Glass substrate processing apparatus and method

Abstract

The present invention relates to a glass substrate processing apparatus and method, comprising a laser beam irradiation unit that irradiates a laser beam onto a workpiece through which the laser beam passes; an optical unit that forms residual thermal stress inside the workpiece to increase the reaction speed during etching by locally irradiating the surface and interior of the workpiece by adjusting the shape and size of the laser beam to the size and shape required for processing; a laser beam adjustment unit that adjusts the energy intensity and beam mode of the laser beam; and an etching processing unit that processes a through hole by etching and removing a processing area in which residual thermal stress is generated by the laser beam in the workpiece. By providing a configuration such that a laser beam is irradiated onto a workpiece in an amorphous state or amorphous material to form a fine through hole, and the workpiece is etched through a chemical reaction using a reaction solution, the through hole can be finely processed into a desired shape without cracking or damage to the workpiece.

Description

Technology Field

[0001] The present invention relates to an apparatus for processing a glass substrate, and more specifically, to a glass substrate processing apparatus and method for processing holes in a non-crystalline object to be processed, such as a glass substrate, using a laser beam. Background Technology

[0002] Generally, transparent ceramic materials such as glass, quartz, and sapphire have characteristics such as brittleness, chemical resistance, amorphousness, and non-conductivity, which severely limits microfabrication methods; in particular, for micro-shapes, only a few processing processes, such as laser processing using microwave laser beams, have been applied.

[0003] Conventionally, a method of micro-processing is used in which grooves or cracks are processed by irradiating a ceramic material with a laser, and the processed area is etched using a reaction solution.

[0004] For example, Patent Document 1 below discloses a processing method in which a laser wet back etching process is used in the processing of a glass shape, wherein a laser irradiated through the glass working material heats a metal ion electrolyte located on the back surface of the working material to indirectly process the working material.

[0005] Patent Document 2 below describes a configuration of a glass shape processing device that, when indirectly processing glass using a laser, sets the laser irradiation path in point units or line units, sets the point units or line units to be randomly distributed to prevent the setting of a repeating irradiation path of a specific pattern, and reduces the interaction between the laser and bubbles to increase processing precision.

[0006] However, even with laser processing, the development of effective processing methods for ceramic materials is not easy due to problems such as the occurrence of cracks or increased shape errors.

[0007] Accordingly, the applicant has disclosed in the following patent document 3 a technology for a laser-based micro-processing apparatus and method for finely processing a transparent ceramic material into a desired shape without damage using a laser and an etching method, and has filed and registered a patent application.

[0008] However, Patent Document 3 had a problem in that it was difficult to apply to non-crystalline or non-crystalline processing objects such as glass.

[0009] Therefore, there is a need for the development of technology to micro-machine through-holes in amorphous or non-crystalline workpieces, such as glass substrates, using laser beams and etching methods. Prior art literature

[0010] Republic of Korea Patent Registration No. 10-1625948 (Published May 31, 2016) Republic of Korea Patent Registration No. 10-2382471 (Published April 4, 2022) Republic of Korea Patent Registration No. 10-2459645 (Published October 28, 2022 The problem to be solved

[0011] The objective of the present invention is to solve the problems described above by providing a glass substrate processing apparatus and method that can process a workpiece in an amorphous or non-crystalline state, such as a glass substrate, by irradiating it with a laser beam and using an etching solution to finely form through holes in a desired shape without damaging the workpiece.

[0012] Another objective of the present invention is to provide a glass substrate processing apparatus and method capable of processing through holes of the same diameter on the surface and / or inside of a workpiece while suppressing the occurrence of cracks or damage to the workpiece. means of solving the problem

[0013] To achieve the above-mentioned purpose, the glass substrate processing apparatus according to the present invention comprises: a laser beam irradiation unit that irradiates a laser beam onto a workpiece through which the laser beam passes; an optical unit that forms residual thermal stress inside the workpiece to increase the reaction speed during etching processing by locally irradiating the surface and interior of the workpiece by adjusting the size and shape of the laser beam so that the cross-section becomes a circular shape; a laser beam adjustment unit that adjusts the energy intensity and beam mode of the laser beam; and an etching processing unit that processes a through hole by etching and removing a processing area in which residual thermal stress is generated by the laser beam in the workpiece.

[0014] In addition, to achieve the above-mentioned purpose, the glass substrate processing method according to the present invention comprises: (a) a step of irradiating a laser beam onto a workpiece through which the laser beam passes in a laser beam irradiation unit; (b) a step of locally irradiating the surface and interior of the workpiece by adjusting the size and shape of the laser beam in an optical unit so that the cross-section of the laser beam becomes a circular shape, thereby forming residual thermal stress inside the workpiece to increase the reaction speed during etching; (c) a step of adjusting the energy intensity and beam mode of the laser beam in a laser beam adjustment unit; and (d) a step of processing a through hole by etching and removing the processing area where residual thermal stress is generated in the workpiece irradiated with the laser beam in an etching processing unit. Effects of the invention

[0015] As described above, according to the glass substrate processing apparatus and method of the present invention, a laser beam is irradiated onto a workpiece in an amorphous state to form a fine through-hole, and through etching is performed using a reaction solution to finely process the through-hole into a desired shape without cracking or damage to the workpiece, thereby obtaining the effect of finely processing the through-hole into a desired shape.

[0016] And according to the present invention, the effect is obtained that a through hole can be machined with a desired diameter and a circular shape on the surface and / or inside of a workpiece while suppressing the occurrence of cracks or damage to the workpiece.

[0017] Accordingly, according to the present invention, through holes are machined in a fine shape into a workpiece in an amorphous or non-crystalline state, such as a glass substrate, silicon, or ceramic, and the effect is obtained that it can be applied to various products such as semiconductors and display panels. Brief explanation of the drawing

[0019] FIG. 1 is a configuration diagram of a glass substrate through-hole processing device according to a preferred embodiment of the present invention; FIG. 2 is a process diagram explaining the processing method of a glass substrate processing device according to a preferred embodiment of the present invention in steps; FIG. 3 and FIG. 4 are drawings illustrating the processing state of a processing object at each step shown in FIG. 2; FIG. 5 and FIG. 6 are drawings illustrating the upper and lower ends of a through-hole processed in a processing object, respectively; FIG. 7 and FIG. 8 are drawings illustrating cross-sections of a through-hole processed under different conditions, respectively; FIG. 9 is a drawing illustrating the upper and lower ends of a through-hole shown in FIG. 8. Specific details for implementing the invention

[0020] A glass substrate processing apparatus and method according to a preferred embodiment of the present invention will be described in detail below with reference to the attached drawings.

[0022] FIG. 1 is a diagram showing the configuration of a glass substrate through-hole processing device according to a preferred embodiment of the present invention.

[0023] Hereinafter, terms indicating directions such as 'left', 'right', 'forward', 'rear', 'upward', and 'downward' are defined as indicating the respective directions based on the state depicted in each drawing.

[0024] In this embodiment, a configuration of a glass micro-processing apparatus and method for forming fine-shaped through-holes on the surface and / or inside a glass substrate as a workpiece having a certain area and thickness is described.

[0025] Of course, it should be noted that the present invention is not necessarily limited thereto and may be modified to process objects of various materials, such as plastics, polymers, silicon, and ceramics, which are amorphous materials or non-crystalline materials.

[0026] In this embodiment, a laser beam is irradiated onto a workpiece in an amorphous or non-crystalline state (hereinafter referred to as the "amorphous state"), and residual thermal stress is formed on the surface and inside the workpiece irradiated with the laser beam to prevent or minimize cracking in the workpiece, and fine through holes are machined on the surface and inside the workpiece, and then the machined area is removed at high speed through etching, in which a chemical reaction occurs using a reaction solution such as a strong acid or strong basic chemical.

[0027] In other words, when a laser beam with a set energy intensity and beam mode per unit volume is irradiated onto a non-crystalline workpiece through which the laser beam can pass, the surface and / or interior of the material absorb the laser beam's energy, causing residual thermal stress.

[0028] Generally, strong acids and strong bases used as reaction solutions remove processed areas very slowly in crystallized materials due to very slow chemical reactions.

[0029] On the other hand, in the case of a non-crystallized workpiece, the area where residual thermal stress occurs can be removed very quickly at high speed by chemical reaction with a strong acid or strong base during etching.

[0030] These differences in reaction rates vary depending on the material of the workpiece, the type and concentration of chemicals used as the reaction solution, and the process, but can range from several times to tens of thousands of times.

[0031] Accordingly, the present invention can form fine through holes by irradiating a laser beam onto a workpiece in an amorphous state or amorphous material, and then etch it through a chemical reaction using a reaction solution to process through holes of a desired shape and size at high speed.

[0032] In addition, the present invention can machine through holes of the same diameter on the surface and / or inside of a workpiece while suppressing the occurrence of cracks or damage to the workpiece.

[0033] To this end, a glass substrate processing device (10) according to a preferred embodiment of the present invention, as shown in FIG. 1, comprises a laser beam irradiation unit (20) that irradiates a laser beam onto a workpiece (11) through which the laser beam passes; an optical unit (30) that forms residual thermal stress inside the workpiece (11) to increase the reaction speed during etching processing by locally irradiating the surface and interior of the workpiece (11) by adjusting the size and shape of the laser beam to the size and shape required for processing; a laser beam adjustment unit (40) that adjusts the energy intensity and beam mode of the laser beam; and an etching processing unit (50) that processes a through hole by etching and removing the processing area where residual thermal stress is generated by the laser beam in the workpiece (11).

[0034] In addition, the glass substrate processing device (10) according to a preferred embodiment of the present invention may further include a transfer unit (60) that moves a laser beam according to the processing conditions of the workpiece (11), that is, the shape, specifications, position, etc. of the through hole (12) to be processed, and a control unit (70) that controls the operation of each device.

[0035] The transfer unit (60) functions to move the laser beam output through the optical unit (30) according to the shape and position to be processed.

[0036] To this end, the transfer unit (60) may be configured to move only the optical unit (30), or to move the laser beam irradiation unit (20), the optical unit (30), and the laser beam adjustment unit (40) as a whole.

[0037] The control unit (70) generates a control signal to control the operation of the laser beam irradiation unit (20), the optical unit (30), and the laser beam adjustment unit (40) so as to adjust the size and shape, irradiation period, pulse width, energy intensity, and beam mode of the laser beam according to the processing conditions of the workpiece (11), that is, the shape, size, and position of the through hole to be processed.

[0038] Then, the laser beam adjustment unit (40) can drive the laser beam irradiation unit (20) and the optical unit (30) according to the control signal of the control unit (70).

[0039] An optical part that forms residual thermal stress inside a workpiece to increase the reaction speed during etching by adjusting the size and shape of the laser beam to the size and shape required for processing and locally irradiating the surface and interior of the workpiece,

[0040] The laser beam irradiation unit (20) may be provided as a laser beam generator that generates a laser beam according to a control signal of the control unit (60).

[0041] The optical unit (30) may include one or more lenses that focus a laser beam generated from a laser beam irradiation unit (21) and irradiate it toward a workpiece (11), and adjust the size and shape of the laser beam.

[0042] Therefore, the laser beam can be irradiated locally on the surface and interior of the workpiece (11) through which the laser beam can pass, and can have a very short pulse width with high energy per unit volume to form residual thermal stress inside the workpiece.

[0043] For example, a laser beam is about 10 -4 second to 10 -15 A pulse width of seconds and approximately 10μJ to 100μJ / μm 3 It can be irradiated with energy and form localized residual thermal stress inside the workpiece (11) without penetrating the workpiece (11).

[0044] Of course, the laser beam can be adjusted according to various conditions such as the material, thickness, and size of the workpiece (11) so that it can form localized residual thermal stress inside the workpiece (11), with the energy per unit volume and pulse width being adjusted.

[0045] The etching processing unit (50) may include a chemical reaction furnace that processes the through hole by chemical reaction by applying an etching solution to the workpiece (11) in various ways, such as immersing the workpiece (11) in the etching solution or spraying it.

[0046] The above chemical reactor may include one or more of the following: an ultrasonic vibrator (51) that is driven by the control of a control unit (70) to apply ultrasonic vibration to a workpiece (11); a heater (52) that heats the workpiece (11) and the etching solution to control the etching processing speed and the diameter of the middle part of the through hole (11); a bubble generator (53) that generates gas bubbles inside the etching solution; and a filter (54) that removes by-products contained in the etching solution circulating inside the chemical reactor to prevent by-products from adsorbing on the workpiece (11) and the through hole (12) or the etching solution from being applied locally unevenly, thereby creating the through hole (12) uniformly.

[0047] According to the experimental results, the higher the temperature of the workpiece (11) and the etching solution, the faster the etching speed, and the smaller the size of the hole in the middle part compared to the upper and lower parts of the workpiece (11).

[0048] On the other hand, when the temperature of the workpiece (11) and the etching solution is lowered, the etching speed slows down, and the holes in the upper, lower, and middle parts of the workpiece (11) become almost identical.

[0049] Accordingly, in this embodiment, by driving the heater (52) to heat the workpiece (11) and the etching solution and controlling the temperature, the etching speed and the upper, lower, and middle diameters of the through hole (12) can be appropriately controlled.

[0050] In addition, in this embodiment, by-products of the circulating etching solution, such as glass powder separated from the workpiece (11) by a laser beam, can be filtered and removed using a filter (54).

[0051] Accordingly, in this embodiment, by using a filter (54) to purify the etching, preventing by-products from adsorbing around the workpiece (11) and the through hole (12), and preventing the etching solution from being applied unevenly in a localized manner, the etching can be performed uniformly to create a uniform through hole.

[0052] In addition, in this embodiment, cracks formed around the through hole by etching can be removed so that the through hole can be formed without cracks.

[0054] Next, a processing method of a glass substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to FIGS. 2 to 9.

[0055] FIG. 2 is a process diagram illustrating, step-by-step, a processing method of a glass substrate processing apparatus according to a preferred embodiment of the present invention, and FIG. 3 and FIG. 4 are drawings illustrating the processing state of a processing object at each step shown in FIG. 2. FIG. 5 and FIG. 6 are drawings illustrating the upper and lower ends of a through hole processed in a processing object, respectively. FIG. 7 and FIG. 8 are drawings illustrating cross-sections of a through hole processed under different conditions, respectively, and FIG. 9 is a drawing illustrating the upper and lower ends of a through hole shown in FIG. 8.

[0056] Figure 3 shows a state in which a laser beam is irradiated onto a workpiece, and Figure 4 shows a state in which a through hole is formed in the workpiece by etching.

[0057] A processing method of a glass substrate processing apparatus according to a preferred embodiment of the present invention is

[0058] (a) A step of irradiating a laser beam onto a workpiece (11) through which the laser beam passes from a laser beam irradiation unit (20),

[0059] (b) A step of locally irradiating the surface and interior of the workpiece (11) by adjusting the size and shape of the laser beam in the optical unit (30) to the size and shape required for processing, and forming residual thermal stress inside the workpiece (11) to increase the reaction speed during etching,

[0060] (c) a step of adjusting the energy intensity and beam mode of the laser beam in the laser beam adjustment unit (40) and

[0061] (d) The step of etching and removing the area where residual thermal stress occurred in the workpiece (11) irradiated with the laser beam in the etching processing section (50) to process the through hole (12).

[0062] To explain in detail, in step S10 of FIG. 2, the laser beam irradiation unit (20) generates a laser beam and, as shown in FIG. 3, locally irradiates the laser beam onto the surface and interior of the non-crystalline or non-crystalline workpiece (11) through which the laser beam passes.

[0063] At this time, the laser beam can be irradiated to correspond to the shape and size, irradiation period, pulse width, energy intensity, beam mode, and time of the laser beam set according to the initial processing conditions of the workpiece (11).

[0064] Next, the control unit (70) generates a control signal corresponding to the processing conditions of the workpiece (11), that is, the shape and size of the through hole (12) to be processed, and transmits it to the laser beam adjuster (40), and the laser beam adjuster (40) controls the operation of the laser beam irradiation unit (20) and the optical unit (30) according to the control signal.

[0065] In step S12, the optical unit (30) adjusts the size and shape of the laser beam, and in step S14, the laser beam adjustment unit (40) adjusts the energy intensity and beam mode of the laser beam.

[0066] At this time, the optical unit (30) can adjust the shape and size of the laser beam by driving the lens and mirror provided inside.

[0067] Here, the through hole (12) may be formed with a cross-section that is approximately circular, or may be formed with various shapes such as a cross-section that is approximately elliptical or polygonal, in addition to a circular shape.

[0068] And the laser beam adjustment unit (40) increases or decreases the energy intensity of the laser beam and adjusts the beam mode according to the state in which the through hole (12) is processed in the workpiece (11).

[0069] At this time, the laser beam adjustment unit (40) can selectively apply one or more beam modes among a Gaussian mode using a general Gaussian distribution and a left-right symmetric mode having an output distribution that is symmetric with respect to a cutting line.

[0070] Accordingly, the laser beam is locally irradiated on the surface and interior of the workpiece (11), and a through hole (12) is formed inside the workpiece (11) by the laser beam.

[0071] At this time, the through hole (12) formed by the laser beam can be formed with a diameter smaller than the diameter of the through hole to be finally processed.

[0072] And, the processing area in which residual thermal stress is formed inside the workpiece (11) is formed so that cracks do not occur or cracks are minimized around the through hole (12) of the workpiece (11) and the reaction speed during etching processing can be increased.

[0073] In this way, the process of forming through holes (12) and the processing area by irradiating a laser beam onto a workpiece (11) is repeated while moving the irradiation position of the laser beam so as to correspond to the number of through holes (12) to be processed.

[0074] So, in step S16, the etching processing unit (50) supplies a reaction solution to the workpiece (11) in which the through hole (12) is formed, as shown in FIG. 4, and etches and removes the processing area in which residual thermal stress is formed at high speed to finally process the through hole (12) of the desired shape and size (S18).

[0075] For example, the etching processing unit (50) is provided as a chemical reactor filled with a reaction solution, i.e., an etching solution, and the workpiece (11) can be deposited in the etching solution filled inside the chemical reactor.

[0076] Of course, the present invention is not necessarily limited to this, and the etching solution can be applied to the workpiece (11) in various ways, such as by spraying the etching solution onto the workpiece (11).

[0077] And the ultrasonic vibrator (51) provided in the above chemical reactor may be driven according to a control signal from the control unit (70) to apply ultrasonic vibration to the workpiece (11) at a preset period.

[0078] Additionally, the heater (52) is driven according to a control signal from the control unit (70) to heat the workpiece (11) and the etching solution, thereby controlling the etching processing speed and the diameter of the middle part of the through hole (12).

[0079] In addition, the bubble generator (53) can control the etching speed and performance by forming gas bubbles inside the etching solution.

[0080] Additionally, the filter (54) can remove by-products contained in the etching solution circulating inside the chemical reactor, thereby preventing by-products from adsorbing on the workpiece (11) and the through hole (12) or the etching solution from being applied locally unevenly, so that the through hole (12) can be created uniformly.

[0081] Accordingly, the through hole (12) can be formed without cracks by removing the crack formed around the through hole (12) by etching.

[0082] Through this process, a through hole (12) is machined at high speed in the workpiece (11) without cracks or damage.

[0083] According to the experimental results of machining a through hole in an actual workpiece, it can be confirmed that the through hole (12) is formed to have a uniform diameter and shape from the upper surface to the lower surface of the workpiece (11), as shown in FIGS. 5 and 6.

[0084] That is, according to the experimental results, the present invention can be applied not only to a general glass substrate but also to a high-strength processing object (11) such as tempered glass, and can process through holes (12) with the same diameter having a deviation of about ±3㎛ or less.

[0085] In addition, the present invention can process more than 100 through holes (12) per second at high speed, and it was confirmed that the yield of through holes (12) formed in the workpiece (11) is 99.99% or higher.

[0086] Of course, the present invention is not necessarily limited thereto, and as shown in FIGS. 7 and 8, the diameter of the middle part may be formed smaller than that of the upper and lower parts of the through hole.

[0087] Figures 7 (a) and (b) illustrate a through hole formed with a thickness of 410 μm, an upper diameter of 105 μm, a middle diameter of 55 μm, and a lower diameter of 105 μm.

[0088] Here, the repetition rate of the laser beam is 100 kHz, the laser power is 60%, the laser beam is formed into a thin, long needle shape using FINE Optics, and through holes are processed at a laser scan speed of 2000 per second, with a through hole spacing of 200 µm.

[0089] FIG. 8 illustrates a cross-section of a through hole formed with a thickness of 440 μm, an upper diameter of 60 μm, a middle diameter of 30 μm, and a lower diameter of 60 μm, and FIG. 9 (a) and (b) illustrate the upper and lower surfaces of the through hole, respectively.

[0090] Here, the repetition rate of the laser beam is 100 kHz, the laser intensity is 40%, the laser beam is formed into a thin, long needle shape using FINE Optics, through holes are processed at a laser scan speed of 2000 per second, and the through hole spacing is 200 μm.

[0091] In particular, the upper and lower surfaces of the through hole are formed in a circular shape with a constant diameter, and the difference in diameter between the upper and lower surfaces is within approximately ± 2㎛, and it can be confirmed that the positional accuracy is also within approximately ± 2㎛.

[0092] Accordingly, in this embodiment, it was confirmed that the positional accuracy of the through hole of the currently used hole processing device is ± 3㎛ and the difference in hole diameter is ± 3㎛ or more.

[0093] Through the process described above, the present invention can finely process through holes into a desired shape without cracking or damage to the workpiece by irradiating a laser beam onto a workpiece in an amorphous state or amorphous material to form fine through holes, and etching through a chemical reaction using a reaction solution.

[0094] In addition, the present invention can machine a through hole with a desired diameter and a circular shape on the surface and / or inside of a workpiece while suppressing the occurrence of cracks or damage to the workpiece.

[0095] Accordingly, the present invention can be applied to various products such as semiconductors and display panels by processing through holes with fine shapes in amorphous or non-crystalline workpieces such as glass substrates, silicon, and ceramics.

[0096] Although the invention made by the inventors has been specifically described according to the above embodiments, the present invention is not limited to the above embodiments and can be modified in various ways without departing from the gist thereof.

[0097] That is, although the above embodiments described a case where the shape of the through hole is circular, the present invention is not necessarily limited thereto, and the size and shape of the laser beam can be varied to various shapes required for processing, such as polygonal shapes including not only circular shapes but also elliptical shapes and square shapes. Industrial applicability

[0098] The present invention is applied to a glass substrate processing apparatus and method technology that processes through holes in a desired shape without cracking or damage to the workpiece by irradiating a workpiece with a laser beam and etching it. Explanation of the symbols

[0099] 10: Laser-based micro-processing device 11: Workpiece 12: Through hole 20: Laser beam irradiation unit 30: Optical section 40: Laser beam adjustment unit 50: Etching process part 51: Ultrasonic transducer 52: Heater 53: Bubble generator 54: Filter 60: Transfer section 70: Control unit

Claims

Claim 1 A laser beam irradiation unit that irradiates a laser beam onto a workpiece through which the laser beam passes; an optical unit that forms residual thermal stress inside the workpiece to increase the reaction speed during etching by locally irradiating the surface and interior of the workpiece by adjusting the size and shape of the laser beam to the size and shape required for processing; a laser beam adjustment unit that adjusts the energy intensity and beam mode of the laser beam; an etching processing unit that processes a through hole by etching and removing a processing area in the workpiece where residual thermal stress has occurred due to the laser beam; a transfer unit that moves the laser beam according to processing conditions including the shape, specifications, and location information of the through hole to be processed on the workpiece; and a control unit that controls the operation of each device, wherein the control unit controls the operation of the optical unit and the laser beam adjustment unit to adjust the shape, size, irradiation period, pulse width, energy intensity, and beam mode of the laser beam according to the processing conditions of the through hole, and the etching processing unit includes a chemical reactor that processes the through hole by applying an etching solution to the workpiece through a chemical reaction, wherein the chemical reactor is driven and processed according to the control of the control unit. A glass substrate processing apparatus comprising one or more of the following: an ultrasonic vibrator that applies ultrasonic vibration to a target object; a heater that heats the target object and the etching solution to control the etching processing speed and the diameter of the middle portion of the through hole; a bubble generator that generates gas bubbles inside the etching solution; and a filter that removes by-products contained in the etching solution circulating inside the chemical reactor to prevent by-products from adsorbing on the target object and the through hole or the etching solution from being applied locally unevenly, thereby creating the through hole uniformly; wherein the through hole is formed without cracks by removing cracks formed around the through hole by etching. Claim 2 delete Claim 3 delete Claim 4 A processing method for a glass substrate processing apparatus described in claim 1 comprises: (a) a step of irradiating a laser beam onto a workpiece through which the laser beam passes in a laser beam irradiation unit; (b) a step of locally irradiating the surface and interior of the workpiece by adjusting the size and shape of the laser beam in an optical unit to a size and shape required for processing, thereby forming residual thermal stress inside the workpiece to increase the reaction speed during etching; (c) a step of adjusting the energy intensity and beam mode of the laser beam in a laser beam adjustment unit; and (d) a step of processing a through hole by etching and removing the processing area where residual thermal stress has occurred in the workpiece irradiated by the laser beam in an etching processing unit. In the process of performing steps (a) through (c), the control unit controls the driving of a transfer unit to move the laser beam according to processing conditions including shape, specifications, and location information of the through hole to be processed in the workpiece, and controls the driving of the optical unit and the laser beam adjustment unit to adjust the shape and size, irradiation period, pulse width, energy intensity, and beam mode of the laser beam according to the processing conditions of the through hole. The above step (d) comprises one or more of the following: (d1) a step of applying ultrasonic vibration to a workpiece by driving an ultrasonic vibrator according to the control of the control unit in a chemical reactor in which an etching solution is applied to a workpiece to process the through hole by a chemical reaction; (d2) a step of controlling the etching processing speed and the diameter of the middle part of the through hole by driving a heater to heat the workpiece and the etching solution; (d3) a step of forming gas bubbles inside the etching solution by driving a bubble generator; and (d4) a step of removing by-products contained in the etching solution circulating inside the chemical reactor using a filter to eliminate the phenomenon of by-products being adsorbed on the workpiece and the through hole or the etching solution being applied locally unevenly, thereby creating the through hole uniformly.A method for processing a glass substrate, characterized in that the through hole is formed without cracks by removing cracks formed around the through hole by etching. Claim 5 delete Claim 6 delete

Images