of the second hole transport layer (2353) (235_th in FIG. 11).
[0179] In other words, the thickness (236_th) of the thickness control layer (236) may be within the same range as the sum of the thickness of the sub-emissive layer (232) included in the multiple light-emitting elements (ED21, ED22, ED23), the thickness of the second electron transport layer (2351), the thickness of the charge generation layer (2352), and the thickness of the second hole transport layer (2353) (235_th in FIG. 11). Here, the same range may include an error of a degree that does not cause a difference in microcavity effects.
[0180] In addition, similar to the first and second multi-luminescent elements (ED21, ED22), the first and second general light-emitting elements (EM11, EM12) corresponding to the first and second subpixel regions (G_SPA1, G_SPA2) of the first and second colors, which are relatively long wavelength regions within the general region (GA), further include a color control layer (237 in FIG. 6) disposed below the main light-emitting layer (231).
[0181] The color control layer (237) of each of the first and second general light-emitting elements (EM11, EM12) is placed between the main light-emitting layer (231) and the thickness control layer (236).
[0182] The color control layer (237) may be made of a hole-transporting material.
[0183] Similar to the first multi-luminescent element (ED21), the first general light-emitting element (ED11) corresponding to the first subpixel area (G_SPA1) of the first color included in the general area (GA) includes a first color control layer (2371) made of a first thickness (2371_th).
[0184] Similar to the second multi-luminescent element (ED22), the second general light-emitting element (ED12) corresponding to the second subpixel area (G_SPA2) of the second color included in the general area (GA) includes a second color control layer (2372) having a second thickness (2372_th) smaller than the first thickness (2371_th).
[0185] In the case where the third color among the first to third colors is the shortest wavelength range, the third general light-emitting element (ED13) corresponding to the third subpixel area (G_SPA3) of the third color included in the general area (GA) does not include a color control layer (237). Accordingly, the main light-emitting layer (231) of the third general light-emitting element (ED13) comes into contact with the thickness control layer (236).
[0186] As described above, the general light-emitting element (ED11, ED12, ED13) does not include the sub-light-emitting layer (232), the second electron transport layer (2351), the charge generation layer (2352), and the second hole transport layer (2353) of the multi-light-emitting element (ED21, ED22, ED23), but instead includes a thickness control layer (236).
[0187] And, each of the first general light-emitting element (ED11) and the first multi-light-emitting element (ED22) corresponding to the first subpixel area (G_SPA1, S_SPA1) includes a color control layer (2371) of a first thickness (2371_th). Accordingly, the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the first general light-emitting element (ED11) (1_th in FIG. 12) can be the same as the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the first multi-light-emitting element (ED21) (1_th in FIG. 11).
[0188] Likewise, the second general light-emitting element (ED12) and the second multi-light-emitting element (ED22) corresponding to the second subpixel area (G_SPA2, S_SPA2) include a color control layer (2372) of a second thickness (2372_th). Accordingly, the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the second general light-emitting element (ED12) (2_th in FIG. 12) can be the same as the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the second multi-light-emitting element (ED22) (2_th in FIG. 11).
[0189] The third general light-emitting element (ED13) and the third multi-light-emitting element (ED23) corresponding to the third subpixel area (G_SPA3, S_SPA3) do not include a color control layer. Accordingly, the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the third general light-emitting element (ED13) (3_th in FIG. 12) can be the same as the gap between the first hole transport layer (233) and the main light-emitting layer (231) in the third multi-light-emitting element (ED23) (3_th in FIG. 11).
[0190] Thus, even if the optical sensor area (SA) includes a light-emitting element with a structure different from that of the general area (GA), the fine cavity effect in the general light-emitting element (ED11, ED12, ED13) and the multiple light-emitting element (ED21, ED22, ED23) can occur equally, so the difference in display quality between the optical sensor area (SA) and the general area (GA) can be mitigated.
[0191] Meanwhile, one embodiment of the present invention illustrates that a multi-light-emitting element (ED21, ED22, ED23) disposed in a light sensor region (SA) includes one sub-light-emitting layer. However, one embodiment of the present invention is not limited thereto, and the multi-light-emitting element (ED21, ED22, ED23) may include two or more sub-light-emitting layers. In this case, the multi-light-emitting element (ED21, ED22, ED23) may further include an electron transport layer, a charge generation layer, and a hole transport layer disposed between any two sub-light-emitting layers. And, the thickness (236_th) of the thickness control layer (236) of the general light-emitting element (ED11, ED12, ED13) corresponds to the total thickness of the components of the multi-light-emitting element (ED21, ED22, ED23) that are not included in the general light-emitting element (ED11, ED12, ED13).
[0193] FIG. 13 is a diagram showing the difference in the lifespan of a light-emitting element in a comparative example in which the light-emitting element in the photosensor area is provided with the same structure as the light-emitting element in the general area.
[0194] As previously mentioned, the optical sensor area (SA), including the light-transmitting pixel area (TSA), has a lower aperture ratio than the general area (GA). Therefore, to prevent the optical sensor area (SA) from appearing different from the general area (GA), the light-emitting element in the optical sensor area (SA) must display a higher brightness than the light-emitting element in the general area (GA).
[0195] If the light-emitting element in the photosensor area (SA) is formed with a single stack structure identical to that of the light-emitting element in the general area (GA), the lifespan of the light-emitting element in the photosensor area (SA) decreases rapidly compared to that of the light-emitting element in the general area (GA) due to high-brightness driving.
[0196] For example, as shown in FIG. 13, assuming the lifespan of the light-emitting element in the general area (GA) is 100%, it can be seen that the lifespan of the light-emitting element (R) emitting red light is reduced to 4% due to high-intensity driving in the photosensor area (SA), the lifespan of the light-emitting element (G) emitting green light is reduced to 9% due to high-intensity driving in the photosensor area (SA), and the lifespan of the light-emitting element (B) emitting blue light is reduced to 16% due to high-intensity driving in the photosensor area (SA).
[0197] As such, when the light-emitting element of the photosensor area (SA) is formed in a single stack structure identical to that of the light-emitting element of the general area (GA), the lifespan of the light-emitting element drops to less than 20% due to the high-brightness driving of the photosensor area (SA), which causes a problem in that a dark spot defect in the photosensor area (SA) can occur quickly and easily.
[0199] Figure 14 is a diagram showing the current density and luminance characteristics of a general light-emitting element and a multiple light-emitting element, respectively.
[0200] According to one embodiment of the present invention, a general light-emitting element (ED11, ED12, ED13) of a single stack structure is disposed in a general area (GA), while a multi-light-emitting element (ED21, ED22, ED23) of a multi-stack structure is disposed in a light sensor area (SA). Unlike the general light-emitting element (ED11, ED12, ED13), the multi-light-emitting element (ED21, ED22, ED23) further includes a sub-light-emitting layer (232), so that at a predetermined current density, it can emit light of a brighter luminance than the general light-emitting element (ED11, ED12, ED13).
[0201] That is, at a given current density, the brightness of the light emitted by the multi-stack structure multi-light-emitting element (ED2) can be higher than the brightness of the light emitted by the single-stack structure general light-emitting element (ED1).
[0202] For example, as shown in FIG. 14, when the current density is about 10, the brightness of the general light-emitting element (ED1) is about 4500 nits, whereas the brightness of the multiple light-emitting element (ED2) is about 9000 nits, which is about twice the brightness of the general light-emitting element (ED1).
[0203] In this way, since the multi-light-emitting element (ED2) emits light of higher brightness than the general light-emitting element (ED1) at a predetermined current density, the lifespan of the multi-light-emitting element (ED1) can be maintained similarly to the lifespan of the general light-emitting element (ED1) regardless of the high-brightness driving of the photosensor area (SA).
[0205] Figure 15 is a diagram showing the lifespan characteristics of a general light-emitting element and a multi-light-emitting element, respectively.
[0206] As shown in FIG. 15, it can be seen that the slope of the lifespan reduction of the multi-light-emitting element (ED2) is smaller than the slope of the lifespan reduction of the general light-emitting element (ED1).
[0207] That is, the multi-light-emitting element (ED2) can maintain high brightness operation for a longer period than the general light-emitting element (ED1).
[0209] As described above, according to one embodiment of the present invention, the display area (AA) includes a light sensor area (SA) that overlaps with the light sensor (200) and a general area (GA) that is the remainder excluding the light sensor area (SA). The display panel (100) includes a multi-stack structure multi-light emitting element (ED21, ED22, ED23) that corresponds to each sub-pixel area (S_SPA) of the light sensor area (SA) and includes a main light emitting layer (231) and a sub-light emitting layer (232), and a single-stack structure general light emitting element (ED11, ED12, ED13) that corresponds to each sub-pixel area (G_SPA) of the general area (GA) and includes a main light emitting layer (231) and does not include a sub-light emitting layer (232).
[0210] Here, the light sensor area (SA) includes a light-transmitting pixel area (TSA) that transmits light toward the light sensor (200), as well as a plurality of sub-pixel areas (S_SPA) for image display. Thus, since the image display function can be implemented even in the light sensor area (SA), deformation of the display area (AA) can be prevented even if the light sensor (200) is placed below the display panel (100).
[0211] The multiple light-emitting elements (ED21, ED22, ED23) of the light sensor area (SA) are driven to emit light of higher brightness than the general light-emitting elements (ED11, ED12, ED13) of the general area (SA). Accordingly, the brightness of the light emitted from each subpixel area (S_SPA) of the light sensor area (SA) can be higher than the brightness of the light emitted from each subpixel area (G_SPA) of the general area (GA). As a result, even though the light sensor area (SA), including the light-transmitting pixel area (TSA), has a lower resolution than the general area (GA), it is prevented that the light sensor area (SA) is seen as darker than the general area (GA). Consequently, the degradation of the image quality of the display panel can be prevented.
[0212] The multiple light-emitting elements (ED21, ED22, ED23) of the photosensor region (SA) emit light of higher brightness than the general light-emitting elements (ED11, ED12, ED13) at a predetermined current density. As a result, despite the high-brightness driving of the photosensor region (SA), the lifespan of the multiple light-emitting elements (ED21, ED22, ED23) of the photosensor region (SA) is prevented from decreasing rapidly compared to the general light-emitting elements (ED11, ED12, ED13) of the general region (GA). Consequently, the easy occurrence of dark spots in the photosensor region (SA) can be prevented.
[0214] Next, a method for manufacturing a display panel according to one embodiment of the present invention will be described.
[0215] FIG. 16 is a drawing showing a method for manufacturing a display panel according to an embodiment of the present invention. FIGS. 17 to 29 are process diagrams showing some steps illustrated in FIG. 16.
[0216] As illustrated in FIG. 16, a method for manufacturing a display panel (100) according to an embodiment of the present invention comprises the steps of: placing a first electrode (210) (S10); placing a first hole injection layer (233') (S20); placing a first hole transport layer (233) (S30); placing a sub-emissive layer (232) of a photosensor region (SA) using a first mask (S41); placing a second electron transport layer (2351) of a photosensor region (SA) using a second mask (S42); placing a charge generation layer (2352) of a photosensor region (SA) using a second mask (S43); placing a second hole transport layer (2353) of a photosensor region (SA) using a second mask (S44); and placing a thickness control layer (236) of a general region (GA) using a third mask. The method includes the steps of: placing a color control layer (237) in some subpixel areas corresponding to first and second colors in relatively long wavelength regions using a fourth mask (S60); placing a main light-emitting layer (231) in a general area (GA) and a light sensor area (SA) (S70); placing a first electron transport layer (234) (S80); and placing a second electrode (220) (S90).
[0217] As illustrated in FIG. 17, a first electrode (210) is disposed corresponding to each of a plurality of subpixel areas (G_SPA, S_SPA) included in the general area (GA) and the optical sensor area (SA) of the display area (AA). (S10)
[0218] Referring to FIGS. 6, 9 and 10, the first electrode (210) can be placed on the planarization film (1021) of the transistor array (102).
[0219] For example, the step (S10) of placing the first electrode (210) may include a patterning process of a conductive material film placed on a planarization film (1021).
[0220] As shown in FIG. 18, a first hole injection layer (233') is disposed on the first electrode (210) (S20), and a first hole transport layer (233) is disposed on the first hole injection layer (233'). (S30)
[0221] For example, the step (S20) of placing the first hole injection layer (233') may include the process of laminating a hole-injectable material over the entire display area (AA).
[0222] And, the step (S30) of placing the first hole transport layer (233) may include the process of stacking a hole transportable material over the entire display area (AA).
[0223] Next, using the first mask (M1-1, M1-2, M1-3), a sub-emissive layer (232) corresponding to each sub-pixel region (S_SPA1, S_SPA2, S_SPA3) included in the optical sensor region (SA) is disposed. (S41)
[0224] The first mask (M1-1, M1-2, M1-3) is a tool that covers the remaining area excluding the subpixel areas (S_SPA1, S_SPA2, S_SPA3) of each color included in the light sensor area (SA) within the display area (AA). Here, the first mask (M1-1, M1-2, M1-3) is provided for each color.
[0225] That is, the first mask (M1) includes a first mask (M1-1) of a first color that selectively opens a first subpixel area (S_SPA1) included in the optical sensor area (SA), a first mask (M1-2) of a second color that selectively opens a second subpixel area (S_SPA2) included in the optical sensor area (SA), and a first mask (M1-3) of a third color that selectively opens a third subpixel area (S_SPA3) included in the optical sensor area (SA).
[0226] As shown in FIG. 19, by stacking a first light-emitting material corresponding to the first color while a first mask (M1-1) of the first color is placed, a first color sub-light-emitting layer (2321) corresponding to the first sub-pixel area (S_SPA1) of the photosensor area (SA) is placed on the first hole transport layer (233).
[0227] As shown in FIG. 20, by stacking a second light-emitting material corresponding to the second color while the first mask (M1-2) of the second color is placed, a second color sub-light-emitting layer (2322) corresponding to the second sub-pixel area (S_SPA2) of the photosensor area (SA) is placed on the first hole transport layer (233).
[0228] As shown in FIG. 21, by stacking a third light-emitting material corresponding to the third color while the first mask (M1-3) of the third color is placed, a third color sub-light-emitting layer (2323) corresponding to the third sub-pixel area (S_SPA3) of the photosensor area (SA) is placed on the first hole transport layer (233).
[0229] As illustrated in FIG. 22, a second mask (M2) covering the remaining area of the display area (AA) excluding the light sensor area (SA) is used to place a second electron transport layer (2351) corresponding to each subpixel area (S_SPA) included in the light sensor area (SA) on the sub-emissive layer (2321, 2322, 2323). (S42)
[0230] The step (S42) of placing the second electron transport layer (2351) may include the process of stacking an electron transport material in the optical sensor area (SA).
[0231] Next, using the second mask (M2), a charge generation layer (2352) corresponding to each subpixel region (S_SPA) included in the photosensor region (SA) is disposed on the second electron transport layer (2351). (S43)
[0232] The step (S43) of placing the charge generation layer (2352) may include the process of stacking a material that generates electrons in the photosensor region (SA) and the process of stacking a material that generates holes.
[0233] Subsequently, using the second mask (M2), a second hole transport layer (2353) corresponding to each subpixel area (S_SPA) included in the optical sensor area (SA) is disposed on the charge generation layer (2352). (S44)
[0234] The step (S44) of placing the second hole transport layer (2353) may include the process of stacking a hole transportable material in the optical sensor region (SA).
[0235] As illustrated in FIG. 23, a thickness control layer (236) corresponding to each subpixel area (G_SPA) included in the general area (GA) is disposed on the first hole transport layer (233) using a third mask (M3) that covers the remaining area of the display area (AA) excluding the general area (GA). (S50)
[0236] The step (S50) of placing the thickness control layer (236) may include the process of stacking a hole transportable material in the general area (GA).
[0237] Next, a color adjustment layer (237) corresponding to the first and second subpixel regions (G_SPA1, G_SPA2) (S_SPA1, S_SPA2) included in the general region (GA) and the optical sensor region (GA) is placed using the fourth mask (M4-1, M4-2, M4-3). (S60)
[0238] The fourth mask (M4-1, M4-2, M4-3) is a tool that covers the remaining area excluding the subpixel areas (G_SPA1, G_SPA2, G_SPA3) (S_SPA1, S_SPA2, S_SPA3) of each color included in the display area (AA). Here, the fourth mask (M4-1, M4-2, M4-3) is provided for each color.
[0239] That is, the fourth mask (M4) includes a fourth mask (M4-1) of a first color that selectively opens a first subpixel area (G_SPA1, S_SPA1) included in the general area (GA) and the optical sensor area (GA), a fourth mask (M4-2) of a second color that selectively opens a second subpixel area (G_SPA2, S_SPA2) included in the general area (GA) and the optical sensor area (GA), and a fourth mask (M4-3) of a third color that selectively opens a third subpixel area (G_SPA3, S_SPA3) included in the general area (GA) and the optical sensor area (GA).
[0240] Here, the step (S60) of placing the color control layer (237) may include the process of stacking a hole transportable material while the fourth mask (M4-1, M4-2) is placed.
[0241] As shown in FIG. 24, a process of stacking a hole-transporting material is performed while a fourth mask (M4-1) of a first color, which is a wavelength region longer than the second and third colors, is placed, and a first color control layer (2371) of a first thickness corresponding to the first subpixel regions (G_SPA1, S_SPA1) of the general region (GA) and the optical sensor region (GA) is placed.
[0242] The first color control layer (2371) corresponding to the first subpixel area (G_SPA1) of the general area (GA) is placed on the thickness control layer (236).
[0243] The first color control layer (2371) corresponding to the first subpixel area (S_SPA1) of the optical sensor area (SA) is disposed on the second hole transport layer (2353).
[0244] As shown in FIG. 25, a process of stacking a hole-transporting material is performed while a fourth mask (M4-2) of a second color, which is a wavelength region longer than the third color, is placed, and a second color control layer (2372) of a second thickness corresponding to the second subpixel regions (G_SPA2, S_SPA2) of the general region (GA) and the optical sensor region (GA) is placed.
[0245] A second color control layer (2372) corresponding to a second subpixel area (G_SPA2) of a general area (GA) is placed on a thickness control layer (236).
[0246] A second color control layer (2372) corresponding to a second subpixel area (S_SPA2) of a light sensor area (SA) is disposed on a second hole transport layer (2353).
[0247] Next, a main light-emitting layer (231) corresponding to the first and second subpixel regions (G_SPA1, G_SPA2, G_SPA3) (S_SPA1, S_SPA2, S_SPA3) included in the general region (GA) and the light sensor region (GA) is disposed using the fourth mask (M4-1, M4-2, M4-3). (S70)
[0248] As illustrated in FIG. 26, through the process of stacking the first light-emitting material while the fourth mask (M4-1) of the first color is placed, the first main light-emitting layer (2311) of the first color corresponding to the first subpixel area (G_SPA1) of the general area (GA) and the first subpixel area (S_SPA1) of the light sensor area (SA), respectively, is placed on the first color control layer (2371).
[0249] As illustrated in FIG. 27, through the process of stacking a second light-emitting material while a fourth mask (M4-2) of the second color is placed, a second main light-emitting layer (2312) of the second color corresponding to each of the second subpixel area (G_SPA2) of the general area (GA) and the second subpixel area (S_SPA2) of the light sensor area (SA) is placed on the second color control layer (2372).
[0250] As illustrated in FIG. 28, through the process of stacking a third light-emitting material while a fourth mask (M4-3) of the third color is placed, a third color main light-emitting layer (2313) corresponding to a second subpixel area (G_SPA2) of the general area (GA) is placed on the thickness control layer (236), and a third color main light-emitting layer (2313) corresponding to a third subpixel area (S_SPA3) of the light sensor area (SA) is placed on the second hole transport layer (2353).
[0251] As shown in FIG. 29, a first electron transport layer (234) is disposed on the main light-emitting layer (231) (S80), and a second electrode (220) is disposed on the first electron transport layer (234). (S90)
[0252] For example, the step (S80) of placing the first electron transport layer (234) may include the process of laminating an electron transport material over the entire display area (AA).
[0253] And, the step (S90) of placing the second electrode (220) may include the process of laminating a conductive material film over the entire display area (AA).
[0255] As described above, in a method for manufacturing a display panel according to one embodiment of the present invention, a general light-emitting element (ED11, ED12, ED13) can be relatively easily disposed in each subpixel area (G_SPA) of a general area (GA), and a multi-light-emitting element (ED21, ED22, ED23) having a multi-stack structure different from the general light-emitting element (ED11, ED12, ED13) can be disposed in each subpixel area (S_SPA) of a light sensor area (SA).
[0257] It will be obvious to those skilled in the art that the invention described above is not limited to the embodiments and attached drawings, and that various substitutions, modifications, and changes are possible within the scope of the technical concept of the invention. Explanation of the symbols
[0259] 10: Display device AA: Display area GA: General area CA: Optical sensor area 100: Display panel 11: Gate drive unit 12: Data driver 13: Timing controller G_SPA: Subpixel area of the general area ED11, ED12, ED13: General light-emitting diodes S_SPA: Subpixel area of the optical sensor region TSA: Light-transmitting pixel area ED21, ED22, ED23: Multiple light-emitting devices 210: First electrode 220: Second electrode 231: Main light-emitting layer 232: Sub light-emitting layer 233: 1st electron transport layer 234: 1st electron transport layer 2351: Second electron transport layer 2352: Charge generation layer 2353: Second hole transport layer 236: Thickness control layer 237: Color adjustment layer
Claims
Claim 1 A display panel comprising: a general area including first type subpixel areas; a light sensor area including second type subpixel areas and a plurality of light-transmitting pixel areas configured to transmit light, wherein the light sensor area is configured to overlap with the light sensor; a first-1 color subpixel disposed in the first type subpixel area; and a second-1 color subpixel disposed in the second type subpixel area, wherein the first-1 color subpixel comprises a first-1 electrode, a first-2 electrode, and a first-1 main light-emitting layer disposed between the first-1 electrode and the first-2 electrode, and the second-1 color subpixel comprises a second-1 electrode, a second-2 electrode, a second-1 main light-emitting layer disposed between the second-1 electrode and the second-2 electrode, and a first sub-light-emitting layer disposed between the second-1 electrode and the second-2 electrode. Claim 2 A display panel according to claim 1, wherein the first-1 main light-emitting layer, the second-1 main light-emitting layer, and the first sub-light-emitting layer are all configured to emit light of the same first color. Claim 3 In claim 1, the display panel further comprises a first main thickness control layer disposed between the first-1 electrode and the first-2 electrode, wherein the subpixel of the first-1 color. Claim 4 A display panel according to claim 1, wherein the distance between the first-1 electrode and the first-2 electrode within the first-1 color subpixel and the distance between the second-1 electrode and the second-2 electrode within the second-1 color subpixel are the same. Claim 5 In claim 3, the display panel further comprises a first-1 color thickness control layer disposed between the first-1 main light-emitting layer and the first main thickness control layer, wherein the first-1 color subpixel comprises a first-1 color thickness control layer. Claim 6 In claim 1, the subpixel of the first-1 color further comprises: a first-1 hole injection layer disposed between the first-1 electrode and the first-1 main light-emitting layer; a first-1 hole transport layer disposed between the first-1 hole injection layer and the first-1 main light-emitting layer; and a first-1 electron transport layer disposed between the first-1 main light-emitting layer and the first-2 electrode. Claim 7 In claim 1, the subpixel of the second-1 color further comprises: a second-1 hole injection layer disposed between the second-1 electrode and the first sub-emissive layer; a second-1 hole transport layer disposed between the second-1 hole injection layer and the first sub-emissive layer; a first charge generation layer disposed between the first sub-emissive layer and the second-1 main emissive layer; and a second-1 electron transport layer disposed between the second-1 main emissive layer and the second-2 electrode. Claim 8 In claim 7, the subpixel of the 2-1 color further comprises a 2-1 color adjustment layer disposed between the 2-1 main light-emitting layer and the 1 sub-light-emitting layer, in a display panel. Claim 9 A display panel according to claim 1, further comprising a first-2 color subpixel disposed in a first type subpixel area and a second-2 color subpixel disposed in a second type subpixel area, wherein the first-2 color subpixel comprises a first-1 electrode, a first-2 electrode, and a first-2 main light-emitting layer disposed between the first-1 electrode and the first-2 electrode, and the second-2 color subpixel comprises a second-1 electrode, a second-2 electrode, a second-2 main light-emitting layer disposed between the second-1 electrode and the second-2 electrode, and a second sub-light-emitting layer disposed between the second-1 electrode and the second-2 electrode. Claim 10 In claim 9, the subpixel of the first-2 color further comprises a second main thickness control layer disposed between the first-1 electrode and the first-2 electrode, in a display panel. Claim 11 In claim 10, a display panel in which the distance between the 1-1 electrode and the 1-2 electrode of the 1-2 color subpixel and the distance between the 2-1 electrode and the 2-2 electrode of the 2-2 color subpixel are the same. Claim 12 In claim 10, the display panel further comprises a first-2 color control layer disposed between the first-2 main light-emitting layer and the second main thickness control layer, wherein the first-2 color subpixel further comprises a first-2 color control layer. Claim 13 A display panel according to claim 9, further comprising a first-3 color subpixel disposed in a first type subpixel area and a second-3 color subpixel disposed in a second type subpixel area, wherein the first-3 color subpixel comprises a first-1 electrode, a first-2 electrode, and a first-3 main light-emitting layer disposed between the first-1 electrode and the first-2 electrode, and the second-3 color subpixel comprises a second-1 electrode, a second-2 electrode, a second-3 main light-emitting layer disposed between the second-1 electrode and the second-2 electrode, and a third sub-light-emitting layer disposed between the second-1 electrode and the second-2 electrode. Claim 14 A display device comprising: a display panel according to claim 1; and a panel driving unit for supplying a driving signal to the display panel. Claim 15 A method for manufacturing a display panel, comprising: a step of placing a first-1 electrode on a substrate in a first-1 color subpixel included in a first-type subpixel area within a general area of a display area; a step of placing a first-1 main light-emitting layer on the first-1 electrode of the first-1 color subpixel; a step of placing a first-2 electrode on the first-1 main light-emitting layer; a step of placing a second-1 electrode on a substrate in a second-1 color subpixel included in a second-type subpixel area within a light sensor area of a display area; a step of placing a first sub-light-emitting layer on the second-1 electrode; a step of placing a second-1 main light-emitting layer on the first sub-light-emitting layer; and a step of placing a second-2 electrode on the second-1 main light-emitting layer. Claim 16 A method for manufacturing a display panel according to claim 15, wherein the first-1 main light-emitting layer, the second-1 main light-emitting layer, and the first sub-light-emitting layer are all configured to emit light of the same first color. Claim 17 A method for manufacturing a display panel according to claim 15, further comprising the step of placing a first main thickness control layer on the first-1 electrode in the first-1 color subpixel. Claim 18 A method for manufacturing a display panel according to claim 17, wherein the distance between the first-1 electrode and the first-2 electrode and the distance between the second-1 electrode and the second-2 electrode are the same. Claim 19 A method for manufacturing a display panel according to claim 17, further comprising the step of placing a 1-1 color adjustment layer on the 1st main thickness adjustment layer. Claim 20 A method for manufacturing a display panel in which, in claim 19, the thickness of the first main thickness adjustment layer is greater than the thickness of the first-1 color adjustment layer.
Citation Information
Patent Citations
Display Device
KR1020190135848A