Light-emitting device

Abstract

A light-emitting element comprises: a substrate; a plurality of light-emitting units located on the substrate and including a first light-emitting unit, a second light-emitting unit, and one or more third light-emitting units; an insulating layer including a first insulating layer opening and a second insulating layer opening located at each of the plurality of light-emitting units; a first stretched electrode covering the first light-emitting unit, covering the first insulating layer opening located at the first light-emitting unit but not covering the second insulating layer opening of the first light-emitting unit; a second stretched electrode covering the second light-emitting unit, covering the second insulating layer opening located at the second light-emitting unit but not covering the first insulating layer opening located at the second light-emitting unit; a first electrode pad covering the plurality of light-emitting units in a first portion; and a second electrode pad covering the plurality of light-emitting units in a second portion.

Description

Technology Field

[0001] The present invention relates to a light-emitting device, and more particularly to a flip-chip light-emitting device comprising a semiconductor stack, a first electrode pad, and a second electrode pad located on the same side of the semiconductor stack. Background Technology

[0002] Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices that possess excellent photoelectric characteristics, such as low power consumption, minimal heat generation, a long operating life, shock resistance, a compact size, fast response speed, and stable emission wavelengths. Consequently, LEDs are widely used in home appliances, device indicators, and optoelectronic products. The problem to be solved

[0003] The objective of the present invention is to provide a light-emitting element that improves the light extraction efficiency of the light-emitting element.

[0004] The objective of the present invention is to provide a light-emitting element that improves the structural reliability of the light-emitting element.

[0005] The objective of the present invention is to provide a light-emitting device that reduces the possibility of device failure due to damage to the insulating layer. means of solving the problem

[0006] In order to achieve one or more of the above-described objectives, according to one embodiment of the present invention, a light-emitting element is disclosed comprising: a substrate including an upper surface; a plurality of light-emitting units located on the upper surface of the substrate, each comprising a first light-emitting unit, a second light-emitting unit, and one or more third light-emitting units, each comprising a first semiconductor layer, an active layer, and a second semiconductor layer; an insulating layer including a first insulating layer opening and a second insulating layer opening located in each of the plurality of light-emitting units; a first stretched electrode covering the first light-emitting unit, covering the first insulating layer opening located in the first light-emitting unit but not covering the second insulating layer opening located in the first light-emitting unit; a second stretched electrode covering the second light-emitting unit, covering the second insulating layer opening located in the second light-emitting unit but not covering the first insulating layer opening located in the second light-emitting unit; a first electrode pad covering a part of the plurality of light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

[0007] In order to achieve one or more of the above-described objectives, according to one embodiment of the present invention, a light-emitting element is disclosed comprising: a substrate including an upper surface; a plurality of light-emitting units located on the upper surface of the substrate, each comprising a first light-emitting unit, a second light-emitting unit, and one or more third light-emitting units, each comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a first metal layer covering a portion of the first light-emitting unit and a plurality of third light-emitting units; a second metal layer covering another portion of the second light-emitting unit and a plurality of third light-emitting units; a first electrode pad covering a portion of the plurality of light-emitting units; and a second electrode pad covering another portion of the plurality of light-emitting units, wherein the first metal layer and the second metal layer are electrically insulated from the plurality of light-emitting units. Brief explanation of the drawing

[0008] FIG. 1 is a plan view of a light-emitting element (1) disclosed according to one embodiment of the present invention. Figure 2 is a cross-sectional view along the cutting line A-A' of Figure 1. Figure 3 is a cross-sectional view along the cutting line B-B' of Figure 1. Figure 4 is a cross-sectional view along the cutting line C-C1-C2-C' of Figure 1. Fig. 5 is a cross-sectional view along the cutting line D-D1-D2-D' of Fig. 1. FIG. 6 is a plan view of a light-emitting element (2) disclosed according to one embodiment of the present invention. Figure 7 is a cross-sectional view along the cutting line E-E1-E2-E' of Figure 6. FIG. 8 is a cross-sectional view along the cutting line F-F1-F2-F' of FIG. 6. Figure 9 is a cross-sectional view along the cutting line G-G' of Figure 6. Figure 10 is a cross-sectional view along the cutting line H-H' of Figure 6. FIG. 11 is a plan view of a light-emitting element (3) disclosed according to one embodiment of the present invention. FIG. 12 is a cross-sectional view along the cutting line I-I1-I2-I3-I4-I' of FIG. 11. FIG. 13 is a cross-sectional view along the cutting line J-J5-J4-J3-J2-J1-J' of FIG. 11. FIG. 14 is a cross-sectional view along the cutting line K-K1-K2-K' of FIG. 11. FIG. 15 is a plan view of a light-emitting element (4) disclosed according to one embodiment of the present invention. Figure 16 is a cross-sectional view along the cutting line L-L' of Figure 15. FIG. 17 is a schematic diagram of a light-emitting device (5) according to one embodiment of the present invention. FIG. 18 is a schematic diagram of a light-emitting device (6) according to one embodiment of the present invention. Specific details for implementing the invention

[0009] To make the description of the present invention more detailed and complete, please refer to the following description of the embodiments and the related drawings in combination. However, the following embodiments are merely examples of the light-emitting elements of the present invention, and the present invention is not limited by the following embodiments. Furthermore, unless otherwise specified, the size, material, shape, relative arrangement, etc., of the components described in the embodiments of this specification are merely descriptions, and the scope of the present invention is not limited thereto. Additionally, the size or positional relationship of the components shown in each drawing may be expanded for clear explanation. Also, in the following description, identical or similar components are indicated by the same names and reference numerals to appropriately omit detailed descriptions.

[0010] FIG. 1 is a plan view of a light-emitting element (1) disclosed according to one embodiment of the present invention. FIG. 2 is a cross-sectional view along the cutting line A-A' of FIG. 1. FIG. 3 is a cross-sectional view along the cutting line B-B' of FIG. 1. FIG. 4 is a cross-sectional view along the cutting line C-C1-C2-C' of FIG. 1. FIG. 5 is a cross-sectional view along the cutting line D-D1-D2-D' of FIG. 1.

[0011] As illustrated in FIGS. 1, 2, 3, 4 and 5, a light-emitting element (1) comprises a substrate (10), a plurality of light-emitting units (C1 to C6), an insulating layer (60), a first stretching electrode (7100), a second stretching electrode (7200), a first electrode pad (91) and a first electrode pad (92), wherein the substrate (10) comprises an upper surface (100), and the plurality of light-emitting units (C1 to C6) are located on the upper surface (100) of the substrate (10), and include a first light-emitting unit (C1), a second light-emitting unit (C6), and one or more third light-emitting units (C2, C3, C4 and C5), and each of the plurality of light-emitting units (C1 to C6) comprises a first semiconductor layer (201), an active layer (202), and a second semiconductor layer (203), and the insulating layer (60) is a first insulating layer located on each of the plurality of light-emitting units (C1 to C6). It includes an opening (601) and a second insulating layer opening (602), and the first stretching electrode (7100) covers the first light-emitting unit (C1), the first stretching electrode (7100) covers the first insulating layer opening (601) located in the first light-emitting unit (C1) but does not cover the second insulating layer opening (602) of the first light-emitting unit (C1), and the second stretching electrode (7200) covers the second light-emitting unit (C6), the second stretching electrode (7200) covers the second insulating layer opening (602) located in the second light-emitting unit (C6) but does not cover the first insulating layer opening (601) of the second light-emitting unit (C6), and the first electrode pad (91) covers the first part of the plurality of light-emitting units (C1~C6), and the second electrode pad (92) of the plurality of light-emitting units (C1~C6) Covers the second part.

[0012] The substrate (10) includes an upper surface (100). The substrate (10) may be a growth substrate for epitaxially growing a semiconductor stack (20) and may include a gallium arsenide (GaAs) wafer for epitaxially growing aluminum gallium indium phosphide (AlGaInP), or a sapphire (Al2O3) wafer, a gallium nitride (GaN) wafer, a silicon carbide (SiC) wafer, or an aluminum nitride (AlN) wafer for growing gallium nitride (GaN), indium gallium nitride (InGaN), or aluminum gallium nitride (AlGaN). In another embodiment, the substrate (10) may be a support substrate, and the existing growth substrate for epitaxially growing the semiconductor stack (20) may be selectively removed according to application requirements, after which the semiconductor stack (20) may be transferred to the support substrate described above.

[0013] The support substrate comprises an electrically conductive material such as silicon (Si), aluminum (Al), copper (Cu), tungsten (W), molybdenum (Mo), gold (Au), silver (Ag), silicon carbide (SiC), or an alloy thereof, or a thermally conductive material such as diamond, graphite, or aluminum nitride. Additionally, although not shown in the drawing, an additional roughened surface may be provided on one side of the substrate (10) that contacts the semiconductor stack (20), and the roughened surface may be a surface having an irregular shape or a surface having a regular shape, for example, with respect to the upper surface (100), a surface having a plurality of hemispherical shapes that protrude or are concave on the upper surface (100), a surface having a plurality of conical shapes that protrude or are concave on the upper surface (100), or a surface having a plurality of polygonal pyramidal shapes that protrude or are concave on the upper surface (100).

[0014] In one embodiment of the present invention, a semiconductor stack (20) having photoelectric properties (e.g., a light-emitting stack) can be formed on a substrate (10) by an organometallic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), physical vapor deposition (PVD), or ion plating method, and the physical vapor deposition method includes sputtering or evaporation.

[0015] In one embodiment of the present invention, the semiconductor stack (20) comprises a first semiconductor layer (201), an active layer (202), and a second semiconductor layer (203). The semiconductor stack (20) may further comprise a buffer layer (not shown) located between the first semiconductor layer (201) and the substrate (10), and the buffer layer releases stress caused by material lattice mismatch between the substrate (10) and the semiconductor stack (20) to reduce dislocations and lattice defects and improve epitaxial quality. The buffer layer may have a structure comprising a single layer or multiple layers. In one embodiment, PVD aluminum nitride (AlN) is selected as the buffer layer and formed between the semiconductor stack (20) and the substrate (10) to improve the epitaxial quality of the semiconductor stack (20). In one embodiment, the target for forming the PVD aluminum nitride (AlN) is composed of aluminum nitride. In another embodiment, aluminum nitride is formed reactively with the aluminum target in a nitrogen source atmosphere using a target composed of aluminum.

[0016] The wavelength emitted by the light-emitting element (1) is adjusted by changing the physical and chemical composition of one or more layers of the semiconductor stack (20). The material of the semiconductor stack (20) includes a group III-V semiconductor material, for example, AlxInyGa(1-xy)N or AlxInyGa(1-xy)P, and is 0x, y1, and (x+y)1. If the material of the semiconductor stack (20) is an AlInGaP-based material, it can emit red light with a wavelength of 610 nm to 650 nm, or green light with a wavelength of 530 nm to 570 nm. If the material of the semiconductor stack (20) is an InGaN-based material, it can emit blue light with a wavelength of 400 nm to 490 nm. If the material of the semiconductor stack (20) is an AlGaN-based or AlInGaN-based material, it can emit ultraviolet light with a wavelength of 400 nm to 250 nm.

[0017] The first semiconductor layer (201) and the second semiconductor layer (203) may be cladding layers, and the two may have different conductivity types, electrical characteristics, and polarities, or provide electrons or holes depending on the doping element, for example, the first semiconductor layer (201) is a semiconductor with n-type electrical characteristics and the second semiconductor layer (203) is a semiconductor with p-type electrical characteristics. An active layer (202) is formed between the first semiconductor layer (201) and the second semiconductor layer (203), and electrons and holes are recombined in the active layer (202) by current driving to convert electrical energy into light energy so that light rays are emitted. The active layer (202) may be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the active layer (202) may be a semiconductor with neutral, p-type, or n-type electrical characteristics. The first semiconductor layer (201), the second semiconductor layer (203), or the active layer (202) may have a structure including a single layer or multiple layers.

[0018] As illustrated in FIGS. 2, 3, 4, and 5, selective etching is performed on the semiconductor stack (20) to form a recess (200) and a semiconductor platform (204). Specifically, the semiconductor platform (204) is formed by removing a portion of the second semiconductor layer (203) and the active layer (202) to form a structure including a first semiconductor layer (201), a second semiconductor layer (203), and an active layer (202). The recess (200) is formed by removing a portion of the second semiconductor layer (203) and the active layer (202) to expose the first semiconductor layer (201).

[0019] The light-emitting element (1) includes trenches (T12, T23, T34, T45, T56) located between two adjacent light-emitting units among a plurality of light-emitting units (C1~C6), and the trenches (T12, T23, T34, T45, T56) expose the upper surface (100) of the substrate (10). As shown in FIG. 1, the light-emitting element (1) includes a first trench (T12) located between a first light-emitting unit (C1) and a third light-emitting unit (C2); a second trench (T23) located between two adjacent third light-emitting units (C2 and C3); a third trench (T34) located between two adjacent third light-emitting units (C3 and C4); and a fourth trench (T45) located between two adjacent third light-emitting units (C4 and C5). and a fifth trench (T56) located between the third light-emitting unit (C5) and the second light-emitting unit (C6); and each trench (T12, T23, T34, T45, T56) exposes the upper surface (100) of the substrate (10).

[0020] The light-emitting element (1) includes one or more current limiting layers (30) located on the second semiconductor layer (203). The current limiting layer (30) is aluminum oxide (Al2O3) or silicon nitride (SiN x ), silicon oxide (SiO₂ x ), titanium oxide (TiO₂ x ), or magnesium fluoride (MgF x It is formed from a non-conductive material including ). The current limiting layer (30) may include a dispersed Bragg reflector (DBR), and the dispersed Bragg reflector is formed by stacking insulating materials with different refractive indices together. The current limiting layer (30) has a light transmittance of 80% or more or a light reflectance of 80% or more for the light emitted by the active layer (202).

[0021] The light-emitting element (1) includes a conductive layer (40) located on the second semiconductor layer (203) and / or the current limiting layer (30), and the conductive layer (40) covers the sidewalls of the current limiting layer (30). The conductive layer (40) covering the current limiting layer (30) includes a surface contour corresponding to the contour of the current limiting layer (30). The material of the conductive layer (40) includes a material that is transparent to light emitted by the active layer (202), for example, a metal material or a transparent conductive oxide. The transparent conductive oxide includes indium tin oxide (ITO) or indium zinc oxide (IZO).

[0022] A light-emitting element (1) includes one or more first contact electrodes (51) each located in one or more recesses (200) of each of a plurality of light-emitting units (C1 to C6) to contact a first semiconductor layer (201), and one or more second contact electrodes (52) each located on a second semiconductor layer (203) of each of a plurality of light-emitting units (C1 to C6). The first contact electrode (51) is in direct contact with the first semiconductor layer (201) of each of a plurality of light-emitting units (C1 to C6), and the second contact electrode (52) is in direct contact with the conductive layer (40), current limiting layer (30), or second semiconductor layer (203) of each of a plurality of light-emitting units (C1 to C6).

[0023] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the position of the second contact electrode (52) is almost the same as the position of the current limiting layer (30). The shape of the second contact electrode (52) may be the same as or different from the shape of the current limiting layer (30).

[0024] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first contact electrode (51) is located between a plurality of second contact electrodes (52).

[0025] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, a plurality of second contact electrodes (52) include a second quantity greater than the first quantity of a plurality of first contact electrodes (51).

[0026] A light-emitting element (1) includes an insulating layer (60) covering a semiconductor stack (20), and the insulating layer (60) includes one or more first insulating layer openings (601) exposing one or more first contact electrodes (51) and one or more second insulating layer openings (602) exposing one or more second contact electrodes (52).

[0027] As illustrated in FIGS. 1 and 3, the light-emitting element (1) includes a first stretching electrode (7100) covering a first light-emitting unit (C1) and a plurality of third light-emitting units (C2 and C3). The first stretching electrode (7100) covers a first insulating layer opening (601) located in the first light-emitting unit (C1), but does not cover a second insulating layer opening (602) of the first light-emitting unit (C1) and a first insulating layer opening (601) and a second insulating layer opening (602) of the plurality of third light-emitting units (C2 and C3). The first stretching electrode (7100) contacts the first contact electrode (51) of the first light-emitting unit (C1) through the first insulating layer opening (601) of the first light-emitting unit (C1) and is electrically connected to the first semiconductor layer (201) of the first light-emitting unit (C1).

[0028] As illustrated in FIGS. 1 and 2, the light-emitting element (1) further includes a second stretching electrode (7200) covering a second light-emitting unit (C6) and a plurality of third light-emitting units (C4 and C5). The second stretching electrode (7200) covers a second insulating layer opening (602) located in the second light-emitting unit (C6), but does not cover the first insulating layer opening (601) of the second light-emitting unit (C6) and the first insulating layer opening (601) and second insulating layer opening (602) of the plurality of third light-emitting units (C4 and C5). The second stretching electrode (7200) contacts the second contact electrode (52) of the second light-emitting unit (C6) through the second insulating layer opening (602) of the second light-emitting unit (C6) and is electrically connected to the second semiconductor layer (203) of the second light-emitting unit (C6).

[0029] The light-emitting element (1) includes one or more connecting electrodes (71 to 75) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C6). As shown in FIG. 1, the connecting electrodes (71 to 75) include a first connecting electrode (71), a second connecting electrode (72), a third connecting electrode (73), a fourth connecting electrode (74), and a fifth connecting electrode (75). The first connecting electrode (71) is located between the first light-emitting unit (C1) and the third light-emitting unit (C2), the second connecting electrode (72) is located between two adjacent third light-emitting units (C2 and C3), the third connecting electrode (73) is located between two adjacent third light-emitting units (C3 and C4), the fourth connecting electrode (74) is located between two adjacent third light-emitting units (C4 and C5), and the fifth connecting electrode (75) is located between the third light-emitting unit (C5) and the second light-emitting unit (C6).

[0030] The first connecting electrode (71), the second connecting electrode (72), the third connecting electrode (73), the fourth connecting electrode (74), and the fifth connecting electrode (75) each include a first electrical connecting portion (712, 713, 714, 715, and 716), a bridge connecting portion (701, 702, 703, 704, and 705), and a second electrical connecting portion (721, 722, 723, 724, and 725).

[0031] The first electrical connection portions (712, 713, 714, 715 and 716) of the connecting electrodes (71-75) are in contact with one or more first contact electrodes (51) so as to be electrically connected to the first semiconductor layer (201) of each of the plurality of light-emitting units (C1-C6) by the first contact electrodes (51). The second electrical connection portions (721, 722, 723, 724 and 725) of the connecting electrodes (71-75) are in contact with one or more second contact electrodes (52) so as to be electrically connected to the second semiconductor layer (203) of each of the plurality of light-emitting units (C1-C6) by the second contact electrodes (52).

[0032] The bridge connection portions (701, 702, 702, 704 and 705) of the connecting electrodes (71~75) are each located in trenches (T12, T23, T34, T45, T56) and are intended to electrically connect two adjacent light-emitting units among a plurality of light-emitting units (C1~C6).

[0033] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, a plurality of connecting electrodes (71 to 75) are located on both sides of the first stretching electrode (7100) and / or on both sides of the second stretching electrode (7200).

[0034] The first contact electrode (51), the second contact electrode (52), the first stretching electrode (7100), the second stretching electrode (7200), and the connecting electrodes (71-75) include metal materials such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), etc., or alloys thereof. The first contact electrode (51), the second contact electrode (52), the first stretching electrode (7100), the second stretching electrode (7200), and the connecting electrodes (71-75) may be composed of a single layer or multiple layers. For example, the first contact electrode (51), the second contact electrode (52), the first stretching electrode (7100), the second stretching electrode (7200) and / or the connecting electrodes (71-75) may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Cr / Ti / Al / Au layer, a Ti / Al / Ti / Au layer, a Cr / Al / Pt / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer.

[0035] A light-emitting element (1) includes a protective layer (80) covering a plurality of light-emitting units (C1 to C6), and the protective layer (80) includes one or more first protective layer openings (801) that expose a first stretching electrode (7100) and one or more second protective layer openings (802) that expose a second stretching electrode (7200).

[0036] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, a plurality of first protective layer openings (801) are each located on the first stretching electrode (7100) of the first light-emitting unit (C1) and the plurality of third light-emitting units (C2~C3), and a plurality of second protective layer openings (802) are each located on the second stretching electrode (7200) of the second light-emitting unit (C6) and the plurality of light-emitting units (C4~C5).

[0037] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1) (not shown), one or more first protective layer openings (801) are located only on the first stretching electrode (7100) of the first light-emitting unit (C1), and one or more second protective layer openings (802) are located only on the second stretching electrode (7200) of the second light-emitting unit (C6).

[0038] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the formation location of the first protective layer opening (801) does not overlap with the first insulating layer opening (601). The formation location of the second protective layer opening (802) does not overlap with the second insulating layer opening (602).

[0039] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first protective layer opening (801) and / or the second protective layer opening (802) include a non-linear pattern such as a curve.

[0040] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), the first insulating layer opening (601) and / or the second insulating layer opening (602) include a circular, elliptical, or polygonal shape.

[0041] The insulating layer (60) and the protective layer (80) are formed of a non-conductive material and include organic materials, inorganic materials, or dielectric materials. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin copolymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3) and silicon nitride (SiN2). x ), silicon oxide (SiO₂x ), titanium oxide (TiO₂ x ), or magnesium fluoride (MgF x Includes ).

[0042] The insulating layer (60) and / or the protective layer (80) may comprise two or more materials with different refractive indices and be alternately stacked to form a dispersed Bragg reflector (DBR) structure, which can selectively reflect light of a specific wavelength. For example, layers such as SiO2 / TiO2 or SiO2 / Nb2O5 may be stacked to form an insulating reflective layer with high reflectivity.

[0043] When the wavelength of light emitted by the light-emitting element (1) is λ, the optical thickness of the dispersed Bragg reflector (DBR) structure can be set to an integer multiple of λ / 4. Based on the fact that the optical thickness of the dispersed Bragg reflector (DBR) structure is an integer multiple of λ / 4, it can have a deviation of ±30%.

[0044] As illustrated in FIGS. 1, 4 and 5, the light-emitting element (1) includes a first electrode pad (91) that covers a first protective layer opening (801) and contacts a first stretching electrode (7100), and a second electrode pad (92) that covers a second protective layer opening (802) and contacts a second stretching electrode (7200).

[0045] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first electrode pad (91) and the second electrode pad (92) do not cover one or more connecting electrodes (71 to 75).

[0046] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first electrode pad (91) and the second electrode pad (92) do not cover the first insulating layer opening (601) and / or the second insulating layer opening (602).

[0047] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, a plurality of connecting electrodes (71-72) are located on both sides of the first electrode pad (91), and / or a plurality of connecting electrodes (74-75) are located on both sides of the second electrode pad (92).

[0048] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first electrode pad (91) is each surrounded by a plurality of connecting electrodes (71-72), and / or the second electrode pad (92) is each surrounded by a plurality of connecting electrodes (74-75).

[0049] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first electrode pad (91) includes a first electrode pad area smaller than the first surface area of ​​the first stretched electrode (7100), or the second electrode pad (92) includes a second electrode pad area smaller than the second surface area of ​​the second stretched electrode (7200).

[0050] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (1), as shown in FIG. 1, the first quantity of a plurality of light-emitting units (C1~C6) covered by the first electrode pad (91) is the same as or different from the second quantity of a plurality of light-emitting units (C1~C6) covered by the second electrode pad (92).

[0051] The first electrode pad (91) and the second electrode pad (92) include metal materials such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), etc., or alloys thereof. The first electrode pad (91) and the second electrode pad (92) may be composed of a single layer or multiple layers. For example, the first electrode pad (91) or the second electrode pad (92) may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, a Cr / Al / Ti / Al / Ni / / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer. The first electrode pad (91) and the second electrode pad (92) can be used as current paths through which an external power source supplies current to the first semiconductor layer (21) and the second semiconductor layer (23).

[0052] The thickness of the first electrode pad (91) and the second electrode pad (92) is 1 to 100 μm, preferably 1.2 to 60 μm, and more preferably 1.5 to 6 μm.

[0053] FIG. 6 is a plan view of a light-emitting element (2) disclosed according to the present invention. FIG. 7 is a cross-sectional view along the cutting line E-E1-E2-E' of FIG. 6. FIG. 8 is a cross-sectional view along the cutting line F-F1-F2-F' of FIG. 6. FIG. 9 is a cross-sectional view along the cutting line G-G' of FIG. 6. FIG. 10 is a cross-sectional view along the cutting line H-H' of FIG. 6. Since the structure of the light-emitting element (2) is almost identical to that of the light-emitting element (1), the structures having the same name and symbol as the light-emitting element (2) of FIG. 6 to FIG. 10 and the light-emitting element (1) of FIG. 1 to FIG. 5 refer to the same structure, have the same material, or have the same function, so the description here is appropriately omitted or not repeated.

[0054] As illustrated in FIGS. 6 to 10, the light-emitting element (2) comprises: a substrate (10) including an upper surface (100); a plurality of light-emitting units (C1 to C6) located on the substrate (10), each comprising a first light-emitting unit (C1), a second light-emitting unit (C6), and / or one or more third light-emitting units (C2 to C5), each comprising a first semiconductor layer (201), an active layer (202), and a second semiconductor layer (203); an insulating layer (60) including a first insulating layer opening (601) and a second insulating layer opening (602) located on each of the plurality of light-emitting units (C1 to C6); and a first stretch electrode (7100) that covers the first light-emitting unit (C1), covers the first insulating layer opening (601) located on the first light-emitting unit (C1), but does not cover the second insulating layer opening (602) of the first light-emitting unit (C1). A second elongated electrode (7200) that covers a second light-emitting unit (C6), covers a second insulating layer opening (602) located in the second light-emitting unit (C6), but does not cover a first insulating layer opening (601) of the second light-emitting unit (C6); a first electrode pad (91) that covers a first portion of a plurality of light-emitting units (C1~C6); and a second electrode pad (92) that covers a second portion of a plurality of light-emitting units (C1~C6).

[0055] The light-emitting element (2) includes trenches (T12, T23, T34, T45, T56) that are located between two adjacent light-emitting units among a plurality of light-emitting units (C1~C6) and expose the upper surface (100) of the substrate (10). One or more current limiting layers (30) are located on the second semiconductor layer (203). The light-emitting element (2) includes a conductive layer (40) located on the second semiconductor layer (203) and / or the current limiting layer (30), and the conductive layer (40) covers the side wall of the current limiting layer (30). The light-emitting element (2) includes one or more first contact electrodes (51) each located in one or more recesses (200) of each of the plurality of light-emitting units (C1~C6) to contact the first semiconductor layer (201), and one or more second contact electrodes (52) each located on the second semiconductor layer (203) of each of the plurality of light-emitting units (C1~C6). The light-emitting element (2) includes an insulating layer (60) covering a semiconductor stack (20), and the insulating layer (60) includes one or more first insulating layer openings (601) exposing one or more first contact electrodes (51) and one or more second insulating layer openings (602) exposing one or more second contact electrodes (52).

[0056] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), as shown in FIG. 6, a first stretching electrode (7100) covering a first light-emitting unit (C1) is included, and the first stretching electrode (7100) covers a first insulating layer opening (601) located in the first light-emitting unit (C1) but does not cover a second insulating layer opening (602) of the first light-emitting unit (C1). The first stretching electrode (7100) contacts the first contact electrode (51) of the first light-emitting unit (C1) through the first insulating layer opening (601) of the first light-emitting unit (C1) and is electrically connected to the first semiconductor layer (201) of the first light-emitting unit (C1).

[0057] The light-emitting element (2) further includes a second stretching electrode (7200) covering the second light-emitting unit (C6), and the second stretching electrode (7200) covers the second insulating layer opening (602) located in the second light-emitting unit (C6) but does not cover the first insulating layer opening (601) of the second light-emitting unit (C6). The second stretching electrode (7200) contacts the second contact electrode (52) of the second light-emitting unit (C6) through the second insulating layer opening (602) of the second light-emitting unit (C6) and is electrically connected to the second semiconductor layer (203) of the second light-emitting unit (C6).

[0058] The light-emitting element (2) includes one or more connecting electrodes (71 to 75) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C6). The connecting electrodes (71 to 75) include a first connecting electrode (71), a second connecting electrode (72), a third connecting electrode (73), a fourth connecting electrode (74), and a fifth connecting electrode (75). The first connecting electrode (71), the second connecting electrode (72), the third connecting electrode (73), the fourth connecting electrode (74), and the fifth connecting electrode (75) each include a first electrical connecting part (712, 713, 714, 715, and 716), a bridge connecting part (701, 702, 703, 704, and 705), and a second electrical connecting part (721, 722, 723, 724, and 725).

[0059] In one embodiment of the present invention, as shown in FIGS. 6, 9 and 10, the light-emitting element (2) further comprises a first metal layer (7001) covering a first light-emitting unit (C1) and a plurality of third light-emitting units (C2~C3) and a second metal layer (7002) covering a second light-emitting unit (C6) and a plurality of third light-emitting units (C4~C5), and the first metal layer (7001) and the second metal layer (7002) are electrically insulated from the plurality of light-emitting units (C1~C6).

[0060] In one embodiment of the present invention, as illustrated in FIGS. 6, 9 and 10, the first metal layer (7001) and the second metal layer (7002) cover a portion of the first contact electrode (51) and the second contact electrode (52), but the formation positions of the first metal layer (7001) and the second metal layer (7002) are installed offset from the formation positions of the first insulating layer opening (601) and the second insulating layer opening (602). In other words, the first metal layer (7001) and the second metal layer (7002) do not have an overlapping portion with the first insulating layer opening (601) and the second insulating layer opening (602).

[0061] In one embodiment of the present invention, as shown in FIG. 6, a first metal layer (7001) covers a first trench (T12) between a first light-emitting unit (C1) and a third light-emitting unit (C2), and / or a second trench (T23) between two adjacent third light-emitting units (C2 and C3). A second metal layer (7002) covers a fourth trench (T45) between two adjacent third light-emitting units (C4 and C5), and / or a fifth trench (T56) between a third light-emitting unit (C5) and a second light-emitting unit (C6).

[0062] In one embodiment of the present invention, as shown in FIG. 6, when viewed in a plan view of the light-emitting element (2), the first metal layer (7001) includes a first metal surface area larger than the first stretching surface area of ​​the first stretching electrode (7100), and / or the second metal layer (7002) includes a second metal surface area larger than the second stretching surface area of ​​the second stretching electrode (7200).

[0063] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), a plurality of connecting electrodes (71-72) are located on both sides of the first stretching electrode (7100) and the first metal layer (7001), and / or a plurality of connecting electrodes (74-75) are located on both sides of the second stretching electrode (7200) and the second metal layer (7002).

[0064] The light-emitting element (2) includes a protective layer (80) covering a plurality of light-emitting units (C1 to C6), and the protective layer (80) includes one or more first protective layer openings (801) that expose a first stretching electrode (7100) and one or more second protective layer openings (802) that expose a second stretching electrode (7200).

[0065] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), as shown in FIG. 6, one or more first protective layer openings (801) are located only on the first stretching electrode (7100) of the first light-emitting unit (C1), and one or more second protective layer openings (802) are located only on the second stretching electrode (7200) of the second light-emitting unit (C6).

[0066] As illustrated in FIGS. 6, 7 and 8, the light-emitting element (2) includes a first electrode pad (91) that covers a first protective layer opening (801) and contacts a first stretching electrode (7100), and a second electrode pad (92) that covers a second protective layer opening (802) and contacts a second stretching electrode (7200).

[0067] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2) (not shown), the light-emitting element (2) includes a plurality of first protective layer openings (801), and the plurality of first protective layer openings (801) are each located on the first stretching electrode (7100) of the first light-emitting unit (C1) and the first metal layer (7001) of the plurality of third light-emitting units (C2~C3). The light-emitting element (2) includes a plurality of second protective layer openings (802), and the plurality of second protective layer openings (802) are each located on the second stretching electrode (7200) of the second light-emitting unit (C6) and the second metal layer (7002) of the plurality of third light-emitting units (C4~C5). The first electrode pad (91) covers the first protective layer opening (801) and contacts the first stretching electrode (7100) and the first metal layer (7001), and the second electrode pad (92) covers the second protective layer opening (802) and contacts the second stretching electrode (7200) and the second metal layer (7002).

[0068] In one embodiment of the present invention, as shown in FIG. 6, when viewed in a plan view of the light-emitting element (2), the first electrode pad (91) and the second electrode pad (92) do not cover one or more connecting electrodes (71 to 75).

[0069] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), as shown in FIG. 6, the first electrode pad (91) and the second electrode pad (92) do not cover the first insulating layer opening (601) and / or the second insulating layer opening (602).

[0070] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), as shown in FIG. 6, the first electrode pad (91) includes a first electrode pad area larger than the first surface area of ​​the first stretched electrode (7100), or the second electrode pad (92) includes a second electrode pad area larger than the second surface area of ​​the second stretched electrode (7200).

[0071] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (2), as shown in FIG. 6, the first electrode pad (91) includes a first electrode pad area larger than the first metal surface area of ​​the first metal layer (7001), or the second electrode pad (92) includes a second electrode pad area larger than the second metal surface area of ​​the second metal layer (7002).

[0072] In one embodiment of the present invention, as shown in FIG. 6, when viewed in a plan view of the light-emitting element (2), the first electrode pad (91) covers the first metal layer (7001) and the first stretched electrode (7100), and the second electrode pad (92) covers the second metal layer (7002) and the second stretched electrode (7200).

[0073] FIG. 11 is a plan view of a light-emitting element (3) disclosed according to the present invention. FIG. 12 is a cross-sectional view along the cutting line I-I1-I2-I3-I4-I' of FIG. 11. FIG. 13 is a cross-sectional view along the cutting line J-J5-J4-J3-J2-J1-J' of FIG. 11. FIG. 14 is a cross-sectional view along the cutting line K-K1-K2-K' of FIG. 11. Since the structure of the light-emitting element (3) is almost identical to that of the light-emitting element (1), the structures having the same name and symbol as the light-emitting element (3) of FIG. 11 to FIG. 14 and the light-emitting element (1) of FIG. 1 to FIG. 5 refer to the same structure, have the same material, or have the same function, so the description here is appropriately omitted or not repeated.

[0074] A light-emitting element (3) comprises: a substrate (10) including an upper surface (100); a plurality of light-emitting units (C1~C8) located on the upper surface (100) of the substrate (10) and including a first light-emitting unit (C1), a second light-emitting unit (C8) and / or a plurality of third light-emitting units (C2~C7), each including a first semiconductor layer (201), an active layer (202), and a second semiconductor layer (203); a first metal layer (7001a) covering the first light-emitting unit (C1) and a plurality of third light-emitting units (C2~C4) in a first portion; a second metal layer (7002a) covering the second light-emitting unit (C8) and a plurality of third light-emitting units (C5~C7) in a second portion; and a first electrode pad (91a) covering the first light-emitting unit (C1) and a plurality of third light-emitting units (C2~C4) in a first portion. and a second electrode pad (92a) covering a second light-emitting unit (C8) and a plurality of third light-emitting units (C5~C7) of the second part; wherein the first metal layer (7001a) and the second metal layer (7002a) are electrically insulated from the plurality of light-emitting units (C1~C8), and the plurality of third light-emitting units (C2~C4) of the first part and the plurality of third light-emitting units (C5~C7) of the second part each have the same number of light-emitting units.

[0075] In one embodiment, the first light-emitting unit (C1), the second light-emitting unit (C8), and / or a plurality of third light-emitting units (C2 to C7) are electrically connected in a series connection manner.

[0076] As illustrated in FIGS. 11 to 14, a plurality of light-emitting units (C1 to C8) of a light-emitting element (3) each include one or more concave portions (200a) and a semiconductor platform (204a), and the semiconductor platform (204a) is surrounded by a plurality of concave portions (200a). Specifically, the semiconductor platform (204a) has a structure including a first semiconductor layer (201), a second semiconductor layer (203), and an active layer (202). The concave portion (200a) exposes the surface of the first semiconductor layer (201).

[0077] The light-emitting element (3) includes trenches (T12, T23, T34, T45, T56, T67, and T78) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C8), and the trenches (T12, T23, T34, T45, T56, T67, and T78) expose the upper surface (100) of the substrate (10). As shown in FIG. 11, the light-emitting element (3) includes a first trench (T12) located between a first light-emitting unit (C1) and a third light-emitting unit (C2); a second trench (T23) located between two adjacent third light-emitting units (C2 and C3); a third trench (T34) located between two adjacent third light-emitting units (C3 and C4); and a fourth trench (T45) located between two adjacent third light-emitting units (C4 and C5). It includes a fifth trench (T56) located between the third light-emitting unit (C5) and the third light-emitting unit (C6); a sixth trench (T67) located between two adjacent third light-emitting units (C6 and C7); and a seventh trench (T78) located between the third light-emitting unit (C7) and the second light-emitting unit (C8).

[0078] The light-emitting element (3) includes a blocking layer (62a) covering the semiconductor stack (20) of each light-emitting unit (C1~C8), and the blocking layer (62a) includes one or more first blocking layer openings (621a) that expose the first semiconductor layer (201) of each light-emitting unit (C1~C8) and one or more second blocking layer openings (622a) that expose the second semiconductor layer (203) of each light-emitting unit (C1~C8).

[0079] As illustrated in FIGS. 12 to 14, the light-emitting element (3) comprises: a conductive layer (40) located within one or more second blocking layer openings (622a) of each of the plurality of light-emitting units (C1 to C8) and in contact with a second semiconductor layer (203); and a metal reflective layer (42a) located within one or more second blocking layer openings (622a) and in contact with the second semiconductor layer (203) and / or the conductive layer (40); wherein the metal reflective layer (42a) is located on the conductive layer (40) and covers the side wall of the conductive layer (40).

[0080] The material of the conductive layer (40) includes a material that is transparent to the light emitted by the active layer (202), for example, a metal material or a transparent conductive oxide. The transparent conductive oxide includes indium tin oxide (ITO) or indium zinc oxide (IZO). The material of the metal reflective layer (42a) includes a metal or an alloy thereof, such as aluminum (Al), silver (Ag), rhodium (Rh), or platinum (Pt). The metal reflective layer (42a) is intended to reflect light, so that the reflected light is emitted outwardly toward the substrate (10), and the reflected light is generated by the active layer (202) of each light-emitting unit (C1 to C8).

[0081] In one embodiment, a barrier layer (not shown) is formed on the metal reflective layer (42a) of each light-emitting unit (C1 to C8) to cover the upper surface and side surface of the metal reflective layer (42a), thereby preventing the surface of the metal reflective layer (42a) from oxidizing and the reflectivity of the metal reflective layer (42a) from deteriorating. The material of the barrier layer includes metal materials such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), chromium (Cr), platinum (Pt), etc., or alloys thereof. The barrier layer may be a single layer or a multilayer structure, and the multilayer structure is, for example, titanium (Ti) / aluminum (Al) and / or nickel titanium alloy (NiTi) / titanium tungsten alloy (TiW).

[0082] In one embodiment, the metal reflective layer (42a) of each light-emitting unit (C1 to C8) is formed directly on the second semiconductor layer (203), and a conductive layer (40) is formed on the metal reflective layer (42a) (not shown) so that the absorption rate of the conductive layer (40) for the light rays generated by the active layer (202) of each light-emitting unit (C1 to C8) is reduced. In one embodiment, the blocking layer (62a) covers the periphery of the metal reflective layer (42a) and the conductive layer (40) to protect the metal reflective layer (42a) and the conductive layer (40) from being affected by subsequent processes.

[0083] The light-emitting element (3) includes an insulating layer (60a) covering the semiconductor stack (20) of each light-emitting unit (C1 to C8), and the insulating layer (60a) includes one or more first insulating layer openings (601a) that expose the first semiconductor layer (201) of each light-emitting unit (C1 to C8) and one or more second insulating layer openings (602a) that expose the second semiconductor layer (203), conductive layer (40), or metal reflective layer (42a) of each light-emitting unit (C1 to C8).

[0084] In one embodiment, one or more first insulating layer openings (601a) are located at the outer edges of the light-emitting units (C1 to C8). Specifically, the semiconductor platform (204a) of each light-emitting unit (C1 to C8) is surrounded by one or more concave portions (200a), and one or more first insulating layer openings (601a) are located on one or more concave portions (200a) to expose the surface of the first semiconductor layer (201).

[0085] As illustrated in FIGS. 11 to 14, the light-emitting element (3) includes a first stretching electrode (7100a) covering a first light-emitting unit (C1), the first stretching electrode (7100a) covers one or more first insulating layer openings (601a) located in the first light-emitting unit (C1), and the first stretching electrode (7100a) contacts the first semiconductor layer (201) of the first light-emitting unit (C1) through one or more first insulating layer openings (601a). The light-emitting element (3) further includes a second stretching electrode (7200a) covering a second light-emitting unit (C8), the second stretching electrode (7200a) covers one or more second insulating layer openings (602a) located in the second light-emitting unit (C8), and the second stretching electrode (7200a) is electrically connected to the second semiconductor layer (203) of the second light-emitting unit (C8) by one or more second insulating layer openings (602a).

[0086] The light-emitting element (3) includes one or more connecting electrodes (71a to 77a) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C8). As shown in FIG. 11, the connecting electrodes (71a to 77a) include a first connecting electrode (71a), a second connecting electrode (72a), a third connecting electrode (73a), a fourth connecting electrode (74a), a fifth connecting electrode (75a), a sixth connecting electrode (76a), and a seventh connecting electrode (77a). The first connecting electrode (71a) is located between the first light-emitting unit (C1) and the third light-emitting unit (C2), the second connecting electrode (72a) is located between two adjacent third light-emitting units (C2 and C3), the third connecting electrode (73a) is located between two adjacent third light-emitting units (C3 and C4), the fourth connecting electrode (74a) is located between two adjacent third light-emitting units (C4 and C5), the fifth connecting electrode (75a) is located between two adjacent third light-emitting units (C5 and C6), the sixth connecting electrode (76a) is located between two adjacent third light-emitting units (C6 and C7), and the seventh connecting electrode (77a) is located between the third light-emitting unit (C7) and the second light-emitting unit (C8).

[0087] The first connecting electrode (71a), the second connecting electrode (72a), the third connecting electrode (73a), the fourth connecting electrode (74a), the fifth connecting electrode (75a), the sixth connecting electrode (76a) and the seventh connecting electrode (77a) each include a first electrical connecting portion (712a, 713a, 714a, 715a, 716a, 717a and 718a), a bridge connecting portion (701a, 702a, 703a, 704a, 705a, 706a and 707a), and a second electrical connecting portion (721a, 722a, 723a, 724a, 725a, 726a and 727a).

[0088] The first electrical connection portions (712a, 713a, 714a, 715a, 716a, 717a and 718a) of the connecting electrodes (71a~77a) are for contacting the first semiconductor layer (201) of each of the plurality of light-emitting units (C2~C8). The second electrical connection portions (721a, 722a, 723a, 724a, 725a, 726a and 727a) of the connecting electrodes (71a to 77a) are in contact with the metal reflective layer (42a) and / or barrier layer (not shown) and / or conductive layer (40) of each of the plurality of light-emitting units (C1 to C7), and are electrically connected to the second semiconductor layer (203) of each of the plurality of light-emitting units (C1 to C7) by the metal reflective layer (42a) and / or barrier layer (not shown) and / or conductive layer (40).

[0089] The bridge connection portions (701a, 702a, 703a, 704a, 705a, 706a and 707a) of the connecting electrodes (71a~77a) are each located on the trenches (T12, T23, T34, T45, T56, T67 and T78) and are intended to electrically connect two adjacent light-emitting units among a plurality of light-emitting units (C1~C8).

[0090] The light-emitting element (3) includes a protective layer (80a) covering a plurality of light-emitting units (C1 to C8), and the protective layer (80a) includes one or more first protective layer openings (801a) that expose a first stretching electrode (7100a) of a first light-emitting unit (C1) and one or more second protective layer openings (802a) that expose a second stretching electrode (7200a) of a second light-emitting unit (C8).

[0091] In one embodiment of the present invention, when viewed in a plan view of a light-emitting element (3) (not shown), a plurality of first protective layer openings (801a) are respectively located on the first stretching electrode (7100a) of a first light-emitting unit (C1) and the first metal layer (7001a) of a plurality of third light-emitting units (C2~C4), and / or a plurality of second protective layer openings (802a) are respectively located on the second stretching electrode (7200a) of a second light-emitting unit (C8) and / or the second metal layer (7002a) of a plurality of light-emitting units (C5~C7).

[0092] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the formation location of the first protective layer opening (801a) is installed offset from the first insulating layer opening (601a). The formation location of the second protective layer opening (802a) is installed offset from the second insulating layer opening (602a).

[0093] The light-emitting element (3) includes a first electrode pad (91a) that covers a first protective layer opening (801a) and contacts a first stretching electrode (7100a) located in a first light-emitting unit (C1), and a second electrode pad (92a) that covers a second protective layer opening (802a) and contacts a second stretching electrode (7200a) located in a second light-emitting unit (C8).

[0094] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the first electrode pad (91a) and the second electrode pad (92a) do not cover one or more connecting electrodes (71a to 77a).

[0095] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the first electrode pad (91a) and the second electrode pad (92a) do not cover the first insulating layer opening (601a) and / or the second insulating layer opening (602a).

[0096] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the first electrode pad (91a) covers the first metal layer (7001a), and / or the second electrode pad (92a) covers the second metal layer (7002a). As shown in FIG. 12 and FIG. 14, the protective layer (80a) is located between the first electrode pad (91a) and the first metal layer (7001a), and the protective layer (80a) is located between the second electrode pad (92a) and the second metal layer (7002a).

[0097] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, a plurality of connecting electrodes (71a to 74a) are located on both sides of the first electrode pad (91a), and / or a plurality of connecting electrodes (74a to 77a) are located on both sides of the second electrode pad (92a).

[0098] In one embodiment of the present invention, as shown in FIG. 11, when viewed in a plan view of the light-emitting element (3), the first electrode pad (91a) is each surrounded by a plurality of connecting electrodes (71a to 74a), and / or the second electrode pad (92a) is each surrounded by a plurality of connecting electrodes (74a to 77a).

[0099] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the first electrode pad (91a) includes a first electrode pad area larger than the first metal surface area of ​​the first metal layer (7001a), or the second electrode pad (92a) includes a second electrode pad area larger than the second metal surface area of ​​the second metal layer (7002a).

[0100] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (3), as shown in FIG. 11, the first quantity of a plurality of light-emitting units (C1~C8) covered by the first electrode pad (91a) is the same as or different from the second quantity of a plurality of light-emitting units (C1~C8) covered by the second electrode pad (92a).

[0101] FIG. 15 is a plan view of a light-emitting element (4) disclosed according to the present invention. FIG. 16 is a cross-sectional view along the cutting line L-L' of FIG. 15. Since the structure of the light-emitting element (4) is almost identical to that of the light-emitting element (1) and the light-emitting element (3), the structure having the same name and symbol as the light-emitting element (4) of FIG. 15 and FIG. 16, the light-emitting element (1) of FIG. 1 to FIG. 5, and the light-emitting element (3) of FIG. 11 to FIG. 14 refers to the same structure, has the same material, or has the same function, so the description is appropriately omitted or not repeated.

[0102] A light-emitting element (4) comprises a substrate (10) including an upper surface (100); a plurality of light-emitting units (C1~C7) located on the upper surface (100) of the substrate (10) and including a first light-emitting unit (C1), a second light-emitting unit (C7) and / or a plurality of third light-emitting units (C2~C6), each including a first semiconductor layer (201), an active layer (202), and a second semiconductor layer (203); a first metal layer (7001b) covering the first light-emitting unit (C1) and a plurality of third light-emitting units (C2~C4) in a first portion; a second metal layer (7002b) covering the second light-emitting unit (C7) and a plurality of third light-emitting units (C4~C6) in a second portion; and a first electrode pad (91b) covering the first light-emitting unit (C1) and a plurality of third light-emitting units (C2~C4) in a first portion. It includes a second electrode pad (92b) covering a second light-emitting unit (C7) and a plurality of third light-emitting units (C4~C6) of the second portion; and the first metal layer (7001b) and the second metal layer (7002b) are electrically connected to the plurality of light-emitting units (C1~C7).

[0103] In one embodiment, the first light-emitting unit (C1), the second light-emitting unit (C7), and / or a plurality of third light-emitting units (C2 to C6) are electrically connected in a series connection manner.

[0104] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the first light-emitting unit (C1), the second light-emitting unit (C7), and a plurality of third light-emitting units (C2 to C6) are arranged in a rectangle comprising a plurality of columns. The first light-emitting unit (C1) and the third light-emitting unit (C2) are arranged in a first column, the third light-emitting units (C3 to C5) are arranged in a second column, the second light-emitting unit (C7) and the third light-emitting unit (C6) are arranged in a third column, and the second column is located between the first column and the third column. The plurality of columns may include a different number of light-emitting units, for example, the number of light-emitting units located in the first column and the number of light-emitting units located in the second column are different.

[0105] As illustrated in FIGS. 15 to 16, a plurality of light-emitting units (C1 to C7) of the light-emitting element (4) each include one or more concave portions (200b) and semiconductor platforms (204b). Specifically, the semiconductor platform (204b) includes a structure of a first semiconductor layer (201), a second semiconductor layer (203), and an active layer (202). The concave portion (200b) exposes the surface of the first semiconductor layer (201).

[0106] The light-emitting element (4) includes trenches (T12, T23, T34, T45, T56, and T67) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C7), and trenches (T12, T23, T34, T45, T56, T67, and T78) expose the upper surface (100) of the substrate (10), trenches (T34) and (T45) are located on the same side of the third light-emitting unit (C4), and trenches (T34) and (T45) are directly connected. As shown in FIG. 15, the light-emitting element (4) includes a first trench (T12) located between the first light-emitting unit (C1) and the third light-emitting unit (C2); and a second trench (T23) located between two adjacent third light-emitting units (C2 and C3). It includes a third trench (T34) located between two adjacent third light-emitting units (C3 and C4); a fourth trench (T45) located between two adjacent third light-emitting units (C4 and C5); a fifth trench (T56) located between the third light-emitting unit (C5) and the third light-emitting unit (C6); and a sixth trench (T67) located between the third light-emitting unit (C6) and the second light-emitting unit (C7); wherein the third light-emitting unit (C3) and the third light-emitting unit (C5) are located on the same side of the third light-emitting unit (C4).

[0107] The light-emitting element (4) includes a blocking layer (62b) covering the semiconductor stack (20) of each light-emitting unit (C1 to C7), and the blocking layer (62b) includes one or more first blocking layer openings (621b) that expose the first semiconductor layer (201) of each light-emitting unit (C1 to C7) and one or more second blocking layer openings (622b) that expose the second semiconductor layer (203) of each light-emitting unit (C1 to C7).

[0108] As illustrated in FIGS. 15 to 16, the light-emitting element (4) comprises: a conductive layer (40) located within one or more second blocking layer openings (622b) of each plurality of light-emitting units (C1 to C7) and in contact with a second semiconductor layer (203); and a metal reflective layer (42b) located within one or more second blocking layer openings (622b) and in contact with the second semiconductor layer (203) and / or the conductive layer (40), wherein the metal reflective layer (42b) is located on the conductive layer (40) and covers the side wall of the conductive layer (40).

[0109] The light-emitting element (4) includes an insulating layer (60b) covering the semiconductor stack (20) of each light-emitting unit (C1 to C7), and the insulating layer (60b) includes one or more first insulating layer openings (601b) that expose the first semiconductor layer (201) of each light-emitting unit (C1 to C7) and one or more second insulating layer openings (602b) that expose the second semiconductor layer (203), conductive layer (40), or metal reflective layer (42b) of each light-emitting unit (C1 to C7).

[0110] In one embodiment, one or more first insulating layer openings (601b) are located at the outer edges of the light-emitting units (C1 to C7). Specifically, the semiconductor platform (204b) of each light-emitting unit (C1 to C7) is surrounded by one or more concave portions (200b), and one or more first insulating layer openings (601b) are located on one or more concave portions (200b) to expose the surface of the first semiconductor layer (201).

[0111] As illustrated in FIGS. 15 and 16, the light-emitting element (4) includes a first stretching electrode (7100b) covering one or more first insulating layer openings (601b) located in the first light-emitting unit (C1), and the first stretching electrode (7100b) contacts the first semiconductor layer (201) of the first light-emitting unit (C1) through one or more first insulating layer openings (601b). The light-emitting element (4) further includes a second stretching electrode (7200b) covering one or more second insulating layer openings (602b) located in the second light-emitting unit (C7), and the second stretching electrode (7200b) is electrically connected to the second semiconductor layer (203) of the second light-emitting unit (C7) through one or more second insulating layer openings (602b).

[0112] The light-emitting element (4) includes one or more connecting electrodes (71b to 76b) located between two adjacent light-emitting units among a plurality of light-emitting units (C1 to C7). As shown in FIG. 15, the connecting electrodes (71b to 76b) include a first connecting electrode (71b), a second connecting electrode (72b), a third connecting electrode (73b), a fourth connecting electrode (74b), a fifth connecting electrode (75b), and a sixth connecting electrode (76b). The first connecting electrode (71b) is located between the first light-emitting unit (C1) and the third light-emitting unit (C2), the second connecting electrode (72b) is located between two adjacent third light-emitting units (C2 and C3), the third connecting electrode (73b) is located between two adjacent third light-emitting units (C3 and C4), the fourth connecting electrode (74b) is located between two adjacent third light-emitting units (C4 and C5), the fifth connecting electrode (75b) is located between two adjacent third light-emitting units (C5 and C6), and the sixth connecting electrode (76b) is located between the third light-emitting unit (C6) and the second light-emitting unit (C7).

[0113] The first connecting electrode (71b), the second connecting electrode (72b), the third connecting electrode (73b), the fourth connecting electrode (74b), the fifth connecting electrode (75b), and the sixth connecting electrode (76b) each include a first electrical connecting portion (712b, 713b, 714b, 715b, 716b, and 717b), a bridge connecting portion (701b, 702b, 703b, 704b, 705b, and 706b), and a second electrical connecting portion (721b, 722b, 723b, 724b, 725b, and 726b).

[0114] The first electrical connection portions (712b, 713b, 714b, 715b, 716b, and 717b) of the connecting electrodes (71b to 76b) are intended to contact the first semiconductor layer (201) of each of the plurality of light-emitting units (C2 to C7). The second electrical connection portions (721b, 722b, 723b, 724b, 725b, and 726b) of the connecting electrodes (71b to 77b) are intended to contact the metal reflective layer (42b) and / or barrier layer (not shown) of each of the plurality of light-emitting units (C1 to C6) so as to be electrically connected to the second semiconductor layer (203) of each of the plurality of light-emitting units (C1 to C7) by the metal reflective layer (42b) and / or barrier layer (not shown).

[0115] The bridge connection portions (701b, 702b, 703b, 704b, 705b, and 706b) of the connecting electrodes (71b~76b) are each located in trenches (T12, T23, T34, T45, T56, and T67) and are intended to electrically connect two adjacent light-emitting units among a plurality of light-emitting units (C1~C7).

[0116] The first metal layer (7001, 7001a, 7001b), the first stretching electrode (7100a, 7100b), the second metal layer (7002, 7002a, 7002b), the second stretching electrode (7200a, 7200b), and the connecting electrodes (71a~77a, 71b~76b) include metal materials such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), etc., or alloys thereof. The first metal layer (7001, 7001a, 7001b), the first stretched electrode (7100a, 7100b), the second metal layer (7002, 7002a, 7002b), the second stretched electrode (7200a, 7200b), and the connecting electrode (71a~77a, 71b~76b) may be composed of a single layer or multiple layers. For example, the first metal layer (7001, 7001a, 7001b), the first stretched electrode (7100a, 7100b), the second metal layer (7002, 7002a, 7002b), the second stretched electrode (7200a, 7200b) and / or the connecting electrode (71a~77a, 71b~76b) may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer.

[0117] The light-emitting element (4) includes a protective layer (80b) covering a plurality of light-emitting units (C1 to C7), and the protective layer (80b) includes one or more first protective layer openings (801b) that expose a first stretching electrode (7100b) of a first light-emitting unit (C1) and one or more second protective layer openings (802b) that expose a second stretching electrode (7200b) of a second light-emitting unit (C8).

[0118] In one embodiment of the present invention, when viewed in a plan view of a light-emitting element (4) (not shown), a plurality of first protective layer openings (801b) are each located on the first stretching electrode (7100a) of a first light-emitting unit (C1) and the first metal layer (7001b) of a plurality of third light-emitting units (C2~C4), and / or a plurality of second protective layer openings (802b) are each located on the second stretching electrode (7200b) of a second light-emitting unit (C7) and the second metal layer (7002b) of a plurality of light-emitting units (C4~C6).

[0119] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the formation location of the first protective layer opening (801b) is installed offset from the first insulating layer opening (601b). The formation location of the second protective layer opening (802b) is installed offset from the second insulating layer opening (602b).

[0120] The blocking layer (62a, 62b), insulating layer (60a, 60b), and protective layer (80a, 80b) are formed of a non-conductive material and include organic materials, inorganic materials, or dielectric materials. Organic materials include Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin copolymer (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. Inorganic materials include silicone or glass. Dielectric materials include aluminum oxide (Al2O3) and silicon nitride (SiN2). x ), silicon oxide (SiO₂ x ), titanium oxide (TiO₂ x ) or magnesium fluoride (MgF x Includes ).

[0121] The blocking layer (62a, 62b), insulating layer (60a, 60b), and / or protective layer (80a, 80b) may comprise two or more materials with different refractive indices and may be alternately stacked to form a dispersed Bragg reflector (DBR) structure, which can selectively reflect light of a specific wavelength. For example, layers such as SiO2 / TiO2 or SiO2 / Nb2O5 may be stacked to form an insulating reflective layer with high reflectivity.

[0122] The light-emitting element (4) includes a first electrode pad (91b) that covers a first protective layer opening (801b) and contacts a first stretching electrode (7100b) of a first light-emitting unit (C1), and a second electrode pad (92b) that covers a second protective layer opening (802b) and contacts a second stretching electrode (7200b) of a second light-emitting unit (C7).

[0123] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the first electrode pad (91b) and the second electrode pad (92b) do not cover one or more connecting electrodes (71b to 76b).

[0124] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the first electrode pad (91b) and the second electrode pad (92b) do not cover the first insulating layer opening (601b) and / or the second insulating layer opening (602b).

[0125] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the first electrode pad (91b) covers the first metal layer (7001b), and / or the second electrode pad (92b) covers the second metal layer (7002b). As shown in FIG. 15 and FIG. 16, the protective layer (80b) is located between the first electrode pad (91b) and the first metal layer (7001b), and the protective layer (80b) is also located between the second electrode pad (92b) and the second metal layer (7002b).

[0126] In one embodiment of the present invention, as shown in FIG. 15, when viewed in a plan view of the light-emitting element (4), the first metal layer (7001b) and the second metal layer (7002b) cover the same third light-emitting unit (C4).

[0127] In one embodiment of the present invention, as shown in FIG. 15, when viewed in a plan view of the light-emitting element (4), a plurality of connecting electrodes (71b to 73b) are located on both sides of the first electrode pad (91b), and / or a plurality of connecting electrodes (74b to 76b) are located on both sides of the second electrode pad (92b).

[0128] In one embodiment of the present invention, as shown in FIG. 15, when viewed in a plan view of the light-emitting element (4), the first electrode pad (91b) is each surrounded by a plurality of connecting electrodes (71b to 73b), and / or the second electrode pad (92b) is each surrounded by a plurality of connecting electrodes (74b to 76b).

[0129] In one embodiment of the present invention, when viewed in a plan view of the light-emitting element (4), as shown in FIG. 15, the first electrode pad (91b) includes a first electrode pad area larger than the first metal surface area of ​​the first metal layer (7001b), or the second electrode pad (92b) includes a second electrode pad area larger than the second metal surface area of ​​the second metal layer (7002b).

[0130] In one embodiment of the present invention, as shown in FIG. 15 when viewed in a plan view of the light-emitting element (4), the light-emitting element (4) includes an odd number of light-emitting units (C1 to C7). The first number of light-emitting units (C1 to C7) covered by the first electrode pad (91b) is equal to the second number of light-emitting units (C1 to C7) covered by the second electrode pad (92b), and the first electrode pad (91b) and the second electrode pad (92b) cover the same light-emitting unit (e.g., the third light-emitting unit (C4)).

[0131] The first electrode pad (91a, 91b) and the second electrode pad (92a, 92b) include metal materials such as chromium (Cr), titanium (Ti), tungsten (W), gold (Au), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), etc., or alloys thereof. The first electrode pad (91a, 91b) and the second electrode pad (92a, 92b) may be composed of a single layer or multiple layers. For example, the first electrode pad (91a, 91b) or the second electrode pad (92a, 92b) may include a Ti / Au layer, a Ti / Pt / Au layer, a Cr / Au layer, a Cr / Pt / Au layer, a Ni / Au layer, a Ni / Pt / Au layer, or a Cr / Al / Cr / Ni / Au layer. The first electrode pad (91a, 91b) and the second electrode pad (92a, 92b) can be used as current paths for an external power source to supply current to the first semiconductor layer (201) and the second semiconductor layer (203).

[0132] The thickness of the first electrode pad (91a, 91b) and the second electrode pad (92a, 92b) is 1 to 100 μm, preferably 1.2 to 60 μm, and more preferably 1.5 to 6 μm.

[0133] FIG. 17 is a schematic diagram of a light-emitting device (5) according to an embodiment of the present invention. The light-emitting elements (1, 2, 3, 4) of the above-described embodiment are installed in a flip-chip format on the first pad (511) and the second pad (512) of a packaging substrate (51). The first pad (511) and the second pad (512) are electrically insulated from each other by an insulating portion (53) containing an insulating material. The flip-chip is installed with the growth substrate side relative to the electrode pad forming surface facing upward as the main light extraction surface. To increase the light extraction efficiency of the light-emitting device (5), a reflective structure (54) may be installed around the light-emitting elements (1, 2, 3, 4).

[0134] FIG. 18 is a schematic diagram of a light-emitting device (6) according to one embodiment of the present invention. The light-emitting device (6) is a light bulb lamp and includes a lampshade (603), a reflector (604), a light-emitting module (610), a lamp base (612), a heat sink (614), a connecting part (616), and an electrical connecting element (618). The light-emitting module (610) includes a carrier part (606) and a plurality of light-emitting units (608) located on the carrier part (606), and the plurality of light-emitting bodies (608) may be light-emitting elements (1, 2, 3, 4) or a light-emitting device (5) of the above-described embodiment.

[0135] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of the invention. Any obvious modification or alteration to the invention does not depart from the spirit and scope of the invention. Explanation of the symbols

[0136] 1, 2, 3, 4 light-emitting elements 10 substrates 100 upper surface 20 semiconductor stacking 200, 200a, 200b Concave part 204, 204a, 204b semiconductor platform 201 First semiconductor layer 202 active layer 203 Second semiconductor layer 30 current limiting layer 40 Challenge Floors 42a, 42b Metal reflective layer 51 First contact electrode 52 Second contact electrode 511 1st Pad 512 2nd Pad 53 Insulation section 54 Reflective structure 60, 60a, 60b insulation layers 62a, 62b blocking layer 601, 601a, 601b First insulation layer opening 602, 602a, 602b Second insulation layer opening 621a, 621b First barrier layer opening 622a, 622b Second barrier layer opening 603 Lampshade 604 mirror 606 Carrier Section 608 light emitter 610 light-emitting module 612 Lamp Base 614 heatsink 616 connection 618 Electrical connection elements 71, 71a, 71b First connecting electrode 72, 72a, 72b second connecting electrode 73, 73a, 73b third connecting electrode 74, 74a, 74b 4th connecting electrode 75, 75a, 75b 5th connecting electrode 76a, 76b 6th connecting electrode 77a 7th connecting electrode 701, 702, 703, 704, 705 Bridge Connection 701a, 702a, 703a, 704a, 705a, 706a, 707a Bridge connection 701b, 702b, 703b, 704b, 705b, 706b bridge connection 712, 713, 714, 715, 716 First electrical connection 712a, 713a, 714a, 715a, 716a, 717a, 718a First electrical connection 712b, 713b, 714b, 715b, 716b, 717b First electrical connection 721, 722, 723, 724, 725 Second electrical connection part 721a, 722a, 723a, 724a, 725a, 726a, 727a Second electrical connection part 721b, 722b, 723b, 724b, 725b, 726b Second electrical connection 7001, 7001a, 7001b First metal layer 7002, 7002a, 7002b Second metal layer 7100, 7100a, 7100b First stretching electrode 7200, 7200a, 7200b Second stretching electrode 80, 80a, 80b protective layer 801, 801a, 801b First protective layer opening 802, 802a, 802b Second protective layer opening 91, 91a, 91b First electrode pad 92, 92a, 92b Second electrode pad C1~C8 light-emitting units T12 1st Trench T23 2nd Trench T34 3rd Trench T45 4th Trench T56 5th Trench T67 6th Trench T78 7th Trench

Claims

Claim 1 A light-emitting device comprising: a substrate including an upper surface; a plurality of light-emitting units located on the substrate and each including a first light-emitting unit and a second light-emitting unit, each including a first semiconductor layer, an active layer, and a second semiconductor layer; an insulating layer including a first insulating layer opening and a second insulating layer opening located in each of the plurality of light-emitting units; a first stretch electrode covering the first light-emitting unit, covering the first insulating layer opening located in the light-emitting unit but not covering the second insulating layer opening of the first light-emitting unit; a second stretch electrode covering the second light-emitting unit, covering the second insulating layer opening located in the second light-emitting unit but not covering the first insulating layer opening of the second light-emitting unit; a first electrode pad covering a part of the plurality of light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units; wherein the first electrode pad is connected to the first stretch electrode and does not cover the first insulating layer opening. Claim 2 A light-emitting element according to claim 1, further comprising one or more connecting electrodes located between two adjacent light-emitting units among the plurality of light-emitting units, wherein the plurality of connecting electrodes are located on both sides of the first stretching electrode or on both sides of the second stretching electrode. Claim 3 A light-emitting element according to claim 1, wherein the plurality of light-emitting units further include a third light-emitting unit. Claim 4 A light-emitting element according to paragraph 3, wherein the first stretching electrode covers a part of the first light-emitting unit and the plurality of third light-emitting units, and the second stretching electrode covers another part of the second light-emitting unit and the plurality of third light-emitting units. Claim 5 A light-emitting element according to claim 3, further comprising: a first metal layer covering a portion of the first light-emitting unit and the plurality of third light-emitting units; and a second metal layer covering another portion of the second light-emitting unit and the plurality of third light-emitting units, wherein the first metal layer and the second metal layer do not overlap with the first insulating layer opening and the second insulating layer opening. Claim 6 In claim 5, the light-emitting element, when viewed in a plan view of the light-emitting element, the first metal layer comprises a first metal surface area larger than the first stretched surface area of ​​the first stretched electrode. Claim 7 A light-emitting element according to claim 5, wherein the second metal layer comprises a second metal surface area larger than the second stretched surface area of ​​the second stretched electrode. Claim 8 A light-emitting device according to claim 1, further comprising a first contact electrode located in each of the plurality of light-emitting units and a second contact electrode located in each of the plurality of light-emitting units, wherein the first contact electrode is in direct contact with the first semiconductor layer of each of the plurality of light-emitting units and the second contact electrode is located on the second semiconductor layer of each of the plurality of light-emitting units. Claim 9 A light-emitting element according to claim 1, wherein the second electrode pad is connected to the second stretching electrode and does not cover the second insulating layer opening. Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 delete Claim 14 delete Claim 15 delete Claim 16 delete Claim 17 delete Claim 18 delete Claim 19 delete Claim 20 delete Claim 21 delete Claim 22 delete Claim 23 delete Claim 24 delete

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